Plasma processing equipment

Abstract

In the present invention, during an interlock mechanism operation of a plasma treatment device, an electronic device mounted in the plasma treatment device is protected.　This plasma treatment device comprises: a plasma treatment chamber; a base that is disposed inside the plasma treatment chamber and has a heat transfer medium flow path and a space; an electrostatic chuck disposed on the base; a first heater element disposed inside the electrostatic chuck; a second heater element disposed inside the space; a control circuit board that includes at least one control element electrically connected to at least one of the first heater element and the second heater element, and is disposed within the space; and a recovery circuit that is electrically connected between the second heater element and the at least one control element, and that is configured to supply power to the second heater element on the basis of the temperature inside the space.

Description

[Technical Field]

[0001] The present disclosure relates to a plasma processing apparatus. [Background technology]

[0002] Patent Document 1 discloses an interlock mechanism that stops the supply of power to a plasma processing space when an abnormality occurs in the plasma processing apparatus. [Prior art documents] [Patent documents]

[0003] [Patent Document 1] Japanese Patent Publication No. 2022-122425 Summary of the Invention [Problem to be solved by the invention]

[0004] The technology according to the present disclosure protects electronic devices mounted in a plasma processing apparatus when an interlock mechanism of the plasma processing apparatus is activated. [Means for solving the problem]

[0005] One aspect of the present disclosure is a plasma processing apparatus comprising: a plasma processing chamber; a base disposed within the plasma processing chamber and having a heat transfer medium flow path and a space; an electrostatic chuck disposed on the base; a first heater element disposed within the electrostatic chuck; a second heater element disposed within the space; a control circuit board disposed within the space, the control circuit board including at least one control element electrically connected to at least one of the first heater element and the second heater element; and a recovery circuit electrically connected between the second heater element and the at least one control element and configured to supply power to the second heater element based on a temperature within the space. [Effects of the Invention]

[0006] According to the present disclosure, electronic devices mounted in a plasma processing apparatus can be protected when an interlock mechanism of the plasma processing apparatus is activated. [Brief explanation of the drawings]

[0007] [Figure 1] FIG. 1 is a diagram illustrating an example of the configuration of a plasma processing system. [Figure 2] FIG. 1 is a diagram illustrating an example of the configuration of a capacitively coupled plasma processing apparatus. [Figure 3] 10 is a cross-sectional view for explaining an outline of a configuration example of a substrate support portion. FIG. [Figure 4] FIG. 2 is a diagram illustrating an example of the top surface of an electrostatic chuck. [Figure 5] FIG. 4 is a top view for explaining a configuration example of a first control circuit board. [Figure 6] FIG. 10 is a top view for explaining a configuration example of a second control circuit board. [Figure 7] FIG. 10 is a diagram for explaining a configuration example of a recovery circuit. [Figure 8A] FIG. 10 is a diagram for explaining the operation of the recovery circuit. [Figure 8B] FIG. 10 is a diagram for explaining the operation of the recovery circuit. [Figure 9A] FIG. 10 is a diagram for explaining the operation of the recovery circuit. [Figure 9B] FIG. 10 is a diagram for explaining the operation of the recovery circuit. [Figure 9C] FIG. 10 is a diagram for explaining the operation of the recovery circuit. [Figure 9D] FIG. 10 is a diagram for explaining the operation of the recovery circuit. [Figure 10] FIG. 10 is a diagram for explaining the effect of the recovery circuit. [Figure 11] FIG. 10 is a diagram illustrating a configuration of a modified example of a recovery circuit. [Figure 12] FIG. 10 is a diagram illustrating a configuration of a modified example of a recovery circuit. [Figure 13] FIG. 10 is a diagram illustrating a configuration of a modified example of a recovery circuit. [Figure 14] FIG. 10 is a diagram illustrating a configuration of a modified example of a recovery circuit. DETAILED DESCRIPTION OF THE INVENTION

[0008] The plasma processing apparatus and the substrate support unit according to the present embodiment will be described with reference to the drawings. In this specification and the drawings, elements having substantially the same functional configurations are designated by the same reference numerals, and redundant description will be omitted.

[0009] <Plasma processing system> A plasma processing system according to one embodiment will be described with reference to FIG.

[0010] FIG. 1 is a diagram illustrating an exemplary configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing device 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing device 1 is an example of a substrate processing device. The plasma processing device 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space 10s (see FIG. 2, described later). The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space 10s and at least one gas exhaust port for exhausting gas from the plasma processing space 10s. The gas supply port is connected to a gas supply unit 20, described later, and the gas exhaust port is connected to an exhaust system 40, described later. The substrate support 11 is disposed in the plasma processing space 10s and has a substrate support surface for supporting a substrate W (see FIG. 2, described later).

[0011] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space 10s. The plasma formed in the plasma processing space 10s may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), or surface wave plasma (SWP). Various types of plasma generating units may be used, including alternating current (AC) plasma generating units and direct current (DC) plasma generating units. In one embodiment, the AC signal (AC power) used in the AC plasma generating unit has a frequency in the range of 100 kHz to 10 GHz. Therefore, the AC signal includes a radio frequency (RF) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0012] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. The program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0013] The following describes a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 2 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0014] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0015] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0016] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a dielectric member 1111a and an attraction electrode layer (also referred to as an electrostatic electrode layer, a chuck electrode layer, or a clamp electrode layer) 1111b disposed within the dielectric member 1111a. The dielectric member 1111a has a central region 111a. In one embodiment, the dielectric member 1111a also has an annular region 111b. Note that another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member, may also have the annular region 111b. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF power supply 31 and / or a DC power supply 32, which will be described later, may be disposed within the dielectric member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal, which will be described later, is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Alternatively, the chucking electrode layer 1111b may function as a lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0017] In one embodiment, the base 1110 has a space, which will be described later. A first control circuit board and a second control circuit board, which will be described later, are disposed in the space. Power is supplied to the first control circuit board and the second control circuit board from a power supply 30, which will be described later. The space is controlled to a constant temperature by the second control circuit board to prevent the space from becoming too cold due to a heat transfer medium, which will be described later. The constant temperature is, for example, 100°C.

[0018] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0019] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a heat transfer medium passage 1110a, or a combination thereof. A heat transfer fluid such as brine or a gas flows through the heat transfer medium passage 1110a. In one embodiment, the heat transfer medium passage 1110a is formed in the base 1110, and one or more heaters are disposed in the dielectric member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the backside of the substrate W and the central region 111a.

[0020] The showerhead 13 is configured to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The processing gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas introduction unit may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0021] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0022] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, and ion components in the formed plasma can be attracted to the substrate W.

[0023] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0024] The second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit and configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generating unit 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0025] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0026] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof. In one embodiment, a waveform generator for generating a sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0027] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure regulating valve regulates the pressure in the plasma processing space 10s. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0028] The plasma processing apparatus 1 also includes an interlock mechanism (not shown). The interlock mechanism is a system that stops the supply of power to the plasma processing chamber 10 when any abnormal condition occurs in the plasma processing apparatus 1. An abnormal condition may be, for example, a temperature abnormality or a communication failure due to a broken wiring. When the interlock mechanism is activated, the supply of power from the power supply 30 to the second control circuit board described above is also stopped. Therefore, the space within the base 1110 described above is rapidly cooled by the heat transfer medium flowing through the heat transfer medium flow path.

[0029] <Substrate support part> The configuration of the substrate support 11 will be described with reference to Fig. 3. Fig. 3 is a cross-sectional view showing an outline of an example configuration of the substrate support 11 according to one embodiment. As described above, the main body 111 of the substrate support 11 includes the electrostatic chuck 1111 and the base 1110.

[0030] As described above, the electrostatic chuck 1111 includes the dielectric member 1111a. The dielectric member 1111a is formed in a substantially circular plate shape. The dielectric member 1111a is made of a ceramic material such as aluminum oxide or aluminum nitride. The dielectric member 1111a has the central region 111a and the annular region 111b described above. The dielectric member 1111a may be formed by thermal spraying of the ceramic material.

[0031] In one embodiment, the central region 111a has a diameter smaller than the diameter of the substrate W and is positioned higher than the annular region 111b. Thus, when the substrate W is supported on the central region 111a, a peripheral portion of the substrate W extends horizontally beyond the central region 111a.

[0032] In the example of Fig. 3, the upper surface of the integrally formed dielectric member 1111a has a central region 111a and an annular region 111b. Alternatively, the dielectric member 1111a may be divided into a central portion and an annular portion. In this case, the upper surface of the central portion has the central region 111a, and the upper surface of the annular portion has the annular region 111b. Furthermore, although the central portion and the annular portion are integrally formed in the example of Fig. 3, the central portion and the annular portion may also be formed as separate bodies.

[0033] The dielectric member 1111a includes an attraction electrode layer 1111b arranged below the central region 111a. Power is applied to the attraction electrode layer 1111b from an AC power supply or a DC power supply (not shown). The resulting electrostatic force attracts and holds the substrate W to the central region 111a. That is, the attraction electrode layer 1111b functions as an attraction electrode layer for the substrate W. In one embodiment, the attraction electrode layer 1111b is formed in a circular shape in a plan view. The attraction electrode layer 1111b may also have a plurality of electrode layer segments divided, for example, in the radial and / or circumferential directions. The dielectric member 1111a may also include an attraction electrode layer arranged below the annular region 111b. In this case, the attraction electrode layer arranged below the annular region 111b functions as an attraction electrode layer for the ring assembly (edge ​​ring) 112.

[0034] FIG. 4 is a diagram illustrating an example of the upper surface of the electrostatic chuck 1111. The central region 111a of the dielectric member 1111a of the electrostatic chuck 1111 is divided into a plurality of divided regions (also referred to as zones) 111ad, for example, as shown in FIG. 4. In FIG. 4, each divided region 111ad is indicated by a broken line. In each divided region 111ad, a heater electrode layer 1111c (first heater element) is disposed below the attraction electrode layer 1111b, as shown in FIG. 3. The heater electrode layer 1111c is, for example, a resistance heating heater. The heater electrode layer 1111c individually controls the temperature of each divided region 111ad of the central region 111a. This improves the temperature uniformity of the substrate W. In the examples of FIGS. 3 and 4, one heater electrode layer 1111c is disposed in each divided region 111ad, but this is not limiting. One heater electrode layer 1111c may be arranged for each of the divided regions 111ad. Alternatively, multiple heater electrode layers 1111c may be arranged in one divided region 111ad. In the examples of FIGS. 3 and 4, the annular region 111b is not divided into multiple divided regions, but the annular region 111b may be divided into multiple divided regions. In this case, a heater electrode layer 1111c may be arranged below the attraction electrode layer of the ring assembly (edge ​​ring) 112 for each of the multiple divided regions of the annular region 111b. That is, at least one heater electrode layer 1111c is arranged in the electrostatic chuck 1111. In one embodiment, the at least one heater electrode layer 1111c includes multiple heater electrode layers 1111c.

[0035] Within the dielectric member 1111a, a plurality of temperature sensors 1111d are disposed below each of the plurality of heater electrode layers 1111c. The plurality of temperature sensors 1111d detect the temperature of the heater electrode layer 1111c disposed above each of them as an electrical signal. The plurality of heater electrode layers 1111c are controlled by a first control circuit board 60 (described later) based on the outputs of the plurality of temperature sensors 1111d. Note that, in the example of FIG. 3, the temperature sensors 1111d are disposed below each of the heater electrode layers 1111c, but this is not limiting. The temperature sensors 1111d may be disposed above or to the side of the heater electrode layers 1111c as long as they are in the vicinity of each of the heater electrode layers 1111c. Alternatively, one temperature sensor 1111d may be disposed for each of the plurality of heater electrode layers 1111c.

[0036] A connector 802 is disposed on the lower surface of the dielectric member 1111a. A plurality of heater electrode layers 1111c disposed within the dielectric member 1111a are electrically connected to a first control circuit board 60 (described later) via wiring 90c within the dielectric member 1111a and the connector 802. A plurality of temperature sensors 1111d disposed within the dielectric member 1111a are electrically connected to a first control circuit board 60 (described later) via wiring 90d within the dielectric member 1111a and the connector 802.

[0037] The base 1110 is formed of a conductive material such as aluminum. The heat transfer medium flow path 1110a described above is formed in the base 1110. In one embodiment, the base 1110 and the electrostatic chuck 1111 are bonded together by, for example, an adhesive layer. The base 1110 has a space 50s therein that is different from the heat transfer medium flow path 1110a. The base 1110 includes a bottom plate 1110b that defines a portion of the space 50s. The bottom plate 1110b is detachably attached to the base 1110. By removing the bottom plate 1110b from the base 1110, a first control circuit board 60 and a second control circuit board 70 (described later) can be inserted into the space 50s. The bottom plate 1110b of the base 1110 has supply holes 1110c for supplying low-humidity gas into the space 50s. Supplying low-humidity gas into the space 50s through the supply holes 1110c can suppress condensation at low temperatures in the space 50s, thereby preventing malfunctions of electronic devices placed in the space 50s due to moisture. In this embodiment, the low-humidity gas is, for example, dry air. In the example of FIG. 3, the base 1110 is made of a conductive material, but this is not limited to this. It may also be made of a non-conductive material such as SiC (silicon carbide), AlN (aluminum nitride), or Al2O3 (alumina or aluminum oxide). The bottom plate 1110b may also be made of a non-conductive material.

[0038] A first control circuit board 60 is disposed in the space 50s of the base 1110. The first control circuit board 60 controls the heater electrode layer 1111c disposed in the dielectric member 1111a based on the output of the temperature sensor 1111d. The first control circuit board 60 includes a printed circuit board 60p. A plurality of element control devices (control elements) 602 and a connector 804 are mounted on the upper surface of the printed circuit board 60p. A connector 806 and a connector 810 are mounted on the lower surface of the printed circuit board 60p. The element control device 602 controls the temperature of the heater electrode layer 1111c. The element control device 602 processes an electrical signal from the temperature sensor 1111d and performs control to determine the temperature of the heater electrode layer 1111c. The element control device 602 can be, for example, an electronic circuit such as a CPU (Central Processing Unit) or an MPU (Micro Processing Unit), or an integrated circuit such as an ASIC (Application Specific Integrated Circuit) or an FPGA (Field Programmable Gate Array). Further, a ventilation through-hole 604 is formed in the printed circuit board 60p. Note that, although two element control devices 602 are mounted on the printed circuit board in the example of FIG. 3, this is not limiting. The number of element control devices 602 may be one or three or more depending on the number of heater electrode layers 1111c and temperature sensors 1111d to be controlled. That is, the first control circuit board 60 includes at least one element control device 602. One element control device 602 may control the temperature of the heater electrode layer 1111c and process electrical signals from the temperature sensors 1111d, or different element control devices 602 may control the temperature of the heater electrode layer 1111c and process electrical signals from the temperature sensors 1111d. Further, the ventilation through-hole 604 in the printed circuit board 60p may not be formed.

[0039] FIG. 5 is a top view illustrating an example configuration of the first control circuit board 60. In one embodiment, the space 50s within the base 1110 has a substantially cylindrical shape. The printed circuit board 60p has a diameter smaller than the diameter of the space 50s, forming a gap between the base 1110 and the printed circuit board 60p. In this embodiment, the space 50s and the printed circuit board 60p have a circular shape when viewed from above, but this is not limited to this. They may also have an elliptical or polygonal shape. The arrangement positions of the element control device 602, the connector 804, and the ventilation through-hole 604 are not limited to the form shown in FIG. 5.

[0040] The base 1110 has a plurality of through holes 1110d, and the cable wiring 902c and the cable wiring 902d extend vertically within the through holes 1110d. The heater electrode layer 1111c is electrically connected to the element control device 602 via the wiring 90c within the dielectric member 1111a, the connector 802 arranged on the lower surface of the dielectric member 1111a, the cable wiring 902c, the connector 804, and wiring on the surface or inner layer of the printed circuit board 60p. The temperature sensor 1111d is electrically connected to the element control device 602 via the wiring 90d within the dielectric member 1111a, the connector 802 arranged on the lower surface of the dielectric member 1111a, the cable wiring 902d, the connector 804, and wiring on the surface or inner layer of the printed circuit board 60p.

[0041] A connector 810 mounted on the underside of the printed circuit board 60p is arranged to supply power to the first control circuit board 60. The element control device 602 of the first control circuit board 60 is connected to the power supply 301 via wiring on the surface or inner layer of the printed circuit board 60p, the connector 810, a through-hole 706 formed in the printed circuit board 70p, and a wiring 910 that passes through a through-hole 1110e formed in the bottom plate 1110b of the base 1110. The power supply 301 may be included in the power supply 30 described above, or may be an external power supply other than the power supply 30. The element control device 602 of the first control circuit board 60 may be supplied with power from an external power supply other than the power supply 30.

[0042] A second control circuit board 70 that controls the temperature of the space 50s of the base 1110 is further disposed in the space 50s of the base 1110. The second control circuit board 70 includes a printed circuit board 70p. A recovery circuit 704, a heater element 702 (second heater element), and a connector 808 (described later) are mounted on the upper surface of the printed circuit board 70p. The heater element 702 is, for example, a resistance heating type heater. The heater element 702 is electrically connected to the element control device 602 via wiring on the surface or inner layer of the printed circuit board 70p, a connector 808, wiring 906, wiring 908, connector 806, and wiring on the surface or inner layer of the printed circuit board 60p. The wiring 906 is a power supply wiring for the recovery circuit (described later). The wiring 908 is a reference potential wiring for the recovery circuit (described later). The element control device 602 not only controls the temperature of the heater electrode layer 1111c and processes the electrical signal from the temperature sensor 1111d, but also controls the heater element 702 to control the temperature within the space 50s. The temperature within the space 50s is measured by a temperature sensor (not shown) disposed within the space 50s, and the element control device 602 controls the heater element 702 based on the temperature within the space 50s measured by the temperature sensor. Also, in the example of Fig. 3, a through hole 708 for ventilation is formed in the printed circuit board 70p, but the through hole 708 may be omitted.

[0043] FIG. 6 is a top view illustrating an example configuration of the second control circuit board. In one embodiment, the printed circuit board 70p has a diameter smaller than the diameter of the space 50s, forming a gap between the base 1110 and the printed circuit board 70p. The printed circuit board 70p also has approximately the same diameter as the printed circuit board 60p. In this embodiment, the printed circuit board 70p has a circular shape in a top view, but this is not limited thereto. The printed circuit board 70p may also have an elliptical or polygonal shape. The printed circuit board 70p may also have a different size or shape from the printed circuit board 60p. The positions of the recovery circuit 704, heater element 702, connector 808, and ventilation through-hole 708 are not limited to those shown in FIG. 6.

[0044] The printed circuit boards 60p and 70p are fixed to the bottom plate 1110b within the space 50s via spacers 502 and 504. Furthermore, the printed circuit boards 60p and 70p are spaced apart from each other within the space 50s.

[0045] 3, the recovery circuit 704 is mounted on the printed circuit board 70p of the second control circuit board 70, but this is not limiting. The recovery circuit 704 may also be mounted on the printed circuit board 60p of the first control circuit board 60. Alternatively, the recovery circuit 704 may be mounted on another printed circuit board separately provided within the space 50s.

[0046] 3, the second control circuit board 70 is arranged below the first control circuit board 60 in the space 50s of the base 1110, but this is not limiting. The second control circuit board 70 may be arranged above the first control circuit board 60. Furthermore, a plurality of second control circuit boards 70 may be arranged in the space 50s of the base 1110. In this case, the recovery circuit 704 may be provided in each second control circuit board 70.

[0047] <Recovery circuit> The configuration of the recovery circuit 704 will be described with reference to Fig. 7. Fig. 7 is a diagram for explaining an example of the configuration of the recovery circuit 704 according to an embodiment.

[0048] The recovery circuit 704 is disposed between the element control device 602 mounted on the printed circuit board 60p and the heater element 702 mounted on the printed circuit board 70p. The recovery circuit 704 is electrically connected to a power supply wiring 906b and a reference potential wiring 908b formed on a surface layer or an inner layer of the printed circuit board 70p. The power supply wiring 906b is provided to supply power from the element control device 602 of the first control circuit board 60 to the first circuit segment 704s1, the second circuit segment 704s2, and the third circuit segment 704s3 of the recovery circuit 704. The reference potential wiring 908b is provided to determine a reference potential for each element of the recovery circuit 704. The reference potential is, for example, a ground potential. The power supply wiring 906b is electrically connected to the power supply wiring 906 described above via a connector 808. The power supply wiring 906 is electrically connected to the element controlling device 602 via the connector 806 and a power supply wiring 906a formed on a surface layer or an inner layer of the printed circuit board 60p. Similarly, the reference potential wiring 908b is electrically connected to the reference potential wiring 908 described above via the connector 808. The reference potential wiring 908 is electrically connected to the element controlling device 602 via the connector 806 and a reference potential wiring 908a formed on a surface layer or an inner layer of the printed circuit board 60p. In the example of FIG. 7, power is supplied from the element controlling device 602 to the first circuit segment 704s1, the second circuit segment 704s2, and the third circuit segment 704s3 of the recovery circuit 704, but the present invention is not limited to this. Another control device (second control element) may be implemented on the printed circuit board 60p or the printed circuit board 70p and configured to supply power from the other control device to the first circuit segment 704s1, the second circuit segment 704s2, and the third circuit segment 704s3 of the recovery circuit 704.

[0049] The recovery circuit 704 is electrically connected to the heater element 702 via a power supply wiring 906g and a reference potential wiring 908b.

[0050] The recovery circuit 704 is electrically connected between at least one element control device 602 and at least one heater element 702 and includes multiple circuit segments connected in parallel. The multiple circuit segments include a first circuit segment 704s1, a second circuit segment 704s2, and a third circuit segment 704s3. Therefore, the first circuit segment 704s1, the second circuit segment 704s2, and the third circuit segment 704s3 are electrically connected in parallel. The first circuit segment 704s1 includes a first switch element SW1, a first capacitor C1, and a first diode D5. The first capacitor C1 is an example of a first storage element. The first diode D5 is an example of a first parallel rectifier element. The first capacitor C1 is connected in series with the first switch element SW1. The first diode D5 is also connected in parallel with the first switch element SW1. The second circuit segment 704s2 includes a second switch element SW2, a second capacitor C2, and a second diode D6. The second capacitor C2 is an example of a second storage element. The second diode D6 is an example of a second parallel rectifier element. The second capacitor C2 is connected in series with the second switch element SW2. The second diode D6 is connected in parallel with the second switch element SW2. The third circuit segment 704s3 includes a third switch element SW3, a third capacitor C3, and a third diode D7. The third capacitor C3 is an example of a third storage element. The third diode D7 is an example of a third parallel rectifier element. The third capacitor C3 is connected in series with the third switch element SW3. The third diode D7 is connected in parallel with the third switch element SW3. In the example of FIG. 7, three circuit segments 704s1, 704s2, and 704s3 are connected in parallel, but this is not limiting. For example, it is sufficient that at least one circuit segment is provided. In one embodiment, four or more circuit segments connected in parallel may be provided. Furthermore, the first to third storage elements are capacitors, but this is not limiting. The first to third storage elements may also be board-mounted batteries.Furthermore, the first to third parallel rectifier elements are diodes, but are not limited to this. The first to third parallel rectifier elements may be thyristors. Furthermore, although the first diode D5, the second diode D6, and the third diode D7 are provided, at least one of the diodes may not be provided.

[0051] The first switch element SW1, the second switch element SW2, and the third switch element SW3 are configured to perform switching operations based on the temperature in the space 50s, and are, for example, bimetal thermostats or reed switches. The first switch element SW1, the second switch element SW2, and the third switch element SW3 are configured to turn off (open; non-conductive) at different temperatures. In the example of FIG. 7 , the first switch element SW1 is configured to turn off (open; non-conductive) when the temperature exceeds a first temperature, the second switch element SW2 is configured to turn off (open; non-conductive) when the temperature exceeds a second temperature, and the third switch element SW3 is configured to turn on (closed; non-conductive) when the temperature exceeds a third temperature. In one embodiment, the first temperature is higher than the second temperature, and the second temperature is higher than the third temperature. In one embodiment, the first temperature is 95°C to 85°C, the second temperature is 85°C to 75°C, and the third temperature is 75°C to 65°C. In another embodiment, the first temperature is lower than the second temperature, and the second temperature is lower than the third temperature. In another embodiment, the first temperature is 75°C to 65°C, the second temperature is 85°C to 75°C, and the third temperature is 95°C to 85°C. When a bimetal thermostat is used, the first, second, and third temperatures are set by adjusting the material and shape of the bimetal. When a reed switch is used, the first, second, and third temperatures are set by adjusting the compounding ratio of the soft magnetic material in the switch to adjust the Curie temperature.

[0052] 7, a capacitor C0 is electrically connected in parallel to the first circuit segment 704s1, the second circuit segment 704s2, and the third circuit segment 704s3 between the power supply wiring 906b and the reference potential wiring 908b. The capacitor C0 is an example of an additional power storage element. Note that a board-mounted battery may be used as the additional power storage element instead of the capacitor C0.

[0053] The recovery circuit 704 includes a diode D0 connected between the power supply wiring 906b and the power supply wiring 906c. Therefore, the diode D0 is connected between the element control device 602 and the input terminal of the capacitor C0. The diode D0 is a rectifying element for preventing reverse current flow and is an example of a first series rectifying element. Similarly, the recovery circuit 704 includes diodes D1, D2, D3, and D4. The diode D1 is connected between the power supply wiring 906c and the power supply wiring 906d. Therefore, the diode D1 is connected between the input terminal of the capacitor C0 and the input terminal of the first circuit segment 704s1. The diode D1 is an example of a second series rectifying element. The diode D2 is connected between the power supply wiring 906d and the power supply wiring 906e. Therefore, the diode D2 is connected between the input terminal of the first circuit segment 704s1 and the input terminal of the second circuit segment 704s2. Diode D2 is an example of a third series rectifier element. Diode D3 is connected between the power supply wiring 906e and the power supply wiring 906f. Therefore, diode D3 is connected between the input terminal of the second circuit segment 704s2 and the input terminal of the third circuit segment 704s3. Diode D3 is an example of a fourth series rectifier element. Diode D4 is connected between the power supply wiring 906f and the power supply wiring 906g. Therefore, diode D4 is connected between the input terminal of the third circuit segment 704s3 and the input terminal of the heater element 702. Diode D4 is an example of a fifth series rectifier element. Note that in the example of FIG. 7, the first to fifth series rectifier elements are diodes, but this is not limiting. The first to fifth series rectifier elements may also be thyristors. Furthermore, in the example of FIG. 7, five diodes D0, D1, D2, D3, and D4 are provided, but at least one of these diodes may not be provided.

[0054] <Recovery circuit operation> First, the operation of the recovery circuit 704 during normal operation of the plasma processing apparatus 1 will be described with reference to FIGS. 8A and 8B.

[0055] When the plasma processing apparatus 1 is initially powered on, the temperature of the space 50s of the base 1110 is room temperature. The room temperature is, for example, 20°C to 30°C. In the initial state, as shown in FIG. 8A, the first switch element SW1, the second switch element SW2, and the third switch element SW3 are all in the ON state. Therefore, the capacitor C0 is fully charged by a current flowing from the element control device 602 via the power supply wiring 906b and the diode D0. The first capacitor C1 is fully charged by a current flowing from the element control device 602 via the power supply wiring 906b, the diode D0, the diode D1, and the first switch element SW1. The second capacitor C2 is fully charged by a current flowing from the element control device 602 via the power supply wiring 906b, the diode D0, the diode D1, the diode D2, and the second switch element SW2. The third capacitor C3 is fully charged by current flowing from the element control device 602 via the power supply line 906b, diodes D0, D1, D2, and D3, and the third switch element SW3. Note that if the capacitance of the first capacitor C1 is large, it takes a longer time to fully charge, and the first switch element SW1 may turn off before the first capacitor C1 is fully charged. In this case, the first capacitor C1 is fully charged by current flowing from the element control device 602 via the forward-biased first diode D5. Similarly, if the capacitance of the second capacitor C2 is large, the second capacitor C2 is fully charged by current flowing from the element control device 602 via the forward-biased second diode D6. If the capacitance of the third capacitor C3 is large, the third capacitor C3 is fully charged by current flowing from the element control device 602 via the forward-biased third diode D7.

[0056] FIG. 8B illustrates the steady state of the recovery circuit 704 according to one embodiment. In the steady state, the first switch element SW1, the second switch element SW2, and the third switch element SW3 are all in the off state. The transition from the initial state illustrated in FIG. 8A to the steady state illustrated in FIG. 8B is as follows: After the initial state in which the plasma processing apparatus 1 is powered on, the temperature of the space 50s gradually increases due to the heater element 702 of the second control circuit board 70 disposed in the space 50s. When the temperature of the space 50s reaches a third temperature (e.g., 70°C), the third switch element SW3 turns off. Thereafter, when the temperature of the space 50s reaches a second temperature (e.g., 80°C), the second switch element SW2 turns off. When the temperature of the space 50s reaches a first temperature (e.g., 90°C), the third switch element SW3 turns off, thereby achieving the steady state illustrated in FIG. 8B.

[0057] Next, the operation of recovery circuit 704 when the interlock mechanism of plasma processing apparatus 1 is activated will be described with reference to FIGS. 9A to 9D.

[0058] FIG. 9A illustrates the operation of the recovery circuit 704 immediately after the interlock mechanism is activated. In this embodiment, the temperature in the space 50s in the steady state shown in FIG. 8B before the interlock mechanism is activated is assumed to be 100°C. When the interlock mechanism is activated, power supply to the first control circuit board 60 is stopped, and power supply from the element control device 602 to the heater element 702 is also stopped. When power supply from the element control device 602 to the heater element 702 is stopped, the stored charge from the fully charged capacitor C0 is first supplied to the heater element 702 as a current I0 via diodes D1, D2, D3, and D4. This allows power supply to the heater element 702 to continue even when the interlock mechanism is activated and control of the element control device 602 is stopped. This prevents or delays the space 50s in the base 1110 from rapidly cooling, making it possible to maintain the recommended operating temperature of electronic devices placed in the space 50s.

[0059] After the interlock mechanism is activated, when a current I0 is supplied from capacitor C0 to heater element 702, if the temperature in space 50s drops to a first temperature (e.g., 90°C), first switch element SW1 turns on, as shown in FIG. 9B . When first switch element SW1 turns on, the fully charged first capacitor C1 supplies stored charge as current I1 to heater element 702 via diodes D2, D3, and D4. This allows power to continue to be supplied to heater element 702 not only from capacitor C0 but also from first capacitor C1. This prevents or delays the space 50s in base 1110 from rapidly cooling, making it possible to maintain the space 50s within the recommended operating temperature range for electronic devices placed in the space 50s. In the example of FIG. 9B, only the current I1 from the first capacitor C1 is supplied to the heater element 702, but depending on the capacitances of the capacitor C0 and the first capacitor C1, the current I1 from the first capacitor C1 and the current I0 from the capacitor C0 may be supplied to the heater element 702 simultaneously.

[0060] Furthermore, when the temperature inside the space 50s drops to a second temperature (e.g., 80°C), the second switch element SW2 turns on, as shown in FIG. 9C. When the second switch element SW2 turns on, the charge stored in the fully charged second capacitor C2 is supplied to the heater element 702 as a current I2 via diodes D3 and D4. This allows power to be continuously supplied to the heater element 702 not only from the capacitor C0 and the first capacitor C1 but also from the second capacitor C2. This makes it possible to prevent or delay the space 50s inside the base 1110 from rapidly becoming cold, and to maintain the recommended ambient temperature for use of electronic devices placed inside the space 50s. 9C, only the current I2 from the second capacitor C2 is supplied to the heater element 702, but depending on the capacitances of the capacitor C0, the first capacitor C1, and the second capacitor C2, the current I2 from the second capacitor C2 and the current I1 from the first capacitor C1 may be supplied to the heater element 702 simultaneously, or the current I2 from the second capacitor C2 and the current I0 from the capacitor C0 may be supplied to the heater element 702 simultaneously. Also, the current I2 from the second capacitor C2, the current I0 from the capacitor C0, and the current I1 from the first capacitor C1 may be supplied to the heater element 702 simultaneously.

[0061] Furthermore, when the temperature inside the space 50s drops to a third temperature (e.g., 70°C), the third switch element SW3 turns on, as shown in FIG. 9D. When the third switch element SW3 turns on, the electric charge stored in the fully charged third capacitor C3 is supplied to the heater element 702 as a current I3 via the diode D4. This allows power to be continuously supplied to the heater element 702 not only from the capacitor C0, the first capacitor C1, and the second capacitor C2 but also from the third capacitor C3. This makes it possible to prevent or delay the space 50s inside the base 1110 from rapidly becoming cold, and to maintain the recommended ambient temperature for use of electronic devices placed inside the space 50s. 9D, only the current I3 from the third capacitor C3 is supplied to the heater element 702, but depending on the capacitances of the capacitor C0, the first capacitor C1, the second capacitor C2, and the third capacitor C3, the current I3 from the third capacitor C3 and the current I2 from the second capacitor C2 may be supplied to the heater element 702 simultaneously, the current I3 from the third capacitor C3 and the current I1 from the first capacitor C1 may be supplied to the heater element 702 simultaneously, or the current I3 from the third capacitor C3 and the current I0 from the capacitor C0 may be supplied to the heater element 702 simultaneously. Also, the current I3 from the third capacitor C3 and the current I0 from the capacitor C0, the current I1 from the first capacitor C1, and the current I2 from the second capacitor C2 may be supplied to the heater element 702 simultaneously. 9A to 9D, the first switch element SW1 of the first circuit segment 704s1 is configured to turn off at a first temperature (e.g., 90°C), the second switch element SW2 of the second circuit segment 704s2 at a second temperature (e.g., 80°C), and the third switch element SW3 of the third circuit segment 704s3 at a third temperature (e.g., 70°C), but this is not limiting. The first switch element SW1, the second switch element SW2, and the third switch element SW3 may be configured to turn on at different temperatures. Furthermore, four or more circuit segments may be provided and a current may be supplied to the heater element 702 with more precise temperature settings.

[0062] FIG. 10 is a diagram for explaining the effect of the recovery circuit. FIG. 10 is a diagram showing the temperature change in the space 50s in the base 1110 when the recovery circuit 704 operates after the interlock mechanism of the plasma processing apparatus 1 operates. The horizontal axis represents time, and the vertical axis represents temperature. Temperature Ts represents the temperature in the steady state before the interlock mechanism operates. Temperature Ts is, for example, 100°C. Temperature Te represents the temperature at which the temperature of the heat transfer medium in the heat transfer medium flow path 1110a is stable in the steady state after the interlock mechanism operates. Temperature Te is, for example, room temperature. Temperature Tt represents the lower limit of the recommended ambient temperature for use of electronic devices placed in the space 50s.

[0063] As a comparative example, graph Ref shows the temperature change of the space 50s within the base 1110 of a plasma processing apparatus 1 not provided with a recovery circuit 704. In this comparative example, when the interlock mechanism of the plasma processing apparatus 1 is activated, the power supply from the power supply 30 to the element control device 602 is also stopped. Accordingly, power supply to the heater element 702 is also stopped. As a result, the space 50s within the base 1110 is rapidly cooled by the heat transfer medium flowing through the heat transfer medium flow path 1110a. In this case, as shown by the lowest temperature Tb in graph Ref of FIG. 10, the temperature of the space 50s falls below temperature Tt, which is the lower limit of the recommended ambient temperature for the electronic device. Therefore, the recommended ambient temperature for the electronic device cannot be maintained, and the electronic device may not operate normally.

[0064] Graph Temp shows the temperature change of the space 50s within the base 1110 of the plasma processing apparatus 1 equipped with the recovery circuit 704 of this embodiment. In this embodiment, when the interlock mechanism of the plasma processing apparatus 1 is activated, even if the power supply from the power supply 30 to the element control device 602 is stopped, power supply to the heater element 702 continues by current supplied from at least one of the capacitors C0, C1, C2, and C3. This prevents or delays the space 50s within the base 1110 from rapidly becoming cold, as indicated by the lowest temperature Tb' of graph Temp, and prevents the temperature of the space 50s from falling below the temperature Tt, which is the lower limit of the recommended operating temperature for electronic devices. This protects the electronic devices placed within the space 50s and allows them to maintain normal operation.

[0065] <First Modification> A first modified example of the configuration of the recovery circuit 704 will be described with reference to Fig. 11. Fig. 11 is a diagram for explaining a configuration example of a recovery circuit 704x according to the first modified example. Note that, in the first modified example, elements having substantially the same functional configuration as those in the above-described embodiment are assigned the same reference numerals, and redundant description will be omitted.

[0066] In the first modification, the recovery circuit 704x includes capacitors C01, C11, C21, and C31 connected in parallel to capacitors C0, C1, C2, and C3, respectively. Capacitor C01 is an example of an additional storage element. Capacitor C11 is an example of a first storage element. Capacitor C21 is an example of a second storage element. Capacitor C31 is an example of a third storage element. The capacitances of capacitors C0 and C01 may be the same or different. Similarly, the capacitances of capacitors C1 and C11 may be the same or different. The capacitances of capacitors C2 and C21 may be the same or different. Furthermore, the capacitances of capacitors C3 and C31 may be the same or different. This allows for a larger charge to be stored, thereby preventing or delaying the space 50s in the base 1110 from rapidly becoming cold. Moreover, it becomes possible to individually adjust the current supplied to each of the circuit segments 704s1, 704s2, and 704s3.

[0067] <Second Modification> A second modified example of the configuration of the recovery circuit 704 will be described with reference to Fig. 12. Fig. 12 is a diagram for explaining a configuration example of a recovery circuit 704y according to the second modified example. Note that in the second modified example, elements having substantially the same functional configuration as those in the above-described embodiment are assigned the same reference numerals, and redundant description will be omitted.

[0068] In the second modification, the recovery circuit 704 includes capacitors C02, C12, C22, and C32 connected in series with capacitors C0, C1, C2, and C3, respectively. Capacitor C02 is an example of an additional storage element. Capacitor C12 is an example of a first storage element. Capacitor C22 is an example of a second storage element. Capacitor C32 is an example of a third storage element. Capacitor C0 and capacitor C02 may have the same capacitance or different capacitances. Similarly, capacitors C1 and C12 may have the same capacitance or different capacitances. Capacitor C2 and capacitor C22 may have the same capacitance or different capacitances. Furthermore, capacitors C3 and C32 may have the same capacitance or different capacitances. This reduces the voltage applied to each capacitor, ensuring the withstand voltage of the capacitors and reducing the burden on the capacitors. Moreover, it becomes possible to individually adjust the current supplied to each of the circuit segments 704s1, 704s2, and 704s3.

[0069] <Third Modification> A third modified example of the configuration of the recovery circuit 704 will be described with reference to Fig. 13. Fig. 13 is a diagram for explaining a configuration example of recovery circuits 704z1 and 704z2 according to the third modified example. Note that, in the third modified example, elements having substantially the same functional configuration as those in the above-described embodiment are assigned the same reference numerals, and redundant description will be omitted.

[0070] In the third modified example, the capacitance of at least one capacitor constituting the recovery circuits 704z1 and 704z2 differs for each arrangement region of the heater elements 702z1 and 702z2 within the space 50s of the base 1110. That is, the capacitance of at least one capacitor in the recovery circuit 704z2 differs from the capacitance of the corresponding capacitor in the recovery circuit 704z1.

[0071] 13, a specific region in the space 50s of the base 1110 where the heater element 702z1 is disposed is designated as zone 1, and a different region where the heater element 702z2 is disposed is designated as zone 2. The recovery circuit 704z1 of the heater element 702z1 included in zone 1 includes capacitors C0, C1, C2, and C3. On the other hand, the recovery circuit 704z2 of the heater element 702z2 included in zone 2 includes capacitors C03, C13, C23, and C33. The capacitors C0, C1, C2, and C3 in the recovery circuit 704z1 correspond to the capacitors C03, C13, C23, and C33 in the recovery circuit 704z2, respectively. In the third modification, at least one of the capacitances of capacitors C0 and C03, capacitors C1 and C13, capacitors C2 and C23, and capacitors C3 and C33 is different from one another. That is, the capacitance of at least one of capacitors C03, C13, C23, and C33 in the recovery circuit 704z2 is different from the capacitance of the corresponding capacitor among capacitors C0, C1, C2, and C3 in the recovery circuit 704z1. For example, the capacitance of capacitor C03 in the recovery circuit 704z2 may be different from the capacitance of the corresponding capacitor C0 in the recovery circuit 704z1. This allows for precise adjustment of the amount of power supplied to the heater element 702 in the space 50s for each zone where the temperature distribution is uneven, even if the interlock mechanism is activated and the temperature distribution is uneven within the space 50s of the base 1110.

[0072] <Fourth Modification> A fourth modified example of the configuration of the recovery circuit 704 will be described with reference to Fig. 14. Fig. 14 is a diagram for explaining an example configuration of the recovery circuit 704 according to the fourth modified example. Note that in the fourth modified example, elements having substantially the same functional configuration as those in the above-described embodiment are assigned the same reference numerals, and redundant description will be omitted.

[0073] In the fourth modification, the switch element of the recovery circuit 704 is composed of a MOSFET (metal-oxide semiconductor field-effect transistor) 7041. The gate terminal of the MOSFET 7041 is connected to a gate control circuit 7042. The gate control circuit 7042 may be, for example, an electronic circuit such as a CPU (central processing unit) or an MPU (micro processing unit), or an integrated circuit such as an ASIC (application-specific integrated circuit) or an FPGA (field-programmable gate array). The gate control circuit 7042 controls the voltage applied to the gate terminal of the MOSFET 7041 in accordance with the temperature measured by a temperature sensor (not shown) disposed in the space 50s, thereby controlling the on / off of the MOSFET 7041. The gate control circuit 7042 may be disposed on the first control circuit substrate 60 or the second control circuit substrate 70. Although the MOSFET 7041 is disposed in the example of FIG. 14, this is not limiting. Other semiconductor switches may also be disposed.

[0074] In the fourth variant, the recovery circuit 704 may be arranged outside the space 50s to control the voltage applied to the gate terminal of the MOSFET 7041 in accordance with the temperature measured by a temperature sensor (not shown) arranged in the space 50s.

[0075] Although various exemplary embodiments have been described above, the present invention is not limited to the above-described exemplary embodiments, and various additions, omissions, substitutions, and modifications may be made. Furthermore, elements in the above-described exemplary embodiments and their modifications may be combined to form other embodiments.

[0076] Various exemplary embodiments included in the present disclosure are described below in (Supplementary Note 1) to (Supplementary Note 19).

[0077] (Appendix 1) a plasma processing chamber; a base disposed within the plasma processing chamber and having a heat transfer medium flow path and a space; an electrostatic chuck disposed on the base; at least one first heater element disposed within the electrostatic chuck; a first control circuit board disposed within the space, the first control circuit board including at least one control element electrically connected to the at least one first heater element; a second control circuit board disposed within the space, the second control circuit board including at least one second heater element electrically connected to at least one of the control elements; a recovery circuit electrically connected between at least one of the control elements and at least one of the second heater elements, the recovery circuit including a plurality of circuit segments connected in parallel, a first circuit segment of the plurality of circuit segments including at least one first storage element and a first switch element connected in series, the first switch element configured to perform a switching operation based on a temperature in the space; Plasma processing equipment. (Appendix 2) The first circuit segment comprises: a first parallel rectifying element connected in parallel with the first switch element; 2. The plasma processing apparatus according to claim 1. (Appendix 3) The recovery circuit at least one additional storage element connected in parallel with the first circuit segment; 3. The plasma processing apparatus according to claim 1 or 2. (Appendix 4) the plurality of circuit segments includes a second circuit segment connected in parallel with the first circuit segment; the second circuit segment includes at least one second storage element and a second switch element connected in series; 4. The plasma processing apparatus according to any one of claims 1 to 3. (Appendix 5) The recovery circuit a first series rectifier element connected between at least one of the control elements and the input of the additional storage element; a second series rectifying element connected between the input of the additional storage element and the input of the first circuit segment; a third series rectifying element connected between the input of the first circuit segment and the input of the second circuit segment; 5. The plasma processing apparatus according to claim 3 or 4. (Appendix 6) The at least one first storage element includes a plurality of first storage elements connected in parallel. 6. The plasma processing apparatus according to any one of claims 1 to 5. (Appendix 7) The at least one first storage element includes a plurality of first storage elements connected in series. 6. The plasma processing apparatus according to any one of claims 1 to 5. (Appendix 8) the at least one additional storage element includes a plurality of additional storage elements connected in parallel; 4. The plasma processing apparatus according to claim 3. (Appendix 9) the at least one additional storage element includes a plurality of additional storage elements connected in series; 8. The plasma processing apparatus according to any one of claims 3 to 7. (Appendix 10) The first switch element is a thermostat or a reed switch. 8. The plasma processing apparatus according to any one of claims 3 to 7. (Appendix 11) at least one of the first storage element and the at least one of the additional storage element is a capacitor; 11. The plasma processing apparatus according to any one of claims 3 to 10. (Appendix 12) a plasma processing chamber; a base disposed within the plasma processing chamber and having a heat transfer medium flow path and a space; an electrostatic chuck disposed on the base; a first heater element disposed within the electrostatic chuck; a second heater element disposed within the space; a control circuit board disposed in the space, the control circuit board including at least one control element electrically connected to at least one of the first heater element and the second heater element; a recovery circuit electrically connected between the second heater element and at least one of the control elements and configured to provide power to the second heater element based on a temperature in the space. Plasma processing equipment. (Appendix 13) The recovery circuit a first circuit segment having a first storage element and a first switch element connected in series; The first switch element is configured to perform a switching operation based on a temperature in the space. 13. The plasma processing apparatus according to claim 12. (Appendix 14) The recovery circuit a plurality of circuit segments connected in parallel; the plurality of circuit segments includes a first circuit segment having a first storage element and a first switch element connected in series; The first switch element is configured to perform a switching operation based on a temperature in the space. 14. The plasma processing apparatus according to claim 12 or 13. (Appendix 15) The first circuit segment comprises: a first parallel rectifying element connected in parallel with the first switch element; 15. The plasma processing apparatus according to claim 13 or 14. (Appendix 16) the plurality of circuit segments includes a second circuit segment connected in parallel with the first circuit segment; the second circuit segment includes at least one second storage element and a second switch element connected in series; 16. The plasma processing apparatus according to any one of claims 13 to 15. (Appendix 17) The recovery circuit further comprising an additional storage element connected in parallel with the first circuit segment. 17. The plasma processing apparatus according to any one of claims 13 to 16. (Appendix 18) The first switch element is a thermostat or a reed switch. 18. The plasma processing apparatus according to any one of claims 13 to 17. (Appendix 19) the first storage element and the additional storage element are capacitors; 19. The plasma processing apparatus according to any one of claims 13 to 18.

[0078] This application claims priority to U.S. Patent Application No. 63 / 268,004, filed February 15, 2022, the entire contents of which are incorporated herein by reference. This application also claims priority to Japanese Patent Application No. 2023-6578, filed January 19, 2023, the entire contents of which are incorporated herein by reference. [Explanation of symbols]

[0079] W substrate 1. Plasma processing equipment 10 Plasma Processing Chamber 11 Substrate support 111 Main body 111a Central area 111b Annular Region 112 Ring Assembly 1110 Foundation 1111 Electrostatic chuck 1111a Ceramic materials 20 Gas supply unit 30 power supply 40 Exhaust System 50s space 60 First control circuit board 602 Element Control Device 70 Second control circuit board 702 Heater element 704 Recovery Circuit 704s1 First Circuit Segment 704s2 Second Circuit Segment 704s3 Third Circuit Segment

Claims

1. a plasma processing chamber; a base disposed within the plasma processing chamber and having a heat transfer medium flow path and a space; an electrostatic chuck disposed on the base; at least one first heater element disposed within the electrostatic chuck; a first control circuit board disposed within the space, the first control circuit board including at least one control element electrically connected to the at least one first heater element; a second control circuit board disposed within the space, the second control circuit board including at least one second heater element electrically connected to at least one of the control elements; a recovery circuit electrically connected between the at least one control element and the at least one second heater element, the recovery circuit including a plurality of circuit segments connected in parallel, a first circuit segment of the plurality of circuit segments including at least one first storage element and a first switch element connected in series, the first switch element configured to perform a switching operation based on a temperature in the space; Plasma processing equipment.

2. The first circuit segment comprises: a first parallel rectifying element connected in parallel with the first switch element; The plasma processing apparatus according to claim 1 .

3. The recovery circuit at least one additional storage element connected in parallel with the first circuit segment; 3. The plasma processing apparatus according to claim 1 or 2.

4. the plurality of circuit segments includes a second circuit segment connected in parallel with the first circuit segment; the second circuit segment includes at least one second storage element and a second switch element connected in series; The plasma processing apparatus according to claim 3 .

5. The recovery circuit a first series rectifier element connected between the at least one control element and the input of the additional storage element; a second series rectifying element connected between the input of the additional storage element and the input of the first circuit segment; a third series rectifying element connected between the input of the first circuit segment and the input of the second circuit segment; The plasma processing apparatus according to claim 4 .

6. The at least one first storage element includes a plurality of first storage elements connected in parallel. The plasma processing apparatus according to claim 2 .

7. The at least one first storage element includes a plurality of first storage elements connected in series. The plasma processing apparatus according to claim 2 .

8. the at least one additional storage element includes a plurality of additional storage elements connected in parallel; The plasma processing apparatus according to claim 3 .

9. the at least one additional storage element includes a plurality of additional storage elements connected in series; The plasma processing apparatus according to claim 3 .

10. the first switch element is a thermostat or a reed switch; The plasma processing apparatus according to claim 2 .

11. at least one of the first storage element and the at least one of the additional storage element is a capacitor; The plasma processing apparatus according to claim 3 .

12. a plasma processing chamber; a base disposed within the plasma processing chamber and having a heat transfer medium flow path and a space; an electrostatic chuck disposed on the base; a first heater element disposed within the electrostatic chuck; a second heater element disposed within the space; a control circuit board disposed in the space, the control circuit board including at least one control element electrically connected to at least one of the first heater element and the second heater element; a recovery circuit electrically connected between the second heater element and the at least one control element and configured to provide power to the second heater element based on a temperature in the space; The recovery circuit a first circuit segment having a first storage element and a first switch element connected in series; the first switch element is configured to perform a switching operation based on a temperature in the space; Plasma processing equipment.

13. The recovery circuit a plurality of circuit segments connected in parallel; the plurality of circuit segments includes the first circuit segment having the first storage element and the first switch element connected in series; the first switch element is configured to perform a switching operation based on a temperature in the space; The plasma processing apparatus according to claim 12 .

14. The first circuit segment comprises: a first parallel rectifying element connected in parallel with the first switch element; The plasma processing apparatus according to claim 13 .

15. the plurality of circuit segments includes a second circuit segment connected in parallel with the first circuit segment; the second circuit segment includes at least one second storage element and a second switch element connected in series; The plasma processing apparatus according to claim 14 .

16. The recovery circuit further comprising an additional storage element connected in parallel with the first circuit segment. The plasma processing apparatus according to claim 13 .

17. the first switch element is a thermostat or a reed switch; The plasma processing apparatus according to claim 12 .

18. the first storage element and the additional storage element are capacitors; The plasma processing apparatus according to claim 16.

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