Linear alignment for PCB processing tools

Abstract

A substrate processing system includes a vacuum transfer module and a plurality of process modules defining respective processing chambers. The plurality of process modules includes a first row of process modules disposed on a first side of the vacuum transfer module and a second row of process modules disposed on a second side of the vacuum transfer module opposite the first side. Each of the plurality of process modules includes a gas box disposed above the process module and configured to selectively supply at least one gas and / or gas mixture to the processing chamber of the process module, and an RF generator configured to generate radio frequency (RF) power to generate a plasma in the processing chamber. The RF generator is disposed above the process module, and the gas box and RF generator are disposed side by side above the process module.

Description

Technical Field

[0001] <Cross - Reference to Related Applications> This application claims the benefit of U.S. Provisional Application No. 62 / 983,829, filed Mar. 2, 2020. The entire disclosure of the above - referenced application is incorporated herein by reference.

[0002] This disclosure relates to the architecture of substrate processing tools, and more particularly, to a linear arrangement for substrate processing tools.

Background Art

[0003] The background description provided here is for the purpose of generally presenting the content of the present disclosure. Within the scope described in this background art section, the research by the inventors named at the present time, as well as aspects of the description that cannot be separately regarded as prior art at the time of filing, are not admitted as prior art against the present disclosure, whether explicitly or implicitly.

[0004] A substrate processing system can be used to perform deposition, etching, and / or other processing of substrates such as semiconductor wafers. During processing, the substrate is placed on a substrate support within a processing chamber of the substrate processing system. A gas mixture containing one or more precursors can be introduced into the processing chamber, and plasma can be struck to activate a chemical reaction.

[0005] A substrate processing system can include a plurality of substrate processing tools disposed within a fabrication room. Each of the substrate processing tools can include a plurality of process modules or chambers. The substrate is transferred to the substrate processing tool through one or more intermediate chambers such as a front - opening unified pod (FOUP), an equipment front - end module (EFEM), and / or a load - lock. The substrate is transferred between process modules within a vacuum transfer module (VTM).

Summary of the Invention

[0006] The substrate processing system includes a vacuum transfer module and a plurality of process modules defining their respective processing chambers. The plurality of process modules includes a first row of process modules located on a first side of the vacuum transfer module and a second row of process modules located on a second side of the vacuum transfer module opposite the first side. Each of the plurality of process modules includes a gas box located on top of the process module and configured to selectively supply at least one gas and / or gas mixture to the processing chamber of the process module, as well as an RF generator configured to generate radio frequency (RF) power to generate plasma within the processing chamber. The RF generator is located on top of the process module, and the gas box and RF generator are located side by side on top of the process module.

[0007] In other features, the substrate processing system has a linear axis, and the first and second rows of process modules are parallel to the linear axis and positioned on both sides of the linear axis, with the gas box positioned inside the RF generator relative to the linear axis of the substrate processing system. The RF generator is positioned inside the gas box relative to the linear axis of the substrate processing system. The process modules have a vertical column footprint defined by the outer perimeter of the process modules, and the outer perimeters of the gas box and RF generator do not exceed the vertical column footprint of the process modules.

[0008] In other features, the first column of the process module is configured to perform a first process, and the second column of the process module is configured to perform a second process. The first process is a dielectric etching process, and the second process is a conductive etching process. The first column of the process module is configured to perform the first process independently of the second column of the process module that performs the second process.

[0009] In other features, the substrate processing system further includes a power distribution assembly configured to supply power to a first row and a second row of the process module. The power distribution assembly is configured to supply power to the first row of the process module independently of the power supply to the second row of the process module. The power distribution assembly is located on the third side of the vacuum transfer module between the first and second sides. The substrate processing system further includes a lockout / tagout (LOTO) assembly located on the third side of the vacuum transfer module. The substrate processing system further includes an equipment front-end module (EFEM) located on the fourth side of the vacuum transfer module opposite to the third side.

[0010] In other features, the substrate processing system further includes a first facility gas interface box configured to distribute gas to a first row of process modules, and a second facility gas interface box configured to distribute gas to a second row of process modules. The first facility gas interface box is configured to distribute gas to the first row of process modules independently of the second facility gas interface box that distributes gas to the second row of process modules.

[0011] In other features, the first row of process modules includes five process modules, and the second row of process modules includes five process modules. Each of the first and second rows includes two hoists configured to raise and lower the top plates of at least three process modules. Each of the two hoists is configured to raise and lower the top plate of the central process module among the five process modules. Each process module includes a slide and pivot assembly configured to rotate the bias assembly of the process module away from the processing chamber.

[0012] The substrate processing system includes a process module that defines a processing chamber. The process module is configured to perform at least one process on a substrate placed within the processing chamber. A gas box is configured to selectively supply at least one gas and / or gas mixture to the processing chamber of the process module. The gas box is located above the process module. A radio frequency (RF) generator is configured to generate RF power to create plasma within the processing chamber. The RF generator is located above the process module.

[0013] In other features, the gas box and RF generator are positioned side-by-side on top of the process module. The gas box is positioned inside the RF generator with respect to the linear axis of the substrate processing system. The RF generator is positioned inside the gas box with respect to the linear axis of the substrate processing system. The gas box is positioned above the RF generator. The RF generator is positioned above the gas box. The process module has a vertical column footprint defined by the outer perimeter of the process module, and the outer perimeters of the gas box and RF generator do not exceed the vertical column footprint of the process module.

[0014] In other features, the substrate processing system further includes a plurality of linearly arranged process modules. The plurality of process modules includes a first column of process modules and a second column of process modules. The first column of process modules is configured to perform a first process, and the second column of process modules is configured to perform a second process. The first process is a dielectric etching process, and the second process is a conductive etching process. The first column of process modules is configured to perform the first process independently of the second column of process modules that performs the second process.

[0015] In other features, the substrate processing system further includes a power distribution assembly configured to supply power to a first row of process modules and a second row of process modules. The power distribution assembly is configured to supply power to the first row of process modules independently of the power supply to the second row of process modules. The first row of process modules is located on a first side of the substrate processing system, the second row of process modules is located on a second side of the substrate processing system opposite to the first side, and the power distribution assembly is located on a third side of the substrate processing system between the first and second sides.

[0016] In other features, the substrate processing system further includes a lockout / tagout (LOTO) assembly located on a third side of the substrate processing system. The substrate processing system further includes an equipment front-end module (EFEM) located on a fourth side of the substrate processing system opposite to the third side. The substrate processing system further includes a first equipment gas interface box configured to distribute gas to a first row of the process module, and a second equipment gas interface box configured to distribute gas to a second row of the process module. The first equipment gas interface box is configured to distribute gas to the first row of the process module independently of the second equipment gas interface box which distributes gas to the second row of the process module.

[0017] In other features, the first row of process modules includes five process modules, and the second row of process modules includes five process modules. Each of the first and second rows includes two hoists configured to raise and lower the top plates of at least three process modules. Each of the two hoists is configured to raise and lower the top plate of the central process module among the five process modules. The process modules include slide and pivot assemblies configured to rotate the bias assembly of the process module away from the processing chamber.

[0018] Other fields to which the present disclosure is applicable will become apparent from the detailed description, the claims, and the drawings. The detailed description and the specific examples are for purposes of illustration only and are not intended to limit the scope of the present disclosure.

Brief Description of the Drawings

[0019] The present disclosure will be more fully understood from the detailed description and the accompanying drawings.

[0020] [Figure 1] FIG. 1 is a diagram showing an exemplary substrate processing tool.

[0021] [Figure 2A] FIG. 2A is a plan view of an exemplary substrate processing tool according to the present disclosure.

[0022] [Figure 2B] FIG. 2B is an exemplary end view of the substrate processing tool of FIG. 2A according to the present disclosure.

[0023] [Figure 3A] FIG. 3A is a side view of an exemplary substrate processing tool according to the present disclosure.

[0024] [Figure 3B] FIG. 3B is a perspective view of a portion of two exemplary substrate processing tools according to the present disclosure.

[0025] [Figure 3C] FIG. 3C is a diagram showing an exemplary radio frequency generator module and a gas box disposed within the footprint of a process module according to the present disclosure. [Figure 3D] FIG. 3D is a diagram showing an exemplary radio frequency generator module and a gas box disposed within the footprint of a process module according to the present disclosure.

[0026] [Figure 3E]Figure 3E shows a process module including the fully docked slide and pivot assembly according to the present disclosure.

[0027] [Figure 3F] Figure 3F shows the slide and pivot assembly of Figure 3E in a fully undocked (or fully rotated) state as described herein.

[0028] [Figure 4A] Figure 4A is an isometric rear view of an exemplary substrate processing tool according to the present disclosure. [Figure 4B] Figure 4B is an isometric rear view of an exemplary substrate processing tool according to the present disclosure.

[0029] [Figure 5] Figure 5 is an exploded view of an exemplary substrate processing tool frame assembly according to the present disclosure.

[0030] In these drawings, reference numbers may be reused to refer to similar and / or identical elements. [Modes for carrying out the invention]

[0031] The number of PCB processing tools in a fabrication chamber may be constrained by the dimensions and configuration of each tool. Tool density refers to the number of PCB processing tools and / or process modules per unit area of ​​the fabrication chamber. The configuration of the PCB processing tools defines the tool footprint, spacing, and / or pitch that define the tool density of the fabrication chamber. Systems and methods based on the principles of this disclosure provide PCB processing tool configurations that maximize the density and accessibility of PCB processing tools.

[0032] Referring here to Figure 1, an exemplary top view of a substrate processing tool 100 is shown. The substrate processing tool 100 includes a plurality of process modules 104. In just one example, each of the process modules 104 may be configured to perform one or more of their respective processes on a substrate. The substrate to be processed is loaded into the substrate processing tool 100 via a port on a loading station of an air-to-vacuum (ATV) transfer module, such as an equipment front-end module (EFEM) 108, and then transferred to one or more of the process modules 104. For example, a transfer robot 112 is positioned to transfer the substrate from the loading station 116 to an airlock or load lock 120, and a robot 124 of a vacuum transfer module 128 is positioned to transfer the substrate from the load lock 120 to various process modules 104.

[0033] In the example shown in Figure 1, the substrate processing tools 100 have a circular arrangement. Therefore, the process modules 104 are arranged azimuthally around the VTM 128. The number of substrate processing tools 100 within the fabrication chamber and their respective positions may be limited by the circular arrangement shown in Figure 1. The fabrication chamber may include multiple substrate processing tools 100 arranged in parallel rows and columns, or in a zigzag or offset arrangement. Furthermore, the number of process modules 104 per substrate processing tool 100, and the accessibility of the components of the substrate processing tool 100 containing the process modules 104 (e.g., for service, repair, replacement, etc.) may be limited by this configuration.

[0034] Figure 2A shows a plan view of an exemplary configuration of a substrate processing tool 200 according to the principles of this disclosure. Each of the processing tools 200 includes a loading station 204, an equipment front-end module (EFEM) 208, a load lock 212, and a vacuum transport module (VTM) 216 arranged in a linear configuration. In just one example, the loading station 204 may correspond to a front-opening unified pod (FOUP). In some examples, the load lock 212 may be fully or partially integrated within the EFEM 208. In other examples, the load lock 212 is located adjacent to the outside of the EFEM 208. An exemplary linear configuration including a load lock 212 located at least partially within the EFEM 208 is described in Patent Cooperation Treaty Application No. PCT / US2018 / 022397, filed on 14 March 2018, the entire contents of which are incorporated herein by reference.

[0035] Tool 200 includes 2N process modules 220 arranged linearly in two parallel columns adjacent to and offset from VTM 216, where N is an integer. In Figure 2A, N=5, but other configurations of tool 200 may include process modules 220 with N=1 to 4 or N=5. For example, the length of VTM 216 may be extended or shortened to accommodate an additional or fewer number of process modules 220, respectively. Process modules 220 may include substrate processing chambers configured to perform etching on a substrate, such as dielectric etching (e.g., inductively coupled plasma (ICP) etching), capacitive etching (e.g., capacitively coupled plasma (CCP) etching), and / or other substrate processing. In some examples, each column of process modules 220 may be configured to operate asymmetrically. In other words, a process module 220 in one column may be configured to operate independently of process modules 220 in the other column and / or independently of other process modules 220 in the same column.

[0036] Similarly, the VTM216 may include one or more robots 224 having various configurations. For example, the tool 200 includes M robots 224 aligned with the central longitudinal axis (i.e., centerline) of the VTM216, where M is an integer. For example, as shown, M=2, but more or fewer robots 224 may be used. In other examples, one or more robots 224 may be positioned offset from the centerline of the VTM216 (i.e., shifted to the right and / or left toward the process module 220 on one or both sides). In other words, the main pivot axis of a robot 224 may be offset from the center.

[0037] For example, as shown in the end view of the substrate processing tool 200 in Figure 2B, the service tunnel 226 can be defined below the VTM 216. A portion 228 of the robot 224, including the associated circuitry and mechanical components (e.g., motor, power supply, etc.), extends downward from the robot 224 into the service tunnel 226 at a location aligned with the robot 224's pivot axis. When the robot 224 is aligned with the centerline of the VTM 216, the downward-extending portion 228 restricts access to the service tunnel 226. Conversely, in the example shown in Figure 2B, the robot 224 is shifted to the side of the VTM 216 (i.e., offset from the centerline of the VTM 216) to facilitate access to the service tunnel 226.

[0038] Although shown having one arm 230, each robot 224 may have a configuration including one, two, or more of the arms 230. In some examples, the robot 224 may include one or two end effectors 232 for each of the arms 230.

[0039] The substrate processing tool 200 may include one or more storage buffers 236. The storage buffers 236 are configured to store one or more substrates during processing stages, before or after processing, and / or to store the edge rings, covers, and other components of the process module 220. As shown, one or more strip modules 238 may be located at the end of the VTM 216 opposite the loading station 204. In other examples, one or more of the storage buffers 236, additional process modules, post-processing modules, and / or other components may be located at the end of the VTM 216 opposite the loading station 204. In some examples, the EFEM 208, load lock 212, VTM 216, and one or more of the process modules 220 may have a vertically stacked configuration. For example, each process module 220 can correspond to two process modules 220 in a vertically stacked configuration (i.e., one process module 220 is positioned above / below the other), each VTM 216 can correspond to two VTM 216 in a vertically stacked configuration, each load lock 212 can correspond to two load locks 212 in a vertically stacked configuration, and each loading station 204 can correspond to two loading stations 204 in a vertically stacked configuration.

[0040] Each process module 220 includes, but is not limited to, a radio frequency (RF) generator, as well as associated internal and external components (not shown), including power supply circuits and gas supply system components. For example, each process module 220 includes an RF generator 240 and a gas box 244 (including, for example, one or more components such as manifolds, valves, and flow controllers). In the substrate processing tool 200 according to this disclosure, the RF generator 240 and the gas box 244 are located on top of the process module 220. As shown in Figure 2A, the RF generator 240 and the gas box 244 are located side by side on top of the process module 220. In some examples, the RF generator 240 is located closer to the VTM 216 than the gas box 244 (i.e., inside the gas box 244 relative to the service tunnel 226), and the gas box 244 is located outside the RF generator 240. In other examples, the gas box 244 is located closer to the VTM 216 than the RF generator 240 (i.e., inside the RF generator 240 relative to the service tunnel 226), and the RF generator 240 is located outside the gas box 244. In other examples, the RF generator 240 and the gas box 244 may be arranged in a stacked configuration on top of the process module 220 (i.e., one on top of the other). In other examples, one of the RF generator 240 and the gas box 244 may be located above the process module 220, and the other of the RF generator 240 and the gas box 244 may be located below the process module 220.

[0041] In some examples of the above configuration, each of the RF generator 240 and the gas box 244 may be located within the footprint of the process module 220 (e.g., the vertical column footprint). In other words, in these examples, the perimeters of the RF generator 240 and the gas box 244 do not extend beyond the perimeter of the process module 220. In other examples, one or both of the RF generator 240 and the gas box 244 may extend beyond the footprint of the process module 220.

[0042] For example, tool 200 includes M robots 224 aligned with the central vertical axis (i.e., centerline) of VTM216, where M is an integer. For example, as shown, M=2, but more or fewer robots 224 may be used. In other examples, one or more robots 224 may be positioned offset from the centerline of VTM216 (i.e., shifted to the right and / or left toward the process module 220 on one or both sides).

[0043] Figures 3A and 3B show side and isometric views, respectively, of a substrate processing tool 300, which comprises process modules 304 arranged in two parallel rows (e.g., parallel rows on the same plane) and two portions of the substrate processing tool 300 arranged side-by-side in a single Fab Lab (one solid line and the other dashed line in Figure 3B). In the diagrams of Figures 3A and 3B, only one row of process modules 304 (e.g., the front row) is shown, and the back row is not visible.

[0044] The process module 304, collectively referred to as process module 304, includes a first process module 304-1, a second process module 304-2, a third process module 304-3, a fourth process module 304-4, and a fifth process module 304-5. Each of the process modules 304 includes its respective lower section (e.g., surrounding the processing volume) 308, a top plate 312, a cover 316 for the top plate 312, and a connection assembly 320 located on the top plate 312. For example, the assembly 320 includes fluid and electrical connections. Collectively, the top plate 312 and the assembly 320 can be referred to as the top plate assembly. An RF generator 324 and a gas box 326 are located on each of the process modules 304 and supply RF power and process gas to the process module 304.

[0045] Each of the process modules 304, individually or in combination, can be referred to as a substrate processing system. Each of the process modules 304 can be used, for example, to etch a substrate using radio frequency (RF) plasma. Each process module 304 includes a processing chamber, such as an inductively coupled plasma (ICP) chamber or a capacitively coupled plasma (CCP) chamber. The station can perform, for example, conductive etching, dielectric etching, and / or other substrate processing. In some examples, one column of process modules 304 may be configured to perform conductive etching, and other columns of process modules 304 may be configured to perform dielectric etching. In other examples, the process modules 304 in each column may be configured to operate under different supply voltages. For example, one process module 304 in a column may be configured to receive a relatively low voltage (e.g., 200-300 volts), and other process modules 304 in a column may be configured to receive a relatively high voltage (e.g., 375-600 volts).

[0046] Each row of the substrate processing tool 300 includes a plurality of hoists 328 (shown in more detail in Figure 5), including, for example, a first hoist 328-1 and a second hoist 328-2. Each of the hoists 328 moves vertically and laterally along its respective track 332. The first hoist 328-1 is configured to raise and lower the top plate assemblies and / or other components of process modules 304-1, 304-2, and 304-3. In other words, each of the hoists 328 is positioned to interact with a pair of process modules 304 at each end of the row, and both hoists 328 are positioned to interact with the central process module 304-3. In this way, the hoist 328 is configured to allow multiple operators (e.g., up to four) using their respective hoists 328 on both rows of the substrate processing tool 300 to simultaneously raise and lower their respective top plate assemblies.

[0047] The substrates to be loaded into (or transported from) the substrate processing tool 300 are stored in the loading station 336. The substrates are loaded into the substrate processing tool 300 via the EFEM and load lock assembly 340, and then transported to the process module 304 via the respective load ports 344 of the VTM 348. The power distribution and lockout / tagout (LOTO) assembly 352 provides power to the various components of the substrate processing tool 300 and provides LOTO functionality.

[0048] As shown in Figure 3B, the space between adjacent substrate processing tools 300 is limited. For example, the width W of the passage between substrate processing tools 300 can be 1030 mm. This provides minimal space to open the processing chamber of the process module 304 and to gain access to the inside of the process module 304 and the corresponding processing chamber.

[0049] Typically, the power distribution and / or LOTO assembly for process module 304 is located adjacent to each of the process modules 304. In other words, the power distribution and LOTO assembly is located on the side of the substrate processing tool 300 facing the passage between adjacent substrate processing tools 300. This arrangement requires a larger clearance space in the passage between adjacent substrate processing tools 300 to accommodate the LOTO assembly and associated protocols. As shown in Figures 3A and 3B, the power distribution and LOTO assembly 352 according to this disclosure is located at the rear end of the substrate processing tool 300 (i.e., the end of the substrate processing tool 300 opposite to the loading station 336).

[0050] Figures 3C and 3D show a top view and an isometric view, respectively, of the RF generator 324 and gas box 326 positioned on the process module 304. In these examples, each of the RF generator 324 and gas box 326 is positioned within the footprint of the process module 304 (e.g., the vertical column footprint). In other words, the perimeters of the RF generator 324 and gas box 326 do not extend beyond the perimeter of the process module 304. In other examples, one or both of the RF generator 324 and gas box 326 may extend beyond the footprint of the process module 304. For example, the gas box 326 may partially extend beyond the footprint of the process module 304, or it may be located entirely inside the process module 304 (i.e., relative to the perimeter of the substrate processing tool 300).

[0051] As shown, the RF generator 324 and the gas box 326 are positioned side by side on the process module 304, with the gas box 326 positioned inside the RF generator 324 (i.e., relative to the outer perimeter of the substrate processing tool 300). In other examples, the RF generator 324 may be positioned inside the gas box 326.

[0052] Typically, accessing the PM304 for service and maintenance can be difficult. For example, it may be difficult to reach above and on the PM304 to access its components (e.g., the top plate 312, cover 316, connection assembly 320, etc.) and / or other components of the substrate processing tool 300 located above and / or behind the PM304. By positioning the RF generator 324 and gas box 326 above the PM304 according to the configuration of this disclosure, the PM304 can be positioned closer to the bottom of the substrate processing tool 300 (e.g., on or directly on the PM frame located on or near the floor of the workshop). Thus, positioning the RF generator 324 and gas box 326 above the PM304 facilitates service and maintenance access.

[0053] Although shown in a configuration aligned on top of the process module 304, in other examples the RF generator 324 and gas box 326 may be arranged in a stacked configuration on or below the process module 304 (i.e., one on top of the other). In other examples one of the RF generator 324 and gas box 326 may be placed on top of the process module 304, and the other of the RF generator 324 and gas box 326 may be placed below the process module 304.

[0054] In some examples, each of the PM304 may include a slide and pivot assembly 360, as shown in Figures 3E and 3F. The slide and pivot assembly 360 connects to the processing chamber 364 and the process module bias assembly 368. The slide and pivot assembly 360 allows the process module bias assembly 368 to be pulled out away from the processing chamber 364 and swiveled to a predetermined angle (e.g., 115°) relative to the front of the processing chamber 364. Figure 3E shows the slide and pivot assembly 360 in a fully docked state, and Figure 3F shows the slide and pivot assembly 360 in a fully undocked state.

[0055] The process module bias assembly 368 includes circuitry for supplying RF and / or bias power to electrodes of the substrate support and / or power to heater elements of the substrate support, and may also include coolant channels for supplying coolant to cool the substrate support. The slide and pivot assembly 360 is mounted on the wall of the processing chamber 364 and is configured to hold the weight of the process module bias assembly 368. The slide and pivot assembly 360 is configured to provide a repeatable, closed, fully docked position. In this way, the slide and pivot assembly 360 pivots so that the process module bias assembly 368 is pulled out and moved away from the processing chamber 364, allowing service or maintenance to be performed in the passage between the substrate processing tools 300.

[0056] Figures 4A and 4B are isometric rear views of an exemplary substrate processing tool 400 according to the present disclosure. These figures show both rows of process modules 404 on each side of the substrate processing tool 400. A power distribution and lot assembly 408 (including power distribution and lot assembly 408-1 for one row of process modules 404 and power distribution and lot assembly 408-2 for the other row of process modules 404) is located at the rear end of the substrate processing tool 400. Other components, including, but not limited to, one or more strip modules 412, power modules 416 for strip modules 412, etc., may be located at the rear end of the substrate processing tool 400.

[0057] In some examples, the gas distribution to the substrate processing tool 400 may be asymmetrical. For example, gas may be supplied independently to each row of the process module 404. Typically, an equipment gas interface box 420 is provided to distribute the gas to each row of the process module 404. For example, the equipment gas interface box 420 may be located at the rear end of the substrate processing tool 400 on the side corresponding to one of the rows of the process module 404. The substrate processing tool 400 according to this disclosure may include a second equipment gas interface box 424 located on the side corresponding to the other row of the process module 404. Thus, each of the equipment gas interface boxes 420 and 424 is configured to distribute different groups of gas to each row of the process module 404.

[0058] Figure 5 illustrates both an assembled view and an exploded view of an exemplary frame assembly 500 for a substrate processing tool according to the present disclosure. The frame assembly 500 includes various structural components configured to support the VTM, process module, RF generator, gas box, etc., of the substrate processing tool. For example, the VTM frame 504 is configured to support the VTM (e.g., VTM 348) and the upper frame assembly 508. The upper surfaces 512 of the upper frame assembly 508 and the VTM frame 504 can define a tunnel 516. In some examples, the tunnel 516 can provide access space for servicing components of the substrate processing tool.

[0059] The PM frame 520 is positioned below the VTM frame 504. The upper frame assembly 508 supports the gas box frame 524 and the RF support frame 528, which are further supported on the RF support frame post 532. The RF support frame 528 supports a hoist 536 configured to raise and lower the upper plate assembly of the PM, which is positioned within the PM frame 520 as described above.

[0060] The foregoing description is purely illustrative and is not intended to limit the Disclosure, its application, or its use in any way. The broad teachings of this Disclosure can be implemented in various forms. Thus, while this Disclosure includes specific examples, the true scope of this Disclosure should not be limited to such examples, as other modifications will become apparent when considering the drawings, specification, and the claims below. It should be understood that one or more steps in a method may be performed in a different order (or simultaneously) without altering the principles of this Disclosure. Furthermore, while each embodiment is described above as having specific features, it is possible to implement one or more of these features described in relation to any embodiment of this Disclosure in other embodiments and / or combine them with any feature of any other embodiment (even if such combinations are not explicitly described). In other words, the described embodiments are not mutually exclusive, and substituting one or more embodiments with one or more is within the scope of this Disclosure.

[0061] The spatial and functional relationships between elements (e.g., modules, circuit elements, semiconductor layers, etc.) are described using a variety of terms, such as “connected,” “engaged,” “joined,” “adjacent,” “next to,” “above,” “upwards,” “below,” and “positioned.” Furthermore, when a relationship between a first element and a second element is described in the above disclosure, unless it is explicitly described as “direct,” the relationship may be a direct relationship in which no other intervening elements exist between the first and second elements, or it may be an indirect relationship in which one or more intervening elements exist (spatially or functionally) between the first and second elements. As used herein, the expression “at least one of A, B, and C” should be interpreted in the sense of logic (A or B or C) using non-exclusive logic OR, and not in the sense of “at least one of A, at least one of B, and at least one of C.”

[0062] In some embodiments, the controller is part of a system, and such a system may be part of the examples described above. Such a system may comprise semiconductor processing equipment including one or more processing tools, one or more chambers, one or more processing platforms, and / or specific processing components (such as wafer pedestals, gas flow systems, etc.). These systems may be integrated with electronic equipment for controlling system operation before, during, and after processing of semiconductor wafers or substrates. Such electronic equipment may be referred to as a “controller” and may control various components or sub-components of one or more systems. Depending on the processing requirements and / or the type of system, the controller may be programmed to control any of the processes disclosed herein. Such processes include supplying processing gases, setting temperature (e.g., heating and / or cooling), setting pressure, setting vacuum, setting power, setting radio frequency (RF) generator settings, setting RF matching circuit settings, setting frequency, setting flow rate, setting fluid supply, setting position and operation, loading and unloading wafers to and from tools, and loading and unloading wafers to and from other transport tools and / or load locks connected to or interlocked with a particular system.

[0063] In a broad sense, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive and issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. Integrated circuits may include chips in the form of firmware that store program instructions, chips defined as digital signal processors (DSPs), application-specific integrated circuits (ASICs), and / or one or more microprocessors, i.e., microcontrollers that execute program instructions (e.g., software). Program instructions are instructions communicated to the controller in the form of various individual settings (or program files) that may define operating parameters for performing a particular process on or for a semiconductor wafer or for a system. In some embodiments, the operating parameters may be part of a recipe defined by a process engineer to realize one or more processing steps in the fabrication of one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or wafer dies.

[0064] In some embodiments, the controller may be part of a computer integrated with or coupled to the system, or otherwise networked to the system, or coupled to such a computer, or a combination thereof. For example, the controller may be in the “cloud” or may be all or part of the fab host computer system. This enables remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of fabrication operations, review the history of past fabrication operations, review trends or performance criteria from multiple fabrication operations, modify parameters of the current process, set processing steps following the current process, or start a new process. In some examples, a remote computer (e.g., a server) can provide process recipes to the system over a network. Such a network may include a local network or the internet. The remote computer may include a user interface that enables entry or programming of parameters and / or settings, which are then communicated from the remote computer to the system. In some examples, the controller receives instructions in the form of data. Such data identifies parameters for each processing step performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tools to which the controller is configured to interact or control. Therefore, as described above, the controller may be distributed, for example, by comprising one or more separate controllers that are networked together and cooperate toward a common purpose (such as the processes and controls described herein). An example of a distributed controller for such purposes would be one or more integrated circuits on a chamber that communicate with one or more integrated circuits that are remotely located (e.g., at the platform level or as part of a remote computer) and combined to control the processes in the chamber.

[0065] Exemplary systems may include, but are not limited to, plasma etching chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, tracking chambers or modules, and any other semiconductor processing systems that may be used in connection with or for the fabrication and / or manufacture of semiconductor wafers.

[0066] As described above, depending on one or more process steps performed by the tool, the controller may communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools located throughout the factory, a main computer, another controller, or tools used for material handling to load and unload wafer containers to and from tool locations and / or load ports within the semiconductor manufacturing plant. Furthermore, this disclosure can be implemented in the following forms. [Form 1] A substrate processing system, Vacuum transfer module and A plurality of process modules defining each processing chamber, wherein the plurality of process modules include a first row of process modules located on a first side of the vacuum transfer module, and a second row of process modules located on a second side of the vacuum transfer module opposite to the first side, Each of the aforementioned process modules is A gas box configured to selectively supply at least one gas and / or gas mixture to the processing chamber of the process module, wherein the gas box is positioned on the process module, and An RF generator configured to generate radio frequency (RF) power to generate plasma in the processing chamber, wherein the RF generator is located on the process module, and the gas box and the RF generator are located side by side on the process module. A substrate processing system including this. [Form 2] A substrate processing system as described in Embodiment 1, A substrate processing system having a linear axis, wherein the first and second rows of the process modules are parallel to the linear axis and are arranged on both sides of the linear axis, and the gas box is positioned inside the RF generator with respect to the linear axis of the substrate processing system. [Form 3] A substrate processing system as described in Embodiment 1, The RF generator is positioned inside the gas box with respect to the linear axis of the substrate processing system, in a substrate processing system. [Form 4] A substrate processing system as described in Embodiment 1, A substrate processing system wherein the process module has a vertical column footprint defined by the outer periphery of the process module, and the outer peripheries of the gas box and the RF generator do not exceed the vertical column footprint of the process module. [Form 5] A substrate processing system as described in Embodiment 1, A substrate processing system in which the first column of the process module is configured to perform a first process, and the second column of the process module is configured to perform a second process. [Form 6] A substrate processing system as described in Embodiment 5, A substrate processing system in which the first process is a dielectric etching process and the second process is a conductive etching process. [Form 7] A substrate processing system as described in Embodiment 5, A substrate processing system in which the first column of the process module is configured to perform the first process independently of the second column of the process module that performs the second process. [Form 8] A substrate processing system as described in Embodiment 1, A substrate processing system further comprising a power distribution assembly configured to supply power to the first row and the second row of the process module. [Form 9] A substrate processing system as described in Embodiment 8, A substrate processing system in which the power distribution assembly is configured to supply power to the first column of the process module independently of the power supply to the second column of the process module. [Form 10] A substrate processing system as described in Embodiment 8, The power distribution assembly is located on the third side of the vacuum transfer module between the first side and the second side in a substrate processing system. [Form 11] A substrate processing system according to Embodiment 10, A substrate processing system further comprising a lockout / tagout (LOTO) assembly located on the third side of the vacuum transfer module. [Form 12] A substrate processing system as described in Embodiment 11, A substrate processing system further comprising an equipment front-end module (EFEM) located on the fourth side of the vacuum transfer module opposite to the third side. [Form 13] A substrate processing system as described in Embodiment 1, A substrate processing system further comprising: a first equipment gas interface box configured to distribute gas to the first row of the process module; and a second equipment gas interface box configured to distribute gas to the second row of the process module. [Form 14] A substrate processing system as described in Embodiment 13, A substrate processing system in which the first equipment gas interface box is configured to distribute gas to the first row of the process module independently of the second equipment gas interface box which distributes gas to the second row of the process module. [Form 15] A substrate processing system as described in Embodiment 1, A substrate processing system in which the first column of the process module includes five of the process modules, and the second column of the process module includes five of the process modules. [Form 16] A substrate processing system as described in Embodiment 1, A substrate processing system comprising, in each of the first and second columns, two hoists configured to raise and lower the top plates of at least three of the process modules. [Form 17] A substrate processing system as described in Embodiment 16, A substrate processing system in which each of the two hoists is configured to raise and lower the respective top plates of the central process module among the five process modules. [Form 18] A substrate processing system as described in Embodiment 1, A substrate processing system comprising each of the process modules, including a slide and pivot assembly configured to rotate the bias assembly of the process module away from the processing chamber. [Form 19] A substrate processing system, A process module defining a processing chamber, wherein the process module is configured to perform at least one process on a substrate placed within the processing chamber, A gas box configured to selectively supply at least one gas and / or gas mixture to the processing chamber of the process module, wherein the gas box comprises a gas box positioned on the process module, A substrate processing system comprising: an RF generator configured to generate radio frequency (RF) power to generate plasma in the processing chamber, wherein the RF generator is positioned on the process module. [Form 20] A substrate processing system as described in Embodiment 19, The gas box and the RF generator are arranged side-by-side on the process module in a substrate processing system. [Form 21] A substrate processing system according to Embodiment 20, The gas box is positioned inside the RF generator with respect to the linear axis of the substrate processing system, in a substrate processing system. [Form 22] A substrate processing system according to Embodiment 20, The RF generator is positioned inside the gas box with respect to the linear axis of the substrate processing system, in a substrate processing system. [Form 23] A substrate processing system as described in Embodiment 19, The gas box is a substrate processing system positioned above the RF generator. [Form 24] A substrate processing system as described in Embodiment 19, The RF generator is a substrate processing system located on top of the gas box. [Form 25] A substrate processing system as described in Embodiment 19, A substrate processing system wherein the process module has a vertical column footprint defined by the outer periphery of the process module, and the outer peripheries of the gas box and the RF generator do not exceed the vertical column footprint of the process module. [Form 26] A substrate processing system as described in Embodiment 19, A substrate processing system further comprising a plurality of the process modules arranged in a linear configuration. [Form 27] A substrate processing system as described in Embodiment 26, A substrate processing system comprising the plurality of process modules, a first row of the process modules, and a second row of the process modules. [Form 28] A substrate processing system as described in Embodiment 27, A substrate processing system in which the first column of the process module is configured to perform a first process, and the second column of the process module is configured to perform a second process. [Form 29] A substrate processing system as described in Embodiment 28, A substrate processing system in which the first process is a dielectric etching process and the second process is a conductive etching process. [Form 30] A substrate processing system as described in Embodiment 28, A substrate processing system in which the first column of the process module is configured to perform the first process independently of the second column of the process module that performs the second process. [Form 31] A substrate processing system as described in Embodiment 27, A substrate processing system further comprising a power distribution assembly configured to supply power to the first row and the second row of the process module. [Form 32] A substrate processing system as described in Embodiment 31, A substrate processing system in which the power distribution assembly is configured to supply power to the first column of the process module independently of the power supply to the second column of the process module. [Form 33] A substrate processing system as described in Embodiment 31, A substrate processing system in which the first row of process modules is located on the first side of the substrate processing system, the second row of process modules is located on the second side of the substrate processing system opposite to the first side, and the power distribution assembly is located on the third side of the substrate processing system between the first side and the second side. [Form 34] A substrate processing system as described in Embodiment 33, A substrate processing system further comprising a lockout / tagout (LOTO) assembly located on the third side of the substrate processing system. [Form 35] A substrate processing system as described in Embodiment 34, A substrate processing system further comprising an equipment front-end module (EFEM) located on the fourth side of the substrate processing system opposite to the third side. [Form 36] A substrate processing system as described in Embodiment 27, A substrate processing system further comprising: a first equipment gas interface box configured to distribute gas to the first row of the process module; and a second equipment gas interface box configured to distribute gas to the second row of the process module. [Form 37] A substrate processing system as described in Embodiment 36, A substrate processing system in which the first equipment gas interface box is configured to distribute gas to the first row of the process module independently of the second equipment gas interface box which distributes gas to the second row of the process module. [Form 38] A substrate processing system as described in Embodiment 27, A substrate processing system in which the first column of the process module includes five of the process modules, and the second column of the process module includes five of the process modules. [Form 39] A substrate processing system as described in Embodiment 38, A substrate processing system comprising, in each of the first and second columns, two hoists configured to raise and lower the top plates of at least three of the process modules. [Form 40] A substrate processing system as described in Embodiment 39, A substrate processing system in which each of the two hoists is configured to raise and lower the respective top plates of the central process module among the five process modules. [Form 41] A substrate processing system as described in Embodiment 19, The process module is a substrate processing system comprising a slide and pivot assembly configured to rotate the bias assembly of the process module away from the processing chamber.

Claims

1. A substrate processing system, Vacuum transfer module and A plurality of process modules defining each processing chamber, wherein the plurality of process modules include a first row of process modules located on a first side of the vacuum transfer module, and a second row of process modules located on a second side of the vacuum transfer module opposite to the first side, Each of the aforementioned process modules is A gas box configured to selectively supply at least one gas and / or gas mixture to the processing chamber of the process module, wherein the gas box is positioned on the process module, and An RF generator configured to generate radio frequency (RF) power to generate plasma in the processing chamber, wherein the RF generator is located on the process module, and the gas box and the RF generator are located side by side on the process module. Includes, The RF generator is positioned inside the gas box with respect to the linear axis of the substrate processing system, in a substrate processing system.

2. A substrate processing system according to claim 1, A substrate processing system having a linear axis, wherein the first and second rows of the process modules are parallel to the linear axis and arranged on both sides of the linear axis, and the gas box is positioned inside the RF generator with respect to the linear axis of the substrate processing system.

3. A substrate processing system according to claim 1, A substrate processing system wherein the process module has a vertical column footprint defined by the outer periphery of the process module, and the outer peripheries of the gas box and the RF generator do not exceed the vertical column footprint of the process module.

4. A substrate processing system according to claim 1, A substrate processing system in which the first column of the process module is configured to perform a first process, and the second column of the process module is configured to perform a second process.

5. A substrate processing system, Vacuum transfer module and A plurality of process modules defining each processing chamber, wherein the plurality of process modules include a first row of process modules located on a first side of the vacuum transfer module, and a second row of process modules located on a second side of the vacuum transfer module opposite to the first side, Each of the aforementioned process modules is A gas box configured to selectively supply at least one gas and / or gas mixture to the processing chamber of the process module, wherein the gas box is positioned on the process module, and An RF generator configured to generate radio frequency (RF) power to generate plasma in the processing chamber, wherein the RF generator is located on the process module, and the gas box and the RF generator are located side by side on the process module. Includes, The first column of the process module is configured to perform a first process, and the second column of the process module is configured to perform a second process. A substrate processing system in which the first process is a dielectric etching process and the second process is a conductive etching process.

6. A substrate processing system, Vacuum transfer module and A plurality of process modules defining each processing chamber, wherein the plurality of process modules include a first row of process modules located on a first side of the vacuum transfer module, and a second row of process modules located on a second side of the vacuum transfer module opposite to the first side, Each of the aforementioned process modules is A gas box configured to selectively supply at least one gas and / or gas mixture to the processing chamber of the process module, wherein the gas box is positioned on the process module, and An RF generator configured to generate radio frequency (RF) power to generate plasma in the processing chamber, wherein the RF generator is located on the process module, and the gas box and the RF generator are located side by side on the process module. Includes, The first column of the process module is configured to perform a first process, and the second column of the process module is configured to perform a second process. A substrate processing system in which the first column of the process module is configured to perform the first process independently of the second column of the process module that performs the second process.

7. A substrate processing system, Vacuum transfer module and A plurality of process modules defining each processing chamber, wherein the plurality of process modules include a first row of process modules located on a first side of the vacuum transfer module, and a second row of process modules located on a second side of the vacuum transfer module opposite to the first side, Each of the aforementioned process modules is A gas box configured to selectively supply at least one gas and / or gas mixture to the processing chamber of the process module, wherein the gas box is positioned on the process module, and An RF generator configured to generate radio frequency (RF) power to generate plasma in the processing chamber, wherein the RF generator is located on the process module, and the gas box and the RF generator are located side by side on the process module. Includes, A substrate processing system further comprising a power distribution assembly configured to supply power to the first row and the second row of the process module.

8. A substrate processing system according to claim 7, A substrate processing system in which the power distribution assembly is configured to supply power to the first column of the process module independently of the power supply to the second column of the process module.

9. A substrate processing system according to claim 7, The power distribution assembly is located on the third side of the vacuum transfer module between the first side and the second side in a substrate processing system.

10. A substrate processing system according to claim 9, A substrate processing system further comprising a lockout / tagout (LOTO) assembly located on the third side of the vacuum transfer module.

11. A substrate processing system according to claim 10, A substrate processing system further comprising an equipment front-end module (EFEM) located on the fourth side of the vacuum transfer module opposite to the third side.

12. A substrate processing system, Vacuum transfer module and A plurality of process modules defining each processing chamber, wherein the plurality of process modules include a first row of process modules located on a first side of the vacuum transfer module, and a second row of process modules located on a second side of the vacuum transfer module opposite to the first side, Each of the aforementioned process modules is A gas box configured to selectively supply at least one gas and / or gas mixture to the processing chamber of the process module, wherein the gas box is positioned on the process module, and An RF generator configured to generate radio frequency (RF) power to generate plasma in the processing chamber, wherein the RF generator is located on the process module, and the gas box and the RF generator are located side by side on the process module. Includes, A substrate processing system further comprising: a first equipment gas interface box configured to distribute gas to the first row of the process module; and a second equipment gas interface box configured to distribute gas to the second row of the process module.

13. A substrate processing system according to claim 12, A substrate processing system in which the first equipment gas interface box is configured to distribute gas to the first row of the process module independently of the second equipment gas interface box which distributes gas to the second row of the process module.

14. A substrate processing system according to claim 1, A substrate processing system in which the first row of the process module includes five of the process modules, and the second row of the process module includes five of the process modules.

15. A substrate processing system, Vacuum transfer module and A plurality of process modules defining each processing chamber, wherein the plurality of process modules include a first row of process modules located on a first side of the vacuum transfer module, and a second row of process modules located on a second side of the vacuum transfer module opposite to the first side, Each of the aforementioned process modules is A gas box configured to selectively supply at least one gas and / or gas mixture to the processing chamber of the process module, wherein the gas box is positioned on the process module, and An RF generator configured to generate radio frequency (RF) power to generate plasma in the processing chamber, wherein the RF generator is located on the process module, and the gas box and the RF generator are located side by side on the process module. Includes, A substrate processing system comprising two hoists configured to raise and lower the top plates of at least three of the process modules, each of the first and second rows.

16. A substrate processing system according to claim 15, A substrate processing system in which each of the two hoists is configured to raise and lower the respective top plates of the central process module among the five process modules.

17. A substrate processing system, Vacuum transfer module and A plurality of process modules defining each processing chamber, wherein the plurality of process modules include a first row of process modules located on a first side of the vacuum transfer module, and a second row of process modules located on a second side of the vacuum transfer module opposite to the first side, Each of the aforementioned process modules is A gas box configured to selectively supply at least one gas and / or gas mixture to the processing chamber of the process module, wherein the gas box is positioned on the process module, and An RF generator configured to generate radio frequency (RF) power to generate plasma in the processing chamber, wherein the RF generator is located on the process module, and the gas box and the RF generator are located side by side on the process module. Includes, A substrate processing system comprising each of the process modules, including a slide and pivot assembly configured to rotate the bias assembly of the process module away from the processing chamber.

18. A substrate processing system, A process module defining a processing chamber, wherein the process module is configured to perform at least one process on a substrate placed within the processing chamber, A gas box configured to selectively supply at least one gas and / or gas mixture to the processing chamber of the process module, wherein the gas box comprises a gas box positioned on the process module, An RF generator configured to generate radio frequency (RF) power to generate plasma in the processing chamber, the RF generator comprising an RF generator positioned on the process module, The gas box and the RF generator are arranged side by side on the process module. The RF generator is positioned inside the gas box with respect to the linear axis of the substrate processing system, in a substrate processing system.

19. A substrate processing system according to claim 18, The gas box is positioned inside the RF generator with respect to the linear axis of the substrate processing system, in a substrate processing system.

20. A substrate processing system, A process module defining a processing chamber, wherein the process module is configured to perform at least one process on a substrate placed within the processing chamber, A gas box configured to selectively supply at least one gas and / or gas mixture to the processing chamber of the process module, wherein the gas box comprises a gas box positioned on the process module, An RF generator configured to generate radio frequency (RF) power to generate plasma in the processing chamber, the RF generator comprising an RF generator positioned on the process module, The gas box is a substrate processing system positioned above the RF generator.

21. A substrate processing system according to claim 18, The RF generator is a substrate processing system located on top of the gas box.

22. A substrate processing system according to claim 18, A substrate processing system wherein the process module has a vertical column footprint defined by the outer periphery of the process module, and the outer peripheries of the gas box and the RF generator do not exceed the vertical column footprint of the process module.

23. A substrate processing system according to claim 18, A substrate processing system further comprising a plurality of the process modules arranged in a linear configuration.

24. A substrate processing system according to claim 23, A substrate processing system comprising the plurality of process modules, a first row of the process modules, and a second row of the process modules.

25. A substrate processing system according to claim 24, A substrate processing system in which the first column of the process module is configured to perform a first process, and the second column of the process module is configured to perform a second process.

26. A substrate processing system, A process module defining a processing chamber, wherein the process module is configured to perform at least one process on a substrate placed within the processing chamber, A gas box configured to selectively supply at least one gas and / or gas mixture to the processing chamber of the process module, wherein the gas box comprises a gas box positioned on the process module, An RF generator configured to generate radio frequency (RF) power to generate plasma in the processing chamber, the RF generator comprising an RF generator positioned on the process module, The process further comprises a plurality of linearly arranged process modules, The plurality of process modules include a first column of the process module and a second column of the process module, The first column of the process module is configured to perform a first process, and the second column of the process module is configured to perform a second process. A substrate processing system in which the first process is a dielectric etching process and the second process is a conductive etching process.

27. A substrate processing system, A process module defining a processing chamber, wherein the process module is configured to perform at least one process on a substrate placed within the processing chamber, A gas box configured to selectively supply at least one gas and / or gas mixture to the processing chamber of the process module, wherein the gas box comprises a gas box positioned on the process module, An RF generator configured to generate radio frequency (RF) power to generate plasma in the processing chamber, the RF generator comprising an RF generator positioned on the process module, The process further comprises a plurality of linearly arranged process modules, The plurality of process modules include a first column of the process module and a second column of the process module, The first column of the process module is configured to perform a first process, and the second column of the process module is configured to perform a second process. A substrate processing system in which the first column of the process module is configured to perform the first process independently of the second column of the process module that performs the second process.

28. A substrate processing system, A process module defining a processing chamber, wherein the process module is configured to perform at least one process on a substrate placed within the processing chamber, A gas box configured to selectively supply at least one gas and / or gas mixture to the processing chamber of the process module, wherein the gas box comprises a gas box positioned on the process module, An RF generator configured to generate radio frequency (RF) power to generate plasma in the processing chamber, the RF generator comprising an RF generator positioned on the process module, The process further comprises a plurality of linearly arranged process modules, The plurality of process modules include a first column of the process module and a second column of the process module, A substrate processing system further comprising a power distribution assembly configured to supply power to the first row and the second row of the process module.

29. A substrate processing system according to claim 28, A substrate processing system in which the power distribution assembly is configured to supply power to the first column of the process module independently of the power supply to the second column of the process module.

30. A substrate processing system according to claim 29, A substrate processing system in which the first row of process modules is located on the first side of the substrate processing system, the second row of process modules is located on the second side of the substrate processing system opposite to the first side, and the power distribution assembly is located on the third side of the substrate processing system between the first side and the second side.

31. A substrate processing system according to claim 30, A substrate processing system further comprising a lockout / tagout (LOTO) assembly located on the third side of the substrate processing system.

32. A substrate processing system according to claim 31, A substrate processing system further comprising an equipment front-end module (EFEM) located on the fourth side of the substrate processing system, opposite to the third side.

33. A substrate processing system, A process module defining a processing chamber, wherein the process module is configured to perform at least one process on a substrate placed within the processing chamber, A gas box configured to selectively supply at least one gas and / or gas mixture to the processing chamber of the process module, wherein the gas box comprises a gas box positioned on the process module, An RF generator configured to generate radio frequency (RF) power to generate plasma in the processing chamber, the RF generator comprising an RF generator positioned on the process module, The process further comprises a plurality of linearly arranged process modules, The plurality of process modules include a first column of the process module and a second column of the process module, A substrate processing system further comprising: a first equipment gas interface box configured to distribute gas to the first row of the process module; and a second equipment gas interface box configured to distribute gas to the second row of the process module.

34. A substrate processing system according to claim 33, A substrate processing system in which the first equipment gas interface box is configured to distribute gas to the first row of the process module independently of the second equipment gas interface box which distributes gas to the second row of the process module.

35. A substrate processing system, A process module defining a processing chamber, wherein the process module is configured to perform at least one process on a substrate placed within the processing chamber, A gas box configured to selectively supply at least one gas and / or gas mixture to the processing chamber of the process module, wherein the gas box comprises a gas box positioned on the process module, An RF generator configured to generate radio frequency (RF) power to generate plasma in the processing chamber, the RF generator comprising an RF generator positioned on the process module, The process further comprises a plurality of linearly arranged process modules, The plurality of process modules include a first column of the process module and a second column of the process module, The first column of the process module includes five of the process modules, and the second column of the process module includes five of the process modules. A substrate processing system comprising two hoists configured to raise and lower the top plates of at least three of the process modules, each of the first and second rows.

36. A substrate processing system according to claim 35, A substrate processing system in which each of the two hoists is configured to raise and lower the respective top plates of the central process module among the five process modules.

37. A substrate processing system, A process module defining a processing chamber, wherein the process module is configured to perform at least one process on a substrate placed within the processing chamber, A gas box configured to selectively supply at least one gas and / or gas mixture to the processing chamber of the process module, wherein the gas box comprises a gas box positioned on the process module, An RF generator configured to generate radio frequency (RF) power to generate plasma in the processing chamber, the RF generator comprising an RF generator positioned on the process module, The process module is a substrate processing system comprising a slide and pivot assembly configured to rotate the bias assembly of the process module away from the processing chamber.

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