Electronic device, method for manufacturing electronic device, and deposition mask group

Abstract

To provide a method for appropriately controlling the shape of a second electrode in a plan view in an electronic device of a type in which the second electrode is formed such that a region in which the second electrode does not exist is located on a substrate.SOLUTION: A manufacturing method of an electronic device includes a preparation step of preparing a laminate including a substrate having a first surface and a second surface located on the opposite side of the first surface, two or more first electrodes on the first surface of the substrate, and an organic layer on the first electrode, a second electrode forming step of forming a second electrode on an organic layer such that the second electrode overlaps two or more first electrodes when viewed along the normal direction of the first surface of the substrate, and a removal step of partially removing the region of the second electrode located between the first electrodes in a plan view.SELECTED DRAWING: Figure 14

Description

[Technical Field]

[0001] TECHNICAL FIELD Embodiments of the present disclosure relate to an electronic device, a method for manufacturing an electronic device, and a deposition mask group. [Background technology]

[0002] Display devices used in portable devices such as smartphones and tablet PCs preferably have high resolution, with a pixel density of, for example, 400 ppi or higher. There is also growing demand for portable devices to support ultra-high definition (UHD), and in this case, it is preferable for the pixel density of the display device to be, for example, 800 ppi or higher.

[0003] Among display devices, organic electroluminescence (EL) display devices have attracted attention due to their excellent response, low power consumption, and high contrast. A known method for forming pixels in organic EL display devices is to use a deposition mask with through-holes arranged in a desired pattern to form pixels and electrodes in the desired pattern. For example, first, a substrate is prepared on which first electrodes are formed in a pattern corresponding to the pixels. Next, an organic material is deposited on the first electrode through the through-holes in the deposition mask, forming an emissive layer on the first electrode. Next, a conductive material is deposited on the emissive layer through the through-holes in the deposition mask, forming a second electrode on the emissive layer. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Publication No. 9-115672 Summary of the Invention [Problem to be solved by the invention]

[0005] There are two types of second electrodes in organic EL display devices: one in which the second electrode extends over the entire substrate, and one in which the second electrode is formed so that there are areas on the substrate where the second electrode is not present. In the latter case, a method is required to appropriately control the shape of the second electrode in a planar view. [Means for solving the problem]

[0006] A method for manufacturing an electronic device according to one embodiment of the present disclosure includes a preparation step of preparing a laminate including a substrate having a first surface and a second surface opposite the first surface, two or more first electrodes on the first surface of the substrate, and an organic layer on the first electrodes; a second electrode formation step of forming a second electrode on the organic layer so that the second electrode overlaps the two or more first electrodes when viewed along the normal direction of the first surface of the substrate; and a removal step of partially removing an area of ​​the second electrode that does not overlap the first electrode in a planar view. [Effects of the Invention]

[0007] According to the present disclosure, the shape of the second electrode in a plan view can be appropriately controlled. [Brief explanation of the drawings]

[0008] [Figure 1] FIG. 1 is a cross-sectional view illustrating an example of an electronic device according to an embodiment of the present disclosure. [Figure 2] FIG. 2 is an enlarged cross-sectional view of the electronic device of FIG. [Figure 3] FIG. 2 is an enlarged plan view showing the electronic device of FIG. [Figure 4A] 3 is a cross-sectional view showing a further enlarged view of the electronic device of FIG. 2. FIG. [Figure 4B] 4B is an enlarged cross-sectional view of the second electrode of FIG. 4A. FIG. [Figure 4C] FIG. 10 is a diagram for explaining a method for calculating the average value of the thickness of the second electrode. [Figure 4D] FIG. 4 is a plan view showing an example of a second electrode. [Figure 5] FIG. 2 is a cross-sectional view showing an example of a substrate on which a first electrode is formed. [Figure 6] FIG. 2 is a plan view showing an example of a substrate on which a first electrode is formed. [Figure 7] FIG. 2 is a cross-sectional view showing an example of a substrate on which a first electrode and an organic layer are formed. [Figure 8] FIG. 2 is a plan view showing an example of a substrate on which a first electrode and an organic layer are formed. [Figure 9] FIG. 4 is a cross-sectional view showing an example of a step of forming a first organic layer. [Figure 10] FIG. 4 is a cross-sectional view showing an example of a step of forming a second organic layer. [Figure 11] FIG. 4 is a cross-sectional view showing an example of a step of forming a second organic layer. [Figure 12] FIG. 10 is a cross-sectional view showing an example of a step of forming a second electrode. [Figure 13] FIG. 10 is a plan view showing an example of a step of forming a second electrode. [Figure 14] FIG. 10 is a cross-sectional view showing an example of a step of partially removing the second electrode. [Figure 15] FIG. 10 is a diagram showing an example of a step of irradiating a second electrode with a laser. [Figure 16] FIG. 1 illustrates an example of a laser including pulses. [Figure 17] FIG. 1 is a cross-sectional view illustrating an example of an electronic device according to an embodiment of the present disclosure. [Figure 18A] FIG. 18 is a cross-sectional view showing an element of the electronic device of FIG. 17 on a further enlarged scale. [Figure 18B] FIG. 18 is a cross-sectional view showing an example of an element of the electronic device of FIG. [Figure 19] FIG. 2 is a cross-sectional view showing an example of a substrate on which an insulating layer and a first electrode are formed. [Figure 20] FIG. 2 is a plan view showing an example of a substrate on which an insulating layer and a first electrode are formed. [Figure 21] FIG. 2 is a plan view showing an example of a substrate on which an insulating layer, a first electrode, and an organic layer are formed. [Figure 22] FIG. 10 is a cross-sectional view showing an example of a step of forming a second electrode. [Figure 23] FIG. 10 is a cross-sectional view showing an example of a step of partially removing the second electrode. [Figure 24A] FIG. 1 is a cross-sectional view illustrating an example of an electronic device according to an embodiment of the present disclosure. [Figure 24B] FIG. 1 is a cross-sectional view illustrating an example of an electronic device according to an embodiment of the present disclosure. [Figure 25] FIG. 1 is a cross-sectional view illustrating an example of an electronic device according to an embodiment of the present disclosure. [Figure 26] FIG. 2 is a cross-sectional view showing an example of a substrate on which an insulating layer and a first electrode are formed. [Figure 27] FIG. 10 is a cross-sectional view showing an example of a step of forming a second electrode. [Figure 28] FIG. 10 is a cross-sectional view showing an example of a step of partially removing the second electrode. [Figure 29] FIG. 2 is a plan view showing an example of a first vapor deposition mask. [Figure 30] FIG. 4 is a plan view showing an example of a second vapor deposition mask. [Figure 31] FIG. 10 is a plan view showing an example of a third vapor deposition mask. [Figure 32] FIG. 1 is a plan view showing an example of a mask stack. [Figure 33] FIG. 32 is a plan view showing an organic layer formed by using the deposition masks of FIGS. 29 to 31. [Figure 34] 34 is a plan view showing an example of a second electrode formed on the organic layer of FIG. 33. FIG. [Figure 35] FIG. 4 is a plan view showing an example of a second electrode opening formed in the second electrode. [Figure 36] FIG. 36 is a cross-sectional view of the electronic device of FIG. 35 taken along line XXXVI-XXXVI. [Figure 37] FIG. 1 is a plan view illustrating an example of an electronic device according to an embodiment of the present disclosure. [Figure 38] 38 is an enlarged plan view of the second display area of ​​the electronic device of FIG. 37. FIG. [Figure 39] FIG. 2 is a plan view showing an example of a first display region. [Figure 40]FIG. 2 is a plan view showing an example of a second display area. [Figure 41] FIG. 10 is a plan view showing an example of an organic layer in the second display region. DETAILED DESCRIPTION OF THE INVENTION

[0009] In this specification and drawings, unless otherwise specified, terms that refer to a material that forms the basis of a certain configuration, such as "substrate," "base material," "plate," "sheet," and "film," are not to be distinguished from one another solely on the basis of differences in name.

[0010] In this specification and drawings, unless otherwise specified, terms that specify shapes, geometric conditions, and their degrees, such as "parallel" and "orthogonal," and values ​​of lengths and angles, are not bound by strict meanings, but are interpreted to include a range within which similar functions can be expected.

[0011] In this specification and drawings, unless otherwise specified, when a certain component, such as a certain region, is referred to as "above" or "below," "upper" or "lower," or "upward" or "below" another component, such as another region, this includes cases where the component is in direct contact with the other component. It also includes cases where another component is contained between the component and the other component, i.e., cases where the components are in indirectly in contact. Unless otherwise specified, the terms "above," "upper side," or "upper," or "under," "lower side," or "lower" may be used in the reversed up-down direction.

[0012] In this specification and drawings, unless otherwise specified, the same or similar symbols are used for the same parts or parts having similar functions, and repeated explanations may be omitted. For convenience of explanation, the dimensional ratios of the drawings may differ from the actual ratios, and some components may be omitted from the drawings.

[0013] In this specification and drawings, unless otherwise specified, one embodiment of this specification may be combined with other embodiments to the extent that no contradiction occurs. Other embodiments may also be combined with each other to the extent that no contradiction occurs.

[0014] In the present specification and drawings, unless otherwise specified, when a plurality of steps are disclosed in a method such as a manufacturing method, other steps that are not disclosed may be performed between the disclosed steps. The order of the disclosed steps is arbitrary within the range that does not cause a contradiction.

[0015] In this specification and drawings, unless otherwise specified, a numerical range expressed by the symbol "to" includes the numerical values ​​before and after the symbol "to." For example, the numerical range defined by the expression "34 to 38 mass%" is the same as the numerical range defined by the expression "34 mass% or more and 38 mass% or less."

[0016] Hereinafter, an embodiment of the present disclosure will be described in detail with reference to the drawings. Note that the embodiment described below is an example of an embodiment of the present disclosure, and the present disclosure should not be interpreted as being limited to only these embodiments.

[0017] A first aspect of the present disclosure is a method for manufacturing an electronic device, comprising: a preparation step of preparing a laminate including a substrate having a first surface and a second surface opposite to the first surface, two or more first electrodes on the first surface of the substrate, and an organic layer on the first electrodes; a second electrode forming step of forming a second electrode on the organic layer so as to overlap two or more of the first electrodes when viewed along a normal direction of the first surface of the substrate; a removing step of partially removing a region of the second electrode that does not overlap with the first electrode in a plan view.

[0018] A second aspect of the present disclosure is a method for manufacturing an electronic device according to the first aspect described above, wherein the removing step may partially remove a region of the second electrode that is located between the first electrodes in a planar view.

[0019] A third aspect of the present disclosure is a method for manufacturing an electronic device according to either the first aspect or the second aspect described above, wherein the removal step may include an irradiation step of irradiating the second electrode with a laser to form a second electrode opening.

[0020] A fourth aspect of the present disclosure is a method for manufacturing an electronic device according to the third aspect described above, wherein the irradiation step may include a step of irradiating the second electrode with a laser through a through hole in a laser mask to form a second electrode opening.

[0021] A fifth aspect of the present disclosure relates to the method for manufacturing an electronic device according to the third aspect or the fourth aspect, wherein the second electrode may include a side surface facing the second electrode opening; The height of the side surface of the second electrode may be greater than the thickness of a region of the second electrode that overlaps with the first electrode in a plan view.

[0022] A sixth aspect of the present disclosure is a method for manufacturing an electronic device according to the fifth aspect described above, wherein the height of the side surface of the second electrode may be 1.1 times or more the thickness of the region of the second electrode that overlaps the first electrode in a planar view.

[0023] A seventh aspect of the present disclosure is a method for manufacturing an electronic device according to each of the third to sixth aspects described above, wherein the manufacturing method may include a step of forming a protective layer that overlaps the second electrode and the second electrode opening in a planar view.

[0024] An eighth aspect of the present disclosure is a method for manufacturing an electronic device according to each of the third to seventh aspects described above, wherein the irradiation step may include a step of irradiating a laser onto a region of the organic layer that overlaps the second electrode opening in a planar view to form an organic layer opening.

[0025] A ninth aspect of the present disclosure may be such that, in the method for manufacturing an electronic device according to the eighth aspect described above, a width of a side surface of the organic layer facing the organic layer opening is 2.0 μm or less.

[0026] A tenth aspect of the present disclosure is directed to a method for manufacturing an electronic device according to each of the first to ninth aspects described above, wherein the organic layer of the laminate may include a first organic layer and a second organic layer that overlap each other at a position that does not overlap the first electrode in a plan view; The removing step may include the step of at least partially removing the first organic layer and the second organic layer that overlap each other.

[0027] An eleventh aspect of the present disclosure is a method for manufacturing an electronic device according to each of the first to seventh aspects described above, wherein the laminate may include an organic layer opening located between two adjacent organic layers in a planar view, the second electrode forming step may form the second electrode so that the second electrode overlaps the organic layer and the organic layer opening in a planar view, and the removal step may partially remove a region of the second electrode that overlaps the organic layer opening in a planar view.

[0028] A twelfth aspect of the present disclosure is that, in the method for manufacturing an electronic device according to each of the first aspect to the eleventh aspect described above, the laminate may include an insulating layer located between the first electrodes in a planar view.

[0029] A thirteenth aspect of the present disclosure is the method for manufacturing an electronic device according to the twelfth aspect, wherein the removing step may include a step of partially removing the insulating layer.

[0030] A fourteenth aspect of the present disclosure is a method for manufacturing an electronic device according to each of the first to thirteenth aspects described above, wherein the preparation step may include a step of depositing a material for the organic layer onto the first electrode through a through-hole in a deposition mask.

[0031] A fifteenth aspect of the present disclosure is an electronic device, comprising: a substrate having a first surface and a second surface opposite the first surface; two or more first electrodes on the first surface of the substrate; an organic layer on the first electrode; a second electrode located on the organic layer and extending so as to overlap two or more of the first electrodes in a plan view; the second electrode includes a second electrode opening that does not overlap the first electrode in a plan view and a side surface facing the second electrode opening, In the electronic device, the height of the side surface of the second electrode is greater than the average thickness of a region of the second electrode that overlaps with the first electrode in a plan view.

[0032] A sixteenth aspect of the present disclosure is an electronic device according to the fifteenth aspect described above, wherein the height of the side surface of the second electrode may be 1.1 times or more the average thickness of the area overlapping the first electrode in a planar view.

[0033] A seventeenth aspect of the present disclosure is an electronic device according to either the fifteenth aspect or the sixteenth aspect described above, wherein the second electrode opening may be surrounded by the second electrode in a plan view.

[0034] An 18th aspect of the present disclosure is that, in an electronic device according to each of the 15th to 17th aspects described above, the upper end of the side surface of the second electrode may have an outline that surrounds the second electrode opening in a planar view.

[0035] A 19th aspect of the present disclosure is an electronic device according to the 18th aspect described above, wherein the second electrode may include a base having an outline that surrounds the outline of the upper end of the side surface of the second electrode in a planar view, and the thickness of the second electrode at the base may be 1.05 times the average thickness of the area overlapping the first electrode in a planar view.

[0036] A twentieth aspect of the present disclosure is an electronic device according to each of the fifteenth to nineteenth aspects described above, wherein the electronic device may include a protective layer that overlaps the second electrode and the second electrode opening in a planar view.

[0037] A 21st aspect of the present disclosure is that, in the electronic device according to the 20th aspect described above, the surface of the protective layer overlapping the second electrode opening may be located between the surface of the second electrode overlapping the first electrode and the first surface in the thickness direction of the substrate.

[0038] A 22nd aspect of the present disclosure is that, in the electronic device according to the 20th aspect described above, the surface of the second electrode overlapping the first electrode may be located between the surface of the protective layer overlapping the second electrode opening and the first surface in the thickness direction of the substrate.

[0039] A 23rd aspect of the present disclosure is an electronic device according to each of the 15th to 22nd aspects described above, wherein the organic layer may include an organic layer opening that overlaps the second electrode opening in a planar view.

[0040] A twenty-fourth aspect of the present disclosure is the electronic device according to the twenty-third aspect, wherein the organic layer may include a side surface facing the organic layer opening; An upper end of the side surface of the organic layer may be in contact with a lower end of the side surface of the second electrode.

[0041] A twenty-fifth aspect of the present disclosure may be such that, in the electronic device according to the twenty-fourth aspect described above, the width of the side surface of the organic layer is 2.0 μm or less.

[0042] A 26th aspect of the present disclosure is an electronic device according to each of the 15th to 22nd aspects described above, wherein the organic layer may include an organic layer opening that overlaps a portion of the second electrode and the second electrode opening in a planar view.

[0043] A 27th aspect of the present disclosure is an electronic device according to the 26th aspect described above, wherein the organic layer may include a side surface facing the organic layer opening, and the second electrode may overlap the side surface of the organic layer in a planar view.

[0044] A 28th aspect of the present disclosure is an electronic device according to each of the 15th to 27th aspects described above, which may include an insulating layer first opening that overlaps the first electrode in a planar view, and may be provided with an insulating layer located between the first surface of the substrate and the organic layer in a direction normal to the first surface of the substrate.

[0045] A 29th aspect of the present disclosure is an electronic device according to the 28th aspect described above, wherein the insulating layer may include an insulating layer second opening located between the first electrodes in a planar view and overlapping the second electrode opening.

[0046] A 30th aspect of the present disclosure is a deposition mask group, Equipped with two or more deposition masks, the deposition mask includes a shielding region and a through hole; A mask stack in which two or more deposition masks are stacked is a deposition mask group that includes overlapping shielding regions where the shielding regions of the deposition masks overlap each other.

[0047] Hereinafter, an embodiment of the present disclosure will be described in detail with reference to the drawings. Note that the embodiment described below is an example of an embodiment of the present disclosure, and the present disclosure should not be interpreted as being limited to only these embodiments.

[0048] FIG. 1 is a cross-sectional view showing an example of an electronic device 10. The electronic device 10 may include a substrate 15 including a first surface 16 and a second surface 17, and a plurality of elements 20 arranged along the in-plane direction of the first surface 16 of the substrate 15. Although not shown, the elements 20 may also be arranged in the depth direction of FIG. 1. The elements 20 may include two or more first electrodes 30 located on the first surface 16, two or more organic layers 40 located on the first electrodes 30, and a second electrode 50 located on the organic layers 40. The first electrode 30 may be an anode, and the second electrode 50 may be a cathode. Alternatively, the first electrode 30 may be a cathode, and the second electrode 50 may be an anode.

[0049] The electronic device 10 may be an active matrix type. For example, although not shown, the electronic device 10 may include a switch electrically connected to each of the multiple elements 20. The switch is, for example, a transistor. The switch can control the ON / OFF of a voltage applied to the element 20 or a current flowing through the element 20.

[0050] The substrate 15 may be an insulating plate-like member. The substrate 15 is preferably transparent to allow light to pass through. The substrate 15 is made of, for example, glass. Although not shown, a wiring layer may be located between the substrate 15 and the element 20. The wiring layer can transmit electrical signals, power, etc. to the element 20.

[0051] The element 20 is configured to achieve some function by applying a voltage between the first electrode 30 and the second electrode 50, or by causing a current to flow between the first electrode 30 and the second electrode 50.

[0052] The first electrode 30 includes a conductive material. For example, the first electrode 30 includes a metal, a conductive metal oxide, or other inorganic material. The first electrode 30 may include a transparent and conductive metal oxide such as indium tin oxide.

[0053] The organic layer 40 contains an organic material. When a current is applied to the organic layer 40, the organic layer 40 can perform some function. Applying a current means that a voltage is applied to the organic layer 40 or that a current flows through the organic layer 40. The organic layer 40 can be a light-emitting layer that emits light when a current is applied, or a layer whose light transmittance or refractive index changes when a current is applied. The organic layer 40 may contain an organic semiconductor material. When the organic layer 40 is a light-emitting layer, when a current flows through the organic layer 40 by applying a voltage between the first electrode 30 and the second electrode 50, light is emitted from the organic layer 40 and extracted to the outside from the second electrode 50 side or the first electrode 30 side.

[0054] When the organic layer 40 includes a light-emitting layer that emits light when a current is applied, the organic layer 40 may further include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and the like. For example, when the first electrode 30 is an anode, the organic layer 40 may have a hole injection transport layer between the light-emitting layer and the first electrode 30. The hole injection transport layer may be a hole injection layer having a hole injection function, a hole transport layer having a hole transport function, or a layer having both a hole injection function and a hole transport function. The hole injection transport layer may also be a layer formed by laminating a hole injection layer and a hole transport layer. When the second electrode 50 is a cathode, the organic layer 40 may have an electron injection transport layer between the light-emitting layer and the second electrode 50. The electron injection transport layer may be an electron injection layer having an electron injection function, an electron transport layer having an electron transport function, or a layer having both an electron injection function and an electron transport function. The electron injection transport layer may also be a layer formed by laminating an electron injection layer and an electron transport layer.

[0055] The light-emitting layer contains a light-emitting material and may contain an additive to improve leveling properties.

[0056] As the light-emitting material, known materials can be used, such as dye-based materials, metal complex-based materials, and polymer-based materials. Examples of dye-based materials that can be used include cyclopentadiene derivatives, tetraphenylbutadiene derivatives, triphenylamine derivatives, oxadiazole derivatives, pyrazoloquinoline derivatives, distyrylbenzene derivatives, distyrylarylene derivatives, silole derivatives, thiophene ring compounds, pyridine ring compounds, perinone derivatives, perylene derivatives, oligothiophene derivatives, oxadiazole dimers, and pyrazoline dimers. Examples of metal complex-based materials that can be used include aluminum quinolinol complexes, benzoquinolinol beryllium complexes, benzoxazole zinc complexes, benzothiazole zinc complexes, azomethyl zinc complexes, porphyrin zinc complexes, and europium complexes, which have a central metal such as Al, Zn, or Be, or a rare earth metal such as Tb, Eu, or Dy, and a ligand having an oxadiazole, thiadiazole, phenylpyridine, phenylbenzimidazole, or quinoline structure. Examples of polymeric materials that can be used include polyparaphenylene vinylene derivatives, polythiophene derivatives, polyparaphenylene derivatives, polysilane derivatives, polyacetylene derivatives, polyvinylcarbazole derivatives, polyfluorene derivatives, polyquinoxaline derivatives, and copolymers thereof.

[0057] The light-emitting layer may contain a dopant for purposes such as improving light-emitting efficiency or changing the light-emitting wavelength. Examples of the dopant that can be used include perylene derivatives, coumarin derivatives, rubrene derivatives, quinacridone derivatives, squarium derivatives, porphyrin derivatives, styryl dyes, tetracene derivatives, pyrazoline derivatives, decacyclene, phenoxazone, quinoxaline derivatives, carbazole derivatives, and fluorene derivatives. Furthermore, the dopant may be an organometallic complex that has a heavy metal ion such as platinum or iridium at its center and exhibits phosphorescence. One or more dopants may be used alone or in combination.

[0058] Furthermore, as the light-emitting material and the dopant, for example, the materials described in

[0094] to

[0099] of JP-A No. 2010-272891 and

[0053] to

[0057] of WO 2012 / 132126 can also be used.

[0059] The thickness of the light-emitting layer is not particularly limited as long as it is thick enough to provide a site for recombination of electrons and holes and thereby exhibit the function of emitting light, and can be, for example, 1 nm or more and 500 nm or less.

[0060] Known hole injection and transport materials can be used in the hole injection and transport layer. For example, triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives, pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, stilbene derivatives, silazane derivatives, polythiophene derivatives, polyaniline derivatives, polypyrrole derivatives, phenylamine derivatives, anthracene derivatives, carbazole derivatives, fluorene derivatives, distyrylbenzene derivatives, polyphenylenevinylene derivatives, porphyrin derivatives, styrylamine derivatives, etc. Other examples include spiro compounds, phthalocyanine compounds, and metal oxides. In addition, for example, compounds described in JP 2011-119681 A, WO 2012 / 018082 A, JP 2012-069963 A, and WO 2012 / 132126, paragraph

[0106] can also be appropriately selected and used.

[0061] When the hole injection transport layer is a laminate of a hole injection layer and a hole transport layer, the hole injection layer may contain additive A, the hole transport layer may contain additive A, or the hole injection layer and the hole transport layer may contain additive A. Additive A may be a low molecular weight compound or a high molecular weight compound. Specifically, a fluorine-based compound, an ester-based compound, a hydrocarbon-based compound, etc. may be used.

[0062] Known materials can be used as the electron injection / transport material for the electron injection / transport layer. Examples of usable materials include alkali metals, alkali metal alloys, alkali metal halides, alkaline earth metals, alkaline earth metal halides, alkaline earth metal oxides, organic alkali metal complexes, magnesium halides or oxides, and aluminum oxide. Examples of usable electron injection / transport materials include bathocuproine, bathophenanthroline, phenanthroline derivatives, triazole derivatives, oxadiazole derivatives, pyridine derivatives, nitro-substituted fluorene derivatives, anthraquinodimethane derivatives, diphenylquinone derivatives, thiopyran dioxide derivatives, aromatic ring tetracarboxylic acid anhydrides such as naphthalene and perylene, carbodiimides, fluorenylidenemethane derivatives, anthraquinodimethane derivatives, anthrone derivatives, quinoxaline derivatives, metal complexes such as quinolinol complexes, phthalocyanine compounds, and distyrylpyrazine derivatives.

[0063] Alternatively, an electron-transporting organic material may be doped with an alkali metal or alkaline earth metal to form a metal-doped layer, which may serve as the electron injection / transport layer. Examples of electron-transporting organic materials that can be used include bathocuproine, bathophenanthroline, phenanthroline derivatives, triazole derivatives, oxadiazole derivatives, pyridine derivatives, and metal complexes such as tris(8-quinolinolato)aluminum (Alq3), as well as polymer derivatives thereof. Examples of metals that can be used for doping include Li, Cs, Ba, and Sr.

[0064] The second electrode 50 includes a conductive material such as a metal. The second electrode 50 is formed on the organic layer 40 by a vapor deposition method using a vapor deposition mask, which will be described later. Examples of materials that can be used to form the second electrode 50 include platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, and magnesium. Examples include magnesium, chromium, carbon, and alloys thereof.

[0065] When electronic device 10 is an organic electroluminescent display, elements 20 are pixels and organic layer 40 includes a light-emitting layer.

[0066] 1, a plurality of elements 20 corresponding to a plurality of electronic devices 10 may be provided on one substrate 15. When the electronic device 10 is a display device such as an organic EL display device, one electronic device 10 corresponds to one screen.

[0067] Fig. 2 is an enlarged cross-sectional view of the electronic device 10, and Fig. 3 is an enlarged plan view of the electronic device 10. Fig. 2 corresponds to a cross-sectional view of the electronic device 10 shown in Fig. 3 taken along line II-II.

[0068] 2 and 3, the organic layer 40 may be a first organic layer 40A, a second organic layer 40B, or a third organic layer 40C. The first organic layer 40A, the second organic layer 40B, and the third organic layer 40C are, for example, a red light-emitting layer, a blue light-emitting layer, and a green light-emitting layer. In the following description, when describing the organic layer configuration common to the first organic layer 40A, the second organic layer 40B, and the third organic layer 40C, the term and symbol "organic layer 40" are used.

[0069] 2, the organic layer 40 may be located not only in a region overlapping with the first electrode 30 when viewed along the normal direction to the first surface 16 of the substrate 15, but also in a region not overlapping with the first electrode 30. Similarly, the second electrode 50 may be located not only in a region overlapping with the first electrode 30 when viewed along the normal direction to the first surface 16 of the substrate 15, but also in a region not overlapping with the first electrode 30. In the following description, the overlapping of two components when viewed along the normal direction to the surface of a plate-like member such as the substrate 15 may also be simply referred to as "overlapping." Furthermore, the view along the normal direction to the surface of a plate-like member such as the substrate 15 may also be simply referred to as "planar view."

[0070] In Fig. 3, the organic layer 40 covered by the second electrode 50 in a plan view and the first electrode 30 covered by the organic layer 40 in a plan view are each represented by a dotted line. As shown in Fig. 3, the plurality of first electrodes 30 and the organic layers 40 may be arranged along a third direction D3 and a fourth direction D4 intersecting the third direction D3. The fourth direction D4 may be perpendicular to the third direction D3. The third direction D3 may be a direction that forms an angle of 45° with respect to the first direction D1. The fourth direction D4 may also be a direction that forms an angle of 45° with respect to the second direction D2. The fourth direction D4 may be perpendicular to the third direction D3.

[0071] The first direction D1 and the second direction D2 may be directions in which the outer edge of the substrate 15 extends. The second direction D2 may be perpendicular to the first direction D1.

[0072] As shown in FIG. 3 , the second electrode 50 may extend so as to overlap two or more first electrodes 30. In this case, the second electrode 50 can function as a common electrode that conducts electricity to multiple organic layers 40. The second electrode 50 may also include a second electrode opening 51 that does not overlap the first electrode 30 in a planar view. The second electrode opening 51 may be surrounded by the second electrode 50 in a planar view. The second electrode opening 51 may be located between two adjacent first electrodes 30 in a planar view. For example, the second electrode opening 51 may be located between two adjacent first electrodes 30 in a first direction D1 in a planar view. The second electrode opening 51 may also be located between two adjacent first electrodes 30 in a second direction D2 in a planar view.

[0073] By including the second electrode opening 51 in the second electrode 50, light can more easily pass through the electronic device 10 than if the second electrode 50 extended over the entire first surface 16. This can increase the transmittance of the entire electronic device 10.

[0074] 2 and 3, the organic layer 40 may include an organic layer opening 41 that overlaps the second electrode opening 51 in a plan view. A portion of light passes through the organic layer opening 41, thereby further increasing the transmittance of the entire electronic device 10. Like the second electrode opening 51, the organic layer opening 41 may be located between two first electrodes 30 that are adjacent to each other in the first direction D1 in a plan view. Similarly to the second electrode opening 51, the organic layer opening 41 may be located between two first electrodes 30 that are adjacent to each other in the second direction D2 in a plan view.

[0075] 4A is a cross-sectional view showing a further enlargement of the electronic device 10 of FIG. 2. The second electrode 50 includes a side surface 52 facing the second electrode opening 51. Similarly, the organic layer 40 includes a side surface 42 facing the organic layer opening 41. As shown in FIG. 4A, an upper end 43 of the side surface 42 of the organic layer 40 may be in contact with a lower end 54 of the side surface 52 of the second electrode 50. This relationship between the side surfaces 42 and 52 can be achieved when the organic layer opening 41 and the second electrode opening 51 are formed by laser processing.

[0076] 4B is an enlarged cross-sectional view of the second electrode 50 of FIG. 4A. As shown in FIGS. 4A and 4B, the upper end 53 of the side surface 52 of the second electrode 50 may be raised compared to the surrounding second electrode 50. Such a raised portion may be caused by melting the second electrode 50 during laser processing. The raised upper end 53 of the side surface 52 of the second electrode 50 increases the height of the side surface 52 of the second electrode 50, thereby reducing the electrical resistance of the second electrode 50.

[0077] 4A and 4B, the symbol t1 represents the height of the side surface 52 of the second electrode 50. The symbol t2 represents the average thickness of the region of the second electrode 50 that overlaps with the first electrode 30 in a plan view. The height t1 is the distance between the upper end 53 and the lower end 54 of the side surface 52 in the normal direction of the first surface 16 of the substrate 15. The height t1 of the side surface 52 and the thickness of the second electrode 50 are calculated based on an image of the cross section of the electronic device 10. The image of the cross section is obtained by observing the cross section of the electronic device 10 using a scanning electron microscope.

[0078] A method for calculating the average thickness t2 of the second electrode 50 will be described with reference to FIG. 4C . The average thickness t2 is calculated by averaging the thicknesses t21, t22, and t23. The thickness t21 is the thickness of the second electrode 50 that overlaps the center position of the first electrode 30 in the in-plane direction of the first surface 16. In FIG. 4C , the line that passes through the center position of the first electrode 30 and extends in the thickness direction of the substrate 15 is represented by the symbol Lc. The thicknesses t22 and t23 are the thicknesses of the second electrode 50 at intermediate positions between the end 30a of the first electrode 30 and the line Lc in the in-plane direction of the first surface 16.

[0079] The height t1 of the side surface 52 may be greater than the average thickness t2 of the second electrode 50. That is, t1 / t2 may be greater than 1.0. The range of t1 / t2 may be defined by a first group consisting of 1.1, 1.2, 1.3, and 1.4, and / or a second group consisting of 1.5, 1.6, 1.8, and 2.0. The lower limit of the range of t1 / t2 may be defined by any one of the values ​​included in the first group. For example, the lower limit of the range of t1 / t2 may be 1.1 or greater, 1.2 or greater, 1.3 or greater, or 1.4 or greater. The upper limit of the range of t1 / t2 may be defined by any one of the values ​​included in the second group. For example, the upper limit of the range of t1 / t2 may be 1.5 or less, 1.6 or less, 1.8 or less, or 2.0 or less.

[0080] The range of t1 / t2 may be determined by a combination of any one of the values ​​in the first group described above with any one of the values ​​in the second group described above, such as 1.1 to 2.0, 1.2 to 1.8, 1.3 to 1.6, or 1.4 to 1.5. The range of t1 / t2 may also be determined by a combination of any two of the values ​​in the first group described above, such as 1.1 to 1.4, 1.1 to 1.3, 1.2 to 1.4, or 1.2 to 1.3. The range of t1 / t2 may also be determined by a combination of any two of the values ​​in the second group described above, such as 1.5 to 2.0, 1.5 to 1.8, 1.6 to 2.0, or 1.6 to 1.8.

[0081] When forming the organic layer opening 41 in the organic layer 40 by laser processing, the angle that the side surface 42 facing the organic layer opening 41 makes with respect to the first surface 16 of the substrate 15 can be adjusted by adjusting the direction of light irradiation. Therefore, for example, the organic layer opening 41 can be formed so that the side surface 42 rises steeply. In this case, the width u1 of the side surface 42 of the organic layer 40 is smaller than the width of the side surface of an organic layer formed by vapor deposition. Because the side surface 42 of the organic layer 40 rises steeply, the variation in the effective area of ​​each organic layer 40 is reduced. This reduces the variation in the characteristics of each organic layer 40. For example, if the organic layer 40 is an emissive layer, the variation in the luminous intensity of light emitted from each emissive layer is reduced. This reduces the variation in the luminance distribution of the electronic device 10 depending on the position within the plane of the electronic device 10. The "effective area of ​​the organic layer 40" refers to the area of ​​the portion of the organic layer 40 that has a thickness necessary for the organic layer 40 to function and that overlaps with the first electrode 30 and the second electrode 50 in a planar view.

[0082] In the present application, the width u1 of the side surface 52 is defined as the distance in the in-plane direction of the first surface 16 from the position where the height of the side surface 52 is t4 to the position where the height of the side surface 52 is t5. t4 is 0.2 × t3, and t5 is 0.8 × t3. The symbol t3 represents the average thickness of the region of the organic layer 40 located between the side surface 42 and the end 31 of the first electrode 30 in a planar view. The thickness of the organic layer 40, like the thickness of the second electrode 50, is calculated based on an image of a cross section of the electronic device 10.

[0083] The range of the width u1 of the side surface 42 of the organic layer 40 may be defined by a first group consisting of 0.1 μm, 0.2 μm, 0.3 μm, and 0.4 μm, and / or a second group consisting of 0.5 μm, 1.0 μm, 1.5 μm, and 2.0 μm. The lower limit of the range of the width u1 of the side surface 42 may be defined by any one of the values ​​included in the first group. For example, the lower limit of the range of the width u1 of the side surface 42 may be 0.1 μm or more, 0.2 μm or more, 0.3 μm or more, or 0.4 μm or more. The upper limit of the range of the width u1 of the side surface 42 may be defined by any one of the values ​​included in the second group. For example, the upper limit of the range of the width u1 of the side surface 42 may be 0.5 μm or less, 1.0 μm or less, 1.5 μm or less, or 2.0 μm or less.

[0084] The range of the width u1 of the side surface 42 of the organic layer 40 may be determined by a combination of any one of the values ​​included in the first group described above with any one of the values ​​included in the second group described above, and may be, for example, 0.1 μm to 2.0 μm, 0.2 μm to 1.5 μm, 0.3 μm to 1.0 μm, or 0.4 μm to 0.5 μm. The range of the width u1 of the side surface 42 may also be determined by a combination of any two of the values ​​included in the first group described above, and may be, for example, 0.1 μm to 0.4 μm, 0.1 μm to 0.3 μm, 0.2 μm to 0.4 μm, or 0.2 μm to 0.3 μm. In addition, the range of width u1 of side 42 may be determined by a combination of any two of the values ​​included in the second group described above, and may be, for example, 0.5 μm or more and 2.0 μm or less, 0.5 μm or more and 1.5 μm or less, 1.0 μm or more and 2.0 μm or less, or 1.0 μm or more and 1.5 μm or less.

[0085] When the side surface 52 of the second electrode 50 is raised, as shown in FIGS. 4A and 4B , the second electrode 50 includes a base 55 located outside the upper end 53. The thickness of the second electrode 50 decreases from the upper end 53 toward the outside. The "outside" refers to the side away from the center of the second electrode opening 51 in a plan view. The base 55 is a position where the thickness of the second electrode 50 is sufficiently smaller than the height t1 of the side surface 52. For example, the thickness t6 of the second electrode 50 at the base 55 is 1.05 times the average thickness t2 of the second electrode 50.

[0086] 4D is a plan view showing an example of the second electrode 50. Reference numeral 51a denotes the outer edge of the second electrode opening 51 in plan view. The upper end 53 of the side surface 52 of the second electrode 50 may have a contour that surrounds the second electrode opening 51 in plan view. The base 55 may have a contour that surrounds the contour of the upper end 53 in plan view.

[0087] The symbol u2 represents the distance from the outer edge 51a of the second electrode opening 51 to the base 55 in a planar view. The distance u2 may be, for example, 0.05 μm or more, 0.1 μm or more, or 0.5 μm or more. The distance u2 may be, for example, 2.0 μm or less, 3.0 μm or less, or 5.0 μm or less. The range of the distance u2 may be determined by a first group consisting of 0.05 μm, 0.1 μm, and 0.5 μm, and / or a second group consisting of 2.0 μm, 3.0 μm, and 5.0 μm. The range of the distance u2 may be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the distance u2 may be determined by a combination of any two of the values ​​included in the first group. The range of the distance u2 may be determined by a combination of any two of the values ​​included in the second group. For example, it may be 0.05 μm or more and 5.0 μm or less, 0.05 μm or more and 3.0 μm or less, 0.05 μm or more and 2.0 μm or less, 0.05 μm or more and 0.5 μm or less, 0.05 μm or more and 0.1 μm or less, 0.1 μm or more and 5.0 μm or less, 0.1 μm or more and 3.0 μm or less, 0.1 μm or more and 2.0 μm or less, 0.1 μm or more and 0.5 μm or less, 0.5 μm or more and 5.0 μm or less, 0.5 μm or more and 3.0 μm or less, 0.5 μm or more and 2.0 μm or less, 2.0 μm or more and 5.0 μm or less, 2.0 μm or more and 3.0 μm or more and 5.0 μm or less.

[0088] The dimensions of the components of the electronic device 10, the distances between the components, etc. can be measured by observing an image of a cross section of the electronic device 10 using a scanning electron microscope.

[0089] The second electrode 50 may include a uniform region 56. The uniform region 56 is, for example, a region having a thickness equal to or less than 1.05 times the average value t2. The uniform region 56 extends to surround the second electrode opening 51 in a plan view. The uniform region 56 may extend outside the base 55. The uniform region 56 may occupy most of the second electrode 50. The occupancy rate of the uniform region 56 in the second electrode 50 is, for example, 90% or more, or alternatively, 95% or more, 98% or more, or even 99% or more. When most of the second electrode 50 is the uniform region 56, light is more likely to transmit through the second electrode 50. This can increase the transmittance of the electronic device 10.

[0090] Next, an example of a method for manufacturing the above-mentioned electronic device 10 will be described.

[0091] First, a substrate 15 on which a first electrode 30 is formed is prepared. Figures 5 and 6 are a cross-sectional view and a plan view showing the substrate 15 on which the first electrode 30 is formed. Figure 5 corresponds to a cross-sectional view of the substrate 15 taken along line VV shown in Figure 6. The first electrode 30 is formed, for example, by forming a conductive layer that constitutes the first electrode 30 on the substrate 15 by a sputtering method or the like, and then patterning the conductive layer by a photolithography method or the like.

[0092] Next, an organic layer formation step is performed to form an organic layer 40 on the first electrode 30. FIGS. 7 and 8 are a cross-sectional view and a plan view showing the substrate 15 on which the first electrode 30 and the organic layer 40 have been formed. FIG. 7 corresponds to a cross-sectional view of the substrate 15 taken along line VII-VII in FIG. 8. The organic layer 40 is formed, for example, by depositing an organic material or the like on the substrate 15 and the first electrode 30 by a vapor deposition method using a vapor deposition mask having through-holes corresponding to the organic layer 40. In this manner, a laminate 18 can be prepared, including the substrate 15, two or more first electrodes 30 on the first surface 16 of the substrate 15, and the organic layer 40 on the first electrode 30.

[0093] 8, the plurality of first organic layers 40A may be aligned along a third direction D3 and a fourth direction D4 intersecting the third direction D3. Similar to the first organic layers 40A, the plurality of second organic layers 40B may also be aligned along the third direction D3 and a fourth direction D4 intersecting the third direction D3. The plurality of third organic layers 40C may be aligned along the first direction D1 and the second direction D2.

[0094] FIG. 9 is a cross-sectional view showing an example of a process for forming the first organic layer 40A. First, a first vapor deposition mask 80A including a plurality of through holes 81 is prepared. Next, the first vapor deposition mask 80A and a substrate 15 on which the first electrode 30 is formed are placed face to face. Next, a first vapor deposition process is performed in which a material for the first organic layer 40A is vapor-deposited onto the first electrode 30 through the through holes 81 in the first vapor deposition mask 80A. As shown in FIG. 9, the first organic layer 40A may be formed not only in a region that overlaps with the first electrode 30 in a planar view, but also in a region that does not overlap with the first electrode 30.

[0095] FIG. 10 is a cross-sectional view showing an example of a process for forming the second organic layer 40B. First, a second vapor deposition mask 80B including a plurality of through holes 81 is prepared. Next, the second vapor deposition mask 80B is placed face-to-face with the substrate 15 on which the first electrode 30 and the first organic layer 40A are formed. Next, a second vapor deposition process is performed in which the material of the second organic layer 40B is vapor-deposited onto the first electrode 30 through the through holes 81 in the second vapor deposition mask 80B. As shown in FIG. 10, the second organic layer 40B may be formed not only in a region that overlaps with the first electrode 30 in a plan view, but also in a region that does not overlap with the first electrode 30.

[0096] Although not shown, a third vapor deposition step is performed in which the material of the third organic layer 40C is vapor-deposited on the first electrode 30 through the through-holes of the vapor deposition mask, as in the case of the first organic layer 40A and the second organic layer 40B. In this manner, the organic layer 40 including the first organic layer 40A, the second organic layer 40B, and the third organic layer 40C can be formed on the first electrode 30.

[0097] 11 is a cross-sectional view showing an example of a step of forming the second organic layer 40B. As shown in FIG. 11, the second vapor deposition step may be performed so that a portion of the second organic layer 40B overlaps the first organic layer 40A. In this case, the first organic layer 40A and the second organic layer 40B include an overlapping portion 45 where they partially overlap each other at a position that does not overlap the first electrode 30. Although not shown, the first organic layer 40A and the third organic layer 40C may partially overlap each other. Furthermore, the second organic layer 40B and the third organic layer 40C may partially overlap each other.

[0098] Next, a second electrode forming step is carried out to form the second electrode 50. FIGS. 12 and 13 are a cross-sectional view and a plan view showing an example of the step of forming the second electrode 50. FIG. 12 corresponds to a cross-sectional view of the substrate 15 shown in FIG. 13 taken along line XII-XII. In the second electrode forming step, the second electrode 50 is formed on the organic layer 40 so that the second electrode 50 overlaps two or more first electrodes 30 in a plan view. The second electrode 50 is formed over the entire first surface 16 side of the substrate 15 by, for example, a vapor deposition method.

[0099] The second electrode 50 may be formed over the entire display area of ​​the electronic device 10. The second electrode 50 may include a continuous layer without gaps. The second electrode 50 may consist of a single continuous layer without gaps. The second electrode 50 may be formed by a single vapor deposition process.

[0100] Next, a removal step is performed in which a region of the second electrode 50 that does not overlap the first electrode 30 in a plan view is partially removed to form a second electrode opening 51. The removal step may include an irradiation step of irradiating the second electrode 50 with a laser L1, as shown in FIG. 14 . The irradiation step may include a step of irradiating the second electrode 50 with the laser L1 through a through-hole 91 of a laser mask 90. ​​By irradiating the second electrode 50 with the laser L1, the second electrode opening 51 can be formed in the second electrode 50, as shown in FIG. 2 above. In this manner, an electronic device 10 including a second electrode 50 including the second electrode opening 51 can be obtained.

[0101] The removal step may involve partially removing a region of the second electrode 50 that is located between the first electrodes 30 in a plan view. For example, a laser L1 may be irradiated onto the region of the second electrode 50 that is located between the first electrodes 30 in a plan view.

[0102] The irradiation step may include a step of irradiating a laser beam L1 onto a region of the organic layer 40 that overlaps the second electrode opening 51 after the second electrode opening 51 is formed in the second electrode 50. By irradiating the organic layer 40 with the laser beam L1, it is possible to form an organic layer opening 41 in the organic layer 40 that overlaps the second electrode opening 51, as shown in FIG.

[0103] 11, when the first organic layer 40A and the second organic layer 40B partially overlap each other, the overlapping portion 45 may be irradiated with a laser beam L1. This allows the overlapping portion 45 to be removed.

[0104] Fig. 15 is a diagram showing an example of the irradiation step. In Fig. 15, the region where the second electrode opening 51 is to be formed is indicated by a dotted line. As shown in Fig. 15, the laser spot 92 irradiated onto the second electrode 50 may have a spot diameter r that is smaller than the size of the second electrode opening 51. In this case, the laser may be irradiated onto the region of the second electrode 50 where the second electrode opening 51 is to be formed by scanning the laser light source in the in-plane direction of the first surface 16 of the substrate 15 with a laser mask 90 interposed between the laser light source and the second electrode 50.

[0105] The laser may be, for example, a YAG laser. The light source generating the YAG laser may include an oscillation medium containing a crystal of yttrium, aluminum, and garnet doped with neodymium. In this case, a laser having a wavelength of approximately 1064 nm can be generated as the fundamental wave. Furthermore, by passing the fundamental wave through a nonlinear optical crystal, a second harmonic having a wavelength of approximately 532 nm can be generated. Furthermore, by passing the fundamental wave and the second harmonic through a nonlinear optical crystal, a third harmonic having a wavelength of approximately 355 nm can be generated. The laser irradiated onto the second electrode 50 may include one, two, or three of the fundamental wave, the second harmonic, and the third harmonic. The laser irradiated onto the second electrode 50 may be a laser other than a YAG laser.

[0106] In the irradiation step, the second electrode 50 may be intermittently irradiated with pulses of the laser L1. That is, the laser L1 irradiated to the second electrode 50 may be a laser L1 including pulses obtained by pulse oscillation, rather than continuous light. This makes it easier to control the heat generated in the second electrode 50 due to irradiation with the laser L1. FIG. 16 is a diagram showing an example of the laser L1 including pulses. In FIG. 16, symbol W1 represents the pulse width of the laser L1, symbol W2 represents the pulse period W2 of the laser L1, and symbol P1 represents the peak output of the laser L1. The pulse width W1 is the half-width of the pulse peak.

[0107] In the irradiation process, parameters such as the spot diameter r of the laser L1, the pulse width W1, the pulse period W2, the peak power P1, and the pulse energy may be appropriately adjusted. This allows the degree of protrusion formed on the upper end 53 of the side surface 52 of the second electrode 50 to be adjusted. Also, the width u1 of the side surface 42 of the organic layer 40 can be adjusted.

[0108] The range of the spot diameter r of the laser L1 may be defined by a first group consisting of 2 μm, 5 μm, 10 μm, and 15 μm, and / or a second group consisting of 20 μm, 30 μm, 40 μm, and 50 μm. The lower limit of the range of the spot diameter r may be defined by any one of the values ​​included in the first group. For example, the lower limit of the range of the spot diameter r may be 2 μm or more, 5 μm or more, 10 μm or more, or 15 μm or more. The upper limit of the range of the spot diameter r may be defined by any one of the values ​​included in the second group. For example, the upper limit of the range of the spot diameter r may be 20 μm or less, 30 μm or less, 40 μm or less, or 50 μm or less.

[0109] The range of the spot diameter r of the laser L1 may be determined by a combination of any one of the values ​​in the first group described above with any one of the values ​​in the second group described above, such as 2 μm to 50 μm, 5 μm to 40 μm, 10 μm to 30 μm, or 15 μm to 20 μm. The range of the spot diameter r may also be determined by a combination of any two of the values ​​in the first group described above, such as 2 μm to 15 μm, 2 μm to 10 μm, 5 μm to 15 μm, or 5 μm to 10 μm. The range of the spot diameter r may also be determined by a combination of any two of the values ​​in the second group described above, such as 20 μm to 50 μm, 20 μm to 40 μm, 30 μm to 50 μm, or 30 μm to 40 μm.

[0110] The range of the pulse width W1 of the laser L1 may be defined by a first group consisting of 0.1 ns, 0.2 ns, 0.5 ns, and 1 ns, and / or a second group consisting of 2 ns, 5 ns, 10 ns, and 20 ns. The lower limit of the range of the pulse width W1 may be defined by any one of the values ​​included in the first group. For example, the lower limit of the range of the pulse width W1 may be 0.1 ns or more, 0.2 ns or more, 0.5 ns or more, or 1 ns or more. The upper limit of the range of the pulse width W1 may be defined by any one of the values ​​included in the second group. For example, the upper limit of the range of the pulse width W1 may be 2 ns or less, 5 ns or less, 10 ns or less, or 20 ns or less.

[0111] The range of the pulse width W1 of the laser L1 may be determined by a combination of any one of the values ​​in the first group described above with any one of the values ​​in the second group described above, such as 0.1 ns to 20 ns, 0.2 ns to 10 ns, 0.5 ns to 5 ns, or 1 ns to 2 ns. The range of the pulse width W1 may also be determined by a combination of any two of the values ​​in the first group described above, such as 0.1 ns to 1 ns, 0.1 ns to 0.5 ns, 0.2 ns to 1 ns, or 0.2 ns to 0.5 ns. The range of the pulse width W1 may also be determined by a combination of any two of the values ​​in the second group described above, such as 2 ns to 20 ns, 2 ns to 10 ns, 5 ns to 20 ns, or 5 ns to 10 ns.

[0112] The range of the period W2 of the pulse of the laser L1 may be defined by a first group consisting of 1 ns, 2 ns, 5 ns, and 10 ns, and / or a second group consisting of 20 ns, 50 ns, 100 ns, and 200 ns. The lower limit of the range of the period W2 may be defined by any one of the values ​​included in the first group. For example, the lower limit of the range of the period W2 may be 1 ns or more, 2 ns or more, 5 ns or more, or 10 ns or more. The upper limit of the range of the period W2 may be defined by any one of the values ​​included in the second group. For example, the upper limit of the range of the period W2 may be 20 ns or less, 50 ns or less, 100 ns or less, or 200 ns or less.

[0113] The range of the period W2 of the pulse of the laser L1 may be determined by a combination of any one of the values ​​in the first group described above with any one of the values ​​in the second group described above, such as 1 ns to 200 ns, 2 ns to 100 ns, 5 ns to 50 ns, or 10 ns to 20 ns. The range of the period W2 may also be determined by a combination of any two of the values ​​in the first group described above, such as 1 ns to 10 ns, 1 ns to 5 ns, 2 ns to 10 ns, or 2 ns to 5 ns. The range of the period W2 may also be determined by a combination of any two of the values ​​in the second group described above, such as 20 ns to 200 ns, 20 ns to 100 ns, 50 ns to 200 ns, or 50 ns to 100 ns.

[0114] The range of peak power P1 of laser L1 may be defined by a first group consisting of 100 kW, 200 kW, 300 kW, and 400 kW, and / or a second group consisting of 500 kW, 600 kW, 800 kW, and 1000 kW. The lower limit of the range of peak power P1 may be defined by any one of the values ​​included in the first group. For example, the lower limit of the range of peak power P1 may be 100 kW or more, 200 kW or more, 300 kW or more, or 400 kW or more. The upper limit of the range of peak power P1 may be defined by any one of the values ​​included in the second group. For example, the upper limit of the range of peak power P1 may be 500 kW or less, 600 kW or less, 800 kW or less, or 1000 kW or less.

[0115] The range of peak output P1 may be determined by a combination of any one of the values ​​included in the first group described above with any one of the values ​​included in the second group described above, and may be, for example, 100 kW to 1000 kW, 200 kW to 800 kW, 300 kW to 600 kW, or 400 kW to 500 kW. The range of peak output P1 may also be determined by a combination of any two of the values ​​included in the first group described above, and may be, for example, 100 kW to 400 kW, 100 kW to 300 kW, 200 kW to 400 kW, or 200 kW to 300 kW. In addition, the range of peak output P1 may be determined by a combination of any two of the values ​​included in the second group described above, and may be, for example, 500 kW or more and 1000 kW or less, 500 kW or more and 800 kW or less, 600 kW or more and 1000 kW or less, or 600 kW or more and 800 kW or less.

[0116] The pulse energy and pulse width W1 of the laser L1 may be set to prevent the second electrode 50 from scattering over a wide area. For example, the laser L1 may have a pulse energy of 1.5 mJ or more and 2.0 mJ or less and a pulse width W1 of 5 ns or more and 7 ns or less. In this case, the laser L1 may have a pulse period W2 of 1 ns or more and 60 ns or less.

[0117] The values ​​of the pulse energy, pulse width W1, and peak power P1 of the laser L1 are not limited to the above ranges, and are appropriately adjusted depending on the characteristics of the second electrode 50, the characteristics of the laser L1, and the like.

[0118] According to the embodiment shown in FIGS. 1 to 16 , a laser beam L1 is irradiated onto a region of the second electrode 50 that does not overlap the first electrode 30 in a planar view, thereby forming a second electrode opening 51 in the second electrode 50. This allows light to pass through the electronic device 10 more easily than when the second electrode 50 extends over the entire first surface 16. This increases the transmittance of the entire electronic device 10. Furthermore, by using the laser beam L1, the second electrode 50 can be processed with high precision. For example, deviation of the shape of the second electrode opening 51 in a planar view from the designed shape can be suppressed. The same applies to the shape of the organic layer opening 41 in the organic layer 40. Processing precision can be improved by using the laser mask 90 described above.

[0119] Furthermore, use of the laser L1 makes it easier to control the inclination angles of the side surface 52 of the second electrode opening 51 in the second electrode 50 and the side surface 42 of the organic layer opening 41 in the organic layer 40. For example, the angle formed by the side surface 52 of the second electrode 50 and the side surface 42 of the organic layer 40 with respect to the normal direction to the first surface 16 of the substrate 15 can be made smaller than when the side surface is formed by an end portion of a layer made of a material attached to the substrate 15 by a vapor deposition method using a vapor deposition mask.

[0120] As a comparative example, consider the case where the second electrode is formed by a vapor deposition method using a vapor deposition mask. In this case, if the direction in which the material for the second electrode flies during the vapor deposition process is inclined with respect to the normal direction to the first surface 16 of the substrate 15, the shape of the second electrode formed on the substrate 15 in a planar view is likely to deviate from the shape of the through-hole in the vapor deposition mask. To prevent such deviation, it is necessary to reduce the thickness of the vapor deposition mask. However, if the thickness of the vapor deposition mask is reduced, the strength of the vapor deposition mask may decrease, making the vapor deposition mask more susceptible to damage. Furthermore, it may become difficult to clean and reuse the vapor deposition mask to which the material for the second electrode has adhered, which may increase the manufacturing cost of the electronic device 10.

[0121] In contrast to this, according to the present embodiment, the second electrode 50 is processed by the laser L1, so that the second electrode 50 can be processed with high precision.

[0122] It should be noted that various modifications can be made to the above-described embodiment. Other embodiments will be described below with reference to the drawings as necessary. In the following description and the drawings used in the following description, parts that can be configured similarly to the above-described embodiment will be designated by the same reference numerals as those used for the corresponding parts in the above-described embodiment, and duplicated descriptions will be omitted. Furthermore, if it is clear that the effects obtained in the above-described embodiment can also be obtained in other embodiments, the descriptions of those effects may be omitted.

[0123] 17 to 23, an electronic device 10 according to another embodiment of the present disclosure and a manufacturing method thereof will be described. FIG. 17 is a cross-sectional view showing an example of the electronic device 10. FIG. 18A is an enlarged cross-sectional view of the electronic device 10 of FIG. 17. The electronic device 10 may include an insulating layer 60 located between the first surface 16 of the substrate 15 and the organic layer 40 in the normal direction of the first surface 16. The insulating layer 60 may include an insulating layer first opening 61. In plan view, the first electrode 30 may be located in the insulating layer first opening 61. Although not shown, a portion of the first electrode 30 may be located between the insulating layer 60 and the first surface 16 of the substrate 15.

[0124] The insulating layer 60 may also include an insulating layer second opening 62. The insulating layer second opening 62 may overlap the second electrode opening 51 of the second electrode 50 in a planar view. The insulating layer second opening 62 may also overlap the organic layer opening 41 of the organic layer 40 in a planar view. The insulating layer 60 includes a side surface 63 facing the insulating layer second opening 62. As shown in FIG. 18A , the upper end of the side surface 63 of the insulating layer 60 may be in contact with the lower end of the side surface 42 of the organic layer 40. This relationship between the side surface 63 and the side surface 42 can be achieved when the organic layer opening 41 and the insulating layer second opening 62 are formed by laser processing.

[0125] The insulating layer 60 includes a material having insulating properties. For example, the insulating layer 60 may include a resin material such as a polyimide resin.

[0126] Next, an example of a method for manufacturing the electronic device 10 shown in FIG. 17 will be described.

[0127] First, a substrate 15 on which a first electrode 30 is formed is prepared, as in the case of the above-described embodiment shown in Figures 5 and 6. Subsequently, an insulating layer forming step is performed in which an insulating layer 60 having an insulating layer first opening 61 is formed on the first surface 16 of the substrate 15. Figures 19 and 20 are a cross-sectional view and a plan view showing an example of the substrate 15 on which the first electrode 30 and the insulating layer 60 are formed. Figure 19 corresponds to a cross-sectional view of the substrate 15 shown in Figure 20 taken along line XIX-XIX.

[0128] In the insulating layer forming step, for example, first, a solution containing the material for the insulating layer 60 is applied to the first surface 16 side of the substrate 15, and the solution is dried to form the insulating layer 60 over the entire first surface 16. Next, the insulating layer 60 is exposed to light and developed to form first insulating layer openings 61 in the insulating layer 60. In this manner, the insulating layer 60 can be formed between the first electrodes 30.

[0129] 21 , an organic layer forming step is performed to form an organic layer 40 on the first electrode 30. The organic layer 40 may be formed so as to overlap the first electrode 30 and the insulating layer 60 in a plan view. In this manner, a laminate 18 can be prepared, which includes a substrate 15, two or more first electrodes 30 on the first surface 16 of the substrate 15, an insulating layer 60 located between the first electrodes 30, and an organic layer 40 located on the first electrodes 30.

[0130] 22, a second electrode formation step is performed to form a second electrode 50. In the second electrode formation step, similar to the above-described embodiment shown in FIGS. 5 and 6, the second electrode 50 is formed on the organic layer 40 so that the second electrode 50 overlaps two or more first electrodes 30 in plan view.

[0131] Next, as shown in FIG. 23 , a removal step is performed in which a region of the second electrode 50 that does not overlap with the first electrode 30 in a planar view is partially removed to form the second electrode opening 51. As shown in FIG. 23 , the removal step may also include an irradiation step in which the second electrode 50 is irradiated with a laser L1. By irradiating the second electrode 50 with the laser L1, the second electrode opening 51 can be formed in the second electrode 50, as shown in FIG. 17 above. In this manner, an electronic device 10 including the second electrode 50 that includes the second electrode opening 51 can be obtained.

[0132] The irradiation step may include a step of irradiating a laser beam L1 onto a region of the organic layer 40 that overlaps with the second electrode opening 51 after the second electrode opening 51 is formed in the second electrode 50. By irradiating the organic layer 40 with the laser beam L1, an organic layer opening 41 that overlaps with the second electrode opening 51 can be formed in the organic layer 40, as shown in FIG.

[0133] The irradiation step may also include a step of irradiating a laser beam L1 onto a region of the insulating layer 60 that overlaps the organic layer opening 41 after the organic layer opening 41 is formed in the organic layer 40. By irradiating the insulating layer 60 with the laser beam L1, it is possible to form a second electrode opening 51 and an insulating layer second opening 62 that overlaps the organic layer opening 41 in the insulating layer 60, as shown in FIG.

[0134] In the organic layer opening 41, the first surface 16 of the substrate 15 may be exposed or not. "Exposed" means that no layer is formed on the first surface 16. "Not exposed" means that some layer is formed on the first surface 16. For example, as shown in FIG. 18B , an insulating layer 60 may be located on the first surface 16 of the substrate 15 in the organic layer opening 41. The thickness of the insulating layer 60 located in the organic layer opening 41 in a planar view may be smaller than the thickness of the insulating layer 60 overlapping the organic layer 40 in a planar view. Such an insulating layer 60 is formed, for example, by partially removing the insulating layer 60 in the thickness direction during the process of irradiating the region of the insulating layer 60 overlapping the organic layer opening 41 with laser light L1. Leaving the insulating layer 60 in the organic layer opening 41 can prevent electrical connection between two adjacent first electrodes 30 sandwiching the organic layer opening 41 in a planar view.

[0135] Although not shown, a layer having insulating properties and different from the insulating layer 60 may be located on the first surface 16 of the substrate 15 in the insulating layer second opening 62. This makes it possible to prevent two first electrodes 30 adjacent to each other across the insulating layer second opening 62 from being electrically connected to each other.

[0136] 24A, an electronic device 10 according to another embodiment of the present disclosure will be described. The electronic device 10 may include a protective layer 70 that overlaps the second electrode 50 and the second electrode opening 51 in a plan view.

[0137] The protective layer 70 includes an insulating and transparent material. The material of the protective layer 70 may be an organic material or an inorganic material. For example, the protective layer 70 may include a resin material such as a polyimide resin, an acrylic resin, or an epoxy resin. For example, the protective layer 70 may include an inorganic material. The inorganic material may be an inorganic nitride such as silicon nitride, or an inorganic oxide such as silicon oxide or aluminum oxide. The protective layer 70 may be made of these materials and may include two or more layers stacked in the thickness direction of the substrate 15.

[0138] 24A , when the upper end 53 of the side surface 52 of the second electrode 50 is raised compared to the surrounding second electrode 50, the upper end 53 of the side surface 52 of the second electrode 50 can penetrate into the protective layer 70. This increases the contact area between the second electrode 50 and the protective layer 70. This makes it possible to prevent the protective layer 70 from peeling off from the second electrode 50.

[0139] 24A, the protective layer 70 may cover the side surfaces of the organic layer 40. The protective layer 70 can prevent water vapor, oxygen, and the like in the atmosphere from entering the organic layer 40. This can prevent deterioration of the organic layer 40.

[0140] 24A , the surface of the protective layer 70 overlapping the second electrode opening 51 may be located between the first surface 16 and the surface of the second electrode 50 overlapping the first electrode 30.

[0141] The protective layer 70 may have a thickness greater than the total thickness of the first electrode 30, the organic layer 40, and the second electrode 50. For example, as shown in Fig. 24B, the surface of the second electrode 50 overlapping the first electrode 30 may be located between the first surface 16 and the surface of the protective layer 70 overlapping the second electrode opening 51 in the thickness direction of the substrate 15.

[0142] The step of forming the protective layer 70 may include a step of applying a liquid containing the material of the protective layer 70 to the second electrode 50 and the second electrode opening 51. The protective layer 70 may also be formed by other methods.

[0143] 25 to 28, an electronic device 10 and a manufacturing method thereof according to another embodiment of the present disclosure will be described. In the above-described embodiment, an example has been shown in which the second electrode 50 located on the organic layer 40 is removed to form the second electrode opening 51. Here, an example will be described in which the second electrode 50 is removed in a region that does not overlap with the organic layer 40 in a plan view to form the second electrode opening 51.

[0144] 25 is a cross-sectional view showing an example of the electronic device 10 according to the present embodiment. As shown in Fig. 25, the organic layer 40 does not face the second electrode opening 51 of the second electrode 50, and an end portion 47 of the organic layer 40 may overlap the second electrode 50 in a plan view.

[0145] Next, an example of a method for manufacturing the electronic device 10 shown in FIG. 25 will be described.

[0146] First, a substrate 15 on which a first electrode 30 is formed is prepared, as in the case of the above-described embodiment shown in Figures 5 and 6. Then, as shown in Figure 26, an organic layer forming step is performed in which an organic layer 40 is formed on the first electrode 30. As shown in Figure 26, there may be a gap between two adjacent organic layers 40 in a planar view, where no organic layer 40 is present.

[0147] 27, a second electrode formation step is performed to form a second electrode 50. In the second electrode formation step, similar to the above-described embodiment shown in FIGS. 5 and 6, the second electrode 50 is formed on the organic layer 40 and the first surface 16 of the substrate 15 so that the second electrode 50 overlaps two or more first electrodes 30 in plan view.

[0148] Next, as shown in FIG. 28 , a removal step is performed in which a region of the second electrode 50 that does not overlap with the first electrode 30 in a planar view is partially removed to form a second electrode opening 51. As shown in FIG. 28 , the removal step may also include an irradiation step of irradiating the second electrode 50 with a laser L1. By irradiating the second electrode 50 with the laser L1, the second electrode opening 51 can be formed in the second electrode 50, as shown in FIG. 25 above. In this manner, an electronic device 10 including a second electrode 50 that includes a second electrode opening 51 can be obtained.

[0149] An electronic device 10 according to another embodiment of the present disclosure and a method for manufacturing the same will be described with reference to FIGS.

[0150] A method for forming the organic layer 40 on the first electrode 30 in this embodiment will be described. The organic layer formation step for forming the organic layer 40 includes a step of depositing an organic material on the substrate 15 using two or more deposition masks 80. For example, three deposition masks 80 are used.

[0151] 29 is a plan view showing an example of a first vapor deposition mask 80A. The first vapor deposition mask 80A includes a first shielding region 82A and first through-holes 81A. The first through-holes 81A may be aligned along the third direction D3 and the fourth direction D4. The organic material that passes through the first through-holes 81A and adheres to the substrate 15 forms a first organic layer 40A.

[0152] 30 is a plan view showing an example of a second vapor deposition mask 80B. The second vapor deposition mask 80B includes a second shielding region 82B and second through-holes 81B. The second through-holes 81B may be aligned along the third direction D3 and the fourth direction D4. The organic material that passes through the second through-holes 81B and adheres to the substrate 15 forms a second organic layer 40B.

[0153] 31 is a plan view showing an example of a third vapor deposition mask 80C. The third vapor deposition mask 80C includes a third shielding region 82C and third through-holes 81C. The third through-holes 81C may be aligned along the first direction D1 and the second direction D2. The organic material that passes through the third through-holes 81C and adheres to the substrate 15 forms a third organic layer 40C.

[0154] The two or more deposition masks 80 used to form the organic layer 40 are also referred to as a "deposition mask group."

[0155] Next, the positional relationship between the first vapor deposition mask 80A, the second vapor deposition mask 80B, and the third vapor deposition mask 80C will be described. Fig. 32 is a plan view showing an example of a mask stack 85. The mask stack 85 includes two or more stacked vapor deposition masks 80. The mask stack 85 shown in Fig. 32 includes a first vapor deposition mask 80A, a second vapor deposition mask 80B, and a third vapor deposition mask 80C, which are stacked.

[0156] In the mask stack 85, the alignment marks of the deposition masks 80A to 80C may overlap each other. Alternatively, the deposition masks 80A to 80C may be overlapped based on the arrangements of the through holes 81A to 81C and the shielding regions 82A to 82C of the deposition masks 80A to 80C. When the deposition masks 80A to 80C are overlapped, tension may or may not be applied to the deposition masks 80A to 80C.

[0157] The diagram of the state in which two or more deposition masks 80 are stacked may be obtained by stacking image data of the deposition masks 80. For example, first, an imaging device is used to acquire image data relating to the contours of the through holes 81A to 81C of each of the deposition masks 80A to 80C. Next, an image processing device is used to stack the image data of each of the deposition masks 80A to 80C. This makes it possible to create a diagram such as that shown in FIG. 32. When acquiring the image data, tension may or may not be applied to each of the deposition masks 80A to 80C. The diagram of the state in which two or more deposition masks 80 are stacked may be obtained by stacking design drawings for manufacturing each of the deposition masks 80A to 80C.

[0158] 32, the outline of the first through hole 81A is indicated by a dashed line, the outline of the second through hole 81B is indicated by a dotted line, and the outline of the third through hole 81C is indicated by a solid line. The mask stack 85 has an overlapping shielding region 83. The overlapping shielding region 83 is a region where the shielding regions 82A to 82C of each vapor deposition mask 80 overlap with each other in a plan view.

[0159] Some overlapping shielding regions 83 may be located between adjacent first through holes 81A and second through holes 81B in the first direction D1 and between two adjacent third through holes 81C in the second direction D2. Other overlapping shielding regions 83 may be located between two adjacent third through holes 81C in the first direction D1 and between adjacent first through holes 81A and second through holes 81B in the second direction D2.

[0160] 33 is a plan view showing an example of organic layers 40A to 40C formed using the vapor deposition masks 80A to 80C of FIGS. 29 to 31. None of the organic materials constituting the first organic layer 40A, the second organic layer 40B, and the third organic layer 40C can reach the substrate 15 at the position of the overlapping and shielding region 83. In this case, the organic layer 40 includes an organic layer opening 41. The organic layer opening 41 is formed at a position corresponding to the overlapping and shielding region 83.

[0161] Some of the organic layer openings 41 may be located between the adjacent first organic layer 40A and second organic layer 40B in the first direction D1 and between two adjacent third organic layers 40C in the second direction D2. Other organic layer openings 41 may be located between two adjacent third organic layers 40C in the first direction D1 and between the adjacent first organic layer 40A and second organic layer 40B in the second direction D2.

[0162] 34 is a plan view showing an example of a second electrode 50 formed on the organic layers 40A to 40C of FIG. 33. The second electrode 50 includes a region overlapping the organic layers 40A to 40C in a plan view and a region overlapping the organic layer opening 41 in a plan view. The second electrode 50 may be formed over the entire display region of the electronic device 10. The second electrode 50 may include a layer that extends continuously without gaps. The second electrode 50 may be made of a single layer that extends continuously without gaps. The second electrode 50 may be formed by a single vapor deposition process.

[0163] The removal step may partially remove a region of the second electrode 50 that overlaps the organic layer opening 41 in a planar view. For example, the removal step may involve irradiating a laser onto a region of the second electrode 50 that overlaps the organic layer opening 41 in a planar view. This forms a second electrode opening 51 in the second electrode 50. FIG. 35 is a plan view showing an example of a second electrode 50 in which a second electrode opening 51 is formed. The second electrode opening 51 overlaps the organic layer opening 41 in a planar view. The second electrode opening 51 may be surrounded by the organic layer opening 41 in a planar view. A portion of the second electrode 50 may overlap the organic layer opening 41 in a planar view.

[0164] Fig. 36 is a cross-sectional view of the electronic device 10 of Fig. 35 taken along line XXXVI-XXXVI. As shown in Fig. 36, the outer edge 51a of the second electrode opening 51 may be located more inward than the edge 47 of the organic layer 40. In this case, as shown in Fig. 36, the second electrode 50 can overlap the side surface 42 of the organic layer 40 in a planar view. The "inner side" refers to the side closer to the center of the second electrode opening 51 in a planar view.

[0165] The symbol K1 represents the distance from the outer edge 51a of the second electrode opening 51 to the edge 47 of the organic layer 40 in a planar view. The distance K1 may be, for example, 0.1 μm or more, 0.5 μm or more, or 1.0 μm or more. The distance K1 may be, for example, 2.0 μm or less, 4.0 μm or less, or 8.0 μm or less. The range of the distance K1 may be determined by a first group consisting of 0.1 μm, 0.5 μm, and 1.0 μm and / or a second group consisting of 2.0 μm, 4.0 μm, and 8.0 μm. The range of the distance K1 may be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the distance K1 may be determined by a combination of any two of the values ​​included in the first group. The range of the distance K1 may be determined by a combination of any two of the values ​​included in the second group. For example, it may be 0.1 μm or more and 8.0 μm or less, 0.1 μm or more and 4.0 μm or less, 0.1 μm or more and 2.0 μm or less, 0.1 μm or more and 1.0 μm or less, 0.1 μm or more and 0.5 μm or less, 0.5 μm or more and 8.0 μm or less, 0.5 μm or more and 4.0 μm or less, 0.5 μm or more and 2.0 μm or less, 0.5 μm or more and 1.0 μm or less, 1.0 μm or more and 8.0 μm or less, 1.0 μm or more and 4.0 μm or less, 1.0 μm or more and 2.0 μm or less, 2.0 μm or more and 8.0 μm or less, 2.0 μm or more and 4.0 μm or less, or 4.0 μm or more and 8.0 μm or less.

[0166] According to the present embodiment, the second electrode 50 includes an area that overlaps the organic layer opening 41 in plan view. In other words, the removal step is performed so that the organic layer 40 is not irradiated with a laser. This makes it possible to prevent the material of the organic layer 40 from scattering. This makes it possible to prevent the electronic device 10 from being contaminated by the scattered material of the organic layer 40.

[0167] An electronic device 10 according to another embodiment of the present disclosure will be described with reference to Fig. 37 to Fig. 41. Fig. 37 is a plan view showing an example of the electronic device 10. The electronic device 10 is, for example, a smartphone.

[0168] 37, the electronic device 10 may include a first display region 101 and a second display region 102. The second display region 102 may have a smaller area than the first display region 101. As shown in FIG. 37, the second display region 102 may be surrounded by the first display region 101. Although not shown, part of the outer edge of the second display region 102 may be located on the same straight line as part of the outer edge of the first display region 101.

[0169] Fig. 38 is an enlarged plan view showing the second display region 102 and its surroundings in Fig. 37. In the first display region 101, the elements 20 may be aligned along two different directions. In the example shown in Fig. 38, the elements 20 in the first display region 101 may be aligned along a third direction D3 and a fourth direction D4.

[0170] The element 20 includes a second electrode 50. The second electrode 50 located in the first display region 101 is also referred to as a second electrode 50X. The second electrode 50 located in the second display region 102 is also referred to as a second electrode 50Y.

[0171] The second electrode 50X has a first occupancy ratio. The first occupancy ratio is calculated by dividing the total area of ​​the second electrodes 50 located in the first display region 101 by the area of ​​the first display region 101. The second electrode 50Y has a second occupancy ratio. The second occupancy ratio is calculated by dividing the total area of ​​the second electrodes 50 located in the second display region 102 by the area of ​​the second display region 102. The second occupancy ratio may be smaller than the first occupancy ratio. For example, as shown in FIG. 38 , the second display region 102 may include a second electrode opening 51. The second electrode opening 51 does not overlap with the second electrode 50Y in a planar view.

[0172] The ratio of the second occupancy rate to the first occupancy rate may be, for example, 0.2 or more, 0.3 or more, or 0.4 or more. The ratio of the second occupancy rate to the first occupancy rate may be, for example, 0.6 or less, 0.7 or less, or 0.8 or less. The range of the ratio of the second occupancy rate to the first occupancy rate may be determined by a first group consisting of 0.2, 0.3, and 0.4 and / or a second group consisting of 0.6, 0.7, and 0.8. The range of the ratio of the second occupancy rate to the first occupancy rate may be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the ratio of the second occupancy rate to the first occupancy rate may be determined by a combination of any two of the values ​​included in the first group. The range of the ratio of the second occupancy rate to the first occupancy rate may be determined by a combination of any two of the values ​​included in the second group. For example, it may be 0.2 or more and 0.8 or less, 0.2 or more and 0.7 or less, 0.2 or more and 0.6 or less, 0.2 or more and 0.4 or less, 0.2 or more and 0.3 or less, 0.3 or more and 0.8 or less, 0.3 or more and 0.7 or less, 0.3 or more and 0.6 or less, 0.3 or more and 0.4 or less, 0.4 or more and 0.8 or less, 0.4 or more and 0.7 or less, 0.4 or more and 0.6 or less, 0.6 or more and 0.8 or less, 0.6 or more and 0.7 or less, or 0.7 or more and 0.8 or less.

[0173] When the second occupancy rate is smaller than the first occupancy rate, the second display region 102 has a higher transmittance than the first display region 101. In this case, in the second display region 102, light that reaches the electronic device 10 is likely to reach optical components on the back side of the substrate 15. Optical components are components that realize some function by detecting light, such as a camera. The function of the second display region 102 that is realized by detecting light is, for example, a camera, a fingerprint sensor, a face authentication sensor, or other sensor.

[0174] The second electrode 50 in the first display region 101 may extend over almost the entire area of ​​the first display region 101. For example, the first occupancy ratio may be 90% or more, 95% or more, 98% or more, 99% or more, 99.5% or more, 99.9% or more, or 100%.

[0175] Fig. 39 is a plan view showing an example of the first display region 101. As shown in Figs. 38 and 39, the elements 20 in the first display region 101 may be arranged at a 31st period P31 along the third direction D3. The elements 20 in the first display region 101 may be arranged at a 41st period P41 along the fourth direction D4.

[0176] FIG. 40 is a plan view showing an example of the second display region 102. FIG. 41 is a plan view showing an example of the organic layer 40 of the second display region 102. As shown in FIGS. 38, 40, and 41, the elements 20 in the second display region 102 may be arranged at a 32nd pitch P31 along the third direction D3. The 32nd pitch P32 may be longer than the 31st pitch P31. The elements 20 in the second display region 102 may be arranged at a 42nd pitch P42 along the fourth direction D4. The 42nd pitch P42 may be longer than the 41st pitch P41.

[0177] Since the second display region 102 includes elements 20, when the elements 20 are pixels, an image can be displayed in the second display region 102. As described above, in the second display region 102, light that reaches the electronic device 10 is likely to reach optical components on the back side of the substrate 15. Therefore, the second display region 102 can detect light and display an image.

[0178] The ratio of the 32nd period P32 to the 31st period P31 may be, for example, 1.1 or more, 1.3 or more, or 1.5 or more. The ratio of the 32nd period P32 to the 31st period P31 may be, for example, 2.0 or less, 3.0 or less, or 4.0 or less. The range of the ratio of the 32nd period P32 to the 31st period P31 may be determined by a first group consisting of 1.1, 1.3, and 1.5 and / or a second group consisting of 2.0, 3.0, and 4.0. The range of the ratio of the 32nd period P32 to the 31st period P31 may be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the ratio of the 32nd period P32 to the 31st period P31 may be determined by a combination of any two of the values ​​included in the first group. The range of the ratio of the 32nd period P32 to the 31st period P31 may be determined by a combination of any two of the values ​​included in the second group described above. For example, it may be 1.1 to 4.0, 1.1 to 3.0, 1.1 to 2.0, 1.1 to 1.5, 1.1 to 1.3, 1.3 to 4.0, 1.3 to 3.0, 1.3 to 2.0, 1.3 to 1.5, 1.5 to 4.0, 1.5 to 3.0, 1.5 to 2.0, 2.0 to 4.0, 2.0 to 3.0, or 3.0 to 4.0. When the ratio of the 32nd period P32 to the 31st period P31 is small, the difference in pixel density of the second display region 102 becomes small relative to the pixel density of the first display region 101. This makes it possible to suppress the occurrence of a visual difference between the first display region 101 and the second display region 102.

[0179] The numerical range of the ratio of the 42nd period P42 to the 41st period P41 may be the same as the numerical range of the ratio of the 32nd period P32 to the 31st period P31.

[0180] In each of the above-described embodiments, an example has been shown in which the second electrode 50 is partially removed by irradiating the second electrode 50 with a laser. However, the method for partially removing the second electrode 50 is not limited to laser irradiation. For example, the second electrode 50 can be partially removed by etching such as dry etching or wet etching.

Claims

1. A method for manufacturing an electronic device, comprising: a preparation step of preparing a laminate including a substrate having a first surface and a second surface opposite to the first surface, two or more first electrodes on the first surface of the substrate, and an organic layer on the first electrodes; a second electrode forming step of forming a second electrode on the organic layer so as to overlap two or more of the first electrodes when viewed along a normal direction of the first surface of the substrate; a removing step of partially removing a region of the second electrode that does not overlap with the first electrode in a plan view, the removing step includes an irradiation step of irradiating the second electrode with a laser to form a second electrode opening; the second electrode includes a side surface facing the second electrode opening; the side surface of the second electrode includes an upper end that is raised compared to the surrounding second electrode, a height of the side surface of the second electrode is greater than an average thickness of a region of the second electrode that overlaps with the first electrode in a plan view; the organic layer of the laminate includes a plurality of first organic layers each covering the first electrode, and a plurality of second organic layers each covering the first electrode different from the first electrode covered by the first organic layer; the first organic layer and the second organic layer overlap each other at positions that do not overlap the first electrode in a plan view, The method for manufacturing an electronic device, wherein the removing step includes a step of at least partially removing the first organic layer and the second organic layer that overlap each other.

2. The method for manufacturing an electronic device according to claim 1 , wherein the removing step partially removes a region of the second electrode that is located between the first electrodes in a plan view.

3. The method for manufacturing an electronic device according to claim 1 , wherein the irradiating step includes the step of irradiating the second electrode with a laser through a through-hole in a laser mask to form a second electrode opening.

4. 4. The method for manufacturing an electronic device according to claim 1, wherein the height of the side surface of the second electrode is 1.1 times or more the average thickness of the region of the second electrode that overlaps the first electrode in a planar view.

5. The method for manufacturing an electronic device according to claim 1 , further comprising forming a protective layer that overlaps the second electrode and the second electrode opening in a plan view.

6. The method for manufacturing an electronic device according to claim 1 , wherein the irradiating step includes a step of irradiating a laser onto a region of the organic layer that overlaps the second electrode opening in a plan view to form an organic layer opening.

7. the width of a side surface of the organic layer facing the organic layer opening is 2.0 μm or less; a width of the side surface of the organic layer is a distance in an in-plane direction of the first surface from a position where a height of the side surface becomes t4 to a position where a height of the side surface becomes t5, t4 is 0.2 × t3, t5 is 0.8 × t3, The method for manufacturing an electronic device according to claim 6 , wherein t3 is an average thickness of a region of the organic layer that is located between the side surface of the organic layer and the end of the first electrode in a plan view.

8. the stacked body includes an organic layer opening located between two of the organic layers adjacent to each other in a plan view, the second electrode forming step includes forming the second electrode so that the second electrode overlaps the organic layer and the organic layer opening in a plan view; The method for manufacturing an electronic device according to claim 1 , wherein the removing step partially removes a region of the second electrode that overlaps the organic layer opening in a plan view.

9. The method for manufacturing an electronic device according to claim 1 , wherein the laminate includes an insulating layer located between the first electrodes in a plan view.

10. The method for manufacturing an electronic device according to claim 9 , wherein the removing step includes the step of partially removing the insulating layer.

11. The method for manufacturing an electronic device according to claim 1 , wherein the preparation step includes a step of evaporating a material of the organic layer onto the first electrode through through holes in a deposition mask.

12. 1. An electronic device comprising: a substrate having a first surface and a second surface opposite the first surface; two or more first electrodes on the first surface of the substrate; an organic layer on the first electrode; a second electrode located on the organic layer and extending so as to overlap two or more of the first electrodes in a plan view; the second electrode includes a second electrode opening that does not overlap the first electrode in a plan view and a side surface facing the second electrode opening, the side surface of the second electrode includes an upper end that is raised compared to the surrounding second electrode, a height of the side surface of the second electrode is greater than an average thickness of a region of the second electrode that overlaps with the first electrode in a plan view; the organic layer includes a plurality of first organic layers each covering the first electrode, a plurality of second organic layers each covering the first electrode different from the first electrode covered by the first organic layer, and a plurality of organic layer openings overlapping the second electrode openings in a plan view; the first organic layer includes a side surface facing the organic layer opening; the second organic layer includes a side surface facing the organic layer opening, the side surface of which faces the first organic layer; An electronic device, wherein an upper end of the side surface of the organic layer is in contact with a lower end of the side surface of the second electrode.

13. The electronic device according to claim 12 , wherein the height of the side surface of the second electrode is 1.1 times or more the average thickness of the region overlapping the first electrode in a plan view.

14. The electronic device according to claim 12 or 13, wherein the second electrode opening is surrounded by the second electrode in a plan view.

15. The electronic device according to claim 12 , wherein an upper end of the side surface of the second electrode has a contour that surrounds the second electrode opening in a plan view.

16. the second electrode includes a base having an outline that surrounds an outline of an upper end of the side surface of the second electrode in a plan view; The electronic device according to claim 15 , wherein the thickness of the second electrode at the base is 1.05 times the average thickness of the region overlapping the first electrode in a plan view.

17. The electronic device according to claim 12 , further comprising a protective layer that overlaps the second electrode and the second electrode opening in a plan view.

18. 18. The electronic device according to claim 17, wherein the surface of the protective layer overlapping the second electrode opening is located between the surface of the second electrode overlapping the first electrode and the first surface in the thickness direction of the substrate.

19. 18. The electronic device according to claim 17, wherein a surface of the second electrode overlapping the first electrode is located between a surface of the protective layer overlapping the second electrode opening and the first surface in the thickness direction of the substrate.

20. the width of the side surface of the organic layer is 2.0 μm or less, a width of the side surface of the organic layer is a distance in an in-plane direction of the first surface from a position where a height of the side surface becomes t4 to a position where a height of the side surface becomes t5, t4 is 0.2 × t3, t5 is 0.8 × t3, 20 . The electronic device according to claim 12 , wherein t3 is an average thickness of a region of the organic layer that is located between the side surface of the organic layer and an end of the first electrode in a plan view.

21. 21. The electronic device according to claim 12, further comprising an insulating layer including a first opening that overlaps the first electrode in a planar view, and that is positioned between the first surface of the substrate and the organic layer in a normal direction of the first surface of the substrate.

22. The electronic device according to claim 21 , wherein the insulating layer includes an insulating layer second opening located between the first electrodes in a plan view and overlapping the second electrode opening.

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