Vapor deposition apparatus, program, recording medium, and vapor deposition method

Abstract

To provide a vapor deposition apparatus that improves precision of a location, a shape, etc., of a vapor deposition layer formed on a substrate.SOLUTION: A vapor deposition apparatus 10 comprises a mask 20 which includes an emission surface 202 facing a substrate 110 and an incidence surface 201 located on the opposite side from the emission surface 202, a vapor deposition source 6 which houses a vapor deposition material 7, a vaporization device 8 which vaporizes the vaporization material 7 to generate a vaporized material 7F, and a guide device 70 which guides the vaporized material 7F to the incidence surface 201. The mask 20 includes two or more cells, each cell includes a plurality of through holes 41, and the guide device 70 comprises a nozzle 71 including a tip 711 facing the incidence surface 201 and a rear end 712, and a movement unit 76 moving the tip 711 in a direction parallel with the incidence surface 201.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] Embodiments of the present disclosure relate to a vapor deposition apparatus, a program, a recording medium, and a vapor deposition method.

Background Art

[0002] As a method for forming a precise pattern, a vapor deposition method is known. In the vapor deposition method, first, a mask having holes is combined with a substrate. Subsequently, a vapor deposition material is attached to the substrate through the holes of the mask. Thereby, a vapor deposition layer containing the vapor deposition material can be formed on the substrate in a pattern corresponding to the pattern of the holes of the mask. The vapor deposition method is used, for example, as a method for forming pixels of an organic EL display device. For example, Patent Document 1 proposes forming a vapor deposition layer on the surface of a wafer by the vapor deposition method.

[0003] The larger the incident angle of the vapor deposition material with respect to the substrate, the smaller the thickness of the vapor deposition layer formed on the substrate per unit time. The incident angle is the angle formed by the flying direction of the vapor deposition material with respect to the normal direction of the substrate. The larger the area of the substrate compared to the distance between the vapor deposition source and the substrate, the larger the difference in the incident angle depending on the position on the substrate. As a result, the difference in the thickness of the vapor deposition layer depending on the position on the substrate becomes larger. In order to solve such a problem, in Patent Document 1, it is proposed to perform the vapor deposition method while rotating the substrate in a state where the substrate is arranged so that the vapor deposition source and the center of the substrate do not overlap.

Prior Art Documents

Patent Documents

[0004]

Patent Document 1

Summary of the Invention

Problems to be Solved by the Invention

[0005] Rotating the substrate can change the relative position of the mask to the substrate. For example, the rotation may cause vibrations in both the substrate and the mask, leading to a change in the mask's position. A change in the mask's position can reduce the accuracy of the position and shape of the vapor-deposited layer formed on the substrate. [Means for solving the problem]

[0006] A vapor deposition apparatus according to one embodiment of the present disclosure may include a mask having an exit surface facing the substrate and an entrance surface located opposite the exit surface; a vapor deposition source for containing the vapor deposition material; a vaporization device for vaporizing the vapor deposition material to produce a vaporized material; and a guide device for guiding the vaporized material to the entrance surface. The mask may include two or more cells. The cells may include a plurality of through holes. The guide device may include a nozzle having a front end facing the entrance surface and a rear end; and a moving unit for moving the front end in a direction parallel to the entrance surface. [Effects of the Invention]

[0007] According to the embodiments of this disclosure, it is possible to suppress variations in the thickness of the deposited layer depending on its position on the substrate. [Brief explanation of the drawing]

[0008] [Figure 1A] This is a cross-sectional view showing an example of an organic device. [Figure 1B] This is a plan view showing an example of an organic device group. [Figure 2] This is a cross-sectional view showing an example of a vapor deposition apparatus. [Figure 3A] This is a plan view showing an example of a mask as seen from the side of the incident surface. [Figure 3B] This is a plan view showing one modified example of a mask as seen from the side of the incident surface. [Figure 3C] This is a plan view showing one modified example of a mask as seen from the side of the incident surface. [Figure 4] This is a plan view showing an example of a mask as seen from the exit surface. [Figure 5] It is a cross-sectional view taken along the V-V line of the mask in FIG. 4. [Figure 6] It is a cross-sectional view showing an example of the second layer. [Figure 7] It is a cross-sectional view showing an example of the guide device. [Figure 8] It is a cross-sectional view showing an example of the first nozzle. [Figure 9] It is a cross-sectional view showing an example of a method for manufacturing a mask. [Figure 10] It is a cross-sectional view showing an example of a method for manufacturing a mask. [Figure 11] It is a cross-sectional view showing an example of a method for manufacturing a mask. [Figure 12] It is a cross-sectional view showing an example of a method for manufacturing a mask. [Figure 13] It is a cross-sectional view showing an example of a method for manufacturing a mask. [Figure 14] It is a cross-sectional view showing an example of a method for manufacturing a mask. [Figure 15A] It is a cross-sectional view showing an example of the first deposition process. [Figure 15B] It is a plan view showing an example of the first deposition process. [Figure 16] It is a cross-sectional view showing an example of the second movement process. [Figure 17A] It is a cross-sectional view showing an example of the second deposition process. [Figure 17B] It is a plan view showing an example of the second deposition process. [Figure 18] It is a cross-sectional view showing the first reference example of the deposition apparatus. <00​​​​​​​​​​​​​​​​​​This is a cross-sectional view showing an example of a vapor deposition apparatus. [Modes for carrying out the invention]

[0009] In this specification and these drawings, unless otherwise specified, terms such as "substrate," "base material," "plate," "sheet," and "film," which refer to the material that forms the basis of a certain structure, are not distinguished from one another solely on the basis of differences in designation.

[0010] In this specification and these drawings, unless otherwise specified, terms that identify shapes, geometric conditions, and their degrees, such as "parallel" and "orthogonal," as well as values ​​of lengths and angles, should be interpreted not strictly, but to include a range in which similar functionality can be expected.

[0011] In this specification and these drawings, unless otherwise specified, when a component or region is described as being "on top of," "below," "upper side," "lower side," or "upward" or "downward" of another component or region, this includes cases where one component is in direct contact with another. It also includes cases where another component is located between one component and another, i.e., indirectly in contact. Unless otherwise specified, the terms "on top," "upper side," or "upward," or "down," "lower side," or "downward," may be used in reverse order of their vertical direction.

[0012] In this specification and these drawings, unless otherwise specified, identical or similarly functioning parts are denoted by the same or similar reference numerals, and repeated descriptions may be omitted. Furthermore, the dimensional ratios in the drawings may differ from the actual ratios for illustrative purposes, and some components may be omitted from the drawings.

[0013] Unless otherwise specified in this specification and these drawings, one embodiment of this specification may be combined with other embodiments to the extent that it does not conflict with the other embodiments. Furthermore, other embodiments may be combined with each other to the extent that it does not conflict with the other embodiments.

[0014] In this specification and these drawings, unless otherwise specified, when disclosing multiple steps in a method such as a manufacturing method, other steps not disclosed may be performed between the disclosed steps. Furthermore, the order of the disclosed steps is arbitrary as long as it does not create a contradiction.

[0015] In this specification and these drawings, unless otherwise specified, a numerical range represented by the symbol "~" includes the numbers before and after the symbol "~". For example, the numerical range defined by the expression "34~38 mass%" is the same as the numerical range defined by the expression "34 mass% or more and 38 mass% or less".

[0016] One embodiment of this specification describes a vapor deposition apparatus used to form layers, such as the organic layer of an organic EL display device, on a substrate. The vapor deposition apparatus of this embodiment can also be used to manufacture organic devices other than organic EL display devices. For example, the vapor deposition apparatus of this embodiment may be used to form layers for devices that display or project images or videos for representing virtual reality (VR) or augmented reality (AR). The vapor deposition apparatus of this embodiment may also be used to form layers for display devices other than organic EL display devices, such as electrodes for liquid crystal display devices. Furthermore, the vapor deposition apparatus of this embodiment may be used to form layers for organic devices other than display devices, such as electrodes for pressure sensors.

[0017] A first aspect of this disclosure is a vapor deposition apparatus for depositing a vapor deposition material onto a substrate, A mask including an exit surface facing the substrate and an incident surface located on the opposite side of the exit surface, A vapor deposition source containing the vapor deposition material, A vaporization apparatus that vaporizes the aforementioned deposition material to produce a vaporized material, The system includes a guide device for guiding the vaporized material to the incident surface, The aforementioned mask includes two or more cells, The cell includes a plurality of through holes, The guide device is a vapor deposition apparatus comprising a nozzle including a front end facing the incident surface and a rear end, and a moving unit for moving the front end in a direction parallel to the incident surface.

[0018] A second aspect of the present disclosure is the deposition apparatus according to the first aspect described above, wherein the tip may surround at least one of the cells in a plan view.

[0019] A third aspect of this disclosure is the deposition apparatus according to the second aspect described above, wherein the tip may surround four or fewer cells in a plan view.

[0020] A fourth aspect of the present disclosure is an evaporation apparatus according to each of the first to third aspects described above, wherein the moving unit may deform the nozzle so that the tip moves.

[0021] A fifth aspect of this disclosure is the deposition apparatus according to each of the first to fourth aspects described above, wherein the nozzle may include an elastomer.

[0022] A sixth aspect of the present disclosure is an evaporation apparatus according to each of the first to fifth aspects described above, wherein the nozzle may have a first opening dimension at its tip, and the ratio of the length of the nozzle to the first opening dimension may be 10 or more.

[0023] A seventh aspect of the present disclosure is an evaporation apparatus according to each of the first to third aspects described above, wherein the nozzle may include a first nozzle including a first end and a second end that constitute the tip, and a second nozzle including a third end and a fourth end connected to the second end.

[0024] An eighth aspect of the present disclosure is an evaporation apparatus according to the seventh aspect described above, wherein the moving unit may deform the second nozzle so that the first nozzle moves in a direction parallel to the incident surface.

[0025] A ninth aspect of the present disclosure is that, in the deposition apparatus according to the seventh or eighth aspect described above, the rigidity of the second nozzle may be lower than that of the first nozzle.

[0026] A tenth aspect of the present disclosure is an evaporation apparatus according to each of the seventh to ninth aspects described above, wherein the second nozzle may have a third opening dimension at the third end, and the ratio of the length of the second nozzle to the third opening dimension may be 10 or more.

[0027] An eleventh aspect of the present disclosure is an evaporation apparatus according to each of the seventh to tenth aspects described above, wherein the first nozzle may have a central axis extending parallel to the direction normal to the incident surface.

[0028] A twelfth aspect of the present disclosure is an evaporation apparatus according to each of the seventh to eleventh aspects described above, wherein the first nozzle may have a first aperture dimension at the first end, and the first nozzle may have a second aperture dimension at the second end that is larger than the first aperture dimension.

[0029] A thirteenth aspect of this disclosure is an evaporation apparatus according to each of the first to twelfth aspects described above, wherein the guide apparatus may include a heating unit for heating the nozzle.

[0030] A fourteenth aspect of this disclosure is an evaporation apparatus according to each of the first to thirteenth aspects described above, wherein the guide device may include a shutter for closing the nozzle.

[0031] A fifteenth aspect of the present disclosure is an evaporation apparatus according to each of the first to fourteenth aspects described above, wherein the guide device may include a control unit for controlling the moving unit, and the control unit may control the moving unit so that a first moving step, a first evaporation step, a second moving step, and a second evaporation step are performed. The first moving step may move the tip to a first position. The first evaporation step may deposit evaporation material onto the substrate via the first cell at the first position. The second moving step may move the tip to a second position. The second evaporation step may deposit evaporation material onto the substrate via the second cell at the second position.

[0032] A sixteenth aspect of this disclosure is a program for causing a computer to function as the control unit of the deposition apparatus according to the fifteenth aspect described above.

[0033] A 17th aspect of this disclosure is a computer-readable, non-transient recording medium on which the program according to the 16th aspect described above is recorded.

[0034] An eighteenth aspect of this disclosure is a deposition method for depositing a deposition material onto a substrate using a deposition apparatus according to the first aspect described above, A first movement step of moving the tip to a first position, A first deposition step of depositing a deposition material onto the substrate via the first cell at the first position, A second movement step involves moving the aforementioned tip to a second position, The deposition method comprises a second deposition step of depositing a deposition material onto the substrate via the second cell at the second position.

[0035] A 19th aspect of the present disclosure is a deposition method according to the 18th aspect described above, wherein the deposition method may include a closing step of closing the nozzle between the first deposition step and the second deposition step.

[0036] A 20th aspect of the present disclosure is a deposition method according to the 18th or 19th aspect described above, wherein the mask comprises: a first layer including a first mask surface located on the incident surface, a second mask surface located on the opposite side of the first mask surface, and at least one opening penetrating from the first mask surface to the second mask surface; and a second layer including a third mask surface facing the second mask surface, a fourth mask surface located on the opposite side of the third mask surface, and a plurality of through holes penetrating from the third mask surface to the fourth mask surface and overlapping the opening in a plan view.

[0037] Embodiments of this disclosure will be described in detail with reference to the drawings. Note that the embodiments described below are examples of embodiments of this disclosure, and this disclosure is not to be construed as being limited to these embodiments only.

[0038] The organic device 100 will now be described. The organic device 100 comprises elements formed by using a vapor deposition apparatus. Figure 1A is a cross-sectional view showing an example of the organic device 100.

[0039] The organic device 100 includes a substrate 110 and a plurality of elements 115 arranged along the in-plane direction of the substrate 110. The substrate 110 includes a first surface 111 and a second surface 112 located opposite the first surface 111. The elements 115 are located on the first surface 111. The elements 115 are, for example, pixels. The organic device 100 may include two or more types of elements 115. For example, the organic device 100 may include a first element 115A and a second element 115B. Although not shown, the organic device 100 may also include a third element. The first element 115A, the second element 115B, and the third element are, for example, red pixels, blue pixels, and green pixels.

[0040] The element 115 may include a first electrode 120, an organic layer 130 located on the first electrode 120, and a second electrode 140 located on the organic layer 130. The element formed by using a vapor deposition apparatus is, for example, the organic layer 130. The element formed by using a mask is also called a vapor deposition layer.

[0041] The organic device 100 may include an insulating layer 160. The insulating layer 160 is located between two adjacent first electrodes 120 in a plan view. The insulating layer 160 contains, for example, polyimide. The insulating layer 160 may overlap the edges of the first electrodes 120. "Plan view" means viewing the object along the direction normal to the surface of a plate member such as a substrate 110 or a mask.

[0042] The organic device 100 may be an active-matrix type. For example, although not shown in the figures, the organic device 100 may include switches electrically connected to each of the multiple elements 115. The switches are, for example, transistors. The switches can control the ON / OFF state of voltage or current to the corresponding element 115.

[0043] The substrate 110 may be an insulating material. The material of the substrate 110 may be a rigid material or a flexible material. Rigid materials are materials with poor flexibility, such as silicon, quartz glass, Pyrex® glass, and synthetic quartz plates. Flexible materials are materials with flexibility, such as resin films, optical resin plates, and thin glass.

[0044] The element 115 is configured to perform some function when a voltage is applied between the first electrode 120 and the second electrode 140, or when a current flows between the first electrode 120 and the second electrode 140. For example, if the element 115 is a pixel of an organic EL display device, the element 115 can emit light that constitutes an image.

[0045] The first electrode 120 includes a conductive material. For example, the first electrode 120 includes metals, conductive metal oxides, and other conductive inorganic materials. The first electrode 120 may also include transparent and conductive metal oxides such as indium tin oxide and indium zinc oxide.

[0046] The organic layer 130 contains an organic material. When an electric current flows through the organic layer 130, the organic layer 130 can perform some function. The organic layer 130 can be a light-emitting layer that emits light in response to an electric current, for example. The organic layer 130 may also contain an organic semiconductor material. The properties of the organic layer 130, such as its transmittance and refractive index, may be adjusted as appropriate.

[0047] As shown in Figure 1A, the organic layer 130 may include a first organic layer 130A and a second organic layer 130B. The first organic layer 130A is included in the first element 115A. The second organic layer 130B is included in the second element 115B. Although not shown, the organic layer 130 may also include a third organic layer included in the third element. The first organic layer 130A, the second organic layer 130B, and the third organic layer are, for example, a red light-emitting layer, a blue light-emitting layer, and a green light-emitting layer.

[0048] When a voltage is applied between the first electrode 120 and the second electrode 140, a current flows through the organic layer 130. If the organic layer 130 is a light-emitting layer, light is emitted from the organic layer 130 and extracted to the outside from either the second electrode 140 side or the first electrode 120 side.

[0049] The organic layer 130 may further include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, and the like.

[0050] The second electrode 140 contains a conductive material such as a metal. Platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, chromium, indium tin oxide (ITO), indium zinc oxide (IZO), carbon, etc., can be used as the material for the second electrode 140. These materials may be used individually or in combination of two or more. When using two or more materials, layers made of each material may be laminated. Alternatively, alloys containing two or more materials may be used. For example, magnesium alloys such as MgAg, and aluminum alloys such as AlLi, AlCa, and AlMg can be used. MgAg is also referred to as magnesium silver. Magnesium silver is preferably used as the material for the second electrode 140. Alloys of alkali metals and alkaline earth metals may also be used. For example, lithium fluoride, sodium fluoride, potassium fluoride, etc., may be used.

[0051] The second electrode 140 may be a common electrode. For example, the second electrode 140 of one element 115 may be electrically connected to the second electrode 140 of another element 115. The second electrode 140 may be formed on the organic layer 130 by a vapor deposition method using a vapor deposition apparatus.

[0052] In the method for manufacturing the organic device 100, a group of organic devices 102 as shown in Figure 1B may be manufactured. The group of organic devices 102 includes two or more organic devices 100. For example, the group of organic devices 102 may include organic devices 100 arranged in a first direction D1 and a second direction D2. The second direction D2 is a direction that intersects the first direction D1. The second direction D2 may be perpendicular to the first direction D1. A common substrate 110 may be used for two or more organic devices 100. For example, the group of organic devices 102 may be located on a single substrate 110 and include layers such as a first electrode 120, an organic layer 130, and a second electrode 140 that constitute two or more organic devices 100. By dividing the group of organic devices 102, an organic device 100 can be obtained.

[0053] As shown in Figure 1B, the substrate 110 may have a planar shape similar to that of a silicon wafer used in semiconductor manufacturing. In this case, the substrate 110 can be processed using equipment that performs semiconductor manufacturing processes. For example, a first electrode 120, an insulating layer 160, etc., can be formed on the substrate 110 using equipment that performs semiconductor manufacturing processes.

[0054] Next, a method for forming the organic layer 130 on the substrate 110 by vapor deposition will be described. Figure 2 is a cross-sectional view showing an example of a vapor deposition apparatus 10. The vapor deposition apparatus 10 performs a vapor deposition process in which a vapor deposition material is deposited onto the substrate 110.

[0055] As shown in Figure 2, the deposition apparatus 10 may include a chamber 9, a mask 20 located inside the chamber 9, a deposition source 6, a vaporizer 8, and a guide device 70. The deposition apparatus 10 may also include an exhaust means for creating a vacuum atmosphere inside the chamber 9. The deposition source 6 is, for example, a crucible. The deposition source 6 contains a deposition material 7, such as an organic material. The vaporizer 8 vaporizes the deposition material. The vaporizer 8 is, for example, a heater. The heater vaporizes the deposition material 7 under a vacuum atmosphere by heating the deposition source 6. The vaporized deposition material 7 is also called the vaporized material and is denoted by the symbol 7F.

[0056] The mask 20 includes an incident surface 201, an exit surface 202, and a through hole 41. The exit surface 202 faces the first surface 111 of the substrate 110. The vaporized material 7F emitted from the exit surface 202 adheres to the first surface 111 of the substrate 110. The incident surface 201 is located on the opposite side of the exit surface 202. The exit surface 202 may or may not be in contact with the first surface 111 of the substrate 110.

[0057] Although not shown in the figures, the deposition apparatus 10 may be equipped with a magnet placed on the second surface 112. If the mask 20 contains a metallic material, the magnet can pull the mask 20 toward the substrate 110 by magnetic force. This can reduce or eliminate the gap between the mask 20 and the substrate 110. This can suppress the occurrence of shadows during the deposition process. In this application, a shadow is a phenomenon in which the thickness of the organic layer 130 formed near the wall surface of the through hole 41 is smaller than the thickness of the organic layer 130 formed at the center of the through hole 41. Shadows are caused by the deposition material 7 adhering to the wall surface of the mask 20, the deposition material 7 entering the gap between the mask 20 and the substrate 110, etc.

[0058] The guide device 70 guides the vaporized material 7F from the deposition source 6 to the incident surface 201. The guide device 70 may also include a nozzle 71. By using the nozzle 71, the vaporized material 7F can be guided to a specific area of ​​the incident surface 201.

[0059] In Figure 2, the symbol L1 represents the distance in the third direction D3 between the deposition material 7 contained in the deposition source 6 and the first surface 111 of the substrate 110. The third direction D3 is parallel to the normal direction of the incident surface 201. By using the nozzle 71, the distance L1 can be determined more freely.

[0060] The nozzle 71 includes a tip 711 and a rear end 712. The tip 711 may face the incident surface 201. For example, the tip 711 may face the incident surface 201 in a third direction D3. The rear end 712 is positioned so that the vaporized material 7F enters the interior of the nozzle 71 from the rear end 712. The rear end 712 may be configured to surround the deposition material 7 contained in the deposition source 6 in a plan view. In the description of the deposition apparatus 10, "plan view" means viewing the object along the direction normal to the incident surface 201.

[0061] The tip 711 is movable relative to the mask 20. For example, as will be described later, the tip 711 can move relative to the mask 20 by deformation of a part of the nozzle 71. The rear end 712 may or may not be movable. For example, the position of the rear end 712 relative to the deposition source 6 may remain constant during the deposition process.

[0062] The nozzle 71 includes an inner surface 715 and an outer surface 716. The vaporized material 7F is repeatedly reflected by the inner surface 715 as it moves towards the tip 711. Therefore, the vaporized material 7F exiting the tip 711 can contain velocity components in various directions.

[0063] The nozzle 71 may include a deformable portion. For example, the nozzle 71 may be partially bendable. This allows the tip 711 to move relative to the mask 20 in a direction parallel to the incident surface 201. For example, the nozzle 71 may include a first nozzle 72 and a deformable second nozzle 74. The second nozzle 74 is connected to the first nozzle 72. The first nozzle 72 includes a tip 711. The second nozzle 74 may include a rear end 712. The first nozzle 72 may be replaced depending on the size of the cell 44.

[0064] The moving unit 76 moves the tip 711 in a direction parallel to the incident surface 201. For example, the moving unit 76 applies force to the outer surface 716 of the deformable portion of the nozzle 71. For example, the moving unit 76 applies force to the outer surface of the second nozzle 74 in a direction parallel to the incident surface 201. This changes the angle of bending in the second nozzle 74. As a result, the first nozzle 72 connected to the second nozzle 74 moves. The moving unit 76 may also be movable in directions other than parallel to the incident surface 201.

[0065] The guide device 70 may include a shutter 77. The shutter 77 can close the nozzle 71. The shutter 77 may be located at the tip 711. Providing the shutter 77 makes it easier to control the thickness of the deposited layer.

[0066] The guide device 70 may include a control unit that controls the operation of its components. The control unit may control the position, timing of movement, and speed of movement of the moving unit 76, shutter 77, etc.

[0067] The functions of the control unit may be implemented by software running on a computer, such as a personal computer. For example, by installing a program on the computer, the computer may function as the control unit.

[0068] The program may be pre-installed on the computer at the time of shipment, or it may be installed on the computer after shipment by using a non-transient recording medium that is readable by the computer and on which the program is recorded. The type of recording medium is not particularly limited and various types are possible, such as portable recording media like magnetic disks and optical disks, and fixed recording media like hard disk drives and memory. The program may also be distributed via a communication line such as the Internet. When the program is distributed via a communication line, the server for distribution will have a recording medium on which the program according to this embodiment is stored, at least temporarily.

[0069] Next, the mask 20 will be described in detail. Figure 3A is a plan view showing an example of the mask 20 as seen from the side of the incident surface 201. Figure 4 is a plan view showing an example of the mask 20 as seen from the side of the exit surface 202. Figure 5 is a cross-sectional view of the mask 20 in Figure 3A along the VV line.

[0070] As shown in Figure 5, the mask 20 comprises a first layer 30 and a second layer 40 arranged sequentially from the incident surface 201 toward the exit surface 202. The first layer 30 may contain silicon or a silicon compound. A silicon compound is, for example, silicon carbide (SiC). The second layer 40 may contain a metallic material. The mask 20 may also include an intermediate layer 50 located between the first layer 30 and the second layer 40. Each layer will be described below.

[0071] The first layer 30 includes a first mask surface 301, a second mask surface 302, an opening 31, and a first wall surface 32. The first mask surface 301 is located on the incident surface 201. The first mask surface 301 may constitute the incident surface 201. The second mask surface 302 is located on the opposite side of the first mask surface 301.

[0072] The opening 31 penetrates from the first surface 301 of the mask to the second surface 302 of the mask. As shown in Figure 3A, the first layer 30 may include a plurality of openings 31. The plurality of openings 31 may be aligned in the first direction D1 and the second direction D2. The second direction D2 may be perpendicular to the first direction D1. The first direction D1 and the second direction D2 may be perpendicular to the third direction D3 described above.

[0073] The aperture 31 may correspond to one screen of the organic EL display device. The mask 20 shown in Figure 3A can simultaneously form patterns of organic layers corresponding to multiple screens on the substrate 110. As shown in Figure 3A, the aperture 31 may have a rectangular contour in plan view. Plan view means, for example, viewing the object along the normal direction of the first surface 301 of the mask.

[0074] Figures 3B and 3C are plan views showing other examples of the mask 20, respectively. As shown in Figure 3B, the corners of the contour of the opening 31 may include curves. As shown in Figure 3C, the contour of the opening 31 may be octagonal. According to the examples shown in Figures 3B and 3C, when stress is applied to the contour of the opening 31, it is possible to suppress the concentration of stress at the corners. This prevents the first layer 30 from being damaged.

[0075] The first wall surface 32 is the surface of the first layer 30 facing the opening 31. In the example shown in Figure 5, the first wall surface 32 extends along the normal direction D3 of the first mask surface 301.

[0076] As shown in Figure 3A, the region of the first layer 30 in which no openings 31 are formed may be divided into an outer region 35 and an inner region 36. The inner region 36 is the region located between two adjacent openings 31 in a plan view. The outer region 35 is the region located between the outer edge 303 of the first layer 30 and the openings 31 in a plan view. As shown in Figure 3A, the inner region 36 may include a portion extending in a first direction D1 and a portion extending in a second direction D2.

[0077] As shown in Figures 3A and 4, the first layer 30 may include alignment marks 39. The alignment marks 39 are formed, for example, on the second surface 302 of the mask. The alignment marks 39 may also be formed on the first surface 301 of the mask. The alignment marks 39 are used, for example, to adjust the relative position of the substrate 110 with respect to the mask 20. If the substrate 110 is transparent to visible light, the alignment marks 39 can be seen through the substrate 110.

[0078] As shown in Figures 3A and 4, the alignment mark 39 may have a cross-shaped contour in plan view. Although not shown, the alignment mark 39 may have a contour other than a cross, such as a rectangle or a circle. The alignment mark 39 may be located in the outer region 35 or in the inner region 36. The alignment mark 39 may be positioned to coincide with a straight line passing through the center point of the first layer 30 in plan view. In the example in Figure 3A, the alignment mark 39 coincides with the center line CL1 extending in the first direction D1. If the first layer 30 is a silicon wafer, the center point may be the center point of a circle that coincides with the contour of the silicon wafer.

[0079] The cross-sectional structure of alignment mark 39 is arbitrary. For example, the alignment mark 39 may include a recess located on the first surface 301 of the mask or the second surface 302 of the mask. The alignment mark 39 may also include a hole penetrating from the first surface 301 of the mask to the second surface 302 of the mask. The recess and hole may be formed by etching the first surface 301 of the mask or the second surface 302 of the mask. The recess and hole may also be formed by irradiating the first surface 301 of the mask or the second surface 302 of the mask with a laser. For example, the alignment mark 39 may include a layer located on the first surface 301 of the mask or the second surface 302 of the mask. The layer is formed of a different material than the first layer 30. If a layer is formed on the second surface 302 of the mask, the second layer 40 and the intermediate layer 50 may include through holes that overlap the layers. This can improve the visibility of the alignment mark 39. Alignment marks 39 may be formed on layers other than the first layer 30.

[0080] The first layer 30 is fabricated, for example, by processing a silicon wafer. As shown in Figure 3A, the outer edge 303 of the first layer 30 may include a linear portion. The linear portion is also called an orientation flat. Although not shown, a notch may be formed in the outer edge 303. The notch is also called a notch. The orientation flat and notch represent the crystal orientation of the silicon wafer.

[0081] The maximum dimension S1 of the first layer 30 in plan view may be, for example, 100 mm or more, 150 mm or more, or 200 mm or more. Dimension S1 may also be, for example, 300 mm or less, 400 mm or less, or 500 mm or less. The range of dimension S1 may be defined by a first group consisting of 100 mm, 150 mm, and 200 mm, and / or a second group consisting of 300 mm, 400 mm, and 500 mm. The range of dimension S1 may also be defined by a combination of any one value from the first group and any one value from the second group. The range of dimension S1 may also be defined by a combination of any two values ​​from the first group. The range of dimension S1 may also be defined by a combination of any two values ​​from the second group. Dimension S1 may be, for example, 100mm or more and 500mm or less, 100mm or more and 400mm or less, 100mm or more and 300mm or less, 100mm or more and 200mm or less, 100mm or more and 150mm or less, 150mm or more and 500mm or less, 150mm or more and 400mm or less, 150mm or more and 300mm or less, 150mm or more and 200mm or less, 200mm or more and 500mm or less, 200mm or more and 400mm or less, 200mm or more and 300mm or less, 300mm or more and 500mm or less, 300mm or more and 400mm or less, or 400mm or more and 500mm or less.

[0082] The dimension S2 of the opening 31 in the direction in which the openings 31 are aligned may be, for example, 5 mm or more, 10 mm or more, or 20 mm or more. The dimension S2 may be, for example, 30 mm or less, 50 mm or less, or 100 mm or less. The range of dimension S2 may be defined by a first group consisting of 5 mm, 10 mm, and 20 mm, and / or a second group consisting of 30 mm, 50 mm, and 100 mm. The range of dimension S2 may be defined by a combination of any one value included in the first group and any one value included in the second group. The range of dimension S2 may be defined by a combination of any two values ​​included in the first group. The range of dimension S2 may be defined by a combination of any two values ​​included in the second group. Dimension S2 may be, for example, 5mm or more and 100mm or less, 5mm or more and 50mm or less, 5mm or more and 30mm or less, 5mm or more and 20mm or less, 5mm or more and 10mm or less, 10mm or more and 100mm or less, 10mm or more and 50mm or less, 10mm or more and 30mm or less, 10mm or more and 20mm or less, 20mm or more and 100mm or less, 20mm or more and 50mm or less, 20mm or more and 30mm or less, 30mm or more and 100mm or less, 30mm or more and 50mm or less, or 50mm or more and 100mm or less.

[0083] The spacing S3 between two openings 31 in the direction in which the openings 31 are aligned may be, for example, 0.1 mm or more, 0.5 mm or more, or 1.0 mm or more. The spacing S3 may be, for example, 10 mm or less, 15 mm or less, or 20 mm or less. The range of the spacing S3 may be defined by a first group consisting of 0.1 mm, 0.5 mm, and 1.0 mm, and / or a second group consisting of 10 mm, 15 mm, and 20 mm. The range of the spacing S3 may be defined by a combination of any one value included in the first group and any one value included in the second group. The range of the spacing S3 may be defined by a combination of any two values ​​included in the first group. The range of the spacing S3 may be defined by a combination of any two values ​​included in the second group. The spacing S3 may be, for example, 0.1 mm or more and 20 mm or less, 0.1 mm or more and 15 mm or less, 0.1 mm or more and 10 mm or less, 0.1 mm or more and 1.0 mm or less, 0.1 mm or more and 0.5 mm or less, 0.5 mm or more and 20 mm or less, 0.5 mm or more and 15 mm or less, 0.5 mm or more and 10 mm or less, 0.5 mm or more and 1.0 mm or less, 1.0 mm or more and 20 mm or less, 1.0 mm or more and 15 mm or less, 1.0 mm or more and 10 mm or less, 10 mm or more and 20 mm or less, 10 mm or more and 15 mm or less, or 15 mm or more and 20 mm or less.

[0084] The thickness of the first layer 30 is defined as the maximum thickness T1 of the outer region 35. The thickness T1 may be, for example, 50 μm or more, 100 μm or more, or 200 μm or more. The thickness T1 may be, for example, 400 μm or less, 700 μm or less, or 1000 μm or less. The range of thickness T1 may be defined by a first group consisting of 50 μm, 100 μm and 200 μm, and / or a second group consisting of 400 μm, 700 μm and 1000 μm. The range of thickness T1 may be defined by a combination of any one value from the first group and any one value from the second group. The range of thickness T1 may be defined by a combination of any two values ​​from the first group. The range of thickness T1 may be defined by a combination of any two values ​​from the second group. The thickness T1 may be, for example, 50 μm or more and 1000 μm or less, 50 μm or more and 700 μm or less, 50 μm or more and 400 μm or less, 50 μm or more and 200 μm or less, 50 μm or more and 100 μm or less, 100 μm or more and 1000 μm or less, 100 μm or more and 700 μm or less, 100 μm or more and 400 μm or less, 100 μm or more and 200 μm or less, 200 μm or more and 1000 μm or less, 200 μm or more and 700 μm or less, 200 μm or more and 400 μm or less, 400 μm or more and 1000 μm or less, 400 μm or more and 700 μm or more and 1000 μm or less.

[0085] Next, the second layer 40 will be described. The second layer 40 includes a third mask surface 401, a fourth mask surface 402, and a plurality of through holes 41. The third mask surface 401 faces the second mask surface 302 of the first layer 30. The fourth mask surface 402 is located on the opposite side of the third mask surface 401.

[0086] The through-holes 41 penetrate from the third surface 401 of the mask to the fourth surface 402 of the mask. One through-hole 41 corresponds to one organic layer 130. A group of regularly arranged through-holes 41 corresponds to one screen of the organic EL display device. As shown in Figures 3A and 4, a group of regularly arranged through-holes 41 may overlap a single opening 31 in a plan view. The groups of through-holes 41 are supported by a first layer 30 formed by processing a single material such as a silicon wafer.

[0087] The second layer 40 may be divided into a surrounding region 43 and cells 44. Cells 44 are regions where a group of regularly arranged through holes 41 are distributed. The surrounding region 43 is the region located around the cells 44 in a plan view. The surrounding region 43 may overlap the first layer 30 in a plan view.

[0088] Figure 6 is a cross-sectional view showing an example of cell 44. The second layer 40 includes a second wall surface 42 facing the through hole 41. As shown in Figure 6, the second wall surface 42 may include a tapered surface 42a that widens away from the center of the through hole 41 as it approaches the third mask surface 401. Including a tapered surface 42a in the second wall surface 42 can suppress the occurrence of shadows in the vicinity of the second wall surface 42.

[0089] In Figure 6, the symbol S8 represents the width of the tapered surface 42a in the direction in which the through holes 41 are aligned. The width S8 may be, for example, 0.2 μm or more, 0.5 μm or more, or 1.0 μm or more. The width S8 may be, for example, 5 μm or less, 10 μm or less, or 20 μm or less. The range of the width S8 may be defined by a first group consisting of 0.2 μm, 0.5 μm, and 1.0 μm, and / or a second group consisting of 5 μm, 10 μm, and 20 μm. The range of the width S8 may be defined by a combination of any one value from the first group and any one value from the second group. The range of the width S8 may be defined by a combination of any two values ​​from the first group. The range of the width S8 may be defined by a combination of any two values ​​from the second group. The width S8 may be, for example, 0.2 μm or more and 20 μm or less, 0.2 μm or more and 10 μm or less, 0.2 μm or more and 5 μm or less, 0.2 μm or more and 1.0 μm or less, 0.2 μm or more and 0.5 μm or less, 0.5 μm or more and 20 μm or less, 0.5 μm or more and 10 μm or less, 0.5 μm or more and 5 μm or less, 0.5 μm or more and 1.0 μm or less, 1.0 μm or more and 20 μm or less, 1.0 μm or more and 10 μm or less, 1.0 μm or more and 5 μm or less, 5 μm or more and 20 μm or less, 5 μm or more and 10 μm or less, or 10 μm or more and 20 μm or less.

[0090] In Figure 6, the symbol θ1 represents the angle between the second wall surface 42 and the fourth mask surface 402. The angle θ1 may be, for example, 50° or more, 55° or more, or 60° or more. The angle θ1 may be, for example, 80° or less, 85° or less, or 90° or less. The range of the angle θ1 may be defined by a first group consisting of 50°, 55°, and 60°, and / or a second group consisting of 80°, 85°, and 90°. The range of the angle θ1 may be defined by a combination of any one value from the first group and any one value from the second group. The range of the angle θ1 may be defined by a combination of any two values ​​from the first group. The range of the angle θ1 may be defined by a combination of any two values ​​from the second group. The angle θ1 may be, for example, 50° or more and 90° or less, 50° or more and 85° or less, 50° or more and 80° or less, 50° or more and 60° or less, 50° or more and 55° or less, 55° or more and 90° or less, 55° or more and 85° or less, 55° or more and 80° or less, 55° or more and 60° or less, 60° or more and 90° or less, 60° or more and 85° or less, 60° or more and 80° or less, 80° or more and 90° or less, 80° or more and 85° or less, or 85° or more and 90° or less.

[0091] The thickness of the second layer 40 is smaller than the thickness T1 of the first layer 30. The thickness of the second layer 40 may be, for example, 5.0 μm or less, 10 μm or less, or 20 μm or less. This can suppress the occurrence of shadows. The thickness of the second layer 40 may be, for example, 0.5 μm or more, 1.0 μm or more, or 2.0 μm or more. This can suppress the occurrence of defects such as pinholes or deformations in the second layer 40. The range of the thickness of the second layer 40 may be defined by a first group consisting of 0.5 μm, 1.0 μm, and 2.0 μm, and / or a second group consisting of 5.0 μm, 10 μm, and 20 μm. The range of the thickness of the second layer 40 may be defined by a combination of any one value from the first group and any one value from the second group. The range of the thickness of the second layer 40 may be defined by a combination of any two values ​​from the first group. The thickness range of the second layer 40 may be determined by any two combinations of values ​​included in the second group described above. The thickness of the second layer 40 may be, for example, 0.5 μm or more and 20 μm or less, 0.5 μm or more and 10 μm or less, 0.5 μm or more and 5.0 μm or less, 0.5 μm or more and 2.0 μm or less, 0.5 μm or more and 1.0 μm or less, 1.0 μm or more and 20 μm or less, 1.0 μm or more and 10 μm or less, 1.0 μm or more and 5.0 μm or less, 1.0 μm or more and 2.0 μm or less, 2.0 μm or more and 20 μm or less, 2.0 μm or more and 10 μm or less, 2.0 μm or more and 5.0 μm or less, 5.0 μm or more and 20 μm or less, 5.0 μm or more and 10 μm or less, or 10 μm or more and 20 μm or less.

[0092] The dimension S4 of the through-hole 41 in plan view may be, for example, 1 μm or more, 2 μm or more, or 3 μm or more. The dimension S4 may be, for example, 5 μm or less, 10 μm or less, or 25 μm or less. The range of dimension S4 may be defined by a first group consisting of 1 μm, 2 μm and 3 μm, and / or a second group consisting of 5 μm, 10 μm and 25 μm. The range of dimension S4 may be defined by a combination of any one value included in the first group and any one value included in the second group. The range of dimension S4 may be defined by a combination of any two values ​​included in the first group. The range of dimension S4 may be defined by a combination of any two values ​​included in the second group. Dimension S4 may be, for example, 1 μm or more and 25 μm or less, 1 μm or more and 10 μm or less, 1 μm or more and 5 μm or less, 1 μm or more and 3 μm or less, 1 μm or more and 2 μm or less, 2 μm or more and 25 μm or less, 2 μm or more and 10 μm or less, 2 μm or more and 5 μm or less, 2 μm or more and 3 μm or less, 3 μm or more and 25 μm or less, 3 μm or more and 10 μm or less, 3 μm or more and 5 μm or less, 5 μm or more and 25 μm or less, 5 μm or more and 10 μm or less, or 10 μm or more and 25 μm or less.

[0093] The spacing S5 between two through holes 41 in the direction in which the through holes 41 are aligned may be, for example, 1 μm or more, 2 μm or more, or 3 μm or more. The spacing S5 may be, for example, 5 μm or less, 10 μm or less, or 25 μm or less. The range of the spacing S5 may be defined by a first group consisting of 1 μm, 2 μm and 3 μm, and / or a second group consisting of 5 μm, 10 μm and 25 μm. The range of the spacing S5 may be defined by a combination of any one value included in the first group and any one value included in the second group. The range of the spacing S5 may be defined by a combination of any two values ​​included in the first group. The range of the spacing S5 may be defined by a combination of any two values ​​included in the second group. The interval S5 may be, for example, 1 μm or more and 25 μm or less, 1 μm or more and 10 μm or less, 1 μm or more and 5 μm or less, 1 μm or more and 3 μm or less, 1 μm or more and 2 μm or less, 2 μm or more and 25 μm or less, 2 μm or more and 10 μm or less, 2 μm or more and 5 μm or less, 2 μm or more and 3 μm or less, 3 μm or more and 25 μm or less, 3 μm or more and 10 μm or less, 3 μm or more and 5 μm or less, 5 μm or more and 25 μm or less, 5 μm or more and 10 μm or more and 25 μm or less.

[0094] The distance S6 between the first wall surface 32 and the through hole 41 in a plan view may be greater than the distance S5. This can suppress the occurrence of shadows in the through hole 41 that is close to the first wall surface 32.

[0095] The second layer 40 may include alignment marks. The alignment marks of the second layer 40 may be formed separately from the alignment marks 39 of the first layer 30, or they may be formed in place of the alignment marks 39 of the first layer 30.

[0096] The alignment marks of the second layer 40 may include recesses located on the third surface 401 or the fourth surface 402 of the mask. The alignment marks of the second layer 40 may include holes penetrating from the third surface 401 to the fourth surface 402 of the mask. The recesses and holes may be formed by etching the third surface 401 or the fourth surface 402 of the mask. The recesses and holes may also be formed by irradiating the third surface 401 or the fourth surface 402 of the mask with a laser.

[0097] Next, the intermediate layer 50 will be described. The intermediate layer 50 includes a layer that performs some function for the first layer 30 or the second layer 40. For example, the intermediate layer 50 includes a first intermediate layer 51. In the example shown in Figure 5, the first intermediate layer 51 is located between the first layer 30 and the second layer 40.

[0098] The first intermediate layer 51 may function as a stopper layer that stops etching in the process of processing the first layer 30 by etching. Specifically, the first intermediate layer 51 has resistance to the etchant that etches the first layer 30. The first intermediate layer 51 includes, for example, a metallic material or an inorganic compound. The metallic material is, for example, aluminum or an aluminum alloy. The aluminum alloy includes, for example, aluminum and neodymium. The inorganic compound is, for example, silicon oxide.

[0099] The thickness of the first intermediate layer 51 may be less than the thickness of the second layer 40. The thickness of the first intermediate layer 51 may be, for example, 5 nm or more, 50 nm or more, or 75 nm or more. The thickness of the first intermediate layer 51 may be, for example, 150 nm or less, 1 μm or less, or 5 μm or less. The range of the thickness of the first intermediate layer 51 may be defined by a first group consisting of 5 nm, 50 nm, and 75 nm, and / or a second group consisting of 150 nm, 1 μm, and 5 μm. The range of the thickness of the first intermediate layer 51 may be defined by a combination of any one value included in the first group and any one value included in the second group. The range of the thickness of the first intermediate layer 51 may be defined by a combination of any two values ​​included in the first group. The range of the thickness of the first intermediate layer 51 may be defined by a combination of any two values ​​included in the second group. The thickness of the first intermediate layer 51 may be, for example, 5 nm to 5 μm, 5 nm to 1 μm, 5 nm to 150 nm, 5 nm to 75 nm, 5 nm to 50 nm, 50 nm to 5 μm, 50 nm to 1 μm, 50 nm to 150 nm, 50 nm to 75 nm, 75 nm to 5 μm, 75 nm to 1 μm, 75 nm to 150 nm, 150 nm to 5 μm, 150 nm to 1 μm, or 1 μm to 5 μm. The higher the resistance of the first intermediate layer 51 to the etchant for the first layer 30, the smaller the thickness of the first intermediate layer 51 can be. It is particularly preferable that the thickness of the first intermediate layer 51 be 1 μm or less.

[0100] Preferably, the intermediate layer 50 is positioned so as not to overlap the through-hole 41 in a plan view. This suppresses the occurrence of shadows caused by the intermediate layer 50.

[0101] The first intermediate layer 51 may include alignment marks. The alignment marks of the first intermediate layer 51 may be formed separately from the alignment marks of the first layer 30 or the second layer 40, or may be formed in place of the alignment marks of the first layer 30 or the second layer 40.

[0102] The thickness of each layer, the dimensions of each component, and the spacing can be measured by observing a cross-sectional image of the mask 20 using a scanning electron microscope.

[0103] Next, the guide device 70 will be described in detail. Figure 7 shows an example of the guide device 70. The nozzle 71 includes a first nozzle 72 and a second nozzle 74. The first nozzle 72 includes a first end 721 and a second end 722. The first end 721 may constitute a tip 711. The second nozzle 74 includes a third end 741 and a fourth end. The fourth end may constitute a rear end 712. The third end 741 of the second nozzle 74 is connected to the second end 722 of the first nozzle 72. As shown in Figure 7, the second end 722 may be located outside the third end 741. Outside means the side away from the center of the nozzle 71 in a plan view.

[0104] The first nozzle 72 includes a first inner surface 725 and a first outer surface 726. The second nozzle 74 includes a second inner surface 745 and a second outer surface 746. As shown by the arrows in Figure 7, the vaporized material 7F may be repeatedly reflected by the second inner surface 745. In this case, the vaporized material 7F entering the first nozzle 72 from the third end 741 can contain velocity components in various directions. Therefore, the vaporized material 7F exiting the first end 721 can contain velocity components in various directions. Although not shown, the vaporized material 7F may also be reflected by the first inner surface 725.

[0105] The first inner surface 725 of the first nozzle 72 or the second inner surface 745 of the second nozzle 74 may be composed of a coating layer. The coating layer may include, for example, a fluororesin. The coating layer can suppress the vaporizing material 7F from adhering to the second inner surface 745. Both the first inner surface 725 and the second inner surface 745 may be composed of a coating layer. The material of the coating layer of the first inner surface 725 may be the same as or different from the material of the coating layer of the second inner surface 745.

[0106] The guide device 70 includes a heater for heating the nozzle 71. The heater includes, for example, a second heater 82. The second heater 82 heats the second nozzle 74. As shown in Figure 7, the second heater 82 may be wrapped around the second outer surface 746. The second heater 82 is, for example, a heating wire.

[0107] The heater may include a first heater 81. The first heater 81 heats the nozzle 71. As shown in Figure 7, the first heater 81 may be wrapped around the first outer surface 726. The first heater 81 is, for example, a heating wire.

[0108] The moving unit 76 may be attached to the second outer surface 746 of the second nozzle 74. The moving unit 76 may be configured to move the tip 711 of the nozzle 71 in accordance with the period of the cells 44 of the mask 20. The moving unit 76 may be driven by a stepping motor or the like.

[0109] The shutter 77 suppresses or prevents the vaporized material 7F from leaving the tip 711. The structure of the shutter 77 is not particularly limited. The shutter 77 may obstruct the flow path of the nozzle 71 by moving from outside to inside the nozzle 71. The shutter 77 may obstruct the flow path of the nozzle 71 by moving or deforming inside the nozzle 71. The shutter 77 may be configured to partially block the flow path of the nozzle 71. For example, the shutter 77 may include a diaphragm.

[0110] The shutter 77 may be located on the tip 711. The shutter 77 may be located near the tip 711. The distance S11 in the third direction D3 from the tip 711 to the shutter 77 may be, for example, 0.0 mm or more, 0.1 mm or more, or 1.0 mm or more. The distance S11 may be, for example, 10 mm or less, 30 mm or less, or 100 mm or less. The range of the distance S11 may be defined by a first group consisting of 0.0 mm, 0.1 mm, and 1.0 mm, and / or a second group consisting of 10 mm, 30 mm, and 100 mm. The range of the distance S11 may be defined by a combination of any one value from the first group and any one value from the second group. The range of the distance S11 may be defined by a combination of any two values ​​from the first group. The range of the distance S11 may be defined by a combination of any two values ​​from the second group. Distance S11 may be, for example, 0.0mm to 100mm, 0.0mm to 30mm, 0.0mm to 10mm, 0.0mm to 1.0mm, 0.0mm to 0.1mm, 0.1mm to 100mm, 0.1mm to 30mm, 0.1mm to 10mm, 0.1mm to 1.0mm, 1.0mm to 100mm, 1.0mm to 30mm, 1.0mm to 10mm, 10mm to 100mm, 10mm to 30mm, or 30mm to 100mm. Distance S11 being 0.0mm means that the shutter 77 is positioned on the tip 711.

[0111] As described above, the second nozzle 74 is deformable. For example, the second nozzle 74 contains a flexible material such as an elastomer. The elastomer content in the second nozzle 74 may be 50% by mass or more, 60% by mass or more, 70% by mass or more, 80% by mass or more, or 90% by mass or more.

[0112] θ2 represents the angle of bending that occurs in the deformable portion of the nozzle 71. In the example shown in Figure 7, the bending occurs in the second nozzle 74. The angle θ2 shows its maximum value when the deposition process is carried out using the cell 44 that is furthest from the deposition source 6 in a direction perpendicular to the third direction D3. The maximum value of the angle θ2 may be, for example, 10° or more, 20° or more, or 30° or more. The maximum value of the angle θ2 may be, for example, 50° or less, 65° or less, or 80° or less. The range of the maximum value of the angle θ2 may be defined by a first group consisting of 10°, 20°, and 30°, and / or a second group consisting of 50°, 65°, and 80°. The range of the maximum value of the angle θ2 may be defined by a combination of any one value from the first group and any one value from the second group. The range of the maximum value of the angle θ2 may be defined by a combination of any two values ​​from the first group. The maximum range of angle θ2 may be determined by any two combinations of values ​​included in the second group described above. For example, the maximum value of angle θ2 may be between 10° and 80°, between 10° and 65°, between 10° and 50°, between 10° and 30°, between 10° and 20°, between 20° and 80°, between 20° and 65°, between 20° and 50°, between 20° and 30°, between 30° and 80°, between 30° and 65°, between 30° and 50°, between 50° and 80°, between 50° and 65°, or between 65° and 80°.

[0113] The deformability of the second nozzle 74 may be determined by its elastic modulus. The elastic modulus of the second nozzle 74 may be, for example, 1 kPa or more, 10 kPa or more, or 100 kPa or more. The elastic modulus of the second nozzle 74 may be, for example, 1 MPa or less, 10 MPa or less, or 100 MPa or less. The range of the elastic modulus of the second nozzle 74 may be determined by a first group consisting of 1 kPa, 10 kPa and 100 kPa, and / or a second group consisting of 1 MPa, 10 MPa and 100 MPa. The range of the elastic modulus of the second nozzle 74 may be determined by a combination of any one value included in the first group and any one value included in the second group. The range of the elastic modulus of the second nozzle 74 may be determined by a combination of any two values ​​included in the first group. The range of the elastic modulus of the second nozzle 74 may be determined by a combination of any two values ​​included in the second group. The elastic modulus of the second nozzle 74 may be, for example, 1 kPa or more and 100 MPa or less, 1 kPa or more and 10 MPa or less, 1 kPa or more and 1 MPa or less, 1 kPa or more and 100 kPa or less, 1 kPa or more and 100 kPa or less, 10 kPa or more and 10 MPa or less, 10 kPa or more and 10 MPa or less, 10 kPa or more and 100 kPa or less, 100 kPa or more and 100 kPa or less, 100 kPa or more and 10 MPa or less, 100 kPa or more and 1 MPa or less, 1 MPa or more and 100 MPa or less, 1 MPa or more and 100 MPa or less.

[0114] The elastic modulus of the second nozzle 74 is calculated by measuring a test specimen taken from the second nozzle 74. The elastic modulus of the test specimen is measured by nanoindentation in accordance with ISO 14577.

[0115] The thickness T20 of the second nozzle 74 may be determined based on the deformability required for the second nozzle 74. The thickness T20 may be, for example, 1 mm or more, 2 mm or more, or 5 mm or more. The thickness T20 may be, for example, 10 mm or less, 20 mm or less, or 50 mm or less. The range of the thickness T20 may be determined by a first group consisting of 1 mm, 2 mm, and 5 mm, and / or a second group consisting of 10 mm, 20 mm, and 50 mm. The range of the thickness T20 may be determined by a combination of any one value included in the first group and any one value included in the second group. The range of the thickness T20 may be determined by a combination of any two values ​​included in the first group. The range of the thickness T20 may be determined by a combination of any two values ​​included in the second group. The thickness T20 may be, for example, 1 mm or more and 50 mm or less, 1 mm or more and 20 mm or less, 1 mm or more and 10 mm or less, 1 mm or more and 5 mm or less, 1 mm or more and 2 mm or less, 2 mm or more and 50 mm or less, 2 mm or more and 20 mm or less, 2 mm or more and 10 mm or less, 2 mm or more and 5 mm or less, 5 mm or more and 50 mm or less, 5 mm or more and 20 mm or less, 5 mm or more and 10 mm or less, 10 mm or more and 50 mm or less, 10 mm or more and 20 mm or more and 50 mm or less.

[0116] The thickness T20 of the second nozzle 74 may be determined in relation to the opening dimension of the third end 741. The opening dimension of the third end 741 is also called the third opening dimension and is denoted by the symbol D21. The ratio D21 / T20 of the third opening dimension D21 to the thickness T20 may be, for example, 2 or more, 5 or more, or 10 or more. D21 / T20 may be, for example, 50 or less, 100 or less, or 300 or less. The range of D21 / T20 may be determined by a first group consisting of 2, 5, and 10, and / or a second group consisting of 50, 100, and 300. The range of D21 / T20 may be determined by a combination of any one value included in the first group and any one value included in the second group. The range of D21 / T20 may be determined by a combination of any two values ​​included in the first group. The range of D21 / T20 may be determined by any two combinations of values ​​included in the second group described above. For example, D21 / T20 may be 2 or more and 300 or less, 2 or more and 100 or less, 2 or more and 50 or less, 2 or more and 10 or less, 2 or more and 5 or less, 5 or more and 300 or less, 5 or more and 100 or less, 5 or more and 50 or less, 5 or more and 10 or less, 10 or more and 300 or less, 10 or more and 100 or less, 10 or more and 100 or less, 10 or more and 300 or less.

[0117] The third opening dimension D21 of the third end 741 may be, for example, 10 mm or more, 20 mm or more, or 50 mm or more. The third opening dimension D21 may be, for example, 100 mm or less, 200 mm or less, or 500 mm or less. The range of the third opening dimension D21 may be defined by a first group consisting of 10 mm, 20 mm, and 50 mm, and / or a second group consisting of 100 mm, 200 mm, and 500 mm. The range of the third opening dimension D21 may be defined by a combination of any one value included in the first group and any one value included in the second group. The range of the third opening dimension D21 may be defined by a combination of any two values ​​included in the first group. The range of the third opening dimension D21 may be defined by a combination of any two values ​​included in the second group. The third opening dimension D21 may be, for example, 10 mm or more and 500 mm or less, 10 mm or more and 200 mm or less, 10 mm or more and 100 mm or less, 10 mm or more and 50 mm or less, 10 mm or more and 20 mm or less, 20 mm or more and 500 mm or less, 20 mm or more and 200 mm or less, 20 mm or more and 100 mm or less, 20 mm or more and 50 mm or less, 50 mm or more and 500 mm or less, 50 mm or more and 200 mm or less, 50 mm or more and 100 mm or less, 100 mm or more and 500 mm or less, 100 mm or more and 200 mm or more and 500 mm or less.

[0118] The length L20 of the second nozzle 74 is set such that the vaporized material 7F is repeatedly reflected by the second inner surface 745 from the fourth end 742 to the third end 741. This allows the vaporized material 7F exiting the third end 741 to contain velocity components in various directions. The length L20 of the second nozzle 74 may be, for example, 100 mm or more, 200 mm or more, or 500 mm or more. The length L20 may be, for example, 1000 mm or less, 2000 mm or less, or 5000 mm or less. The range of the length L20 may be defined by a first group consisting of 100 mm, 200 mm, and 500 mm, and / or a second group consisting of 1000 mm, 2000 mm, and 5000 mm. The range of the length L20 may be defined by a combination of any one value from the first group described above and any one value from the second group described above. The range of length L20 may be determined by any two combinations of values ​​included in the first group described above. The range of length L20 may also be determined by any two combinations of values ​​included in the second group described above. The length L20 may be, for example, 100 mm or more and 5000 mm or less, 100 mm or more and 2000 mm or less, 100 mm or more and 1000 mm or less, 100 mm or more and 500 mm or less, 100 mm or more and 200 mm or less, 200 mm or more and 5000 mm or less, 200 mm or more and 2000 mm or less, 200 mm or more and 1000 mm or less, 200 mm or more and 500 mm or less, 500 mm or more and 5000 mm or less, 500 mm or more and 2000 mm or less, 500 mm or more and 1000 mm or less, 1000 mm or more and 5000 mm or less, 1000 mm or more and 2000 mm or more and 5000 mm or less. L20 is the maximum length of the second nozzle 74 measured along the second outer surface 746.

[0119] The length L20 of the second nozzle 74 may be determined in relation to the third opening dimension D21 of the third end 741. The ratio L20 / D21, which is the ratio of length L20 to the third opening dimension D21, may be, for example, 10 or more, 20 or more, or 50 or more. L20 / D21 may be, for example, 100 or less, 200 or less, or 500 or less. The range of L20 / D21 may be determined by a first group consisting of 10, 20, and 50, and / or a second group consisting of 100, 200, and 500. The range of L20 / D21 may be determined by a combination of any one value from the first group and any one value from the second group. The range of L20 / D21 may be determined by a combination of any two values ​​from the first group. The range of L20 / D21 may be determined by a combination of any two values ​​from the second group. L20 / D21 may be, for example, 10 or more and 500 or less, 10 or more and 200 or less, 10 or more and 100 or less, 10 or more and 50 or less, 10 or more and 20 or less, 20 or more and 500 or less, 20 or more and 200 or less, 20 or more and 100 or less, 20 or more and 50 or less, 50 or more and 500 or less, 50 or more and 200 or less, 50 or more and 100 or less, 100 or more and 500 or less, 100 or more and 200 or more and 500 or less.

[0120] The rigidity of the second nozzle 74 may be lower than that of the first nozzle 72. For example, the elastic modulus of the second nozzle 74 may be lower than that of the first nozzle 72. The ratio of the elastic modulus of the second nozzle 74 to the elastic modulus of the first nozzle 72 is also called the elastic modulus ratio. The elastic modulus ratio may be, for example, 0.01 or more, 0.05 or more, or 0.10 or more. The elastic modulus ratio may be, for example, 0.20 or less, 0.40 or less, or 0.70 or less. The range of the elastic modulus ratio may be defined by a first group consisting of 0.01, 0.05, and 0.10, and / or a second group consisting of 0.20, 0.40, and 0.70. The range of the elastic modulus ratio may be defined by a combination of any one value included in the first group and any one value included in the second group. The range of the elastic modulus ratio may be defined by a combination of any two values ​​included in the first group. The range of the elastic modulus ratio may be determined by any two combinations of values ​​included in the second group described above. The elastic modulus ratio may be, for example, 0.01 to 0.70, 0.01 to 0.40, 0.01 to 0.20, 0.01 to 0.10, 0.01 to 0.05, 0.05 to 0.70, 0.05 to 0.40, 0.05 to 0.20, 0.05 to 0.10, 0.10 to 0.70, 0.10 to 0.40, 0.10 to 0.20, 0.20 to 0.70, 0.20 to 0.40, or 0.40 to 0.70.

[0121] Next, the first nozzle 72 will be described in detail. The first nozzle 72 may contain a rigid material. For example, the first nozzle 72 may contain metal or the like.

[0122] The thickness T10 of the first nozzle 72 may be determined according to the rigidity required of the first nozzle 72. The thickness T10 may be, for example, 1 mm or more, 2 mm or more, or 5 mm or more. The thickness T10 may be, for example, 10 mm or less, 20 mm or less, or 50 mm or less. The range of the thickness T10 may be determined by a first group consisting of 1 mm, 2 mm, and 5 mm, and / or a second group consisting of 10 mm, 20 mm, and 50 mm. The range of the thickness T10 may be determined by a combination of any one value included in the first group and any one value included in the second group. The range of the thickness T10 may be determined by a combination of any two values ​​included in the first group. The range of the thickness T10 may be determined by a combination of any two values ​​included in the second group. The thickness T10 may be, for example, 1 mm or more and 50 mm or less, 1 mm or more and 20 mm or less, 1 mm or more and 10 mm or less, 1 mm or more and 5 mm or less, 1 mm or more and 2 mm or less, 2 mm or more and 50 mm or less, 2 mm or more and 20 mm or less, 2 mm or more and 10 mm or less, 2 mm or more and 5 mm or less, 5 mm or more and 50 mm or less, 5 mm or more and 20 mm or less, 5 mm or more and 10 mm or less, 10 mm or more and 50 mm or less, 10 mm or more and 20 mm or more and 50 mm or less.

[0123] Figure 8 is a cross-sectional view showing the first nozzle 72. The first nozzle 72 has a first opening dimension D11 at the first end 721. The first nozzle 72 has a second opening dimension D12 at the second end 722.

[0124] The first opening dimension D11 is determined according to the dimensions of the cell 44 of the mask 20. The first opening dimension D11 may be, for example, 10 mm or more, 20 mm or more, or 50 mm or more. The first opening dimension D11 may be, for example, 100 mm or less, 200 mm or less, or 500 mm or less. The range of the first opening dimension D11 may be determined by a first group consisting of 10 mm, 20 mm, and 50 mm, and / or a second group consisting of 100 mm, 200 mm, and 500 mm. The range of the first opening dimension D11 may be determined by a combination of any one value from the first group and any one value from the second group. The range of the first opening dimension D11 may be determined by a combination of any two values ​​from the first group. The range of the first opening dimension D11 may be determined by a combination of any two values ​​from the second group. The first opening dimension D11 may be, for example, 10 mm or more and 500 mm or less, 10 mm or more and 200 mm or less, 10 mm or more and 100 mm or less, 10 mm or more and 50 mm or less, 10 mm or more and 20 mm or less, 20 mm or more and 500 mm or less, 20 mm or more and 200 mm or less, 20 mm or more and 100 mm or less, 20 mm or more and 50 mm or less, 50 mm or more and 500 mm or less, 50 mm or more and 200 mm or less, 50 mm or more and 100 mm or less, 100 mm or more and 500 mm or less, 100 mm or more and 200 mm or more and 500 mm or less.

[0125] The first opening dimension D11 may be smaller than the second opening dimension D12. The ratio of the first opening dimension D11 to the second opening dimension D12, D11 / D12, may be, for example, 0.10 or more, 0.20 or more, or 0.30 or more. D11 / D12 may be, for example, 0.50 or less, 0.70 or less, or 0.90 or less. The range of D11 / D12 may be defined by a first group consisting of 0.10, 0.20, and 0.30, and / or a second group consisting of 0.50, 0.70, and 0.90. The range of D11 / D12 may be defined by a combination of any one value from the first group and any one value from the second group. The range of D11 / D12 may be defined by a combination of any two values ​​from the first group. The range of D11 / D12 may be determined by any two combinations of values ​​included in the second group described above. For example, D11 / D12 may be 0.10 or more and 0.90 or less, 0.10 or more and 0.70 or less, 0.10 or more and 0.50 or less, 0.10 or more and 0.30 or less, 0.10 or more and 0.20 or less, 0.20 or more and 0.90 or less, 0.20 or more and 0.70 or less, 0.20 or more and 0.50 or less, 0.20 or more and 0.30 or less, 0.30 or more and 0.90 or less, 0.30 or more and 0.70 or less, 0.30 or more and 0.70 or less.

[0126] The first opening dimension D11 may be the same as the second opening dimension D12. The first opening dimension D11 may be larger than the second opening dimension D12.

[0127] The central axis CL10 of the first nozzle 72 may extend parallel to the third direction D3. For example, the angle between the central axis CL10 of the first nozzle 72 and the third direction D3 may be 10° or less. The angle between the central axis CL10 of the first nozzle 72 and the third direction D3 may be 8° or less, 6° or less, 4° or less, 2° or less, or 1° or less. The central axis CL10 is a straight line passing through the centroid of the first end 721 in a plan view and the centroid of the second end 722 in a plan view.

[0128] The length L10 of the first nozzle 72 may be set to suppress bias in the direction of the vaporized material 7F exiting the first end 721 to a particular direction. The length L10 of the first nozzle 72 may be, for example, 20 mm or more, 50 mm or more, or 100 mm or more. The length L10 may be, for example, 200 mm or less, 500 mm or less, or 1000 mm or less. The range of the length L10 may be defined by a first group consisting of 20 mm, 50 mm, and 100 mm, and / or a second group consisting of 200 mm, 500 mm, and 1000 mm. The range of the length L10 may be defined by a combination of any one value included in the first group and any one value included in the second group. The range of the length L10 may be defined by a combination of any two values ​​included in the first group. The range of the length L10 may be defined by a combination of any two values ​​included in the second group. The length L10 may be, for example, 20 mm or more and 1000 mm or less, 20 mm or more and 500 mm or less, 20 mm or more and 200 mm or less, 20 mm or more and 100 mm or less, 20 mm or more and 50 mm or less, 50 mm or more and 1000 mm or less, 50 mm or more and 500 mm or less, 50 mm or more and 200 mm or less, 50 mm or more and 1000 mm or less, 100 mm or more and 500 mm or less, 100 mm or more and 500 mm or more and 1000 mm or less, 100 mm or more and 200 mm or less, 200 mm or more and 1000 mm or less, 200 mm or more and 500 mm or more and 1000 mm or less. The length L10 is measured along the central axis CL10.

[0129] The length L10 of the first nozzle 72 may be determined in relation to the first opening dimension D11 of the first end 721. The ratio L10 / D11, which is the ratio of length L10 to the first opening dimension D11, may be, for example, 2 or more, 5 or more, or 10 or more. L10 / D11 may be, for example, 20 or less, 50 or less, or 100 or less. The range of L10 / D11 may be determined by a first group consisting of 2, 5, and 10, and / or a second group consisting of 20, 50, and 100. The range of L10 / D11 may be determined by a combination of any one value from the first group and any one value from the second group. The range of L10 / D11 may be determined by a combination of any two values ​​from the first group. The range of L10 / D11 may be determined by a combination of any two values ​​from the second group. L10 / D11 may be, for example, 2 or more and 100 or less, 2 or more and 50 or less, 2 or more and 20 or less, 2 or more and 10 or less, 2 or more and 5 or less, 5 or more and 100 or less, 5 or more and 50 or less, 5 or more and 20 or less, 5 or more and 10 or less, 10 or more and 100 or less, 10 or more and 50 or less, 10 or more and 20 or less, 20 or more and 100 or less, 20 or more and 50 or more and 100 or less.

[0130] The first nozzle 72 may include a first portion 731 and a second portion 732. The first portion 731 includes a first end 721. The first inner surface 725 of the first portion 731 may extend parallel to the central axis CL10. The second portion 732 includes a second end 722. The second portion 732 may have a cross-sectional area that decreases as it moves away from the second end 722.

[0131] The first part 731 has a length L11. The second part 732 has a length L12. The ratio of length L11 to length L12, L11 / L12, may be, for example, 0.2 or greater, 0.5 or greater, or 0.8 or greater. L11 / L12 may be, for example, 1.2 or less, 2.0 or less, or 5.0 or less. The range of L11 / L12 may be defined by a first group consisting of 0.2, 0.5 and 0.8, and / or a second group consisting of 1.2, 2.0 and 5.0. The range of L11 / L12 may be defined by a combination of any one value from the first group and any one value from the second group. The range of L11 / L12 may be defined by a combination of any two values ​​from the first group. The range of L11 / L12 may be defined by a combination of any two values ​​from the second group. L11 / L12 may be, for example, 0.2 or more and 5.0 or less, 0.2 or more and 2.0 or less, 0.2 or more and 1.2 or less, 0.2 or more and 0.8 or less, 0.2 or more and 0.5 or less, 0.5 or more and 5.0 or less, 0.5 or more and 2.0 or less, 0.5 or more and 1.2 or less, 0.5 or more and 0.8 or less, 0.8 or more and 5.0 or less, 0.8 or more and 2.0 or less, 0.8 or more and 1.2 or less, 1.2 or more and 5.0 or less, 1.2 or more and 2.0 or more and 5.0 or less.

[0132] Next, the method for manufacturing the mask 20 according to this embodiment will be described with reference to Figures 9 to 14. First, the first layer 30 is prepared. A silicon wafer may be used as the first layer 30. The first mask surface 301 and the second mask surface 302 of the first layer 30 may be polished to a mirror finish. The arithmetic mean roughness Ra of the first mask surface 301 and the second mask surface 302 may be 1.5 nm or less, or 1.0 nm or less. The surface orientations of the first mask surface 301 and the second mask surface 302 may be (100) and (110), etc.

[0133] Next, as shown in Figure 9, an intermediate layer 50 is formed on the second surface 302 of the mask of the first layer 30. The intermediate layer 50 includes, for example, a first intermediate layer 51. The intermediate layer 50 may be formed over the entire second surface 302 of the mask. The intermediate layer 50 may be formed by, for example, a vacuum deposition method such as sputtering.

[0134] Next, as shown in Figure 10, a second layer 40 is formed on the intermediate layer 50. This makes it possible to obtain a laminate 22 comprising a first layer 30, an intermediate layer 50, and a second layer 40. The second layer 40 may be formed over the entire intermediate layer 50. The second layer 40 may be formed by, for example, plating, vapor deposition, sputtering, etc.

[0135] Although not shown in the figures, the laminate 22 may include a protective layer located on the fourth surface 402 of the mask of the second layer 40. The protective layer may, for example, contain the same material as the first intermediate layer 51. By forming a protective layer on the fourth surface 402 of the mask, etching of the fourth surface 402 of the mask can be suppressed in the first processing step described later. The protective layer may be removed at the same time as the first intermediate layer 51.

[0136] Next, as shown in Figure 11, a resist formation process is carried out to partially form a resist layer 38 on the first surface 301 of the mask of the first layer 30. A resist opening 381 is formed in the resist layer 38, facing the opening 31.

[0137] The resist layer 38 may be a photoresist. In this case, first, a liquid resist material is coated onto the first surface 301 of the mask to form the resist layer 38 on the first surface 301 of the mask. After coating, a step of heating the resist layer 38 may be performed. Subsequently, a photolithography process is performed to expose and develop the resist layer 38. This allows resist openings 381 to be formed in the resist layer 38.

[0138] Although not shown in the diagram, the resist layer 38 may be a silicon oxide film partially formed on the first surface 301 of the mask. The silicon oxide film is formed, for example, by partially performing a thermal oxidation treatment on the first surface 301 of the mask. The silicon oxide film may be formed on the first layer 30 before the intermediate layer 50 and the second layer 40 are laminated onto the first layer 30.

[0139] Next, as shown in Figure 12, a first processing step is performed to form an opening 31 in the first layer 30 by etching the first layer 30 from the mask first surface 301 side. The etching in the first processing step may be dry etching using an etching gas. The etching gas is an example of the etchant described above. Since the intermediate layer 50 has resistance to the etchant, etching can be prevented from progressing to the second layer 40, as shown in Figure 12.

[0140] Next, a resist removal step may be performed to remove the resist layer 38. For example, a resist treatment solution is supplied to the first surface 301 of the mask. If the resist layer 38 is a photoresist, the resist treatment solution contains, for example, N-methyl-2-pyrrolidone. The resist layer 38 may also be removed by irradiating it with oxygen plasma. If the resist layer 38 is a silicon oxide film, the resist treatment solution contains, for example, hydrofluoric acid. The resist layer 38 may also be removed by dry etching using CF4 gas or the like.

[0141] After the first processing step, an intermediate layer removal step may be performed to remove the intermediate layer 50. For example, an etchant for the intermediate layer 50 is supplied to the opening 31. This makes it possible to remove the intermediate layer 50 that overlaps the opening 31 in a plan view, as shown in Figure 13. The etching of the intermediate layer 50 may be dry etching using a fluorine-based gas or the like, or wet etching using an acidic etching solution. The order of the resist removal step and the intermediate layer removal step is not particularly limited. The resist removal step and the intermediate layer removal step may be performed simultaneously.

[0142] Next, a second processing step is performed to form multiple through-holes 41 in the second layer 40. For example, as shown in Figure 14, the second layer 40 is irradiated with a laser L from the mask third surface 401 side. This allows through-holes 41 to be formed in the second layer 40. As the laser L, a KrF excimer laser with a wavelength of 248 nm, a YAG laser with a wavelength of 355 nm, etc., can be used.

[0143] The second processing step may be carried out with a protective film or protective coating formed on the fourth surface 402 of the mask of the second layer 40. The protective film is a component that is attached to the fourth surface 402 of the mask. The protective film includes, for example, a resin film and an adhesive layer. The protective film is attached to the fourth surface 402 of the mask such that the adhesive layer is in contact with the fourth surface 402 of the mask. The adhesive layer may be an adhesive layer or an adsorbent layer. The protective film is formed by applying a resin-containing liquid onto the fourth surface 402 of the mask. Application methods include, for example, bar coating, spin coating, and spray coating. The protective film or protective layer may be removed after the second processing step is completed. Preferably, the reactivity of the protective film or protective film to the laser is lower than that of the second layer 40 to the laser. Reactivity refers to the speed at which the protective film or protective film or the second layer 40 is processed by the laser.

[0144] In the second processing step, first, the laminate 22 is placed on the stage so that the fourth surface 402 of the mask faces the stage surface. Next, the position of the irradiation head relative to the laminate 22 is adjusted. In the position adjustment step, either the irradiation head or the stage may be moved. By repeatedly irradiating with the laser and adjusting the position, multiple through holes 41 can be formed in the second layer 40. In this way, the mask 20 shown in Figure 5 can be obtained.

[0145] Alternatively, a laser mask corresponding to a pattern of multiple through-holes 41 may be used. In this case, a focusing lens may be placed between the laser mask and the second layer 40. Multiple through-holes 41 can be formed by a laser processing method using a reduction projection optical system.

[0146] Although not shown in the figures, through holes 41 may be formed in the second layer 40 using means other than a laser. For example, the second layer 40 shown in Figure 5 may be obtained by performing a plating treatment so that the second layer 40 is not formed at the location of the through holes 41.

[0147] Next, we will describe an example of a method for manufacturing the organic device 100.

[0148] First, a substrate 110 on which the first electrode 120 is formed is prepared. The substrate 110 may be a silicon wafer. The first electrode 120 may be formed, for example, by forming a conductive layer constituting the first electrode 120 on the substrate 110 by a vacuum deposition method, and then patterning the conductive layer by a photolithography method. The patterning of the conductive layer may be performed using equipment that performs semiconductor manufacturing processes. An insulating layer 160 located between two adjacent first electrodes 120 may be formed on the substrate 110.

[0149] Next, an organic layer 130, including a first organic layer 130A and a second organic layer 130B, is formed on the first electrode 120. For example, first, the first organic layer 130A is formed by a deposition method using a deposition apparatus 10 including a first mask 20. The first mask 20 has through holes 41 corresponding to the first organic layer 130A. Next, the second organic layer 130B is formed by a deposition method using a deposition apparatus 10 including a second mask 20. The second mask 20 has through holes 41 corresponding to the second organic layer 130B. Next, a third organic layer is formed by a deposition method using a deposition apparatus 10 including a third mask 20. The third mask 20 has through holes 41 corresponding to the third organic layer.

[0150] Next, a second electrode 140 is formed on the organic layer 130. For example, as shown in Figure 1, the second electrode 140 may be formed over the entire first surface 111. Alternatively, although not shown, the second electrode 140 may be formed by a vapor deposition method using a mask 20, similar to the organic layer 130. After that, a sealing layer or the like (not shown) may be formed on the second electrode 140. In this way, the organic device 100 can be obtained.

[0151] Multiple organic devices 100 may be formed on a single substrate 110. Each organic device 100 may correspond to one opening 31 of the mask 20. In this case, a cutting process of the substrate 110 may be performed. For example, the substrate 110 may be cut along a region of the substrate 110 that corresponds to the inner region 36 of the mask 20. This makes it possible to obtain multiple organic devices 100.

[0152] An example of a deposition method using the deposition apparatus 10 will be explained with reference to Figures 2 and 15A to 17B.

[0153] As shown in Figure 2, the mask 20 is placed in the chamber 9. The mask 20 is held, for example, by a mask holder 5A. Next, the substrate 110 and the mask 20 are combined so that the first surface 111 of the substrate 110 faces the exit surface 202 of the mask 20. The substrate 110 may also be held by a substrate holder 5B.

[0154] Next, a first movement step is performed to move the tip 711 of the nozzle 71 to a first position. Figure 15A is a cross-sectional view showing the nozzle 71 in the first position. In the first position, the tip 711 may face a cell 44 in a third direction D3. The cell 44 facing the tip 711 in the first position is also referred to as the first cell 44A. The shutter 77 may be closed during the first movement step.

[0155] Figure 15B is a plan view showing the positional relationship between the tip 711 in the first position and the mask 20. The tip 711 may surround the first cell 44A in plan view. As shown in Figure 15B, a portion of the wall surface 32 of the opening 31 corresponding to the first cell 44A may not be surrounded by the tip 711. Although not shown, the entire wall surface 32 of the opening 31 corresponding to the first cell 44A may be surrounded by the tip 711.

[0156] The control unit described above controls the movement unit 76 so that the tip 711 moves to a first position. The control unit may also control the movement unit 76 based on information from a monitoring unit. The monitoring unit monitors the relative position of the tip 711 with respect to the mask 20. The monitoring unit includes, for example, a camera.

[0157] Next, a first deposition process is performed in which a deposition material is deposited onto the substrate 110 via the first cell 44A at the first position. For example, the shutter 77 is opened. This causes the vaporized material 7F to be released from the tip 711 toward the opening 31. The vaporized material 7F adheres to the substrate 110 through the through hole 41. This forms an organic layer 130 corresponding to the first cell 44A.

[0158] Next, as shown in Figure 16, a second movement step is performed in which the tip 711 of the nozzle 71 is moved from the first position to the second position. As shown in Figure 16, a closing step may be performed during the second movement step in which the nozzle 71 is closed using the shutter 77.

[0159] Figure 17A is a cross-sectional view showing the nozzle 71 in a second position. In the second position, the tip 711 may face a cell 44 in a third direction D3. The cell 44 facing the tip 711 in the second position is also referred to as the second cell 44B. The second cell 44B may be adjacent to the first cell 44A in a plan view.

[0160] Figure 17B is a plan view showing the positional relationship between the tip 711 at the second position and the mask 20. The tip 711 may surround the second cell 44B in the plan view.

[0161] Next, a second deposition process is performed in which a deposition material is deposited onto the substrate 110 via the second cell 44B at the second position. For example, the shutter 77 is opened. This causes the vaporized material 7F to be released from the tip 711 toward the opening 31. The vaporized material 7F adheres to the substrate 110 through the through hole 41. This forms the organic layer 130 corresponding to the second cell 44B.

[0162] The control unit described above controls the moving unit 76 so that the first moving step, the first deposition step, the second moving step, and the second deposition step are carried out. By repeating these moving and deposition steps, an organic layer 130 can be formed on the substrate 110 through multiple cells 44 of the mask 20.

[0163] The effects of the deposition apparatus 10 according to this embodiment will be explained based on a comparison with a reference example. Figure 18 shows the deposition apparatus 10 according to the first reference example. The deposition source 6 is positioned so as not to overlap the substrate 110 and the mask 20 in the third direction D3. The deposition process is carried out while rotating the substrate 110 and the mask 20.

[0164] When using the deposition apparatus 10 shown in Figure 18, when the substrate 110 is at the position of the first rotation angle, the deposition material 7 that flies in at the first incident angle adheres to one target position on the substrate 110. When the substrate 110 is at the position of the second rotation angle, the deposition material 7 that flies in at a second incident angle different from the first incident angle adheres to the aforementioned target position on the substrate 110. In this way, the incident angle of the deposition material 7 that reaches one target position changes with the rotation of the substrate 110. That is, the deposition material 7 that reaches one target position contains velocity components in various directions. Therefore, it is possible to suppress differences in the incident angle of the deposition material 7 depending on the position on the substrate 110. This makes it possible to suppress phenomena such as differences in the thickness and shape of the deposition layer depending on the position on the substrate 110.

[0165] On the other hand, when using the deposition apparatus 10 shown in Figure 18, vibrations occur in the substrate 110 and the mask 20 due to rotation. As a result, the position of the mask 20 relative to the substrate 110 may change. When the position of the mask 20 changes, the accuracy of the thickness, shape, and other properties of the deposition layer formed on the substrate 110 decreases.

[0166] According to the deposition apparatus 10 of this embodiment, by using the guide device 70, the deposition material 7 that reaches a single target position contains velocity components in various directions. Therefore, it is possible to suppress differences in the incident angle of the deposition material 7 depending on the position on the substrate 110. This suppresses the phenomenon in which the thickness, shape, etc. of the deposition layer differs depending on the position on the substrate 110. In addition, since it is not necessary to rotate the substrate 110, it is possible to suppress changes in the position of the mask 20 relative to the substrate 110 during the deposition process. Therefore, the thickness, shape, etc. of the deposition layer formed on the substrate 110 can be made highly accurate.

[0167] Figure 19 shows a vapor deposition apparatus 10 according to the second reference example. The vapor deposition source 6 extends along the first direction D1, which is perpendicular to the third direction D3. The vapor deposition process is carried out while moving the vapor deposition source 6 and the vaporizer 8 in the second direction, which is perpendicular to the first direction D1 and the third direction D3. This suppresses differences in the incident angle of the vapor deposition material 7 depending on the position on the substrate 110. This suppresses phenomena in which the thickness, shape, etc. of the vapor deposition layer differ depending on the position on the substrate 110.

[0168] The vaporizer 8 is, for example, a heater. Heat is emitted from the vaporizer 8. In the third direction D3, the region of the mask 20 that overlaps with the vaporizer 8 receives more heat from the vaporizer 8 than other regions. Therefore, the temperature of the region of the mask 20 that overlaps with the vaporizer 8 in the third direction D3 is higher than the temperature of other regions. When using the deposition apparatus 10 shown in Figure 19, the vaporizer 8 is moved, so the region of the mask 20 where the temperature difference occurs changes over time. That is, the heat distribution of the mask 20 changes during the deposition process. Therefore, it is conceivable that the position of the mask 20 relative to the substrate 110 changes during the deposition process due to the thermal expansion of the mask 20. When the position of the mask 20 changes, the accuracy of the thickness, shape, etc. of the deposited layer formed on the substrate 110 decreases.

[0169] According to the deposition apparatus 10 of this embodiment, by using the guide device 70, the deposition material 7 that reaches a single target position contains velocity components in various directions. Therefore, it is possible to suppress differences in the incident angle of the deposition material 7 depending on the position on the substrate 110. This prevents phenomena such as differences in the thickness and shape of the deposition layer depending on the position on the substrate 110. Furthermore, since it is not necessary to move the vaporizer 8, it is possible to suppress changes in the heat distribution of the mask 20 during the deposition process. Therefore, it is possible to suppress changes in the position of the mask 20 relative to the substrate 110 during the deposition process. As a result, the thickness and shape of the deposition layer formed on the substrate 110 can be made highly accurate.

[0170] The above-described embodiment can be modified in various ways. Other embodiments will be described below, with reference to the drawings as necessary. In the following description and the drawings used therein, parts that can be configured similarly to the above-described embodiment will be given the same reference numerals as those used for the corresponding parts in the above-described embodiment. Duplication of explanation will be omitted. Furthermore, if it is clear that the effects and advantages obtained in the above-described embodiment can also be obtained in other embodiments, the explanation may be omitted.

[0171] Figure 20 is a cross-sectional view showing an example of a vapor deposition apparatus 10. The first nozzle 72 may be branched. For example, the first nozzle 72 may include a 1-A nozzle 72A and a 1-B nozzle 72B. The 1-A nozzle 72A includes a first end 721A facing the mask 20. The 1-B nozzle 72B includes a first end 721B facing the mask 20. The first end 721B is separated from the first end 721A. For example, when the first end 721A surrounds a first cell 44A in a plan view, the first end 721B can surround a second cell 44B in a plan view. The 1-A nozzle 72A and the 1-B nozzle 72B may include a common second end 722.

[0172] Although not shown in the diagram, nozzles 1-A 72A and 1-B 72B may be provided with shutters 77.

[0173] The deposition apparatus 10 shown in Figure 20 can perform the deposition process simultaneously in the first cell 44A and the second cell 44B.

[0174] Figure 21 is a cross-sectional view showing an example of a vapor deposition apparatus 10. During the vapor deposition process, the tip 711 of the nozzle 71 may surround two or more cells 44 in a plan view. For example, as shown in Figure 21, the first nozzle 72 may include a first end 721 that can surround two or more cells 44 in a plan view. This allows the vapor deposition process to be carried out simultaneously in two or more cells 44.

[0175] Although not shown in the diagram, the first nozzle 72 may be provided with a shutter 77.

[0176] The number of cells 44 that can be enclosed in a plan view by the tip 711 of the nozzle 71 is also called the number of cells processed. The number of cells processed is not particularly limited. For example, the number of cells processed may be 1 or more, 2 or more, or 4 or more. For example, the number of cells processed may be 9 or less, 16 or less, or 25 or less. The range of the number of cells processed may be determined by a first group consisting of 1, 2, and 4, and / or a second group consisting of 9, 16, and 25. The range of the number of cells processed may be determined by a combination of any one value included in the first group and any one value included in the second group. The range of the number of cells processed may be determined by a combination of any two values ​​included in the first group. The range of the number of cells processed may be determined by a combination of any two values ​​included in the second group. The number of cells to be processed can be, for example, 1 to 25, 1 to 16, 1 to 9, 1 to 4, 1 to 2, 2 to 25, 2 to 16, 2 to 9, 2 to 4, 4 to 25, 4 to 16, 4 to 9, 9 to 25, 9 to 16, or 16 to 25.

[0177] The ratio of the number of cells processed to the number of cells 44 contained in the mask 20 is also called the cell processing ratio. The cell processing ratio may be, for example, 0.001 or more, 0.01 or more, or 0.03 or more. The cell processing ratio may be, for example, 0.1 or less, 0.2 or less, or 0.5 or less. The range of the cell processing ratio may be defined by a first group consisting of 0.001, 0.01, and 0.03, and / or a second group consisting of 0.1, 0.2, and 0.5. The range of the cell processing ratio may be defined by a combination of any one value from the first group and any one value from the second group. The range of the cell processing ratio may be defined by a combination of any two values ​​from the first group. The range of the cell processing ratio may be defined by a combination of any two values ​​from the second group. The processing ratio of the cells may be, for example, 0.001 or more and 0.5 or less, 0.001 or more and 0.2 or less, 0.001 or more and 0.1 or less, 0.001 or more and 0.03 or less, 0.001 or more and 0.01 or less, 0.01 or more and 0.5 or less, 0.01 or more and 0.2 or less, 0.01 or more and 0.1 or less, 0.01 or more and 0.03 or less, 0.03 or more and 0.5 or less, 0.03 or more and 0.2 or less, 0.03 or more and 0.1 or less, 0.1 or more and 0.5 or less, 0.1 or more and 0.2 or less, and 0.2 or more and 0.5 or less.

[0178] Figure 22 is a cross-sectional view showing an example of a first nozzle 72. The first nozzle 72 may include a first portion 731, a second portion 732, and a third portion 733. The first portion 731 includes a first end 721. The second portion 732 includes a second end 722. The third portion 733 is located between the first portion 731 and the second portion 732.

[0179] The third portion 733 has a dimension D13 in a direction perpendicular to the third direction D3. Dimension D13 may be smaller than the first opening dimension D11. As shown in Figure 22, the first portion 731 may have a cross-sectional area that increases as it approaches the first end 721.

[0180] Figure 23 is a cross-sectional view showing an example of a vapor deposition apparatus 10. The nozzle 71 may include a single member extending from a tip 711 to a rear end 712. The member may be deformable. This allows the tip 711 to be moved by deforming a part of the nozzle 71, as shown in Figure 23.

[0181] The components constituting the nozzle 71 may include flexible materials such as elastomers. The elastomer content in the nozzle 71 may be 50% by mass or more, 60% by mass or more, 70% by mass or more, 80% by mass or more, or 90% by mass or more. The range of the elastic modulus of the nozzle 71 can be the same as the range of the elastic modulus of the second nozzle 74 described above.

[0182] The nozzle 71 has a first opening dimension at its tip 711. The nozzle 71 has a fourth opening dimension at its rear end 712. The first opening dimension may be smaller than the fourth opening dimension.

[0183] The length of the nozzle 71 is set such that the vaporized material 7F is repeatedly reflected by the inner surface 715 from the rear end 712 to the front end 711. The length of the nozzle 71 may be, for example, 100 mm or more, 200 mm or more, or 500 mm or more. The length of the nozzle 71 may be, for example, 1000 mm or less, 2000 mm or less, or 5000 mm or less. The range of the length of the nozzle 71 may be defined by a first group consisting of 100 mm, 200 mm, and 500 mm, and / or a second group consisting of 1000 mm, 2000 mm, and 5000 mm. The range of the length of the nozzle 71 may be defined by a combination of any one value from the first group and any one value from the second group. The range of the length of the nozzle 71 may be defined by a combination of any two values ​​from the first group. The range of the length of the nozzle 71 may be defined by a combination of any two values ​​from the second group. The length of the nozzle 71 may be, for example, 100 mm or more and 5000 mm or less, 100 mm or more and 2000 mm or less, 100 mm or more and 1000 mm or less, 100 mm or more and 500 mm or less, 100 mm or more and 200 mm or less, 200 mm or more and 5000 mm or less, 200 mm or more and 2000 mm or less, 200 mm or more and 1000 mm or less, 200 mm or more and 500 mm or less, 500 mm or more and 5000 mm or less, 500 mm or more and 2000 mm or less, 500 mm or more and 1000 mm or less, 1000 mm or more and 5000 mm or less, 1000 mm or more and 2000 mm or more and 5000 mm or less. The length of the nozzle 71 is the maximum length of the nozzle 71 measured along the outer surface 716.

[0184] The length of the nozzle 71 may be determined in relation to the first opening dimension of the tip 711. The ratio of the length of the nozzle 71 to the first opening dimension may be, for example, 10 or more, 20 or more, or 50 or more. The ratio of the length of the nozzle 71 to the first opening dimension may be, for example, 100 or less, 200 or less, or 500 or less. The range of the ratio of the length of the nozzle 71 to the first opening dimension may be determined by a first group consisting of 10, 20, and 50, and / or a second group consisting of 100, 200, and 500. The range of the ratio of the length of the nozzle 71 to the first opening dimension may be determined by a combination of any one value included in the first group and any one value included in the second group. The range of the ratio of the length of the nozzle 71 to the first opening dimension may be determined by a combination of any two values ​​included in the first group. The range of the ratio of the length of the nozzle 71 to the first opening dimension may be determined by a combination of any two values ​​included in the second group. The ratio of the length of the nozzle 71 to the first opening dimension may be, for example, 10 to 500, 10 to 200, 10 to 100, 10 to 50, 10 to 20, 20 to 500, 20 to 200, 20 to 100, 20 to 50, 50 to 500, 50 to 200, 50 to 100, 100 to 500, 100 to 200, or 200 to 500.

[0185] Next, we will describe one form of the material for the first layer 30.

[0186] In the embodiments described above, an example was given in which the first layer 30 contains silicon or a silicon compound, but the material of the first layer 30 is not particularly limited. For example, the first layer 30 may contain a metallic material. In this case, the opening 31 may be formed by wet etching the first layer 30.

[0187] Next, we will describe one form of the layer structure of the mask 20.

[0188] In the above-described embodiment, an example was given in which the mask 20 includes a first layer 30 and a second layer 40, but the layer configuration of the mask 20 is not particularly limited. In this embodiment, an example is given in which the mask 20 includes a metal plate. Figure 24 is a plan view showing an example of the mask 20.

[0189] In a plan view, the mask 20 may include a first side edge 203 and a second side edge 204 extending in a first direction D1, and a first mask end 205 and a second mask end 206. The first mask end 205 and the second mask end 206 are the ends of the mask 20 in the first direction D1. The dimensions of the mask 20 in the first direction D1 are greater than the dimensions of the mask 20 in the second direction D2.

[0190] The mask 20 includes two or more cells 24 aligned in the first direction D1. Cells 24, like the cells 44 described above, are regions where a group of regularly arranged through holes 21 are distributed.

[0191] Figure 25 is a cross-sectional view showing an example of a deposition apparatus 10 equipped with the mask 20 of Figure 24. The mask 20 includes a metal layer 25 and through holes 21 penetrating the metal layer 25. The metal layer 25 may be a metal plate. The metal layer 25 may include an incident surface 201 and an exit surface 202.

[0192] The material of the metal layer 25 is, for example, an iron alloy containing nickel. The iron alloy may also contain cobalt in addition to nickel. For example, an iron alloy can be used in which the total content of nickel and cobalt is 28% by mass or more and 54% by mass or less, and the cobalt content is 0% by mass or more and 6% by mass or less. This makes it possible to reduce the difference between the thermal expansion coefficient of the mask 20 and the thermal expansion coefficient of the substrate 110 containing glass. As a result, it is possible to suppress the decrease in dimensional accuracy and positional accuracy of the vapor-deposited layer formed on the substrate 110 due to thermal expansion.

[0193] The total nickel and cobalt content in the metal layer 25 may be 28% by mass or more and 38% by mass or less. In this case, specific examples of iron alloys containing nickel or nickel and cobalt include Invar, Super Invar, and Ultra Invar. Invar is an iron alloy containing 34% by mass or more and 38% by mass or less nickel, with the remainder being iron and unavoidable impurities. Super Invar is an iron alloy containing 30% by mass or more and 34% by mass or less nickel, cobalt, the remainder being iron and unavoidable impurities. Ultra Invar is an iron alloy containing 28% by mass or more and 34% by mass or less nickel, 2% by mass or more and 7% by mass or less cobalt, 0.1% by mass or more and 1.0% by mass or less manganese, 0.10% by mass or less silicon, 0.01% by mass or less carbon, the remainder being iron and unavoidable impurities.

[0194] The combined nickel and cobalt content in the metal layer 25 may be 38% by mass or more and 54% by mass or less. For example, the metal layer 25 may be composed of an iron alloy containing 38% by mass or more and 54% by mass or less nickel, with the remainder being iron and unavoidable impurities. Such a metal layer 25 may be manufactured by a plating method.

[0195] In this embodiment as well, as shown in Figure 25, during the deposition process, at least one cell 24 is surrounded by the tip 711 of the nozzle 71 in a plan view. By using the nozzle 71, it is possible to suppress differences in the incident angle of the deposition material 7 depending on the position on the substrate 110. This makes it possible to suppress phenomena in which the thickness, shape, etc. of the deposition layer differ depending on the position on the substrate 110.

[0196] The multiple components disclosed in the above embodiments can be combined as needed. Alternatively, some components may be removed from all the components shown in the above embodiments.

Claims

1. A vapor deposition apparatus for depositing a vapor deposition material onto a substrate, A mask including an exit surface facing the substrate and an incident surface located on the opposite side of the exit surface, A vapor deposition source containing the vapor deposition material, A vaporization apparatus that vaporizes the aforementioned deposition material to produce a vaporized material, The system includes a guide device for guiding the vaporized material to the incident surface, The mask includes two or more cells and a surrounding region located around each cell in a plan view. The aforementioned cell is a region in which a group of regularly arranged through holes is distributed. The guide device comprises a nozzle including a front end facing the incident surface and a rear end, and a moving unit for moving the front end in a direction parallel to the incident surface. The aforementioned tip surrounds at least two or more of the aforementioned cells in a plan view, The aforementioned nozzle is A first nozzle including a first end and a second end that constitute the tip, A second nozzle comprising a third end connected to the second end, and a fourth end, The first nozzle includes nozzle 1-A (72A) and nozzle 1-B (72B), The 1-A nozzle (72A) faces the mask and includes a first end (721A) that surrounds the first cell (44A) of the mask in a plan view. The 1-B nozzle (72B) faces the mask 20 and, apart from the first end (721A) of the 1-A nozzle (72A), includes a first end (721B) that surrounds the second cell (44B) of the mask in a plan view. A vapor deposition apparatus comprising nozzle 1-A (72A) and nozzle 1-B (72B), each including a common second end (722).

2. The deposition apparatus according to claim 1, wherein the tip surrounds four or fewer cells in a plan view.

3. The vapor deposition apparatus according to any one of claims 1 to 2, wherein the moving unit deforms the nozzle so that the tip moves.

4. The vapor deposition apparatus according to any one of claims 1 to 3, wherein the nozzle comprises an elastomer.

5. The nozzle has a first opening dimension at its tip, The vapor deposition apparatus according to any one of claims 1 to 3, wherein the ratio of the length of the nozzle to the first opening dimension is 10 or more.

6. The vapor deposition apparatus according to any one of claims 1 to 5, wherein the moving unit deforms the second nozzle so that the first nozzle moves in a direction parallel to the incident surface.

7. The vapor deposition apparatus according to any one of claims 1 to 6, wherein the rigidity of the second nozzle is lower than the rigidity of the first nozzle.

8. The second nozzle has a third opening dimension at the third end, The vapor deposition apparatus according to any one of claims 1 to 7, wherein the ratio of the length of the second nozzle to the third opening dimension is 10 or more.

9. The vapor deposition apparatus according to any one of claims 1 to 8, wherein the first nozzle has a central axis extending parallel to the direction normal to the incident surface.

10. The first nozzle has a first opening dimension at the first end, The vapor deposition apparatus according to any one of claims 1 to 9, wherein the first nozzle has a second opening dimension at the second end that is larger than the first opening dimension.

11. The vapor deposition apparatus according to any one of claims 1 to 10, wherein the guide device comprises a heating unit for heating the nozzle.

12. The vapor deposition apparatus according to any one of claims 1 to 11, wherein the guide device comprises a shutter for closing the nozzle.

13. The guide device includes a control unit for controlling the moving unit, The control unit controls the moving unit so that the first moving step, the first deposition step, the second moving step, and the second deposition step are carried out. The first movement step involves moving the tip to a first position. The first deposition step involves depositing the deposition material onto the substrate via the first cell at the first position, The second movement step involves moving the tip to the second position, The vapor deposition apparatus according to any one of claims 1 to 12, wherein the second vapor deposition step involves depositing a vapor deposition material onto the substrate via the second cell at the second position.

14. A program for causing a computer to function as the control unit of the deposition apparatus described in claim 13.

15. A computer-readable, non-transient recording medium on which the program described in claim 14 is recorded.

16. A vapor deposition method for depositing a vapor deposition material onto a substrate using the vapor deposition apparatus described in claim 1, A first movement step of moving the tip to a first position, A first deposition step of depositing a deposition material onto the substrate via the first cell at the first position, A second movement step of moving the tip to a second position, A vapor deposition method comprising: a second vapor deposition step of depositing a vapor deposition material onto the substrate via the second cell at the second position.

17. The deposition method according to claim 16, further comprising a closing step of closing the nozzle between the first deposition step and the second deposition step.

18. The aforementioned mask is A first layer comprising: a first mask surface located on the incident surface; a second mask surface located on the opposite side of the first mask surface; and at least one opening penetrating from the first mask surface to the second mask surface; The deposition method according to claim 16 or 17, comprising a second layer including a third mask surface facing the second mask surface, a fourth mask surface located on the opposite side of the third mask surface, and a plurality of through holes penetrating from the third mask surface to the fourth mask surface and overlapping the opening in a plan view.

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