Method for manufacturing a bonded body and method for manufacturing a ceramic circuit board using the same

Abstract

A bonded object production method according to one embodiment of the present invention involves performing, by using continuous furnace, a process on a laminate that includes a metallic member, a ceramic member, and a brazing material layer disposed therebetween while conveying the laminate. The bonded object production method is characterized by comprising: a step for heating the laminate in an inert atmosphere from 200°C to a bonding temperature at an average temperature increase rate of at least 15°C / min; a step for bonding the laminate in an inert atmosphere at the bonding temperature within a range of 600-950°C; and a step for cooling the laminate from the bonding temperature down to 200°C at an average temperature decrease rate of at least 15°C / min. In addition, the ceramic substrate is preferably a silicon nitride substrate.

Description

Technical Field

[0001] The embodiments described below generally relate to a method for manufacturing a bonded body and a method for manufacturing a ceramic circuit board using the same.

Background Art

[0002] Ceramic circuit boards are used for circuit boards on which semiconductor elements are mounted. For example, Japanese Patent No. 6789955 (Patent Document 1) discloses a ceramic circuit board in which the size of the brazing layer protrusion portion is controlled. The ceramic circuit board of Patent Document 1 exhibits excellent temperature cycle test (TCT) characteristics. In a ceramic circuit board, a ceramic substrate and a copper plate are joined via a brazing material layer. An active metal brazing material containing Ti is used for the brazing material layer. The bonding method using an active metal brazing material is called an active metal bonding method. The active metal bonding method is performed at 700 to 900°C. Further, the heating process is performed in a vacuum. By bonding in a vacuum, the reaction between Ti in the brazing material and the ceramic substrate is promoted. For example, when a silicon nitride substrate is used, Ti and nitrogen react to form a titanium nitride layer. By forming the titanium nitride layer, the silicon nitride substrate and the copper plate are firmly joined. Conventionally, a batch furnace has been used for bonding in a vacuum. The batch furnace can be evacuated by sealing the inside of the furnace. In order to evacuate, a vacuum pumping process is required. Further, since it is necessary to uniformly increase the temperature inside the furnace, the heating rate was about 1 to 2°C / minute. For this reason, the batch furnace took a long time for the process until it was maintained at the heating temperature. Also, it took a long time to lower the temperature from the bonding temperature to room temperature. In the batch furnace, the bonded body cannot be taken out unless it is cooled to room temperature. If forced cooling is performed to return to room temperature, it may cause damage to the batch furnace. Also, the amount that can be processed at one time is determined by the size of the furnace. That is, it cannot be said that the active metal bonding method using a batch furnace is excellent in mass productivity. To improve mass production efficiency, activated metal joining methods are being carried out in continuous furnaces. For example, Japanese Patent Publication No. 7-187839 (Patent Document 2) discloses joining in a nitrogen atmosphere using a continuous furnace. Because joining can be done in a nitrogen atmosphere, a vacuuming process is unnecessary. In addition, the continuous furnace can heat and join materials while they are being transported by a belt conveyor or the like. [Prior art documents] [Patent Documents]

[0003] [Patent Document 1] Patent No. 6789955 [Patent Document 2] Japanese Patent Application Publication No. 7-187839 [Overview of the project] [Problems that the invention aims to solve]

[0004] Even the ceramic circuit board described in Patent Document 2 possessed certain TCT characteristics. However, the yield was not necessarily good. Furthermore, there was variability in the bonding state, and further improvement of TCT characteristics has not been achieved. In recent years, the operating temperature of semiconductor devices has risen to around 170°C. In the future, it is expected to exceed 200°C. The ceramic circuit board described in Patent Document 2 did not provide sufficient characteristics. This invention aims to address these problems and to provide a method for manufacturing joined bodies with a good yield using a continuous furnace. [Means for solving the problem]

[0005] A method for manufacturing a bonded body according to an embodiment is a method for manufacturing a bonded body that processes a laminated body including a metal member, a ceramic member, and a brazing material layer provided between them, using a continuous furnace, and comprises the steps of: heating the laminated body in an inert atmosphere at an average heating rate of 15°C / min or more from 200°C to the bonding temperature; bonding the laminated body in an inert atmosphere at a bonding temperature within the range of 600°C to 950°C; and cooling the laminated body from the bonding temperature to 200°C at an average cooling rate of 15°C / min or more. [Brief explanation of the drawing]

[0006] [Figure 1] A diagram showing an example of a joint according to the embodiment. [Figure 2] A figure showing another example of the joint according to the embodiment. [Figure 3] A figure showing an example of a method for manufacturing a joined body according to an embodiment using a continuous furnace. [Figure 4] A diagram showing an example of the temperature profile of a laminate in a continuous furnace. [Figure 5] A figure showing an example of a ceramic circuit board according to the embodiment. [Modes for carrying out the invention]

[0007] A method for manufacturing a bonded body according to an embodiment is a method for manufacturing a bonded body that processes a laminated body including a metal member, a ceramic member, and a brazing material layer provided between them, using a continuous furnace, and comprises the steps of: heating the laminated body in an inert atmosphere at an average heating rate of 15°C / min or more from 200°C to the bonding temperature; bonding the laminated body in an inert atmosphere at a bonding temperature within the range of 600°C to 950°C; and cooling the laminated body from the bonding temperature to 200°C at an average cooling rate of 15°C / min or more. A continuous furnace is a furnace that heats the workpiece while it is being transported. Continuous furnaces are classified into several types based on their transport method, including belt conveyor systems, walking beam systems, pusher systems, and roller hearth systems. Belt conveyors and transport trays are used to transport the workpiece. A furnace in which the heat treatment area is enclosed in a tunnel-like structure is sometimes called a tunnel furnace. A tunnel furnace is a type of continuous furnace. Continuous furnaces are excellent for mass production because they can heat the workpiece while it is being transported. The object to be heated during transport is a laminate having a laminated structure of three or more layers, consisting of a metal component, a brazing layer, and a ceramic component. The laminate becomes a joined body when it is heat-bonded. Figures 1 and 2 show examples of joined bodies. In Figures 1 and 2, 1 is the joined body, 2 is the ceramic substrate, 3 is the brazing layer, and 4 is the metal plate. Joint 1-1 is defined as one on which the metal plate 4 is bonded to only one side of the ceramic substrate 2. Joint 1-2 is defined as one on which the metal plate 4 is bonded to both sides of the ceramic substrate. In joined body 1-2, a pair of metal plates 4 are bonded to the ceramic substrate 2, each via a brazing layer 3. The ceramic substrate 2 is located between the pair of metal plates 4. Figure 3 shows an example of a method for manufacturing a joined body according to an embodiment using a continuous furnace. In Figure 3, 5 is the laminate, 6 is the belt conveyor, 7 is the inlet pipe, 8 is the exhaust pipe, and 10 is the continuous furnace. Figure 3 illustrates a continuous furnace with a belt conveyor system. The structure of the continuous furnace is not limited to this example. Also, for convenience, the conveying direction of the laminate is set from left to right, but it is not limited to this. Figures 1-3 illustrate a metal plate as the metal member and a ceramic substrate as the ceramic member. The configuration of the joint according to this embodiment is not limited to this example. Either one or both of the metal member and the ceramic member may have an uneven or irregular shape instead of being plate-like. The embodiments will be described below with reference to an example in which the metal member is a metal plate and the ceramic member is a ceramic substrate. If the metal member and ceramic member are not in the shape of a flat plate, the metal plate in the following description can be replaced with a metal member, and the ceramic substrate can be replaced with a ceramic member. The laminate for creating joint 1-1 has a three-layer structure consisting of a metal plate 4, a brazing layer 3, and a ceramic substrate 2. The laminate for creating joint 1-2 has a five-layer structure consisting of a metal plate 4, a brazing layer 3, a ceramic substrate 2, a brazing layer 3, and a metal plate 4. The laminate may also have a seven-layer structure, such as a metal plate 4, a brazing layer 3, a ceramic substrate 2, a brazing layer 3, a metal plate 4, a brazing layer 3, and a ceramic substrate 2. Furthermore, the number of layers may be increased as needed. In a manufacturing method using a continuous furnace, the laminate is heated while being transported. The transport speed of the laminate may be constant or may change along the way. Furthermore, the transport of the laminate may be stopped along the way if necessary. The transport path may be straight or curved. The transport path may be flat or include slopes (uphill or downhill). A straight and flat transport path is preferable. A straight and flat path helps to suppress misalignment of the laminated structure.

[0008] The manufacturing method using a continuous furnace has three steps: a heating step, a heat bonding step, and a cooling step. The heating step is the process of raising the temperature of the laminate to the bonding temperature. The heat bonding step is the process of maintaining the laminate at the bonding temperature. The cooling step is the process of lowering the temperature of the laminate from the bonding temperature. The heating process involves heating the laminate from 200°C to the bonding temperature. The average heating rate of the laminate during the heating process is 15°C / min or higher. The average heating rate is the average of the heating rates of the laminate from 200°C to the bonding temperature. By increasing the average heating rate to 15°C / min or higher, the heating time can be shortened. The heating rate may be constant or may change during the process. The heating process may also be carried out in an inert atmosphere. In batch furnaces, the vacuuming process was time-consuming. Furthermore, because batch furnaces heat the stacked materials in a sealed space, the heating rate was only about 1-3°C / minute. Therefore, it was not ideal for mass production. Additionally, increasing the size of the sealed space in the batch furnace increased the vacuuming time. From this perspective, there were limitations to improving mass production efficiency using batch furnaces.

[0009] By maintaining an average heating rate of 15°C / minute or more for the laminate from 200°C to the bonding temperature, the heating process time can be shortened. Furthermore, performing the process in an inert atmosphere eliminates the need for a vacuum evacuation step, further reducing the overall time. If the average heating rate is less than 15°C / min, the time-saving effect is insufficient. Also, if the heating rate while transporting the laminate is slow, the transport distance will increase. A longer transport distance leads to the need for larger equipment. Therefore, an average heating rate of 15°C / min or higher is effective. There is no particular upper limit to the average heating rate, but 100°C / min or less is preferable. If the average heating rate exceeds 100°C / min, there is a possibility of variations in the heat transferred to the laminate. Variations in the heat transferred to the laminate lead to variations in bonding properties. Variations in bonding properties can result in problems such as bonding strength or warping. Therefore, an average heating rate of 15°C / min or more and 100°C / min or less is preferable, and more preferably 20°C / min or more and 70°C / min or less is preferable. Furthermore, an average heating rate of 30°C / min or more and 70°C / min or less is even preferable. Furthermore, for measuring the temperature of the laminate, a method of passing the laminate, equipped with thermocouples, through a continuous furnace is effective. A heating process, a heat bonding process, and a cooling process are performed, and the temperature profile of the laminate is measured. From the temperature profile, the average heating rate, the holding time at the bonding temperature, and the average cooling rate are calculated.

[0010] The heat bonding process is a process of bonding laminates by heating them at a bonding temperature. The heating process and the heat bonding process are carried out in an inert atmosphere, which is one or two selected from a nitrogen atmosphere or an argon atmosphere. The bonding temperature is within the range of 600°C to 950°C. Bonding performance decreases below 600°C. Warping occurs in the bonded material when the bonding temperature exceeds 950°C. Therefore, a bonding temperature of 600°C to 950°C, and more preferably between 700°C and 920°C, is preferred. Furthermore, the bonding temperature range is defined as a temperature range controlled within ±30°C of the bonding temperature within the 600°C to 950°C range. For example, if the bonding temperature is 850°C, the bonding temperature range refers to a temperature range controlled within 850°C ± 30°C. It is also preferable that the bonding temperature range is controlled within ±10°C of the bonding temperature. In other words, the bonding temperature is defined as the central temperature within a temperature range where fluctuations are kept within 60°C. A constant bonding temperature ensures stable bonding performance. When the metal plate is a copper plate, the bonding temperature is preferably in the range of 700°C to 950°C, and more preferably in the range of 850°C to 920°C. When the metal plate is an aluminum plate, the bonding temperature is 600°C. below ℃ Preferably, the temperature is 950°C or lower, and more preferably within the range of 620°C to 920°C. The time for holding the laminate at the bonding temperature is preferably 3 minutes or more. The continuous furnace heats and bonds the laminate while transporting it. In other words, it is preferable that the laminate held at the bonding temperature is transported through the furnace for 3 minutes or more. There is no particular upper limit to the time for holding the bonding temperature, but 60 minutes or less is preferable. If the time for holding the bonding temperature is long, the transport distance will increase, which may lead to the continuous furnace becoming larger. Also, warping of the bonded material may occur. For this reason, the time for holding the bonding temperature is preferably 3 minutes or more and 60 minutes or less, and more preferably 5 minutes or more and 40 minutes or less.

[0011] The cooling process is a process of cooling the laminate from the bonding temperature to 200°C. The average cooling rate of the laminate in the cooling process is 15°C / min or more. The boundary of the temperature range in the cooling process is set at 200°C because the solidification reaction of the solder layer described later can occur up to about 300°C. In the cooling process, it is effective to increase the cooling rate until the temperature range until the solidification reaction of the solder layer is almost completed. By increasing the average cooling rate in the cooling process, the time can be shortened. The cooling process is also preferably carried out in an inert atmosphere. The inert atmosphere is preferably a nitrogen atmosphere. If the average cooling rate is less than 15°C / min, the effect of time shortening is insufficient. Also, if the cooling rate during conveyance of the laminate is slow, the conveyance distance becomes long. A long conveyance distance leads to an increase in the size of the apparatus. Therefore, it is effective that the average cooling rate is 15°C / min or more. The upper limit of the average cooling rate is not particularly limited, but is preferably 100°C / min or less. If the average cooling rate exceeds 100°C / min, thermal stress is generated due to the laminate being cooled too quickly, and the reliability of the circuit board using this joined body decreases. Also, variations in joining properties, or problems such as joining strength and warping of the joined body may occur. For this reason, the average cooling rate is preferably in the range of 15°C / min or more and 100°C / min or less, more preferably in the range of 20°C / min or more and 70°C / min or less. Further, the average cooling rate is more preferably in the range of 30°C / min or more and 70°C / min or less.

[0012] The difference between the average heating rate and the average cooling rate is preferably within 20°C / min. The difference between the average heating rate and the average cooling rate is represented by |average heating rate - average cooling rate| ≤ 20°C / min. When the solder layer is heated, a melting reaction and a solidification reaction occur. These reactions occur in the heating process and the cooling process. By reducing the difference between the average heating rate and the average cooling rate, the stress generated by the reaction can be homogenized. Thereby, problems such as warping can be suppressed. The heating rate from room temperature to 200°C is arbitrary. Similarly, the cooling rate from 200°C to room temperature is arbitrary.

[0013] As described above, the method for manufacturing a joined body using a continuous furnace includes three steps: a temperature rising step, a heat joining step, and a temperature falling step. These steps may be divided into treatment zones in the continuous furnace. Also, each treatment zone may be divided into a plurality of zones. A partition or the like may be provided at the boundary between the zones, excluding the conveyance path of the laminate. It is effective to set the heating temperature of each zone according to the average temperature rising rate of the laminate in the temperature rising step and the joining temperature of the laminate in the heat joining step. For example, by adjusting the temperature of the heaters provided in each zone, it becomes possible to control the heating temperature. Also, in the temperature falling step, temperature control for temperature falling (for example, temperature control by a cooling mechanism) may be performed. For example, the temperature rising step may be divided into a plurality of treatment zones such as a normal temperature zone, from normal temperature to 200°C, from 200°C to 400°C, from 400°C to 600°C, from 600°C to the joining temperature, and a zone for holding at the joining temperature. In the treatment zone that is first heated in the temperature rising step, it is preferable that the temperature of the laminate is within the range of 150°C or more and 400°C or less. The treatment zone that is first heated is the first heating zone in the continuous furnace. The method for manufacturing a joined body according to the embodiment controls the temperature rising rate from 200°C to the joining temperature in the temperature rising step. By setting the temperature of the laminate within the range of 150°C or more and 400°C or less, preferably 180°C or more and 370°C or less, in the treatment zone that is first heated, it becomes easier to control the temperature rising rate from 200°C. Also, within this temperature range, the effect of degreasing the binder in the solder paste can be obtained. Also, the inside of the continuous furnace is not a sealed space. For example, the pressure inside the continuous furnace is the atmospheric pressure. The heating process, heat bonding process, and cooling process are preferably carried out in an inert atmosphere. The inert atmosphere is one or two selected from a nitrogen atmosphere or an argon atmosphere. Nitrogen is cheaper than argon. For this reason, a nitrogen atmosphere is preferred as the inert atmosphere. The nitrogen content in the nitrogen atmosphere is preferably in the range of 90% by volume or more and 100% by volume or less. If the nitrogen content in the nitrogen atmosphere is less than 90% by volume, it may adversely affect the bonding performance. For example, if the oxygen gas content increases, the brazing material layer may oxidize, which may adversely affect the bonding performance. For this reason, the nitrogen content in the nitrogen atmosphere is preferably in the range of 90% by volume or more and 100% by volume or less, and more preferably in the range of 98% by volume or more and 100% by volume or less. The purity of the nitrogen gas supplied to the continuous furnace is considered to be the nitrogen content in the nitrogen atmosphere. Furthermore, if the heating process, heat bonding process, and cooling process are divided into multiple processing zones, the purity (volume %) of the nitrogen gas supplied to each processing zone is considered to be the nitrogen content in the nitrogen atmosphere. Furthermore, the dew point of nitrogen gas is preferably within the range of -50°C to 0°C. The dew point can be determined by measuring the dew point of the nitrogen gas supplied into the continuous furnace. The dew point is the temperature at which water vapor in a gas condenses. By keeping the dew point of nitrogen gas within the aforementioned range, the generation of water vapor in the continuous furnace can be suppressed. Since the presence of water vapor in the atmosphere inside the continuous furnace affects bonding performance, controlling the dew point of nitrogen gas is effective.

[0014] Figure 4 shows an example of the temperature profile of a laminate in a continuous furnace. In the graph shown in Figure 4, the horizontal axis represents time, and the vertical axis represents the temperature of the laminate. Figure 4 shows the temperature profile when the temperature of the laminate is 200 degrees or higher in a continuous furnace. In the example shown in Figure 4, the laminate is heated to 200°C in the initial heating zone of the heating process. In the subsequent heating process S1, the laminate is heated to 860°C. The average heating rate is approximately 70°C / min. After the heating process S1, in the heat bonding process S2, the laminate is held at a bonding temperature of 860°C for 50 minutes. After the heat bonding process S2, in the cooling process S3, the laminate is cooled to 200°C. The average cooling rate is approximately 60°C / min.

[0015] Furthermore, it is preferable that the average conveying speed of the laminate be 1 cm / min or more. The average conveying speed is the average value of the movement speed of the laminate when conveying it through the heating process, the heat bonding process, and the cooling process. If the average conveying speed is less than 1 cm / min, the mass production efficiency may decrease due to the slow conveying speed. If the process includes a step where conveying is stopped, the stopped time is counted as a conveying speed of 0 cm / min. For example, if the process is 30 minutes at a conveying speed of 5 cm / min and 10 minutes at a conveying speed of 10 cm / min, the average conveying speed will be 6.3 cm / min. Also, if the process is 60 minutes at a conveying speed of 5 cm / min and 30 minutes with conveying stopped, the average conveying speed will be 3.3 cm / min. While there is no particular upper limit to the average conveying speed, it is preferably 30 cm / min or less. A high average conveying speed can lead to a longer conveying distance and potentially increase the size of the process. Furthermore, a high average conveying speed can result in uneven heat transfer to the laminate. For this reason, the average conveying speed is preferably within the range of 1 cm / min to 30 cm / min, and more preferably between 8 cm / min and 20 cm / min. Within this range, it is possible to improve mass productivity while ensuring uniform heat transfer to the laminate.

[0016] It is preferable that the inert atmosphere is introduced through the inlet pipe 7 and discharged through the exhaust pipe 8. When the processing zones are separated, an inlet pipe 7 and an exhaust pipe 8 may be provided for each processing zone, or the inlet pipe 7 and exhaust pipe 8 may span across processing zones. When a laminate is heated, gas may be emitted from the brazing layer. Examples of such gases include oxygen, hydrocarbons, carbon dioxide, and carbon monoxide. It is preferable to provide an exhaust pipe 8 to prevent the gas emitted from the brazing layer from accumulating. It is also preferable to have an inlet pipe 7 at the front of the laminate 5 in the transport direction within the continuous furnace 10 and an exhaust pipe 8 at the rear. This helps to suppress contact between the gas emitted from the brazing layer and the laminate 5. If the gas emitted from the brazing material accumulates, the surface of the metal plate may discolor. Furthermore, conveying within the continuous furnace is preferably done using a belt conveyor system. A belt conveyor system makes it easier to control the conveying speed. During conveying, the stacked materials may be placed directly on the belt conveyor. Alternatively, the stacked materials may be placed on a conveying tray, and the conveying tray may be placed on the belt conveyor. A mesh belt may be used for the conveying belt. When using a conveying tray, the stacked materials may be conveyed using a walking beam system within the continuous furnace.

[0017] Examples of ceramic substrates 2 include silicon nitride substrates, aluminum nitride substrates, aluminum oxide substrates, and argil substrates. An argil substrate is a substrate made by mixing aluminum oxide and zirconium oxide. The thickness of the ceramic substrate 2 is preferably between 0.1 mm and 2 mm. If the substrate thickness is less than 0.1 mm, the strength may decrease. If the substrate thickness is greater than 2 mm, the ceramic substrate may act as a thermal resistor, potentially reducing the heat dissipation of the ceramic circuit board. For this reason, the thickness of the ceramic substrate 2 is preferably between 0.1 mm and 2 mm, and more preferably between 0.1 mm and 1 mm. The silicon nitride substrate preferably has a three-point bending strength of 500 MPa or more. Furthermore, the silicon nitride substrate preferably has a thermal conductivity of 60 W / m·K or more. Increasing the strength of the silicon nitride substrate allows for a reduction in substrate thickness. Therefore, the three-point bending strength of the silicon nitride substrate is preferably 500 MPa or more, and more preferably 650 MPa or more. The substrate thickness of the silicon nitride substrate can be reduced to 0.40 mm or less, and even more preferably 0.30 mm or less. However, the thickness of the silicon nitride substrate is not limited to 0.40 mm or less. The thickness of the ceramic substrate may be changed as needed. The three-point bending strength of an aluminum nitride substrate is approximately 300-450 MPa. On the other hand, the thermal conductivity of an aluminum nitride substrate is 160 W / m·K or higher. Due to the low strength of the aluminum nitride substrate, a substrate thickness of 0.60 mm or more is preferable. Aluminum oxide substrates have a three-point bending strength of around 300-450 MPa, but are inexpensive. Argil substrates have a high three-point bending strength of around 550 MPa, but their thermal conductivity is only about 30-50 W / m·K. Silicon nitride substrates are preferred as ceramic substrates. Because silicon nitride substrates have high strength, excellent reliability can be obtained even when thick copper plates are bonded to them.

[0018] Examples of metal plates 4 include copper plates, aluminum plates, and iron alloy plates. Furthermore, the copper plate is not limited to pure copper plates; it may also be a copper alloy plate. Examples of copper plates include those specified in JIS-H-3100(2018). JIS-H-3100(2018) corresponds to ISO1337, etc. Among these, oxygen-free copper (copper purity of 99.96% by mass or higher) is preferred. Oxygen-free copper is a type of pure copper plate. The aluminum plate is not limited to pure aluminum plates; it may also be an aluminum alloy plate. Examples of aluminum plates include those specified in JIS-H-4000(2014). JIS-H-4000(2014) corresponds to ISO209(2007). Furthermore, the metal plate is preferably a copper plate because copper plates have a higher thermal conductivity than aluminum plates. Examples of iron alloy plates include stainless steel. Stainless steel is a type of iron alloy containing Cr. Stainless steel is indicated as SUS in the JIS standard (Japanese Industrial Standards). Furthermore, the thickness of the metal plate 4 is preferably 0.2 mm or more. By increasing the thickness of the metal plate 4, both heat dissipation and electrical conductivity can be improved. For this reason, the thickness of the metal plate 4 is preferably 0.2 mm or more, and more preferably 0.5 mm or more. There is no particular upper limit to the thickness of the metal plate 4, but it is preferably 10 mm or less. If the metal plate exceeds 10 mm, the burden of processing it into the desired shape may increase. Also, if the metal plate is thicker than 3 mm, it may become difficult to perform the etching process described later. For this reason, if an etching process is performed, the thickness of the metal plate is preferably 0.2 mm or more and 3 mm or less, and more preferably 0.5 mm or more and 2 mm or less. If an etching process is not performed, a metal plate processed into the desired shape is used.

[0019] Furthermore, the length and width dimensions of the ceramic substrate 2 may be the same as or different from those of the metal plate 4. The same length and width dimensions of the ceramic substrate 2 and the metal plate 4 mean that the difference between the length of the ceramic substrate 2 and the length of the metal plate 4 is within ±2 mm. Making the length and width dimensions of the ceramic substrate 2 the same as those of the metal plate 4 improves the freedom of pattern formation during the etching process. Furthermore, when metal plates 4 are provided on both sides of the ceramic substrate 2, making the length and width dimensions of the ceramic substrate 2 the same as those of the metal plate 4 helps suppress warping of the bonded structure. Additionally, making the length and width dimensions of the ceramic substrate 2 the same as those of the metal plate 4 increases the freedom of circuit pattern design during the etching process. Furthermore, if the length and width dimensions of the ceramic substrate 2 and the metal plate 4 are different, it is preferable to make the length and width dimensions of the front metal plate the same as those of the back metal plate. This also helps to suppress the occurrence of warping. The metal plate 4 may be pre-processed into a pattern shape before being placed on the ceramic substrate 2. By using a metal plate that has been pre-processed into a pattern shape, the etching process can be omitted. The bonded body may be used for multi-cavity production. Multi-cavity production is a method of dividing the bonded body into multiple parts to obtain smaller bonded bodies. For example, a bonded body to which a circuit shape has been applied by etching can be divided to obtain multiple ceramic circuit boards. With the manufacturing method of the bonded body according to this embodiment, even if the long side of the ceramic substrate is made large, such as 100 mm or more, the amount of warping can be suppressed. Therefore, a bonded body suitable for multi-cavity production can be manufactured. Bonded bodies with a large amount of warping require a warp correction process. By reducing the amount of warping, the warp correction process can be made unnecessary.

[0020] Figure 5 shows an example of a ceramic circuit board fabricated by processing a bonded body. In Figure 5, 11 is the circuit section, 12 is the heat sink, and 20 is the ceramic circuit board. The circuit section 11 is formed by adding a circuit structure to the metal plate 4 on the front side. The heat sink 12 is formed by processing the metal plate 4 on the back side. In the example shown in Figure 5, two circuit sections 11 are provided, but the structure of the ceramic circuit board is not limited to this example. The number and shape of the circuit sections 11 are arbitrary. In addition, the metal plates 4 on both sides of the ceramic substrate 2 may be processed into circuit sections 11. Furthermore, a sloping structure may be provided on the sides of the circuit section 11 and the heat sink 12. A brazing material layer overhang may be provided where the brazing material layer 3 protrudes from the edge of the circuit section 11 or the heat sink 12.

[0021] It is preferable to use an active metal brazing material for the brazing layer 3. The joining method using an active metal brazing material is called the active metal joining method. When the metal plate is a copper plate, the active metal is titanium (Ti). An active metal brazing material is a brazing material that contains Ti. Ti can react with the ceramic substrate to improve the bonding strength. If the ceramic substrate is a nitride-based ceramic substrate, titanium nitride is formed as the reaction layer. If the ceramic substrate is an oxide-based ceramic substrate, titanium oxide is formed as the reaction layer. The brazing material preferably contains one or more components selected from Ag (silver), Cu (copper), Sn (tin), In (indium), and C (carbon) as components other than the active metal. Ag or Cu is the base material component of the brazing material. Sn or In has the effect of lowering the melting point of the brazing material. C has the effect of controlling the fluidity of the brazing material or controlling the structure of the bonded layer by reacting with other components. For this reason, examples of brazing material components include Ag-Cu-Ti, Ag-Cu-Sn-Ti, Ag-Cu-Ti-C, Ag-Cu-Sn-Ti-C, Ag-Ti, Cu-Ti, Ag-Sn-Ti, Cu-Sn-Ti, Ag-Ti-C, Cu-Ti-C, Ag-Sn-Ti-C, and Cu-Sn-Ti-C. In may be used instead of Sn. Both Sn and In may be used. Instead of Sn or In, low-melting-point metals such as Bi (bismuth), Sb (antimony), or Ga (gallium) may be used.

[0022] The brazing material composition preferably contains 0% to 70% by mass of Ag (silver), 15% to 85% by mass of Cu (copper), and 1% to 15% by mass of Ti (titanium) or TiH2 (titanium hydride). When both Ti and TiH2 are used, the total amount should be within the range of 1% to 15% by mass. When both Ag and Cu are used, it is preferable that Ag be 20 to 60% by mass and Cu be 15 to 40% by mass. With these brazing material compositions, the bonding temperature can be controlled within the range of 700°C to 950°C. The brazing material composition may, if necessary, contain 1% to 50% by mass of one or both of Sn (tin) or In (indium). Furthermore, if necessary, the brazing material composition may also contain 0.1% to 2% by mass of C (carbon). Furthermore, when the metal plate is an aluminum plate, the active metal is silicon (Si). The brazing material component other than Si is aluminum. In other words, the active metal brazing material used when joining aluminum plates is an Al-Si brazing material. The Al-Si brazing material preferably contains Si in the range of 0.1% to 30% by mass. In addition, it may also contain magnesium in the range of 0.01% to 10% by mass in addition to Al and Si. With these brazing material compositions, the joining temperature can be controlled within the range of 600°C to 950°C. The composition ratio of the brazing material is calculated by considering the total value of the mixed raw materials as 100% by mass. For example, if it is composed of three materials, Ag, Cu, and Ti, then Ag + Cu + Ti = 100% by mass. If it is composed of four materials, Ag, Cu, TiH2, and In, then Ag + Cu + TiH2 + In = 100% by mass. If it is composed of five materials, Ag, Cu, Ti, Sn, and C, then Ag + Cu + Ti + Sn + C = 100% by mass. If it is composed of two materials, Al and Si, then Al + Si = 100% by mass.

[0023] The melting point of the brazing material is preferably lower than the bonding temperature. Furthermore, the melting point of the brazing material is preferably 700°C or lower. By lowering the melting point of the brazing material, the metal plate and ceramic substrate can be bonded even if the heating and cooling rates are increased. A faster heating rate means a faster temperature rise from room temperature to the bonding temperature. Lowering the melting point of the brazing material allows the brazing material to melt during the temperature rise process. This allows bonding to begin during the heating process. While there is no particular lower limit to the melting point of the brazing material, it is preferably 530°C or higher. If the melting point of the brazing material is below 530°C, the TCT characteristics may deteriorate. In recent years, with the increasing performance of semiconductor devices, junction temperatures have risen to around 170°C. Further improvements in performance are expected to raise the junction temperature to 250°C. If the melting point of the brazing material is low, the brazing layer may melt at the junction temperature. Therefore, it is preferable that the melting point of the brazing material be within the range of 530°C to 700°C, and more preferably within the range of 530°C to 590°C.

[0024] The melting point of a brazing material can be determined by examining its DSC curve. A DSC curve is a measurement of endothermic and exothermic reactions using a differential scanning calorimeter (DSC). Peaks in the negative direction indicate endothermic reactions, while peaks in the positive direction indicate exothermic reactions. Furthermore, the DSC curve will be measured using a temperature profile consisting of a heating process, a holding process at a constant temperature, and a cooling process. The temperature profile will consist of the heating process, where the temperature is raised from room temperature to 500°C at a heating rate of 5°C / min. Next, the temperature will be held at 500°C for 60 minutes. Then, the temperature will be raised to 845°C at a heating rate of 5°C / min. Finally, the temperature will be held at 845°C for 30 minutes. The cooling process will be the process of lowering the temperature from 845°C to room temperature at a cooling rate of 5°C / min. Furthermore, the DSC measurement device shall be a NETZSCH TGA-DSC simultaneous thermal analyzer STA449-F3-Jupiter or a device with equivalent performance. The measurement shall be performed in an Ar (argon) flow by dropping an appropriate amount of brazing material into an alumina container. It is necessary to prevent the brazing material from reacting with the atmosphere by performing the measurement in an Ar atmosphere.

[0025] The melting point is defined as the temperature at which the largest endothermic peak in the DSC curve is detected within the temperature range of 530°C to 900°C during the heating process. If the melting point of the brazing material is 700°C or lower, it means that the largest endothermic peak will be within the range of 530 to 700°C. If the melting point exceeds 700°C, the largest endothermic peak will be detected above 700°C, at 900°C. Note that even if there is a negative peak below 550°C, it does not need to be counted as an endothermic peak. Endothermic reactions are caused by the melting and decomposition of the active metal brazing material. For example, if titanium hydride (TiH2) is used as the active metal, a negative peak will be detected around 500°C. This peak is the peak when TiH2 decomposes into Ti and H. Furthermore, to lower the melting point of the brazing material, it is effective to keep the mass ratio of Ag to Cu in the brazing material, Ag / Cu, within the range of 0 to 1.3. Most preferably, the composition does not contain Ag (mass ratio Ag / Cu = 0). "Does not contain Ag" means that the Ag content is 0.01% by mass or less (including zero). If the Ag content is 0.01% by mass or less, the mass ratio Ag / Cu can be considered zero. It is also preferable to add one or two selected from Sn or In to the brazing material. It is also effective to make the particle size of Sn or In the largest among the components contained in the brazing material. For example, in a brazing material made of Cu, Sn, and Ti, the particle size of Sn should be made the largest. Also, in a brazing material made of Ag, Cu, Sn, TiH2, and C, the particle size of Sn should be made the largest. The average particle size of the materials constituting the brazing material is preferably within the range of 0.5 μm to 15 μm. Controlling the particle size of the Sn powder or In powder within this range is effective. Among the materials constituting the brazing material, the Sn powder or In powder has a low melting point. The presence of other materials around the low-melting-point material allows the melting reaction to occur smoothly even when the heating rate is increased.

[0026] After mixing the individual material powders that make up the activated metal brazing material, an activated metal brazing paste is prepared. By adding a solvent, binder, etc., to the mixed powder, the activated metal brazing paste is obtained. By using a paste, the application area and thickness of the brazing layer can be adjusted. Furthermore, the thickness of the activated metal brazing layer is preferably within the range of 10 μm to 60 μm. The paste is applied so that the thickness of the brazing layer after heat bonding falls within the above range. An activated metal brazing paste is applied to the ceramic substrate 2, and the copper plate 4 is placed on top. Alternatively, the activated metal brazing paste may be applied to the copper plate 4, and the ceramic substrate 2 may be placed on top of it. Alternatively, the activated metal brazing paste may be applied to both sides of the ceramic substrate 2, and the copper plate 4 may be placed on each side. After the laminate is fabricated, the manufacturing method using the continuous furnace described above is applied.

[0027] (Examples 1-5, Comparative Examples 1-2, Reference Example 1) As ceramic substrates, silicon nitride substrates, aluminum nitride substrates, and aluminum oxide substrates were prepared. The silicon nitride substrate has a thermal conductivity of 90 W / m·K and a three-point bending strength of 650 MPa. The aluminum nitride substrate has a thermal conductivity of 170 W / m·K and a three-point bending strength of 400 MPa. The aluminum oxide substrate has a thermal conductivity of 20 W / m·K and a three-point bending strength of 430 MPa. The length, width, and thickness of each substrate are shown in Table 1.

[0028] [Table 1]

[0029] Next, the brazing layers shown in Table 2 were prepared. The brazing layers are active metal brazing materials containing Ti. The average particle size of the materials constituting the brazing material is in the range of 0.5 μm to 15 μm. In brazing materials 1 to 4, the particle size of Sn powder is the largest. In brazing material 5, the particle size of Cu powder is the largest.

[0030] [Table 2]

[0031] Next, copper and aluminum plates were prepared. For the copper plate, an oxygen-free copper plate made of pure copper was used. The thicknesses of the copper and aluminum plates are shown in Table 3.

[0032] [Table 3]

[0033] Next, the activated metal brazing material was prepared into a paste. Then, a laminate with a five-layer structure consisting of a copper plate, brazing material layer, ceramic substrate, brazing material layer, and copper plate was fabricated. The dimensions of the copper plates on the front and back sides, as well as the aluminum plates on the front and back sides, were 2 mm smaller than the dimensions of the ceramic substrate. After printing the activated metal brazing paste, it was dried in an air atmosphere at 100°C for 20 minutes. The thickness of the brazing layer after drying was in the range of 10 μm to 60 μm. The structure of the laminate is shown in Table 4.

[0034] [Table 4]

[0035] A bonding process was performed on each laminate using a continuous furnace. The bonding conditions are as shown in Table 5. A belt conveyor type continuous furnace was used. The holding time in the heating bonding process is the time during which the laminate was held within a range of ±10°C of the bonding temperature. "Initial processing zone temperature" indicates the temperature at which the laminate is heated in the first processing zone of the heating process. The heating, heat bonding, and cooling processes were all carried out in a nitrogen atmosphere. The nitrogen atmosphere was defined as an atmosphere with a nitrogen gas content between 98% and 100% by volume. The nitrogen gas was supplied through an inlet pipe and discharged through an exhaust pipe. The inlet pipe was located in front of the laminate in the direction of travel. The continuous furnace is divided into multiple processing zones, where heating, heat bonding, and cooling processes are performed. In the heating process, the laminate is heated to the temperatures shown in Table 5 in the processing zone where the laminate is heated first. Furthermore, in Comparative Example 1, the bonding temperature is outside the range of 600°C to 950°C. In Comparative Example 2, the average heating rate and average cooling rate are less than 15°C / min. Also, the bonding temperature is outside the range of 600°C to 950°C. Reference Example 1 is an example in which the average heating rate and average cooling rate are set to less than 15°C / min in Example 3.

[0036] [Table 5]

[0037] Joints were manufactured using the method described above. 100 joints were produced for each method. First, the warpage of the obtained joints was measured. The warpage was measured on the longer side of the ceramic substrate. The proportion of joints with a warpage of "1 mm or less" and "greater than 1 mm but 3 mm or less" was determined. Furthermore, the percentage of joint defects was measured. If voids are present in the brazing material layer, the portion containing the void becomes an unjointed area. Joint defects were determined by acquiring flaw detection images of the joint using an ultrasonic flaw detection device and analyzing the images to find the area percentage of the unjointed area. The ultrasonic flaw detection had a resolution of 0.5 mm. 2 The area ratio of the unjointed portion was defined as the sum of the area ratio of the unjointed portion on the front side and the area ratio of the unjointed portion on the back side. Joints with an unjointed area ratio (%) of 0% to 5% were classified as "good products," and those with an unjointed area ratio (%) exceeding 5% were classified as "defective products." Among the good products, those that met the following two conditions were classified as "best products." The first condition was that the unjointed area ratio (%) was between 0% and 2%. The second condition was that the area of ​​each unjointed section was 3.14 mm². 2 The number of voids exceeding a certain value is between 0 and 2 (inclusive). The results are shown in Table 6.

[0038] [Table 6]

[0039] As can be seen from Table 6, the examples showed good yield of joined bodies. Here, "yield" refers to the percentage of joined bodies with a warp of 1 mm or less and an unjointed area ratio of 3% or less. Mass production can be improved by using a continuous furnace and increasing the heating and cooling rates. In addition, a vacuuming process is not required as with batch furnaces. This also improves mass production. According to the manufacturing method described in the example, it was possible to bond even joints with a long side of 100 mm or more, such as silicon nitride substrate 2 or aluminum nitride substrate 1. Therefore, it is also possible to produce multiple pieces. As shown in Example 2, when the difference between the heating rate and the cooling rate exceeded 20°C / min, the yield decreased slightly. Furthermore, comparing Example 3 with Reference Example 1, it can be seen that joining is possible even when the heating and cooling rates are increased, as in Example 3. This is because a brazing material with a melting point of 700°C or lower is used. It was found that by using an activated metal brazing material with a low melting point, good heat joining can be achieved even with high heating and cooling rates. Furthermore, as shown in Examples 9, 10, and 14, the warping of bonded bodies using ceramic substrates with a three-point bending strength of 500 MPa or less tended to increase. From this point of view, it is preferable to use silicon nitride substrates with high three-point bending strength for the bonded bodies. Furthermore, a ceramic circuit board was manufactured by etching the metal component of the bonded structure. When TCT (thermal cycle resistance) tests were conducted at low temperatures of -40°C and high temperatures of 175°C, the board demonstrated excellent durability. The ceramic circuit board using the bonded structure according to this example exhibited excellent TCT characteristics.

[0040] Although several embodiments of the present invention have been illustrated above, these embodiments are presented as examples only and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. Modifications of these embodiments are included in the scope and spirit of the invention, as well as in the claims of the invention and its equivalents. Furthermore, the embodiments described above can be implemented in combination with each other. [Explanation of symbols]

[0041] 1, 1-1, 1-2…zygote 2…Ceramic substrate 3…Waxing layer 4...Metal plate 5…Laminate 6... Belt conveyor 7…Introduction pipe 8… Exhaust pipe 10...Continuous Furnace

Claims

1. A method for manufacturing a bonded body, which involves processing a laminate including a metal member, a ceramic member, and a brazing material layer provided between them, while transporting it using a continuous furnace, A step of heating the laminate in an inert atmosphere, such that the average heating rate of the laminate from 200°C to the bonding temperature is within the range of 15°C / min to 100°C / min, A step of joining the laminate in an inert atmosphere at the bonding temperature within the range of 600°C to 950°C, A step of cooling the laminate from the bonding temperature down to 200°C, with the average cooling rate of the laminate being within the range of 15°C / min to 100°C / min, Equipped with, The brazing layer does not contain Ag. Copper in an amount of 15% by mass or more and 85% by mass or less, Titanium in an amount of 1% by mass or more and 15% by mass or less, One or two types selected from tin and indium in an amount of 1% by mass or more and 50% by mass or less, Impurities and It consists of, A method for manufacturing a joined body, characterized in that the melting point of the brazing material layer is 530°C or higher and 700°C or lower.

2. The method for manufacturing a bonded body according to claim 1, characterized in that the average heating rate is within the range of 20°C / min or more and 100°C / min or less.

3. A method for manufacturing a bonded body according to any one of claims 1 to 2, characterized in that the average cooling rate is within the range of 20°C / min or more and 100°C / min or less.

4. A method for manufacturing a joined body according to any one of claims 1 to 2, characterized in that the inert atmosphere in the heating step and the inert atmosphere in the joining step are nitrogen atmospheres.

5. The method for manufacturing a joined body according to any one of claims 1 to 2, characterized in that the inert atmosphere in the heating step and the inert atmosphere in the joining step are nitrogen atmospheres with a nitrogen concentration in the range of 90% by volume or more and 100% by volume or less.

6. A method for manufacturing a bonded body according to any one of claims 1 to 2, characterized in that the average conveying speed of the laminated body is 1 cm / min or more.

7. The continuous furnace has multiple processing zones, A method for manufacturing a bonded body according to any one of claims 1 to 2, characterized in that, in the processing zone in which the laminate is first heated, the temperature of the laminate is within the range of 150°C to 400°C.

8. The laminate includes a plurality of metal members and a plurality of brazing material layers provided between the ceramic member and the plurality of metal members, Each of the aforementioned multiple metal members is a metal plate, The method for manufacturing a bonded body according to any one of claims 1 to 2, characterized in that the ceramic member is a ceramic substrate.

9. The method for manufacturing a joined body according to any one of claims 1 to 2, characterized in that the metal member is a copper plate.

10. A method for manufacturing a bonded body according to any one of claims 1 to 2, characterized in that the ceramic member is a silicon nitride substrate.

11. A method for manufacturing a ceramic circuit board, characterized by comprising a step of imparting a circuit shape to a bonded body obtained by the method for manufacturing a bonded body according to any one of claims 1 to 2.

12. The method for manufacturing a ceramic circuit board according to claim 11, characterized in that the circuit shape is imparted by etching.

13. The average cooling rate is within the range of 20°C / min to 100°C / min. The inert atmosphere in the heating step and the inert atmosphere in the joining step are nitrogen atmospheres with a nitrogen concentration in the range of 90% by volume or more and 100% by volume or less. A method for manufacturing a bonded body according to any one of claims 1 to 2, characterized in that the average conveying speed of the laminated body is 1 cm / min or more.

14. The continuous furnace has multiple processing zones, The method for manufacturing a bonded body according to claim 13, characterized in that, in the processing zone in which the laminate is first heated, the temperature of the laminate is within the range of 150°C to 400°C.

15. The method for manufacturing a bonded body according to claim 13, characterized in that the brazing layer contains 0.1% by mass or more and 2% by mass or less of carbon.

16. The laminate includes a plurality of metal members and a plurality of brazing material layers provided between the ceramic member and the plurality of metal members, Each of the aforementioned multiple metal members is a copper plate. The method for manufacturing a bonded body according to claim 14, characterized in that the ceramic member is a silicon nitride substrate.

17. The method for manufacturing a bonded body according to claim 13, characterized in that the brazing layer contains 0.1% by mass or more and 2% by mass or less of carbon.

18. The laminate includes a plurality of metal members and a plurality of brazing material layers provided between the ceramic member and the plurality of metal members, Each of the aforementioned multiple metal members is a copper plate. The method for manufacturing a bonded body according to claim 14, characterized in that the ceramic member is a silicon nitride substrate.

19. A method for manufacturing a ceramic circuit board, characterized by comprising a step of imparting a circuit shape to a bonded body obtained by the method for manufacturing a bonded body described in claim 16.

20. A method for manufacturing a ceramic circuit board, characterized by comprising a step of imparting a circuit shape to a bonded body obtained by the method for manufacturing a bonded body described in claim 18.

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