Heat dissipation substrate for power semiconductor modules, power semiconductor module including the same, and power converter.

Abstract

To provide a heat dissipation substrate for power semiconductor modules that significantly improves heat dissipation performance, a power semiconductor module, and a power conversion apparatus including the power semiconductor module.SOLUTION: A heat dissipation substrate 400 for power semiconductor modules can include an intermediate metal plate 420 bonded to the bottom surface of an insulating substrate 410, a second metal plate 422 bonded to the bottom surface of the intermediate metal plate 420, and a first metal plate 421 bonded to the bottom surface of second metal plate 422. The second metal plate 422 includes a hollow structure HE.SELECTED DRAWING: Figure 2

Description

Technical Field

[0001] Power conversion modules are used not only in eco-friendly vehicles such as electric vehicles (EV) and fuel cell vehicles (PCEV), but also in various electrical and electronic devices including chargers for electric vehicles, energy storage devices, power supply devices, and railways, and perform functions such as power conversion (DC⇔AC), motor drive switching, and power control.

[0002] A power conversion module includes various components such as power semiconductor elements, heat dissipation substrates, base plates, molding silicon, cases, and terminals. However, heat generated by the power semiconductor element generates thermo-mechanical stress in each component of the power semiconductor module, and thermal fatigue of the joint reduces the service life of the power semiconductor element. Therefore, reliability design of power semiconductor modules that discharges heat generated by the power semiconductor element through the heat dissipation substrate to maintain the temperature of the joint of the power semiconductor element below an appropriate temperature is important.

[0003] Conventional heat dissipation substrates for power semiconductors can be classified into DBC (Direct Bonded Copper) method and AMB (Active Metal Brazing) method according to the bonding method. The DBC method is a method in which an oxide film is formed on a copper (Cu) layer and then directly bonded to ceramic. The AMB method is a method in which brazing is performed by interposing a paste containing low-melting-point metal particles as an intermediate material between the base metal and ceramic.

[0004] Recently, 1200V, 200A-class high-voltage / high-power SiC power conversion modules have been used for performance improvement of hybrid and electric vehicles and applications in autonomous vehicles. During the operation of such high-performance electric vehicles, the operating temperature of power semiconductor elements is required to reach an average of 300°C or higher, and the instantaneous maximum operating temperature faces ultra-high temperature usage conditions of 350°C to 700°C.

[0005] In such extremely high-temperature, high-voltage, and high-current operating environments, the existing bonding material itself remelts, and pores in the bonding area cause a thermal trapping phenomenon, drastically degrading the lifespan of the power semiconductor module. This can lead to thermal runaway, resulting in the destruction of power semiconductor elements and seriously impacting driver safety.

[0006] Conventional technologies employ a variety of heat dissipation components and modules, such as heat sinks, heat dissipation plates, heat pipes, and vapor chambers, to solve the heat generation problem of electronic elements such as power semiconductor modules.

[0007] For example, prior patent 1US2020 / 0132392A1 (2020.04.30) is an invention relating to a "vapor chamber heat spreader for power electronic assemblies".

[0008] Figure 1a is a diagram of Figure 2 relating to the power electronic assembly 10 of prior patent 1.

[0009] In Prior Patent 1, each component of the power electronic assembly 10 is bonded together by a bonding layer 50. Specifically, the lower and upper sides of the electronic element 20 in Prior Patent 1 are bonded to the substrate 21 and the spacer layer 70, respectively, by the bonding layer 50. The upper side of the spacer layer 70 is also bonded to the auxiliary substrate 21A by the bonding layer 50. In Prior Patent 1, the substrate 21 and the auxiliary substrate 21A are DBC (Direct Bonded Copper) heat dissipation substrates in which a copper layer is directly bonded to the surface of a ceramic insulating substrate. Prior Patent 1 includes wire wiring 68 that electrically connects the gate electrode 66 and the electronic element 20.

[0010] On the other hand, in prior art 1, a substrate 21 bonded with an adhesive layer 50, an electronic element 20, a spacer layer 70, an auxiliary substrate 21A, wiring 68, and a gate electrode 66 are packaged with resin 69. After packaging, a separately manufactured vapor chamber heat spreader 102 is bonded to the cooling surface 24 of the substrate 21 and the cooling surface 24A of the auxiliary substrate 21A by an adhesive layer 80 containing thermal grease or a non-conductive substance, respectively, to perform heat dissipation. The vapor chamber heat spreader 102 includes an evaporation plate 104, a condensation plate 106, a side wall 108, a vapor chamber 110, a thermal compensation layer 130, and pins 126. The thermal compensation layer 130 increases the heat capacity by including core-shell phase change particles.

[0011] The vapor chamber heat spreader 102 of Prior Patent 1 includes a working fluid disposed within a vapor chamber 110, the working fluid having a vaporization temperature within the operating temperature range of the vapor chamber. The working fluid evaporates on the evaporation surface of the evaporation plate 104 and condenses on the condensation surface of the condensation plate 106. The condensed working fluid is transported by capillary action along the condensation plate 106 and the side walls 108 and / or pins 126 to the evaporation plate 104, where it re-evaporates and vaporizes at the hot points of the evaporation plate 104.

[0012] However, as in Prior Art 1, when a separately manufactured vapor chamber heat spreader 102 is bonded to the substrate 21 or auxiliary substrate 21A with adhesive 80, not only is the heat transfer path from the heat source electronic element 20 to the vapor chamber heat spreader 102 lengthened, but the presence of a separate adhesive layer between the vapor chamber heat spreader 102 and the substrate 21 or auxiliary substrate 21A generates thermal resistance, reducing heat transfer efficiency. This leads to problems such as the vaporization of the working fluid not occurring properly, resulting in reduced heat dissipation performance.

[0013] Furthermore, as in Prior Art 1, when a separately manufactured vapor chamber heat spreader 102 is bonded to the substrate 21 or auxiliary substrate 21A with adhesive 80, there is a problem that separation occurs at the bonding interface or warping of the component occurs due to the difference in thermal expansion coefficients between the bonded substrate 21 or auxiliary substrate 21A and the bonded substrate 202.

[0014] For example, Figure 1b is a photograph showing that warpage (WP) occurred after the AMB heat dissipation substrate, using the comparative technology, was bonded to the base plate BP.

[0015] In heat dissipation substrates manufactured using the comparative AMB technology, there are considerable differences in the coefficients of thermal expansion (CTE) of the insulating substrate SS, upper copper plate T-Cu, lower copper plate B-Cu, SiC chip, and base plate BP. For example, the coefficient of thermal expansion of the AlN insulating substrate SS is 4.5 × 10⁻⁶. -6 The temperature is / ℃, and the thermal expansion coefficients of the upper and lower copper (T-Cu, B-Cu) are 16.0 × 10⁻⁶. -6 The temperature is / ℃, and the thermal expansion coefficient of the SiC chip is 4.0 × 10⁻⁶. -6 The temperature is / °C. However, in an ultra-high temperature operating environment of 300°C or higher, differences in the thermal expansion coefficients of each component constituting the power semiconductor module can cause warpage (WP) or separation between interfaces, as shown in Figure 1b, which can lead to malfunction of the power semiconductor module.

[0016] As a result, as described in prior art 1, when a separately manufactured vapor chamber heat spreader 102 is bonded to the heat dissipation substrate 21 or auxiliary heat dissipation substrate 21A with adhesive 80, the difference in the thermal expansion coefficients of the bonded components can cause separation at the bonding interface or warping of the components, impairing the heat dissipation function of the vapor chamber heat spreader 102. This can lead to rapid deterioration of the power semiconductor module, inducing thermal runaway and ultimately destroying the power semiconductor element, which has a serious impact on driver safety. [Prior art documents] [Patent Documents]

[0017] U.S. Published Patent Number (Publication Date): US2020 / 0132392A1 (2020.04.30) [Overview of the project] [Problems that the invention aims to solve]

[0018] One of the technical challenges of the embodiment is to solve the problem that when a vapor chamber heat spreader is bonded to a heat dissipation substrate with an adhesive, not only is the heat transfer path from the heat source electronic element to the vapor chamber heat spreader lengthened, but the presence of a separate adhesive layer between the vapor chamber heat spreader and the heat dissipation substrate generates thermal resistance, reducing heat transfer efficiency and thus degrading the heat dissipation performance of the working fluid vapor chamber heat spreader.

[0019] Furthermore, one of the technical challenges of the embodiment is to solve the problem of malfunction of the power semiconductor module caused by separation at the bonding interface or warping of the components when a heat dissipation substrate and a heat dissipation component are bonded together by an adhesive layer, due to the difference in the thermal expansion coefficients of the bonded components.

[0020] The technical problems of the embodiments are not limited to those described in this section, but also include those that can be understood from the description of the invention. [Means for solving the problem]

[0021] The heat dissipation substrate for a power semiconductor module according to the embodiment may include an insulating substrate 410, an intermediate metal plate 420 bonded to the bottom surface of the insulating substrate 410, a second metal plate 422 bonded to the bottom surface of the intermediate metal plate 420, and a first metal plate 421 bonded to the bottom surface of the second metal plate 422. The second metal plate 422 may include a hollow structure HE.

[0022] The second metal plate 422 is provided with a plurality of first through trenches E1 arranged in the first direction X, and may include a 2-1th metal plate 422a bonded to the insulating substrate 410.

[0023] The second metal plate 422 is provided with a plurality of second through trenches E2 arranged in a second direction Y perpendicular to the first direction X, and may include a 2-2nd metal plate 422b bonded to the bottom surface of the 2-1st metal plate 422a.

[0024] The first through trenches E1 and the second through trenches E2 may be three-dimensionally connected to form the hollow structure HE.

[0025] The 2-1st metal plate 422a may include a first body B1 between the plurality of spaced apart first through trenches E1, and the 2-2nd metal plate 422b may include a second body B2 between the plurality of spaced apart second through trenches E2.

[0026] A thickness T3 of the third metal plate 423 may be greater than a thickness of the first metal plate 421 or a thickness of the second metal plate.

[0027] The third metal plate may include a circuit pattern on a surface thereof.

[0028] The first metal plate, the second metal plate and the third metal plate may be made of the same metal material.

[0029] The second metal plate may be directly bonded to the bottom surface of the insulating substrate without an adhesive layer, and the first metal plate may be directly bonded to the bottom surface of the second metal plate without an adhesive layer.

[0030] The power semiconductor module according to the embodiment may include one of the aforementioned heat dissipation substrates for power semiconductor modules and power semiconductor elements disposed on the upper metal plate 423. The heat dissipation substrate for power semiconductor module according to the embodiment may also include a first metal plate 421, an insulating substrate 410 on the first metal plate 421, a second metal plate 422 bonded to the insulating substrate 410, and a third metal plate 423 bonded to the second metal plate 422.

[0031] The second metal plate 422 may include a hollow structure HE.

[0032] The method for manufacturing a heat dissipation substrate for a power semiconductor module according to the embodiment may include the steps of: preparing an insulating substrate; preparing a first metal plate, a second metal plate, an intermediate metal plate, and a third metal plate; sequentially stacking the first metal plate, the second metal plate, and the intermediate metal plate; stacking the insulating substrate on the intermediate metal plate; stacking the third metal plate on the insulating substrate to prepare a substrate stacking set; and performing a hot pressing process on the stacked substrate stacking set.

[0033] The second metal plate 422 may include a second-first metal plate 422a having a plurality of first through trenches E1 arranged in a first direction X, and a second-second metal plate 422b having a plurality of second through trenches E2 arranged in a second direction Y perpendicular to the first direction X.

[0034] Through the pressing process, the first through trench E1 and the second through trench E2 can be connected in three dimensions to form the hollow structure HE.

[0035] The second-first metal plate 422a may include a first body B1 between a plurality of spaced-apart first through trenches E1, and the second-second metal plate 422b may include a second body B2 between a plurality of spaced-apart second through trenches E2.

[0036] The second metal plate may be directly bonded to the bottom surface of the insulating substrate without an adhesive layer, and the first metal plate may be directly bonded to the bottom surface of the second metal plate without an adhesive layer. [Effects of the Invention]

[0037] One of the technical effects of this embodiment is that it can solve the problem of reduced heat dissipation performance of the working fluid vapor chamber heat spreader due to a decrease in heat transfer efficiency when the vapor chamber heat spreader is bonded to the heat dissipation substrate with an adhesive.

[0038] For example, according to the embodiment, since the hot press process is performed in a high-temperature and high-pressure vacuum environment, a heat dissipation substrate can be realized that integrates a metal plate having a hollow structure HE into which a working fluid can be filled. As a result, according to the embodiment, the heat transfer path between the power semiconductor element, which is the heat source, and the metal plate having the hollow structure HE is significantly shortened, improving the heat transfer efficiency, which in turn allows for efficient vaporization of the working fluid and significantly improves the heat dissipation performance.

[0039] Furthermore, according to the embodiment, by realizing a heat dissipation substrate that integrates a metal plate having a hollow HE structure that can encapsulate a working fluid within the heat dissipation substrate itself, the thermal resistance is reduced by eliminating the need for a separate adhesive layer, thereby improving heat transfer efficiency and significantly enhancing heat dissipation performance.

[0040] Furthermore, one of the technical effects of the embodiment is that, when a heat dissipation substrate and a heat dissipation component are bonded by an adhesive layer, the difference in the thermal expansion coefficients of the bonded components can cause separation at the bonding interface or warping of the components, which can lead to malfunctions of the power semiconductor module.

[0041] Specifically, according to the embodiment, since the hot press process is performed in a high-temperature and high-pressure vacuum environment, there is a technical advantage in that a metal plate having a hollow structure HE that can encapsulate the working fluid within the heat dissipation substrate itself can be formed integrally with the heat dissipation substrate 400.

[0042] For example, referring to Figure 2, the heat dissipation substrate 400 according to the embodiment not only has a substantially undivided interface between the second metal plate 422 having a hollow structure HE and the first metal plate 421 integrally bonded to its underside, but also, because the material of the second metal plate 422 having a hollow structure HE and the material of the first metal plate 421 integrally formed to its underside are the same, the difference in thermal expansion coefficients on both sides is eliminated, fundamentally preventing separation at the bonding interface or warping of components, and has a special technical effect of significantly improving the reliability of the power semiconductor module.

[0043] Furthermore, one of the technical effects of this embodiment is that, in the manufacturing process of the heat dissipation substrate 400, the corners of the spacer first and second metal plates, insulating substrate, and third metal plate, which are sequentially stacked, are aligned during the hot pressing process, resulting in a special technical effect that enables the realization of a high-quality heat dissipation substrate with an integrated hollow structure HE.

[0044] The technical effects of the examples are not limited to those described in this section, but also include those that can be understood from the description of the invention. [Brief explanation of the drawing]

[0045] [Figure 1a] Figure 1a is a diagram of Figure 2 relating to the power electronic assembly 10 of prior patent 1. [Figure 1b] Figure 1b is a photograph showing the warpage (WP) that occurred after the AMB heat dissipation substrate, using the comparative technology, was bonded to the base plate BP. [Figure 2] Figure 2 is a cross-sectional view of a power semiconductor module 501 including a heat dissipation substrate for power semiconductors according to the first embodiment. [Figure 3]Figure 3 is a cross-sectional view of a power semiconductor element 100 arranged on a power semiconductor module according to the first embodiment. [Figure 4] Figure 4 is a cross-sectional view of a power semiconductor module 502 including a heat dissipation substrate for power semiconductors according to the second embodiment. [Figure 5a] Figure 5a is a cross-sectional view of a power semiconductor module 503 including a heat dissipation substrate for power semiconductors according to the third embodiment. [Figure 5b] Figure 5b is a cross-sectional view of a power semiconductor module 504 including a heat dissipation substrate for power semiconductors according to the fourth embodiment. [Figure 6] Figure 6 is a flowchart of the manufacturing process for a heat dissipation substrate for power semiconductors according to an embodiment. [Figure 7] Figure 7 is a cross-sectional view of the manufacturing process of a heat dissipation substrate for power semiconductors according to an embodiment. [Figure 8] Figure 8 is a cross-sectional view of the manufacturing process of a heat dissipation substrate for power semiconductors according to an embodiment. [Figure 9a] Figure 9a is a cross-sectional view of the manufacturing process of a heat dissipation substrate for power semiconductors according to an embodiment. [Figure 9b] Figure 9b is a cross-sectional view of the manufacturing process of a heat dissipation substrate for power semiconductors according to an embodiment. [Figure 9c] Figure 9c is a cross-sectional view of the manufacturing process of a heat dissipation substrate for power semiconductors according to an embodiment. [Figure 10] Figure 10 is a cross-sectional view of the manufacturing process of a heat dissipation substrate for power semiconductors according to an embodiment. [Figure 11] Figure 11 is a cross-sectional view of the manufacturing process of a heat dissipation substrate for power semiconductors according to an embodiment. [Figure 12] Figure 12 is a cross-sectional view of the manufacturing process of a heat dissipation substrate for power semiconductors according to an embodiment. [Figure 13] Figure 13 is a first cross-sectional view of a power semiconductor module 501 including a heat dissipation substrate for a power semiconductor according to the first embodiment. [Figure 14] Figure 14 is a diagram showing a heat dissipation component 550 according to an embodiment, arranged on a semiconductor element chip on a circuit board 610. [Figure 15]Figure 15 is a circuit diagram illustrating a power converter 1000 to which the power semiconductor module according to the embodiment is applied. [Modes for carrying out the invention]

[0046] The invention relating to an embodiment for solving the above problem will be described in more detail below with reference to the drawings.

[0047] The power semiconductor module of this embodiment can be used in inverters and converters for automobiles, computers, home appliances, solar power, smart grids, and other applications. Furthermore, the power semiconductor module according to this embodiment can be applied to a wide variety of electrical and electronic devices, including electric vehicle chargers, power supply devices, and railways, in addition to eco-friendly vehicles.

[0048] <Power semiconductor module including heat dissipation substrate> (First embodiment) Figure 2 is a cross-sectional view of a power semiconductor module 501 including a heat dissipation substrate for power semiconductors according to the first embodiment, and Figure 3 is a cross-sectional view of a power semiconductor element 100 arranged on the power semiconductor module according to the first embodiment. Hereinafter, "first embodiment" may be abbreviated as "embodiment".

[0049] Referring to Figure 2, the power semiconductor module 501 according to the embodiment may include a heat dissipation substrate 400, a power semiconductor element 100, and wiring 130a.

[0050] For example, the power semiconductor module 501 according to the embodiment may include a heat dissipation substrate 400, power semiconductor elements 100 disposed on the heat dissipation substrate 400, and wiring 130a electrically connected to the power semiconductor elements 100. The power semiconductor elements 100 may, but are not limited to, bonded by a predetermined adhesive member 110.

[0051] Figure 2 illustrates an example in which a hollow structure HE capable of filling a working fluid is provided on the second metal plate 422, but the invention is not limited to this. For example, the hollow structure HE capable of filling a working fluid may be formed beneath the third metal plate 423 adjacent to the power semiconductor element 100 (see the third embodiment in Figure 5a).

[0052] In the embodiment, the power semiconductor element 100 may be bonded onto the heat dissipation substrate 400 by soldering, sintering bonding, transient liquid phase bonding (TLP bonding), ultrasonic bonding, or the like.

[0053] Referring to Figure 3, the power semiconductor device 100 according to the embodiment may include a drain electrode 105, a semiconductor epitaxial layer 120, a source electrode 145s, and a gate electrode 165g. The epitaxial layer 120 may, but is not limited to, SiC (silicon carbide). In the form of a MOSFET, the source electrode 145s or the gate electrode 165g may include an Al-based metal, and the drain electrode 105 may, but is not limited to, a Ti / Ni / Ag metal including a Ti layer, Ni layer, and Ag layer, or NiV / Ag, V(vanadium) / Ni / Ag, etc.

[0054] Referring again to Figure 2, the heat dissipation substrate 400 of the embodiment may include one or more metal plates and an insulating substrate 410. For example, the heat dissipation substrate 400 may include, but is not limited to, a first metal plate 421, a second metal plate 422, an intermediate metal plate 420, an insulating substrate 410, and a third metal plate 423. The intermediate metal plate 420 may be referred to as a fourth metal plate, but is not limited to that.

[0055] The insulating substrate 410 can electrically insulate the intermediate metal plate 420 and the third metal plate 423. The insulating substrate 410 may include a polycrystalline insulating substrate made of a ceramic material with high thermal conductivity. For example, the insulating substrate 410 may be one of AlN or Si3N4, but is not limited to these, and may also be Al2O3, etc. Hereinafter, the insulating substrate 410 will be described using a polycrystalline substrate made of a ceramic material as an example, but is not limited to this, and may also include single-crystal substrates such as sapphire substrates.

[0056] The first metal plate 421, the second metal plate 422, the intermediate metal plate 420, and the third metal plate 423 may contain, but are not limited to, Cu-based metals. For example, the first, second, and third metal plates 421, 422, and 423 may contain one or more of Al, Ni, Ag, Mg, and Zn.

[0057] The intermediate metal plate 420 has one side in contact with the insulating substrate 410 and the other side capable of dissipating heat. A heat dissipation means, such as a heat sink, is placed in close proximity to the underside of the first metal plate 421.

[0058] In the embodiment, the second metal plate 422 may include one or more metal plates. For example, the second metal plate 422 may include a 2-1 metal plate 422a having a first through trench E1 and a first body B1. The second metal plate 422 may further include a 2-2 metal plate 422b having a second body B2 and a second through trench E2 (see Figure 9a).

[0059] Referring again to Figure 2, the second metal plate 422 is shown to include a second-first metal plate 422a and a second-second metal plate 422b, but is not limited to this, and may also have a single second-first metal plate 422a (see the second embodiment in Figure 4).

[0060] The second metal plate 422 connects the first through trench E1 and the second through trench E2 in three dimensions to form a hollow structure HE, into which a working fluid (not shown), such as acetone, methanol, ethanol, or ultrapure water, is filled.

[0061] Furthermore, the first body B1 and the second body B2 of the second metal plate 422 may include a porous structure that can contain or absorb a working fluid. For example, the first body B1 and the second body B2 of the second metal plate 422 may be formed in a sintering process and include a porous structure. Alternatively, the first body B1 and the second body B2 of the second metal plate 422 may have grooves in the form of fine grooves on their side walls. Alternatively, the first body B1 and the second body B2 of the second metal plate 422 may include a porous structure in the form of a mesh.

[0062] According to the embodiment, the heat generated from the power semiconductor element 100 is efficiently transferred to the second metal plate 422 of the heat dissipation substrate, causing the working fluid to vaporize, absorb latent heat of vaporization, move toward the first metal plate 421 below, condense, and release latent heat of vaporization as it condenses into a liquid, and the condensed working fluid is absorbed by the porous structure of the second metal plate 422 and moves toward the insulating substrate 410. On the other hand, in the embodiment, the power semiconductor element 100, which is the heat source, can also be placed below the heat dissipation substrate 400, and the condensed working fluid can be moved using gravity.

[0063] Next, the third metal plate 423 may include multiple circuit patterns (not shown) formed by a patterning process such as etching, and the circuit patterns are electrically connected to the power semiconductor element 100. For example, as shown in Figure 2, one side of the circuit patterns on the third metal plate 423 may be electrically connected to the power semiconductor element 100 by wiring 130a such as a wire. The other side of the circuit patterns on the third metal plate 423 is connected to an external connection terminal. The external connection terminal can include an input power supply, a motor or inverter controller, etc. If the third metal plate 423 does not undergo a patterning process, the heat dissipation substrate 400 of the embodiment can be used as a heat dissipation component.

[0064] According to the power semiconductor module 501 including the heat dissipation substrate 400 for power semiconductors in the embodiment, since the hot press process is performed in a high-temperature and high-pressure vacuum environment, it is possible to realize a heat dissipation substrate that integrally includes a second metal plate 422 having a hollow structure HE that can enclose a working fluid within the heat dissipation substrate 400 itself.

[0065] As a result, according to the embodiment, the heat transfer path between the power semiconductor element 100, which is a heat source, and the second metal plate 422 having a hollow structure HE is shortened, improving the heat transfer efficiency and enabling efficient vaporization of the working fluid, thereby having the technical effect of significantly improving heat dissipation performance.

[0066] Furthermore, according to the embodiment, by integrating a second metal plate 422 having a hollow structure HE that can enclose the working fluid within the heat dissipation substrate 400 itself, without the need for a separate adhesive layer, heat is transferred to the second metal plate 422 having the hollow structure HE without passing through an adhesive layer that could induce thermal resistance. This results in improved heat transfer efficiency, efficient vaporization of the working fluid, and a significant improvement in heat dissipation performance.

[0067] Furthermore, in the heat dissipation substrate 400 according to the embodiment, not only is the interface between the second metal plate 422 having a hollow structure HE and the first metal plate 421 which is integrally bonded to its lower side without an adhesive layer substantially undivided, but the material of the second metal plate 422 having a hollow structure HE and the materials of the intermediate metal plate 420 and the first metal plate 421, which are integrally formed on its upper and lower sides, respectively, can be the same. As a result, the difference in thermal expansion coefficients between the first metal plate 421 and the second metal plate 422 is eliminated, fundamentally preventing separation at the bonding interface or warping of the components, and has the special technical effect of significantly improving the reliability of the power semiconductor module.

[0068] (Second example) Next, Figure 4 is a cross-sectional view of a power semiconductor module 502 including a heat dissipation substrate for a power semiconductor according to the second embodiment. The second embodiment can adopt the technical features of the first embodiment, and the main features of the second embodiment will be described below.

[0069] Referring to Figure 4, the power semiconductor module 502 according to the second embodiment may include a heat dissipation substrate 400, a power semiconductor element 100 disposed on the heat dissipation substrate 400, and wiring 130a electrically connected to the power semiconductor element 100. In addition, the second embodiment may include a hollow structure on a single second metal plate 422 that can be filled with a predetermined working fluid. For example, the second metal plate 422 of the second embodiment may include a trench E and a body B that can function as a hollow structure. The trench E of the second metal plate 422 can provide a three-dimensional hollow structure, and a working fluid (not shown), such as acetone, methanol, ethanol, or ultrapure water, may be filled into the hollow structure.

[0070] Furthermore, the body B of the second metal plate 422 may include a porous structure that can contain or absorb a working fluid. For example, the body B of the second metal plate 422 may be formed in a sintering process and include a porous structure. Alternatively, the body B of the second metal plate 422 may have fine grooves in its sidewalls. Alternatively, the body B of the second metal plate 422 may include a mesh-like porous structure.

[0071] According to the second embodiment, the heat generated from the power semiconductor element 100 is efficiently transferred to the second metal plate 422 of the heat dissipation substrate. As a result, the working fluid is vaporized by the hollow structure, absorbing the latent heat of vaporization, and moves towards the lower first metal plate 421, where it condenses and releases the latent heat of vaporization as it turns into a liquid. The condensed working fluid is then absorbed by the porous structure of the second metal plate 422 and moves towards the insulating substrate 410.

[0072] According to the power semiconductor module 502 including the power semiconductor heat dissipation substrate 400 of the second embodiment, since the hot press process is performed in a high-temperature and high-pressure vacuum environment, it is possible to realize a heat dissipation substrate that integrally includes a second metal plate 422 having a hollow structure in which a working fluid can be sealed within the heat dissipation substrate 400 itself. As a result, according to the second embodiment, the heat transfer path between the power semiconductor element 100, which is the heat source, and the second metal plate 422 having a hollow structure is shortened, improving the heat transfer efficiency and enabling efficient vaporization of the working fluid, thereby having the technical effect of significantly improving heat dissipation performance.

[0073] In particular, the second embodiment has the technical effect of significantly improving heat dissipation performance by further shortening the heat transfer path between the power semiconductor element 100, which is a heat source, and the second metal plate 422 having a hollow structure that can encapsulate a working fluid, thereby improving heat transfer efficiency. Furthermore, according to the second embodiment, a heat dissipation substrate can be realized in which the second metal plate 422 having a hollow structure that can encapsulate a working fluid is integrated into the heat dissipation substrate 400 itself without the interposition of a separate adhesive layer. As a result, heat is transferred to the second metal plate 422 having a hollow structure without passing through an adhesive layer that may induce thermal resistance, thereby improving heat transfer efficiency and significantly improving heat dissipation performance.

[0074] Furthermore, in the heat dissipation substrate 400 according to the second embodiment, not only is the interface between the second metal plate 422 having a hollow structure and the intermediate metal plate 420 and first metal plate 421 which are integrally bonded to its upper and lower sides without adhesive layers, respectively, substantially undivided, but the material of the second metal plate 422 having a hollow structure and the materials of the intermediate metal plate 420 and first metal plate 421 integrally formed to its upper and lower sides, respectively, can be the same. As a result, the difference in thermal expansion coefficients between the first metal plate 421 and the second metal plate 422 is eliminated, fundamentally preventing separation at the bonding interface or warping of components, and has the special technical effect of significantly improving the reliability of the power semiconductor module.

[0075] (Third embodiment) Figure 5a is a cross-sectional view of a power semiconductor module 503 including a heat dissipation substrate for a power semiconductor according to the third embodiment. The third embodiment can adopt the technical features of the first or second embodiment, and the main features of the third embodiment will be described below. Referring to Figure 5a, the power semiconductor module 503 according to the third embodiment may include a heat dissipation substrate 400, power semiconductor elements 100 disposed on the heat dissipation substrate 400, and wiring 130a electrically connected to the power semiconductor elements 100.

[0076] The heat dissipation substrate 400 of the power semiconductor module 503 according to the third embodiment may include, but is not limited to, an insulating substrate 410, a first metal plate 421, an intermediate metal plate 420, a second metal plate 422, and a third metal plate 423.

[0077] In the third embodiment, a hollow structure HE capable of filling a working fluid is placed between the power semiconductor element 100 and the insulating substrate 410. For example, in the third embodiment, the second metal plate 422 is placed between the insulating substrate 410 and the third metal plate 423, and the second metal plate 422 may have the hollow structure HE. In the third embodiment, the power semiconductor element 100 is placed on the third metal plate 423, but is not limited to this.

[0078] The second metal plate 422 of the third embodiment may include one or more metal plates. For example, the second metal plate 422 may include a 2-1 metal plate 422a having a first through trench E1 and a first body B1. The second metal plate 422 may further include a 2-2 metal plate 422b having a second body B2 and a second through trench E2. The first trench E1 and the second trench E2 of the second metal plate 422 can provide a three-dimensional hollow structure into which a working fluid (not shown), such as acetone, methanol, ethanol, or ultrapure water, is filled.

[0079] Furthermore, the first body B1 and the second body B2 of the second metal plate 422 may include a porous structure that can contain or absorb a working fluid. For example, the first body B1 and the second body B2 of the second metal plate 422 may be formed in a sintering process and include a porous structure. Alternatively, the first body B1 and the second body B2 of the second metal plate 422 may have fine grooves in the form of grooves on their side walls. Alternatively, the first body B1 and the second body B2 of the second metal plate 422 may include a porous structure in the form of a mesh.

[0080] On the other hand, in the field of conventional heat dissipation substrate technology, heat generation problems were solved by separately bonding or arranging various heat dissipation components such as heat sinks, heat dissipation plates, heat pipes, and vapor chambers to the heat dissipation substrate. However, there was no consideration or research given to integrating heat dissipation components into the metal plate that constitutes the heat dissipation substrate itself. Furthermore, the heat dissipation substrate has an insulating substrate and a lower metal plate and an upper metal plate positioned above and below it, respectively. The "upper metal plate" functions not only as a heat dissipation function but also as a wiring substrate on which circuit patterns are formed by etching.

[0081] Consequently, in the field of conventional heat dissipation substrate technology, there had been no attempts to integrally form a metal plate with a hollow structure with the heat dissipation substrate. In particular, the idea of ​​having a hollow structure in the "upper metal plate" on which the circuit pattern is formed was difficult to consider because there was a risk of the hollow structure being damaged by etching. Furthermore, even if the idea of ​​having a hollow structure in the "upper metal plate" was considered, etching would expose the insulating substrate, making it difficult to form precise circuit patterns on the "upper metal plate" where the circuit pattern is formed. After considerable internal research, it was determined that this was an extremely difficult technical challenge.

[0082] On the other hand, according to the third embodiment, a second metal plate 422 having a grid-shaped hollow structure is positioned above the insulating substrate 410, and a hot press process is performed in a high-temperature and high-pressure vacuum environment, thereby realizing a heat dissipation substrate in which the second metal plate 422 having a hollow structure capable of enclosing a working fluid is integrally provided on the upper metal plate.

[0083] For example, according to the third embodiment, a second metal plate 422 is prepared in a grid configuration in which a hollow structure is not placed in the first region that is removed by etching, and a hollow structure is placed in the second region that is not removed by etching. Then, a hot press process is performed in a high-temperature and high-pressure vacuum environment while the plates are stacked.

[0084] For example, Figure 5a is a cross-sectional view of the second region of the second metal plate where the hollow structure HE is located.

[0085] As a result, according to the third embodiment, even though the second region of the upper second metal plate on which the circuit pattern is formed has a hollow structure, the subsequent etching process is carried out in the first region where the hollow structure is not located, exposing the insulating substrate and thus forming the circuit pattern. As a result, according to the third embodiment, there is a special technical effect that solves the technical contradiction that occurs when the "upper metal plate" has a hollow structure, in which case the hollow structure is damaged by etching.

[0086] According to the third embodiment, the heat generated from the power semiconductor element 100 is efficiently transferred to the second metal plate 422, causing the working fluid to vaporize through its hollow structure, absorbing latent heat of vaporization. It then moves towards the lower insulating substrate 410 and the first metal plate 421, condensing and releasing latent heat of vaporization as it condenses into a liquid. The condensed working fluid is then absorbed by the porous structure of the second metal plate 422 and moves towards the third metal plate 423.

[0087] According to the power semiconductor module 503 including the heat dissipation substrate 400 for power semiconductors according to the third embodiment, since the hot press process is performed in a high-temperature and high-pressure vacuum environment, it is possible to realize a heat dissipation substrate that integrally includes a second metal plate 422 having a hollow structure in which a working fluid can be sealed within the heat dissipation substrate 400 itself.

[0088] As a result, according to the third embodiment, the heat transfer path between the power semiconductor element 100, which is a heat source, and the second metal plate 422 having a hollow structure is significantly shortened, improving the heat transfer efficiency. This allows for efficient vaporization of the working fluid, resulting in a significant improvement in heat dissipation performance.

[0089] In particular, the third embodiment has the technical effect of significantly improving heat dissipation performance by placing a second metal plate 422, which has a hollow structure capable of enclosing a working fluid, between the power semiconductor element 100 and the insulating substrate 410, thereby significantly shortening the heat transfer path between the power semiconductor element 100, which is a heat source, and the second metal plate 422 having a hollow structure.

[0090] Furthermore, according to the third embodiment, a heat dissipation substrate can be realized that integrates a second metal plate 422 having a hollow structure that can encapsulate a working fluid within the heat dissipation substrate 400 itself, without the need for a separate adhesive layer. As a result, heat is transferred to the second metal plate 422 having a hollow structure via the third metal plate 423 without passing through an adhesive layer that could induce thermal resistance, thereby improving heat transfer efficiency and significantly enhancing heat dissipation performance.

[0091] Furthermore, in the heat dissipation substrate 400 according to the third embodiment, not only is the interface between the second metal plate 422 having a hollow structure and the third metal plate 423 which is integrally bonded to its upper surface without an adhesive layer substantially undivided, but the material of the second metal plate 422 having a hollow structure and the material of the third metal plate 423 integrally formed on its upper surface can be the same. As a result, the difference in thermal expansion coefficients between the second metal plate 422 and the third metal plate 423 is eliminated, fundamentally preventing separation at the bonding interface or warping of the components, and has the special technical effect of significantly improving the reliability of the power semiconductor module.

[0092] (Fourth embodiment) Next, Figure 5b is a cross-sectional view of a power semiconductor module 504 including a heat dissipation substrate for a power semiconductor according to the fourth embodiment. The fourth embodiment can adopt the technical features of the first to third embodiments, and the main features of the fourth embodiment will be described below.

[0093] Referring to Figure 5b, the power semiconductor module 504 according to the fourth embodiment may include a heat dissipation substrate 400, power semiconductor elements 100 disposed on the heat dissipation substrate 400, and wiring 130a electrically connected to the power semiconductor elements 100.

[0094] The power semiconductor module 504 according to the fourth embodiment may include a lower intermediate metal plate 420b, a lower second metal plate 422b, and a first metal plate 421, which are located below the insulating substrate 410.

[0095] Furthermore, the power semiconductor module 504 according to the fourth embodiment may include an upper intermediate metal plate 420a, an upper second metal plate 422a, and a third metal plate 423, which are arranged above the insulating substrate 410.

[0096] In the fourth embodiment, a first hollow structure HE1 capable of filling a working fluid is placed between the power semiconductor element 100 and the insulating substrate 410.

[0097] For example, in the fourth embodiment, the upper second metal plate 422a is positioned between the insulating substrate 410 and the third metal plate 423, and the upper second metal plate 422a may have a first hollow structure HE1.

[0098] The upper second metal plate 422a may include one or more metal plates. For example, the upper second metal plate 422a may include a second-first metal plate 422a having a first through trench E1 and a first body B1. The upper second metal plate 422a may further include a second-second metal plate 422b having a second body B2 and a second through trench E2. The first trench E1 and second trench E2 of the upper second metal plate 422a can provide a three-dimensional hollow structure into which a working fluid (not shown), such as acetone, methanol, ethanol, or ultrapure water, can be filled. The first body B1 and second body B2 of the upper second metal plate 422a may also include a porous structure into which a working fluid can be contained or absorbed.

[0099] According to the fourth embodiment, by positioning an upper second metal plate 422a having a grid-shaped hollow structure above the insulating substrate 410 and performing a hot press process in a high-temperature and high-pressure vacuum environment, a heat dissipation substrate can be realized in which the upper second metal plate 422a having a hollow structure capable of enclosing a working fluid is integrally provided with the upper metal plate.

[0100] For example, according to the fourth embodiment, the upper second metal plate 422a is prepared in a grid configuration in which the hollow structure is not placed in the first region that is removed by etching, and the hollow structure is placed in the second region that is not removed by etching. Then, in a stacked state, a hot press process is performed in a high-temperature and high-pressure vacuum environment. For example, Figure 5b is a cross-sectional view of the second region of the upper second metal plate in which the first hollow structure HE1 is placed.

[0101] As a result, according to the fourth embodiment, even though the second region of the upper second metal plate on which the circuit pattern is formed has a hollow structure, the subsequent etching process is carried out in the first region where the hollow structure is not located, exposing the insulating substrate and thus forming the circuit pattern. As a result, according to the fourth embodiment, there is a special technical effect that solves the technical contradiction that occurs when the "upper metal plate" has a hollow structure, in which case the hollow structure is damaged by etching.

[0102] Furthermore, in the fourth embodiment, a second hollow structure HE2 capable of filling a working fluid is placed between the insulating substrate 410 and the first metal plate 421. For example, the lower second metal plate 422b of the fourth embodiment is placed between the insulating substrate 410 and the first metal plate 421, and the lower second metal plate 422b may have the second hollow structure HE2.

[0103] The lower second metal plate 422b may include one or more metal plates. For example, the lower second metal plate 422b may include a second-first metal plate 422a having a first through trench E1 and a first body B1. The lower second metal plate 422b may further include a second-second metal plate 422b having a second body B2 and a second through trench E2. The first trench E1 and second trench E2 of the lower second metal plate 422b can provide a three-dimensional hollow structure into which a working fluid (not shown), such as acetone, methanol, ethanol, or ultrapure water, is filled. The first body B1 and second body B2 of the lower second metal plate 422b may also include a porous structure into which a working fluid can be contained or absorbed.

[0104] According to the fourth embodiment, a heat dissipation substrate can be realized in which a lower second metal plate 422b having a hollow structure is positioned below the insulating substrate 410, and a hot press process is performed in a high-temperature and high-pressure vacuum environment, thereby integrally providing the lower second metal plate 422b having a hollow structure that can contain a working fluid with the lower metal plate.

[0105] According to the fourth embodiment, the heat generated from the power semiconductor element 100 is efficiently transferred to the upper second metal plate 422a, causing the working fluid to vaporize through the first hollow structure HE1 and absorb latent heat of vaporization. The absorbed latent heat is then moved and released towards the lower insulating substrate 410 and the lower second metal plate 422b and first metal plate 421, which are equipped with the second hollow structure HE2.

[0106] According to the fourth embodiment of the power semiconductor module 504, by realizing a heat dissipation substrate that integrally includes an upper second metal plate 422a having a first hollow structure HE1 into which a working fluid can be sealed in the heat dissipation substrate 400 itself by a hot press process in a high-temperature and high-pressure vacuum environment, and a lower second metal plate 422b having a second hollow structure HE2, there is a technical effect of significantly improving heat dissipation performance.

[0107] The following describes the technical features of the "power semiconductor module including a heat dissipation substrate" of this application, while explaining the "manufacturing process of a heat dissipation substrate for power semiconductors."

[0108] The following description will focus on the manufacturing process of the power semiconductor module 501 according to the first embodiment, but this manufacturing process can also be applied to the second to fourth embodiments.

[0109] <Manufacturing process for heat dissipation substrates for power semiconductors> Figure 6 is a schematic process flowchart of the manufacturing process for a heat dissipation substrate for power semiconductors according to an embodiment.

[0110] The manufacturing process for the heat dissipation substrate for power semiconductors according to the embodiment can be broadly defined as including (1) a pre-treatment process for the insulating substrate, (2) a sputtering process, (3) a pre-treatment process for the metal plate, (4) a lamination process for the insulating substrate and the metal plate, (5) a hot press process for the insulating substrate and the metal plate, (6) an etching process for the heat dissipation substrate, and (7) an inspection and cutting process for the heat dissipation substrate. The overall manufacturing process for the heat dissipation substrate for power semiconductors according to the embodiment is controlled by a control unit (not shown) of a central server, which may include a data storage unit (not shown).

[0111] The main manufacturing process of the heat dissipation substrate for power semiconductors according to the embodiment will be described below with reference to the drawings.

[0112] (1) Pretreatment process for insulating substrate The pretreatment process for the insulating substrate will be explained below with reference to Figure 7. In this embodiment, the pretreatment process for the insulating substrate is performed using a substrate cleaning device (not shown) before the lamination process of the insulating substrate and the metal plate.

[0113] The pre-treatment process for insulating substrates may include: 1) loading the insulating substrate, 2) unique code UC marking, 3) cleaning the insulating substrate, 4) measuring the thickness of the insulating substrate, and 5) loading the insulating substrate into the magazine.

[0114] 1. Loading stage of insulating substrate First, as shown in Figure 7, a predetermined insulating substrate base material SS is prepared and loaded into a substrate cleaning device (not shown). The insulating substrate base material SS may be AlN, Si3N4, or Al2O3, but is not limited to these, and can also include single-crystal substrates such as sapphire substrates. The surface of the insulating substrate 410 may have irregularities R ranging in size from several μm to several hundred μm, but is not limited to these.

[0115] 2. Unique Code UC Marking Process According to the embodiment, a unique code UC is marked on the insulating substrate base material SS loaded into the substrate cleaning device. Thereafter, the unique code UC is read and transmitted wirelessly to the data storage unit of the server for storage, and detailed information on the "individual heat dissipation substrates," including the "individual insulating substrates," is precisely updated and managed in subsequent processes.

[0116] The insulating substrate base material SS may include an effective region AA and a dummy region DA. The unique code UC is marked in the dummy region DA of the insulating substrate base material SS. The unique code UC may include, but is not limited to, a DMC (Digital Matrix Code), a QR code (registered trademark), or a barcode. The unique code UC may be marked by, but is not limited to, laser marking technology.

[0117] In this embodiment, in addition to the unique code UC, a unique ID such as a serial number may also be marked in the dummy area DA of the insulating substrate base material SS.

[0118] 3. Cleaning process for insulating substrate and 4. Thickness measurement process Next, referring to Figure 7, a CDA (Clean Dried Air) cleaning process CL is performed on the insulating substrate base material SS. In this embodiment, after cleaning the insulating substrate SS, the thickness can be measured at nine points using a displacement sensor (TM), but this is not the only method.

[0119] 5. Loading process of insulating substrate The insulating substrate base material is loaded into a predetermined substrate magazine (not shown) and then transferred to a predetermined lamination apparatus. In this embodiment, each substrate magazine may also be marked with a predetermined unique ID or code. This allows for precise control of the lamination and bonding processes in the subsequent lamination process, which follows the sputtering process, by reading the unique ID of the substrate magazine and performing the lamination and bonding processes in the order necessary for manufacturing the heat dissipation substrate.

[0120] (2) Sputtering process As mentioned earlier, the insulating substrates are loaded into a substrate magazine and transferred to the sputtering apparatus. After being unloaded individually, each insulating substrate is mounted in the sputtering apparatus and the sputtering process is carried out.

[0121] The "sputtering process for insulating substrates" in this embodiment will now be explained with reference to Figure 8.

[0122] Referring to Figure 8, a bonding metal layer 411 of a first thickness is formed on one surface of the insulating substrate base material SS by sputtering. At this time, the unique code UC and unique ID areas are protected by being shielded by the thermal sprayed part PS during the sputtering process, and it is possible to control the process so that sputtering does not occur in the unique code UC and unique ID areas.

[0123] For example, an insulating substrate base material SS is mounted on an anode electrode plate equipped with a predetermined PVD coating, and a bonding metal layer 411 containing Ti or TiW is deposited in an inert atmosphere such as Ar gas to a first thickness of approximately 2,000 Å to 4,000 Å.

[0124] Next, a diffusion metal layer 412 is formed on the bonding metal layer 411 by sputtering. The diffusion metal layer 412 is deposited by sputtering to a second thickness that is greater than the first thickness of the bonding metal layer 411.

[0125] The diffusing metal layer 412 may have a melting point lower than the temperature of the subsequent hot pressing process for joining. For example, the hot pressing temperature may be in the range of about 900°C to 1100°C, and the diffusing metal layer 412 may have a melting point below 900°C and be a material with excellent diffusion properties. For example, the diffusing metal layer 412 may be one or more of Al, Ag, Au, and Sn, but is not limited to these.

[0126] Next, after flipping over the insulating substrate base material SS on one surface to which the diffusion metal layer 412 has been deposited, the bonding metal layer 411 and the diffusion metal layer 412 can be sequentially deposited on the opposite side by sputtering.

[0127] According to the embodiment, by making the first and second bonding metal layers 411 and 412 thin and reducing the thermal resistance, there is a technical effect that the heat dissipation performance of the heat dissipation substrate can be improved.

[0128] In this embodiment, the thickness of the bonding metal layer 411 and the diffusion metal layer 412 is measured for each individual insulating substrate 410 after sputtering, and the thickness data for each unique code UC is transmitted to a server for update management. For example, in this embodiment, the thickness of the bonded metal layer 411 and the diffusion metal layer 412 that have been deposited can be measured by measuring the surface resistance of the individual insulating substrate 410, but this is not limited to this. After the thickness measurement of the bonded metal layer 411 and the diffusion metal layer 412 has been completed, the individual insulating substrates 410 are transferred to the lamination apparatus which has been reloaded into the substrate magazine.

[0129] (3) Pretreatment process for metal plates The metal plate pretreatment process according to the embodiment will be described below with reference to Figures 9a and 9b. The metal plate may include one or more metal plates. For example, the metal plate may include, but is not limited to, a first metal plate 421, a second metal plate 422, an intermediate metal plate 420, and a third metal plate 423.

[0130] The metal plate may be a metal plate with excellent electrical and thermal conductivity. For example, the metal plate may be a Cu plate or a Cu alloy plate, but is not limited to these. For example, the metal plate may contain one or more of Al, Ni, Ag, Mg, and Zn. The metal plate may also be referred to as a metal substrate. In the embodiment, the first metal plate 421, the second metal plate 422, the intermediate metal plate 420, and the third metal plate 423 may be marked with a predetermined unique ID or unique code.

[0131] The pretreatment process for the metal plate may include a cleaning process and a thickness measurement process. The metal plates can be classified into several groups according to their thickness. For example, the metal plates can be classified, but are not limited to, a first metal plate 421, a second metal plate 422, an intermediate metal plate 420, and a third metal plate 423 according to their thickness. The third metal plate 423 may be thicker than the first and second metal plates 421 and 422, but are not limited to that.

[0132] The first metal plate 421 may have a first thickness T1. For example, the first metal plate 421 may have a first thickness T1 of 100 μm to 300 μm.

[0133] Furthermore, the intermediate metal plate 420 may have a third thickness T3. For example, the intermediate metal plate 420 may have a third thickness T3 of 100 μm to 300 μm.

[0134] Furthermore, the second metal plate 422 may have a second-first metal plate 422a having a second-first thickness T2a and a second-second metal plate 422b having a second-second thickness T2b. For example, the second-first metal plate 422a may have a second-first thickness T2a of 100 μm to 300 μm. The second-second metal plate 422b may have a second-second thickness T2b of 100 μm to 300 μm.

[0135] Referring to Figure 9c, the second-first metal plate 422a may include a plurality of "sub-metal plates" that are separated into "individual heat dissipation substrates" by laser scribing and breaking processes after the hot pressing process. For example, the second-first metal plate 422a may include the first to ninth sub-metal plates 422a1, 422a2, 422a3, 422a4, 422a5, 422a6, 422a7, 422a8, and 422a9.

[0136] Figures 9a to 12 primarily illustrate the regions corresponding to each "sub-metal plate" separated into "individual heat dissipation substrates". For example, the second-first metal plate 422a shown in Figure 9a can correspond to the first sub-metal plate 422a1 shown in Figure 9c, but is not limited to this. Furthermore, the other metal plates shown in Figures 9a to 12, such as the first metal plate 421, the second-second metal plate 422b, the intermediate metal plate 420, and the third metal plate 423, are also primarily illustrated with the metal plate region corresponding to the "first sub-metal plate 422a1" shown in Figure 9c.

[0137] Referring to Figure 9a, the second-first metal plate 422a can include a plurality of first through trenches E1 arranged in a first direction X. The second-second metal plate 422b can also include a plurality of second through trenches E2 arranged in a second direction Y perpendicular to the first direction X. Subsequently, in a hot pressing process, the first through trenches E1 and the second through trenches E2 can be connected three-dimensionally to form a hollow structure HE.

[0138] The second-first metal plate 422a may include a first body B1 between a plurality of spaced first through trenches E1, and the second-second metal plate 422b may include a second body B2 between a plurality of spaced second through trenches E2. The second body B2 of the second-second metal plate 422b and the first body B1 of the second-first metal plate may have a porous structure that can induce capillary action.

[0139] For example, the first body B1 of the second-first metal plate 422a and the second body B2 of the second-second metal plate 422b may include a porous structure in which a working fluid can be contained or absorbed. For example, the first body B1 and the second body B2 of the second metal plate 422 may be formed in a sintering process and include a porous structure. Alternatively, the first body B1 and the second body B2 of the second metal plate 422 may have grooves in the form of fine grooves on their side walls. Alternatively, the first body B1 and the second body B2 of the second metal plate 422 may include a porous structure in the form of a mesh. On the other hand, in this embodiment, the power semiconductor element 100, which is a heat source, can be placed below the heat dissipation substrate 400, and the condensed working fluid can be moved using gravity.

[0140] Conventionally, there have been no attempts to integrate a porous structure into the heat dissipation substrate itself in the field of heat dissipation substrates. Even in internal research, there were considerable technical challenges, such as porosity buckling, when trying to create a porous structure in the heat dissipation substrate itself by hot pressing. On the other hand, according to the embodiment, porosity buckling can be prevented by forming a porous structure in the second metal plate 422 during the sintering process. Furthermore, according to the embodiment, porosity buckling can be prevented by providing grooves in the sidewall. In addition, according to the embodiment, there is a technical effect in preventing porosity buckling during the hot pressing process by embodying pores in a cross shape.

[0141] Furthermore, according to the embodiment, the hot pressing process can be carried out after impregnating the porous structure provided in the second metal plate with a predetermined fluid before the hot pressing process. This has a special technical effect in that the porous structure is maintained by the vapor pressure of the fluid, thereby preventing buckling of the pores.

[0142] Next, referring to Figure 9b, the third metal plate 423 can have a fourth thickness T4. For example, the third metal plate 423 can have a fourth thickness T4 of 600 μm to 900 μm.

[0143] In the embodiment, the first metal plate 421, the second-first metal plate 422a, the second-second metal plate 422b, the intermediate metal plate 420, and the third metal plate 423 may be marked with a predetermined unique ID or unique code. At this time, the metal plates, each with a thickness or through trench, are loaded into the first metal magazine, the second-first metal magazine, the second-second metal magazine, the intermediate metal magazine, and the third metal magazine, respectively, and then transferred to a predetermined stacking device. In the embodiment, each of the first, second-first, second-second, intermediate, and third metal magazines may be marked with a predetermined unique ID or unique code.

[0144] According to the embodiment, metal plates are classified and loaded into first, second-first, second-second, intermediate, or third metal magazines according to their thickness, presence or absence of through trenches, and direction. Information regarding the thickness of individual metal plates and metal magazines, information regarding through trenches, and classification and loading information are stored and managed on a higher-level server.

[0145] Furthermore, the unique information of each individual metal plate is precisely updated and managed, including information about which metal magazine it was loaded into.

[0146] This allows the subsequent lamination process to precisely match the lamination order by reading the unique IDs of the first, second-1, second-2, intermediate, or third metal magazines, and then the hot pressing process is carried out.

[0147] (4) Lamination process of insulating substrate and metal plate Next, we will explain the lamination process of the insulating substrate and the metal plate with reference to Figure 10.

[0148] Figure 10 is a conceptual diagram of an embodiment in which an insulating substrate and a metal plate are stacked.

[0149] A first laminated set ST1, which will serve as the heat dissipation substrate 410 of the embodiment (see Figure 12), is prepared (see Figure 10).

[0150] For example, referring to Figure 10, a first metal plate 421, a second-second metal plate 422b, a second-first metal plate 422a, an intermediate metal plate 420, an insulating substrate 410, a third metal plate 423, and a second carbon spacer (not shown) are sequentially stacked on a first carbon spacer (not shown). In this embodiment, graphite (not shown) can be stacked after 10 stacking sets have been made, but the invention is not limited to this.

[0151] According to the embodiment, the stacked unit set is placed in a hot press while maintaining alignment, and the hot pressing process is carried out in a special technical manner, which enables the realization of a high-quality heat dissipation substrate with a hollow HE structure without misalignment of the stacked set.

[0152] Furthermore, according to the embodiment, the laminated set is placed in the hot press while maintaining alignment, and the hot pressing process is carried out. In addition, carbon spacers are placed at the top and bottom to cancel out pressure deviations, which has the technical effect of forming a uniform pressure distribution and reducing the risk of cracks occurring in the ceramic.

[0153] (5) Hot pressing process of insulating substrate and metal plate Next, the hot press joining process of the embodiment will be explained with reference to Figure 11.

[0154] Referring to Figure 11, a hot press process can be performed under vacuum conditions on a stacked set placed in a hot press apparatus (not shown) to manufacture a heat dissipation substrate 400 for a power semiconductor module according to the embodiment, as shown in Figure 12.

[0155] The temperature of the hot pressing process may be about 900°C to 1,100°C. Preferably, the temperature of the hot pressing process may be about 950°C to 1,000°C, but is not limited thereto. The vacuum level of the hot pressing process is 1.0 × 10⁻⁶ -1 The vacuum level may be higher than Torr, but is not limited thereto. Furthermore, the pressure in the hot pressing process may be between approximately 10 MPa and approximately 100 MPa, but is not limited thereto.

[0156] Conventional technologies employ a variety of heat dissipation components and modules, such as heat sinks, heat dissipation plates, heat pipes, and vapor chambers, to solve the heat generation problem of electronic elements such as power semiconductor modules.

[0157] However, in conventional technology, heat dissipation components such as vapor chamber heat spreaders, which are manufactured separately, are bonded to the heat dissipation substrate by a predetermined adhesive layer. In this case, not only is the heat transfer path from the heat source electronic element to the vapor chamber heat spreader 102 lengthened, but the heat transfer efficiency decreases, and the vaporization of the working fluid does not occur sufficiently, resulting in a problem of reduced heat dissipation performance.

[0158] Furthermore, the difference in thermal expansion coefficients between the separately bonded components and the heat dissipation substrate can cause separation at the bonding interface or warping of the components, potentially leading to malfunctions in the power semiconductor module.

[0159] Thus, one of the technical challenges of the embodiment is that when the vapor chamber heat spreader 102 is bonded to the substrate 21 or auxiliary substrate 21A with adhesive 80, not only is the heat transfer path from the heat source electronic element 20 to the vapor chamber heat spreader 102 lengthened, but the heat transfer efficiency decreases and the heat dissipation performance deteriorates due to the interposition of a separate adhesive layer between the vapor chamber heat spreader 102 and the substrate 21 or auxiliary substrate 21A.

[0160] Furthermore, one of the technical challenges of the embodiment is to solve the problem of malfunction of the power semiconductor module caused by separation at the bonding interface or warping of the components when a heat dissipation substrate and a heat dissipation component are bonded together by an adhesive layer, due to the difference in the thermal expansion coefficients of the bonded components.

[0161] On the other hand, in the field of conventional heat dissipation substrate technology, heat generation problems were solved by separately attaching or arranging various heat dissipation components such as heat sinks, heat dissipation plates, heat pipes, and vapor chambers to the heat dissipation substrate. However, there had been no consideration or research into integrating heat dissipation components into the metal plate that constitutes the heat dissipation substrate itself.

[0162] Specifically, when directly bonding two Cu metal plates, the oxide layer formed on the Cu surface prevents proper Cu-to-Cu bonding. Furthermore, the oxide layer present at the bonding interface induces high electrical and thermal resistance, degrading the thermal and electrical properties of the heat dissipation substrate.

[0163] On the other hand, in the field of conventional heat dissipation substrate technology, there had been no attempts to integrally form a metal plate with a hollow structure with the heat dissipation substrate, and there were considerable technical difficulties in realizing this during research in internal comparison technology.

[0164] On the other hand, according to the power semiconductor module 501 including the heat dissipation substrate 400 for power semiconductors according to the embodiment, since the hot press process is performed in a high-temperature and high-pressure vacuum environment, it is possible to realize a heat dissipation substrate that integrates a second metal plate 422 having a hollow structure HE that can enclose a working fluid within the heat dissipation substrate 400 itself.

[0165] As a result, according to the embodiment, the heat transfer path between the power semiconductor element 100, which is a heat source, and the second metal plate 422 having a hollow structure HE is significantly shortened, improving the heat transfer efficiency. This allows for efficient vaporization of the working fluid, resulting in a significant improvement in heat dissipation performance.

[0166] Furthermore, according to the embodiment, by integrating a second metal plate 422 having a hollow structure HE that can enclose a working fluid into the heat dissipation substrate 400 itself, heat is transferred to the second metal plate 422 having a hollow structure HE without passing through a separate adhesive layer. This has the technical effect of improving heat transfer efficiency, enabling efficient vaporization of the working fluid, and significantly improving heat dissipation performance.

[0167] Furthermore, the heat dissipation substrate 400 according to the embodiment not only has a substantially undivided interface between the second metal plate 422 having a hollow structure HE and the first metal plate 421 integrally bonded to its underside, but also, because the material of the second metal plate 422 having a hollow structure HE and the material of the first metal plate 421 integrally formed to its underside are the same, the difference in thermal expansion coefficients on both sides is eliminated, fundamentally preventing separation at the bonding interface or warping of components, and has a special technical effect of significantly improving the reliability of the power semiconductor module.

[0168] (6) Inspection, etching, and cutting processes for heat dissipation substrates, etc. The following describes the inspection, etching, and cutting processes for the heat dissipation substrate. Each heat dissipation substrate manufactured in the hot press bonding process undergoes a cleaning, inspection, and etching process.

[0169] For example, the heat dissipation substrate 400 of the embodiment, manufactured by a hot press bonding process, may undergo brush cleaning, water washing, and drying processes, but is not limited to this.

[0170] Furthermore, the embodiment involves ultrasonic inspection of the bonding interface of a heat dissipation substrate manufactured by hot pressing. For example, according to the embodiment, the ultrasonic inspection equipment can be used to inspect the interface thickness, presence or absence of voids, and presence or absence of cracks at the bonding interface of individual heat dissipation substrates.

[0171] According to the embodiment, after the hot-press bonding process, a portion of the metal plate in each heat dissipation substrate dummy area can be removed to open the unique code UC formed in the dummy area. This has a special technical effect in that, after the hot-pressing process, inspection information regarding the interface thickness, presence or absence of voids, and presence or absence of cracks at the bonding interface to the individual heat dissipation substrates can be precisely updated and managed.

[0172] Subsequently, an etching process is performed to form a circuit pattern on the heat dissipation substrate that has been determined to be a good product in the inspection process. For example, a circuit pattern can be formed on the third metal plate 423 by the etching process on the heat dissipation substrate 400 of the embodiment in which the hot pressing process was performed.

[0173] For example, the third metal plate 423 may include multiple circuit patterns (not shown) formed by a patterning process such as etching, and the circuit patterns are electrically connected to the power semiconductor element 100.

[0174] For example, as shown in Figure 13, one side of the circuit pattern on the third metal plate 423 may be electrically connected to the power semiconductor element 100 by a wire-like wiring 130a. The other side of the circuit pattern on the third metal plate 423 is connected to an external connection terminal. The external connection terminal may include an input power supply, a motor or inverter controller, etc.

[0175] The embodiment has a special technical effect: it allows for precise updating and management of etching information (etching solution, etching process conditions, etc.) for individual heat dissipation substrates after the hot pressing process.

[0176] If the etching process for forming the circuit pattern is not performed, it can be used as a heat dissipation component, and the process is the same as the heat dissipation substrate process after the etching process.

[0177] Next, we will explain the laser scribing process, inspection process, and cutting process for the heat sink substrate. For example, an etching inspection is performed on the heat sink substrate after the etching process is completed. For heat sink substrates that pass the etching inspection, a unique code UC is marked on the metal plate.

[0178] For example, if a heat dissipation substrate includes nine snap regions, unique information UC can be marked on each snap region of a metal plate that does not have a circuit pattern formed on it, such as a first metal plate 421. The marking of unique information UC on each snap region of the first metal plate 421 may be performed after laser scribing.

[0179] Next, a laser scribing process and a breaking process are performed. In this embodiment, an inspection process is performed after the laser scribing process and before the breaking process. The inspection process may include ultrasonic testing (SAT) to secondarily inspect for voids and cracks at the bonding interface using ultrasound.

[0180] Furthermore, in the inspection process following the laser scribing process, an automated visual inspection process is performed to analyze surface information such as surface roughness, surface pinhole inspection, protrusion inspection, and foreign matter inspection. The embodiment has a special technical effect in that it can precisely update and manage secondary bonding interface inspection information and automated visual inspection information for individual heat dissipation substrates after the etching process.

[0181] Subsequently, individual heat dissipation substrates 400 are manufactured from the final good product through a cutting and separation process, as shown in Figure 12. The heat dissipation substrate 400 in the embodiment shown in Figure 12 is delivered with a unique code UC marked on the bottom surface of the first metal plate 421. As a result, according to this embodiment, unique information that allows for confirmation of the history of all processes from the initial receiving stage of the product is perfectly matched to the final product and delivered to the customer. The customer can then accurately understand the quality and production history of the product using this unique information, and can make requests for after-sales service (A / S) quickly and accurately when necessary.

[0182] On the other hand, simply marking product information on the heat dissipation substrate of the final product does not allow for perfect matching and management of film deposition information such as the thickness information of the insulating substrate, the thickness information of the metal plate, and the bonding interface information that constitute the product.

[0183] <Power converter including heat dissipation substrate> Figure 13 is a first cross-sectional view of a power semiconductor module 501 including a heat dissipation substrate for a power semiconductor according to the first embodiment.

[0184] As mentioned above, individual heat dissipation boards 400 are manufactured as shown in Figure 12 by a snap-cut and separation process from the final good heat dissipation board on which the circuit pattern has been formed.

[0185] Next, referring to Figure 13, a working fluid inlet (not shown) is formed on one side of the second metal plate 422 of the heat dissipation substrate 400 of the power semiconductor module 501 according to the embodiment, and the working fluid (not shown) can be injected into the hollow structure HE to close the fluid inlet. The working fluid may be, but is not limited to, acetone, methanol, ethanol, or ultrapure water (DI-water).

[0186] In this embodiment, the heat generated from the power semiconductor element 100 is efficiently transferred to the second metal plate 422 of the heat dissipation substrate, causing the working fluid to vaporize, absorb latent heat of vaporization, move towards the first metal plate 421 below, and condense into a liquid while releasing latent heat of vaporization. The condensed working fluid is absorbed by the porous structure of the second metal plate 422 and moves towards the insulating substrate 410. In this embodiment, the power semiconductor element 100, which is the heat source, can be placed below the heat dissipation substrate 400, and the condensed working fluid can be moved using gravity.

[0187] Next, Figure 14 is a diagram showing the heat dissipation component 550 according to the embodiment arranged on a semiconductor element chip on a circuit board 610.

[0188] For example, posts 620 are arranged spaced apart on a predetermined circuit board 610, and a predetermined semiconductor element chip is placed inside the posts 620 on the circuit board 610. The semiconductor element chip may be a Si semiconductor element or a SiC semiconductor element, but is not limited to these. The posts 620 may be made of a material that has excellent heat transfer performance and is electrically insulating, but is not limited to these.

[0189] Referring to Figure 14, the heat dissipation component 550 according to the embodiment may be bonded to the semiconductor element chip by a predetermined adhesive member (not shown), but is not limited thereto. For example, the heat dissipation component 550 may be bonded to the semiconductor element chip by soldering, sintering bonding, transient liquid phase bonding (TLP bonding), ultrasonic bonding, etc.

[0190] The heat dissipation component 550 of the embodiment may include one or more metal plates and an insulating substrate 510. For example, the heat dissipation component 550 may include, but is not limited to, a first metal plate 521, a second metal plate 522, an insulating substrate 510, and a third metal plate 523.

[0191] The insulating substrate 510 can electrically insulate the second metal plate 522 and the third metal plate 523. The insulating substrate 510 may include a polycrystalline insulating substrate made of a ceramic material with high thermal conductivity. For example, the insulating substrate 510 may be made of AlN or Si3N4, but is not limited to these, and may also be made of Al2O3, etc. Hereinafter, the insulating substrate 510 will be described using a polycrystalline substrate made of a ceramic material as an example, but is not limited to this, and may also include single-crystal substrates such as sapphire substrates.

[0192] The first metal plate 521, the second metal plate 522, and the third metal plate 523 may contain, but are not limited to, a Cu-based metal. For example, the first, second, and third metal plates 521, 522, and 523 may contain one or more of Al, Ni, Ag, Mg, and Zn.

[0193] The second metal plate 522 has one side in contact with the insulating substrate 510 and the other side capable of dissipating heat.

[0194] In the embodiment, the second metal plate 522 may include one or more metal plates. For example, the second metal plate 522 may include a 2-1 metal plate 522a having a first through trench E1 and a second body B2. The second metal plate 522 may further include a 2-2 metal plate 522b having a first body B1 and a second through trench E2.

[0195] The second metal plate 522 is shown to include a second-first metal plate 522a and a second-second metal plate 522b, but is not limited to this, and may consist of a single metal plate.

[0196] The second metal plate 522 connects the first through trench E1 and the second through trench E2 in three dimensions to form a hollow structure HE, into which a working fluid (not shown), such as acetone, methanol, ethanol, or ultrapure water, is filled.

[0197] Furthermore, the first body B1 and the second body B2 of the second metal plate 522 may include a porous structure in which a working fluid can be contained or absorbed. For example, the first body B1 and the second body B2 of the second metal plate 522 may be formed in a sintering process to include a porous structure. Alternatively, the first body B1 and the second body B2 of the second metal plate 522 may have grooves in the form of fine grooves on their side walls. Alternatively, the first body B1 and the second body B2 of the second metal plate 522 may include a porous structure in the form of a mesh.

[0198] According to the embodiment, heat generated from the semiconductor element chip is efficiently transferred to the second metal plate 522 of the heat dissipation substrate, causing the working fluid to vaporize, absorb latent heat of vaporization, move towards the upper third metal plate 523, condense while releasing latent heat of vaporization, and condense into a liquid. The condensed working fluid is then absorbed by the porous structure of the second metal plate 522 and moves towards the first metal plate 521.

[0199] Next, the third metal plate 523 may be in the form of a heat sink. For example, the third metal plate 523 may, but is not limited to, include a plurality of heat dissipation pins (fins) formed by a patterning process such as etching.

[0200] Furthermore, in the embodiment, the third metal plate 523 may include a second hollow structure (not shown) corresponding to the hollow structure HE. For example, the third metal plate 523 may include a third-first metal plate (not shown) and a third-second metal plate (not shown) arranged sequentially from the insulating substrate 510.

[0201] Furthermore, the third metal plate 523 is provided with a third through trench (not shown) and a fourth through trench (not shown) located in the third-first metal plate (not shown) and the third-second metal plate (not shown), and the third through trench (not shown) and the fourth through trench (not shown) can be connected three-dimensionally to form a second hollow structure, into which a working fluid (not shown), such as acetone, methanol, ethanol, or ultrapure water, is filled.

[0202] The heat dissipation component 550 according to the embodiment is manufactured by a hot press process in a high-temperature and high-pressure vacuum environment, thereby integrally realizing a second metal plate 522 having a hollow structure HE that can enclose a working fluid within the heat dissipation component 550 itself.

[0203] Furthermore, according to the embodiment, the heat transfer path between the semiconductor element, which is the heat source, and the second metal plate 522 having a hollow structure HE is shortened, improving the heat transfer efficiency and enabling efficient vaporization of the working fluid, thereby resulting in a significant improvement in heat dissipation performance.

[0204] Furthermore, according to the embodiment, by integrally providing a second metal plate 522 having a hollow structure HE that can enclose the working fluid within the heat dissipation component 550 itself without the interposition of a separate adhesive layer, heat is transferred to the second metal plate 522 having the hollow structure HE without passing through an adhesive layer that could induce thermal resistance. As a result, the heat transfer efficiency is improved, the vaporization of the working fluid is performed efficiently, and the heat dissipation performance is significantly improved.

[0205] Furthermore, in the heat dissipation component 550 according to the embodiment, not only is the interface between the second metal plate 522 having a hollow structure HE and the first metal plate 521 which is integrally bonded to its underside without an adhesive layer substantially undivided, but the material of the second metal plate 522 having a hollow structure HE and the material of the first metal plate 521 integrally formed to its underside can be the same. As a result, the difference in thermal expansion coefficients between the first metal plate 521 and the second metal plate 522 is eliminated, fundamentally preventing separation at the bonding interface or warping of the components, and has the special technical effect of significantly improving the reliability of the heat dissipation component.

[0206] Next, Figure 15 is a circuit diagram illustrating a power converter 1000 to which the power semiconductor module according to the embodiment is applied.

[0207] In this embodiment, the power semiconductor device describes an automotive inverter for driving a motor, but the power semiconductor device in this embodiment can be applied to inverters, converters, and the like in the various technical fields mentioned above. Here, "automobile" includes hybrid electric vehicles (HEVs), plug-in hybrid electric vehicles (PHEVs), electric vehicles (EVs), fuel cell electric vehicles (PCEVs), and the like.

[0208] The power converter 1000 according to the embodiment can receive DC power from a battery or fuel cell and convert it to AC power, and can supply AC power to a predetermined load. For example, the power converter 1000 according to the embodiment may include an inverter, which can receive DC power from a battery, convert it to three-phase AC power, and supply it to a motor M, which can then provide power to an electric vehicle, a fuel cell vehicle, etc.

[0209] The power conversion device 1000 according to the embodiment may include a power semiconductor element 100. The power semiconductor element 100 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor), but is not limited to this, and may include an IGBT (Insulated Gate Bipolar Transistor).

[0210] For example, the power converter 1000 may include a plurality of power semiconductor elements 100a, 100b, 100c, 100d, 100e, and 100f, and may also include a plurality of diodes (not shown). Each of the plurality of diodes may be embedded in the power semiconductor elements 100a, 100b, 100c, 100d, 100e, and 100f in the form of an internal diode, but is not limited to this, and may be arranged separately.

[0211] The embodiment can convert a DC power supply to an AC power supply by on / off control of a plurality of power semiconductor elements 100a to 100f. For example, the power conversion device 1000 according to the embodiment can supply a positive polarity power supply to the motor M by turning on the first power semiconductor element 100a and turning off the second power semiconductor element 100b in the first time interval of one cycle, and supply a negative polarity power supply to the motor M by turning off the first power semiconductor element 100a and turning on the second power semiconductor element 100b in the second time interval of one cycle.

[0212] In the embodiment, a group of power semiconductor elements arranged in series on the input high-voltage line and low-voltage line can be referred to as an arm. For example, the first and second power semiconductor elements 100a and 100b can constitute the first arm 12a, the third and fourth power semiconductor elements 100c and 100d can constitute the second arm 12b, and the fifth and sixth power semiconductor elements 100e and 100f can constitute the third arm 12c.

[0213] The multiple power semiconductor elements 100a to 100f shown in Figure 15 are packaged as a single power semiconductor module, or the power semiconductor elements constituting each arm are packaged as a single power semiconductor module. In the arm, the upper power semiconductor element and the lower power semiconductor element are controlled so that they do not turn on simultaneously. For example, in the first arm, the first power semiconductor element 100a and the second power semiconductor element 100b can be turned on and off alternately without turning on simultaneously.

[0214] The power semiconductor element 100 in the embodiment may be a silicon carbide (SiC) power semiconductor element, which can operate in high-temperature, high-voltage environments and has high switching speed while having low switching loss.

[0215] Although the above has been described with reference to embodiments of the present invention, a person with ordinary skill in the art will readily understand that the present invention can be modified and altered in various ways without departing from the spirit and scope of the invention as described in the following claims.

Claims

1. Insulating substrate and An intermediate metal plate bonded to the bottom surface of the insulating substrate, A second metal plate bonded to the bottom surface of the aforementioned intermediate metal plate, The first metal plate is bonded to the bottom surface of the second metal plate, The second metal plate includes a hollow structure, The second metal plate is, A second-first metal plate bonded to the insulating substrate is provided with a plurality of first through trenches arranged in a first direction, A heat dissipation substrate for a power semiconductor module, comprising a second metal plate bonded to the bottom surface of the second-first metal plate, the second through trench being arranged in a second direction perpendicular to the first direction, and the second-second metal plate being bonded to the bottom surface of the second-first metal plate.

2. The heat dissipation substrate for a power semiconductor module according to claim 1, wherein the second metal plate has the hollow structure formed by the first through trench and the second through trench, which are in three-dimensional communication with each other.

3. The heat dissipation substrate for a power semiconductor module according to Claim 1, wherein the first metal plate, the second-1 metal plate, the second-2 metal plate, and the intermediate metal plate contain the same metal material.

4. The 2-1 metal plate includes a first body between a plurality of spaced-apart first through trenches, The heat dissipation substrate for a power semiconductor module according to claim 3, wherein the second-2 metal plate includes a second body between a plurality of spaced-apart second through trenches.

5. The present invention further includes a third metal plate bonded to the upper surface of the insulating substrate, The heat dissipation substrate for a power semiconductor module according to claim 1, wherein the thickness of the third metal plate is greater than the thickness of the first metal plate or the thickness of the second metal plate.

6. The third metal plate includes a circuit pattern on its surface, wherein the heat dissipation substrate for a power semiconductor module is as described in claim 5.

7. The heat dissipation substrate for a power semiconductor module according to claim 5, wherein the first metal plate, the second metal plate, the intermediate metal plate, and the third metal plate contain the same metal material.

8. The second metal plate is directly bonded to the bottom surface of the intermediate metal plate without an adhesive layer. The heat dissipation substrate for a power semiconductor module according to claim 1, wherein the first metal plate is directly bonded to the bottom surface of the second metal plate without an adhesive layer.

9. A heat dissipation substrate for a power semiconductor module according to any one of claims 1 to 8, A power semiconductor module comprising a power semiconductor element disposed on a heat dissipation substrate for the power semiconductor module.

10. A power conversion device including the power semiconductor module according to claim 9.

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