Substrate holding device, lithography apparatus, substrate holding method, and article manufacturing method

Abstract

To provide a technique advantageous for holding a substrate having warpage.SOLUTION: A substrate-holding device for holding a substrate having warpage includes: a stage having a holding face for holding the substrate; a vibration-applying part for applying vibration to the substrate; and a control part for controlling processing to have the stage hold the substrate, where the holding face includes a first holding region for holding a first part of the substrate, and a second holing region for holding a second part different from the first part of the substrate, and the control part has the second holing region contact the second part to have the second holding region hold the second part by applying vibration to the second part of the substrate separating from the second holding region in a state of having the first region hold the first part of the substrate to resonate in the processing.SELECTED DRAWING: Figure 6

Description

[Technical Field]

[0001] The present invention relates to a substrate holding apparatus, a lithography apparatus, a substrate holding method, and a method for manufacturing an article. [Background technology]

[0002] In recent manufacturing processes for semiconductor devices, liquid crystal display devices, and the like, multiple layers are deposited on substrates such as semiconductor wafers and glass plates, and films that are highly stressful or relatively thick are sometimes formed on the substrate. In such cases, warping of the substrate can occur, making it difficult to properly hold the substrate on a substrate holding device (substrate stage) during processes such as forming a pattern on the substrate using an exposure device. Therefore, techniques for correcting substrate warpage have been proposed. For example, Patent Document 1 discloses a transfer device having a peripheral pressing member that corrects substrate warpage. Patent Document 2 also discloses a chuck device equipped with a sealing structure that seals the gap that forms between the back surface of a warped substrate and the top surface of the chuck. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Application Laid-Open No. 2001-284434 [Patent Document 2] Japanese Utility Model Application Publication No. 54-164982 Summary of the Invention [Problem to be solved by the invention]

[0004] In the devices described in Patent Documents 1 and 2, a member for correcting the warpage of the substrate is brought into contact with the surface of the substrate (the surface on which the pattern is formed) or the outer peripheral edge of the substrate, which can increase the risk of foreign matter adhering to the substrate or the substrate becoming contaminated. Therefore, a configuration and method is desired that can hold a substrate on a substrate stage in a way that reduces the warpage of the substrate without using a member that comes into contact with the surface or outer peripheral edge of the substrate.

[0005] Therefore, an object of the present invention is to provide an advantageous technique for holding a warped substrate. [Means for solving the problem]

[0006] In order to achieve the above object, one aspect of the present invention provides a substrate holding device for holding a warped substrate, the substrate holding device comprising: a stage having a holding surface for holding the substrate; a vibration unit for applying vibration to the substrate; and a control unit for controlling a process of holding the substrate on the stage, wherein the holding surface includes a first holding area for holding a first portion of the substrate and a second holding area for holding a second portion of the substrate that is different from the first portion, and the control unit controls the stage to move the substrate away from the second holding area while the first portion of the substrate is held in the first holding area during the process. did to the second portion of the substrate hand The vibration unit is the resonant frequency of the second part Vibration R This brings the second holding area and the second portion into contact with each other, thereby causing the second portion to be held by the second holding area.

[0007] Further objects and other aspects of the present invention will become apparent from the following description of preferred embodiments with reference to the accompanying drawings. [Effects of the Invention]

[0008] According to the present invention, for example, it is possible to provide an advantageous technique for holding a warped substrate. [Brief explanation of the drawings]

[0009] [Figure 1] Schematic diagram showing an example of the configuration of an exposure apparatus [Figure 2] Schematic diagram showing an example of the configuration of a substrate transport system in an exposure apparatus. [Figure 3] FIG. 10 is a diagram for explaining a process of supplying a substrate onto a substrate stage. [Figure 4] Schematic diagram showing an example of the configuration of the substrate stage (holding surface) [Figure 5] 10 is a flowchart showing a holding process in a substrate holding device. [Figure 6] A schematic diagram showing the state of the holding process when the substrate driving mechanism is used as the vibration unit in time series. [Figure 7] FIG. 10 is a diagram for explaining the time during which vibration is applied to the outer periphery of the substrate by the vibration unit. [Figure 8] FIG. 1 is a diagram for explaining a resonance mode at the outer periphery of a substrate. [Figure 9] FIG. 10 is a diagram showing an example in which the frequency of the vibration applied to the outer periphery of the substrate by the vibration unit is changed. [Figure 10] A schematic diagram showing the state of the holding process in time series when the actuator that drives the lift pin is used as the vibration unit. [Figure 11] Schematic diagram showing a modified example of the substrate stage (holding surface) [Figure 12] A schematic diagram showing the holding process in chronological order when the substrate feeding hand is used as the vibration unit. [Figure 13] A schematic diagram showing the holding process in chronological order when the substrate feeding hand is used as the vibration unit. [Figure 14] FIG. 13 is a schematic diagram showing an example of the configuration of a holding surface of a substrate stage according to a fifth embodiment; [Figure 15] A diagram showing the timing of gas injection from the injection unit. [Figure 16] A schematic diagram showing the state of the holding process when the sound wave output unit is used as the vibration unit in time series. DETAILED DESCRIPTION OF THE INVENTION

[0010] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the scope of the invention claimed. Although multiple features are described in the embodiments, not all of these multiple features are necessarily essential to the invention, and multiple features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same reference numerals are used to designate the same or similar components, and redundant explanations will be omitted.

[0011] In the following embodiments, an exposure apparatus that exposes a substrate to light and transfers a pattern from an original onto the substrate is used as an example of a lithography apparatus that forms a pattern on a substrate, and an example of applying a substrate holding device according to the present invention to an exposure apparatus is described. However, the present invention is not limited to this. For example, the substrate holding device according to the present invention can also be applied to other lithography apparatuses, such as a molding apparatus (imprinting apparatus, planarization apparatus) that uses a mold to mold a composition on a substrate, or a drawing apparatus that uses a charged particle beam to form a pattern on a substrate. Furthermore, the substrate holding device according to the present invention is not limited to lithography apparatuses, and can be applied to other processing apparatuses that perform well-known processes, such as a measurement apparatus that measures a substrate or a processing apparatus that processes a substrate.

[0012] In this specification and the accompanying drawings, directions are indicated in an XYZ coordinate system in which the direction along the optical axis of the projection optical system 5 (described later) is defined as the Z-axis direction, and the plane perpendicular to the Z-axis direction is defined as the XY plane. In the XYZ coordinate system, the directions parallel to the X, Y, and Z axes are defined as the X-axis direction, the Y-axis direction, and the Z-axis direction, respectively, and rotation around the X-axis, the Y-axis direction, and the Z-axis direction are defined as the θX direction, the θY direction, and the θZ direction, respectively. Control or drive along the X-axis, Y-axis, and Z-axis refers to control or drive along the X-axis, Y-axis, and Z-axis directions, respectively. Control or drive along the θX-axis, θY-axis, and θZ-axis refers to control or drive along the rotation direction around the X-axis, the Y-axis, and the Z-axis, respectively. Position refers to information that can be determined based on coordinates of the X-axis, Y-axis, and Z-axis, and tilt (orientation) refers to information that can be determined by values ​​of the θX-axis, θY-axis, and θZ-axis. Positioning refers to control of position and / or tilt (orientation). In the following description, when the term "X-axis direction" is used, it can be defined as including the +X-axis direction and the -X-axis direction. The same applies to the "Y-axis direction" and the "Z-axis direction."

[0013] First Embodiment A first embodiment of the present invention will be described. Fig. 1 is a schematic diagram showing an example of the configuration of an exposure apparatus 100 of this embodiment. The exposure apparatus 100 of this embodiment is an apparatus that performs an exposure process of exposing a substrate 9 to light to transfer a pattern of an original 2 onto the substrate. The exposure process can be performed on each of the shot areas on the substrate 9.

[0014] The exposure apparatus 100 may include, for example, an illumination system 1, an original stage 3, a projection optical system 5 (projection exposure lens), a substrate stage 8 (substrate chuck), and a substrate driving mechanism 6. The illumination system 1 illuminates the original 2. The original 2 is a mask or reticle and has a circuit pattern to be transferred onto a substrate. The original stage 3 generates an attractive force such as vacuum or electrostatic force to hold the original 2, and may be configured to be movable in each of multiple axial directions (e.g., six axial directions: X-axis, Y-axis, Z-axis, θX-axis, θY-axis, and θZ-axis) by a driving mechanism (not shown). The projection optical system 5 projects the pattern of the original 2 illuminated by the illumination system 1 onto the substrate. The substrate stage 8 has a holding surface that generates an attractive force such as vacuum or electrostatic force to hold (suction-hold) the substrate 9, and may be configured to be movable in each of multiple axial directions (e.g., six axial directions: X-axis, Y-axis, Z-axis, θX-axis, θY-axis, and θZ-axis) by the substrate driving mechanism 6. For example, a semiconductor wafer or a glass plate can be used as the substrate 9. The substrate driving mechanism 6 drives the substrate stage 8 in each of a plurality of axial directions, thereby driving the substrate 9 held by the substrate stage 8 in each of a plurality of axial directions.

[0015] Here, the substrate stage 8 and the substrate driving mechanism 6 may be understood as constituting part of a substrate holding device that holds the substrate 9. The specific configuration of the substrate holding device will be described later. Furthermore, the illumination system 1, the original stage 3, and the projection optical system 5 may be understood as constituting a formation unit that forms a pattern on a substrate held by the substrate holding device (substrate stage 8).

[0016] The exposure apparatus 100 may also include an original position measurement unit 4, a substrate position measurement unit 7, and an autofocus unit 10. The original position measurement unit 4 includes, for example, a laser interferometer and measures the position in the XY directions (directions along the XY plane) of the original 2 held by the original stage 3. The substrate position measurement unit 7 includes, for example, a laser interferometer and measures the position in the XY directions of the substrate 9 held by the substrate stage 8. The autofocus unit 10 measures the surface position (focus position) of the substrate 9 by irradiating light obliquely onto the surface (exposed surface) of the substrate 9 and detecting the light reflected from the surface. In this embodiment, the substrate driving mechanism 6 is configured to support the substrate stage 8 and move it in the XY directions, thereby driving the substrate stage 8 and the substrate 9 in the XY directions. Therefore, the substrate position measurement unit 7 measures the position of the substrate driving mechanism 6 in the XY directions, and can determine the position of the substrate 9 in the XY directions based on the measurement results.

[0017] Next, the transportation of substrate 9 in exposure apparatus 100 will be described with reference to Figure 2. Figure 2 is a schematic diagram of exposure apparatus 100 as seen from above (in the +Z axis direction), and shows an example configuration of a substrate transport system for transporting (loading and unloading) substrate 9 onto substrate stage 8. The example in Figure 2 shows chamber 30, substrate stage 8, substrate driving mechanism 6, pre-alignment unit 13, substrate transport hand 14, substrate feed hand 12, control unit 15, substrate load station 16, and substrate unload station 17.

[0018] The chamber 30 maintains the exposure environment at constant temperature and humidity. The substrate stage 8 holds the substrate 9 and is positioned below the projection optical system 5 when performing exposure processing on the substrate 9. The substrate stage 8 can also be moved to a substrate recovery position 18 and a substrate supply position 19, indicated by triangles in FIG. 2, by driving the substrate driving mechanism 6. The substrate recovery position 18 is the position to which the substrate stage 8 moves (is positioned) when recovering the substrate 9 from the substrate stage 8 after exposure processing. The substrate supply position 19 is the position to which the substrate stage 8 moves (is positioned) when transporting (supplying) the pre-aligned substrate 9 onto the substrate stage 8.

[0019] Control unit 15 is configured by, for example, a computer having a processor such as a CPU and a memory, and controls each part of exposure apparatus 100 to control each process performed by exposure apparatus 100 (for example, the process of holding substrate 9 by substrate stage 8, and the process of exposing substrate 9). In the example of Fig. 2, control unit 15 is electrically connected to user interface 31. Note that control unit 15 may be configured by one computer, or may be configured by multiple computers.

[0020] The substrate loading station 16 is a location where a substrate 9 loaded from outside the chamber 30 (i.e., a substrate 9 that has not yet been subjected to exposure processing in the exposure apparatus 100) is placed. The substrate unloading station 17 is a location where a substrate 9 that has already been subjected to exposure processing in the exposure apparatus 100 (i.e., a substrate 9 that is to be unloaded to the outside of the chamber 30) is placed. The pre-alignment unit 13 performs pre-alignment (pre-processing) on ​​the substrate 9 prior to the exposure processing. The pre-alignment can be, for example, a process of detecting the center position of the substrate 9, the orientation of the substrate 9, and the amount of warping of the substrate 9 while rotating the substrate 9.

[0021] The substrate transport hand 14 is a substrate transport mechanism that transports the substrate 9 from the substrate carry-in station 16 to the pre-alignment unit 13, and retrieves the substrate 9 from the substrate stage 8 arranged at the substrate recovery position 18 and transports it to the substrate unloading station 17. The substrate feed-in hand 12 is a substrate transport mechanism (transport unit) that transports the substrate that has been pre-aligned in the pre-alignment unit 13 onto the substrate stage 8 arranged at the substrate supply position 19.

[0022] Here, the substrate stage 8 is provided with a plurality of lift pins 11 (three in FIG. 2 ) that can protrude from the holding surface of the substrate stage 8 in order to raise and lower the substrate 9 relative to the holding surface of the substrate stage 8. When the substrate feed hand 12 supplies the substrate 9 onto the substrate stage 8, and when the substrate transport hand 14 retrieves the substrate 9 from the substrate stage 8, the plurality of lift pins 11 protrude from the holding surface of the substrate stage 8 to separate the substrate 9 from the holding surface. By having the plurality of lift pins 11 protrude from the holding surface of the substrate stage 8 in this manner, the substrate feed hand 12 and / or the substrate transport hand 14 can be inserted between the substrate 9 and the holding surface of the substrate stage 8. Note that the protrusion of the lift pins 11 from the holding surface of the substrate stage 8 may be achieved by moving the substrate stage 8 up and down while the lift pins 11 are stopped, or by moving the lift pins 11 up and down while the substrate stage 8 is stopped. The plurality of lift pins 11 may be configured to move in the X and Y directions integrally with the substrate stage 8.

[0023] Next, the process of supplying (transferring) the substrate 9 onto the substrate stage 8 by the substrate feed hand 12 will be described with reference to Fig. 3. Fig. 3 is a diagram for explaining the process of the substrate feed hand 12 supplying the substrate 9 onto the substrate stage 8, and Figs. 3(a) to 3(e) show the operations of the substrate feed hand 12 and the lift pins 11 of the substrate stage 8 in chronological order.

[0024] First, the substrate 9 that has been pre-aligned in the pre-alignment unit 13 is retrieved by the substrate feed hand 12. Then, the substrate feed hand 12 is driven in the +Y-axis direction (FIG. 3(a)), and the substrate 9 is placed above the holding surface 8a of the substrate stage 8 that is placed at the substrate supply position 19 (FIG. 3(b)). At this time, the lift pins 11 protrude from the holding surface 8a of the substrate stage 8, so the substrate feed hand 12 moves the substrate 9 above the holding surface of the substrate stage 8 so that the substrate 9 does not come into contact with the lift pins 11. Next, the substrate feed hand 12 is driven in the -Z-axis direction to lower the substrate 9 and place it on the lift pins 11 (FIG. 3(c)), and the substrate feed hand 12 is driven in the -Y-axis direction to retract (FIG. 3(d)). This completes the process of supplying the substrate 9 onto the lift pins 11 by the substrate feed hand 12, and the substrate 9 is placed on the lift pins 11. Then, by reducing the amount of protrusion of the lift pins 11 from the holding surface 8a of the substrate stage 8, the substrate 9 can be placed (mounted) on the holding surface 8a of the substrate stage 8 (FIG. 3(e)).

[0025] [About the substrate holding device] The substrate 9 that is subjected to the exposure process by the exposure apparatus 100 may be warped due to the deposition of multiple layers or the formation of a film that is highly stressful or relatively thick on the substrate 9. If the substrate 9 is warped in this way, it becomes difficult to accurately form a pattern on the substrate 9 by the exposure process. Therefore, it is desirable to have the substrate stage 8 hold the substrate 9 so that the warpage of the substrate 9 is reduced (corrected). Therefore, the exposure apparatus 100 of the present embodiment is provided with a substrate holding device that can hold the warped substrate 9. The substrate holding device includes a substrate stage 8 having a holding surface 8a that holds the substrate 9, a vibration unit that applies vibration to the substrate 9, and a control unit 15 that controls the process of holding the substrate 9 on the substrate stage 8 (holding process).

[0026] First, the configuration of the substrate stage 8 of this embodiment will be described. FIG. 4 is a schematic diagram of the holding surface 8a of the substrate stage 8 of this embodiment as viewed from above (in the +Z-axis direction), illustrating an example of the configuration of the substrate stage 8 (holding surface 8a). The holding surface 8a of the substrate stage 8 has a first holding area 81 that holds (holds by suction) a first portion of the substrate 9, and a second holding area 82 that holds (holds by suction) a second portion of the substrate 9 that is different from the first portion. The first holding area 81 and the second holding area 82 can be configured to individually control the suction forces used to attract the substrate 9. Here, the first portion of the substrate 9 is the portion that comes into contact with the holding surface 8a when the substrate 9 is placed on the holding surface 8a, and in this embodiment, is described as the central portion of the substrate 9. The second portion of the substrate 9 is the portion that moves away from the holding surface 8a due to warping of the substrate 9 when the substrate 9 is placed on the holding surface 8a, and in this embodiment, is described as the outer periphery of the substrate 9.

[0027] The first holding area 81 is an area surrounded by a first partition member 83a that protrudes in the +Z axis direction from the main body of the substrate stage 8, and becomes an airtight space when the central portion of the substrate 9 is properly held. The first holding area 81 is provided with a hole 84a that is connected to a vacuum source 88a via piping, and a pressure gauge 89a detects the vacuum pressure (suction force) in the first holding area 81. The first partition member 83a may be configured with a diameter that is half or less the diameter of the substrate 9, for example, so that the central portion of the substrate 9 that comes into contact with the holding surface 8a when the substrate 9 is placed on the holding surface 8a is reliably held by the first holding area 81.

[0028] The second holding area 82 is surrounded by a second partition member 83b that protrudes from the main body of the substrate stage 8 in the +Z-axis direction and is separated from the first holding area 81 by a first partition member 83a. This area forms an enclosed space when the outer periphery of the substrate 9 is properly held. The second holding area 82 is provided with a hole 84b connected to a vacuum source 88b via a pipe, and a pressure gauge 89b detects the vacuum pressure (suction force) in the second holding area 82. The second partition member 83b preferably has a diameter slightly smaller than the outer shape of the substrate 9 so that it contacts the outer edge of the substrate 9 when the outer periphery of the substrate 9 is properly held by the second holding area 82. The second holding area 82 also has a plurality of through-holes 85 (three in FIG. 4 ) through which the lift pins 11 pass, allowing the lift pins 11 to protrude from the holding surface 8a. Each of the through-holes 85 is surrounded by a partition member 86.

[0029] A plurality of pin-shaped or rib-shaped protrusions 87 are provided in each of the first holding area 81 and the second holding area 82. Although only some of the protrusions 87 formed in each of the holding areas 81-82 are shown in Fig. 4, the plurality of protrusions 87 may be provided on the entire holding surface 8 (each of the holding areas 81-82).

[0030] By configuring the holding surface 8a of the substrate stage 8 in this manner, it is possible to individually control the suction force (vacuum force, holding force) generated in each of the first holding area 81 and the second holding area 82. While FIG. 4 shows an example in which the holding surface 8a is configured with two holding areas 81-82, it may be configured with three or more holding areas. Also, while FIG. 4 shows the holding areas 81-82 as concentric regions, they may be polygonal rather than concentric or circular. Furthermore, while the example in FIG. 4 uses separate vacuum sources 88a and 88b for the first holding area 81 and the second holding area 82, a common vacuum source may also be used.

[0031] Next, the holding process for holding a warped substrate 9 on the substrate stage 8 in the substrate holding device of this embodiment will be described with reference to FIGS. 5 and 6. FIG. 5 is a flowchart showing the holding process in the substrate holding device of this embodiment. Each step in the flowchart of FIG. 5 can be executed by the control unit 15. FIG. 6 is a schematic diagram showing the holding process in the substrate holding device of this embodiment in chronological order. FIG. 6 illustrates the substrate 9, substrate stage 8, and substrate driving mechanism 6. In this embodiment, an example will be described in which the substrate 9 has a downwardly convex warp and the substrate driving mechanism 6 is used as a vibration unit that applies vibration to the substrate 9.

[0032] In step S11, as described above with reference to FIG. 3, the control unit 15 places (disposes) the substrate 9 on the holding surface 8a of the substrate stage 8 using the substrate feed hand 12. Next, in step S12, the control unit 15 controls the vacuum sources 88a and 88b to generate suction forces in the first holding area 81 and the second holding area 82 on the holding surface 8a of the substrate stage 8. At this time, as shown in FIG. 6(a), the central portion (first portion) of the substrate 9 comes into contact with the first partition member 83a when the substrate 9 is placed on the holding surface 8a in step S11, and is therefore held by the first holding area 81. On the other hand, the outer peripheral portion (second portion) of the substrate 9 is spaced from the holding surface 8a (second holding area 82) due to warping of the substrate 9, and therefore the outer peripheral edge of the substrate 9 does not come into contact with the second partition member 83b and is not held by the second holding area 82.

[0033] 6(b), the control unit 15 applies vibrations to the outer periphery (second portion) of the substrate 9 by the vibration exciter while generating an attraction force in each of the first holding area 81 and the second holding area 82, causing the outer periphery to resonate. That is, in a state in which the first holding area 81 holds the center of the substrate 9 and the positional relationship between the substrate stage 8 and the substrate 9 is fixed, the control unit 15 applies vibrations to the outer periphery of the substrate 9 by the vibration exciter while generating an attraction force in the second holding area 82, causing the outer periphery to resonate.

[0034] In this embodiment, the substrate driving mechanism 6 is used as the vibration unit, and the substrate driving mechanism 6 vibrates the substrate stage 8 to impart vibration to the outer periphery of the substrate 9. At this time, the control unit 15 acquires information on the resonance frequency at which the outer periphery of the substrate 9 resonates when the center of the substrate 9 is held in the first holding region 81, and can cause the vibration unit (substrate driving mechanism 6) to vibrate the outer periphery of the substrate 9 at the resonance frequency. As shown in FIG. 7 , the control unit 15 can vibrate the outer periphery of the substrate 9 using the vibration unit (substrate driving mechanism 6) for a time period equal to or longer than half the resonance period obtained by the reciprocal of the resonance frequency. Furthermore, the control unit 15 acquires information indicating the amount of warpage of the substrate 9, and can cause the vibration unit (substrate driving mechanism 6) to vibrate the outer periphery of the substrate 9 so that the outer periphery of the substrate 9 resonates with an amplitude equal to or greater than the amount of warpage. This causes the outer periphery of the substrate 9 to oscillate in the Z-axis direction, so that the outer periphery of the substrate 9 can be brought into contact with the second holding region 82 (i.e., the outer edge of the substrate 9 can be brought into contact with the second partition member 83b of the substrate stage 8), and the outer periphery of the substrate 9 can be held by the second holding region 82. The resonant frequency may also be understood as the natural frequency of the substrate 9.

[0035] In step S14, the control unit 15 determines whether the vacuum pressure (suction force) in the second holding area 82 detected by the pressure gauge 89b is within an allowable range. The allowable range may be set to the vacuum pressure (suction force) when the outer periphery of the substrate 9 is properly held by the second holding area 82. If the vacuum pressure detected by the pressure gauge 89b is within the allowable range, it is determined that the outer periphery of the substrate 9 is properly held by the second holding area 82, and the process ends. On the other hand, if the vacuum pressure detected by the pressure gauge 89b is not within the allowable range, step S13 is repeated. Note that the control unit 15 may change the frequency and amplitude of the vibration applied to the outer periphery of the substrate 9 by the vibration unit each time the process returns to step S13.

[0036] Next, the frequency and amplitude of the vibration applied to the substrate 9 so that the outer periphery of the substrate 9 resonates in step S13 described above will be described. The control unit 15 stores a resonant frequency list, a resonant amplitude list, and a substrate warpage list. The resonant frequency list is a list showing the resonant frequencies of the substrate 9 for various combinations of the thickness, dimensions (size), material, etc. of the substrate 9, and is obtained in advance through experiments, simulations, etc. The resonant amplitude list is a list showing the resonant amplitude for the input amplitude at each frequency of the vibration applied to the substrate 9, and is obtained in advance through experiments, simulations, etc. The substrate warpage list is a list of the warpage amounts assumed (estimated) to occur in the substrate 9 for various combinations of the thickness, dimensions, material, etc. of the substrate 9, and is obtained in advance through experiments, simulations, etc.

[0037] The control unit 15 acquires information such as the thickness, dimensions, and material of the substrate 9 (hereinafter, sometimes referred to as substrate information). The substrate information may be information input by a user via the user interface 31, or information obtained by measurement using an external measuring device. The control unit 15 then acquires information on the amount of warpage of the substrate 9 corresponding to the substrate information by referring to the substrate warpage amount list. Note that in this embodiment, the information on the amount of warpage of the substrate 9 is acquired from the substrate warpage amount list based on the substrate information, but information on the amount of warpage of the substrate 9 measured by the pre-alignment unit 13 or an external measuring device may also be acquired from the pre-alignment unit 13 or the external measuring device.

[0038] The control unit 15 also refers to the resonance frequency list to acquire information on the resonance frequency corresponding to the substrate information. Furthermore, the control unit 15 refers to the resonance amplitude list for the resonance frequency corresponding to the substrate information to acquire information on the input amplitude that will provide an amplitude equal to or greater than the acquired amount of warpage of the substrate 9. The control unit 15 applies vibration to the substrate 9 using the vibration unit (substrate driving mechanism 6) based on the thus acquired information on the resonance frequency and the input amplitude. This allows the outer periphery of the substrate 9 to resonate so as to come into contact with the second holding region 82.

[0039] Here, depending on the state (shape) of warpage of the substrate, it may be difficult to efficiently resonate (oscillate) the outer periphery of the substrate 9 simply by vibrating the outer periphery at the primary resonance frequency. Therefore, the outer periphery of the substrate 9 may be vibrated using not only the primary resonance frequency but also secondary or higher resonance frequencies. This allows the outer periphery of the substrate 9 to resonate in various resonance modes, as shown in FIG. 8, so that the outer periphery of the substrate 9 can be more efficiently held in the second holding region 82. FIG. 8(a) shows the vibration of the substrate 9 in the primary resonance mode (primary resonance frequency), FIG. 8(b) shows the vibration of the substrate 9 in the secondary resonance mode (secondary resonance frequency), and FIG. 8(c) shows the vibration of the substrate 9 in the tertiary resonance mode (tertiary resonance frequency).

[0040] For example, the control unit 15 may acquire in advance a resonant frequency list including a list indicating a first resonant frequency, a list indicating a second resonant frequency, and a list indicating a third resonant frequency, and acquire information on the first to third resonant frequencies corresponding to the substrate information. The control unit 15 may then vibrate the substrate 9 using the vibration unit in order of the first to third resonant frequencies, starting from the lowest resonant frequency. The frequencies of the vibrations applied to the substrate 9 are not limited to the first to third resonant frequencies, but may be only the first and second resonant frequencies, or may further include fourth or higher resonant frequencies. The direction of the vibrations applied to the substrate 9 may be any direction, such as the horizontal direction (X-axis direction, Y-axis direction) or the vertical direction (Z-axis direction). However, by setting the direction of the vibrations to be perpendicular to the holding surface 8a of the substrate stage 8 (Z-axis direction), the outer periphery of the substrate 9 can be resonated efficiently.

[0041] As described above, in the substrate holding device of this embodiment, while the central portion of the substrate 9 is held in the first holding area 81, the vibration unit (substrate driving mechanism 6) applies vibration to the outer periphery of the substrate 9 that is separated from the second holding area 82, causing it to resonate. This allows the outer periphery of the substrate 9 to come into contact with the second holding area 82, and the second holding area 82 to hold the outer periphery. In other words, the substrate 9 can be held on the substrate stage 8 so that warping of the substrate 9 is reduced, without using a member that comes into contact with the surface and outer periphery of the substrate 9.

[0042] Second Embodiment A second embodiment of the present invention will be described. In the first embodiment, an example in which vibration is applied to the outer periphery of the substrate 9 at a predetermined resonant frequency is described. In this embodiment, an example in which the frequency of the vibration applied to the outer periphery of the substrate 9 is changed is described. Note that this embodiment basically follows on from the first embodiment, and matters other than those described below are the same as those described in the first embodiment.

[0043] In this embodiment, in step S13 of the flowchart in FIG. 5 described above, control unit 15 generates suction forces in each of first holding area 81 and second holding area 82 while varying the frequency of the vibration applied to the outer periphery (second portion) of substrate 9 by the vibration unit. For example, control unit 15 varies (sweeps) the frequency of the vibration applied to the outer periphery of substrate 9 by the vibration unit over time within a frequency range including the resonant frequency at which the outer periphery of substrate 9 resonates. The frequency range is preferably set to include the first to third resonant frequencies, but may also be set to include only the first resonant frequency, only the first to second resonant frequencies, or fourth or higher resonant frequencies. The frequency range varies depending on the thickness, dimensions, material, etc. of substrate 9, but is preferably 10 to 300 Hz, for example.

[0044] FIG. 9 shows an example in which the frequency of vibration applied to the outer periphery of the substrate 9 by the vibration unit is changed. FIG. 9(a) shows the time change in the frequency of the vibration (input vibration) applied to the outer periphery of the substrate 9 by the vibration unit, and FIG. 9(b) shows the waveform of the vibration (input vibration) applied to the outer periphery of the substrate 9 by the vibration unit. In FIG. 9(b), the maximum value of the excitation force (amplitude) is defined as 1, the start frequency of the change is 10 Hz, and the end frequency is 300 Hz. FIG. 9(c) shows the waveform of the vibration (response vibration, output vibration) generated at the outer periphery of the substrate 9 when vibration is applied to the outer periphery of the substrate 9 with the input waveform shown in FIG. 9(b). In the example of FIG. 9(a), the frequency is increased over time, but the frequency may also be decreased over time. In the example of FIG. 9(a), the frequency is changed at a constant slope over time, but the frequency may also be changed while changing the slope over time. Furthermore, in the example of FIG. 9(a), the frequency is changed continuously over time, but the frequency may be changed in stages over time.

[0045] As shown in Figure 9(c), for a while after the start of vibration, the outer periphery of the substrate 9 vibrates with the same amplitude as the amplitude of the input vibration waveform, but as it approaches the first resonance frequency (around 0.24 sec), the outer periphery of the substrate 9 resonates, and the amplitude of the outer periphery of the substrate 9 increases. Furthermore, after the first resonance frequency is passed, the outer periphery of the substrate 9 vibrates with the same amplitude as the amplitude of the input vibration waveform, but as it approaches the second resonance frequency (around 0.32 sec), the outer periphery of the substrate 9 resonates again, and the amplitude of the outer periphery of the substrate 9 increases. Furthermore, after the second resonance frequency is passed, the outer periphery of the substrate 9 vibrates with the same amplitude as the amplitude of the input vibration waveform, but as it approaches the third resonance frequency (around 0.6 sec), the outer periphery of the substrate 9 resonates again, and the amplitude of the outer periphery of the substrate 9 increases. By changing the frequency of the vibration applied to the outer periphery of the substrate 9 by the vibration applying unit in this way, it is possible to make the outer periphery of the substrate 9 resonate at the first to third resonance frequencies without acquiring (calculating) the first to third resonance frequencies as in the first embodiment. Also, by changing the frequency of the vibration applied to the outer periphery of the substrate 9, the resonance frequency of the substrate 9 can be determined. Therefore, for a next substrate having the same thickness, dimensions, material, etc. as the substrate 9, vibration may be applied to the outer periphery of the substrate 9 at the determined resonance frequency without changing the frequency.

[0046] Here, the warpage shape of the substrate 9 is not limited to a shape in which the warpage angle increases concentrically from the center to the periphery of the substrate 9, as shown in FIG. 8(a). For example, the warpage shape of the substrate 9 may include a shape (sometimes called a twisted shape) in which upward and downward warpage components differ in two mutually perpendicular axial directions, as shown in FIG. 8(b). Furthermore, as shown in FIG. 8(c), the warpage shape may include a shape (sometimes called a wavy shape) that includes higher-order components. For a substrate 9 having such a warpage shape including multiple components, it is effective to change the frequency of vibration applied to the periphery of the substrate 9, as in this embodiment.

[0047] Furthermore, the control unit 15 may set the amplitude of the vibration applied to the outer periphery of the substrate 9 so that the outer periphery of the substrate 9 resonates at an amplitude equal to or greater than the amount of warping obtained from the substrate information (information on the thickness, dimensions, and material of the substrate 9). However, there are cases where an appropriate amplitude cannot be uniquely determined due to variations in the thickness, dimensions, and amount of warping of the substrate 9. In such cases, in addition to changing the frequency of the vibration applied to the outer periphery of the substrate 9, it is also preferable to change the amplitude of the vibration so that the amplitude of the vibration gradually increases.

[0048] As described above, in the present embodiment, in the holding process, the frequency of the vibration applied to the outer periphery of the substrate 9 by the vibration unit is changed within a frequency range including the resonant frequency at which the outer periphery of the substrate 9 resonates. This allows the outer periphery of the substrate 9 to resonate efficiently without calculating the resonant frequency of the outer periphery of the substrate 9.

[0049] Third Embodiment A third embodiment of the present invention will be described. In the first and second embodiments, an example was described in which a substrate driving mechanism 6 is used as a vibration unit that applies vibration to a substrate 9. In this embodiment, an example will be described in which an actuator 20 (drive unit) that drives lift pins 11 is used as a vibration unit, and the actuator 20 vibrates the lift pins 11, thereby vibrating the outer periphery of the substrate 9. Note that this embodiment basically inherits the first embodiment, and is the same as that described in the first embodiment except for the matters described below. Furthermore, the second embodiment may also be applied to this embodiment.

[0050] FIG. 10 is a schematic diagram showing, in time sequence, the holding process when the actuator 20 that drives the lift pins 11 is used as a vibration unit. As shown in FIG. 10( a), when the substrate 9 is supplied onto the lift pins 11 from the substrate feed hand 12, the control unit 15 generates suction forces in each of the first holding area 81 and the second holding area 82. Then, as shown in FIG. 10( b), the control unit 15 causes the actuator 20 to lower the lift pins 11, thereby reducing the amount of protrusion of the lift pins 11 from the holding surface 8a. As a result, the substrate 9 is placed on the holding surface 8a of the substrate stage 8, and the center of the substrate 9 is held by the first holding area 81. Next, as shown in FIG. 10( c), the control unit 15 causes the actuator 20 to abut the lift pins 11 against the outer periphery of the substrate 9, and vibrates the lift pins 11 using the actuator 20, thereby applying vibrations to the outer periphery of the substrate 9 so that the outer periphery resonates. The method for resonating the outer periphery of the substrate 9 can be the same as that described in the first or second embodiment. This causes the outer periphery of the substrate 9 to oscillate, so that the outer periphery of the substrate 9 can be brought into contact with the second holding region 82, and the second holding region 82 can hold the outer periphery of the substrate 9, as shown in FIG. 10(d).

[0051] Here, the lift pins 11 may be provided inside the second partition member 83b (i.e., the second holding region 82) as shown in FIG. 4, or may be provided outside the second partition member 83b as shown in FIGS. 11(a) and 11(b). FIG. 11 is a schematic diagram of the holding surface 8a of the substrate stage 8 as seen from above (the +Z axis direction), showing an example of the configuration of the substrate stage 8 (holding surface 8a) of this embodiment. FIG. 11(a) shows an example of a configuration in which the lift pins 11 are arranged outside the second partition member 83b having a circular shape. FIG. 11(b) shows an example of a configuration in which a portion of the second partition member 83b is recessed inward (toward the first holding region 81), and the lift pins 11 are arranged in the recess D.

[0052] As described above, in this embodiment, the actuator 20 (drive unit) that drives the lift pins 11 is used as a vibration unit, and the actuator 20 vibrates the lift pins 11, thereby vibrating the outer periphery of the substrate 9. In this embodiment, as in the first and second embodiments, the substrate 9 can be held on the substrate stage 8 so that warping of the substrate 9 is reduced.

[0053] <Fourth embodiment> A fourth embodiment of the present invention will be described. In this embodiment, an example will be described in which the substrate feed hand 12 is used as a vibration unit and the outer periphery of the substrate 9 is vibrated by the substrate feed hand 12. Note that this embodiment basically inherits the first embodiment, and the matters other than those described below are the same as those described in the first embodiment. Furthermore, the second and third embodiments may also be applied to this embodiment.

[0054] 12 and 13 are schematic diagrams showing, in time sequence, the holding process when the substrate feed hand 12 is used as a vibration unit. FIG. 12 shows a side view, and FIG. 13 shows a top view. The substrate stage 8 of this embodiment is configured so that when the substrate 9 is transported onto the substrate stage 8 by the substrate feed hand 12, the substrate feed hand 12 and the substrate stage 8 do not interfere with each other (contact each other). For example, as shown in FIG. 13, the substrate stage 8 of this embodiment has a structure that is smaller than the outer diameter of the substrate 9, or a structure in which a portion is cut out so that the substrate feed hand 12 does not interfere with each other. In other words, even when the substrate feed hand 12 and the substrate stage 8 are positioned so as to overlap in the Z axis direction when viewed from above (+Z axis direction), the dimensional relationship between the substrate feed hand 12 and the substrate stage 8 does not cause interference (contact) between them.

[0055] As shown in FIGS. 12(a) and 13(a), the control unit 15 drives the substrate feed hand 12 in the +Y-axis direction to place the substrate 9 above the holding surface 8a of the substrate stage 8 located at the substrate supply position 19. The control unit 15 then generates suction forces in the first holding area 81 and the second holding area 82, and then drives the substrate feed hand 12 in the -Z-axis direction as shown in FIGS. 12(b) and 13(b). As a result, the substrate 9 is placed on the holding surface 8a of the substrate stage 8, and the center of the substrate 9 is held by the first holding area 81. Next, as shown in FIG. 12(c), the control unit 15 brings the substrate feed hand 12 into contact with the outer periphery of the substrate 9 and vibrates the substrate feed hand 12 to vibrate the outer periphery of the substrate 9 so that the outer periphery resonates. The method described in the first or second embodiment can be applied to resonate the outer periphery of the substrate 9. 12(d) and 13(c), the outer periphery of the substrate 9 is brought into contact with the second holding area 82, and the second holding area 82 can hold the outer periphery of the substrate 9. Furthermore, once the outer periphery of the substrate 9 is held by the second holding area 82, the control unit 15 drives the substrate feed hand 12 in the -Y axis direction to retract it.

[0056] As described above, in this embodiment, the substrate feed hand 12 is used as a vibration unit, and the outer periphery of the substrate 9 is vibrated by vibrating the substrate feed hand 12. In this embodiment, as in the first to third embodiments, the substrate 9 can be held on the substrate stage 8 so as to reduce warpage of the substrate 9.

[0057] Fifth Embodiment A fifth embodiment of the present invention will be described. In this embodiment, an example will be described in which an ejection unit 21 that ejects gas toward the outer periphery of the substrate 9 while the central portion of the substrate 9 is held by the first holding region 81 is used as a vibration unit, and the outer periphery of the substrate 9 is vibrated by periodically ejecting gas from the ejection unit 21. Note that this embodiment basically inherits the first embodiment, and is the same as that described in the first embodiment except for the matters described below. Furthermore, the second to fourth embodiments may also be applied to this embodiment.

[0058] 14 is a schematic diagram of the holding surface 8a of the substrate stage 8 as viewed from above (in the +Z-axis direction), showing an example of the configuration of the substrate stage 8 (holding surface 8a) of this embodiment. As shown in Fig. 14, the substrate stage 8 (holding surface 8a) of this embodiment is provided with an ejection unit 21 (ejection holes) that ejects gas (e.g., air) toward the outer periphery of the substrate 9 while the central portion of the substrate 9 is held by the first holding region 81. The ejection unit 21 is connected via a pipe to a gas supply source 22 that supplies compressed gas, and the pipe is provided with an electromagnetic valve 23.

[0059] With the center of substrate 9 held by first holding region 81, control unit 15 controls solenoid valve 23 to periodically inject gas from ejector 21 toward the outer periphery of substrate 9, causing the outer periphery of substrate 9 to vibrate (resonate). It is preferable that ejector 21 be positioned so that the gas hits the portion of substrate 9 where vibration is greatest (for example, the outer periphery). This allows the outer periphery of substrate 9 to oscillate efficiently, so that the outer periphery of substrate 9 comes into contact with second holding region 82, and the outer periphery of substrate 9 can be held by second holding region 82.

[0060] FIG. 15 shows the timing of gas injection from the injection unit 21. FIG. 15(a) shows an example in which a single solenoid valve 23 is provided for multiple injection units 21, and gas is injected from the multiple injection units 21 at the same timing by opening and closing the solenoid valve 23. In this case, the outer periphery of the substrate 9 can be vibrated. However, considering the response time of the solenoid valve 23 and the response of the compressed gas, it is difficult to increase the frequency of the vibration applied to the outer periphery of the substrate 9. Therefore, as shown in FIGS. 15(b) and 15(c), it is preferable to provide a solenoid valve 23 for each of the multiple injection units 21 (injection holes), shift the phase of the timing at which gas is injected from each injection unit 21, and sequentially change the injection unit 21 that injects gas. This makes it possible to increase the frequency of the vibration applied to the outer periphery of the substrate 9.

[0061] The maximum frequency [Hz] that can be handled can be expressed as 1000 [msec] / (solenoid valve response time [msec] × 2) × number of solenoid valves 23 (injectors 21). For example, if the solenoid valve's open / close response time is 10 msec, the maximum expected frequency, excluding the response of the compressed gas traveling through the piping, is 50 Hz, since it takes 10 msec to turn on, 10 msec to turn off, and 20 msec for one cycle. Therefore, to apply vibration to the outer periphery of the substrate 9 at a cycle of 200 Hz, if controlled by a single solenoid valve 23, the response time must be 2.5 msec or less, which is difficult to achieve. On the other hand, by providing a solenoid valve 23 for each of the four injectors 21 and shifting the phase of the gas injection timing of the four injectors 21 by 5 msec, it is possible to apply vibration to the outer periphery of the substrate 9 at 200 Hz.

[0062] As described above, in this embodiment, the ejection unit 21 that ejects gas toward the outer periphery of the substrate 9 is used as a vibration unit, and the outer periphery of the substrate 9 is vibrated by periodically ejecting gas from the ejection unit 21. In this embodiment, as in the first to fourth embodiments, the substrate 9 can be held on the substrate stage 8 so as to reduce warpage of the substrate 9.

[0063] Sixth Embodiment A sixth embodiment of the present invention will be described. In this embodiment, an example will be described in which a sound wave output unit 25 that outputs sound waves toward the outer periphery of the substrate 9 while the central portion of the substrate 9 is held by the first holding region 81 is used as a vibration unit, and the outer periphery of the substrate 9 is vibrated by outputting sound waves from the sound wave output unit 25. Note that this embodiment basically inherits the first embodiment, and is the same as described in the first embodiment except for the matters described below. Furthermore, the second to fifth embodiments may also be applied to this embodiment.

[0064] FIG. 16 is a schematic diagram showing, in time sequence, the holding process when the sonic wave output unit 25 is used as a vibration unit. In the example of FIG. 16, the sonic wave output unit 25 is provided above the substrate stage 8, but it may also be provided on the holding surface 8a of the substrate stage 8 (e.g., the second holding region 82). In FIG. 16(a), a substrate 9 is placed on the holding surface 8a of the substrate stage 8, and the central portion of the substrate 9 is held by the first holding region 81. While generating a suction force in the second holding region 82, the control unit 15 outputs sonic waves from the sonic wave output unit 25 toward the outer periphery of the substrate 9, as shown in FIG. 16(b). At this time, the sonic waves output from the sonic wave output unit 25 are sonic waves having a resonant frequency at which the outer periphery of the substrate 9 resonates. The method for resonating the outer periphery of the substrate 9 can be the same as that described in the first or second embodiment. This causes the outer periphery of the substrate 9 to oscillate, so that the outer periphery of the substrate 9 comes into contact with the second holding area 82, and the second holding area 82 can hold the outer periphery of the substrate 9, as shown in Figure 16(c).

[0065] As described above, in this embodiment, the sound wave output unit 25 that outputs sound waves toward the outer periphery of the substrate 9 is used as a vibration unit, and the outer periphery of the substrate 9 is vibrated by outputting sound waves from the sound wave output unit 25. In this embodiment, as in the first to fifth embodiments, the substrate 9 can be held on the substrate stage 8 so as to reduce warpage of the substrate 9.

[0066] <Embodiments of manufacturing methods of articles> The method for manufacturing an article according to an embodiment of the present invention is suitable for manufacturing articles such as microdevices, such as semiconductor devices, and elements having a microstructure. The method for manufacturing an article according to this embodiment includes a formation step of forming a pattern on a substrate using the above-described lithography apparatus (exposure apparatus), and a processing step of processing the substrate on which the pattern has been formed in the formation step. Furthermore, this manufacturing method includes other well-known processes (oxidation, film formation, vapor deposition, doping, planarization, etching, resist stripping, dicing, bonding, packaging, etc.). The method for manufacturing an article according to this embodiment is advantageous over conventional methods in at least one of the performance, quality, productivity, and production cost of the article.

[0067] The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention. [Explanation of symbols]

[0068] 6: substrate driving mechanism, 8: substrate stage, 8a: holding surface, 81: first holding area, 82: second holding area, 9: substrate, 11: lift pin, 12: substrate feed hand, 15: control unit, 20: actuator (driving unit), 21: ejection unit, 25: sound wave output unit, 100: exposure device

Claims

1. A substrate holding device for holding a warped substrate, a stage having a holding surface for holding the substrate; a vibration unit that applies vibration to the substrate; a control unit that controls a process of holding the substrate on the stage; Equipped with the holding surface includes a first holding area that holds a first portion of the substrate and a second holding area that holds a second portion of the substrate that is different from the first portion, The control unit of the substrate holding device is characterized in that, during the processing, while the first portion of the substrate is held in the first holding area, the vibration unit applies vibration to the second portion of the substrate separated from the second holding area at the resonant frequency of the second portion, thereby bringing the second holding area into contact with the second portion and holding the second portion in the second holding area.

2. The substrate holding device described in claim 1, characterized in that the control unit acquires information indicating the amount of warping of the substrate, and in the processing, vibrates the second portion of the substrate using the vibration unit so that the second portion resonates with an amplitude greater than or equal to the amount of warping.

3. 3. The substrate holding device according to claim 1, wherein the control unit applies vibration to the substrate by the vibration unit for a time period equal to or greater than half of a resonance period obtained by the reciprocal of the resonance frequency.

4. 4. The substrate holding device according to claim 1, wherein the resonant frequencies include a primary resonant frequency and a secondary resonant frequency at which the second portion of the substrate resonates.

5. 5. The substrate support device according to claim 4, wherein the resonant frequencies further include a third-order resonant frequency at which the second portion of the substrate resonates.

6. 6. The substrate holding device according to claim 1, wherein the first portion is a central portion of the substrate, and the second portion is an outer periphery of the substrate.

7. 7. The substrate holding device according to claim 1, wherein the vibration unit vibrates the second portion of the substrate by vibrating the stage while the first portion of the substrate is held by the first holding area.

8. the stage has lift pins provided in the second holding area for raising and lowering the substrate relative to the holding surface; 8. The substrate holding device according to claim 1, wherein the vibration unit abuts the lift pins on the second portion of the substrate while the first portion of the substrate is held by the first holding region, and vibrates the lift pins to vibrate the second portion.

9. the substrate holding device further includes a transport unit that transports the substrate onto the holding surface, A substrate holding device as described in any one of claims 1 to 8, characterized in that the vibration unit abuts the transport unit against the second portion of the substrate while the first portion of the substrate is held by the first holding area, and vibrates the second portion by driving the transport unit.

10. 10. The substrate holding device according to claim 1, wherein the vibration unit includes an ejection unit that ejects gas toward the second portion of the substrate while the first portion of the substrate is held by the first holding area, and vibrates the second portion by periodically ejecting gas from the ejection unit.

11. The substrate holding device according to any one of claims 1 to 10, characterized in that the vibration unit includes an acoustic wave output unit that outputs acoustic waves toward the second portion of the substrate while the first portion of the substrate is held by the first holding area, and vibrates the second portion by outputting acoustic waves from the acoustic wave output unit.

12. 1. A lithographic apparatus for forming a pattern on a substrate, comprising: A substrate holding device according to any one of claims 1 to 11; a forming unit that forms a pattern on the substrate held by the substrate holding device; 1. A lithographic apparatus comprising:

13. A substrate holding method for holding a warped substrate on a stage, comprising: the stage has a holding surface including a first holding area that holds a first portion of the substrate and a second holding area that holds a second portion of the substrate that is different from the first portion; The substrate holding method includes: a first step of holding the first portion of the substrate placed on the holding surface in the first holding area; a second step of applying vibrations to the second portion of the substrate separated from the second holding area at a resonance frequency of the second portion while the first portion is held by the first holding area in the first step, thereby bringing the second holding area into contact with the second portion and holding the second portion in the second holding area; A substrate holding method comprising:

14. a holding step of holding a substrate on a stage using the substrate holding method according to claim 13; a forming step of forming a pattern on the substrate held by the stage after the holding step; a processing step of processing the substrate on which the pattern has been formed in the forming step; a manufacturing process for manufacturing an article from the substrate processed in the processing process; A method for manufacturing an article, comprising:

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