Vacuum deposition apparatus, rotation angle determination method, and method for manufacturing a deposited material.

Abstract

To provide a technique capable of accurately determining the rotation angle of an object to be vapor-deposited in a vacuum evaporation system capable of rotating and revolving the object to be vapor-deposited.SOLUTION: A vacuum evaporation system includes a plurality of holders, an imaging part and a control part. The plurality of holders capable of holding objects to be vapor-deposited having a deposit vapor-deposited, respectively, can revolve while rotating around a revolution axis; the imaging part can image at least one holder of the plurality of holders holding the objects to be vapor-deposited; and the control part determines the rotation angle of the object to be vapor-deposited on the basis of the image imaged by the imaging part.SELECTED DRAWING: Figure 1

Description

Technical Field

[0001] This technology relates to technologies such as vacuum deposition apparatuses.

Background Art

[0002] The vacuum deposition method is a technique for forming a film on a deposition target by heating and evaporating a deposition material such as a metal or an oxide in a vacuum and adhering and depositing the vapor on the deposition target such as a substrate.

[0003] As one type of the vacuum deposition method, a technique for forming a film while rotating a deposition target such as a substrate around its own axis within a vacuum chamber is known (see, for example, Patent Document 1 below).

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] In a vacuum deposition apparatus in which the deposition target can rotate around its own axis, a technology capable of accurately determining the rotation angle of the deposition target is required.

[0006] In view of the above circumstances, an object of this technology is to provide a technology capable of accurately determining the rotation angle of a deposition target in a vacuum deposition apparatus in which the deposition target can rotate around its own axis.

Means for Solving the Problems

[0007] The vacuum deposition apparatus according to this technology includes a plurality of holders, an imaging unit, and a control unit. Each of the plurality of holders can hold a deposition target on which a deposition material is to be deposited, and is capable of revolving while rotating around its own axis. The imaging unit is capable of imaging at least one of the plurality of holders that hold the material to be deposited. The control unit determines the rotation angle of the object to be coated based on the image captured by the imaging unit.

[0008] This makes it possible to accurately determine the rotation angle of the object to be deposited in a vacuum deposition apparatus in which the object to be deposited can rotate both horizontally and vertically.

[0009] In the vacuum deposition apparatus described above, the control unit may switch between a dynamic deposition mode, in which deposition is performed on the object to be deposited while it is rotating or orbiting, and a static deposition mode, in which deposition is performed on the object to be deposited while it is stationary.

[0010] In the vacuum deposition apparatus described above, the control unit may, in the static deposition mode, cause the imaging unit to perform imaging and determine the rotation angle of the object to be deposited.

[0011] In the vacuum deposition apparatus described above, the field of view of the imaging unit may include at least the range in which the holder moves in the orbital direction when the holder rotates once.

[0012] The vacuum deposition apparatus described above may further include an incidence angle adjustment mechanism that rotates the holder about an axis perpendicular to the orbital axis to adjust the incidence angle of the deposited material on the material to be deposited.

[0013] In the vacuum deposition apparatus described above, the field of view of the imaging unit may include at least the perturbation range when the holder is perturbed in the perturbation direction by the rotation of the holder due to the adjustment of the incident angle.

[0014] In the vacuum deposition apparatus described above, the holder may have a mark for determining the rotation angle of the object to be deposited.

[0015] In the vacuum deposition apparatus described above, the mark may be positioned away from the rotation axis of the holder and may rotate around the rotation axis in accordance with the rotation and revolution of the holder.

[0016] In the above-described vacuum evaporation apparatus, the holder may have a flange portion, and the mark may be provided on the flange portion.

[0017] In the above-described vacuum evaporation apparatus, the mark may be a hole portion penetrating the flange portion.

[0018] In the above-described vacuum evaporation apparatus, the control unit may determine the rotation angle based on the position of the mark and the center position of the holder in the image.

[0019] In the above-described vacuum evaporation apparatus, the control unit may execute a correction process for correcting the holder in the image as viewed from the front of the holder, and determine the rotation angle based on the image after the correction process.

[0020] In the above-described vacuum evaporation apparatus, it may further include a vacuum chamber and a first window portion provided in the vacuum chamber, and the imaging unit may image the holder through the first window portion from the outside of the vacuum chamber.

[0021] In the above-described vacuum evaporation apparatus, it may further include a first anti-deposition portion for preventing the deposition of the deposited material on the first window portion.

[0022] In the above-described vacuum evaporation apparatus, the first anti-deposition portion may include a first shutter that switches between a shielding state for shielding the first window portion and an exposure state for exposing the first window portion inside the vacuum chamber.

[0023] In the above-described vacuum evaporation apparatus, the first anti-deposition portion may include an anti-deposition plate interposed between the first window portion and the deposition source of the deposited material inside the vacuum chamber.

[0024] In the above-described vacuum evaporation apparatus, it may further include an illumination unit that irradiates light to the holder during imaging by the imaging unit.

[0025] In the above-described vacuum deposition apparatus, a vacuum chamber and a second window provided in the vacuum chamber are further provided, and the illumination unit may irradiate light from the outside of the vacuum chamber to the holder through the second window.

[0026] The above-described vacuum deposition apparatus may further include a second anti-deposition portion that prevents the deposited material from depositing on the second window.

[0027] In the above-described vacuum deposition apparatus, the second anti-deposition portion may include a second shutter that switches between a shielding state in which the second window is shielded and an exposure state in which the second window is exposed inside the vacuum chamber.

[0028] In the above-described vacuum deposition apparatus, a rotating body that rotatably supports each rotation axis of the plurality of holders and is rotatable around the revolution axis, a first mark for visual observation provided on the holder and rotating around the rotation axis in accordance with the self-revolution of the holder, and a second mark for visual observation provided on the rotating body and rotating around the revolution axis in accordance with the rotation of the rotating body, and the second mark for visual observation whose position coincides with the first mark for visual observation when the holder reaches a predetermined rotation angle may be further provided.

[0029] The method for determining the rotation angle according to the present technology can hold the deposition targets on which the deposited material is to be deposited, and in a plurality of holders that can revolve while rotating around the revolution axis respectively, at least one of the plurality of holders holding the deposition targets is imaged by an imaging unit. Based on the image imaged by the imaging unit, the rotation angle of the deposition target is determined.

[0030] The method for manufacturing a material to be deposited with a material according to this technology involves a plurality of holders, each capable of holding a material to be deposited on and capable of revolving while rotating on its own axis, wherein at least one of the plurality of holders holding the material to be deposited is imaged by an imaging unit, the rotation angle of the material to be deposited is determined based on the image captured by the imaging unit, and the material is deposited on the material to be deposited based on the determined rotation angle of the material to be deposited. [Effects of the Invention]

[0031] As described above, this technology provides a method for accurately determining the rotation angle of an object to be deposited in a vacuum deposition apparatus in which the object to be deposited can rotate and orbit. [Brief explanation of the drawing]

[0032] [Figure 1] This is a schematic side view showing a vacuum deposition apparatus according to one embodiment of this technology. [Figure 2] This is a schematic diagram showing the upper part of a vacuum deposition apparatus as viewed from above. [Figure 3A] This is a view from above showing each holder and each wafer while they are rotating on their own axis and around their own axis. [Figure 3B] This is a view from above showing each holder and each wafer while they are rotating on their own axis and around their own axis. [Figure 4] This is an exploded perspective view showing the image acquisition target holder. [Figure 5] This is a view of the cylindrical and flange portions of the imaging target holder from above. [Figure 6] This figure shows another example of an imaging target holder. [Figure 7] This is a view of the first and second shutters from the front. [Figure 8] This diagram illustrates the field of view provided by the imaging unit, and shows the movement of the target holder and wafer on the image as captured by the imaging unit. [Figure 9]This diagram shows the relationship between the field of view determined by the imaging unit and the first and second shutters. [Figure 10] This diagram shows the relationship between the field of view provided by the imaging unit and the protective plate. [Figure 11] This is a flowchart showing the processing performed by the control unit in the control device. [Figure 12] This is a diagram to explain the correction process. [Figure 13] This figure shows an example of a method for pre-programming correction processing. [Figure 14] This figure shows the corrected images when the rotation angles of the image capture target holder are 0°, 30°, 60°, 90°, 120°, 150°, 180°, 210°, 240°, 270°, 300°, and 330°, respectively. [Figure 15] This figure shows the process for determining the rotation angle of the holder and wafer. [Figure 16] This is a schematic diagram of the upper part of a vacuum deposition apparatus viewed from above, showing the markings for visual inspection. [Modes for carrying out the invention]

[0033] The embodiments of this technology will be described below with reference to the drawings.

[0034] ≪First Embodiment≫ <Overall configuration of the vacuum deposition apparatus 100> Figure 1 is a schematic side view showing a vacuum deposition apparatus 100 according to one embodiment of this technology. Figure 2 is a schematic view of the upper part of the vacuum deposition apparatus 100 as seen from above. As shown in Figure 1, the vacuum deposition apparatus 100 includes a vacuum chamber 20 as a vacuum vessel.

[0035] Inside the vacuum chamber 20, on its upper side, are arranged a plurality of holders 10, each capable of holding a wafer 1 (the material to be deposited), a rotation axis 21 fixed to each holder 10, and a rotation gear 22 fixed to each rotation axis 21.

[0036] Furthermore, inside the vacuum chamber 20, on its upper side, there is a rotating body 24 that can rotatably support the rotation axis 21 of the holder 10 and rotate around the orbital axis 23 as its central axis, and a fixed gear 26 that meshes with the rotation gear 22 of the holder 10.

[0037] In Figure 2, the holder 10 below the rotating body 24 and the wafer 1 held below the holder 10 are hidden and not normally visible, but in order to make this embodiment easier to understand, the holder 10 and the wafer 1 are shown with solid lines in Figure 2. The same applies to Figures 3A, 3B, and 16, which will be described later.

[0038] Furthermore, inside the vacuum chamber 20, a crucible 31 for storing the deposition material to be used as a deposition source and an electron beam device 32 for heating the deposition material by irradiating the deposition material in the crucible 31 with an electron beam are arranged on its lower side.

[0039] Furthermore, inside the vacuum chamber 20, a partition wall 33 is provided to cover the crucible 31 and the electron beam apparatus 32, and a shutter 34 for the deposition source is provided in the partition wall 33, which can open and close an opening in the partition wall 33.

[0040] Furthermore, a vacuum pump 41 is provided outside the vacuum chamber 20 to evacuate the inside of the vacuum chamber 20. Also outside the vacuum chamber 20, there is an imaging unit 43 capable of imaging at least one of the multiple holders 10 that hold the wafer 1, and an illumination unit 44 that irradiates light onto the holder 10 (and wafer 1) to be imaged when imaging is performed by the imaging unit 43.

[0041] Furthermore, outside the vacuum chamber 20, there is a display unit 45 that displays images captured by the imaging unit 43, and a control device 46 that comprehensively controls each part of the vacuum deposition apparatus 100.

[0042] Furthermore, in the outer wall portion constituting the vacuum chamber 20, a first window portion 47 is provided at a position corresponding to the imaging unit 43, and a second window portion 48 is provided at a position corresponding to the illumination unit 44.

[0043] Inside the vacuum chamber 20, a first anti-deposition part 51 is provided at a position corresponding to the first window 47 to prevent deposits from adhering to and accumulating on the first window 47. The first anti-deposition part 51 includes a first shutter 53 and an anti-deposition plate 54.

[0044] Inside the vacuum chamber 20, a second anti-deposition part 52 is provided at a position corresponding to the second window 48 to prevent deposits from adhering to and accumulating on the second window 48. The second anti-deposition part 52 includes a second shutter 55 (which may also include an anti-deposition plate).

[0045] <Detailed configuration of each part of the vacuum deposition apparatus 100> The fixed gear 26 is an external gear configured in the shape of a disc, and multiple teeth are formed on the lower side of its outer circumference to mesh with the rotation gear 22 of the holder 10. Inside the vacuum chamber 20, multiple support columns 27 are fixed to its top surface, and the fixed gear 26 is fixed to the lower ends of these support columns 27. In addition, a through-hole is provided at the center of the fixed gear 26 for inserting the orbital axis 23.

[0046] The orbital axis 23 is an axis in the vertical direction (Z-axis direction) and is inserted inside and outside the vacuum chamber 20. The orbital axis 23 is rotatably supported on the top surface of the vacuum chamber 20 via a rotary inlet 62. The rotary inlet 62 is made of a ferro seal or the like and is capable of maintaining airtightness inside the vacuum chamber 20 while rotatably supporting the orbital axis 23. The upper end of the orbital axis 23 is connected to a motor 61, and the lower end of the orbital axis 23 is fixed at the center position of the rotating body 24.

[0047] The motor 61 is driven in response to commands from the control device 46 (control unit), and this drive rotates the orbital axis 23. A rotation angle detector, such as a rotary encoder, may be provided with the motor 61, in which case the rotation angle information from the rotation angle detector is fed back to the control device 46.

[0048] The rotating body 24 is capable of rotatably supporting the rotation axes 21 of each of the multiple holders 10, and is also capable of rotating about the orbital axis 23 as its central axis. The rotating body 24 is configured in a disc shape, and its center is fixed to the lower end of the orbital axis 23. Furthermore, on its radial outer circumference, the rotating body 24 rotatably supports the rotation axes 21 of each holder 10 at equal intervals in the circumferential direction.

[0049] In the rotating body 24, an incidence angle adjustment mechanism 25 is provided at a position radially inward from the point where the rotation axis 21 of the holder 10 is pivotally supported. The incidence angle adjustment mechanism 25 rotates the holder 10 around an axis perpendicular to the orbital axis 23 to adjust the incidence angle of the deposited material on the wafer 1. The incidence angle is the angle formed by the lower surface of the holder 10 and the surface of the wafer 1 with respect to the vertical direction (Z-axis direction).

[0050] The incidence angle adjustment mechanism 25 is composed of, for example, a hinge mechanism. The incidence angle adjustment by the incidence angle adjustment mechanism 25 may be performed automatically by a motor or the like, or manually. Typically, the incidence angle for each wafer 1 is set to a common angle for all wafers 1, but the incidence angle for some wafers 1 may be set to be different from the incidence angles of other wafers 1.

[0051] The rotation axis 21 is rotatably supported on the rotating body 24. The upper end of the rotation axis 21 is fixed to the rotation center of the rotation gear 22, and the lower end of the rotation axis 21 is fixed to the rotation center of the holder 10.

[0052] The rotation gear 22 is an external gear configured in the shape of a disc, and multiple teeth are formed on its outer surface to mesh with the fixed rotation gear 22. The fixed gear 26 and the rotation gear 22 are designed so that their respective teeth mesh properly even when the holder 10 rotates due to the incident angle adjustment mechanism 25.

[0053] Herein, the configuration for the rotation of the holder 10 in this embodiment (incidence angle adjustment mechanism 25, fixed gear 25 when the holder rotates, meshing structure of the rotation gear 22, etc.) can be any configuration as long as it can adjust and fix the incidence angle of the deposited material on the wafer 1 while maintaining a state in which an appropriate driving force is supplied to the rotation axis 21.

[0054] Each of the multiple holders 10 is capable of holding a wafer 1 and is capable of revolving while rotating on its own axis 23.

[0055] Wafer 1 is an example of a substrate on which a deposit material is deposited. The substrate can be any object on which a deposit material is deposited. Wafer 1 is configured in a disc shape and has a linear notch in part due to an orientation flat (hereinafter abbreviated as "orifla").

[0056] Furthermore, in this embodiment, the wafer 1 is provided with projections or grooves (or both) (not shown) extending in a specific angular direction on its surface, and the deposited material is deposited not only on the surface of the wafer 1 but also on the projections (especially the side surfaces extending in one direction) or grooves (especially the inner wall surfaces extending in one direction).

[0057] Figures 3A and 3B show a view from above of each holder 10 and each wafer 1 as they rotate on their own axis and revolve around the orbital axis 23. Referring to Figures 2 and 3, the multiple holders 10 are arranged at a constant interval (60°) in the circumferential direction, and they rotate on their own axis and revolve around the orbital axis 23 while maintaining this constant interval. In the example shown in the figures, there are six holders 10 (at 60° intervals), but the number of holders 10 is not particularly limited and can be changed as appropriate.

[0058] The orbital speed and rotational speed of each holder 10 (each wafer 1) when it revolves around itself are common to each holder 10 (each wafer 1). In this embodiment, the orbital direction of each holder 10 (each wafer 1) is counterclockwise when viewed from above (clockwise when viewed from below (the front side of the holder 10)). Also, the rotational direction of each holder 10 (each wafer 1) is counterclockwise when viewed from above (clockwise when viewed from below (the front side of the holder 10)). Note that the rotational direction of revolution and orbit may be reversed.

[0059] Referring to Figures 3A and 3B, the orbital and rotational angles of each holder 10 and each wafer 1 will be explained. The orbital angle of each holder 10 and each wafer 1 is set with the 12 o'clock position as 0° in the coordinate system based on the vacuum chamber 20, and the counterclockwise direction (viewed from above) is the direction in which the angle increases. The rotational angle of each holder 10 and each wafer 1 is set based on the angle of the orientation flat with respect to the orbital axis 23, and the counterclockwise direction (viewed from above) is the direction in which the angle increases.

[0060] The upper part of Figure 3A shows the state when the orbital angles of each holder 10 and each wafer 1 are 0°, 60°, 120°, 180°, and 240°, and the rotation angle is 0°. For each holder 10 and each wafer 1, the rotation angle becomes 0° when the straight line connecting the center of the orbital axis 23 and the center of the rotation axis 21 (the center of the holder 10 and wafer 1) is perpendicular to the straight line due to the orientation flat, and the orientation flat is radially outside the rotation axis 21.

[0061] The central diagram in Figure 3A shows the state when the orbital angles of each holder 10 and each wafer 1 are 15°, 75°, 135°, 195°, 255°, and 315°, and the rotation angle is 90°. For each holder 10 and each wafer 1, the rotation angle is 90° when the line connecting the center of the orbital axis 23 and the center of the rotation axis 21 (the center of the holder 10 and wafer 1) is parallel to the line due to the orientation flat, and the orientation flat is to the left of the rotation axis 21 (viewed from above).

[0062] The lower part of Figure 3A shows the state when the orbital angles of each holder 10 and each wafer 1 are 30°, 90°, 150°, 210°, 270°, and 330°, and the rotation angle is 180°. For each holder 10 and each wafer 1, the rotation angle is 180° when the straight line connecting the center of the orbital axis 23 and the center of the rotation axis 21 (the center of the holder 10 and wafer 1) is perpendicular to the straight line due to the orientation flat, and the orientation flat is radially inward from the rotation axis 21.

[0063] The upper diagram of Figure 3B shows the state when the orbital angles of each holder 10 and each wafer 1 are 45°, 105°, 165°, 225°, 285°, and 345°, and the rotation angle is 270°. For each holder 10 and each wafer 1, the rotation angle is 270° when the line connecting the center of the orbital axis 23 and the center of the rotation axis 21 (the center of the holder 10 and wafer 1) is parallel to the line due to the orientation flat, and the orientation flat is to the right of the rotation axis 21 (when viewed from above).

[0064] The lower diagram of Figure 3B shows the state when the orbital angles of each holder 10 and each wafer 1 are 60°, 120°, 180°, 240°, 300°, and 360°, and the rotation angle is 360°. For each holder 10 and each wafer 1, the rotation angle is 360° when the line connecting the center of the orbital axis 23 and the center of the rotation axis 21 (the center of the holder 10 and wafer 1) is perpendicular to the line due to the orientation flat, and the orientation flat is radially outside the rotation axis 21. In other words, a rotation angle of 360° is the same as a rotation angle of 0°.

[0065] As can be seen from Figure 3, the rotation angle of each holder 10 and each wafer 1 changes according to the orbital motion, but the rotation angle is common to each holder 10 and each wafer 1.

[0066] In the example shown in Figure 3, each holder 10 and each wafer 1 are designed to revolve 60° when they rotate 360° on their own axis. On the other hand, the angle at which each holder 10 and each wafer 1 revolve when they rotate 360° on their own axis is not limited to 60° and can be changed as appropriate.

[0067] In this embodiment, the angle at which each holder 10 and each wafer 1 revolve (60°) when each holder 10 and each wafer 1 rotates 360° is designed to coincide with the circumferential spacing (60°) between each holder 10.

[0068] These angles do not necessarily have to coincide. In this case, the alignment of each holder 10 and each wafer 1 to the origin position (described later) by pulse control of the motor 61 is not performed, and the alignment is performed based on the images of the holder 10 and wafer 1 captured by the imaging unit 43.

[0069] In Figures 2 and 3, the holder 10 to be imaged by the imaging unit 43 is highlighted with a black circle. In this embodiment, there is one specific holder 10 to be imaged. This holder 10 to be imaged is the holder 10 located at an orbital angle of 60° when the reference holder 10 at the origin (the holder 10 at the 12 o'clock position in the upper part of Figures 2 and 3A) is located at an orbital angle of 0° in the coordinate system based on the vacuum chamber 20.

[0070] In the following explanation, when distinguishing the holder 10 to be imaged from other holders 10, that holder 10 will be referred to as the imaged holder 10a. Also, in the following explanation, in the coordinate system based on the vacuum chamber 20, the position where the reference holder 10 at the origin (the holder 10 at the 12 o'clock position in the upper part of Figures 2 and 3A) has an orbital angle of 0° and a rotational angle of 0°, and the imaged holder 10a has an orbital angle of 60° and a rotational angle of 0° will be referred to as the origin position (see the upper part of Figures 2 and 3A).

[0071] Figure 4 is an exploded perspective view showing the imaging target holder 10a. Figure 5 is a view of the cylindrical portion 11 and flange portion 12 of the imaging target holder 10a from above.

[0072] As shown in Figures 4 and 5, the imaging target holder 10a has a cylindrical portion 11, a flange portion 12 fixed to the lower side of the cylindrical portion 11, and a heat sink 13. The holder 10 also has a lid portion 14 that sandwiches and fixes the wafer 1 and the heat sink 13 between itself and the cylindrical portion 11, and a shaft portion 15 fixed to the center of the lid portion 14.

[0073] The cylindrical portion 11 has a cylindrical body 11a and a bottom portion 11b provided on the lower side of the cylindrical body 11a. The cylindrical body 11a is cylindrical in shape and is capable of housing the wafer 1 and the heat sink 13 inside.

[0074] A fitting groove 11c for fitting the wafer 1 is formed in the bottom 11b of the cylindrical portion 11, and an exposure opening 11d for exposing the wafer 1 from below is provided at a position below the fitting groove 11c.

[0075] The fitting groove 11c has a shape similar to the outer shape (XY direction) of the wafer 1 (circular with a partially linear shape) and is slightly larger than the wafer 1. The exposure opening 11d has a shape similar to the outer shape (XY direction) of the wafer 1 (circular with a partially linear shape) and is slightly smaller than the wafer 1.

[0076] Three locking parts 3 are provided on the upper side of the cylindrical body 11a at predetermined intervals in the circumferential direction. Each of the three locking parts 3 is configured in an L-shape and is capable of locking onto three projections 14a provided on the lid 14.

[0077] The locking portion 3 includes a first locking portion 3a, a second locking portion 3b, and a third locking portion 3c. The first locking portion 3a and the second locking portion 3b are provided on the side corresponding to the orientation flat, and the third locking portion is provided on the side opposite to the orientation flat.

[0078] In this embodiment, the circumferential distance between the first locking portion 3a and the second locking portion 3b is 110°. The circumferential distance between the second locking portion 3b and the third locking portion 3c is 125°, and the circumferential distance between the third locking portion 3c and the first locking portion 3a is 125°.

[0079] In other words, in this embodiment, at least one of the circumferential spacings between the multiple locking portions 3 is different from the other spacings. This allows the wafer 1 to always be set in the same orientation when it is placed in the holder (for example, the wafer 1 can be set at a rotation angle of 0° at the origin position). It is also possible to make all the circumferential spacings between the multiple locking portions 3 the same (equal spacing) (similarly for the projection 14a).

[0080] In this example, we have described the case where there are three locking parts 3, but the number of locking parts 3 is not limited to this and can be changed as appropriate (the same applies to projection 14a).

[0081] The flange portion 12 is annular in shape and has a larger outer diameter than the cylindrical portion 11. The flange portion 12 is provided with a hole 2 that penetrates vertically. This hole 2 is a mark used as a reference for determining the rotation angle of the holder 10 and the wafer 1.

[0082] The hole 2 is positioned on a straight line that passes through the center of the rotation axis 21 (the center of the holder 10 and the wafer 1) and also through the center of the straight line formed by the orientation flat of the wafer 1. The hole 2 is located off-center from the rotation axis 21 of the imaging target holder 10a and rotates around the rotation axis 21 in accordance with the rotation and revolution of the imaging target holder 10a.

[0083] In the example shown in the figure, the shape of the hole 2 is circular, but this shape can be changed as appropriate. Other possible shapes for the hole 2 include ellipses, polygons (triangle, square, star), cross marks, plus marks, etc. Typically, no structure that reflects light is placed directly above the hole 2. In other words, the rotating body 24 on the back side is visible through the hole 2. This allows for increased contrast between the hole 2 and other parts in the image captured by the imaging unit 43.

[0084] The heat sink 13 is positioned above the wafer 1 and dissipates heat generated by the wafer 1 during deposition. The heat sink 13 may be omitted.

[0085] The lid portion 14 is disc-shaped, and its outer diameter is slightly smaller than the inner diameter of the cylindrical portion 11. Three protrusions 14a are provided on the outer circumferential surface of the lid portion 14, projecting radially outward from the outer circumferential surface. The three protrusions 14a are formed at predetermined intervals along the circumferential direction (the same intervals as the three locking portions 3: 110°, 125°, 125°). The three protrusions 14a are fitted onto the three L-shaped locking portions 3 from above, and then rotated around their axis to be locked by the three locking portions 3.

[0086] The shaft portion 15 is fixed to the center of the cover portion 14 on the upper side of the cover portion 14. The shaft portion 15 is a component that constitutes the lower part of the rotation axis 21. The shaft portion 15 has a fitting portion 15a on its upper side. The fitting portion 15a is configured to fit with a component (not shown) that constitutes the upper part of the rotation axis 21. When the fitting portion 15a is fitted, the shaft portion 15, which is a component that constitutes the lower part of the rotation axis 21, and the component that constitutes the upper part of the rotation axis 21 are fitted together, thereby forming an integrated rotation axis 21.

[0087] Here, the difference between the imaging target holder 10a and the other holders 10 is that the holders 10 other than the imaging target holder 10a are not provided with the flange portion 12 and the hole portion 2. However, the flange portion 12 and the hole portion 2 may be provided for all holders 10.

[0088] Figure 6 shows another example of the imaging target holder 10a. In the example shown in Figure 6, the flange portion 12 is omitted. Also, in the example shown in Figure 6, the hole portion 2 is provided so as to penetrate the bottom portion 11b of the cylindrical portion 11 in the vertical direction.

[0089] The hole 2 is positioned on a straight line that passes through the center of the rotation axis 21 (the center of the holder 10 and the wafer 1) and the center of the straight line formed by the orientation flat of the wafer 1, similar to the examples shown in Figures 4 and 5. Furthermore, the hole 2 is located off-center from the rotation axis 21 of the imaging target holder 10a and rotates around the rotation axis 21 in accordance with the revolution and rotation of the imaging target holder 10a.

[0090] Furthermore, for example, in the examples shown in Figures 4 and 5, the thickness (radially) of the cylindrical body 11a of the cylindrical portion 11 may be increased so that the outer diameter of the cylindrical body 11a extends to the position of the outer diameter of the flange portion 12 (in this case, the flange portion 12 is omitted). In this case, a hole portion 2 may be provided in the cylindrical body 11a.

[0091] Referring again to Figure 1, inside the vacuum chamber 20, a crucible 31 for storing the deposition material as a deposition source is positioned at its lower side. The crucible 31 is positioned directly below the orbital axis 23. The crucible 31 may be of a type in which multiple crucibles 31 can be switched by a revolving bar. In this case, for example, when the amount of deposition material in the crucible 31 becomes low or when switching to a different deposition material, the crucible 31 is switched by the revolving bar.

[0092] The electron beam device 32 is positioned near the crucible 31. The electron beam device 32 heats the deposition material in the crucible 31 by irradiating it with an electron beam, causing the deposition material to evaporate.

[0093] The electron beam apparatus 32 is electrically connected to the power supply 63 via a cable 64. The cable 64 is inserted into and out of the vacuum chamber 20 via a current introducer 65. The current introducer 65 is capable of maintaining airtightness inside the vacuum chamber 20 while allowing the cable 64 to be inserted into and out of the vacuum chamber 20. The power supply 63 is electrically connected to the control device 46, and the control device 46 commands the electron beam apparatus 32 to emit an electron beam.

[0094] In the example shown in the figure, an electron beam method is used for deposition, but the deposition method may also be a resistance heating method, a high-frequency induction method, a laser method, or a switching method using two or more methods, and the method is not particularly limited.

[0095] The partition wall 33 is provided to cover the crucible 31 and the electron beam apparatus 32, dividing the space inside the vacuum chamber 20 into an upper first space (wafer 1 side) and a lower second space (deposition source side).

[0096] In the partition wall 33, an anti-deposition plate 54 is provided at its upper part, corresponding to the first window portion 47. The anti-deposition plate 54 is interposed between the first window portion 47 and the deposition source of the deposited material inside the vacuum chamber 20. The anti-deposition plate 54 is a flat plate-shaped member made of a material such as resin or metal, and prevents the deposited material from adhering to and accumulating on the first window portion 47. The anti-deposition plate 54 is positioned at a predetermined angle of inclination with respect to the vertical direction (Z-axis direction).

[0097] Furthermore, an anti-deposition plate may be provided at a position corresponding to the second window portion 48 to prevent the deposition material from adhering to and accumulating on the second window portion 48. This anti-deposition plate is interposed inside the vacuum chamber between the second window portion 48 and the deposition source of the deposition material.

[0098] Furthermore, an opening is provided in the partition wall 33 at a position corresponding to the crucible 31. The deposition source shutter 34 is capable of switching the open and closed state of the opening in the partition wall 33. Immediately after the start of heating of the deposition material, the deposition source shutter 34 keeps the opening closed, and opens the opening to start deposition on the wafer 1 when the evaporation of the deposition material has stabilized.

[0099] The evaporation source shutter 34 is fixed to the drive shaft 67 of an actuator 66, such as a motor. The drive shaft 67 is rotatably supported at the bottom of the vacuum chamber 20 via a rotary inlet 68. The rotary inlet 68 is made of a ferro seal or the like, and is capable of maintaining airtightness inside the vacuum chamber 20 while rotatably supporting the drive shaft 67.

[0100] The actuator 68 is electrically connected to the control device 46, and the control device 46 commands the drive shaft 67 to drive the evaporation source shutter 34, thereby switching the open / closed state of the opening in the partition wall 33.

[0101] The vacuum pump 41 is connected to the inside of the vacuum chamber 20 via an exhaust pipe 42, enabling it to evacuate the inside of the vacuum chamber 20. The vacuum pump 41 is electrically connected to a control device 46, and evacuates the vacuum chamber 20 in accordance with commands from the control device 46.

[0102] The display unit 45 is configured, for example, as a liquid crystal display, and displays images (including still images and videos) captured by the imaging unit 43 in accordance with commands from the control unit (image processing unit). The display unit 45 is fixed, for example, outside the side wall of the vacuum chamber 20 in a position easily visible to the user.

[0103] The imaging unit 43 images at least one of the multiple holders 10 (and multiple wafers 1) through the first window 47 in response to a command from the control unit (image processing unit). In this embodiment, the imaging unit 43 is configured to image one of the multiple holders 10 (wafer 1). In Figures 2 and 3, the holder 10a to be imaged is highlighted with a black circle.

[0104] The light-receiving axis of the imaging unit 43 is, for example, set to approximately 30° to 60° with respect to the vertical direction (Z-axis direction). Details of the configuration of the imaging unit 43 will be described later with reference to Figures 8 to 10, etc.

[0105] During imaging by the imaging unit 43, the illumination unit 44 irradiates light onto the imaging target holder 10a (and wafer 1) through the second window unit 48 in accordance with a command from the control unit (image processing unit). The projection axis of the illumination unit 44 is, for example, approximately 45° to 90° with respect to the vertical direction (Z-axis direction).

[0106] In the example shown in Figure 1, the light projection axis of the illumination unit 44 is positioned above (towards the wafer 1) the light receiving axis of the imaging unit 43, but the light receiving axis may also be positioned above (towards the wafer 1) the light projection axis. In other words, the imaging unit 43 may be positioned above the illumination unit 44.

[0107] Furthermore, in the example shown in Figure 1, the light-receiving axis of the imaging unit 43 is different from the light-emitting axis of the illumination unit 44, but the light-receiving axis and the light-emitting axis may coincide. In other words, the imaging unit 43 and the illumination unit 44 may be arranged in the same position. If the imaging unit 43 and the illumination unit 44 are arranged in the same position, the second window 48 and the second shutter 55 (and the corresponding anti-attachment plate) may be omitted.

[0108] The lighting unit 44 may be omitted (for example, if sufficient light is taken in from the windows 47 and 48 provided in the vacuum chamber 20, or from other windows (such as windows for the user to see inside)). If the lighting unit 44 is omitted, the second window 48 and the second shutter 55 (and the corresponding anti-attachment plate) may also be omitted.

[0109] The above describes the case where the amount of light in the visible light region is sufficient to obtain an image of sufficient accuracy in the imaging unit 43. On the other hand, the illumination unit 44 can be omitted when an imaging unit 43 with sensitivity in other wavelength regions, particularly the infrared region, is used. During film formation, a temperature difference occurs between the surface of the hole 2 and the area above it, which increases the contrast in the infrared image, making it easy to detect the position of the hole 2. Therefore, such a method using infrared imaging is preferable from the viewpoint of detecting the position of the hole 2 during film formation when the above temperature difference occurs.

[0110] The first window section 47 and the second window section 48 are transparent members made of glass, acrylic resin, or the like, and constitute part of the side wall of the vacuum chamber 20.

[0111] The first shutter 53 switches between a shielded state that covers the first window 47 and an exposed state that exposes the first window 47 inside the vacuum chamber 20. The second shutter 55 switches between a shielded state that covers the second window 48 and an exposed state that exposes the second window 48 inside the vacuum chamber 20. The first window 47 and the second window 48 are exposed when imaging is performed by the imaging unit 43, and are shielded at all other times.

[0112] Figure 7 shows the first shutter 53 and the second shutter 55 as viewed from the front. The upper part of Figure 7 shows the state in which the window portions 47 and 48 are shielded by the first shutter 53 and the second shutter 55, while the lower part of Figure 7 shows the state in which the window portions 47 and 48 are exposed by the first shutter 53 and the second shutter 55.

[0113] As shown in Figure 7, the first shutter 53 is made larger than the first window section 47 so that it can shield the first window section 47. Similarly, the second shutter 55 is made larger than the second window section 48 so that it can shield the second window section 48.

[0114] In the example shown in Figure 7, the shapes of the first window section 47 and the second window section 48, as well as the shapes of the first shutter 53 and the second shutter 55, are circular. However, these shapes may also be rectangular or other shapes, and are not particularly limited.

[0115] The first shutter 53 has a portion of its outer circumference fixed to the drive shaft 57, and the second shutter 55 also has a portion of its outer circumference fixed to the drive shaft 57. The first shutter 53 and the second shutter 55 are located on opposite sides of the drive shaft 57 and rotate integrally with the drive shaft 57 as the axis of rotation.

[0116] The drive shaft 57 is an axis perpendicular to the planes of the first window portion 47 and the second window portion 48. The drive shaft 57 is driven by an actuator 56 such as a motor (see Figure 1). The drive shaft 57 is rotatably supported on the side wall of the vacuum chamber 20 via a rotary inlet 58. The rotary inlet 58 is made of a ferro seal or the like, and is capable of maintaining airtightness inside the vacuum chamber 20 while rotatably supporting the drive shaft 57.

[0117] The actuator 56 is electrically connected to the control device 46, and drives the drive shaft 57 according to a command from the control device 46, thereby driving the first shutter 53 and the second shutter 55, and switching between the shielded state and the exposed state of the first window section 47 and the second window section 48.

[0118] The control device 46 may be a device specifically designed for the vacuum deposition apparatus 100, or it may be a general-purpose device such as a PC (Personal Computer). The control device 46 includes a control unit, a memory unit, an operation unit, a communication unit, and the like.

[0119] The control unit performs various calculations based on the various programs stored in the memory unit and comprehensively controls each part of the vacuum deposition apparatus 100.

[0120] The control unit is implemented by hardware, or a combination of hardware and software. The hardware constitutes part or all of the control unit, and examples of this hardware include a CPU (Central Processing Unit), DSP (Digital Signal Processor), GPU (Graphics Processing Unit), VPU (Vision Processing Unit), FPGA (Field Programmable Gate Array), PLC (Programmable Logic Controller), ASIC (Application Specific Integrated Circuit), or a combination of two or more of these.

[0121] The control unit includes an image processing unit. The image processing unit performs processing related to imaging by the imaging unit, image processing of the captured images, and processing related to the display of images by the display unit. The image processing unit may be provided separately outside the control device 46.

[0122] The memory unit includes a non-volatile memory that stores various programs and data necessary for the control unit's processing, and a volatile memory used as the control unit's workspace.

[0123] The above-mentioned programs may be read from portable recording media such as optical discs or semiconductor memory, or downloaded from a server device on a network.

[0124] The control unit receives various user operations as input and outputs them to the control unit. The communication unit is configured to communicate with other devices, such as server devices on a network.

[0125] <Basic Concept of This Technology> Here, let me briefly explain the basic concept of this technology. As will be described later, in this embodiment, a dynamic deposition mode is used, in which deposition is performed on wafer 1 while wafer 1 is rotating or revolving, and a static deposition mode is used, in which deposition is performed on wafer 1 while wafer 1 is stationary.

[0126] Thus, in this embodiment, since a single vacuum deposition apparatus 100 can switch between dynamic deposition mode and static deposition mode, costs can be reduced compared to, for example, a case where dynamic deposition and static deposition are performed using separate apparatuses.

[0127] In dynamic deposition mode, deposition is performed while wafer 1 is rotated or orbiting, allowing for uniform deposition of the material onto the surface of wafer 1. On the other hand, in static deposition mode, deposition is performed with wafer 1 stationary, allowing the material to be deposited onto protrusions or grooves (or both) extending in a specific angular direction on the surface of wafer 1. In particular, this technology is effective as a method for forming films on the vertical (side) surfaces of protrusions extending in a certain angular direction; therefore, in the following explanation, the target of film formation in static deposition mode will be described as the side surfaces of the protrusions.

[0128] In dynamic deposition mode, the rotation speed and revolution speed of wafer 1 need to be precisely controlled, but the current rotation angle of wafer 1 does not need to be precisely controlled. On the other hand, in static deposition mode, the current rotation angle of wafer 1 needs to be precisely controlled.

[0129] This is because the rotation angle of wafer 1 for depositing material onto the sides of the protrusions on the surface of wafer 1 is determined to some extent by the direction in which the sides of those protrusions run. In other words, if the rotation angle of wafer 1 is set to an inaccurate angle, it will not be possible to deposit material onto the sides of the target protrusions.

[0130] The rotation angle of wafer 1 can be controlled solely based on pulse control of the motor that rotates the orbital axis 23, or on information from a rotation angle detector attached to that motor. However, in this case, the rotation angle of wafer 1 tends to be inaccurate.

[0131] Therefore, in this embodiment, in static deposition mode, the imaging target holder 10a and wafer 1 are imaged by the imaging unit 43, and the control unit (image processing unit) determines whether the current rotation angle is the target rotation angle based on the captured image. As a result, the rotation angle of wafer 1 can be accurately controlled in static deposition mode, and the material can be appropriately deposited on the sides of the protrusions provided on the surface of wafer 1.

[0132] In this embodiment, imaging by the imaging unit 43 and determination of the rotation angle of the wafer 1 by the control unit (image processing unit) are performed in static deposition mode. However, imaging by the imaging unit 43 and determination of the rotation angle of the wafer 1 by the control unit (image processing unit) may also be performed in dynamic deposition mode.

[0133] <Angle of view by the imaging unit 43> Next, the conditions for the field of view by the imaging unit 43 will be explained. Figure 8 is a diagram illustrating the field of view by the imaging unit 43, and shows the movement of the target holder 10a and wafer 1 on the image captured by the imaging unit 43.

[0134] In Figure 8, the dotted rectangle indicates the field of view taken by the imaging unit 43. The dashed line indicates the orbital paths of the image-captured holder 10a and wafer 1 within the image taken by the imaging unit 43 (the orbital paths of the holder 10 and wafer 1 as seen from the imaging unit 43).

[0135] Furthermore, in Figure 8, the two dotted curves indicate the perturbation range of the image-captured holder 10a and wafer 1 within the image captured by the imaging unit 43 (the apparent perturbation range of the holder 10 and wafer 1 from the perspective of the imaging unit 43). Perturbation will be explained later.

[0136] Figure 8 shows the movement of the image target holder 10a and wafer 1 within the image captured by the imaging unit 43 (the apparent movement of the holder 10 from the imaging unit 43) when the image target holder 10a and wafer 1 rotate at an angle of 0° to 360° (see the black circle in Figure 3).

[0137] First, let's explain the lateral field of view of the imaging unit 43. The lateral field of view provided by the imaging unit 43 corresponds to the orbital direction of the holder 10 and the wafer 1.

[0138] The lateral field of view of the imaging unit 43 includes at least the range in which the holder 10 and wafer 1 move in the orbital direction when the holder 10 and wafer 1 rotate 360°.

[0139] For example, in the horizontal field of view of the imaging unit 43, the right boundary line is set so that the entire lower surface (including the hole 2) of the imaging target holder 10a and the entire surface of the wafer 1 can be imaged when the rotation angle is 0°. Also, in the horizontal field of view of the imaging unit 43, the left boundary line is set so that the entire lower surface (including the hole 2) of the imaging target holder 10a and the entire surface of the wafer 1 can be imaged when the rotation angle is 360°.

[0140] Next, the vertical field of view of the imaging unit 43 will be described. The vertical field of view of the imaging unit 43 corresponds to the perturbation direction of the holder 10 and the wafer 1.

[0141] Here, perturbation means that the orbits of the holder 10 and wafer 1 are shifted in the direction of the perturbation (radial direction), causing the holder 10 and wafer 1 to shift in the direction of the perturbation. Furthermore, the perturbation range means the range in which the holder 10 and wafer 1 are perturbed in the direction of the perturbation (radial direction).

[0142] As described above, the holder 10 and wafer 1 are rotated by the incident angle adjustment mechanism 25 to adjust their incident angle. At this time, the holder 10 and wafer 1 are perturbed in the perturbation direction.

[0143] The vertical field of view of the imaging unit 43 includes at least the perturbation range when the holder 10 and wafer 1 are perturbed in the perturbation direction due to the rotation of the holder 10 and wafer 1 by adjusting the incident angle.

[0144] For example, in the vertical field of view of the imaging unit 43, the upper boundary line is set so that when the imaging target holder 10a and wafer 1 are perturbed to their innermost position in the perturbation direction, the entire lower surface of the imaging target holder 10a (including the hole 2) and the entire surface of the wafer 1 can be imaged. Also, in the vertical field of view of the imaging unit 43, the lower boundary line is set so that when the imaging target holder 10a and wafer 1 are perturbed to their outermost position in the perturbation direction, the entire lower surface of the imaging target holder 10a (including the hole 2) and the entire surface of the wafer 1 can be imaged.

[0145] Furthermore, when the holder 10 and wafer 1 are perturbed by the rotation of the holder 10 and wafer 1 due to the adjustment of the incident angle, the apparent area of ​​the lower surface of the image-captured holder 10a and the surface of the wafer 1 changes within the image captured by the imaging unit 43.

[0146] In other words, the apparent area of ​​the lower surface of the imaging target holder 10a and the surface of the wafer 1 increases as they become closer to being perpendicular to the light-receiving axis of the imaging unit 43. Conversely, this apparent area decreases as they move further away from being perpendicular to the light-receiving axis of the imaging unit 43. Therefore, this point may also be taken into consideration when setting the vertical field of view of the imaging unit 43.

[0147] Figure 9 is a diagram showing the relationship between the field of view of the imaging unit 43 and the first shutter 53 and the second shutter 55. As shown in Figure 9, the positions of the first shutter 53 and the second shutter 55 are set so that they are located outside the lateral field of view of the imaging unit 43 when the first window section 47 and the second window section 48 are exposed.

[0148] Figure 10 shows the relationship between the field of view of the imaging unit 43 and the protective plate 54. As shown in Figure 10, the protective plate 54 is positioned so as to be outside the vertical field of view of the imaging unit 43 (the same applies to protective plates corresponding to the second window 48 if they are provided).

[0149] <Operation Description> Next, the processing of the control unit in the control device 46 will be described. Figure 11 is a flowchart showing the processing of the control unit in the control device 46.

[0150] In the flowchart in Figure 11, the initial internal state of the vacuum chamber 20 at START is assumed to be that the vacuum pump 41 is operating based on the command of the control device 46, and a vacuum suitable for deposition has been achieved. On the other hand, based on the deposition sequence described below, a step to achieve a vacuum suitable for deposition may be inserted at any point in the pre-deposition steps, including the step of opening to the atmosphere.

[0151] First, the control unit determines, based on the deposition sequence, whether the next deposition mode is a dynamic deposition mode or a static deposition mode (step 101).

[0152] In a vapor deposition sequence, the order of dynamic and static vapor deposition modes is predetermined. For example, the order of vapor deposition modes in a vapor deposition sequence may be planned as follows: dynamic vapor deposition mode → static vapor deposition mode, static vapor deposition mode → dynamic vapor deposition mode, or a sequence in which dynamic and static vapor deposition modes alternate.

[0153] Here, the deposition sequence is obtained, for example, by reading in advance from a memory unit (not shown) within the control unit the specific operation sequence required to achieve film formation (adhesion or deposition) on the wafer 1, which is the object to be deposited.

[0154] In the deposition sequence, the dynamic deposition mode is associated with information such as the rotational and orbital velocity, the angle of incidence, and the type of material to be deposited (selection of the crucible 31 by the revolver). Similarly, in the deposition sequence, the static deposition mode is associated with information such as the rotational angle, the angle of incidence, and the type of material to be deposited.

[0155] In this embodiment, if any of the incident angle or the type of deposited material differs in the dynamic deposition mode, these will be considered different dynamic deposition modes. Similarly, if any one of the rotation angle, incident angle, or type of deposited material differs in the static deposition mode, these will be considered different static deposition modes.

[0156] Therefore, in this embodiment, in the deposition sequence, there may be a series of dynamic deposition modes, such as dynamic deposition mode → dynamic deposition mode (when the incident angle and type of deposited material are different). Also, there may be a series of static deposition modes, such as static deposition mode → static deposition mode (when the rotation angle, incident angle, and type of deposited material are different).

[0157] When the next deposition mode is determined, the control unit determines whether that deposition mode is a static deposition mode (step 102). If the next deposition mode is not a static deposition mode (NO in step 102), that is, if the next deposition mode is a dynamic deposition mode, the control unit starts the dynamic deposition mode (step 122).

[0158] When the dynamic deposition mode is started, the control unit determines whether it is necessary to change the incident angle on the wafer 1 for deposition (step 123).

[0159] If it is necessary to change the incidence angle (YES in step 123), the control unit drives the incidence angle adjustment mechanism 25 to rotate each holder 10 and each wafer 1 to change the incidence angle (step 124). Then the control unit proceeds to the next step 125.

[0160] On the other hand, if there is no need to change the incident angle (NO in step 123), the control unit skips step 124 (without changing the incident angle) and proceeds to the next step 125.

[0161] In step 125, the control unit determines whether it is necessary to change the type of deposited material. If it is necessary to change the type of deposited material (YES in step 125), the control unit changes the type of deposited material by driving the revolver (not shown) to change the crucible 31 (step 126). Then, the control unit proceeds to the next step 127.

[0162] On the other hand, if there is no need to change the type of deposited material (NO in step 125), the control unit skips step 126 (without changing the type of deposited material) and proceeds to the next step 127.

[0163] In step 127, the control unit rotates each holder 10 and each wafer 1 on its own axis and on its own axis while depositing a material onto the surface of the wafer 1. Next, the control unit determines whether the dynamic deposition is complete (step 128).

[0164] If dynamic deposition is not complete (NO in step 128), the control unit returns to step 127 and continues to perform dynamic deposition. If dynamic deposition is complete (YES in step 128), the control unit determines whether all deposition modes included in the deposition sequence have been completed (step 129).

[0165] If there are still incomplete deposition modes among all the deposition modes included in the deposition sequence (NO in step 129), the control unit returns to step 101 and determines the next deposition mode from the deposition sequence. On the other hand, if all deposition modes included in the deposition sequence have been completed (YES in step 129), the control unit terminates the process.

[0166] In step 102, if the next deposition mode is static deposition mode (YES in step 102), the control unit starts the static deposition mode (step 103). Once the static deposition mode is started, the control unit determines whether it is necessary to change the incident angle on the wafer 1 for deposition (step 104).

[0167] If it is necessary to change the incidence angle (YES in step 104), the control unit drives the incidence angle adjustment mechanism 25 to rotate each holder 10 and each wafer 1 to change the incidence angle (step 105). Then the control unit proceeds to the next step 106.

[0168] On the other hand, if there is no need to change the incident angle (NO in step 104), the control unit skips step 105 (without changing the incident angle) and proceeds to the next step 106.

[0169] In step 106, the control unit determines whether it is necessary to change the type of deposited material. If it is necessary to change the type of deposited material (YES in step 106), the control unit changes the type of deposited material by driving the revolver (not shown) to change the crucible 31 (step 107). Then, the control unit proceeds to the next step 108.

[0170] On the other hand, if there is no need to change the type of deposited material (NO in step 106), the control unit skips step 107 (without changing the type of deposited material) and proceeds to the next step 108.

[0171] In step 108, the control unit determines whether the previous deposition mode was static deposition mode. If the previous deposition mode was static deposition mode (YES in step 108), the control unit determines whether the rotation angle of each holder 10 and each wafer 1 is the same as the rotation angle in the previous static deposition mode (step 109).

[0172] If the rotation angle of each holder 10 and each wafer 1 is the same as the rotation angle in the previous static deposition mode (YES in step 109) (for example, when deposition is performed on the side surface of a protrusion that runs in the same direction as in the previous static deposition mode), the control unit skips steps 110 to 115 (without performing processes such as changing the rotation angle or confirming the rotation angle by imaging) and proceeds to step 116.

[0173] In step 108, if the previous deposition mode was dynamic deposition mode (NO in step 108), the control unit skips step 109 and proceeds to the next step 110. Also, in step 109, if the previous deposition mode was static deposition mode, but the current rotation angle is different from the previous rotation angle (NO in step 109) (for example, when deposition is performed on the side of a protrusion that moves in a different direction than the previous static deposition mode), the control unit proceeds to the next step 110.

[0174] In step 110, the control unit drives the orbital axis 23 with the motor 61 to move each holder 10 and each wafer 1 to the origin position.

[0175] As mentioned above, the origin position is the position in a coordinate system based on the vacuum chamber 20 where the reference holder 10 (the holder 10 at the 12 o'clock position in the upper part of Figures 2 and 3A) has an orbital angle of 0° and a rotational angle of 0°, and the imaging target holder 10a has an orbital angle of 60° and a rotational angle of 0° (see the upper part of Figures 2 and 3A).

[0176] After moving each holder 10 and each wafer 1 to the origin position, the control unit then rotates the orbital axis 23 with the motor 61 to move each holder 10 and each wafer 1 to a position with a target rotation angle (step 111). If the target rotation angle matches the rotation angle at the origin position (i.e., rotation angle 0°), the control unit omits the process in step 111. Next, the control unit (image processing unit) causes the imaging unit 43 to image the target holder 10a and wafer 1 (step 112).

[0177] Next, the control unit (image processing unit) performs a correction process to correct the images of the image target holder 10a and wafer 1 that were actually captured, so that the lower surface of the image target holder 10a and the surface of the wafer 1 appear as if they were viewed from the front (step 113).

[0178] Figure 12 is a diagram illustrating the correction process. In Figure 12, the upper diagram shows the image before the correction process, and the lower diagram shows the image after the correction process.

[0179] Referring to the upper diagram in Figure 12, the projection axis of the imaging unit 43 is not perpendicular to the lower surface of the imaging target holder 10a and the surface of the wafer 1. Therefore, in the image, the lower surface of the imaging target holder 10a and the surface of the wafer 1 appear elliptical. On the other hand, referring to the lower diagram in Figure 12, when the image is corrected, the lower surface of the imaging target holder 10a and the surface of the wafer 1 become circular in the image, correcting them to appear as if viewed from the front.

[0180] Here, we will explain the pre-settings for the correction process in step 113. The control unit (image processing unit) has pre-set how to correct the actually captured image so that it can be corrected to look like a front view image, storing this information for each rotation angle and incidence angle of the holder 10 and wafer 1.

[0181] Figure 13 shows an example of a method for pre-setting and storing correction processing. Referring to the top of Figure 13, with a chessboard pattern board attached to the lower surface of the imaging target holder 10a, the imaging target holder 10a is set to a certain rotation angle and a certain incidence angle.

[0182] The rotation angle patterns of the imaging target holder 10a at this time are, for example, 0°, 30°, 60°, 90°, 120°, 150°, 180°, 210°, 240°, 270°, 300°, and 330°, which is 12 patterns. Also, the incidence angle patterns of the imaging target holder 10a at this time are, for example, 60°, 70°, 80°, and 90°, which is 4 patterns. In this case, the total number of patterns is 12 × 4 = 48 patterns.

[0183] In each of these 48 patterns, the imaging unit 43 captures an image similar to the upper diagram in Figure 13. Subsequently, as shown in the center diagram in Figure 13, the white squares of the chessboard are detected, and a correction process is performed so that the spacing between the white squares becomes uniform, resulting in an image similar to a front view of the bottom surface of the imaging target holder 10a, as shown in the lower diagram in Figure 13. This correction process is performed for each of the 48 patterns, and the images are stored in association with each of the 48 patterns.

[0184] Returning to the explanation of the steps in Figure 11, after the correction process is performed, the control unit (image processing unit) then determines the rotation angles of the holder 10 and the wafer 1 based on the corrected image (step 114).

[0185] Figure 14 shows the corrected images when the rotation angles of the imaging target holder 10a are 0°, 30°, 60°, 90°, 120°, 150°, 180°, 210°, 240°, 270°, 300°, and 330°, respectively.

[0186] In step 114, the control unit (image processing unit) detects the center positions of the image capture target holder 10a and wafer 1, and the position of the hole 2 in the image after correction processing, and determines the rotation angle of the holder 10 and wafer 1 based on these positions.

[0187] Figure 15 shows the process for determining the rotation angle of the holder 10 and the wafer 1. First, the control unit (image processing unit) detects the outline of the image target holder 10a and detects the center position (center position of the rotation axis) of the image target holder 10a and the wafer 1 from the outline of the image target holder 10a.

[0188] Next, the control unit (image processing unit) detects the position of the hole 2. Then, the control unit (image processing unit) determines the direction of a straight line that is perpendicular to the straight line connecting the center position of the imaging target holder 10a and the wafer 1 (center position of the rotation axis) and the position of the hole 2, and that passes through the center position of the imaging target holder 10a and the wafer 1 (center position of the rotation axis).

[0189] The direction of this line is parallel to the orientation flat on wafer 1. The control unit (image processing unit) determines the rotation angles of holder 10 and wafer 1 based on the direction of this line in the image. The control unit (image processing unit) has already stored information on what rotation angles of holder 10 and wafer 1 correspond to the direction of this line in the image.

[0190] After determining the rotation angles of the holder 10 and the wafer 1, the control unit proceeds to the next step 115. In step 115, the control unit (image processing unit) determines whether the rotation angles of the holder 10 and the wafer 1 are within a predetermined range (for example, within ±10°) of the target rotation angle.

[0191] If the rotation angle of the holder 10 and the wafer 1 is not within a predetermined range (for example, within ±10°) of the target value (NO in step 115), the control unit (image processing unit) increments the error count by 1 (step 119). The control unit (image processing unit) then determines whether the error count is 2 or less (step 120).

[0192] If the number of errors is two or less (YES in step 120), the control unit (image processing unit) returns to step 110 and executes the processes from step 110 onward again. On the other hand, if the number of errors is three (NO in step 120), the control unit (image processing unit) displays a warning about the error on the screen of the display unit 45 (step 121) and terminates the process.

[0193] In this explanation, we describe the case where, in the event of an error, each holder 10 and each wafer 1 are returned to their origin positions, and then moved again to the position corresponding to the target rotation angle.

[0194] On the other hand, in step 114, the control unit (image processing unit) recognizes the rotation angle of each holder 10 and each wafer 1. Therefore, the control unit (image processing unit) can determine how many degrees the current rotation angle is short of or over the predetermined range (±10°). Accordingly, when an error occurs, the control unit (image processing unit) may, based on this determination, rotate each holder 10 and each wafer 1 by the difference to bring the rotation angle within the predetermined range.

[0195] In step 115, if the rotation angles of the holder 10 and the wafer 1 are within a predetermined range relative to the target value (YES in step 115), the control unit proceeds to step 116. In step 116, the control unit performs deposition with each holder 10 and each wafer 1 stationary, depositing the material onto the side surfaces of the protrusions provided on the wafer 1.

[0196] Next, the control unit determines whether the static deposition is complete (deposition on the side surface of the target protrusion is complete) (step 117). If the static deposition is not complete (deposition on the side surface of the target protrusion is not complete) (NO in step 117), the control unit returns to step 116 and continues to perform the static deposition.

[0197] On the other hand, when static deposition is completed (deposition on the side of the target protrusion is completed) (YES in step 117), the control unit determines whether all deposition modes included in the deposition sequence have been completed (step 118).

[0198] If there are still incomplete deposition modes among all the deposition modes included in the deposition sequence (NO in step 118), the control unit returns to step 101 and determines the next deposition mode from the deposition sequence. On the other hand, if all deposition modes included in the deposition sequence have been completed (YES in step 118), the control unit terminates the process.

[0199] In the example shown in Figure 11, if the previous deposition mode was a static deposition mode and the current deposition mode is also a static deposition mode (YES in step 108), and if it is necessary to change the rotation angle (NO in step 109), then each holder 10 and each wafer 1 are returned to their origin positions (step 110), and then each holder 10 and each wafer 1 are moved again to the position of the target rotation angle (step 111).

[0200] On the other hand, in step 114, the control unit (image processing unit) recognizes the rotation angle of each holder 10 and each wafer 1 in the previous static deposition mode. Therefore, the control unit (image processing unit) can determine how much rotation is required to move each holder 10 and each wafer 1 from their current rotation angles to the position of the rotation angle in the current static deposition mode. Accordingly, when changing the rotation angle, the control unit (image processing unit) can omit the process of returning to the origin position and rotate the holder 10 and wafer 1 by the difference to change the current rotation angle to the desired rotation angle.

[0201] Furthermore, when it is necessary to change the rotation angle, performing a process to return to the origin position once is preferable because it reduces the effects of dead zones such as backlash and hysteresis (nonlinear parts) in the rotation transmission mechanism from the motor 61 to the rotation axis 21 (reduces the number of errors).

[0202] <User visual inspection mark 4> Next, we will explain the mark 4 for visual inspection by the user. In Figure 14 above, for example, refer to the figure where the rotation angle of the holder 10 and wafer 1 is 0°. Suppose an image of a rotation angle of 0° is displayed on the display unit 45, and the user visually inspects that image. However, even if the user looks at this image, it is difficult for them to intuitively determine that the rotation angle of the holder 10 and wafer 1 is 0°.

[0203] Therefore, a visual mark 4 may be provided so that the user can intuitively recognize the rotation angle of the holder 10 and the wafer 1.

[0204] Figure 16 is a schematic diagram of the upper part of the vacuum deposition apparatus 100 as seen from above, and shows the visual inspection marks 4. As shown in Figure 16, the visual inspection marks 4 include a first visual inspection mark 4a provided on the imaging target holder 10a and a second visual inspection mark 4b provided on the rotating body 24.

[0205] In Figure 16, the first visual mark 4a and the second visual mark 4b are hidden from view by the underside of the fixed gear 26, the underside of the rotating body 24, the underside of the holder 10, etc. However, to make this embodiment easier to understand, the first visual mark 4a and the second visual mark 4b are shown with solid lines in Figure 16.

[0206] The first visual mark 4a rotates around the rotation axis 21 in accordance with the revolution of the imaging target holder 10a. The second visual mark rotates around the revolution axis 23 in accordance with the rotation of the rotating body 24, and its position coincides with the first visual mark when the imaging target holder 10a reaches a predetermined rotation angle.

[0207] The first visual mark 4a is formed on the lower surface of the imaging target holder 10a. The first visual mark 4a is configured as a line extending radially from the position of the rotation axis 21. The first visual mark 4a is provided at 30° intervals around the rotation axis 21 (12 in total).

[0208] The second visual marker 4b is formed on the underside of the rotating body 24. The second visual marker 4b is arranged in a linear fashion, extending radially from the position of the orbital axis 23. The second visual marker 4b is provided at 15° intervals around the orbital axis 23, and is located at the positions of 60°, 75°, 90°, 105°, and 120° of the orbital angle at the origin (a total of 5 markers).

[0209] The second visual mark 4b coincides with the first visual mark 3a when the rotation angle of the imaging target holder 10a is 0°, 90°, 180°, 270°, or 360°. When the first and second visual marks coincide, the user can intuitively recognize that the rotation angles of the holder 10 and wafer 1 are at convenient angles such as 0°, 90°, 180°, 270°, or 360°.

[0210] The circumferential spacing and number of the first visual inspection marks 4a, and the circumferential spacing and number of the second visual inspection marks 4b, etc., are not limited to the examples given herein and can be changed as appropriate. In addition, the first visual inspection marks 4a may be provided on all holders 10, and the second visual inspection marks 4b may be provided around the entire circumference of the rotating body 24.

[0211] <Effect, etc.> As described above, the vacuum deposition apparatus 100 according to this embodiment includes a plurality of holders 10 that are each capable of holding a wafer 1 on which a deposition material is deposited and that can revolve while each rotating on an orbital axis 23, an imaging unit 43 that can image at least one of the plurality of holders 10 that hold the wafer 1, and a control unit that determines the rotation angle of the wafer 1 based on the image captured by the imaging unit 43.

[0212] This makes it possible to accurately determine the rotation angle of the wafer 1 in a vacuum deposition apparatus 100 in which the wafer 1 can rotate and revolve.

[0213] In particular, the self-rotating vacuum deposition apparatus 100 has multiple rotation transmission mechanisms from a single driving force (motor 61) to the rotation axis 21, resulting in dead zones such as backlash and hysteresis (nonlinear parts). Therefore, in pulse control of the driving force (motor 61) or position detection based solely on the rotation angle detector, the effects of backlash and hysteresis must be tolerated as errors. Note that backlash and hysteresis are provided to cope with the heat applied during deposition (if they are not present, it will lead to premature failure of the rotation transmission mechanism), so their presence is an essential configuration for the vacuum deposition apparatus 100.

[0214] In other words, the technical concept of this embodiment is more effective in static deposition, where errors such as backlash and hysteresis cannot be tolerated. Furthermore, in this embodiment, static deposition under different rotation angle conditions and dynamic deposition can also be performed together, and a vacuum deposition apparatus 100 can be provided that can continuously switch between these to perform deposition.

[0215] Furthermore, this embodiment is designed to allow switching between dynamic deposition mode and static deposition mode. This reduces costs compared to having separate devices handle the dynamic and static deposition modes.

[0216] Furthermore, in this embodiment, the rotation angle of the wafer 1 is determined and controlled in static deposition mode. This allows for appropriate deposition of material onto the side surfaces of the protrusions on the wafer 1 in static deposition mode.

[0217] Furthermore, in this embodiment, the horizontal field of view of the imaging unit 43 includes at least the range in which the imaging target holder 10a moves in the orbital direction when the imaging target holder 10a rotates once. This makes it possible to accurately determine the rotation angle of the wafer 1 and to accurately control the rotation angle.

[0218] Furthermore, in this embodiment, the vertical field of view of the imaging unit 43 includes at least the perturbation range when the imaging target holder 10a is perturbed in the perturbation direction due to the rotation of the imaging target holder 10a by adjusting the incident angle. This makes it possible to accurately determine the rotation angle of the wafer 1 and to accurately control the rotation angle.

[0219] Furthermore, as another embodiment of the incidence angle adjustment mechanism 25, if the incidence angle can be adjusted using a manual rotation and linear introduction mechanism (for example, using an incidence angle adjustment mechanism in which the incidence angle can be adjusted by turning a screw, and using a shaft fitted to the head of the screw, and using a manual manipulation mechanism that rotates and linearly introduces this shaft into the vacuum chamber 20), the incidence angle can be adjusted manually while maintaining the vacuum level inside the vacuum chamber 20. In this way, even manually, the vacuum chamber 20 can not be opened to the atmosphere, and a vacuum level suitable for deposition can be maintained (for example, the change in the incidence angle in steps 105 and 124 of Figure 11 can be done manually instead of automatically). Therefore, when performing film deposition by each step of Figure 11, the process can be shortened and production efficiency can be improved.

[0220] Furthermore, in this embodiment, the imaging target holder 10a has a mark for determining the rotation angle of the wafer 1. This allows for more accurate determination of the rotation angle of the wafer 1 and precise control of the rotation angle.

[0221] Furthermore, in this embodiment, this mark is a hole 2 that penetrates the flange portion 12. This increases the contrast between the hole 2 and the portion other than the hole 2, making it easy to detect the mark that serves as a basis for determining the rotation angle of the wafer 1.

[0222] In this embodiment, all holders 10 may be marked, and in this case, each holder may be marked with a mark of a different size and shape. This makes it possible to distinguish each holder 10. For example, the marks may be the same shape but different sizes, the same size but different shapes (e.g., circles, ellipses, polygons (△, □, ☆), × marks, + marks, etc.), or different sizes but different shapes.

[0223] By distinguishing and recognizing each holder 10 in this way, the position information of the holders located within the field of view of the imaging unit 43 can be used in the return to the origin position operation in step 104 of Figure 11. This reduces the time required for the return to the origin position operation and improves productivity. In addition, in the event of an error or other abnormality as described above, the holder 10 that caused the abnormality can be quickly identified.

[0224] Furthermore, in this embodiment, the rotation angle is determined based on the position of the mark in the image and the center position of the holder 10. This allows for more accurate determination of the rotation angle of the wafer 1 and precise control of the rotation angle.

[0225] Furthermore, in this embodiment, a correction process is performed to correct the images of the imaging target holder 10a and the wafer 1 so that they appear as if the lower surface of the imaging target holder 10a and the surface of the wafer 1 are viewed from the front. This allows for more accurate determination of the rotation angle of the wafer 1 and precise control of the rotation angle.

[0226] Furthermore, in this embodiment, a first shutter 53 and an anti-deposition plate 54 are provided at positions corresponding to the first window portion 47 in the imaging unit 43. This effectively prevents the deposition of materials onto the first window portion 47.

[0227] Furthermore, in this embodiment, an illumination unit 44 is provided that irradiates the holder 10 with light when imaging is performed by the imaging unit 43. This allows for more accurate determination of the rotation angle of the wafer 1 and precise control of the rotation angle.

[0228] Furthermore, in this embodiment, a second shutter 55 (and anti-deposition plate) is provided at a position corresponding to the second window portion 48 in the lighting unit 44. This effectively prevents the deposition of materials onto the second window portion 48.

[0229] Furthermore, in this embodiment, if a visual mark 4 is provided, the user can intuitively recognize the rotation angle of the wafer 1 by indirectly or directly visually observing the visual mark 4 via an image. [Explanation of Symbols]

[0230] 1… Wafer 2…Hole 10…Holder 20… Vacuum Chamber 31...crucible 43…Imaging Unit 44…Lighting Department 46...Control device 47...First window section 48...Second window section 53...First shutter 54…Adhesion prevention plate 55...Second shutter 100... Vacuum deposition equipment

Claims

1. Multiple holders capable of holding the objects to which the deposited material is deposited, and capable of revolving while each rotating on its own axis of revolution, An imaging unit capable of imaging at least one of the plurality of holders holding the object to be deposited, the holder having a mark for determining the rotation angle of the object to be deposited, A control unit switches between a dynamic deposition mode in which deposition is performed on the object to be deposited while it is rotating, and a static deposition mode in which deposition is performed on the object to be deposited while it is stationary. In the static deposition mode, the control unit causes the imaging unit to take an image, and determines the rotation angle of the object to be deposited based on the image taken by the imaging unit. A vacuum deposition apparatus equipped with the following features.

2. A vacuum deposition apparatus according to claim 1, The field of view of the imaging unit includes at least the range in which the holder moves in the orbital direction when the holder rotates once. Vacuum deposition apparatus.

3. A vacuum deposition apparatus according to claim 1 or 2, An incident angle adjustment mechanism that rotates the holder around an axis perpendicular to the orbital axis to adjust the incident angle of the deposited material on the material to be deposited. A vacuum deposition apparatus further equipped with the following features.

4. A vacuum deposition apparatus according to claim 3, The field of view of the imaging unit includes at least the perturbation range when the holder is perturbed in the perturbation direction due to the rotation of the holder caused by the adjustment of the incident angle. Vacuum deposition apparatus.

5. A vacuum deposition apparatus according to claim 1, The mark is located off-center from the rotation axis of the holder and rotates around the rotation axis in accordance with the rotation and revolution of the holder. Vacuum deposition apparatus.

6. A vacuum deposition apparatus according to claim 5, The holder has a flange portion, The aforementioned mark is provided on the flange portion. Vacuum deposition apparatus.

7. A vacuum deposition apparatus according to claim 6, The aforementioned mark is a hole that penetrates the flange portion. Vacuum deposition apparatus.

8. A vacuum deposition apparatus according to any one of claims 1 to 7, The control unit determines the rotation angle based on the position of the mark in the image and the center position of the holder. Vacuum deposition apparatus.

9. A vacuum deposition apparatus according to any one of claims 1 to 8, The control unit performs a correction process to correct the holder in the image so that it appears as if viewed from the front of the holder, and determines the rotation angle based on the corrected image. Vacuum deposition apparatus.

10. A vacuum deposition apparatus according to any one of claims 1 to 9, Vacuum chamber and The vacuum chamber is further provided with a first window, The imaging unit images the holder from outside the vacuum chamber through the first window. Vacuum deposition apparatus.

11. A vacuum deposition apparatus according to claim 10, A first anti-deposition part that prevents the deposited material from being deposited on the first window portion. A vacuum deposition apparatus further equipped with the following features.

12. A vacuum deposition apparatus according to claim 11, The first anti-deposition part includes a first shutter that switches between a shielded state in which the first window is shielded and an exposed state in which the first window is exposed, within the vacuum chamber. Vacuum deposition apparatus.

13. A vacuum deposition apparatus according to claim 11 or 12, The first anti-deposition portion includes an anti-deposition plate interposed between the first window portion and the deposition source of the deposited material inside the vacuum chamber. Vacuum deposition apparatus.

14. A vacuum deposition apparatus according to any one of claims 1 to 13, Illumination unit that irradiates light onto the holder when imaging is performed by the imaging unit. A vacuum deposition apparatus further equipped with the following features.

15. A vacuum deposition apparatus according to claim 14, Vacuum chamber and The vacuum chamber is further provided with a second window, The illumination unit irradiates light onto the holder from outside the vacuum chamber through the second window. Vacuum deposition apparatus.

16. A vacuum deposition apparatus according to claim 15, A second anti-deposition portion that prevents the deposited material from being deposited on the second window portion. A vacuum deposition apparatus further equipped with the following features.

17. A vacuum deposition apparatus according to claim 16, The second anti-deposition part includes a second shutter that switches between a shielded state in which the second window is shielded and an exposed state in which the second window is exposed, within the vacuum chamber. Vacuum deposition apparatus.

18. A vacuum deposition apparatus according to any one of claims 1 to 17, A rotating body that rotatably supports the axis of rotation of each of the plurality of holders and is rotatable around the axis of revolution, A first visual mark is provided on the holder, which rotates around the axis of rotation in accordance with the rotation and revolution of the holder, A second visual mark provided on the rotating body, which rotates around the orbital axis in accordance with the rotation of the rotating body, wherein the second visual mark coincides with the position of the first visual mark when the holder reaches a predetermined rotation angle. A vacuum deposition apparatus further equipped with the following features.

19. A dynamic deposition mode in which the material to be deposited is deposited on the material to be deposited while the material to be deposited on the material is rotated, and a static deposition mode in which the material to be deposited on the material is kept stationary, In a plurality of holders each capable of holding the object to be deposited and capable of revolving while each rotating on its own axis, at least one of the plurality of holders holding the object to be deposited, which has a mark for determining the rotation angle of the object to be deposited, is imaged by the imaging unit in the static deposition mode. Based on the image captured by the imaging unit, the rotation angle of the object to be coated is determined. Method for determining the rotation angle.

20. A dynamic deposition mode in which the material to be deposited is deposited on the material to be deposited while the material to be deposited on the material is rotated, and a static deposition mode in which the material to be deposited on the material is kept stationary, and the deposition is switched between these modes. In a plurality of holders each capable of holding the object to be deposited and capable of revolving while each rotating on its own axis, at least one of the plurality of holders holding the object to be deposited, which has a mark for determining the rotation angle of the object to be deposited, is imaged by the imaging unit in the static deposition mode. Based on the image captured by the imaging unit, the rotation angle of the object to be coated is determined. Based on the determined rotation angle of the object to be deposited, the material is deposited onto the object. A method for manufacturing a material to which a vapor-deposited substance has been deposited.

Images