Components and processes for controlling plasma processing by-products

Abstract

To provide a component for managing non-volatile and / or low-volatility byproduct materials that are generated within a plasma processing region of a plasma processing chamber during performance of various plasma-based processes on a substrate, and a processing method thereof.SOLUTION: In a system 100, a component includes a top window structure 107, a liner structure 139, an edge ring structure 131, a focus ring structure 135, a ground ring structure 133, a substrate access port shield, an insert liner for a port opening in a chamber wall, and an exhaust baffle assembly positioned within an exhaust channel. One or more process-exposed surfaces of various components are subjected to a surface roughening / texturizing process to impart a surface roughness and / or engineered topography to the process-exposed surface that promotes adhesion and retention of plasma process byproduct materials. The various components are used in lead zirconate titanate (PZT) film etching and / or platinum (Pt) film etching processes.SELECTED DRAWING: Figure 1B

Description

Technical Field

[0001] The present invention relates to semiconductor device manufacturing. [Background Art] In various semiconductor manufacturing processes, in a processing chamber where a substrate is placed, a processing gas is converted into plasma. The substrate is exposed to the plasma to produce a desired effect on the substrate, such as etching / removing material from the substrate, depositing material on the substrate, and / or modifying the properties of the material on the substrate. During some semiconductor manufacturing processes, non-volatile and / or low-volatile plasma processing by-products can be generated in the processing chamber. When these by-products accumulate by depositing on various components together with the processing chamber, various problems can occur. For example, the by-products may flake off and / or peel off from the components and land on the surfaces within the processing chamber where it is preferable to remain free of contaminants, such as the substrate support structure and the substrate itself. Further, the by-products may diffuse into small openings and mechanically active structures within the processing chamber, causing operational problems and / or increasing the amount of time and cost required for cleaning the processing chamber. Also, the deposition and shedding of by-product material within the processing chamber increases the frequency with which the processing chamber must be stopped for cleaning, which negatively affects the substrate manufacturing throughput of the processing chamber. The present invention arose in this context.

Summary of the Invention

[0002] In one exemplary embodiment, a surface-textured plasma processing chamber component is disclosed as a ceramic component configured to be placed within a plasma processing chamber, the ceramic component comprising at least one rough surface oriented such that the ceramic component is exposed to plasma processing by-products when the ceramic component is placed within the plasma processing chamber during operation of the plasma processing chamber. The at least one rough surface is configured to facilitate the adhesion of plasma processing by-products to the ceramic component.

[0003] In one embodiment, a plasma processing chamber is disclosed. The plasma processing chamber includes a substrate support structure configured to hold a substrate and expose it to plasma during the operation of the plasma processing chamber. The plasma processing chamber further includes an upper window structure positioned above the substrate support structure to establish a plasma processing region between the substrate support structure and the upper window structure. The upper window structure is made of a ceramic material. The upper window structure has a bottom surface facing the plasma processing region. The bottom surface has a surface roughness that promotes the adhesion of plasma processing byproducts to the bottom surface.

[0004] In one embodiment, a method for plasma treatment of a substrate is disclosed. The method comprises the step of preparing a plasma treatment chamber comprising a substrate support structure and an upper window structure. The substrate support structure is configured to hold the substrate in an exposed state to the plasma. The upper window structure is positioned above the substrate support structure so as to establish a plasma treatment region between the substrate support structure and the upper window structure. The upper window structure is formed of a ceramic material. The upper window structure has a bottom surface facing the plasma treatment region. The bottom surface has a surface roughness that promotes the adhesion of plasma treatment by-products to the bottom surface. The method further comprises the step of generating plasma in the plasma treatment region. The components of the plasma interact with the material on the substrate to generate plasma treatment by-products, some of which adhere to the bottom surface of the upper window structure.

[0005] In one embodiment, a method for manufacturing a component for use in a plasma processing chamber is disclosed. The method comprises the step of forming a ceramic component to be placed in the plasma processing chamber. The ceramic component has at least one processing-exposed surface. The method further comprises the step of roughening at least one processing-exposed surface to have an average surface roughness in the range of about 150 microinches (about 3.81 micrometers) to about 500 microinches (about 12.7 micrometers).

[0006] In one embodiment, a method is disclosed for converting a coated component for use in a plasma processing chamber into a roughened component for use in a plasma processing chamber. The method comprises the step of stripping the coating from the ceramic component to obtain a ceramic bare material for forming the ceramic component. The ceramic component is configured to be installed in a plasma processing chamber. The ceramic component has at least one processing-exposed surface. The method further comprises the step of roughening at least one processing-exposed surface to have an average surface roughness in the range of about 150 microinches to about 500 microinches.

[0007] In one embodiment, an edge ring for use within a plasma processing chamber is disclosed. The focus ring comprises a ring structure made of a ceramic material. The ring structure is configured to surround a substrate support structure within the plasma processing chamber. The ring structure has an inner surface oriented to be exposed to plasma processing byproducts when the ring structure is placed inside the plasma processing chamber during operation of the plasma processing chamber. The inner surface is formed to have controlled surface topographic variations that promote the adhesion of plasma processing byproducts to the inner surface.

[0008] In one embodiment, a plasma processing chamber is disclosed. The plasma processing chamber includes a substrate support structure configured to hold a substrate and expose it to the plasma during the operation of the plasma processing chamber. The plasma processing chamber further includes a focus ring having a ring structure made of a ceramic material. The ring structure is configured to surround the substrate support structure within the plasma processing chamber. The ring structure has an inner surface oriented to be exposed to plasma processing byproducts during the operation of the plasma processing chamber. The inner surface is formed to have controlled surface topographic variations that promote the adhesion of plasma processing byproducts to the inner surface.

[0009] In one embodiment, a method for plasma treatment of a substrate is disclosed. The method comprises the step of preparing a plasma treatment chamber comprising a substrate support structure and a focus ring. The focus ring comprises a ring structure formed of a ceramic material. The ring structure is configured to surround the substrate support structure within the plasma treatment chamber. The ring structure has an inner surface oriented to be exposed to plasma treatment byproducts during the operation of the plasma treatment chamber. The inner surface is formed to have controlled surface topographic variations that promote the adhesion of plasma treatment byproducts to the inner surface. The method further comprises the step of generating plasma in a plasma treatment region above the substrate support structure. Components of the plasma interact with the material on the substrate to generate plasma treatment byproducts, some of which adhere to the inner surface of the ring structure.

[0010] In one embodiment, a method for manufacturing a focus ring for use in a plasma processing chamber is disclosed. The method comprises the step of forming a ring structure of ceramic material. The ring structure is configured to surround a substrate support structure in the plasma processing chamber. The ring structure has an inner surface oriented so as to be exposed to plasma processing byproducts when the ring structure is placed in the plasma processing chamber during operation of the plasma processing chamber. The method further comprises the step of forming controlled surface topographic variations on the inner surface of the ring structure. The controlled surface topographic variations promote the adhesion of plasma processing byproducts to the inner surface.

[0011] In one embodiment, a substrate access port shield for use in a plasma processing chamber is disclosed. The substrate access port shield comprises a shield portion, a first support portion, and a second support portion. The first support portion extends from a first end of the shield portion. The first support portion is configured to engage with a vertically movable component in the plasma processing chamber. The second support portion extends from a second end of the shield portion. The second support portion is configured to engage with a vertically movable component in the plasma processing chamber. The shield portion and the first and second support portions form an integral shield structure extending along an arc. Vertical movement of the vertically movable component causes a corresponding vertical movement of the integral shield structure. The shield portion is configured such that, when the vertically movable component is in a lower vertical position, it at least partially covers the substrate access port opening of the plasma processing chamber, with the first and second support portions engaging with the vertically movable component. The shield portion is configured such that, when the vertically movable component is in an upper vertical position, it does not cover the substrate access port opening of the plasma processing chamber, with the first and second support portions engaging with the vertically movable component.

[0012] In one embodiment, a plasma processing chamber is disclosed. The plasma processing chamber includes a substrate support structure configured to hold a substrate exposed to plasma during the operation of the plasma processing chamber. The plasma processing chamber further includes a focus ring structure configured to surround the substrate support structure within the plasma processing chamber. The focus ring structure includes a ring portion formed as a hollow straight cylinder and three radial extension structures configured to extend radially outward from the outer surface of the ring portion. The three radial extension structures are spaced apart along the outer circumference of the ring portion. The plasma processing chamber further includes an integral shield structure comprising a shield portion, a first support portion, and a second support portion. The first support portion extends from the first end of the shield portion. The first support portion is configured to engage with the first of the three radial extension structures of the focus ring structure. The second support portion extends from the second end of the shield portion. The second support portion is configured to engage with the second of the three radial extension structures of the focus ring structure. The integral shield structure is formed to extend along a circular arc. The shield portion is configured to at least partially cover the substrate access port opening of the plasma processing chamber when the focus ring structure is in the lower vertical position. The shield portion is configured not to cover the substrate access port opening of the plasma processing chamber when the focus ring structure is in the upper vertical position.

[0013] In one embodiment, a method for plasma treatment of a substrate is disclosed. The method comprises the step of preparing a plasma treatment chamber comprising a substrate support structure, a focus ring structure, and an integral shield structure. The focus ring structure is configured to surround the substrate support structure. The focus ring structure comprises a ring portion formed as a hollow straight cylinder and three radial extension structures configured to extend radially outward from the outer surface of the ring portion. The three radial extension structures are spaced apart along the outer circumference of the ring portion. The integral shield structure comprises a shield portion, a first support portion, and a second support portion. The first support portion extends from the first end of the shield portion. The first support portion is configured to engage with the first of the three radial extension structures of the focus ring structure. The second support portion extends from the second end of the shield portion. The second support portion is configured to engage with the second of the three radial extension structures of the focus ring structure. The integral shield structure is formed to extend along a circular arc. The shield portion is configured to at least partially cover the substrate access port opening of the plasma processing chamber when the focus ring structure is in the lower vertical position. The shield portion is configured not to cover the substrate access port opening of the plasma processing chamber when the focus ring structure is in the upper vertical position. The method further comprises the step of positioning the focus ring structure in the lower vertical position. The method further comprises the step of generating plasma in the plasma processing region above the substrate support structure.

[0014] In one embodiment, a method for manufacturing a substrate access port shield for use in a plasma processing chamber is disclosed. The method comprises the step of forming an integral shield structure comprising a shield portion, a first support portion extending from a first end of the shield portion, and a second support portion extending from a second end of the shield portion. The first support portion is configured to engage with a vertically movable component in the plasma processing chamber. The second support portion is configured to engage with a vertically movable component in the plasma processing chamber. The integral shield structure is formed to extend along an arc. The shield portion is configured such that, when the first and second support portions engage with the vertically movable component, it at least partially covers the substrate access port opening of the plasma processing chamber when the vertically movable component is in a lower vertical position. The shield portion is configured such that, when the first and second support portions engage with the vertically movable component, it does not cover the substrate access port opening of the plasma processing chamber when the vertically movable component is in an upper vertical position.

[0015] In one embodiment, an insert liner for a port of a plasma processing chamber is disclosed. The insert liner is configured to cover the inner surface of a port formed through the wall of the plasma processing chamber. The insert liner is configured to have sufficient mechanical flexibility to compress its outer surface profile in order to allow insertion of the insert liner into the port. The insert liner is configured to apply a spring force to the inner surface of the port when the compression of its outer surface profile is released.

[0016] In one embodiment, a plasma processing system is disclosed. The plasma processing system comprises a plasma processing chamber having a plasma processing region in which plasma is generated during the operation of the plasma processing chamber. The plasma processing chamber comprises a wall that forms part of an enclosure around the plasma processing region. The wall comprises a port formed through the wall. The plasma processing system comprises an insert liner disposed within the port. The insert liner is configured to cover the inner surface of the port. The insert liner is configured to apply a spring force to the inner surface of the port in order to hold the insert liner in the appropriate position within the port.

[0017] In one embodiment, a method for plasma treatment of a substrate is disclosed. The method comprises the step of preparing a plasma treatment chamber having a plasma treatment region in which plasma is generated during the operation of the plasma treatment chamber. The plasma treatment chamber comprises a wall that forms part of an enclosure around the plasma treatment region. The wall comprises a port formed through the wall. The method further comprises the step of placing an insert liner in the port. The insert liner is configured to cover the inner surface of the port. The insert liner is configured to apply a spring force to the inner surface of the port in order to hold the insert liner in the appropriate position within the port. The method further comprises the step of generating plasma in the plasma treatment region by exposing the substrate. Components of the plasma interact with the material on the substrate to produce plasma treatment byproducts. The insert liner prevents the plasma treatment byproducts from coming into contact with the inner surface of the port.

[0018] In one embodiment, a method for manufacturing an insert liner for a port of a plasma processing chamber is disclosed. The method comprises the step of forming an insert liner so as to cover the inner surface of a port formed through the wall of the plasma processing chamber. The insert liner is configured to have sufficient mechanical flexibility to compress its outer surface profile in order to allow insertion of the insert liner into the port. The insert liner is configured to apply a spring force to the inner surface of the port when the compression of its outer surface profile is released.

[0019] In one embodiment, an exhaust baffle assembly for use in a plasma processing chamber is disclosed. The exhaust baffle assembly comprises at least one baffle member configured to fit into the exhaust flow path of the plasma processing chamber. The at least one baffle member is shaped to deflect the processing exhaust gas flow when placed in the exhaust flow path. The outer surface of the at least one baffle member is tuned to promote the adhesion of plasma processing by-products present in the processing exhaust gas flow to the at least one baffle member.

[0020] In one embodiment, a plasma processing system is disclosed. The plasma processing system comprises a plasma processing chamber having a plasma processing region where plasma is generated during the operation of the plasma processing chamber. The plasma processing system further comprises an exhaust channel for the plasma processing chamber. The exhaust channel is in fluid communication with the plasma processing region. The exhaust channel is configured to direct the processing exhaust gas flow from the plasma processing region. The plasma processing system further comprises a pump connected to the exhaust channel. The pump is configured to apply negative pressure to the interior of the exhaust channel. The plasma processing system further comprises an exhaust baffle assembly located in the exhaust channel. The exhaust baffle assembly comprises at least one baffle member shaped to deflect the processing exhaust gas flow in the exhaust channel. The outer surface of at least one baffle member is tuned to promote the adhesion of plasma processing by-products present in the processing exhaust gas flow to at least one baffle member.

[0021] In one embodiment, a method for plasma treatment of a substrate is disclosed. The method comprises the step of preparing a plasma treatment system comprising a plasma treatment chamber and an exhaust channel for the plasma treatment chamber. The plasma treatment chamber comprises a plasma treatment region in which plasma is generated during the operation of the plasma treatment chamber. The exhaust channel is in fluid communication with the plasma treatment region. The exhaust channel is configured to direct the treatment exhaust gas flow from the plasma treatment region. The plasma treatment system further comprises a pump connected to the exhaust channel. The pump is configured to apply negative pressure to the interior of the exhaust channel. The plasma treatment system comprises an exhaust baffle assembly disposed within the exhaust channel. The exhaust baffle assembly comprises at least one baffle member shaped to deflect the treatment exhaust gas flow within the exhaust channel. The outer surface of at least one baffle member is adjusted to promote the adhesion of plasma treatment by-products present in the treatment exhaust gas flow to at least one baffle member. The method further comprises the step of generating plasma in the plasma treatment region by exposing the substrate to it. The method further comprises the step of operating a pump to apply negative pressure inside the exhaust channel in order to draw the processed exhaust gas flow from the plasma processing area to the exhaust channel through the exhaust baffle assembly in the exhaust channel.

[0022] In one embodiment, a method for manufacturing an exhaust baffle assembly for use in a plasma processing system is disclosed. The method comprises the step of forming at least one baffle member so as to fit into the exhaust flow path of a plasma processing chamber. The at least one baffle member is shaped to deflect the processed exhaust gas flow when placed in the exhaust flow path. The method further comprises the step of preparing the outer surface of at least one baffle member to promote the adhesion of plasma processing by-products present in the processed exhaust gas flow to at least one baffle member.

[0023] Other aspects and advantages of the present invention will become apparent from the following detailed description with reference to the accompanying drawings illustrating the invention. [Brief explanation of the drawing]

[0024] [Figure 1A] A diagram showing an example of a system for performing plasma processing on a substrate, according to some embodiments.

[0025] [Figure 1B] A vertical cross-sectional view showing a part of the system of FIG. 1A, according to some embodiments.

[0026] [Figure 1C] An isometric view showing a substrate support structure with an edge ring structure and a ground ring structure arranged to surround the substrate support structure, according to some example embodiments.

[0027] [Figure 1D] An isometric view showing a substrate support structure including an edge ring structure and a ground ring structure arranged to surround the substrate support structure, and further including a focus ring structure arranged above and around the upper surface of the substrate support structure, according to some example embodiments.

[0028] [Figure 1E] A diagram showing the configuration of FIG. 1D in a state where the focus ring structure is located above the substrate support structure, according to some example embodiments.

[0029] [Figure 1F] An isometric view showing an example of a liner structure arranged on the ground ring structure, according to some example embodiments.

[0030] [Figure 2] An isometric view showing the bottom surface of the upper window structure, according to some embodiments.

[0031] [Figure 3] An isometric view showing a liner structure, according to some embodiments.

[0032] [Figure 4]An isometric view showing an edge ring structure according to several embodiments.

[0033] [Figure 5] An isometric view showing a focus ring structure according to several embodiments.

[0034] [Figure 6] An isometric view showing a grounding ring structure according to several embodiments.

[0035] [Figure 7] A flowchart illustrating a method for plasma treatment of a substrate according to several embodiments.

[0036] [Figure 8] A flowchart illustrating a method for manufacturing surface-textured plasma treatment chamber components according to several embodiments of the present invention.

[0037] [Figure 9] A flowchart illustrating a method for converting a coated plasma processing chamber component into a surface-textured plasma processing chamber component according to several embodiments of the present invention.

[0038] [Figure 10A] An isometric view showing a focus ring structure having controlled surface topographic variation on the inner surface of the ring portion of the focus ring structure, according to several embodiments.

[0039] [Figure 10B] A perspective view showing a focus ring structure according to several embodiments, as shown in Figure 10A.

[0040] [Figure 10C] A top view showing a focus ring structure according to several embodiments, as shown in Figure 10A.

[0041] [Figure 10D]A detailed view showing the portion shown in Figure 10C according to several embodiments.

[0042] [Figure 10E] A cross-sectional view showing two adjacent convex structures according to several embodiments.

[0043] [Figure 10F] A vertical cross-sectional view passing through its center, showing the focus ring structure according to several embodiments.

[0044] [Figure 10G] A diagram illustrating how to form a rectangular grid convex structure on the inner surface of the ring portion of a focus ring structure according to several embodiments.

[0045] [Figure 10H] A diagram illustrating how to form a square grid convex structure on the inner surface of the ring portion of a focus ring structure according to several embodiments.

[0046] [Figure 10I] A diagram illustrating how to form a hexagonal grid convex structure on the inner surface of the ring portion of a focus ring structure according to several embodiments.

[0047] [Figure 10J] A diagram illustrating how to form a convex parallelogram lattice structure on the inner surface of the ring portion of a focus ring structure according to several embodiments.

[0048] [Figure 10K] A diagram illustrating how to form a rhombic lattice convex structure on the inner surface of the ring portion of a focus ring structure according to several embodiments.

[0049] [Figure 11] A flowchart illustrating a method for plasma treatment of a substrate according to several embodiments.

[0050] [Figure 12]A flowchart illustrating a method for manufacturing a focus ring structure for use in a plasma processing chamber, according to several embodiments.

[0051] [Figure 13A] Figure 1A shows a system with an access control device positioned to cover an opening, according to several embodiments.

[0052] [Figure 13B] A diagram showing a chamber coupled with a substrate handling module by an access control device, according to several embodiments.

[0053] [Figure 14] A diagram showing a substrate access port shield used within a chamber according to several embodiments.

[0054] [Figure 15] An isometric view of a substrate access port shield showing a notched area, according to several embodiments.

[0055] [Figure 16] A figure shows a modified substrate access port shield in which the shield portion has a short vertical distance, according to several embodiments, in order to allow sufficient exposure of the chamber opening when the focus ring structure is in the fully upper vertical position.

[0056] [Figure 17A] A side view showing an example of a substrate access port shield arranged on the focus ring structure, with the focus ring structure in its fully lowered position, according to several embodiments.

[0057] [Figure 17B] A side view showing an example of a substrate access port shield arranged on the focus ring structure, with the focus ring structure in its fully upper position, according to several embodiments.

[0058] [Figure 18] A flowchart illustrating a method for plasma treatment of a substrate according to several embodiments.

[0059] [Figure 19] A flowchart illustrating a method for manufacturing a substrate access port shield for use in a plasma processing chamber, according to several embodiments.

[0060] [Figure 20] A diagram showing a chamber with an opening for inserting and removing a substrate, according to several embodiments.

[0061] [Figure 21] A figure showing, according to several embodiments, an insert liner configured to be inserted into an opening for inserting and removing a substrate from a chamber, and an insert liner configured to be inserted into an opening for a viewport.

[0062] [Figure 22] An isometric view showing an insert liner configured to be inserted into an opening for inserting and removing a substrate into a chamber, according to several embodiments.

[0063] [Figure 23] An isometric view showing an insert liner configured to be inserted into an opening for a viewport, according to several embodiments.

[0064] [Figure 24] Figure 22 shows a modified insert liner in which, according to several embodiments, the insert liner is cut open on the vertical side of the insert liner to form a gap.

[0065] [Figure 25] A front view showing a modified insert liner of Figure 22, which has a convex region formed on the upper surface of the insert liner according to several embodiments.

[0066] [Figure 26] A figure showing an insert liner configured to be inserted into an opening for a viewport, with a vertical surface that closes the opening on the inner surface of the chamber wall, according to several embodiments.

[0067] [Figure 27] A figure showing an insert liner configured to be inserted into an opening for a viewport, with a vertical surface that substantially covers the surface of a window exposed through the opening, according to several embodiments.

[0068] [Figure 28] A figure shows an insert liner configured to be inserted into an opening for a viewport, according to several embodiments, having a first vertical surface that substantially covers the surface of the window exposed through the opening, and a second vertical surface that closes the opening on the inner surface of the chamber wall.

[0069] [Figure 29] A diagram showing an insert plug configured to fit precisely into an opening for a viewport and provide continuity of the inner profile of the chamber wall, according to several embodiments.

[0070] [Figure 30] A flowchart illustrating a method for plasma treatment of a substrate according to several embodiments.

[0071] [Figure 31] A flowchart illustrating a method for manufacturing an insert liner for a plasma processing chamber according to several embodiments.

[0072] [Figure 32] A figure showing an example of an exhaust baffle assembly positioned within the exhaust passage of an exhaust assembly, according to several embodiments.

[0073] [Figure 33] A diagram showing an exhaust baffle assembly positioned in an exhaust passage adjacent to the chamber, according to several embodiments.

[0074] [Figure 34] A diagram showing, according to several embodiments, the exhaust baffle assembly positioned at the exhaust port from the chamber in a vertical cross-sectional view through the chamber, exhaust assembly, and exhaust baffle assembly.

[0075] [Figure 35] An isometric view showing an example of an exhaust baffle assembly according to several embodiments.

[0076] [Figure 36] A front view showing an exhaust baffle assembly according to several embodiments.

[0077] [Figure 37] A side view showing an exhaust baffle assembly according to several embodiments.

[0078] [Figure 38] A flowchart illustrating a method for plasma treatment of a substrate according to several embodiments.

[0079] [Figure 39] A flowchart illustrating a method for manufacturing an exhaust baffle assembly for use in a plasma processing system, according to several embodiments. [Modes for carrying out the invention]

[0080] The following sections describe many specific details to ensure a thorough understanding of the present invention. However, as will be apparent to those skilled in the art, the present invention can be implemented without some or all of these specific details. Furthermore, detailed descriptions of well-known processing operations have been omitted to avoid unnecessarily obscuring the present invention.

[0081] Figure 1A shows an example 100 of a system for performing plasma treatment on a substrate 101 according to several embodiments. Figure 1B is a vertical cross-sectional view showing a portion of the system 100 according to several embodiments. In some embodiments, the substrate 101 referred to herein is a semiconductor substrate. However, in other embodiments, the substrate 101 referred to herein may be a substrate formed of sapphire, GaN, GaAs, or SiC, or other substrate materials, and should be understood to include glass panels / substrates, metal foils, metal sheets, polymer materials, etc. Also, in various embodiments, the substrate 101 referred to herein may vary in form, shape, and / or size. For example, in some embodiments, the substrate 101 may correspond to a 200 mm semiconductor wafer, a 300 mm semiconductor wafer, or a 450 mm semiconductor wafer. Also, in some embodiments, the substrate 101 may correspond to a non-circular substrate, such as a rectangular substrate for a flat panel display, in particular in terms of shape.

[0082] The system 100 includes a plasma processing chamber 102 for performing a plasma-based treatment on the substrate 101. The plasma-based treatment may be essentially any treatment in which plasma components are used to modify the properties of the substrate 101 in a predetermined controlled manner. In various embodiments, the plasma-based treatment is an etching treatment to remove material from the substrate 101, or a vapor deposition treatment to add material to the substrate 101, or a combination of etching and vapor deposition treatments.

[0083] Chamber 102 comprises a wall 105 enclosing the interior of the chamber 102. In some embodiments, the wall 105 is formed of a conductive material and has an electrical connection to a reference ground potential. The wall 105 may have a plurality of openings / ports configured for various purposes. For example, the wall 105 of chamber example 102 comprises an opening 106A for loading and unloading a substrate 101 into the chamber 102. In some embodiments, the opening 106A is coupled with a slit valve that provides a passage for a robotic substrate handling device into the chamber 102 through the opening 106A and also provides sealing of the opening 106A during the operation of the chamber 102. The wall 105 of chamber example 102 also comprises an opening 106B that provides a viewport for observing the plasma processing area 109 inside the chamber 102, either manually or by various devices (in particular, such as an optical monitoring device or an optical endpoint detection device). The opening 106B may be sealed and covered by a window 108 formed of an optionally transparent material such as glass or plastic or other similar material.

[0084] The substrate support structure 103 is located inside the chamber 102 and is configured to hold the substrate 101 during the execution of plasma processing within the chamber 102. In some embodiments, the substrate support structure 103 is an electrostatic chuck configured to generate an electrostatic field for holding the substrate 101. In various embodiments, the substrate support structure 103 may comprise various components and systems. For example, the substrate support structure 103 may be configured to include one or more electrodes for transmitting high-frequency power and / or generating a bias voltage. The substrate support structure 103 may also comprise one or more temperature control devices, such as heaters and / or cooling channels. The substrate support structure 103 may also comprise multiple lift pins and associated mechanics to facilitate the movement of the substrate 101 between the robotic handling device and the substrate support structure 103. The substrate support structure 103 may also comprise multiple sensors and / or probes for measuring temperature and electrical parameters (such as voltage and / or current).

[0085] The upper window structure 107 is positioned above the substrate support structure 103 and is separated from the substrate support structure 103 such that a plasma processing area 109 exists between the substrate support structure 103 and the upper window structure 107. In some embodiments, the wall 105 includes an upper flange structure 111 configured to receive and support the upper window structure 107. The upper window structure 107 is formed of a material capable of transmitting radio frequency (RF) signals, such as quartz or ceramic. In some embodiments, the upper window structure 107 is also configured to function as a gas distribution plate. For example, the upper window structure 107 may include a plurality of gas input ports, an array of internal fluid channels fluid-connected to the gas input ports, and a plurality of gas output ports fluid-connected to the internal fluid channels. One or more processing gases supplied to the gas input ports of the upper window structure 107 flow through the internal fluid channels to the gas output ports of the upper window structure 107, where the processing gases are supplied into the plasma processing area 109. The gas output port and internal fluid flow path of the upper window structure 107 may be configured to supply one or more processing gases into the plasma processing region 109 in a spatially controlled manner.

[0086] A coil assembly 113 is positioned above the upper window structure 107. The coil assembly 113 is connected to the radio frequency (RF) generator 115 through an impedance matching circuit 117. The coil assembly 113 is configured to transmit RF power to the plasma processing area 109 through the upper window structure 107 when RF power is transmitted from the RF generator 115 to the coil assembly 113 through the impedance matching circuit 117. The impedance matching circuit 117 includes an array of capacitors and inductors configured to ensure that the impedance seen from the RF generator 115 at the input of the impedance matching circuit 117 is sufficiently close to the output impedance (typically 50 ohms) on which the RF generator 115 is designed to operate. As a result, the RF power generated and transmitted by the RF generator 115 is efficiently transmitted to the plasma processing area 109 without, for example, unacceptable or undesirable reflections.

[0087] In various embodiments, the RF generator 115 may comprise one or more RF signal generators operating at one or more frequencies. Multiple RF signal frequencies may be supplied to the coil assembly 113 simultaneously. In some embodiments, the signal frequencies output by the RF generator 115 are set within the range of 1 kHz to 100 MHz. In some embodiments, the signal frequencies output by the RF generator 115 are set within the range of 400 kHz to 60 MHz. In some embodiments, the RF generator 115 is configured to generate RF signals with frequencies of 2 MHz, 27 MHz, 13.56 MHz, and 60 MHz. In some embodiments, the RF generator 115 is configured to generate one or more high-frequency RF signals within the frequency range of approximately 2 MHz to approximately 60 MHz, and one or more low-frequency RF signals within the frequency range of approximately 100 kHz to approximately 2 MHz. It should be understood that the above-mentioned RF signal frequency ranges are provided as examples. In practice, the RF generator 115 may be configured to generate any RF signal having essentially any frequency necessary to generate plasma within the plasma processing region 109. Furthermore, the RF generator 115 may include frequency-based filtering (i.e., high-pass filtering and / or low-pass filtering) to ensure that a specified RF signal frequency is transmitted to the coil assembly 113.

[0088] Chamber 102 is connected to a processing gas supply system 120, which allows one or more processing gases to be supplied to the plasma processing area 109 in a controlled manner. The processing gas supply system 120 comprises one or more processing gas sources and an array of valves and mass flow controllers to enable the supply of one or more processing gases to the plasma processing area 109 at controlled flow rates and controlled flow times. During operation, the processing gas supply system 120 operates to supply one or more processing gases to the plasma processing area 109, and RF power is supplied from the RF generator 115 to the coil assembly 113, thereby generating an electromagnetic field within the plasma processing area 109 to convert one or more processing gases within the plasma processing area 109 into plasma. The reactive components of the plasma (such as ions and / or radicals) can then interact with parts of the substrate 101.

[0089] An exhaust assembly 119 is connected to the plasma processing chamber 102. The exhaust assembly 119 includes an exhaust passage 121 having an internal flow region that is in fluid communication with the plasma processing chamber 109. The exhaust assembly 119 also includes a pump 123 that is in fluid communication with the internal flow region of the exhaust passage 121. In some embodiments, the exhaust assembly 119 includes a duct / piping 122 for fluid communication between the exhaust passage 121 and the pump 123. During operation, the pump 123 operates to guide exhaust gas and processing byproducts from the plasma processing region 109 to the pump 123 through the internal flow region of the exhaust passage 121 and the duct / piping 122.

[0090] In some embodiments, the substrate support structure 103 is configured to receive bias RF power from a bias RF generator 125 through an impedance matching circuit 127 to attract ions from the plasma in the plasma processing region 109 toward the substrate 101 held on the substrate support structure 103, thereby providing the generation of a bias voltage on the substrate support structure 103 (and on the substrate 101 itself). The impedance matching circuit 127 comprises an array of capacitors and inductors configured to ensure that the impedance seen from the RF generator 125 at the input of the impedance matching circuit 127 is sufficiently close to the output impedance (typically 50 ohms) on which the RF generator 125 is designed to operate, so that the RF power generated and transmitted by the RF generator 125 is efficiently transmitted to the substrate support structure 103 without, for example, unacceptable or undesirable reflections.

[0091] In various embodiments, the bias RF generator 125 may comprise one or more RF signal generators operating at one or more frequencies. Multiple RF signal frequencies may be supplied to the substrate support structure 103 simultaneously. In some embodiments, the signal frequencies output by the bias RF generator 125 are set within the range of 1 kHz to 100 MHz. In some embodiments, the signal frequencies output by the bias RF generator 125 are set within the range of 400 kHz to 60 MHz. In some embodiments, the bias RF generator 125 is configured to generate RF signals with frequencies of 2 MHz, 27 MHz, 13.56 MHz, and 60 MHz. In some embodiments, the bias RF generator 125 is configured to generate one or more high-frequency RF signals within the frequency range of approximately 2 MHz to approximately 60 MHz, and one or more low-frequency RF signals within the frequency range of approximately 100 kHz to approximately 2 MHz. It should be understood that the above-mentioned RF signal frequency ranges are provided as examples. In practice, the bias RF generator 125 may be configured to generate any RF signal having essentially any frequency necessary to generate a predetermined bias voltage on the substrate 101. Furthermore, the bias RF generator 125 may include frequency-based filtering (i.e., high-pass filtering and / or low-pass filtering) to ensure that the specified RF signal frequency is transmitted to the substrate support structure 103.

[0092] System 100 may also include a control module 129. In some embodiments, the control module 129 is implemented as a combination of computer hardware and software. The control module 129 may be connected and configured to provide control of the processing gas supply system 120, the RF generator 115 and its associated impedance matching circuit 117, the RF generator 125 and its associated impedance matching circuit 127, the pump 123, and essentially any other controllable components of System 100 (in particular, such as temperature control devices and substrate lift pins in the substrate support structure 103). The control module 129 may also be connected and configured to receive signals from various components, sensors, and monitoring devices within System 100. For example, the control module 129 may be connected and configured to receive voltage and / or current measurement signals from the substrate support structure 103. The control module 129 may also be connected and configured to receive temperature and pressure measurement signals from within the plasma processing area 109. The control module 129 may be connected and configured to control virtually any active device (i.e., controllable device) within the system 100. It should also be understood that the control module 129 may be connected and configured to monitor virtually any physical and / or electrical state, condition, and / or parameter at virtually any location within the system 100. Furthermore, the control module 129 may be configured to synchronously instruct the operation of various components within the system 100 in order to perform the plasma processing operations described above on the substrate 101. For example, the control module 129 may be configured to operate the system 100 by executing processing input and control commands / programs. These processing input and control commands / programs may include processing recipes with time-dependent instructions for parameters (power levels, timing parameters, processing gases, mechanical movement of the substrate 101, etc.) necessary to obtain the desired processing results on the substrate 101.

[0093] Figure 1C is an isometric view showing a substrate support structure 103 with an edge ring structure 131 and a ground ring structure 133 arranged to surround the substrate support structure 103 according to several embodiments. Vertical cross-sectional views of the edge ring structure 131 and the ground ring structure 133 are also shown in Figure 1B according to several embodiments. In some embodiments, the edge ring structure 131 is configured to surround the substrate support structure 103 at a position immediately adjacent to the substrate support structure 103. The edge ring structure 131 provides a uniform RF field to support uniformity in plasma generation within the plasma processing region 109. In some embodiments, the edge ring structure 131 is formed of a ceramic material. In some embodiments, the edge ring structure 131 is formed of aluminum oxide. In some embodiments, the edge ring structure 131 is formed of silicon carbide. It should be understood that in various embodiments, the edge ring structure 131 may be formed of essentially any material that has sufficiently high electrical resistance to maintain electrical isolation between the substrate support structure 103 and the ground ring structure 133, is chemically compatible with the material present in the plasma processing area 109 during the operation of the chamber 102, and has mechanical and thermal stability in the presence of the temperature and pressure present in the plasma processing area 109 during the operation of the chamber 102.

[0094] The grounding ring structure 133 is formed of a conductive material and is electrically connected to the chamber wall 105 so as to be electrically connected to a reference ground potential. In some embodiments, the grounding ring structure 133 is formed of a metallic material (in particular, aluminum or stainless steel, or an alloy thereof). It should be understood that in various embodiments, the grounding ring structure 133 may be formed of essentially any material that has sufficient conductivity to provide a reference ground potential surface around the substrate support structure 103, is chemically compatible with the material present in the plasma processing area 109 during the operation of the chamber 102, and has mechanical and thermal stability in the presence of the temperature and pressure present in the plasma processing area 109 during the operation of the chamber 102.

[0095] Figure 1D is an isometric view showing a substrate support structure 103, which includes an edge ring structure 131 and a grounding ring structure 133 arranged to surround the substrate support structure 103 according to several embodiments, and a focus ring structure 135 arranged above and around the upper surface of the substrate support structure 103. A vertical cross-sectional view of the focus ring structure 135 is shown in Figure 1B according to several embodiments. In some embodiments, the focus ring structure 135 is arranged within the plasma processing chamber 102 so as to surround the plasma processing area 109. The focus ring structure 135 includes a ring portion 135A configured as a hollow straight cylinder with height H1, inner diameter ID1, and wall thickness WT1. The focus ring structure 135 may further include three radial extension structures 135B1, 135B2, and 135B3 configured to extend radially outward from the outer surface of the ring portion 135A. The three radial extensions 135B1, 135B2, and 135B3 are spaced apart along the outer circumference of the ring portion 135A so as to provide stable vertical movement of the ring portion 135A by the three radial extensions 135B1, 135B2, and 135B3. The three radial extensions 135B1, 135B2, and 135B3 are configured to engage with the three respective lift components 137A, 137B, and 137C to raise and lower the focus ring structure 135 relative to the substrate support structure 103 when the focus ring structure 135 is placed in the plasma processing chamber 102. For example, the focus ring structure 135 can be lifted relative to the substrate support structure 103 in preparation for placing the substrate 101 onto the substrate support structure 103 and in preparation for removing the substrate 101 from the substrate support structure 103. Figure 1E shows the configuration of Figure 1D in which the focus ring structure 135 is in a raised position relative to the substrate support structure 103, according to one of several embodiments. During processing of the substrate 101, the focus ring structure 135 can be lowered relative to the substrate support structure 103 to position the focus ring structure 135 close to the upper surface of the substrate 101, as shown in Figure 1D.

[0096] In some embodiments, the focus ring structure 135 is configured to assist in focusing ions generated in the plasma within the plasma processing region 109 onto the surface of the substrate 101 held on the substrate support structure 103. The ion focusing provided by the focus ring structure 135 can enhance processing uniformity across the substrate 101 and at the edges of the substrate 101. In some embodiments, the focus ring structure 135 is formed of a ceramic material. In some embodiments, the focus ring structure 135 is formed of aluminum oxide. In some embodiments, the focus ring structure 135 is formed of silicon carbide. It should be understood that in various embodiments, the focus ring structure 135 may be formed of essentially any material that has suitable electrical properties to enable focusing ions from the plasma within the plasma processing region 109 toward the substrate 101 during the operation of the chamber 102, is chemically compatible with the materials present in the plasma processing region 109 during the operation of the chamber 102, and has mechanical and thermal stability in the presence of the temperature and pressure present in the plasma processing region 109 during the operation of the chamber 102.

[0097] In some embodiments, the liner structure 139 is positioned within the plasma processing chamber 102. Figure 1F is an isometric view showing an example of the liner structure 139 positioned on the grounding ring structure 133 according to some embodiments. In some embodiments, the liner structure 139 is configured to be in physical contact with the grounding ring structure 133. The liner structure 139 is configured to extend around at least a portion of the plasma processing area 109 within the plasma processing chamber 102. The liner structure 139 has an inner surface 139A facing the plasma processing area 109. In some embodiments, the liner structure 139 is formed of a ceramic material. In some embodiments, the liner structure 139 is formed of aluminum oxide. In some embodiments, the liner structure 139 is formed of silicon carbide. It should be understood that in various embodiments, the liner structure 139 may be formed of essentially any material that has suitable electrical properties to accommodate the generation of plasma in the plasma processing area 109 during the operation of the chamber 102, is chemically compatible with the material present in the plasma processing area 109 during the operation of the chamber 102, and has mechanical and thermal stability in the presence of the temperature and pressure present in the plasma processing area 109 during the operation of the chamber 102.

[0098] In some embodiments, the liner structure 139 is configured to substantially cover and / or protect the inner surface of the chamber wall 105 from material present in the plasma processing area 109 during the operation of the chamber 102. More specifically, the liner structure 139 may be formed as a hollow straight cylinder and may have a plurality of notches (i.e., openings) in which components can extend through the liner structure 139 and / or a view is provided through the liner structure 139. For example, the liner structure 139 has an opening 140A for exposing the plasma processing area 109 to the exhaust passage 121. The liner structure 139 also has openings 140B, 140C, and 140D for vertical movement of three radial extension structures 135B1, 135B2, and 135B3 of the focus ring structure 135 without obstruction. Furthermore, the liner structure 139 has an opening 140E at the position of opening 106A in the wall 105 of the chamber 102, in preparation for inserting the substrate 101 into the chamber 102 and removing the substrate 101 from the chamber 102. The liner structure 139 also has an opening 140F at the position of opening 106B in the wall 105 of the chamber 102, so that the inside of the chamber 102 can be seen without obstruction.

[0099] During processing of the substrate 101 in chamber 102, non-volatile and / or low-volatile by-products may be generated within the plasma processing area 109. In some processes, large amounts of these non-volatile and / or low-volatile by-products may be generated. For example, in some processes, when a lead zirconate titanate (PZT) film present on the substrate 101 (e.g., a silicon substrate) is etched, a large amount of non-volatile and / or low-volatile by-products is generated in response. In another example, when a platinum-based film present on the substrate 101 is etched, a large amount of non-volatile and / or low-volatile by-products is generated in response. It should also be understood that large amounts of non-volatile and / or low-volatile by-products may be generated in response to other plasma-based processes performed on the substrate 101. Non-volatile and / or low-volatile by-products may adhere to the surfaces of various components within chamber 102. However, non-volatile and / or low-volatile by-products may not adhere well to or be retained on the surfaces of various components within the chamber 102, leading to flaky detachment and / or exfoliation of non-volatile and / or low-volatile by-products from the surfaces of various components within the chamber 102. Flaky detachment or exfoliated non-volatile and / or low-volatile by-products from the surfaces within the chamber 102 can cause serious problems leading to large yield losses, such as an increase in the number of particles on the substrate 101 that later cause device defects. Flaky detachment or exfoliated non-volatile and / or low-volatile by-products can also cause problems if they remain on the upper surface of the substrate support structure 103 or on the window used for optical observation of the plasma processing area 109, such as for optical endpoint detection. Flaky detachment or exfoliated non-volatile and / or low-volatile by-products can also cause problems if they are sucked into the exhaust pump and associated exhaust mechanical systems.

[0100] Furthermore, the generation of non-volatile and / or low-volatile byproducts that tend to flake or peel off from the surface of components within chamber 102 may necessitate frequent shutdowns of chamber 102 to clean these byproducts before they accumulate to a level where flake and / or peeling is likely to occur. It should be understood that frequent shutdowns of chamber 102 reduce the processing throughput of substrate 101. In addition, non-volatile and / or low-volatile byproducts may be resistant to waferless automated cleaning processes, meaning that chamber 102 may need to be opened and cleaned manually, which is time-consuming and costly. Moreover, components within chamber 102 may be formed from aluminum-based materials with external coatings, and these coatings may not withstand frequent cleaning processes. For example, some components within chamber 102 may be formed from anodized aluminum and / or have coatings (such as yttria coatings). Aggressive cleaning required to remove non-volatile and / or low-volatile byproducts from these components may strip the anodized / coated layer, requiring the component to be re-anodized / re-coated after cleaning, leading to increased costs. Furthermore, each time a component needs to be re-anodized / re-coated, the component's base material is consumed, thereby shortening its service life. In other words, there is a limit to the number of re-anodized / re-coating cycles each component can undergo. And each time a component needs to be invasively cleaned and / or re-anodized / re-coated, it may be damaged and rendered unusable, incurring further costs.

[0101] Components and processes for controlling non-volatile and / or low-volatile byproducts generated within the plasma processing area 109 during the execution of various plasma-based treatments on the substrate 101 are disclosed herein. In some embodiments, various components within the chamber 102 are formed of ceramic material and are formed to have roughened / textured outer surfaces. For example, in various embodiments, the upper window structure 107 and / or liner structure 139 and / or edge ring structure 131 may be formed of ceramic material and are formed to have roughened / textured outer surfaces exposed to the plasma processing area 109. The roughened / textured outer surfaces promote the adhesion and retention of non-volatile and / or low-volatile byproducts in the chamber 102. inside It should be understood that by adhering to and retaining on the surface of the components, the chamber 102 can be operated for longer periods between cleaning cycles. For example, by using ceramic components with roughened / textured outer surfaces in the chamber 102, the mean time to clean (MTBC) of the chamber 102 can be extended by up to 400% or more by preventing non-volatile and / or low-volatile byproducts from flaking or peeling onto the substrate 101 and substrate support structure 103. Therefore, by using ceramic components with roughened / textured outer surfaces in the chamber 102, the defect density on the substrate 101 can be reduced, productivity can be improved (i.e., the availability of the chamber 102 can be extended and the processing throughput of the substrate 101 by the chamber 102 can be increased), and component life can be improved by reducing the frequency of component cleaning and component readjustment cycles.

[0102] Furthermore, by using uncoated ceramic materials for various components within the chamber 102 (such as the upper window structure 107 and / or the liner structure 139 and / or the edge ring structure 131), surface roughness can be controlled more effectively compared to anodized / coated materials. More specifically, since anodizing / coating of components must be done after the roughening treatment of the components is completed, it is difficult to predict and control how the application of anodizing / coating will affect the surface roughness previously applied to the components. For example, applying a coating to the surface of a roughened / textured component may, conversely, make the surface smoother. Also, applying a coating to the surface of a component after the surface has been roughened / textured may cause damage to the component by introducing stress on the surface of the component that can lead to cracking. In addition, since the material of ceramic components is not consumed as much during the refurbishment / cleaning treatment and subsequent re-roughening / re-texturing treatment, ceramic components recover more easily than non-ceramic components after many refurbishment / cleaning cycles. Because the bulk ceramic components can withstand numerous repair / cleaning / re-roughening / re-texturing cycles, the resilience of the ceramic components to invasive repair / cleaning processes provides cost savings.

[0103] In some embodiments, for example, various components or parts thereof within the chamber 102, such as the lower surface of the upper window structure 107 exposed to the plasma processing area 109, and / or the liner structure 139, and / or the edge ring structure 131, are roughened / textured to have an average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches. In some embodiments, for example, various components or parts thereof within the chamber 102, such as the lower surface of the upper window structure 107 exposed to the plasma processing area 109, and / or the liner structure 139, and / or the edge ring structure 131, are roughened / textured to have an average surface roughness (Ra) of about 500 microinches (about 12.7 micrometers). The average surface roughness (Ra) is the arithmetic mean of the absolute values ​​of the deviations of the surface profile height from the surface mean line, and is recorded within the evaluation length along the surface as shown in Equation 1:

[0104]

number

[0105] Here, L = evaluation length and Z(x) = profile height function.

[0106] In various embodiments, surface-textured plasma treatment chamber components are disclosed. These surface-textured plasma treatment chamber components include ceramic components configured to be placed within a plasma treatment chamber (e.g., within chamber 102). In some embodiments, the ceramic components of the surface-textured plasma treatment chamber components are formed from aluminum oxide. In some embodiments, the ceramic components of the surface-textured plasma treatment chamber components are formed from silicon carbide. However, it should be understood that in various embodiments, the ceramic components of the surface-textured plasma treatment chamber components may be formed from ceramic materials other than aluminum oxide or silicon carbide.

[0107] The ceramic component comprises at least one roughened surface oriented to be exposed to plasma processing byproducts when the ceramic component is placed in the plasma processing chamber during operation of the plasma processing chamber. The at least one roughened surface is configured to promote the adhesion of plasma processing byproducts to the ceramic component. The average surface roughness (Ra) of the at least one roughened surface is configured to promote the adhesion of non-volatile and / or low-volatile plasma processing byproducts to the at least one roughened surface. In some embodiments, the at least one roughened surface has an average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches. In some embodiments, the at least one roughened surface has an average surface roughness (Ra) of about 500 microinches (about 12.7 micrometers). Also, in some embodiments, the ceramic bare material forming the ceramic component is exposed on at least one roughened surface of the ceramic component.

[0108] In some embodiments, improved adhesion of non-volatile and / or low-volatile byproducts to at least one roughened surface is influenced at the molecular level through increased van der Waals forces. In contrast to at least one roughened surface, surfaces with low surface roughness (i.e., smooth constituent surfaces) generate high surface tension energy that acts to repel the adhesion of plasma-treated byproduct ions and / or molecules. In some embodiments, at least one roughened surface configured to promote the adhesion of plasma-treated byproducts to a ceramic constituent may have a high contact angle and low surface tension to promote the adhesion of plasma-treated byproduct ions and / or molecules. Additionally, at least one roughened surface on a ceramic constituent results in less flake and / or detachment of non-volatile and / or low-volatile byproducts from the ceramic constituent.

[0109] In some embodiments, at least one roughened surface of a ceramic component is roughened by media blasting. In other words, a ceramic component undergoes media blasting to form at least one roughened surface on the ceramic component. In various embodiments, media blasting may be specified and performed to increase surface roughness, create a high contact angle on the surface, and increase the overall surface area of ​​the component undergoing media blasting. In various embodiments, media blasting may be specified and performed to affect a ceramic component in which at least one roughened surface is produced, with media including, in particular, one or more of the following media types: aluminum oxide, silicon carbide, crushed glass grit, glass beads, ceramics, glass, walnut shells, pumice, steel grit, steel shot, aluminum shot, zinc shot, copper shot, cut wire, garnet, silica sand, and staurolite. It should be understood that media blasting applies a predetermined roughness / texture substantially uniformly across the target surface area of ​​the component. Furthermore, in some embodiments, the media blasting process may be performed in conjunction with a patterned mask designed to generate a predetermined surface topography on a target surface area of ​​the component. For example, the patterned mask may include a distribution of opening regions through which the media blast material can reach the surface of the component when the patterned mask is placed on the component. The media blast material removes some of the component material within the opening regions of the patterned mask, but not the component material protected by the patterned mask, thereby creating a predetermined surface topography on the target surface area of ​​the component.

[0110] It should be understood that the ability to repair components made of uncoated ceramics having one or more roughened / textured outer surfaces is improved. For example, to repair such components, media blasting can be performed (or repeated) on the component to clean it and re-roughen / re-texturize its outer surface. By repairing components by media blasting without recoating the component, the cost of coating the component is eliminated and the generation of stress on the component due to coating, which could lead to mechanical failure of the component, is avoided. Furthermore, components can be repaired many times (e.g., 20 or more times) by media blasting without compromising the mechanical integrity of the component by removing excess component material. In addition to, or as an alternative to, media blasting, at least one rough surface may be formed at least partially by performing knurling on the ceramic component before firing the ceramic component.

[0111] In some embodiments, the surface-textured plasma processing chamber component described above is the upper window structure 107 of the chamber 102. Figure 2 is an isometric view showing the bottom surface 107A of the upper window structure 107 according to some embodiments. The upper window structure 107 is a ceramic component installed in the chamber 102 with its bottom surface 107A oriented to face the plasma processing area 109. Similar to the ceramic component described above, in various embodiments, the upper window structure 107 may be formed of aluminum oxide, silicon carbide, or essentially any other ceramic material that is chemically, mechanically, thermally, and electrically suitable for functioning as the upper window structure 107 during the operation of the chamber 102. In some embodiments, the upper window structure 107 is also configured to function as a gas distribution plate that provides a supply of one or more processing gases to the plasma processing area 109. In these embodiments, the upper window structure 107 may have an internal arrangement of gas supply channels configured to direct the flow of one or more processing gases from one or more input ports located on the outside of the upper window structure 107 (such as the top surface or edge surface of the upper window structure 107) to one or more output ports 107B located on the bottom surface 107A of the upper window structure 107. In this way, one or more processing gases may flow into the plasma processing area 109 through the upper window structure 107, and the upper window structure 107 functions to spatially distribute the supply of one or more processing gases to the plasma processing area 109 based on the spatial position and flow state (open or closed) of the one or more output ports 107B.

[0112] The bottom surface 107A of the upper window structure 107 includes at least one rough surface 107C oriented to be exposed to plasma processing byproducts when the upper window structure 107 is placed inside the chamber 102 during the operation of the chamber 102. In some embodiments, the bottom surface 107A of the upper window structure 107 includes an outer ring-shaped region 107D configured to engage with a sealing component when the upper window structure 107 is installed inside the chamber 102. In some embodiments, the outer ring-shaped region 107D is smoothed to have an average surface roughness (Ra) of about 20 microinches (about 0.508 micrometers). In some embodiments, the area of ​​the bottom surface 107A inside the outer ring-shaped region 107D is at least one rough surface 107C roughened / textured to have an average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches. In some embodiments, at least one roughened surface 107C is roughened / textured to have an average surface roughness (Ra) of about 500 microinches. In some embodiments, the upper window structure 107 remains in the form of an uncoated bare ceramic component while the upper window structure 107 is being used within the chamber 102, after at least one roughened surface 107C has been formed on the bottom surface 107A.

[0113] In some embodiments, the surface-textured plasma treatment chamber component described above is a liner structure 139. Figure 3 is an isometric view showing the liner structure 139 according to some embodiments. The liner structure 139 is configured to extend around at least a portion of the plasma treatment area 109 within the chamber 102. In some embodiments, the liner structure 139 has an inner surface 139A which is at least one roughened surface oriented to be exposed to plasma treatment byproducts when the liner structure 139 is placed inside the chamber 102 during the operation of the chamber 102. In some embodiments, the entire liner structure 139, including the inner surface 139A and the outer surface 139B, is roughened / textured to facilitate the adhesion of plasma treatment byproducts to the liner structure 139.

[0114] In some embodiments, the liner structure 139 is a ceramic component installed within the chamber 102 to cover and protect the inner wall of the chamber 102. Similar to the ceramic components described above, in various embodiments, the liner structure 139 may be formed of aluminum oxide, silicon carbide, or essentially any other ceramic material that is chemically, mechanically, thermally, and electrically compatible with the function of the liner structure 139 during the operation of the chamber 102. In some embodiments, the liner structure 139 remains in the form of an uncoated bare ceramic component during its use within the chamber 102, after at least one roughened surface has been formed on the liner structure 139. In some embodiments, the liner structure 139 is roughened / textured to have an average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches.

[0115] In some embodiments, the surface textured plasma processing chamber component described above is a ring structure for placement within the chamber 102, where the ring structure is configured to circumscribe a substrate support structure 103 within the chamber 102. In various embodiments, the ring structure may be, for example, one or both of a focus ring structure 135 and an edge ring structure 131. The ring structure is characterized by having at least one processing exposure surface, which is either the inner surface of the ring structure or the upper surface of the ring structure. The at least one processing exposure surface is at least one rough surface oriented to be exposed to plasma processing byproducts when the ring structure is placed within the chamber 102 during the operation of the chamber 102.

[0116] Figure 4 is an isometric view showing the edge ring structure 131 according to several embodiments. The edge ring structure 131 is shown to have a processing exposure surface 131A (light gray in Figure 4), which is at least one roughened surface oriented to be exposed to plasma processing byproducts when the edge ring structure 131 is placed inside the chamber during the operation of the chamber 102. In some embodiments, only the processing exposure surface 131A of the edge ring structure 131 is roughened / textured. However, in some embodiments, portions of the edge ring structure 131 other than the processing exposure surface 131A may also be roughened / textured to facilitate manufacturing. In some embodiments, the edge ring structure 131 is a ceramic component. Similar to the ceramic components described above, in various embodiments, the edge ring structure 131 may be formed of aluminum oxide, silicon carbide, or essentially any other ceramic material that is chemically, mechanically, thermally, and electrically suitable for functioning as the edge ring structure 131 during the operation of the chamber 102. In some embodiments, the edge ring structure 131 remains in the form of an uncoated bare ceramic component during use of the edge ring structure 131 in the chamber 102 after at least one roughened surface has been formed on the edge ring structure 131. In some embodiments, the treated exposed surface 131A of the edge ring structure 131 is roughened / textured to have an average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches. In some embodiments, the treated exposed surface 131A of the edge ring structure 131 is roughened / textured to have an average surface roughness (Ra) of about 500 microinches.

[0117] Figure 5 is an isometric view showing the focus ring structure 135 according to several embodiments. In some embodiments, the inner surface 135A1 of the ring portion 135A of the focus ring structure 135 is at least one rough surface oriented to be exposed to plasma processing byproducts when the focus ring structure 135 is placed inside the chamber 102 during the operation of the chamber 102. In some embodiments, in addition to the inner surface 135A1 of the ring portion 135A, the upper surfaces of the radial extension structures 135B1, 135B2, and 135B3 are also part of at least one rough surface oriented to be exposed to plasma processing byproducts when the focus ring structure 135 is placed inside the chamber 102 during the operation of the chamber 102. In some embodiments, the entire ring portion 135A of the focus ring structure 135 (including both the inner surface 135A1 and the outer surface 135A2 of the ring portion 135A) and the upper surfaces of the radial extension structures 135B1, 135B2, and 135B3 are at least one rough surface oriented to be exposed to plasma processing byproducts when the focus ring structure 135 is placed inside the chamber 102 during the operation of the chamber 102. In some embodiments, the entire outer surface of the focus ring structure 135, including the ring portion 135A and the radial extension structures 135B1, 135B2, and 135B3, constitutes at least one rough surface oriented to be exposed to plasma processing byproducts when the focus ring structure 135 is placed inside the chamber 102 during the operation of the chamber 102.

[0118] In some embodiments, the focus ring structure 135 is a ceramic component. Similar to the ceramic component described above, in various embodiments, the focus ring structure 135 may be formed of aluminum oxide, silicon carbide, or essentially any other ceramic material that is chemically, mechanically, thermally, and electrically suitable for functioning as the focus ring structure 135 during the operation of the chamber 102. In some embodiments, the focus ring structure 135 remains in the form of an uncoated bare ceramic component during the use of the focus ring structure 135 in the chamber 102 after at least one roughened surface has been formed on the focus ring structure 135. In some embodiments, one or more processed exposed surfaces of the focus ring structure 135 are roughened / textured to have an average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches.

[0119] In some embodiments, the surface-textured plasma treatment chamber components described above may be non-ceramic components (such as the grounding ring structure 133). Figure 6 is an isometric view showing the grounding ring structure 133 according to some embodiments. The grounding ring structure 133 comprises several treatment exposure surfaces 133A, 133B, 133C that are exposed to plasma treatment byproducts during the operation of the chamber 102. The treatment exposure surfaces 133A, 133B, 133C may be roughened / textured in the same manner as described above for ceramic components to facilitate the adhesion of byproducts to the grounding ring structure 133. In some embodiments, the grounding ring structure 133 is formed of aluminum, stainless steel, or another conductive material that is chemically, mechanically, thermally, and electrically compatible with the plasma treatment operation performed in the chamber 102. In some embodiments, the media blasting process described above may be used to roughen / texturize the treatment exposure surfaces 133A, 133B, 133C of the grounding ring structure 133. However, the type of media used for the grounding ring structure 133 may differ from that used for the ceramic components. For example, a media with greater hardness may be used in the media blasting process to roughen / texture the treated exposed surfaces 133A, 133B, and 133C of the grounding ring structure 133. In some embodiments, the treated exposed surfaces 133A, 133B, and 133C of the grounding ring structure 131 are roughened / textured to have an average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches. In some embodiments, the treated exposed surfaces 133A, 133B, and 133C of the grounding ring structure 133 are roughened / textured to have an average surface roughness (Ra) of about 500 microinches. In some embodiments, the treated exposed surfaces 133A, 133B, and 133C of the grounding ring structure 133 remain uncoated after the roughening / texturing process while the grounding ring structure 133 is in use in the chamber 102.However, in some embodiments, the treatment exposed surfaces 133A, 133B, and 133C of the grounding ring structure 133 are coated after undergoing a roughening / texturing treatment, and the coated grounding ring structure 133 is then utilized within the chamber 102. Also, in embodiments in which the treatment exposed surfaces 133A, 133B, and 133C of the grounding ring structure 133 are coated, the roughening / texturing of the treatment exposed surfaces 133A, 133B, and 133C performed before coating may be specified to ensure that a predetermined amount of average surface roughness (Ra) remains on the treatment exposed surfaces 133A, 133B, and 133C after coating. In some embodiments, the coating applied to the roughened / textured treatment exposed surfaces 133A, 133B, and 133C of the grounding ring structure 133 is one of the following: an yttria coating, an anodized coating, or another type of coating that is chemically, mechanically, thermally, and electrically compatible with the plasma treatment performed within the chamber 102.

[0120] It should be understood that the embodiments disclosed herein include embodiments of a plasma processing chamber (e.g., chamber 102) having one or more components having at least one processing exposure surface configured to have a surface roughness / texture that promotes the adhesion of plasma processing byproducts to the processing exposure surface. It should also be understood that the embodiments disclosed herein include the operation of a plasma processing chamber having one or more components having a roughened / textured processing exposure surface in a plasma processing operation that produces non-volatile and / or low-volatile byproducts. For example, Figure 7 is a flowchart of a method for plasma processing of a substrate according to several embodiments. The method comprises operation 701 for preparing a plasma processing chamber (i.e., chamber 102) having a substrate support structure 103 and an upper window structure 107. The substrate support structure 103 is configured to hold a substrate 101 and expose it to plasma generated in a plasma processing region 109. The upper window structure 107 is positioned above the substrate support structure 103 so as to establish a plasma processing region 109 between the substrate support structure 103 and the upper window structure 107. The upper window structure 107 is formed of a ceramic material and has a bottom surface 107A facing the plasma processing area 109. In various embodiments, the upper window structure 107 is formed of aluminum oxide, silicon carbide, or another ceramic material that is chemically, mechanically, thermally, and electrically compatible with the operation of the chamber 102. The bottom surface 107A of the upper window structure 107 has a surface roughness / texture that facilitates the adhesion of plasma processing byproducts to the bottom surface 107A. In some embodiments, the bottom surface 107A of the upper window structure 107 has an average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches. In some embodiments, the bottom surface 107A of the upper window structure 107 has an average surface roughness (Ra) of about 500 microinches. In some embodiments, the bottom surface 107A of the upper window structure 107 has an average surface roughness (Ra) greater than about 500 microinches. In some embodiments, the ceramic bare material forming the upper window structure 107 is exposed at the bottom surface 107A of the upper window structure 107.

[0121] The method further comprises an operation 703 for generating plasma in a plasma processing region 109, the plasma components interacting with a material on the substrate 101 to produce plasma processing byproducts, some of which adhere to the bottom surface 107A of the upper window structure 107. In some embodiments, the material on the substrate 101 is a lead zirconate titanate (PZT) film. In some embodiments, the material on the substrate 101 is a platinum (Pt) film. In some embodiments, the material on the substrate 101 is a film that, when exposed to the plasma generated in operation 703, causes a large amount of byproduct deposition in the chamber 102.

[0122] In some embodiments, the step of generating plasma in operation 703 may include the step of applying high-frequency power to the processing gas in the plasma processing area 109. In some embodiments, the applied high-frequency power may be in the range of about 400 watts (W) to about 1250 watts (W). However, it should be understood that in various embodiments, the applied high-frequency power may be less than 400 watts or greater than 1250 watts (W). In some embodiments, the high-frequency power is applied by a high-frequency signal having a frequency of about 13.56 MHz. However, it should be understood that in various embodiments, the high-frequency power may be applied by a high-frequency signal having a frequency different from 13.56 MHz (W). Furthermore, in some embodiments, the method may include an operation for generating a bias voltage in the substrate support structure 103. In some embodiments, the bias voltage is generated in the range of about 100 volts (V) to about 600 V (V). However, it should be understood that in various embodiments, the bias voltage may be less than 100 V or greater than 600 V (V). Furthermore, in some embodiments, the bias voltage may be generated by a high-frequency signal having a frequency of about 13.56 MHz (W). However, it should be understood that in various embodiments, the bias voltage may be generated by a high-frequency signal having a frequency different from 13.56 MHz. Also, in various embodiments, the bias voltage may be generated by a DC source.

[0123] Furthermore, in some embodiments, the method may include an operation to maintain the temperature of the substrate support structure 103 within a range of approximately 40°C to approximately 100°C. However, it should be understood that in various embodiments, the temperature of the substrate support structure 103 may be maintained at a value less than 40°C or greater than 100°C. Furthermore, in some embodiments, the method may include an operation to maintain the pressure within the plasma processing area 109 within a range of approximately 5 mmTorr to approximately 50 mmTorr. However, it should be understood that in various embodiments, the pressure within the plasma processing area 109 may be maintained at a value less than 5 mmTorr or greater than 50 mmTorr.

[0124] In some embodiments, the step of generating plasma in operation 703 includes supplying a process gas to the plasma processing area 109, where the process gas is one or more of chlorine (Cl2), boron trichloride (BCl3), argon (Ar), carbon tetrafluoride (CF4), oxygen (O2), trifluoromethane (CHF3), and sulfur hexafluoride (SF6). In some embodiments, the step of generating plasma in operation 703 includes supplying chlorine (Cl2) to the plasma processing area 109 at a flow rate in the range of about 20 standard cubic centimeters per minute (sccm) to about 300 sccm. In some embodiments, the step of generating plasma in operation 703 includes supplying boron trichloride (BCl3) to the plasma processing area 109 at a flow rate in the range of about 50 sccm to about 300 sccm. In some embodiments, the step of generating plasma in operation 703 includes supplying argon (Ar) to the plasma processing area 109 at a flow rate in the range of about 50 sccm to about 300 sccm. In some embodiments, the step of generating plasma in operation 703 includes supplying carbon tetrafluoride (CF4) to the plasma processing area 109 at a flow rate in the range of about 50 sccm to about 200 sccm. In some embodiments, the step of generating plasma in operation 703 includes supplying oxygen (O2) to the plasma processing area 109 at a flow rate in the range of about 20 sccm to about 300 sccm. In some embodiments, the step of generating plasma in operation 703 includes supplying trifluoromethane (CHF3) to the plasma processing area 109 at a flow rate in the range of about 50 sccm to about 300 sccm. In some embodiments, the step of generating plasma in operation 703 includes supplying sulfur hexafluoride (SF6) to the plasma processing area 109 at a flow rate in the range of about 50 sccm to about 300 sccm.

[0125] The method for plasma treatment of a substrate shown in Figure 7 may further comprise a step utilizing a liner structure 139 within a chamber 102, where the liner structure 139 is configured to extend around at least a portion of the plasma treatment area 109 within the chamber 102. In this method, the liner structure 139 has an inner surface 139A oriented to be exposed to plasma treatment byproducts. The inner surface 139A of the liner structure 139 has a surface roughness that facilitates the adhesion of plasma treatment byproducts to the inner surface 139A of the liner structure 139. In various embodiments, the liner structure 139 is formed of aluminum oxide, silicon carbide, or another ceramic material that is chemically, mechanically, thermally, and electrically compatible with the operation of the chamber 102. In some embodiments, the inner surface 139A of the liner structure 139 has an average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches. In some embodiments, the inner surface 139A of the liner structure 139 has an average surface roughness (Ra) of about 500 microinches. In some embodiments, the inner surface 139A of the liner structure 139 has an average surface roughness (Ra) greater than about 500 microinches. In some embodiments, the ceramic bare material forming the liner structure 139 is exposed on the inner surface 139A of the liner structure 139.

[0126] It should be understood that the use of the uncoated ceramic liner structure 139, which has a processed surface roughness / texture that enables and promotes the adhesion of plasma treatment by-products, eliminates the difficulties and costs associated with refurbishing coated liner structures, such as hard anodized aluminum liner structures with yttria coatings. Furthermore, the use of the uncoated ceramic liner structure 139, which has a processed surface roughness / texture that enables and promotes the adhesion of plasma treatment by-products, extends the life of the liner structure 139 by eliminating the increased risk of mechanical failures that can occur during refurbishment and recoating processes, such as those that occur during refurbishment and recoating processes when used in conjunction with hard anodized aluminum chamber liner structures with yttria coatings, which are caused by stresses induced within the liner structure 139 during refurbishment and recoating processes.

[0127] The method for plasma treatment of a substrate shown in Figure 7 may further include a step utilizing a ring structure within a chamber 102, where the ring structure is configured to surround a substrate support structure 103 within the chamber 102. The ring structure has at least one treatment-exposed surface, which is either or both of the inner and upper surfaces of the ring structure. The treatment-exposed surface is oriented to be exposed to plasma treatment byproducts. The treatment-exposed surface of the ring structure also has a surface roughness that allows and promotes the adhesion of plasma treatment byproducts to the treatment-exposed surface of the ring structure. In some embodiments, the ring structure is a focus ring structure 135. In some embodiments, the ring structure is an edge ring structure 131. In some embodiments, the ring structure is a ground ring structure 133. In some embodiments, the ring structure is formed of aluminum oxide, silicon carbide, or another ceramic material that is chemically, mechanically, thermally, and electrically compatible with the operation of the chamber 102. In some embodiments where the ring structure is formed of a ceramic material, the ceramic bare material forming the ring structure is exposed on the roughened / textured treatment-exposed surface of the ring structure. In some embodiments, the ring structure is formed of a conductive material, such as aluminum, stainless steel, or another metallic material that is chemically, mechanically, thermally, and electrically compatible with the operation of chamber 102. In some embodiments where the ring structure is formed of a conductive material, the roughened / textured treatment-exposed surface of the ring structure may remain uncoated when used in chamber 102. Alternatively, in some embodiments where the ring structure is formed of a conductive material, the roughened / textured treatment-exposed surface of the ring structure may be coated when used in chamber 102. In some embodiments, the coating applied to the conductive ring structure is an yttria coating, anodizing, or another type of coating that is chemically, mechanically, thermally, and electrically compatible with the operation of chamber 102. In some embodiments, the treatment-exposed surface of the ring structure has an average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches.In some embodiments, the treated surface of the ring structure has an average surface roughness (Ra) of about 500 microinches. In some embodiments, the treated surface of the ring structure has an average surface roughness (Ra) greater than about 500 microinches.

[0128] It has been demonstrated that using components with processed surface roughness / texture that promote the adhesion of non-volatile and / or low-volatile byproducts to the components within Chamber 102 provides numerous processing improvements. For example, in PZT and Pt etching processes, which generate large amounts of non-volatile and / or low-volatile byproducts, using components with processed surface roughness / texture within Chamber 102 showed the following improvements: • Improvement of etching uniformity on substrate 101 • Better etching control to reduce undesirable removal of the landing layer (Pt) during the main etching process or over-etching process. • Better etching reproducibility between substrates and between lots. • Better etching results due to the flaky exfoliation and / or minimization of exfoliation of non-volatile and / or low-volatile by-products onto the substrate support structure 103. This helps to avoid clamping problems of the substrate 101. • Reduction of photoresist reticulation • Better etching profile control due to better consistency of photoresist corrosion • Minimizing etching defects on substrate 101 caused by micromasking. • Prevention of clamping problems of substrate 101 due to insufficient clamping force. • Better heat removal and cooling of the back of the substrate 101 • Prevention of hot spots on the substrate 101 to be etched. • Better retention of non-volatile and / or low-volatile etching byproducts onto the upper window structure 107, liner structure 139, grounding ring structure 133, and edge ring structure 131. This is due to the substrate support structure 103and / or helps prevent the flaky peeling and / or detachment of non-volatile and / or low-volatile etching byproducts onto the substrate 101. • Cost reduction by eliminating the external coating on the upper window structure 107 and liner structure 139.

[0129] Figure 8 is a flowchart showing a method for manufacturing surface-textured plasma processing chamber components according to several embodiments of the present invention. The method comprises operation 801 for forming a ceramic component to be placed inside a plasma processing chamber (e.g., inside chamber 102), wherein the ceramic component has at least one processing-exposed surface. In some embodiments, the ceramic component is formed of aluminum oxide, silicon carbide, or another ceramic material that is chemically, mechanically, thermally, and electrically compatible with the operation of chamber 102. In various embodiments, the ceramic component is one of an upper window structure 107, a liner structure 139, a focus ring structure 135, or an edge ring structure 131.

[0130] The method further comprises an operation 803 for roughening at least one treatment-exposed surface to have a surface roughness that facilitates the adhesion of plasma treatment byproducts to at least one treatment-exposed surface. In some embodiments, operation 803 is performed to impart an average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches to at least one treatment-exposed surface of the ceramic component. In some embodiments, operation 803 is performed to impart an average surface roughness (Ra) greater than 500 microinches (12.7 micrometers) to at least one treatment-exposed surface of the ceramic component. In some embodiments, the operation 803 for roughening at least one treatment-exposed surface is performed by media blasting. In some embodiments, media blasting affects at least one treatment-exposed surface with a media comprising one or more of the following: aluminum oxide, silicon carbide, crushed glass grit, glass beads, ceramics, glass, walnut shells, pumice, steel grit, steel shot, aluminum shot, zinc shot, copper shot, cut wire, garnet, silica sand, and staurolite. In some embodiments, operation 801 for forming a ceramic component includes the step of performing a knurling treatment on the ceramic component before firing the ceramic component, wherein the knurling treatment is defined to impart texture to at least one treated exposed surface of the ceramic component. In some embodiments, the ceramic bare material forming the ceramic component is exposed to at least one treated exposed surface after roughening of at least one treated exposed surface in operation 803.

[0131] Figure 9 is a flowchart illustrating a method for converting a coated plasma processing chamber component into a surface-textured plasma processing chamber component according to several embodiments of the present invention. The method includes an operation 901 for stripping the coating from the ceramic component to obtain a ceramic bare material forming the ceramic component. The ceramic component is configured to be installed inside a plasma processing chamber (e.g., chamber 102). The ceramic component also has at least one processing-exposed surface. In some embodiments, the ceramic component is formed from aluminum oxide, silicon carbide, or another ceramic material that is chemically, mechanically, thermally, and electrically compatible with the operation of chamber 102. In various embodiments, the ceramic component is one of an upper window structure 107, a liner structure 139, a focus ring structure 135, or an edge ring structure 131.

[0132] The method further includes an operation 903 for roughening at least one treatment-exposed surface of a ceramic component to have a surface roughness that facilitates the adhesion of plasma treatment byproducts to at least one treatment-exposed surface. In some embodiments, operation 903 is performed to impart an average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches to at least one treatment-exposed surface of the ceramic component. In some embodiments, operation 903 is performed to impart an average surface roughness (Ra) greater than 500 microinches to at least one treatment-exposed surface of the ceramic component.

[0133] In some embodiments, operation 903 for roughening at least one treatment-exposed surface is performed by media blasting. In some embodiments, media blasting affects at least one treatment-exposed surface with a media comprising one or more of the following: aluminum oxide, silicon carbide, crushed glass grit, glass beads, ceramics, glass, walnut shells, pumice, steel grit, steel shot, aluminum shot, zinc shot, copper shot, cut wire, garnet, silica sand, and staurolite. In some embodiments, the ceramic bare material forming the ceramic component is exposed on at least one treatment-exposed surface after roughening of the at least one treatment-exposed surface in operation 903. Also in some embodiments, operation 901 for stripping the coating from the ceramic component is performed using media blasting. And in some embodiments, both operations 901 and 903 are performed simultaneously using the same media blasting.

[0134] Prior to the surface roughening / texturing embodiments disclosed herein, the focus ring structure 135 was conventionally formed to have relatively smooth, featureless surfaces on both the inner and outer surfaces of the ring portion 135A, as well as on the radial extension structures 135B1, 135B2, and 135B3. Non-volatile and / or low-volatile plasma processing byproducts do not adhere well to smooth, featureless surfaces. For example, plasma-based etching of a PZT or Pt film on a substrate 101 generates a large amount of non-volatile and / or low-volatile byproducts, which do not adhere well to a focus ring structure 135 conventionally formed to have a smooth, featureless surface. As plasma processing byproducts accumulate on the focus ring structure 135, they may flake off and / or peel off, and land on the substrate 101 and / or substrate support structure 103, given the proximity of the focus ring structure 135 to both the substrate 101 and the substrate support structure 103. When plasma processing byproducts land on the substrate 101, they can damage the substrate 101 or cause structural defects to form on the substrate 101. Furthermore, when plasma processing byproducts land on the substrate support structure 103, especially when the substrate 101 is not on the substrate support structure 103, they can interfere with proper clamping of the substrate 101 onto the substrate support structure 103, and can cause unfavorably high helium flow on the back surface of the substrate 101 (i.e., from the region between the substrate 101 and the substrate support structure 103), both of which can lead to the formation of defects on the substrate 101.

[0135] As described above, in various embodiments, surface roughening / texturing of the focus ring structure 135 can substantially improve the adhesion of plasma treatment by-products to the focus ring structure 135, thereby encouraging the accumulation of more plasma treatment by-products on the focus ring structure 135 before flake-like peeling and / or delamination of plasma treatment by-products from the focus ring structure 135 occurs. Thus, surface roughening / texturing of the focus ring structure 135 functions to delay the onset of flake-like peeling and / or delamination of plasma treatment by-products from the focus ring structure 135. However, further increasing the roughness / texture of the focus ring structure 135 may reduce its effect on extending the average time until flake-like peeling and / or delamination of plasma treatment by-products from the focus ring structure 135 occurs.

[0136] Since the focus ring structure 135 is positioned in close proximity to and above the substrate 101 and the substrate support structure 103, preventing flaky peeling and / or detachment of plasma processing byproducts from the focus ring structure 135 is a matter of particular interest. In this regard, Figure 10A is an isometric view showing a focus ring structure 135-1 having controlled surface topographic variation on the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1 in order to promote the adhesion of plasma processing byproducts to the focus ring structure 135-1 according to some embodiments of the present invention. As with the focus ring structure 135 described with respect to Figures 1D, 1E, and 5, the focus ring structure 135-1 comprises a ring portion 135-1A and three radial extension structures 135B1, 135B2, and 135B3. The ring portion 135-1A is configured as a hollow straight cylinder to surround the substrate support structure 103 in the chamber 102. The radial extension structures 135B1, 135B2, and 135B3 are configured to extend radially outward from the outer surface 135-1A2 of the ring portion 135-1A. The radial extension structures 135B1, 135B2, and 135B3 are configured to engage with the three respective lift components 137A, 137B, and 137C to enable the raising and lowering of the focus ring structure 135-1 relative to the substrate support structure 103. The focus ring structure 135-1 is formed of a ceramic material. In various embodiments, the focus ring structure 135 may be formed of aluminum oxide, silicon carbide, or essentially any other ceramic material that is chemically, mechanically, thermally, and electrically compatible with its function as the focus ring structure 135 during the operation of the chamber 102.

[0137] The inner surface 135-1A1 of the ring portion 135-1A is oriented to be exposed to plasma processing byproducts in the plasma processing region 109 when the focus ring structure 135-1 is positioned within the chamber 102 during the operation of the chamber 102. The inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1 is formed to have controlled surface topographic variations that promote the adhesion of plasma processing byproducts to the inner surface 135-1A1. In some embodiments, the controlled surface topographic variations formed on the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1 comprises a grid of convex structures 1001 extending inward toward the region enclosed by the ring portion 135-1A (i.e., extending inward toward the plasma processing region 109). In Figure 10A, the convex structures 1001 are illustrated as light-colored structures arranged in a grid pattern. A typical convex structure 1001 is shown by reference numeral 1001 in Figure 10A. Figure 10B is a perspective view showing the focus ring structure 135-1 of Figure 10A according to several embodiments. Figure 10B shows how the grid pattern of the convex structure 1001 extends around the entire circumference of the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1. Figure 10C is a top view showing the focus ring structure 135-1 of Figure 10A according to several embodiments. Figure 10D is a detail view showing the portion of reference numeral 1003 in Figure 10C according to several embodiments. As shown in Figure 10D, in some embodiments, the convex structure 1001 is formed to have a dome shape. However, it should be understood that in various embodiments, the convex structure 1001 may be formed to have essentially arbitrary geometric shapes, which leads to the promotion and enhancement of the adhesion and retention of plasma processing byproducts on the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1.

[0138] Figure 10E is a cross-sectional view showing two adjacent convex structures 1001 according to several embodiments. In some embodiments, each convex structure 1001 extends inward toward the region enclosed by the ring portion 135-1A of the focus ring structure 135-1 by a distance (d1) of about 0.5 mm to about 2 mm, or about 1 mm to about 2 mm, or about 1 mm. In some embodiments, the distance (d2) between adjacent convex structures 1001 is in the range of about 0.5 mm to about 2 mm. In some embodiments, the distance (d2) between adjacent convex structures 1001 is about 1 mm. In some embodiments, each convex structure 1001 has a base width (d3) in the range of about 1 mm to about 3 mm, or in the range of about 2 mm to about 3 mm, or about 2.5 mm, where the base width (d3) is measured radially across the convex structure 1001 on the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1. In some embodiments, the tolerance of the size and spacing of the convex structures 1001 is about 10% of the specified dimensions.

[0139] Figure 10F is a vertical cross-sectional view through its center showing a focus ring structure 135-1 according to several embodiments. In the example in Figure 10F, the convex structures 1001 are arranged in a rectangular grid containing five columns. In another embodiment, the convex structures 1001 may be arranged in a rectangular grid containing either fewer than five columns or more than five columns. Figure 10G is a diagram for forming a rectangular grid of convex structures 1001 on the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1, according to several embodiments. The rectangular grid is characterized by having convex structures 1001 arranged in a repeating rectangular pattern, as shown by rectangle 1005, both horizontally (x) and vertically (y) around the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1. In the rectangular grid, the convex structures 1001 are spaced horizontally (x) by a distance of 1007 and vertically (y) by a distance of 1009, where distance 1007 is longer than distance 1009. In some embodiments, distances 1007 and 1009 are in the range of approximately 0.5 mm to approximately 2 mm. In some embodiments, distance 1009 is approximately 1 mm. In the example in Figure 10G, the rectangular grid of convex structures 1001 has five rows (R1 to R5). However, it should be understood that in various embodiments, the rectangular grid of convex structures 1001 may have two or more rows.

[0140] In addition to the rectangular grid shown in Figure 10G, in some embodiments, the convex structures 1001 may be arranged on the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1 in any of the following configurations: square grid, hexagonal grid, parallelogram grid, or rhombic grid. Figure 10H shows how to form a square grid convex structure 1001 on the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1 according to some embodiments. The square grid is characterized by having convex structures 1001 arranged in a repeating square pattern, as shown by the square 1011, both horizontally (x) and vertically (y) around the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1. In the square grid, the convex structures 1001 are spaced horizontally (x) by a distance of 1013 and vertically (y) by a distance of 1015, where distance 1013 is substantially equal to distance 1015. In some embodiments, distances 1013 and 1015 are in the range of approximately 0.5 mm to approximately 2 mm. In some embodiments, distances 1013 and 1015 are approximately 1 mm. In the example in Figure 10H, the square grid of convex structures 1001 has five rows (R1 to R5). However, it should be understood that in various embodiments, the square grid of convex structures 1001 may have two or more rows.

[0141] Figure 10I is a diagram illustrating the formation of a hexagonal grid convex structure 1001 on the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1, according to several embodiments. The hexagonal grid is characterized by having convex structures 1001 arranged in a repeating equilateral triangle pattern in both the horizontal (x) and vertical (y) directions around the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1, with adjacent equilateral triangles in the pattern inverted in the vertical direction (y), as shown by equilateral triangles 1017. In the hexagonal grid, adjacent convex structures 1001 are spaced apart from each other by a distance 1019. In some embodiments, the distance 1019 is in the range of about 0.5 mm to about 2 mm. In some embodiments, the distance 1019 is about 1 mm. In the example in Figure 10I, the hexagonal grid of convex structures 1001 has five rows (R1 to R5). However, it should be understood that in various embodiments, the hexagonal grid of the convex structure 1001 may have two or more rows.

[0142] Figure 10J is a diagram illustrating the formation of a parallelogram grid convex structure 1001 on the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1, according to several embodiments. The parallelogram grid is characterized by having a convex structure 1001 arranged in a repeating parallelogram pattern in both the horizontal (x) and vertical (y) directions around the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1, such that adjacent parallelograms in the pattern have coincident vertices, as shown by the parallelogram 1021. The parallelogram 1021 defining the parallelogram grid has two horizontal parallel sides of equal length 1023 oriented to extend substantially horizontally (x), and two inclined parallel sides of equal length 1025 oriented to extend at an angle 1027 between the two horizontal parallel sides. In the parallelogram grid, adjacent convex structures 1001 are spaced apart by three distances 1029, 1031, and 1033. In some embodiments, the distances 1029, 1031, and 1033 are in the range of approximately 0.5 mm to approximately 2 mm. In some embodiments, the minimum distance among the distances 1029, 1031, and 1033 is approximately 1 mm. In the example in Figure 10J, the parallelogram grid of convex structures 1001 has five rows (R1 to R5). However, it should be understood that in various embodiments, the parallelogram grid of convex structures 1001 may have two or more rows.

[0143] Figure 10K shows how to form a rhombic grid of convex structures 1001 on the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1, according to several embodiments. The rhombic grid is characterized by having convex structures 1001 arranged in a repeating rhombic pattern in both the horizontal (x) and vertical (y) directions around the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1, such that adjacent rhombuses in the pattern have coincident vertices, as shown by rhombuse 1035. The rhombuse 1035 defining the rhombic grid is a parallelogram having opposite equal acute angles 1037 and opposite equal obtuse angles 1039, and four sides of equal length 1041. In the rhombic grid, adjacent convex structures 1001 are spaced apart from each other by two distances 1043 and 1045. In some embodiments, distances 1043 and 1045 are in the range of approximately 0.5 mm to approximately 2 mm. In some embodiments, the minimum distance between distances 1043 and 1045 is approximately 1 mm. In the example in Figure 10K, the rhombic grid of the convex structure 1001 has nine rows (R1 to R9). In some embodiments, the rhombic grid 1035 is configured such that convex structures 1001 in vertically adjacent rows (e.g., R1 to R9) do not overlap each other in the vertical direction (y). However, in some embodiments, the rhombic grid 1035 is configured such that convex structures 1001 in vertically adjacent rows (e.g., R1 to R9) overlap each other to some extent in the vertical direction (y). It should be understood that in various embodiments, the rhombic grid of the convex structure 1001 may have three or more rows.

[0144] In some embodiments, controlled surface topographic variation on the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1 is formed by media blasting. In some embodiments, a protective mask is applied to the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1 so as to cover the location where the convex structure 1001 is formed. The inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1 is then subjected to media blasting to form the convex structure 1001 on the inner surface 135-1A1 by removing (i.e., eroding) the layer of ceramic material forming the focus ring structure 135-1 from the inner surface 135-1A1. The protective mask is then removed. In some embodiments, the media blasting process used to form the convex structure 1001 simultaneously roughens / textures portions of the inner surface 135-1A1 between and around the convex structure 1001 in order to promote the adhesion of plasma processing byproducts to the inner surface 135-1A1. In various embodiments, the media used in the media blasting process to form the convex structure 1001 may include, in particular, one or more of the following: aluminum oxide, silicon carbide, crushed glass grit, glass beads, ceramics, glass, walnut shells, pumice, steel grit, steel shot, aluminum shot, zinc shot, copper shot, cut wire, garnet, silica sand, and staurolite. In some embodiments, the surface of the focus ring structure 135-1 other than the inner surface 135-1A1 may also be subjected to media blasting to impart a predetermined average surface roughness (Ra). For example, in some embodiments, the entire ring portion 135-1A and the upper surfaces of the radial extension structures 135B1, 135B2, and 135B3 may be subjected to media blasting to impart a predetermined average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches.

[0145] In some embodiments, the convex structure 1001 may be formed by performing a knurling process on the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1 while the ceramic material of the focus ring structure 135-1 is in a soft, green state before firing. Knurling is a processing process that forms a pattern of a certain depth within a soft, malleable material. After knurling and firing of the ceramic material of the focus ring structure 135-1, the convex structure 1001 is formed on the inner surface 135-1A1 of the ring portion 135-1A. The focus ring structure 135-1 may then be subjected to the media blasting process described above to impart a predetermined average surface roughness (Ra) to the ring portion 135-1A and the radial extension structures 135B1, 135B2, and 135B3 of the focus ring structure 135-1. The convex structure 1001 and average surface roughness (Ra) applied to the ceramic bare material of the focus ring structure 135-1 enable the use of the focus ring structure 135-1 in its uncoated, bare form within the chamber 102, eliminating the costs and risks associated with coating and recoating the focus ring structure 135-1.

[0146] It should be understood that the formation of the convex structures 1001 on the inner surface 135-1A1 of the ring portion 135-1A significantly adds to the surface area of ​​the focus ring structure 135-1 on which plasma processing byproducts can adhere. For example, in some embodiments, the arrangement of the convex structures 1001 may be specified to increase the surface area of ​​the inner surface 135-1A1 of the ring portion 135-1A by more than 400%, which provides a deliberate and highly contrasting surface topography on which a large amount of plasma processing byproducts can be deposited and adhered. Also, the mean surface roughness (Ra) imparted to the focus ring structure 135-1 by media blasting provides a robust and highly textured surface for better adhesion of non-volatile and / or low-volatile plasma processing byproducts to the focus ring structure 135-1. The enhanced adhesion and retention of plasma processing byproducts to the focus ring structure 135-1 provides an extension of the mean time to clean (MTBC) of the chamber 102, thereby improving the manufacturing throughput of the substrate 101. Furthermore, by utilizing the focus ring structure 135-1 as a bare ceramic component without a coating within the chamber 102, the service life of the focus ring structure 135-1 is extended by eliminating the need to remove the coating material from the focus ring structure 135-1 during its refurbishment.

[0147] Figure 11 is a flowchart illustrating a method for plasma treatment of a substrate according to several embodiments. The method comprises an operation 1101 for preparing a plasma treatment chamber (i.e., chamber 102) comprising a substrate support structure 103 and a focus ring structure 135-1. The focus ring structure 135-1 comprises a ring portion 135-1A formed of a ceramic material. In various embodiments, the focus ring structure 135-1 is formed of aluminum oxide, silicon carbide, or another ceramic material that is chemically, mechanically, thermally, and electrically compatible with the operation of chamber 102. The ring portion 135-1A is configured to surround the substrate support structure 103 within chamber 102. The ring portion 135-1A has an inner surface 135-1A1 oriented to be exposed to a plasma treatment region 109 where plasma treatment byproducts are generated during the operation of chamber 102. The inner surface 135-1A1 is formed to have controlled surface topographic variations that facilitate the adhesion of plasma treatment byproducts to the inner surface 135-1A1. In some embodiments, the focus ring structure 135-1 has an average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches. In some embodiments, the focus ring structure 135-1 has an average surface roughness (Ra) of about 500 microinches. In some embodiments, the ceramic bare material forming the focus ring structure 135-1 is exposed on the outer surface of the focus ring structure 135-1, and in particular on the inner surface 135-1A1 of the ring portion 135-1A of the focus ring structure 135-1.

[0148] The method further comprises an operation 1103 for generating plasma in a plasma processing region 109, the plasma components interacting with a material on the substrate 101 to produce plasma processing byproducts, some of which adhere to the focus ring structure 135-1. In some embodiments, the material on the substrate 101 is a lead zirconate titanate (PZT) film. In some embodiments, the material on the substrate 101 is a platinum (Pt) film. In some embodiments, the material on the substrate 101 is a film that, when exposed to the plasma generated in operation 1103, causes a large amount of byproduct deposition in the chamber 102.

[0149] In some embodiments, the step of generating plasma in operation 1103 may include the step of applying high-frequency power to the processing gas in the plasma processing area 109. In some embodiments, the applied high-frequency power may be in the range of about 400W to about 1250W. However, it should be understood that in various embodiments, the applied high-frequency power may be less than 400W or greater than 1250W. In some embodiments, the high-frequency power is applied by a high-frequency signal having a frequency of about 13.56MHz. However, it should be understood that in various embodiments, the high-frequency power may be applied by a high-frequency signal having a frequency different from 13.56MHz. And, in some embodiments, the method may include an operation for generating a bias voltage in the substrate support structure 103. In some embodiments, the bias voltage is generated in the range of about 100V to about 600V. However, it should be understood that in various embodiments, the bias voltage may be less than 100V or greater than 600V. And, in some embodiments, the bias voltage may be generated by a high-frequency signal having a frequency of about 13.56MHz. However, it should be understood that in various embodiments, the bias voltage may be generated by a high-frequency signal having a frequency different from 13.56 MHz. Also, in various embodiments, the bias voltage may be generated by a DC source.

[0150] Furthermore, in some embodiments, the method may include an operation to maintain the temperature of the substrate support structure 103 within a range of approximately 40°C to approximately 100°C. However, it should be understood that in various embodiments, the temperature of the substrate support structure 103 may be maintained at a value less than 40°C or greater than 100°C. Furthermore, in some embodiments, the method may include an operation to maintain the pressure within the plasma processing area 109 within a range of approximately 5 mmTorr to approximately 50 mmTorr. However, it should be understood that in various embodiments, the pressure within the plasma processing area 109 may be maintained at a value less than 5 mmTorr or greater than 50 mmTorr.

[0151] In some embodiments, the step of generating plasma in operation 1103 includes supplying a process gas to a plasma processing area 109, where the process gas is one or more of chlorine (Cl2), boron trichloride (BCl3), argon (Ar), carbon tetrafluoride (CF4), oxygen (O2), trifluoromethane (CHF3), and sulfur hexafluoride (SF6). In some embodiments, the step of generating plasma in operation 1103 includes supplying chlorine (Cl2) to the plasma processing area 109 at a flow rate in the range of about 20 sccm to about 300 sccm. In some embodiments, the step of generating plasma in operation 1103 includes supplying boron trichloride (BCl3) to the plasma processing area 109 at a flow rate in the range of about 50 sccm to about 300 sccm. In some embodiments, the step of generating plasma in operation 1103 includes supplying argon (Ar) to the plasma processing area 109 at a flow rate in the range of about 50 sccm to about 300 sccm. In some embodiments, the step of generating plasma in operation 1103 includes supplying carbon tetrafluoride (CF4) to the plasma processing area 109 at a flow rate in the range of about 50 sccm to about 200 sccm. In some embodiments, the step of generating plasma in operation 1103 includes supplying oxygen (O2) to the plasma processing area 109 at a flow rate in the range of about 20 sccm to about 300 sccm. In some embodiments, the step of generating plasma in operation 1103 includes supplying trifluoromethane (CHF3) to the plasma processing area 109 at a flow rate in the range of about 50 sccm to about 300 sccm. In some embodiments, the step of generating plasma in operation 1103 includes supplying sulfur hexafluoride (SF6) to the plasma processing area 109 at a flow rate in the range of about 50 sccm to about 300 sccm.

[0152] Figure 12 is a flowchart illustrating a method for manufacturing a focus ring structure for use in a plasma processing chamber, according to several embodiments. The method comprises an operation 1201 for forming a ring structure of a ceramic material, such as a ring portion 135-1A of a focus ring structure 135-1, where the ring structure is configured to surround a substrate support structure (e.g., substrate support structure 103) within a plasma processing chamber (e.g., chamber 102). The ring structure has an inner surface (e.g., inner surface 135-1A1) oriented to be exposed to a plasma processing area where plasma processing byproducts are generated when the ring structure is placed inside the plasma processing chamber during operation of the plasma processing chamber. In some embodiments, the ring structure is formed of aluminum oxide, silicon carbide, or another ceramic material that is chemically, mechanically, thermally, and electrically compatible with the operation of the plasma processing chamber. In some embodiments, the step of forming the ring structure in operation 1201 includes the step of forming three structures (e.g., radial extension structures 135B1, 135B2, 135B3) that extend radially outward from the outer surface of the ring structure, wherein the three structures are configured to engage with three respective lift components to allow the ring structure to be raised and lowered relative to the substrate support structure when the ring structure is placed in the plasma processing chamber. In some embodiments, the upper surfaces of the three structures extending radially outward from the outer surface of the ring structure are roughened to have an average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches.

[0153] The method further comprises operation 1203 for forming controlled surface topographic variations on the inner surface of the ring structure. The controlled surface topographic variations facilitate the adhesion of plasma treatment byproducts to the inner surface of the ring structure. In some embodiments, operation 1203 includes the step of performing media blasting through a mask placed on the inner surface of the ring structure. The mask is configured to expose portions of the inner surface of the ring structure to be removed / eroded in order to form controlled surface topographic variations on the inner surface of the ring structure. In some embodiments, the media blasting affects the inner surface of the ring structure with media including, in particular, one or more of the following: aluminum oxide, silicon carbide, crushed glass grit, glass beads, ceramics, glass, walnut shells, pumice, steel grit, steel shot, aluminum shot, zinc shot, copper shot, cut wire, garnet, silica sand, and staurolite. In some embodiments, operation 1203 includes the step of performing knurling on the inner surface of the ring structure before firing the ceramic material forming the ring structure. In some embodiments, the method may include a step of roughening the inner surface of the ring structure to have an average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches. In some embodiments, the roughening of the inner surface of the ring structure is performed by media blasting, which may or may not be the same media blasting used in operation 1203 to form controlled surface topographic variations on the inner surface of the ring structure. In some embodiments, the ceramic bare material forming the ring structure is left exposed on the inner surface of the ring structure.

[0154] As described above, the wall 105 of the chamber 102 has an opening 106A for loading and unloading the substrate 101 into and out of the chamber 102. In some embodiments, the opening 106A is covered by an access control device (such as a slit valve or gate valve or similar device) that provides a passage for a robotic substrate handling device into the chamber 102 through the opening 106A and also provides sealing of the opening 106A during the operation of the chamber 102. Figure 13A shows the system 100 of Figure 1A with an access control device 1301 positioned to cover the opening 106A, according to some embodiments. Figure 13B shows the chamber 102 coupled with a substrate handling module 1303 by the access control device 1301, according to some embodiments. The substrate handling module 1303 may include a robotic substrate handling device 1305 configured to load and unload the substrate 101 into and out of the chamber 102.

[0155] During plasma processing of the substrate 101 in chamber 102, plasma processing byproducts move freely within chamber 102 according to the processing gas flow pattern and / or existing pressure gradient. During plasma processing operations that produce non-volatile and / or low-volatile byproducts (in particular, such as PZT etching or Pt etching), plasma processing byproducts may enter the opening 106A and reach the access control device 1301. These plasma processing byproducts may deposit on the chamber wall 105 within the opening 106A and on the inner surface of the access control device 1301. Subsequently, during the operation of the access control device 1301, some of the deposited plasma processing byproducts may move into the access control device 1301 and possibly into the substrate handling module 1303. It should be understood that the movement of plasma processing byproducts into and / or through the access control device 1301 is undesirable because it diffuses contaminants. Furthermore, cleaning / removing plasma processing by-products that have accumulated in the opening 106A and moved into the access control device 1301 is difficult, time-consuming, and costly, as it often requires disassembling the chamber 102 and / or the access control device 1301 in order to perform the cleaning / removal of plasma processing by-products. In addition, the proximity of the opening 106A of the chamber 102 to the substrate handling module 1303 increases the likelihood of cross-contamination if any accumulated by-product material peels off in flakes onto the robotic substrate handling device 1305 and is transported to another part of the manufacturing equipment.

[0156] Figure 14 shows a substrate access port shield 1401 for use within a chamber 102 according to several embodiments. The substrate access port shield 1401 comprises a shield portion 1403 configured to be positioned over a portion of the opening 106A in the chamber 102. The substrate access port shield 1401 further comprises a first support portion 1405 extending from a first end of the shield portion 1403. The substrate access port shield 1401 further comprises a second support portion 1407 extending from a second end of the shield portion 1403. The shield portion 1403, the first support portion 1405, and the second support portion 1407 form an integral shield structure extending along an arc. In some embodiments, the arc of the substrate access port shield 1401 is conformal to the arc of the liner structure 139.

[0157] The first support portion 1405 is configured to engage with a vertically movable component in the chamber 102, and the second support portion 1407 is configured to engage with a vertically movable component in the chamber 102, so that the vertical movement of the vertically movable component causes a corresponding vertical movement of the substrate access port shield 1401. In some embodiments, such as shown in Figure 14, the vertically movable component in the chamber 102 is a focus ring structure 135 / 135-1. In some embodiments, the substrate access port shield 1401 includes a plurality of notched regions 1409A, 1409B, 1409C corresponding to radial extensions 135B1, 135B2, 135B3 of the focus ring structure 135 / 135-1. Figure 15 is an isometric view of the substrate access port shield 1401 showing the notched regions 1409A, 1409B, 1409C according to some embodiments. The notched regions 1409A, 1409B, and 1409C are formed to allow the substrate access port shield 1401 to be positioned perpendicularly on the radial extensions 135B1, 135B2, and 135B3 of the focus ring structure 135 / 135-1, with the radial extensions 135B1, 135B2, and 135B3 being inserted into the notched regions 1409A, 1409B, and 1409C, respectively. In some embodiments, the notched regions 1409A, 1409B, and 1409C are further formed to allow the substrate access port shield 1401 to be held firmly on the focus ring structure 135 / 135-1 by gravity alone (i.e., without any other fastening devices). However, in another embodiment, the substrate access port shield 1401 may be fixed to the focus ring structure 135 / 135-1 using one or more fastening devices. In some embodiments, the substrate access port shield 1401 may also include one or more additional notched regions to accommodate observation of the plasma processing region 109 for purposes such as optical endpoint spectroscopy (OES) or other purposes when the focus ring structure 135 / 135-1 is in the plasma processing position.

[0158] In embodiments where the substrate access port shield 1401 is positioned on the focus ring structure 135 / 135-1, the vertical movement of the focus ring structure 135 / 135-1 by the lift components 137A, 137B, and 137C causes the corresponding vertical movement of the substrate access port shield 1401. It should also be understood that in some embodiments, the substrate access port shield 1401 can be utilized within the chamber 102 when the focus ring structure 135 / 135-1 is not present in the chamber 102. In these embodiments, the substrate access port shield 1401 is configured to interact with one or more vertically movable components in the chamber 102 other than the focus ring structure 135 / 135-1. For example, in some embodiments, the substrate access port shield 1401 is configured to connect directly to the lift components 137A, 137B, and 137C when the focus ring structure 135 / 135-1 is not present in the chamber 102. Thus, the vertical movement of the lift components 137A, 137B, and 137C causes the corresponding vertical movement of the substrate access port shield 1401.

[0159] The shield portion 1403 is configured such that the first support portion 1405 and the second support portion 1407 engage with the vertically movable component (e.g., focus ring structure 135 / 135-1), and when the vertically movable component is in the lower vertical position, it at least partially covers the opening 106A of the chamber 102. The shield portion 1403 is also configured such that the first support portion 1405 and the second support portion 1407 engage with the vertically movable component (e.g., focus ring structure 135 / 135-1), and when the vertically movable component is in the upper vertical position, it does not cover the opening 106A of the chamber 102. In some embodiments, depending on the configuration of the focus ring structure 135 / 135-1 and the vertical travel distance of the focus ring structure 135 / 135-1, it may be necessary to shorten the shield portion 1403 of the substrate access port shield 1401 vertically in order to allow sufficient exposure of the opening 106A of the chamber 102 when the focus ring structure 135 / 135-1 is in the fully upper vertical position. For example, Figure 16 shows a modified substrate access port shield 1401A having a shorter vertical distance 1411 for the shield portion 1403A to allow sufficient exposure of the opening 106A of the chamber 102 when the focus ring structure 135 / 135-1 is in the fully upper vertical position, according to some embodiments.

[0160] Figure 17A is a side view showing an example 1401A of a substrate access port shield arranged on the focus ring structure 135 / 135-1, according to several embodiments, with the focus ring structure 135 / 135-1 in its fully lowered position. In the example in Figure 17A, the vertical distance 1411 of the shield portion 1403A of the substrate access port shield 1401A covers approximately 75% of the vertical range of the opening 106A when the focus ring structure 135 / 135-1 is in its fully lowered position. In various embodiments, the substrate access port shield 1401A is positioned on the focus ring structure 135 / 135-1, and with the focus ring structure 135 / 135-1 in its fully lowered position, the substrate access port shield 1401A is configured to cover at least approximately 50% of the vertical range of the opening 106A. In some embodiments, the substrate access port shield 1401A is positioned on the focus ring structure 135 / 135-1, and with the focus ring structure 135 / 135-1 in its fully lowered position, the substrate access port shield 1401A is configured to cover at least two-thirds of the vertical range of the opening 106A. In some embodiments, the substrate access port shield 1401A is positioned on the focus ring structure 135 / 135-1, and with the focus ring structure 135 / 135-1 in its fully lowered position, the substrate access port shield 1401A is configured to cover the entire vertical range of the opening 106A.

[0161] Figure 17B is a side view showing an example 1401A of a substrate access port shield arranged on the focus ring structure 135 / 135-1, with the focus ring structure 135 / 135-1 in its fully upper position, according to several embodiments. In the example in Figure 17B, the vertical distance 1411 of the shield portion 1403A of the substrate access port shield 1401A is defined such that the shield portion 1403A is positioned vertically above the opening 106A. In some embodiments, the vertical distance 1411 of the shield portion 1403A of the substrate access port shield 1401A may be defined such that the shield portion 1403A still covers a portion of the vertical range of the opening 106A, as long as the unobstructed vertical range of the opening 106A is large enough to allow the movement of the substrate 101 and the robotic substrate handling device 1305 through the opening 106A without interference.

[0162] In various embodiments, the substrate access port shield 1401 / 1401A is configured as part of a hollow straight cylinder. In some embodiments, the radial thickness of the substrate access port shield 1401 / 1401A is substantially uniform. In various embodiments, the radial thickness of the substrate access port shield 1401 / 1401A is in the range of about 0.125 inches (about 3.175 mm) to about 0.5 inches (about 12.7 mm), or in the range of about 0.375 inches (about 9.525 mm) to about 0.5 inches (about 12.7 mm), or about 0.217 inches (about 5.5118 mm), or about 0.375 inches. In some embodiments, the radial thickness of the substrate access port shield 1401 / 1401A is non-uniform. For example, in some embodiments, the first support portion 1405 and the second support portion 1407 may have different radial thicknesses than the shield portion 1403 / 1403A. Furthermore, since some plasma processing operations are performed at low pressure, diffusion of plasma processing by-products within the chamber 102 can be significant. Therefore, in some embodiments, there is interest in positioning the substrate access port shield 1401 / 1401A as close as possible to the liner structure 139 radially without contact with the liner structure 139, in order to reduce the area of ​​channels through which by-products can diffuse between the substrate access port shield 1401 / 1401A and the liner structure 139. In some embodiments, the radial distance 1701 between the substrate access port shield 1401 / 1401A and the liner structure 139 is, for example, about 0.1 inches (about 2.54 millimeters).

[0163] In some embodiments, such as those shown in Figures 15 and 16, the shield portion 1403 / 1403A of the substrate access port shield 1401 / 1401A is a first portion of a hollow straight cylinder, the first support portion 1405 is a second portion of the hollow straight cylinder, and the second support portion 1407 is a third portion of the hollow straight cylinder. Also in some embodiments, the shield portion 1403 / 1403A has a first vertical height (i.e., vertical distance 1411) measured in the axial direction of the hollow straight cylinder, the first support portion 1405 has a second vertical height measured in the axial direction of the hollow straight cylinder, and the second support portion 1407 has a third vertical height measured in the axial direction of the hollow straight cylinder. In some embodiments, the first vertical height of the shield portion 1403 / 1403A, the second vertical height of the first support portion 1405, and the third vertical height of the second support portion 1407 are substantially equal. In some embodiments, the first vertical height of the shield portion 1403 / 1403A is different from the second vertical height of the first support portion 1405 and the third vertical height of the second support portion 1407, respectively. In some embodiments, the second vertical height of the first support portion 1405 and the third vertical height of the second support portion 1407 are substantially equal. In some embodiments, the first vertical height of the shield portion 1403 / 1403A is smaller than the second vertical height of the first support portion 1405 and the third vertical height of the second support portion 1407, respectively.

[0164] In some embodiments, the substrate access port shield 1401 / 1401A is formed as a monolithic ceramic component. In various embodiments, the substrate access port shield 1401 / 1401A may be formed of aluminum oxide, silicon carbide, or essentially any other ceramic material that is chemically, mechanically, thermally, and electrically suitable for use in chamber 102. Also, in some embodiments, the material forming the substrate access port shield 1401 / 1401A is such that the material forming the substrate access port shield 1401 / 1401A is suitable for use in chamber 102 inside Non-ceramic materials may be used, insofar as they are chemically, mechanically, thermally, and electrically compatible with the plasma processing operation to be performed.

[0165] In some embodiments, the surface of the substrate access port shield 1401 / 1401A may be roughened / textured to have a predetermined mean surface roughness (Ra) to facilitate the adhesion and retention of plasma processing byproducts onto the substrate access port shield 1401 / 1401A. In some embodiments, at least the radially inner surface of the substrate access port shield 1401 / 1401A has a mean surface roughness (Ra) in the range of about 150 microinches to about 500 microinches, where the radially inner surface faces the plasma processing area 109. In some embodiments, the entire outer surface of the substrate access port shield 1401 / 1401A has a mean surface roughness (Ra) in the range of about 150 microinches to about 500 microinches.

[0166] In some embodiments, the surface of the substrate access port shield 1401 / 1401A is roughened by media blasting. In various embodiments, media blasting may be specified and performed to increase surface roughness, create a high contact angle on the surface, and increase the overall surface area of ​​the substrate access port shield 1401 / 1401A. In various embodiments, media blasting may be specified and performed to affect the surface of the substrate access port shield 1401 / 1401A with media including, in particular, one or more of the following media types: aluminum oxide, silicon carbide, crushed glass grit, glass beads, ceramics, glass, walnut shells, pumice, steel grit, steel shot, aluminum shot, zinc shot, copper shot, cut wire, garnet, silica sand, and staurolite. It should be understood that in some embodiments, media blasting can impart a predetermined roughness / texture to the surface of the substrate access port shield 1401 / 1401A substantially uniformly. Furthermore, in some embodiments, media blasting may be performed in conjunction with a patterned mask designed to generate a predetermined surface topography on the surface of the substrate access port shield 1401 / 1401A. For example, the patterned mask may include a distribution of opening regions through which the media blast material can reach the surface of the substrate access port shield 1401 / 1401A. The media blast material removes some of the ceramic material within the opening regions of the patterned mask, but not the ceramic material protected by the patterned mask, thereby creating a predetermined surface topography on the surface of the substrate access port shield 1401 / 1401A. In addition to, or instead of, media blasting, roughness / texture may be imparted to the surface of the substrate access port shield 1401 / 1401A by performing a knurling process on the ceramic of the substrate access port shield 1401 / 1401A before firing the ceramic.

[0167] In some embodiments, the ceramic material forming the substrate access port shield 1401 / 1401A is exposed on the radially inner surface of the substrate access port shield 1401 / 1401A. More specifically, in some embodiments, the substrate access port shield 1401 / 1401A formed of ceramic material is left uncoated for use in the chamber 102. In some embodiments where the substrate access port shield 1401 / 1401A is formed of a non-ceramic material (e.g., aluminum), the substrate access port shield 1401 / 1401A may be coated with a suitable coating material (in particular, such as an yttria coating or an anodized coating).

[0168] The substrate access port shield 1401 / 1401A is a passive component that provides at least partial closure / covering of the opening 106A of the chamber 102 to which the access control device 1301 is connected. Although the substrate access port shield 1401 / 1401A is a passive component, it behaves as if it were an active component by working in conjunction with active components. For example, since the substrate access port shield 1401 / 1401A is on the focus ring structure 135 / 135-1, the substrate access port shield 1401 / 1401A can be moved vertically by the controlled vertical movement of the focus ring structure 135 / 135-1. The use of the substrate access port shield 1401 / 1401A within the chamber 102 does not require deformation of any other component within the chamber 102 and does not require the installation of any further operating / moving components within the chamber 102.

[0169] The substrate access port shield 1401 / 1401A may be configured to prevent the majority of non-volatile and / or low-volatile plasma processing byproducts from entering the opening 106A and from accumulating in or near the access control device 1301. The substrate access port shield 1401 / 1401A also provides additional surface area around the inner circumference of the chamber 102 to help trap and retain non-volatile and / or low-volatile plasma processing byproducts, particularly during plasma processing operations that generate significant amounts of such byproducts (such as PZT etching and Pt etching). The substrate access port shield 1401 / 1401A provides a target surface on which etching byproducts can accumulate without entering the opening 106A and possibly the access control device 1301, which is difficult to clean and likely to be contaminated by particles. By reducing and / or preventing etching byproduct deposition within the opening 106A, the substrate access port shield 1401 / 1401A functions to reduce the mean time to cycle (MTTC) of the chamber 102.

[0170] In some embodiments, the substrate access port shield 1401 / 1401A is a consumable that can be discarded and replaced during regularly scheduled openings of the chamber 102. By trapping non-volatile and / or low-volatile plasma processing byproducts, the substrate access port shield 1401 / 1401A functions to reduce particle generation within the chamber 102 and the opening 106A during the insertion and removal of the substrate 101 into and from the chamber 102. Also, by reducing and / or preventing non-volatile and / or low-volatile plasma processing byproducts from entering the access control device 1301, the substrate access port shield 1401 / 1401A functions to prevent premature damage to the access control device 1301 that may be caused when byproducts are trapped in the access control device 1301 or one or more seal (i.e., O-ring) areas of the access control device 1301. Thus, the substrate access port shield 1401 / 1401A functions to extend the life of the access control device 1301. Furthermore, the substrate access port shield 1401 / 1401A helps prevent leaks in the area of ​​the access control device 1301 that may be caused by the deposition and / or capture of non-volatile and / or low-volatile plasma processing byproducts, thereby providing better vacuum integrity to the chamber 102. In addition, by helping to prevent byproducts from entering the access control device 1301, the substrate access port shield 1401 / 1401A functions to reduce malfunctions of the access control device 1301 during opening and closing operations, and functions to reduce the frequency, duration, and difficulty of physical cleaning of the access control device 1301. In some examples, the use of the substrate access port shield 1401 / 1401A can reduce the cleaning time of the access control device 1301 by more than 50%. The substrate access port shield 1401 / 1401A functions to reduce problems with the access control device 1301 caused by the intrusion of plasma processing byproducts into the access control device 1301, and therefore the substrate access port shield 1401 / 1401A functions to reduce downtime of the chamber 102 caused by problems with the access control device 1301.

[0171] Figure 18 is a flowchart illustrating a method for plasma treatment of a substrate according to several embodiments. The method comprises an operation 1801 for preparing a plasma treatment chamber (i.e., chamber 102) comprising a substrate support structure 103, a focus ring structure 135 / 135-1, and a substrate access port shield 1401 / 1401A. The focus ring structure 135 / 135-1 is configured to surround the substrate support structure 103. The focus ring structure 135 / 135-1 comprises a ring portion 135A formed as a hollow straight cylinder, and three radial extension structures 135B1, 135B2, and 135B3 configured to extend radially outward from the outer surface 135A2 of the ring portion 135A. The substrate access port shield 1401 / 1401A comprises a shield portion 1403, a first support portion 1405, and a second support portion 1407. The first support portion 1405 extends from the first end of the shield portion 1403. The first support portion 1405 is configured to engage with the first structure among the radial extension structures 135B1, 135B2, and 135B3 of the focus ring structure 135 / 135-1. The second support portion 1407 extends from the second end of the shield portion 1403. The second support portion 1407 is configured to engage with the second structure among the radial extension structures 135B1, 135B2, and 135B3 of the focus ring structure 135 / 135-1.

[0172] In some embodiments, the method comprises the step of connecting the substrate access port shield 1401 / 1401A to the focus ring structure 135 / 135-1 without fasteners. In some embodiments, the substrate access port shield 1401 / 1401A is secured to the focus ring structure 135 / 135-1 by gravity. In some embodiments, the step of connecting the access port shield 1401 / 1401A to the focus ring structure 135 / 135-1 without fasteners includes the step of inserting the first radial extension structure 135B1 of the focus ring structure 135 / 135-1 into a notch 1409A formed in the first support portion 1405 of the substrate access port shield 1401 / 1401A. Furthermore, the step of connecting the access port shield 1401 / 1401A to the focus ring structure 135 / 135-1 without fasteners includes the step of inserting the second radial extension structure 135B2 of the focus ring structure 135 / 135-1 into the notch 1409B formed in the second support portion 1407 of the substrate access port shield 1401 / 1401A. Then, the step of connecting the access port shield 1401 / 1401A to the focus ring structure 135 / 135-1 without fasteners includes the step of inserting the third radial extension structure 135B3 of the focus ring structure 135 / 135-1 into the notch 1409C formed in the second support portion 1407 of the substrate access port shield 1401 / 1401A.

[0173] The method further includes an operation 1803 for positioning the focus ring structure 135 / 135-1 in a lower vertical position. In some embodiments, the step of positioning the focus ring structure 135 / 135-1 in a lower vertical position includes the step of operating three lift components 137A, 137B, and 137C that engage with three radial extension structures 135B1, 135B2, and 135B3 of the focus ring structure 135 / 135-1, respectively. The method further includes an operation 1805 for generating plasma in a plasma processing region 109 above the substrate support structure 103. In some embodiments, the plasma is generated in operation 1805 such that components of the plasma interact with the material on the substrate 101 to produce plasma processing byproducts, where some of the plasma processing byproducts are blocked by the access port shield 1401 / 1401A so as not to enter the opening 106A. In some embodiments, the material on the substrate 101 is a lead zirconate titanate (PZT) film. In some embodiments, the material on the substrate 101 is a platinum (Pt) film. In some embodiments, the material on the substrate 101 is a film that causes a large amount of byproduct deposition in the chamber 102 when exposed to the plasma generated in operation 1805. The method may further include the steps of stopping the generation of plasma in the plasma processing area 109 above the substrate support structure 103, and positioning the focus ring structure 135 / 135-1 in an upper vertical position to vertically raise the substrate access port shield 1401 / 1401A to allow unobstructed passage of the substrate 101 and the robotic substrate handling device 1305 through the opening 106A.

[0174] In some embodiments, the step of generating plasma in operation 1805 may include the step of applying high-frequency power to the processing gas in the plasma processing area 109. In some embodiments, the applied high-frequency power may be in the range of about 400 W to about 1250 W. However, it should be understood that in various embodiments, the applied high-frequency power may be less than 400 W or greater than 1250 W. In some embodiments, the high-frequency power is applied by a high-frequency signal having a frequency of about 13.56 MHz. However, it should be understood that in various embodiments, the high-frequency power may be applied by a high-frequency signal having a frequency different from 13.56 MHz. And, in some embodiments, the method may include an operation for generating a bias voltage in the substrate support structure 103. In some embodiments, the bias voltage is generated in the range of about 100 V to about 600 V. However, it should be understood that in various embodiments, the bias voltage may be less than 100 V or greater than 600 V. And, in some embodiments, the bias voltage may be generated by a high-frequency signal having a frequency of about 13.56 MHz. However, it should be understood that in various embodiments, the bias voltage may be generated by a high-frequency signal having a frequency different from 13.56 MHz. Also, in various embodiments, the bias voltage may be generated by a DC source.

[0175] Furthermore, in some embodiments, the method may include an operation to maintain the temperature of the substrate support structure 103 within a range of approximately 40°C to approximately 100°C. However, it should be understood that in various embodiments, the temperature of the substrate support structure 103 may be maintained at a value less than 40°C or greater than 100°C. Furthermore, in some embodiments, the method may include an operation to maintain the pressure within the plasma processing area 109 within a range of approximately 5 mmTorr to approximately 50 mmTorr. However, it should be understood that in various embodiments, the pressure within the plasma processing area 109 may be maintained at a value less than 5 mmTorr or greater than 50 mmTorr.

[0176] In some embodiments, the step of generating plasma in operation 1805 includes supplying a process gas to the plasma processing area 109, where the process gas is one or more of chlorine (Cl2), boron trichloride (BCl3), argon (Ar), carbon tetrafluoride (CF4), oxygen (O2), trifluoromethane (CHF3), and sulfur hexafluoride (SF6). In some embodiments, the step of generating plasma in operation 1805 includes supplying chlorine (Cl2) to the plasma processing area 109 at a flow rate in the range of about 20 sccm to about 300 sccm. In some embodiments, the step of generating plasma in operation 1805 includes supplying boron trichloride (BCl3) to the plasma processing area 109 at a flow rate in the range of about 50 sccm to about 300 sccm. In some embodiments, the step of generating plasma in operation 1805 includes supplying argon (Ar) to the plasma processing area 109 at a flow rate in the range of about 50 sccm to about 300 sccm. In some embodiments, the step of generating plasma in operation 1805 includes supplying carbon tetrafluoride (CF4) to the plasma processing area 109 at a flow rate in the range of about 50 sccm to about 200 sccm. In some embodiments, the step of generating plasma in operation 1805 includes supplying oxygen (O2) to the plasma processing area 109 at a flow rate in the range of about 20 sccm to about 300 sccm. In some embodiments, the step of generating plasma in operation 1805 includes supplying trifluoromethane (CHF3) to the plasma processing area 109 at a flow rate in the range of about 50 sccm to about 300 sccm. In some embodiments, the step of generating plasma in operation 1805 includes supplying sulfur hexafluoride (SF6) to the plasma processing area 109 at a flow rate in the range of about 50 sccm to about 300 sccm.

[0177] Figure 19 is a flowchart showing a method for manufacturing a substrate access port shield 1401 / 1401A for use in a plasma processing chamber, according to several embodiments. The method comprises an operation 1901 for forming a substrate access port shield 1401 / 1401A comprising a shield portion 1403, a first support portion 1405 extending from a first end of the shield portion 1403, and a second support portion 1407 extending from a second end of the shield portion 1403. The first support portion 1405 is configured to engage with a vertically movable component (e.g., a focus ring structure 135 / 135-1) within the plasma processing chamber (e.g., within chamber 102). The second support portion 1407 is configured to engage with a vertically movable component within chamber 102. The substrate access port shield 1401 / 1401A is formed to extend along an arc and to at least partially cover the opening 106A in the wall 105 of the chamber 102, which functions as a substrate access port, when the first support portion 1405 and the second support portion 1407 are engaged with the vertically movable component and the vertically movable component is in the lower vertical position. The substrate access port shield 1401 / 1401A is configured not to cover the opening 106A when the first support portion 1405 and the second support portion 1407 are engaged with the vertically movable component and the vertically movable component is in the upper vertical position.

[0178] In some embodiments, the process of forming the substrate access port shield 1401 / 1401A includes forming a notch 1409A within the first support portion 1405 for receiving a first portion of the vertically movable component (e.g., for receiving a radial extension structure 135B1). The process of forming the substrate access port shield 1401 / 1401A may also include forming a notch 1409B within the second support portion 1407 for receiving a second portion of the vertically movable component (e.g., for receiving a radial extension structure 135B2). The process of forming the substrate access port shield 1401 / 1401A may also include forming a notch 1409C within the second support portion 1407 for receiving a third portion of the vertically movable component (e.g., for receiving a radial extension structure 135B3).

[0179] In some embodiments, operation 1901 includes the step of forming the substrate access port shield 1401 / 1401A with aluminum oxide, silicon carbide, or another ceramic material that is chemically, mechanically, thermally, and electrically compatible with the operation of the plasma processing chamber. In some embodiments, operation 1901 includes the step of roughening the outer surface of the substrate access port shield 1401 / 1401A to have an average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches. In some embodiments, the step of roughening the outer surface of the substrate access port shield 1401 / 1401A is done by a media blast treatment affecting the outer surface of the substrate access port shield 1401 / 1401A with a media that includes, in particular, one or more of the following: aluminum oxide, silicon carbide, crushed glass grit, glass beads, ceramics, glass, walnut shells, pumice, steel grit, steel shot, aluminum shot, zinc shot, copper shot, cut wire, garnet, silica sand, and staurolite. In some embodiments, operation 1901 includes the step of performing a knurling treatment on the outer surface of the substrate access port shield 1401 / 1401A before firing the ceramic material that forms the substrate access port shield 1401 / 1401A. In some embodiments, the ceramic bare material forming the substrate access port shield 1401 / 1401A remains exposed on the outer surface of the substrate access port shield 1401 / 1401A.

[0180] As discussed with respect to Figures 1A and 1B, the wall 105 of the chamber 102 may have openings for various purposes. For example, Figure 20 shows a chamber 102 with an opening 106A for loading and unloading a substrate 101 into the chamber 102, according to some embodiments. Also, Figure 20 shows a chamber 102 with an opening 106B that provides a viewport for observing the plasma processing area 109 within the chamber 102, either manually or by various devices, according to some embodiments. It should be understood that openings 106A and 106B are provided as examples. In various embodiments, the chamber 102 may have only opening 106A, or it may have more openings than openings 106A and 106B. Each opening (e.g., 106A, 106B) penetrating the wall 105 of the chamber 102 forms a three-dimensional cavity or passage having a geometric shape (depth and cross-sectional shape) defined by the shape of the wall 105 at the location of the opening.

[0181] During plasma processing of the substrate 101 in chamber 102, plasma processing byproducts move freely within chamber 102 according to the processing gas flow pattern and / or existing pressure gradient. During plasma processing operations that produce non-volatile and / or low-volatile byproducts (in particular, such as PZT etching or Pt etching), plasma processing byproducts may enter openings formed through the wall 105 of chamber 102 (such as openings 106A and 106B) and deposit on the surface of wall 105 within the openings. In low-vacuum pressure plasma processing where non-volatile and / or low-volatile plasma processing byproducts are formed (such as PZT etching and Pt etching), large amounts of byproduct deposits may accumulate within openings formed through the wall 105 of chamber 102 (e.g., 106A, 106B). At least in part, due to the tight configuration of the openings, cleaning / removing plasma processing byproducts deposited within the openings can be difficult, time-consuming, and costly. Furthermore, it is often necessary to clean / remove plasma processing byproducts deposited in the openings using physical / mechanical techniques, which increases the difficulty, time, and cost of the cleaning process. The time required to clean plasma processing byproducts from within the openings in wall 105 is added to the overall chamber cleaning time, thereby increasing the mean time to clean (MTTC) of chamber 102 and reducing the availability of chamber 102 for semiconductor manufacturing operations.

[0182] Various embodiments of insert liners that can be inserted into openings (e.g., openings 106A, 106B) formed through the wall 105 of the chamber 102 are disclosed herein to provide protection for the surface of the wall 105 within the opening and to provide a sacrificial surface on which plasma processing byproducts can be deposited without depositing on the surface of the wall 105 within the opening. For example, Figure 21 shows an insert liner 2101 configured to be inserted into opening 106A and an insert liner 2103 configured to be inserted into opening 106B according to some embodiments. Figure 22 is an isometric view showing the insert liner 2101 according to one embodiment of the present invention. Figure 23 is an isometric view showing the insert liner 2103 according to one embodiment of the present invention.

[0183] In some embodiments, the insert liners 2101, 2103 may be manufactured from sheet metal, such as hard anodized aluminum sheet metal (e.g., 5056 sheet metal aluminum). The sheet metal may be cut and bent into a configuration conforming to the openings 106A, 106B through the wall 105 of the chamber 102 in which the insert liners are located. In some embodiments, the insert liners 2101, 2103 are formed from sheet metal having a thickness in the range of about 0.030 inches (about 0.762 mm) to about 0.090 inches (about 2.286 mm). In some embodiments, the insert liners 2101, 2103 may be formed from plate metal (such as hard anodized aluminum plate), which may be cut and welded into a configuration conforming to the openings 106A, 106B through the wall 105 of the chamber 102 in which the insert liners are located. The insert liners 2101 and 2103 are formed to substantially cover the surface of the wall 105 within the openings 106A and 106B.

[0184] In some embodiments, as shown in Figures 22 and 23, the insert liners 2101 and 2103 may be formed to have a continuous structure (i.e., a closed shape) that surrounds the vertical cross-section of the openings 106A and 106B when inserted into the openings 106A and 106B. However, in some embodiments, the insert liners 2101 and 2103 may be formed to have a discontinuous structure. For example, Figure 24 shows an insert liner 2101A, which is a variation of the insert liner 2101 according to some embodiments, where the insert liner 2101A is cut open on a vertical side to form a gap 2401. The gap 2401 separates the first end of the insert liner 2101A from the second end of the insert liner 2101A such that the gap 2401 forms a discontinuity in the outer profile of the insert liner 2101A. The gap 2401 provides the insert liner 2101A with mechanical flexibility against compression of the outer surface profile of the insert liner 2101A, in order to allow the insert liner 2101A to be inserted into the opening 106A.

[0185] In some embodiments, the insert liner 2101A has spring properties that allow it to push outward against the surface of the wall 105 when it is inserted into the opening 106A. For example, if the insert liner 2101A is manufactured from sheet metal, the sheet metal can be bent so that it applies a spring force to the surface of the wall 105 when it is inserted into the opening 106A. In these embodiments, the gap 2401 allows for compression of the insert liner 2101A to facilitate insertion of the insert liner 2101A into the opening 106A and removal of the insert liner 2101A from the opening 106A. In some embodiments, the insert liner 2101A having the gap 2401 can be compressed by hand. Furthermore, in some embodiments, one or more surfaces of the insert liner 2101A may have a convex shape that enhances the spring force applied to the surface of the wall 105 when the insert liner 2101A is inserted into the opening 106A. For example, Figure 25 is a front view showing insert liner 2101B, which is a variation of insert liner 2101A, having a convex region 2501 formed on the upper surface of insert liner 2101B according to some embodiments. Insert liner example 2101B also has a gap 2401. It should be understood that in some embodiments, insert liner 2103 may be configured to have a gap such as gap 2401 and / or a convex region such as convex region 2501. In some embodiments, insert liners 2101, 2101A, 2101B, and 2103 are configured to have sufficient mechanical flexibility to compress the outer surface profile of the insert liner in order to allow the insert liner to be inserted into the openings 106A and 106B.

[0186] The insert liners (e.g., 2101, 2101A, 2101B, 2103) are configured such that the necessary clearance is maintained through the openings 106A, 106B when they are installed within the openings 106A, 106B. It should be understood that the insert liners (e.g., 2101, 2101A, 2101B, 2103) can be installed within the openings 106A, 106B without the use of hardware fasteners, adhesives, or other locking / retaining devices, because the insert liners are immovable parts and the spring force applied by the insert liners against the walls 105 of the chamber 102 is sufficient to hold the insert liners within the openings 106A, 106B during the operation of the chamber 102.

[0187] Furthermore, in some plasma processing operations, an existing opening (e.g., 106B) formed through the wall 105 of the chamber 102 may not be necessary. In this situation, the insert liner may be configured to completely seal the opening when the insert liner is inserted into the opening. For example, Figure 26 shows an insert liner 2601 configured to be inserted into the opening 106B according to some embodiments, and having a vertical surface 2603 that seals the opening 106B on the inner surface of the wall 105 of the chamber 102. In some embodiments, the insert liner 2601 is formed of sheet metal, as described above with respect to the insert liners 2101 and 2103. Also, in some embodiments, the insert liner 2601 may be formed to have a gap 2605 (similar to a gap 2401) cut through a vertical side to allow compression of the insert liner 2601 to facilitate insertion of the insert liner 2601 into the opening 106B and removal of the insert liner 2601 from the opening 106B. In some embodiments, the insert liner 2601 may also be formed to include one or more convex regions (similar to the convex region 2501) to provide / enhance the spring force applied by the insert liner 2601 against the wall 105 within the opening 106B.

[0188] Furthermore, Figure 27 shows an insert liner 2701 having a vertical surface 2703 that substantially covers the surface of the window 108 exposed through the opening 106B, according to several embodiments. The insert liner 2701 can be used when the opening 106B is not required. In some embodiments, the insert liner 2701 is formed of sheet metal, as described above with respect to the insert liners 2101 and 2103. Also in some embodiments, the insert liner 2701 may be formed to have a gap 2705 (similar to a gap 2401) cut through the vertical side to allow compression of the insert liner 2701 to facilitate insertion of the insert liner 2701 into the opening 106B and removal of the insert liner 2701 from the opening 106B. Also in some embodiments, the insert liner 2701 may be formed to have one or more convex regions (similar to a convex region 2501) to provide / reinforce the spring force applied by the insert liner 2701 against the wall 105 in the opening 106B.

[0189] Furthermore, Figure 28 shows an insert liner 2801, according to several embodiments, comprising a first vertical surface 2803 that substantially covers the surface of the window 108 exposed through the opening 106B, and a second vertical surface 2805 that closes the opening 106B on the inner surface of the wall 105 of the chamber 102. The insert liner 2801 can be used when the opening 106B is not needed. In some embodiments, the insert liner 2801 is formed of sheet metal, as described above with respect to the insert liners 2101, 2103. Also in some embodiments, the insert liner 2801 has a gap 2807 (gap) cut through its vertical side to allow compression of the insert liner 2801, in order to facilitate insertion of the insert liner 2801 into the opening 106B and removal of the insert liner 2801 from the opening 106B. 2401It may also be formed to include (similar to) the insert liner 2801. In some embodiments, the insert liner 2801 may also be formed to include one or more convex regions (similar to the convex region 2501) to provide / enhance the spring force applied by the insert liner 2801 against the wall 105 in the opening 106B.

[0190] In some embodiments, the insert for opening 106A may be configured as a solid plug. Figure 29 shows an insert plug 2901 configured, according to some embodiments, to fit just into opening 106B and provide continuity of the inner profile of the wall 105 of chamber 102. The insert plug 2901 is available when opening 106B is not required. In some embodiments, the insert plug 2901 is machined from a block of aluminum or other suitable material that is chemically, mechanically, thermally, and electrically suitable for use within chamber 102.

[0191] In some embodiments, insert liners 2101, 2101A, 2101B, 2103, 2601, 2701, 2801, and / or insert plug 2901 are Chamber They may be configured as disposable components that can be removed and discarded during cleaning of chamber 102. For example, if insert liners 2101, 2101A, 2101B, 2103, 2601, 2701, and 2801 are manufactured from low-cost materials such as hard anodized aluminum sheet metal, then insert liners 2101, 2101A, 2101B, 2103, 2601, 2701, and 2801 can be considered consumable components. However, in some embodiments, insert liners 2101, 2101A, 2101B, 2103, 2601, 2701, and 2801, and / or insert plugs 2901 may be cleaned and restored for reuse within chamber 102.

[0192] The insert liners 2101, 2101A, 2101B, 2103, 2601, 2701, 2801, and insert plug 2901 have a processing exposure surface that is fluidly exposed to the internal region of the chamber 102 when the insert liner is inserted into the openings 106A, 106B. The processing exposure surface may be tuned to promote the adhesion of plasma processing byproducts to the processing exposure surface. In some embodiments, the insert liners 2101, 2101A, 2101B, 2103, 2601, 2701, 2801, and / or the insert plug 2901 may be formed to have a predetermined mean surface roughness (Ra) that promotes the adhesion and retention of plasma processing byproducts. In some embodiments, the insert liners 2101, 2101A, 2101B, 2103, 2601, 2701, 2801, and / or the insert plug 2901 have an average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches. Also in some embodiments, the insert liners 2101, 2101A, 2101B, 2103, 2601, 2701, 2801, and / or the insert plug 2901 may be formed to have a surface coating (in particular, such as an yttria coating or an anodized coating).

[0193] It should be understood that the use of insert liners 2101, 2101A, 2101B, 2103, 2601, 2701, 2801, and / or insert plug 2901 in a plasma etching chamber is particularly effective due to the large amount of non-volatile and / or low-volatile byproducts generated during etching (especially during PZT etching and Pt etching). Insert liners 2101, 2101A, 2101B, 2103, 2601, 2701, 2801, and insert plug 2901 provide a low-cost and easy-to-maintain solution for managing plasma processing byproduct deposition in openings (e.g., 106A, 106B) formed through the wall 105 of the chamber 102. It should be understood that with the use of insert liners 2101, 2101A, 2101B, 2103, 2601, 2701, 2801, and / or insert plugs 2901, technicians no longer need to spend considerable time cleaning the hard-to-reach surfaces of wall 105 within openings 106A, 106B during chamber 102 cleaning. Rather, technicians only need to remove and replace insert liners 2101, 2101A, 2101B, 2103, 2601, 2701, 2801, and / or insert plugs 2901. Thus, insert liners 2101, 2101A, 2101B, 2103, 2601, 2701, 2801, and / or insert plugs 2901 reduce operating costs and improve the manufacturing throughput of substrates 101 by reducing the average time to cycle (MTTC) of chamber 102. In some embodiments, the time required to clean the surface of the wall 105 within the openings 106A, 106B is reduced by more than 50%. Additionally, the use of insert liners 2101, 2101A, 2101B, 2103, 2601, 2701, 2801, and / or insert plugs 2901 helps reduce particle generation within the chamber 102, as particles that could fall out during the subsequent operation of the chamber 102 do not remain trapped within the openings 106A, 106B.Furthermore, the insert liners 2101, 2101A, and 2101B help prevent leaks through the access control device 1301 and maintain the integrity of the vacuum in the chamber 102 by assisting in the capture of by-products that accumulate in the opening 106A.

[0194] Figure 30 is a flowchart illustrating a method for plasma treatment of a substrate according to several embodiments. The method comprises an operation 3001 for preparing a plasma treatment chamber (i.e., chamber 102) having a plasma treatment area 109 through which plasma is generated during the operation of the chamber 102. The chamber 102 comprises a wall 105 that forms part of an enclosure around the plasma treatment area 109. The wall 105 comprises ports (e.g., openings 106A, 106B) formed through the wall 105. In some embodiments, the ports are substrate access ports through which the substrate 101 is inserted into and removed from the chamber 102. In some embodiments, the ports are viewports configured to allow observation of the plasma treatment area 109.

[0195] The method comprises an operation 3003 for positioning an insert liner (e.g., insert liners 2101, 2101A, 2101B, 2103, 2601, 2701, 2801) within the port. The insert liner is configured to cover the inner surface of the port. The insert liner is shaped such that it substantially covers the inner surface of the port when the insert liner is positioned within the port. In some embodiments, the insert liner includes a processing exposure surface that is fluidly exposed to the plasma processing area 109 when the insert liner is positioned within the port, and the processing exposure surface is tuned to facilitate the adhesion of plasma processing byproducts to the processing exposure surface. In some embodiments, the insert liner is configured to surround the open space within the port and provide a view through the open space within the port when the insert liner is positioned within the port. In some embodiments, the insert liner is configured to surround the open space within the port and cover the outer boundary of the open space within the port that is close to the outer surface of the wall 105 of the chamber 102 when the insert liner is placed in the port. In some embodiments, the insert liner is configured to surround the open space within the port and cover the inner boundary of the open space within the port that is close to the inner surface of the wall 105 of the chamber 102 when the insert liner is placed in the port. In some embodiments, the insert liner is configured to cover a portion of the inner surface of the wall 105 of the chamber 102 around the port when the insert liner is placed in the port. In some embodiments, operation 3003 includes the step of placing an insert plug (e.g., insert plug 2901) within the port.

[0196] The insert liner is configured to apply a spring force against the inner surface of the port to hold the insert liner in the correct position within the port. In some embodiments, the spring force applied by the insert liner against the inner surface of the port is sufficient to physically secure the insert liner within the port without the use of any further fixing mechanism. In some embodiments, operation 3003 includes the step of compressing the outer profile of the insert liner to allow insertion of the insert liner into the port, and the step of releasing the compression of the outer profile of the insert liner so that the insert liner applies a spring force against the inner surface of the port. In some embodiments, the insert liner has a first end separated from a second end by a gap that forms a discontinuity in the outer profile of the insert liner. In these embodiments, operation 3003 may include the step of compressing the outer profile of the insert liner to close the gap in order to allow insertion of the insert liner into the port.

[0197] The method further involves the substrate 101 The system includes an operation 3005 for generating plasma within a plasma processing region 109 by exposure to a plasma, where the plasma components interact with the material on the substrate 101 to produce plasma processing byproducts. In some embodiments, the material on the substrate 101 is a lead zirconate titanate (PZT) film. In some embodiments, the material on the substrate 101 is a platinum (Pt) film. In some embodiments, the material on the substrate 101 is a film that, when exposed to the plasma generated in operation 3005, causes a large amount of byproduct deposition within the chamber 102. The insert liner prevents the plasma processing byproducts from coming into contact with the inner surface of the port. In some embodiments, some of the plasma processing byproducts also adhere to the insert liner.

[0198] In some embodiments, the step of generating plasma in operation 3005 may include the step of applying high-frequency power to the processing gas in the plasma processing area 109. In some embodiments, the applied high-frequency power may be in the range of about 400W to about 1250W. However, it should be understood that in various embodiments, the applied high-frequency power may be less than 400W or greater than 1250W. In some embodiments, the high-frequency power is applied by a high-frequency signal having a frequency of about 13.56MHz. However, it should be understood that in various embodiments, the high-frequency power may be applied by a high-frequency signal having a frequency different from 13.56MHz. And, in some embodiments, the method may include an operation for generating a bias voltage in the substrate support structure 103. In some embodiments, the bias voltage is generated in the range of about 100V to about 600V. However, it should be understood that in various embodiments, the bias voltage may be less than 100V or greater than 600V. And, in some embodiments, the bias voltage may be generated by a high-frequency signal having a frequency of about 13.56MHz. However, it should be understood that in various embodiments, the bias voltage may be generated by a high-frequency signal having a frequency different from 13.56 MHz. Also, in various embodiments, the bias voltage may be generated by a DC source.

[0199] Furthermore, in some embodiments, the method may include an operation to maintain the temperature of the substrate support structure 103 within a range of approximately 40°C to approximately 100°C. However, it should be understood that in various embodiments, the temperature of the substrate support structure 103 may be maintained at a value less than 40°C or greater than 100°C. Furthermore, in some embodiments, the method may include an operation to maintain the pressure within the plasma processing area 109 within a range of approximately 5 mmTorr to approximately 50 mmTorr. However, it should be understood that in various embodiments, the pressure within the plasma processing area 109 may be maintained at a value less than 5 mmTorr or greater than 50 mmTorr.

[0200] In some embodiments, the step of generating plasma in operation 3005 includes the step of supplying a process gas to the plasma processing area 109, where the process gas is one or more of chlorine (Cl2), boron trichloride (BCl3), argon (Ar), carbon tetrafluoride (CF4), oxygen (O2), trifluoromethane (CHF3), and sulfur hexafluoride (SF6). In some embodiments, the step of generating plasma in operation 3005 includes the step of supplying chlorine (Cl2) to the plasma processing area 109 at a flow rate in the range of about 20 sccm to about 300 sccm. In some embodiments, the step of generating plasma in operation 3005 includes the step of supplying boron trichloride (BCl3) to the plasma processing area 109 at a flow rate in the range of about 50 sccm to about 300 sccm. In some embodiments, the step of generating plasma in operation 3005 includes the step of supplying argon (Ar) to the plasma processing area 109 at a flow rate in the range of about 50 sccm to about 300 sccm. In some embodiments, the step of generating plasma in operation 3005 includes supplying carbon tetrafluoride (CF4) to the plasma processing area 109 at a flow rate in the range of about 50 sccm to about 200 sccm. In some embodiments, the step of generating plasma in operation 3005 includes supplying oxygen (O2) to the plasma processing area 109 at a flow rate in the range of about 20 sccm to about 300 sccm. In some embodiments, the step of generating plasma in operation 3005 includes supplying trifluoromethane (CHF3) to the plasma processing area 109 at a flow rate in the range of about 50 sccm to about 300 sccm. In some embodiments, the step of generating plasma in operation 3005 includes supplying sulfur hexafluoride (SF6) to the plasma processing area 109 at a flow rate in the range of about 50 sccm to about 300 sccm.

[0201] Figure 31 is a flowchart of a method for manufacturing insert liners (e.g., insert liners 2101, 2101A, 2101B, 2103, 2601, 2701, 2801) for a plasma processing chamber (e.g., chamber 102) according to several embodiments. The method comprises an operation 3101 for forming the insert liners to cover the inner surfaces of ports (e.g., openings 106A, 106B) formed through the wall 105 of chamber 102. The insert liners are configured to have sufficient mechanical flexibility to compress the outer surface profile of the insert liners in order to allow insertion of the insert liners into the ports. The insert liners are configured to exert a spring force on the inner surface of the ports when the compression of the outer surface profile of the insert liners is released.

[0202] Returning to Figure 1B, during the operation of the chamber 102, the process gas is drawn from the plasma processing area 109 through the exhaust channel 121 and duct / piping 122 to the pump 123 by the pump 123. Non-volatile and / or low-volatile plasma processing byproducts may be incorporated into the flow of process gas moving to the pump 123 through the exhaust channel 121 and duct / piping 122. As the system 100 operates, plasma processing byproducts may accumulate in the exhaust channel 121 and duct / piping 122 and the pump 123. In some embodiments, the pump 123 is a turbomolecular pump with a rotor equipped with turbine blades. Over time, plasma processing byproducts may clog the turbine blades of the pump 123, which can lead to seizure of the rotor's motion mechanism, resulting in increased operating temperature, increased power consumption, friction, wear, premature failure, and overall failure of the pump 123. Therefore, there is particular interest in reducing the amount of non-volatile and / or low-volatile plasma processing byproducts that reach pump 123, especially in plasma processing that generates large amounts of such byproduct materials (such as PZT etching and Pt etching).

[0203] Figure 32 shows an example of an exhaust baffle assembly 3200 positioned within the exhaust passage 121 of the exhaust assembly 119, according to several embodiments. In Figure 32, the exhaust assembly 119 is shown semi-transparently so that the exhaust baffle assembly 3200 is visible. Figure 33 shows an exhaust baffle assembly 3200 positioned within the exhaust passage 121 adjacent to the chamber 102, according to several embodiments. A cutaway view of the exhaust assembly 119 is shown in Figure 33 so that the exhaust baffle assembly 3200 is visible. Figure 34 is a vertical cross-sectional view, according to several embodiments, showing the chamber 102, the exhaust assembly 119, and the exhaust baffle assembly 3200, with the exhaust baffle assembly 3200 positioned at the exhaust port from the chamber 102.

[0204] In general, the exhaust baffle assembly 3200 functions to extend the operating life of the pump 123 by reducing the risks associated with the downstream deposition of non-volatile and / or low-volatile plasma processing byproducts. It should be understood that by placing the exhaust baffle assembly 3200 in the exhaust flow path 121 between the chamber 102 and the pump 123, a redundant exhaust flow path is formed, and the exhaust baffle assembly 3200 functions to come into contact with and capture non-volatile and / or low-volatile plasma processing byproducts taken into the exhaust flow. Also, the surface texture and shape of the exhaust baffle assembly 3200 may be configured to promote the adhesion and retention of non-volatile and / or low-volatile plasma processing byproducts to the exhaust baffle assembly 3200 until a cleaning process of the chamber 102 is performed. During the cleaning of the chamber 102, the exhaust baffle assembly 3200 can be removed for cleaning and a new / clean exhaust baffle assembly 3200 can be installed.

[0205] Figure 35 is an isometric view showing an example exhaust baffle assembly 3200 according to several embodiments. The exhaust baffle assembly 3200 comprises an upper bar 3501, a bottom bar 3503, a first vertical support 3505A, a second vertical support 3505B, and five baffle members 3507A to 3507E. Figure 36 is a front view showing the exhaust baffle assembly 3200 according to several embodiments. Figure 37 is a side view showing the exhaust baffle assembly 3200 according to several embodiments. In some embodiments, the exhaust baffle assembly 3200 is configured such that the baffle members 3507A to 3507E are inserted into slots / notches formed in the first vertical support 3505A and the second vertical support 3505B, and each of the first vertical support 3505A and the second vertical support 3505B is fixed to both the upper bar 3501 and the bottom bar 3503. In various embodiments, each of the first vertical support 3505A and the second vertical support 3505B may be fixed to both the upper bar 3501 and the bottom bar 3503 by welding, by fasteners such as mechanical screws, or by a combination thereof. It should be understood from Figures 36 and 37 that essentially all of the exhaust flow from the plasma processing area 109 is redirected by the combination of baffle members 3507A to 3507E. Therefore, in some embodiments, the combination of baffle members 3507A to 3507E is configured to extend across essentially all of the flow path through the exhaust passage 121 so as to cross the main exhaust flow direction 3701.

[0206] It should be understood that in various embodiments, the exhaust baffle assembly 3200 may be configured to include one or more baffle members (e.g., 3507A-3507E). In various embodiments, the exhaust baffle assembly 3200 may have fewer or more baffle members than five (e.g., 3507A-3507E). The baffle members 3507A-3507E are configured to redirect the exhaust flow so that plasma processing byproducts in the exhaust flow collide with the baffle members 3507A-3507E. In some embodiments, the baffle members 3507A-3507E are oriented at an angle of about 45 degrees with respect to the main exhaust flow direction 3701, as shown in Figure 37. However, it should be understood that in various embodiments, the baffle members 3507A-3507E may be oriented at an angle other than 45 degrees with respect to the main exhaust flow direction 3701. In some embodiments, the baffle members 3507A to 3507E may be oriented at an angle to the main exhaust flow direction 3701 in the range of about 25 to about 75 degrees. Furthermore, in some embodiments, each baffle member 3507A to 3507E may be oriented at substantially the same angle to the main exhaust flow direction 3701. However, in some embodiments, different baffle members 3507A to 3507E may be oriented at different angles to the main exhaust flow direction 3701. Also, in some embodiments, one or more angles of the baffle members 3507A to 3507E are adjustable.

[0207] Furthermore, as shown in Figure 37, in some embodiments, adjacent members of the baffle members 3507A to 3507E may be arranged according to substantially equal vertical separation distances 3703. However, in some embodiments, the vertical separation distances 3703 may differ between different adjacent members of the baffle members 3507A to 3507E. Also, as shown in Figure 35, in some embodiments, each baffle member 3507A to 3507E has substantially the same shape and size. However, in some embodiments, the shapes and / or sizes of different baffle members 3507A to 3507E may differ. The shapes, sizes, and relative positions of the baffle members 3507A to 3507E may be specified to optimize the capture of exhaust flow and by-products taken into the exhaust baffle assembly 3200, while ensuring that sufficient exhaust flow rate is maintained and that the pump 123 is not subjected to excessive load due to limitations in the exhaust flow area caused by the exhaust baffle assembly 3200. In some embodiments, the exhaust baffle assembly 3200 is configured to reduce the normal open cross-sectional flow area in the exhaust passage 121 by an amount ranging from about 20% to about 30%.

[0208] In some embodiments, the exhaust baffle assembly 3200 is formed of aluminum or hard anodized aluminum. However, it should be understood that in various embodiments, the exhaust baffle assembly 3200 may be formed of essentially any material that is chemically, mechanically, thermally, and electrically suitable for exposure to the exhaust flow in the exhaust passage 121. Also, in some embodiments, the surface of the exhaust baffle assembly 3200 may be tuned to promote the adhesion of plasma treatment byproducts to the surface of the exhaust baffle assembly 3200. In some embodiments, the exhaust baffle assembly 3200 may be formed to have a predetermined mean surface roughness (Ra) that promotes the adhesion and retention of plasma treatment byproducts. In some embodiments, the surface of the exhaust baffle assembly 3200 has a mean surface roughness (Ra) in the range of about 150 microinches to about 500 microinches. Also, in some embodiments, the exhaust baffle assembly 3200 may be formed to have a surface coating (in particular, such as an yttria coating or an anodized coating).

[0209] According to several embodiments, the surface of the exhaust baffle assembly 3200 is roughened by media blasting. In various embodiments, media blasting may be specified and performed to increase surface roughness, create a high contact angle on the surface, and increase the overall surface area of ​​the exhaust baffle assembly 3200. In various embodiments, media blasting may be specified and performed to affect the surface of the exhaust baffle assembly 3200 with media including, in particular, one or more of the following media types: aluminum oxide, silicon carbide, crushed glass grit, glass beads, ceramic, glass, walnut shells, pumice, steel grit, steel shot, aluminum shot, zinc shot, copper shot, cut wire, garnet, silica sand, and staurolite. It should be understood that in some embodiments, media blasting can impart a predetermined roughness / texture to the surface of the exhaust baffle assembly 3200 substantially uniformly.

[0210] In various embodiments, the exhaust baffle assembly 3200 may be configured to be introduced into the exhaust passage 121 with or without the use of a fixing device. In some embodiments, the exhaust baffle assembly 3200 is configured to engage with one or more corresponding structures in the exhaust passage 121 such that the exhaust baffle assembly 3200 is held in place by one or more corresponding structures in the exhaust passage 121 without the use of a fixing device. For example, in some embodiments, the bottom bar 3503 may have a plurality of projections that fit into corresponding holes in the bottom of the exhaust passage 121 at a position immediately downstream from the chamber 102, and / or the top bar 3501 may have a plurality of projections that fit into corresponding holes in the top of the exhaust passage 121 at a position immediately downstream from the chamber 102.

[0211] The exhaust baffle assembly 3200 provides physical capture and retention of non-volatile and / or low-volatile plasma processing byproducts taken into the exhaust flow moving from the plasma processing area 109 to the exhaust pump 123. Because the exhaust baffle assembly 3200 reduces the amount of non-volatile and / or low-volatile plasma processing byproducts moving through the exhaust flow path 121 and duct / piping 122, it functions to shorten the MTTC of system 100, thereby reducing chamber 102 downtime and correspondingly increasing the manufacturing throughput of substrate 101. Also, in some embodiments, the exhaust baffle assembly 3200 can be quickly removed and replaced with a clean exhaust baffle assembly 3200 during cleaning of chamber 102, thus helping to shorten MTTC in chamber 102. In some embodiments, the exhaust baffle assembly 3200 may be cleaned and refurbished for reuse, which results in reduced operating costs for system 100.

[0212] Furthermore, the exhaust baffle assembly 3200 reduces the amount of non-volatile and / or low-volatile plasma processing byproducts entering the pump 123, thereby extending the operating life of the pump 123 and reducing the likelihood of premature failure of the pump 123, particularly with respect to the deposition of byproducts on the blades within the pump 123 and the intrusion of byproducts into the bearing area within the pump 123. In addition, because the exhaust baffle assembly 3200 functions to capture some of the byproducts, there is less deposition of byproducts on the blades of the pump 123, allowing the pump 123 to maintain a high rotational speed over a longer operating time, which helps to maintain the target exhaust flow rate from the plasma processing area 109, thereby reducing process impact / drift caused by insufficient and / or changing exhaust flow rates from the plasma processing area 109. Furthermore, the exhaust baffle assembly 3200 functions to extend the mean time interval (MTBC) of the chamber 102. Since operational problems with pump 123 often lead to the shutdown of chamber 102, utilizing the baffle assembly 3200 to help protect pump 123 from by-product contamination can significantly increase chamber availability (e.g., over 90%) and reduce the replacement rate of pump 123, which in turn reduces the operating cost of system 100.

[0213] In some embodiments, the exhaust baffle assembly (e.g., 3200) comprises at least one baffle member (e.g., 3507A-3507E) configured to fit into the exhaust passage (e.g., 121) of a plasma processing chamber (e.g., 102). The at least one baffle member is shaped to deflect the processed exhaust gas flow when positioned in the exhaust passage. The outer surface of the at least one baffle member is tuned to promote the adhesion of plasma processing by-products present in the processed exhaust gas flow to the at least one baffle member. In some embodiments, the at least one baffle member has a substantially flat surface oriented at an angle across the direction of flow through the exhaust passage when the at least one baffle member is positioned in the exhaust passage. In some embodiments, the angle of the at least one baffle member is about 45 degrees with respect to the direction of flow. In some embodiments, the angle of the baffle member is adjustable. In some embodiments, the at least one baffle member is formed of anodized aluminum. In some embodiments, at least one baffle member has an average surface roughness in the range of about 150 microinches to about 500 microinches.

[0214] In some embodiments, the exhaust baffle assembly (e.g., 3200) comprises a frame configured to hold at least one baffle member. In some embodiments, the frame comprises a bottom bar (e.g., 3503), an upper bar (e.g., 3501), a first end bar (e.g., 3505A), and a second end bar (e.g., 3505B). The first end bar extends between the upper bar and the bottom bar, and the second end bar extends between the upper bar and the bottom bar. At least one baffle member extends from the first end bar to the second end bar. In some embodiments, the frame is formed of anodized aluminum. In some embodiments, the frame has an average surface roughness (Ra) in the range of about 150 microinches to about 500 microinches.

[0215] In some embodiments, the plasma processing system (e.g., system 100) comprises a plasma processing chamber (e.g., chamber 102) having a plasma processing region (e.g., 109) where plasma is generated during the operation of the plasma processing chamber. The plasma processing system also comprises an exhaust passage (e.g., exhaust passage 121) for the plasma processing chamber. The exhaust passage is in fluid communication with the plasma processing region. The exhaust passage is configured to direct the processing exhaust gas flow from the plasma processing region. The plasma processing system further comprises a pump (e.g., pump 123) connected to the exhaust passage. The pump is configured to create negative pressure inside the exhaust passage. The plasma processing system further comprises an exhaust baffle assembly (e.g., exhaust baffle assembly 3200) located within the exhaust passage. The exhaust baffle assembly comprises at least one baffle member (e.g., 3507A-3507E) shaped to deflect the processing exhaust gas flow within the exhaust passage. The outer surface of at least one baffle member is tuned to facilitate the adhesion of plasma treatment by-products present in the treated exhaust gas flow to at least one baffle member. In some embodiments, the exhaust baffle assembly is configured to extend essentially across the entire cross-sectional flow area within the exhaust flow path, so that the treated exhaust gas flow from the plasma treatment region needs to flow through the exhaust baffle assembly.

[0216] Figure 38 is a flowchart illustrating a method for plasma treatment of a substrate according to several embodiments. The method comprises operation 3801 for preparing a plasma treatment system (e.g., system 100) comprising a plasma treatment chamber (e.g., chamber 102) and an exhaust channel for the plasma treatment chamber (e.g., exhaust channel 121). The plasma treatment chamber comprises a plasma treatment area (e.g., 109) where plasma is generated during operation of the plasma treatment chamber. The exhaust channel is in fluid communication with the plasma treatment area. The exhaust channel is configured to direct the treatment exhaust gas flow from the plasma treatment area. The plasma treatment system comprises a pump (e.g., pump 123) connected to the exhaust channel. The pump is configured to create negative pressure inside the exhaust channel. The plasma treatment system comprises an exhaust baffle assembly (e.g., exhaust baffle assembly 3200) located within the exhaust channel. The exhaust baffle assembly comprises at least one baffle member shaped to deflect the treatment exhaust gas flow within the exhaust channel. The outer surface of at least one baffle member is adjusted to facilitate the adhesion of plasma treatment by-products present in the treated exhaust gas flow to at least one baffle member.

[0217] In some embodiments, the exhaust baffle assembly is configured to extend essentially across the entire cross-sectional flow area within the exhaust passage so that the processed exhaust gas flow from the plasma processing area needs to flow through the exhaust baffle assembly. In some embodiments, at least one baffle member has a substantially flat surface oriented at an angle across the direction of the main exhaust flow through the exhaust passage. In some embodiments, the angle of the at least one baffle member is about 45 degrees with respect to the direction of the main exhaust flow. In some embodiments, the angle of the at least one baffle member is adjustable. In some embodiments, the at least one baffle member is formed of anodized aluminum. In some embodiments, the at least one baffle member has an average surface roughness in the range of about 150 microinches to about 500 microinches.

[0218] The method further comprises operation 3803 for generating plasma within a plasma processing area by exposing the substrate. The method further comprises operation 3805 for operating a pump to create negative pressure inside the exhaust channel in order to draw the processed exhaust gas flow from the plasma processing area through the exhaust baffle assembly in the exhaust channel to the exhaust channel. Components of the plasma interact with the material on the substrate to produce plasma processing byproducts, some of which adhere to at least one baffle member of the exhaust baffle assembly. In some embodiments, the material on the substrate is either or both a lead zirconate titanate (PZT) film and a platinum (Pt) film.

[0219] Figure 39 is a flowchart of a method for manufacturing an exhaust baffle assembly (e.g., exhaust baffle assembly 3200) for use in a plasma processing system (e.g., system 100) according to several embodiments. The method comprises operation 3901 for forming at least one baffle member (e.g., 3507A-3507E) so as to fit into an exhaust passage (e.g., 121) of a plasma processing chamber (e.g., 102). The at least one baffle member is shaped to deflect the processed exhaust gas flow when placed in the exhaust passage. The method further comprises operation 3903 for adjusting the outer surface of the at least one baffle member to facilitate the adhesion of plasma processing by-products present in the processed exhaust gas flow to the at least one baffle member. In some embodiments, the at least one baffle member is formed to have a substantially flat surface oriented at an angle to the direction of the main exhaust flow through the exhaust passage when the at least one baffle member is placed in the exhaust passage. In some embodiments, at least one baffle member has a substantially flat surface oriented at an angle across the direction of the main exhaust flow through the exhaust passage. In some embodiments, the angle of the at least one baffle member is about 45 degrees with respect to the direction of the main exhaust flow. In some embodiments, the angle of the at least one baffle member is adjustable. In some embodiments, the at least one baffle member is formed of anodized aluminum. In some embodiments, the at least one baffle member has an average surface roughness in the range of about 150 microinches to about 500 microinches.

[0220] In some embodiments, the method comprises the step of forming a frame for holding at least one baffle member. The frame comprises a bottom bar (e.g., 3503), a top bar (e.g., 3501), a first end bar (e.g., 3505A), and a second end bar (e.g., 3505B). The first end bar extends between the top bar and the bottom bar. The second end bar extends between the top bar and the bottom bar. At least one baffle member extends from the first end bar to the second end bar. In some embodiments, the frame is formed of anodized aluminum. In some embodiments, the frame has an average surface roughness in the range of about 150 microinches to about 500 microinches.

[0221] To enhance understanding, the present invention has been described in some detail, but it is clear that some modifications and variations may be made within the scope of the appended claims. Therefore, these embodiments are considered illustrative and not limiting, and the present invention is not limited to the details shown herein and may be modified within the scope of the embodiments described and their equivalents. The present invention can also be realized in the following embodiments, for example. Application Example 1: A surface texture processing plasma treatment chamber component, It comprises a ceramic component configured to be placed inside a plasma processing chamber, The ceramic component comprises at least one roughened surface oriented to be exposed to plasma processing byproducts when the ceramic component is placed in the plasma processing chamber during operation of the plasma processing chamber, wherein the at least one roughened surface is configured to promote the adhesion of the plasma processing byproducts to the ceramic component. Application example 2: A surface texture processing plasma treatment chamber component according to claim 1, wherein the ceramic component is formed of aluminum oxide. Application Example 3: A surface textured plasma processing chamber component according to claim 1, wherein at least one roughened surface has an average surface roughness in the range of about 3.81 micrometers (about 150 microinches) to about 12.7 micrometers (about 500 microinches). Application Example 4: A surface texture processing plasma processing chamber component according to claim 1, wherein the ceramic bare material forming the ceramic component is exposed on at least one rough surface. Application Example 5: A surface texture processing plasma processing chamber component according to claim 1, wherein at least one roughened surface is roughened by media blasting. Application example 6: A surface texture processing plasma processing chamber component according to claim 5, wherein the media blasting process is performed with a media comprising one or more of the following: aluminum oxide, silicon carbide, crushed glass grit, glass beads, ceramics, glass, walnut shells, pumice, steel grit, steel shot, aluminum shot, zinc shot, copper shot, cut wire, garnet, silica sand, and staurolite, which affects the at least one roughened surface. Application example 7: A surface textured plasma processing chamber component according to claim 1, wherein the at least one rough surface is partially formed by knurling before firing of the ceramic component. Application Example 8: A surface textured plasma processing chamber component according to claim 1, wherein the ceramic component is an upper window structure installed in the plasma processing chamber, the upper window structure having a bottom surface, the bottom surface having at least one roughened region oriented to be exposed to plasma processing byproducts when the upper window structure is positioned in the plasma processing chamber during operation of the plasma processing chamber. Application example 9: A surface textured plasma processing chamber component according to claim 8, wherein the bottom surface comprises an outer ring-shaped region configured to engage with a sealing component, the at least one roughened region is surrounded by the outer ring-shaped region, the at least one roughened region is roughened to have an average surface roughness in the range of about 3.81 micrometers (about 150 microinches) to about 12.7 micrometers (about 500 microinches), and the outer ring-shaped region is smoothed to have an average surface roughness of about 20 microinches (about 0.508 millimeters). Application Example 10: A surface-textured plasma processing chamber component according to claim 1, wherein the ceramic component is a liner structure installed in the plasma processing chamber, the liner structure is configured to extend around at least a portion of the plasma processing area in the plasma processing chamber, and the liner structure has an inner surface which is the at least one rough surface oriented to be exposed to plasma processing byproducts when the liner structure is placed in the plasma processing chamber during operation of the plasma processing chamber. Application Example 11: A surface textured plasma processing chamber component according to claim 1, wherein the ceramic component is a ring structure installed in the plasma processing chamber, the ring structure is configured to surround a substrate support structure in the plasma processing chamber, the ring structure has at least one processing exposure surface which is one or both of the inner surface and / or upper surface of the ring structure, the at least one processing exposure surface which is at least one rough surface which is directed to be exposed to plasma processing byproducts when the ring structure is placed in the plasma processing chamber during operation of the plasma processing chamber. Application Example 12: A surface texture processing plasma processing chamber component according to claim 11, wherein the ring structure is either a focus ring structure or an edge ring structure. Application Example 13: A plasma processing chamber, A substrate support structure configured to hold the substrate by exposing it to the plasma during the operation of the plasma processing chamber, The upper window structure, Equipped with, A plasma processing chamber comprising an upper window structure positioned above the substrate support structure to establish a plasma processing region between the substrate support structure and the upper window structure, wherein the upper window structure is made of a ceramic material and has a bottom surface facing the plasma processing region, and the bottom surface has a surface roughness that promotes the adhesion of plasma processing by-products to the bottom surface. Application Example 14: A plasma processing chamber according to claim 13, wherein the upper window structure is made of aluminum oxide. Application Example 15: A plasma processing chamber according to claim 13, wherein the bottom surface of the upper window structure has an average surface roughness in the range of about 3.81 micrometers (about 150 microinches) to about 12.7 micrometers (about 500 microinches). Application Example 16: A plasma processing chamber according to claim 13, wherein the ceramic bare material forming the upper window structure is exposed on the bottom surface of the upper window structure. Application Example 17: A plasma processing chamber according to claim 13, further, The liner structure is configured to extend around at least a portion of the plasma processing area within the plasma processing chamber, A plasma treatment chamber wherein the liner structure is formed of a ceramic material, the liner structure has an inner surface facing the plasma treatment area, and the inner surface has a surface roughness that promotes the adhesion of plasma treatment by-products to the inner surface. Application Example 18: A plasma processing chamber according to claim 17, wherein the liner structure is made of aluminum oxide. Application Example 19: A plasma processing chamber according to claim 17, wherein the inner surface of the liner structure has an average surface roughness in the range of about 3.81 micrometers (about 150 microinches) to about 12.7 micrometers (about 500 microinches). Application Example 20: A plasma processing chamber according to claim 17, wherein the ceramic bare material forming the liner structure is exposed on the inner surface of the liner structure. Application Example 21: A plasma processing chamber according to claim 13, further, The plasma processing chamber includes a ring structure configured to surround the substrate support structure, A plasma processing chamber wherein the ring structure has at least one processing exposure surface which is one or both of the inner surface and / or upper surface of the ring structure facing the plasma processing area, and the at least one processing exposure surface has a surface roughness that promotes the adhesion of plasma processing byproducts to the at least one processing exposure surface. Application Example 22: A plasma processing chamber according to claim 21, wherein the ring structure is a focus ring structure, a ground ring structure, or an edge ring structure. Application Example 23: A plasma processing chamber according to claim 21, wherein the ring structure is made of aluminum oxide. Application Example 24: A plasma processing chamber according to claim 21, wherein the at least one processing exposure surface of the ring structure has an average surface roughness in the range of about 3.81 micrometers (about 150 microinches) to about 12.7 micrometers (about 500 microinches). Application Example 25: A plasma processing chamber according to claim 21, wherein the ceramic bare material forming the ring structure is exposed on the processing exposure surface of the ring structure. Application Example 26: A plasma processing chamber according to claim 13, further, The coil assembly is located above the upper window structure, A plasma processing chamber in which the coil assembly is configured to transmit high-frequency power to the plasma processing area through the upper window structure. Application Example 27: A method for plasma treatment of a substrate, A step of preparing a plasma processing chamber comprising a substrate support structure and an upper window structure, wherein the substrate support structure is configured to hold the substrate and expose it to plasma, the upper window structure is positioned above the substrate support structure to establish a plasma processing region between the substrate support structure and the upper window structure, the upper window structure is formed of a ceramic material, the upper window structure has a bottom surface facing the plasma processing region, and the bottom surface has a surface roughness that promotes the adhesion of plasma processing by-products to the bottom surface, A step of generating plasma in the plasma processing region, wherein the components of the plasma interact with the material on the substrate to generate plasma processing by-products, and a portion of the plasma processing by-products adheres to the bottom surface of the upper window structure. A method that includes [a certain feature]. Application Example 28: A method according to claim 27, wherein the material on the substrate is one or both of a lead zirconate titanate film and a platinum film. Application Example 29: A method according to claim 28, wherein the step of generating the plasma includes the step of applying high-frequency power to a processing gas in the plasma processing area, the high-frequency power being in the range of about 400 watts (W) to about 1250 watts (W). Application Example 30: A method according to claim 29, wherein the high-frequency power is applied by a high-frequency signal having a frequency of about 13.56 MHz. Application Example 31: The method according to claim 29, further, The process includes generating a bias voltage in the aforementioned substrate support structure, The bias voltage is in the range of approximately 100V to approximately 600V. Application Example 32: The method according to claim 29, wherein the processing gas is chlorine (Cl 2 ), boron trichloride (BCl 3 ), argon (Ar), carbon tetrafluoride (CF) 4 ), oxygen (O 2 ), trifluoromethane (CHF 3 ), and sulfur hexafluoride (SF6). 6 A method that is one or more of the following: Application Example 33: The method according to claim 32, further, A method comprising the step of maintaining the temperature of the substrate support structure within a range of approximately 40 degrees Celsius (°C) to approximately 80 degrees Celsius. Application Example 34: The method according to claim 32, further, A method comprising the step of maintaining the pressure within the plasma processing area within a range of approximately 5 mm Torr to approximately 50 mm Torr. Application Example 35: The method according to claim 29, wherein the processing gas is supplied to the plasma processing area at a flow rate in the range of about 20 standard cubic centimeters per minute (sccm) to about 300 sccm, and is chlorine (Cl 2 Boron trichloride (BCl) is supplied to the plasma processing area at a flow rate in the range of approximately 50 sccm to approximately 300 sccm. 3 Argon (Ar) supplied to the plasma processing area at a flow rate in the range of approximately 50 sccm to approximately 300 sccm, and carbon tetrafluoride (CF) supplied to the plasma processing area at a flow rate in the range of approximately 50 sccm to approximately 200 sccm. 4 ), oxygen (O) supplied to the plasma processing area at a flow rate in the range of approximately 20 sccm to approximately 300 sccm. 2 ), trifluoromethane (CHF) supplied to the plasma processing area at a flow rate in the range of approximately 50 sccm to approximately 300 sccm. 3 ), and sulfur hexafluoride (SF6) supplied to the plasma processing area at a flow rate in the range of approximately 50 sccm to approximately 300 sccm. 6 A method that includes one or more of the following: Application Example 36: A method according to claim 27, wherein the upper window structure is made of aluminum oxide. Application Example 37: A method according to claim 27, wherein the bottom surface of the upper window structure has an average surface roughness in the range of about 3.81 micrometers (about 150 microinches) to about 12.7 micrometers (about 500 microinches). Application Example 38: A method according to claim 27, wherein the ceramic bare material forming the upper window structure is exposed on the bottom surface of the upper window structure. Application Example 39: The method according to claim 27, further, A method comprising the step of utilizing a liner structure in the plasma processing chamber, wherein the liner structure is configured to extend around at least a portion of the plasma processing area in the plasma processing chamber, the liner structure has an inner surface oriented to be exposed to the plasma processing byproducts, and the inner surface of the liner structure has a surface roughness that promotes the adhesion of the plasma processing byproducts to the inner surface of the liner structure. Application example 40: A method according to claim 39, wherein the liner structure is formed of aluminum oxide. Application Example 41: A method according to claim 39, wherein the inner surface of the liner structure has an average surface roughness in the range of about 3.81 micrometers (about 150 microinches) to about 12.7 micrometers (about 500 microinches). Application Example 42: A method according to claim 39, wherein the ceramic bare material forming the liner structure is exposed on the inner surface of the liner structure. Application Example 43: The method according to claim 27, further, A method comprising the step of utilizing a ring structure in the plasma processing chamber, wherein the ring structure is configured to surround the substrate support structure in the plasma processing chamber, the ring structure has at least one processing exposure surface which is one or both of the inner surface and the upper surface of the ring structure, the at least one processing exposure surface is oriented to be exposed to the plasma processing byproducts, and the processing exposure surface of the ring structure has a surface roughness which promotes the adhesion of the plasma processing byproducts to the processing exposure surface of the ring structure. Application Example 44: A method according to claim 43, wherein the ring structure is a focus ring structure, a ground ring structure, or an edge ring structure. Application Example 45: A method according to claim 43, wherein the ring structure is formed of aluminum oxide. Application Example 46: A method according to claim 43, wherein the treatment-exposed surface of the ring structure has an average surface roughness in the range of about 3.81 micrometers (about 150 microinches) to about 12.7 micrometers (about 500 microinches). Application Example 47: A method according to claim 43, wherein the ceramic bare material forming the ring structure is exposed on the treatment-exposed surface of the ring structure. Application Example 48: A method for manufacturing components for use in a plasma processing chamber, A step of forming a ceramic component to be installed in a plasma processing chamber, wherein the ceramic component has at least one processing exposure surface, A step of roughening at least one of the treatment-exposed surfaces so that it has an average surface roughness in the range of approximately 3.81 micrometers (approximately 150 microinches) to approximately 12.7 micrometers (approximately 500 microinches), A method that includes [a certain feature]. Application example 49: A method according to claim 48, wherein the step of roughening the at least one surface to be subjected to treatment is performed by media blasting. Application example 50: A method according to claim 49, wherein the media blast treatment is performed with a media comprising one or more of the following: aluminum oxide, silicon carbide, crushed glass grit, glass beads, ceramics, glass, walnut shells, pumice, steel grit, steel shot, aluminum shot, zinc shot, copper shot, cut wire, garnet, silica sand, and staurolite, affecting the at least one surface to be treated. Application Example 51: A method according to claim 48, wherein the step of roughening the at least one surface exposed to treatment is performed by knurling before firing the ceramic component. Application Example 52: A method according to claim 48, wherein the ceramic component is formed of aluminum oxide. Application Example 53: A method according to claim 48, wherein the ceramic bare material forming the ceramic component is exposed on the at least one treated exposed surface after roughening of the at least one treated exposed surface. Application Example 54: A method according to claim 48, wherein the ceramic component is any of an upper window structure, a liner structure, a focus ring structure, or an edge ring structure. Application Example 55: A method for converting a coated component used in a plasma processing chamber into a roughened component used in the plasma processing chamber, A step of removing a coating from a ceramic component to obtain a ceramic bare material forming the ceramic component, wherein the ceramic component is configured to be installed in a plasma processing chamber, and the ceramic component has at least one processing exposure surface. A step of roughening at least one of the treatment-exposed surfaces so that it has an average surface roughness in the range of approximately 3.81 micrometers (approximately 150 microinches) to approximately 12.7 micrometers (approximately 500 microinches), A method that includes [a certain feature]. Application Example 56: A method according to claim 55, wherein the step of roughening the at least one surface to be subjected to treatment is performed by media blasting. Application Example 57: A method according to claim 56, wherein the media blast treatment is performed with a media comprising one or more of the following: aluminum oxide, silicon carbide, crushed glass grit, glass beads, ceramics, glass, walnut shells, pumice, steel grit, steel shot, aluminum shot, zinc shot, copper shot, cut wire, garnet, silica sand, and staurolite, affecting the at least one treatment-exposed surface. Application Example 58: A method according to claim 55, wherein the ceramic component is formed of aluminum oxide. Application example 59: A method according to claim 55, wherein the ceramic bare material forming the ceramic component is exposed on the at least one treated exposed surface after roughening of the at least one treated exposed surface. Application example 60: A method according to claim 55, wherein the ceramic component is any of an upper window structure, a liner structure, a focus ring structure, or an edge ring structure. Application Example 61: A focus ring used in a plasma processing chamber, It has a ring structure made of ceramic material, The ring structure is configured to surround a substrate support structure within a plasma processing chamber, and the ring structure has an inner surface oriented to be exposed to plasma processing byproducts when the ring structure is positioned within the plasma processing chamber during operation of the plasma processing chamber, and the inner surface is formed to have controlled surface topographic variations that promote the adhesion of the plasma processing byproducts to the inner surface, the focus ring. Application Example 62: A focus ring according to claim 61, wherein the controlled surface topography variation comprises a grid of convex structures extending inward toward the region enclosed by the ring structure. Application example 63: A focus ring according to claim 62, wherein the convex grid is one or more of a square grid, a hexagonal grid, a rectangular grid, a parallelogram grid, and a rhombic grid. Application Example 64: A focus ring according to claim 62, wherein each convex structure has a dome shape. Application Example 65: A focus ring according to claim 62, wherein the spacing between adjacent convex structures is in the range of about 0.5 mm to about 2 mm. Application Example 66: A focus ring according to claim 62, wherein the distance between adjacent convex structures is about 1 millimeter. Application Example 67: A focus ring according to claim 62, wherein each convex structure extends inward toward the region enclosed by the ring structure for a distance of about 0.5 mm to about 2 mm, or for a distance of about 1 mm to about 2 mm, or for a distance of about 1 mm. Application Example 68: A focus ring according to claim 62, wherein each convex structure has a base width in the range of about 1 mm to about 3 mm, or a base width in the range of about 2 mm to about 3 mm, or a base width of about 2.5 mm. Application example 69: A focus ring according to claim 62, wherein the inner surface has an average surface roughness in the range of about 3.81 micrometers (about 150 microinches) to about 12.7 micrometers (about 500 microinches). Application example 70: A focus ring according to claim 61, wherein the ring structure is formed of aluminum oxide. Application Example 71: A focus ring according to claim 61, wherein the ring structure is a hollow straight cylinder. Application example 72: A focus ring according to claim 71, further, The ring structure comprises three radial extension structures configured to extend radially outward from the outer surface of the ring structure, A focus ring, wherein the three radial extensions are spaced apart along the outer circumference of the ring structure, and the three radial extensions are configured to engage with each of the three lift components to allow the ring structure to be raised and lowered relative to the substrate support structure when the ring structure is placed in the plasma processing chamber. Application example 73: A focus ring according to claim 72, wherein the inner surface of the ring structure, the upper surface of the ring structure, and the upper surfaces of the three radial extension structures have an average surface roughness in the range of about 3.81 micrometers (about 150 microinches) to about 12.7 micrometers (about 500 microinches). Application Example 74: A plasma processing chamber, A substrate support structure configured to hold the substrate by exposing it to the plasma during the operation of the plasma processing chamber, A focus ring with a ring structure made of ceramic material, Equipped with, A plasma processing chamber wherein the ring structure is configured to surround the substrate support structure within the plasma processing chamber, the ring structure has an inner surface oriented to be exposed to plasma processing byproducts during the operation of the plasma processing chamber, and the inner surface is formed to have controlled surface topographic variations that promote the adhesion of the plasma processing byproducts to the inner surface. Application example 75: A plasma processing chamber according to claim 74, wherein the controlled surface topography variation comprises a grid of convex structures extending inward toward the region enclosed by the ring structure. Application Example 76: A plasma processing chamber according to claim 75, wherein the convex grid is one or more of a square grid, a hexagonal grid, a rectangular grid, a parallelogram grid, and a rhombic grid. Application example 77: A plasma processing chamber according to claim 75, wherein each convex structure has a dome shape. Application Example 78: A plasma processing chamber according to claim 75, wherein the spacing between adjacent convex structures is in the range of about 0.5 mm to about 2 mm. Application Example 79: A plasma processing chamber according to claim 75, wherein the spacing between adjacent convex structures is about 1 millimeter. Application Example 80: A plasma processing chamber according to claim 75, wherein each convex structure extends inward toward the region surrounded by the ring structure for a distance of about 0.5 mm to about 2 mm, or for a distance of about 1 mm to about 2 mm, or for a distance of about 1 mm. Application Example 81: A plasma processing chamber according to claim 75, wherein each convex structure has a bottom width in the range of about 1 mm to about 3 mm, or a bottom width in the range of about 2 mm to about 3 mm, or a bottom width of about 2.5 mm. Application Example 82: A plasma processing chamber according to claim 75, wherein the inner surface has an average surface roughness in the range of about 3.81 micrometers (about 150 microinches) to about 12.7 micrometers (about 500 microinches). Application Example 83: A plasma processing chamber according to claim 74, wherein the ring structure is made of aluminum oxide. Application Example 84: A plasma processing chamber according to claim 74, wherein the ring structure is a hollow straight cylinder. Application Example 85: A plasma processing chamber according to claim 84, further, The ring structure comprises three radial extension structures configured to extend radially outward from the outer surface of the ring structure, A plasma processing chamber in which the three radial extension structures are spaced apart along the outer circumference of the ring structure, and the three radial extension structures are configured to engage with each of the three lift components to allow the ring structure to be raised and lowered relative to the substrate support structure. Application Example 86: A plasma processing chamber according to claim 85, wherein the inner surface of the ring structure, the upper surface of the ring structure, and the upper surfaces of the three radial extension structures have an average surface roughness in the range of about 3.81 micrometers (about 150 microinches) to about 12.7 micrometers (about 500 microinches). Application Example 87: A method for plasma treatment of a substrate, A step of preparing a plasma processing chamber comprising a substrate support structure and a focus ring, wherein the focus ring comprises a ring structure made of a ceramic material, the ring structure is configured to surround the substrate support structure within the plasma processing chamber, the ring structure has an inner surface oriented to be exposed to plasma processing byproducts during the operation of the plasma processing chamber, and the inner surface is formed to have controlled surface topographic variations that promote the adhesion of the plasma processing byproducts to the inner surface, A step of generating plasma in a plasma processing region above the substrate support structure, wherein the components of the plasma interact with the material on the substrate to generate plasma processing by-products, and a portion of the plasma processing by-products adheres to the inner surface of the ring structure. A method that includes [a certain feature]. Application Example 88: A method according to claim 87, wherein the material on the substrate is one or both of a lead zirconate titanate film and a platinum film. Application Example 89: A method according to claim 88, wherein the step of generating the plasma includes the step of applying high-frequency power to a processing gas in the plasma processing area, the high-frequency power being in the range of about 400 watts (W) to about 1250 watts (W). Application example 90: A method according to claim 89, wherein the high-frequency power is applied by a high-frequency signal having a frequency of about 13.56 MHz. Application Example 91: The method according to claim 89, further, A method comprising the step of generating a bias voltage in the substrate support structure, wherein the bias voltage is in the range of approximately 100V to approximately 600V. Application Example 92: The method according to claim 89, wherein the processing gas is chlorine (Cl 2 ), boron trichloride (BCl 3 ), argon (Ar), carbon tetrafluoride (CF) 4 ), oxygen (O 2 ), trifluoromethane (CHF 3 ), and sulfur hexafluoride (SF6). 6 A method that is one or more of the following: Application Example 93: The method according to claim 92, further, A method comprising the step of maintaining the temperature of the substrate support structure within a range of approximately 40 degrees Celsius (°C) to approximately 80 degrees Celsius. Application Example 94: The method according to claim 92, further, A method comprising the step of maintaining the pressure within the plasma processing area within a range of approximately 5 mm Torr to approximately 50 mm Torr. Application Example 95: The method according to claim 89, wherein the processing gas is supplied to the plasma processing area at a flow rate in the range of about 20 standard cubic centimeters per minute (sccm) to about 300 sccm, and is chlorine (Cl 2 Boron trichloride (BCl) is supplied to the plasma processing area at a flow rate in the range of approximately 50 sccm to approximately 300 sccm. 3 Argon (Ar) supplied to the plasma processing area at a flow rate in the range of approximately 50 sccm to approximately 300 sccm, and carbon tetrafluoride (CF) supplied to the plasma processing area at a flow rate in the range of approximately 50 sccm to approximately 200 sccm. 4 ), oxygen (O) supplied to the plasma processing area at a flow rate in the range of approximately 20 sccm to approximately 300 sccm. 2 ), trifluoromethane (CHF) supplied to the plasma processing area at a flow rate in the range of approximately 50 sccm to approximately 300 sccm. 3 ), and sulfur hexafluoride (SF6) supplied to the plasma processing area at a flow rate in the range of approximately 50 sccm to approximately 300 sccm. 6 A method that includes one or more of the following: Application Example 96: A method according to claim 87, wherein the ring structure is formed of aluminum oxide. Application Example 97: A method according to claim 87, wherein the inner surface of the ring structure has an average surface roughness in the range of about 3.81 micrometers (about 150 microinches) to about 12.7 micrometers (about 500 microinches). Application Example 98: A method according to claim 87, wherein the ceramic bearing material forming the ring structure is exposed on the inner surface of the ring structure. Application example 99: A method according to claim 87, wherein the ring structure is a hollow straight cylinder. Application Example 100: A method according to claim 99, wherein the focus ring comprises three radial extensions configured to extend radially outward from the outer surface of the ring structure, the three radial extensions being equally spaced along the outer circumference of the ring structure, and the three radial extensions being configured to engage with each of the three lift components to enable raising and lowering the ring structure relative to the substrate support structure. Application Example 101: A method according to claim 100, wherein the inner surface of the ring structure, the upper surface of the ring structure, and the upper surfaces of the three radial extension structures have an average surface roughness in the range of about 3.81 micrometers (about 150 microinches) to about 12.7 micrometers (about 500 microinches). Application Example 102: A method for manufacturing a focus ring for use in a plasma processing chamber, A step of forming a ring structure of a ceramic material, wherein the ring structure is configured to surround a substrate support structure in a plasma processing chamber, and the ring structure has an inner surface oriented so as to be exposed to plasma processing byproducts when the ring structure is placed in the plasma processing chamber during operation of the plasma processing chamber, A step of forming controlled surface topographic variations on the inner surface of the ring structure, wherein the controlled surface topographic variations promote the adhesion of plasma treatment by-products to the inner surface; A method that includes [a certain feature]. Application Example 103: A method according to claim 102, wherein the step of forming the controlled surface topographic variation on the inner surface of the ring structure is a step of performing a media blasting process through a mask deposited on the inner surface of the ring structure, the mask exposing a portion of the inner surface of the ring structure to be eroded in order to form the controlled surface topographic variation. Application Example 104: A method according to claim 103, wherein the media blasting treatment is performed by affecting the inner surface with a media comprising one or more of the following: aluminum oxide, silicon carbide, crushed glass grit, glass beads, ceramics, glass, walnut shells, pumice, steel grit, steel shot, aluminum shot, zinc shot, copper shot, cut wire, garnet, silica sand, and staurolite. Application Example 105: The method according to claim 103, further, A method comprising the step of roughening the inner surface of a ring structure after forming the controlled surface topographic variation on the inner surface of the ring structure, wherein the roughening is performed to give the inner surface of the ring structure an average surface roughness in the range of about 3.81 micrometers (about 150 microinches) to about 12.7 micrometers (about 500 microinches). Application Example 106: A method according to claim 105, wherein the step of roughening the inner surface is performed by the media blasting treatment. Application Example 107: A method according to claim 102, wherein the step of forming the controlled surface topographic variation on the inner surface of the ring structure includes the step of performing a knurling treatment on the inner surface before firing the ceramic material. Application Example 108: A method according to claim 102, wherein the ceramic material is aluminum oxide. Application Example 109: A method according to claim 102, wherein the ceramic material forming the ring structure is exposed on the inner surface after the controlled surface topographic variation has been formed on the inner surface of the ring structure. Application Example 110: A method according to claim 102, wherein the ring structure is a hollow straight cylinder. Application Example 111: A method according to claim 110, wherein the step of forming the ring structure includes the step of forming three radial extensions that extend radially outward from the outer surface of the ring structure, the three radial extensions being spaced apart along the outer circumference of the ring structure, and the three radial extensions being configured to engage with each of the three lift components to allow the ring structure to be raised and lowered relative to the substrate support structure when the ring structure is placed in the plasma processing chamber. Application Example 112: The method according to claim 111, further, A step of roughening the inner surface of the ring structure after forming the controlled surface topographic variation on the inner surface of the ring structure, wherein the roughening is performed to impart an average surface roughness to the inner surface of the ring structure in the range of about 3.81 micrometers (about 150 microinches) to about 12.7 micrometers (about 500 microinches). A step of roughening the upper surfaces of the three radially extended structures so that they have an average surface roughness in the range of approximately 3.81 micrometers (approximately 150 microinches) to approximately 12.7 micrometers (approximately 500 microinches), A method that includes [a certain feature]. Application Example 113: A substrate access port shield for use in a plasma processing chamber, The shield part, A first support portion extends from the first end of the shield portion and is configured to engage with a vertically movable component within the plasma processing chamber, A second support portion extends from the second end of the shield portion and is configured to engage with the vertically movable component in the plasma processing chamber, Equipped with, A substrate access port shield, wherein the shield portion and the first and second support portions form an integral shield structure extending along an arc, the vertical movement of the vertically movable component causes a corresponding vertical movement of the integral shield structure, the shield portion is configured such that the first and second support portions engage with the vertically movable component to at least partially cover the substrate access port opening of the plasma processing chamber when the vertically movable component is in a lower vertical position, and the shield portion is configured such that the first and second support portions engage with the vertically movable component to not cover the substrate access port opening of the plasma processing chamber when the vertically movable component is in an upper vertical position. Application Example 114: A substrate access port shield for use in a plasma processing chamber according to claim 113, wherein the shield portion is configured as part of a hollow straight cylinder. Application Example 115: A substrate access port shield for use in a plasma processing chamber according to claim 114, wherein the shield portion has a vertical height measured in the axial direction of the hollow straight cylinder, and the vertical height of the shield portion is such that the first and second support portions engage with the vertically movable component, so that when the vertically movable component is in the lower vertical position, the shield portion covers at least half of the vertical range of the substrate access port opening of the plasma chamber. Application Example 116: A substrate access port shield for use in a plasma processing chamber according to claim 114, wherein the shield portion has a vertical height measured in the axial direction of the hollow straight cylinder, and the vertical height of the shield portion is such that the first and second support portions engage with the vertically movable component, so that when the vertically movable component is in the lower vertical position, the shield portion covers at least two-thirds of the vertical range of the substrate access port opening of the plasma chamber. Application Example 117: A substrate access port shield for use in a plasma processing chamber according to claim 114, wherein the shield portion has a vertical height measured in the axial direction of the hollow straight cylinder, and the vertical height of the shield portion is such that the first and second support portions engage with the vertically movable component, so that when the vertically movable component is in the lower vertical position, the shield portion completely covers the vertical range of the substrate access port opening of the plasma chamber. Application Example 118: A substrate access port shield for use in a plasma processing chamber according to claim 113, wherein the shield portion is configured as a first portion of a hollow straight cylinder, the first support portion is configured as a second portion of the hollow straight cylinder, the second support portion is configured as a third portion of the hollow straight cylinder, the shield portion has a first vertical height measured in the axial direction of the hollow straight cylinder, the first support portion has a second vertical height measured in the axial direction of the hollow straight cylinder, and the second support portion has a third vertical height measured in the axial direction of the hollow straight cylinder. Application Example 119: A substrate access port shield for use in a plasma processing chamber according to claim 118, wherein the first vertical height, the second vertical height, and the third vertical height are substantially equal. Application Example 120: A substrate access port shield for use in a plasma processing chamber according to claim 118, wherein the first vertical height is different from the second vertical height and the third vertical height. Application Example 121: A substrate access port shield for use in a plasma processing chamber according to claim 120, wherein the second vertical height and the third vertical height are substantially equal. Application Example 122: A substrate access port shield for use in a plasma processing chamber according to claim 118, wherein the first vertical height is smaller than the second vertical height and the third vertical height, respectively. Application Example 123: A substrate access port shield for use in a plasma processing chamber according to claim 113, wherein the integral shield structure is formed of a ceramic material. Application Example 124: A substrate access port shield for use in a plasma processing chamber according to claim 123, wherein the ceramic material is aluminum oxide. Application Example 125: A substrate access port shield for use in a plasma processing chamber according to claim 123, wherein at least the inner surface of the integral shield structure has an average surface roughness in the range of about 3.81 micrometers (about 150 microinches) to about 12.7 micrometers (about 500 microinches). Application Example 126: A substrate access port shield for use in a plasma processing chamber according to claim 125, wherein the ceramic material forming the integral shield structure is exposed on the inner surface of the integral shield structure. Application Example 127: A substrate access port shield for use in a plasma processing chamber according to claim 113, wherein the vertically movable component is a focus ring structure. Application Example 128: A substrate access port shield for use in a plasma processing chamber according to claim 127, wherein the focus ring structure is configured to surround a substrate support structure in the plasma processing chamber, the focus ring structure comprises a ring portion formed as a hollow straight cylinder, and three radial extension structures configured to extend radially outward from the outer surface of the ring portion, the three radial extension structures are spaced apart along the outer circumference of the ring portion, the first support portion is configured to engage with the first structure of the three radial extension structures, and the second support portion is configured to engage with the second structure of the three radial extension structures. Application Example 129: A substrate access port shield for use in a plasma processing chamber according to claim 128, wherein the three radial extension structures are configured to engage with each of the three lift components to enable raising and lowering the combination of the focus ring structure and the integrated shield structure relative to the substrate support structure. Application Example 130: A substrate access port shield for use in a plasma processing chamber according to claim 128, wherein the first support portion is configured to engage with the third structure of the three radial extension structures. Application Example 131: A plasma processing chamber, A substrate support structure configured to hold the substrate by exposing it to the plasma during the operation of the plasma processing chamber, A focus ring structure configured to surround the substrate support structure within the plasma processing chamber, the focus ring structure comprising a ring portion formed as a hollow straight cylinder and three radial extension structures configured to extend radially outward from the outer surface of the ring portion, the three radial extension structures spaced apart along the outer circumference of the ring portion, An integral shield structure comprising a shield portion, a first support portion, and a second support portion, wherein the first support portion extends from a first end of the shield portion and is configured to engage with the first of the three radial extension structures of the focus ring structure, the second support portion extends from a second end of the shield portion and is configured to engage with the second of the three radial extension structures of the focus ring structure, the integral shield structure is formed to extend along an arc, the shield portion is configured to at least partially cover the substrate access port opening of the plasma processing chamber when the focus ring structure is in a lower vertical position, and the shield portion is configured not to cover the substrate access port opening of the plasma processing chamber when the focus ring structure is in an upper vertical position, and A plasma processing chamber equipped with the following features. Application Example 132: A plasma processing chamber according to claim 131, wherein the integral shield structure is removable from the focus ring structure. Application Example 133: A plasma processing chamber according to claim 131, wherein the integral shield structure is fixed to the focus ring structure by gravity. Application Example 134: A plasma processing chamber according to claim 131, wherein the integral shield structure is connected to the focus ring structure without fasteners. Application Example 135: Plasma processing chamber according to claim 131, wherein the first support portion comprises a slot configured to receive the first of the three radial extension structures of the focus ring structure, and the second support portion comprises a slot configured to receive the second of the three radial extension structures of the focus ring structure. Application Example 136: A plasma processing chamber according to claim 131, wherein either the first support portion or the second support portion is configured to engage with the third structure among the three radial extension structures of the focus ring structure. Application Example 137: A plasma processing chamber according to claim 136, wherein the first support portion comprises a slot configured to receive the first of the three radial extension structures of the focus ring structure, the second support portion comprises a slot configured to receive the second of the three radial extension structures of the focus ring structure, and either the first or second support portion comprises a slot configured to receive the third of the three radial extension structures of the focus ring structure. Application Example 138: A plasma processing chamber according to claim 131, further, The focus ring structure comprises three lift components configured to engage with the three radial extension structures, respectively. A plasma processing chamber in which the three lift components are configured to provide controlled vertical movement of the combination of the focus ring structure and the integrated shield structure relative to the substrate support structure. Application Example 139: A plasma processing chamber according to claim 131, wherein the shield portion of the integral shield structure is configured as part of a hollow straight cylinder, and the shield portion has a vertical height measured in the axial direction of the hollow straight cylinder. Application Example 140: Plasma processing chamber according to claim 139, wherein the vertical height of the shield portion allows the shield portion to cover at least half of the vertical range of the substrate access port opening of the plasma chamber when the focus ring structure is in the lower vertical position. Application Example 141: A plasma processing chamber according to claim 139, wherein the vertical height of the shield portion allows the shield portion to cover at least two-thirds of the vertical range of the substrate access port opening of the plasma chamber when the focus ring structure is in the lower vertical position. Application Example 142: A plasma processing chamber according to claim 139, wherein the vertical height of the shield portion allows the shield portion to completely cover the vertical range of the substrate access port opening of the plasma chamber when the focus ring structure is in the lower vertical position. Application Example 143: A plasma processing chamber according to claim 131, wherein the integral shield structure is made of a ceramic material. Application Example 144: A plasma processing chamber according to claim 143, wherein the ceramic material is aluminum oxide. Application Example 145: A plasma processing chamber according to claim 143, wherein at least the inner surface of the integral shield structure has an average surface roughness in the range of about 3.81 micrometers (about 150 microinches) to about 12.7 micrometers (about 500 microinches). Application Example 146: A plasma processing chamber according to claim 145, wherein the ceramic material forming the integral shield structure is exposed on the inner surface of the integral shield structure. Application Example 147: A method for plasma treatment of a substrate, A step of preparing a plasma processing chamber comprising a substrate support structure, a focus ring structure, and an integral shield structure, wherein the focus ring structure is configured to surround the substrate support structure, the focus ring structure comprises a ring portion formed as a hollow straight cylinder, and three radial extension structures configured to extend radially outward from the outer surface of the ring portion, the three radial extension structures are spaced apart along the outer circumference of the ring portion, the integral shield structure comprises a shield portion, a first support portion, and a second support portion, the first support portion extends from the first end of the shield portion, and the first support portion is the three of the focus ring structure The integral shield structure is configured to engage with a first structure of the radial extension structure, the second support portion extends from the second end of the shield portion, the second support portion is configured to engage with a second structure of the three radial extension structures of the focus ring structure, the integral shield structure is formed to extend along an arc, the shield portion is configured to at least partially cover the substrate access port opening of the plasma processing chamber when the focus ring structure is in the lower vertical position, and the shield portion is configured not to cover the substrate access port opening of the plasma processing chamber when the focus ring structure is in the upper vertical position, and the process is as follows: The steps include: positioning the focus ring structure at the lower vertical position, A step of generating plasma in the plasma processing region above the substrate support structure, A method that includes [a certain feature]. Application Example 148: A method according to claim 147, wherein the shield portion of the integral shield structure covers at least half of the vertical range of the substrate access port opening when the focus ring structure is positioned in the lower vertical position. Application Example 149: A method according to claim 147, wherein the shield portion of the integral shield structure covers at least two-thirds of the vertical range of the substrate access port opening when the focus ring structure is positioned in the lower vertical position. Application Example 150: A method according to claim 147, wherein the shield portion of the integral shield structure completely covers the vertical range of the substrate access port opening when the focus ring structure is positioned in the lower vertical position. Application Example 151: The method according to claim 147, further, A method comprising the step of connecting the integrated shield structure to the focus ring structure without fasteners. Application Example 152: A method according to claim 151, wherein the integral shield structure is fixed to the focus ring structure by gravity. Application Example 153: A method according to claim 151, wherein the step of connecting the integral shield structure to the focus ring structure without fasteners includes the steps of inserting the first of the three radial extension structures of the focus ring structure into a slot formed in the first support portion of the integral shield structure, and inserting the second of the three radial extension structures of the focus ring structure into a slot formed in the second support portion of the integral shield structure. Application Example 154: A method according to claim 153, wherein the step of connecting the integral shield structure to the focus ring structure without fasteners further includes the step of inserting the third of the three radial extension structures of the focus ring structure into a slot formed in either the first support portion or the second support portion of the integral shield structure. Application Example 155: A method according to claim 147, wherein the step of positioning the focus ring structure in the lower vertical position includes the step of acting three lift components that engage with the three radial extensions of the focus ring structure, respectively. Application Example 156: The method according to claim 147, further, A step of stopping the generation of the plasma in the plasma processing region above the substrate support structure, The steps include: positioning the focus ring structure in the upper vertical position; A method that includes [a certain feature]. Application Example 157: A method according to claim 147, wherein the integral shield structure is formed of a ceramic material. Application Example 158: A method according to claim 157, wherein the ceramic material is aluminum oxide. Application Example 159: A method according to claim 157, wherein at least the inner surface of the integral shield structure has an average surface roughness in the range of about 3.81 micrometers (about 150 microinches) to about 12.7 micrometers (about 500 microinches). Application Example 160: A method according to claim 159, wherein the ceramic material forming the integral shield structure is exposed on the inner surface of the integral shield structure. Application Example 161: A method according to claim 147, wherein the plasma components interact with the material on the substrate to generate plasma processing byproducts, and a portion of the plasma processing byproducts adheres to the shield portion of the integral shield structure. Application Example 162: A method according to claim 161, wherein the material on the substrate is one or both of a lead zirconate titanate film and a platinum film. Application Example 163: A method according to claim 162, wherein the step of generating the plasma includes the step of applying high-frequency power to a processing gas in the plasma processing area, the high-frequency power being in the range of about 400 watts (W) to about 1250 watts (W). Application Example 164: A method according to claim 163, wherein the high-frequency power is applied by a high-frequency signal having a frequency of about 13.56 MHz. Application Example 165: The method according to claim 163, further, The process includes generating a bias voltage in the aforementioned substrate support structure, The bias voltage is in the range of approximately 100V to approximately 600V. Application Example 166: The method according to claim 163, wherein the processing gas is chlorine (Cl 2 ), boron trichloride (BCl 3 ), argon (Ar), carbon tetrafluoride (CF) 4 ), oxygen (O 2 ), trifluoromethane (CHF 3 ), and sulfur hexafluoride (SF6). 6 A method that is one or more of the following: Application Example 167: The method according to claim 166, further, A method comprising the step of maintaining the temperature of the substrate support structure within a range of approximately 40 degrees Celsius (°C) to approximately 80 degrees Celsius. Application Example 168: The method according to claim 166, further, A method comprising the step of maintaining the pressure within the plasma processing area within a range of approximately 5 mm Torr to approximately 50 mm Torr. Application Example 169: The method according to claim 163, wherein the processing gas is supplied to the plasma processing area at a flow rate in the range of about 20 standard cubic centimeters per minute (sccm) to about 300 sccm, comprising chlorine (Cl 2 Boron trichloride (BCl) is supplied to the plasma processing area at a flow rate in the range of approximately 50 sccm to approximately 300 sccm. 3 Argon (Ar) supplied to the plasma processing area at a flow rate in the range of approximately 50 sccm to approximately 300 sccm, and carbon tetrafluoride (CF) supplied to the plasma processing area at a flow rate in the range of approximately 50 sccm to approximately 200 sccm. 4 ), oxygen (O) supplied to the plasma processing area at a flow rate in the range of approximately 20 sccm to approximately 300 sccm. 2 ), trifluoromethane (CHF) supplied to the plasma processing area at a flow rate in the range of approximately 50 sccm to approximately 300 sccm. 3 ), and sulfur hexafluoride (SF6) supplied to the plasma processing area at a flow rate in the range of approximately 50 sccm to approximately 300 sccm. 6 A method that includes one or more of the following: Application Example 170: A method for manufacturing a substrate access port shield for use in a plasma processing chamber, A method comprising the steps of forming an integral shield structure comprising a shield portion, a first support portion extending from a first end of the shield portion, and a second support portion extending from a second end of the shield portion, wherein the first support portion is configured to engage with a vertically movable component in a plasma processing chamber, the second support portion is configured to engage with the vertically movable component in the plasma processing chamber, the integral shield structure is formed to extend along an arc, the shield portion is configured such that the first and second support portions engage with the vertically movable component to at least partially cover the substrate access port opening of the plasma processing chamber when the vertically movable component is in a lower vertical position, and the shield portion is configured such that the first and second support portions engage with the vertically movable component to not cover the substrate access port opening of the plasma processing chamber when the vertically movable component is in an upper vertical position. Application Example 171: A method according to claim 170, wherein the integral shield structure is formed of a ceramic material. Application Example 172: A method according to claim 171, wherein the integral shield structure is formed of aluminum oxide. Application Example 173: The method according to claim 171, further, A method comprising the step of roughening at least the inner surface of the integral shield structure so that it has an average surface roughness in the range of approximately 3.81 micrometers (approximately 150 microinches) to approximately 12.7 micrometers (approximately 500 microinches). Application Example 174: A method according to claim 173, wherein the roughening step is performed by media blasting. Application Example 175: A method according to claim 174, wherein the media blasting treatment is performed with a media comprising one or more of the following: aluminum oxide, silicon carbide, crushed glass grit, glass beads, ceramics, glass, walnut shells, pumice, steel grit, steel shot, aluminum shot, zinc shot, copper shot, cut wire, garnet, silica sand, and staurolite, affecting the inner surface of the integral shield structure. Application Example 176: A method according to claim 173, wherein the roughening step includes a step of performing a knurling treatment before firing the ceramic material. Application Example 177: A method according to claim 173, wherein the ceramic material is exposed on the inner surface after the roughening. Application Example 178: A method according to claim 170, wherein the step of forming the integral shield structure includes the steps of forming a slot in the first support portion for receiving a first portion of the vertically movable component and forming a slot in the second support portion for receiving a second portion of the vertically movable component. Application Example 179: A method according to claim 178, wherein the step of forming the integral shield structure includes the step of forming a slot in either the first support portion or the second support portion for receiving a third portion of the vertically movable component. Application Example 180: An insert liner for the port of a plasma processing chamber, It includes an insert liner configured to cover the inner surface of a port formed through the wall of a plasma processing chamber, The insert liner is configured to have sufficient mechanical flexibility to compress its outer profile in order to allow insertion of the insert liner into the port, and the insert liner is configured to apply a spring force to the inner surface of the port when the compression of the outer profile of the insert liner is released. Application Example 181: A port shield for a plasma processing chamber according to claim 180, wherein the insert liner comprises a first end separated from a second end by a gap that forms a discontinuity in the outer surface profile of the insert liner. Application Example 182: A port shield for a plasma processing chamber according to claim 180, wherein the gap provides the insert liner with mechanical flexibility to the insert liner against compression of the outer surface profile of the insert liner in order to allow the insert liner to be inserted into the port. Application Example 183: A port shield for a plasma processing chamber according to claim 180, wherein the insert liner is formed of sheet metal. Application Example 184: A port shield for a plasma processing chamber according to claim 180, wherein the insert liner is formed of anodized aluminum sheet metal. Application Example 185: A port shield for a plasma processing chamber according to claim 180, wherein the insert liner is shaped to substantially cover the inner surface of the port. Application Example 186: A port shield for a plasma processing chamber according to claim 180, wherein the insert liner is configured to surround an open space within the port and to provide a view through the open space within the port. Application Example 187: A port shield for a plasma processing chamber according to claim 180, wherein the insert liner is configured to surround an open space within the port and to cover the outer boundary of the open space within the port in proximity to the outer surface of the wall of the plasma processing chamber. Application Example 188: A port shield for a plasma processing chamber according to claim 180, wherein the insert liner is configured to surround an open space in the port and cover the inner boundary of the open space in the port that is close to the inner surface of the wall of the plasma processing chamber. Application Example 189: A port shield for a plasma processing chamber according to claim 188, wherein the insert liner is configured to cover a portion of the inner surface of the wall of the plasma processing chamber around the port. Application Example 190: A port shield for a plasma processing chamber according to claim 180, wherein the port is a viewport configured to allow observation of an internal region of the plasma processing chamber. Application Example 191: A port shield for a plasma processing chamber according to claim 180, wherein the spring force applied by the insert liner to the inner surface of the port is sufficient to physically secure the insert liner within the port. Application Example 192: A port shield for a plasma processing chamber according to claim 180, wherein the insert liner comprises a processing exposure surface that is fluidly exposed to an internal region of the plasma processing chamber when the insert liner is inserted into the port, and the processing exposure surface is tuned to facilitate the adhesion of plasma processing by-products to the processing exposure surface. Application Example 193: A port shield for a plasma processing chamber according to claim 192, wherein the processing exposure surface has an average surface roughness in the range of about 3.81 micrometers (about 150 microinches) to about 12.7 micrometers (about 500 microinches). Application Example 194: A plasma processing system, A plasma processing chamber comprising a plasma processing region where plasma is generated during the operation of the plasma processing chamber, a wall forming part of an enclosure around the plasma processing region, and a port formed through the wall, An insert liner disposed within the port, wherein the insert liner is configured to cover the inner surface of the port, and the insert liner is configured to apply a spring force to the inner surface of the port in order to hold the insert liner in an appropriate position within the port; A plasma processing system equipped with the following features. Application Example 195: A plasma processing system according to claim 194, wherein the insert liner is configured to have sufficient mechanical flexibility to compress the outer surface profile of the insert liner in order to allow insertion of the insert liner into the port. Application Example 196: A plasma processing system according to claim 195, wherein the insert liner is configured to apply the spring force to the inner surface of the port when the compression of the outer surface profile of the insert liner is released. Application Example 197: A plasma processing system according to claim 196, wherein the insert liner comprises a first end separated from a second end by a gap that forms a discontinuity in the outer surface profile of the insert liner. Application Example 198: A plasma processing system according to claim 197, wherein the gap provides the insert liner with mechanical flexibility to the insert liner against compression of the outer profile of the insert liner in order to allow the insert liner to be inserted into the port. Application Example 199: A plasma treatment system according to claim 194, wherein the insert liner is formed of sheet metal. Application Example 200: A plasma treatment system according to claim 194, wherein the insert liner is formed of anodized aluminum sheet metal. Application Example 201: A plasma processing system according to claim 194, wherein the insert liner is shaped to substantially cover the inner surface of the port. Application Example 202: A plasma processing system according to claim 194, wherein the insert liner is configured to surround an open space within the port and to provide a view through the open space within the port. Application Example 203: A plasma processing system according to claim 194, wherein the insert liner is configured to surround the open space in the port and to cover the outer boundary of the open space in the port that is close to the outer surface of the wall of the plasma processing chamber. Application Example 204: A plasma processing system according to claim 194, wherein the insert liner is configured to surround the open space in the port and to cover the inner boundary of the open space in the port that is close to the inner surface of the wall of the plasma processing chamber. Application Example 205: A plasma processing system according to claim 204, wherein the insert liner is configured to cover a portion of the inner surface of the wall of the plasma processing chamber around the port. Application Example 206: A plasma processing system according to claim 194, wherein the port is a viewport configured to enable observation of the plasma processing area. Application Example 207: A plasma treatment system according to claim 194, wherein the spring force applied by the insert liner to the inner surface of the port is sufficient to physically fix the insert liner within the port. Application Example 208: A plasma treatment system according to claim 194, wherein the insert liner comprises a treatment exposure surface that is fluidly exposed to the plasma treatment area when the insert liner is inserted into the port, and the treatment exposure surface is adjusted to promote the adhesion of plasma treatment by-products to the treatment exposure surface. Application Example 209: A plasma treatment system according to claim 208, wherein the surface to be treated has an average surface roughness in the range of about 3.81 micrometers (about 150 microinches) to about 12.7 micrometers (about 500 microinches). Application Example 210: A method for plasma treatment of a substrate, A step of preparing a plasma processing chamber, wherein the plasma processing chamber comprises a plasma processing region where plasma is generated during the operation of the plasma processing chamber, the plasma processing chamber comprises a wall that forms part of an enclosure around the plasma processing region, and the wall comprises a port formed through the wall, A step of placing an insert liner in the port, wherein the insert liner is configured to cover the inner surface of the port, and the insert liner is configured to apply a spring force to the inner surface of the port in order to hold the insert liner in an appropriate position within the port; A step of generating plasma in the plasma processing region by exposing it to a substrate, wherein the components of the plasma interact with the material on the substrate to generate plasma processing byproducts, and the insert liner prevents the plasma processing byproducts from coming into contact with the inner surface of the port, A method that includes [a certain feature]. Application Example 211: A method according to claim 210, wherein a portion of the plasma treatment by-products adheres to the insert liner. Application Example 212: A method according to claim 210, wherein the material on the substrate is one or both of a lead zirconate titanate film and a platinum film. Application Example 213: A method according to claim 210, wherein the step of generating the plasma includes the step of applying high-frequency power to a processing gas in the plasma processing area, the high-frequency power being in the range of about 400 watts (W) to about 1250 watts (W). Application Example 214: A method according to claim 213, wherein the high-frequency power is applied by a high-frequency signal having a frequency of about 13.56 MHz. Application Example 215: The method according to claim 213, further, The process includes generating a bias voltage in a substrate support structure on which the aforementioned substrate is placed, The bias voltage is in the range of approximately 100 volts (V) to approximately 600 V. Application Example 216: The method according to claim 213, wherein the processing gas is chlorine (Cl 2 ), boron trichloride (BCl 3 ), argon (Ar), carbon tetrafluoride (CF) 4 ), oxygen (O 2 ), trifluoromethane (CHF 3 ), and sulfur hexafluoride (SF6). 6 A method that is one or more of the following: Application Example 217: The method according to claim 216, further, A method comprising the step of maintaining the temperature of a substrate support structure on which the substrate is placed within a range of approximately 40 degrees Celsius (°C) to approximately 80 degrees Celsius. Application Example 218: The method according to claim 216, further, A method comprising the step of maintaining the pressure within the plasma processing area within a range of approximately 5 mm Torr to approximately 50 mm Torr. Application Example 219: The method according to claim 213, wherein the processing gas is supplied to the plasma processing area at a flow rate in the range of about 20 standard cubic centimeters per minute (sccm) to about 300 sccm, comprising chlorine (Cl 2 Boron trichloride (BCl) is supplied to the plasma processing area at a flow rate in the range of approximately 50 sccm to approximately 300 sccm. 3 Argon (Ar) supplied to the plasma processing area at a flow rate in the range of approximately 50 sccm to approximately 300 sccm, and carbon tetrafluoride (CF) supplied to the plasma processing area at a flow rate in the range of approximately 50 sccm to approximately 200 sccm. 4 ), oxygen (O) supplied to the plasma processing area at a flow rate in the range of approximately 20 sccm to approximately 300 sccm. 2 ), trifluoromethane (CHF) supplied to the plasma processing area at a flow rate in the range of approximately 50 sccm to approximately 300 sccm. 3 ), and sulfur hexafluoride (SF6) supplied to the plasma processing area at a flow rate in the range of approximately 50 sccm to approximately 300 sccm. 6 A method that includes one or more of the following: Application Example 220: The method according to claim 210, further, A method comprising the step of compressing the outer surface profile of the insert liner in order to enable insertion of the insert liner into the port. Application Example 221: The method according to claim 220, further, A method comprising the step of releasing compression of the outer surface profile of the insert liner so that the insert liner applies the spring force to the inner surface of the port. Application Example 222: A method according to claim 210, wherein the insert liner has a first end separated from a second end by a gap that forms a discontinuity in the outer surface profile of the insert liner, the method comprising the step of compressing the outer surface profile of the insert liner to close the gap in order to allow insertion of the insert liner into the port. Application Example 223: A method according to claim 210, wherein the insert liner is formed of sheet metal. Application Example 224: A method according to claim 210, wherein the insert liner is formed of anodized aluminum sheet metal. Application Example 225: A method according to claim 210, wherein the insert liner is shaped such that it substantially covers the inner surface of the port when the insert liner is placed inside the port. Application Example 226: A method according to claim 210, wherein the insert liner is configured to surround an open space within the port and to provide a view through the open space within the port when the insert liner is positioned within the port. Application Example 227: A method according to claim 210, wherein the insert liner is configured to surround the open space within the port and to cover the outer boundary of the open space within the port that is close to the outer surface of the wall of the plasma processing chamber when the insert liner is positioned within the port. Application Example 228: A method according to claim 210, wherein the insert liner is configured to surround the open space within the port and to cover the inner boundary of the open space within the port that is close to the inner surface of the wall of the plasma processing chamber when the insert liner is positioned within the port. Application Example 229: A method according to claim 228, wherein the insert liner is configured to cover a portion of the inner surface of the wall of the plasma processing chamber around the port when the insert liner is positioned within the port. Application Example 230: A method according to claim 210, wherein the port is a viewport configured to allow observation of the plasma processing area. Application Example 231: A method according to claim 210, wherein the spring force applied by the insert liner to the inner surface of the port is sufficient to physically secure the insert liner within the port. Application Example 232: A method according to claim 210, wherein the insert liner comprises a processing exposure surface that is fluidly exposed to the plasma processing area when the insert liner is positioned within the port, and the processing exposure surface is tuned to facilitate the adhesion of plasma processing by-products to the processing exposure surface. Application Example 233: A method according to claim 232, wherein the surface exposed to treatment has an average surface roughness in the range of about 3.81 micrometers (about 150 microinches) to about 12.7 micrometers (about 500 microinches). Application Example 234: A method for manufacturing an insert liner for a port of a plasma processing chamber, The process includes a step of forming an insert liner to cover the inner surface of a port formed through the wall of a plasma processing chamber, A method wherein the insert liner is configured to have sufficient mechanical flexibility to compress the outer profile of the insert liner in order to allow insertion of the insert liner into the port, and the insert liner is configured to apply a spring force to the inner surface of the port when the compression of the outer profile of the insert liner is released. Application Example 235: A method according to claim 234, wherein the insert liner is formed to have a first end separated from a second end by a gap that forms a discontinuity in the outer surface profile of the insert liner. Application Example 236: A method according to claim 235, wherein the gap is configured to provide the insert liner with mechanical flexibility to the insertion of the insert liner into the port, with respect to compression of the outer profile of the insert liner. Application Example 237: A method according to claim 234, wherein the insert liner is formed of sheet metal. Application Example 238: A method according to claim 234, wherein the insert liner is formed of anodized aluminum sheet metal. Application example 239: A method according to claim 234, wherein the insert liner is shaped to substantially cover the inner surface of the port. Application Example 240: A method according to claim 234, wherein the insert liner is formed to surround an open space within the port and to provide a view through the open space within the port when the insert liner is inserted into the port. Application Example 241: A method according to claim 234, wherein the insert liner is formed to surround the open space within the port and to cover the outer boundary of the open space within the port that is close to the outer surface of the wall of the plasma processing chamber when the insert liner is inserted into the port. Application Example 242: A method according to claim 234, wherein the insert liner is formed to surround the open space within the port and to cover the inner boundary of the open space within the port that is close to the inner surface of the wall of the plasma processing chamber when the insert liner is inserted into the port. Application Example 243: A method according to claim 242, wherein the insert liner is formed to cover a portion of the inner surface of the wall of the plasma processing chamber around the port when the insert liner is inserted into the port. Application Example 244: A method according to claim 234, wherein the port is a viewport configured to allow observation of the internal region of the plasma processing chamber. Application Example 245: A method according to claim 234, wherein the spring force applied by the insert liner to the inner surface of the port is sufficient to physically secure the insert liner within the port. Application Example 246: A method according to claim 234, wherein the insert liner comprises a processing exposure surface that is fluidly exposed to an internal region of the plasma processing chamber when the insert liner is inserted into the port, the method comprising the step of adjusting the processing exposure surface to facilitate the adhesion of plasma processing byproducts to the processing exposure surface. Application Example 247: A method according to claim 246, wherein the surface to be treated is adjusted to have an average surface roughness in the range of about 3.81 micrometers (about 150 microinches) to about 12.7 micrometers (about 500 microinches). Application Example 248: An exhaust baffle assembly for use in a plasma processing chamber, It comprises at least one baffle member configured to fit within the exhaust passage of the plasma processing chamber, The at least one baffle member has a shape that deflects the treated exhaust gas flow when it is placed in the exhaust passage, An exhaust baffle assembly wherein the outer surface of the at least one baffle member is tuned to facilitate the adhesion of plasma treatment by-products present in the treated exhaust gas flow to the at least one baffle member. Application Example 249: Exhaust baffle assembly according to claim 248, wherein the at least one baffle member has a substantially flat surface oriented at an angle to the direction of the main exhaust flow through the exhaust passage when the at least one baffle member is positioned in the exhaust passage. Application Example 250: An exhaust baffle assembly according to claim 249, wherein the angle is about 45 degrees with respect to the direction of the main exhaust flow. Application Example 251: An exhaust baffle assembly according to claim 249, wherein the angle is adjustable. Application Example 252: An exhaust baffle assembly according to claim 248, wherein at least one baffle member is formed of anodized aluminum. Application Example 253: An exhaust baffle assembly according to claim 248, wherein at least one baffle member has an average surface roughness in the range of about 3.81 micrometers (about 150 microinches) to about 12.7 micrometers (about 500 microinches). Application Example 254: An exhaust baffle assembly according to claim 248, further, An exhaust baffle assembly comprising a frame configured to hold the at least one baffle member, the frame comprising a bottom bar, an upper bar, a first end bar, and a second end bar, the first end bar extending between the upper bar and the bottom bar, the second end bar extending between the upper bar and the bottom bar, and the at least one baffle member extending from the first end bar to the second end bar. Application Example 255: An exhaust baffle assembly according to claim 254, wherein the frame is formed of anodized aluminum. Application Example 256: An exhaust baffle assembly according to claim 254, wherein the frame has an average surface roughness in the range of about 3.81 micrometers (about 150 microinches) to about 12.7 micrometers (about 500 microinches). Application Example 257: Exhaust baffle assembly according to claim 254, wherein the at least one baffle member comprises five baffle members, each of the five baffle members extending from the first end bar to the second end bar, each of the five baffle members having a shape that deflects the treated exhaust gas flow when the exhaust baffle assembly is positioned in the exhaust passage, and the outer surfaces of the five baffle members are tuned to promote the adhesion of plasma treatment by-products present in the treated exhaust gas flow to the five baffle members. Application Example 258: An exhaust baffle assembly according to claim 257, wherein each of the five baffle members has a substantially flat surface oriented at about 45 degrees with respect to the direction of the main exhaust flow through the exhaust passage when the exhaust baffle assembly is positioned in the exhaust passage. Application Example 259: Exhaust baffle assembly according to claim 257, wherein each of the five baffle members has a substantially flat surface oriented to cross the direction of the main exhaust flow through the exhaust passage when the exhaust baffle assembly is positioned in the exhaust passage. Application Example 260: An exhaust baffle assembly according to claim 259, wherein the orientation of the substantially flat surface of each of the five baffle members with respect to the direction of the main exhaust flow through the exhaust passage is adjustable. Application Example 261: An exhaust baffle assembly according to claim 257, wherein each of the five baffle members is formed of anodized aluminum. Application Example 262: An exhaust baffle assembly according to claim 157, wherein each of the five baffle members has an average surface roughness in the range of about 3.81 micrometers (about 150 microinches) to about 12.7 micrometers (about 500 microinches). Application Example 263: A plasma processing system, A plasma processing chamber comprising a plasma processing region in which plasma is generated during the operation of the plasma processing chamber, An exhaust passage for the plasma processing chamber, wherein the exhaust passage is in fluid communication with the plasma processing region, and the exhaust passage is configured to direct the flow of processed exhaust gas from the plasma processing region, A pump connected to the exhaust passage, wherein the pump is configured to apply negative pressure inside the exhaust passage, An exhaust baffle assembly disposed within the exhaust passage, wherein the exhaust baffle assembly comprises at least one baffle member shaped to deflect the flow of the processed exhaust gas in the exhaust passage, and the outer surface of the at least one baffle member is adjusted to promote the adhesion of plasma processing by-products present in the flow of the processed exhaust gas to the at least one baffle member, A plasma processing system equipped with the following...

Claims

1. A substrate access port shield for use in a plasma processing chamber, The shield part, A first support portion extends from the first end of the shield portion and is configured to engage with a vertically movable component within the plasma processing chamber, A second support portion extends from the second end of the shield portion and is configured to engage with the vertically movable component in the plasma processing chamber, Equipped with, A substrate access port shield, wherein the shield portion and the first and second support portions form an integral shield structure extending along an arc, the vertical movement of the vertically movable component causes a corresponding vertical movement of the integral shield structure, the shield portion is configured such that the first and second support portions engage with the vertically movable component to at least partially cover the substrate access port opening of the plasma processing chamber when the vertically movable component is in a lower vertical position, and the shield portion is configured such that the first and second support portions engage with the vertically movable component to not cover the substrate access port opening of the plasma processing chamber when the vertically movable component is in an upper vertical position.

2. A substrate access port shield for use in a plasma processing chamber according to claim 1, wherein the shield portion is configured as part of a hollow straight cylinder.

3. A substrate access port shield for use in a plasma processing chamber according to claim 2, wherein the shield portion has a vertical height measured in the axial direction of the hollow straight cylinder, and the vertical height of the shield portion is such that the first and second support portions engage with the vertically movable component, and when the vertically movable component is in the lower vertical position, the shield portion covers at least half of the vertical range of the substrate access port opening of the plasma processing chamber.

4. A substrate access port shield for use in a plasma processing chamber according to claim 2, wherein the shield portion has a vertical height measured in the axial direction of the hollow straight cylinder, and the vertical height of the shield portion is such that the first and second support portions engage with the vertically movable component, and when the vertically movable component is in the lower vertical position, the shield portion covers at least two-thirds of the vertical range of the substrate access port opening of the plasma processing chamber.

5. A substrate access port shield for use in a plasma processing chamber according to claim 2, wherein the shield portion has a vertical height measured in the axial direction of the hollow straight cylinder, and the vertical height of the shield portion is such that the first and second support portions engage with the vertically movable component, so that when the vertically movable component is in the lower vertical position, the shield portion completely covers the vertical range of the substrate access port opening of the plasma processing chamber.

6. A substrate access port shield for use in a plasma processing chamber according to claim 1, wherein the shield portion is configured as a first portion of a hollow straight cylinder, the first support portion is configured as a second portion of the hollow straight cylinder, the second support portion is configured as a third portion of the hollow straight cylinder, the shield portion has a first vertical height measured in the axial direction of the hollow straight cylinder, the first support portion has a second vertical height measured in the axial direction of the hollow straight cylinder, and the second support portion has a third vertical height measured in the axial direction of the hollow straight cylinder.

7. A substrate access port shield for use in a plasma processing chamber according to claim 6, wherein the first vertical height, the second vertical height, and the third vertical height are substantially equal.

8. A substrate access port shield for use in a plasma processing chamber according to claim 6, wherein the first vertical height is different from the second vertical height and the third vertical height.

9. A substrate access port shield for use in a plasma processing chamber according to claim 8, wherein the second vertical height and the third vertical height are substantially equal.

10. A substrate access port shield for use in a plasma processing chamber according to claim 6, wherein the first vertical height is smaller than the second vertical height and the third vertical height, respectively.

11. A substrate access port shield for use in a plasma processing chamber according to claim 1, wherein the integral shield structure is made of a ceramic material.

12. A substrate access port shield for use in a plasma processing chamber according to claim 11, wherein the ceramic material is aluminum oxide.

13. A substrate access port shield for use in a plasma processing chamber according to claim 11, wherein at least the inner surface of the integral shield structure has an average surface roughness in the range of 3.81 micrometers (150 microinches) to 12.7 micrometers (500 microinches).

14. A substrate access port shield for use in a plasma processing chamber according to claim 13, wherein the ceramic material forming the integral shield structure is exposed on the inner surface of the integral shield structure.

15. A substrate access port shield for use in a plasma processing chamber according to claim 1, wherein the vertically movable component is a focus ring structure.

16. A substrate access port shield for use in a plasma processing chamber according to claim 15, wherein the focus ring structure is configured to surround a substrate support structure in the plasma processing chamber, the focus ring structure comprises a ring portion formed as a hollow straight cylinder, and three radial extension structures configured to extend radially outward from the outer surface of the ring portion, the three radial extension structures are spaced apart along the outer circumference of the ring portion, the first support portion is configured to engage with the first structure of the three radial extension structures, and the second support portion is configured to engage with the second structure of the three radial extension structures.

17. A substrate access port shield for use in a plasma processing chamber according to claim 16, wherein the three radial extension structures are configured to engage with each of the three lift components to enable raising and lowering the combination of the focus ring structure and the integrated shield structure relative to the substrate support structure.

18. A substrate access port shield for use in a plasma processing chamber according to claim 16, wherein the first support portion is configured to engage with the third structure among the three radial extension structures.

19. A plasma processing chamber, A substrate support structure configured to hold the substrate by exposing it to the plasma during the operation of the plasma processing chamber, A focus ring structure configured to surround the substrate support structure within the plasma processing chamber, the focus ring structure comprising a ring portion formed as a hollow straight cylinder and three radial extension structures configured to extend radially outward from the outer surface of the ring portion, the three radial extension structures spaced apart along the outer circumference of the ring portion, An integral shield structure comprising a shield portion, a first support portion, and a second support portion, wherein the first support portion extends from a first end of the shield portion and is configured to engage with the first of the three radial extension structures of the focus ring structure, the second support portion extends from a second end of the shield portion and is configured to engage with the second of the three radial extension structures of the focus ring structure, the integral shield structure is formed to extend along an arc, the shield portion is configured to at least partially cover the substrate access port opening of the plasma processing chamber when the focus ring structure is in a lower vertical position, and the shield portion is configured not to cover the substrate access port opening of the plasma processing chamber when the focus ring structure is in an upper vertical position, and A plasma processing chamber equipped with the following features.

20. A plasma processing chamber according to claim 19, wherein the integral shield structure is removable from the focus ring structure.

21. A plasma processing chamber according to claim 19, wherein the integral shield structure is fixed to the focus ring structure by gravity.

22. A plasma processing chamber according to claim 19, wherein the integral shield structure is connected to the focus ring structure without fasteners.

23. Plasma processing chamber according to claim 19, wherein the first support portion comprises a slot configured to receive the first of the three radial extension structures of the focus ring structure, and the second support portion comprises a slot configured to receive the second of the three radial extension structures of the focus ring structure.

24. A plasma processing chamber according to claim 19, wherein either the first support portion or the second support portion is configured to engage with the third structure among the three radial extension structures of the focus ring structure.

25. A plasma processing chamber according to claim 24, wherein the first support portion comprises a slot configured to receive the first of the three radial extension structures of the focus ring structure, the second support portion comprises a slot configured to receive the second of the three radial extension structures of the focus ring structure, and either the first support portion or the second support portion comprises a slot configured to receive the third of the three radial extension structures of the focus ring structure.

26. A plasma processing chamber according to claim 19, further, The focus ring structure comprises three lift components configured to engage with the three radial extension structures, respectively. A plasma processing chamber in which the three lift components are configured to provide controlled vertical movement of the combination of the focus ring structure and the integrated shield structure relative to the substrate support structure.

27. A plasma processing chamber according to claim 19, wherein the shield portion of the integral shield structure is configured as part of a hollow straight cylinder, and the shield portion has a vertical height measured in the axial direction of the hollow straight cylinder.

28. A plasma processing chamber according to claim 27, wherein the vertical height of the shield portion allows the shield portion to cover at least half of the vertical range of the substrate access port opening of the plasma processing chamber when the focus ring structure is in the lower vertical position.

29. Plasma processing chamber according to claim 27, wherein the vertical height of the shield portion allows the shield portion to cover at least two-thirds of the vertical range of the substrate access port opening of the plasma processing chamber when the focus ring structure is in the lower vertical position.

30. A plasma processing chamber according to claim 27, wherein the vertical height of the shield portion allows the shield portion to completely cover the vertical range of the substrate access port opening of the plasma processing chamber when the focus ring structure is in the lower vertical position.

31. A plasma processing chamber according to claim 19, wherein the integral shield structure is made of a ceramic material.

32. A plasma processing chamber according to claim 31, wherein the ceramic material is aluminum oxide.

33. A plasma processing chamber according to claim 31, wherein at least the inner surface of the integral shield structure has an average surface roughness in the range of 3.81 micrometers (150 microinches) to 12.7 micrometers (500 microinches).

34. A plasma processing chamber according to claim 33, wherein the ceramic material forming the integral shield structure is exposed on the inner surface of the integral shield structure.

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