Substrate holding plate, device manufacturing method, and exposure apparatus

Abstract

To provide a substrate holding panel capable of holding a substrate in a state where flatness of the substrate is high.SOLUTION: A substrate holding panel has a pin part for supporting a substrate and a wall part arranged around the pin part, wherein the wall part is formed lower than the pin part, a density of the wall part occupied in a first region including the pin part and the wall part is smaller than a density of the wall part occupied in a second region which includes the pin part and the wall part and has a shape congruent to the first region, and a difference of elevation between the wall part and the pin part in the first region is larger than a difference of elevation between the wall part and the pin part in the second region.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] The present invention relates to a substrate holding plate.

Background Art

[0002] In an exposure apparatus, an exposure process is performed on a substrate made of glass, silicon, SiC, etc. When performing the exposure process on the substrate, it is preferable that no focus shift occurs during exposure, and the focus shift during exposure often depends on the flatness of the substrate holding plate. Therefore, a technique for planar correction of the substrate is known in accordance with the tip of the peripheral wall portion surrounding the outer periphery of the pins and the chuck.

[0003] [[ID=X16]]For example, in Patent Document 1, an object holding device provided with a peripheral wall portion surrounding the outer periphery of a chuck and pins that contact the substrate has been proposed in a form in which the height of the pins is designed to be the same as the height of the peripheral wall portion.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] In the case where the pins and the peripheral wall portion have the same height, the substrate may warp upward at the peripheral wall portion of the chuck when the substrate is adsorbed.

[0006] In addition, the inventor has found that in a portion where the peripheral wall portions are dense, the upward warping of the substrate may be greater than in a portion where the peripheral wall portions are sparse.

[0007] <X Therefore, an object of the present invention is to provide a substrate holding plate capable of adsorbing and holding a substrate in a state of high flatness even for a substrate holding plate in which the density of the wall portions is not uniform.

Means for Solving the Problems

先行技術文献

Prior Art Documents

特許文献

Patent Documents

[0008] A means for solving the above problems is a substrate holder having pin portions for supporting a substrate and wall portions arranged around the pin portions, wherein the wall portions are formed lower than the pin portions, the density of the wall portions in a first region including the pin portions and the wall portions is less than the density of the wall portions in a second region including the pin portions and the wall portions and having a shape congruent to the first region, and the height difference between the wall portions and the pin portions in the first region is greater than the height difference between the wall portions and the pin portions in the second region. [Effects of the Invention]

[0009] According to the present invention, it is possible to provide a technology that is advantageous in improving the flatness of a substrate when it is held by a substrate holding plate using suction. [Brief explanation of the drawing]

[0010] [Figure 1] This is a perspective view of the circuit board holder. [Figure 2] This is a perspective view showing the circuit board holders lined up. [Figure 3] This is a magnified view of the circuit board holder. [Figure 4] (a) is an enlarged view of the outer periphery 11 of the substrate holder shown in Figure 2, and (b) is a cross-sectional view of the portion indicated by line 7 in (a). [Figure 5] (a) is an enlarged view of the corner 12 of the substrate holder shown in Figure 2, and (b) is a cross-sectional view of the portion indicated by line 8 in (a). [Figure 6] (a) is an enlarged view of the central part 13 of the substrate holder shown in Figure 2, and (b) is a cross-sectional view of the part indicated by line 9 in (a). [Figure 7] This is a top view of the substrate holder according to the second embodiment. [Figure 8] This is a perspective view of the substrate holding plate according to the third embodiment. [Figure 9] This is a schematic diagram of the exposure apparatus according to this embodiment. [Figure 10]Figure 2 is a top view of the substrate holder. [Figure 11] A graph showing the relationship between the height difference between the wall and the pin section and the density of the wall section. [Figure 12] A graph showing the results of Example 1. [Figure 13] A graph showing the results of Comparative Example 1. [Modes for carrying out the invention]

[0011] Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings. However, the embodiments described below are only one embodiment of the invention and are not limited thereto. Common components will be described with reference to multiple drawings, and components with common reference numerals will be omitted from description as appropriate. Different items with the same name can be distinguished by adding "item number ○," such as "item number 1," "item number 2," etc.

[0012] Figure 1 shows a perspective view of the substrate holder 1 according to this embodiment. The substrate holder 1 in this embodiment has a base portion 2 and, on the base portion 2, a wall portion 3 and a plurality of pin portions 4, and the substrate 10 is supported by the wall portion 3 and the pin portions 4. The wall portion 3 is arranged around the pin portions 4 so as to surround them, but there may be gaps, as long as the substrate 10 can be held in place. By supporting the substrate 10 with the wall portion 3 and the pin portions 4, the contact area between the substrate holder 1 and the substrate 10 is reduced, and damage to the substrate 10 can be suppressed compared to when the pin portions 4 are not provided.

[0013] One of the two main surfaces (front and back) of the substrate holder plate 1 (referred to as the front for convenience) is the substrate holder surface, and the base portion 2 has a wall portion 3 and a pin portion 4 on the side facing the substrate holder surface. At least the uppermost surface of the wall portion 3 and the uppermost surface and side of the pin portion 4 constitute the substrate holder surface.

[0014] In this embodiment, the base portion 2, the wall portion 3, and the pin portion 4 are made of the same material, and the material constituting these is black alumina. However, it is not limited to black alumina, and alumina, ceramics, zirconia, glass, plastic, metal, etc. may also be used.

[0015] Further, it has a suction hole portion 5 for making the space partitioned by the wall portion 3 into a low pressure state by sucking air from the lower part of the substrate holding plate 1. Vacuum adsorption of the substrate 10 is performed through the suction hole portion 5.

[0016] When there is a portion with a high density in the wall portion 3, the contact area between the substrate 10 and the wall portion 3 increases at that portion. When adsorbing and holding the substrate 10, the substrate 10 is recessed at portions other than the pin portion 4 and the wall portion 3, so the substrate 10 warps upward at the pin portion 4 and the wall portion 3. Thereby, it is considered that the flatness of the substrate 10 deteriorates.

[0017] Also, when the contact area between the substrate 10 and the wall portion 3 is large, the amount by which the substrate 10 is warped upward by the wall portion 3 also increases. Due to the difference in the density of the wall portion 3 causing the contact area between the substrate 10 and the wall portion 3 to vary by location, the amount of upward warping of the substrate 10 also varies by location, and it is considered that the flatness of the substrate 10 deteriorates even more.

[0018] The substrate holding plate 1 according to this embodiment may be quadrilateral, circular, octagonal, or a quadrilateral such as a rounded rectangle.

[0019] The substrate 10 placed on the substrate holding plate 1 of the first example is a substrate 10 used in the manufacture of electronic devices. This substrate 10 may constitute a part of an electronic device, but may also be removed during the manufacture of the electronic device and not constitute the electronic device. The substrate 10 can be, for example, a glass substrate, a resin substrate, or a sapphire substrate used in the manufacture of an organic EL display, a liquid crystal display, a solar cell panel, etc.

[0020] The substrate holder plate 1 shown in Figures 1(a) to 1(d) can be used in various electronic device manufacturing equipment. For example, it can be used to hold the substrate 10 in an exposure apparatus that exposes a photoresist coated on a substrate 10. It can be used not only for exposure apparatuses, but also for film deposition apparatuses, etching apparatuses, and so on.

[0021] As shown in Figure 2, multiple substrate holders 1 can be arranged side by side and used as a substrate holder 111.

[0022] <First Embodiment> Figure 3 is an enlarged view of the substrate holder plate 1 in Figure 1(a). The substrate holder plate 1 is divided into four sections by wall sections 3, and each section is called a substrate holder section 100. In this embodiment, the height of the wall sections 3 is set to be smaller than the height of the pin sections 4, so that the contact area between the substrate 10 and the wall sections 3 can be reduced. If the height of the pin sections 4 is smaller, the substrate 10 will be held only by the wall sections 3, which may cause distortion in the substrate 10.

[0023] In this embodiment, the height of the pin portion 4 is made uniform, and the height of the wall portion 3 is varied to create a height difference between the wall portion 3 and the pin portion 4. In other words, the height difference between the wall portions 3 is greater than the height difference between the multiple pin portions 4.

[0024] However, the height difference between the wall section 3 and the pin section 4 can be achieved by making the height of the wall section 3 uniform and varying the height of the pin section 4, or the heights of both can be varied.

[0025] The partitioned substrate holder plate 1 is provided with exhaust grooves 50, which separate each of the substrate holding sections 100 and serve as areas that do not adsorb air. By providing the exhaust grooves 50, when the substrate 10 is adsorbed, it is possible to prevent the substrate 10 from being compressed. The exhaust grooves 50 may be omitted, and a wall portion 3 may be provided only on the outer circumference of the substrate holder plate 1.

[0026] Next, we will describe the different areas of wall section 3 with varying densities.

[0027] Figure 4(a) shows an enlarged view of the outer periphery 11 of the substrate holder plate 1 in Figure 3. Figure 4(b) shows a cross-sectional view along line 7. The density of the wall portion 3 in the outer periphery 11 is relatively low in this embodiment of the substrate holder plate 1. The height of the wall portion 3 is lower than the height of the pin portion 4 by a height difference of ha. The height difference ha is preferably, for example, 0.30 μm or more and 1.0 μm or less. The density of the wall portion 3 per unit area in the outer periphery 11 is preferably, for example, 4.0% or more and 8.0% or less.

[0028] Figure 5(a) shows an enlarged view of the corner 12 of the substrate holder plate 1 in Figure 3. Figure 5(b) shows a cross-sectional view along line 8. The corner 12 is the corner portion of the substrate holder 100, where the vertically and horizontally extending wall portions 3 intersect. The density of the wall portions 3 at the corner 12 is relatively greater than that at the location shown in Figure 4(a). The height of the wall portions 3 is lower than the height of the pin portion 4 by a height difference hb. The height difference hb is preferably, for example, 0.40 μm or more and 1.3 μm or less, but it is acceptable as long as it is greater than the height difference ha. The density of the wall portions 3 per unit area at the corner 12 is preferably, for example, 8.0% or more and 16% or less.

[0029] Figure 6(a) shows an enlarged view of the central part 13 of the substrate holder plate 1 in Figure 3. Figure 6(b) shows a cross-sectional view along line 9. The central part 13 is a region where the corners of the wall portion 3 are densely packed, and the proportion of the area occupied by the wall portion 3 is relatively larger than that of the areas shown in Figures 4(a) and 5(a). The height of the wall portion 3 is lower than the height of the pin portion 4 by a height difference hc. The height difference hc is preferably, for example, 0.50 μm or more and 1.5 μm or less, but it is acceptable as long as it is greater than the height differences ha and hb. The density of the wall portion 3 per unit area in the central part 13 is preferably, for example, 10% or more and 20% or less.

[0030] Here, density per unit area is defined in Figures 4 to 6 as the area of ​​wall 3 divided by the unit area A × A. The length A is preferably 50 mm to 80 mm, and more preferably 60 mm to 70 mm. The unit area does not have to be square; it may be rectangular or circular, but when comparing the density of two regions, one region and the other region being compared must be congruent.

[0031] If the height differences ha, hb, and hc are smaller than the above range, the warping of the substrate 10 cannot be suppressed. Also, if the height differences ha, hb, and hc are larger than the above range, the amount of air flowing into the wall portion 3 increases, and desired adsorption and retention may not be possible. Furthermore, by setting the density at each location within the above range, the height differences ha, hb, and hc can be kept within the above range.

[0032] In this embodiment, the pin portion 4 is frustoconical or cylindrical, and the diameter of the pin portion 4 is preferably 0.20 mm or more and 1.0 mm or less. The pitch from one pin portion 4 to the adjacent pin portion is preferably 1.0 mm or more and 20 mm or less. Here, the pitch is the distance from the center of one pin portion 4 to the center of the adjacent pin portion 4. The height of the pin portion 4 is preferably 0.10 mm or more and 1.6 mm or less, and the height of the pin portion 4 is preferably uniform.

[0033] The height of the wall portion 3 is preferably 0.10 mm or more and 1.5 mm or less. The width of the wall portion 3 is preferably 0.50 mm or more and 2.0 mm or less. The distance from the wall portion 3 to the adjacent pin portion 4 is preferably 1.0 mm or more and 3.0 mm or less. It is preferable that the wall portion 3 is wider than the pin portion 4. If the wall portion 3 and the pin portion 4 are within the above range, the substrate 10 can be brought into contact with both the pin portion 4 and the wall portion 3 when the substrate 10 is placed on it. In this embodiment, the wall portion 3 is the outer circumference of the substrate holding portion 100, but it is not limited to this, and bolt holes for fastening fixing bolts may be provided in the substrate holding portion 100, and the outer circumference thereof may be made into the wall portion 3.

[0034] In this embodiment, in order to reduce the reflectivity of the light irradiated on the substrate holding plate 1, the uppermost surface of the pin portion 4 is made rough. In addition, the surface of the base portion 2 on the substrate holding surface side and the side surface of the pin portion 4 are also made rough, thereby reducing the reflectivity on the surface of the substrate holding plate 1. If any of the uppermost surface of the pin portion 4, the surface of the base portion 2 on the substrate holding surface side, and the side surface of the pin portion 4 is rough, it can contribute to the reduction of the reflectivity. Here, the rough surface is, for example, a surface with an arithmetic mean roughness Ra of 0.40 μm or more and 4.0 μm or less.

[0035] In addition, in order to further reduce the reflectivity, an antireflection film may be provided on the surface of the substrate holding plate 1, or a film with high hardness may be provided to suppress the wear of the rough surface.

[0036] In this embodiment, according to the density of the wall portion 3 per unit area, the height difference between the pin portion 4 and the wall portion 3 is changed, and the relationship of the height differences ha, hb, hc is set as ha < hb < hc. By adopting such a configuration, even at locations (such as the outer peripheral portion 11, corner portion 12, central portion 13, etc.) where the density of the wall portion 3 is different, after reducing the contact area between the substrate 10 and the wall portion 3, the contact area can be made uniform. Therefore, it is possible to suppress the flatness of the substrate 10 from being impaired when the substrate 10 is held by the substrate holding plate 1.

[0037] In this embodiment, the height difference between the wall portion 3 and the pin portion 4 is changed according to the density of the wall portion 3, and a configuration is adopted in which the height difference is set large at locations where the density of the wall portion 3 is high. Therefore, even at locations where the density of the wall portion 3 is high, it is possible to suppress the adsorbed substrate 10 from warping upward at the wall portion 3, and the substrate 10 can be adsorbed and held with high flatness.

[0038] <Second Embodiment> Next, the substrate holding plate 1 according to the second embodiment will be described with reference to FIG. 7. FIG. 7 is an enlarged top view of the substrate holding portion 100 as one of the four partitioned substrate holding plates 1 in FIG. 3. This embodiment is different from the first embodiment in that the height of the wall portion 3 is changed according to the distance from the four vertices 30 of the wall portion 3. Although one substrate holding portion 100 is taken as an example for explanation in FIG. 7, any substrate holding portion 100 can have the same configuration.

[0039] The wall portion 3 of the substrate holding portion 100 is a rectangle with a side length of L1. The substrate holding portion 100 does not necessarily have to be a square; it is sufficient if at least one side has a side length of L1. In this embodiment, in setting the height difference between the wall portion 3 and the pin portion 4, the substrate holding portion 100 is divided into nine regions, each at a distance of L1 / 3 from the vertex 30 in both the vertical and horizontal directions. For the sake of explanation, the rows are classified as A, B, and C, and the columns as D, E, and F, and each region is referred to as AD, AE, etc.

[0040] Each region AD to CF is a quadrilateral with sides of length L1 / 3, preferably with square-shaped walls 3 and each region being square-shaped. Walls 3 located within L1 / 3 of a vertex 30 can be designated as corners 31, and walls 3 other than the corners 31 can be designated as edges 32. There are four corners 31 and four edges 32. The height of each corner 31 is smaller than the height of each edge 32.

[0041] A height difference is created as the height of the wall portion 3 gradually increases or decreases from the height of the edge portion 32 to the height of the corner portion 31, or from the height of the corner portion 31 to the height of the edge portion 32. In other words, the upper surface of the wall portion 3 is inclined. To create an inclined structure, for example, the substrate 10 may be placed and held in place, and any areas where warping occurs may be shaved off.

[0042] Furthermore, the height of wall sections 33 located within a distance L1 / 3 from vertex 30 is smaller than the height of wall sections 34 other than wall sections 33. For example, wall sections 3 in regions AD, AF, CD, and CF are wall sections 33, and wall sections 3 in regions AE, BD, BF, and CE are wall sections 34.

[0043] In this embodiment, the height of the corner portion 31 is smaller than the height of the side portion 32. Since the height of the pin portion 4 is substantially uniform, the height difference between the pin portion 4 and the corner portion 31 is larger than the height difference between the pin portion 4 and the side portion 32. Similarly, the height difference between the pin portion 4 and the wall portion 33 is larger than the height difference between the pin portion 4 and the wall portion 34. Preferably, the height difference between the corner portion 31 and the side portion 32 is 0.10 μm or more and 1.2 μm or less.

[0044] Therefore, similar to the first embodiment, the contact area between the substrate 10 and the wall portion 3 can be reduced and made uniform, thereby suppressing any loss of flatness of the substrate 10 when the substrate 10 is held by the substrate holding plate 1.

[0045] <Third Embodiment> The substrate holder 1 according to this embodiment will be explained with reference to Figure 8. The substrate holder 1 of this embodiment differs from the first embodiment in that its outer shape is circular.

[0046] Even though the outer shape is circular, similar to the first embodiment, the height of the wall portion 3 at the corners 12 and the central part 13 is smaller than the height of the wall portion 3 at the outer circumference 11. That is, the height difference between the wall portion 3 at the corners 12 and the central part 13 and the pin portion 4 is greater than the height difference between the wall portion 3 and the pin portion 4 at the outer circumference 11. With such a configuration, similar to the first embodiment, even in areas where the density of the wall portion 3 is high, it is possible to suppress the substrate 10 being held by adsorption by the wall portion 3 from becoming warped, and the substrate 10 can be adsorbed and held with high flatness.

[0047] The present invention is not limited to the embodiments described above, and many modifications are possible within the technical concept of the present invention.

[0048] Figure 8 shows a schematic diagram of an exposure apparatus. The optical instrument EQP, which is the exposure apparatus, comprises a light source 14 and mirrors 16 and 17 that constitute the illumination optical system. The optical instrument EQP also comprises a reticle stage 19 that supports a reticle 18, which is a pattern forming means, a projection optical system 25 that projects the pattern formed on the reticle 18, and a substrate holder plate 1 that supports the substrate 10. Exposure light 15 from the light source 14 is reflected by the mirrors 16 and 17 of the illumination optical system and guided to the reticle 18. The exposure light 15 accompanied by the pattern formed on the reticle 18 is focused by the projection optical system 25 and projected onto the substrate 10. The substrate 10 and the substrate holder plate 1 are moved by a substrate moving means 26, and the pattern formed on the reticle 18 by the light source 14 is projected onto the substrate 10. The substrate 10 is coated with photoresist, and the photoresist is exposed by the exposure light 15. The substrate 10 may be a semiconductor wafer or a glass substrate for an FPD (flat panel display). The exposure light of an exposure apparatus is typically ultraviolet light. The wavelength of the exposure light is 436 nm for a g-line source and approximately 365 nm for an i-line source. For a KrF excimer laser source, it is approximately 248 nm, for an ArF excimer laser source, it is approximately 193 nm, and for an EUV (extreme ultraviolet) source, it is 10-20 nm. The projection optical system may be a reduction projection type, a 1:1 projection type, or a magnification projection type. Here, a transmission type reticle 18 is used as an example, but a reflection type reticle 18 may also be used. The projection optical system may be a refractive type using a transmission lens or a reflection type using a mirror. [Examples]

[0049] Next, the present invention will be described in detail based on examples.

[0050] (Example 1) The substrate holder plate 1 fabricated in Example 1 will be explained using Figure 10. The substrate holder plate 1 consists of a substrate holding section 100 divided into four sections. The substrate holding section 100 has a side length L1 of 95 mm, and the substrate holder plate 1 is a square with a side length L2 of 200 mm. The material of the substrate holder plate 1 is alumina. The substrate holder plate 1 is provided with wall sections 3 and pin sections 4. The shape of the pin sections 4 is cylindrical with a diameter of 0.8 mm and a height of 0.5 mm. The pitch between adjacent pin sections 4 is 4.0 mm. The wall sections 3 have a continuous structure with a width of 2.0 mm. The distance between the wall sections 3 and adjacent pin sections 4 is 2.0 mm.

[0051] In this example, we evaluated Figure 10, which shows the substrate holder 1 divided into nine sections.

[0052] In this embodiment, the height difference between the wall portion 3 and the pin portion 4 is set according to the density of the wall portion 3 per unit area. Here, the unit area is 66.6 mm × 66.6 mm. In setting the height difference between the wall portion 3 and the pin portion 4, the substrate holder plate 1 was divided into nine regions, each with a length of L2 / 3 in both the vertical and horizontal directions. For the sake of explanation, the row direction is classified as G, H, and J, and the column direction as K, M, and N, and each region is referred to as GK, GM, etc. Table 1 shows the density occupied by the wall portion 3 in each region. There are three types of densities: GK, GN, JK, and JN have a density of 6.1%, GM, HK, HN, and JM have a density of 8.7%, and HM has a density of 10.7%.

[0053] Figure 11 shows the relationship between the density of the wall portion 3 in the region and the height difference between the wall portion 3 and the pin portion 4. As the density of the wall portion 3 increases, the height difference between the wall portion 3 and the pin portion 4 is set to be larger.

[0054] [Table 1]

[0055] Table 2 shows the height difference between the wall portion 3 and the pin portion 4 in each region. In this embodiment, the height difference between the wall portion 3 and the pin portion 4 was set to 1.0 μm in the high-density HM region, to 0.7 μm in the GK, GN, JK, and JN regions with a density of 6.1%, and to 0.8 μm in the GM, HK, HN, and JM regions with a density of 8.7%.

[0056] [Table 2]

[0057] The following (1) was used to evaluate the substrate holder plate 1. (1) Evaluation of the amount of warping at wall section 3 The cross-sectional shape of the area indicated by line 6 in Figure 10 was extracted, and the amount of warping of the substrate 10 at the wall portion 3 was evaluated.

[0058] (Evaluation results) Figure 12 shows the evaluation results of the upward curve shape at wall section 3 in Example 1.

[0059] The results for Example 1 were as follows. Curvature at wall section 3: 146 nm

[0060] (Comparative Example 1) The substrate holder of Comparative Example 1 was manufactured in the same manner as in Example 1, except that the height difference between the wall portion and the pin portion was uniformly set to 0.7 μm, regardless of the density of the wall portion.

[0061] Figure 13 shows the evaluation results of the upward curvature shape at wall section 3 in Comparative Example 1. The results for Comparative Example 1 were as follows. Curvature at the wall section: 421 nm

[0062] (Evaluation of the examples and comparative examples) In this embodiment, the flatness and the amount of warping of the wall portion 3 evaluated are desirable as small as possible. In Embodiment 1, the amount of warping of the wall portion 3 was 200 nm or less, and a substrate holding plate 1 with the function of holding the substrate with good flatness was obtained.

[0063] In contrast, in Comparative Example 1, the amount of warping was particularly large in the central part where the density of the wall was high, with the amount of warping of the wall exceeding 400 nm.

[0064] The substrate holding plate 1 of the embodiment was shown to have superior functionality in holding the substrate with good flatness compared to the substrate holding plate of the comparative example. [Explanation of Symbols]

[0065] 1 Board holding board 3 wall 4 Pin section 10 circuit boards

Claims

1. A substrate holder having a plurality of pin portions for supporting the substrate and a wall portion arranged around the plurality of pin portions, The wall portion has four corners and four sides connecting the corners, and the height of the corners is smaller than that of the sides. The density of the wall portion in the first region, which includes the first pin portion among the plurality of pin portions and the first wall portion among the wall portions, is smaller than the density of the wall portion in the second region, which includes the second pin portion among the plurality of pin portions and the second wall portion among the wall portions, and which has a shape congruent to the first region. In the first region, the first wall portion is formed lower than the first pin portion, and the portion from the first wall portion to the first pin portion is formed lower than the first wall portion. In the second region, the second wall portion is formed lower than the second pin portion, and the portion from the second wall portion to the second pin portion is formed lower than the second wall portion. A substrate holder characterized in that the height difference between the second wall portion and the second pin portion in the second region is greater than the height difference between the first wall portion and the first pin portion in the first region.

2. The first region and the second region are square in shape, with sides of 50 mm or more and 80 mm or less. The substrate holding plate according to claim 1, characterized in that the density is 4.0% or more and 20.0% or less.

3. The substrate holding plate according to claim 1 or 2, characterized in that the wall portion has a quadrilateral shape.

4. The substrate holding plate has four substrate holding portions, each having the wall portion, The substrate holding plate according to any one of claims 1 to 3, characterized in that the substrate holding portions of the four substrate holding portions that are adjacent to each other are separated from each other by grooves.

5. The wall portion has a quadrilateral shape with side length L, The substrate holding plate according to any one of claims 1 to 4, characterized in that the corner portion is a wall portion located within L / 3 from the vertex of the wall portion, and the side portion is a wall portion other than the corner portion.

6. The substrate holding plate according to any one of claims 1 to 5, characterized in that the height difference between the corner and the edge is 0.10 μm or more and 1.2 μm or less.

7. The substrate holding plate according to any one of claims 1 to 6, characterized in that the wall portion is inclined.

8. The substrate holder plate has a first portion and a second portion in which the corners are more densely packed than in the first portion. The substrate holding plate according to any one of claims 1 to 7, characterized in that the height of the wall portion of the second portion is smaller than that of the first portion.

9. The substrate holder according to any one of claims 1 to 8, characterized in that it has a suction hole for drawing air from the lower part of the substrate holder.

10. The substrate holding plate according to any one of claims 1 to 9, characterized in that the height difference between the second wall portion and the second pin portion is 0.30 μm or more and 1.5 μm or less.

11. The substrate holding plate according to any one of claims 1 to 10, characterized in that the height difference between the first pin portion and the second pin portion is smaller than the height difference between the first wall portion and the second wall portion.

12. The substrate holding plate according to any one of claims 1 to 11, characterized in that the distance from the second wall portion to the second pin portion in the second region is 1.0 mm or more and 3.0 mm or less.

13. The substrate holder according to any one of claims 1 to 12, characterized in that the height of the first pin portion and the second pin portion is 0.10 mm or more and 1.6 mm or less, and the distance between two adjacent pin portions among the plurality of pin portions is 1.0 mm or more and 20 mm or less.

14. The substrate holding plate according to any one of claims 1 to 13, characterized in that the height of the first wall portion and the second wall portion is 0.10 mm or more and 1.5 mm or less, and the width of the first wall portion and the second wall portion is 0.50 mm or more and 2.0 mm or less.

15. The substrate holder according to any one of claims 1 to 14, characterized in that the first pin portion and the second pin portion are cylindrical or truncated cone-shaped.

16. The substrate holder according to any one of claims 1 to 15, wherein the substrate holder has a base portion with a substrate holding surface, and the plurality of pin portions and the wall portion are provided on the side of the base portion that is on the substrate holding surface.

17. The substrate holder according to claim 16, characterized in that the base, the wall, and the plurality of pins are made of alumina.

18. The substrate holding plate according to claim 16 or 17, characterized in that at least one of the surfaces of the base on the substrate holding surface side, the uppermost surface of the plurality of pin portions, or the side surfaces of the plurality of pin portions is a rough surface.

19. The substrate holding plate according to claim 18, characterized in that the rough surface is a rough surface having an arithmetic mean roughness Ra of 0.40 μm or more and 4.0 μm or less.

20. A method for manufacturing a device, characterized by placing a substrate on a substrate holding plate according to any one of claims 1 to 19 and exposing the substrate to light.

21. A substrate holder according to any one of claims 1 to 19, An exposure apparatus characterized by comprising an optical system for irradiating a substrate with light emitted from a light source, and a moving means for moving the substrate holding plate.

22. The exposure apparatus according to claim 21, characterized in that the optical system includes a mirror.

23. The exposure apparatus according to claim 21, characterized in that the optical system includes a transmissive lens.

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