Indication device

Abstract

To provide a liquid crystal display device the numerical aperture of which is high.SOLUTION: The display device includes a first conductive layer, a second conductive layer, and a liquid crystal element having a liquid crystal layer provided between a third conductive layer and a fourth conductive layer, the first to fourth conductive layers having light transmissivity to visible light and each including a mutually overlapping region. The second conductive layer is provided between the first conductive layer and third conductive layer. An insulating layer is provided each of between the first conductive layer and the second conductive layer and between the second conductive layer and the third conductive layer. This results in a structure in which two capacitive elements are laminated having the second conductive layer as an electrode. These two capacitive elements have light transmissivity and are of such a structure in which liquid crystal elements overlap, which makes it possible to increase an aperture ratio.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] One embodiment of the present invention relates to a liquid crystal display device and an electronic device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. Examples of the semiconductor device include a semiconductor device, a display device, a light-emitting device, a power storage device, a memory device, an electronic device, a lighting device, Input devices (e.g., touch sensors), input / output devices (e.g., touch panels), etc. These driving methods or manufacturing methods can be cited as examples. [Background technology]

[0003] In recent years, metal oxides that exhibit semiconducting properties have been used in transistors instead of silicon semiconductors. For example, Patent Documents 1 and 2 disclose the following metal oxides: A transistor using zinc oxide or In-Ga-Zn oxide is fabricated. A technique for using a transistor as a switching element for a pixel of a display device has been disclosed. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2007-123861 [Patent Document 2] Japanese Patent Application Laid-Open No. 2007-96055 Summary of the Invention [Problem to be solved by the invention]

[0005] Display devices using liquid crystal elements or light-emitting elements can be made more efficient by increasing the number of pixels per unit area. In the case of an active display element, the pixel contains a display element. In addition to the elements, it is necessary to provide transistors, capacitance elements, wiring, etc.

[0006] As the number of pixels per unit area increases, the proportion of components that do not transmit light increases. The area becomes relatively large. In other words, the aperture ratio decreases. Therefore, the transmissive liquid crystal element In order to display clear images, the intensity of the backlight must be increased. The power consumption increases.

[0007] Furthermore, when the pixel area becomes very small, the horizontal electric field mode, in which comb-shaped electrodes are arranged horizontally, becomes difficult to use. Liquid crystal elements are difficult to design and it is also difficult to increase the manufacturing yield.

[0008] Therefore, one object of one embodiment of the present invention is to provide a liquid crystal display device with a high aperture ratio. Another object is to provide a liquid crystal display device with low power consumption. One of the objects of the present invention is to provide a highly accurate liquid crystal display device. One of the objects of the present invention is to provide a liquid crystal display device.

[0009] Note that the description of these problems does not preclude the existence of other problems. It is not necessary to solve all of these problems. From the description of the section, it is possible to extract other issues. [Means for solving the problem]

[0010] One embodiment of the present invention is a liquid crystal display device provided with a capacitor element that transmits visible light. Regarding.

[0011] One embodiment of the present invention is a display device including a first conductive layer, a second conductive layer, and a liquid crystal element. The first conductive layer is a region where a source electrode or a drain electrode of a transistor extends. the liquid crystal element has a third conductive layer, a liquid crystal layer, and a fourth conductive layer, and the liquid crystal layer is The first to fourth conductive layers are provided between the first conductive layer and the fourth conductive layer, and the first to fourth conductive layers are transparent to visible light. The first to fourth conductive layers have overlapping regions, and the second conductive layer is provided between the first conductive layer and the third conductive layer, and between the first conductive layer and the second conductive layer a first insulating layer is provided between the second conductive layer and the third conductive layer; The second conductive layer has a first opening, and the first insulating layer and the second insulating layer are The second opening is provided inside the first opening, and the third conductive layer is The display device is electrically connected to the first conductive layer through the opening.

[0012] Another embodiment of the present invention is a liquid crystal display device having a first conductive layer, a second conductive layer, and a liquid crystal element. A display device, wherein the first conductive layer is an area where a semiconductor layer of a transistor extends, and The liquid crystal element has a third conductive layer, a liquid crystal layer, and a fourth conductive layer, and the liquid crystal layer is The first to fourth conductive layers are provided between the first conductive layer and the fourth conductive layer, and the first to fourth conductive layers have a light-transmitting property to visible light. The first to fourth conductive layers have overlapping regions, and the second conductive layer has a first a first conductive layer between the first conductive layer and the third conductive layer, and a second conductive layer between the first conductive layer and the second conductive layer; a second insulating layer is provided between the second conductive layer and the third conductive layer; The second conductive layer has a first opening, and the first insulating layer and the second insulating layer have a second opening. the second opening is provided inside the first opening, and the third conductive layer has The display device is electrically connected to the first conductive layer through the second conductive layer.

[0013] The second conductive layer is a common electrode, and the first conductive layer, the second conductive layer and the first insulating layer are The second conductive layer, the third conductive layer, and the The second insulating layer can act as a second capacitive element.

[0014] The first to fourth conductive layers can be made of a metal oxide.

[0015] The transistor also has a fifth conductive layer that acts as a gate electrode. For the insulating layer, a metal oxide that is transparent to visible light may be used.

[0016] The fifth conductive layer may have a region overlapping with the first to fourth conductive layers.

[0017] Furthermore, the transistor preferably has a metal oxide in a semiconductor layer in which a channel is formed. It's nice.

[0018] In this specification, a connector, such as an FPC (Flexible Printed Circuit) printed circuit) or TCP (Tape Carrier Pack modules with a TCP (transmission control) attached, and modules with a printed wiring board attached to the TCP or a substrate on which display elements are formed, using the COG (Chip On Glass) method. In some cases, the display device also includes a module on which an IC (integrated circuit) is directly mounted. [Effects of the Invention]

[0019] According to one embodiment of the present invention, a liquid crystal display device with a high aperture ratio can be provided. It is possible to provide a liquid crystal display device with low power consumption, or a high-definition liquid crystal display device. Alternatively, a highly reliable liquid crystal display device can be provided.

[0020] The description of these effects does not preclude the existence of other effects. However, it is not necessary to have all of these effects. , it is possible to extract effects other than these. [Brief explanation of the drawings]

[0021] [Figure 1] FIG. [Figure 2] FIG. [Figure 3] 1A and 1B are a top view and a cross-sectional view illustrating a pixel. [Figure 4] FIG. [Figure 5] 1A and 1B are a top view and a cross-sectional view illustrating a pixel. [Figure 6] FIG. [Figure 7] FIG. [Figure 8] 1A and 1B are a top view and a cross-sectional view illustrating a pixel. [Figure 9] FIG. [Figure 10] FIG. [Figure 11] 1A and 1B are a top view and a cross-sectional view illustrating a pixel. [Figure 12] FIG. [Figure 13] FIG. 1 is a perspective view illustrating a display device. [Figure 14] FIG. 2 is a perspective view illustrating a touch panel and an input device. [Figure 15] FIG. 1 is a cross-sectional view illustrating a display device. [Figure 16] FIG. 1 is a cross-sectional view illustrating a display device. [Figure 17] FIG. 1 is a cross-sectional view illustrating a display device. [Figure 18] FIG. 2 is a diagram illustrating the arrangement of pixels. [Figure 19] FIG. 4 is a diagram showing an example of an operation mode. [Figure 20] 1A and 1B are diagrams illustrating examples of electronic devices. DETAILED DESCRIPTION OF THE INVENTION

[0022] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description. The present invention may be modified in various forms and details without departing from the spirit and scope of the present invention. It will be readily apparent to those skilled in the art that the present invention can be modified in various ways. The present invention is not to be construed as being limited to the description in the form of

[0023] In the configuration of the invention described below, the same parts or parts having similar functions are The same reference numerals are used in common between different drawings, and repeated explanations thereof will be omitted. When referring to a function, the hatch pattern may be the same and no particular symbol may be assigned.

[0024] In addition, the position, size, range, etc. of each component shown in the drawings are not necessarily the same as in reality for ease of understanding. Therefore, the disclosed invention may not necessarily represent the position, size, range, etc. Furthermore, the present invention is not limited to the position, size, range, etc. disclosed in the drawings.

[0025] The words "film" and "layer" may be used interchangeably depending on the situation. For example, the term "conductive layer" can be replaced with "conductive film." Alternatively, for example, the term "insulating film" can be changed to The term can be changed to "insulating layer."

[0026] In this specification, metal oxide is a broad term referring to metal oxides. Metal oxides are oxides. Metal oxides are oxide insulators and oxide conductors (including transparent oxide conductors). , oxide semiconductors (also called "OS"), For example, when a metal oxide is used in the semiconductor layer of a transistor, the metal An oxide may be referred to as an oxide semiconductor. In other words, the transistor may be a transistor having a metal oxide or an oxide semiconductor. do.

[0027] In this specification and the like, metal oxides containing nitrogen are also referred to as metal oxides. Nitrogen-containing metal oxides are also called metal oxynitrides (met). It may also be called hydroxybenzoxanthate (hydroxybenzoxanthate).

[0028] (Embodiment 1) In this embodiment, a display device according to one embodiment of the present invention will be described.

[0029] A display device according to one embodiment of the present invention includes a first conductive layer, a second conductive layer, and a liquid crystal element. In addition, the liquid crystal element has a structure in which a liquid crystal layer is provided between a third conductive layer and a fourth conductive layer. .

[0030] The first to fourth conductive layers are transparent to visible light and have overlapping regions. In addition, the second conductive layer is provided between the first conductive layer and the third conductive layer.

[0031] Between the first conductive layer and the second conductive layer, and between the second conductive layer and the third conductive layer, Therefore, two capacitance elements each having the second conductive layer as an electrode are stacked. It has a layered structure.

[0032] The two capacitance elements are transparent and overlap with the liquid crystal element, which increases the aperture ratio. This allows the display device to have a high level of power consumption. High precision can be achieved.

[0033] FIG. 1 is a perspective view illustrating main elements provided in a pixel of a liquid crystal display device according to one embodiment of the present invention. 2 is a diagram in which the perspective view is expanded in the up-down direction. For clarity, the insulating layers and other elements have been omitted for simplification.

[0034] The pixel 10a includes a wiring 31, a wiring 32, a transistor 21, a conductive layer 42, and a conductive layer 4 3 and has.

[0035] Here, the wiring 31 functions as a scanning line, and the wiring 32 functions as a signal line. The wiring 31 and the wiring 32 include a metal layer with low resistance to prevent signal delay. It is preferable to form it by

[0036] Furthermore, a part of the wiring 31 and the region to which the wiring 31 extends are used as the gate of the transistor 21. Depending on the material used for the channel region of the transistor 21, The characteristics of the transistor 21 may change due to the wiring of a metal layer with high light blocking properties. By using 31, external light or backlight light etc. is irradiated onto the channel region. This can improve the reliability of the transistor 21.

[0037] The transistor 21 is a bottom-gate transistor and includes a semiconductor layer 25 and a conductive layer 41a. and a conductive layer 41b.

[0038] The conductive layer 41a functions as either a source or a drain. It is electrically connected to the wiring 32 .

[0039] The conductive layer 41b functions as the other of the source and the drain. b functions as one or the other electrode of the capacitor element.

[0040] The conductive layer 42 functions as one or the other electrode of the capacitor element. 2 is a common electrode, which also functions as a capacitance line.

[0041] The conductive layer 43 functions as a pixel electrode of a liquid crystal element. It functions as one or the other electrode of the element.

[0042] The conductive layer 42 has an opening 42b. In the opening 42b, the conductive layer 41b and the conductive Layers 43 are electrically connected.

[0043] A first insulating layer (not shown in FIGS. 1 and 2) is provided between the conductive layer 41b and the conductive layer 42. Therefore, the conductive layer 41b and the conductive layer 42 are used as electrodes, and the first insulating layer is used as a dielectric. Therefore, the capacitor element 26 can be formed.

[0044] In addition, a second insulating layer (not shown in FIGS. 1 and 2) is provided between the conductive layer 42 and the conductive layer 43. Therefore, the conductive layer 42 and the conductive layer 43 are used as electrodes, and the second insulating layer is used as a dielectric. Thus, the capacitor element 27 can be formed.

[0045] 3A is a top view of the pixel 10a. As shown in FIG. 3A, the wiring 31 and the wiring In the area excluding the line 32, the conductive layer 41b, the conductive layer 42, and the conductive layer 43 are overlapped with each other. The arrangement is such that it has an area.

[0046] In one embodiment of the present invention, the conductive layer 41b, the conductive layer 42, the conductive layer 43, the first insulating layer and The first insulating layer and the second insulating layer are formed of a material that transmits visible light. The conductive layer 43, which also functions as a pixel electrode, the capacitor element 26, and the capacitor element 27 overlap each other. Therefore, the aperture ratio of the pixel 10a can be increased. .

[0047] FIG. 3B is a cross-sectional view corresponding to the cross section taken along line A1-A2 shown in FIG. 3A. (C) is a cross-sectional view corresponding to the cross section taken along line A3-A4 shown in FIG. 3(B) and (C), the substrate 71, the substrate 72, the liquid crystal element 7, which are not shown in FIG. 5, the cross sections of the colored layer 65, the light-shielding layer 66, etc. are also shown.

[0048] The liquid crystal element 75 is a transmissive type and operates in a vertical electric field mode. The liquid crystal display device may have an alignment film 61, a liquid crystal layer 63, an alignment film 62, and a conductive layer 64. Cut.

[0049] In addition, an insulating layer is provided between each element as needed. The insulating layer 51 functions as a gate insulating film of the transistor 21. The insulating layer 52 and the insulating layer 53 provided on the substrate 5b function as a protective film and a planarizing film, respectively. The insulating layer 55 provided between the colored layer 65 and the light-shielding layer 66 and the common electrode is It functions as a protective film and a planarizing film. Note that the above-mentioned insulating layer is an example, and other insulating layers may be used. Alternatively, a part of the insulating layer may be omitted. good.

[0050] Here, the area where the conductive layer 41b, the insulating layer 52, the insulating layer 53 and the conductive layer 42 overlap is a capacitance. The conductive layer 42 functions as the element 26. In addition, the area where the conductive layer 42, the insulating layer 54, and the conductive layer 43 overlap each other functions as a capacitor 27. That is, in the liquid crystal display device of one embodiment of the present invention, It has a stacked capacitor element with a common electrode.

[0051] As the number of pixels per unit area increases, the area of ​​the pixel inevitably becomes smaller, so the shape within the pixel Therefore, the function of holding the image signal is reduced. In one embodiment of the present invention, a stacked layer having an area where the capacitor element 26 and the capacitor element 27 overlap each other is formed. However, since one electrode is common, the capacitance element 26 and the capacitance element 27 are connected in parallel. Therefore, the capacitance value can be made larger than that of a configuration in which only one of the capacitance elements is provided. This makes it possible to suppress a decrease in the function of retaining image signals.

[0052] Also, the capacitance element 26 having the conductive layer 41b and the conductive layer 42, and the capacitance element 26 having the conductive layer 42 and the conductive layer The capacitor element 27 having the capacitor 43 is transparent to visible light.

[0053] Therefore, when light from the backlight is irradiated from the substrate 71 side, the light is directed in the direction indicated by the dashed arrow. The light from the backlight also passes through the opening 42b.

[0054] As shown in FIGS. 3B and 3C, the light from the backlight is taken to the outside through the colored layer 65. By extracting the light through the colored layer 65, the light can be colored to a desired color. The color of the colored layer 65 can be red (R), green (G), blue (B), cyan (C), magenta (Yellow), or blue (Yellow). You can choose from a variety of colors, including black (M), yellow (Y), etc. The backlight is Irradiation may be performed from the 72 side.

[0055] As described above, by using the structure of one embodiment of the present invention, a liquid crystal display device with a high aperture ratio can be provided. Therefore, a clear image can be formed without increasing the intensity of the backlight. This allows the liquid crystal display device to reduce its power consumption.

[0056] A liquid crystal display device according to one embodiment of the present invention has a pixel 10b shown in the perspective view of FIG. It's okay to have it.

[0057] FIG. 4B is a perspective view of the transistor 21 and the wiring 31 in the pixel 10b. The pixel 10b differs from the pixel 10a in the configuration of the conductive layer that functions as the gate of the transistor 21. do.

[0058] The pixel 10a is configured to use the region where the wiring 31 extends as a gate, but the pixel 10b In this case, the conductive layer 33 that is transparent to visible light is used as the gate. The area of ​​the optical wiring 31 can be reduced.

[0059] 5A is a top view of the pixel 10b. FIG. 5B is a top view of the pixel 10b along the line B1- 5(C) is a cross-sectional view corresponding to the cross section of B2. 1 is a cross-sectional view corresponding to the cross section of FIG.

[0060] In the pixel 10b, in the area excluding the wiring 31 and the wiring 32, the conductive layer 33 and other elements For example, the semiconductor layer 25 of the transistor 21 and the conductive layer 4 Light can be transmitted through the contact portion with 1b and the channel portion of the transistor 21. Therefore, the aperture ratio can be improved compared to the pixel 10a. The semiconductor layer 25 is formed of a material that is transparent to visible light, regardless of the pixel configuration. It is possible.

[0061] In addition, in FIGS. 4A, 4B and 5A, the wiring 31 is formed on the conductive layer 33. However, a conductive layer 33 may be formed on the wiring 31. .

[0062] The liquid crystal display device of one embodiment of the present invention includes a pixel 10c shown in the perspective views of FIGS. The pixel 10c may have the same structure as the pixels 10a and 10b except for the transistor structure. It has a similar configuration to that of the above.

[0063] The pixel 10c has a self-aligned top gate structure for the transistor. The transistor 22 includes a semiconductor layer 25, a conductive layer 41a, a conductive layer 41b, and a conductive layer 34. It has.

[0064] The conductive layer 41a functions as either a source or a drain. The conductive layer 41b functions as the other of the source and the drain of the capacitor element. The conductive layer 34 functions as one or the other electrode. do.

[0065] 8A is a top view of the pixel 10c. FIG. 8B is a top view of the pixel 10c along the line C1- 8(C) is a cross-sectional view corresponding to the cross section of line C3-C4 shown in FIG. 1 is a cross-sectional view corresponding to the cross section of FIG.

[0066] In the pixel 10c, the semiconductor layer 2 is formed in the region excluding the wiring 31, the wiring 32, and the conductive layer 34. The area where the 5 and other elements overlap also has light transmittance. Therefore, the aperture ratio can be improved. The conductive layer 34 can be made of a low resistance material such as a metal. As shown in (A), the conductive layer 34 is replaced with a conductive layer 34b that is transparent to visible light. By adopting this configuration, the aperture ratio can be further improved.

[0067] As shown in FIG. 8B, in the case of a transistor with a top gate structure, the substrate 71 and It is preferable to provide an insulating layer 56 between the semiconductor layer 25. Due to the shielding effect of the insulating layer 56, It is possible to prevent impurities from diffusing from the substrate 71 to the semiconductor layer 25. When an oxide semiconductor is used for the insulating layer 56 and the protective film 57, the semiconductor Oxygen vacancies in the conductor layer 25 can be compensated for, and the reliability of the transistor can be improved. Cut.

[0068] Furthermore, the liquid crystal display device according to one embodiment of the present invention has a structure including a pixel 10d shown in FIGS. 9 and 10. The pixel 10d has a different semiconductor layer 25 with a different shape, and the conductive layer 41a and the conductive layer 41b are different from the semiconductor layer 25. The pixel 10c has the same configuration as the pixel 10c, except that it does not have the conductive layer 41b.

[0069] In the transistor 22, the semiconductor layer 25 functions as either a source or a drain. and a region 25c that functions as the other of the source and drain.

[0070] In the transistor 22 of pixel 10c, region 25b functions as either a source or a drain. In the pixel 10d, the transistor 22 is connected to the conductive layer 41a. 5b and the wiring 32 are directly connected.

[0071] The transistor 22 of the pixel 10c has a region 25c as the other of the source and drain. The conductive layer 41b is connected to the capacitor 26, and functions as an electrode of the capacitor 26. On the other hand, in the transistor 22 of the pixel 10d, the region 25c is extended to form a capacitor. It is used as an electrode of the capacitance element 26.

[0072] Therefore, steps for forming the conductive layers 41a and 41b can be omitted. The manufacturing cost can be reduced.

[0073] 11(A) is a top view of the pixel 10d. FIG. 11(B) is a top view of the pixel 10d. 11(C) is a cross-sectional view corresponding to the cross section taken along the line D1-D2 in FIG. FIG. 2 is a cross-sectional view corresponding to the cross section taken along line D3-D4.

[0074] In the pixel 10d, similarly to the pixel 10c, the area excluding the wiring 31, the wiring 32, and the conductive layer 34 In this case, the area where the semiconductor layer 25 overlaps with other elements also has light-transmitting properties. As shown in FIG. 12(B), the conductive layer 34 can be irradiated with visible light. The conductive layer 34b may be replaced with a conductive layer 34b that is light-transmitting to the light. The aperture ratio can be improved significantly.

[0075] Furthermore, since the pixel 10d does not have the conductive layer 41b, the transmittance at the opening is also lower than that of the pixel 10c. It will also be more expensive.

[0076] As shown in FIG. 11(B), the semiconductor layer 25 has a region 25 which functions as a channel forming region. a, a region 25b serving as either a source or a drain, and a region 25c serving as either a source or a drain. The region 25b and the region 25c function as the other of the low resistance regions. By performing plasma treatment or doping treatment using the conductive layer 34 as a mask, It can be formed by introducing impurities into the semiconductor layer 25 to generate oxygen vacancies. .

[0077] The following materials can be used for the transistors, wirings, capacitors, and the like. These materials are used for the semiconductor layer and the semiconductor layer that transmit visible light in the other structural examples shown in this embodiment mode. It can also be applied to conductive layers.

[0078] The semiconductor layer of the transistor can be formed using a light-transmitting semiconductor material. As the light-transmitting semiconductor material, metal oxide or oxide semiconductor (Oxid Oxide semiconductors include at least indium It is preferable that the alloy contains zinc. It is particularly preferable that the alloy contains indium and zinc. In addition to these, aluminum, gallium, yttrium, copper, vanadium, beryllium, Boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, Lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium The composition may contain one or more selected from the group consisting of ammonium, ammonium nitrate ...

[0079] The conductive layer of the transistor can be formed using a light-transmitting conductive material. The transparent conductive material is one selected from the group consisting of indium, zinc, and tin, or It is preferable to include a plurality of types. Specific examples of the conductive material having transparency include In oxide, I n-Sn oxide (also known as ITO: Indium Tin Oxide), In-Zn oxide oxide, In-W oxide, In-W-Zn oxide, In-Ti oxide, In-Sn-Ti oxide oxides, In-Sn-Si oxides, Zn oxides, Ga-Zn oxides, etc.

[0080] In addition, an oxide film having a low resistance, for example, by containing an impurity element in a conductive layer of a transistor, can be used. The oxide semiconductor having a low resistance may be an oxide conductor (OC: It can be called a bismuth oxide conductor.

[0081] For example, an oxide conductor is formed by forming oxygen vacancies in an oxide semiconductor and adding hydrogen to the oxygen vacancies. By this, a donor level is formed near the conduction band. As a result, the oxide semiconductor becomes electrically conductive and has high conductivity.

[0082] Note that oxide semiconductors have a large energy gap (for example, an energy gap of 2 0.5 eV or more), it is transparent to visible light. The oxide semiconductor has a donor level near the conduction band. Conductors are less affected by absorption due to donor levels and exhibit the same level of absorption as oxide semiconductors for visible light. It has a light transmittance of .

[0083] The oxide conductor may contain one or more metal elements contained in a semiconductor layer of a transistor. It is preferable that the oxide semiconductors constituting the transistors have the same metal element. By using it for two or more of the layers, the manufacturing equipment (for example, film forming equipment, processing equipment, etc.) can be reduced to two or more layers. Since it can be commonly used in the above steps, manufacturing costs can be reduced.

[0084] By using the pixel structure of the liquid crystal display device described in this embodiment, Therefore, power consumption is reduced. In addition, an excellent liquid crystal display device can be provided.

[0085] Next, the liquid crystal display device of this embodiment will be described with reference to FIG. 13 is a perspective view of the device 100A, with a portion thereof being enlarged. Therefore, the substrate 72 is shown by a broken line, and components such as the polarizing plate 67 are omitted from the illustration.

[0086] The display device 100A includes a display unit 162 and a drive circuit unit 164. The board is equipped with FPC172 and IC173.

[0087] The display unit 162 has a plurality of pixels and has a function of displaying an image. In FIG. 13, pixel 10a is shown as an example of a sub-pixel. It may be pixel 0b, pixel 10c or pixel 10d.

[0088] For example, a red sub-pixel, a green sub-pixel, and a blue sub-pixel may be used. By configuring one pixel, full color display can be performed on the display unit 162. The colors of the sub-pixels are not limited to red (R), green (G), and blue (B). For example, the color may be white (W), yellow (Y), magenta (M), or cyan (C). In this specification and the like, a sub-pixel may be simply referred to as a pixel. do.

[0089] The display device 100A has one or both of a scanning line driving circuit and a signal line driving circuit. Alternatively, the display device may not have both a scanning line driver circuit and a signal line driver circuit. If the display device 100A has a sensor such as a touch sensor, the display device 100A In this embodiment, the driving circuit unit 164 may include: The example includes a scanning line driver circuit. The scanning line driver circuit is a circuit for driving a signal to scan the scanning lines of the display unit 162. It has the function of outputting a detection signal.

[0090] In the display device 100A, the IC 173 is mounted on the substrate 71 by a mounting method such as the COG method. The IC 173 is equipped with, for example, a signal line driving circuit, a scanning line driving circuit, and a sensor The driving circuit includes one or more of the driving circuits.

[0091] The display device 100A is electrically connected to an FPC 172. The IC 173 and the drive circuit unit 164 are supplied with signals and power from the outside. A signal can be output from IC173 to the outside via FPC172.

[0092] An IC may be mounted on the FPC 172. For example, the FPC 172 may include a signal line driver. An IC having one or more of a driving circuit, a scanning line driving circuit, and a sensor driving circuit It may be implemented.

[0093] Signals and power are supplied to the display unit 162 and the drive circuit unit 164 via wiring 165. The signal and power are supplied from IC173 or externally via FPC172. , and is input to wiring 165.

[0094] An input device 167 can be provided on the substrate 72. The configuration provided with the device 167 can function as a touch panel.

[0095] There is no limitation on the detection elements (also referred to as sensor elements) included in the touch panel of one embodiment of the present invention. We offer a variety of sensors that can detect the proximity or contact of a finger, stylus, or other object. , can be applied as a sensing element.

[0096] The sensor type may be, for example, a capacitance type, a resistive film type, a surface acoustic wave type, or an infrared type. Various methods can be used, such as a pressure-sensitive method, an optical method, or the like.

[0097] In this embodiment, a touch panel having a capacitance type detection element will be described as an example. .

[0098] The capacitance type includes a surface capacitance type, a projected capacitance type, etc. The capacitance type includes the self-capacitance type and the mutual capacitance type. This is preferable because it enables simultaneous multi-point detection.

[0099] The touch panel of one embodiment of the present invention is formed by bonding a display device and a sensing element that are separately manufactured. A detector element is formed on one or both of a substrate supporting a display element and an opposing substrate. Various configurations can be applied, such as a configuration in which electrodes or the like are provided.

[0100] 14(A) and (B) show examples of touch panels. FIG. 14(A) shows a touch panel 3 14(B) is a perspective view of the input device 167. For clarity, only representative components are shown.

[0101] The touch panel 350A is configured by bonding a display device and a sensing element that are manufactured separately. be.

[0102] The touch panel 350A has an input device 167 and a display device 100A, which are superimposed on each other. It is set up as follows.

[0103] The input device 167 includes a substrate 163, an electrode 127, an electrode 128, a plurality of wirings 137, and a plurality of wirings 138. The electrode 127 has a line 138 and a plurality of wires 139. For example, the electrode 127 has the wire 137 or the wire The electrode 128 can be electrically connected to the wiring 139. The FPC 172b can be formed by connecting the plurality of wirings 137 and the plurality of wirings 138. The FPC 172b can be provided with an IC 173b.

[0104] Alternatively, a touch sensor may be provided between the substrate 71 and the substrate 72 of the display device 100A. When a touch sensor is provided between the substrate 71 and the substrate 72, a capacitive touch sensor is used. In addition, an optical touch sensor using a photoelectric conversion element may be applied.

[0105] FIG. 15A is a cross-sectional view including a display section 162, a driving circuit section 164, and wiring 165. Note that FIG. 15(A) is an example in which the configuration of the pixel 10a shown in FIGS. 1 to 3 is applied. However, the same configuration is obtained when the pixel 10b shown in FIGS. 4 and 5 is applied.

[0106] As shown in FIG. 15A, the display device 100A includes a substrate 71, a transistor 21, a transistor resistor 22, liquid crystal element 75, alignment film 61, alignment film 62, connection portion 68, adhesive layer 73, colored layer 65, a light-shielding layer 66, an insulating layer 55, a substrate 72, and a polarizing plate 130.

[0107] The display unit 162 is provided with a transmissive liquid crystal element 75 that operates in a vertical electric field mode. The crystal element 75 includes a conductive layer 43 that functions as a pixel electrode, a conductive layer 64 that functions as a common electrode, and a and a liquid crystal layer 63. An electric field generated between the conductive layer 43 and the conductive layer 64 causes the liquid crystal The liquid crystal layer 63 is positioned between the alignment film 61 and the alignment film 62. Place.

[0108] There are two types of liquid crystal materials: positive-type, in which the anisotropy of the dielectric constant (Δε) is positive, and negative-type, in which the anisotropy of the dielectric constant (Δε) is negative. In one embodiment of the present invention, either material can be used, and the applied model The optimum liquid crystal material can be used depending on the mode and design.

[0109] The liquid crystal element 75 can be a liquid crystal element to which various modes are applied. For example, V A (Vertical Alignment) mode, TN (Twisted Nema) tic) mode, IPS (In-Plane-Switching) mode, ASM (A xially Symmetric aligned Micro-cell) mode, OCB(Optically Compensated Birefringence) mode, FLC (Ferroelectric Liquid Crystal) mode , AFLC (AntiFerroelectric Liquid Crystal) model Electrically Controlled Birefring (ECB) LCD elements that use modes such as ence, VA-IPS, and guest-host modes It can be used.

[0110] In addition, the display device 100A employs a normally black type liquid crystal element, for example, a VA mode. A transmissive liquid crystal element may be used. main Vertical Alignment) mode, PVA(Patterne) d Vertical Alignment) mode, ASV (Advanced Su per View) mode can be used.

[0111] The liquid crystal element is an element that controls the transmission or non-transmission of light by the optical modulation action of the liquid crystal. The optical modulation effect of liquid crystals is due to the electric field (horizontal electric field, vertical electric field or The liquid crystal used in the liquid crystal element is thermoelectric. ropic liquid crystal, low molecular liquid crystal, polymer liquid crystal, polymer dispersed liquid crystal (PDLC) Dispersed Liquid Crystal, Ferroelectric Liquid Crystal, Antiferroelectric Liquid Crystal These liquid crystal materials can exhibit a cholesteric phase, a smectic phase, etc. depending on the conditions. These phases include nematic, cubic, chiral nematic, and isotropic phases.

[0112] Since the display device 100A is a transmissive liquid crystal display device, the conductive layer 43 and the conductive layer 64 Both layers are made of a conductive material that transmits visible light. A conductive material that transmits visible light can be used for one or more of the above. At least a part of the area where the transistor 21 is provided is also used as an area effective for display. It is possible.

[0113] Examples of conductive materials that transmit visible light include indium (In), zinc (Zn), and tin. It is preferable to use a material containing one or more selected from the group consisting of indium oxide (Sn). Contains indium, indium tin oxide (ITO), indium zinc oxide, and tungsten oxide Indium oxide, indium zinc oxide with tungsten oxide, indium zinc oxide with titanium oxide Indium oxide, indium tin oxide with titanium oxide, indium with silicon oxide Examples include tin oxide (ITSO), zinc oxide, and zinc oxide containing gallium. A film containing graphene can also be used. The film containing graphene is, for example, graphene oxide. The film can be formed by reducing a film containing

[0114] The conductive layer 33, the conductive layer 34, the conductive layer 41a, the conductive layer 41b, and the conductive layer One or more of the conductive layers 42, 43, and 64 is a form of a metal oxide. It is preferable to use an oxide conductive layer. The oxide conductive layer is a layer formed on the semiconductor layer 2 of the transistor 21. It is preferable that the oxide conductive layer contains one or more metal elements included in 5. For example, the oxide conductive layer Preferably, the oxide contains indium, and is an In-M-Zn oxide (wherein M is Al, Ti, Ga, Y). , Zr, La, Ce, Nd, Sn or Hf) film is more preferred.

[0115] In addition, the conductive layer 33, the conductive layer 34, the conductive layer 41a, the conductive layer 41b, the conductive layer 42, and the conductive layer 43 and one or more of the conductive layers 64 are made of an oxide semiconductor, which is one type of metal oxide. The oxide semiconductors having the same metal element may be used for the layers constituting the display device. By using two or more of these layers, the manufacturing equipment (for example, film forming equipment, processing equipment, etc.) can be used for two or more layers. Since it can be used in common in the process, the manufacturing cost can be reduced.

[0116] The oxide semiconductor has at least one of oxygen vacancies and impurity concentrations such as hydrogen and water in the film. On the other hand, it is a semiconductor material whose resistance can be controlled. A treatment that increases at least one of oxygen vacancies and impurity concentration in the layer, or oxygen vacancies and By selecting a treatment that reduces at least one of the impurity concentrations, the effectiveness of the oxide conductive layer can be improved. The resistivity can be controlled.

[0117] In this way, the oxide conductive layer formed using the oxide semiconductor layer has a carrier density A high-resistance and low-resistance oxide semiconductor layer, a conductive oxide semiconductor layer, or a highly conductive oxide semiconductor layer It can also be called a compound semiconductor layer.

[0118] In addition, by forming the oxide semiconductor layer and the oxide conductive layer using the same metal element, the manufacturing cost can be reduced. For example, by using a metal oxide target of the same metal composition, In addition, the oxide semiconductor layer and the oxide conductive layer can be formed by the above-described method. The etching gas or etching solution used in processing can be used in common. The oxide semiconductor layer and the oxide conductive layer may have different compositions even if they contain the same metal element. For example, during the manufacturing process of a display device, metal elements in the film may be separated, resulting in a different metal composition. This may be the case.

[0119] In the display device 100A, a colored layer 65 and a light-shielding layer 66 are provided on a liquid crystal layer 63. An insulating layer 55 is provided between the colored layer 65 and the light-shielding layer 66 and the liquid crystal layer 63. The insulating layer 55 is preferably formed so that impurities contained in the colored layer 65 and the light-shielding layer 66 are prevented from penetrating into the liquid crystal layer. 63 and also functions as a planarizing film.

[0120] The substrate 71 and the substrate 72 are bonded together by an adhesive layer 73. 2 and the adhesive layer 73, the liquid crystal layer 63 is sealed.

[0121] When the display device 100A is made to function as a transmissive liquid crystal display device, the polarizer is 15 shows the polarizing plate 67 on the substrate 72 side. The light from the backlight arranged outside the polarizing plate provided on the plate 71 passes through the polarizing plate. At this time, the voltage applied between the conductive layer 43 and the conductive layer 64 causes the liquid crystal layer 63 The orientation of the polarizer 67 can be controlled to control the optical modulation of light. The intensity of the emitted light can be controlled. Since light outside the wavelength range is absorbed, the emitted light is, for example, red (R), blue (B), or or green (G) light.

[0122] As the polarizing plate, for example, a circular polarizing plate can be used. For example, a laminate of a linear polarizer and a quarter-wave retardation plate can be used. This reduces the viewing angle dependency of the display device.

[0123] The liquid crystal element 75 may also be driven using a guest-host liquid crystal mode. When using a stock liquid crystal mode, it is not necessary to use either or both polarizers. This reduces light absorption by the plate, improving light extraction efficiency and making the display brighter. It is possible.

[0124] The driving circuit section 164 includes a transistor 23. The transistor 23 functions as a gate. The semiconductor layer includes a conductive layer 37, a gate insulating film, a semiconductor layer, a conductive layer 35, and a conductive layer 36. One of the conductive layers 35 and 36 functions as a source, and the other functions as a drain. .

[0125] The transistors provided in the driver circuit portion 164 do not necessarily have a function of transmitting visible light. Therefore, the conductive layer 36 and the conductive layer 37 may be made of a low-resistance metal layer or the like. It is possible.

[0126] At the connection portion 68, the wiring 165 and the conductive layer 44 are connected, and the conductive layer 44 and the connector 45 are connected. That is, in the connection portion 68, the wiring 165 is connected to the FP via the conductive layer 44 and the connection body 45. This configuration allows the wiring from FPC172 to Lines 165 may carry signals and power.

[0127] The transistor 21 and the transistor 22 may have the same structure or different structures. That is, the transistors included in the driver circuit portion 164 and the transistors included in the display portion 162 may be The transistors may have the same structure or different structures. However, the display unit 162 may have transistors of a plurality of structures. It may also have a transistor.

[0128] In FIG. 15A, one gate is provided for the transistor channel forming region. However, as in the case of the transistor 23 shown in FIG. 15(B), Alternatively, two gates, the conductive layer 35 and the conductive layer 38, may be provided to sandwich the formation region.

[0129] The conductive layer 35 and the conductive layer 38 can be configured so that different potentials can be supplied to each other. Alternatively, both may be electrically connected. In the former case, the threshold voltage of the transistor It is effective in controlling voltage.

[0130] In addition, a transistor with two gates electrically connected is different from other transistors. It is possible to increase the field effect mobility and the on-current compared to As a result, a circuit capable of high-speed operation can be fabricated. By using a transistor with a large on-current, the display Even if the number of wires increases due to the larger size or higher resolution of the device, the signal delay in each wire It is possible to reduce the amount of light emitted from the display, and to suppress uneven display. By applying this configuration, a highly reliable transistor can be realized.

[0131] When the conductive layer 38 is provided for the pixel 10b shown in FIGS. 4 and 5, the conductive layer 38 It is preferable that the light emitting element 100 is made of a material that is transparent to visible light.

[0132] FIG. 16A shows a display device 100 in which the configuration of the pixel 10c shown in FIGS. 6 to 8 is applied. 17A is a cross-sectional view of the pixel 10d shown in FIGS. 1. The driving circuit section 164 includes a transistor 24. will be established.

[0133] The transistors provided in the driver circuit portion 164 do not necessarily have a function of transmitting visible light. Therefore, the conductive layer 36 and the conductive layer 37 may be made of a low-resistance metal layer or the like. It is possible.

[0134] 16(B) and 17(B) show two transistors 22 and 24. FIG. 10 is a cross-sectional view in the case where a configuration in which a gate electrode is provided is applied.

[0135] Note that the pixel 10c shown in FIG. 12(A) and the pixel 10d shown in FIG. 12(B) are conductive. When the conductive layer 38 is provided, the conductive layer 38 is also formed of a material that is transparent to visible light. is preferred.

[0136] FIG. 18 is a top view showing an example of an arrangement in which the pixel 10a is a sub-pixel. The R, G, and B shown are examples of the colors of the colored layer 65 provided on the sub-pixel. In order to reduce viewing angle dependency, it is preferable to arrange the columns by inverting the pixel layout for each row. It is preferable that the pixels 10b, 10c, and 10d be arranged in the same manner. do.

[0137] Next, details of materials that can be used for each component of the display device of this embodiment will be described. The explanation will be given below. Note that the explanation of components that have already been explained may be omitted. The following materials are also used in the display devices and touch panels described below, as well as their components. It can be used as appropriate.

[0138] <Substrates 71 and 72> There is no particular limitation on the material of the substrate included in the display device of one embodiment of the present invention, and various substrates can be used. For example, a glass substrate, a quartz substrate, a sapphire substrate, a semiconductor substrate, a ceramic substrate, A composite substrate, a metal substrate, a plastic substrate, or the like can be used.

[0139] By using a thin substrate, the display device can be made lighter and thinner. Furthermore, by using a substrate thick enough to be flexible, a flexible display device can be realized. can.

[0140] In the display device of one embodiment of the present invention, a transistor or the like is formed over a formation substrate, and then a transistor or the like is formed on another substrate. By using a fabrication substrate, the characteristics of Formation of good transistors, formation of transistors with low power consumption, and durable display devices Manufacturing, imparting heat resistance to the display device, reducing the weight of the display device, or making the display device thinner. The substrate onto which the transistor is transferred is provided with a material capable of forming a transistor. Not limited to substrates, but also paper substrates, cellophane substrates, stone substrates, wood substrates, cloth substrates (natural fibers (silk) , cotton, linen), synthetic fibers (nylon, polyurethane, polyester) or recycled fibers (a acetate, cupro, rayon, recycled polyester), leather substrate, or rubber A rubber substrate or the like can be used.

[0141] <Transistors 21, 22, 23, and 24> Each transistor included in the display device of one embodiment of the present invention is a top-gate or bottom-gate transistor. Alternatively, gate electrodes may be provided above and below the channel. The semiconductor material used for the transistor is not particularly limited, and may be, for example, an oxide semiconductor, Examples include silicon and germanium.

[0142] The crystallinity of the semiconductor material used in the transistor is not particularly limited. A semiconductor with crystallinity (microcrystalline semiconductor, polycrystalline semiconductor, single crystal semiconductor, or semiconductor with a partially crystalline region) If a semiconductor having crystallinity is used, This is preferable because it can suppress deterioration of the resistor characteristics.

[0143] For example, a Group 14 element, a compound semiconductor, or an oxide semiconductor can be used for the semiconductor layer. Typically, a semiconductor containing silicon, a semiconductor containing gallium arsenide, or indium An oxide semiconductor containing the above can be applied to the semiconductor layer.

[0144] An oxide semiconductor is preferably used as a semiconductor in which a channel of a transistor is formed. In particular, it is preferable to use an oxide semiconductor having a larger band gap than silicon. If a semiconductor material with a wider band gap and lower carrier density than silicon is used, This is preferable because it can reduce the current in the off state of the transistor.

[0145] By using an oxide semiconductor, fluctuations in electrical characteristics can be suppressed, resulting in highly reliable transistors. It can be achieved.

[0146] In addition, due to its low off-state current, the charge stored in the capacitor can be released over a long period of time via the transistor. By applying such a transistor to the pixel, It is also possible to stop the driving circuit while maintaining the gradation of the image. A display device with reduced power consumption can be realized.

[0147] The transistors 21, 22, 23, and 24 are made of a highly purified oxide that suppresses the formation of oxygen vacancies. It is preferable that the semiconductor layer is provided. This reduces the off-state current of the transistor. Therefore, the retention time of electrical signals such as image signals can be extended, and the power-on state In this state, the write interval can be set longer. Therefore, the frequency of refresh operations can be reduced. This has the effect of reducing power consumption.

[0148] Furthermore, the transistors 21, 22, 23, and 24 have relatively high field-effect mobility. Therefore, high-speed driving is possible. When such a transistor capable of high-speed driving is used in a display device, By doing so, the transistors of the display section and the transistors of the driver circuit section are formed on the same substrate. That is, a semiconductor formed by a silicon wafer or the like can be used as a driving circuit. Since there is no need to use a conductor device, the number of components in the display device can be reduced. The display also uses transistors capable of high-speed operation, providing high-quality images. It is possible.

[0149] <Insulating layer> Insulating materials that can be used for the insulating layers, spacers, etc. of a display device include organic insulating materials. The insulating material may be an organic insulating material or an inorganic insulating material. resin, epoxy resin, polyimide resin, polyamide resin, polyimideamide resin, silicone Examples of inorganic resins include benzocyclobutene resins, benzocyclobutene resins, and phenol resins. The insulating layer may be a silicon oxide film, a silicon oxynitride film, a silicon nitride oxide film, or a silicon nitride film. aluminum oxide film, hafnium oxide film, yttrium oxide film, zirconium oxide film aluminum film, gallium oxide film, tantalum oxide film, magnesium oxide film, lanthanum oxide film, ceramic oxide film Examples of the thin film include a lithium film and a neodymium oxide film.

[0150] <Conductive layer> In addition to the gate, source, and drain of a transistor, various wirings and electrodes of a display device Conductive layers such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, etc. Metals such as aluminum, molybdenum, silver, tantalum, or tungsten, or materials mainly composed of these The alloy containing aluminum can be used as a single layer or a laminated structure. Two-layer structure with titanium film laminated on tungsten film, two-layer structure with titanium film laminated on tungsten film , a two-layer structure with a copper film laminated on a molybdenum film, and an alloy film containing molybdenum and tungsten A two-layer structure in which a copper film is laminated on a copper-magnesium-aluminum alloy film. Two-layer structure: titanium film or titanium nitride film and a layer on top of the titanium film or titanium nitride film An aluminum or copper film is laminated, and then a titanium or titanium nitride film is formed on top of that. The three-layer structure is a molybdenum film or molybdenum nitride film and a molybdenum film or molybdenum nitride film. An aluminum film or copper film is laminated on the molybdenum film, and a molybdenum film is then formed on top of that. Alternatively, there is a three-layer structure in which a molybdenum nitride film is formed. For example, the conductive layer has a three-layer structure. In this case, the first and third layers may contain titanium, titanium nitride, molybdenum, tungsten, molybdenum, alloys containing tungsten and molybdenum, alloys containing zirconium and molybdenum, or molybdenum nitride The second layer is made of copper, aluminum, gold or silver, or copper and manganese. It is preferable to form a film made of a low resistance material such as an alloy of ITO and titanium oxide. Indium oxide containing tungsten, indium zinc oxide containing tungsten oxide, Indium oxide containing titanium oxide, indium tin oxide containing titanium oxide, indium zinc A light-transmitting conductive material such as lead oxide or ITSO may also be used.

[0151] Note that the oxide conductive layer may be formed by controlling the resistivity of the oxide semiconductor.

[0152] ≪Adhesive layer 73≫ The adhesive layer 73 is made of a hard material such as a thermosetting resin, a photocurable resin, or a two-liquid mixed type hardening resin. For example, acrylic resin, urethane resin, epoxy resin, Alternatively, a siloxane resin or the like can be used.

[0153] <Connector 45> The connector 45 may be, for example, an anisotropic conductive film (ACF). Conductive Film), or Anisotropic Conductive Paste (ACP) Conductive Paste) can be used.

[0154] ≪Colored layer 65≫ The colored layer 65 is a colored layer that transmits light in a specific wavelength band. The materials that can be used include metal materials, resin materials, and resin materials containing pigments or dyes. Examples include:

[0155] ≪Light-shielding layer 66≫ The light-shielding layer 66 is provided, for example, between adjacent colored layers 65 of different colors. black matrix formed using a material or a resin material containing a pigment or dye can be used as the light-shielding layer 66. The light-shielding layer 66 can be used in the driving circuit section 164, etc. It is preferable to provide the light emitting element 162 in an area other than the display area 162, since this can suppress light leakage due to guided light or the like. stomach.

[0156] The thin films (insulating films, semiconductor films, conductive films, etc.) that make up the display device are each formed by sputtering. method, chemical vapor deposition (CVD) method , vacuum evaporation, pulsed laser deposition (PLD) tion) method, Atomic Layer Deposition (ALD) method ) method, etc. As an example of the CVD method, plasma chemical vapor deposition (P Examples of thermal CVD include metal organic chemical vapor deposition (ECV) and thermal CVD. One example is metal organic chemical vapor deposition (MOCVD).

[0157] The thin films (insulating films, semiconductor films, conductive films, etc.) that make up the display device are formed by spin coating, Dip, spray application, inkjet printing, dispensing, screen printing, offset Printing, doctor knife, slit coating, roll coating, curtain coating, knife coating The film can be formed by a method such as a coating method.

[0158] The thin films that constitute the display device can be processed using photolithography or the like. Alternatively, an island-shaped thin film may be formed by a film formation method using a shielding mask. Even if the thin film is processed by imprinting, sandblasting, or lift-off, The photolithography method involves forming a resist mask on the thin film to be processed, The thin film is processed by etching or the like, and the resist mask is removed. a method of forming a thin film by exposing and developing it to a desired shape, There is.

[0159] In the photolithography method, the light used for exposure is, for example, i-line (wavelength 365 nm) ), g-line (wavelength 436 nm), h-line (wavelength 405 nm), and a mixture of these In addition, ultraviolet light, KrF laser light, ArF laser light, etc. can be used. Alternatively, exposure may be performed by immersion exposure. Examples include extreme ultraviolet (EUV) and X-rays. In addition, electron beams can be used instead of light for exposure. The use of a wire or an electron beam is preferable because it allows extremely fine processing. When exposure is performed by scanning a beam such as a electron beam, a photomask is not required. be.

[0160] For etching thin films, there are dry etching, wet etching, and sandblasting methods. etc. can be used.

[0161] As described above, a liquid crystal display device with a high aperture ratio and low power consumption can be manufactured.

[0162] This embodiment mode can be combined with other embodiment modes as appropriate.

[0163] (Embodiment 2) In this embodiment, operation modes that can be performed in a display device of one embodiment of the present invention are illustrated. 19 will be used to explain.

[0164] In the following, we will assume that the device operates at a normal frame frequency (typically 60Hz or higher and 240Hz or lower). The normal drive mode operates at a low frame frequency, and the idle stop (I DS) drive mode will be explained as an example.

[0165] In the IDS drive mode, after the image data writing process is executed, the image data is written. This refers to a driving method that stops the switching of image data. By extending the interval between writing of image data, the time required to write image data during that time can be reduced. The IDS drive mode can reduce power consumption by the amount of power consumed. The frame frequency can be set to about 1 / 100 to 1 / 10 of the normal frame rate. The video signal is the same between frames. Therefore, the IDS driving mode can display a still image. This is particularly effective when displaying images using IDS driving, which reduces power consumption. This reduces noise, suppresses screen flicker, and reduces eye strain.

[0166] 19(A) to 19(C) are circuit diagrams of a pixel circuit and a normal driving mode and an IDS driving mode. 19A is a timing chart illustrating the operation mode of the liquid crystal element 50. 1 and a pixel circuit 506 electrically connected to the liquid crystal element 501. In the pixel circuit 506 shown in FIG. 19(A), a signal line SL, a gate line GL, and a signal line SL and a gate line GL are connected. and a transistor M1 connected to the gate line GL, and a capacitance element connected to the transistor M1. Child Cs LC This shows that:

[0167] The transistor M1 can be a leakage path for the data D1. The smaller the off-state current, the more preferable. It is preferable to use a transistor having a metal oxide in the body layer. When the metal oxide has at least one of a rectifying action and a switching action, , metal oxide semiconductor or acid Oxide semiconductors, abbreviated as OS. Hereinafter, as a typical example of a transistor, a transistor having an oxide semiconductor in a semiconductor layer where a channel is formed will be described. This section explains the OS transistor. The leakage current ( The pixel electrode of the liquid crystal element 501, the transistor The node to which either the source or drain of M1 and the capacitance element CsLC are connected is called the node. By using an OS transistor for the transistor M1, the node ND1 is supplied The supplied charge can be retained for a long period of time.

[0168] In the circuit diagram shown in FIG. 19A, the liquid crystal element 501 also serves as a leak path for the data D1. Therefore, in order to perform the IDS drive properly, the resistivity of the liquid crystal element 501 should be set to 1.0×1 0 14 It is preferable to set it to Ω·cm or more.

[0169] The channel region of the OS transistor is formed of, for example, In—Ga—Zn oxide, I In-Ga-Zn oxide and the like can be preferably used. A typical composition is In:Ga:Zn=4:2:4.1 [atomic ratio]. It is possible.

[0170] FIG. 19B shows the signals applied to the signal line SL and the gate line GL in the normal drive mode. 1 is a timing chart showing the waveform of a signal. In the normal drive mode, the normal frame frequency ( For example, it operates at 60 Hz. Figure 19(B) shows the periods T1 to T3. A scanning signal is applied to the gate line GL during this period, and data D1 is sent from the signal line SL to the liquid crystal element 501 and and capacitance element Cs LC This operation is performed from the period T1 to T3. The same applies whether writing data D1 or different data.

[0171] On the other hand, FIG. 19(C) shows that the signal line SL and the gate line GL in the IDS drive mode are 1 is a timing chart showing the waveform of a signal applied to the IDS drive. One frame period is represented by the period T1, and the data The write period is T W , the data retention period is period T RET The IDS driving mode is , period T W A scanning signal is applied to the gate line GL, data D1 is written to the signal line SL, and during the period T RET The gate line GL is fixed to a low level voltage, and the transistor M1 is in a non-conducting state. The data D1 that was written once is held. For example, the frequency may be set to 0.1 Hz or more and less than 60 Hz.

[0172] Therefore, by using the IDS drive mode, it is possible to reduce power consumption.

[0173] This embodiment mode can be combined with other embodiment modes as appropriate.

[0174] (Embodiment 3) In this embodiment, a semiconductor layer of a transistor disclosed in one embodiment of the present invention can be used. The following describes metal oxides that can be used in the semiconductor layer of a transistor. In this case, the metal oxide may be interpreted as an oxide semiconductor.

[0175] Oxide semiconductors are classified into single-crystal oxide semiconductors and non-single-crystal oxide semiconductors. As a crystalline oxide semiconductor, CAAC-OS (c-axis-aligned crystals talline oxide semiconductor), polycrystalline oxide semiconductor, n c-OS(nanocrystalline oxide semiconductor ), pseudo-amorphous oxide semiconductor (a-like OS) oxide semiconductor), and amorphous oxide semiconductor.

[0176] In addition, a semiconductor layer of a transistor disclosed in one embodiment of the present invention may contain CAC-OS (Clo ud-Aligned Composite oxide semiconductor ) may also be used.

[0177] Note that the semiconductor layer of the transistor disclosed in one embodiment of the present invention may be formed using the above-described non-single-crystal oxide. A non-single-crystal oxide semiconductor or CAC-OS can be preferably used. As such, nc-OS or CAAC-OS can be preferably used.

[0178] Note that in one embodiment of the present invention, CAC-OS is preferably used for a semiconductor layer of a transistor. By using CAC-OS, it is possible to provide transistors with high electrical characteristics and high reliability. It can be granted.

[0179] The following provides details about CAC-OS.

[0180] CAC-OS or CAC-metal oxide is a material that has the function of conductivity and A part of the material has an insulating function, and the entire material has a semiconductor function. Note that CAC-OS or CAC-metal oxide is used as the channel of a transistor. When used in a forming region, the conductive function is to allow electrons (or holes) to flow as carriers. The insulating function is to prevent the flow of electrons, which act as carriers. By making the functions of the gate and the insulating function work in a complementary manner, the switching function (O CAC-OS or CAC-metal oxide is given the function to turn on / off the In CAC-OS or CAC-metal oxide, By separating these functions, the functionality of both can be maximized.

[0181] Also, CAC-OS or CAC-metal oxide is used in conductive and insulating areas. The conductive region has the above-mentioned conductive function, and the insulating region has the above-mentioned insulating function. In addition, the conductive region and the insulating region in the material are formed by nanoparticle layers. The conductive and insulating regions may be separated by a bell. In addition, the conductive area may be observed as a cloud-like connected area with a blurred periphery. This may be the case.

[0182] In addition, in CAC-OS or CAC-metal oxide, the conductive region and the insulating region are The peripheral region is 0.5 nm to 10 nm, preferably 0.5 nm to 3 nm. The following sizes may be dispersed in the material:

[0183] In addition, CAC-OS or CAC-metal oxide has different band gaps. For example, CAC-OS or CAC-metal oxidized de is a component with a wide gap due to the insulating region and a component with a narrow gap due to the conductive region. In this configuration, when carriers flow, In the narrow gap component, carriers mainly flow. The component having a wide gap acts complementary to the component having a narrow gap. Carriers also flow into the wide-gap component in conjunction with the component with a wide gap. AC-OS or CAC-metal oxide is placed in the channel formation region of the transistor. When used, the transistor has a high current driving force in the on state, i.e., a large on-current. Furthermore, high field-effect mobility can be obtained.

[0184] That is, CAC-OS or CAC-metal oxide is a matrix composite material. (matrix composite) or metal matrix composite It can also be called atrix composite.

[0185] For example, the CAC-OS has elements that make up the metal oxide, and the elements are 0.5 nm or more and 10 nm or less. Preferably, it is a configuration of a material unevenly distributed in a size of 1 nm or more and 2 nm or less or in the vicinity thereof. In the following, we will refer to metal oxides in which one or more metal elements are unevenly distributed. The region having the metal element has a size of 0.5 nm to 10 nm, preferably 1 nm to 2 nm. A mixed state of particles with sizes of less than or close to 1 m is also called a mosaic or patch state.

[0186] The metal oxide preferably contains at least indium. In addition to these, aluminum, gallium, yttrium, and zinc are preferably contained. Sodium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, gel Al, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, It contains one or more selected from the group consisting of tantalum, tungsten, and magnesium. It may be possible.

[0187] For example, CAC-OS made of In-Ga-Zn oxide (In-Ga-Zn oxide among CAC-OS) a-Zn oxide may be specifically referred to as CAC-IGZO) is an indium oxide ( Below, InO X1 (where X1 is a real number greater than 0), or indium zinc oxide (Hereinafter, In X2 Zn Y2 O Z2 (X2, Y2, and Z2 are real numbers greater than 0) ) and gallium oxide (GaO X3 (X3 is a real number greater than 0), or gallium zinc oxide (hereinafter referred to as Ga X4 Zn Y4 O Z4 (X4, Y4, and Z4 are 0 The material is separated into mosaics, and the mosaic is Crystalline InO X1 , or In X2 Zn Y2 O Z2 is uniformly distributed in the film (hereafter referred to as , also called cloud-like).

[0188] In other words, CAC-OS is X3 The region where In is the main component and X2 Zn Y2 O Z2 , or InO X1 A composite metal oxide having a mixed structure with a region in which In this specification, for example, when the atomic ratio of In to the element M in the first region is , the atomic ratio of In to the element M in the second region is greater than the atomic ratio of In in the first region. The concentration of In is higher than in the region

[0189] IGZO is a common name and refers to a compound of In, Ga, Zn, and O. A typical example is InGaO3(ZnO) m1 (m1 is a natural number), or In ( 1+x0) Ga (1-x0) O3(ZnO) m0 (-1≦x0≦1, m0 is an arbitrary number) Examples of such crystalline compounds include:

[0190] The crystalline compound has a single crystal structure, a polycrystalline structure, or a CAAC structure. The CAAC structure is a structure in which multiple IGZO nanocrystals have a c-axis orientation and are aligned in the ab plane. is a non-oriented connected crystal structure.

[0191] On the other hand, CAC-OS is a material structure of metal oxide. In a material composition containing Zn and O, nanoparticles with Ga as the main component were observed in some areas. The region where In is observed as a nanoparticle and the region where In is observed as a nanoparticle are the main component are shown in the model. Therefore, in CAC-OS, The crystal structure is a secondary factor.

[0192] It should be noted that the CAC-OS does not include a laminated structure of two or more films with different compositions. For example, a structure consisting of two layers, one containing In as the main component and the other containing Ga as the main component, is not included. do not have.

[0193] In addition, GaO X3 The region where In is the main component and X2 Zn Y2 O Z2 , or InO X1 but In some cases, a clear boundary between the main component region and the main component region cannot be observed.

[0194] Instead of gallium, aluminum, yttrium, copper, vanadium, and beryllium can be used. , boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum , lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium When one or more metal elements selected from sodium, etc. are included, it is called CAC-O S has a region where nanoparticles consisting mainly of the metal element are observed in part, and a region where In is mainly contained in part. The nanoparticle-like regions that are the components of the particles are randomly dispersed in a mosaic pattern. This refers to a configuration in which

[0195] CAC-OS is formed by sputtering without intentionally heating the substrate. In addition, when the CAC-OS is formed by a sputtering method, the deposition gas is The gas is selected from an inert gas (typically argon), oxygen gas, and nitrogen gas. One or more of these may be used. The lower the flow rate ratio of the gas, the more preferable. For example, the flow rate ratio of oxygen gas is preferably 0% or more and less than 30%. It is more preferable to set the content to 0% or more and 10% or less.

[0196] CAC-OS is a type of X-ray diffraction (XRD) measurement method. When measured using the θ / 2θ scan by the out-of-plane method, In other words, from the X-ray diffraction, the measurement region It can be seen that no orientation in the ab plane direction or the c axis direction is observed.

[0197] In addition, CAC-OS irradiates electron beams with a probe diameter of 1 nm (also called nanobeam electron beams). In the electron diffraction pattern obtained by this, a ring-shaped region with high brightness and the phosphorus Therefore, from the electron diffraction pattern, it is clear that the CAC-OS The crystal structure of nc (nano- It can be seen that it has a crystal structure.

[0198] For example, in the case of CAC-OS, an In-Ga-Zn oxide, energy dispersive X-ray Energy Dispersive X-ray spectroscopy (EDX) EDX mapping obtained using a copy of the GaO X3 The region where is the principal component and , In X2 Zn Y2 O Z2 , or InO X1 The area where the main component is unevenly distributed and mixed. It can be confirmed that it has the structure shown in the figure.

[0199] CAC-OS has a structure different from that of IGZO compounds, in which metal elements are uniformly distributed. CAC-OS has different properties from ZO compounds. X3 The main ingredients are In a certain area, X2 Zn Y2 O Z2 , or InO X1 The region where is the principal component and The phases are separated into two, and the regions containing each element as the main component are arranged in a mosaic pattern.

[0200] Here, In X2 Zn Y2 O Z2 , or InO X1 The region where is the main component is GaO X3 This region has higher conductivity than the region where In is the main component. X2 Zn Y 2O Z2 , or InO X1 The carriers flow through the region where the main component is oxidized. Therefore, the conductivity of In is expressed as a semiconductor. X2 Zn Y2 O Z2 , or In O X1 The region where the main component is distributed in a cloud-like shape in the oxide semiconductor allows for a high electric field. Effective mobility (μ) can be achieved.

[0201] On the other hand, GaO X3 The region where the main components are In X2 Zn Y2 O Z2 , or InO X This region has higher insulating properties than the region where GaO is the main component. X3 etc. The distribution of the main component in the oxide semiconductor suppresses leakage current and provides good switching. Switching operation can be realized.

[0202] Therefore, when CAC-OS is used in a semiconductor device, GaO X3 Insulation caused by And, In X2 Zn Y2 O Z2 , or InO X1 The conductivity caused by the This allows for a high on-state current and a high field-effect mobility (μ). .

[0203] Furthermore, semiconductor devices using CAC-OS have high reliability. This is ideal for various semiconductor devices including displays.

[0204] This embodiment mode can be combined with other embodiment modes as appropriate.

[0205] (Fourth embodiment) Examples of electronic devices that can use the display device according to one embodiment of the present invention include display devices, personal computers, and the like. a personal computer, an image storage device or image reproduction device equipped with a recording medium, a mobile phone, a mobile phone Game consoles, including those with a camcorder, portable data terminals, e-book terminals, video cameras, digital still cameras Cameras such as cameras, goggle-type displays (head-mounted displays), navigation systems, audio playback devices (car audio, digital audio players, etc.), copying machines, fax machines, printers, printer-combined machines, automated teller machines (ATMs), Examples of such electronic devices include vending machines. Specific examples of these electronic devices are shown in Figure 20.

[0206] FIG. 20A shows a digital camera, which includes a housing 961, a shutter button 962, a microphone 963, and a microphone 964. 63, speaker 967, display unit 965, operation keys 966, zoom lever 968, lens 9 69, etc. The display device of one embodiment of the present invention can be used for the display portion 965.

[0207] FIG. 20B shows a wristwatch-type information terminal, which includes a housing 931, a display unit 932, a wristband 9 33, operation buttons 935, a crown 936, a camera 939, etc. The display device of one embodiment of the present invention is used for the display portion 932. It is possible.

[0208] FIG. 20C shows an example of a mobile phone, which includes a housing 951, a display unit 952, and an operation button 953. , an external connection port 954, a speaker 955, a microphone 956, a camera 957, etc. The mobile phone has a touch sensor on the display unit 952. All operations, such as inputting, can be performed by touching the display unit 952 with a finger or a stylus. The display device of one embodiment of the present invention can be used for the display portion 952.

[0209] FIG. 20D shows a portable data terminal, which includes a housing 911, a display portion 912, a camera 919, and the like. The display portion 912 has a touch panel function that allows input and output of information. The display device of one embodiment of the present invention can be used for the display portion 912.

[0210] FIG. 20E shows a television set, which includes a housing 971, a display unit 973, operation keys 974, and a speaker 975. The display unit 973 has a touch sensor 975, a communication connection terminal 976, an optical sensor 977, etc. The display portion 973 is provided with a display screen of one embodiment of the present invention. The device can be used.

[0211] FIG. 20F shows an information processing terminal, which includes a housing 901, a display portion 902, a display portion 903, a sensor The display unit 902 and the display unit 903 are each made up of a single display panel, and are flexible. The housing 901 is also flexible and can be folded as shown in the figure. It can also be used in a flat form like a tablet device. 4 can sense the shape of the housing 901, for example, when the housing 901 is bent, The display on the display unit 902 and the display unit 903 can be switched. The display device of one embodiment of the present invention can be used for the display portion 903.

[0212] This embodiment mode can be combined with other embodiment modes as appropriate. [Explanation of symbols]

[0213] 10a pixels 10b pixels 10c pixels 10d pixels 21 Transistor 22 transistor 23 Transistor 24 transistors 25 Semiconductor layer 25a area 25b area 25c area 26 Capacitor element 27 Capacitor element 31 Wiring 32 Wiring 33 Conductive layer 34 Conductive layer 34b Conductive layer 35 Conductive layer 36 Conductive layer 37 Conductive layer 38 Conductive Layer 41a Conductive layer 41b Conductive layer 42 Conductive layer 42b opening 43 Conductive layer 44 Conductive layer 45 Connectors 51 Insulating layer 52 Insulating layer 53 Insulating layer 54 Insulating layer 55 Insulating layer 56 Insulating layer 57 Protective film 61 Orientation film 62 Alignment film 63 Liquid crystal layer 64 Conductive layer 65 Colored layer 66 Light blocking layer 67 Polarizing Plate 68 Connection 71 PCB 72 PCB 73 Adhesive layer 75 Liquid crystal element 100A display device 127 Electrode 128 electrode 130 Polarizing Plate 137 Wiring 138 Wiring 139 Wiring 162 Display section 163 PCB 164 Drive circuit section 165 Wiring 167 Input Devices 172 FPC 172b FPC 173 IC 173b IC 350A Touch Panel 506 pixel circuit 901 Case 902 Display section 903 Display section 904 Sensors 911 chassis 912 Display section 919 Camera 931 Case 932 Display section 933 Wristband 935 Button 936 Crown 939 Camera 951 Case 952 Display section 953 Operation Button 954 External connection port 955 Speaker 956 Mike 957 Camera 961 Case 962 Shutter button 963 Mike 965 Display section 966 Operation Key 967 Speaker 968 Zoom Lever 969 Lens 971 Case 973 Display section 974 Operation Key 975 Speaker 976 Communication connection terminal 977 Optical Sensor

Claims

1. A display device including: a first transistor having a top-gate structure; a display element in which a pixel electrode is electrically connected to one of a source and a drain of the first transistor; and a capacitor element, an oxide semiconductor film including a channel formation region of the first transistor; a first conductive film having a region overlapping with the oxide semiconductor film and functioning as a gate of the first transistor; a second conductive film electrically connected to the first conductive film and having a function as a first wiring; a first insulating film having a region disposed above the oxide semiconductor film; a third conductive film electrically connected to the oxide semiconductor film through a first opening included in the first insulating film and functioning as one of a source and a drain of the first transistor; a fourth conductive film electrically connected to the oxide semiconductor film through a second opening in the first insulating film, which functions as the other of the source and the drain of the first transistor and also functions as one electrode of the capacitor; a fifth conductive film electrically connected to the third conductive film and having a function as a second wiring; a sixth conductive film electrically connected to the fourth conductive film, having a region disposed above the fourth conductive film, and functioning as the pixel electrode; a seventh conductive film having a region disposed below the sixth conductive film and functioning as the other electrode of the capacitor element; an eighth conductive film having a region disposed above the sixth conductive film and functioning as a common electrode of the display element; each of the third conductive film and the fourth conductive film contains a conductive material that transmits visible light; each of the second conductive film and the fifth conductive film has a light-shielding property; the first conductive film has a shape extending in a first direction, the second conductive film has a shape extending in a second direction intersecting the first direction, the fifth conductive film has a shape extending in the first direction and intersecting the second conductive film; Display device.

2. A display device including: a first transistor having a top-gate structure; a display element in which a pixel electrode is electrically connected to one of a source and a drain of the first transistor; and a capacitor element, an oxide semiconductor film including a channel formation region of the first transistor; a first conductive film having a region overlapping with the oxide semiconductor film and functioning as a gate of the first transistor; a second conductive film electrically connected to the first conductive film and having a function as a first wiring; a first insulating film having a region disposed above the oxide semiconductor film; a third conductive film electrically connected to the oxide semiconductor film through a first opening included in the first insulating film and functioning as one of a source and a drain of the first transistor; a fourth conductive film electrically connected to the oxide semiconductor film through a second opening in the first insulating film, which functions as the other of the source and the drain of the first transistor and also functions as one electrode of the capacitor; a fifth conductive film electrically connected to the third conductive film and having a function as a second wiring; a sixth conductive film electrically connected to the fourth conductive film, having a region disposed above the fourth conductive film, and functioning as the pixel electrode; a seventh conductive film having a region disposed below the sixth conductive film and functioning as the other electrode of the capacitor element; an eighth conductive film having a region disposed above the sixth conductive film and functioning as a common electrode of the display element; each of the third conductive film and the fourth conductive film contains a conductive material that transmits visible light; each of the second conductive film and the fifth conductive film has a light-shielding property; the first conductive film has a shape extending in a first direction, the second conductive film has a shape extending in a second direction intersecting the first direction, the fifth conductive film has a shape extending in the first direction and intersecting the second conductive film, the fifth conductive film has a region that does not overlap with the third conductive film; Display device.

3. A display device including: a first transistor having a top-gate structure; a display element in which a pixel electrode is electrically connected to one of a source and a drain of the first transistor; and a capacitor element, an oxide semiconductor film including a channel formation region of the first transistor; a first conductive film having a region overlapping with the oxide semiconductor film and functioning as a gate of the first transistor; a second conductive film electrically connected to the first conductive film and having a function as a first wiring; a first insulating film having a region disposed above the oxide semiconductor film; a third conductive film electrically connected to the oxide semiconductor film through a first opening included in the first insulating film and functioning as one of a source and a drain of the first transistor; a fourth conductive film electrically connected to the oxide semiconductor film through a second opening in the first insulating film, which functions as the other of the source and the drain of the first transistor and also functions as one electrode of the capacitor; a fifth conductive film electrically connected to the third conductive film and having a function as a second wiring; a sixth conductive film electrically connected to the fourth conductive film, having a region disposed above the fourth conductive film, and functioning as the pixel electrode; a seventh conductive film having a region disposed below the sixth conductive film and functioning as the other electrode of the capacitor element; an eighth conductive film having a region disposed above the sixth conductive film and functioning as a common electrode of the display element; each of the third conductive film and the fourth conductive film contains a conductive material that transmits visible light; each of the second conductive film and the fifth conductive film has a light-shielding property; the first conductive film has a shape extending in a first direction, the second conductive film has a shape extending in a second direction intersecting the first direction, the fifth conductive film has a shape extending in the first direction and intersecting the second conductive film, the seventh conductive film has a third opening in a region overlapping with the fourth conductive film; the third opening does not overlap with a channel formation region of the first transistor; Display device.

4. A display device including: a first transistor having a top-gate structure; a display element in which a pixel electrode is electrically connected to one of a source and a drain of the first transistor; and a capacitor element, an oxide semiconductor film including a channel formation region of the first transistor; a first conductive film having a region overlapping with the oxide semiconductor film and functioning as a gate of the first transistor; a second conductive film electrically connected to the first conductive film and having a function as a first wiring; a first insulating film having a region disposed above the oxide semiconductor film; a third conductive film electrically connected to the oxide semiconductor film through a first opening included in the first insulating film and functioning as one of a source and a drain of the first transistor; a fourth conductive film electrically connected to the oxide semiconductor film through a second opening in the first insulating film, which functions as the other of the source and the drain of the first transistor and also functions as one electrode of the capacitor; a fifth conductive film electrically connected to the third conductive film and having a function as a second wiring; a sixth conductive film electrically connected to the fourth conductive film, having a region disposed above the fourth conductive film, and functioning as the pixel electrode; a seventh conductive film having a region disposed below the sixth conductive film and functioning as the other electrode of the capacitor element; an eighth conductive film having a region disposed above the sixth conductive film and functioning as a common electrode of the display element; each of the third conductive film and the fourth conductive film contains a conductive material that transmits visible light; each of the second conductive film and the fifth conductive film has a light-shielding property; the first conductive film has a shape extending in a first direction, the second conductive film has a shape extending in a second direction intersecting the first direction, the fifth conductive film has a shape extending in the first direction and intersecting the second conductive film, the second conductive film does not overlap with the oxide semiconductor film; Display device.

5. A display device including: a first transistor having a top-gate structure; a display element in which a pixel electrode is electrically connected to one of a source and a drain of the first transistor; and a capacitor element, an oxide semiconductor film including a channel formation region of the first transistor; a first conductive film having a region overlapping with the oxide semiconductor film and functioning as a gate of the first transistor; a second conductive film electrically connected to the first conductive film and having a function as a first wiring; a first insulating film having a region disposed above the oxide semiconductor film; a third conductive film electrically connected to the oxide semiconductor film through a first opening included in the first insulating film and functioning as one of a source and a drain of the first transistor; a fourth conductive film electrically connected to the oxide semiconductor film through a second opening in the first insulating film, which functions as the other of the source and the drain of the first transistor and also functions as one electrode of the capacitor; a fifth conductive film electrically connected to the third conductive film and having a function as a second wiring; a sixth conductive film electrically connected to the fourth conductive film, having a region disposed above the fourth conductive film, and functioning as the pixel electrode; a seventh conductive film having a region disposed below the sixth conductive film and functioning as the other electrode of the capacitor element; an eighth conductive film having a region disposed above the sixth conductive film and functioning as a common electrode of the display element; each of the third conductive film and the fourth conductive film contains a conductive material that transmits visible light; each of the second conductive film and the fifth conductive film has a light-shielding property; the first conductive film has a shape extending in a first direction, the second conductive film has a shape extending in a second direction intersecting the first direction, the fifth conductive film has a shape extending in the first direction and intersecting the second conductive film, the fourth conductive film does not overlap with the fifth conductive film; Display device.

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