Composition for semiconductor photoresist and method for forming patterns using the same

Abstract

To provide a semiconductor photoresist composition excellent in sensitivity characteristics and exposure latitude (EL) characteristics, and a pattern forming method using the same.SOLUTION: The present invention relates to: a semiconductor photoresist composition which contains an Sn-containing organometallic compound, a compound represented by chemical formula 1, and a solvent; and a pattern forming method using the semiconductor photoresist composition. An explanation of the chemical formula 1 is as described in the specification.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] This description relates to a semiconductor photoresist composition and a pattern formation method using the same. [Background technology]

[0002] EUV (extreme ultraviolet) lithography is attracting attention as one of the key technologies for manufacturing next-generation semiconductor devices. EUV lithography is a pattern formation technique that uses EUV light with a wavelength of 13.5 nm as the exposure light source. EUV lithography has been demonstrated to be able to form extremely fine patterns (for example, less than 20 nm) in the exposure process of semiconductor device manufacturing.

[0003] The realization of extreme ultraviolet (EUV) lithography requires the development of compatible photoresists that can achieve spatial resolutions of 16 nm or less. Currently, traditional chemically amplified (CA) photoresists are striving to meet the specifications for resolution, photospeed, feature roughness, and line edge roughness (LER) for next-generation devices.

[0004] The intrinsic image blur caused by acid-catalyzed reactions in these polymer-type photoresists limits resolution at small feature sizes, a phenomenon long known in electron beam lithography. Chemically amplified (CA) photoresists, while designed for high sensitivity, can be partially more challenging under EUV exposure because their typical elemental makeup reduces the photoresist's absorbance at a wavelength of 13.5 nm, resulting in reduced sensitivity.

[0005] CA photoresists can suffer from roughness issues at small feature sizes, and experiments have shown that line edge roughness (LER) increases as the photospeed decreases, partly due to the nature of the acid-catalyzed process. Due to the shortcomings and problems of CA photoresists, the semiconductor industry is seeking new types of high-performance photoresists.

[0006] To overcome the shortcomings of the chemically amplified organic photosensitive compositions described above, inorganic photosensitive compositions have been studied. Inorganic photosensitive compositions are mainly used for negative tone patterning, where chemical modification via a non-chemical amplification mechanism is required to prevent removal by developer compositions. Because inorganic compositions contain inorganic elements that have a higher EUV absorption rate compared to hydrocarbons, sensitivity can be ensured even with a non-chemical amplification mechanism, and they are not sensitive to the stochastic effect, resulting in less line edge roughness and fewer defects.

[0007] Inorganic photoresists based on tungsten and peroxopolyacids of tungsten mixed with niobium, titanium, and / or tantalum have been reported for use as radiation-sensitive materials for patterning (US5061599; H. Okamoto, T. Iwayanagi, K. Mochiji, H. Umezaki, T. Kudo, Applied Physics Letters, 49(5), 298-300, 1986).

[0008] These materials have been effective in patterning large features in bilayer configurations as deep UV, X-ray, and electron beam sources. More recently, impressive performance has been demonstrated when using cationic hafnium metal oxide sulfate (HfSOx) materials with peroxo complexing agents to image 15 nm half-pitch (HP) by projection EUV lithography (US2011-0045406; JKStowers, A. Telecky, M. Kocsis, BL Clark, DAKEszler, A. Grenville, CN Anderson, PPNaulleau, Proc. SPIE, 7969, 796915, 2011). This system exhibits the best performance of non-CA photoresists and has a light speed that approaches the requirements for a viable EUV photoresist. However, hafnium metal oxide sulfate materials containing peroxo-complexing agents have several practical drawbacks. Firstly, these materials are coated with a highly corrosive sulfuric acid / hydrogen peroxide mixture, resulting in poor shelf-life stability. Secondly, structural modifications to improve performance are not easy as a composite mixture. Thirdly, they must be developed with extremely high concentrations of TMAH (tetramethylammonium hydroxide) solution, such as 25 wt%.

[0009] In recent years, molecules containing tin have been found to exhibit excellent absorption of extreme ultraviolet light, and active research is being conducted on them. In the case of organotin polymers, one such example, alkyl ligands dissociate due to light absorption or the secondary electrons generated by it, and crosslinking via oxo bonds with surrounding chains enables negative tone patterning that is not removed by organic developers. Such organotin polymers have shown a dramatic improvement in sensitivity while maintaining resolution and line edge roughness, but further improvement of the aforementioned patterning properties is necessary for commercialization. [Overview of the Initiative] [Problems that the invention aims to solve]

[0010] One example provides a semiconductor photoresist composition with excellent sensitivity characteristics and exposure latitude (EL) characteristics.

[0011] Another embodiment provides a pattern formation method using the aforementioned semiconductor photoresist composition.

[0012] One example of a semiconductor photoresist composition comprises a Sn-containing organometallic compound; a compound represented by the following chemical formula 1; and a solvent.

[0013] Other examples of pattern formation methods include the steps of forming an etching target film on a substrate, applying the aforementioned semiconductor photoresist composition on the etching target film to form a photoresist film, patterning the photoresist film to form a photoresist pattern, and etching the etching target film using the photoresist pattern as an etching mask.

[0014] One example of a semiconductor photoresist composition can achieve excellent sensitivity and exposure latitude (EL) characteristics. [Brief explanation of the drawing]

[0015] [Figure 1] This is a cross-sectional view illustrating a pattern formation method using a semiconductor photoresist composition as an example. [Modes for carrying out the invention]

[0016] The embodiments of the present invention will be described in detail below with reference to the attached drawings. However, in order to clarify the gist of this description, explanations of already known functions or configurations will be omitted.

[0017] To ensure clarity in this description, irrelevant details have been omitted, and the same or similar urea components are given the same reference numerals throughout the specification. Furthermore, the dimensions and thicknesses of each component shown in the drawings are provided arbitrarily for illustrative purposes, and this description is not necessarily limited to those depicted.

[0018] In the drawings, the thickness is shown enlarged to clearly represent multiple layers and regions. Also, for ease of explanation, the thickness of some layers and regions is exaggerated in the drawings. When a layer, film, region, plate, or other part is "on top of" or "on" another part, this includes not only when it is "directly on top" of another part, but also when another part is in between.

[0019] From this description, "substituted" means that the hydrogen atom is replaced by deuterium, halogen group, hydroxyl group, thiol group, cyano group, nitro group, -NRR' (where R and R' are each independently hydrogen, a substituted or unsubstituted C1-C30 saturated or unsaturated aliphatic hydrocarbon group, a substituted or unsubstituted C3-C30 saturated or unsaturated alicyclic hydrocarbon group, or a substituted or unsubstituted C6-C30 aromatic hydrocarbon group), -SiRR'R'' (where R, R', and R'' are each independently hydrogen, substituted This means that the hydrogen atoms are substituted with a substituted or unsubstituted C1-C30 saturated or unsaturated aliphatic hydrocarbon group, a substituted or unsubstituted C3-C30 saturated or unsaturated alicyclic hydrocarbon group, or a substituted or unsubstituted C6-C30 aromatic hydrocarbon group, a C1-C30 alkyl group, a C1-C10 haloalkyl group, a C1-C10 alkylsilyl group, a C3-C30 cycloalkyl group, a C6-C30 aryl group, a C1-C20 alkoxy group, a C1-C20 sulfide group, or a combination thereof. "Unsubstituted" means that the hydrogen atoms are not substituted with other substituents and remain as hydrogen atoms.

[0020] In this specification, "alkyl (alkyl) group" means a linear or branched aliphatic hydrocarbon group unless otherwise defined. The alkyl group may be a "saturated alkyl group" that does not have any double or triple bonds.

[0021] The alkyl group may be a C1-C8 alkyl group. For example, the alkyl group may be a C1-C7 alkyl group, a C1-C6 alkyl group, or a C1-C5 alkyl group. For example, the C1-C5 alkyl group may be a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, or a tert-butyl group or a 2,2-dimethylpropyl group.

[0022] In this document, unless otherwise defined, "cycloalkyl group" refers to a monovalent cyclic aliphatic saturated hydrocarbon group.

[0023] The cycloalkyl group may be a C3-C8 cycloalkyl group, for example, a C3-C7 cycloalkyl group or a C3-C6 cycloalkyl group. For example, the cycloalkyl group may be a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, or a cyclohexyl group, and is not limited to these.

[0024] In this specification, "aliphatic unsaturated organic group" means a hydrocarbon group in which the bonds between carbon atoms in the molecule are double bonds, triple bonds, or combinations thereof.

[0025] The aliphatic unsaturated organic group may be a C2-C8 aliphatic unsaturated organic group. For example, the aliphatic unsaturated organic group may be a C2-C7 aliphatic unsaturated organic group, a C2-C6 aliphatic unsaturated organic group, a C2-C5 aliphatic unsaturated organic group, or a C2-C4 aliphatic unsaturated organic group. For example, the C2-C4 aliphatic unsaturated organic group may be a vinyl group, an ethynyl group, an aryl group, a 1-propenyl group, a 1-methyl-1-propenyl group, a 2-propenyl group, a 2-methyl-2-propenyl group, a 1-propanyl group, a 1-methyl-1-propanyl group, a 2-propanyl group, a 2-methyl-2-propanyl group, a 1-butenyl group, a 2-butenyl group, a 3-butenyl group, a 1-butynyl group, a 2-butynyl group, or a 3-butynyl group.

[0026] In this specification, "aryl (aryl) group" means a substituent in which all elements of the cyclic substituent have p-orbitals and these p-orbitals form a conjugation, and includes monocyclic or fusion-ring polycyclic (i.e., rings sharing adjacent pairs of carbon atoms) functional groups.

[0027] In this specification, a "heteroaryl group" means an aryl group containing at least one heteroatom selected from the group consisting of N, O, S, P, and Si. Two or more heteroaryl groups can be directly linked via sigma bonds, or, if the heteroaryl group contains two or more rings, the two or more rings can be fused together. If the heteroaryl group is a fused ring, each ring may contain one to three of the heteroatoms.

[0028] In this specification, "alkenyl group" means an aliphatic unsaturated alkenyl group, whether linear or branched, containing one or more double bonds, unless otherwise defined.

[0029] In this specification, "alkynyl group" means an aliphatic unsaturated alkynyl group, whether linear or branched, containing one or more triple bonds, unless otherwise defined.

[0030] The following describes a semiconductor photoresist composition based on one example.

[0031] A semiconductor photoresist composition according to one embodiment of the present invention may contain a Sn-containing organometallic compound, a compound represented by the following chemical formula 1, and a solvent. [ka] In the above chemical formula 1, L 1 These are single-bonded, substituted, or unsubstituted C1-C10 alkylene groups. R 1 This includes substituted or unsubstituted C2-C20 alkyl groups, substituted or unsubstituted C3-C20 cycloalkyl groups, substituted or unsubstituted C2-C20 alkenyl groups, substituted or unsubstituted C2-C20 alkynyl groups, substituted or unsubstituted C6-C30 aryl groups, substituted or unsubstituted C7-C30 arylalkyl groups, and -La -X 1 -R a (where X 1 is O or S, and L a is a single bond or a substituted or unsubstituted C1-C20 alkylene group, and R a is a substituted or unsubstituted C1-C20 alkyl group or a substituted or unsubstituted C6-C30 aryl group) or -L b -N(R b )(R c (where L b is a single bond or a substituted or unsubstituted C1-C20 alkylene group, and R b and R c are each independently hydrogen or a substituted or unsubstituted C1-C20 alkyl group).

[0032] The composition for a semiconductor photoresist is characterized in that, by containing a branched-carboxylic acid-based compound having a hydroxyl functional group, the sensitivity and LER are improved and it has excellent resolution.

[0033] In particular, when R 1 is an alkyl group, the exposure latitude (EL) characteristics are further improved by including a carbon chain of 2 or more carbons.

[0034] As an example, the R 1 is a substituted or unsubstituted C2-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, a substituted or unsubstituted C7-C30 arylalkyl group or -L a -X 1 -R a (where X 1 is O or S, and L a is a single bond or a substituted or unsubstituted C1-C20 alkylene group, and R a(This may be a substituted or unsubstituted C1-C20 alkyl group or a substituted or unsubstituted C6-C30 aryl group.)

[0035] As a specific example, R 1 This group may be an ethyl group, propyl group, butyl group, isopropyl group, tert-butyl group, 2,2-dimethylpropyl group, cyclopropyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, ethenyl group, propenyl group, butenyl group, ethynyl group, propynyl group, butynyl group, phenyl group, tolyl group, xylene group, benzyl group, ethoxy group, or propoxy group.

[0036] As a specific example, the compound represented by chemical formula 1 may be one of the compounds listed in Group 1 below. [ka] The compound represented by chemical formula 1 may be included in an amount of 0.01 to 10% by weight relative to 100% by weight of the semiconductor photoresist composition.

[0037] For example, the compound represented by chemical formula 1 may be present in an amount of 0.01 to 5% by weight or 0.05 to 5% by weight relative to 100% by weight of the semiconductor photoresist composition.

[0038] The Sn-containing organometallic compound can be present in an amount of 0.5% to 30% by weight relative to 100% by weight of the semiconductor photoresist composition.

[0039] A semiconductor photoresist composition according to one embodiment can improve the sensitivity of a photoresist by containing the Sn-containing organometallic compound and the compound represented by chemical formula 1 within the specified content range.

[0040] A semiconductor photoresist composition according to one embodiment may contain the Sn-containing organometallic compound and the compound represented by chemical formula 1 in a weight ratio of 99.9:0.1 to 80:20. For example, a semiconductor photoresist composition may contain the Sn-containing organometallic compound and the compound represented by chemical formula 1 in a weight ratio of 95:5 to 85:15.

[0041] When the weight ratio of the Sn-containing organometallic compound to the compound represented by chemical formula 1 satisfies the aforementioned range, a semiconductor photoresist composition with excellent sensitivity can be provided.

[0042] The Sn-containing organometallic compound may contain at least one of an organooxy group and an organocarbonyloxy group.

[0043] The aforementioned Sn-containing organometallic compound is represented by the following chemical formula 2. [ka] In the aforementioned chemical formula 2, R 2 These are selected from substituted or unsubstituted C1-C20 alkyl groups, substituted or unsubstituted C3-C20 cycloalkyl groups, substituted or unsubstituted C2-C20 alkenyl groups, substituted or unsubstituted C2-C20 alkynyl groups, substituted or unsubstituted C6-C30 aryl groups, and substituted or unsubstituted C7-C30 arylalkyl groups. R 3 ~R 5 These are, independently, substituted or unsubstituted C1-C20 alkyl groups, substituted or unsubstituted C3-C20 cycloalkyl groups, substituted or unsubstituted C2-C20 alkenyl groups, substituted or unsubstituted C2-C20 alkynyl groups, substituted or unsubstituted C6-C30 aryl groups, substituted or unsubstituted C7-C30 arylalkyl groups, alkoxy and aryloxy (-OR) groups. d , here, R d(which are substituted or unsubstituted C1-C20 alkyl groups, substituted or unsubstituted C3-C20 cycloalkyl groups, substituted or unsubstituted C2-C20 alkenyl groups, substituted or unsubstituted C2-C20 alkynyl groups, substituted or unsubstituted C6-C30 aryl groups, or combinations thereof), carboxyl groups (-O(CO)R e , R e (which is hydrogen, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, or a combination thereof), alkylamide or dialkylamide (-NR f R g , here, R f and R g Each of these is independently hydrogen, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, or a combination thereof), amidato (-NR h (COR i ), here, R h and R i Each of these is independently hydrogen, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, or a combination thereof), amidinato (-NR) j C(NR k )R l , here, R j , R k and R lEach of these is independently hydrogen, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, or a combination thereof), alkylthio and arylthio (-SR) m , here, R m (which is a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, or a combination thereof) or a thiocarboxyl group (-S(CO)R n , R n (These are hydrogen, substituted or unsubstituted C1-C20 alkyl groups, substituted or unsubstituted C3-C20 cycloalkyl groups, substituted or unsubstituted C2-C20 alkenyl groups, substituted or unsubstituted C2-C20 alkynyl groups, substituted or unsubstituted C6-C30 aryl groups, or combinations thereof.) R 3 ~R 5 At least one of them is an alkoxy and an aryloxy (-OR d , here, R d (which are substituted or unsubstituted C1-C20 alkyl groups, substituted or unsubstituted C3-C20 cycloalkyl groups, substituted or unsubstituted C2-C20 alkenyl groups, substituted or unsubstituted C2-C20 alkynyl groups, substituted or unsubstituted C6-C30 aryl groups, or combinations thereof), carboxyl groups (-O(C=O)R e , R e (which is hydrogen, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, or a combination thereof), alkylamide or dialkylamide (-NR f R g , here, R f and R gEach of these is independently hydrogen, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, or a combination thereof), amidato (-NR h (C=OR i ), here, R h and R i Each of these is independently hydrogen, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, or a combination thereof), amidinato (-NR) j C(NR k )R l , here, R j , R k and R l Each of these is independently hydrogen, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, or a combination thereof), alkylthio and arylthio (-SR) m , here, R m (which are substituted or unsubstituted C1-C20 alkyl groups, substituted or unsubstituted C3-C20 cycloalkyl groups, substituted or unsubstituted C2-C20 alkenyl groups, substituted or unsubstituted C2-C20 alkynyl groups, substituted or unsubstituted C6-C30 aryl groups, or combinations thereof) and thiocarboxyl groups (-S(C=O)R n , R n (is selected from hydrogen, substituted or unsubstituted C1-C20 alkyl groups, substituted or unsubstituted C3-C20 cycloalkyl groups, substituted or unsubstituted C2-C20 alkenyl groups, substituted or unsubstituted C2-C20 alkynyl groups, substituted or unsubstituted C6-C30 aryl groups, or a combination thereof).

[0044] In one embodiment, the R 3 ~R 5 At least one of them is an alkoxy and an aryloxy (-OR d , here, R d (which are substituted or unsubstituted C1-C20 alkyl groups, substituted or unsubstituted C3-C20 cycloalkyl groups, substituted or unsubstituted C2-C20 alkenyl groups, substituted or unsubstituted C2-C20 alkynyl groups, substituted or unsubstituted C6-C30 aryl groups, or combinations thereof), and carboxyl groups (-O(C=O)R e , R e (is selected from hydrogen, substituted or unsubstituted C1-C20 alkyl groups, substituted or unsubstituted C3-C20 cycloalkyl groups, substituted or unsubstituted C2-C20 alkenyl groups, substituted or unsubstituted C2-C20 alkynyl groups, substituted or unsubstituted C6-C30 aryl groups, or a combination thereof).

[0045] On the other hand, the compound represented by chemical formula 2 has -OR as a ligand. d Or -OC(=O)R e By including this, patterns formed using a semiconductor photoresist composition containing it can exhibit excellent limiting resolution.

[0046] Also, -OR d Or -OC(=O)R e The ligand can determine the solubility of the compound represented by chemical formula 2 in a solvent.

[0047] The aforementioned R 2 These are substituted or unsubstituted C1-C8 alkyl groups, substituted or unsubstituted C3-C8 cycloalkyl groups, substituted or unsubstituted C2-C8 aliphatic unsaturated organic groups containing one or more double or triple bonds, substituted or unsubstituted C6-C20 aryl groups, substituted or unsubstituted C4-C20 heteroaryl groups, carbonyl groups, ethoxy groups, propoxy groups, or combinations thereof. R dThese are substituted or unsubstituted C1-C8 alkyl groups, substituted or unsubstituted C3-C8 cycloalkyl groups, substituted or unsubstituted C2-C8 alkenyl groups, substituted or unsubstituted C2-C8 alkynyl groups, substituted or unsubstituted C6-C20 aryl groups, or combinations thereof. R e This may be hydrogen, a substituted or unsubstituted C1-C8 alkyl group, a substituted or unsubstituted C3-C8 cycloalkyl group, a substituted or unsubstituted C2-C8 alkenyl group, a substituted or unsubstituted C2-C8 alkynyl group, a substituted or unsubstituted C6-C20 aryl group, or a combination thereof.

[0048] The aforementioned R 2 These are methyl group, ethyl group, propyl group, butyl group, isopropyl group, tert-butyl group, 2,2-dimethylpropyl group, cyclopropyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, ethenyl group, propenyl group, butenyl group, ethynyl group, propynyl group, butynyl group, phenyl group, tolyl group, xylene group, benzyl group, formyl group, acetyl group, propanoyl group, butanoyl group, pentanyl group, ethoxy group, propoxy group, or combinations thereof. R d These are ethyl group, propyl group, butyl group, isopropyl group, tert-butyl group, 2,2-dimethylpropyl group, cyclopropyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, ethenyl group, propenyl group, butenyl group, ethynyl group, propynyl group, butynyl group, phenyl group, tolyl group, xylene group, benzyl group, or combinations thereof. R e This may be hydrogen, ethyl group, propyl group, butyl group, isopropyl group, tert-butyl group, 2,2-dimethylpropyl group, cyclopropyl group, cyclobutyl group, cyclopentyl group, cyclohexyl group, ethenyl group, propenyl group, butenyl group, ethynyl group, propynyl group, butynyl group, phenyl group, tolyl group, xylene group, benzyl group, or a combination thereof.

[0049] In addition, the Sn-containing organometallic compound is represented by the following Chemical Formula 3 or Chemical Formula 4.

Chem.

Chem.

[0050] The solvent contained in the semiconductor photoresist composition according to one embodiment may be an organic solvent, and may include, but is not limited to, aromatic compounds (e.g., xylene, toluene), alcohols (e.g., 4-methyl-2-pentanol, 4-methyl-2-propanol, 1-butanol, methanol, isopropyl alcohol, 1-propanol), ethers (e.g., anisole, tetrahydrofuran), esters (n-butylacetic acid, propylene glycol monomethyl ether acetate, ethyl acetate, ethyl lactic acid), ketones (e.g., methyl ethyl ketone, 2-heptanone), and mixtures thereof.

[0051] In addition to the Sn-containing organometallic compound, the compound represented by chemical formula 1, and the solvent, the semiconductor resist composition according to one embodiment may further contain a resin.

[0052] The aforementioned resin may be a phenolic resin containing at least one of the aromatic moistures listed in Group 2 below. [ka] The resin may have a weight-average molecular weight of 500 to 20,000.

[0053] The resin may be present in an amount of 0.1% to 50% by weight relative to the total content of the semiconductor photoresist composition.

[0054] When the aforementioned resin is included within the aforementioned content range, it can have excellent etching resistance and heat resistance.

[0055] On the other hand, the semiconductor photoresist composition is preferably composed of the aforementioned Sn-containing organometallic compound, the compound represented by chemical formula 1, a solvent, and a resin.

[0056] The semiconductor photoresist compositions described in the above-mentioned examples may further contain additives. Examples of such additives include surfactants, crosslinking agents, leveling agents, organic acids, quenchers, or combinations thereof.

[0057] The surfactant may be, but is not limited to, alkylbenzene sulfonates, alkylpyridinium salts, polyethylene glycol, quaternary ammonium salts, or combinations thereof.

[0058] Examples of crosslinking agents include, but are not limited to, melamine-based crosslinking agents, substituted urea-based crosslinking agents, acrylic-based crosslinking agents, epoxy-based crosslinking agents, or polymer-based crosslinking agents. Examples of crosslinking agents having at least two crosslinking substituents include compounds such as methoxymethylated glycolyl, butoxymethylated glycolyl, methoxymethylated melamine, butoxymethylated melamine, methoxymethylated benzoguanamine, butoxymethylated benzoguanamine, 4-hydroxybutyl acrylate, acrylic acid, urethane acrylate, acrylic methacrylate, 1,4-butanediol diglycidyl ether, glycidol, diglycidyl 1,2-cyclohexane dicarboxylate, trimethylpropane triglycidyl ether, 1,3-bis(glycidoxypropyl)tetramethyldisiloxane, methoxymethylated urea, butoxymethylated urea, or methoxymethylated thiourea.

[0059] Leveling agents are used to improve coating flatness during printing, and commercially available, known leveling agents can be used.

[0060] Organic acids may include, but are not limited to, p-toluenesulfonic acid, benzenesulfonic acid, p-dodecylbenzenesulfonic acid, 1,4-naphthalenedisulfonic acid, methanesulfonic acid, fluorinated sulfonates, malonic acid, citric acid, propionic acid, methacrylic acid, oxalic acid, lactic acid, glycolic acid, succinic acid, or combinations thereof.

[0061] The quencher may be diphenyl(p-toluyl)amine, methyldiphenylamine, triphenylamine, phenylenediamine, naphthylamine, diaminonaphthalene, or a combination thereof.

[0062] In one embodiment, the semiconductor photoresist composition according to the present invention may further contain an acid compound different from the compound represented by chemical formula 1.

[0063] The amount of these additives used can be easily adjusted according to the desired physical properties, and they can also be omitted.

[0064] Furthermore, the semiconductor photoresist composition may further use a silane coupling agent as an adhesive enhancer to improve adhesion to the substrate (for example, to improve the adhesion of the semiconductor photoresist composition to the substrate). Examples of the silane coupling agent include, but are not limited to, vinyltrimethoxysilane, vinyltriethoxysilane, vinyltrichlorosilane, vinyltris(β-methoxyethoxy)silane; or 3-methacryloxypropyltrimethoxysilane, 3-acryloxypropyltrimethoxysilane, p-styryltrimethoxysilane, 3-methacryloxypropylmethyldimethoxysilane, 3-methacryloxypropylmethyldiethoxysilane; and carbon-carbon unsaturated bond-containing silane compounds such as trimethoxy[3-(phenylamino)propyl]silane.

[0065] The semiconductor photoresist composition may not exhibit pattern distortion even when forming patterns with a high aspect ratio. Therefore, it can be used in photoresist processes using light with wavelengths of 5 nm to 150 nm, such as photoresist processes using light with wavelengths of 5 nm to 100 nm, such as photoresist processes using light with wavelengths of 5 nm to 100 nm, such as photoresist processes using light with wavelengths of 5 nm to 80 nm, such as photoresist processes using light with wavelengths of 5 nm to 50 nm, such as photoresist processes using light with wavelengths of 5 nm to 30 nm, and photoresist processes using light with wavelengths of 5 nm to 20 nm, in order to form fine patterns with widths of 5 nm to 100 nm, such as fine patterns with widths of 5 nm to 80 nm, such as fine patterns with widths of 5 nm to 70 nm, such fine patterns with widths of 5 nm to 50 nm, such fine patterns with widths of 5 nm to 40 nm, such fine patterns with widths of 5 nm to 30 nm, and photoresist processes using light with wavelengths of 5 nm to 20 nm. Therefore, by using the semiconductor photoresist composition according to one embodiment, it is possible to realize extreme ultraviolet lithography using an EUV light source with a wavelength of approximately 13.5 nm.

[0066] On the other hand, according to another embodiment, a method for forming a pattern using the above-described semiconductor photoresist composition can be provided. For example, the manufactured pattern may be a photoresist pattern.

[0067] One embodiment of another pattern formation method includes the steps of forming an etching target film on a substrate, applying the aforementioned semiconductor photoresist composition on the etching target film to form a photoresist film, patterning the photoresist film to form a photoresist pattern, and using the photoresist pattern as an etching mask to etch the etching target film.

[0068] The method for forming a pattern using the semiconductor photoresist composition described above will be explained below with reference to Figure 1. Figure 1 is a cross-sectional view illustrating the method for forming a pattern using the semiconductor photoresist composition according to the present invention.

[0069] Referring to Figure 1(a), the system includes a priority etching target. An example of the etching target may be a thin film 102 formed on a semiconductor substrate 100. The following description will only cover the case where the etching target is a thin film 102. The surface of the thin film 102 is cleaned to remove any contaminants remaining on the thin film 102. The thin film 102 may be, for example, a silicon nitride film, a polysilicon film, or a silicon oxide film.

[0070] Next, a resist underlayer forming composition for forming a resist underlayer 104 on the surface of the cleaned thin film 102 is coated using a spin coating method. However, this example is not necessarily limited to this, and various known coating methods, such as spray coating, dip coating, knife-edge coating, and printing methods, such as inkjet printing and screen printing, can also be used.

[0071] The above-mentioned resist underlayer coating process can be omitted, and the following will describe the case where the resist underlayer is coated.

[0072] Subsequently, a drying and baking process is performed to form a resist underlayer film 104 on the thin film 102. The baking process is carried out at approximately 100 to 500°C, for example, at approximately 100°C to 300°C.

[0073] The resist underlayer 104 is formed between the substrate 100 and the photoresist film 106. This prevents the scattering of irradiation lines reflected from the interface between the substrate 100 and the photoresist film 106 or from the interlayer hard mask into unintended photoresist regions, thereby preventing non-uniformity of the photoresist linewidth and interference with pattern formation.

[0074] Referring to Figure 1(b), the above-mentioned semiconductor photoresist composition is coated onto the resist underlayer film 104 to form a photoresist film 106. The photoresist film 106 may also be formed by coating the above-mentioned semiconductor photoresist composition onto a thin film 102 formed on the substrate 100 and then curing it through a heat treatment process.

[0075] More specifically, the step of forming a pattern using a semiconductor photoresist composition may include a process of applying the above-described semiconductor photoresist composition onto a substrate 100 on which a thin film 102 is formed by spin coating, slit coating, inkjet printing, etc., and a process of drying the applied semiconductor photoresist composition to form a photoresist film 106.

[0076] Since the compositions for semiconductor photoresists have already been explained in detail, we will omit further explanation.

[0077] Next, a first baking process is performed to heat the substrate 100 on which the photoresist film 106 is formed. The first baking process can be carried out at a temperature of approximately 80°C to approximately 120°C.

[0078] Referring to Figure 1(c), the photoresist film 106 is selectively exposed using a patterned mask 110.

[0079] As an example, examples of light that can be used in the exposure process include not only short-wavelength light such as the activation irradiation wire i-line (wavelength 365 nm), KrF excimer laser (wavelength 248 nm), and ArF excimer laser (wavelength 193 nm), but also high-energy wavelength light such as EUV (Extreme ultraviolet; wavelength 13.5 nm) and E-Beam (electron beam).

[0080] More specifically, the exposure light in one embodiment may be short-wavelength light having a wavelength range of 5 nm to 150 nm, or it may be light having a high-energy wavelength such as EUV (Extreme ultraviolet; wavelength 13.5 nm) or E-Beam (electron beam).

[0081] In the photoresist film 106, the exposed region 106b forms a polymer through crosslinking reactions such as condensation between organometallic compounds, thereby acquiring a different solubility from the unexposed region 106a of the photoresist film 106.

[0082] Next, a second baking process is performed on the substrate 100. The second baking process can be carried out at a temperature of approximately 90°C to approximately 200°C. By performing the second baking process, the exposed region 106b of the photoresist film 106 becomes difficult to dissolve in the developer.

[0083] Figure 1(d) shows a photoresist pattern 108 formed by dissolving and removing the photoresist film 106a corresponding to the unexposed region using a developer. Specifically, the photoresist pattern 108 corresponding to the negative tone image is completed by dissolving and then removing the photoresist film 106a corresponding to the unexposed region using an organic solvent such as 2-heptanone.

[0084] As mentioned above, the developer used in the pattern formation method according to one embodiment may be an organic solvent. Examples of organic solvents used in the pattern formation method according to one embodiment include ketones such as methyl ethyl ketone, acetone, cyclohexanone, and 2-heptanone; alcohols such as 4-methyl-2-propanol, 1-butanol, isopropanol, 1-propanol, and methanol; esters such as propylene glycol monomethyl ether acetate, ethyl acetate, ethyl lactic acid, n-butylacetic acid, and butyrolactone; aromatic compounds such as benzene, xylene, and toluene; or combinations thereof.

[0085] However, the photoresist pattern in one embodiment is not necessarily limited to being formed as a negative tone image, and may be formed to have a positive tone image. In this case, examples of developers that can be used to form a positive tone image include quaternary ammonium hydroxide compositions such as tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, or combinations thereof.

[0086] As mentioned above, the photoresist pattern 108 formed by exposure with light having wavelengths such as i-line (wavelength 365nm), KrF excimer laser (wavelength 248nm), and ArF excimer laser (wavelength 193nm), as well as high-energy light such as EUV (Extreme ultraviolet; wavelength 13.5nm) and E-Beam (electron beam), can have a width of thickness from 5nm to 100nm. For example, the photoresist pattern 108 can be formed with a thickness of 5nm to 90nm, 5nm to 80nm, 5nm to 70nm, 5nm to 60nm, 5nm to 50nm, 5nm to 40nm, 5nm to 30nm, and 5nm to 20nm.

[0087] On the other hand, the photoresist pattern 108 can have a half-pitch of about 50 nm or less, for example, 40 nm or less, for example, 30 nm or less, for example, 20 nm or less, for example, 15 nm or less, and a pitch having a line width roughness of about 10 nm or less, about 5 nm or less, about 3 nm or less, or about 2 nm or less.

[0088] Next, the photoresist pattern 108 is used as an etching mask to etch the resist underlayer film 104. This etching process forms an organic film pattern 112. The formed organic film pattern 112 can have a width corresponding to the photoresist pattern 108.

[0089] Referring to Figure 1(e), the photoresist pattern 108 is applied as an etching mask to etch the exposed thin film 102. As a result, the thin film is formed with the thin film pattern 114.

[0090] The thin film 102 can be etched, for example, by dry etching using an etching gas. The etching gas can be, for example, CHF3, CF4, Cl2, BCl3, or a mixture thereof.

[0091] In the previously performed exposure process, the thin film pattern 114 formed using the photoresist pattern 108 formed by the exposure process using an EUV light source can have a width corresponding to the photoresist pattern 108. For example, it can have a width of 5 nm to 100 nm, similar to the photoresist pattern 108. For instance, the thin film pattern 114 formed by the exposure process using an EUV light source can have widths of 5 nm to 90 nm, 5 nm to 80 nm, 5 nm to 70 nm, 5 nm to 60 nm, 5 nm to 50 nm, 5 nm to 40 nm, 5 nm to 30 nm, and 5 nm to 20 nm, similar to the photoresist pattern 108, and more specifically, can be formed with a width of 20 nm or less. [Examples]

[0092] The present invention will be described in more detail below through the examples of the manufacturing of the semiconductor photoresist composition described above. However, the technical features of the present invention are not limited by the following examples.

[0093] Synthesis of organometallic compounds Synthesis Example 1 Place 340.7g of t-butylSnPh and 300g of propionic acid in a 250ml two-necked round-bottom flask and heat under reflux for 24 hours.

[0094] The unreacted propionic acid is removed under reduced pressure to obtain the compound represented by the following chemical formula 5. [ka]

[0095] Synthesis Example 2 Add 30 ml of anhydrous pentane to 10 g of t-AmylSnCl3, maintain the temperature at 0°C, then add 7.4 g of diethylamine and 6.1 g of ethanol, and stir at room temperature for 1 hour. Once the reaction is complete, filter, concentrate, and vacuum dry to obtain the compound shown in chemical formula 6 below. [ka]

[0096] Synthesis Example 3 After dissolving 10 g of dibutyltin dichloride in 30 mL of ether, 70 mL of 1 M sodium hydroxide (NaOH) aqueous solution is added and the mixture is stirred for 1 hour. After stirring, the resulting solid is filtered and washed three times with 25 mL of deionized water, and then dried under reduced pressure at 100°C to obtain an organometallic compound with a weight-average molecular weight of 1,500 represented by the following chemical formula 7. [ka]

[0097] (Manufacturing of semiconductor photoresist compositions) Examples 1-11 and Comparative Examples 1-6 The compounds represented by chemical formulas 5 to 7 obtained in Synthesis Examples 1 to 3 and the compounds represented by chemical formulas 8 to 10 below, or lacto acids, are dissolved in 4-methyl-2-pentanol at a concentration of 2 wt% in the weight ratios listed in Table 1 below, and filtered through a 0.1 μm PTFE (polytetrafluoroethylene) syringe filter to produce a semiconductor photoresist composition. [ka]

[0098] [Table 1]

[0099] Evaluation: Sensitivity, Line Edge Roughness (LER), and Exposure Tolerance (EL) ratings. The photoresist compositions according to the above examples and comparative examples were spin-coated onto a 200 mm circular silicon wafer whose surface was deposited on HMDS at 1500 rpm for 30 seconds, then baked at 100°C for 60 seconds (post-apply bake, PAB), and left at room temperature (23±2°C) for 30 seconds.

[0100] Subsequently, a linear array of 50 circular pads with a diameter of 500 μm was projected onto the wafer coated with the photoresist composition using EUV light (Lawrence Berkeley National Laboratory Micro Exposure Tool, MET). The pad exposure time was adjusted to ensure that the increasing EUV dose was applied to each pad.

[0101] Thereafter, the resist and the substrate were post-exposure baked on a hot plate at 160 °C for 120 seconds. The baked film was developed in a PGMEA solvent to form a negative tone image. Finally, the process was terminated by performing a hot plate bake at 150 °C for 2 minutes.

[0102] The resist linewidth with respect to the exposed Dose (Energy) change was measured using CD-SEM. The appropriate sensitivity to the exposure amount was confirmed from the resist linewidth values formed differently by each exposure Dose, and EL (Exposure Latitude) was calculated by the following formula 1. Also, after measuring LER from the CD-SEM image, the sensitivity, EL, and line edge roughness were evaluated according to the following criteria, and the results are shown in Table 2.

[0103] Formula 1: EL=(E +10% -E -10% ) / EopX100% (Eop: optimum exposure dose for the target CD, E +10% , E -10% : exposure dose within the error range (±10%) of the target CD)

[0104] [Sensitivity evaluation criteria] -A: Less than 16 mJ / cm 2 -B: 16 mJ / cm or more and 18 mJ / cm or less, 2 2 -C: More than 18 mJ / cm 2

[0105] [LER evaluation criteria] -○: 3 nm or less, -△: More than 3 nm and 6 nm or less, -X: More than 6 nm

[0106] [EL evaluation criteria] -A: 20% or more -B: 10% or more and less than 20% -C: 5% or more and less than 10% -D: 5% or less, ​​​​

[0107] [Table 2]

[0108] The results in Table 2 confirm that the patterns formed using the semiconductor photoresist compositions of Examples 1 to 11 exhibit superior sensitivity, LER, and / or EL characteristics compared to Comparative Examples 1 to 6.

[0109] Although specific embodiments of the present invention have been described and illustrated above, it is obvious to those ordinary skill in the art that the present invention is not limited to the described embodiments, and that various modifications and variations are possible without departing from the spirit and scope of the invention. Therefore, such modifications or variations should not be understood individually from the technical spirit or viewpoint of the present invention, and the modified embodiments should be considered to fall within the scope of the claims of the present invention. [Explanation of Symbols]

[0110] 100...Substrate, 102...Thin film, 104...Resist underlayer film, 106...Photoresist film, 106a...Unexposed region, 106b...Exposed region, 108...Photoresist pattern, 112...Organic film pattern, 110...Patterned mask, 114...Thin film pattern.

Claims

1. Sn-containing organometallic compound; Compounds represented by the following chemical formula 1; and Compositions for semiconductor photoresists containing a solvent: 【Chemistry 1】 In the aforementioned chemical formula 1, L １ These are single bonds, or substituted or unsubstituted C1-C10 alkylene groups. R1 is a substituted or unsubstituted C2-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, or a substituted or unsubstituted C7-C30 arylalkyl group.

2. The semiconductor photoresist composition according to claim 1, wherein R1 is an ethyl group, a propyl group, a butyl group, an isopropyl group, a tert-butyl group, a 2,2-dimethylpropyl group, a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, an ethenyl group, a propenyl group, a butenyl group, an ethynyl group, a propynyl group, a butynyl group, a phenyl group, a tolyl group, a xylene group, or a benzyl group.

3. The semiconductor photoresist composition according to claim 1, wherein the compound represented by chemical formula 1 is one selected from the compounds listed in group 1 below: 【Chemistry 2】

4. The semiconductor photoresist composition according to claim 1, wherein the compound represented by chemical formula 1 is contained in an amount of 0.01 to 10% by weight based on 100% by weight of the semiconductor photoresist composition.

5. The semiconductor photoresist composition according to claim 1, wherein the compound represented by chemical formula 1 is contained in an amount of 0.05 to 5% by weight based on 100% by weight of the semiconductor photoresist composition.

6. The semiconductor photoresist composition according to claim 1, wherein the Sn-containing organometallic compound is present in an amount of 0.5% to 30% by weight based on 100% by weight of the semiconductor photoresist composition.

7. The semiconductor photoresist composition according to claim 1, wherein the Sn-containing organometallic compound and the compound represented by chemical formula 1 are contained in a weight ratio of 99.9:0.1 to 80:

20.

8. The semiconductor photoresist composition according to claim 1, further comprising additives such as a surfactant, a crosslinking agent, a leveling agent, an organic acid, an inhibitor (quencher), or a combination thereof.

9. The semiconductor photoresist composition according to claim 1, wherein the Sn-containing organometallic compound comprises at least one of an organic oxy group and an organic carbonyl oxy group.

10. The Sn-containing organometallic compound is represented by the following chemical formula 2, the semiconductor photoresist composition according to claim 1: 【Transformation 3】 R ２ These are selected from substituted or unsubstituted C1-C20 alkyl groups, substituted or unsubstituted C3-C20 cycloalkyl groups, substituted or unsubstituted C2-C20 alkenyl groups, substituted or unsubstituted C2-C20 alkynyl groups, substituted or unsubstituted C6-C30 aryl groups, and substituted or unsubstituted C7-C30 arylalkyl groups. R ３ ~R ５ are each independently a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, a substituted or unsubstituted C7-C30 arylalkyl group, alkoxy and aryloxy (-OR ｄ , where R ｄ is a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, or a combination thereof), a carboxyl group (-O(CO)R ｅ , R ｅ is hydrogen, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, or a combination thereof), an alkylamide or dialkylamide (-NR ｆ R ｇ , where R ｆ and R ｇ are each independently hydrogen, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, or a combination thereof), an amidato (-NR ｈ (COR ｉ ), where R ｈ and R ｉ Each of these is independently hydrogen, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, or a combination thereof), amidinato (-NR ｊ C (NR ｋ ) R ｌ Here, R ｊ , R ｋ and R ｌ Each of these is independently hydrogen, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, or a combination thereof), alkylthio and arylthio (-SR ｍ Here, R ｍ (which is a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, or a combination thereof) or a thiocarboxyl group (-S(CO)R ｎ , R ｎ (These are hydrogen, substituted or unsubstituted C1-C20 alkyl groups, substituted or unsubstituted C3-C20 cycloalkyl groups, substituted or unsubstituted C2-C20 alkenyl groups, substituted or unsubstituted C2-C20 alkynyl groups, substituted or unsubstituted C6-C30 aryl groups, or combinations thereof.) R ３ ~R ５ At least one of them is an alkoxy and an aryloxy (-OR ｄ Here, R ｄ (These are substituted or unsubstituted C1-C20 alkyl groups, substituted or unsubstituted C3-C20 cycloalkyl groups, substituted or unsubstituted C2-C20 alkenyl groups, substituted or unsubstituted C2-C20 alkynyl groups, substituted or unsubstituted C6-C30 aryl groups, or combinations thereof), carboxyl groups (-O(C=O)R ｅ , R ｅ (-NR) ｆ R ｇ Here, R ｆ and R ｇ Each of these is independently hydrogen, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, or a combination thereof), amidato (-NR ｈ (C = OR ｉ ), here, R ｈ and R ｉ Each of these is independently hydrogen, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, or a combination thereof), amidinato (-NR ｊ C (NR ｋ ) R ｌ Here, R ｊ , R ｋ and R ｌ Each of these is independently hydrogen, a substituted or unsubstituted C1-C20 alkyl group, a substituted or unsubstituted C3-C20 cycloalkyl group, a substituted or unsubstituted C2-C20 alkenyl group, a substituted or unsubstituted C2-C20 alkynyl group, a substituted or unsubstituted C6-C30 aryl group, or a combination thereof), alkylthio and arylthio (-SR ｍ Here, R ｍ (which are substituted or unsubstituted C1-C20 alkyl groups, substituted or unsubstituted C3-C20 cycloalkyl groups, substituted or unsubstituted C2-C20 alkenyl groups, substituted or unsubstituted C2-C20 alkynyl groups, substituted or unsubstituted C6-C30 aryl groups, or combinations thereof) and thiocarboxyl groups (-S(C=O)R ｎ , R ｎ (is selected from hydrogen, substituted or unsubstituted C1-C20 alkyl groups, substituted or unsubstituted C3-C20 cycloalkyl groups, substituted or unsubstituted C2-C20 alkenyl groups, substituted or unsubstituted C2-C20 alkynyl groups, substituted or unsubstituted C6-C30 aryl groups, or a combination thereof.)

11. The aforementioned R ２ These are substituted or unsubstituted C1-C8 alkyl groups, substituted or unsubstituted C3-C8 cycloalkyl groups, substituted or unsubstituted C2-C8 aliphatic unsaturated organic groups containing one or more double or triple bonds, substituted or unsubstituted C6-C20 aryl groups, substituted or unsubstituted C4-C20 heteroaryl groups, carbonyl groups, ethoxy groups, propoxy groups, or combinations thereof. R ｄ These are substituted or unsubstituted C1-C8 alkyl groups, substituted or unsubstituted C3-C8 cycloalkyl groups, substituted or unsubstituted C2-C8 alkenyl groups, substituted or unsubstituted C2-C8 alkynyl groups, substituted or unsubstituted C6-C20 aryl groups, or combinations thereof. R ｅ The semiconductor photoresist composition according to claim 10, wherein is hydrogen, a substituted or unsubstituted C1-C8 alkyl group, a substituted or unsubstituted C3-C8 cycloalkyl group, a substituted or unsubstituted C2-C8 alkenyl group, a substituted or unsubstituted C2-C8 alkynyl group, a substituted or unsubstituted C6-C20 aryl group, or a combination thereof.

12. The Sn-containing organometallic compound is represented by the following chemical formula 3 or chemical formula 4, the semiconductor photoresist composition according to claim 1: 【Chemistry 4】 In the aforementioned chemical formula 3, R ６ These are the C1-C31 hydrocarbyl group, where 0 < z ≤ 2 and 0 < (z + x) ≤ 4; 【Transformation 5】 In the aforementioned chemical formula 4, R ７ These are substituted or unsubstituted C1-C20 alkyl groups, substituted or unsubstituted C3-C20 cycloalkyl groups, substituted or unsubstituted C2-C20 aliphatic unsaturated organic groups containing one or more double or triple bonds, substituted or unsubstituted C6-C30 aryl groups, substituted or unsubstituted C4-C30 heteroaryl groups, carbonyl groups, ethylene oxide groups, propylene oxide groups, or combinations thereof. X is sulfur (S), selenium (Se), or tellurium (Te), Y is -OR ｏ or -OC(=O)R ｐ And, The aforementioned R ｏ These are substituted or unsubstituted C1-C20 alkyl groups, substituted or unsubstituted C3-C20 cycloalkyl groups, substituted or unsubstituted C2-C20 alkenyl groups, substituted or unsubstituted C2-C20 alkynyl groups, substituted or unsubstituted C6-C30 aryl groups, or combinations thereof. R ｐ These are hydrogen, substituted or unsubstituted C1-C20 alkyl groups, substituted or unsubstituted C3-C20 cycloalkyl groups, substituted or unsubstituted C2-C20 alkenyl groups, substituted or unsubstituted C2-C20 alkynyl groups, substituted or unsubstituted C6-C30 aryl groups, or combinations thereof. The aforementioned n, m, l, and k are independent integers between 1 and 20.

13. Steps include forming an etching target film on a substrate; A step of forming a photoresist film by applying the semiconductor photoresist composition according to any one of claims 1 to 12 onto the film to be etched; Steps of patterning the photoresist film to form a photoresist pattern; and A pattern formation method comprising the step of etching a film to be etched using the aforementioned photoresist pattern as an etching mask.

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