Actively cooled foreline trap to reduce throttle valve drift

Abstract

An exemplary semiconductor processing system includes a processing chamber defining a processing region. The semiconductor processing system can include a foreline coupled to the processing chamber. The foreline can define a fluid conduit. The semiconductor processing system can include a foreline trap coupled to a distal end of the foreline. The semiconductor processing system can include a removable insert disposed within an interior of the foreline trap. The semiconductor processing system can include a throttle valve coupled to the foreline trap downstream of the removable insert.

Description

[Technical Field]

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of and priority to U.S. patent application Ser. No. 17 / 108,583, entitled "ACTIVELY COOLED FORELINE TRAP TO REDUCE THROTTLE VALVE DRIFT," filed Dec. 1, 2020, the entire contents of which are incorporated by reference herein.

[0002] Technical Field

[0002] The present technology relates to components and equipment for semiconductor manufacturing. More particularly, the present technology relates to processing chamber components and other semiconductor processing equipment. [Background technology]

[0003] background

[0003] Integrated circuits are made possible by processes that produce intricately patterned layers of material on substrate surfaces. Fabricating patterned materials on substrates requires controlled methods for forming and removing material. Precursors are often supplied to a processing region and distributed to uniformly deposit or etch material on the substrate. Many aspects of a processing chamber can affect the uniformity of the process, such as the uniformity of process conditions within the chamber, the uniformity of flow through components, and other process and component parameters. Even small inconsistencies across the substrate can affect the formation or removal process.

[0004]

[0004] Therefore, there is a need for improved systems and methods that can be used to fabricate high quality devices and structures. These and other needs are met by current technology. Summary of the Invention

[0005] An exemplary semiconductor processing system includes a processing chamber defining a processing region. The semiconductor processing system can include a foreline coupled to the processing chamber. The foreline can define a fluid conduit. The semiconductor processing system can include a foreline trap coupled to a distal end of the foreline. The semiconductor processing system can include a removable insert disposed within an interior of the foreline trap. The semiconductor processing system can include a throttle valve coupled to the foreline trap downstream of the removable insert.

[0006] In some embodiments, the semiconductor processing system may include a cooling fluid source. The semiconductor processing system may include a fluid line connecting the cooling fluid source to the removable insert. The removable insert may be characterized by one or more sidewalls defining an open interior. At least one of the one or more sidewalls may define a plurality of apertures extending through a thickness of the at least one sidewall. Each of the plurality of apertures may have a diameter between approximately 3 mm and 25 mm. Each of the plurality of apertures may have a circular shape. Each of the plurality of apertures may have the same diameter. The removable insert may include a solid base connected to the one or more sidewalls. Each of the one or more sidewalls may have a thickness of approximately 0.5 inches or less. The semiconductor processing system may include an additional foreline connected to the processing chamber. The foreline trap may include a first inlet fluidly connected to the foreline. The foreline trap may include a second inlet fluidly connected to the additional foreline. The foreline trap can include an outlet fluidly connected to the throttle valve. The removable insert can be positioned downstream of the first inlet and the second inlet and upstream of the outlet. The semiconductor processing system can include a collar that removably couples the removable insert to the foreline trap.

[0007] Some embodiments of the present technology may include a semiconductor processing system. The system may include a processing chamber defining a processing region. The system may be a foreline coupled to the processing chamber. The foreline may define a fluid conduit. The system may include a removable insert disposed within the interior of the fluid conduit. The system may include a cooling fluid source. The system may include a fluid line coupling the cooling fluid source to the removable insert. The system may include a throttle valve coupled to the foreline downstream of the removable insert.

[0008] In some embodiments, the foreline may include a foreline trap coupled to the throttle valve. A removable insert may be disposed within the foreline trap. The foreline trap may include a first flange. The removable insert may include a second flange. The system may include a removable collar securing the first flange and the second flange together. The removable insert may include an insert body having a cross-shaped cross-section. The removable insert may include a solid base coupled to one or more sidewalls defining an open interior. The system may include a cooling block coupling the fluid line and the solid base. The cooling block may be removably coupled to the solid base. At least one sidewall of the one or more sidewalls may define a plurality of apertures extending through a thickness of the at least one sidewall.

[0009] Some embodiments of the present technology may include a method of semiconductor processing. The method may include flowing a precursor into a processing chamber. The method may include generating a plasma of the precursor in a processing region of the processing chamber. The method may include depositing a material on a substrate disposed in the processing region. The method may include evacuating the precursor from the processing chamber through at least one foreline, a foreline trap, and a throttle valve. A removable insert may be disposed in the foreline trap.

[0010] In some embodiments, the method can include actively cooling the removable insert as the precursor is vented. Actively cooling the removable insert can include circulating a cooling fluid through a cooling block coupled to the removable insert.

[0011] Such technology may offer many advantages over conventional systems and techniques. For example, embodiments of the technology may utilize an actively cooled insert in a foreline trap to collect residue from the process gas before the gas reaches the throttle valve. Furthermore, the components may be scalable to accommodate any number of chambers or processes. These and other embodiments, along with many of their advantages and features, are described in more detail in conjunction with the following description and accompanying figures.

[0012] A further understanding of the nature and advantages of the disclosed technology may be realized by reference to the remaining portions of the specification and the drawings. [Brief explanation of the drawings]

[0013] [Figure 1] 1 illustrates a top view of an exemplary processing system in accordance with some embodiments of the present technique. [Figure 2]

[0014] 1 shows a schematic cross-sectional view of an exemplary plasma system in accordance with some embodiments of the present technique; [Figure 3]

[0015] 1 shows a schematic cross-sectional view of an exemplary processing chamber in accordance with some embodiments of the present technique; [Figure 3A]

[0016] 1 shows a schematic cross-sectional view of a chamber exhaust component in accordance with some embodiments of the present technique; [Figure 4]

[0017] FIG. 1 shows a schematic isometric view of an exemplary removable foreline trap insert in accordance with some embodiments of the present technology. [Figure 5]

[0018] FIG. 1 shows a schematic isometric view of an exemplary removable foreline trap insert in accordance with some embodiments of the present technology. [Figure 6]

[0019] 1 illustrates operations of an exemplary semiconductor processing method in accordance with some embodiments of the present technique. DETAILED DESCRIPTION OF THE INVENTION

[0014]

[0020] Some figures are included as schematic diagrams. It should be understood that the drawings are for illustrative purposes and should not be considered to scale unless specifically indicated to scale. Furthermore, as schematic diagrams, the figures are provided to aid in understanding and may not include all aspects or information compared to realistic representations and may include exaggerated material for illustrative purposes.

[0015]

[0021] In the accompanying figures, similar components and / or features may have the same reference label. Furthermore, various components of the same type may be distinguished by following the reference label with a letter that distinguishes between the similar components. When only a first reference number is used herein, the description is applicable to any one of the similar components having the same first reference number, regardless of the letter.

[0016]

[0022] Plasma-enhanced deposition processes can energize one or more constituent precursors to facilitate film formation on a substrate. Any number of material films can be produced to develop semiconductor structures, including conductive and dielectric films, as well as films that facilitate material transport and removal. For example, hard mask films can be formed to facilitate substrate patterning while protecting and preserving underlying materials. In many processing chambers, several precursors can be mixed in a gas panel and delivered to the processing region of the chamber where the substrate may be placed. While lid stack components can affect flow distribution to the processing chamber, many other processing variables can similarly affect deposition uniformity.

[0017]

[0023] Precursors and / or other process gases are often exhausted from the chamber through multiple forelines. The pressure and fluid conductance of the vented gases are controlled by one or more throttle valves connected to the forelines. As the precursors pass through the forelines and throttle valves, radicals from the precursors impinge on the interior of the forelines and throttle valves, depositing residues on the forelines and throttle valves. When these residues accumulate within the throttle valves, they reduce the cross-sectional area of ​​the throttle valve's flow path, effectively changing the conductance of the flow through the throttle valve and causing throttle valve drift. For example, as residues accumulate over time, the cross-sectional area of ​​the flow path decreases, requiring the throttle valve to open more widely (drift) to maintain the desired conductance. This throttle drift changes the cross-sectional area of ​​the flow path associated with each angle of the throttle valve. Over time, the throttle valve must open to a greater angle to account for the reduced conductance and pressure changes of the gas flowing through the throttle valve. As the angle increases, it becomes more difficult to control the throttle valve to provide the correct conductance and hydraulic pressure.

[0018]

[0024] Conventionally, countering the effects of throttle valve drift has required rinsing the foreline and throttle valve with a hot purge gas, such as NF3, which removes residue and cleans the throttle valve surface. However, these hot purge gases can be harmful to chamber components. Therefore, conventional systems must carefully balance the desire to reverse or reduce throttle valve drift with the desire to minimize exposure of chamber components to such hot purge gases.

[0019]

[0025] The present technology overcomes these challenges by utilizing a foreline trap that receives a removable insert that collects residue upstream of the throttle valve. The insert can be removed from the foreline trap for cleaning or replacement, without the need to clean or replace the foreline or throttle valve. In embodiments, the insert may be actively cooled, further enhancing the insert's ability to collect residue from the precursor. The present technology can therefore reduce the occurrence of throttle valve drift and reduce (or eliminate) the need to purge a hot throttle valve.

[0020]

[0026] While the remainder of the disclosure routinely identifies particular deposition processes utilizing the disclosed technology, it will be readily understood that the systems and methods are equally applicable to other deposition and cleaning chambers and processes that may occur in the described chambers. Thus, the technology should not be considered limited to use with only these particular deposition processes or chambers. This disclosure discusses one possible system and chamber that may include lid stack components according to embodiments of the present technology, before describing additional modifications and adjustments to this system according to embodiments of the present technology.

[0021]

[0027] 1 illustrates a top view of one embodiment of a deposition, etch, bake, and cure chamber processing system 100, according to an embodiment. In the figure, a pair of front-opening integrated pods 102 deliver substrates of various sizes that are received by a robotic arm 104, placed in one of the substrate processing chambers 108a-f, and placed in a low-pressure holding area 106 before being positioned in tandem sections 109a-c. A second robotic arm 110 can be used to transfer substrate wafers from the holding area 106 to and from the substrate processing chambers 108a-f. Each substrate processing chamber 108a-f can be equipped to perform multiple substrate processing operations, including plasma-enhanced chemical vapor deposition, atomic layer deposition, physical vapor deposition, etching, pre-cleaning, degassing, alignment, and other substrate processes, including annealing, ashing, and the like.

[0022]

[0028] The substrate processing chambers 108a-f can include one or more system components for depositing, annealing, curing, and / or etching a dielectric or other film on a substrate. In one configuration, two pairs of processing chambers, e.g., 108c-d and 108e-f, can be used to deposit a dielectric material on a substrate, and a third pair of processing chambers, e.g., 108a-b, can be used to etch the deposited dielectric. In another configuration, all three pairs of chambers, e.g., 108a-f, can be configured to deposit a stack of alternating dielectric films on a substrate. Any one or more of the described processes can be performed in chambers separate from the fabrication system shown in different embodiments. It will be understood that additional configurations of dielectric film deposition, etching, annealing, and curing chambers are contemplated by system 100.

[0023]

[0029] 2 shows a schematic cross-sectional view of an exemplary plasma system 200 in accordance with some embodiments of the present technique. The plasma system 200 may be adapted to one or more of the tandem sections 109 described above and may include a pair of processing chambers 108 that may include faceplates or other components or assemblies in accordance with embodiments of the present technique. The plasma system 200 may generally include a chamber body 202 having a sidewall 212, a bottom wall 216, and an interior sidewall 201 that defines a pair of processing regions 220A and 220B. Each of the processing regions 220A-220B may be similarly configured and include identical components.

[0024]

[0030] For example, processing region 220B, whose components may be included in processing region 220A, may include a pedestal 228 disposed in the processing region through a passageway 222 formed in the bottom wall 216 of plasma system 200. Pedestal 228 may provide a heater adapted to support a substrate 229 on an exposed surface of the pedestal, such as a body portion. Pedestal 228 may include a heating element 232, such as a resistive heating element, capable of heating and controlling the substrate temperature at a desired processing temperature. Pedestal 228 may also be heated by a remote heating element, such as a lamp assembly, or any other heating device.

[0025]

[0031] The body of the pedestal 228 can be coupled to the stem 226 by a flange 233. The stem 226 can electrically couple the pedestal 228 to a power outlet or power box 203. The power box 203 can include a drive system that controls the elevation and movement of the pedestal 228 within the processing region 220B. The stem 226 can also include a power interface for supplying power to the pedestal 228. The power box 203 can also include an interface for power and temperature indicators, such as a thermocouple interface. The stem 226 can include a base assembly 238 adapted to removably couple with the power box 203. A circumferential ring 235 is shown on the power box 203. In some embodiments, the circumferential ring 235 can be a shoulder adapted as a mechanical stop or land configured to provide a mechanical interface between the base assembly 238 and the top surface of the power box 203.

[0026]

[0032] The rod 230 may be contained through a passage 224 formed in the bottom wall 216 of the processing region 220B and may also be utilized to position substrate lift pins 261 disposed through the body of the pedestal 228. The substrate lift pins 261 may selectively space the substrate 229 from the pedestal to facilitate exchange of the substrate 229 with a robot utilized to transfer the substrate 229 through the substrate transfer port 260 into the processing region 220B.

[0027]

[0033] A chamber lid 204 may be coupled to the top of the chamber body 202. The lid 204 may house one or more precursor delivery systems 208 coupled thereto. The precursor delivery system 208 may include a precursor inlet passage 240 that may deliver reactant and cleaning precursors through a gas supply assembly 218 into the processing region 220B. The gas supply assembly 218 may include a gas box 248 having a blocker plate 244 disposed intermediate a faceplate 246. A radio frequency (“RF”) source 265 may be coupled to the gas supply assembly 218, which may provide power to the gas supply assembly 218 to facilitate generation of a plasma region between the faceplate 246 of the gas supply assembly 218 and the pedestal 228, which may be the processing region of the chamber. In some embodiments, the RF source may be coupled to other portions of the chamber body 202, such as the pedestal 228, to facilitate generation of the plasma. A dielectric isolator 258 can be disposed between the lid 204 and the gas supply assembly 218 to prevent conduction of RF power to the lid 204. A shadow ring 206 can be disposed around the pedestal 228 to engage the pedestal 228.

[0028]

[0034] Optional cooling channels 247 can be formed in the gas box 248 of the gas distribution system 208 to cool the gas box 248 during operation. A heat transfer fluid, such as water, ethylene glycol, or gas, can be circulated through the cooling channels 247 to maintain the gas box 248 at a predetermined temperature. A liner assembly 227 can be positioned within the processing region 220B proximate the sidewalls 201, 212 of the chamber body 202 to prevent exposure of the sidewalls 201, 212 to the processing environment within the processing region 220B. The liner assembly 227 can include a circumferential pumping cavity 225 that can be coupled to a pumping system 264 configured to evacuate gases and byproducts from the processing region 220B and control the pressure within the processing region 220B. A plurality of exhaust ports 231 can be formed on the liner assembly 227. The exhaust ports 231 can be configured to allow gas flow from the processing region 220B to the circumferential pumping cavity 225 in a manner that facilitates processing within the system 200.

[0029]

[0035] FIG. 3 illustrates a schematic, partial cross-sectional view of an exemplary processing system 300 in accordance with some embodiments of the present technique. FIG. 3 may provide additional details regarding components within system 200. System 300 is understood to include any feature or aspect of system 200 described above in some embodiments. System 300 can be used to perform semiconductor processing operations, including deposition of hard mask materials as described above, as well as other deposition, removal, and cleaning operations. System 300 may illustrate a partial view of a chamber component that may be incorporated into the discussed semiconductor processing system, and may illustrate a view across the center of a faceplate, which may otherwise be of any size and include any number of apertures. As will be readily understood by those skilled in the art, any aspect of system 300 may also be incorporated into other processing chambers or systems.

[0030]

[0036] The system 300 can include a processing chamber including a faceplate 305 through which precursors can be delivered for processing and which can be coupled to a power source for generating a plasma within a processing region of the chamber. The chamber can also include a chamber body 310, which may include sidewalls and a base, as shown. A pedestal or substrate support 315 can extend through the base of the chamber, as previously described. The substrate support 315 can include a support plate 320 capable of supporting a semiconductor substrate. The support plate 320 can be coupled to a shaft 325 that extends through the base of the chamber.

[0031]

[0037] The faceplate 305 may be supported directly or indirectly by the chamber body 310. By way of example only, the faceplate 305 may be supported on a pumping liner 330 and / or an isolator or other liner 335. For example, the pumping liner 330 may rest on a shelf formed by the top of the chamber body 310, with an additional liner 335 and / or faceplate 305 resting on top of the pumping liner 330. The pumping liner 330 may define one or more exhaust ports 340 that allow gas flow from the processing region to one or more forelines 350 coupled to the processing chamber. For example, each exhaust port 340 may be fluidly coupled to the top end of one or more exhaust lumens 345 formed in the sidewalls and / or base of the chamber body 310. The bottoms of the exhaust lumens 345 may be coupled to each of the forelines 350. Each foreline 350 may define a fluid conduit for flowing process gas from a processing chamber and directing the process gas through a throttle valve 355, thereby controlling fluid conductance through the foreline 350. The forelines 350 may be coupled to a foreline trap 360, which may be coupled between a distal end of each foreline 350 and a proximal end of the throttle valve 355. The foreline trap 360 may include an inlet 365 coupled to each of the forelines 350. For example, in the illustrated embodiment, the foreline trap 360 includes two inlets 365, one coupled to each of the two forelines 350. The foreline trap 355 also includes an outlet 370 fluidly coupled to the throttle valve. Foreline trap 360 may also include a trap section 375 disposed between inlet 365 and outlet 370, with inlet 365 upstream of trap section 375 and outlet 370 downstream of trap section 375. By way of example only, inlets 365 may be coaxial with one another, with trap section 375 coupled to inlet 365 at a generally perpendicular angle such that a T-junction is formed. Outlet 370 may branch off from trap section 375 at an angle, such as a generally perpendicular angle.

[0032]

[0038] As best shown in FIG. 3A , a removable insert 380 can be provided within the interior of the foreline trap 360. For example, the insert 380 can be positioned within the trap section 375. The insert 380 can serve as a collection point for residue and / or other deposits caused by radicals from the process gas flowing through the foreline 350 before the gas reaches the throttle valve 355. For example, the insert 380 can provide a large surface area on which residue may accumulate before the process gas reaches the throttle valve 355. The insert 380 can be any size and / or shape that fits within the foreline trap 375 while facilitating gas flow to the throttle valve 355. For example, as shown, the insert 380 is a tubular element having one or more sidewalls defining an open interior. The tubular element can have any cross-sectional shape, including circular, oval, rectangular, triangular, etc. One or more sidewalls of the tubular element can define a number of apertures 384 extending through the thickness of the respective sidewall. Apertures 384 can maintain sufficient fluid flow conductivity through foreline trap 360, insert 380, and throttle valve 355, allowing throttle valve 355 to regulate flow through foreline 350 with sufficient precision. The size, number, and / or placement of apertures 384 can be selected to be large enough to maintain adequate fluid conductance, while leaving insert 380 with sufficient surface area to serve as a collection point for residue from the process gas. For example, apertures 384 can have a diameter between about 3 mm and about 25 mm, between about 6 mm and 20 mm, between about 9 mm and 18 mm, between about 12 mm and 15 mm, between about 12 mm and 15 mm, or any other range of diameters that provides sufficient conductance while providing sufficient surface area to function as a residue trap.

[0033]

[0039] Although shown as having circular apertures, it will be understood that other aperture shapes are possible, such as rectangular, triangular, star-shaped, oval, and / or other closed shapes. In some embodiments, the cross-sectional area of ​​each aperture 384 is approximately 500 mm 2 Below, approximately 450mm 2 Below, approximately 400mm 2 Below, approximately 350mm 2 Below, approximately 300mm 2 Below, approximately 250mm 2 Below, approximately 200mm 2 Below, approximately 150mm 2 Below, approximately 100mm 2 Below, about 50mm 2 Below, approximately 25mm 2 The apertures 384 may be equal to, less than, or less than 1 / 2" x ... For example, one or more surfaces of the insert 380 farthest from the outlet 376 may be devoid of apertures 384, providing a larger surface area for residue to be trapped on, while the surface closest to the outlet 376 may include apertures that help maintain sufficient conductance through the foreline 350, foreline trap 360, and throttle valve 355.

[0034]

[0040] In some embodiments, the insert 380 can include a generally solid base 386. For example, as shown, the solid base 386 is disposed below the sidewall. The base 386 can be entirely solid and / or can provide a solid foundation for securing the insert 380 within the foreline trap 360. For example, the base 386 and / or the foreline trap 360 can include one or more attachment mechanisms that allow the insert 380 to be removably secured in place within the foreline trap 360. By way of example only, the trap section 375 can include a flange 377, such as at a lower end of the trap section 375. In some embodiments, the insert 380 can include a flange 382, ​​such as a KF flange, that can be formed as part of and / or coupled to the insert 380. As shown, the flange 382 is a separate component that can be removably secured to the base 386 of the insert 380. For example, the flange 382 may include a threaded connector or other fastening element that can engage a corresponding connector on the base 386 of the insert 380 to connect the flange 382 to the base 386. This allows the insert 380 to be separated from the flange 382 for cleaning, repair, or replacement, while still allowing the flange 382 to be reused. The two flanges 377, 382 may be coupled to each other to secure the insert 380 within the trap portion 375. For example, a collar 395 may be provided to receive and secure the flanges 377, 382 to each other to secure the insert 380 within the trap portion 375. In some embodiments, an O-ring, gasket, or other sealing element 397 may be provided within the collar 395 to help seal the interface between the flange 377 of the foreline trap 360 and the flange 382 of the insert 380. The sealing element 397 helps prevent process gases from leaking through the collar 395. The collar 395 may be a clamping collar that allows the collar 395 to be released from the flanges 377, 382, ​​allowing the insert 380 to be easily accessed and removed from the trap for cleaning or replacement.For example, the collar 395 may include a fastening mechanism, such as a threaded fastening mechanism and / or a quick disconnect mechanism.

[0035]

[0041] In some embodiments, the insert 380 can be actively cooled to further enhance the insert 380's ability to collect residue from the process gas. For example, the insert 380 can be coupled to a cooling block 385, which is coupled to a cooling source. In some embodiments, the base of the insert 380 and / or the bottom of the flange 382 can include a protrusion 394 that protrudes beyond a collar 395 and couples to the cooling block 385. The protrusion 394 can be removably coupled to the cooling block 385, such as using a fastener or other coupling mechanism. The cooling block 385 can be coupled to a cooling fluid source 390, such as a process chilled water source, which can provide circulating fluid to the cooling block 385 via one or more fluid lines 392. In this manner, the cooling block 385 can establish a heat transfer path that can reduce the temperature of the insert 380 relative to the foreline trap 360 and the gas flowing therethrough. For example, process gases flowing through the foreline 350, foreline trap 360, and / or throttle valve 355 can often exceed 140° C. or higher. The cooling fluid can be water, ethylene glycol, and / or other coolants and can be provided at temperatures of about 100° C. or less, about 90° C. or less, about 80° C. or less, about 70° C. or less, about 60° C. or less, about 60° C. or less, about 50° C. or less, about 40° C. or less, about 30° C. or less, about 25° C. or less, about 20° C. or less, about 15° C. or less, about 10° C. or less, about 5° C. or less, about 0° C. or less, or below. Such coolant temperatures can result in temperatures of the insert 380 of about 80° C. or less, about 70° C. or less, about 60° C. or less, about 50° C. or less, about 40° C. or less, about 30° C. or less, about 25° C. or less, about 20° C. or less, about 15° C. or less, about 10° C. or less, about 5° C. or less, about 0° C. or less, or even lower. These temperatures are significantly lower than the temperatures of the process gas, foreline 350, foreline trap 360, and / or throttle valve 355, and thus help promote residue collection on the insert 380. The insert 380 can be formed from a thermally conductive material, such as aluminum, which allows the insert 380 to be more effectively cooled by the cooling block, further promoting residue deposition.It will be appreciated that the insert 380 may be cooled in a non-uniform manner. For example, a portion of the insert 380 closer to the base 386 may cool to a greater extent than an upper portion of the insert 380. Additionally, the size and distribution of the apertures 384 may affect the cooling characteristics of the insert 380.

[0036]

[0042] A cooler insert 380 temperature can cause residue from the process gases to accumulate on the insert 380 rather than on the warmer walls of the foreline trap 360 and / or within the throttle valve 355. Reducing residue buildup within the throttle valve 355 can reduce the amount of throttle valve drift. This can lead to improved performance of the throttle valve 355, making it easier to consistently control the conductance of fluid through the foreline 350 and throttle valve 355. Furthermore, reduced deposit residue within the throttle valve 355 can reduce the frequency of hot purge gas cleaning of the throttle valve 355, helping to protect chamber components such as the heater from the flow of such purge gas.

[0037]

[0043] The insert 380 may be designed to not only maintain sufficient fluid conductance but also promote better cooling, thereby enhancing the insert 380's ability to trap or collect residue from the process gas before the gas reaches the throttle valve 355. For example, if the thickness and / or cross-sectional area of ​​the sidewall and / or body of the insert 380 is too large, too much of the open interior of the foreline trap 360 will be filled, resulting in reduced conductance of the foreline trap 360 and throttle valve 355 and altering the pressure within the foreline trap 360 and throttle valve 355 from desired operating conditions. The sidewall thickness can be about 0.50 inches or less, about 0.40 inches or less, about 0.35 inches or less, about 0.35 inches or less, about 0.30 inches or less, about 0.25 inches or less, about 0.20 inches or less, about 0.15 inches or less, about 0.10 inches or less, about 0.05 inches or less, or less. In some embodiments, the thickness of the sidewall of the insert 380 may vary along the length of the insert 380. For example, the thickness of the sidewall can be thicker near the base 386 and decrease linearly or non-linearly in a direction away from the base 386. The cross-sectional area of ​​the insert 380 can be about 1.6 square inches or less, about 1.5 square inches or less, about 1.4 square inches or less, about 1.3 square inches or less, about 1.2 square inches or less, about 1.1 square inches or less, about 1.0 square inches or less, about 0.9 square inches or less, about 0.8 square inches or less, about 0.7 square inches or less, about 0.6 square inches or less, about 0.5 square inches or less, about 0.45 square inches or less, about 0.40 square inches or less, about 0.35 square inches or less, about 0.30 square inches or less, or about 0.25 square inches or less. In some embodiments, the cross-sectional area of ​​the insert 380 may vary along the length of the insert 380. For example, the cross-sectional area may be larger near the base 386 and may decrease linearly or non-linearly in the direction away from the base 386.

[0038]

[0044] FIG. 4 shows a schematic isometric view of an exemplary insert 400 in accordance with some embodiments of the present technology. The insert 400 can be included in any of the chambers or systems described above, as well as any other chambers or systems that may benefit from an insert. For example, the insert 400 can be disposed within the trap portion 375 of the foreline trap 360 described above in connection with FIGS. 3 and 3A. The insert 400 can be similar to the insert 380 and can include any of the features described with respect to the insert 380. For example, the insert 400 can include a solid base 405. The base 405 can include a coupling mechanism that allows the insert 400 to be coupled to a cooling block (such as cooling block 385) and / or a flange (such as flange 382), which can be used to secure the insert 400 within a foreline trap, such as the foreline trap 360. For example, the base 405 can define a threaded receptacle 410 that can receive a threaded male connector of a flange and / or cooling block. In some embodiments, rather than defining a threaded receptacle, the base 405 may include a male threaded connector that is mateable with a corresponding female connector on a flange and / or cooling block. It will be appreciated that in some embodiments, a non-threaded coupling mechanism may be used to secure the insert 400 to the flange and / or cooling block. In some embodiments, the base 405 may be formed to include a flange, with the base of the flange including the coupling mechanism for coupling the insert 400 to the cooling block. A circular sidewall 415 extends from the base 405 and defines an open interior 420. The sidewall 415 may further define a number of apertures 425. As shown, the apertures 425 are arranged in a number of rows and columns, with the apertures 425 in each row aligned with the apertures 425 in an adjacent row along the longitudinal axis of the insert 400. As discussed above, the size, arrangement, and / or number of apertures 425 can be selected to maintain adequate fluid conductance while leaving insert 400 with sufficient surface area to act as collection points for residue from the process gas.

[0039]

[0045] FIG. 5 shows a schematic isometric view of an exemplary insert 500 in accordance with some embodiments of the present technology. The insert 500 can be included in any of the chambers or systems described above, as well as any other chambers or systems that may benefit from an insert. For example, the insert 500 can be positioned within the trap portion 375 of the foreline trap 360 described above in connection with FIGS. 3 and 3A. The insert 500 can include a body 505 that serves as a collection point for residue from process gas passing through the foreline trap. As shown, the body 505 of the insert 500 has a cruciform cross-section that includes multiple vanes 510 that provide a large surface area for collecting residue. Each vane 510 can have a thickness selected to allow sufficient conductance through the foreline trap and throttle valve. For example, each wing 510 can have a thickness of about 0.50 inches or less, about 0.40 inches or less, about 0.30 inches or less, or about 0.30 inches or less, about 0.25 inches or less, about 0.20 inches or less, about 0.15 inches or less, about 0.10 inches or less, about 0.05 inches or less, or less. In some embodiments, the thickness of the wings 510 of the insert 500 can vary along the length of the insert 500. For example, the thickness of the wings 510 can be greater near the bottom of the insert 500 and decrease linearly or non-linearly toward the top of the insert 500. While shown with a cross-shaped cross-section, it will be understood that the insert can have other cross-sectional shapes.

[0040]

[0046] The insert 500 may also include a base or stem 515 that supports the insert 500 at a desired position within the foreline trap. For example, the stem 515 may be located atop and / or coupled to the base of the top and / or flange (such as flange 382) of the foreline trap. For example, the distal end of the stem 515 may be threaded for insertion into a threaded receptacle in the flange. The flange may be coupled to the foreline trap in a manner similar to that described in connection with FIGS. 3 and 3A. For example, the flange of the foreline trap and the flange of the insert 500 may be secured to one another via a collar and / or other securing mechanism. While illustrated as a single shaft, the base or stem 515 may have any shape. For example, the insert 500 may include a base that extends radially outward along all or part of the width of the wings 510. In some embodiments, the base of the insert 500 may have a structure similar to that of the base 405 described above in connection with FIG. 4.

[0041]

[0047] In some embodiments, the body 505 of the insert 500 can define multiple apertures. For example, some or all of the wings 510 can define one or more apertures that can increase the fluid conductance of the insert 500. In some embodiments, each of the apertures can extend through a single wing 510, while in other embodiments, one or more apertures can extend through portions of multiple wings 510.

[0042]

[0048] 6 illustrates operations of an exemplary method 600 of semiconductor processing in accordance with some embodiments of the present technique. The method can be performed in a variety of processing chambers, including processing systems 200 and / or 300 described above, which may include foreline traps and / or inserts in accordance with embodiments of the present technique, such as foreline trap 360 and / or inserts 380, 400, and / or 500. Method 600 can include numerous optional operations that may or may not be specifically associated with some embodiments of methods in accordance with the present technique.

[0043]

[0049] Method 600 may include a processing method that may include operations for forming a hard mask film or other deposition operations. The method may include optional operations or additional operations before the start of method 600. For example, method 600 may include operations performed in an order different from that shown. In some embodiments, method 600 may include flowing one or more precursors or other process gases into a processing chamber in operation 605. For example, precursors may be flowed into a chamber such as that included in system 200 or 300, and the precursors may flow through one or more of a gas box, a blocker plate, or a face plate before delivering the precursors to a processing region of the chamber.

[0044]

[0050] In operation 610, a plasma can be generated from the precursors in the processing region, such as by applying RF power to a faceplate to generate the plasma. Material formed in the plasma can be deposited on a substrate in operation 615. In operation 620, the precursors can be evacuated from the processing chamber. For example, the precursors can be flowed through at least one foreline, a foreline trap, and a throttle valve to remove the precursors from the processing chamber. The foreline trap can include an insert, such as insert 380, 400, or 500, that serves as a collection point for residue from the precursors and other process gases, which can prevent or reduce residue buildup in the throttle valve. This helps maintain proper conductance through the throttle valve and reduce the amount of throttle valve drift, thereby reducing the frequency of cleaning operations.

[0045]

[0051] In some embodiments, to further facilitate residue collection on the insert, the insert can be actively cooled as the precursor or other process gas is vented. For example, a cooling fluid, such as water or ethylene glycol, can be circulated or otherwise flowed through a cooling block coupled to the insert. The cooling fluid reduces the temperature of the insert and facilitates residue collection.

[0046]

[0052] The insert can be removed from the foreline trap for cleaning, maintenance, or other purposes. For example, when a threshold amount of residue has collected on the insert, the insert can be removed and cleaned and / or replaced with a clean insert that can better collect residue than a dirty insert. In some embodiments, to remove the insert, a collar that connects the foreline trap flange and the insert together can be removed. Similarly, the insert and / or the insert flange can be detached from the cooling block to free the insert. A new and / or clean insert can be coupled to the cooling block and reinserted into the foreline trap. In this manner, the insert can be cleaned and / or replaced without having to clean the foreline and / or throttle valve using hot purge gas, which can damage chamber components.

[0047]

[0053] Although the foregoing description, for purposes of explanation, sets forth numerous details in order to provide an understanding of various embodiments of the present technology, it will be apparent to one skilled in the art that particular embodiments may be practiced without some of these details or with additional details.

[0048]

[0054] While several embodiments have been disclosed, those skilled in the art will recognize that various modifications, alternative constructions, and equivalents may be used without departing from the spirit of the embodiments. Moreover, in order to avoid unnecessarily obscuring the technology of the present invention, many well-known processes and elements have not been described. Therefore, the above description should not be construed as limiting the scope of the technology.

[0049]

[0055] Where a range of values ​​is provided, unless the context clearly dictates otherwise, it is understood that each intervening value between the upper and lower limits of that range is also specifically disclosed, to the smallest fraction of the unit of the lower limit. Any smaller ranges between a stated value or an unstated intervening value in a stated range and any other stated or intervening value in the stated range are encompassed. The upper and lower limits of these smaller ranges may be independently included or excluded, and each range in which either, neither, or both limits are included in the smaller range is also encompassed within the technology, subject to the specifically excluded limit in the stated range. When one or both limits are included in a stated range, ranges excluding either or both of the included limits are also included.

[0050]

[0056] As used in this specification and the appended claims, the singular forms "a," "an," and "the" include plural references unless the context clearly dictates otherwise. Thus, for example, a reference to an "aperture" includes a plurality of such apertures; a reference to a "plate" includes a reference to one or more plates and equivalents thereof known to those skilled in the art; and so forth.

[0051]

[0057] Additionally, the terms "comprise(s)", "comprising", "contain(s)", "containing", "include(s)", and "including", when used in this specification and claims, are intended to specify the presence of stated features, integers, components, or steps, but do not exclude the presence or addition of one or more other features, integers, components, steps, operations, or groups.

Claims

1. a processing chamber defining a processing region; a foreline defining a fluid conduit coupled to the processing chamber; a foreline trap coupled to a distal end of the foreline; a removable insert disposed within an interior of the foreline trap, the removable insert including a solid base, a distal end of the solid base being removably coupled to a flange; a throttle valve connected to the foreline trap downstream of the removable insert; a cooling block removably coupled to the flange; a cooling fluid source; a fluid line connecting the cooling fluid source to the flange of the removable insert; 1. A semiconductor processing system comprising:

2. the removable insert is characterized by one or more side walls defining an open interior; At least one of the one or more sidewalls defines a plurality of apertures extending through a thickness of the at least one sidewall.

10. The semiconductor processing system of claim 1.

3. 3. The semiconductor processing system of claim 2, wherein each of said plurality of apertures has a diameter between 3 mm and 25 mm.

4. 3. The semiconductor processing system of claim 2, wherein each of said plurality of apertures is circular.

5. 3. The semiconductor processing system of claim 2, wherein each of said plurality of apertures has the same diameter.

6. A semiconductor processing system as described in claim 2, wherein the solid base is connected to the one or more side walls.

7. 3. The semiconductor processing system of claim 2, wherein each of said one or more sidewalls has a thickness of 0.5 inches or less.

8. an additional foreline coupled to the processing chamber, The foreline trap is a first inlet fluidly connected to the foreline; a second inlet fluidly connected to the additional foreline; and an outlet fluidly connected to the throttle valve; 10. The semiconductor processing system of claim 1, wherein said removable insert is disposed downstream of said first inlet and said second inlet and upstream of said outlet.

9. 10. The semiconductor processing system of claim 1, further comprising a collar removably coupling said removable insert to said foreline trap.

10. a processing chamber defining a processing region; a foreline defining a fluid conduit coupled to the processing chamber; a removable insert disposed within the interior of the fluid conduit, the removable insert including a solid base, a distal end of the solid base being removably coupled to a flange; a cooling block removably coupled to the flange; a cooling fluid source; a fluid line connecting the cooling fluid source to the flange of the removable insert; a throttle valve connected to the foreline downstream of the removable insert; 1. A semiconductor processing system comprising:

11. the foreline includes a foreline trap coupled to the throttle valve; The semiconductor processing system of claim 10 , wherein the removable insert is disposed within the foreline trap.

12. the foreline trap includes a first flange; the removable insert includes a second flange; 12. The semiconductor processing system of claim 11, wherein the semiconductor processing system further comprises a removable collar that secures the first flange and the second flange together.

13. The semiconductor processing system of claim 10 , wherein the removable insert comprises an insert body having a cross-shaped cross section.

14. The semiconductor processing system of claim 10, wherein the solid base is connected to one or more side walls that define an open interior.

15. 14. The semiconductor processing system of claim 13, wherein at least one sidewall of said one or more sidewalls defines a plurality of apertures extending through a thickness of said at least one sidewall.

16. flowing a precursor into a processing chamber; generating a plasma of the precursor in a processing region of the processing chamber; depositing a material onto a substrate disposed within the processing region; evacuating the precursor from the processing chamber through at least one foreline, a foreline trap, and a throttle valve, wherein a removable insert is disposed in the foreline trap, the removable insert including a solid base, a distal end of the solid base being removably coupled to a flange; actively cooling the removable insert as the precursor is ejected by circulating a cooling fluid through a cooling block, the cooling block being coupled to the flange of the removable insert; 1. A method for processing a semiconductor substrate, comprising:

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