Substrate processing method

Abstract

This substrate processing method includes a step (a), a step (b), a step (c), a step (d), a step (e), and a step (f). Step (a) is a step for providing a substrate that has a pattern and has a to-be-protected film positioned at the base section of the pattern. Step (b) is a step for layering a catalytic membrane on the to-be-protected film positioned at the base section of the pattern. Step (c) is a step for forming a protective film inside the pattern using the VLS growth method so as to cover the to-be-protected film and support the catalytic membrane from below. Step (d) is a step for removing the catalytic membrane supported by the protective film from below. Step (e) is a step for executing prescribed processing in a section different from the substrate pattern while in a state in which the to-be-protected film is covered by the protective film. Step (f) is a step for removing the protective film in the pattern.

Description

Technical Field

[0004] , , , , , , , , , , ,

[0005]

[0001] The present disclosure relates to a substrate processing method.

Background Art

[0002] There is a technique of forming an embedded film in a pattern of a substrate by Chemical Vapor Deposition (CVD) or Atomic Layer Deposition (ALD).

Prior Art Documents

Patent Documents

[0003]

Patent Document 1

Patent Document 2

Summary of the Invention

[0006] According to this disclosure, the possibility of damage to the protected film located at the bottom of the pattern can be reduced. [Brief explanation of the drawing]

[0007] [Figure 1] Figure 1 is a flowchart showing an example of the flow of a substrate processing method according to the embodiment. [Figure 2] Figure 2 shows an example of the flow of changes in the substrate during each step of the substrate processing method according to the present invention. [Figure 3] Figure 3 shows an example of the flow of changes in the substrate during each step of the substrate processing method according to the present invention. [Figure 4] Figure 4 shows an example of the flow of changes in the substrate during each step of the substrate processing method according to the present invention. [Figure 5] Figure 5 shows an example of the flow of changes in the substrate during each step of the substrate processing method according to the present invention. [Figure 6] Figure 6 shows an example of the flow of changes in the substrate during each step of the substrate processing method according to the present invention. [Figure 7] Figure 7 shows an example of the flow of changes in the substrate during each step of the substrate processing method according to the present invention. [Figure 8]Figure 8 shows an example of the flow of changes in the substrate during each step of the substrate processing method according to the present invention. [Figure 9] Figure 9 is a cross-sectional view showing an example of a substrate in a comparative example after a burial film has been formed by CVD or ALD. [Figure 10] Figure 10 is a flowchart showing an example of the flow of a substrate processing method according to a modified embodiment. [Figure 11] Figure 11 is a diagram showing an example of the flow of changes in the substrate during each step of the substrate processing method according to a modified embodiment. [Figure 12] Figure 12 is a diagram showing an example of the flow of changes in the substrate during each step of the substrate processing method according to a modified embodiment. [Figure 13] Figure 13 is a diagram showing an example of the flow of changes in the substrate during each step of the substrate processing method according to a modified embodiment. [Figure 14] Figure 14 is a diagram showing an example of the flow of changes in the substrate during each step of the substrate processing method according to a modified embodiment. [Figure 15] Figure 15 shows an example of the flow of changes in the substrate during each step of the substrate processing method according to a modified embodiment. [Figure 16] Figure 16 is a diagram showing an example of the flow of changes in the substrate during each step of the substrate processing method according to a modified embodiment. [Modes for carrying out the invention]

[0008] Hereinafter, embodiments of the substrate processing method disclosed in this application will be described in detail with reference to the drawings. However, this embodiment does not limit the disclosed substrate processing method.

[0009] Incidentally, when the film to be protected is located at the bottom of the pattern on the substrate, the embedded film may be used as a protective film for protecting the film to be protected. For example, after forming an embedded film covering the film to be protected in the pattern on the substrate by CVD or ALD, the substrate may be exposed to reactive chemical species to perform a predetermined treatment on a portion different from the pattern on the substrate. Examples of the predetermined treatment include film formation, etching, modification by plasma irradiation, doping of doping components, and the like.

[0010] However, in CVD and ALD, it is difficult to form an embedded film without generating voids such as seams and voids in the pattern. That is, in CVD and ALD, film formation starts from the sidewalls of the pattern, and finally the opposing films contact each other to complete the formation of the embedded film. Therefore, voids such as voids or seams are generated at the portion where the films finally contact each other. Therefore, when performing a predetermined treatment on a portion different from the pattern on the substrate, reactive chemical species may pass through the voids such as seams and voids of the embedded film and reach the film to be protected located at the bottom of the pattern. As a result, there is a risk of damage to the film to be protected.

[0011] Therefore, a technique for reducing the possibility of damage to the film to be protected located at the bottom of the pattern is expected.

[0012] In the following description, the "pattern" refers to the entire shape formed on the substrate. The pattern refers to the entire shape recessed in the thickness direction of the substrate, such as a hole, a trench, a line and space, etc. Further, the pattern has a "sidewall" which is the inner peripheral surface of the recessed shape, a "bottom" which is the bottom portion of the recessed shape, and a "top" which is the surface of the substrate near the sidewall and is continuous with the sidewall.

[0013] (An example of the flow of the substrate processing method according to the embodiment) FIG. 1 is a flowchart showing an example of the flow of the substrate processing method according to the embodiment. FIGS. 2 to 8 are diagrams showing an example of the flow of changes in the substrate W in each step of the substrate processing method according to the embodiment.

[0014] First, a substrate W is provided as shown in Figure 2 (step S101). Figure 2 schematically shows an example of a cross-section of the substrate W in its initial state. The substrate W includes an insulating film 100 and a film to be processed 200, as shown in Figure 2, for example. A pattern 101 is formed on the insulating film 100. A film to be protected 110 is located at the bottom of the pattern 101. The film to be processed 200 is formed on the substrate W at a different location from the pattern 101. The film to be processed 200 is an example of a portion of the substrate W that is different from the pattern 101.

[0015] Next, the top surface of pattern 101 is modified (step S102). For example, a plasma of a reducing gas or an oxidizing gas is intermittently generated, and the surface of the top of pattern 101 is modified with the generated plasma of the reducing gas or oxidizing gas. As a result, a hydrophobic modified film 100a is formed on the top of pattern 101, as shown in Figure 3.

[0016] Next, a colloidal solution containing a metal (catalyst) is supplied to the bottom of pattern 101, and then the solvent of the colloidal solution is evaporated to laminate the metal film 120 onto the protective film 110 (step S103, Figure 4). Since a hydrophobic modified film 100a that inhibits the adsorption of the colloidal solution is formed on the top of pattern 101, the colloidal solution does not adsorb onto the top of pattern 101 where the modified film 100a is formed. Therefore, the colloidal solution is concentrated and adsorbed on the bottom of pattern 101. This allows for the selective lamination of the metal film 120 onto the protective film 110. In this case, the metal film 120 was laminated by supplying a colloidal solution, but the metal film 120 may also be laminated by CVD using a metal-containing liquid in a low-temperature environment.

[0017] Next, a protective film 130 is formed within the pattern 101 using a VLS (Vapor Liquid Solid) growth method that uses the metal film 120 as a catalyst, supporting the metal film 120 from below and covering the film to be protected 110 (step S104, Figure 5). The VLS growth method is a technique that grows the film from the bottom up of the pattern 101 by inducing a eutectic reaction between the metal film 120, which is the catalyst film, and the raw material gas. The raw material gas may be supplied together with an inert gas. Furthermore, from the viewpoint of promoting the eutectic reaction between the metal film 120, which is the catalyst film, and the raw material gas, thereby promoting the growth of the protective film 130, the raw material gas may be supplied under conditions where plasma or ultraviolet light is irradiated.

[0018] Next, the metal film 120, which is supported from below by the protective film 130, is removed (step S105, Figure 6). The removal of the metal film 120 is achieved, for example, by dry etching or chemical mechanical polishing (CMP).

[0019] Next, the film 200 to be treated on the substrate W is subjected to a predetermined treatment (step S106). The predetermined treatment is a treatment in which the film 200 to be treated on the substrate W is exposed to a reactive chemical species. In this embodiment, the predetermined treatment is a treatment in which the film 200 to be treated on the substrate W is exposed to a reactive chemical species and etched by wet etching or dry etching. As a result, the cross-section of the substrate W becomes, for example, the cross-section shown in Figure 7. In other forms, the predetermined treatment may be a treatment of the film 200 to be treated on the substrate W, such as film deposition, modification by plasma irradiation, or doping with doping components.

[0020] Next, the protective film 130 within the pattern 101 is removed (step S107, Figure 8), and the process is terminated. This is an example of the processing flow of the substrate processing method according to the embodiment.

[0021] During the process shown in Figure 1, the order of the metal film removal step (step S105) and the processing step (step S106) can be interchanged. That is, the metal film 120 may be removed from the protective film 130 after the predetermined processing has been applied to the film 200 to be processed on the substrate W.

[0022] Incidentally, instead of the VLS growth method, it is also possible to form a embedding film that covers the protective film 110 within the pattern 101 as a protective film using CVD or ALD. In this case, film formation starts from the side wall of the pattern 101, and the formation of the embedding film is completed when the opposing films come into contact with each other. As a result, the cross-section of the substrate W' becomes, for example, the cross-section shown in Figure 9. Figure 9 is a cross-sectional view showing an example of the substrate W' in a comparative example after the embedding film 135 has been formed by CVD or ALD. In the embedding film 135 formed by CVD or ALD, voids or seams 135a are generated in the area where the films finally come into contact with each other.

[0023] If voids 135a occur in the embedded film 135, when the film 200 to be processed on the substrate W is subjected to a predetermined process, reactive chemical species may pass through the voids 135a in the embedded film 135 and reach the protective film 110 located at the bottom of the pattern 101. As a result, damage to the protective film 110 may occur.

[0024] In contrast, in the substrate processing method according to this embodiment, a protective film 130 is formed in the pattern 101 using a bottom-up method by VLS growth, and a predetermined treatment is applied to the film 200 to be processed on the substrate W while the film to be protected 110 is covered by the protective film 130. The protective film 130 formed in a bottom-up manner is a voidless and seamless film. Therefore, when a predetermined treatment is applied to the film 200 to be processed on the substrate W, it is possible to prevent reactive chemical species from reaching the film to be protected 110 located at the bottom of the pattern 101. As a result, the substrate processing method according to this embodiment can reduce the possibility of damage to the film to be protected 110.

[0025] (Type of film on the substrate) The type of protective film 110 in the embodiment is not particularly limited. The protective film 110 may be, for example, a metal-containing film or a carbon-containing film.

[0026] Furthermore, the metal film 120 laminated on the protective film 110 in the embodiment may include, for example, at least one of gallium and gold.

[0027] Furthermore, although the metal film 120 in the embodiment was used as a catalyst for the VLS growth method, a non-metallic catalyst may also be used. For example, carbon can be used as a non-metallic catalyst.

[0028] Furthermore, the type of protective film 130 in the embodiment is not particularly limited. The protective film 130 may be, for example, a carbon film, a silicon film, a metal film, a silicon oxide film, a silicon nitride film, a silicon carbide film, a metal oxide film, a metal nitride film, a metal carbide film, or a laminated film comprising at least two films selected from a set of these films.

[0029] Furthermore, the raw material gas used when forming the protective film 130 by the VLS growth method can be appropriately determined according to the type of protective film 130 to be formed. For example, when forming a carbon film as the protective film 130, a hydrocarbon gas can be used as the raw material gas. Also, for example, when forming a silicon film as the protective film 130, a silane gas can be used.

[0030] Furthermore, when forming an oxide film, nitride film, or carbide film as the protective film 130, the oxidizing gas, nitride gas, or carbide gas may be supplied after supplying the raw material gas. Also, when forming a laminated film in which multiple films are stacked as the protective film 130, different raw material gases corresponding to the multiple films may be supplied sequentially.

[0031] Furthermore, the type of film to be processed 200 in the embodiment is not particularly limited. The film to be processed 200 may be, for example, a silicon oxide film (SiO) or a silicon nitride film (SiN).

[0032] (Types of chemical species used in the prescribed treatment) The type of reactive chemical species used in the predetermined treatment applied to the film 200 to be treated on the substrate W in the embodiment is not particularly limited. If the predetermined treatment is wet etching, the reactive chemical species can be, for example, dilute hydrofluoric acid, phosphoric acid, or nitrate hydrofluoric acid. The reactive chemical species used is appropriately determined according to the combination of the film type of the film 200 to be treated and the film type of the protective film 130. For example, if the film 200 to be treated is a silicon nitride film and the protective film 130 is a silicon oxide film, the reactive chemical species used is phosphoric acid. Also, for example, if the film 200 to be treated is a silicon oxide film and the protective film 130 is a silicon film, the reactive chemical species used is dilute hydrofluoric acid. Furthermore, if the predetermined treatment is dry etching, the reactive chemical species can be, for example, fluorocarbon gas or chlorine-containing gas.

[0033] (An example of a flow chart for a substrate processing method according to a modified embodiment) Figure 10 is a flowchart showing an example of the flow of a substrate processing method according to a modified embodiment. Figures 11 to 16 show an example of the flow of changes in the substrate W due to each step of the substrate processing method according to a modified embodiment. The modification relates to a variation of the step (steps S102 and S103) of laminating a metal film on the protective film 110 in the embodiment.

[0034] First, the substrate W is provided (step S111). The substrate W in the modified example is the same as the substrate W shown in Figure 2.

[0035] Next, a metal film 140 is laminated by ALD on the top and side walls of pattern 101 and on the protective film 110 (step S112, Figure 11). Alternatively, the metal film 140 may be laminated by CVD instead of ALD.

[0036] Next, the portions of the metal film 140 that are laminated on the top and side walls of pattern 101 are removed, leaving the metal film 140 on the protective film 110 (step S113, Figure 12). Specifically, unwanted portions are selectively removed by isotropic dry etching. This allows the metal film 140 to be selectively laminated on the protective film 110. If necessary, CMP or atomic layer etching (ALE) may be applied to the top of pattern 101.

[0037] Next, a protective film 150 is formed within the pattern 101 by a VLS growth method using the metal film 140 as a catalyst, supporting the metal film 140 from below and covering the film to be protected 110 (step S114, Figure 13). The VLS growth method is a technique for growing a film from the bottom up of the pattern 101 by inducing a eutectic reaction between the metal film 140, which is the catalyst film, and the raw material gas. The raw material gas may be supplied together with an inert gas. Furthermore, from the viewpoint of promoting the eutectic reaction between the metal film 140, which is the catalyst film, and the raw material gas, and thereby promoting the growth of the protective film 150, the raw material gas may be supplied under conditions in which plasma or ultraviolet light is irradiated.

[0038] Next, the metal film 140 is removed from the protective film 150 formed within the pattern 101 (step S115, Figure 14). The removal of the metal film 140 is achieved, for example, by dry etching or CMP.

[0039] Next, the film 200 to be treated on the substrate W is subjected to a predetermined treatment (step S116). In a modified example of this embodiment, the predetermined treatment is a treatment in which the film 200 to be treated on the substrate W is exposed to a reactive chemical species and etched by wet etching or dry etching. As a result, the cross-section of the substrate W becomes, for example, the cross-section shown in Figure 15. In other forms, the predetermined treatment may be a treatment of the film 200 to be treated on the substrate W, such as film deposition, modification by plasma irradiation, or doping with doping components.

[0040] Next, the protective film 150 within pattern 101 is removed (step S117, Figure 16), and the process is completed. This is an example of the processing flow of a substrate processing method according to a modified embodiment.

[0041] (Other variations) In the above embodiment, the step of forming the protective films 130 and 150 (steps S104 and S114) may be performed by VLS growth to form the protective films 130 and 150 within the pattern 101 with a film thickness that does not completely embed the pattern 101.

[0042] (Effects of the embodiment) The substrate processing method according to the above embodiment includes steps a), b), c), d), e), and f). Step a) is the step of providing a substrate (e.g., substrate W) having a pattern (e.g., pattern 101) and having a protective film (e.g., protective film 110) located at the bottom of the pattern. Step b) is the step of laminating a catalyst film (e.g., metal films 120, 140) on the protective film located at the bottom of the pattern. Step c) is the step of forming a protective film (e.g., protective films 130, 150) within the pattern by VLS growth, which supports the catalyst film from below and covers the protective film. Step d) is the step of removing the catalyst film supported from below by the protective film. Step e) is the step of performing a predetermined process on a portion of the substrate different from the pattern (e.g., a film to be processed 200) while the protective film is covered by the protective film. Step f) is the step of removing the protective film within the pattern. This reduces the possibility of damage to the protective film located at the bottom of the pattern, according to the embodiment.

[0043] Furthermore, the order of steps d) and e) above is interchangeable. This reduces the possibility of damage to the protective film located at the bottom of the pattern, according to this embodiment.

[0044] Furthermore, step b) may also include steps b-1) and b-2). Step b-1) is a step of modifying the surface of the top of the pattern to form a hydrophobic modified film (e.g., modified film 100a) on the top of the pattern. Step b-2) is a step of supplying a colloidal solution containing a catalyst to the bottom of the pattern with the modified film formed on the top of the pattern, and then laminating a catalyst film on the protective film by volatilizing the solvent of the colloidal solution. Furthermore, in step b-1), the surface of the top of the pattern may be modified by a plasma of a reducing gas or an oxidizing gas. As a result, according to this embodiment, a catalyst film can be selectively laminated on the protective film.

[0045] Furthermore, step b) may also include steps b-3) and b-4). Step b-3) is a step of laminating a catalyst film on the top and side walls of the pattern and on the film to be protected by CVD or ALD. Step b-4) is a step of removing the portion of the catalyst film that is laminated on the top and side walls of the pattern, leaving the catalyst film on the film to be protected. Furthermore, in step b-4), portions of the catalyst film may be selectively removed by isotropic dry etching. Thus, according to this embodiment, the catalyst film can be selectively laminated on the film to be protected.

[0046] Furthermore, in the case of c) above, a protective film may be formed within the pattern by the VLS growth method with a film thickness that does not completely embed the pattern. According to this embodiment, the possibility of damage to the protected film can be reduced, and the amount of raw material gas used for the protective film can be reduced.

[0047] Furthermore, the protective film may be a metal-containing film or a carbon-containing film. According to this embodiment, the possibility of damage to the metal-containing film or carbon-containing film located at the bottom of the pattern can be reduced.

[0048] Furthermore, the catalyst film laminated on the above-mentioned protective film may be a metal film. Such a metal film may also contain at least one of gallium and gold. Thus, according to this embodiment, the protective film can be appropriately formed by a VLS growth method using a metal film as a catalyst.

[0049] Furthermore, the protective film may be a laminated film comprising a carbon film, a silicon film, a metal film, a silicon oxide film, a silicon nitride film, a silicon carbide film, a metal oxide film, a metal nitride film, a metal carbide film, or at least two films selected from a combination of these films. According to this embodiment, the possibility of damage to the protected film located at the bottom of the pattern can be reduced.

[0050] While embodiments have been described above, it should be understood that the embodiments disclosed herein are illustrative and not restrictive in all respects. Indeed, the embodiments described above can be embodied in a variety of forms. Furthermore, the embodiments described above may be omitted, replaced, or modified in various ways without departing from the scope and spirit of the claims.

[0051] Furthermore, the following additional information is disclosed regarding the above embodiments.

[0052] (Note 1) a) A step of providing a substrate having a pattern, wherein the protective film is located at the bottom of the pattern, b) A step of laminating a catalyst film on the protective film located at the bottom of the pattern, c) A step of forming a protective film within the pattern by VLS (Vapor Liquid Solid) growth, which supports the catalyst film from below and covers the film to be protected, d) A step of removing the catalyst film which is supported from below by the protective film, e) A step of performing a predetermined process on a portion of the substrate different from the pattern, while the protective film is covered by the protective film, f) A step of removing the protective film within the pattern A substrate processing method, including the following.

[0053] (Note 2) a) A step of providing a substrate having a pattern, wherein the protective film is located at the bottom of the pattern, b) A step of laminating a catalyst film on the protective film located at the bottom of the pattern, c) A step of forming a protective film within the pattern by VLS growth, which supports the catalyst film from below and covers the film to be protected, d) A step of performing a predetermined process on a portion of the substrate different from the pattern while the protective film is covered by the protective film, e) A step of removing the catalyst film which is supported from below by the protective film, f) A step of removing the protective film within the pattern A substrate processing method, including the following.

[0054] (Note 3) The above b) is, The substrate processing method according to Appendix 1 or 2, wherein the catalyst film is selectively laminated on the protective film located at the bottom of the pattern.

[0055] (Note 4) The above b) is, b-1) A step of modifying the surface of the top of the pattern to form a hydrophobic modified film on the top of the pattern, b-2) A step of laminating the catalyst film on the protective film by supplying a colloidal solution containing the catalyst to the bottom of the pattern with the modified film formed on the top of the pattern, and then volatilizing the solvent of the colloidal solution. A substrate processing method described in any one of the appendices 1 to 3, including the method described in appendices 1 to 3.

[0056] (Note 5) The above b-1) is, The substrate processing method according to Appendix 4, wherein the surface of the top of the pattern is modified by a plasma of a reducing gas or an oxidizing gas.

[0057] (Note 6) The above b) is, b-3) A step of laminating the catalyst film on the top and side walls of the pattern and on the protective film by chemical vapor deposition (CVD) or atomic layer deposition (ALD), b-4) A step of removing the portion of the catalyst film that is laminated on the top and side walls of the pattern, leaving the catalyst film on the protective film. A substrate processing method described in any one of the appendices 1 to 3, including the method described in appendices 1 to 3.

[0058] (Note 7) The above b-4) is, The substrate processing method according to Appendix 6, wherein the portion of the catalyst film is selectively removed by isotropic dry etching.

[0059] (Note 8) The above c) is, A substrate processing method according to any one of the appendices 1 to 7, wherein the protective film is formed within the pattern by the VLS growth method with a thickness that does not completely embed the pattern.

[0060] (Note 9) The substrate processing method according to any one of the appendices 1 to 8, wherein the protective film is a metal-containing film or a carbon-containing film.

[0061] (Note 10) The substrate processing method according to any one of the appendices 1 to 9, wherein the catalyst film is a metal film.

[0062] (Note 11) The substrate processing method according to Appendix 10, wherein the metal film comprises at least one of gallium and gold.

[0063] (Note 12) The substrate processing method according to any one of the appendices 1 to 11, wherein the protective film is a laminated film comprising at least two films selected from a carbon film, a silicon film, a metal film, a silicon oxide film, a silicon nitride film, a silicon carbide film, a metal oxide film, a metal nitride film, a metal carbide film, or a combination of these films. [Explanation of Symbols]

[0064] 100 insulating film 100a Modified film 101 patterns 110 Protected film 120, 140 Metal film 130, 150 Protective film 200 Films to be processed W board

Claims

1. a) A step of providing a substrate having a pattern, wherein the protective film is located at the bottom of the pattern, b) A step of laminating a catalyst film on the protective film located at the bottom of the pattern, c) A step of forming a protective film within the pattern by the VLS (Vapor Liquid Solid) growth method, which supports the catalyst film from below and covers the film to be protected, d) A step of removing the catalyst film which is supported from below by the protective film, e) A step of performing a predetermined process on a portion of the substrate different from the pattern while the protective film is covered by the protective film, f) A step of removing the protective film within the pattern A substrate processing method, including the following.

2. a) A step of providing a substrate having a pattern, wherein the protective film is located at the bottom of the pattern, b) A step of laminating a catalyst film on the protective film located at the bottom of the pattern, c) A step of forming a protective film within the pattern by the VLS growth method, which supports the catalyst film from below and covers the film to be protected, d) A step of performing a predetermined treatment on a portion of the substrate different from the pattern while the protective film is covered by the protective film, e) A step of removing the catalyst film which is supported from below by the protective film, f) A step of removing the protective film within the pattern A substrate processing method, including the following.

3. The above b) is, The substrate processing method according to claim 1, wherein the catalyst film is selectively laminated on the protective film located at the bottom of the pattern.

4. The above b) is, b-1) A step of modifying the surface of the top of the pattern to form a hydrophobic modified film on the top of the pattern, b-2) A step of laminating the catalyst film on the protective film by supplying a colloidal solution containing the catalyst to the bottom of the pattern with the modified film formed on the top of the pattern, and then volatilizing the solvent of the colloidal solution. The substrate processing method according to claim 1, including the method described in claim 1.

5. The above b-1) is, The substrate processing method according to claim 4, wherein the surface of the top of the pattern is modified by a plasma of a reducing gas or an oxidizing gas.

6. The above b) is, b-3) A step of laminating the catalyst film on the top and side walls of the pattern and on the protective film by chemical vapor deposition (CVD) or atomic layer deposition (ALD), b-4) A step of removing the portion of the catalyst film that is laminated on the top and side walls of the pattern, leaving the catalyst film on the protective film. The substrate processing method according to claim 1, including the method described in claim 1.

7. The above b-4) is, The substrate processing method according to claim 6, wherein the portion of the catalyst film is selectively removed by isotropic dry etching.

8. The above c) is, The substrate processing method according to claim 1, wherein the protective film is formed within the pattern by the VLS growth method with a thickness that does not completely embed the pattern.

9. The substrate processing method according to claim 1, wherein the protective film is a metal-containing film or a carbon-containing film.

10. The substrate processing method according to claim 1, wherein the catalyst film is a metal film.

11. The substrate processing method according to claim 10, wherein the metal film comprises at least one of gallium and gold.

12. The substrate processing method according to claim 1, wherein the protective film is a laminated film comprising at least two films selected from a carbon film, a silicon film, a metal film, a silicon oxide film, a silicon nitride film, a silicon carbide film, a metal oxide film, a metal nitride film, a metal carbide film, or a set of these films.

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