Plasma processing apparatus and plasma processing method

Abstract

To appropriately supply power to a plurality of coils with a desired distribution ratio.SOLUTION: Disclosed is a plasma processing apparatus 10 including: a chamber 11; a high-frequency power source 19; a matcher 21; a distributor 22 including first and second variable capacitors 23a, 24a and configured to distribute and output high-frequency power supplied from the high-frequency power source 19; first and second coils 17, 18 connected in parallel with each other, on an output side of the distributor 22; a control unit 35 configured to change a distribution ratio of the high-frequency power distributed between the first and second coils 17, 18 by adjusting the capacitance value of at least one of the first and second variable capacitors 23a, 24a based on distribution ratio information showing the relationship between the capacitance value of the first and second variable capacitors 23a, 24a and the distribution ratio; and an update unit 41 configured to update the distribution ratio information based on the high-frequency power that is output to the first and second coils 17, 18.SELECTED DRAWING: Figure 3

Description

Technical Field

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[0001] The present disclosure relates to a plasma processing apparatus and a plasma processing method.

Background Art

[0002] Conventionally, a plasma processing apparatus for plasma-processing a workpiece has been known (for example, Patent Document 1). The plasma processing apparatus of Patent Document 1 includes a chamber, a plurality of coils that generate plasma in the chamber by applying high-frequency power, a power dividing unit that divides the high-frequency power and supplies it to each coil, and a control device that controls the power ratio divided by the power dividing unit. The control device has a memory and controls the power ratio divided by the power dividing unit according to a recipe stored in advance in the memory.

Prior Art Documents

Patent Documents

[0003] [[ID=​​​​​​​​​​​​​​​​​​​​One aspect of the present disclosure relates to a plasma processing apparatus. The plasma processing apparatus includes a chamber, a high-frequency power supply for supplying high-frequency power to generate plasma in the chamber, a matching unit connected to the high-frequency power supply, a distributor connected to the matching unit and having a first variable capacitor and a second variable capacitor, which distributes and outputs the high-frequency power supplied from the high-frequency power supply, a first coil and a second coil connected in parallel to each other on the output side of the distributor, a control unit which controls the distribution ratio by adjusting the capacitance value of at least one of the first variable capacitor and the second variable capacitor based on the relationship between the capacitance values ​​of the first variable capacitor and the second variable capacitor and the distribution ratio of the high-frequency power to the first coil and the second coil, and an update unit which updates the distribution ratio information based on the high-frequency power output to the first coil and the second coil.

[0006] Another aspect of the present disclosure relates to a plasma processing method. The plasma processing method uses a plasma processing apparatus comprising: a chamber; a high-frequency power supply for supplying high-frequency power to generate plasma in the chamber; a matching unit connected to the high-frequency power supply; a distributor connected to the matching unit and having a first variable capacitor and a second variable capacitor, which distributes and outputs the high-frequency power supplied from the high-frequency power supply; and a first coil and a second coil connected in parallel to each other on the output side of the distributor. The plasma processing method comprises: a first step of controlling the distribution ratio by adjusting the capacitance value of at least one of the first variable capacitor and the second variable capacitor based on distribution ratio information indicating a relationship between the capacitance values ​​of the first variable capacitor and the second variable capacitor and the distribution ratio of the high-frequency power to the first coil and the second coil; and a second step of updating the distribution ratio information based on the high-frequency power output to the first coil and the second coil. [Effects of the Invention]

[0007] According to this disclosure, power can be supplied to multiple coils appropriately at a desired distribution ratio. [Brief explanation of the drawing]

[0008] [Figure 1] This is a schematic cross-sectional view showing an example of a plasma processing apparatus related to this disclosure. [Figure 2] This is a schematic circuit diagram showing the configuration from the high-frequency power supply to the first and second coils. [Figure 3] This is a flowchart of an example of the plasma processing method related to this disclosure. [Modes for carrying out the invention]

[0009] Embodiments of the plasma processing apparatus and plasma processing method relating to this disclosure will be described below with examples. However, this disclosure is not limited to the examples described below. In the following description, specific numerical values ​​and materials may be given as examples, but other numerical values ​​and materials may be applied as long as the effects of this disclosure are obtained.

[0010] (Plasma treatment device) The plasma processing apparatus according to this disclosure is an apparatus for plasma processing of an object to be processed. The plasma processing apparatus may be, for example, a plasma etching apparatus, a plasma dicer, a plasma ashing apparatus, or a plasma CVD apparatus. The plasma processing apparatus comprises a chamber, a high-frequency power supply, a matching unit, a distributor, a first coil and a second coil, a control unit, and a refresh unit.

[0011] The chamber may be formed in a hollow cylindrical shape. The chamber may have an opening at the top. The opening may be open upwards. A dielectric member may be provided in the opening. The chamber may be grounded.

[0012] The high-frequency power supply provides high-frequency power to generate plasma in the chamber. The frequency of the high-frequency power may be, for example, 3 MHz or higher and 30 MHz or lower.

[0013] The matching circuit is connected to the high-frequency power supply. The matching circuit is configured to match the impedance of the high-frequency power supply (input impedance) with the impedance of the device downstream of the matching circuit (load impedance). The matching circuit may have at least one variable capacitor, and impedance matching may be performed by changing the capacitance value of the variable capacitor. The matching circuit may also be an automatic matching circuit capable of performing impedance matching automatically.

[0014] The distributor is connected to a matching circuit and has a first variable capacitor and a second variable capacitor. The distributor distributes and outputs high-frequency power supplied from a high-frequency power supply. The distributor may have an input section connected to a matching circuit and a first output section and a second output section. The distributor may distribute the high-frequency power input to the input section from the first output section and the second output section and output it. The distributor may be configured to change the distribution ratio of high-frequency power by changing the capacitance values ​​of the first variable capacitor and the second variable capacitor.

[0015] The first and second coils are connected in parallel to each other on the output side of the distributor. The first coil may be connected to the first output section of the distributor. The second coil may be connected to the second output section of the distributor. The first and second coils may be positioned above the chamber. By applying high-frequency power to the first and second coils, plasma for processing the material to be processed can be generated inside the chamber. The first and second coils may each be configured in a vortex or spiral shape. The vortex or spiral first and second coils may be arranged coaxially with each other.

[0016] The control unit controls the distribution ratio of high-frequency power to the first coil and the second coil. The control unit controls the distribution ratio by adjusting the capacitance value of at least one of the first and second variable capacitors based on distribution ratio information that shows the relationship between the capacitance values ​​of the first and second variable capacitors and the distribution ratio. The distribution ratio information may be stored in a memory unit of the plasma processing apparatus, or in a memory unit of a separate device (e.g., a server device). The distribution ratio information may be in table format information showing the relationship between the capacitance values ​​of the first and second variable capacitors and the distribution ratio. The control unit may have an arithmetic unit and a memory device that stores a program executable by the arithmetic unit. The control unit may be configured as either an integrated or remote control device.

[0017] The update unit updates the distribution ratio information based on the high-frequency power output to the first coil and the second coil. For example, the update unit may update the distribution ratio information based on the ratio of the high-frequency power output to the first coil to the high-frequency power output to the second coil (i.e., the actual distribution ratio obtained by control based on the distribution ratio information). With such an update unit, even if reaction products from plasma processing accumulate in the chamber or parts of the apparatus wear out, the distribution ratio information can be updated according to the state of the apparatus to achieve a desired distribution ratio. Therefore, high-frequency power can be supplied to the first and second coils appropriately at the desired distribution ratio. The update unit may be integrated with the control unit or it may be a separate unit.

[0018] The plasma processing apparatus may further include a first sensor for measuring the high-frequency power output to the first coil, a second sensor for measuring the high-frequency power output to the second coil, and a calculation unit for calculating an actual distribution ratio based on the measurement values of the first sensor and the second sensor. The update unit may update the distribution ratio information based on the actual distribution ratio and the capacitance values of the first variable capacitor and the second variable capacitor (hereinafter also referred to as the capacitance values at the time of measurement) when the measurement values corresponding to the actual distribution ratio are measured. The first sensor may be provided between the distributor and the first coil. The second sensor may be provided between the distributor and the second coil. The calculation unit may be integrated with the control unit or may be separate. Here, the distribution ratio information includes information on the distribution ratio (i.e., the assumed distribution ratio) corresponding to the capacitance value at the time of measurement. The update unit may update the distribution ratio information so that the difference between the assumed distribution ratio and the actual distribution ratio becomes small. For example, the update unit may update the distribution ratio information by rewriting the information on the assumed distribution ratio included in the distribution ratio information with the information on the actual distribution ratio.

[0019] When the difference between the actual distribution ratio corresponding to an arbitrary capacitance value of the first variable capacitor and the second variable capacitor and the distribution ratio (the above-mentioned assumed distribution ratio) in the distribution ratio information before update corresponding to the arbitrary capacitance value exceeds a first threshold value, the update unit may update the distribution ratio information. For example, in such a case, the update unit may update the distribution ratio information by rewriting the information on the distribution ratio in the distribution ratio information before update with the information on the actual distribution ratio corresponding to the arbitrary capacitance value. The first threshold value may be set as a relative value as a ratio to the actual distribution ratio or the assumed distribution ratio, or may be set as a predetermined absolute value.

[0020] The plasma processing apparatus may further include a storage unit for storing the distribution ratio information. Alternatively, such a storage unit may be provided in a device separate from the plasma processing apparatus (for example, a server device).

[0021] The updating unit may update the distribution ratio information in real time during the plasma treatment of the object to be processed. Alternatively, the updating unit may collectively update the distribution ratio information for a plurality of settings of the capacitance values of the first and second variable capacitors. The latter collective update is particularly effective, for example, when newly introducing the plasma processing apparatus or when replacing consumable parts of the plasma processing apparatus.

[0022] (Plasma Processing Method) The plasma processing method according to the present disclosure is, for example, a plasma processing method using the above-described plasma processing apparatus, and includes a first step and a second step.

[0023] In the first step, the distribution ratio of the high-frequency power to the first coil and the second coil is controlled. In the first step, at least one of the capacitance values of the first variable capacitor and the second variable capacitor is adjusted based on the distribution ratio information indicating the relationship between the capacitance values of the first variable capacitor and the second variable capacitor and the distribution ratio, thereby controlling the distribution ratio.

[0024] In the second step, the distribution ratio information is updated based on the high-frequency power output to the first coil and the second coil. For example, in the second step, the distribution ratio information may be updated based on the ratio of the high-frequency power output to the first coil to the high-frequency power output to the second coil (that is, the actual distribution ratio obtained by the control based on the distribution ratio information). According to such a second step, as described above, the high-frequency power can be appropriately supplied to the first and second coils at a desired distribution ratio.

[0025] The plasma processing method may further include a third step of measuring the high-frequency power output to the first coil and the second coil, respectively, and a fourth step of calculating the actual distribution ratio based on the measurement values ​​in the third step. In the second step, the distribution ratio information may be updated based on the actual distribution ratio and the capacitance values ​​of the first and second variable capacitors (capacitance values ​​at the time of measurement) when the measurement values ​​corresponding to the actual distribution ratio were measured. Here, the distribution ratio information includes the assumed distribution ratio information described above. In the second step, the distribution ratio information may be updated so that the difference between the assumed distribution ratio and the actual distribution ratio becomes small. For example, in the second step, the distribution ratio information may be updated by overwriting the assumed distribution ratio information included in the distribution ratio information with the actual distribution ratio information.

[0026] In the second step, the distribution ratio information may be updated if the difference between the actual distribution ratio corresponding to any capacitance value of the first and second variable capacitors and the distribution ratio in the distribution ratio information before the update corresponding to the arbitrary capacitance value (assumed distribution ratio) exceeds the first threshold. For example, in the second step, in such a case, the distribution ratio information may be updated by overwriting the distribution ratio information in the distribution ratio information before the update with the information of the actual distribution ratio corresponding to the arbitrary capacitance value.

[0027] In the second step, the distribution ratio information may be updated in real time during the plasma treatment of the workpiece. Alternatively, in the second step, the distribution ratio information may be updated collectively for multiple settings of the capacitance values ​​of the first and second variable capacitors.

[0028] As described above, according to this disclosure, by appropriately updating the distribution ratio information, high-frequency power can be supplied to the first and second coils at a desired distribution ratio.

[0029] Hereinafter, an example of a plasma processing apparatus and plasma processing method according to this disclosure will be specifically described with reference to the drawings. The components and processes described above can be applied to the components and processes of the example plasma processing apparatus and plasma processing method described below. The components and processes of the example plasma processing apparatus and plasma processing method described below can be modified based on the above description. Furthermore, the matters described below may be applied to the above embodiments. Among the components and processes of the example plasma processing apparatus and plasma processing method described below, components and processes that are not essential to the plasma processing apparatus and plasma processing method according to this disclosure may be omitted. Note that the figures shown below are schematic and do not accurately reflect the actual shape and number of components.

[0030] The plasma processing apparatus 10 of this embodiment is a device for plasma processing of a workpiece (for example, a semiconductor substrate). The plasma processing apparatus 10 of this embodiment is a plasma dicer, but is not limited to this. As shown in Figures 1 and 2, the plasma processing apparatus 10 comprises a chamber 11, a stage 12, a dielectric member 13, a cover 14, a gas introduction path 15, a first coil 17 and a second coil 18, a metal cover 25, a first support column 27, a second support column 29, a first heater 31 and a second heater 32, a first pressing unit 33 and a second pressing unit 34, a high-frequency power supply 19, a matching unit 21, a distributor 22, a control unit 35, a storage unit 36, a first sensor 37, a second sensor 38, a calculation unit 39, and an update unit 41.

[0031] Chamber 11 has an opening 11a at its top. Chamber 11 is formed in a hollow cylindrical shape, but is not limited to this. The opening 11a is open upwards. Chamber 11 is located on the outer periphery of stage 12 and has an exhaust port 11b for exhausting the raw material gas used in plasma processing. An exhaust device (not shown) is connected to this exhaust port 11b. Chamber 11 is made of a conductive material (e.g., metal). Chamber 11 is grounded.

[0032] Stage 12 is positioned within Chamber 11 and on which the workpiece is placed. Stage 12 has a horizontal mounting surface 12a on which the workpiece is placed. Stage 12 has a flow channel (not shown) through which a coolant flows to cool the workpiece during plasma processing. Stage 12 has an electrostatic adsorption mechanism (not shown) for adsorbing the workpiece. Stage 12 has a lower electrode (not shown) to which high-frequency power is applied.

[0033] The dielectric member 13 closes the opening 11a of the chamber 11. The dielectric member 13 is formed in a plate shape having a horizontally extending region. The dielectric member 13 is made of, for example, quartz, but is not limited to this.

[0034] The cover 14 is installed within the chamber 11 to cover the dielectric member 13. The cover 14 covers the lower surface of the dielectric member 13. The cover 14 has a plurality of first gas holes 14a formed in positions overlapping with the central region of the dielectric member 13, and a plurality of second gas holes 14b formed in positions overlapping with the peripheral region of the dielectric member 13. The first gas holes 14a and the second gas holes 14b each penetrate the cover 14 in the thickness direction (vertical direction in Figure 1). The first gas holes 14a and the second gas holes 14b each communicate with the space in the chamber 11 where the stage 12 is located. The plurality of first gas holes 14a are spaced apart in the radial and circumferential directions. The plurality of second gas holes 14b are spaced apart in the radial and circumferential directions. The cover 14 is made of, for example, aluminum nitride, but is not limited to this.

[0035] The gas introduction passage 15 is formed between the dielectric member 13 and the cover 14, and the raw material gas is introduced through it. The gas introduction passage 15 has a first gas introduction passage 15a that communicates with a first gas hole 14a, and a second gas introduction passage 15b that communicates with a second gas hole 14b. The first gas introduction passage 15a and the second gas introduction passage 15b are each formed by grooves formed in the cover 14. The first gas introduction passage 15a and the second gas introduction passage 15b are separated from each other. The first gas introduction passage 15a and the second gas introduction passage 15b each communicate with the outside of the chamber 11. A gas source (not shown) is connected to the first gas introduction passage 15a and the second gas introduction passage 15b, respectively.

[0036] The first coil 17 and the second coil 18 are connected in parallel to each other on the output side of the distributor 22. The first coil 17 includes multiple (two in this example) first conductors 17a connected in parallel to each other. The second coil 18 is arranged to surround the first coil 17. The second coil 18 includes multiple (four in this example) second conductors 18a connected in parallel to each other.

[0037] One end (first end 17b) of the first conductor 17a constituting the first coil 17 is connected to the high-frequency power supply 19 via a distributor 22 and a matching unit 21, respectively. The other end (second end 17c) of the first conductor 17a constituting the first coil 17 is grounded via a conductive chamber 11, respectively. One end (third end 18b) of the second conductor 18a constituting the second coil 18 is connected to the high-frequency power supply 19 via a distributor 22 and a matching unit 21, respectively. The other end (fourth end 18c) of the second conductor 18a constituting the second coil 18 is grounded via a conductive chamber 11, respectively.

[0038] The metal cover 25 covers the first coil 17 and the second coil 18. The metal cover 25 is located above the chamber 11 and is electrically connected to the chamber 11. The metal cover 25 is formed in a cylindrical shape with a closed upper end, but is not limited to this. The metal cover 25 may be made of, for example, aluminum.

[0039] The first support column 27 is installed above the central region of the dielectric member 13. The first support column 27 is made of an insulator. The first support column 27 is supported by a metal cover 25. The first support column 27 supports the first coil 17. The first support column 27 supports a conductive member 26 connected to the second end 17c of the first coil 17 via a fixing member 28. The conductive member 26 is electrically connected to the metal cover 25 above the first coil 17. The conductive member 26 does not extend into the region above the second coil 18.

[0040] The second support column 29 is installed above the peripheral region of the dielectric member 13. The second support column 29 is made of an insulator. The second support column 29 is supported by a metal cover 25. The second support column 29 supports the second coil 18.

[0041] The first heater 31 and the second heater 32 are provided on the upper surface of the dielectric member 13 and heat the dielectric member 13 during plasma processing. The first heater 31 is positioned in a region closer to the center than the second heater 32.

[0042] The first pressing portion 33 and the second pressing portion 34 press the first heater 31 and the second heater 32 against the dielectric member 13. The first pressing portion 33 is provided between the first support column 27 and the first heater 31. The first pressing portion 33 has a first spring 33a for pressing the first heater 31 against the dielectric member 13. The second pressing portion 34 is provided between the metal cover 25 and the second heater 32. The second pressing portion 34 has a second spring 34a for pressing the second heater 32 against the dielectric member 13.

[0043] The high-frequency power supply 19 supplies high-frequency power (e.g., AC power of 3 to 30 MHz) to generate plasma in the chamber 11. The high-frequency power supply 19 is connected to the first end 17b of the first coil 17 and the third end 18b of the second coil 18 via a matching unit 21 and a distributor 22.

[0044] The matching circuit 21 is connected to the high-frequency power supply 19. The matching circuit 21 has a third variable capacitor 21a connected in series with the high-frequency power supply 19 and a fourth variable capacitor 21b connected in parallel with the high-frequency power supply 19. The matching circuit 21 is configured to match the impedance of the high-frequency power supply 19 (input impedance) with the impedance of the stage after the matching circuit 21 (load impedance) by adjusting the capacitance values ​​of the third variable capacitor 21a and the fourth variable capacitor 21b.

[0045] The distributor 22 is connected to the matching unit 21. The distributor 22 has a first distribution circuit 23 that distributes a portion of the high-frequency power output by the high-frequency power supply 19 to the first coil 17, and a second distribution circuit 24 that distributes a portion of the said high-frequency power to the second coil 18. The first distribution circuit 23 has a first variable capacitor 23a and an inductor 23b connected in parallel with each other, and a capacitor 23c connected in series downstream of both. The second distribution circuit 24 consists only of a second variable capacitor 24a. The first distribution circuit 23 and the second distribution circuit 24 are connected in parallel with each other.

[0046] The control unit 35 controls the distribution ratio of high-frequency power to the first coil 17 and the second coil 18. The control unit 35 controls the distribution ratio through the control of the distributor 22, specifically by adjusting the capacitance values ​​of the first variable capacitor 23a and the second variable capacitor 24a provided in the distributor 22. The control unit 35 controls the distribution ratio by adjusting the capacitance value of at least one of the first variable capacitor 23a and the second variable capacitor 24a based on distribution ratio information that shows the relationship between the capacitance values ​​of the first variable capacitor 23a and the second variable capacitor 24a and the distribution ratio of high-frequency power to the first coil 17 and the second coil 18.

[0047] In the circuit configuration shown in Figure 2, the control unit 35 may increase the ratio of power supplied to the second coil 18 (and decrease the ratio of power supplied to the first coil 17) by decreasing the capacitance value of the first variable capacitor 23a, decreasing the capacitance value of the second variable capacitor 24a, or both. Alternatively, the control unit 35 may decrease the ratio of power supplied to the second coil 18 (and increase the ratio of power supplied to the first coil 17) by increasing the capacitance value of the first variable capacitor 23a, increasing the capacitance value of the second variable capacitor 24a, or both.

[0048] The storage unit 36 ​​stores distribution ratio information. The storage unit 36 ​​may be composed of, for example, non-volatile memory. The storage unit 36 ​​can communicate with the control unit 35 and the update unit 41 by wired or wireless means.

[0049] The first sensor 37 measures the high-frequency power output to the first coil 17. The first sensor 37 is installed between the distributor 22 and the first coil 17. The type of the first sensor 37 is not particularly limited and can be arbitrarily selected as long as it is capable of measuring high-frequency power. For example, the first sensor 37 may be configured to measure the current and voltage supplied to the first coil 17.

[0050] The second sensor 38 measures the high-frequency power output to the second coil 18. The second sensor 38 is installed between the distributor 22 and the second coil 18. The type of the second sensor 38 is not particularly limited and can be arbitrarily selected as long as it is capable of measuring high-frequency power. For example, the second sensor 38 may be configured to measure the current and voltage supplied to the second coil 18.

[0051] The calculation unit 39 calculates the actual distribution ratio (i.e., the ratio of the measured high-frequency power of the first coil 17 to the measured high-frequency power of the second coil 18) based on the measurements of the first sensor 37 and the second sensor 38. The calculation unit 39 sends the calculated actual distribution ratio information to the update unit 41.

[0052] The update unit 41 updates the distribution ratio information stored in the storage unit 36 ​​based on the high-frequency power output to the first coil 17 and the second coil 18. Specifically, the update unit 41 updates the distribution ratio information based on the actual distribution ratio calculated by the calculation unit 39 and the capacitance values ​​of the first variable capacitor 23a and the second variable capacitor 24a when the measured value corresponding to the actual distribution ratio was measured. For example, the update unit 41 updates the distribution ratio information when the difference between the actual distribution ratio corresponding to an arbitrary capacitance value of the first variable capacitor 23a and the second variable capacitor 24a and the distribution ratio in the distribution ratio information before the update corresponding to that arbitrary capacitance value exceeds a first threshold. In this case, the update unit 41 may update the distribution ratio information by rewriting the distribution ratio information in the distribution ratio information before the update with the actual distribution ratio information corresponding to that arbitrary capacitance value.

[0053] (Plasma treatment method) Next, a plasma processing method using the plasma processing apparatus 10 described above will be explained with reference to Figure 3. As shown in the figure, the plasma processing method comprises a power application step ST1, a matching step ST2, a control step ST3, a measurement step ST4, a calculation step ST5, a determination step ST6, and an update step ST7.

[0054] In the power application process ST1, the high-frequency power supply 19 is made to output high-frequency power (for example, AC power of 3 to 30 MHz). Subsequently, the process proceeds to the matching process ST2.

[0055] In matching process ST2, the input impedance and load impedance are matched by the matching unit 21. The process then proceeds to control process ST3.

[0056] In the control step ST3, the distribution ratio is controlled by adjusting the capacitance value of at least one of the first variable capacitor 23a and the second variable capacitor 24a based on the current distribution ratio information. The control step ST3 is an example of the first step. The process then proceeds to the measurement step ST4.

[0057] In measurement step ST4, the high-frequency power output to the first coil 17 and the second coil 18 is measured. Measurement step ST4 is an example of the third step. The process then proceeds to calculation step ST5.

[0058] In calculation step ST5, the actual distribution ratio is calculated based on the measurements taken in measurement step ST4. Calculation step ST5 is an example of the fourth step. The process then proceeds to determination step ST6.

[0059] In the determination step ST6, it is determined whether the difference between the actual distribution ratio calculated in the calculation step ST5 and the distribution ratio in the current distribution ratio information corresponding to the current capacitance values ​​of the first variable capacitor 23a and the second variable capacitor 24a (i.e., the capacitance values ​​after adjustment in the control step ST3) exceeds the first threshold. If the difference exceeds the first threshold (Yes), the process proceeds to the update step ST7. If the difference does not exceed the first threshold (No), the series of processes ends.

[0060] In update step ST7, the distribution ratio information is updated based on the high-frequency power output to the first coil 17 and the second coil 18. In update step ST7, the distribution ratio information may also be updated by overwriting the distribution ratio information in the current distribution ratio information with the actual distribution ratio information corresponding to the current capacitance value. Update step ST7 is an example of the second step.

[0061] While preferred embodiments of this disclosure have been described, this description should not limit the scope of this disclosure. For example, any combination of two or more claims arbitrarily selected from the claims set forth in the appended claims is possible, provided that no technical inconsistency arises. [Industrial applicability]

[0062] This disclosure can be used in plasma processing apparatus and plasma processing methods. [Explanation of symbols]

[0063] 10: Plasma processing equipment 11: Chamber 11a:Aperture 11b: Exhaust vent 12: Stage 12a: Mounting surface 13: Dielectric material 14: Cover 14a: First gas hole 14b: Second gas hole 15: Gas introduction route 15a: First gas introduction channel 15b: Second gas introduction channel 17: Coil 1 17a: First conductor 17b: 1st end 17c: 2nd end 18: Second coil 18a: Second conductor 18b: 3rd end 18c: 4th end 19:High frequency power supply 21: Matching box 21a: Third variable capacitor 21b: 4th variable capacitor 22:Distributor 23: 1st distribution circuit 23a: First variable capacitor 23b: Inductor 23c: Capacitor 24:Second distribution circuit 24a: Second variable capacitor 25: Metal cover 26: Conductive material 27:1st pillar 28: Fixing member 29:Second pillar 31: First heater 32: Second heater 33: First pressing section 33a: First spring 34: Second pressing section 34a: Second spring 35: Control Unit 36: Storage part 37: First Sensor 38: Second sensor 39: Calculation Department 41: Update section

Claims

1. Chamber and, A high-frequency power supply that supplies high-frequency power for generating plasma in the chamber, A matching circuit connected to the aforementioned high-frequency power supply, A distributor connected to the matching circuit and having a first variable capacitor and a second variable capacitor, which distributes and outputs the high-frequency power supplied from the high-frequency power supply, The output side of the distributor is provided with a first coil and a second coil connected in parallel to each other, A control unit controls the distribution ratio by adjusting the capacitance value of at least one of the first variable capacitor and the second variable capacitor based on distribution ratio information showing the relationship between the capacitance values ​​of the first variable capacitor and the second variable capacitor and the distribution ratio of the high-frequency power to the first coil and the second coil, An update unit updates the distribution ratio information based on the high-frequency power output to the first coil and the second coil, A plasma processing apparatus equipped with the following features.

2. A first sensor for measuring the high-frequency power output to the first coil, A second sensor for measuring the high-frequency power output to the second coil, A calculation unit that calculates the actual distribution ratio based on the measurements of the first sensor and the second sensor, Furthermore, The plasma processing apparatus according to claim 1, wherein the update unit updates the distribution ratio information based on the actual distribution ratio and the capacitance values ​​of the first variable capacitor and the second variable capacitor when the measured value corresponding to the actual distribution ratio is measured.

3. The plasma processing apparatus according to claim 2, wherein the update unit updates the distribution ratio information when the difference between the actual distribution ratio corresponding to any capacitance value of the first variable capacitor and the second variable capacitor and the distribution ratio in the distribution ratio information before the update corresponding to the arbitrary capacitance value exceeds a first threshold.

4. The plasma processing apparatus according to any one of claims 1 to 3, further comprising a storage unit for storing the distribution ratio information.

5. Chamber and, A high-frequency power supply that supplies high-frequency power for generating plasma in the chamber, A matching circuit connected to the aforementioned high-frequency power supply, A distributor connected to the matching circuit and having a first variable capacitor and a second variable capacitor, which distributes and outputs the high-frequency power supplied from the high-frequency power supply, The output side of the distributor is provided with a first coil and a second coil connected in parallel to each other, A plasma processing method using a plasma processing apparatus comprising: A first step of controlling the distribution ratio by adjusting the capacitance value of at least one of the first variable capacitor and the second variable capacitor based on distribution ratio information showing the relationship between the capacitance values ​​of the first variable capacitor and the second variable capacitor and the distribution ratio of the high-frequency power to the first coil and the second coil, A second step of updating the distribution ratio information based on the high-frequency power output to the first coil and the second coil, A plasma treatment method comprising the following features.

6. A third step involves measuring the high-frequency power output to the first coil and the second coil, respectively. A fourth step involves calculating the actual distribution ratio based on the measurements taken in the third step, Furthermore, The plasma processing method according to claim 5, wherein in the second step, the distribution ratio information is updated based on the actual distribution ratio and the capacitance values ​​of the first variable capacitor and the second variable capacitor when the measured value corresponding to the actual distribution ratio is measured.

7. The plasma processing method according to claim 6, wherein in the second step, the distribution ratio information is updated when the difference between the actual distribution ratio corresponding to any capacitance value of the first variable capacitor and the second variable capacitor and the distribution ratio in the distribution ratio information before updating corresponding to the arbitrary capacitance value exceeds a first threshold.

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