High etching selectivity and low stress assemblable carbon hard mask

Abstract

To provide an ashable carbon hard mask (AHM) having high etching selectivity and low stress, in order to enable high aspect ratio (HAR) etching.SOLUTION: A method for accumulating a carbon ashable hard mask layer on a substrate includes: a step 610 of arranging a substrate in a treatment chamber; a step 614 of setting a chamber pressure to be within a predetermined pressure range, and setting a substrate temperature to be within a predetermined temperature range between -20°C and 200°C; a step 618 of supplying a gas mixture containing a hydrocarbon precursor and one or more other gases; and steps 622 to 632 of generating plasma by supplying RF plasma power in a first predetermined period, and accumulating a carbon ashable hard mask layer on a substrate.SELECTED DRAWING: Figure 6

Description

Technical Field

[0001] [Cross - Reference to Related Applications] This disclosure is a PCT international application of U.S. Patent Application No. 62 / 823,211, filed on Mar. 25, 2019. The entire disclosure of the above application is incorporated herein by reference.

[0002] This disclosure generally relates to substrate processing systems, and more particularly, to systems and methods for depositing an ashing - capable carbon hard mask.

Background Art

[0003] The background art described herein is for the purpose of generally presenting the content of the present disclosure. The inventions of the presently named inventors are not admitted as prior art to the present disclosure, either expressly or implicitly, to the extent that they are described in this background art section and aspects of the description that do not fall within the scope of the prior art at the time of filing.

[0004] Substrate processing systems perform processing on substrates such as semiconductor wafers. Examples of substrate processing include deposition, ashing, etching, cleaning, and / or other processes. Etching typically includes either chemical wet etching or dry etching. Dry etching may be performed using a plasma generated by inductively coupled plasma (ICP) or capacitively coupled plasma (CCP).

[0005] An ICP system generates a plasma by supplying RF plasma power to a coil disposed outside the processing chamber adjacent to a dielectric window. A processing gas mixture flowing inside the processing chamber is ignited by a magnetic field to generate a plasma.

[0006] A CCP system generates a plasma using electrodes disposed within the processing chamber. For example, one electrode is disposed on a substrate support below the substrate, and another electrode such as a showerhead is disposed above the substrate. RF plasma power is supplied across the electrodes to ignite the gas located between the electrodes. [Overview of the Initiative]

[0007] A method for depositing a carbon ashable hard mask layer on a substrate includes the steps of (a) placing the substrate in a processing chamber, (b) setting the chamber pressure within a predetermined pressure range, (c) setting the substrate temperature within a predetermined temperature range from -20°C to 200°C, (d) supplying a gas mixture containing a hydrocarbon precursor and one or more other gases, and (e) generating plasma by supplying RF plasma power for a first predetermined period to deposit a carbon ashable hard mask layer on the substrate.

[0008] In other features, the processing chamber is an inductively coupled plasma chamber. The RF plasma power in (e) is supplied at a first power level in the range of 30 W to 3000 W. The method includes the step of supplying RF bias power at a second power level in the range of greater than 0 W and up to 1000 W for a first predetermined period.

[0009] Other features of this method include (f) stopping the flow of hydrocarbon precursor after a first predetermined period, and (g) performing substrate treatment on the substrate to reduce stress. This method further includes one or more steps of depositing a carbon ashable hard mask and performing substrate treatment.

[0010] In other features, the deposition of the carbon ashable hard mask constitutes 30% to 95% of the deposition / processing period, while substrate processing constitutes 70% to 5% of the deposition / processing period. The deposition of the carbon ashable hard mask and substrate processing are repeated at frequencies ranging from 0.05 Hz to 1000 Hz.

[0011] Other features include (g) a step of (g1) supplying an inert gas mixture, (g2) supplying RF plasma power at a third power level lower than a first power level, and (g3) supplying RF bias power at a fourth power level lower than a second power level.

[0012] Other features include (g) further comprising (g4) supplying RF bias power at a fifth power level higher than the fourth power level during a third predetermined period after a second predetermined period at the fourth power level, and (g5) supplying RF bias power at a sixth power level lower than the fourth power level during a fourth predetermined period after a third predetermined period.

[0013] Other features include the process of repeating (c) through (g5) one or more times. The third power level is in the range of 0W to 500W. The fourth power level is in the range of 30W to 1000W. The fifth power level is in the range of 100W to 1500W. The sixth power level is in the range of 30W to 1000W.

[0014] Other features include a specified temperature range of 0°C to 80°C, a specified pressure range of 5mT to 450mT, and a specified pressure range of 5mT to 35mT. The processing chamber is a capacitively coupled plasma chamber.

[0015] A method for depositing a carbon ashable hard mask layer on a substrate includes: (a) placing the substrate in a processing chamber; (b) setting the chamber pressure within a predetermined pressure range; (c) setting the substrate temperature within a predetermined temperature range; (d) supplying a gas mixture containing a hydrocarbon precursor and one or more gases; (e) generating plasma by supplying RF plasma power for a first predetermined period to deposit the ashable hard mask layer; (f) stopping the flow of the hydrocarbon precursor after the first predetermined period; and (g) performing substrate processing on the substrate to reduce stress.

[0016] Other features of this method include one or more additional steps of carbon ashable hard mask deposition and substrate processing. Carbon ashable hard mask deposition is performed for 30% to 95% of the deposition / processing period, and substrate processing is performed for 70% to 5% of the deposition / processing period. Carbon ashable hard mask deposition and substrate processing are repeated at frequencies ranging from 0.05 Hz to 1000 Hz.

[0017] Other features include (g) a step of (g1) supplying an inert gas mixture, (g2) supplying RF plasma power at a third power level lower than a first power level, and (g3) supplying RF bias power at a fourth power level lower than a second power level.

[0018] Other features include (g) a step of (g4) supplying RF bias power at a fifth power level higher than the fourth power level during a third predetermined period after a second predetermined period at a fourth power level, and (g5) supplying RF bias power at a sixth power level lower than the fourth power level during a fourth predetermined period after a third predetermined period. The RF plasma power in (e) is supplied at a first power level in the range of 30W to 3000W, and further includes a step of supplying RF bias power at a second power level in the range of greater than 0W and up to 1000W during a first predetermined period.

[0019] In other features, this method includes a step of repeating (c) through (g5) one or more times. The third power level is in the range of 0W to 500W. The fourth power level is in the range of 30W to 1000W, the fifth power level is in the range of 100W to 1500W, and the sixth power level is in the range of 30W to 1000W.

[0020] Other features include a specified temperature range of 0°C to 80°C, a specified pressure range of 5mT to 450mT, and a specified pressure range of 5mT to 35mT. The processing chamber is a capacitively coupled plasma chamber.

[0021] Further application areas of this disclosure will become apparent from the modes for carrying out the invention, the claims, and the drawings. The modes for carrying out the invention and specific examples are intended for illustrative purposes only and are not intended to limit the scope of this disclosure. [Brief explanation of the drawing]

[0022] This disclosure will be better understood from the embodiments for carrying out the invention and the accompanying drawings.

[0023] [Figure 1] Functional block diagram of an exemplary inductively coupled plasma (ICP) substrate processing system for depositing an ashing hard mask according to the present disclosure.

[0024] [Figure 2] Graph representing exemplary timing of RF plasma power, RF bias power, and gas flow according to the present disclosure.

[0025] [Figure 3] Graph representing exemplary sp3 / sp2 ratios of various films according to the present disclosure.

[0026] [Figure 4] Graph representing exemplary film stress as a function of processing power.

[0027] [Figure 5] Graph representing exemplary etching rates of various AHM films according to the present disclosure.

[0028] [Figure 6] Flowchart of an exemplary method for depositing a carbon AHM film according to the present disclosure.

[0029] [Figure 7] Functional block diagram of an exemplary capacitively coupled plasma (CCP) substrate processing system for depositing an ashing hard mask according to the present disclosure.

[0030] In the drawings, reference numbers may be used repeatedly to identify similar and / or identical elements.

DETAILED DESCRIPTION OF THE INVENTION

[0031] Substrates for semiconductor memory and other applications require more pairs of memory cells to increase memory capacity. High aspect ratio (HAR) etching is performed to increase the number of memory pairs. A hard mask is used during etching to prevent etching of some exposed materials while others are being etched. To enable HAR etching, a highly selective and low-stress ashable hard mask (AHM) is required.

[0032] Candidate AHM films include highly selective permeability (HST) films, diamond-like carbon (DLC) films, and ashable carbon extension (ACE) films. However, each of these films has its drawbacks. These films have low density, high hydrogen (H) content, and / or high stress. Low density and high H content reduce etching resistance. High stress induces film delamination.

[0033] The carbon-based AHM film according to this disclosure has low stress and relatively high etching resistance. The carbon-based AHM film is deposited at a relatively low temperature using a hydrocarbon precursor and one or more other gases. Deposition carried out at low temperatures is sp 3 Maintain the bond. Plasma treatment may be performed after deposition to reduce stress and minimize the H component.

[0034] For example, hydrocarbon precursors are C x H y This includes (x is an integer from 1 to 10, and y is an integer from 2 to 24). For example, the hydrocarbon precursor may include methane (CH4), acetylene (C2H2), or other hydrocarbon gases. One or more other gases are selected from the group consisting of helium (He), argon (Ar), krypton (Kr), neon (Ne), nitrogen molecules (N2), and hydrogen molecules (H2).

[0035] In some examples, deposition and processing are carried out until a desired film thickness is reached. In some examples, either cyclic deposition or pulsed deposition is performed. If the deposition rate is slow, the cyclic deposition mode is used. If the deposition rate is fast, the pulsed deposition mode is used. In some examples, the processing involves using an inert plasma gas mixture to reduce film stress and minimize the H component by processing the deposited film. In some examples, the inert plasma gas mixture includes one or more gases selected from the group consisting of helium (He), argon (Ar), krypton (Kr), and neon (Ne).

[0036] Referring here to Figure 1, an exemplary substrate processing system 110 according to the present disclosure is shown. The substrate processing system 110 comprises a coil drive circuit 111. In some examples, the coil drive circuit 111 includes an RF source 112, a pulse circuit 114, and a tuning circuit 113. The pulse circuit 114 controls the TCP envelope of an RF signal and changes the duty cycle of the TCP envelope between 1% and 99% during operation. As can be understood, the pulse circuit 114 and the RF source 112 can be combined or separated.

[0037] The tuning circuit 113 may be directly connected to one or more induction coils 116. The tuning circuit 113 tunes the output of the RF source 112 to a desired frequency and / or phase, matches the impedance of the coils 116, and / or divides the power among the coils 116. Although examples including multiple coils are shown, a single conductor or a single coil including multiple conductors may be used.

[0038] A dielectric window 124 is positioned along one side of the processing chamber 128. The processing chamber 128 further includes a substrate support (or base) 132 for supporting the substrate 134. The substrate support 132 may include an electrostatic chuck (ESC), a mechanical chuck, or other types of chucks. A processing gas is supplied to the processing chamber 128, and the plasma 140 is generated inside the processing chamber 128. An RF bias drive circuit 152 may be used to supply an RF bias to the substrate support 132 during operation in order to control the ion energy. The RF bias drive circuit 152 may include an RF source and an impedance matching circuit (not shown).

[0039] A gas supply system 156 may be used to supply a process gas mixture to the process chamber 128. The gas supply system 156 may include a gas source 157 (e.g., a precursor, vapor, one or more other gases, an inert gas), a gas metering system 158 including valves and a mass flow controller, and a manifold 159. A gas injector (not shown) may be located in the center (or elsewhere) of the dielectric window 124 and is used to inject the gas mixture from the gas supply system 156 into the process chamber 128.

[0040] A heater / cooler 164 may be used to heat / cool the substrate support 132 to a predetermined temperature. The exhaust system 165 includes a valve 166 and a pump 167 to control the pressure in the processing chamber and / or to remove the reactant from the processing chamber 128 by purging or exhausting.

[0041] Controller 154 may be used to control the process. Controller 154 monitors system parameters and controls the supply of the gas mixture, striking, plasma maintenance and arc extinguishing, reactant removal, and cooling gas supply.

[0042] Referring here to Figure 2, an exemplary timing diagram is shown for the supply of the gas mixture (containing a hydrocarbon precursor and one or more other gases), the inert gas mixture, RF plasma power, and RF bias power. The carbon ashable hard mask is deposited by supplying the gas mixture and RF plasma power and / or RF bias power. In some examples, a plasma treatment (without precursor) using the inert plasma gas mixture follows some or all of the deposition process. In some examples, the reactant is purged or exhausted from the chamber after deposition and before treatment. In other examples, the precursor flow is stopped before the treatment step without purging or exhausting.

[0043] In some examples, the deposition and processing steps are performed at frequencies ranging from 0.05 Hz to 1000 Hz. In other examples, the deposition and processing steps are performed at frequencies ranging from 0.1 Hz to 200 Hz. Deposition may constitute 30% to 95% of each period or cycle, and processing may constitute 70% to 5% of each period or cycle. In one example, deposition is performed for 10 seconds out of a 12-second period, and processing is performed for 2 seconds out of a 12-second period or cycle, but other lengths of periods or cycles may be used.

[0044] During the deposition process for a period or cycle, a gas mixture containing a hydrocarbon precursor gas and one or more other gases is supplied to the processing chamber. RF plasma power is supplied at the first power level, and RF bias power is supplied at the second power level. In some examples, the first power level ranges from 30W to 3000W, and the second power level ranges from 0W to 1000W.

[0045] During a processing step of a period or cycle, the supply of hydrocarbon precursors is stopped and the supply of an inert gas mixture is started or continued (if an inert gas mixture was used in the previous deposition step). If continued, the flow rate of the inert gas mixture can be continued without increasing, decreasing, or changing. The plasma may be maintained or extinguished. During processing, RF plasma power is supplied at a third power level lower than the first power level. In some examples, the third power level ranges from 0W to 500W.

[0046] The RF bias power may vary during deposition and processing. For example, the RF bias is initially supplied at the fourth power level, increased to the fifth power level (higher than the second power level), and then returned to the sixth power level (lower than the second power level, and may be the same as or different from the fourth power level). In some examples, the RF bias power is reduced, pulsed to a higher level than the RF bias power during deposition, and then returned to a lower level than the RF bias power during deposition. In some examples, the fourth power level ranges from 30W to 1000W, the fifth power level ranges from 100W to 1500W, and the sixth power level ranges from 30W to 1000W. Specific exemplary RF bias profiles are shown for illustrative purposes, but other RF bias profiles may also be used.

[0047] In some examples, deposition and processing are carried out at temperatures ranging from -20°C to 200°C. In other examples, deposition and processing are carried out at temperatures ranging from -20°C to 100°C. In yet another example, deposition and processing are carried out at temperatures ranging from 0°C to 80°C.

[0048] In some examples, deposition and processing are carried out at pressures ranging from 5 mT to 450 mT. In other examples, deposition and processing are carried out at pressures ranging from 5 mT to 150 mT. In yet another example, deposition and processing are carried out at pressures ranging from 5 mT to 35 mT.

[0049] Referring to Figure 3, we can see sp of various different hard masks. 3 / sp2 The proportions are shown. Examples include HST, carbon AHM deposited at 20°C (untreated), carbon AHM deposited at 80°C (untreated), and carbon AHM deposited at 20°C (untreated). As will be further explained below, carbon AHM deposited at 20°C (untreated) is formed at low film stress and low temperature.

[0050] Referring to Figure 4, the stress of the carbon AHM can be adjusted by adjusting the power to the processing portion of each period or cycle. As can be seen from the figure, the film stress decreases as the power increases. The stress of the carbon AHM is highest at approximately -2350 MPa without processing, and the stress decreases with processing.

[0051] Next, referring to Figure 5, silicon nitride (Si x N y The etching rates of various hard masks (HST, treated CH4-based AHM, and treated C2H2-based AHM) during etching of various types of films, including silicon dioxide (SiO2), silicon (Si), and tungsten (W), are shown. In this example, C2H2-based AHM has a slightly lower etching rate than HST. In this example, CH4-based AHM has a slightly higher etching rate than HST.

[0052] Next, referring to Figure 6, a method 600 for depositing carbon AHM is shown. In 610, a substrate is placed in a processing chamber, such as the processing chamber in Figure 1. In 614, the chamber pressure and substrate temperature are adjusted to a predetermined pressure and temperature range. In 618, a gas mixture containing a hydrocarbon precursor and one or more other gases is supplied to the processing chamber. In 622, plasma is generated in the processing chamber by supplying RF plasma power at a first power level. In 628, RF bias power is supplied at a second power level.

[0053] In 632, the method determines whether a predetermined period has ended. If 632 is false, the method returns to 618. Otherwise, the method continues to 640, stopping the supply of the hydrocarbon precursor and starting or continuing the supply of the inert gas mixture.

[0054] In 644, RF plasma power is supplied at the third power level. In 648, RF bias power is supplied at the fourth power level. In some examples, the RF bias power remains at the fourth power level throughout the processing period.

[0055] In other examples, the RF bias power is temporarily pulsed during processing. For example, the RF bias power remains at the fourth power level for a first predetermined period. In 652, the RF bias power is supplied at the fifth power level for a second predetermined period. In 656, the RF bias power is supplied at the sixth power level for a third predetermined period. In some examples, the fifth power level is higher than the second, fourth, and sixth power levels. In some examples, the fourth and sixth power levels are the same.

[0056] At 660, this method determines whether an additional period or cycle is needed. If 660 is true, this method continues to 618. Otherwise, this method terminates.

[0057] Referring next to Figure 7, another exemplary substrate processing system 720 according to the present disclosure is shown. The substrate processing system 720 comprises a processing chamber 722 surrounding the other components of the substrate processing system 720, which includes an RF plasma (if used). The substrate processing system 720 comprises a substrate support 726, such as an upper electrode 724 and an electrostatic chuck (ESC). During operation, a substrate 728 is placed on the substrate support 726.

[0058] For illustrative purposes only, the upper electrode 724 may include a gas distribution device 729, such as a showerhead, for introducing and distributing the processing gas. The gas distribution device 729 may include a stem portion, one end of which is connected to the upper surface of the processing chamber. The base portion is generally cylindrical and extends radially outward from the other end of the stem portion, away from the upper surface of the processing chamber. The substrate-facing surface or faceplate of the base portion of the showerhead has multiple holes through which a precursor, reactant, etching gas, inert gas, carrier gas, other processing gas, or purge gas flows. Alternatively, the upper electrode 724 may include a conductive plate, and the processing gas may be introduced by another means.

[0059] The substrate support 726 includes a base plate 730 that functions as a lower electrode. The base plate 730 supports a heating plate 732 which may correspond to a ceramic multi-zone heating plate. A thermal resistance layer 734 may be placed between the heating plate 732 and the base plate 730. The base plate 730 may include one or more channels 736 for circulating a coolant through the base plate 730.

[0060] The RF generation system 740 generates an RF voltage and outputs it to either the upper electrode 724 or the lower electrode (e.g., the base plate 730 of the ESC 726). The other of the upper electrode 724 and the base plate 730 may be DC-connected, AC-connected, or floating. For illustrative purposes only, the RF generation system 740 may include an RF generator 742 that generates an RF plasma electrode supplied to the upper electrode 724 or the base plate 730 by a matched distribution network 744. In other examples, the plasma may be inductively or remotely generated.

[0061] The gas supply system 750 comprises one or more gas sources 752-1, 752-2, ..., and 752-N (collectively, gas source 752) (where N is an integer greater than zero). The gas sources 752 are connected to the manifold 760 by valves 754-1, 754-2, ..., and 754-N (collectively, valve 754), and MFCs 756-1, 756-2, ..., and 756-N (collectively, MFC 756). A secondary valve may be used between the MFC 756 and the manifold 760. Although a single gas supply system 750 is shown, two or more gas supply systems may be used.

[0062] The temperature controller 763 may be connected to a plurality of thermal control elements (TCEs) 764 located on the heating plate 732. The temperature controller 763 may be used to control the plurality of TCEs 764 to control the temperature of the substrate support 726 and the substrate 728. The temperature controller 763 may communicate with a refrigerant assembly 766 to control the flow of refrigerant through the channel 736. For example, the refrigerant assembly 766 may include a refrigerant pump, a storage tank, and / or one or more temperature sensors. The temperature controller 763 operates the refrigerant assembly 766 to selectively flow refrigerant through the channel 736 to cool the substrate support 726. Valves 770 and pumps 772 may be used to exhaust the reactant from the processing chamber 722. A system controller 780 may be used to control the components of the substrate processing system 720.

[0063] In some examples, the RF generator 742 includes a high-frequency (HF) source 784 and a low-frequency (LF) source 786. The HF source 784 operates in the frequency range of 13 MHz to 800 MHz. For example, the HF source 784 operates at 27 MHz or 60 MHz. In some examples, the HF source 784 outputs power in the range of 50 W to 3000 W. The LF source 786 operates in the frequency range of 200 kHz to 13 MHz. For example, the LF source 786 operates at 400 kHz, 2 MHz, or 12.5 MHz. In some examples, the LF source 786 outputs power in the range of 100 W to 3000 W. As can be understood, deposition can be performed with HF and LF RF power, HF RF power, or LF RF power.

[0064] In some examples, the RF power may be continuous or pulsed between one or more levels. When pulsed operation is used, the pulsation may be performed at a frequency in the range of 1 Hz to 1 MHz. In some examples, the chamber pressure is maintained at a predetermined pressure in the range of 5 mT to 450 mT. In other examples, deposition and processing are performed at a pressure in the range of 5 mT to 150 mT. In yet another example, deposition and processing are performed at a pressure in the range of 5 mT to 35 mT. As described above, plasma processing using an inert gas may be performed as described above to reduce film stress.

[0065] The foregoing is essentially illustrative and is by no means intended to limit the Disclosure, its application, or its use. The broad teachings of this Disclosure can be implemented in various forms. Thus, although this Disclosure includes certain examples, the true scope of this Disclosure should not be so limited, as other modifications become apparent when examining the drawings, specification, and the claims below. It should be understood that one or more steps within a Method may be performed in a different order (or simultaneously) without altering the principles of this Disclosure. Furthermore, although each embodiment is said to have certain features, any one or more of those features described in relation to the embodiments of this Disclosure may be implemented in other embodiments and / or in combination with features of other embodiments (even if such combination is not specified). In other words, the embodiments described are not mutually exclusive, and rearrangements of one or more embodiments remain within the scope of this Disclosure.

[0066] Spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.) are described using a variety of terms, including “connected,” “engaged,” “joined,” “adjacent,” “nearby,” “above,” “upward,” “downward,” and “positioned.” When a relationship between a first element and a second element is described in the above disclosure, unless it is explicitly stated to be “direct,” the relationship may be a direct relationship with no other intervening elements between the first and second elements, or it may be an indirect relationship with one or more intervening elements (spatially or functionally) between the first and second elements. The expression “at least one of A, B, and C” as used herein should be interpreted as meaning the logic using the non-exclusive logic OR (A OR B OR C), and not as “at least one of A, at least one of B, and at least one of C.”

[0067] In some embodiments, the controller is part of a system which may be part of the examples described above. Such a system may include a semiconductor processing apparatus comprising a processing tool, a chamber, a processing platform, and / or specific processing components (such as a wafer pedestal, a gas flow system, etc.). These systems may be integrated with electronic equipment for controlling pre-processing, processing, and post-processing operations of semiconductor wafers or substrates. These electronic equipment may be referred to as “controllers” and may control various components or sub-components of the system. Depending on the processing requirements and / or the type of system, the controller may be programmed to control any of the processes disclosed herein, including the supply of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid supply settings, position operation settings, wafer loading and unloading to and from tools and other transport tools, and / or wafer loading and unloading to and from load locks connected to or coupled to a particular system.

[0068] Generally, a controller may be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive and issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. An integrated circuit may include a firmware-type chip that stores program instructions, a chip defined as a digital signal processor (DSP), an application-specific integrated circuit (ASIC), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). Program instructions are instructions that are transmitted to the controller in the form of various individual settings (or program files) and may define operating parameters for executing a particular process on or for a semiconductor wafer or for a system. In some embodiments, the operating parameters may be part of a recipe defined by a process engineer to realize one or more layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or one or more processing steps during the manufacturing of a wafer die.

[0069] In some embodiments, the controller may be part of a computer integrated with or coupled to the system, or otherwise network-coupled to the system, or a combination thereof, or coupled to such a computer. For example, the controller may reside in a “cloud” enabling remote access to wafer processing, or may be all or part of a fab host computer system. The computer may enable remote access to the system to monitor the progress of manufacturing operations, investigate the history of past manufacturing operations, investigate trends or performance criteria from multiple manufacturing operations, modify parameters of the current operation, set up subsequent processing steps for the current operation, or start a new process. In some examples, a remote computer (e.g., a server) may provide process recipes to the system via a network that may include a local network or the internet. The remote computer may include a user interface that enables the entry or programming of parameters and / or settings that are then transmitted from the remote computer to the system. In some examples, the controller receives instructions in a data format that specify the parameters of each processing step performed during one or more operations. It should be understood that the parameters may be specific to the type of process being performed and the type of tool that the controller is coupled to or configured to control. Therefore, as described above, the controllers may be distributed by, for example, including one or more separate controllers that are network-connected to one another, and by cooperating toward a common purpose such as the processes and controls described herein. An example of controllers distributed toward such a purpose would be one or more integrated circuits in a room that are located remotely (for example, at the platform level or as part of a remote computer) and communicate with one or more integrated circuits that cooperate to control processes in the room.

[0070] Rather than being limiting, the exemplary systems may include plasma etching chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and other semiconductor processing systems that may be related to or used in the fabrication and / or manufacture of semiconductor wafers.

[0071] As described above, the controller may communicate with one or more of the following, depending on the processing steps performed by the tool: other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, nearby tools, tools installed throughout the factory, a main computer, another controller, or tools used for material handling to load and unload wafer containers to and from tool locations and / or load ports in a semiconductor manufacturing plant. This disclosure includes the following examples of applications. [Application Example 1] A method for depositing a carbon ashable hard mask layer on a substrate, (a) A step of placing the substrate in the processing chamber, (b) A step of setting the chamber pressure within a predetermined pressure range, (c) A step of setting the substrate temperature within a predetermined temperature range from -20°C to 200°C, (d) A step of supplying a gas mixture containing a hydrocarbon precursor and one or more other gases, (e) A step of generating plasma by supplying RF plasma power during a first predetermined period and depositing a carbon ashable hard mask layer on the substrate, Methods that include... [Application Example 2] The method described in Application Example 1, The method wherein the processing chamber is an inductively coupled plasma chamber. [Application Example 3] The method described in Application Example 2, (e) The RF plasma power in (e) is supplied at a first power level ranging from 30W to 3000W. Furthermore, the method includes the step of supplying RF bias power at a second power level greater than 0W and up to 1000W during the first predetermined period. [Application Example 4] The method according to Application Example 1, further, (f) After the first predetermined period, a step of stopping the flow of the hydrocarbon precursor, (g) A step of performing substrate processing on the substrate in order to reduce stress, Methods that include... [Application Example 5] The method described in Application Example 4, further, A method comprising the steps of performing the deposition of the carbon ashable hard mask and the substrate treatment one or more times. [Application Example 6] The method described in Application Example 4, A method wherein the deposition of the carbon ashable hard mask constitutes 30% to 95% of the deposition / processing period, and the substrate processing constitutes 70% to 5% of the deposition / processing period. [Application Example 7] The method described in Application Example 4, A method comprising repeating the deposition of the carbon ashable hard mask and the substrate processing at a frequency in the range of 0.05 Hz to 1000 Hz. [Application Example 8] The method described in Application Example 4, (g) is, (g1) A step of supplying an inert gas mixture, (g2) A step of supplying the RF plasma power at a third power level lower than the first power level, (g3) A step of supplying the RF bias power at a fourth power level lower than the second power level, Methods that include... [Application Example 9] The method described in Example 8, (g) further, (g4) After a second predetermined period at the fourth power level, a step of supplying the RF bias power at a fifth power level higher than the fourth power level during a third predetermined period, (g5) After the third predetermined period, a step of supplying the RF bias power at a sixth power level lower than the fourth power level during the fourth predetermined period, Methods that include... [Application Example 10] The method described in Application Example 9, further, A method comprising the step of repeating (c) through (g5) one or more times. [Application Example 11] The method described in Application Example 10, The aforementioned third power level is in the range of 0W to 500W. The aforementioned fourth power level is in the range of 30W to 1000W. The fifth power level is in the range of 100W to 1500W. The sixth power level is in the range of 30W to 1000W, by method. [Application Example 12] The method described in Application Example 1, The method wherein the predetermined temperature range is from 0°C to 80°C. [Application Example 13] The method described in Application Example 1, The method wherein the predetermined pressure range is from 5 mT to 450 mT. [Application Example 14] The method described in Application Example 1, The method wherein the predetermined pressure range is from 5 mT to 35 mT. [Application Example 15] The method described in Application Example 1, The method wherein the processing chamber is a capacitively coupled plasma chamber. [Application Example 16] A method for depositing a carbon ashable hard mask layer on a substrate, (a) A step of placing the substrate in the processing chamber, (b) A step of setting the chamber pressure within a predetermined pressure range, (c) A step of setting the substrate temperature within a predetermined temperature range, (d) A step of supplying a gas mixture containing a hydrocarbon precursor and one or more gases, (e) A step of generating plasma by supplying RF plasma power during a first predetermined period and depositing a carbon ashable hard mask layer, (f) After the first predetermined period, a step of stopping the flow of the hydrocarbon precursor, (g) A step of performing substrate processing on the substrate in order to reduce stress, Methods that include... [Application Example 17] The method described in Application Example 16, further, A method comprising the steps of further performing the deposition and substrate processing of the carbon ashable hard mask one or more times. [Application Example 18] The method described in Application Example 17, A method wherein the deposition of the carbon ashable hard mask is performed for 30% to 95% of the deposition / processing period, and the substrate processing is performed for 70% to 5% of the deposition / processing period. [Application Example 19] The method described in Application Example 17, A method comprising repeating the deposition of the carbon ashable hard mask and the substrate processing at a frequency in the range of 0.05 Hz to 1000 Hz. [Application Example 20] The method described in Application Example 16, (g) is, (g1) A step of supplying an inert gas mixture, (g2) A step of supplying the RF plasma power at a third power level lower than the first power level, (g3) A step of supplying the RF bias power at a fourth power level lower than the second power level, Methods that include... [Application Example 21] The method described in Application Example 20, (g) further, (g4) After a second predetermined period at the fourth power level, a step of supplying the RF bias power at a fifth power level higher than the fourth power level during a third predetermined period, (g5) After the third predetermined period, a step of supplying the RF bias power at a sixth power level lower than the fourth power level during the fourth predetermined period, Methods that include... [Application Example 22] The method described in Application Example 21, (e) The RF plasma power in (e) is supplied at a first power level ranging from 30W to 3000W. Furthermore, the method includes the step of supplying RF bias power at a second power level greater than 0W and up to 1000W during the first predetermined period. [Application Example 23] The method according to Application Example 21, further, A method comprising the step of repeating (c) through (g5) one or more times. [Application Example 24] The method described in Application Example 21, The aforementioned third power level is in the range of 0W to 500W. The aforementioned fourth power level is in the range of 30W to 1000W. The fifth power level is in the range of 100W to 1500W. The sixth power level is in the range of 30W to 1000W, by method. [Application Example 25] The method described in Application Example 16, The method wherein the predetermined temperature range is from 0°C to 80°C. [Application Example 26] The method described in Application Example 16, The method wherein the predetermined pressure range is from 5 mT to 450 mT. [Application Example 27] The method described in Application Example 16, The method wherein the predetermined pressure range is from 5 mT to 35 mT. [Application Example 28] The method described in Application Example 16, The method wherein the processing chamber is a capacitively coupled plasma chamber.

Claims

1. A method for depositing a carbon ashable hard mask layer on a substrate, (a) A step of placing the substrate in the processing chamber, (b) A step of setting the chamber pressure within a predetermined pressure range, (c) A step of setting the substrate temperature within a predetermined temperature range, (d) A step of supplying a gas mixture containing a hydrocarbon precursor and one or more other gases, (e) A step of generating plasma by supplying RF plasma power and RF bias power at a first power level and a second power level, respectively, during a first predetermined period, and depositing the carbon ashable hard mask layer on the substrate, (f) After the first predetermined period, a step of stopping the flow of the hydrocarbon precursor, (g) A process of performing substrate treatment in order to reduce stress, (g1) Supply an inert gas mixture, (g2) By changing the power level of the RF bias power one or more times during the substrate processing, A step of performing substrate processing on the substrate in order to reduce stress, Methods that include...

2. The method according to claim 1, (g2) is a method comprising the step of changing the power level of the RF bias power multiple times during the substrate processing.

3. The method according to claim 1, (g2) A method comprising the step of supplying the RF plasma power at a third power level lower than the first power level (h1).

4. The method according to claim 3, (g2) A method comprising the step of supplying the RF bias power at a fourth power level lower than the second power level (h2).

5. The method according to claim 4, (g2) is a method comprising (h3) supplying the RF bias power at a fifth power level higher than the fourth power level during a third predetermined period after a second predetermined period at the fourth power level.

6. The method according to claim 5, (g2) is a method comprising (h4) the step of supplying the RF bias power at a sixth power level lower than the second power level during a fourth predetermined period after the third predetermined period.

7. The method according to claim 1, (g2) is a method comprising the steps of reducing the RF bias power to a third power level lower than the second power level, performing substrate processing, pulsing the RF bias power to a level higher than the third power level during substrate processing, and returning the RF bias power to a level lower than the second power level during substrate processing.

8. The method according to claim 1, (g2) A method comprising the step of maintaining the plasma during the substrate processing.

9. The method according to claim 1, (g2) is a method comprising the step of extinguishing the plasma during the substrate processing.

10. The method according to claim 1, (g2) is, (h1) A step of extinguishing the plasma, (h2) A step of pulsing the RF bias power, Methods that include...

11. The method according to claim 1, further, A method comprising the steps of performing the deposition of the carbon ashable hard mask layer and the substrate treatment one or more times.

12. The method according to claim 1, further, A method comprising the step of repeating (c) through (g2) one or more times.

13. The method according to claim 1, The method wherein the processing chamber is an inductively coupled plasma chamber.

14. The method according to claim 1, A method wherein the deposition of the carbon ashable hard mask layer is performed for 30% to 95% of the deposition / processing period, and the substrate processing is performed for 70% to 5% of the deposition / processing period.

15. The method according to claim 1, A method comprising repeating the deposition of the carbon ashable hard mask layer and the substrate processing at a frequency in the range of 0.05 Hz to 1000 Hz.

16. The method according to claim 6, The aforementioned first power level is in the range of 30W to 3000W. The aforementioned second power level is greater than 0W and ranges up to 1000W. The aforementioned third power level is in the range of 0W to 500W. The aforementioned fourth power level is in the range of 30W to 1000W. The fifth power level is in the range of 100W to 1500W. The sixth power level is in the range of 30W to 1000W, according to the method.

17. The method according to claim 1, The method wherein the predetermined temperature range is from 0°C to 80°C.

18. The method according to claim 1, The method wherein the predetermined temperature range is from -20°C to 200°C.

19. The method according to claim 1, The method wherein the predetermined pressure range is from 5 mT to 450 mT.

20. The method according to claim 1, The method wherein the predetermined pressure range is from 5 mT to 35 mT.

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