Plasma generation apparatus and control method thereof

Abstract

To provide a plasma generation device or a control method therefor, capable of assisting an initial discharge of a plasma.SOLUTION: According to an embodiment of the present specification, a plasma generation device comprises: a chamber providing a generation space for a plasma; an antenna module that is arranged adjacent to the chamber, and connected to a first power source and generates induced electric field in the chamber; an electrode that is arranged adjacent to the chamber, and connected to a second power source, and assists in a generation of the plasma; a sensor that acquires sensing information related to a state of the plasma; and a controller that controls the first and second power sources.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] This specification relates to a plasma generation apparatus and a control method thereof, and more particularly to a plasma generation apparatus and a control method thereof that further assist in the initial discharge of the plasma. [Background technology]

[0002] Plasma discharge is used in many industrial and scientific applications. Through plasma discharge, it is possible to generate active species of various gases used in various industrial fields such as semiconductor wafer processing, and to process by-products generated in industrial processes.

[0003] Inductively coupled plasma (ICU) and capacitively coupled plasma (CAPCID) methods are widely used as plasma sources for plasma discharge. The ICUID method is a method in which RF power is applied to a coil to form an induced electric field, and plasma discharge is performed via this induced electric field.

[0004] Methods such as using a separate igniter or supplying more power are employed to initiate the initial discharge (ignition) of the plasma. However, there are problems with ignition assistance methods that do not take into account the plasma generation state, which can damage the equipment or introduce impurities into the generated reactive species. In response to this, there is a recognized need to develop methods to assist the initial discharge of the plasma while minimizing equipment damage and impurity generation. [Overview of the Initiative] [Problems that the invention aims to solve]

[0005] One objective of this specification is to provide a plasma generation apparatus or a method for controlling the same that assists in the initial discharge of a plasma.

[0006] Another objective of this specification is to provide a plasma generator or a method for controlling the plasma generator or a plasma generator or plasma generator that minimizes damage to the device due to the initial discharge of the plasma.

[0007] The problems addressed herein are not limited to those described above, and any problems not mentioned herein should be clearly understood by those skilled in the art in the field to which the present invention pertains from this specification and the drawings. [Means for solving the problem]

[0008] According to one embodiment of this specification, a plasma generation apparatus is provided, comprising: a chamber that provides a plasma generation space; an antenna module disposed around the chamber and connected to a first power supply to form an induced electric field in the chamber; an electrode disposed around the chamber and connected to a second power supply to assist in the generation of the plasma; a sensor that acquires sensing information regarding the state of the plasma; and a controller that controls the first power supply and the second power supply, wherein the controller applies an RF voltage to a load including the antenna module via the first power supply from a first time point in time, acquires the sensing information regarding the state of the plasma due to the application of the RF voltage, and controls the second power supply based on the sensing information from a second time point after a predetermined time from the first time point, wherein if the sensing information at the second time point in time does not satisfy predetermined conditions, the controller applies a pulse voltage to the electrode via the second power supply, and if the sensing information at the second time point in time satisfies predetermined conditions, the controller does not apply the pulse voltage to the electrode via the second power supply.

[0009] According to one embodiment of this specification, a control method for a plasma generation apparatus includes a chamber that provides a plasma generation space, an antenna module disposed around the chamber and connected to a first power supply to form an induced electric field in the chamber, an electrode disposed around the chamber and connected to a second power supply to assist in the generation of the plasma, a sensor that acquires sensing information relating to the state of the plasma, and a controller that controls the first power supply and the second power supply, wherein the controller includes the steps of: applying an RF voltage to a load including the antenna module via the first power supply from a first time point in time; acquiring the sensing information relating to the state of the plasma due to the application of the RF voltage; and controlling the second power supply based on the sensing information from a second time point a predetermined time after the first time point, wherein the controller controls the second power supply, and the controller does not apply a pulse voltage to the electrode via the second power supply if the sensing information at the second time point satisfies a predetermined condition, but applies the pulse voltage to the electrode via the second power supply if the sensing information at the second time point does not satisfy the predetermined condition.

[0010] The means of solving the problems described herein are not limited to those described above, and any means of solving the problems not mentioned herein should be clearly understood by those skilled in the art in the field to which the present invention pertains from this specification and the drawings. [Effects of the Invention]

[0011] According to this specification, a plasma generation apparatus can be provided in which the initial discharge of the plasma is performed more rapidly.

[0012] According to this specification, a plasma generator can be provided in which impurity generation is suppressed by assisting the initial discharge of the plasma.

[0013] The effects described herein are not limited to those described above, and any effects not mentioned herein should be clearly understood by those skilled in the art in the field to which the present invention pertains from this specification and the drawings. [Brief explanation of the drawing]

[0014] [Figure 1] This is a diagram illustrating a plasma generation system according to one embodiment of this specification. [Figure 2] This is a diagram illustrating a plasma generation system according to one embodiment of this specification. [Figure 3] This is a diagram illustrating a plasma generation apparatus according to one embodiment of this specification. [Figure 4] This is a diagram illustrating a DC electrode according to one embodiment of this specification. [Figure 5] This is a diagram illustrating a DC power supply according to one embodiment of this specification. [Figure 6] This is a diagram illustrating a DC electrode according to one embodiment of this specification. [Figure 7] This is a diagram illustrating a DC power supply according to one embodiment of this specification. [Figure 8] This is a diagram illustrating an antenna module according to one embodiment of this specification. [Figure 9] This is a diagram illustrating the operation of an antenna module according to one embodiment of this specification. [Figure 10] This is a diagram illustrating an antenna module according to one embodiment of this specification. [Figure 11] This is a diagram illustrating the operation of an antenna module according to one embodiment of this specification. [Figure 12] This is a diagram illustrating an antenna module according to one embodiment of this specification. [Figure 13] This is a diagram illustrating an RF power supply according to one embodiment of this specification. [Figure 14] This figure illustrates a plasma generation process according to one embodiment of this specification. [Figure 15]This is a diagram illustrating a plasma generation apparatus according to one embodiment of this specification. [Figure 16] This figure illustrates a plasma generation process according to one embodiment of this specification. [Figure 17] This figure illustrates a plasma generation process according to one embodiment of this specification. [Figure 18] This figure illustrates the output current and high-voltage pulse output according to a control method for a plasma generator according to one embodiment of this specification. [Figure 19] This figure illustrates a plasma generation process according to one embodiment of this specification. [Figure 20] This figure illustrates a plasma generation process according to one embodiment of this specification. [Figure 21] This figure illustrates the output current and high-voltage pulse output according to a control method for a plasma generator according to one embodiment of this specification. [Figure 22] This figure illustrates a plasma generation process according to one embodiment of this specification. [Figure 23] This figure illustrates a plasma generation process according to one embodiment of this specification. [Figure 24] This figure illustrates the output current and high-voltage pulse output according to a control method for a plasma generator according to one embodiment of this specification. [Figure 25] This figure illustrates a plasma generation process according to one embodiment of this specification. [Figure 26] This figure illustrates a plasma generation process according to one embodiment of this specification. [Figure 27] This figure illustrates the output current and high-voltage pulse output according to a control method for a plasma generator according to one embodiment of this specification. [Figure 28] This is a diagram illustrating a plasma generation apparatus according to one embodiment of this specification. [Figure 29] This is a diagram illustrating a plasma generation apparatus according to one embodiment of this specification. [Figure 30]This figure shows a power signal and a control signal for a high-voltage pulse that is modified based on the power signal in a plasma generation apparatus including a sensor according to one embodiment of this specification. [Figure 31] This is a diagram illustrating a plasma generation apparatus according to one embodiment of this specification. [Figure 32] This is a diagram illustrating a plasma generation apparatus according to one embodiment of this specification. [Figure 33] This is a diagram illustrating a plasma generation apparatus according to one embodiment of this specification. [Figure 34] This figure illustrates a plasma generation apparatus according to some embodiments of this specification. [Figure 35] This figure shows a power signal and a control signal for a high-voltage pulse that is modified based on the power signal in a plasma generation apparatus including a sensor according to one embodiment of this specification. [Modes for carrying out the invention]

[0015] According to one embodiment of this specification, a plasma generation apparatus is provided, comprising: a chamber that provides a plasma generation space; an antenna module disposed around the chamber and connected to a first power supply to form an induced electric field in the chamber; an electrode disposed around the chamber and connected to a second power supply to assist in the generation of the plasma; a sensor that acquires sensing information regarding the state of the plasma; and a controller that controls the first power supply and the second power supply, wherein the controller applies an RF voltage to a load including the antenna module via the first power supply from a first time point in time, acquires the sensing information regarding the state of the plasma due to the application of the RF voltage, and controls the second power supply based on the sensing information from a second time point after a predetermined time from the first time point, wherein if the sensing information at the second time point does not satisfy predetermined conditions, the controller applies a pulse voltage to the electrode via the second power supply, and if the sensing information at the second time point satisfies predetermined conditions, the controller does not apply the pulse voltage to the electrode via the second power supply.

[0016] According to one embodiment of this specification, under predetermined conditions, the controller may apply the pulse voltage to the electrode via the second power supply if the sensing information indicates that the plasma was not generated in the chamber, and may not apply the pulse voltage to the electrode if the sensing information indicates that the plasma was generated in the chamber.

[0017] According to one embodiment of this specification, the sensing information acquired by the sensor may indicate the power supplied to the load via the first power supply.

[0018] According to one embodiment of this specification, the controller may apply the pulse voltage to the electrode if the sensing information at the second time point indicates that the power supplied to the load is less than the reference power, and may not apply the pulse voltage to the electrode if the sensing information at the second time point indicates that the power supplied to the load is equal to or greater than the reference power.

[0019] According to one embodiment of this specification, the first power supply includes a DC power source and an inverter that converts the DC power of the DC power source into RF power, the sensor is located between the DC power source and the inverter and acquires a first voltage output by the DC power source and a first current output from the DC power source, and the controller may apply the pulse voltage to the electrode based on the power supplied to the load determined based on the first voltage and the first current.

[0020] According to one embodiment of this specification, the sensor may acquire the sensing information based on a second current flowing through the antenna module.

[0021] According to one embodiment of this specification, the controller may apply the pulse voltage to the electrode if the phase difference between the second current and the RF voltage at the second time does not satisfy the predetermined conditions, and may not apply the pulse voltage to the electrode if the phase difference between the second current and the RF voltage at the second time satisfies the predetermined conditions.

[0022] According to one embodiment of this specification, if the sensing information does not satisfy the predetermined conditions at the second time point, the controller may apply a first pulse voltage to the electrode via the second power supply so that the electrode provides first power, and if the sensing information does not satisfy the predetermined conditions at a third time point after the second time point, the controller may apply a second pulse voltage to the electrode via the second power supply so that the electrode provides second power greater than the first power.

[0023] According to one embodiment of this specification, if the sensing information does not satisfy the predetermined conditions at the second time point, the controller may apply a first pulse voltage having a first voltage value to the electrode via the second power supply, and if the sensing information does not satisfy the predetermined conditions at a third time point after the second time point, the controller may apply a second pulse voltage having a second voltage value greater than the first voltage value to the electrode via the second power supply.

[0024] According to one embodiment of this specification, if the sensing information does not satisfy the predetermined conditions at the second time point, the controller may apply the pulse voltage to the electrode in a first cycle, and if the sensing information does not satisfy the predetermined conditions at the third time point, which is one hour after the second time point, the high-voltage pulse may be applied to the electrode in a second cycle shorter than the first cycle.

[0025] According to one embodiment of this specification, the controller may apply an RF voltage having a first magnitude to the load via the first power supply from the first time point, and if the sensing information does not satisfy the predetermined conditions at a third time point which is after the first time point but before the second time point, an RF voltage having a second magnitude greater than the first magnitude may be applied to the load.

[0026] According to one embodiment of this specification, if the sensing information does not satisfy the predetermined conditions at the second time point, the controller may apply the pulse voltage having a first voltage value to the electrode via the second power supply, and if the sensing information satisfies the predetermined conditions at a third time point delayed from the second time point, the application of the pulse voltage may be interrupted.

[0027] According to one embodiment of this specification, a control method for a plasma generation apparatus includes a chamber that provides a plasma generation space, an antenna module disposed around the chamber and connected to a first power supply to form an induced electric field in the chamber, an electrode disposed around the chamber and connected to a second power supply to assist in the generation of the plasma, a sensor that acquires sensing information relating to the state of the plasma, and a controller that controls the first power supply and the second power supply, wherein the controller includes the steps of: applying an RF voltage to a load including the antenna module via the first power supply from a first time point in time; acquiring the sensing information relating to the state of the plasma due to the application of the RF voltage; and controlling the second power supply based on the sensing information from a second time point in time a predetermined time after the first time point, wherein the controller controls the second power supply, and the controller does not apply a pulse voltage to the electrode via the second power supply if the sensing information at the second time point satisfies a predetermined condition, and applies the pulse voltage to the electrode via the second power supply if the sensing information at the second time point in time does not satisfy the predetermined condition.

[0028] According to one embodiment of this specification, the controller controlling the second power supply may include the controller applying the pulse voltage to the electrode via the second power supply when the sensing information indicates that the plasma was not generated in the chamber, and not applying the pulse voltage to the electrode when the sensing information indicates that the plasma was generated in the chamber.

[0029] According to one embodiment of this specification, the sensing information acquired by the sensor may indicate the power supplied to the load via the first power supply.

[0030] According to one embodiment of this specification, the controller's control of the second power supply may include applying the pulse voltage to the electrode if the sensing information at a second time point indicates that the power supplied to the load is less than a reference power, and not applying the pulse voltage to the electrode if the sensing information at a second time point indicates that the power supplied to the load is equal to or greater than the reference power.

[0031] According to one embodiment of this specification, the first power supply includes a DC power source and an inverter that converts the DC power of the DC power source into RF power, the sensor is located between the DC power source and the inverter and acquires a first voltage output by the DC power source and a first current output from the DC power source, and the controller controls the second power supply, the controller may control the second power supply based on the power supplied to the load determined based on the first voltage and the first current.

[0032] According to one embodiment of this specification, the sensor may acquire the sensing information based on a second current flowing through the antenna module.

[0033] According to one embodiment of this specification, the controller controlling the second power supply may further include the controller acquiring the sensing information and, if the phase difference between the second current and the RF voltage at a second time does not satisfy the predetermined condition, applying the pulse voltage to the electrode, and not applying the pulse voltage to the electrode if the phase difference between the second current and the RF voltage at a second time satisfies the predetermined condition.

[0034] According to one embodiment of this specification, the step of the controller controlling the second power supply may include, if the sensing information does not satisfy the predetermined conditions at a second time point, applying a first pulse voltage to the electrode via the second power supply so that the electrode provides first power, and if the sensing information does not satisfy the predetermined conditions at a third time point after the second time point, applying a second pulse voltage to the electrode via the second power supply so that the electrode provides second power greater than the first power.

[0035] According to one embodiment of this specification, the step of the controller controlling the second power supply may further include the steps of the controller applying a first pulse voltage having a first voltage value to the electrode via the second power supply if the sensing information does not satisfy the predetermined conditions at a second time point, and not applying the first pulse voltage to the electrode if the sensing information satisfies the predetermined conditions, and the controller applying a second pulse voltage having a second voltage value greater than the first voltage value to the electrode via the second power supply if the sensing information does not satisfy the predetermined conditions at a third time point after the second time point.

[0036] According to one embodiment of this specification, the controller controlling the second power supply may further include, if, at the second time point, the sensing information does not satisfy the predetermined conditions, applying the pulse voltage to the electrode in a first cycle, and if, at the third time point, which is one hour after the second time point, the sensing information does not satisfy the predetermined conditions, applying the pulse voltage to the electrode in a second cycle shorter than the first cycle.

[0037] According to one embodiment of this specification, the controller applying the RF voltage to the load via the first power supply may further include applying the RF voltage to the load at a first magnitude from a first time point, and at a third time point which is after the first time point but before the second time point, if the sensing information does not satisfy the predetermined conditions, applying the RF voltage to the load at a second magnitude greater than the first magnitude.

[0038] According to one embodiment of this specification, the step of the controller controlling the second power supply may include the step of the controller applying a pulse voltage having a first voltage value to the electrode via the second power supply if the sensing information does not satisfy the predetermined conditions at a second time point, and the step of the controller suspending the application of the pulse voltage if the sensing information satisfies the predetermined conditions at a third time point after the second time point. (Modes for carrying out the invention)

[0039] The objectives, features, and advantages of this specification will become clearer from the following detailed description with reference to the drawings. However, the contents described herein can be modified in various ways and various embodiments can be provided, and specific embodiments are illustrated in the drawings below and described in detail.

[0040] In the drawings, the thicknesses of layers and regions are exaggerated for clarity, and when an element or layer is indicated as "on" or "on top of" another element or layer, this includes not only directly on top of the other element or layer, but also when another layer or other element is interposed in between. Throughout the specification, the same reference numerals generally indicate the same element. Furthermore, the same elements of the same function within the same concept shown in the drawings of each embodiment are described using the same reference numerals.

[0041] The numbers used in the course of this specification (e.g., 1st, 2nd, etc.) are merely identifiers to distinguish one component from another.

[0042] Furthermore, the suffixes "module" and "part" used with respect to the constituent elements in the following description are added or mixed solely for the sake of ease of drafting the specification and do not have any distinct meaning or role of their own.

[0043] The methods according to the embodiments are carried out in the form of program instructions that can be executed via various computer means and can be recorded on a computer-readable medium. The computer-readable medium may include program instructions, data files, data structures, etc., individually or in combination. The program instructions recorded on the medium may be specifically designed and configured for the embodiments or may be publicly known and available to those skilled in the computer software art. Examples of computer-readable recording media include magnetic media such as hard disks, floppy disks, and magnetic tapes; optical media such as CD-ROMs and DVDs; magneto-optical media such as floptical disks; and hardware devices specifically configured to store and execute program instructions, such as ROM, RAM, and flash memory. Examples of program instructions include not only machine code, such as that produced by a compiler, but also high-level language code that can be executed by a computer using an interpreter or the like. The hardware devices described above can be configured to operate as one or more software modules to perform the operations of the embodiments, and vice versa.

[0044] 1. Plasma discharge This specification describes apparatus, systems, or methods for performing plasma discharge. This specification also describes, in several examples, apparatus, systems, or methods for assisting the initial plasma discharge by generating ignition in the plasma discharge space before the execution of the main plasma discharge, in order to support the plasma discharge.

[0045] 1.1 System According to one embodiment, a plasma discharge system can be provided.

[0046] Figure 1 is a diagram illustrating a plasma discharge system. Referring to Figure 1, the plasma generation system may include a power supply unit 100 that provides power, a plasma generation unit 200 that obtains power from the power supply unit and generates plasma, and a gas supply unit 300 that supplies gas to the plasma generation unit 200. The plasma generation system may further include a process unit 400 that performs a process using the generated plasma.

[0047] The power supply unit 100 can supply the power necessary for plasma generation. The power supply unit 100 can supply power to the plasma generation unit. The power supply unit 100 may include a DC power supply and / or an RF power supply. The power supply unit 100 can provide high-voltage pulses to the plasma generation unit 200 via the DC power supply. The power supply unit 100 can provide RF power to the plasma generation unit 200 via the RF power supply.

[0048] The plasma generation unit 200 can perform plasma discharge. The plasma generation unit 200 can acquire discharge gas and perform plasma discharge through the discharge gas. The plasma generation unit 200 can perform inductively coupled plasma discharge or energy storage coupled plasma discharge.

[0049] The plasma generation unit 200 can be a remote plasma source. The plasma generation unit 200 can form active species and provide the formed active species to the process unit 400.

[0050] The plasma generation unit 200 may include an atmospheric pressure plasma device that performs plasma discharge under atmospheric pressure (normal pressure). For example, the plasma generation unit 200 may include an atmospheric pressure plasma device that performs plasma discharge under several hundred Torr to atmospheric pressure (750 Torr).

[0051] The plasma generation unit 200 may include a low-pressure plasma device that performs low-pressure plasma discharge. For example, the plasma generation unit 200 may include a low-pressure plasma device that creates an environment with an initial vacuum (base pressure) of 10⁻⁵ to 10⁻⁷ Torr or less, and then generates plasma at a process pressure of several mTorr to several Torr using a desired process gas.

[0052] The plasma generation unit 200 can perform low-temperature plasma discharge operations at temperatures of tens to hundreds of degrees Celsius. For example, the plasma generation unit 200 can perform low-pressure, low-temperature plasma discharge operations such as cleaning, etching, deposition, surface treatment, and material synthesis in semiconductor and display processes. Furthermore, for example, the plasma generation unit 200 can perform atmospheric-pressure, low-temperature plasma discharge operations for glass substrate cleaning, hydrophilic / hydrophobic surface modification, nanotechnology, sterilization, harmful substance removal, and carbon dioxide reduction.

[0053] The plasma generation unit 200 can also perform high-temperature plasma discharge operations for plasma welding, cutting, plasma metallurgy, etc., at high temperatures of several thousand to tens of thousands of degrees.

[0054] The plasma generation unit 200 can generate a seed charge for plasma generation. In particular, when the plasma generation unit 200 performs an atmospheric pressure plasma discharge, the plasma generation unit 200 can generate a seed charge for the initial discharge. The plasma generation unit 200 includes a DC electrode, and can generate a seed charge when a DC high-voltage pulse is supplied to the DC electrode.

[0055] The plasma generation unit 200 can perform an initial discharge and a main discharge for plasma generation. The plasma generation unit 200 can perform an initial discharge in energy storage coupling mode (E mode) or a main discharge in inductive coupling mode (H mode). The plasma generation unit 200 includes an inductively coupled antenna including a coil, and the initial discharge or main discharge can be performed by supplying RF power to the inductively coupled antenna.

[0056] The specific configuration and operation of the plasma generation unit 200 will be described in more detail below.

[0057] The gas supply unit 300 can supply gas for plasma discharge to the plasma generation unit 200. The gas supply unit 300 can supply reactive gas or process gas to the plasma generation unit 200. The gas supply unit 300 can supply a gas selected according to the function or application of the plasma generation unit 200 or the process unit 400.

[0058] For example, the gas supply unit 300 supplies NF3 gas (nitrogen trifluoride gas), Ar gas (argon gas), Xe gas (xenon gas), Kr gas (krypton gas), N2 gas (nitrogen gas), O2 gas (oxygen gas), H2 gas (hydrogen gas), He gas (helium gas), Ne gas (neon gas), SiH4 gas (monosilane gas), NH3 gas (ammonia gas), PH3 gas (phosphine gas), B2H6 gas (diboranga gas). The plasma generation unit 200 can be supplied with one of the following gases or a mixture of gas and air: DCS gas (dichlorosilane gas), C5F8 gas (octafluoropentene gas), CF4 gas (carbon tetrafluoride gas), HBr gas (hydrogen bromide gas), Cl2 gas (chlorine gas), Xe gas (xenon gas), Kr gas (krypton gas), SF6 gas (sulfur hexafluoride gas), and CH4 gas (methane gas). The gas supply unit 300 can also supply gas to the plasma generation unit via a liquid phase precursor such as TEOS (tstra-ethyl-ortho-silicate), Tetrakis ((ethylmethylamino)zirconium), trimethylaluminum, or hexamethyldisiloxane.

[0059] The process unit 400 can perform a process before or after the plasma discharge. The process unit can perform the target process via the plasma generated by the plasma generation unit 200. Alternatively, the process unit 400 can transfer the material generated by the execution of the target process to the plasma generation unit.

[0060] The target processes may include a cleaning process that removes fine oil films from the surface of a material through collisions of plasma ions / radicals with the surface of the material to be treated; an etching process that generates plasma using a reactive etching gas appropriate for the purpose and uses it to selectively remove substances; a deposition process that injects a deposition gas suitable for the purpose and an additive gas for plasma discharge to deposit a substance onto the surface; a modification process that changes the surface properties using plasma; and a substance decomposition process that decomposes the target substance through plasma discharge.

[0061] The process unit 400 can perform desired operations related to semiconductor substrate processing. For example, the process unit 400 can be supplied with active species (e.g., hydrogen active species) from the plasma generation unit and can perform a cleaning process inside the process chamber.

[0062] The process unit 400 may include a process chamber, a substrate holder located within the process chamber where the semiconductor substrate to be processed (e.g., a silicon semiconductor substrate) is positioned, a shower head located above the substrate holder for supplying substrate processing material into the process chamber, and / or a vacuum pump for exhausting air from the process chamber.

[0063] The plasma generation system can be configured such that the process unit 400 performs the target process via the plasma generated through the plasma generation unit, or that by-products generated by the target process of the process unit 400 are processed by the plasma generation unit 200. Figure 2 is a diagram illustrating a plasma generation system according to several embodiments.

[0064] Referring to Figure 2(a), a plasma generation system according to one embodiment may include a process unit 401 and a plasma generation unit 201 for processing materials generated by the process unit 401. For example, referring to Figure 2(a), the plasma generation system may include a gas scrubber device. The process unit 401 is a device for performing semiconductor manufacturing processes, and the plasma generation unit 201 can perform processing of recalcitrant gases generated in the semiconductor manufacturing process of the process unit 401, such as sulfur hexafluoride (SF6), carbon tetrafluoride (CF4), and carbon perfluoride (PFC) gases.

[0065] Referring to Figure 2(b), the plasma generation system according to one embodiment may include a plasma generation unit 202 that generates active species and supplies them to a process unit 402, and a process unit 402 that performs processes using the active species. For example, the plasma generation unit 202 can generate active species by plasma discharge of gases such as NF3, H2, N2, O2, C3F8, CF4, Cl2, SiH4, and Ar. The process unit 402 can perform operations such as dry etching, PECVD, PVD, ashing, and cleaning via the active species generated by the plasma generation unit 202.

[0066] 1.2 Plasma discharge device 1.2.1 Structure of a Plasma Discharge Device According to one embodiment, an apparatus for performing plasma discharge can be provided.

[0067] Figure 3 is a diagram illustrating a plasma generation apparatus according to one embodiment. Referring to Figure 3, the plasma generation apparatus according to one embodiment may include a frequency-variable RF power supply 101 and a plasma generation unit that is powered by the RF power supply 101 and generates plasma. Referring to Figure 3, the plasma generation unit may include a discharge tube 210, gas tubes 211 and 213 located inside the discharge tube 210, and an antenna module 220 that is positioned around the discharge tube 210 and is powered by the RF power supply unit 120 to form an inductive electric field and generate plasma inside the discharge tube 210. The plasma generation apparatus may include an electrode 230 to which a high-voltage pulse is applied by a DC power supply unit 110. The plasma generation apparatus may further include an auxiliary gas supply nozzle 250.

[0068] The RF power supply 101 can change its drive frequency within a variable frequency range. The RF power supply 101 can have a variable frequency range of several hundred kHz to several tens of MHz and a power of several tens of kW or more. For example, the RF power supply 101 can provide power of 8 kW or less. For example, the RF power supply 101 may be an AC power source that provides power at frequencies within the range of 100 kHz to 5 MHz.

[0069] The RF power supply 101 can perform impedance matching by changing the drive frequency. The RF power supply 101 can operate the plasma generation unit in a resonant state by changing the drive frequency.

[0070] The RF power supply 101 may include a rectifier that converts commercial AC power to DC power, a controller that provides switching signals to control the drive frequency and power, and an inverter that converts the DC power to RF power based on the switching signals of the controller.

[0071] The discharge tube 210 can be provided in a cylindrical tube shape. The outer diameter of the discharge tube 210 may be several centimeters to several tens of centimeters. The inner diameter of the discharge tube 210 may be several millimeters to several centimeters smaller than the outer diameter.

[0072] The discharge tube 210 may be a dielectric discharge tube. The discharge tube 210 can be made of a non-conductive material such as ceramic (e.g., alumina or AlN), sapphire, or quartz.

[0073] The discharge tube 210 can provide a discharge region where the plasma is located. The pressure inside the discharge tube 210 can be adjusted to be different from the pressure outside. The pressure inside the discharge tube 210 can be adjusted as needed to an ultra-low pressure conforming to a vacuum, a low pressure of a few milliliters, or a normal pressure above atmospheric pressure.

[0074] The gas tubes 211 and 213 can provide a path for supplying gas to the discharge tube 210 and the interior of the discharge tube 210. The gas tubes 211 and 213 can suppress contact of the plasma with the inner wall of the discharge tube 210 and ensure plasma stability.

[0075] There may be one or more gas tubes 211 and 213. The gas tubes may include a first gas tube 211 and a second gas tube 213. The first gas tube 211 and the second gas tube 213 may have a concentric structure. The first gas tube 211 may provide an introduction route for a first gas (e.g., a reaction gas such as methane gas). The second gas tube 213 may provide an introduction route for a second gas having a different composition from the first gas (e.g., a gas mainly composed of carbon dioxide).

[0076] The first gas tube 211 and the second gas tube 213 can provide swirl flow. For example, the first gas tube 211 can provide inner swirl flow, and the second gas tube 213 can provide outer swirl flow.

[0077] The plasma generator may include an antenna module 220. The antenna module 220 is powered by the RF power supply unit 120 and can generate a plasma discharge inside the discharge tube 210. The antenna module 220 will be described in more detail below with reference to Figure 12.

[0078] The antenna module 220 is powered by the RF power supply unit 120 and can induce a plasma discharge inside the discharge tube 210. The antenna module 220 is powered by the RF power supply unit 120 and can generate energy-coupled plasma and / or inductively coupled plasma inside the discharge tube 210.

[0079] The antenna module 220 may include a solenoid coil wound several times in a row around the discharge tube 210. The antenna module 220 may also include multiple turns wound around the discharge tube 210 and auxiliary capacitors placed between each turn.

[0080] The plasma generator may include DC electrodes 230 located around the antenna module 220. The plasma generator may also include one or more electrodes connected to the DC power supply unit 110. The DC electrodes 230 will be described in more detail below.

[0081] The auxiliary gas supply nozzle 250 can supply auxiliary gas into the discharge tube 210. The auxiliary gas supply nozzle 250 can be positioned close to the other end of the discharge tube 210 opposite the end into which the gas is injected. The auxiliary gas supply nozzle 250 may be positioned around the discharge tube 210, between the antenna module 220 and the gas outlet (outlet of the discharge tube 210).

[0082] The plasma generator may further include a safety case 190 that encloses the discharge tube 210 and antenna module 220, shielding them from external influences while ensuring safety.

[0083] 1.2.2 DC Power Supply and DC Electrodes A plasma discharge apparatus according to one embodiment may include an electrode to which a high voltage is applied. A plasma discharge apparatus according to one embodiment may include a DC electrode to which a high voltage is applied by a DC power supply. When a high voltage is applied to the DC electrode by a DC power supply, an electric field can be formed inside the discharge tube. When a high voltage is applied to the DC electrode by a DC power supply, a strong electric field can be formed in a predetermined direction, providing a seed charge inside the discharge tube. By providing a seed charge inside the discharge tube, the DC electrode can induce, promote, or assist plasma discharge.

[0084] The DC electrode can obtain a high voltage from a DC power supply. The DC power supply can apply a high voltage pulse to the DC electrode. The DC power supply can apply a high voltage pulse to the DC electrode at predetermined time intervals. The intensity and amplitude of the high voltage pulse may be given by predetermined values.

[0085] A plasma discharge apparatus can apply a high voltage (or high voltage pulse) to an electrode (or DC electrode) via a power supply (or DC power supply). Throughout this specification, the high voltage applied to the electrode can be understood to include various forms of DC voltage signals. The high voltage applied to the electrode can include various forms of DC voltage signals other than alternating current. For example, the high voltage applied to the electrode may have a spherical (square or rectangular) pulse waveform. Alternatively, for example, the high voltage applied to the electrode may have a pulse waveform consisting of a portion of a sine wave (e.g., half a period).

[0086] According to one embodiment, the plasma discharge device can change the voltage (or high-voltage pulse) signal applied to the electrode (or DC electrode) as needed. The plasma discharge device can gradually or sequentially increase or decrease the magnitude of the voltage applied to the electrode.

[0087] The following sections will describe DC electrodes and DC power supplies using several examples.

[0088] Figure 4 is a diagram illustrating a DC electrode according to one embodiment.

[0089] Referring to Figure 4(a), a plasma generator according to one embodiment may include one or more electrodes located around an antenna module 220 that causes a plasma discharge and connected to a DC power supply. The plasma generator may include a first electrode 231 located above the antenna module 220 and a second electrode 233 located below the antenna module 220.

[0090] Referring to Figure 4(b), the plasma generator may include a first electrode 231 located on the outer surface of the discharge tube and above the induction coil 221 of the antenna module 220, and a second electrode 233 arranged to surround the outer surface of the discharge tube and below the induction coil 221. Referring to Figure 4(b), the first electrode 231 may be in the form of a rectangular plate. The second electrode 233 may be "C" shaped, or the second electrode 233 may include multiple slits. To prevent vortex flow in the second electrode 233 due to the influence of the induced electric fields E1 and E2 formed by the induction coil, the second electrode 233 may have an open loop structure that does not completely enclose the outer wall of the discharge tube.

[0091] A DC power supply can apply a positive high voltage to the first electrode 231 and a negative high voltage to the second electrode 233. When a high-voltage pulse is applied between the first electrode 231 and the second electrode 233 by the DC power supply, a storage-coupled plasma discharge, such as a vertical streamer discharge, can occur between the first electrode 231 and the second electrode 233.

[0092] Figure 5 is a diagram illustrating a DC power supply according to one embodiment.

[0093] Referring to Figure 5(a), the DC power supply includes an AC-DC converter 111 that converts commercial AC power to DC voltage, a high-voltage pulse generator 113 that generates positive DC high-voltage pulses via the DC voltage, and a controller 112 that controls the high-voltage pulse generator.

[0094] Figure 5(b) is a diagram illustrating one embodiment of the high-voltage pulse generator described in Figure 5(a).

[0095] Referring to Figure 5(b), a high-voltage pulse generator 113 according to one embodiment may include: a first transformer 113a including a primary coil for acquiring a DC voltage from an AC-DC converter and a secondary coil for generating a positive DC high-voltage pulse; a first power transistor 113b connected to the primary coil of the first transformer 113a; a second transformer 113c including a primary coil for acquiring a DC voltage from an AD-DC converter and a secondary coil for generating a negative DC high-voltage pulse; and a second power transistor 113d connected to the primary coil of the second transformer. The control unit 112 can control the gates of the first transistor 113b and the second transistor 113d. One end of the secondary coil of the first transformer 113a is grounded, and the other end of the secondary coil of the first transformer 113a can output a positive DC high-voltage pulse Vo1. One end of the secondary coil of the second transformer 113c is grounded, and the other end of the secondary coil of the second transformer 113c can output a negative DC high-voltage pulse Vo2.

[0096] The DC voltage Vin can be a DC power supply of 12 to 24V. The control unit 112 can synchronize the on-time and repetition frequency of the first power transistor 113b and the second power transistor 113d. The voltage of the DC high-voltage pulse can be several tens of kV, for example, 10 to 50 kV. The repetition frequency of the DC high-voltage pulse can be several kHz to several tens of kHz, for example, 10 kHz to 100 kHz.

[0097] Figure 6 illustrates a discharge electrode according to another embodiment.

[0098] Referring to Figure 6(a), a plasma generation apparatus according to one embodiment may include an electrode 231 located around an antenna module 220 that causes a plasma discharge and connected to a DC power supply 110.

[0099] The plasma generator can apply a high voltage to the electrode 231 via a DC power supply 110 to induce a storage-coupled discharge between the electrode 231 and a surrounding object (e.g., a metal object located inside / outside the discharge tube). The plasma generator can also apply a high voltage to the electrode 231 via a DC power supply 110 to induce a storage-coupled discharge between the electrode 231 and a grounded gas tube 211 located inside the discharge tube. The plasma generator can induce a discharge between the gas tube 211 and the electrode 231 to provide a seed charge; that is, the gas tube 211 can act as the counter electrode. However, this is only one embodiment, and another grounded conductor located around or inside the discharge tube can also act as the counter electrode.

[0100] Referring to Figure 6(b), the plasma generator may include an electrode 231 located on the outer surface of the discharge tube and above the induction coil 221 of the antenna module 220. The electrode 231 may be in the form of a rectangular plate. The plasma generator can induce a discharge between the electrode 231 and the gas tube 211 located inside the discharge tube and grounded by applying a positive high voltage to the electrode 231 in the form of a rectangular plate located on the outer surface of the discharge tube via a DC power supply. When a high-voltage pulse is applied to the electrode 231 by the DC power supply, a storage-coupled plasma discharge, such as a streamer discharge, can occur between the electrode 231 and the gas tube 211.

[0101] Figure 7(a) is a diagram illustrating a power supply according to one embodiment. Figure 7(b) is a diagram illustrating an embodiment of the high-voltage pulse generator described in Figure 7(a). In the power supply and high-voltage pulse generator of Figures 7(a) and (b), the contents described in Figure 5 can be applied similarly unless otherwise specified.

[0102] Referring to Figure 7(b), a high-voltage pulse generator 113 according to one embodiment may include a transformer 113e having a primary coil for acquiring a DC voltage from an AC-DC converter and a secondary coil for generating a positive DC high-voltage pulse, and a transistor 113f connected to the primary coil of the transformer 113e. The control unit 112 can control the gate of the transistor 113f. One end of the secondary coil of the transformer 113e is grounded, and the other end of the secondary coil of the transformer 113e can output a positive DC high-voltage pulse Vout.

[0103] 1.2.3 RF Power Supply and Antenna Module The plasma generator may include one or more inductive electrodes inside the discharge tube to induce a discharge. The plasma generator may also include one or more antenna modules that induce an inductively coupled plasma discharge when powered from an RF power supply. The antenna modules may operate differently depending on their form and the frequency of the input power signal. Several embodiments of antenna modules are described below.

[0104] 1.2.3.1 Type 1 Antenna Module Figure 8 shows an operation illustrating the configuration of an antenna module according to one embodiment. Referring to Figure 8, the antenna module 223 according to one embodiment may include a first capacitor 223a, an induction coil 223b, and a second capacitor 223c.

[0105] The first capacitor 223a can be connected between one end of the induction coil 223b and the RF power supply, and the second capacitor 223c can be connected between the other end of the induction coil 223b and the RF power supply. The first capacitor 223a and the second capacitor 223c can have the same energy storage capacity.

[0106] The induction coil 223b can be located between the first capacitor 223a and the second capacitor 223c. The induction coil 223b may be a multilayer solenoid coil. The induction coil 223b may be a solenoid coil wound multiple times in multiple layers on the outer surface of the discharge tube. The unit turns constituting the induction coil 223b can be wound to form a reinforcing and interfering magnetic field inside the discharge tube in response to an AC power source. The induction coil 223b may also be a solenoid coil wound multiple times in one direction on the outer surface of the discharge tube.

[0107] The induction coil 223b may be a solenoid coil that is tightly wound to maximize the number of windings per unit length of the discharge tube. Although simply shown in Figure 5, the induction coil 223b may be a solenoid coil with more windings than that shown in Figure 8. For example, the induction coil 223b may have a three-layer structure including an inner solenoid coil, an intermediate solenoid coil, and an outer solenoid coil connected to each other.

[0108] The induction coil 223b may have a pipe-like shape through which the refrigerant can flow. The induction coil 223b may be made of copper pipe. The cross-section of the induction coil 223b may be circular or square.

[0109] The first capacitor 223a, the induction coil 223b, and the second capacitor 223c are connected in series and can resonate at a first frequency. The first frequency can be determined by the respective storage capacities C1 of the first capacitor 223a and the second capacitor 223c and the inductance L1 of the induction coil 223b.

[0110] Figure 9 is a diagram illustrating the operation of the antenna module shown in Figure 8 at its resonant frequency.

[0111] Referring to Figure 9, the antenna module can resonate at a first frequency determined by the respective storage capacities C1 of the first capacitor 223a and the second capacitor 223c and the inductance L1 of the induction coil 223b. When power is supplied at the first frequency, the first capacitor 223a and the second capacitor 223c can induce a voltage drop opposite to that of the induction coil 223b, such that the magnitude of the voltage Va induced across the induction coil 223b is minimized.

[0112] In the resonant state, the first capacitor 223a and the second capacitor 223c can cancel out the reactance of the induction coil 223b. The plasma generator can perform impedance matching by supplying power to the antenna module at a first frequency such that the reactance of the induction coil 223b is canceled out by the first capacitor 223a and the second capacitor 223c. The first capacitor 223a and the second capacitor 223c can be arranged symmetrically with respect to the induction coil 223b to reduce the voltage applied across the induction coil 223b.

[0113] 1.2.3.2 Type 2 Antenna Module Figure 10 shows the operation to illustrate the configuration of an antenna module according to several embodiments. Figures 10(a), (b), and (c) illustrate antenna modules prepared with different numbers of induction coil turns per unit length of discharge tube. The antenna modules shown in Figures 10(a), (b), and (c) can each exhibit different discharge characteristics.

[0114] A plasma generator exhibits characteristics of lower energy loss and a narrower discharge window when the number of turns per unit length of the discharge tube of the induction coil constituting the antenna module is small. Conversely, a plasma generator exhibits characteristics of higher energy loss and higher energy loss when the number of turns per unit length of the discharge tube of the induction coil constituting the antenna module is large, which is advantageous for maintaining the discharge and widens the discharge window.

[0115] Referring to Figure 10(a), the antenna module 235 may include unit coils 235b wound one turn per layer, and interlayer capacitors 235a connecting the unit coils of each layer. The 12*1 turn antenna module 235 shown in Figure 10(a) can be configured so that all antenna unit turns are in close contact with the outer surface of the discharge tube. The antenna module 235 shown in Figure 10(a) has a low number of turns per unit length (N / L), which allows for relatively low discharge efficiency, lower energy loss, and relatively high process performance.

[0116] Referring to Figure 10(b), the antenna module 237 may include a unit coil 237b wound with 2 turns per layer, and an interlayer capacitor 237a connecting the unit coils of each layer. The 6*2 turn antenna module 237 shown in Figure 10(b) has a larger number of turns per unit length (N / L) than the antenna module 235 in Figure 10(a). The antenna module 237 shown in Figure 10(b) can exhibit higher discharge efficiency than the antenna module 235 in Figure 10(a). Discharge efficiency can be proportional to the number of turns per unit length (N / L). For example, the antenna module 237 shown in Figure 10(b) can have twice the discharge efficiency of the antenna module 235 in Figure 10(a).

[0117] Referring to Figure 10(c), the antenna module 239 may include a unit coil 239b wound with 3 turns per layer, and an interlayer capacitor 239a connecting the unit coils of each layer. The antenna module 239 has a larger number of turns per unit length (N / L) than the antenna modules 235 and 237 in Figures 10(a) and (b), and can have a higher discharge efficiency than the antenna modules 235 and 237 in Figures 10(a) and (b). The antenna module 239 may have characteristics that make it easier to maintain discharge under gas conditions where discharge is difficult, compared to the antenna modules 235 and 237 in Figures 10(a) and (b).

[0118] The antenna modules shown in Figures 10(a), (b), and (c) may have different inductances. Antenna module 235 in (a) may have a first inductance, antenna module 237 in (b) may have a second inductance, and antenna module 239 in (c) may have a third inductance. The second inductance may be greater than the first inductance, and the third inductance may be greater than the second inductance.

[0119] Figure 11 is a diagram illustrating the operation of the antenna module shown in Figure 11 at its resonant frequency. Below, with reference to Figure 11, the voltage distribution at the resonant frequency of the antenna module shown in Figure 11(c) will be explained.

[0120] Referring to Figure 11, an antenna module according to one embodiment may include a plurality of unit coils 239b, interlayer capacitors 239a arranged between the plurality of unit coils, and, although not shown, terminal capacitors 239c connected to the unit coils located at the upper and lower ends, respectively.

[0121] The antenna module can resonate at a second frequency determined by the energy storage capacity of the interlayer capacitor 239a, the inductance of the unit coil 239b, and the energy storage capacity of the terminal capacitor 239c.

[0122] To minimize the voltage applied to the unit coil 239b, the storage capacity of the terminal capacitor 239c can be determined to be twice the storage capacity of the interlayer capacitor 239a. In this case, the antenna module can resonate at a second frequency determined by the storage capacity C2 of the interlayer capacitor 239a, the inductance L2 of the unit coil 239b, and the storage capacity 2*C2 of the terminal capacitor 239c. Referring to Figure 11, the interlayer capacitor 239a can be represented by a pair of virtual capacitors connected in series, each having a storage capacity of 2*C2.

[0123] In a resonant state, multiple interlayer capacitors 239a and terminal capacitors 239c can reduce the voltage applied to the end of the unit coil 239b. When power is supplied to the antenna module at a second frequency, the interlayer capacitors 239a and terminal capacitors 239c can induce a voltage drop opposite to that of the induction coil 239b so that the magnitude of the voltage Vb induced across the induction coil 239b is minimized.

[0124] The interlayer capacitor 239a and the terminal capacitor 239c can cancel out the reactance of the induction coil 239b. The plasma generator can perform impedance matching by supplying power to the antenna module at a second frequency such that the reactance of the induction coil 239b is canceled out by the interlayer capacitor 239a and the terminal capacitor 239c. The terminal capacitor 239c can be placed symmetrically with respect to the induction coil 239b to reduce the voltage applied across the induction coil 239b. The interlayer capacitor 239a can be placed between each layer of the induction coil 239b to minimize the interlayer voltage difference between unit induction coils 239b and prevent energy storage coupling.

[0125] As the reactance of the induction coil 239b is canceled out by the interlayer capacitor 239a and / or terminal capacitor 239c, the voltages at each unit coil 239b can have a corresponding relationship. For example, in a resonant state, the voltage between one end and the other end of one unit coil 239b can correspond to the voltage between one end and the other end of another unit coil 239b. The potential at one end of one unit coil 239b can correspond to the potential at one end of another unit coil 239b.

[0126] As a specific example, an antenna module may include a first unit coil (or unit turn) having one end and the other, a first interlayer capacitor connected in series with the other end of the first unit coil, and a second unit coil having one end and the other, with one end connected in series with the first interlayer capacitor. When the antenna module is in a resonant state, the potential at one end of the first unit coil can correspond to the potential at one end of the second unit coil. When the antenna module is in a resonant state, the voltage between one end and the other end of the first unit coil can correspond to the potential between one end and the other end of the second unit coil. When the antenna module is in a resonant state, the voltage between one end and the other end of the first unit coil can correspond to the voltage between one end of the first unit coil and the other end of the second unit coil.

[0127] Figure 12 is a diagram illustrating the structure of the antenna module exemplified in Figure 11(c). An antenna module according to one embodiment may include a plurality of unit coils 239b and interlayer capacitors 239c placed between the plurality of unit coils. Figure 12 shows the unit coils 239b of an antenna module according to one embodiment.

[0128] The unit coil 239b may include multiple turns TU1, TU2, and TU3. The unit coil 239b may include a first end TE1, a first turn TU1 connected to the first end TE1, a first projection PR1 connected to the first turn TU1, a second turn TU2 connected to the first projection PR1, a second projection PR2 connected to the second turn TU2, a third turn TU3 connected to the second projection PR2, and a second end TE2 connected to the third turn TU3.

[0129] The unit coil 239b may have an open portion that is open in one direction (referring to Figure 12, the x-axis direction). The first end TE1 and the second end TE2 of the unit coil 239b may form an open portion that is open in one direction.

[0130] Each turn TU1, TU2, and TU3 can be arranged on the same plane. Each turn TU1, TU2, and TU3 can have a predetermined central angle. The central angle of each turn can be 270 degrees or greater. Each turn TU1, TU2, and TU3 can be arranged to have the same central axis and may have different radii from each other.

[0131] Each projection PR1 and PR2 can be arranged in a "U" shape by connecting turns with different radii. The first projection PR1 can connect one end of the first turn TU1 to one end of the second turn TU2.

[0132] The first end TE1 or the second end TE2 can be connected to the interlayer capacitor 239c or the end capacitor 239a. For example, the first end TE1 can be connected to the end capacitor 239a, and the second end TE2 can be connected to the interlayer capacitor 239c.

[0133] On the other hand, the antenna module may include a plurality of unit coils 239b. The plurality of unit coils may be rotatably arranged with respect to the central axis of the discharge tube. For example, the first unit coil may be arranged such that its projection PR faces a first direction with respect to the central axis of the discharge tube, and the second unit coil may be arranged such that its projection PR faces a second direction with respect to the central axis of the discharge tube, and the first and second directions may form a predetermined angle with respect to the central axis of the discharge tube. For example, the predetermined angle may be 90 degrees.

[0134] Figure 13 is a block diagram illustrating an RF power supply according to one embodiment. Referring to Figure 13, the RF power supply device 1000 according to one embodiment may include an AC power supply 1100, a power supply device 1200, and a load 1400.

[0135] The AC power supply 1100 may be a conventional 60Hz power supply used in a home or industrial setting. The load 1400 may be an electrical or electronic device used in a home or industrial setting. The load 1400 may be a plasma generating device as described herein.

[0136] The power supply device 1200 can convert the first AC power supply into a second AC power supply and supply it to the load 1400. For example, the second AC power supply has a driving frequency of several hundred kHz to several tens of MHz and can provide several kW or more of power. The power supply device 1200 may include a rectifier 1210, a capacitor 1220, an inverter 1230, an impedance matching circuit 1300, and a controller 1250.

[0137] The rectifier 1210 can convert the output of the AC power supply 1100 into a DC power supply. The rectifier 1210 can supply the DC power supply between the ground node GND and the power supply node VP. The capacitor 1220 may be connected between the power supply node VP and the ground node GND. The capacitor 1220 can discharge the AC component transmitted to the power supply node VP to the ground node GND.

[0138] The inverter 1230 can receive DC power from the power node VP and the ground node GND. The inverter 1230 can receive a switching signal SW from the controller 1250. In response to the switching signal SW, the inverter 1230 can convert the DC power to a second AC power. The second AC power can be supplied to the load 1400 via the impedance matching circuit 1300. The impedance matching circuit 1300 can provide impedance matching to the impedance of the load 1400.

[0139] The controller 1250 can transmit a switching signal SW to the inverter 1230. The controller 1250 can control the switching signal SW so that the inverter 1230 converts the DC power supply to a second AC power supply. The controller 1250 can control the switching signal SW to adjust the amount of power supplied from the inverter 1230 to the load 1400.

[0140] 1.3 Plasma discharge operation According to one embodiment, a method for performing plasma discharge can be provided.

[0141] A method for performing a plasma discharge according to one embodiment may include the steps of providing a seed charge and performing a plasma discharge. The method for performing a plasma discharge may include applying a high-voltage pulse to a DC electrode via a DC power supply to form a seed charge in a discharge tube. The method for performing a plasma discharge may include applying an RF voltage to an antenna module via an RF power supply to induce a plasma discharge in a discharge tube.

[0142] The operation of the plasma discharge apparatus or the method of performing a plasma discharge will be described below with reference to Figure 14. For convenience, the following description will be based on a DC electrode with one electrode, but this is not mandatory, and the plasma discharge apparatus may also include a counter electrode.

[0143] Figure 14 is a diagram illustrating the operation of a plasma discharge apparatus according to one embodiment, as described herein.

[0144] Referring to Figure 14(a), a method for performing plasma discharge may include the plasma discharge apparatus applying a high voltage to the DC electrode 231 via a DC power supply 101. A method for performing plasma discharge may also include applying a high voltage to the DC electrode 231 via a DC power supply 101 to form a first electric field E1. The first electric field E1 may be formed between the electrode 231 and the gas tube 211.

[0145] A method for performing plasma discharge may include a plasma discharge apparatus applying a high voltage to a DC electrode 231 via a DC power supply 101 to form a seed charge in the discharge tube. A plasma discharge method can generate a seed charge by applying a high voltage to the DC electrode 231 to form a high-density electric field between the DC electrode 231 and the gas tube 211, thereby inducing a concentration of charge.

[0146] Referring to Figure 14(b), the method for performing a plasma discharge may include applying an RF voltage to the antenna module 220 via the RF power supply 102.

[0147] A method for performing plasma discharge may include applying an RF voltage to the antenna module 220 via an RF power supply 102 to form a second electric field E2 within the discharge tube. A method for performing plasma discharge may also include applying an RF voltage to the antenna module 220 via an RF power supply 102 to form a second electric field E2 and generate a seed charge and / or plasma. A method for performing plasma discharge may also include forming a second electric field E2 to generate a storage-coupled plasma.

[0148] The second electric field E2 can be formed along the axis of the discharge tube. The second electric field E2 can also be formed along the longitudinal direction of the induction coil of the antenna module 220.

[0149] A method for performing plasma discharge may include applying an RF voltage to the antenna module 220 via an RF power supply 102 to form a third electric field E3 within the discharge tube. A method for performing plasma discharge may also include generating plasma within the discharge tube by forming a third electric field E3 within the discharge tube. A method for performing plasma discharge may also include applying an RF voltage to the antenna module 220 via an RF power supply 102 to form a third electric field E3 and generate a seed charge and / or plasma.

[0150] The third electric field E3 can be formed in a direction aligned with the induction coil of the antenna module. The third electric field E3 can also be formed in a direction aligned with the circumferential direction of the discharge tube.

[0151] 2. Ignition Assistance Implementation As mentioned above, when the initial discharge (ignition) of the plasma is performed by supplying a seed charge by applying a DC voltage, there is an advantage in that plasma generation can be made easier.

[0152] However, supplying seed charge by applying a DC voltage relies on a group of charges formed by the creation of an electric field, which may in some cases lead to damage to the equipment. For example, the electric field formed by the DC voltage is directed toward the inner wall of the gas tube or other structures, so particles or electrons accelerated by the electric field can collide with the inner wall of the gas tube, etc. Such unintended collisions can lead to damage to the inner wall of the gas tube or other structures and the generation of impurities such as particles. Damage to the equipment leads to equipment degradation and adversely affects the equipment's lifespan, and the generation of impurities can act as a factor that reduces the quality of the active species produced by the equipment.

[0153] However, depending on the type of gas, the formation of an induced electric field (or energy storage electric field) via the RF power supply and antenna module alone may not adequately create the environment necessary for the initial discharge of the plasma. On the other hand, under certain discharge conditions, the initial discharge of the plasma can be smoothly achieved using only the induced electric field (or energy storage electric field) via the RF power supply and antenna module, without the application of a DC voltage via the DC power supply.

[0154] Therefore, depending on the plasma discharge state, there is a need for a method to assist the initial discharge of the plasma while minimizing damage to the device and particle generation by appropriately changing the application of DC voltage, the intensity of the DC high-voltage pulse, or the intensity of the RF voltage.

[0155] The following describes, in several embodiments, a plasma generator and / or a control method for a plasma generator that assists plasma generation by controlling the output of DC high-voltage pulses and / or AC power. The following describes a plasma device and / or a control method for a plasma device that applies DC voltage and / or RF voltage in steps based on changes in the plasma state in order to achieve the above objective.

[0156] The control methods for plasma generators described herein can be performed by the plasma generator or a controller built into the plasma generator. The plasma generator may include a controller that performs the control methods for plasma generators described herein or a controller that performs such methods.

[0157] Furthermore, it will be obvious to those skilled in the art that the embodiments of the plasma generation apparatus described herein can provide a control method for the corresponding plasma generation apparatus, and that the embodiments of the control method for the plasma generation apparatus provided herein can provide the corresponding plasma generation apparatus.

[0158] 2.1 Equipment Figure 15 is a diagram illustrating a plasma generation apparatus according to one embodiment.

[0159] Referring to Figure 15, a plasma generation apparatus 2000 according to one embodiment may include a chamber 2010 that provides a plasma generation space, an antenna module 2030 located around the chamber 2010 and powered by a first power supply P1, an electrode 2050 located around the chamber 2010 and powered by a second power supply P2, a sensor 2070, and a controller 2090 that controls the first power supply P1 and the second power supply P2.

[0160] The antenna module 2030 is positioned around the chamber and connected to a first power supply, and can form an induced electric field within the chamber. The electrode 2050 is positioned around the chamber and connected to a second power supply, and can assist in the generation of the plasma.

[0161] Sensor 2070 can acquire sensing information regarding the state of the plasma. Sensor 2070 can acquire power, current, or voltage at a location in the plasma generator. For example, sensor 2070 can acquire sensing information indicating the power supplied to the load by the first power supply. Sensor 2070 can acquire sensing information indicating the current flowing to the load and / or the voltage applied to the load by the first power supply.

[0162] The controller 2090 can supply AC power (or AC voltage or RF power) to the antenna module 2030 via the first power supply P1. The controller 2090 can generate switching signals to control the inverter of the first power supply P1 and transmit them to the first power supply P1 to control the output of the first power supply P1.

[0163] The controller 2090 can apply a high-voltage pulse to the electrode 2050 via the second power supply P2. The controller 2090 can generate a pulse control signal to control the pulse generator of the second power supply P2 and transmit it to the second power supply P2 to control the output of the second power supply P2.

[0164] The controller 2090 can acquire sensing information regarding the state of the plasma via the sensor 2070. Based on the acquired sensing information, the controller 2090 can change the operating state of the first power supply P1 and / or the second power supply P2.

[0165] According to one embodiment, if the sensing information at the second time point does not satisfy the predetermined conditions, the controller 2090 can apply the high-voltage pulse at the first voltage to the electrode via the second power supply, and if the sensing information at the third time point after the second time point does not satisfy the predetermined conditions, the controller can apply the high-voltage pulse at the second voltage, which is greater than the first voltage, via the second power supply.

[0166] In another embodiment, the controller 2090 can apply the high-voltage pulse to the electrode in a first cycle if, at the second time point, the sensing information does not satisfy the predetermined conditions, and at the third time point, which is one hour after the second time point, if the sensing information does not satisfy the predetermined conditions, the high-voltage pulse can be applied to the electrode in a second cycle shorter than the first cycle.

[0167] In another embodiment, the controller 2090 applies the RF voltage to the load at a first magnitude from the first time point, and if the sensing information does not satisfy the predetermined conditions at a third time point which is after the first time point but before the second time point, the controller 2090 can apply the RF voltage to the load at a second magnitude which is greater than the first magnitude.

[0168] On the other hand, if the sensing information at the second time point does not satisfy the predetermined conditions, the controller 2090 can apply the high-voltage pulse at the first voltage to the electrode via the second power supply, and if the sensing information at the third time point, which is delayed from the second time point, satisfies the predetermined conditions, it can interrupt the application of the high-voltage pulse.

[0169] 2.2 Control Method Figure 16 is a diagram illustrating a control method for a plasma generation apparatus according to one embodiment.

[0170] Referring to Figure 16, a control method for a plasma generation apparatus according to one embodiment may include the steps of: applying an RF voltage to a load (S110); acquiring sensing information regarding the state of the plasma (S130); and controlling a second power supply based on the sensing information (S150).

[0171] According to one embodiment, a plasma generator 2000 can be provided, which includes a chamber 2010 that provides a plasma generation space, an antenna module 2030 located around the chamber 2010 and powered by a first power supply P1, an electrode 2050 located around the chamber 2010 and powered by a second power supply P2, a sensor 2070, and a controller 2090 that controls the first power supply P1 and the second power supply P2.

[0172] Step S110, which involves applying an RF voltage to the load, may include the controller 2090 applying an RF voltage to the load, including the antenna module, via the first power supply P1 from a first time point in time.

[0173] Step S130, which involves acquiring sensing information regarding the state of the plasma, may include the controller 2090 acquiring the sensing information regarding the state of the plasma based on the RF voltage.

[0174] Step S150, which controls the second power supply P2 based on sensing information, may include the controller 2090 controlling the second power supply P2 based on the sensing information from a second time point a predetermined time after the first time point.

[0175] Step S150, in which the controller 2090 controls the second power supply P2, may include the controller 2090 operating under predetermined conditions provided such that, if the sensing information indicates that the plasma was not generated in the chamber, it applies the pulse to the electrode 2050 via the second power supply P2, and if the sensing information indicates that the plasma was generated in the chamber, it does not apply the pulse to the electrode 2050.

[0176] According to one embodiment, step S150, in which the controller 2090 controls the second power supply P2, may include the controller 2090 not applying a high-voltage pulse to the electrode 2050 via the second power supply P2 if the sensing information satisfies predetermined conditions at the second time, and applying the high-voltage pulse to the electrode 2050 via the second power supply P2 if the sensing information does not satisfy the predetermined conditions at the second time. This will be explained in more detail in the following Embodiment 1.

[0177] The controller 2090 can acquire sensing information regarding the power supplied to the load from the first power supply P1 via the sensor 2070. In this case, the controller 2090 may control the second power supply P2 by applying the pulse voltage to the electrode 2050 if the sensing information at the second time point indicates that the power supplied to the load is less than or equal to a reference power, and by not applying the pulse voltage to the electrode 2050 if the sensing information at the second time point indicates that the power supplied to the load is greater than or equal to a reference power.

[0178] In one embodiment, the first power supply P1 includes a DC power supply and an inverter that converts the DC power supply into RF power, and the sensor 2070 is located between the DC power supply and the inverter of the first power supply P1 and can acquire a first voltage output by the DC power supply and a first current output from the DC power supply. In this case, the controller 2090 controlling the second power supply P2 may include the controller 2090 controlling the second power supply P2 based on the power supplied to the load determined based on the first voltage and the first current.

[0179] According to one embodiment, the sensor 2070 can acquire sensing information related to the second current flowing through the antenna module 2030. The controller 2090 controlling the second power supply P2 may include, when the controller acquires the sensing information and the phase difference between the second current and the RF voltage at a second time does not satisfy the predetermined condition, applying the pulse voltage to the electrode, and not applying the pulse voltage to the electrode when the phase difference between the second current and the RF voltage at a second time satisfies the predetermined condition.

[0180] A control method for a plasma generator may include applying a unit pulse of increased voltage to the electrode if plasma is not generated in response to the application of a unit pulse to the electrode.

[0181] According to one embodiment, the steps of the controller 2090 controlling the second power supply may further include the steps of the controller applying the high-voltage pulse at a first voltage to the electrode via the second power supply if the sensing information does not satisfy the predetermined conditions at the second time point, and not applying the high-voltage pulse to the electrode if the sensing information satisfies the predetermined conditions, and the controller applying the high-voltage pulse at a second voltage greater than the first voltage to the electrode via the second power supply if the sensing information does not satisfy the predetermined conditions at a third time point after the second time point.

[0182] The control method for the plasma generator may further include interrupting the operation of the second power supply when a plasma discharge occurs, that is, when sensing information regarding the plasma discharge is acquired.

[0183] According to one embodiment, the steps by which the controller 2090 controls the second power supply may include the steps of: the controller 2090 applying the high-voltage pulse at a first voltage to the electrode via the second power supply if the sensing information does not satisfy the predetermined conditions at the second time point; and the controller 2090 suspending the application of the high-voltage pulse if the sensing information satisfies the predetermined conditions at a third time point after the second time point.

[0184] A control method for a plasma generator may include applying a unit pulse to the electrode at a reduced time interval if plasma is not generated in response to the application of a unit pulse to the electrode.

[0185] According to one embodiment, the controller's control of the second power supply may further include, if, at the second time point, the sensing information does not satisfy the predetermined conditions, applying the high-voltage pulse to the electrode in a first cycle, and, at the third time point, which is one hour after the second time point, if the sensing information does not satisfy the predetermined conditions, applying the high-voltage pulse to the electrode in a second cycle shorter than the first cycle.

[0186] On the other hand, the above embodiment described a case in which the control method of the plasma generation device includes step S150 of controlling a second power supply P2 based on sensing information, but the invention described herein is not limited thereto. For example, the control method of the plasma generation device may include the step of controlling a first power supply P1 based on sensing information.

[0187] A control method for a plasma generation apparatus according to one embodiment may include applying an RF voltage to an antenna module with an increased amplitude if plasma is not generated in response to the application of a unit pulse to the electrode.

[0188] According to one embodiment, the controller applying the RF voltage to the load via the first power supply may further include applying the RF voltage to the load at a first magnitude from the first time point, and if the sensing information does not satisfy the predetermined conditions at a third time point which is after the first time point but before the second time point, applying the RF voltage to the load at a second magnitude which is greater than the first magnitude.

[0189] 2.3 DC High Voltage Application Modulation According to one embodiment, the plasma generator can determine whether or not to apply a DC high-voltage pulse based on predetermined conditions. The ability to apply a DC high-voltage pulse can be determined depending on the state of the plasma. The plasma generator can also determine whether or not to apply a DC high-voltage pulse depending on whether or not plasma ignition (or generation) is occurring.

[0190] As a specific example, the control method for a plasma generator may include applying an RF voltage to the antenna module to induce an initial discharge, and if the initial discharge (or ignition) does not occur within a predetermined time, applying a high-voltage pulse to the electrode to assist in the initial discharge. As illustrated, the plasma generator can suppress damage to the device or the generation of fine particles caused by high-voltage pulses by preferentially applying an RF voltage to the antenna module and applying a high-voltage pulse to the electrode only when an initial discharge does not occur.

[0191] As another specific example, a plasma generator can apply a unit high-voltage pulse to an electrode at least once, determine whether predetermined conditions for plasma generation have been met, and if the conditions are not met (i.e., plasma is not generated), change the output state of the high-voltage pulse. For example, a plasma generator or its controller can apply an RF voltage to an antenna module via a first power supply from a first time point, and if the sensing information does not meet the predetermined conditions at a second time point after the first time point (or from the second time point onward), it can apply the high-voltage pulse to the electrode via the second power supply to output a first power, and if the sensing information does not meet the predetermined conditions at a third time point after the second time point, it can apply the high-voltage pulse to the electrode via the second power supply to output a second power greater than the first power. The plasma generator applying the high-voltage pulse to the electrode to output a second power greater than the first power may include increasing the voltage of the high-voltage pulse or increasing the number of high-voltage pulses.

[0192] 2.3.1 Example 1 According to one embodiment, a plasma generation device can be provided that applies an RF voltage to an antenna module to acquire sensing information regarding the state of the plasma, and applies a high-voltage pulse to the electrode if the sensing information does not meet predetermined conditions within a predetermined time. According to one embodiment, the control method of the plasma generation device may include applying a high-voltage pulse to the electrode if plasma generation is not detected.

[0193] The plasma generator or its controller can, from a first time point in time, apply an RF voltage to the load including the antenna module via the first power supply, acquire sensing information regarding the state of the plasma based on the RF voltage, and from a second time point in time a predetermined time after the first time point, control the second power supply based on the sensing information.

[0194] The plasma generator or its controller can acquire sensing information from the first time point onward. The plasma generator or its controller can acquire sensing information regarding the state of the plasma, reflecting the changes caused by the RF voltage applied from the first time point onward. The plasma generator or its controller can control a second power supply based on sensing information acquired from the second time point onward, a predetermined time after the first time point. The plasma generator or its controller can control a second power supply based on sensing information acquired from the second time point onward.

[0195] The plasma generator or its controller applies a pulse voltage to the electrode via the second power supply if the sensing information does not meet the predetermined conditions at the second time point, but does not need to apply the pulse voltage to the electrode via the second power supply if the sensing information does meet the predetermined conditions at the second time point.

[0196] The plasma generator or its controller may operate according to predetermined conditions, provided that the controller applies the pulse to the electrode via the second power supply when the sensing information indicates that the plasma was not generated in the chamber, but does not apply the pulse to the electrode when the sensing information indicates that the plasma was generated in the chamber.

[0197] The plasma generator or its controller applies the pulse voltage to the electrode if the sensing information at the second time point indicates that the power supplied to the load is less than or equal to the reference power, but does not need to apply the pulse voltage to the electrode if the sensing information at the second time point indicates that the power supplied to the load is greater than or equal to the reference power.

[0198] According to one embodiment, the first power supply may include a DC power supply and an inverter that converts the DC power supply into RF power. The sensor is located between the DC power supply and the inverter of the first power supply and can acquire a first voltage output by the DC power supply and a first current output from the DC power supply.

[0199] The controller can apply the pulse voltage to the electrodes based on the power supplied to the load, which is determined based on the first voltage and the first current.

[0200] For example, a plasma generator can acquire the power value supplied to the load from a first power source via a sensor and control a second power source based on whether the acquired power value exceeds a predetermined condition value. If the acquired power value does not exceed the predetermined condition value, the plasma generator applies a high-voltage pulse to the electrode via the second power source, but if the acquired power value exceeds the predetermined condition value, it does not need to apply a high-voltage pulse to the electrode via the second power source. Alternatively, the plasma generator may control the second power source based on whether the acquired power value exceeds a predetermined ratio.

[0201] According to another embodiment, the sensor can acquire the sensing information based on the second current flowing through the antenna module.

[0202] The controller acquires the sensing information and applies the pulse voltage to the electrode if the phase difference between the second current and the RF voltage at the second time does not satisfy the predetermined conditions. However, if the phase difference between the second current and the RF voltage at the second time satisfies the predetermined conditions, the controller does not need to apply the pulse voltage to the electrode.

[0203] For example, a plasma generator can acquire phase information of the current flowing through the antenna module via a sensor, acquire phase information of the voltage applied to the antenna module from a switching signal generated by a controller, and determine whether predetermined conditions are met based on the phase information of the current flowing through the antenna module and the phase information of the voltage applied to the antenna module.

[0204] Figure 17 is a diagram illustrating a control method for a plasma generation apparatus according to one embodiment.

[0205] Referring to Figure 17, a control method for a plasma generation apparatus according to one embodiment may include the steps of: applying an RF voltage to a load S110; acquiring sensing information regarding the state of the plasma S130; determining whether the sensing information satisfies predetermined conditions S151; and, if the sensing information does not satisfy the predetermined conditions, applying a high-voltage pulse to the electrode S152.

[0206] A control method for a plasma generator may include applying an RF voltage to an antenna module, acquiring sensing information via a sensor at regular time intervals, and changing the operating state of a second power supply including a pulse generator based on the sensing information. For example, a control method for a plasma generator may include applying an RF voltage to an antenna module, acquiring sensing information via a sensor at regular time intervals, and changing the operating state of a second power supply including a pulse generator based on the sensing information.

[0207] Figure 18 is a diagram illustrating the output current and high-voltage pulse output according to the control method of the plasma generation apparatus 2000 in one embodiment. Below, the output current and high-voltage pulse output described in Figure 18 will be explained with reference to Figure 15.

[0208] Figure 18(a) shows the output current i flowing through the antenna module (or load) according to a control method for a plasma generation apparatus 2000 according to one embodiment. RF This figure shows the output current i.RF This can be the current flowing to the load or antenna module when the plasma generator 2000 drives the AC power supply of the first power supply P1. Output current i RF This can be an alternating current measured in the antenna module (or load) by applying an alternating voltage to the antenna module via an AC power supply from the plasma generation device.

[0209] A control method for the plasma generator 2000 according to one embodiment may include applying an AC voltage to the antenna module 2030 via a first power supply P1. Referring to Figures 18(a) and (b), the control method for the plasma generator 2000 may include applying an AC voltage to the antenna module 2030 from a first time point t1. The control method for the plasma generator 2000 applies an AC voltage to the antenna module 2030 via the first power supply P1 from a first time point, and the output current i flowing through the antenna module 2030 RF This can include obtaining...

[0210] A control method for the plasma generator 2000 according to one embodiment may include applying a high-voltage pulse to the electrode 2050 via a second power supply P2. Figure 18(b) shows the high-voltage pulse V according to the control method for the plasma generator 2000 according to one embodiment. ig This figure shows the waveform. Referring to Figure 18(b), the control method for the plasma generator 2000 may include applying a high-voltage pulse to the electrode 2050 at a constant period via the second power supply P2. The control method for the plasma generator 2000 may also include applying a high-voltage pulse to the electrode 2050 at a constant period (in the following example, the first time interval PT1) from the second time point t2 until plasma generation is detected.

[0211] Referring to Figure 18(b), a control method for the plasma generator 2000 according to one embodiment may include applying a high-voltage pulse to the electrode 2050 from a second time point t2 after a predetermined time interval PT from the first time point t1. The control method for the plasma generator 2000 may also include applying a first unit pulse UP1 to the electrode 2050 at the second time point t2 (or at least after the second time point t2).

[0212] The control method for the plasma generator 2000 may include obtaining information indicating the presence or absence of plasma generation via a separate power sensor, current sensor, or voltage sensor, and controlling the second power supply P2 based on the obtained information. The control method for the plasma generator 2000 may also include deciding whether or not to apply a high-voltage pulse based on information obtained via sensor 2070.

[0213] The control method for the plasma generator 2000 may include, in response to applying an AC voltage to the antenna module 2030 via a first power supply P1 from a first time point t1, applying a first unit pulse UP1 to the electrode 2050 at least from the second time point t2 onward if no plasma is generated in the chamber 2010 at a second time point t2.

[0214] The control method for the plasma generator 2000 may include applying a first unit pulse UP1 to the electrode 2050 at a second time point t2, and applying a second unit pulse UP2 to the electrode 2050 from the second time point t2 through a first time interval PT1 onwards.

[0215] The control method for the plasma generator 2000 may include applying a second unit pulse UP2 to the electrode 2050 after the first time interval PT1 from the second time point t2 if plasma does not occur after applying a first unit pulse UP1 to the electrode 2050 at the second time point t2. The control method for the plasma generator 2000 may also include applying a second unit pulse UP2 to the electrode 2050 after the first time interval PT1 from the second time point t2 if a plasma discharge does not occur in response to the application of the first unit pulse UP1 after applying a first unit pulse UP1 to the electrode 2050 at the second time point t2.

[0216] The control method for the plasma generator 2000 may include applying a second unit pulse UP2, and applying a third unit pulse UP3 to the electrode 2050 from the first time interval PT1 onwards, starting from the time the second unit pulse UP2 is applied.

[0217] The control method for the plasma generator 2000 may include interrupting the application of high-voltage pulses. The control method for the plasma generator 2000 may also include interrupting the application of high-voltage pulses to the electrode 2050 when plasma generation in the chamber 2010 is detected. Referring to Figure 18(b), the control method for the plasma generator 2000 may include interrupting the application of high-voltage pulses to the electrode 2050 in response to the application of a third unit pulse UP3 and the generation of plasma in the chamber 2010.

[0218] The control method for the plasma generator 2000 may include interrupting the application of high-voltage pulses based on values ​​obtained via a separate power sensor, current sensor, or voltage sensor. That is, the control method for the plasma generator 2000 may include obtaining a measurement value indicating the state of the plasma via sensor 2070 and interrupting the application of high-voltage pulses in response to obtaining a measurement value indicating that plasma has been generated.

[0219] 2.3.2 Example 2 According to one embodiment, a plasma generation device can be provided that acquires sensing information regarding the state of plasma and increases the voltage of a pulse applied to an electrode when the sensing information does not satisfy a predetermined condition. According to one embodiment, a control method of a plasma generation device can include increasing the voltage of a pulse applied to an electrode when plasma generation is not detected.

[0220] FIG. 19 is a diagram for explaining a control method of a plasma generation device according to an embodiment. Regarding the control method of the plasma generation device described in FIG. 19, the content of FIG. 16 can be similarly applied.

[0221] Referring to FIG. 19, a control method of a plasma generation device according to an embodiment can include a step S161 of determining whether the sensing information satisfies a predetermined condition after a step S130 of acquiring the sensing information regarding the state of the plasma described above, a step S162 of applying a high-voltage pulse to the electrode when the sensing information does not satisfy the predetermined condition, a step S163 of acquiring the sensing information again after applying the high-voltage pulse to the electrode and determining whether the acquired sensing information satisfies the predetermined condition, and a step S164 of increasing the voltage of the high-voltage pulse.

[0222] The control method of the plasma generation device can include periodically acquiring the sensing information and determining whether the acquired sensing information satisfies a predetermined condition. The control method of the plasma generation device can include periodically determining whether the sensing information satisfies a predetermined condition and increasing the voltage value of the high-voltage pulse when the sensing information does not satisfy the predetermined condition.

[0223] Referring to FIG. 19, the control method of the plasma generation device may include repeatedly executing step S162 of applying a high-voltage pulse to the electrode when the acquired sensing information does not meet a predetermined condition, step S163 of acquiring the sensing information again after applying the high-voltage pulse to the electrode and determining whether the acquired sensing information meets the predetermined condition, and step S164 of increasing the voltage of the high-voltage pulse.

[0224] FIG. 20 is a diagram for explaining the output of RF current and high-voltage pulse by the control method of the plasma generation device according to an embodiment.

[0225] Referring to FIG. 20, the control method of the plasma generation device according to an embodiment may include step S165 of determining whether the sensing information meets a predetermined condition after step S130 of acquiring the sensing information regarding the state of the plasma described above, step S166 of applying a high-voltage pulse at a first voltage to the electrode when the sensing information does not meet the predetermined condition, step S167 of determining whether the sensing information meets the predetermined condition, and step S168 of applying a high-voltage pulse at a second voltage to the electrode.

[0226] Referring to FIG. 20, the control method of the plasma generation device may include step S130 of acquiring first sensing information at a first time point, step S166 of applying a high-voltage pulse at a first voltage to the electrode via a second power source when the acquired first sensing information does not meet a predetermined condition, step (not shown) of acquiring second sensing information at a second time point after the first time point, and step S168 of applying a high-voltage pulse at a second voltage greater than the first voltage to the electrode via the second power source when the acquired second sensing information does not meet the predetermined condition.

[0227] Figure 21 is a diagram illustrating the output current and high-voltage pulse output according to the control method of the plasma generation apparatus 2000 according to one embodiment. Below, the RF current and high-voltage pulse output from the plasma generation apparatus 2000 according to one embodiment will be described with reference to the plasma generation apparatus 2000 illustrated in Figure 15.

[0228] Figure 21(a) shows the output current i flowing through the antenna module (or load) according to a control method for a plasma generation apparatus 2000 according to one embodiment. RF This figure shows the result. A control method for the plasma generation apparatus 2000 according to one embodiment may include applying an AC voltage to the antenna module 2030 from a first time point t1 via a first power supply P1. Output current i RF The operation of the plasma generator 2000, which generates or applies an AC voltage to the antenna module 2030, can be similarly described in relation to Figure 18.

[0229] Referring to Figure 21(b), a control method for the plasma generator 2000 according to one embodiment may include applying a high-voltage pulse to the electrode 2050 via a second power supply P2. Regarding the high-voltage pulse application operation, unless otherwise specified, the same procedures described in relation to Figure 18 can be applied.

[0230] According to one embodiment, the control method for the plasma generator 2000 may include applying a high-voltage pulse to the electrode 2050 at a constant interval (in the following example, the first time interval PT1) from the second time point t2 until plasma generation is detected. At this time, the intensity of the applied unit high-voltage pulse can be changed.

[0231] The control method for the plasma generator 2000 may include obtaining information indicating the presence or absence of plasma generation via a separate power sensor, current sensor, or voltage sensor, and controlling the second power supply P2 based on the obtained information. The control method for the plasma generator 2000 may also include deciding whether or not to apply a high-voltage pulse based on information obtained via sensor 2070.

[0232] Referring to Figure 21(b), the control method for the plasma generator 2000 may include applying a first unit pulse UP1 to the electrode 2050 at a second time point t2 after a predetermined time PT from a first time point t1 (or at least from the second time point t2 onward). The control method for the plasma generator 2000 may also include applying a first unit pulse UP1 to the electrode 2050 at least from the second time point t2 onward if no plasma is generated in the chamber 2010 at the second time point t2 in response to applying an AC voltage to the antenna module 2030 via a first power supply P1 from the first time point t1.

[0233] The control method for the plasma generator 2000 may include applying a second unit pulse UP2 to the electrode 2050 from the second time point t2 to the first time interval PT1 or later. The second unit pulse UP2 may have a value greater than the first unit pulse UP1. If plasma is not generated within a fixed time interval PT1 from the second time point t2, the control method for the plasma generator 2000 may include applying a second unit pulse UP2 to the electrode 2050 at a voltage greater than the first unit pulse UP1 from the second time point t2 to the electrode 2050 at a predetermined time interval PT1 or later.

[0234] The control method for the plasma generator 2000 may include applying a second unit pulse UP2, and then applying a third unit pulse UP3 to the electrode 2050 at a voltage greater than that of the second unit pulse UP2 at a first time interval PT1 or later, starting from the time the second unit pulse UP2 is applied.

[0235] The control method for the plasma generator 2000 may include interrupting the application of a high-voltage pulse to the electrode 2050 based on a value obtained via the sensor 2070. The control method for the plasma generator 2000 may also include interrupting the application of a high-voltage pulse to the electrode 2050 if a value obtained via the sensor 2070 satisfies a predetermined condition. Referring to Figure 21(b), the control method for the plasma generator 2000 may include interrupting the application of a high-voltage pulse to the electrode 2050 in response to the generation of plasma in the chamber 2010 (for example, at a third time point t3) after the application of a third unit pulse UP3.

[0236] 2.3.3 Example 3 According to one embodiment, a plasma generation device can be provided that applies an RF voltage to an antenna module, acquires sensing information regarding the state of the plasma, and adjusts the period of the high-voltage pulse applied to the electrode if the sensing information does not meet predetermined conditions. According to one embodiment, the control method of the plasma generation device may include reducing the operating period of a second power supply that generates high-voltage pulses if plasma generation is not detected.

[0237] Figure 22 is a diagram illustrating a control method for a plasma generation apparatus according to one embodiment.

[0238] Referring to Figure 22, the control method for a plasma generation apparatus according to one embodiment may further include, after step S130 of acquiring sensing information relating to the state of the plasma described above, step S171 of determining whether the sensing information satisfies predetermined conditions, step S172 of applying a high-voltage pulse to the electrode if the sensing information does not satisfy the predetermined conditions, step S173 of determining whether the sensing information satisfies predetermined conditions after applying the high-voltage pulse to the electrode, and step S174 of reducing the period of the high-voltage pulse if the sensing information does not satisfy the predetermined conditions.

[0239] A control method for a plasma generator may include periodically acquiring sensing information, determining whether the acquired sensing information satisfies predetermined conditions, and, if the sensing information does not satisfy the predetermined conditions, reducing the period of the high-voltage pulse applied to the electrode (the time interval between adjacent high-voltage pulses in a time series).

[0240] Referring to Figure 22, the control method for the plasma generation apparatus may include repeatedly performing the following steps: step S172, which applies a high-voltage pulse to the electrode if the sensing information does not meet predetermined conditions; step S173, which, after applying the high-voltage pulse to the electrode, acquires sensing information again and determines whether the acquired sensing information meets predetermined conditions; and step S174, which, if the acquired sensing information does not meet predetermined conditions, increases the voltage of the high-voltage pulse.

[0241] Figure 23 is a diagram illustrating the output of RF current and high-voltage pulses according to a control method for a plasma generation apparatus according to one embodiment.

[0242] Referring to Figure 23, the control method for a plasma generation apparatus according to one embodiment may further include, after step S130 of acquiring sensing information relating to the state of the plasma described above, step S175 of determining whether the sensing information satisfies predetermined conditions, step S176 of applying high-voltage pulses to the electrodes at first time intervals if the sensing information does not satisfy predetermined conditions, step S177 of determining whether the sensing information satisfies predetermined conditions after applying high-voltage pulses to the electrodes at first time intervals, and step S178 of applying high-voltage pulses to the electrodes at second time intervals if the sensing information does not satisfy predetermined conditions.

[0243] Referring to FIG. 23, a control method of a plasma generation device includes: a step S130 of acquiring first sensing information at a first time point; a step S175 of determining whether the acquired first sensing information satisfies a predetermined condition; a step S176 of applying a high-voltage pulse to an electrode at a first time interval via a second power supply when the acquired first sensing information does not satisfy the predetermined condition; a step (not shown) of acquiring second sensing information at a second time point after the first time point; and a step S178 of applying a high-voltage pulse to the electrode at a second time interval smaller than the first time interval via the second power supply when the acquired second sensing information does not satisfy the predetermined condition.

[0244] FIG. 24 is a diagram for explaining the output current and the output of a high-voltage pulse according to a control method of a plasma generation device 2000 according to an embodiment. Unless otherwise specified, in the control method of the plasma generation device 2000 described in relation to FIG. 24, the contents of FIGS. 18 and 21 described above can be applied in the same manner.

[0245] FIG. 24(a) shows that when an alternating voltage is applied to an antenna module 2030 from a first time point t1 via a first power supply P1 according to a control method of a plasma generation device 2000 according to an embodiment, an output current i flowing through the antenna module (or load). RF Regarding FIG. 24(a), the content described in relation to FIG. 18(a) can be applied in the same manner.

[0246] A control method of a plasma generation device 2000 according to an embodiment can include inducing plasma generation by generating a high-voltage pulse when plasma is not generated within a predetermined time by an alternating voltage, and minimizing device damage and by-product generation by gradually decreasing the application period of the high-voltage pulse. Regarding the high-voltage pulse application operation, unless otherwise specified, the content described in relation to FIG. 18 can be applied in the same manner.

[0247] Referring to Figure 24(b), a control method for the plasma generation apparatus 2000 according to one embodiment may include applying a first unit pulse UP1 to the electrode 2050 at a second time point t2 after a predetermined time PT from the first time point, applying a second high-voltage pulse UP2 to the electrode at a third time point t3 after the first time interval PT1 from the second time point t2, and applying a third high-voltage pulse UP3 to the electrode at a fourth time point after the second time interval PT2 from the third time point t3. In this case, the second time interval PT2 may be shorter than the first time interval PT1.

[0248] A control method for a plasma generator 2000 according to one embodiment may include applying a first unit pulse UP1 to the electrode 2050 at a second time point t2, acquiring sensing information indicating the plasma state during a first time interval PT1 after the second time point t2, determining whether predetermined conditions are met based on the sensing information, and if the predetermined conditions are not met (i.e., plasma is not generated), applying a second unit pulse UP2 to the electrode 2050 at a third time point t3. The control method for the plasma generator 2000 may further include acquiring sensing information indicating the plasma state during a second time interval PT2 after the third time point t3, determining whether predetermined conditions are met based on the sensing information, and if the predetermined conditions are not met, applying a third unit pulse UP3 to the electrode 2050 at a fourth time point t4.

[0249] With regard to the control method of the plasma generator 2000 described in relation to Figure 24, the content regarding the interruption of pulse application can be similarly applied. Referring to Figure 24(b), the control method of the plasma generator 2000 may include, after applying the third unit pulse UP3, (for example, at the third time point t5) acquiring sensing information related to plasma generation and interrupting the application of high-voltage pulses to the electrode 2050.

[0250] On the other hand, Figure 24(b) describes an embodiment in which the time interval between individual unit pulses is changed, but the invention described herein is not limited to this. For example, a control method for a plasma generator 2000 according to one embodiment may include gradually decreasing the period of the high-voltage pulse applied to the electrode 2050 until plasma generation is detected. In other words, the control method for the plasma generator 2000 may further include applying one or more unit high-voltage pulses to the electrode 2050 in a first period, acquiring sensing information in response to the application of one or more unit high-voltage pulses in the first period, and if no plasma is generated, applying one or more high-voltage pulses to the electrode 2050 in a second period shorter than the first period.

[0251] 2.4 RF Signal Modulation According to one embodiment, the plasma generator can control the RF power supply based on sensing information and predetermined conditions. The plasma generator can control the power output via the RF power supply depending on the state of the plasma (for example, depending on whether or not plasma ignition (or generation) is occurring).

[0252] As a specific example, a plasma generator can induce an initial discharge by applying an RF voltage to an antenna module, but if the initial discharge (or ignition) does not occur within a predetermined time, it can gradually increase the magnitude of the current supplied by the RF power supply. For example, if the plasma generator does not induce an initial discharge (or ignition) within a predetermined time after starting to apply the RF voltage to the antenna module, it can gradually change the intensity of the RF voltage applied to the antenna module.

[0253] The plasma generator can prevent excessive voltage from being applied to the antenna module by not increasing the RF voltage any further once the initial discharge (or ignition) occurs.

[0254] As another specific example, a plasma generator can apply an RF voltage to an antenna module for a certain period of time, then determine whether predetermined conditions for plasma generation are met, and if the conditions are not met (i.e., plasma is not generated), it can change the output state of the RF voltage. For example, a plasma generator or its controller can apply an RF voltage to the antenna module via a first power supply from a first time point to output a first power, and if the sensing information at a second time point after the first time point does not meet the predetermined conditions, it can apply an RF voltage to the antenna module via the first power supply to output a second power greater than the first power. The plasma generator applying the RF voltage to the antenna module to output a second power greater than the first power may include increasing the magnitude of the RF voltage from the second time point onward.

[0255] In one embodiment, the plasma generator can change the frequency of the output RF current (or RF voltage) if an initial discharge (or ignition) does not occur within a predetermined time after the RF voltage is applied to the antenna module. The plasma generator can increase the frequency of the RF current (or RF voltage). The plasma generator can change the frequency of the RF current (or RF voltage) based on the phase difference between the RF voltage and RF current applied to the antenna module. The plasma generator can change the frequency of the RF current (or RF voltage) so that the phase difference between the RF voltage and RF current applied to the antenna module decreases.

[0256] As a specific example, a plasma generator can apply an RF voltage to an antenna module for a certain period of time, then determine whether predetermined conditions for plasma generation have been met, and if the conditions are not met, it can change the output frequency of the RF power. For example, a plasma generator or its controller can provide RF power to the antenna module via a first power supply from a first time point in time, using a first frequency as the drive frequency. If the sensing information at a second time point after the first time point does not meet the predetermined conditions, the drive frequency can be changed to a second frequency. The second frequency may be higher than the first frequency. If an initial discharge (or ignition) occurs, the plasma generator can maintain the drive frequency of the RF power supply.

[0257] 2.4.1 Example 4 According to one embodiment, a plasma generation device can be provided that applies an RF voltage to an antenna module to acquire sensing information regarding the state of the plasma, and applies a high-voltage pulse to the electrode if the sensing information does not meet predetermined conditions. According to one embodiment, the control method of the plasma generation device may include applying a high-voltage pulse to the electrode when plasma generation is detected.

[0258] Figure 25 is a diagram illustrating a control method for a plasma generation apparatus according to one embodiment.

[0259] Referring to Figure 25, the control method for a plasma generation apparatus according to one embodiment may further include, after step S130 of acquiring sensing information relating to the state of the plasma described above, step S181 of determining whether the sensing information satisfies predetermined conditions, and step S182 of increasing the magnitude of the RF voltage if the sensing information does not satisfy the predetermined conditions.

[0260] A control method for a plasma generator may include periodically acquiring sensing information, determining whether the acquired sensing information satisfies predetermined conditions, and increasing the magnitude (maximum value or RMS value) of the voltage output by the RF power supply if the sensing information does not satisfy the predetermined conditions.

[0261] Referring to Figure 25, the control method for the plasma generation device may include repeatedly performing the following steps: applying an AC voltage to the antenna module to acquire sensing information if the sensing information does not meet predetermined conditions; determining whether the acquired sensing information meets predetermined conditions (S181); and increasing the voltage of the RF power supply (S182) if the acquired sensing information does not meet predetermined conditions.

[0262] Figure 26 is a diagram illustrating the output of RF current and high-voltage pulses according to a control method for a plasma generation apparatus according to one embodiment.

[0263] Referring to Figure 26, the control method for a plasma generation apparatus according to one embodiment may further include, after step S130 of acquiring sensing information relating to the state of the plasma described above, step S183 of determining whether the sensing information satisfies predetermined conditions, step S184 of applying an RF voltage of a first magnitude to the load if the sensing information does not satisfy the predetermined conditions, step S185 of determining whether the sensing information satisfies predetermined conditions after applying an RF voltage of a first magnitude to the load, and step S186 of applying an RF voltage of a second magnitude to the load if the sensing information does not satisfy the predetermined conditions.

[0264] Referring to FIG. 26, a control method of a plasma generation device according to an embodiment includes step S130 of acquiring first sensing information at a first time point, step S183 of determining whether the acquired first sensing information satisfies a predetermined condition, step S184 of applying an alternating voltage having a first magnitude to an antenna module via a first power supply when the acquired first sensing information does not satisfy the predetermined condition, step (not shown) of acquiring second sensing information at a second time point after the first time point, step S185 of determining whether the acquired second sensing information satisfies a predetermined condition, and step S186 of applying an alternating voltage having a second magnitude greater than the first magnitude to the antenna module via the first power supply when the second sensing information does not satisfy the predetermined condition.

[0265] FIG. 27 is a diagram for explaining the output of an output current and a high-voltage pulse by a control method of a plasma generation device 2000 according to an embodiment. Hereinafter, a control method of the plasma generation device 2000 will be described with reference to the plasma generation device 2000 illustrated in FIG. 15.

[0266] Regarding the current i RF of the antenna module 2030 according to FIGS. 27(a) and (b) ig and the high-voltage pulse V, unless otherwise specifically described below, the content described in connection with FIGS. 18(a) and (b) can be similarly applied.

[0267] Referring to FIG. 27(a), a control method of a plasma generation device 2000 according to an embodiment can include sequentially increasing the magnitude of the alternating voltage applied to the antenna module 2030 via the first power supply P1. As the intensity of the voltage applied to the antenna module 2030 increases, the intensity of the measured current i RF of the antenna module can be increased. Hereinafter, a method of controlling the plasma generation device 2000 by changing the magnitude of the alternating voltage will be described with reference to FIG. 27(a).

[0268] A control method for the plasma generation apparatus 2000 according to one embodiment may include applying an AC voltage with a first voltage as the maximum voltage to the antenna module 2030 from a first time point t1, and applying an AC voltage with a second voltage as the maximum voltage to the antenna module 2030 from a second time point t2.

[0269] The control method for the plasma generator 2000 may include changing the magnitude of the AC voltage applied to the antenna module 2030 via the first power supply P1 based on whether or not plasma is being generated.

[0270] For example, a control method for a plasma generation apparatus 2000 according to one embodiment may include applying an AC voltage with a maximum voltage of a first voltage to the antenna module 2030 from a first time point t1, and acquiring sensing information indicating the plasma state between the first time point t1 and the second time point t2 in response to applying an AC voltage with a maximum voltage of a first voltage to the antenna module 2030. If the sensing information acquired between the first time point t1 and the second time point t2 indicates that no plasma was generated, the control method for the plasma generation apparatus 2000 may further include applying an AC voltage with a maximum voltage of a second voltage to the antenna module 2030 from the second time point. The second voltage may be greater than the first voltage. Therefore, the current i flowing through the antenna module 2030 from the second time point onward may be... RF The maximum value (or RMS value) of is the current i flowing through the antenna module 2030 before the second time point. RF It can have a value greater than the maximum value (or effective value) of .

[0271] The second time point t2 may be after the third time interval PT3 from the first time point t1. The third time interval PT3 may be an integer multiple of the period (or half-period) of the AC voltage applied by the first power supply P1.

[0272] Referring to Figure 27(a), at the third and fourth time points after the second time point, the AC voltage (and the corresponding current i of the antenna module 2030) is maintained in the same manner as in the embodiment described above. RF) can be changed. The third time point t3 is after the third time interval PT3 from the second time point t2, and the fourth time point t4 may be after the third time interval PT3 from the third time point t3.

[0273] Referring to Figure 27(a), the control method for the plasma generator 2000 may further include maintaining the voltage intensity applied to the antenna module 2030 after a predetermined time PT has elapsed, but applying a high-voltage pulse to the electrode 2050.

[0274] The control method for the plasma generator 2000 includes gradually increasing the voltage applied to the antenna module 2030 via the first power supply P1 during a predetermined time PT, but if plasma is not generated during the predetermined time PT, it may further include applying a high-voltage pulse to the electrode 2050 via the second power supply P2.

[0275] For example, referring to Figure 27(b), the control method for the plasma generator 2000 may include applying a high-voltage pulse to the electrode 2050 using the second power supply P2 at the fifth time point t5, which is after the fourth time point t4. The fifth time point t5 may be after the third time interval PT3 from the fourth time point t4. The control method for the plasma generator 2000 may further include controlling the second power supply P2 at the fifth time point t5, as described in Figures 18, 21, and 24.

[0276] 2.5 Combined Control The above description has described embodiments in which the application of high-voltage pulses is adjusted based on changes in the plasma state, or the intensity of the voltage applied by an RF AC power supply is adjusted. However, the invention described herein is not limited to these embodiments.

[0277] For example, in the embodiment described in relation to Figure 27, the plasma generation device can adjust whether or not to apply high-voltage pulses via the second power supply P2, the application interval, or the intensity after a predetermined time PT, as in the embodiment described in Figure 18, Figure 21, or Figure 24.

[0278] As a specific example, a control method for a plasma generation apparatus according to one embodiment may include adjusting the intensity and interval of high-voltage pulses to assist plasma discharge. For example, a control method for a plasma generation apparatus may include the steps of: applying an AC voltage to an antenna module from a first time point; applying a first high-voltage pulse having a first voltage to the electrode at the second time point if plasma generation is not detected between the first and second time points; applying a second high-voltage pulse having a second voltage greater than the first voltage to the electrode at the third time point if plasma generation is not detected between the second and third time points; and applying a second high-voltage pulse having a third voltage greater than the third voltage to the electrode at the fourth time point if plasma generation is not detected between the third and fourth time points. In this case, the time interval between the second and third time points may be greater than the time interval between the third and fourth time points.

[0279] As another specific example, a control method for a plasma generator according to one embodiment may include adjusting the intensity (or interval) of high-voltage pulses and the intensity of the RF power supply to assist the plasma discharge. For example, a control method for a plasma generator may include gradually increasing the magnitude of the voltage output by the AC power supply between a first time point and a second time point, and then gradually increasing the magnitude of the voltage of the high-voltage pulses generated by the pulse generator from the second time point onward.

[0280] 3. Detection of plasma generation In the above embodiments, several examples have been described of plasma generation apparatuses and control methods thereof that efficiently assist plasma generation while suppressing the generation of by-products by controlling high-voltage pulses or AC voltages based on the state of the plasma.

[0281] However, according to the above embodiment, in order to effectively suppress the generation of by-products, sensing of changes in the plasma state must precede power supply (high-voltage pulse or AC voltage) control.

[0282] The following describes, in some examples, means or methods for sensing changes in the state of plasma.

[0283] 3.1 Detection of power changes According to one embodiment, a plasma generation device can be provided that includes a sensor that acquires sensing information related to the power supplied to a load based on the fact that the power information transmitted to the load changes depending on whether or not plasma is generated, senses whether or not plasma is generated based on the change in the power supplied to the load by the power supply, and controls the operation of the power supply accordingly.

[0284] The following describes several embodiments of a plasma generation apparatus or a control method for controlling a power supply based on power changes.

[0285] Figure 28 is a diagram illustrating a plasma generation apparatus 2100 including a sensor according to one embodiment.

[0286] Referring to Figure 28, a plasma generator 2100 according to one embodiment may include a chamber 2110, an antenna module 2130, an electrode 2150, a sensor 2170, and a controller 2190. The configurations and operations of the plasma generator 2100 can be applied by analogy to those described in relation to the plasma generator 2000 in Figure 15.

[0287] Referring to Figure 28, the sensor 2170 can acquire sensing information from the first power supply P1 and transmit the acquired information to the controller 2190. The controller 2190 can control the first power supply P1 and / or the second power supply P2 based on the information acquired via the sensor 2170.

[0288] Figure 29 is a simplified circuit diagram illustrating a plasma generation apparatus including a sensor according to one embodiment.

[0289] Referring to Figure 29, the plasma generation apparatus according to one embodiment is powered by a DC power supply V DDThe system may include a first power supply P1 in which the sensor 2171 is located, a controller 2191, a second power supply P2 including a high-voltage pulse generator, an electrode 2151, and a variable load.

[0290] The inverter of the first power supply P1 receives the switching signal S A S B S C S D It can operate according to the switching signal S. A S B S C S D DC power supply V DD Based on this, an AC voltage V is applied to the load. RF We can provide this.

[0291] The high-voltage pulse generator of the second power supply P2 outputs the pulse control signal S P It operates accordingly, and a high-voltage pulse can be applied to electrode 2151.

[0292] A variable load may be a load whose value changes depending on the reactance and inductance caused by the plasma generated in the antenna module and chamber.

[0293] Sensor 2171 is powered by a DC power supply V DD It is located between the inverter and the DC power supply V and can acquire sensing information regarding the power transmitted to the load. Sensor 2171 is located between the inverter and the DC power supply V DD The voltage and / or current output by can be obtained. Sensor 2171 can obtain the voltage and / or current and transmit it to controller 2191. Sensor 2171 can obtain the energy P determined by the voltage and / or current. ref The data can be obtained and transmitted to the controller 2191. Sensor 2171 may include a voltmeter and / or ammeter.

[0294] Controller 2191 receives the switching signal S A S B SC S D It can generate a switching signal S. The controller 2191 generates a switching signal S. A S B S C S D This can generate a voltage that can then be applied to the load (or antenna module) via the first power supply P1.

[0295] Controller 2191 controls the pulse control signal S P It can generate a pulse control signal S. The controller 2191 generates a pulse control signal S. P This allows a high-voltage pulse to be applied to electrode 2151 via the second power supply P2.

[0296] The controller 2191 controls the high-voltage generator of the second power supply P2 based on sensing information acquired via the sensor 2171, and sends a high-voltage pulse V to the electrode 2151. ig A pulse control signal S can be applied. The controller 2191 applies a pulse control signal S based on the sensing information acquired via the sensor 2171. P The controller 2191 can generate a high-voltage pulse V applied to the electrode 2151 based on sensing information acquired via the sensor 2171. ig The magnitude and / or period can be adjusted. The controller 2191 can adjust the magnitude of the AC voltage applied to the antenna module based on sensing information acquired via the sensor 2171.

[0297] For example, the controller 2191 acquires sensing information, and if the sensing information does not meet predetermined conditions, it issues a pulse control signal S P This allows for the generation of a high-voltage pulse to be applied to electrode 2151.

[0298] Furthermore, for example, the controller 2191 acquires sensing information, and if the sensing information satisfies predetermined conditions, it does not need to apply a high-voltage pulse to the electrode 2151.

[0299] Furthermore, for example, the controller 2191 periodically acquires sensing information, and if the sensing information did not meet a predetermined condition but will meet the predetermined condition in the future, it will issue a pulse control signal S from the time the sensing information that meets the condition is acquired. P The generation of this substance can be interrupted, thereby interrupting the application of a high-voltage pulse to electrode 2151.

[0300] Furthermore, for example, the controller 2191 periodically acquires sensing information, and if the sensing information previously met a predetermined condition but no longer meets that condition, it will issue a pulse control signal S from the point in time when the sensing information that no longer meets the condition is acquired. P This allows for the generation of a high-voltage pulse to be applied to electrode 2151.

[0301] The controller 2191's determination of whether the sensing information satisfies predetermined conditions may include determining whether the sensing information satisfies conditions related to plasma generation. The controller 2191's determination of whether the predetermined conditions are met may include comparing the value obtained via the sensor 2171 with a reference value. In this case, the reference value may be a value used to determine the plasma generation state. For example, the reference value may be a threshold or threshold interval in which plasma is considered to have been generated if the sensed value is greater than or equal to the reference value, and plasma is considered not to have been generated if the sensed value is less than or equal to the reference value.

[0302] As a specific example, the controller 2191 can obtain power information Pref from the sensor 2171 and, based on the power information Pref, determine whether the power supplied to the load by the first power supply P1 is above a reference value. The controller 2191 can determine whether plasma discharge is possible based on whether the power supplied to the load by the first power supply P1 is above a reference value. The controller 2191 may obtain a power value indicating that plasma has been generated (or a power value above the reference value) and perform an operation if a predetermined condition is met, or it may obtain a power value indicating that plasma has not been generated (or a power value below the reference value) and perform an operation if a predetermined condition is not met.

[0303] Figure 30 shows a power signal and a control signal for a high-voltage pulse that is modified based on the power signal in a plasma generation apparatus including a sensor according to one embodiment.

[0304] Figures 30(a) and (b) show the plasma generation apparatus illustrated in Figure 28 or Figure 29, where the current i flowing through the load is RF , pulse control signal S P and pulse control signal S P A high-voltage pulse V is applied to the voltage by ig This figure shows the change over time.

[0305] Referring to Figures 30(a) and (b), the plasma generator applies an AC voltage to the antenna module, and at the first time point t on A high-voltage pulse can be applied to the electrode. The plasma generator acquires a power signal and discharges the plasma based on the power signal (t ig When this occurs, the application of the high-voltage pulse is interrupted. off It is possible.

[0306] Referring to Figure 30(a), according to the plasma generation apparatus of one embodiment, the time t when plasma discharge occurs ig High voltage pulse application was interrupted from 98ms onwards. offYes, it is possible. Referring to Figure 30(b), according to the plasma generation apparatus of one embodiment, at the time t when plasma discharge occurs, ig High voltage pulse application is interrupted from 960ms onwards. off can.

[0307] 3.2 Phase Change Detection On the other hand, during the period from the moment plasma is generated until the application of high-voltage pulses (or other plasma discharge assist operations) associated with plasma generation is interrupted, high-voltage pulses are applied to the electrodes despite the plasma being generated. This not only wastes power but can also cause the plasma to collide with the chamber wall, potentially leading to equipment damage or the generation of impurities.

[0308] Therefore, minimizing time delays can minimize equipment damage and impurity generation. However, when using power as sensing information generated by plasma, the delay time from the moment a power change occurs until power control is performed due to the time required for noise reduction of voltage or current signals may be relatively long. The delay time can be further reduced by controlling the operation of the power supply based on the phase difference between voltage and current measured by the antenna module, rather than on power changes.

[0309] In the following, several embodiments of a plasma generation apparatus or control method that controls the operation of a first or second power supply based on the phase difference of the voltage and current applied to an antenna module (or load) will be described as a method for reducing time delay.

[0310] Figure 31 is a diagram illustrating the plasma generation apparatus 2200 including sensors according to each embodiment.

[0311] Referring to Figure 31, a plasma generator 2200 according to one embodiment may include a chamber 2210, an antenna module 2230, an electrode 2250, a sensor 2270, and a controller 2290. The configurations and operations of the plasma generator 2200 can be applied by analogy to the plasma generator 2000 shown in Figure 15.

[0312] Referring to Figure 31, the sensor 2270 can acquire sensing information from the antenna module 2230 (or load) and transmit the acquired information to the controller 2290. The controller 2290 can control the first power supply P1 and / or the second power supply P2 based on the information acquired via the sensor 2270. The sensor 2270 can acquire sensing information including at least one of the current flowing through the antenna module 2230 (or load), the phase of the current, the voltage applied to the antenna module 2230 (or load), and the phase of the voltage, and transmit this information to the controller 2290.

[0313] Figure 32 is a simplified circuit diagram illustrating a plasma generation apparatus including a sensor according to one embodiment.

[0314] Referring to Figure 32, the plasma generation apparatus according to one embodiment is powered by a DC power supply V DD The system may include a first power supply P1 including an inverter, a controller 2291, a second power supply P2 including a high-voltage pulse generator, an electrode 2251, a sensor 2271 for acquiring the current flowing through the load, and a variable load. In relation to the plasma generation apparatus illustrated in Figure 32, a DC power supply V DD The same principles described in relation to Figure 29 can be applied to the first power supply P1, controller 2291, second power supply P2, electrode 2251, and variable load.

[0315] Referring to Figure 32, in one embodiment, the plasma generation apparatus has a current i flowing through the antenna module (or load). RF or current i RFA sensor 2271 may be included to acquire the phase. The sensor 2271 may include a current transformer, a filter, and a comparator.

[0316] Sensor 2271 may be located near the load and connected to the antenna module, and the current i flowing through the antenna module (or load) is detected. RF or current i RF The phase may be obtained. Sensor 2271 detects current i RF or current i RF The phase can be obtained and transmitted to the controller 2291.

[0317] The controller 2291 can control the first power supply P1 or the second power supply P2 based on sensing information acquired via the sensor 2271. The controller 2291 can control the current i via the sensor 2271. RF or current i RF Obtain the phase of the current i RF or current i RF The system can determine whether the phase of the current satisfies predetermined conditions and control either the first power supply P1 or the second power supply P2.

[0318] On the other hand, the current i flowing through the load RF and the voltage V applied to the load RF The presence or absence of plasma generation may be determined from the phase difference. For example, according to one embodiment, when no plasma discharge occurs in the chamber, an AC voltage V is supplied to the antenna module. RF By applying this, the current i flows through the antenna module. RF This is the voltage V applied to the antenna module. RF It can have a phase that is almost the same as that. When a plasma discharge occurs in the chamber, an AC voltage V is applied to the antenna module. RF By applying this, the current i flows through the antenna module. RF This is the voltage V applied to the antenna module. RF It can have a different phase.

[0319] The controller 2291 can control the first power supply P1 or the second power supply P2 based on the phase difference between the current i flowing through the load RF and the voltage V applied to the load RF .

[0320] The controller 2291 can obtain the phase of the voltage V A 、S B 、S C 、S D applied to the load from the switching signals S RF or the voltage V RF . The controller 2291 can obtain the phase of the current i RF or the current i RF through the sensor 2271, and control the first power supply P1 or the second power supply P2 based on the phase difference between the voltage V RF applied to the load and the current i RF flowing through the load

[0321] The controller 2291's determination of whether the sensing information meets a predetermined condition can include determining whether the current i RF information meets the conditions related to the generation of plasma. The controller 2291's determination of whether it meets a predetermined condition can include obtaining the phase of the current i RF flowing through the load via the sensor 2271 and comparing the phase of the current i RF flowing through the load with the phase of the voltage V RF applied to the load. The controller 2291's determination of whether the sensing information meets a predetermined condition can include determining whether the phase difference between the phase of the current i RF flowing through the load and the phase of the voltage V RF applied to the load is greater than or equal to a reference value

[0322] The controller 2291 controls the first power supply P1 and / or the second power supply P2 according to the presence or absence of plasma discharge, so the phase of the current i RF flowing through the load and the voltage V RFDetermine whether the phase difference of the phase is greater than or equal to a reference value. When the phase difference is greater than or equal to the reference value (that is, when plasma discharge occurs), do not perform the discharge assist operation. When the phase difference is less than the reference value (that is, when plasma discharge does not occur), the discharge assist operation can be performed.

[0323] The controller 2291 determines the current i flowing through the load RF and the phase difference between the phase of the current i and the voltage V applied to the load RF is greater than or equal to a reference value. If the phase difference is greater than the reference value, a high voltage pulse may not be applied to the electrode 2251 via the second power source P2.

[0324] The controller 2291 determines whether the sensing information satisfies a predetermined condition, which is to determine whether the phase difference between the phase of the current i flowing through the load RF and the phase of the voltage V applied to the load RF is greater than or equal to a reference value. If the phase difference is less than the reference value, a high voltage pulse can be applied to the electrode 2251 via the second power source P2.

[0325] FIG. 33 is a simplified circuit diagram for explaining a plasma generation device including a sensor according to an embodiment. Regarding the plasma generation device illustrated in FIG. 33, the content described in connection with FIGS. 29 and 32 can be similarly applied.

[0326] Referring to FIG. 33, a plasma generation device according to an embodiment can include a sensor 2273 that acquires the phase of the current i flowing through an antenna module (or load) RF or the current i RF The sensor 2273 can include a sensing resistor R connected in series with the antenna module (or load), a filter, and a comparator. The sensor 2273 measures the voltage of the sensing resistor R SEN to acquire the phase of the current i flowing through the antenna module (or load) SEN or the current i RF or the current i RF can be obtained.

[0327] On the other hand, the above embodiment was described based on the case where the controller obtains the phase of the voltage applied to the antenna module from the switching signal, but this is not an essential configuration. The plasma generation apparatus described herein may further include a sensor that obtains the phase of the voltage applied to the antenna module. Below, several embodiments of sensors that obtain the phase of the voltage applied to the antenna module will be described.

[0328] Figure 34 is a simplified circuit diagram illustrating several embodiments of a plasma generation apparatus including a sensor. Figures 34(a), (b), and (c) show the voltage V applied to the antenna module, respectively. RF This is a diagram illustrating a plasma generator including sensors 2275, 2277, and 2279 that acquire the phase.

[0329] Referring to Figure 34(a), the sensor 2275 according to one embodiment may include a resistor distribution circuit connected to both ends of the antenna module. The sensor 2275 receives the voltage V applied to the antenna module via the resistor distribution circuit. RF The phase can be obtained. If necessary, the sensor 2275 may further include a filter and / or comparator.

[0330] Referring to Figure 34(b), the sensor 2277 according to one embodiment may include a capacitor distribution circuit connected to both ends of the antenna module. The sensor 2277 receives the voltage V applied to the antenna module via the capacitor distribution circuit. RF The phase can be obtained. If necessary, the sensor 2277 may further include a filter and / or comparator.

[0331] Referring to Figure 34(c), the sensor 2279 according to one embodiment may include transformers connected to both ends of the antenna module. The sensor 2279 receives the voltage V applied to the antenna module via the transformer. RFThe phase can be obtained. If necessary, the sensor 2279 may further include a filter and / or comparator.

[0332] On the other hand, although not shown in Figure 34, each plasma generator may include a controller, a second power supply, and electrodes. The controller applies a voltage V to the antenna module via sensors 2275, 2277, and 2279. RF The phase is obtained, and the current i flowing through the antenna module is obtained. RF The phase and the voltage V applied to the antenna module RF The operation of the inverter and / or high-voltage pulse generator can be controlled based on the phase difference.

[0333] Figures 35(a) and (b) show the plasma generation apparatus illustrated in Figure 31, where the current i flowing through the load is RF , pulse control signal S P and a high-voltage pulse V applied to the voltage ig This figure shows the change over time.

[0334] Figure 35 shows a control signal for a high-voltage pulse that is modified based on the phase difference between the voltage applied to the antenna module and the current flowing through the antenna module in a plasma generation apparatus including a sensor according to one embodiment.

[0335] Figures 35(a) and (b) show the plasma generation apparatus illustrated in Figure 28 or Figure 29, where the current i flowing through the load is RF , pulse control signal S P and pulse control signal S P A high-voltage pulse V is applied to the voltage accordingly. ig This figure shows the change over time.

[0336] Referring to Figures 35(a) and (b), the plasma generator applies an AC voltage to the antenna module, and at the first time point t onA high-voltage pulse can be applied to the electrode. The plasma generator acquires the phase of the voltage applied to the antenna module and the current flowing through the antenna module, and generates a plasma discharge (t) based on the signal from the phase difference. ig When this occurs, the application of the high-voltage pulse is interrupted. off For example, a plasma generator can interrupt the application of high-voltage pulses if the phase difference exceeds a reference value. off It is possible.

[0337] Referring to Figure 35(a), according to the plasma generation apparatus of one embodiment, the time t when plasma discharge occurs ig High voltage pulse application is interrupted from 0.8ms onwards. off Yes, it is possible. Referring to Figure 30(b), according to the plasma generation apparatus of one embodiment, at the time t when plasma discharge occurs, ig High voltage pulse application is interrupted from 0.6ms onwards. off can.

[0338] Referring to Figures 35(a) and 30(a) and 30(b), when the application of the high-voltage pulse is interrupted based on the phase difference between the current and voltage of the antenna module (Figure 35), rather than interrupting the application of the high-voltage pulse based on the amount of power consumed (Figure 30), the plasma discharge occurs at point t ig The application of high voltage pulses is interrupted. off It can be confirmed that the time until this occurs is short. In other words, the application of high voltage pulses is interrupted based on the phase difference. off By doing so, at the point when plasma discharge occurs t ig The application of high voltage pulses is interrupted. off This minimizes the time it takes for the process to complete, reducing the risk of damage to the equipment or the generation of unwanted particles.

[0339] As described in the above embodiments, by using multiple antenna modules with different discharge characteristics, selective plasma discharge can be performed according to various discharge environments. By performing plasma discharge using multiple antenna modules, a plasma generation device capable of performing discharge under various environmental conditions can be provided.

[0340] Although the embodiments have been described above with reference to limited embodiments and drawings, those skilled in the art can make various modifications and variations from the above description. For example, the described techniques can be performed in a different order than described, and / or the described systems, structures, devices, circuits, and other components can be combined or assembled in a different manner than described, or replaced or substituted with other components or equivalents, and still achieve suitable results.

[0341] Therefore, other configurations, other embodiments, and those equivalent to the claims described below also fall within the scope of the claims.

Claims

1. A plasma induction device, A chamber that provides a space for plasma induction, An antenna structure arranged to surround the aforementioned chamber, The antenna structure is electrically connected to the above antenna structure, An RF voltage is applied to the antenna structure. A first power supply configured such that when the RF voltage is applied to the antenna structure, an induced electromagnetic field can be formed in the chamber. Electrodes arranged around the chamber, The electrode is electrically connected to the said electrode, A pulse voltage is applied to the electrode. A second power supply configured such that when the pulse voltage is applied to the electrode, electrons can be supplied into the chamber. A sensor configured to acquire sensing information regarding the initial discharge (ignition) state of the plasma, A controller configured to control the first power supply and the second power supply, Includes, The controller further provides for the initial discharge of the plasma in the chamber. In order to apply the RF voltage to the antenna structure without applying the pulse voltage to the electrode, the first power supply is controlled, First sensing information regarding the initial discharge state of the plasma is acquired from the sensor. If an initial plasma discharge does not occur in the chamber, the second power supply is controlled to apply the pulse voltage to the electrode in order to supply electrons into the chamber while maintaining the RF voltage to the antenna structure. or When the initial discharge of plasma occurs in the chamber, the second power supply is controlled so as not to apply the pulse voltage to the electrode. A plasma induction device configured in such a way.

2. The aforementioned controller further, After applying the pulse voltage via the second power supply, second sensing information regarding the state of the plasma is acquired. When the initial discharge of plasma occurs in the chamber, the second power supply is controlled to stop the application of the pulse voltage to the electrode. The apparatus according to claim 1, configured as follows.

3. The apparatus according to claim 2, wherein the controller is further configured to control the first power supply to maintain the RF voltage to the antenna structure when an initial plasma discharge occurs in the chamber.

4. The sensor is configured to detect the power applied to the antenna structure. The aforementioned controller, Power information of the power applied to the antenna structure is obtained from the sensor. If the power information does not meet the predetermined conditions, the second power supply is controlled to maintain the RF voltage to the antenna structure and apply the pulse voltage to the electrode in order to supply electrons into the chamber. The apparatus according to claim 1, configured as follows.

5. The sensor is configured to detect the phase difference between the output voltage of the first power supply and the output current of the first power supply. The aforementioned controller, The phase difference information of the phase difference is obtained from the sensor. If the phase difference information does not satisfy the predetermined conditions, the second power supply is controlled to maintain the RF voltage to the antenna structure and apply the pulse voltage to the electrode in order to supply electrons into the chamber. The apparatus according to claim 1, configured as follows.

6. A plasma induction method using a device, The aforementioned device is (i) A chamber providing a space for plasma induction, (ii) An antenna structure arranged to surround the chamber, (iii) Electrodes arranged around the chamber, (iv) A first power supply configured to apply an RF voltage to the antenna structure, (v) A second power supply configured to apply a pulse voltage to the electrode, Includes, The aforementioned method, The steps include applying the RF voltage to the antenna structure without applying the pulse voltage to the electrodes, so that an induced electromagnetic field is formed within the chamber, The steps include acquiring first sensing information regarding the initial discharge state of the plasma, If no initial plasma discharge occurs in the chamber, the second power supply is controlled to apply the pulse voltage to the electrode in order to supply electrons into the chamber while maintaining the RF voltage to the antenna structure. or When the initial discharge of plasma occurs in the chamber, the second power supply is controlled so as not to apply the pulse voltage to the electrode. Methods that include...

7. The steps include: applying the pulse voltage to the electrode, and then acquiring second sensing information regarding the state of the plasma; When the initial discharge of plasma occurs in the chamber, the second power supply is controlled to stop the application of the pulse voltage to the electrode. The method according to claim 6, further comprising:

8. When an initial plasma discharge occurs in the chamber, the first power supply is controlled to maintain the RF voltage to the antenna structure. The method according to claim 7, further comprising:

9. The step of acquiring the first sensing information is: The steps include acquiring power information of the power applied to the antenna structure, If the power information does not meet predetermined conditions, the second power supply is controlled to maintain the RF voltage to the antenna structure and supply electrons into the chamber by applying the pulse voltage to the electrode. including, The method according to claim 6.

10. The step of acquiring the first sensing information is: A step of acquiring phase difference information of the phase difference between the input voltage of the antenna structure and the input current of the antenna structure, If the phase difference information does not satisfy predetermined conditions, the second power supply is controlled to maintain the RF voltage to the antenna structure and supply electrons into the chamber by applying the pulse voltage to the electrode. including, The method according to claim 6.

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