High-pressure substrate processing apparatus and high-pressure chemical vapor deposition method for substrates using the same

Abstract

The present invention provides a high-pressure substrate processing apparatus and a high-pressure chemical vapor deposition method for a substrate using the same, the apparatus comprising: a chamber having an internal space for accommodating a substrate to be processed; a fluid supply module communicating with the internal space and configured to supply a fluid to the substrate to be processed; and a first exhaust module and a second exhaust module communicating with the internal space and configured to exhaust the fluid to different paths, wherein an adjustment amount of the first exhaust module with respect to the pressure of the internal space is smaller than an adjustment amount of the second exhaust module, and the first exhaust module operates only when the internal space is at a high pressure higher than normal pressure.

Description

[Technical Field]

[0001] The present invention relates to a high-pressure substrate processing apparatus for semiconductor manufacturing and a high-pressure chemical vapor deposition method for a substrate using the same. [Background technology]

[0002] Generally, semiconductor manufacturing processes are divided into front-end and back-end processes, which include oxidation, deposition, exposure, etching, ion implantation, and wiring.

[0003] The deposition process is a process of depositing a very thin layer of a desired material on the surface of a wafer. Specific deposition methods include chemical vapor deposition (CVD), physical vapor deposition (PVD), and atomic layer deposition (ALD). Chemical vapor deposition forms thin films through chemical reactions, while physical vapor deposition forms thin films using physical methods. Atomic layer deposition forms very thin films by stacking atomic layers.

[0004] Chemical vapor deposition (CVD) and atomic layer deposition (ALD) have very limited application due to their high thermal budget when forming films at low pressure. In complex circuit patterns with high aspect ratios, step coverage is poor. Poor step coverage reduces the productivity of semiconductor devices. Summary of the Invention [Problem to be solved by the invention]

[0005] An object of the present invention is to provide a high-pressure substrate processing apparatus and a high-pressure chemical vapor deposition method for a substrate using the same, which can improve the quality of a deposited film and increase the productivity of semiconductor devices. [Means for solving the problem]

[0006] To achieve the above object, one aspect of the present invention provides a high-pressure substrate processing apparatus including a chamber having an internal space for accommodating a substrate to be processed; a fluid supply module connected to the internal space and configured to supply a fluid to the substrate to be processed; and a first exhaust module and a second exhaust module connected to the internal space and configured to exhaust the fluid through different paths, wherein the adjustment amount of the first exhaust module with respect to the pressure of the internal space is smaller than the adjustment amount of the second exhaust module, and the first exhaust module operates only when the internal space is at a high pressure higher than atmospheric pressure.

[0007] Here, the second exhaust module operates independently when the internal space is at a low pressure lower than atmospheric pressure, and selectively operates when the internal space is at a high pressure during the process of converting from the high pressure to the low pressure.

[0008] Here, the first exhaust module may include a first exhaust line, and the second exhaust module may include a second exhaust line having a larger flow cross-sectional area than the first exhaust line.

[0009] Here, the diameter of the second exhaust line may be 5 to 10 times larger than the diameter of the first exhaust line.

[0010] Here, the first exhaust module may further include a first pressure control valve installed in the first exhaust line, and the second exhaust module may include a second pressure control valve installed in the second exhaust line and having a larger pressure control range than the first pressure control valve.

[0011] Here, the first pressure control valve may include a needle valve, and the second pressure control valve may include a throttle valve.

[0012] Here, the second exhaust module further includes a vacuum pump installed in the second exhaust line, and the vacuum pump is selectively operated when the pressure is low and when the pressure is high.

[0013] According to another aspect of the present invention, a high-pressure chemical vapor deposition method for a substrate may include: loading a substrate to be processed into an inner space of a chamber; supplying a fluid containing a deposition gas into the inner space to increase the pressure of the inner space to a high pressure higher than atmospheric pressure; and exhausting the fluid through the first exhaust module, which has a relatively small adjustment amount, while keeping the second exhaust module, which has a relatively large adjustment amount for the pressure of the inner space, closed, among first and second exhaust modules forming different exhaust paths, thereby fine-tuning the high pressure so that the deposition gas flows toward the substrate to be processed and is deposited on the substrate.

[0014] Here, the high pressure may be determined within a range of 10 ATM to 40 ATM in order to improve the quality of the film deposited on the substrate.

[0015] Here, the method may further include maintaining the temperature of the substrate to be processed at a temperature determined within a range of 500°C to 1,000°C.

[0016] Here, the deposition gas may include at least one source gas of silane (SiH), disilane (SiH), or dichlorosilane (SiHCl); and at least one reactant gas of ammonia (NH), oxygen (O), nitrous oxide (N0), or ozone (O).

[0017] Here, the method may further include the step of exhausting the fluid through the first exhaust module and the second exhaust module after completion of deposition on the substrate to be processed, so that the pressure in the internal space reaches a low pressure lower than atmospheric pressure.

[0018] Here, after completion of deposition on the substrate to be processed, the step of exhausting the fluid through the first exhaust module and the second exhaust module so that the pressure in the internal space reaches a low pressure lower than atmospheric pressure may include the step of operating the first exhaust module at the high pressure, and stopping the operation of the first exhaust module and operating the second exhaust module at the low pressure.

[0019] After completion of deposition on the substrate to be processed, the step of exhausting the fluid through the first exhaust module and the second exhaust module so that the pressure in the internal space reaches a low pressure lower than atmospheric pressure may include the step of operating the first exhaust module in a first section of the high pressure, and stopping the operation of the first exhaust module and operating the second exhaust module in a second section of the high pressure and the low pressure.

[0020] Here, when the second exhaust module is operated in the second section, the vacuum pump of the second exhaust module can be operated. [Effects of the Invention]

[0021] In the high-pressure substrate processing apparatus and high-pressure chemical vapor deposition method for a substrate using the same, a fluid supplied from a fluid supply module to an internal space of a chamber accommodating a substrate to be processed is exhausted from the internal space by a first exhaust module and a second exhaust module. The first exhaust module controls the pressure of the internal space less than that of the second exhaust module, and the first exhaust module operates only when the internal space is at a high pressure higher than atmospheric pressure, thereby enabling stable deposition on the substrate even at high pressure. High-pressure deposition offers advantages such as improved step coverage of the deposited film, thereby increasing the productivity of semiconductor devices. [Brief explanation of the drawings]

[0022] [Figure 1] 1 is a cross-sectional view showing the structure of a high-pressure substrate processing apparatus 100 according to an embodiment of the present invention. [Figure 2]2 is a cross-sectional view showing how the high-pressure substrate processing apparatus 100 of FIG. 1 performs high-pressure deposition. FIG. [Figure 3] 1. FIG. 4 is a cross-sectional view showing the state in which the high-pressure substrate processing apparatus 100 of FIG. 1 evacuates the internal space 115 after deposition. [Figure 4] FIG. 2 is a block diagram showing the control configuration of the high-voltage substrate processing apparatus 100 of FIG. [Figure 5] 4 is a flowchart illustrating a high-pressure chemical vapor deposition method for a substrate according to another embodiment of the present invention. [Figure 6] 6 is a flowchart specifically illustrating some steps (S3 and S5) of FIG. 5. [Figure 7] 6 is a flowchart specifically illustrating another part of the step (S7) of FIG. 5. [Figure 8] 6 is a cross-sectional view showing a semiconductor device O having a deposition film D2 formed by the high-pressure chemical vapor deposition method for a substrate of FIG. 5. FIG. [Figure 9] 9 is a graph showing experimental results regarding step coverage of the vapor-deposited film D2 of the semiconductor element O of FIG. 8. [Figure 10] 9 is a graph showing experimental results for the deposition rate of the deposited film D2 of the semiconductor element O of FIG. 8. DETAILED DESCRIPTION OF THE INVENTION

[0023] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings.

[0024] The present invention is not limited to the embodiments disclosed below, but may be modified in various ways and realized in various different forms. However, the present embodiments are provided so that the disclosure of the present invention will be complete and will fully convey the scope of the invention to those skilled in the art. Therefore, the present invention is not limited to the embodiments disclosed below, and should be understood to include all modifications, equivalents, and alternatives within the technical spirit and scope of the present invention, as well as the substitution or addition of the configuration of any one embodiment with the configuration of another embodiment.

[0025] The accompanying drawings are merely for the purpose of facilitating understanding of the embodiments disclosed in this specification, and should not be construed as limiting the technical ideas disclosed in this specification, but should be understood to include all modifications, equivalents, or alternatives included within the idea and technical scope of the present invention. In the drawings, the size and thickness of components may be exaggerated or reduced for ease of understanding, but this should not be interpreted as limiting the scope of protection of the present invention.

[0026] The terms used in this specification are merely used to describe particular implementations or embodiments and are not intended to limit the present invention. Furthermore, singular terms include plural terms unless the context clearly dictates otherwise. In this specification, terms such as "comprises," "constitutes," and the like are intended to specify the presence of features, numbers, steps, operations, components, parts, or combinations thereof described in the specification. In other words, in this specification, terms such as "comprises," "constitutes," and the like should be understood not to preclude the possibility of the presence or addition of one or more other features, numbers, steps, operations, components, parts, or combinations thereof.

[0027] Terms including ordinal numbers such as first, second, etc. may be used to describe various components, but the components are not limited by the terms. The terms are used only to distinguish one component from another.

[0028] When a component is referred to as being "coupled" or "connected" to another component, it should be understood that the component may be directly coupled or connected to the other component, but that there may be other components in between. Conversely, when a component is referred to as being "directly coupled" or "directly connected" to another component, it should be understood that there are no other components in between.

[0029] When a component is referred to as being "on top of" or "under" another component, it should be understood that it may not only be located directly on top of the other component, but that there may also be other components in between.

[0030] Unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by a person of ordinary skill in the art to which this invention pertains. Terms as defined in commonly used dictionaries should be interpreted as having a meaning consistent with the meaning they have in the context of the relevant art, and should not be interpreted as having an idealized or overly formal meaning unless expressly defined in this application.

[0031] 1 is a cross-sectional view showing the structure of a high-pressure substrate processing apparatus 100 according to one embodiment of the present invention. In the following, a single-wafer type processing apparatus is exemplified as the high-pressure substrate processing apparatus 100, but the present invention is not limited thereto and can also be applied to a batch type processing apparatus.

[0032] Referring to this figure, a high pressure substrate processing apparatus 100 may include a chamber 110 , a fluid supply module 130 , a first exhaust module 150 , and a second exhaust module 160 .

[0033] The chamber 110 is a hollow structure having an internal space 115. The internal space 115 accommodates a substrate W. The substrate W is generally a wafer, but is not limited thereto. The substrate W may be seated in the internal space 115, specifically on a support module 120. The support module 120 may be configured to support the substrate W at a position higher than the bottom of the internal space 115. The support module 120 may have a temperature unit 125 to adjust the temperature of the substrate W. The temperature unit 125 may be located below the substrate W. The temperature unit 125 may include a heater for increasing the temperature of the substrate W or a cooler for decreasing the temperature of the substrate W.

[0034] The fluid supply module 130 is configured to communicate with the internal space 115 and supply a fluid to the internal space 115. The fluid is typically, but not limited to, a gas. The fluid supply module 130 may specifically include a supply pipe 131, a distributor 133, and a regulator 135. The supply pipe 131 is connected to a fluid tank (not shown) and receives the fluid therefrom. The distributor 133 is connected to the supply pipe 131 and is located above the internal space 115. The distributor 133 uniformly sprays the fluid input from the supply pipe 131 onto an area corresponding to the substrate W. The regulator 135 adjusts the pressure of the fluid input from the supply pipe 131 and supplies the fluid to the distributor 133. In one embodiment, the regulator 135 may have more nozzles than the distributor 133. Alternatively, the diameter of the nozzles of the regulator 135 may be different from the diameter of the nozzles of the distributor 133.

[0035] The first exhaust module 150 and the second exhaust module 160 are in communication with the interior space 115 and are configured to exhaust fluid from the interior space 115. They are in communication with the interior space 115 through the bottom of the chamber 110 opposite the fluid supply module 130. They also form exhaust paths P1 and P2 (see FIG. 3) with different characteristics.

[0036] Specifically, the first exhaust line 151 of the first exhaust module 150 and the second exhaust line 161 of the second exhaust module 160 have different flow cross-sectional areas. The second exhaust line 161 has a larger flow cross-sectional area than the first exhaust line 151. For example, the flow cross-sectional area of ​​the second exhaust line 161 may be 5 to 10 times larger than the flow cross-sectional area of ​​the first exhaust line 151.

[0037] A first on-off valve 153 and a second on-off valve 163 are respectively installed in the first exhaust line 151 and the second exhaust line 161. These allow or block the exhaust of fluid through the first exhaust line 151 or the second exhaust line 161 by being opened or closed.

[0038] The first exhaust line 151 and the second exhaust line 161 are each provided with a first pressure control valve 155 or a second pressure control valve 165. The first pressure control valve 155 and the second pressure control valve 165 have different pressure control ranges. Specifically, the pressure control range of the first pressure control valve 155 is smaller than the pressure control range of the second pressure control valve 165. To this end, a needle valve may be used as the first pressure control valve 155, and a throttle valve may be used as the second pressure control valve 165. The needle valve can finely adjust the pressure of the high-pressure fluid in the first exhaust line 151, which has a small flow cross-sectional area. Here, high pressure refers to a pressure higher than normal pressure (atmospheric pressure), and can be several ATM to several tens of ATM, but is not limited thereto.

[0039] A vacuum pump 167 may also be installed in the second exhaust line 161. The vacuum pump 167 operates to reduce the pressure in the internal space 115. Here, the low pressure is a pressure lower than atmospheric pressure, for example, a pressure up to 1 mTorr. The vacuum pump 167 may also be operated in a portion of the second exhaust line 161 at atmospheric pressure to increase the pumping speed of the fluid being exhausted along the second exhaust line 161.

[0040] FIG. 2 is a cross-sectional view showing how the high-pressure substrate processing apparatus 100 of FIG. 1 performs high-pressure deposition.

[0041] Referring further to this figure, in order to perform high-pressure deposition on the substrate W, the fluid supply module 130 injects fluid into the internal space 115. The fluid must flow toward the substrate W and be deposited on the substrate W under high-pressure conditions. To create the fluid flow, the fluid in the internal space 115 must be continuously exhausted to the outside.

[0042] For this purpose, the second exhaust module 160 is in an inoperative state, and the first exhaust module 150 is in an activated state. That is, the second opening / closing valve 163 must be in a closed state, and the first opening / closing valve 153 must be in an open state.

[0043] When the first opening / closing valve 153 is open, the first pressure control valve 155 operates to maintain the pressure in the internal space 115 at a set high pressure, for example, within a range of several ATM to several tens of ATM. The first pressure control valve 155 finely adjusts the pressure in the internal space 115 by increasing or decreasing the opening of the valve. Fine pressure adjustment at high pressures is difficult with the second pressure control valve 165.

[0044] FIG. 3 is a cross-sectional view showing the state in which the high-pressure substrate processing apparatus 100 of FIG. 1 evacuates the internal space 115 after deposition.

[0045] Referring to this figure, after high-pressure deposition is completed, the fluid in the internal space 115 must be completely evacuated. This must be done to unload the deposited substrate W and load a new substrate. If by-products from the deposition process are not completely evacuated, problems may occur with deposition on the new substrate.

[0046] For overall exhaust, the first exhaust module 150 and the second exhaust module 160 are used together. For example, the first exhaust module 150 may be operated first, and then the second exhaust module 160 may be operated at a specific pressure.

[0047] Specifically, the first exhaust module 150 operates at high pressure but not at low pressure. The first exhaust module 150 may operate only up to a specific high pressure close to normal pressure, for example, up to 2 ATM. The second exhaust module 160 operates at low pressure. The second exhaust module 160 may operate from the specific high pressure or may not operate at all at high pressure. When the second exhaust module 160 operates from the specific high pressure, the first exhaust module 150 may not operate even though it is in a certain high pressure range. Thus, high pressure may be referred to as two ranges. For example, the pressure range from several tens of ATM to 2 ATM may be referred to as the first range, and the remaining pressure range within the high pressure may be referred to as the second range. Although the reference pressure separating the first and second ranges is presented as 2 ATM, it is not limited thereto. For example, the reference pressure may be 3 ATM or 1.5 ATM.

[0048] FIG. 4 is a block diagram showing the control configuration of the high-voltage substrate processing apparatus 100 of FIG.

[0049] Referring to this figure, the high pressure substrate processing apparatus 100 may include a sensing module 170, a control module 180, and a storage module 190 in addition to the temperature adjustment unit 125 and the like described above.

[0050] The sensing module 170 is configured to sense the environment of the chamber 110, specifically, the internal space 115. The sensing module 170 may include a pressure gauge 171 and a temperature gauge 175. The pressure gauge 171 senses the pressure of the internal space 115, while the temperature gauge 175 senses the temperature of the substrate W.

[0051] The control module 180 is configured to control the temperature adjustment unit 125, the fluid supply module 130, etc. The control module 180 can control the temperature adjustment unit 125, etc. based on the sensing result of the sensing module 170.

[0052] The storage module 190 is configured to store data, programs, etc. that the control module 180 can refer to for control purposes. The storage module 190 may include at least one type of storage medium, including a flash memory, a hard disk, a magnetic disk, and an optical disk.

[0053] According to this configuration, the control module 180 controls the temperature control unit 125 and other components to perform the high pressure chemical vapor deposition method for a substrate according to an embodiment of the present invention.

[0054] Specifically, the control module 180 controls the operation of the fluid supply module 130, the first exhaust module 150, and the second exhaust module 160 based on the pressure of the internal space 115 obtained by the pressure gauge 171. As a result, the pressure of the internal space 115 can be adjusted to a set high or low pressure.

[0055] The control module 180 also controls the operation of the temperature adjustment unit 125 based on the temperature of the substrate W obtained by the temperature gauge 175. By operating the temperature adjustment unit 125, the substrate W can be heated to reach a process temperature or cooled to reach a waiting temperature.

[0056] The high pressure chemical vapor deposition method controlled by the control module 180 will be described in detail with reference to FIGS.

[0057] FIG. 5 is a flowchart illustrating a high pressure chemical vapor deposition method for a substrate according to another embodiment of the present invention.

[0058] Referring to this figure (and FIGS. 1 to 4), the control module 180 first controls the loading of the substrate W to be processed into the internal space 115 (S1). When the substrate W is loaded, the internal space 115 may be in a low-pressure state. The substrate W may be loaded into the internal space 115 via a load lock chamber (not shown).

[0059] After the substrate W is loaded, the control module 180 controls the fluid supply module 130 to supply a fluid at high pressure into the internal space 115 (S3). The fluid includes a deposition gas. The deposition gas may include a silicon-based source gas and an oxygen- or nitrogen-based reactive gas. The source gas may include silicilane (SiH), disilane (SiH), or dichlorosilane (SiHCl). The reactive gas may include ammonia (NH), oxygen (O), nitrous oxide (N0), or ozone (O). The fluid may also include an ambient gas. The ambient gas increases the pressure in the internal space 115 to reach the set high-pressure condition. The ambient gas may be, for example, nitrogen (N), but is not limited to this.

[0060] Deposition is performed on the substrate W to be processed at high pressure (S5). To this end, the deposition gas is supplied into the internal space 115 after the internal space 115 has reached a set high pressure due to the atmospheric gas. The deposition gas flows toward the substrate W and reacts with the surface of the substrate W, thereby being deposited on the substrate W. The deposition gas does not necessarily have to be supplied after the atmospheric gas has been supplied into the internal space 115, but may also be supplied into the internal space 115 together with the atmospheric gas.

[0061] After deposition on the substrate W is performed, the pressure in the internal space 115 is converted to a low pressure (S7). The conversion to a low pressure is achieved by operating the first exhaust module 150 and the second exhaust module 160. By exhausting the internal space 115 until it reaches a low pressure, by-products generated during the deposition process can be completely discharged from the internal space 115. This prevents contamination of the substrate to be subsequently deposited.

[0062] At low pressure, the substrate W is unloaded from the internal space 115 (S9). The unloading of the substrate W can be performed by a load lock chamber (not shown) that communicates with the internal space 115.

[0063] FIG. 6 is a flowchart specifically showing some steps (S3 and S5) of FIG.

[0064] Continuing to refer to this figure, in order to supply the fluid to the internal space 115, the control module 180 first closes the first opening / closing valve 153 and the second opening / closing valve 163 (S11).

[0065] With exhaust to the internal space 115 blocked, the control module 180 controls the fluid supply module 130 to supply the fluid to the internal space 115 (S13). As the fluid, the ambient gas is preferentially supplied, so that the pressure in the internal space 115 can increase.

[0066] The control module 180 monitors the pressure in the internal space 115 using the pressure gauge 171. When the pressure in the internal space 115 reaches a set high pressure (S15), the fluid supply module 130 can supply the deposition gas.

[0067] The control module 180 opens the first opening / closing valve 153 (S17). The second opening / closing valve 163 remains closed. By opening the first opening / closing valve 153, the deposition gas flows through the substrate W toward the first exhaust line 151.

[0068] The control module 180 adjusts the aperture of the first pressure control valve 155 (S19). The control module 180 determines the aperture of the first pressure control valve 155 based on the pressure sensed by the pressure gauge 171. By adjusting the aperture of the first pressure control valve 155, the pressure in the internal space 115 is precisely adjusted. As a result, the flow rate of the deposition gas flowing toward the substrate W is also adjusted.

[0069] FIG. 7 is a flowchart specifically illustrating another part of the step (S7) of FIG.

[0070] Referring again to this figure, for high-pressure exhaust, the control module 180 basically uses the first exhaust module 150. The first opening / closing valve 153 remains open. The opening of the first pressure control valve 155 can be additionally adjusted (S21). The opening may need to be different when exhausting the fluid compared to when the deposition gas flows toward the substrate W. Using the first exhaust module 150, the pressure in the internal space 115 can be reduced from several tens of ATM to atmospheric pressure.

[0071] However, the second exhaust module 160 may be selectively used at a specific high pressure, for example, at about 2 ATM (S23). Alternatively, the pressure may be reduced to normal pressure by using only the first exhaust module 150 (S25).

[0072] If it is decided to use the second exhaust module 160 in a certain high-pressure section, the first exhaust module 150 may no longer be used. To this end, the first opening / closing valve 153 must be closed and the second opening / closing valve 163 must be opened (S27).

[0073] By opening the second on-off valve 163, the opening degree of the second pressure control valve 165 can be adjusted according to the pressure in the internal space 115 (S29). The vacuum pump 167 also starts operating (S31). The second exhaust module 160, specifically the vacuum pump 167, starts operating from a specific high pressure, enabling fast exhaust from the specific pressure to atmospheric pressure. This time reduction is particularly useful in single-wafer processing equipment that processes wafers one by one.

[0074] When the pressure in the internal space 115 reaches a set low pressure, for example, 1 mTorr (S33), the control module 180 ends the conversion to low pressure (S7, see FIG. 5).

[0075] Hereinafter, experimental results on the characteristics of thin films deposited by the above-described high pressure chemical vapor deposition method will be described with reference to FIGS.

[0076] FIG. 8 is a cross-sectional view showing a semiconductor device O having a deposition film D2 formed by the high-pressure chemical vapor deposition method for a substrate of FIG.

[0077] Referring to this figure, a semiconductor device O is formed by forming a first deposited film D1 on a substrate S and then forming a trench T. The first deposited film D1 may be an oxide film or a nitride film.

[0078] The semiconductor device O has a second deposited film D2 formed thereon by the high-pressure chemical vapor deposition method described above. The second deposited film D2 may also be an oxide film or a nitride film, and may be a film of a different type from the first deposited film D1.

[0079] FIG. 9 is a graph showing the experimental results of the step coverage of the vapor-deposited film D2 of the semiconductor element O of FIG.

[0080] Further referring to this figure, the film quality of the second deposited film D2 of the semiconductor element O is affected by the set high pressure.

[0081] Specifically, the pressure in the internal space 115 was set within a range of 0.13 ATM to 40 ATM. The film quality of the second vapor-deposited film D2 was evaluated from the viewpoint of step coverage.

[0082] When the pressure of the internal space 115 is 0.13 ATM, the step coverage is at a level of 83%. At 1 ATM and 5 ATM, the step coverage is at a level of 85% and 88%. Then, at 10 ATM, the step coverage is at a level of 98% to 99%. As the pressure increases to 20 ATM, 30 ATM, and 40 ATM, the step coverage improves minutely.

[0083] Based on these results, the pressure at the high pressure may be determined within a range of 10 ATM to 40 ATM in order to improve the quality of the film deposited on the substrate S. Furthermore, the pressure at the high pressure may be determined within a range of 10 ATM to 30 ATM. The maximum pressure is limited to 30 ATM in consideration of the fact that step coverage reaches saturation at 30 ATM.

[0084] FIG. 10 is a graph showing experimental results for the deposition rate of the deposited film D2 of the semiconductor device O of FIG.

[0085] Further reference to this figure confirms that vapor deposition at 10 ATM results in higher deposition efficiency of the deposited film D2 than vapor deposition at 0.13 ATM. The temperature of the substrate S was adjusted within a range of 400°C to 1000°C, and it was confirmed that the deposition efficiency of the deposited film D2 was high at all temperatures when high-pressure deposited. It was also confirmed that a high-pressure process at a relatively low temperature exhibited superior deposition performance compared to a low-pressure process.

[0086] If the temperature of the substrate S is outside the range of 500°C to 1,000°C, the gas decomposition and reaction rate of the silicon source and reactants become significantly higher. This hinders the uniformity of the film quality of the deposited film D2 and causes a loss of film quality control, which can result in a decrease in deposition quality despite the high pressure conditions. Therefore, it is preferable to set the temperature of the substrate S within the range of 500°C to 1,000°C. Furthermore, if the temperature of the substrate S approaches 1,000°C, there is a high possibility of abnormal reactions occurring. For this reason, high-pressure deposition can be performed at a temperature range of 500°C to 900°C. [Industrial Applicability]

[0087] The present invention has industrial applicability in the fields of manufacturing high pressure substrate processing equipment and high pressure chemical vapor deposition of substrates.

Claims

1. a chamber having an internal space for accommodating a substrate to be processed; a fluid supply module that is in communication with the internal space and configured to supply a fluid to the substrate to be processed; and a first exhaust module and a second exhaust module communicating with the interior space and configured to exhaust the fluid to different paths; a first exhaust module for adjusting the pressure of the internal space to a pressure lower than that of the second exhaust module, the second exhaust module including a vacuum pump, the first exhaust module not connected to the vacuum pump, and the first exhaust module only operating when the internal space is at a high pressure higher than atmospheric pressure.

2. The second exhaust module is 2. The high-pressure substrate processing apparatus according to claim 1, which operates independently when the internal space is at a low pressure lower than atmospheric pressure, and which selectively operates when the internal space is at a high pressure during the process of converting from the high pressure to the low pressure.

3. The first exhaust module is a first exhaust line; The second exhaust module is The high pressure substrate processing apparatus of claim 1 , further comprising a second exhaust line having a larger flow cross-sectional area than the first exhaust line.

4. The diameter of the second exhaust line is 4. The high-pressure substrate processing apparatus according to claim 3, wherein the diameter of the first exhaust line is 5 to 10 times larger than that of the second exhaust line.

5. The first exhaust module is The apparatus further includes a first pressure control valve installed in the first exhaust line, The second exhaust module is 4. The high pressure substrate processing apparatus of claim 3, further comprising a second pressure control valve installed in the second exhaust line and having a pressure control range greater than that of the first pressure control valve.

6. the first pressure regulating valve includes a needle valve; The high pressure substrate processing apparatus of claim 5 , wherein the second pressure control valve includes a throttle valve.

7. The vacuum pump 6. The high-pressure substrate processing apparatus according to claim 5, which selectively operates when the internal space is at a low pressure lower than atmospheric pressure and when the internal space is at a high pressure.

8. loading a substrate to be processed into the interior space of the chamber; supplying a fluid containing a deposition gas into the internal space to increase the pressure of the internal space to a high pressure higher than atmospheric pressure; a first exhaust module and a second exhaust module, which form different exhaust paths, configured to have a relatively large adjustment amount for the pressure of the internal space, and a second exhaust module, which has a relatively small adjustment amount, is closed, and the fluid is exhausted through the first exhaust module, which has a relatively small adjustment amount, to finely adjust the high pressure so that the deposition gas flows toward the substrate to be processed and is deposited on the substrate; and and after completing deposition on the substrate to be processed, exhausting the fluid through the first exhaust module and the second exhaust module until the pressure in the internal space reaches a low pressure lower than atmospheric pressure; the step of exhausting the fluid through the first exhaust module and the second exhaust module after completion of deposition on the substrate to be processed so that the pressure in the internal space reaches a low pressure lower than atmospheric pressure, activating the first exhaust module at the high pressure, and deactivating the first exhaust module and activating the second exhaust module at the low pressure; A high-pressure chemical vapor deposition method for a substrate, wherein when the second exhaust module is operated, a vacuum pump connected to the second exhaust module but not connected to the first exhaust module is operated.

9. The high pressure is 9. The high pressure chemical vapor deposition method for a substrate according to claim 8, wherein the pressure is determined within a range of 10 ATM to 40 ATM to improve the quality of the film deposited on the substrate.

10. 9. The high pressure chemical vapor deposition method for a substrate according to claim 8, further comprising the step of maintaining the temperature of the substrate to be processed at a temperature determined within a range of 500 to 1,000 degrees Celsius.

11. The deposition gas is silane (SiH ４ ), dicilane (Si ２ H ６ ) or dichlorosilane (SiH ２ Cl ２ ) at least one source gas; and Ammonia (NH ３ ), oxygen (O ２ ), nitrous oxide (N ２ O) or ozone (O ３ 9. The high-pressure chemical vapor deposition method for a substrate according to claim 8, further comprising at least one reactive gas selected from the group consisting of:

12. the step of exhausting the fluid through the first exhaust module and the second exhaust module after completion of deposition on the substrate to be processed so that the pressure in the internal space reaches a low pressure lower than atmospheric pressure, 9. The high-pressure chemical vapor deposition method for a substrate of claim 8, further comprising: operating the first exhaust module in the first section of the high pressure; and stopping the operation of the first exhaust module and operating the second exhaust module in the second section of the high pressure and the low pressure.

13. 13. The high-pressure chemical vapor deposition method for a substrate according to claim 12, wherein when the second exhaust module is operated in the second section, a vacuum pump of the second exhaust module is operated.

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