Semiconductor laser device

Abstract

This semiconductor laser device comprises a substrate that has a substrate surface, a semiconductor laser element that is provided on the substrate surface, and a translucent sealing resin that seals the semiconductor laser element. The sealing resin has a sealing surface that faces the same side as the substrate surface, and a first sealing end surface that intersects the sealing surface. The sealing resin includes a diffusion material that diffuses light. The semiconductor laser element includes a first light emitting surface that emits laser light toward the first sealing end surface.

Description

semiconductor laser device

[0001] The present disclosure relates to a semiconductor laser device.

[0002] 2. Description of the Related Art Conventionally, semiconductor light emitting devices equipped with light emitting diodes (LEDs) as light sources are known as light source devices mounted in various electronic devices (see, for example, Patent Document 1).

[0003] JP 2013-41866 A

[0004] However, since semiconductor light emitting devices use LED elements, it is difficult to accommodate higher output from the light source. Therefore, instead of LED elements, it is conceivable to accommodate higher output by using semiconductor laser elements such as vertical cavity surface emitting lasers (VCSELs).

[0005] However, laser light emitted from a semiconductor laser element has higher directivity than light emitted from an LED element. Therefore, semiconductor laser elements are generally suitable for applications requiring high directivity. Conversely, in fields where semiconductor light-emitting devices using LED elements as light sources are used, a wider beam angle is generally required. For this reason, semiconductor laser elements are generally not suitable for use in semiconductor light-emitting devices using LED elements as light sources. As such, it is difficult to achieve both high output and a wide beam angle in a light source.

[0006] A semiconductor laser device that solves the above problem includes a substrate having a substrate surface, a semiconductor laser element provided on the substrate surface, a sealing surface facing the same side as the substrate surface, and a first sealing end face intersecting the sealing surface, and comprises a light-transmitting sealing resin that seals the semiconductor laser element, wherein the sealing resin includes a diffusing material that diffuses light, and the semiconductor laser element includes a first light-emitting surface that emits laser light toward the first sealing end face.

[0007] According to the semiconductor laser device, it is possible to improve the output of emitted light and widen the beam angle at the same time.

[0008] FIG. 1 is a perspective view of a semiconductor laser device according to a first embodiment. FIG. 2 is a plan view of the semiconductor laser device of FIG. 1. FIG. 3 is a plan view of a substrate of the semiconductor laser device of FIG. 2. FIG. 4 is a back view of the substrate of FIG. 3. FIG. 5 is a cross-sectional view of the semiconductor laser device taken along line F5-F5 in FIG. 2. FIG. 6 is a cross-sectional view showing a first light-emitting surface of a semiconductor laser element and its periphery in the semiconductor laser device of FIG. 5. FIG. 7 is a plan view schematically showing an example of a manufacturing process for the semiconductor laser device according to the first embodiment. FIG. 8 is a plan view schematically showing an example of a manufacturing process for the semiconductor laser device subsequent to FIG. 7. FIG. 9 is a plan view schematically showing an example of a manufacturing process for the semiconductor laser device subsequent to FIG. 8. FIG. 10 is a cross-sectional view schematically showing the semiconductor laser device of FIG. 9. FIG. 11 is a plan view of a semiconductor laser device according to a comparative example. FIG. 12 is a cross-sectional view of a semiconductor laser device according to a comparative example. FIG. 13 is a plan view of a semiconductor laser device according to a second embodiment. FIG. 14 is a cross-sectional view of the semiconductor laser device taken along line F14-F14 in FIG. 13. FIG. 15 is a cross-sectional view showing a first light-emitting surface of a semiconductor laser element and its periphery in the semiconductor laser device of FIG. 14. FIG. 16 is a plan view of a semiconductor laser device of a third embodiment. FIG. 17 is a backside view of the substrate of the semiconductor laser device of FIG. 16. FIG. 18 is a cross-sectional view of the semiconductor laser device cut along line F18-F18 in FIG. 16. FIG. 19 is a cross-sectional view showing the semiconductor laser device of FIG. 18 mounted on a circuit board. FIG. 20 is a plan view of a semiconductor laser device of a fourth embodiment. FIG. 21 is a plan view of the substrate of the semiconductor laser device of FIG. 20. FIG. 22 is a backside view of the substrate of FIG. 21. FIG. 23 is a cross-sectional view of the semiconductor laser device cut along line F23-F23 in FIG. 20. FIG. 24 is a plan view of a semiconductor laser device of a fifth embodiment. FIG. 25 is a backside view of the substrate of the semiconductor laser device of FIG. 24. FIG. 26 is a cross-sectional view of the semiconductor laser device cut along line F26-F26 in FIG. 24. Fig. 27 is a plan view of a semiconductor laser device according to a sixth embodiment. Fig. 28 is a backside view of the substrate of the semiconductor laser device of Fig. 27. Fig. 29 is a cross-sectional view of the semiconductor laser device taken along line F29-F29 in Fig. 27. Fig. 30 is a plan view of a semiconductor laser device according to a seventh embodiment. Fig. 31 is a backside view of the substrate of the semiconductor laser device of Fig. 30.FIG. 32 is a cross-sectional view of the semiconductor laser device taken along line F32-F32 in FIG. 30. FIG. 33 is a circuit diagram of a laser system including the semiconductor laser device of FIG. 30. FIG. 34 is a plan view of the semiconductor laser device of the eighth embodiment. FIG. 35 is a cross-sectional view of the semiconductor laser device taken along line F35-F35 in FIG. 34. FIG. 36 is an enlarged view of the second light-emitting surface of the semiconductor laser element in the semiconductor laser device of FIG. 35 and its periphery. FIG. 37 is a plan view of the semiconductor laser device of the ninth embodiment. FIG. 38 is a cross-sectional view of the semiconductor laser device taken along line F38-F38 in FIG. 37. FIG. 39 is a plan view schematically showing an example of a manufacturing process for the semiconductor laser device of the ninth embodiment. FIG. 40 is a plan view schematically showing an example of a manufacturing process for the semiconductor laser device subsequent to FIG. 39. FIG. 41 is a plan view schematically showing an example of a manufacturing process for the semiconductor laser device subsequent to FIG. 40. FIG. 42 is a cross-sectional view schematically showing an example of a manufacturing process for the semiconductor laser device of FIG. 41. FIG. 43 is a plan view of a semiconductor laser device according to a tenth embodiment. FIG. 44 is a plan view of the semiconductor laser device of FIG. 43 with the semiconductor laser element and wires omitted. FIG. 45 is a cross-sectional view of the semiconductor laser device taken along line F45-F45 in FIG. 43. FIG. 46 is a plan view of a semiconductor laser device according to a modified example. FIG. 47 is a cross-sectional view of a semiconductor laser device according to a modified example. FIG. 48 is a cross-sectional view of a semiconductor laser device according to a modified example. FIG. 49 is a cross-sectional view of a semiconductor laser device according to a modified example. FIG. 50 is a plan view of a semiconductor laser device according to a modified example. FIG. 51 is a cross-sectional view of the semiconductor laser device taken along line F51-F51 in FIG. 50. FIG. 52 is a plan view of a semiconductor laser device according to a modified example. FIG. 53 is a plan view of a semiconductor laser device according to a modified example. FIG. 54 is a cross-sectional view of the semiconductor laser device taken along line F54-F54 in FIG. 53. FIG. 55 is a cross-sectional view of a semiconductor laser device according to a modified example. FIG. 56 is a plan view of a semiconductor laser device according to a modified example. Fig. 57 is a cross-sectional view of a semiconductor laser device of a modified example. Fig. 58 is a plan view of a semiconductor laser device of a modified example. Fig. 59 is a plan view of a semiconductor laser device of a modified example. Fig. 60 is a plan view of a semiconductor laser device of a modified example. Fig. 61 is a cross-sectional view of a semiconductor laser device of a modified example. Fig. 62 is a cross-sectional view of a semiconductor laser device of a modified example.Fig. 63 is a cross-sectional view of a semiconductor laser device according to a modified example. Fig. 64 is a plan view of a semiconductor laser device according to a modified example. Fig. 65 is a cross-sectional view of the semiconductor laser device taken along line F65-F65 in Fig. 64. Fig. 66 is a plan view schematically showing an example of a manufacturing process for the semiconductor laser device of Fig. 64. Fig. 67 is a plan view schematically showing an example of a manufacturing process for the semiconductor laser device subsequent to Fig. 66. Fig. 68 is a plan view of a semiconductor laser device according to a modified example. Fig. 69 is a cross-sectional view of the semiconductor laser device taken along line F69-F69 in Fig. 68. Fig. 70 is a plan view of a semiconductor laser device according to a modified example.

[0009] Hereinafter, several embodiments of semiconductor laser devices according to the present disclosure will be described with reference to the accompanying drawings. Note that for simplicity and clarity of description, components shown in the drawings are not necessarily drawn to scale. Also, hatching lines may be omitted in cross-sectional views to facilitate understanding. The accompanying drawings merely illustrate embodiments of the present disclosure and should not be considered to limit the present disclosure.

[0010] The following detailed description includes devices, systems, and methods embodying exemplary embodiments of the present disclosure. This detailed description is merely illustrative in nature and is not intended to limit the embodiments of the present disclosure or the application and uses of such embodiments.

[0011] First Embodiment A semiconductor laser device 10 according to a first embodiment will be described with reference to Figures 1 to 10. Figures 1 to 6 show a schematic configuration of the semiconductor laser device 10 according to the first embodiment, and Figures 7 to 10 show an example of a method for manufacturing the semiconductor laser device 10 according to the first embodiment.

[0012] The term "plan view" used in this disclosure refers to viewing the semiconductor laser device 10 in the Z-axis direction of the mutually orthogonal X, Y, and Z axes shown in Fig. 1. In addition, in the semiconductor laser device 10 shown in Fig. 1, the +Z direction is defined as the top and the -Z direction is defined as the bottom. Unless otherwise specified, "plan view" refers to viewing the semiconductor laser device 10 from above along the Z-axis.

[0013] [Overall Configuration of Semiconductor Laser Device] FIG. 1 shows a perspective view of a semiconductor laser device 10, and FIG. 2 shows a planar view of the semiconductor laser device 10. FIG. 3 shows a planar view of the semiconductor laser device 10, with a semiconductor laser element 40, a wire W, a sealing resin 50, and a sidewall 60 (described later) omitted from FIG. 2. FIG. 4 shows a rear surface structure of a substrate 20 (described later) of the semiconductor laser device 10. The sealing resin 50 is omitted from FIGS. 2 and 3 for ease of understanding the drawings. FIG. 5 shows a schematic cross-sectional view of the semiconductor laser device 10, and FIG. 6 shows a schematic cross-sectional view of a portion of the semiconductor laser device 10 for illustrating laser light emitted from the semiconductor laser device 10. Note that a diffusing material 57 (described later) is omitted from FIGS. 1 and 2 for ease of understanding the drawings.

[0014] 1 and 2, the semiconductor laser device 10 is formed in a rectangular plate shape with its thickness oriented in the Z-axis direction. The semiconductor laser device 10 includes a substrate 20 and a semiconductor laser element 40 disposed on the substrate 20.

[0015] The substrate 20 is a component that supports the semiconductor laser element 40. The substrate 20 is formed in a flat plate shape with the Z-axis direction as the thickness direction. In the following description, "planar view" is synonymous with "viewed from the thickness direction of the substrate."

[0016] In the first embodiment, in a plan view, the substrate 20 has a rectangular shape with the X-axis direction as its short side and the Y-axis direction as its long side. The substrate 20 has a substrate front surface 21, a substrate back surface 22 opposite the substrate front surface 21, and first to fourth substrate side surfaces 23 to 26 (see FIG. 2 ) connecting the substrate front surface 21 and the substrate back surface 22. As shown in FIG. 2 , the first substrate side surface 23 and the second substrate side surface 24 constitute both end surfaces of the substrate 20 in the Y-axis direction, and the third substrate side surface 25 and the fourth substrate side surface 26 constitute both end surfaces of the substrate 20 in the X-axis direction. In the first embodiment, the first substrate side surface 23 and the second substrate side surface 24 each extend in the X-axis direction in a plan view. The third substrate side surface 25 and the fourth substrate side surface 26 each extend in the Y-axis direction in a plan view. The first substrate side surface 23 constitutes the end surface in the +Y direction of both end surfaces of the substrate 20 in the Y-axis direction, and the second substrate side surface 24 constitutes the end surface in the −Y direction. The third substrate side surface 25 constitutes the end surface in the +X direction of both end surfaces of the substrate 20 in the X-axis direction, and the fourth substrate side surface 26 constitutes the end surface in the −X direction.

[0017] In the first embodiment, the substrate 20 is made of glass epoxy resin. However, the substrate 20 may be made of a material containing ceramic. Examples of the material containing ceramic include aluminum nitride (AlN) and alumina (Al ２ O ３ When the substrate 20 is made of a material containing ceramic, the heat dissipation performance of the substrate 20 is improved, and therefore the temperature of the semiconductor laser element 40 can be prevented from becoming excessively high.

[0018] As shown in Figures 3 to 5, the semiconductor laser device 10 comprises a first wiring 31 and a second wiring 32 provided on the substrate surface 21, a first electrode 33 and a second electrode 34 provided on the substrate back surface 22, a first via 35 electrically connecting the first wiring 31 and the first electrode 33, and a second via 36 electrically connecting the second wiring 32 and the second electrode 34.

[0019] In the first embodiment, both the first wiring 31 and the second wiring 32 are formed on the substrate surface 21. The first wiring 31 and the second wiring 32 are arranged apart from each other in the longitudinal direction of the substrate 20, i.e., the Y-axis direction, in a plan view. Each of the first wiring 31 and the second wiring 32 is formed from a material containing copper, for example. Note that the material constituting each of the first wiring 31 and the second wiring 32 can be changed as desired within the range of conductive materials.

[0020] As shown in FIG. 3 , the first wiring 31 is disposed closer to the first substrate side surface 23 than the second wiring 32. In a plan view, the first wiring 31 can also be said to be disposed between the first substrate side surface 23 and the second wiring 32 in the Y-axis direction. In a plan view, the second wiring 32 can also be said to be disposed between the first wiring 31 and the second substrate side surface 24 in the Y-axis direction. In a plan view, the first wiring 31 has a rectangular shape with the X-axis direction as its short side and the Y-axis direction as its long side. In other words, the long side of the first wiring 31 coincides with the long side of the substrate 20, and the short side of the first wiring 31 coincides with the short side of the substrate 20. In a plan view, the second wiring 32 has a rectangular shape with the X-axis direction as its long side and the Y-axis direction as its short side. In other words, the short side of the second wiring 32 coincides with the long side of the substrate 20, and the long side of the second wiring 32 coincides with the short side of the substrate 20. The short-side direction of the second wiring 32 can also be said to be the arrangement direction of the first wiring 31 and the second wiring 32. In the first embodiment, the length of the first wiring 31 in the X-axis direction and the length of the second wiring 32 in the X-axis direction are equal to each other. The length of the first wiring 31 in the Y-axis direction is longer than the length of the second wiring 32 in the Y-axis direction.

[0021] 4, the first electrode 33 and the second electrode 34 are configured as external electrodes when the semiconductor laser device 10 is mounted on a circuit board (not shown). In the first embodiment, both the first electrode 33 and the second electrode 34 are formed on the rear surface 22 of the substrate. The first electrode 33 and the second electrode 34 are arranged spaced apart from each other in the longitudinal direction of the substrate 20, i.e., the Y-axis direction, in a plan view. Each of the first electrode 33 and the second electrode 34 is formed of a material containing copper, for example. Note that the material of each of the first electrode 33 and the second electrode 34 can be changed as desired within the range of conductive materials.

[0022] The first electrode 33 is disposed closer to the first substrate side surface 23 than the second electrode 34. In plan view, the first electrode 33 can also be said to be disposed between the first substrate side surface 23 and the second electrode 34 in the Y-axis direction. In plan view, the second electrode 34 can also be said to be disposed between the first electrode 33 and the second substrate side surface 24 in the Y-axis direction. As shown in FIG. 5 , in plan view, the first electrode 33 is disposed at a position overlapping with the first wiring 31. In plan view, the second electrode 34 is disposed at a position overlapping with the second wiring 32.

[0023] As shown in FIG. 4 , the first electrode 33 has a rectangular shape with its short side oriented in the X-axis direction and its long side oriented in the Y-axis direction in a plan view. The second electrode 34 has a rectangular shape with its long side oriented in the X-axis direction and its short side oriented in the Y-axis direction in a plan view. In the first embodiment, the length of the first electrode 33 in the X-axis direction and the length of the second electrode 34 in the X-axis direction are equal to each other. The length of the first electrode 33 in the Y-axis direction is longer than the length of the second electrode 34 in the Y-axis direction. In the first embodiment, the area of ​​the first electrode 33 is larger than the area of ​​the first substrate side surface 23. The area of ​​the second electrode 34 is larger than the area of ​​the second wiring 32.

[0024] 3 to 5, the distance between the first electrode 33 and the second electrode 34 in the Y-axis direction is greater than the distance between the first wiring 31 and the second wiring 32 in the Y-axis direction. Note that the distance between the first electrode 33 and the second electrode 34 in the Y-axis direction can be changed as desired. In one example, the distance between the first electrode 33 and the second electrode 34 in the Y-axis direction may be equal to the distance between the first wiring 31 and the second wiring 32 in the Y-axis direction.

[0025] 3 to 5, a plurality of first vias 35 are provided. Each first via 35 is disposed at a position overlapping both the first wiring 31 and the first electrode 33 in a plan view. The plurality of first vias 35 are arranged at a distance from each other in both the X-axis direction and the Y-axis direction. Each first via 35 penetrates the substrate 20 in the Z-axis direction. Each first via 35 is in contact with both the first wiring 31 and the first electrode 33.

[0026] A plurality of second vias 36 are provided. Each second via 36 is arranged at a position overlapping both the second wiring 32 and the second electrode 34 in a plan view. The plurality of second vias 36 are arranged in a line spaced apart from each other in the X-axis direction. Each second via 36 penetrates the substrate 20 in the Z-axis direction. Each second via 36 is in contact with both the second wiring 32 and the second electrode 34.

[0027] The number and arrangement of each of the first vias 35 and the second vias 36 can be changed as desired. In one example, the multiple first vias 35 may be arranged in an area different from an area overlapping with the semiconductor laser element 40 in a plan view. In this case, the number of first vias 35 may be, for example, 13 or more. In another example, the number of second vias 36 may be four or more.

[0028] As shown in FIGS. 1 and 2 , the semiconductor laser element 40 is provided on the substrate surface 21. In one example, the semiconductor laser element 40 is mounted on the first wiring 31. In the first embodiment, the semiconductor laser element 40 is mounted on the first wiring 31. More specifically, as shown in FIG. 5 , the semiconductor laser element 40 is bonded to the first wiring 31 with a conductive bonding material SD such as solder paste or silver paste. Therefore, the semiconductor laser element 40 is located closer to the first substrate side surface 23 (first sealing end surface 53) than the second wiring 32. In other words, the second wiring 32 is located closer to the second substrate side surface 24 (second sealing end surface 54) than the semiconductor laser element 40. It can also be said that the second wiring 32 is located closer to the second sealing end surface 54 with respect to a second light-emitting surface LS2 (described later) of the semiconductor laser element 40.

[0029] The semiconductor laser element 40 is a laser diode that emits light in a predetermined wavelength band, and functions as a light source for the semiconductor laser device 10. The semiconductor laser element 40 is an edge-emitting laser element. There are no particular limitations on the configuration of the semiconductor laser element 40 as an edge-emitting laser element, but in the first embodiment, a Fabry-Perot laser diode element is adopted.

[0030] The semiconductor laser element 40 is formed in a flat plate shape with its thickness direction aligned in the Z-axis direction. In plan view, the semiconductor laser element 40 has a rectangular shape with its longitudinal and lateral directions. In the first embodiment, the semiconductor laser element 40 is disposed so that its longitudinal direction is aligned with the Y-axis direction and its lateral direction is aligned with the X-axis direction.

[0031] As shown in Figures 2 and 5, the semiconductor laser element 40 has an element front surface 41, an element back surface 42 facing the opposite side to the element front surface 41, and first to fourth element side surfaces 43 to 46 connecting the element front surface 41 and the element back surface 42.

[0032] The element front surface 41 faces the same side as the substrate front surface 21 of the substrate 20, and the element back surface 42 faces the substrate front surface 21. The first element side surface 43 and the second element side surface 44 constitute both longitudinal end faces of the semiconductor laser element 40, and the third element side surface 45 and the fourth element side surface 46 constitute both lateral end faces of the semiconductor laser element 40. In the first embodiment, the first element side surface 43 and the second element side surface 44 constitute both Y-axis end faces of the semiconductor laser element 40, and the third element side surface 45 and the fourth element side surface 46 constitute both X-axis end faces of the semiconductor laser element 40. In the first embodiment, the first element side surface 43 constitutes the +Y-direction end face of the Y-axis direction end faces of the semiconductor laser element 40 and faces the same side as the first substrate side surface 23. The second element side surface 44 constitutes the −Y-direction end face of the Y-axis direction end faces of the semiconductor laser element 40 and faces the same side as the second substrate side surface 24. The third element side surface 45 constitutes the end surface in the +X direction of both end surfaces of the semiconductor laser element 40 in the X axis direction, and faces the same side as the third substrate side surface 25. The fourth element side surface 46 constitutes the end surface in the −X direction of both end surfaces of the semiconductor laser element 40 in the X axis direction, and faces the same side as the fourth substrate side surface 26.

[0033] Here, in the first embodiment, the first element side surface 43 constitutes a first light-emitting surface LS1 that emits laser light. Since the first element side surface 43 faces a direction intersecting the thickness direction of the substrate 20 (in the first embodiment, a direction perpendicular to the thickness direction of the substrate 20), it can be said that the first light-emitting surface LS1 faces a direction intersecting (orthogonal to) the thickness direction of the substrate 20. The first element side surface 43 (first light-emitting surface LS1) faces the same side as the first substrate side surface 23. Therefore, the semiconductor laser element 40 emits laser light that is mainly directed in the +Y direction.

[0034] The second element side surface 44 constitutes a second light-emitting surface LS2 that emits laser light. Since the second element side surface 44 faces a direction intersecting the thickness direction of the substrate 20 (a direction perpendicular to the thickness direction of the substrate 20 in the first embodiment), it can be said that the second light-emitting surface LS2 faces a direction intersecting (orthogonal to) the thickness direction of the substrate 20. The second element side surface 44 (first light-emitting side surface LS2) faces the same side as the second substrate side surface 24. In other words, the second light-emitting surface LS2 faces the opposite direction from the first light-emitting surface LS1. Therefore, the semiconductor laser element 40 emits laser light that is mainly directed in the -Y direction.

[0035] The output of the laser light emitted from the first light-emitting surface LS1 and the output of the laser light emitted from the second light-emitting surface LS2 may be different from each other. In the first embodiment, the ratio of the output of the laser light emitted from the first light-emitting surface LS1 to the output of the laser light emitted from the second light-emitting surface LS2 is, for example, 9:1. The output of the laser light is adjusted, for example, by adjusting the reflectance of the reflective films formed on the first light-emitting surface LS1 and the second light-emitting surface LS2. In the first embodiment, the reflectance of the reflective film formed on the first light-emitting surface LS1 is set to be lower than the reflectance of the reflective film formed on the second light-emitting surface LS2.

[0036] 5 , the semiconductor laser element 40 has an anode electrode 47 formed on the element front surface 41 and a cathode electrode 48 formed on the element back surface 42. The cathode electrode 48 is in contact with the conductive bonding material SD. That is, the cathode electrode 48 is electrically connected to the first wiring 31 by the conductive bonding material SD. Therefore, the cathode electrode 48 is electrically connected to the first electrode 33 via the first wiring 31 and the plurality of first vias 35.

[0037] The semiconductor laser device 10 includes a wire W that electrically connects the anode electrode 47 and the second wiring 32. As shown in FIG. 2 , the wire W extends along the Y-axis direction in a plan view. The wire W is made of, for example, gold (Au), silver (Ag), aluminum (Al), or Cu. The anode electrode 47 is electrically connected to the second electrode 34 via the second wiring 32 and a plurality of second vias 36.

[0038] The wire W is a bonding wire formed by a wire bonding device. In the first embodiment, the bonded portion of the wire W with the second wiring 32 is the first bonded portion, and the bonded portion of the wire W with the anode electrode 47 is the second bonded portion. This allows the height (maximum height) of the wire W to be lower than in a configuration in which the bonded portion of the wire W with the anode electrode 47 is the first bonded portion, and the bonded portion of the wire W with the second wiring 32 is the second bonded portion.

[0039] As shown in FIGS. 1, 2, and 5, the semiconductor laser device 10 of the first embodiment further includes a light-transmitting sealing resin 50 that seals the semiconductor laser element 40, and a sidewall 60 that surrounds the sealing resin 50.

[0040] The sealing resin 50 seals the first wiring 31, the second wiring 32, the semiconductor laser element 40, and the wire W while in contact with the substrate surface 21. The sealing resin 50 is provided on the substrate 20. The sealing resin 50 serves to refract and transmit the laser light emitted from the semiconductor laser element 40. The sealing resin 50 is made of a material containing at least one of a silicone resin, an epoxy resin, and an acrylic resin. In one example, the sealing resin 50 is made of a silicone resin.

[0041] The sealing resin 50 has a sealing surface 51 facing the same side as the substrate surface 21, and first to fourth sealing end faces 53 to 56 intersecting with the sealing surface 51. In the first embodiment, the sealing surface 51 is a flat surface perpendicular to the thickness direction (Z-axis direction) of the substrate 20. In a plan view, the area of ​​the sealing surface 51 is smaller than the area of ​​the substrate surface 21.

[0042] 2, in the first embodiment, the first to fourth sealing end faces 53 to 56 are sealing end faces that are perpendicular to the sealing surface 51. The first sealing end face 53 and the second sealing end face 54 constitute both end faces of the sealing resin 50 in the Y-axis direction. Each of the first sealing end face 53 and the second sealing end face 54 extends along the X-axis direction in a plan view. The third sealing end face 55 and the fourth sealing end face 56 constitute both end faces of the sealing resin 50 in the X-axis direction. Each of the third sealing end face 55 and the fourth sealing end face 56 extends along the Y-axis direction in a plan view.

[0043] The first sealing end face 53 faces the same side as the first substrate side face 23, and the second sealing end face 54 faces the same side as the second substrate side face 24. In other words, the second sealing end face 54 is the end face opposite to the first sealing end face 53. In the first embodiment, the first sealing end face 53 is formed to be flush with the first substrate side face 23. The first sealing end face 53 is disposed at a distance from the first light-emitting surface LS1 of the semiconductor laser element 40 in the +Y direction. The second sealing end face 54 is disposed closer to the first substrate side face 23 than the second substrate side face 24. It can also be said that the second sealing end face 54 is located between the semiconductor laser element 40 and the second substrate side face 24 in the Y-axis direction. The second sealing end face 54 is disposed at a distance from the second light-emitting surface LS2 of the semiconductor laser element 40 in the -Y direction.

[0044] The first sealed end face 53 faces the same side as the first element side face 43 of the semiconductor laser element 40. In other words, the first sealed end face 53 faces the same side as the first light-emitting surface LS1. Therefore, it can be said that the semiconductor laser element 40 includes a first light-emitting surface LS1 that emits laser light toward the first sealed end face 53. The second sealed end face 54 faces the same side as the second element side face 44 of the semiconductor laser element 40. In other words, the second sealed end face 54 faces the same side as the second light-emitting surface LS2. Therefore, it can be said that the semiconductor laser element 40 includes a second light-emitting surface LS2 that emits laser light toward the second sealed end face 54.

[0045] In the first embodiment, the first sealing end face 53 is a diced surface. In this case, cutting marks due to the dicing process are formed on the first sealing end face 53. In one example, the first sealing end face 53 may be rougher than the sealing surface 51. Therefore, the arithmetic mean roughness (Ra) of the first sealing end face 53 may be larger than the arithmetic mean roughness (Ra) of the sealing surface 51. As a result, the laser light emitted from the first light-emitting surface LS1 is scattered as it passes through the first sealing end face 53, and the beam angle of the laser light emitted from the semiconductor laser device 10 can be widened.

[0046] The third sealing end face 55 faces the same side as the third substrate side face 25, and the fourth sealing end face 56 faces the same side as the fourth substrate side face 26. In the first embodiment, the third sealing end face 55 is located closer to the fourth substrate side face 26 than the third substrate side face 25. It can also be said that the third sealing end face 55 is located between the semiconductor laser element 40 and the third substrate side face 25 in the X-axis direction. The fourth sealing end face 56 is located closer to the third substrate side face 25 than the fourth substrate side face 26. It can also be said that the fourth sealing end face 56 is located between the semiconductor laser element 40 and the fourth substrate side face 26 in the X-axis direction.

[0047] 5 , the sealing resin 50 includes a diffusing material 57 that diffuses light. More specifically, the diffusing material 57 diffuses light inside the sealing resin 50 by reflecting (scattering) the light at the interface between the resin in the sealing resin 50 and the diffusing material 57. As a result, the diffusing material 57 diffuses the laser light emitted from the semiconductor laser element 40 inside the sealing resin 50, thereby serving to widen the beam angle of the laser light emitted from the sealing resin 50.

[0048] The material of the diffusing material 57 is not particularly limited, but for example, silica or other glass materials can be used. In the first embodiment, spherical silica filler is used as the diffusing material 57. The particle size of the diffusing material 57 is not particularly limited, but for example, a particle size that is sufficiently small relative to the wavelength of the laser light emitted from the semiconductor laser element 40 is selected so that scattering occurs predominantly.

[0049] The compounding ratio of the diffusing material 57 to the resin of the sealing resin 50 is not particularly limited, and may be any ratio greater than 0% and less than 100%. The greater the compounding ratio of the diffusing material 57, the wider the beam angle of the laser light emitted from the semiconductor laser device 10. Furthermore, by limiting the upper limit of the compounding ratio of the diffusing material 57 to a predetermined value, a significant decrease in the laser light output and radiation intensity of the semiconductor laser device 10 can be suppressed. For example, in the first embodiment, the compounding ratio of the diffusing material 57 is preferably selected in the range greater than 0% and not more than 60%, and more preferably selected in the range of 20% to 60%.

[0050] In the first embodiment, a material having a smaller thermal expansion coefficient than the resin of the sealing resin 50 is selected as the diffusion material 57. In this configuration, the diffusion material 57 can reduce the thermal stress generated in the sealing resin 50 compared to when the sealing resin 50 is made of resin only. This can prevent the wires W from breaking due to the thermal stress of the sealing resin 50.

[0051] The diffusing material 57 is dispersed as fine particles in the sealing resin 50. The diffusing material 57 is mixed with the sealing resin 50 at a predetermined compounding ratio. In the first embodiment, the diffusing material 57 is mixed with the sealing resin 50 so that the laser light from the semiconductor laser element 40 is scattered at a position different from the peak position of the laser light output from the semiconductor laser element 40. In one example, the diffusing material 57 is uniformly dispersed in the sealing resin 50.

[0052] The sidewall 60 is provided on the substrate 20. The sidewall 60 is formed, for example, from a light-blocking material. An example of the light-blocking material is black epoxy resin. Heat-resistant engineering plastic can be used as the material for the sidewall 60. As shown in FIG. 2, the sidewall 60 is disposed on the outer periphery of the substrate 20. The material for the sidewall 60 can be changed as desired. In one example, a light-transmitting material may be used for the sidewall 60. In another example, the sidewall 60 may be formed from a metal material, ceramic, or the like instead of a resin material.

[0053] The side wall 60 has a pair of first side wall portions 61 spaced apart from each other and a second side wall portion 62 connecting the pair of first side wall portions 61. In the first embodiment, the pair of first side wall portions 61 and the pair of second side wall portions 62 are integrally formed. In one example, the side wall 60 is formed by resin molding.

[0054] The pair of first sidewalls 61 are arranged spaced apart from each other in the X-axis direction. In a plan view, each first sidewall 61 extends in the Y-axis direction, i.e., the longitudinal direction of the substrate 20. In a plan view, the second sidewall 62 extends in the X-axis direction, i.e., the lateral direction of the substrate 20. The second sidewall 62 is disposed closer to the second substrate side surface 24 of the substrate 20 than the semiconductor laser element 40.

[0055] The pair of first side wall portions 61 are arranged on both sides of the sealing resin 50 in the X-axis direction. One of the pair of first side wall portions 61 is in contact with the third sealing end face 55 of the sealing resin 50, and the other is in contact with the fourth sealing end face 56 of the sealing resin 50. The second side wall portion 62 covers the second sealing end face 54 of the sealing resin 50. The second side wall portion 62 is in contact with the second sealing end face 54. As such, the side wall 60 surrounds the sealing resin 50 and has an opening that exposes the first sealing end face 53. Therefore, it can also be said that the side wall 60 surrounds the semiconductor laser element 40 and has an opening that exposes the first light-emitting surface LS1 of the semiconductor laser element 40.

[0056] 2 , in plan view, the area of ​​the first wiring 31 is larger than the area of ​​the semiconductor laser element 40. More specifically, the length of the first wiring 31 in the X-axis direction is longer than the length of the semiconductor laser element 40 in the X-axis direction, and the length of the first wiring 31 in the Y-axis direction is longer than the length of the semiconductor laser element 40 in the Y-axis direction.

[0057] The semiconductor laser element 40 is disposed in a portion of the first wiring 31 closer to the second wiring 32 (second substrate side surface 24). More specifically, the center of the semiconductor laser element 40 in the Y-axis direction is located closer to the second wiring 32 (second substrate side surface 24) than the center of the first wiring 31 in the Y-axis direction.

[0058] The first wiring 31 includes a first end face 31A and a second end face 31B that constitute both ends of the first wiring 31 in the Y-axis direction. The first end face 31A is the end face of both ends of the first wiring 31 that is closer to the first substrate side face 23, and the second end face 31B is the end face of both ends of the first wiring 31 that is closer to the second substrate side face 24. In the first embodiment, the first end face 31A is located more inward than the first substrate side face 23 (closer to the second substrate side face 24). In a plan view, the first end face 31A is located closer to the first substrate side face 23 than the center in the Y-axis direction between the first substrate side face 23 and the first element side face 43 (first light-emitting surface LS1) of the semiconductor laser element 40.

[0059] In a plan view, the length of the first wiring 31 in the Y-axis direction is longer than the length of the semiconductor laser element 40 in the Y-axis direction. Therefore, the first wiring 31 includes a first extension portion 31C that is a portion between the first light-emitting surface LS1 and the first end face 31A of the semiconductor laser element 40, and a second extension portion 31D that is a portion between the second light-emitting surface LS2 and the second end face 31B. In this way, it can be said that the first wiring 31 has the first extension portion 31C that is a portion that extends from the first element side surface 43 (first light-emitting surface LS1) of the semiconductor laser element 40 toward the first sealed end face 53. The first extension portion 31C includes the first end face 31A. The second extension portion 31D includes the second end face 31B.

[0060] A distance D1 between the first element side surface 43 (first light-emitting surface LS1) of the semiconductor laser element 40 and the first end face 31A of the first wiring 31 in the Y-axis direction is larger than a distance D2 between the second element side surface 44 of the semiconductor laser element 40 and the second end face 31B of the first wiring 31 in the Y-axis direction. Here, the distance D1 can also be said to be the length of the first extension portion 31C in the Y-axis direction, and the distance D2 can also be said to be the length of the second extension portion 31D in the Y-axis direction.

[0061] The laser light emitted by the semiconductor laser element 40 has higher directivity than that of a light-emitting diode (LED). The laser light from the semiconductor laser element 40 configured as a Fabry-Perot laser diode element as in the first embodiment is emitted in the +Y direction, which is substantially perpendicular to the thickness direction (Z-axis direction) of the substrate 20.

[0062] As shown in FIG. 6 , the laser light from the semiconductor laser element 40 is diffused (scattered) by the diffusing material 57. As a result, the laser light includes laser light directed toward the substrate surface 21. The first extension 31C reflects a portion of the laser light directed toward the substrate surface 21. The reflected laser light passes through the first sealing end face 53 or the sealing surface 51 and is emitted to the outside of the semiconductor laser device 10. In this manner, it can be said that the semiconductor laser device 10 includes a first reflecting portion 70 that reflects a portion of the laser light that is emitted from the first light-emitting surface LS1 of the semiconductor laser element 40 and directed toward the substrate surface 21. In the first embodiment, the first extension 31C of the first wiring 31 constitutes the first reflecting portion 70. In other words, it can be said that the first wiring 31 has a portion that extends from the first light-emitting surface LS1 toward the first sealing end face 53 as the first reflecting portion 70.

[0063] The position of the first end face 31A in the Y-axis direction can be changed as desired. In one example, the first end face 31A may be disposed in a position flush with the first substrate side surface 23 in a plan view. The position of the first end face 31A in the Y-axis direction may be any position as long as the first extension portion 31C has a length that allows it to reflect at least a portion of the laser light directed toward the substrate surface 21.

[0064] 7 to 10, an example of a method for manufacturing the semiconductor laser device 10 will be described. For convenience, a configuration in which four semiconductor laser devices 10 can be manufactured at once is shown in Fig. 7 to 10, but the present invention is not limited to this, and a configuration in which more semiconductor laser devices 10 can be manufactured at once may also be used.

[0065] The manufacturing method of the semiconductor laser device 10 includes the steps of preparing a substrate 820, forming a sidewall 860 on the substrate 820, mounting a semiconductor laser element 40 on the first wiring 31, forming a wire W, forming a sealing resin 850, and singulating.

[0066] As shown in FIG. 7 , in the process of preparing a substrate 820, a substrate 820 is prepared on which first wiring 31, second wiring 32, first electrode 33, second electrode 34 (see FIG. 10 for the first electrode 33 and the second electrode 34), first via 35, and second via 36 are formed. The substrate 820 is made of, for example, glass epoxy resin. Alternatively, the substrate 820 may be made of, for example, ceramic. The substrate 820 is formed to a size that includes, for example, a plurality of substrates 20, and has the first wiring 31, second wiring 32, first electrode 33, second electrode 34, first via 35, and second via 36 formed thereon in a number corresponding to the number of substrates 20. Both the first wiring 31 and the second wiring 32 are provided on a substrate surface 821 of the substrate 820. Both the first electrode 33 and the second electrode 34 are provided on a substrate back surface 822 of the substrate 820 (see FIG. 10 ).

[0067] 8 , in the step of forming the sidewall 860 on the substrate 820, the sidewall 860 is formed on the substrate 820 by, for example, resin molding. Examples of resin molding include transfer molding and compression molding. By such resin molding, the sidewall 860 is integrated with the substrate 820.

[0068] The side wall 860 is a component that constitutes the side wall 60, and is formed as a plurality of unit side walls that surround the first wiring 31 and the second wiring 32 in a plan view. The number of the unit side walls is set, for example, according to the number of first wirings 31 on the substrate 820.

[0069] In the step of forming the sidewall 860 on the substrate 820, the sidewall 860, which is a molded product formed in advance by resin molding such as injection molding, may be attached to the substrate 820 by, for example, an adhesive. This results in the sidewall 860 and the substrate 820 being integrated together. Furthermore, the material of the sidewall 860 is not limited to resin, and it may also be made of metal or ceramic. Even in this case, the pre-formed sidewall 860 may be joined to the substrate 820 by an adhesive or metal bonding.

[0070] 9, in the first embodiment, the step of mounting the semiconductor laser element 40 on the first wiring 31 is a step of mounting the semiconductor laser element 40 on the first wiring 31. In this step, for example, the semiconductor laser element 40 is die-bonded onto the first wiring 31. As a result, the cathode electrode 48 (see FIG. 10) of the semiconductor laser element 40 and the first wiring 31 are electrically connected.

[0071] Subsequently, in the step of forming the wire W, the wire W is formed to electrically connect the anode electrode 47 of the semiconductor laser element 40 and the second wiring 32. The wire W is a bonding wire formed by a wire bonding apparatus. Here, in the first embodiment, the side of the wire W that is connected to the second wiring 32 is the first bonding, and the side of the wire W that is connected to the anode electrode 47 of the semiconductor laser element 40 is the second bonding.

[0072] 10 , in the step of forming the sealing resin 850, the sealing resin 850 is formed by, for example, resin molding in a space surrounded by the substrate 820 and unit side walls of the side walls 860. It can be said that the side walls 860 (unit side walls) surround the sealing resin 850.

[0073] The sealing resin 850 seals the first wiring 31, the second wiring 32, the semiconductor laser element 40, and the wire W. The sealing resin 850 is made of a light-transmitting material. In one example, the sealing resin 850 is made of a material including at least one of a silicone resin, an epoxy resin, and an acrylic resin. Here, the sealing resin 850 is formed by, for example, transfer molding or compression molding. The sealing resin 850 may be filled into the space surrounded by the substrate 820 and the unit sidewalls of the sidewall 860 by potting. The sealing resin 850 includes a diffusion material 57 (see FIG. 10 ).

[0074] Next, in the singulation process, both the sidewall 860 and the substrate 820 are cut with a dicing blade along the cutting lines CL in FIG. 9 . This forms the substrate 20, the sidewall 60, and the sealing resin 50. The semiconductor laser element 40 is mounted on the first wiring 31 so that the first light-emitting surface LS1 that emits laser light emits laser light toward the first sealing end surface 53 of the sealing resin 50. In other words, the semiconductor laser element 40 is mounted on the first wiring 31 so that the first light-emitting surface LS1 faces the same side as the first sealing end surface 53. Through the above processes, the semiconductor laser device 10 is manufactured.

[0075] The order of the manufacturing steps of the semiconductor laser device 10 can be changed as desired. In one example, a step of forming the sidewalls 860 on the substrate 820 may be performed after the step of mounting the semiconductor laser element 40 on the first wiring 31 and the step of forming the wires W, and before the step of forming the sealing resin 850. In this case, in the step of forming the sidewalls 860 on the substrate 820, the sidewalls 860, which are molded products formed in advance by resin molding such as injection molding, may be attached to the substrate 820 by, for example, an adhesive. Thereafter, the step of forming the sealing resin 850 and the step of singulating are performed in order.

[0076] [Function] The function of the semiconductor laser device 10 of the first embodiment will be described. Fig. 11 shows the planar structure of a semiconductor light emitting device 10X of a comparative example. Fig. 12 shows a schematic cross-sectional structure of the semiconductor light emitting device 10X of the comparative example when the semiconductor light emitting device 10X is arranged as a side light emitting type.

[0077] 11 , the semiconductor light emitting device 10X of the comparative example includes a flat substrate 20X, a first conductor 30XA and a second conductor 30XB provided on the substrate 20X, an LED element 40X, a plurality of wires W, a sealing resin 50X that seals the LED element 40X and the wires W, and a sidewall 60X that surrounds the sealing resin 50X in a planar view. Unlike the sealing resin 50, the sealing resin 50X does not include a diffusing material 57 (see FIG. 5 ).

[0078] 12, the first conductor 30XA includes a first wiring 31X formed on the substrate front surface 21X of the substrate 20X, a first electrode 33X formed on the substrate rear surface 22X, and a first side electrode 37X formed on the first substrate side surface 23X. The first side electrode 37X connects the first wiring 31X and the first electrode 33X.

[0079] The second conductor 30XB includes a second wiring 32X formed on the substrate front surface 21X of the substrate 20X, a second electrode 34X formed on the substrate rear surface 22X, and a second side surface electrode 38X formed on the second substrate side surface 24X. The second side surface electrode 38X connects the second wiring 32X and the second electrode 34X.

[0080] The LED element 40X is mounted on the first wiring 31X. The element surface 41X of the LED element 40X serves as the light-emitting surface LSX. Therefore, the LED element 40X emits light in the +Z direction in FIG. 12. The LED element 40X is electrically connected to the second wiring 32X by a plurality of wires W.

[0081] 12, when the semiconductor light emitting device 10X of the comparative example is used as a side-emitting type, the first side electrode 37X is connected to a circuit board (not shown). That is, the semiconductor light emitting device 10X of the comparative example is mounted on a circuit board with the first substrate side surface 23 facing the circuit board. As a result, heat from the semiconductor light emitting device 10X of the comparative example is transferred to the circuit board mainly via the first side electrode 37X. Therefore, the semiconductor light emitting device 10X of the comparative example has poor heat dissipation properties.

[0082] In addition, since the semiconductor light emitting device 10X of the comparative example is arranged on the circuit board so that the direction perpendicular to the surface of the circuit board coincides with the Y-axis direction of the substrate 20X, it is difficult to reduce the height of the semiconductor light emitting device 10X.

[0083] Furthermore, such light sources are required to have higher output. To achieve this, the semiconductor light emitting device 10X of the comparative example needs to have higher output from the LED element 40X. This increases the chip size of the semiconductor light emitting device 10X of the comparative example. This makes it even more difficult to reduce the height of the semiconductor light emitting device 10X of the comparative example.

[0084] Furthermore, the amount of heat generated by the semiconductor light emitting device 10X of the comparative example increases with the increase in output power. Therefore, when the semiconductor light emitting device 10X of the comparative example is used as a side-emitting type, the temperature of the LED element 40X may become excessively high due to poor heat dissipation.

[0085] To increase the output of the semiconductor light emitting device 10X of the comparative example, it is possible to use a VCSEL element instead of the LED element 40X. However, since the beam angle of the VCSEL element is narrower than that of the LED element 40X, it is difficult to use the VCSEL element for the semiconductor light emitting device 10X including the LED element 40X.

[0086] In this regard, in the first embodiment, an edge-emitting laser element that emits laser light in the +Y direction perpendicular to the thickness direction (Z-axis direction) of the substrate 20 is used as the semiconductor laser element 40 for achieving high output. That is, when the semiconductor laser element 40 is mounted on the first wiring 31 formed on the substrate front surface 21 of the substrate 20, the first light-emitting surface LS1 faces the +Y direction. Therefore, when the semiconductor laser device 10 is mounted on a circuit board, the first electrode 33 and the second electrode 34 formed on the substrate back surface 22 are mounted on the circuit board. This allows the semiconductor laser device 10 to have a lower profile when mounted on a circuit board, compared to the semiconductor light-emitting device 10X of the comparative example.

[0087] In addition, heat from the semiconductor laser device 10 is transferred to the circuit board via the first electrode 33 and the second electrode 34. Since the area of ​​the first electrode 33 is larger than the area of ​​the first substrate side surface 23, for example, the semiconductor laser device 10 has higher heat dissipation properties than the semiconductor light-emitting device 10X of the comparative example.

[0088] Furthermore, in the semiconductor laser device 10, the sealing resin 50 that seals the semiconductor laser element 40 contains a diffusing material 57. Therefore, the laser light emitted from the first light-emitting surface LS1 of the semiconductor laser element 40 is diffused (scattered) by the diffusing material 57. As a result, as shown in Fig. 6, the laser light is emitted not only from the first sealing end surface 53 of the sealing resin 50 but also from the end of the sealing surface 51 that is closer to the first sealing end surface 53. Therefore, the laser light emitted by the semiconductor laser device 10 has a wide beam angle, and can also be used as a semiconductor light-emitting device including an LED element.

[0089] [Effects] The semiconductor laser device 10 of the first embodiment has the following effects. (1-1) The semiconductor laser device 10 includes a substrate 20 having a substrate surface 21, a semiconductor laser element 40 provided on the substrate surface 21, and a light-transmitting sealing resin 50 having a sealing surface 51 facing the same side as the substrate surface 21 and a first sealing end surface 53 intersecting with the sealing surface 51, and sealing the semiconductor laser element 40. The sealing resin 50 includes a diffusing material 57 that diffuses light. The semiconductor laser element 40 includes a first light-emitting surface LS1 that emits laser light toward the first sealing end surface 53.

[0090] According to this configuration, the laser light emitted from the semiconductor laser element 40 toward the first sealing end face 53 is diffused (scattered) inside the sealing resin 50 by the diffusing material 57. As a result, the laser light emitted from the semiconductor laser device 10 has wide directivity. This allows the semiconductor laser device 10 to achieve directivity equivalent to that obtained from a semiconductor light-emitting device including an LED element. Typically, the semiconductor laser element 40 has higher output and lower power consumption than an LED element. Therefore, by utilizing the semiconductor laser element 40, which has the advantages of high output and low power consumption, the semiconductor laser device 10 can be applied to applications as a semiconductor light-emitting device including an LED element.

[0091] (1-2) The semiconductor laser device 10 includes a first wiring 31 provided on the substrate surface 21. The semiconductor laser element 40 is mounted on the first wiring 31 and is provided on the substrate surface 21 via this first wiring 31. The semiconductor laser device 10 further includes a first reflecting portion 70 that is provided on the first sealing end face 53 side of the first light-emitting surface LS1 of the semiconductor laser element 40 and that reflects a portion of the laser light emitted from the first light-emitting surface LS1.

[0092] According to this configuration, the laser light emitted from the first light-emitting surface LS1 is reflected by the first reflecting portion 70, and the reflected laser light is emitted from the first sealing end surface 53 toward a region above the substrate surface 21. Therefore, the amount of laser light emitted toward a region above the substrate surface 21 can be increased.

[0093] In addition, since laser light is prevented from being emitted from the first light-emitting surface LS1 toward a region below the substrate surface 21, for example, when the semiconductor laser device 10 is mounted on a circuit board, laser light can be prevented from being emitted from the first light-emitting surface LS1 toward the surface of the circuit board.

[0094] (1-3) The first wiring 31 has, as the first reflecting portion 70, a portion (first extending portion 31C) that extends from the first light-emitting surface LS1 toward the first sealed end surface 53 in a plan view. With this configuration, the first reflecting portion 70 can be configured without adding a component dedicated to the first reflecting portion 70, thereby suppressing an increase in the number of components of the semiconductor laser device 10.

[0095] (1-4) The semiconductor laser device 10 further includes a sidewall 60 that surrounds the sealing resin 50 and has an opening that exposes the first sealing end face 53. With this configuration, for example, when a mounter holds the semiconductor laser device 10 to mount the semiconductor laser device 10 on a circuit board, the sidewall 60 is held, thereby reducing the external force applied to the sealing resin 50. This reduces the force applied to the wires W sealed in the sealing resin 50.

[0096] (1-5) The length of the first extension 31C in the X-axis direction is longer than the length of the semiconductor laser element 40 in the X-axis direction. With this configuration, the laser light that is emitted from the first light-emitting surface LS1 and diffused by the diffusing material 57 in a direction parallel to the substrate surface 21 can be reflected by the first extension 31C. This makes it possible to increase the amount of laser light that is emitted toward a region above the substrate surface 21.

[0097] (1-6) The wire W is formed so that the bonded portion with the second wiring 32 is the first bond and the bonded portion with the anode electrode 47 is the second bond. With this configuration, the height (maximum height) of the wire W from the substrate surface 21 can be reduced, in other words, the distance between the substrate surface 21 and the wire W in the Z-axis direction can be reduced, thereby enabling the semiconductor laser device 10 to have a low profile.

[0098] (1-7) The compounding ratio of the diffusing material 57 to the sealing resin 50 is selected in the range of more than 0% to not more than 60%. According to this configuration, by selecting the compounding ratio of the diffusing material 57 in the range of more than 0% to not more than 60%, it is possible to suppress a decrease in the output of the laser light of the semiconductor laser device 10 and widen the beam angle.

[0099] (1-8) The compounding ratio of the diffusing material 57 to the sealing resin 50 is selected within the range of 20% to 60%. According to this configuration, by selecting the compounding ratio of the diffusing material 57 within the range of 20% to 60%, it is possible to suppress a decrease in the output power and a large decrease in the radiation intensity of the laser light from the semiconductor laser device 10 and to widen the beam angle.

[0100] Second Embodiment A semiconductor laser device 10 according to a second embodiment will be described with reference to FIGS. 13 to 15. The semiconductor laser device 10 according to the second embodiment differs from the semiconductor laser device 10 according to the first embodiment mainly in the configuration of the first reflector 70. The configuration of the first reflector 70 will be described in detail below, and components common to those of the semiconductor laser device 10 according to the first embodiment will be denoted by the same reference numerals and will not be described again. Note that in FIG. 13, the diffusing material 57 in the sealing resin 50 has been omitted to facilitate understanding of the drawing.

[0101] 13 and 14 , the semiconductor laser device 10 includes a reflector 80 as the first reflecting portion 70. The reflector 80 is provided on the substrate surface 21 of the substrate 20, and at least a portion of the reflector 80 is covered with a sealing resin 50. The reflector 80 is made of, for example, a metal material. Examples of the metal material that can be used include Al, Cu, and alloys thereof.

[0102] The configuration of the reflector 80 can be changed as desired. For example, the reflector 80 may be configured such that a surface plating (reflective film) is formed on the surface of a component made of a metal material. Alternatively, the reflector 80 may be configured such that a surface plating (reflective film) is formed on the surface of a component made of a resin material.

[0103] The reflector 80 is disposed on the substrate surface 21 closer to the first substrate side surface 23 (closer to the first sealed end surface 53) than the first element side surface 43 (first light-emitting surface LS1) of the semiconductor laser element 40. More specifically, the reflector 80 is disposed on the first extending portion 31C of the first wiring 31. In the second embodiment, the first wiring 31 is formed so that the first end surface 31A is at the same position as the first substrate side surface 23 in a plan view. The reflector 80 is bonded to the first wiring 31, for example, with an adhesive (not shown).

[0104] The arrangement of the reflector 80 can be changed as desired. In one example, the reflector 80 may be arranged on the substrate surface 21 closer to the first substrate side surface 23 than the first wiring 31. In other words, the substrate 20 has a space for arranging the reflector 80 between the first wiring 31 and the first substrate side surface 23 in the Y-axis direction. In this case, the reflector 80 is bonded to the substrate surface 21 by, for example, an adhesive.

[0105] In the second embodiment, the reflector 80 extends in the X-axis direction. The length of the reflector 80 in the X-axis direction is longer than, for example, the length of the semiconductor laser element 40 in the X-axis direction. The length of the reflector 80 in the X-axis direction is longer than, for example, the length of the first wiring 31 in the X-axis direction. In the second embodiment, both end faces of the reflector 80 in the X-axis direction are in contact with a pair of first side wall portions 61 of the side wall 60. The length of the reflector 80 in the X-axis direction can be changed as desired.

[0106] The reflector 80 has a bottom surface 81 facing the substrate surface 21, a side surface 82 extending upward from the bottom surface 81, and a reflective surface 83 connecting the bottom surface 81 and the side surface 82. The bottom surface 81 is a surface that contacts the adhesive and is formed as a flat surface perpendicular to the thickness direction (Z-axis direction) of the substrate 20. The side surface 82 extends upward from one of both edges of the bottom surface 81 in the Y-axis direction that is closer to the first substrate side surface 23. In the second embodiment, the side surface 82 is flush with the first sealing end surface 53 of the sealing resin 50. That is, the side surface 82 is exposed from the sealing resin 50. The reflective surface 83 connects the edge of the bottom surface 81 in the Y-axis direction that is closer to the semiconductor laser element 40 to the upper edge of the side surface 82. The reflective surface 83 faces in a direction intersecting the substrate surface 21. More specifically, the reflecting surface 83 is an inclined surface that inclines upward toward the first substrate side surface 23 (as it moves away from the semiconductor laser element 40). The inclination angle of the reflecting surface 83 is set depending on the range of the laser light to be emitted from the sealing resin 50. In one example, the inclination angle of the reflecting surface 83 is greater than 0° and less than 45°. Here, the inclination angle of the reflecting surface 83 is the acute angle formed between the bottom surface 81 and the reflecting surface 83.

[0107] In the second embodiment, the height dimension (size in the Z-axis direction) of the side surface 82 is equal to or greater than the thickness dimension (size in the Z-axis direction) of the semiconductor laser element 40. Therefore, when viewed from the Y-axis direction, the reflecting surface 83 is formed to overlap the entire surface of the first light-emitting surface LS1.

[0108] 15 , the laser light emitted from the first light-emitting surface LS1 is diffused (scattered) by the diffusing material 57 in the sealing resin 50 and is reflected by the reflecting surface 83 of the reflector 80. As a result, the laser light is emitted from a portion of the first sealing end surface 53 of the sealing resin 50 that is closer to the sealing surface 51 and from the sealing surface 51. The laser light is also reflected by the reflecting surface 83 and emitted from a portion of the sealing surface 51 that is closer to the second sealing end surface 54 than the first light-emitting surface LS1 of the semiconductor laser element 40.

[0109] [Effects] The semiconductor laser device 10 of the second embodiment has the following effects: (2-1) The semiconductor laser device 10 includes, as the first reflecting portion 70, a reflector 80 that is provided on the substrate surface 21 and includes a reflecting surface 83 that intersects with the substrate surface 21.

[0110] According to this configuration, the laser light directed from the first light-emitting surface LS1 toward the substrate surface 21 is reflected by the first reflecting portion 70, and the laser light emitted from the first light-emitting surface LS1 is emitted from the first sealed end surface 53 toward a position above the substrate surface 21. Therefore, the amount of laser light emitted toward a region above the substrate surface 21 can be increased.

[0111] In addition, by adjusting the inclination angle of the reflecting surface 83 of the reflector 80, the laser light emitted from the first light-emitting surface LS1 can be emitted from the sealing resin 50 in a desired direction in the area above the substrate surface 21.

[0112] (2-2) The inclination angle of the reflecting surface 83 of the reflector 80 is greater than 0° and less than 45°. With this configuration, part of the laser light emitted from the first light-emitting surface LS1 can be emitted upward in the +Y direction.

[0113] (2-3) The length of the reflector 80 in the X-axis direction is longer than the length of the semiconductor laser element 40 in the X-axis direction. With this configuration, the laser light that is emitted from the first light-emitting surface LS1 and diffused by the diffusing material 57 can be more easily reflected by the reflector 80. This makes it possible to increase the amount of laser light that is emitted toward a region above the substrate surface 21.

[0114] (2-4) Both ends of the reflector 80 in the X-axis direction are in contact with the pair of first side wall portions 61 of the side wall 60. With this configuration, the laser light that is emitted from the first light-emitting surface LS1 and diffused by the diffusing material 57 can be more easily reflected by the reflector 80. This makes it possible to increase the amount of laser light that is emitted toward a region above the substrate surface 21.

[0115] Third Embodiment A semiconductor laser device 10 according to a third embodiment will be described with reference to FIGS. 16 to 19. The semiconductor laser device 10 according to the third embodiment differs from the semiconductor laser device 10 according to the first embodiment mainly in the configuration of the substrate 20. The configuration of the substrate 20 will be described in detail below, and components common to those of the semiconductor laser device 10 according to the first embodiment will be denoted by the same reference numerals and will not be described again. Note that in FIG. 16, the diffusing material 57 in the sealing resin 50 has been omitted to make the drawing easier to understand.

[0116] 16 , the first end surface 31A of the first wiring 31 is formed so as to be at the same position as the first substrate side surface 23 in a plan view. That is, in the third embodiment, the length in the Y-axis direction of the first extending portion 31C is longer than the length in the Y-axis direction of the first extending portion 31C in the first embodiment.

[0117] Of both ends of the second wiring 32 in the Y axis direction, the end closer to the second substrate side surface 24 is formed so as to be in the same position as the second substrate side surface 24 in a plan view. Therefore, a part of the second wiring 32 is formed in a position overlapping with the second side wall portion 62 of the side wall 60 in a plan view. In the third embodiment, the length of the second wiring 32 in the Y axis direction is longer than the length of the second wiring 32 in the first embodiment.

[0118] 17 , of both ends of the first electrode 33 in the Y-axis direction, the end closer to the first substrate side surface 23 is formed so as to be in the same position as the first substrate side surface 23 in a plan view. That is, in the third embodiment, the length of the first electrode 33 in the Y-axis direction is longer than the length of the first electrode 33 in the first embodiment.

[0119] Of both ends of the second electrode 34 in the Y axis direction, the end closer to the second substrate side surface 24 is formed so as to be in the same position as the second substrate side surface 24 in a plan view. That is, in the third embodiment, the length of the second electrode 34 in the Y axis direction is longer than the length of the second electrode 34 in the first embodiment.

[0120] 18 , the substrate 20 has a first side surface electrode 37 formed on the first substrate side surface 23 and a second side surface electrode 38 formed on the second substrate side surface 24. The first side surface electrode 37 is formed continuously from the first electrode 33. More specifically, the first side surface electrode 37 is connected to one of both ends of the first electrode 33 in the Y-axis direction that is closer to the first substrate side surface 23. Although not shown, the length of the first side surface electrode 37 in the X-axis direction is equal to the length of the first electrode 33 in the X-axis direction, for example.

[0121] The first side electrode 37 is connected to the first wiring 31. More specifically, the first side electrode 37 is connected to the first end surface 31A of the first wiring 31. In this way, in the third embodiment, the first side electrode 37 connects the first electrode 33 and the first wiring 31. Since the length of the first wiring 31 in the X-axis direction is equal to the length of the first electrode 33 in the X-axis direction, the length of the first side electrode 37 in the X-axis direction is equal to, for example, the length of the first wiring 31 in the X-axis direction.

[0122] The second side surface electrode 38 is formed continuously from the second electrode 34. More specifically, the second side surface electrode 38 is connected to one of the two ends of the second electrode 34 in the Y axis direction that is closer to the second substrate side surface 24. The length of the second side surface electrode 38 in the X axis direction is equal to the length of the second electrode 34 in the X axis direction, for example.

[0123] The second side surface electrode 38 is connected to the second wiring 32. More specifically, the second side surface electrode 38 is connected to one of the two ends of the second wiring 32 in the Y-axis direction that is closer to the second substrate side surface 24. In this way, in the third embodiment, the second side surface electrode 38 connects the second electrode 34 and the second wiring 32. Since the length of the second wiring 32 in the X-axis direction is equal to the length of the second electrode 34 in the X-axis direction, the length of the second side surface electrode 38 in the X-axis direction is equal to, for example, the length of the second wiring 32 in the X-axis direction.

[0124] 19 , when the semiconductor laser device 10 is mounted on the circuit board PCB with the solder paste SP, the solder paste SP is formed so as to be in contact with the first electrode 33, the second electrode 34, the first side electrode 37, and the second side electrode 38. The solder paste SP forms fillets SPA on both the first substrate side surface 23 and the second substrate side surface 24 by the first side electrode 37 and the second side electrode 38.

[0125] The length of the first side electrode 37 in the X-axis direction and the length of the second side electrode 38 in the X-axis direction can each be changed arbitrarily. The length of the first side electrode 37 in the X-axis direction may be less than the length of the first wiring 31 in the X-axis direction, or may be longer than the length of the first wiring 31 in the X-axis direction. The length of the first side electrode 37 in the X-axis direction may be less than the length of the first electrode 33 in the X-axis direction, or may be longer than the length of the first electrode 33 in the X-axis direction. Furthermore, the length of the first side electrode 37 in the X-axis direction may be equal to the length of the first substrate side surface 23 in the X-axis direction.

[0126] The length in the X-axis direction of the second side electrode 38 may be less than the length in the X-axis direction of the second wiring 32, or may be greater than the length in the X-axis direction of the second wiring 32. The length in the X-axis direction of the second side electrode 38 may be less than the length in the X-axis direction of the second electrode 34, or may be greater than the length in the X-axis direction of the second electrode 34. Furthermore, the length in the X-axis direction of the second side electrode 38 may be equal to the length in the X-axis direction of the second substrate side surface 24.

[0127] Furthermore, the length of the first side electrode 37 in the Z-axis direction and the length of the second side electrode 38 in the Z-axis direction can each be changed arbitrarily. The length of the first side electrode 37 in the Z-axis direction may be shorter than the length of the first substrate side surface 23 in the Z-axis direction, i.e., the thickness of the substrate 20. In this case, the first side electrode 37 is not connected to the first wiring 31.

[0128] The length of the second side surface electrode 38 in the Z-axis direction may be shorter than the length of the second substrate side surface 24 in the Z-axis direction, i.e., the thickness of the substrate 20. In this case, the second side surface electrode 38 is not connected to the second wiring 32.

[0129] The position of the first end surface 31A of the first wiring 31 can be changed as desired. In one example, the first end surface 31A may be located more inward (closer to the second substrate side surface 24) than the first substrate side surface 23. In this case, the first wiring 31 is not connected to the first side surface electrode 37.

[0130] The position of the first end face, which is the end face closer to the second substrate side face 24 of both end faces of the second wiring 32 in the Y-axis direction, can be changed arbitrarily. In one example, the first end face of the second wiring 32 may be located more inward than the second substrate side face 24 (closer to the first substrate side face 23). In this case, the second wiring 32 is not connected to the second side face electrode 38.

[0131] Furthermore, the number of first side electrodes 37 and the number of second side electrodes 38 can be changed as desired. A plurality of first side electrodes 37 may be provided spaced apart from each other in the X-axis direction. A plurality of second side electrodes 38 may be provided spaced apart from each other in the X-axis direction. In short, each of the first side electrodes 37 and the second side electrodes 38 may have a configuration that allows the formation of a fillet SPA of the solder paste SP.

[0132] Also, at least one of the first via 35 and the second via 36 may be omitted. By omitting at least one of the first via 35 and the second via 36, ​​the configuration of the semiconductor laser device 10 can be simplified, thereby reducing the cost of the semiconductor laser device 10. By omitting both the first via 35 and the second via 36, ​​the cost reduction effect of the semiconductor laser device 10 can be enhanced.

[0133] [Effects] The semiconductor laser device 10 of the third embodiment has the following effects. (3-1) The substrate 20 includes a first substrate side surface 23 and a second substrate side surface 24 that connect the substrate front surface 21 and the substrate back surface 22. The first substrate side surface 23 faces the same side as the first light-emitting surface LS1, and the second substrate side surface 24 faces the opposite side from the first substrate side surface 23. A first side electrode 37 formed continuously from the first electrode 33 is formed on the first substrate side surface 23. A second side electrode 38 formed continuously from the second electrode 34 is formed on the second substrate side surface 24.

[0134] According to this configuration, heat transferred from the semiconductor laser element 40 to the substrate 20 is conducted to the first side electrode 37 and the second side electrode 38. Since both the first side electrode 37 and the second side electrode 38 are exposed to the outside of the semiconductor laser device 10, the heat conducted to the first side electrode 37 and the second side electrode 38 is dissipated to the outside of the semiconductor laser device 10. In this way, the heat of the semiconductor laser element 40 is easily dissipated to the outside of the substrate 20. Therefore, the heat dissipation performance of the semiconductor laser device 10 can be improved.

[0135] Furthermore, for example, when the semiconductor laser device 10 is mounted on a circuit board PCB using solder paste SP, a fillet SPA is formed by the first side electrode 37 and the second side electrode 38. This allows an operator to visually check the mounting state of the semiconductor laser device 10 on the circuit board PCB based on the fillet SPA. In addition, the formation of the fillet SPA increases the bonding area between the semiconductor laser device 10 and the circuit board PCB. This facilitates heat dissipation from the semiconductor laser device 10 to the circuit board PCB and improves the bonding strength between the semiconductor laser device 10 and the circuit board PCB.

[0136] (3-2) The first side electrode 37 connects the first electrode 33 and the first wiring 31. The second side electrode 38 connects the second wiring 32 and the second electrode 34. With this configuration, heat from the first wiring 31 moves to the first electrode 33 via the first side electrode 37. Heat from the second wiring 32 moves to the second electrode 34 via the second side electrode 38. This improves the heat dissipation performance of the semiconductor laser device 10.

[0137] Furthermore, when the semiconductor laser device 10 is mounted on the circuit board PCB using solder paste SP, the height of the fillet SPA formed by the first side electrode 37 and the second side electrode 38 can be increased, making it easier for workers to visually check the mounting state of the semiconductor laser device 10 on the circuit board PCB.

[0138] Fourth Embodiment A semiconductor laser device 10 according to a fourth embodiment will be described with reference to FIGS. 20 to 23. The semiconductor laser device 10 according to the fourth embodiment differs from the semiconductor laser device 10 according to the first embodiment mainly in the configuration of the substrate 20. The configuration of the substrate 20 will be described in detail below, and components common to those of the semiconductor laser device 10 according to the first embodiment will be denoted by the same reference numerals and will not be described again. Note that in FIG. 20, the diffusing material 57 in the sealing resin 50 has been omitted to make the drawing easier to understand.

[0139] As shown in FIG. 20 , the substrate 20 has a first end face through hole 39A formed in the first substrate side surface 23 and a second end face through hole 39B formed in the second substrate side surface 24. In the fourth embodiment, the first end face through hole 39A is formed at the center of the first substrate side surface 23 in the X-axis direction in a plan view. The first end face through hole 39A is recessed from the first substrate side surface 23 toward the second substrate side surface 24. The second end face through hole 39B is formed at the center of the second substrate side surface 24 in the X-axis direction in a plan view. The second end face through hole 39B is recessed from the second substrate side surface 24 toward the first substrate side surface 23. The first end face through hole 39A and the second end face through hole 39B each have a substantially semicircular shape in a plan view. Both the first end face through hole 39A and the second end face through hole 39B are provided to penetrate the substrate 20 in its thickness direction (Z-axis direction). 23 , the first end face through hole 39A connects the first wiring 31 and the first electrode 33. The first end face through hole 39A is formed of a material containing copper, for example. This electrically connects the first wiring 31 and the first electrode 33 via the first end face through hole 39A. The second end face through hole 39B connects the second wiring 32 and the second electrode 34. The second end face through hole 39B is formed of a material containing copper, for example. This electrically connects the second wiring 32 and the second electrode 34 via the second end face through hole 39B.

[0140] 21 , a portion of the first end face through hole 39A is provided so as to overlap the first end face 31A of the first wiring 31. In other words, a recess recessed from the first end face 31A toward the second substrate side face 24 is formed in the central portion of the first end face 31A in the X-axis direction.

[0141] The second end face through hole 39B is provided so as to overlap the second wiring 32. That is, a recess recessed from the second substrate side surface 24 toward the first substrate side surface 23 is formed in the center of the second wiring 32 in the X-axis direction.

[0142] 22 , a portion of the first end face through hole 39A is provided so as to overlap the first electrode 33. In other words, of both ends in the Y-axis direction of the first electrode 33, the end closer to the first substrate side surface 23 has a recess formed in its central portion in the X-axis direction, recessed from the end toward the second substrate side surface 24.

[0143] The second end face through hole 39B is provided so as to overlap the second electrode 34. That is, a recess that is recessed from the second substrate side surface 24 toward the first substrate side surface 23 is formed in the center of the second electrode 34 in the X-axis direction.

[0144] As shown in Figure 20, the semiconductor laser device 10 includes a resist 90 that covers the first facet through hole 39A. In the fourth embodiment, the resist 90 is formed so as to cover the entire first facet through hole 39A. In plan view, the resist 90 has a rectangular shape with the X-axis direction as the longitudinal direction and the Y-axis direction as the lateral direction. In plan view, the resist 90 is disposed spaced apart from the semiconductor laser element 40 in the Y-axis direction. The resist 90 is provided on the substrate surface 21. A portion of the resist 90 is provided on the first wiring 31. The resist 90 is formed of, for example, an insulating material.

[0145] The length of the resist 90 in the X-axis direction is longer than the length of the semiconductor laser element 40 in the X-axis direction. The length of the resist 90 in the X-axis direction can be changed as desired. In one example, the length of the resist 90 in the X-axis direction may be equal to or shorter than the length of the semiconductor laser element 40 in the X-axis direction. Furthermore, the length of the resist 90 in the X-axis direction may be equal to or longer than the length of the first wiring 31 in the X-axis direction.

[0146] Furthermore, the resist 90 may be formed of a material having a higher reflectivity than the substrate 20. In one example, the resist 90 is formed of a white material. In this case, the resist 90 can be said to constitute the first reflecting portion 70. In other words, at least a portion of the laser light emitted from the first light-emitting surface LS1 of the semiconductor laser element 40 and directed toward the substrate surface 21 is reflected by the resist 90 toward the first sealing end face 53.

[0147] Further, the second end face through hole 39B is covered by the second side wall portion 62 of the side wall 60. In the fourth embodiment, the second side wall portion 62 covers the entire second end face through hole 39B.

[0148] 21 and 22 , in the fourth embodiment, the first via 35 and the second via 36 (both see FIG. 3 ) are omitted. Note that the semiconductor laser device 10 of the fourth embodiment may include at least one of the first via 35 and the second via 36. This can improve the heat dissipation performance of the semiconductor laser device 10.

[0149] The semiconductor laser device 10 may also include a second via 36 instead of the second end face through hole 39B. The semiconductor laser device 10 may also include a second side electrode 38 (see FIG. 18 ) instead of the second end face through hole 39B.

[0150] [Effects] The semiconductor laser device 10 of the fourth embodiment has the following effects: (4-1) The substrate 20 includes a substrate back surface 22 opposite to the substrate front surface 21, a first substrate side surface 23 connecting the substrate front surface 21 and the substrate back surface 22 and facing the same side as the first light-emitting surface LS1, and a second substrate side surface 24 opposite to the first substrate side surface 23. The semiconductor laser device 10 further includes a first end face through hole 39A recessed from the first substrate side surface 23 toward the second substrate side surface 24 and provided so as to penetrate the substrate 20 in its thickness direction.

[0151] According to this configuration, heat from first wiring 31 moves to first electrode 33 via first end face through hole 39A. In addition, heat from first wiring 31 is dissipated from first end face through hole 39A to the outside of semiconductor laser device 10. Therefore, the heat dissipation performance of semiconductor laser device 10 can be improved.

[0152] Additionally, when the semiconductor laser device 10 is mounted on a circuit board PCB (see FIG. 19 ) using solder paste SP, a fillet SPA is formed by the first end face through-hole 39A. This allows an operator to visually check the state of the semiconductor laser device 10 mounted on the circuit board PCB. Additionally, the formation of the fillet SPA increases the bonding area between the semiconductor laser device 10 and the circuit board PCB. This facilitates heat dissipation from the semiconductor laser device 10 to the circuit board PCB and improves the bonding strength between the semiconductor laser device 10 and the circuit board PCB.

[0153] (4-2) The semiconductor laser device 10 further includes a resist 90 that covers the first-end-face through-hole 39A from the side of the substrate surface 21. This configuration makes it possible to prevent the fillet SPA formed by the first-end-face through-hole 39A from rising above the substrate surface 21.

[0154] (4-3) The resist 90 may be made of a material having a higher reflectivity than the substrate 20. With this configuration, the resist 90 can form the first reflecting portion 70.

[0155] (4-4) The semiconductor laser device 10 further includes a second end face through-hole 39B recessed from the second substrate side face 24 toward the first substrate side face 23 and provided to penetrate the substrate 20 in its thickness direction. This configuration provides the same effect as in (4-1) above.

[0156] Fifth Embodiment A semiconductor laser device 10 according to a fifth embodiment will be described with reference to FIGS. 24 to 26. The semiconductor laser device 10 according to the fifth embodiment differs from the semiconductor laser device 10 according to the first embodiment mainly in that a photodiode 110 is added and in the wiring. The configuration of the substrate 20 will be described in detail below, and components common to those of the semiconductor laser device 10 according to the first embodiment will be designated by the same reference numerals and will not be described again. Note that in FIG. 24, the diffusing material 57 in the sealing resin 50 has been omitted to facilitate understanding of the drawing.

[0157] As shown in FIG. 24 , the semiconductor laser device 10 further includes a third wiring 100 formed on the substrate surface 21 of the substrate 20, and a photodiode 110 that receives laser light emitted from the second light emitting surface LS2 of the semiconductor laser element 40.

[0158] The third wiring 100 is disposed closer to the second substrate side surface 24 than the first wiring 31. The third wiring 100 is disposed in a position aligned in the Y-axis direction with the second wiring 32. The third wiring 100 is disposed closer to the third substrate side surface 25 than the second wiring 32. As described above, in the fifth embodiment, in order to provide a space for arranging the third wiring 100, the length of the second wiring 32 in the X-axis direction is shorter than in the first embodiment.

[0159] As shown in Figures 25 and 26, the semiconductor laser device 10 further includes a third electrode 101 formed on the rear surface 22 of the substrate 20, and a via 102 that electrically connects the third wiring 100 and the third electrode 101.

[0160] 25 , the third electrode 101 is disposed closer to the second substrate side surface 24 than the first electrode 33. The third electrode 101 is disposed in a position aligned in the Y-axis direction with the second electrode 34. The third electrode 101 is disposed closer to the third substrate side surface 25 than the second electrode 34. The third electrode 101 is disposed in a position overlapping with the third wiring 100 in a plan view. As such, in the fifth embodiment, the length of the second electrode 34 in the X-axis direction is shorter than in the first embodiment in order to provide a space for arranging the third electrode 101.

[0161] 26 , the via 102 is provided at a position overlapping both the third wiring 100 and the third electrode 101 in a plan view. The via 102 is provided so as to penetrate the substrate 20 in its thickness direction (Z-axis direction). The via 102 is connected to both the third wiring 100 and the third electrode 101. Therefore, the third wiring 100 and the third electrode 101 are electrically connected by the via 102.

[0162] In the illustrated example, the number of second vias 36 in the fifth embodiment is smaller than that in the first embodiment due to the shortened length in the X-axis direction of both the second wiring 32 and the second electrode 34. In the illustrated example, two second vias 36 are provided.

[0163] The number and arrangement of each of the first vias 35, the second vias 36, and the vias 102 can be changed as desired. In one example, the number of second vias 36 may be one, or three or more. Two second vias 36 may be aligned with each other in the X-axis direction and spaced apart from each other in the Y-axis direction. Furthermore, the two second vias 36 may be spaced apart from each other in directions intersecting both the X-axis direction and the Y-axis direction in a plan view.

[0164] 26 , the photodiode 110 is mounted on the third wiring 100. More specifically, the photodiode 110 is joined to the third wiring 100 by a conductive bonding material SD. In other words, the photodiode 110 is mounted on the third wiring 100. Both the third wiring 100 and the photodiode 110 are sealed with a sealing resin 50.

[0165] 24 , the photodiode 110 is disposed closer to the second substrate side surface 24 than the semiconductor laser element 40 in a plan view. The photodiode 110 is provided on the substrate surface 21 between the semiconductor laser element 40 and the second sealing end surface 54. The photodiode 110 is disposed at a position overlapping with the semiconductor laser element 40 when viewed from the Y-axis direction. In the illustrated example, the photodiode 110 is disposed at a position partially overlapping with the semiconductor laser element 40 when viewed from the Y-axis direction.

[0166] The position of the photodiode 110 in the X-axis direction can be changed as desired. In one example, the photodiode 110 may be arranged so that the semiconductor laser element 40 and the photodiode 110 entirely overlap each other when viewed from the Y-axis direction. In another example, the photodiode 110 may be arranged closer to the third substrate side surface 25 than the semiconductor laser element 40 when viewed from the Y-axis direction.

[0167] 26 , the photodiode 110 has an anode electrode 111 formed on its front surface and a cathode electrode 112 formed on its back surface. The front surface of the photodiode 110 faces the same side as the substrate front surface 21, and the back surface of the photodiode 110 faces the substrate front surface 21.

[0168] The cathode electrode 112 is in contact with the conductive bonding material SD. Therefore, the cathode electrode 112 is electrically connected to the third wiring 100 by the conductive bonding material SD. Since the third wiring 100 is electrically connected to the third electrode 101, it can be said that the cathode electrode 112 is electrically connected to the third electrode 101.

[0169] 24 , the semiconductor laser device 10 includes a wire WD that connects the photodiode 110 and the second wiring 32. The wire WD is sealed with a sealing resin 50. The wire WD is formed of, for example, the same material as the wire W. The wire WD is connected to an anode electrode 111 formed on the surface of the photodiode 110. As a result, the anode electrode 111 is electrically connected to the second wiring 32 by the wire WD. Since the second wiring 32 is electrically connected to the second electrode 34 (see FIG. 25 ), it can be said that the anode electrode 111 is electrically connected to the second electrode 34.

[0170] When the photodiode 110 receives laser light emitted from the second light emitting surface LS2 of the semiconductor laser element 40, a current flows from the anode electrode 111 to the cathode electrode 112. The current flowing through the photodiode 110 varies depending on, for example, the intensity of the received light.

[0171] For example, if a control device for controlling the semiconductor laser device 10 is provided outside the semiconductor laser device 10, the control device acquires the current of the photodiode 110 through the second electrode 34 and the third electrode 101. The control device can control the output of the semiconductor laser element 40 to be constant in accordance with the current of the photodiode 110.

[0172] [Effects] The semiconductor laser device 10 of the fifth embodiment has the following effects: (5-1) The semiconductor laser device 10 further includes a photodiode 110 that is provided on the substrate surface 21 between the semiconductor laser element 40 and the second sealing end face 54 and that receives laser light emitted from the second light-emitting surface LS2.

[0173] According to this configuration, the photodiode 110 receives the laser light emitted from the second light-emitting surface LS2, and thus information regarding the radiation intensity of the laser light emitted from the second light-emitting surface LS2 can be provided to, for example, a control device external to the semiconductor laser device 10. This allows the control device to control the output of the semiconductor laser element 40 to be constant.

[0174] (5-2) The second wiring 32 is a wiring common to the wire W connected to the anode electrode 47 of the semiconductor laser element 40 and the wire WD connected to the anode electrode 111 of the photodiode 110 .

[0175] With this configuration, the semiconductor laser device 10 can be made smaller in plan view compared to when two second wirings are formed: one dedicated second wiring to which the wire W is connected and one dedicated second wiring to which the wire WD is connected.

[0176] Sixth Embodiment A semiconductor laser device 10 according to a sixth embodiment will be described with reference to FIGS. 27 to 29. The semiconductor laser device 10 according to the sixth embodiment differs from the semiconductor laser device 10 according to the first embodiment mainly in the configuration of the semiconductor laser element and wiring. The configuration of the semiconductor laser element and wiring will be described in detail below, and components common to the semiconductor laser device 10 according to the first embodiment will be denoted by the same reference numerals and will not be described again. Note that in FIG. 27, the diffusing material 57 in the sealing resin 50 has been omitted to facilitate understanding of the drawing.

[0177] 27, the semiconductor laser device 10 includes a multi-array type semiconductor laser element 120. A Fabry-Perot type laser diode element is used as the semiconductor laser element 120. The semiconductor laser element 120 is formed in a flat plate shape with its thickness direction aligned in the Z-axis direction.

[0178] In the sixth embodiment, the semiconductor laser element 120 is formed in a rectangular shape with the X-axis direction as the short side direction and the Y-axis direction as the long side direction in a plan view. The semiconductor laser element 120 includes a plurality of light-emitting portions. The plurality of light-emitting portions includes a first light-emitting portion PD1, a second light-emitting portion PD2, a third light-emitting portion PD3, and a fourth light-emitting portion PD4. The first to fourth light-emitting portions PD1 to PD4 are aligned in the X-axis direction on the first light-emitting surface LS1.

[0179] The semiconductor laser element 120 has an element front surface 121 , an element back surface 122 facing the opposite side to the element front surface 121 , and first to fourth element side surfaces 123 to 126 connecting the element front surface 121 and the element back surface 122 .

[0180] The element front surface 121 faces the same side as the substrate front surface 21 of the substrate 20, and the element back surface 122 faces the substrate front surface 21. The first element side surface 123 and the second element side surface 124 constitute both end faces in the longitudinal direction of the semiconductor laser element 120, and the third element side surface 125 and the fourth element side surface 126 constitute both end faces in the lateral direction of the semiconductor laser element 120. In the sixth embodiment, the first element side surface 123 and the second element side surface 124 constitute both end faces in the Y-axis direction of the semiconductor laser element 120, and the third element side surface 125 and the fourth element side surface 126 constitute both end faces in the X-axis direction of the semiconductor laser element 40.

[0181] Here, in the sixth embodiment, the first element side surface 123 configures a first light-emitting surface LS1 that emits laser light of the semiconductor laser element 120. The first element side surface 123 (first light-emitting surface LS1) faces the same side as the first substrate side surface 23. Therefore, in a plan view, the semiconductor laser element 120 emits laser light that is mainly directed in the +Y direction.

[0182] The second element side surface 124 constitutes a second light-emitting surface LS2 that emits laser light from the semiconductor laser element 120. The second element side surface 124 (first light-emitting surface LS2) faces the same side as the second substrate side surface 24. Therefore, in a plan view, the semiconductor laser element 120 emits laser light that is mainly directed in the −Y direction.

[0183] In the sixth embodiment, the ratio between the power of the laser light emitted from the first light-emitting surface LS1 and the power of the laser light emitted from the second light-emitting surface LS2 is, for example, 9: 1. In one example, in each of the first to fourth light-emitting units PD1 to PD4, the ratio between the power of the laser light emitted from the first light-emitting surface LS1 and the power of the laser light emitted from the second light-emitting surface LS2 is, for example, 9:1.

[0184] The semiconductor laser element 120 has anode electrodes 127A to 127D formed on the element front surface 121 and a cathode electrode 128 formed on the element back surface 122. Each of the anode electrodes 127A to 127D is formed at an end of the element front surface 121 closer to the second substrate side surface 24. The anode electrodes 127A to 127D are arranged spaced apart from each other in the X-axis direction while being aligned with each other in the Y-axis direction. In the illustrated example, the anode electrodes 127A to 127D are arranged in the order of 127A, 127B, 127C, and 127D from the third element side surface 125 to the fourth element side surface 126.

[0185] 27, in the sixth embodiment, the semiconductor laser device 10 includes second wirings 32A to 32D instead of the second wiring 32 (see FIG. 2). The second wirings 32A to 32D are formed of a material containing, for example, copper, similar to the second wiring 32.

[0186] Each of the second wirings 32A to 32D is disposed closer to the second substrate side surface 24 than the first wirings 31. The second wirings 32A to 32D are arranged spaced apart from each other in the X-axis direction while being aligned with each other in the Y-axis direction. In the illustrated example, the second wirings 32A to 32D are arranged from the third substrate side surface 25 toward the fourth substrate side surface 26 in the order of second wirings 32A, 32B, 32C, 32D.

[0187] 28, in the sixth embodiment, the semiconductor laser device 10 includes second electrodes 34A to 34D instead of the second electrode 34 (see FIG. 4). The second electrodes 34A to 34D are formed of a material containing, for example, copper, similar to the second electrode 34.

[0188] Each of the second electrodes 34A to 34D is disposed closer to the second substrate side surface 24 than the first electrode 33. The second electrodes 34A to 34D are arranged spaced apart from each other in the X-axis direction while being aligned with each other in the Y-axis direction. In the illustrated example, the second electrodes 34A to 34D are arranged from the third substrate side surface 25 toward the fourth substrate side surface 26 in the order of second electrodes 34A, 34B, 34C, 34D.

[0189] As shown in Figures 27 and 28, the second electrodes 34A to 34D are individually electrically connected to the second wirings 32A to 32D by the second vias 36A to 36D. More specifically, the second wiring 32A is electrically connected to the second electrode 34A via the second via 36A. The second wiring 32B is electrically connected to the second electrode 34B via the second via 36B. The second wiring 32C is electrically connected to the second electrode 34C via the second via 36C. The second wiring 32D is electrically connected to the second electrode 34D via the second via 36D. The number and arrangement of each of the second vias 36A to 36D can be changed as desired.

[0190] Next, the electrical connection structure of the semiconductor laser device 120 will be described. As shown in Fig. 29, the cathode electrode 128 is in contact with the conductive bonding material SD. That is, the cathode electrode 128 is electrically connected to the first wiring 31 by the conductive bonding material SD. Therefore, the cathode electrode 128 is electrically connected to the first electrode 33 via the first wiring 31 and the plurality of first vias 35.

[0191] 27, the semiconductor laser device 10 includes wires W1 to W4 that electrically connect the anode electrodes 127A to 127D to the second wirings 32A to 32D, respectively. The wires W1 to W4 are made of the same material as the wires W in the first embodiment (see FIG. 2).

[0192] The anode electrode 127A is electrically connected to the second wiring 32A by a wire W1. The anode electrode 127B is electrically connected to the second wiring 32B by a wire W2. The anode electrode 127C is electrically connected to the second wiring 32C by a wire W3. The anode electrode 127D is electrically connected to the second wiring 32D by a wire W4. The anode electrodes 127A to 127D are individually electrically connected to the second electrodes 34A to 34D via the second wirings 32A to 32D and the plurality of second vias 36A to 36D, respectively.

[0193] Next, the multiple light-emitting portions of the semiconductor laser element 120 will be described. In the fifth embodiment, the semiconductor laser element 120 has a configuration in which multiple light-emitting portions are arranged on one light-emitting surface. More specifically, the semiconductor laser element 120 has a configuration in which the first to fourth light-emitting portions PD1 to PD4 are arranged in the X-axis direction on the first light-emitting surface LS1. It can also be said that the semiconductor laser element 120 has a configuration in which the first to fourth light-emitting portions PD1 to PD4 are arranged in the X-axis direction on the second light-emitting surface LS2.

[0194] In one example, the first to fourth light-emitting units PD1 to PD4 may be configured to have different laser beam outputs, or may be configured to have the same laser beam outputs. One to three of the first to fourth light-emitting units PD1 to PD4 may be configured to have a different laser beam output from the other light-emitting units. Furthermore, the laser beam output of the semiconductor laser element 120 can be adjusted by changing the number of light-emitting units that emit laser beams among the first to fourth light-emitting units PD1 to PD4.

[0195] [Effects] According to the semiconductor laser device 10 of the sixth embodiment, the following effects can be obtained: (6-1) The semiconductor laser element 120 has a plurality of light-emitting portions (first to fourth light-emitting portions PD1 to PD4).

[0196] According to this configuration, for example, by emitting laser light from a plurality of light-emitting units, it is possible to improve the output of laser light emitted from the semiconductor laser element 120 compared to a configuration in which laser light is emitted from a single light-emitting unit. Furthermore, by changing the number of light-emitting units that emit laser light, it is possible to easily adjust the output of laser light emitted from the semiconductor laser element 120.

[0197] Seventh Embodiment A semiconductor laser device 10 according to a seventh embodiment will be described with reference to FIGS. 30 to 33. The semiconductor laser device 10 according to the seventh embodiment differs from the semiconductor laser device 10 according to the first embodiment mainly in that it further includes a drive circuit element 130 and in the configuration of the wiring. The configuration of the drive circuit element 130 and the configuration of the wiring will be described in detail below, and components common to the components of the semiconductor laser device 10 according to the first embodiment will be denoted by the same reference numerals and will not be described again. Note that in FIG. 30, the diffusing material 57 in the sealing resin 50 has been omitted to make the drawing easier to understand.

[0198] 30 , a driving circuit wiring 140, a gate wiring 141G, and a source wiring 141S are formed on the substrate surface 21 of the substrate 20 in place of the second wiring 32. In other words, the semiconductor laser device 10 further includes a driving circuit wiring 140, a gate wiring 141G, and a source wiring 141S.

[0199] The drive circuit wiring 140 is arranged closer to the second substrate side surface 24 than the first wiring 31. In the seventh embodiment, the drive circuit wiring 140 is arranged between the first wiring 31 and the second substrate side surface 24 in the Y-axis direction. The drive circuit wiring 140 is formed in a rectangular shape with the X-axis direction as the longitudinal direction and the Y-axis direction as the lateral direction in a plan view.

[0200] Both the gate wiring 141G and the source wiring 141S are arranged closer to the second substrate side surface 24 than the drive circuit wiring 140. In the seventh embodiment, both the gate wiring 141G and the source wiring 141S are arranged between the drive circuit wiring 140 and the second substrate side surface 24 in the Y-axis direction. The drive circuit wiring 140 is formed in a rectangular shape with the X-axis direction as the longitudinal direction and the Y-axis direction as the lateral direction in a plan view. The length of the gate wiring 141G in the X-axis direction and the length of the source wiring 141S in the X-axis direction are each shorter than the length of the drive circuit wiring 140 in the X-axis direction. In the seventh embodiment, the gate wiring 141G is arranged in the center of the substrate surface 21 in the X-axis direction. The source wiring 141S is arranged closer to the third substrate side surface 25 than the gate wiring 141G in the X-axis direction. Note that the length and arrangement of the gate wiring 141G and the source wiring 141S in the X-axis direction can be changed as desired.

[0201] Unlike the first embodiment, the first wiring 31 of the seventh embodiment has a longer length in the X-axis direction to match the drive circuit wiring 140. In the seventh embodiment, the length of the first wiring 31 in the X-axis direction is equal to the length of the drive circuit wiring 140 in the X-axis direction. Note that the length of the first wiring 31 in the X-axis direction and the length of the drive circuit wiring 140 in the X-axis direction may be different from each other.

[0202] 31, instead of the second electrode 34 (see FIG. 4), a drive circuit electrode 142, a gate electrode 143G, and a source electrode 143S are formed on the rear surface 22 of the substrate 20. In other words, the semiconductor laser device 10 further includes a drive circuit electrode 142, a gate electrode 143G, and a source electrode 143S.

[0203] The drive circuit electrode 142 is disposed closer to the second substrate side surface 24 than the first electrode 33. Both the gate electrode 143G and the source electrode 143S are disposed closer to the second substrate side surface 24 than the drive circuit electrode 142. That is, in a plan view, both the gate electrode 143G and the source electrode 143S are disposed between the drive circuit electrode 142 and the second substrate side surface 24 in the Y-axis direction. In a plan view, the drive circuit electrode 142 is disposed between the first electrode 33 and the gate electrode 143G and the source electrode 143S in the Y-axis direction.

[0204] As shown in Figures 31 and 32, the semiconductor laser device 10 further includes a drive circuit via 144 that electrically connects the drive circuit wiring 140 and the drive circuit electrode 142, a gate via 145G that electrically connects the gate wiring 141G and the gate electrode 143G, and a source via 145S that electrically connects the source wiring 141S and the source electrode 143S.

[0205] A plurality of drive circuit vias 144 are provided. Each drive circuit via 144 is arranged at a position overlapping both the drive circuit wiring 140 and the drive circuit electrode 142 in a plan view. The drive circuit vias 144 are arranged at a distance from each other in both the X-axis direction and the Y-axis direction. Each drive circuit via 144 penetrates the substrate 20 in the Z-axis direction. Each drive circuit via 144 is in contact with both the drive circuit wiring 140 and the drive circuit electrode 142.

[0206] The gate via 145G is disposed at a position overlapping both the gate wiring 141G and the gate electrode 143G in a plan view. The gate via 145G penetrates the substrate 20 in the Z-axis direction. The gate via 145G is in contact with both the gate wiring 141G and the gate electrode 143G.

[0207] The source via 145S is disposed at a position overlapping both the source wiring 141S and the source electrode 143S in a plan view. The source via 145S penetrates the substrate 20 in the Z-axis direction. The source via 145S is in contact with both the source wiring 141S and the source electrode 143S. The number and arrangement of the drive circuit vias 144, the gate vias 145G, and the source vias 145S can be changed as desired.

[0208] 30 , the drive circuit element 130 is an element that drives the semiconductor laser element 40. The drive circuit element 130 includes a switching element 131 and a capacitor 132. The drive circuit element 130 is mounted on the substrate surface 21. More specifically, the switching element 131 and each of the two capacitors 132 are mounted on the substrate surface 21.

[0209] The switching element 131 is a semiconductor element that controls the current supplied to the semiconductor laser element 40. The switching element 131 is, for example, a transistor. In the seventh embodiment, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is used as the switching element 131. The switching element 131 includes a source electrode 131S, a drain electrode 131D (see FIG. 32 ), and a gate electrode 131G.

[0210] The switching element 131 is formed in a flat plate shape. As shown in FIG. 32 , the thickness of the switching element 131 is greater than the thickness of the semiconductor laser element 40. The shape of the switching element 131 in a planar view is rectangular. In the seventh embodiment, the shape of the switching element 131 in a planar view is square. The shape of the switching element 131 in a planar view can be arbitrarily changed. For example, the shape of the switching element 131 in a planar view may be rectangular with the X-axis direction as the longitudinal direction and the Y-axis direction as the lateral direction. The area of ​​the switching element 131 in a planar view is larger than the area of ​​the semiconductor laser element 40. In this way, the chip size of the switching element 131 is larger than the chip size of the semiconductor laser element 40. The chip size of the switching element 131 can be arbitrarily changed. For example, the thickness of the switching element 131 may be equal to or smaller than the thickness of the semiconductor laser element 40.

[0211] The switching element 131 has a switching element front surface 131A and a switching element back surface 131B that face opposite each other in the Z-axis direction. The switching element front surface 131A faces the same side as the substrate front surface 21. A source electrode 131S and a gate electrode 131G are formed on the switching element front surface 131A. The source electrode 131S is formed over most of the switching element front surface 131A. As shown in FIG. 30 , the gate electrode 131G is formed at one of both ends of the switching element front surface 131A in the Y-axis direction, the end closest to the second substrate side surface 24, and in the center in the X-axis direction.

[0212] 32 , the switching element back surface 131B faces the same side as the substrate back surface 22. It can also be said that the switching element back surface 131B faces the substrate front surface 21. A drain electrode 131D is formed on the switching element back surface 131B. In this way, a vertical structure MOSFET is used for the switching element 131 of the seventh embodiment.

[0213] The switching element rear surface 131B is joined to the drive circuit wiring 140 by a conductive bonding material SD. Therefore, the drain electrode 131D is electrically connected to the drive circuit wiring 140 via the conductive bonding material SD.

[0214] As shown in FIG. 30 , the source electrode 131S and the anode electrode 47 of the semiconductor laser element 40 are connected by a wire WF. This electrically connects the source electrode 131S and the anode electrode 47. The gate electrode 131G and the gate wiring 141G are connected by a wire WG. This electrically connects the gate electrode 131G and the gate wiring 141G. Furthermore, the source electrode 131S and the source wiring 141S are connected by a wire WS. This electrically connects the source electrode 131S and the source wiring 141S. The wires WF, WG, and WS are formed of, for example, the same material as the wire W in the first embodiment (see FIG. 2 ). The number of wires WF, WG, and WS can be changed as desired.

[0215] The capacitor 132 is an electronic component that cooperates with the switching element 131 to supply current to the semiconductor laser element 40. For example, a plurality of capacitors 132 (two in the seventh embodiment) are provided. Each capacitor 132 is formed in a substantially rectangular parallelepiped shape. In plan view, the shape of the capacitor 132 is a rectangle with the Y-axis direction as the longitudinal direction and the X-axis direction as the lateral direction.

[0216] The capacitor 132 includes a first electrode 132A and a second electrode 132B. The first electrode 132A and the second electrode 132B are formed to be spaced apart from each other in the longitudinal direction of the capacitor 132, i.e., in the Y-axis direction. In the illustrated example, the first electrode 132A is provided at one of both ends of the capacitor 132 in the Y-axis direction that is closer to the first substrate side surface 23, and the second electrode 132B is provided at one of both ends of the capacitor 132 in the Y-axis direction that is closer to the second substrate side surface 24. In the seventh embodiment, the multiple capacitors 132 have the same shape and size. Furthermore, the multiple capacitors 132 have the same capacitance.

[0217] Each capacitor 132 is disposed so as to straddle the first wiring 31 and the drive circuit wiring 140 in the Y-axis direction. The first electrode 132A of each capacitor 132 is joined to the first wiring 31 with a conductive bonding material (not shown). This electrically connects the first electrode 132A of each capacitor 132 to the first wiring 31. Because the cathode electrode 48 (see FIG. 32 ) of the semiconductor laser element 40 is electrically connected to the first wiring 31, it can also be said that the first electrode 132A is electrically connected to the cathode electrode 48 via the first wiring 31. Because the first wiring 31 is electrically connected to the first electrode 33 (see FIG. 32 ), both the first electrode 132A of each capacitor 132 and the cathode electrode 48 of the semiconductor laser element 40 are electrically connected to the first electrode 33.

[0218] The second electrode 132B of each capacitor 132 is joined to the drive circuit wiring 140 by a conductive bonding material (not shown). More specifically, the second electrode 132B of each capacitor 132 is electrically connected to the drive circuit wiring 140. Since the drain electrode 131D (see FIG. 32 ) of the switching element 131 is electrically connected to the drive circuit wiring 140, the second electrode 132B of each capacitor 132 is electrically connected to the drain electrode 131D. Since the drive circuit wiring 140 is electrically connected to the drive circuit electrode 142, both the second electrode 132B and the drain electrode 131D of each capacitor 132 are electrically connected to the drive circuit electrode 142. Note that the conductive bonding material used to mount the capacitors 132 is the same as the conductive bonding material SD used to mount the semiconductor laser element 40, for example.

[0219] The plurality of capacitors 132 are arranged at a distance from each other in the X-axis direction. Therefore, the plurality of capacitors 132 are arranged so that the arrangement direction of the plurality of capacitors 132 is the short side direction of the capacitors 132. The plurality of capacitors 132 are distributed and arranged on both sides of the switching element 131 in the X-axis direction.

[0220] Each capacitor 132 is disposed at a position overlapping both the semiconductor laser element 40 and the switching element 131 when viewed from the X-axis direction. More specifically, the first electrode 132A of each capacitor 132 is disposed at a position overlapping with the semiconductor laser element 40 when viewed from the X-axis direction. The second electrode 132B of each capacitor 132 is disposed at a position overlapping with the switching element 131 when viewed from the X-axis direction.

[0221] The first electrode 132A of each capacitor 132 is disposed so as to be shifted toward the switching element 131 with respect to the semiconductor laser element 40. In the example shown, the first electrode 132A of each capacitor 132 is disposed so as to be shifted toward the switching element 131 from the center of the semiconductor laser element 40 in the Y-axis direction.

[0222] In the illustrated example, the plurality of capacitors 132 are arranged symmetrically with respect to the semiconductor laser element 40 and the switching element 131 in a plan view. As a result, a first wiring path in a loop, through which a current flows from the capacitors 132 arranged on one side of the switching element 131 in the X-axis direction to the semiconductor laser element 40 via the switching element 131, and a second wiring path in a loop, through which a current flows from the capacitors 132 arranged on the other side of the switching element 131 in the X-axis direction to the semiconductor laser element 40 via the switching element 131, are formed symmetrically with respect to the semiconductor laser element 40 and the switching element 131.

[0223] As shown in FIG. 32, in the seventh embodiment, the sealing resin 50 seals not only the semiconductor laser element 40 and the first wiring 31, but also the drive circuit element 130 (switching element 131 and capacitor 132), the drive circuit wiring 140, the gate wiring 141G, and the wires WF and WG.

[0224] In the seventh embodiment, the side wall 60 (see FIG. 2) is omitted from the semiconductor laser device 10. As shown in FIG. 30 , in the seventh embodiment, the sealing resin 50 is formed over the entire substrate surface 21. Therefore, the first sealing end face 53 and the first substrate side face 23 are flush with each other, the second sealing end face 54 and the second substrate side face 24 are flush with each other, the third sealing end face 55 and the third substrate side face 25 are flush with each other, and the fourth sealing end face 56 and the fourth substrate side face 26 are flush with each other.

[0225] The size of the sealing resin 50 can be changed as desired. In one example, the sealing resin 50 may be slightly smaller than the substrate 20 in a plan view. In this case, the first to fourth sealing end faces 53 to 56 are located inside the first to fourth substrate side faces 23 to 26.

[0226] [Circuit Configuration of Semiconductor Laser Device] The circuit configuration of the semiconductor laser device 10 of the seventh embodiment will be described with reference to Fig. 33. Fig. 33 shows the circuit configuration of a laser system LS in which the semiconductor laser device 10 is used. As shown in Fig. 33, the laser system LS includes the semiconductor laser device 10, a drive power supply DV, a resistor R, a diode D, and a driver circuit PM. The drive power supply DV, the resistor R, the diode D, and the driver circuit PM are each provided outside the semiconductor laser device 10. The drive power supply DV is, for example, a DC power supply.

[0227] The drain electrode 131D of the switching element 131 and the second electrode 132B of the capacitor 132 are electrically connected to the positive electrode of the drive power supply DV via a resistor R. The source electrode 131S of the switching element 131 is electrically connected to the anode electrode 47 of the semiconductor laser element 40. The source electrode 131S is also electrically connected to the negative electrode of the drive power supply DV. The cathode electrode 48 of the semiconductor laser element 40 is electrically connected to the first electrode 132A of the capacitor 132. This forms a current loop through which current flows in the following order: the first electrode 132A of the capacitor 132, the drain electrode 131D and source electrode 131S of the switching element 131, the anode electrode 47 and cathode electrode 48 of the semiconductor laser element 40, and the second electrode 132B of the capacitor 132.

[0228] A gate electrode 131G of the switching element 131 is electrically connected to a driver circuit PM. The driver circuit PM includes, for example, a square-wave oscillation circuit that generates a pulsed signal, and a gate driver IC (Integrated Circuit) provided between the square-wave oscillation circuit and the semiconductor laser device 10. The gate driver IC generates a control signal for the switching element 131 based on a signal from the square-wave oscillation circuit. A diode D is connected in anti-parallel to the semiconductor laser element 40.

[0229] In this configuration, the semiconductor laser device 10 operates as follows: When the switching element 131 is turned off by a control signal from the driver circuit PM, the capacitor 132 is charged by the drive power supply DV. When the switching element 131 is turned on by the control signal from the driver circuit PM, the capacitor 132 is discharged, causing a current to flow through the semiconductor laser element 40. This causes the semiconductor laser element 40 to emit pulsed laser light.

[0230] [Effects] The semiconductor laser device 10 of the seventh embodiment has the following effects. (7-1) The semiconductor laser device 10 is mounted on the substrate surface 21 and further includes a drive circuit element 130 that drives the semiconductor laser element 40. With this configuration, by providing both the semiconductor laser element 40 and the drive circuit element 130 on the substrate 20, the conductive path between the semiconductor laser element 40 and the drive circuit element 130 can be made shorter than when the drive circuit element 130 is provided outside the semiconductor laser device 10. This makes it possible to reduce parasitic capacitance due to the conductive path between the semiconductor laser element 40 and the drive circuit element 130.

[0231] Eighth Embodiment A semiconductor laser device 10 according to an eighth embodiment will be described with reference to FIGS. 34 to 36. The semiconductor laser device 10 according to the eighth embodiment differs from the semiconductor laser device 10 according to the first embodiment mainly in the configurations of the semiconductor laser element 40 and the sidewall 60. The configurations of the semiconductor laser element 40 and the sidewall 60 will be described in detail below, and components common to the semiconductor laser device 10 according to the first embodiment will be denoted by the same reference numerals and will not be described again. Note that in FIG. 34, the diffusing material 57 in the sealing resin 50 has been omitted to facilitate understanding of the drawing.

[0232] In the semiconductor laser element 40 of the eighth embodiment, for example, the output of the laser light emitted from the first light-emitting surface LS1 and the output of the laser light emitted from the second light-emitting surface LS2 are adjusted to be equal. In one example, the reflectance of the reflective film formed on the first light-emitting surface LS1 and the reflectance of the reflective film formed on the second light-emitting surface LS2 are set to be equal to each other.

[0233] The relationship between the output power of the laser light emitted from the first light-emitting surface LS1 and the output power of the laser light emitted from the second light-emitting surface LS2 can be changed as desired. In one example, the output power of the laser light emitted from the first light-emitting surface LS1 may be greater than the output power of the laser light emitted from the second light-emitting surface LS2. In another example, the output power of the laser light emitted from the second light-emitting surface LS2 may be greater than the output power of the laser light emitted from the first light-emitting surface LS1.

[0234] As shown in FIG. 34 , unlike the first embodiment, the sidewall 60 does not include the second sidewall portion 62 (see FIG. 2 ). That is, the sidewall 60 is composed of a pair of first sidewall portions 61. In other words, the sidewall 60 has an opening that exposes the second sealing end surface 54 of the sealing resin 50. That is, the sidewall 60 has openings that expose the first sealing end surface 53 and the second sealing end surface 54. In the eighth embodiment, as shown in FIG. 35 , the second sealing end surface 54 is flush with the second substrate side surface 24. In the eighth embodiment, the second sealing end surface 54 may be rougher than the sealing surface 51. Therefore, the arithmetic mean roughness of the second sealing end surface 54 may be greater than the arithmetic mean roughness of the sealing surface 51, similar to the first sealing end surface 53. In one example, the second sealing end surface 54 is a dicing surface formed by a dicing process. In this case, cutting marks due to the dicing process are formed on the second sealing end surface 54. As a result, the laser light emitted from the second light emitting surface LS2 is scattered when passing through the second sealing end surface 54, so that the beam angle of the laser light emitted from the semiconductor laser device 10 can be further widened.

[0235] As in the first embodiment, the first laser light emitted from the first light-emitting surface LS1 of the semiconductor laser element 40 is diffused (scattered) by the diffusing material 57. As a result, the first laser light includes laser light directed toward the substrate surface 21. The first extension 31C reflects at least a portion of the laser light directed toward the substrate surface 21. The reflected laser light passes through the first sealing end face 53 or the sealing surface 51 and is emitted to the outside of the semiconductor laser device 10. In this way, it can be said that the semiconductor laser device 10 includes a first reflecting portion 70 that reflects at least a portion of the laser light emitted from the first light-emitting surface LS1 of the semiconductor laser element 40 and directed toward the substrate surface 21. In the eighth embodiment, the first extension 31C of the first wiring 31 constitutes the first reflecting portion 70. In other words, it can be said that the first wiring 31 has a portion that extends from the first light-emitting surface LS1 toward the first sealing end face 53 as the first reflecting portion 70.

[0236] 36 , the second laser light emitted from the second light-emitting surface LS2 of the semiconductor laser element 40 is diffused (scattered) by the diffusing material 57. As a result, the second laser light includes laser light directed toward the substrate surface 21. In the eighth embodiment, the second wiring 32 reflects at least a portion of the laser light directed toward the substrate surface 21. The reflected laser light passes through the second sealing end face 54 or the sealing surface 51 and is emitted to the outside of the semiconductor laser device 10. In this way, it can be said that the semiconductor laser device 10 includes a second reflecting portion 150 that reflects at least a portion of the laser light emitted from the second light-emitting surface LS2 of the semiconductor laser element 40 and directed toward the substrate surface 21. In the eighth embodiment, the second wiring 32 constitutes the second reflecting portion 150.

[0237] Of the two end faces of the second wiring 32 in the Y-axis direction, the position of the end face closer to the second substrate side surface 24 can be changed arbitrarily. In one example, the end face may be located closer to the second substrate side surface 24 in plan view than the position shown in Fig. 34, or may be located at the same position as the second substrate side surface 24. This makes it even easier to reflect the laser light of the second laser light that is directed toward the substrate surface 21.

[0238] [Effects] The semiconductor laser device 10 of the eighth embodiment has the following effects: (8-1) The sealing resin 50 includes a second sealing end face 54 opposite to the first sealing end face 53. The semiconductor laser element 40 includes a second light-emitting surface LS2 that emits laser light toward the second sealing end face 54.

[0239] With this configuration, the semiconductor laser device 10 can emit a first laser beam with a wide beam angle emitted in the +Y direction and a second laser beam with a wide beam angle emitted in the −Y direction, thereby further widening the beam angle of the laser beam emitted from the semiconductor laser device 10.

[0240] (8-2) The semiconductor laser device 10 further includes a second reflecting portion 150 that reflects at least a portion of the laser light that is emitted from the second light-emitting surface LS2 and directed toward the substrate surface 21. The second reflecting portion 150 is provided at a position closer to the second sealing end surface 54 than the second light-emitting surface LS2.

[0241] According to this configuration, the laser light directed from the second light-emitting surface LS2 toward the substrate surface 21 is reflected by the second reflecting portion 150, and the laser light emitted from the second light-emitting surface LS2 is emitted from the second sealed end surface 54 toward a position above the substrate surface 21. Therefore, for example, when the semiconductor laser device 10 is mounted on a circuit board, it is possible to prevent the laser light from being emitted from the second light-emitting surface LS2 toward the surface of the circuit board.

[0242] (8-3) The semiconductor laser device 10 further includes a second wiring 32 that is provided on the substrate 20 and electrically connected to the semiconductor laser element 40 by a wire W. The second wiring 32 is disposed at a position closer to the second sealed end face 54 than the second light-emitting surface LS2 of the semiconductor laser element 40. The second reflector 150 is formed by the second wiring 32.

[0243] According to this configuration, the second reflecting portion 150 can be configured without adding any parts dedicated to the second reflecting portion 150. Therefore, an increase in the number of parts of the semiconductor laser device 10 can be suppressed.

[0244] Ninth Embodiment A semiconductor laser device 10 according to a ninth embodiment will be described with reference to FIGS. 37 to 42. The semiconductor laser device 10 according to the ninth embodiment differs from the semiconductor laser device 10 according to the first embodiment mainly in the configuration of the substrate. The configuration of the substrate 20 will be described in detail below, and components common to those of the semiconductor laser device 10 according to the first embodiment will be denoted by the same reference numerals and will not be described again. Note that in FIG. 37, the diffusing material 57 in the sealing resin 50 has been omitted to make the drawing easier to understand.

[0245] 37 , the semiconductor laser device 10 includes a substrate 160 in place of the substrate 20, the first wiring 31, the second wiring 32, the first electrode 33, the second electrode 34, the first via 35, and the second via 36 (all of which are shown in FIG. 1 ). The substrate 160 is configured as a component that supports the semiconductor laser element 40. The substrate 160 includes an insulating substrate 160A formed of, for example, black epoxy resin. The insulating substrate 160A can be formed of a heat-resistant material such as engineering plastic.

[0246] The ninth embodiment differs from the first embodiment in that the wiring such as the first wiring 31 (see FIG. 2 ) is formed on the substrate surface 21 (see FIG. 2 ), and the external electrodes such as the first electrode 33 (see FIG. 4 ) are formed on the substrate back surface 22 (see FIG. 4 ). Instead of the wiring and external electrodes, the substrate 160 includes a first conductive portion 180 and a second conductive portion 190 formed from a conductive material. The first conductive portion 180 and the second conductive portion 190 are formed, for example, by a metal frame. In one example, the first conductive portion 180 and the second conductive portion 190 are formed by a copper frame. A plating film may be provided on the surface of the frame configured as the first conductive portion 180 and the second conductive portion 190. Examples of plating films include Ag plating and Ni / Pd / Au plating. The first conductive portion 180 and the second conductive portion 190 are provided on an insulating substrate 160A. Thus, the substrate 160 of the ninth embodiment includes a first conductive portion 180, a second conductive portion 190, and an insulating substrate 160A.

[0247] In a plan view, the substrate 160 has a rectangular outer shape with the X-axis direction as its short side and the Y-axis direction as its long side. The substrate 160 has a substrate front surface 161 and a substrate back surface 162 facing opposite sides in the Z-axis direction, and first to fourth substrate side surfaces 163 to 166 connecting the substrate front surface 161 and the substrate back surface 162. The first substrate side surface 163 and the second substrate side surface 164 constitute both end surfaces of the substrate 160 in the Y-axis direction. In a plan view, the first substrate side surface 163 and the second substrate side surface 164 each extend in the X-axis direction. The third substrate side surface 165 and the fourth substrate side surface 166 constitute both end surfaces of the substrate 160 in the X-axis direction. In a plan view, the third substrate side surface 165 and the fourth substrate side surface 166 each extend in the Y-axis direction.

[0248] Insulating substrate 160A holds both first conductive portion 180 and second conductive portion 190. Insulating substrate 160A is integrally formed with first conductive portion 180 and second conductive portion 190 by resin molding. In other words, insulating substrate 160A is a molded resin that holds both first conductive portion 180 and second conductive portion 190.

[0249] The insulating substrate 160A has a bottom wall portion 171 and a side wall portion 172. In the ninth embodiment, the bottom wall portion 171 and the side wall portion 172 are integrally formed. The bottom wall portion 171 is formed in a flat plate shape with its thickness direction in the Z-axis direction. In other words, the Z-axis direction can also be said to be the thickness direction of the substrate 160. The bottom wall portion 171 has a substrate front surface 161 and a substrate back surface 162. The substrate front surface 161 is configured as the surface of the bottom wall portion 171 facing in the +Z direction. The substrate back surface 162 is configured as the surface of the bottom wall portion 171 facing in the -Z direction.

[0250] 38, a first conductive portion 180 and a second conductive portion 190 are provided on the bottom wall portion 171. The first conductive portion 180 and the second conductive portion 190 penetrate the bottom wall portion 171 in the Z-axis direction.

[0251] The sidewall portion 172 is provided on the bottom wall portion 171. As shown in FIG. 37 , the sidewall portion 172 surrounds the semiconductor laser element 40 in a plan view. The sidewall portion 172 has a pair of first sidewall portions 172A spaced apart from each other and a second sidewall portion 172B connecting the pair of first sidewall portions 172A. In the ninth embodiment, the pair of first sidewall portions 172A and the second sidewall portion 172B are integrally formed. The pair of first sidewall portions 172A are arranged spaced apart from each other in the X-axis direction. In a plan view, each first sidewall portion 172A extends in the Y-axis direction, i.e., the longitudinal direction of the substrate 160. In a plan view, the second sidewall portion 172B extends in the X-axis direction, i.e., the lateral direction of the substrate 160. The second side wall portion 172B is disposed closer to the second substrate side surface 164 of the substrate 160 than the semiconductor laser element 40. In this manner, the insulating substrate 160A of the ninth embodiment has a configuration in which a portion corresponding to the substrate 20 (see FIG. 5) of the first embodiment and a portion corresponding to the side wall 60 (see FIG. 5) are integrated together.

[0252] 38 , the first conductive portion 180 provided on the bottom wall portion 171 has a first conductive front surface 181 and a first conductive back surface 182 that face opposite each other in the Z-axis direction. The first conductive surface 181 faces the same side as the substrate front surface 161, and the first conductive back surface 182 faces the same side as the substrate back surface 162. The first conductive surface 181 is exposed from the bottom wall portion 171 and, in the example shown, is formed so as to be flush with the substrate front surface 161. The first conductive back surface 182 is exposed from the bottom wall portion 171 and, in the example shown, is formed so as to be flush with the substrate back surface 162. Here, in the ninth embodiment, the first conductive surface 181 corresponds to the "conductive surface."

[0253] As shown in FIG. 37 , the first conductive part 180 includes a first mounting part 183 and a plurality of (e.g., three) first suspension lead parts 184 extending from side edges of the first mounting part 183. Both edges of the first mounting part 183 in the X-axis direction are positioned to overlap with the side wall part 172 of the substrate 160 in a plan view. The first mounting part 183 is a part of the first conductive part 180 exposed from the substrate front surface 161 and corresponds to the first wiring in the first embodiment. Therefore, it can be said that the first conductive part 180 includes the first wiring. The first conductive back surface 182 exposed from the substrate back surface 162 corresponds to the first electrode in the first embodiment. Therefore, it can be said that the first conductive part 180 includes the first electrode.

[0254] The semiconductor laser element 40 is mounted on the first mounting portion 183 (first conductive surface 181) of the first conductive portion 180. More specifically, the semiconductor laser element 40 is bonded to the surface of the first conductive surface 181 of the first mounting portion 183 that is exposed from the bottom wall portion 171 by a conductive bonding material SD. Therefore, it can be said that the semiconductor laser element 40 is mounted on the first conductive portion 180 (first mounting portion 183).

[0255] The three first suspension lead portions 184 extend from a side edge portion of the first mounting portion 183 on the first substrate side surface 163 side, a side edge portion of the first mounting portion 183 on the third substrate side surface 165 side, and a side edge portion of the first mounting portion 183 on the fourth substrate side surface 166 side. Therefore, the three first suspension lead portions 184 are exposed from the first substrate side surface 163, the third substrate side surface 165, and the fourth substrate side surface 166. The first suspension lead portions 184 extending from the side edge portion of the first mounting portion 183 on the first substrate side surface 163 side are also exposed from the substrate surface 161 of the bottom wall portion 171. On the other hand, the first suspension lead portions 184 extending from the side edge portions on the third substrate side surface 165 and the fourth substrate side surface 166 side are provided at positions overlapping with the side wall portions 172 in a plan view.

[0256] The second conductive portion 190 is disposed closer to the second substrate side surface 164 than the first conductive portion 180. As shown in FIG. 38 , the second conductive portion 190 has a second conductive front surface 191 and a second conductive back surface 192 that face opposite each other in the Z-axis direction. The second conductive surface 191 faces the same side as the substrate front surface 161, and the second conductive back surface 192 faces the same side as the substrate back surface 162. The second conductive front surface 191 is exposed from the bottom wall portion 171 and, in the illustrated example, is formed so as to be flush with the substrate front surface 161. The second conductive back surface 192 is exposed from the bottom wall portion 171 and, in the illustrated example, is formed so as to be flush with the substrate back surface 162.

[0257] In this way, substrate surface 161 of substrate 160 includes the insulating substrate surface of insulating substrate 160A, first conductive surface 181 of first conductive portion 180, and second conductive surface 191 of second conductive portion 190. The insulating substrate surface is the surface of bottom wall portion 171 of insulating substrate 160A that faces the same side as substrate surface 161.

[0258] Furthermore, substrate back surface 162 of substrate 160 includes the insulating substrate back surface of insulating substrate 160A, first conductive back surface 182 of first conductive portion 180, and second conductive back surface 192 of second conductive portion 190. The insulating substrate back surface is the surface of bottom wall portion 171 of insulating substrate 160A that faces the same side as substrate back surface 162.

[0259] As shown in FIG. 37 , the second conductive portion 190 includes a second mounting portion 193 and multiple (e.g., three) second suspension lead portions 194 extending from side edges of the second mounting portion 193. Both edges of the second mounting portion 193 in the X-axis direction are positioned to overlap the side wall portion 172 of the substrate 160 in a plan view. The second mounting portion 193 is a portion of the second conductive portion 190 exposed from the substrate front surface 161 and corresponds to the second wiring in the first embodiment. Therefore, it can be said that the second conductive portion 190 includes the second wiring. The second conductive back surface 192 exposed from the substrate back surface 162 corresponds to the second electrode in the first embodiment. Therefore, it can be said that the second conductive portion 190 includes the second electrode.

[0260] The anode electrode 47 of the semiconductor laser element 40 is electrically connected to the second mounting portion 193 by a wire W. More specifically, the wire W connected to the anode electrode 47 is joined to the surface of the second conductive surface 191 of the second mounting portion 193 that is exposed from the bottom wall portion 171. The wire W is made of, for example, the same material as the wire W in the first embodiment.

[0261] The three second suspension lead portions 194 extend from a side edge portion of the second mounting portion 193 on the second board side surface 164 side, a side edge portion on the third board side surface 165 side, and a side edge portion on the fourth board side surface 166 side. Therefore, the three second suspension lead portions 194 are exposed from the second board side surface 164, the third board side surface 165, and the fourth board side surface 166. The second suspension lead portions 194 extending from the side edge portions on the second board side surface 164, the third board side surface 165, and the fourth board side surface 166 side are provided at positions overlapping with the side wall portion 172 in a plan view.

[0262] The semiconductor laser element 40 is sealed with sealing resin 50. The sealing resin 50 is provided in a space surrounded by a bottom wall 171 and a side wall 172. Therefore, a second sealing end surface 54 of the sealing resin 50 contacts the second side wall 172B, and both a third sealing end surface 55 and a fourth sealing end surface 56 contact the pair of first side wall portions 172A. Meanwhile, the first sealing end surface 53 is exposed from the side wall portions 172. In the illustrated example, the first sealing end surface 53 is formed so as to be flush with the first substrate side surface 163. Furthermore, a diffusing material 57 is mixed into the sealing resin 50, as in the first embodiment.

[0263] 37 , in a plan view, the area of ​​the portion of the first mounting portion 183 exposed from the bottom wall portion 171 is larger than the area of ​​the semiconductor laser element 40. More specifically, the length of the first mounting portion 183 in the X-axis direction is longer than the length of the semiconductor laser element 40 in the X-axis direction, and the length of the first mounting portion 183 in the Y-axis direction is longer than the length of the semiconductor laser element 40 in the Y-axis direction.

[0264] The semiconductor laser element 40 is disposed in a portion of the first mounting portion 183 closer to the second mounting portion 193 (second substrate side surface 164). More specifically, the center of the semiconductor laser element 40 in the Y-axis direction is located closer to the second mounting portion 193 (second substrate side surface 164) than the center of the first mounting portion 183 in the Y-axis direction.

[0265] The first mounting portion 183 includes a first end face 183A and a second end face 183B that constitute both ends of the first mounting portion 183 in the Y-axis direction. The first end face 183A is the end face closer to the first substrate side face 163 of both ends of the first mounting portion 183, and the second end face 183B is the end face closer to the second substrate side face 164 of both ends of the first mounting portion 183. In the ninth embodiment, the first end face 183A is located more inward than the first substrate side face 163 (closer to the second substrate side face 164). In a plan view, the first end face 183A is located closer to the first substrate side face 163 than the center in the Y-axis direction between the first substrate side face 163 and the first element side face 43 (first light-emitting surface LS1) of the semiconductor laser element 40.

[0266] In a plan view, the length of the first mounting portion 183 in the Y-axis direction is longer than the length of the semiconductor laser element 40 in the Y-axis direction. Therefore, the first mounting portion 183 includes a first extending portion 183C that is a portion between the first light-emitting surface LS1 and the first end face 183A of the semiconductor laser element 40, and a second extending portion 183D that is a portion between the second light-emitting surface LS2 and the second end face 183B. In this way, it can be said that the first mounting portion 183 (first conductive surface 181) has the first extending portion 183C that is a portion extending from the first element side surface 43 (first light-emitting surface LS1) of the semiconductor laser element 40 toward the first sealed end face 53. The first extending portion 183C includes the first end face 183A. The second extending portion 183D includes the second end face 183B.

[0267] A distance DA1 between the first element side surface 43 (first light-emitting surface LS1) of the semiconductor laser element 40 and the first end face 183A of the first mounting portion 183 in the Y-axis direction is larger than a distance DA2 between the second element side surface 44 of the semiconductor laser element 40 and the second end face 183B of the first mounting portion 183. Here, the distance DA1 can also be said to be the length of the first extension portion 183C in the Y-axis direction, and the distance DA2 can also be said to be the length of the second extension portion 183D in the Y-axis direction.

[0268] As in the first embodiment, the first light-emitting surface LS1 of the semiconductor laser element 40 faces the same side as the first sealing end surface 53. The laser light emitted from the first light-emitting surface LS1 of the semiconductor laser element 40 is diffused (scattered) by the diffusing material 57. As a result, the laser light includes laser light directed toward the substrate surface 161. The first extension 183C reflects at least a portion of the laser light directed toward the substrate surface 161. The reflected laser light passes through the first sealing end surface 53 or the sealing surface 51 and is emitted to the outside of the semiconductor laser device 10. In this way, it can be said that the semiconductor laser device 10 includes a first reflecting portion 70 that reflects at least a portion of the laser light emitted from the first light-emitting surface LS1 of the semiconductor laser element 40 and directed toward the substrate surface 161. In the ninth embodiment, the first extension 183C of the first mounting portion 183 constitutes the first reflecting portion 70. In other words, it can be said that the first mounting portion 183 has a portion that extends from the first light-emitting surface LS1 toward the first sealed end surface 53 as the first reflecting portion 70 .

[0269] [Method for Manufacturing Semiconductor Laser Device] An example of a method for manufacturing the semiconductor laser device 10 of the ninth embodiment will be described with reference to Figures 39 to 42. Note that, for convenience, Figures 39 to 42 show a configuration in which four semiconductor laser devices 10 can be manufactured at once, but the present invention is not limited to this, and a configuration in which more semiconductor laser devices 10 can be manufactured at once may also be used.

[0270] The manufacturing method of the semiconductor laser device 10 includes the steps of preparing a lead frame 980, forming an insulating substrate 960, mounting a semiconductor laser element 40, forming a wire W, forming a sealing resin 950, and singulating.

[0271] 39 , in the step of preparing a lead frame 980, the lead frame 980 is prepared, which includes a plurality of first conductive parts 180 and a plurality of second conductive parts 190. The lead frame 980 is formed of a material containing, for example, Cu.

[0272] The lead frame 980 includes a plurality of first conductive parts 180 and a plurality of second conductive parts 190. Two first conductive parts 180 adjacent to each other in the X-axis direction are connected to each other by a first suspension lead part 184. Two second conductive parts 190 adjacent to each other in the X-axis direction are connected to each other by a second suspension lead part 194. Two first conductive parts 180 and two second conductive parts 190 adjacent to each other in the Y-axis direction are connected to each other by the first suspension lead part 184 and the second suspension lead part 194. Although not shown, the lead frame 980 has a frame part. The multiple first conductive parts 180 and the multiple second conductive parts 190 are connected to each other by this frame part.

[0273] As shown in FIG. 40 , in the process of forming the insulating substrate 960, the insulating substrate 960 is formed by resin molding so as to be integrated with the lead frame 980. The insulating substrate 960 supports the lead frame 980. The insulating substrate 960 is formed to a size that includes multiple substrates 160 (insulating substrates 160A). The insulating substrate 960 is made of, for example, black epoxy resin. The insulating substrate 960 includes multiple bottom wall portions 971 and multiple side wall portions 972. The number of each of the bottom wall portions 971 and side wall portions 972 is set according to the number of substrates 160 (insulating substrates 160A) in the insulating substrate 960. In the insulating substrate 960, unit side walls are formed by side wall portions 972 that are adjacent in a plan view, surrounding the first mounting portion 183 and the second mounting portion 193.

[0274] 41 , in the ninth embodiment, the step of mounting the semiconductor laser element 40 is a step of mounting the semiconductor laser element 40 on the first mounting portion 183 of the first conductive portion 180. In this step, the semiconductor laser element 40 is, for example, die-bonded to the first mounting portion 183 of the first conductive portion 180. This electrically connects the cathode electrode 48 of the semiconductor laser element 40 and the first conductive portion 180.

[0275] Subsequently, in the process of forming the wire W, the wire W is formed to electrically connect the anode electrode 47 of the semiconductor laser element 40 and the second mounting portion 193 of the second conductive portion 190. The wire W is a bonding wire formed by a wire bonding apparatus. Here, in the ninth embodiment, the side of the wire W that is connected to the second mounting portion 193 is the first bonding, and the side of the wire W that is connected to the anode electrode 47 of the semiconductor laser element 40 is the second bonding.

[0276] 42 , in the step of forming the sealing resin 950, the sealing resin 950 is formed in a space surrounded by the insulating substrate 960 and a unit side wall formed by a plurality of side wall portions 972. It can be said that the side wall portions 972 (unit side walls) surround the sealing resin 950.

[0277] The sealing resin 950 is formed by, for example, resin molding. The sealing resin 950 seals the first mounting portion 183, the second mounting portion 193, the semiconductor laser element 40, and the wires W. The sealing resin 950 is formed of a light-transmitting material. In one example, the sealing resin 950 is formed of a material including at least one of a silicone resin, an epoxy resin, and an acrylic resin. Here, the sealing resin 950 is formed by, for example, transfer molding or compression molding. The sealing resin 950 may be filled into the space surrounded by the bottom wall portion 971 of the insulating substrate 960 and the unit side walls of the side wall portion 972 by potting. The sealing resin 950 includes a diffusion material 57 (see FIG. 42 ).

[0278] Subsequently, in the singulation process, both the side wall portion 972 and the bottom wall portion 971 are cut with a dicing blade along the cutting lines CL in FIG. 41 . This forms the substrate 160 and the sealing resin 50. The semiconductor laser element 40 is mounted on the first wiring 31 so that the first light-emitting surface LS1 that emits laser light emits laser light toward the first sealing end surface 53 of the sealing resin 50. In other words, the semiconductor laser element 40 is mounted on the first wiring 31 so that the first light-emitting surface LS1 faces the same side as the first sealing end surface 53. Through the above processes, the semiconductor laser device 10 is manufactured.

[0279] [Effects] The semiconductor laser device 10 of the ninth embodiment has the following effects. (9-1) The semiconductor laser device 10 includes a first conductive portion 180. The insulating substrate 160A is a molded resin that holds the first conductive portion 180. The insulating substrate 160A is integrally formed with a bottom wall portion 171 that holds the first conductive portion 180 and a side wall portion 172 that rises from the bottom wall portion 171 and surrounds the sealing resin 50 in a plan view.

[0280] According to this configuration, the manufacturing steps for the insulating substrate 160A can be reduced compared to a configuration in which the bottom wall portion 171 and the side wall portion 172 are formed separately and then joined together, thereby making it easier to manufacture the substrate 160.

[0281] (9-2) The first conductive surface 181 (first mounting portion 183) of the first conductive portion 180 has a portion that extends from the first light-emitting surface LS1 of the semiconductor laser element 40 toward the first sealing end surface 53 of the sealing resin 50 as the first reflecting portion 70.

[0282] According to this configuration, the first reflector 70 can be formed using the first conductive part 180, without adding any parts dedicated to the first reflector 70. Therefore, an increase in the number of parts of the semiconductor laser device 10 can be suppressed.

[0283] Tenth Embodiment A semiconductor laser device 10 according to a tenth embodiment will be described with reference to FIGS. 43 to 45. The semiconductor laser device 10 according to the tenth embodiment differs from the semiconductor laser device 10 according to the first embodiment in that a submount substrate is interposed between the semiconductor laser element 40 and the first wiring 31. Differences from the first embodiment will be described in detail below, and components common to the semiconductor laser device 10 according to the first embodiment will be denoted by the same reference numerals and will not be described again. Note that in FIG. 43, the diffusing material 57 in the sealing resin 50 has been omitted to make the drawing easier to understand.

[0284] 43 , a submount substrate 200 is interposed between the semiconductor laser element 40 and the first wiring 31. The submount substrate 200 electrically connects the semiconductor laser element 40 and the first wiring 31. More specifically, the submount substrate 200 electrically connects the cathode electrode 48 of the semiconductor laser element 40 and the first wiring 31.

[0285] The submount substrate 200 is formed of a material having a thermal expansion coefficient closer to that of the semiconductor laser element 40 than that of the first wiring 31, for example. In other words, the difference in thermal expansion coefficient between the submount substrate 200 and the semiconductor laser element 40 is smaller than the difference in thermal expansion coefficient between the first wiring 31 and the semiconductor laser element 40. For example, since the semiconductor laser element 40 is formed of a Si substrate, the thermal expansion coefficient is 2.6×10 －６ / K. Since the first wiring 31 is made of a material containing copper, the thermal expansion coefficient is about 16.5×10 －６ / K. Therefore, the submount substrate 200 has a thermal expansion coefficient of 16.5×10 －６ / K. In one example, the submount substrate 200 is made of alumina. In this case, the thermal expansion coefficient of the submount substrate 200 is 7.2×10 －６ / K. The submount substrate 200 may be made of aluminum nitride. In this case, the thermal expansion coefficient of the submount substrate 200 is about 4.6×10 －６ / K.

[0286] The submount substrate 200 is formed in a flat plate shape with its thickness direction in the Z-axis direction. The shape of the submount substrate 200 in plan view is rectangular with its longitudinal direction in the Y-axis direction and its lateral direction in the X-axis direction. In the tenth embodiment, the submount substrate 200 is formed to be slightly larger than the semiconductor laser element 40 in plan view.

[0287] As shown in Figures 44 and 45, the submount substrate 200 has a front surface 201, a back surface 202, and first to fourth side surfaces 203 to 206 connecting the front surface 201 and the back surface 202. The front surface 201 faces the same side as the substrate front surface 21, and the back surface 202 faces the same side as the substrate back surface 22. The back surface 202 faces the first wiring 31. The first to fourth side surfaces 203 to 206 are surfaces that intersect with both the front surface 201 and the back surface 202. In the tenth embodiment, each of the first to fourth side surfaces 203 to 206 is a surface that is perpendicular to the front surface 201 and the back surface 202. The first side surface 203 and the second side surface 204 constitute both end surfaces of the submount substrate 200 in the Y-axis direction. The first side surface 203 faces the same side as the first substrate side surface 23, and the second side surface 204 faces the same side as the second substrate side surface 24. The third side surface 205 and the fourth side surface 206 constitute both end surfaces in the X-axis direction of the submount substrate 200. The third side surface 205 faces the same side as the third substrate side surface 25, and the fourth side surface 206 faces the same side as the fourth substrate side surface 26.

[0288] The semiconductor laser device 10 includes a surface-side wiring 207 provided on the surface 201 of the submount substrate 200, a back-side wiring 208 provided on the back surface 202, and a via 209 connecting the surface-side wiring 207 and the back-side wiring 208. Each of the surface-side wiring 207 and the back-side wiring 208 is formed of a material containing, for example, copper. The via 209 is formed of a material containing, for example, Cu.

[0289] As shown in Fig. 44 , the front surface side wiring 207 is formed in a rectangular shape that is slightly smaller than the submount substrate 200 in a plan view. As shown in Fig. 45 , the back surface side wiring 208 is formed in a rectangular shape that is the same size as the front surface side wiring 207 in a plan view. In the tenth embodiment, the front surface side wiring 207 is formed on the front surface 201 of the submount substrate 200. As shown in Fig. 44 , for example, a plurality of vias 209 (eight in the tenth embodiment) are provided. The vias 209 are formed in two rows spaced apart in the X axis direction, each row consisting of four vias 209 arranged in a row spaced apart from each other in the Y axis direction.

[0290] The shape and size of each of the front-side wiring 207 and the back-side wiring 208 can be changed arbitrarily. In one example, the area of ​​the front-side wiring 207 and the area of ​​the back-side wiring 208 can be different from each other in a plan view. Furthermore, the number of vias 209 can be changed arbitrarily.

[0291] The submount substrate 200 is bonded to the first wiring 31 by a conductive bonding material SD. That is, the submount substrate 200 is mounted on the first wiring 31. In the tenth embodiment, the submount substrate 200 is disposed closer to the second end face 31B of the first wiring 31 in the Y-axis direction. In other words, as shown in FIG. 44 , the distance DB1 between the submount substrate 200 and the first end face 31A of the first wiring 31 in the Y-axis direction is greater than the distance DB2 between the submount substrate 200 and the second end face 31B of the first wiring 31 in the Y-axis direction.

[0292] 45 , the semiconductor laser element 40 is mounted on a submount substrate 200. More specifically, the cathode electrode 48 of the semiconductor laser element 40 is bonded to a front-side wiring 207 of the submount substrate 200 by a conductive bonding material SD. This electrically connects the cathode electrode 48 to the front-side wiring 207. Since the front-side wiring 207 is electrically connected to the back-side wiring 208 through a via 209, the cathode electrode 48 is electrically connected to the back-side wiring 208. Since the back-side wiring 208 is electrically connected to the first wiring 31 by the conductive bonding material SD, the cathode electrode 48 is electrically connected to the first wiring 31. In the tenth embodiment, the semiconductor laser element 40 is disposed at the center of the submount substrate 200 in the Y-axis direction.

[0293] The submount substrate 200, the semiconductor laser element 40, and the wires W are sealed with a sealing resin 50. A first side surface 203 of the submount substrate 200 is disposed inside (closer to the semiconductor laser element 40) than a first sealing end surface 53 of the sealing resin 50.

[0294] In the tenth embodiment, the semiconductor laser device 10 does not include the first reflector 70 (see FIG. 5 ). That is, the laser light emitted from the first light-emitting surface LS1 of the semiconductor laser element 40 is emitted from the first sealing end face 53 and the sealing surface 51 via the sealing resin 50.

[0295] [Effects] The semiconductor laser device 10 of the tenth embodiment has the following effects: (10-1) The semiconductor laser device 10 further includes a submount substrate 200 that is interposed between the first wiring 31 and the semiconductor laser element 40 and electrically connects the first wiring 31 and the semiconductor laser element 40. The submount substrate 200 is made of a material that has a thermal expansion coefficient closer to that of the semiconductor laser element 40 than that of the first wiring 31.

[0296] This configuration can reduce the force applied to the semiconductor laser element 40 due to the difference in thermal expansion coefficient between the first wiring 31 and the semiconductor laser element 40. Therefore, it is possible to reduce the influence on the electrical characteristics of the semiconductor laser element 40 due to temperature changes.

[0297] (10-2) The distance DB1 between the submount substrate 200 and the first end face 31A of the first wiring 31 in the Y-axis direction is greater than the distance DB2 between the submount substrate 200 and the second end face 31B of the first wiring 31 in the Y-axis direction.

[0298] According to this configuration, the semiconductor laser element 40 can be further spaced away from the first sealing end face 53. Therefore, the laser light emitted from the first light-emitting surface LS1 of the semiconductor laser element 40 is more likely to be diffused (scattered) by the diffusing material 57 within the sealing resin 50. Therefore, the beam angle of the laser light emitted from the semiconductor laser device 10 can be further widened.

[0299] <Modifications> The above-described embodiments can be modified as follows. Furthermore, the above-described embodiments and the following modifications can be combined with each other to the extent that no technical contradiction occurs. In the planar structure of the semiconductor laser device 10 in the following modifications, the diffusing material 57 in the sealing resin 50 is omitted to make the drawings easier to understand.

[0300] Combinations of the First to Tenth Embodiments The first side electrode 37 and the second side electrode 38 of the third embodiment may be added to the second and fourth to tenth embodiments. When the first side electrode 37 is added to the fourth embodiment, the first side electrode 37 and the first end face through hole 39A are connected to each other. When the second side electrode 38 is added to the fourth embodiment, the second side electrode 38 and the second end face through hole 39B are connected to each other. When the first side electrode 37 and the second side electrode 38 are added to the seventh embodiment, the second side electrode 38 may be formed on at least one of the third substrate side face 25 and the fourth substrate side face 26, for example, in continuation with the drive circuit electrode 142. Furthermore, in the seventh embodiment, the semiconductor laser device 10 may further include a gate side electrode formed on the second substrate side face 24 in continuation with the gate electrode 143G.

[0301] At least one of the first end face through hole 39A and the second end face through hole 39B of the fourth embodiment may be added to the second and fifth to tenth embodiments. When the first end face through hole 39A is added to the second embodiment, a reflector 80 may be disposed on the first end face through hole 39A. In this case, the resist 90 may be omitted. When the first end face through hole 39A is added to the eighth embodiment, the first end face through hole 39A may be provided on at least one of the first board side surface 23 and the second board side surface 24.

[0302] The drive circuit element 130, drive circuit wiring 140, gate wiring 141G, source wiring 141S, drive circuit electrode 142, gate electrode 143G, and source electrode 143S of the seventh embodiment may be added to the second, fifth, sixth, and eighth to tenth embodiments. In this case, the semiconductor laser device 10 may include, for example, a drive circuit via 144 as a configuration electrically connecting the drive circuit wiring 140 and the drive circuit electrode 142. The semiconductor laser device 10 may include, for example, a gate via 145G as a configuration electrically connecting the gate wiring 141G and the gate electrode 143G. The semiconductor laser device 10 may include, for example, a source via 145S as a configuration electrically connecting the source wiring 141S and the source electrode 143S.

[0303] The photodiode 110, the third wiring 100, and the third electrode 101 of the fifth embodiment may be added to the sixth to ninth embodiments. In this case, the semiconductor laser device 10 may include a via 102 as a configuration for electrically connecting the third wiring 100 and the third electrode 101.

[0304] The semiconductor laser element 120 of the sixth embodiment may be applied instead of the semiconductor laser elements 40 of the seventh to tenth embodiments. The configuration of the sidewall 60 of the eighth embodiment may be applied to the ninth and tenth embodiments. That is, in the ninth embodiment, the second sidewall portion 172B may be omitted from the sidewall portion 172.

[0305] The submount substrate 200 of the tenth embodiment may be applied to the ninth embodiment. In this case, the submount substrate 200 is bonded to the first mounting portion 183 by the conductive bonding material SD. The semiconductor laser element 40 is bonded to the submount substrate 200 by the conductive bonding material SD.

[0306] [Modification of First Reflector] In the first embodiment, the configuration of the first reflector 70 can be modified as desired. For example, as shown in FIG. 46 , a reflective film 210 may be formed on the substrate surface 21 as the first reflector 70. That is, it can be said that the semiconductor laser device 10 includes the reflective film 210 formed on the substrate surface 21 as the first reflector 70. The reflective film 210 is disposed on the substrate surface 21 closer to the first substrate side surface 23 than the first interconnect 31. The reflective film 210 is disposed spaced apart from the first interconnect 31 in the Y-axis direction. The reflective film 210 may be formed of a material containing copper, similar to the first interconnect 31, or may be formed of a material (e.g., Al) different from the material of the first interconnect 31. The reflective film 210 may be in an electrically floating state, for example.

[0307] When the reflective film 210 is provided, the length in the Y-axis direction of the first extension portion 31C of the first wiring 31 is shorter than the length in the Y-axis direction of the first extension portion 31C of the first embodiment. In addition, the first extension portion 31C may be omitted.

[0308] In the illustrated example, the thickness of the reflective film 210 is equal to the thickness of the first wiring 31. The thickness of the reflective film 210 can be changed arbitrarily, and may be thicker than the thickness of the first wiring 31, for example.

[0309] In the illustrated example, the length of the reflective film 210 in the X-axis direction is equal to the length of the first wiring 31 in the X-axis direction. The length of the reflective film 210 in the X-axis direction can be changed as desired. The length of the reflective film 210 in the X-axis direction may be longer than the length of the first wiring 31 in the X-axis direction. The length of the reflective film 210 in the X-axis direction may also be shorter than the length of the first wiring 31 in the X-axis direction. When the length of the reflective film 210 in the X-axis direction is shorter than the length of the first wiring 31 in the X-axis direction, for example, it is preferable that the length of the reflective film 210 in the X-axis direction be equal to or longer than the length of the semiconductor laser element 40 in the X-axis direction.

[0310] In the second embodiment, the position of the reflector 80 can be changed as desired. For example, as shown in FIG. 47 , the reflector 80 may be disposed, in a plan view, between the first light-emitting surface LS1 of the semiconductor laser element 40 and the first substrate side surface 23 of the substrate 20 in the Y-axis direction. The reflector 80 may be disposed, in a plan view, between the first light-emitting surface LS1 and the first sealing end surface 53 of the sealing resin 50 in the Y-axis direction. In other words, the entire reflector 80 may be sealed by the sealing resin 50.

[0311] Although not shown, the reflector 80 may be disposed so that a portion thereof protrudes from the first substrate side surface 23. The reflector 80 may be disposed so that a portion thereof protrudes from the first sealed end surface 53.

[0312] The height dimension of the reflector 80 (the size of the reflector 80 in the Z-axis direction) can be changed as desired. For example, the height dimension of the reflector 80 may be smaller than the thickness of the semiconductor laser element 40 (the size of the semiconductor laser element 40 in the Z-axis direction).

[0313] In the ninth embodiment, as shown in FIG. 48 , the substrate 160 may have a reflector portion 173. In this case, the reflector portion 173 is formed on the bottom wall portion 171. The reflector portion 173 may be formed integrally with the bottom wall portion 171. The reflector portion 173 is formed of, for example, black epoxy resin, similar to the bottom wall portion 171. The reflector portion 173 has an inclined surface 173A. The inclined surface 173A is inclined upward as it approaches the first substrate side surface 23. A reflective film 174 is formed on the inclined surface 173A. The reflective film 174 is formed of, for example, a metal film. Examples of the metal film include a Cu film and an Al film. Note that, instead of a metal film, a highly reflective resist may be used for the reflective film 174. For example, a white resist may be used as the highly reflective resist.

[0314] In the ninth embodiment, the reflector 80 may be configured to be integrated with the first mounting portion 183. That is, in the method for manufacturing the semiconductor laser device 10, in the step of preparing the lead frame 980, the reflector 80 may be formed integrally with the lead frame 980. More specifically, the reflector 80 is formed integrally with each first conductive portion 180.

[0315] In the tenth embodiment, as shown in FIG. 49 , the length of the submount substrate 200 in the Y-axis direction may be increased. In this case, the semiconductor laser element 40 is disposed closer to the second side surface 204 of the submount substrate 200 in a planar view. That is, in a planar view, the distance in the Y-axis direction between the first light-emitting surface LS1 of the semiconductor laser element 40 and the first side surface 203 of the submount substrate 200 is greater than the distance in the Y-axis direction between the second element side surface 44 (second light-emitting surface LS2) of the semiconductor laser element 40 and the second side surface 204 of the submount substrate 200. This allows the front-side wiring 207 to have a long first extension portion 207A extending from the first light-emitting surface LS1 to the first side surface 203 in a planar view. In the modified example shown in FIG. 49 , the first extension portion 207A constitutes the first reflector 70. In other words, the front-side wiring 207 has, as the first reflecting portion 70, a portion (first extending portion 207A) extending from the first light-emitting surface LS1 toward the first sealed end surface 53. Here, the front-side wiring 207 corresponds to the "connecting wiring."

[0316] In the tenth embodiment, the semiconductor laser device 10 may include a reflector 80 as the first reflecting portion 70. The reflector 80 may be mounted on, for example, the surface 201 of the submount substrate 200. The reflector 80 may also be mounted on, for example, the surface-side wiring 207 of the submount substrate 200.

[0317] In the tenth embodiment, the semiconductor laser device 10 may include a reflective film formed on the surface 201 of the submount substrate 200 as the first reflector 70. The reflective film is formed of a metal film such as a Cu film or an Al film. The reflective film is disposed, for example, closer to the first side surface 203 than the surface-side wiring 207. The reflective film is, for example, in an electrically floating state.

[0318] In the first embodiment, the first reflecting portion 70 may be omitted from the semiconductor laser device 10. More specifically, the first extending portion 31C of the first wiring 31 may be formed so that the laser light from the semiconductor laser element 40 that is directed toward the substrate surface 21 does not hit the first extending portion 31C. Alternatively, the first extending portion 31C may be omitted from the first wiring 31. In this case, the laser light from the semiconductor laser element 40 that is directed toward the substrate surface 21 may be emitted from the first sealing end surface 53 of the sealing resin 50 without being reflected by the substrate surface 21.

[0319] [Modification of the Second Reflecting Portion] In the eighth embodiment, as shown in FIG. 50 , the length of the first wiring 31 in the X-axis direction may be increased to increase the length of the second extending portion 31D of the first wiring 31 in the X-axis direction. The length of the second extending portion 31D in the X-axis direction is equal to the length of the first extending portion 31C in the X-axis direction. In other words, the distance D2 in the X-axis direction from the second light-emitting surface LS2 of the semiconductor laser element 40 to the second end surface 31B of the first wiring 31 is equal to the distance D1 in the X-axis direction from the first light-emitting surface LS1 to the first end surface 31A of the first wiring 31. In the example shown in FIG. 50 , the second extending portion 31D constitutes the second reflecting portion 150.

[0320] 51 , the second laser light emitted from the second light-emitting surface LS2 of the semiconductor laser element 40 is diffused (scattered) by the diffusing material 57. As a result, the second laser light includes laser light directed toward the substrate surface 21. In this modified example, the second extension 31D of the first wiring 31 reflects at least a portion of the laser light directed toward the substrate surface 21. The reflected laser light passes through the second sealing end face 54 or the sealing surface 51 and is emitted to the outside of the semiconductor laser device 10. In this manner, it can be said that the semiconductor laser device 10 includes a second reflecting portion 150 that reflects at least a portion of the laser light emitted from the second light-emitting surface LS2 of the semiconductor laser element 40 and directed toward the substrate surface 21. In the illustrated example, the second extension 31D of the first wiring 31 constitutes the second reflecting portion 150. In other words, it can be said that the first wiring 31 has a portion that extends from the second light-emitting surface LS2 toward the second sealing end face 54 in a plan view as the second reflecting portion 150.

[0321] Note that the laser light of the second laser light directed toward the substrate surface 21 is also reflected by the second wiring 32. The reflected laser light passes through the second sealing end face 54 or the sealing surface 51 and is emitted to the outside of the semiconductor laser device 10. For this reason, it can be said that the second wiring 32 also constitutes the second reflecting portion 150.

[0322] In the eighth embodiment, as shown in Fig. 52, a reflective film 220 may be formed on the substrate surface 21 between the first wiring 31 and the second wiring 32 in the Y-axis direction. The reflective film 220 constitutes the second reflecting portion 150. The reflective film 220 may be made of a material containing copper, similar to the first wiring 31 and the second wiring 32, or may be made of a material (e.g., Al) different from the material of the first wiring 31 and the second wiring 32. The reflective film 220 may be in an electrically floating state, for example.

[0323] In the illustrated example, the area of ​​the reflective film 220 in plan view is equal to the area of ​​the second wiring 32. More specifically, the length of the reflective film 220 in the X-axis direction is equal to the length of the second wiring 32 in the X-axis direction. The length of the reflective film 220 in the Y-axis direction is equal to the length of the second wiring 32 in the Y-axis direction.

[0324] The length of the reflective film 220 in the X-axis direction can be changed as desired. In one example, the length of the reflective film 220 in the X-axis direction may be longer than the length of the second wiring 32. The length of the reflective film 220 in the X-axis direction may be longer than the length of the first wiring 31. The length of the reflective film 220 in the X-axis direction may be shorter than the length of the second wiring 32 in the X-axis direction. The length of the reflective film 220 in the X-axis direction may be shorter than the length of the first wiring 31 in the X-axis direction. It is preferable that the length of the reflective film 220 in the X-axis direction be equal to or longer than the length of the semiconductor laser element 40 in the X-axis direction.

[0325] Furthermore, the length of the reflective film 220 in the Y-axis direction can be changed as desired. In one example, the length of the reflective film 220 in the Y-axis direction may be longer than the length of the second wiring 32 in the Y-axis direction. The length of the reflective film 220 in the Y-axis direction may be shorter than the length of the second wiring 32 in the Y-axis direction.

[0326] In the eighth embodiment, as shown in FIG. 53 , a reflector 230 serving as the second reflecting portion 150 may be disposed between the semiconductor laser element 40 and the second wiring 32 in the Y-axis direction. The reflector 230 is provided on the substrate surface 21. In one example, as shown in FIG. 54 , the reflector 230 is disposed on the first wiring 31. More specifically, the reflector 230 is disposed on the second extension portion 31D of the first wiring 31. Note that the reflector 230 is not limited to being disposed on the first wiring 31, and may be disposed on the substrate surface 21. In this case, the reflector 230 is disposed in a portion of the substrate surface 21 between the first wiring 31 and the second wiring 32 in the Y-axis direction. The reflector 230 is formed of a metal material such as Cu or Al. The reflector 230 is bonded to the first wiring 31 by, for example, an adhesive. The reflector 230 is sealed with a sealing resin 50.

[0327] The reflector 230 has a bottom surface 231 facing the substrate surface 21 (first wiring 31 ), a side surface 232 extending upward from the bottom surface 231 , and a reflective surface 233 connecting the bottom surface 231 and the side surface 232 .

[0328] The bottom surface 231 is a surface that contacts the adhesive and is formed as a flat surface perpendicular to the thickness direction (Z-axis direction) of the substrate 20. The side surface 232 extends upward from one of both edges of the bottom surface 231 in the Y-axis direction that is closer to the second substrate side surface 24. The reflecting surface 233 connects the one of both edges of the bottom surface 231 in the Y-axis direction that is closer to the semiconductor laser element 40 to the upper edge of the side surface 232. The reflecting surface 233 faces in a direction intersecting with the substrate surface 21. The reflecting surface 233 is an inclined surface that inclines upward as it approaches the second substrate side surface 24 (as it moves away from the semiconductor laser element 40). The inclination angle of the reflecting surface 233 is set depending on the range of the laser light to be emitted from the sealing resin 50. In one example, the inclination angle of the reflecting surface 233 is greater than 0° and less than 45°. Here, the inclination angle of the reflecting surface 233 is an acute angle formed between the bottom surface 231 and the reflecting surface 233 .

[0329] In the illustrated example, the height dimension (size in the Z-axis direction) of the side surface 232 is equal to the thickness dimension (size in the Z-axis direction) of the semiconductor laser element 40. Therefore, when viewed from the Y-axis direction, the reflecting surface 233 is formed to overlap the entire surface of the first light-emitting surface LS1.

[0330] The shape of the reflector 230 can be changed arbitrarily. In one example, as shown in FIG. 55 , the height dimension of the reflector 230 (the size of the reflector 230 in the Z-axis direction) may be smaller than the thickness of the semiconductor laser element 40. Also, as shown in FIG. 55 , the tilt angle of the reflector 230 may be smaller than the tilt angle of the reflector 80 serving as the first reflecting unit 70. In other words, the tilt angles of the reflectors 80 and 230 may be set individually. As a result, the tilt angle of the reflector 80 and the tilt angle of the reflector 230 may be different from each other.

[0331] The position of the reflector 230 can be changed as desired. In one example, as shown in Fig. 56, the reflector 230 may be disposed closer to the second substrate side surface 24 than the second wiring 32. The reflector 230 is disposed on the substrate surface 21, for example. In this case, the reflector 230 is bonded to the substrate surface 21 by, for example, an adhesive.

[0332] Furthermore, the reflector 230 may be arranged so that its side surface 232 is located more inward (closer to the second wiring 32) than the second substrate side surface 24. When the reflector 230 is arranged more toward the second substrate side surface 24 than the second wiring 32, it can also be said that the reflector 230 is arranged between the second wiring 32 and the second substrate side surface 24 in the Y-axis direction.

[0333] Furthermore, the reflector 230 is not limited to being disposed on the substrate surface 21, and may be disposed on the second wiring 32. In this case, the length of the second wiring 32 in the Y-axis direction may be increased, and the reflector 230 may be disposed in a portion of the second wiring 32 closer to the second substrate side surface 24 than the region to which the wire W is bonded. The reflector 230 is bonded to the second wiring 32 by, for example, an adhesive.

[0334] In the tenth embodiment, as shown in FIG. 57 , the length of the submount substrate 200 in the Y-axis direction may be increased. In this case, the semiconductor laser element 40 is disposed at the center of the submount substrate 200 in the Y-axis direction in a plan view. That is, in a plan view, the distance between the first light-emitting surface LS1 of the semiconductor laser element 40 and the first side surface 203 of the submount substrate 200 in the Y-axis direction is equal to the distance between the second element side surface 44 (second light-emitting surface LS2) of the semiconductor laser element 40 and the second side surface 204 of the submount substrate 200 in the Y-axis direction. This allows the front-side wiring 207 to have long both the first extension portion 207A extending from the first light-emitting surface LS1 to the first side surface 203 and the second extension portion 207B extending from the second light-emitting surface LS2 to the second side surface 204 in a plan view. 57 , the first extending portion 207A constitutes the first reflecting portion 70, and the second extending portion 207B constitutes the second reflecting portion 150. In other words, it can be said that the front-side wiring 207 has a portion (second extending portion 207B) that extends from the second light-emitting surface LS2 toward the second sealed end surface 54 as the second reflecting portion 150. Here, the front-side wiring 207 corresponds to the "connecting wiring."

[0335] In the tenth embodiment, the semiconductor laser device 10 may include a reflector 230 as the second reflecting portion 150. The reflector 230 may be mounted on, for example, the surface 201 of the submount substrate 200. The reflector 230 may also be mounted on, for example, the surface-side wiring 207 of the submount substrate 200.

[0336] In the tenth embodiment, the semiconductor laser device 10 may include a reflective film formed on the surface 201 of the submount substrate 200 as the second reflector 150. The reflective film is formed of a metal film such as a Cu film or an Al film. Alternatively, the reflective film may be formed of an insulating film with high reflectivity, such as a white film. The reflective film is disposed, for example, closer to the second side surface 204 than the surface-side wiring 207. The reflective film is, for example, in an electrically floating state.

[0337] [Combination of First Reflecting Portion and Second Reflecting Portion] In the eighth embodiment, the semiconductor laser device 10 may include a reflector 230 shown in Fig. 54 as the second reflecting portion 150. In this case, the reflector 230 may have a shape shown in Fig. 55. Furthermore, the position of the reflector 230 may be closer to the second substrate side surface 24 than the second wiring 32, as shown in Fig. 56.

[0338] In the eighth embodiment, the semiconductor laser device 10 may include a reflector 80 (see FIG. 14 ) as the first reflecting portion 70. In this case, the reflector 80 may be disposed closer to the first substrate side surface 23 (first sealing end surface 53) than the semiconductor laser element 40. Furthermore, the reflector 80 may be disposed between the semiconductor laser element 40 and the first substrate side surface 23 (first sealing end surface 53) in the Y-axis direction, as shown in FIG.

[0339] 52 in which the semiconductor laser device 10 includes the reflective film 220, the semiconductor laser device 10 may include a reflector 80 as the first reflective portion 70. The reflector 80 may be disposed so that its side surface 82 is flush with the first sealing end surface 53 (first substrate side surface 23). The reflector 80 may also be disposed so that its side surface 82 is located more inward (closer to the semiconductor laser element 40) than the first sealing end surface 53 (first substrate side surface 23). In this case, it can be said that the reflector 80 is disposed between the first sealing end surface 53 (first substrate side surface 23) and the semiconductor laser element 40 in the Y-axis direction.

[0340] In the modification in which the semiconductor laser device 10 shown in FIG. 52 includes the reflective film 220, the semiconductor laser device 10 may include the reflective film 210 (see FIG. 46) as the first reflective portion 70.

[0341] In this manner, the semiconductor laser device 10 of the present disclosure may include both the first reflector 70 and the second reflector 150. The configurations of the first reflector 70 and the second reflector 150 can each be changed as desired. Furthermore, the semiconductor laser device 10 of the present disclosure may not include the first reflector 70 but may include the second reflector 150, or may not include both the first reflector 70 and the second reflector 150.

[0342] [Modifications of the Semiconductor Laser Element] In the first to fifth and seventh to tenth embodiments, the shape of the semiconductor laser element 40 in plan view can be changed as desired. For example, the shape of the semiconductor laser element 40 in plan view may be square, or rectangular with the Y-axis direction as the short side direction and the X-axis direction as the long side direction.

[0343] In the first to fifth and seventh to tenth embodiments, the semiconductor laser device 10 may include a plurality of semiconductor laser elements 40. In one example, as shown in Fig. 58, the semiconductor laser device 10 includes three semiconductor laser elements 40A, 40B, and 40C. These semiconductor laser elements 40A to 40C are arranged at a distance from each other in the X-axis direction. In other words, the semiconductor laser elements 40A to 40C are arranged side by side in a direction perpendicular to the emission direction of the laser light from the semiconductor laser elements 40A to 40C in a plan view.

[0344] Here, the semiconductor laser elements 40A to 40C may be configured so that the wavelengths of the laser beams emitted by the semiconductor laser elements 40A to 40C are different from one another. For example, the semiconductor laser element 40A is configured to emit red laser beam, the semiconductor laser element 40B is configured to emit green laser beam, and the semiconductor laser element 40C is configured to emit blue laser beam.

[0345] [Modification of the Wire] In the eighth embodiment, the position of the wire W can be changed as desired. In one example, as shown in FIG. 59 , the wire W may be formed so as not to overlap the second light-emitting surface LS2 of the semiconductor laser element 40 when viewed from the Y-axis direction. In one example, the joint portion of the wire W with the second wiring 32 may be shifted in the X-axis direction relative to the second light-emitting surface LS2. In the illustrated example, the wire W includes a joint WX connected to the second wiring 32. This joint WX is provided at a position shifted relative to the second light-emitting surface LS2 in the direction along the second light-emitting surface LS2 (the X-axis direction in FIG. 59 ). More specifically, in the illustrated example, the joint WX is positioned closer to the fourth substrate side surface 26 than the second light-emitting surface LS2. Note that the joint WX of the wire W may be positioned closer to the third substrate side surface 25 than the second light-emitting surface LS2, for example.

[0346] In the first to fifth and seventh to tenth embodiments, it is possible to arbitrarily change the number of wires W. In one example, the anode electrode 47 of the semiconductor laser element 40 and the second wiring 32 (second mounting portion 193) may be connected by a plurality of wires W.

[0347] In the first to fifth and seventh to tenth embodiments, the wire W may be formed so that the bonding portion of the wire W with the anode electrode 47 of the semiconductor laser element 40 is the first bonding, and the bonding portion with the second wiring 32 is the second bonding.

[0348] In the sixth embodiment, the wires W1 to W4 may be formed so that the bonding portions of the wires W1 to W4 with the anode electrodes 127A to 127D of the semiconductor laser element 120 are the first bonding, and the bonding portions of the wires W1 to W4 with the second wirings 32A to 32D are the second bonding.

[0349] [Modification of End Face Through Holes] In the fourth embodiment, the number and positions of the first end face through holes 39A can be changed as desired. In one example, as shown in FIG. 60 , two first end face through holes 39A are formed on the first substrate side surface 23, dispersed on both sides of the semiconductor laser element 40 in the X-axis direction. That is, one of the two first end face through holes 39A is positioned closer to the third substrate side surface 25 than the semiconductor laser element 40 when viewed from the Y-axis direction. The other of the two first end face through holes 39A is positioned closer to the fourth substrate side surface 26 than the semiconductor laser element 40 when viewed from the Y-axis direction. A resist 90 is provided on each first end face through hole 39A, covering the corresponding first end face through hole 39A from above.

[0350] According to this configuration, when viewed from the Y-axis direction, the resist 90 is not disposed in a position overlapping with the semiconductor laser element 40 in the X-axis direction, and the first wiring 31 (first extension portion 31C) is exposed. As a result, the first wiring 31 (first extension portion 31C) reflects at least a portion of the laser light emitted from the first light-emitting surface LS1 of the semiconductor laser element 40 and directed toward the substrate surface 21. The reflected laser light passes through the first sealing end face 53 or the sealing surface 51 and is emitted to the outside of the semiconductor laser device 10. Therefore, the beam angle of the laser light emitted by the semiconductor laser device 10 can be widened.

[0351] The first end face through hole 39A is not limited to the first substrate side surface 23, and may be formed on at least one of the third substrate side surface 25 and the fourth substrate side surface 26. In this case, for example, the first end face through hole 39A formed on the third substrate side surface 25 is formed to be connected to the end of the first wiring 31 on the third substrate side surface 25 side. Furthermore, for example, the first end face through hole 39A formed on the fourth substrate side surface 26 is formed to be connected to the end of the first wiring 31 on the fourth substrate side surface 26 side. In such a case, by increasing the length of the first wiring 31 in the X-axis direction, the first end face through hole 39A formed on at least one of the third substrate side surface 25 and the fourth substrate side surface 26 is more likely to be connected to the first wiring 31. In this way, it is sufficient that the first end face through hole 39A is formed on at least one of the first substrate side surface 23, the third substrate side surface 25, and the fourth substrate side surface 26. When first end face through holes 39A are formed on third substrate side surface 25 and fourth substrate side surface 26 and side walls 60 are disposed on first end face through holes 39A, resist 90 may be omitted.

[0352] In the fourth embodiment, the number and positions of the second end face through holes 39B can be changed as desired. For example, the second end face through holes 39B may be formed on the second substrate side surface 24 so as to be spaced apart in the X-axis direction.

[0353] The second end-face through-holes 39B are not limited to the second substrate side surface 24, and may be formed on at least one of the third substrate side surface 25 and the fourth substrate side surface 26. In this case, for example, the second end-face through-holes 39B formed on the third substrate side surface 25 are formed to be connected to the ends of the second wirings 32 on the third substrate side surface 25 side. Furthermore, for example, the second end-face through-holes 39B formed on the fourth substrate side surface 26 are formed to be connected to the ends of the second wirings 32 on the fourth substrate side surface 26 side. In such a case, increasing the length of the second wirings 32 in the X-axis direction makes it easier for the second end-face through-holes 39B formed on at least one of the third substrate side surface 25 and the fourth substrate side surface 26 to be connected to the second wirings 32. In this way, the second end-face through-holes 39B may be formed on at least one of the first substrate side surface 23, the third substrate side surface 25, and the fourth substrate side surface 26.

[0354] [Modifications to the Sealing Resin] In each embodiment, the shape of the sealing resin 50 is not limited to a rectangular parallelepiped and can be modified as desired. For example, the first sealing end face 53 may be an inclined surface that slopes toward the second substrate side face 24 as it increases away from the substrate surface 21. The second sealing end face 54 may be an inclined surface that slopes toward the first substrate side face 23 as it increases away from the substrate surface 21. The third sealing end face 55 may be an inclined surface that slopes toward the fourth substrate side face 26 as it increases away from the substrate surface 21. The fourth sealing end face 56 may be an inclined surface that slopes toward the third substrate side face 25 as it increases away from the substrate surface 21.

[0355] 61 , the sealing surface 51 may be formed as a spherical surface that curves upward toward the center of the substrate surface 21. Alternatively, the sealing surface 51 may be formed as a curved surface that curves upward toward the center in the Y-axis direction of the substrate surface 21. Although not shown, the sealing surface 51 may be formed in a hemispherical shape.

[0356] In each embodiment, the position of the first sealing end surface 53 in the Y-axis direction can be changed as desired. In one example, the first sealing end surface 53 may be located more inward than the first substrate side surface 23 (closer to the semiconductor laser element 40).

[0357] In the eighth embodiment, the position of the second sealing end face 54 in the Y-axis direction can be changed as desired. In one example, the second sealing end face 54 may be located more inward than the second substrate side face 24 (closer to the semiconductor laser element 40).

[0358] In each embodiment, as shown in FIG. 62 , the sealing resin 50 may contain a phosphor 240 mixed therein in addition to the diffusing material 57. The phosphor 240 is configured to absorb the light of the semiconductor laser element 40 and emit light in a wavelength range different from that of the light of the semiconductor laser element 40. In one example, the semiconductor laser element 40 may be configured to emit blue laser light. The phosphor 240 may be configured to absorb the blue laser light and emit yellow light. In this way, the phosphor 240 emitting blue laser light and yellow light can emit white laser light to the outside of the semiconductor laser device 10. Note that the configuration of the phosphor 240 can be changed as desired, and it may also be configured to absorb light and emit infrared light.

[0359] [Modifications of the Side Wall] In the first to fifth and tenth embodiments, the shape of the second side wall portion 62 of the side wall 60 can be modified as desired. As an example, as shown in Fig. 63, the inner surface 62A of the second side wall portion 62 may be an inclined surface that slopes upward (away from the substrate surface 21 in the Z-axis direction) toward the second substrate side surface 24. In this case, a reflective film 250 may be formed on the inner surface 62A. The reflective film 250 is formed of a metal film such as a Cu film or an Al film.

[0360] In the first to fifth and tenth embodiments, the joining structure between the side wall 60 and the substrate 20 can be changed as desired. For example, the joining structure between the side wall 60 and the substrate 20 may be configured such that a pre-formed side wall 60 is joined to the substrate surface 21 of the substrate 20 with an adhesive. Similarly, in the ninth embodiment, the joining structure between the side wall portion 172 and the bottom wall portion 171 may be configured such that the side wall portion 172 is formed separately from the bottom wall portion 171, and then the bottom wall portion 171 and the side wall portion 172 are joined with an adhesive.

[0361] In the sixth and seventh embodiments, the semiconductor laser device 10 may include a sidewall 60. In the semiconductor laser device 10 of the seventh embodiment, the sidewall 60 is formed so as to surround both the semiconductor laser element 40 and the drive circuit element 130 in plan view.

[0362] In the first to fifth and tenth embodiments, the side wall 60 may be omitted from the semiconductor laser device 10. In this case, as an example, as shown in Figures 64 and 65 , the sealing resin 50 may be formed so that its first sealing end face 53 is flush with the first substrate side face 23 of the substrate 20, its second sealing end face 54 is flush with the second substrate side face 24, its third sealing end face 55 is flush with the third substrate side face 25, and its fourth sealing end face 56 is flush with the fourth substrate side face 26.

[0363] An example of a method for manufacturing a semiconductor laser device 10 in which the sidewall 60 is omitted will be described with reference to Figures 66 and 67. Note that, for convenience, Figures 66 and 67 show a configuration in which four semiconductor laser devices 10 can be manufactured at once, but this is not limiting, and a configuration in which more semiconductor laser devices 10 can be manufactured at once may also be used. Note that in Figure 67, a diffusing material 57 in a sealing resin 850, which will be described later, is omitted to make the drawing easier to understand.

[0364] The manufacturing method of the semiconductor laser device 10 includes the steps of preparing a substrate 820, mounting a semiconductor laser element 40, forming wires W, forming a sealing resin 850, and singulating.

[0365] The step of preparing the substrate 820 is the same as the step of preparing the substrate 820 in the first embodiment. In this modification, the sidewall 60 is omitted, and therefore the step of mounting the semiconductor laser element 40 is carried out in a state in which the sidewall 860 (see FIG. 8) is not provided on the substrate 820, as shown in FIG. 66 . The step of mounting the semiconductor laser element 40 includes a step of mounting the semiconductor laser element 40 on the first wiring 31. In this step, the semiconductor laser element 40 is die-bonded to the first wiring 31. Subsequently, in the step of forming the wires W, the wires W are formed by a wire bonding apparatus, as in the first embodiment.

[0366] As shown in FIG. 67 , in the step of forming the sealing resin 850, a frame body 870 is first provided on the substrate 820. The frame body 870 is formed so as to surround the four first wirings 31, the four second wirings 32, and the four semiconductor laser elements 40 in a plan view. Next, the sealing resin 850 is formed by filling the frame body 870 with a light-transmitting resin material by, for example, potting. The resin material is formed from a material containing at least one of a silicone resin, an epoxy resin, and an acrylic resin. In one example, the sealing resin 850 is formed from a silicone resin. The sealing resin 850 includes a diffusing material 57 (see FIG. 65 ).

[0367] The method for forming the sealing resin 850 is not limited to this, and the sealing resin 850 may be formed on the substrate 820 by resin molding. Examples of resin molding include transfer molding and compression molding. After the sealing resin 850 is formed, the frame 870 is removed.

[0368] In the singulation step, both the sealing resin 850 and the substrate 820 are cut with a dicing blade along the cutting lines CL in Fig. 67. This forms the sealing resin 50 and the substrate 20. Through the above steps, the semiconductor laser device 10 is manufactured.

[0369] [Modifications to the Submount Substrate] In the tenth embodiment, the material of the submount substrate 200 can be changed as desired. For example, the submount substrate 200 may be formed of a Si substrate. For another example, the submount substrate 200 may be formed of a glass epoxy resin, similar to the substrate 20.

[0370] Furthermore, the submount substrate 200 may be formed of a conductive material instead of an insulating material such as alumina. In one example, the submount substrate 200 may be formed of a material containing Cu. In another example, the submount substrate 200 may be formed of a material containing conductive Si. In this way, when the submount substrate 200 is formed of a conductive material, the vias 209 may be omitted from the submount substrate 200.

[0371] In the tenth embodiment, the semiconductor laser device 10 may include a conductive portion provided to penetrate the submount substrate 200 in its thickness direction (Z-axis direction) instead of the front-side wiring 207, the back-side wiring 208, and the via 209. The semiconductor laser element 40 is mounted on the surface of the conductive portion exposed from the front surface 201 of the submount substrate 200 with a conductive bonding material SD. The surface of the conductive portion exposed from the back surface 202 of the submount substrate 200 is bonded to the first wiring 31 with the conductive bonding material SD.

[0372] In the tenth embodiment, the electrical connection structure between the semiconductor laser element 40 and the first wiring 31 can be changed as desired. In one example, the submount substrate 200 may not electrically connect the semiconductor laser element 40 and the first wiring 31. In this case, the back surface side wiring 208 and the via 209 may be omitted from the submount substrate 200. For example, the semiconductor laser device 10 includes a wire that connects the front surface side wiring 207 and the first wiring 31. In this way, the semiconductor laser element 40 and the first wiring 31 are electrically connected by the front surface side wiring 207 and the wire.

[0373] [Modifications Related to Protective Element] In each embodiment, the semiconductor laser device 10 may further include a protective element 260 that protects the semiconductor laser element 40. Figures 68 and 69 show an example of the configuration of the semiconductor laser device 10 including the protective element 260. For convenience, the wires WA and WB are omitted from Figure 69.

[0374] 68 and 69 , the semiconductor laser device 10 further includes a fourth wiring 270 provided on the substrate front surface 21 of the substrate 20, a fourth electrode 271 provided on the substrate back surface 22 of the substrate 20, and a via 272 that electrically connects the fourth wiring 270 and the fourth electrode 271. In the example shown, the fourth wiring 270 is formed on the substrate front surface 21, and the fourth electrode 271 is formed on the substrate back surface 22.

[0375] The fourth wiring 270 is arranged closer to the second substrate side surface 24 than the first wiring 31. The fourth wiring 270 is arranged at a position aligned in the Y-axis direction with the second wiring 32. The fourth wiring 270 is arranged closer to the third substrate side surface 25 than the second wiring 32. Thus, in the illustrated example, the length of the second wiring 32 in the X-axis direction is shorter than in the first embodiment in order to provide a space for arranging the fourth wiring 270.

[0376] The fourth electrode 271 is disposed closer to the second substrate side surface 24 than the first electrode 33. The fourth electrode 271 is disposed at a position overlapping the fourth wiring 270 in a plan view. In this manner, in the illustrated example, the length in the X-axis direction of the second electrode 34 (not shown) is shorter than in the first embodiment in order to provide a space for arranging the fourth electrode 271.

[0377] The via 272 is provided to penetrate the substrate 20 in its thickness direction (Z-axis direction). The via 272 is connected to both the fourth wiring 270 and the fourth electrode 271. Therefore, the fourth wiring 270 and the fourth electrode 271 are electrically connected by the via 272.

[0378] The protective element 260 is mounted on the fourth wiring 270. More specifically, the protective element 260 is joined to the fourth wiring 270 by a conductive bonding material SD. In other words, the protective element 260 is mounted on the fourth wiring 270. Both the fourth wiring 270 and the protective element 260 are sealed with the sealing resin 50.

[0379] 68 , the protective element 260 is disposed closer to the second substrate side surface 24 than the semiconductor laser element 40 in a plan view. The protective element 260 is provided on the substrate surface 21 between the semiconductor laser element 40 and the second sealing end surface 54. The protective element 260 is disposed at a position overlapping the semiconductor laser element 40 when viewed from the Y-axis direction. The position of the protective element 260 can be changed as desired.

[0380] 69 , the protective element 260 has an anode electrode 261 formed on its front surface and a cathode electrode 262 formed on its back surface. The front surface of the protective element 260 faces the same side as the substrate front surface 21, and the back surface of the protective element 260 faces the substrate front surface 21.

[0381] The cathode electrode 262 is in contact with the conductive bonding material SD. Therefore, the cathode electrode 262 is electrically connected to the fourth wiring 270 by the conductive bonding material SD. Since the fourth wiring 270 is electrically connected to the fourth electrode 271, it can be said that the cathode electrode 262 is electrically connected to the fourth electrode 271.

[0382] 68 , the semiconductor laser device 10 includes a wire WA that connects the semiconductor laser element 40 and the fourth wiring 270, and a wire WB that connects the protective element 260 and the first wiring 31. Each of the wires WA and WB is sealed with a sealing resin 50. Each of the wires WA and WB is formed of the same material as the wire W, for example.

[0383] The wire WA is connected to the anode electrode 47 of the semiconductor laser element 40. As a result, the anode electrode 47 of the semiconductor laser element 40 is electrically connected to the fourth wiring 270 by the wire WA. Since the fourth wiring 270 is electrically connected to the cathode electrode 262 of the protection element 260, it can be said that the anode electrode 47 of the semiconductor laser element 40 is electrically connected to the cathode electrode 262 of the protection element 260.

[0384] The wire WB is connected to the anode electrode 261 of the protective element 260. As a result, the anode electrode 261 of the protective element 260 is electrically connected to the first wiring 31 by the wire WB. Since the first wiring 31 is electrically connected to the cathode electrode 48 of the semiconductor laser element 40 (see FIG. 69 ), it can be said that the anode electrode 261 of the protective element 260 is electrically connected to the cathode electrode 48 of the semiconductor laser element 40. In this way, the protective element 260 is connected in anti-parallel to the semiconductor laser element 40.

[0385] [Modifications Related to Laser Vias] In the first to eighth and tenth embodiments, as shown in FIG. 70 , a laser via 280 may be formed in the first substrate side surface 23 of the substrate 20. The laser via 280 is configured by a recess that curves from the first substrate side surface 23 toward the second substrate side surface 24 and penetrates the substrate 20 in its thickness direction (Z-axis direction), and a conductor embedded in the recess. For example, Cu is used as the conductor. Multiple laser vias 280 (six in the illustrated example) are provided. The multiple laser vias 280 are arranged spaced apart from each other in the X-axis direction. Each laser via 280 connects the first wiring 31 and the first electrode 33 (see FIG. 5 ).

[0386] The term "on" used in this disclosure includes the meanings of "on" and "above" unless the context clearly indicates otherwise. Therefore, the expression "A is formed on B" is intended to mean that, although in each of the above embodiments, A may be in contact with B and disposed directly on B, as a modified example, A may be disposed above B without contacting B. In other words, the term "on" does not exclude a structure in which another member is formed between A and B.

[0387] The Z-axis direction used in this disclosure does not necessarily have to be the vertical direction, nor does it have to completely coincide with the vertical direction. Therefore, various structures according to this disclosure are not limited to the "up" and "down" in the Z-axis direction described in this specification being "up" and "down" in the vertical direction. For example, the X-axis direction may be the vertical direction, or the Y-axis direction may be the vertical direction.

[0388] <Supplementary Notes> The technical ideas that can be understood from the above-described embodiments and modified examples are described below. Note that, for the purpose of aiding understanding and not intending to limit the scope of the invention, the corresponding reference numerals in the embodiments are shown in parentheses for the configurations described in the Supplementary Notes. The reference numerals are shown as examples to aid understanding, and the components described with the reference numerals should not be limited to the components indicated by the reference numerals.

[0389] [Appendix A1] A semiconductor laser device (10) comprising: a substrate (20) having a substrate surface (21); a semiconductor laser element (40) provided on the substrate surface (21); and a translucent sealing resin (50) having a sealing surface (51) facing the same side as the substrate surface (21) and a first sealing end face (53) intersecting with the sealing surface (51), and sealing the semiconductor laser element (40), wherein the sealing resin (50) includes a diffusing material (57) that diffuses light, and the semiconductor laser element (40) includes a first light-emitting surface (LS1) that emits laser light toward the first sealing end face (53).

[0390] [Appendix A2] The semiconductor laser device according to Appendix A1, comprising: a first wiring (31) provided on the substrate surface (21); the semiconductor laser element (40) is mounted on the first wiring (31) and is provided on the substrate surface (21) via the first wiring (31); and a first reflecting portion (70) provided at a position closer to the first sealing end face (53) than the first light-emitting surface (LS1), and reflecting a portion of the laser light emitted from the first light-emitting surface (LS1).

[0391] [Appendix A3] The semiconductor laser device according to Appendix A2, wherein the first wiring (31) has, as the first reflecting portion (70), a portion (31C) that extends from the first light-emitting surface (LS1) toward the first sealing end surface (53) in a planar view.

[0392] [Appendix A4] The semiconductor laser device according to Appendix A2, further comprising, as the first reflecting portion (70), a reflecting film (210) formed separately from the first wiring (31) on the substrate surface (21).

[0393] [Appendix A5] The semiconductor laser device according to Appendix A2, comprising, as the first reflecting portion (70), a reflector (80) provided on the substrate surface (21) and including a reflecting surface (83) facing in a direction intersecting with the substrate surface (21).

[0394] [Appendix A6] The semiconductor laser device according to Appendix A1, further comprising: a first wiring (31) provided on the substrate surface (21); and a submount substrate (200) mounted on the first wiring (31), wherein the semiconductor laser element (40) is mounted on the submount substrate (200), and the first wiring (31) and the semiconductor laser element (40) are electrically connected to each other.

[0395] [Appendix A7] The semiconductor laser device according to Appendix A6, further comprising: a connection wiring (207) provided on a surface (201) of the submount substrate (200) facing the semiconductor laser element (40); and a first reflecting portion (70) provided at a position closer to the first sealing end face (53) with respect to the first light-emitting surface (LS1), and reflecting a portion of the laser light emitted from the first light-emitting surface (LS1), wherein the connection wiring (207) has a portion (207A) as the first reflecting portion (70) extending from the first light-emitting surface (LS1) toward the first sealing end face (53).

[0396] [Appendix A8] The semiconductor laser device according to Appendix A1, wherein the substrate (160) includes a conductive portion (180) made of a conductive material, the substrate surface (161) includes a conductive surface (181) formed by a surface of the conductive portion (180), the semiconductor laser element (40) is mounted on the conductive surface (181), and the semiconductor laser device further includes a first reflecting portion (70) that is provided at a position closer to the first sealing end face (53) than the first light-emitting surface (LS1) and reflects a portion of the laser light emitted from the first light-emitting surface (LS1).

[0397] [Appendix A9] The semiconductor laser device according to Appendix A8, wherein the conductive surface (181) has, as the first reflecting portion (70), a portion that extends from the first light-emitting surface (LS1) toward the first sealing end face (53) in a plan view.

[0398] [Appendix A10] The semiconductor laser device according to any one of Appendices A1 to A9, further comprising a sidewall (60) surrounding the sealing resin (50) and having an opening that exposes the first sealing end surface (53).

[0399] [Appendix A11] The semiconductor laser device according to any one of Appendices A1 to A10, wherein the sealing resin (50) includes a second sealing end face (54) opposite to the first sealing end face (53), and the semiconductor laser element (40) includes a second light-emitting surface (LS2) that emits laser light toward the second sealing end face (54).

[0400] [Appendix A12] The semiconductor laser device according to Appendix A11, further comprising a second reflecting portion (150) provided at a position closer to the second sealing end face (54) than the second light-emitting surface (LS2), and configured to reflect a portion of the laser light emitted from the second light-emitting surface (LS2).

[0401] [Appendix A13] The semiconductor laser device according to Appendix A12, further comprising a second wiring (32) provided on the substrate surface (21) and electrically connected to the semiconductor laser element (40) by a wire (W), the second wiring (32) being positioned closer to the second sealing end face (54) than the second light-emitting surface (LS2), and the second reflecting portion (150) being constituted by the second wiring (32).

[0402] [Appendix A14] The semiconductor laser device according to Appendix A12, comprising a first wiring (31) provided on the substrate surface (21), wherein the semiconductor laser element (40) is mounted on the first wiring (31) and is provided on the substrate surface (21) via the first wiring (31), and the first wiring (31) has, as the second reflecting portion (150), a portion (31D) extending from the second light-emitting surface (LS2) toward the second sealing end face (54) in a planar view.

[0403] [Appendix A15] The semiconductor laser device according to Appendix A12, comprising, as the second reflecting portion (150), a reflector (230) provided on the substrate surface (21) and including a reflecting surface (233) facing in a direction intersecting with the substrate surface (21).

[0404] [Appendix A16] The semiconductor laser device further comprises: a first wiring (31) provided on the substrate surface (21); a submount substrate (200) mounted on the first wiring (31); a connection wiring (207) provided on a surface (201) of the submount substrate (200) facing the semiconductor laser element (40); and a second reflecting portion (150) provided at a position closer to the second sealing end face (54) with respect to the second light-emitting surface (LS2) and reflecting a part of the laser light emitted from the second light-emitting surface (LS2), wherein the semiconductor laser element (40) is mounted on the submount substrate (200), and the submount substrate (200) electrically connects the first wiring (31) and the semiconductor laser element (40), The semiconductor laser device according to Appendix A11, wherein the connection wiring (207) has a portion (207B) that extends from the second light-emitting surface (LS2) toward the second sealing end surface (54) as the second reflecting portion (150).

[0405] [Appendix A17] The semiconductor laser device according to any one of Appendices A11 to A16, further comprising a photodiode (110) provided on the substrate surface (21) between the semiconductor laser element (40) and the second sealing end face (LS2), the photodiode receiving laser light emitted from the second light-emitting surface (LS2).

[0406] [Appendix A18] The semiconductor laser device according to any one of Appendices A1 to A10, further comprising a drive circuit element (130) mounted on the substrate surface (21) and driving the semiconductor laser element (40).

[0407] [Appendix A19] The semiconductor laser device according to any one of Appendices A1 to A18, wherein the semiconductor laser element (120) has a configuration in which a plurality of light-emitting portions (PD1 to PD4) are arranged on one light-emitting surface.

[0408] [Appendix A20] The semiconductor laser device according to any one of Appendices A1 to A19, wherein the sealing resin (50) further includes a phosphor (240), and the phosphor (240) is configured to absorb light from the semiconductor laser element (40) and emit infrared light.

[0409] [Appendix A21] The semiconductor laser device according to any one of Appendices A1 to A20, further comprising a protection element (250) for protecting the semiconductor laser element (40).

[0410] [Appendix A22] The semiconductor laser device according to any one of Appendices A1 to A20, wherein the first sealing end face (53) is rougher than the sealing surface (51).

[0411] [Appendix A23] The semiconductor laser device according to any one of Appendices A1 to A22, wherein the sealing resin (50) further contains a phosphor (240).

[0412] [Appendix A24] The semiconductor laser device according to any one of Appendices A1 to A23, wherein the sealing resin (50) is made of a material containing at least one of a silicone resin, an epoxy resin, and an acrylic resin.

[0413] [Appendix A25] The semiconductor laser device according to any one of Appendices A2 to A7, wherein the substrate (20) includes a substrate back surface (22) opposite to the substrate front surface (21), and further comprises: a second wiring (32) provided on the substrate front surface (21) and electrically connected to the semiconductor laser element (40) by a wire (W); a first electrode (33) provided on the substrate back surface (22); a second electrode (34) provided on the substrate back surface (22); a first via (35) penetrating the substrate (20) and connecting the first wiring (31) and the first electrode (33); and a second via (36) penetrating the substrate (20) and connecting the second wiring (32) and the second electrode (34).

[0414] [Appendix A26] The semiconductor laser device described in Appendix A25, wherein the substrate (20) includes a first substrate side surface (23) and a second substrate side surface (24) connecting the substrate front surface (21) and the substrate back surface (22), the first substrate side surface (23) faces the same side as the first light-emitting surface (LS1), the second substrate side surface (24) faces the opposite side to the first substrate side surface (23), a first side electrode (37) formed continuously from the first electrode (33) is formed on the first substrate side surface (23), and a second side electrode (38) formed continuously from the second electrode (34) is formed on the second substrate side surface (24).

[0415] [Appendix A27] The semiconductor laser device according to Appendix A26, wherein the first side electrode (37) connects the first electrode (33) and the first wiring (31), and the second side electrode (38) connects the second electrode (34) and the second wiring (32).

[0416] [Appendix A28] A semiconductor laser device according to any one of Appendices A2 to A7, comprising: a second wiring (32) provided on the substrate surface (21) and electrically connected to the semiconductor laser element (40) by a wire (W); the first wiring (31) is electrically connected to a cathode electrode (48) of the semiconductor laser element (40); and the second wiring (32) is electrically connected to an anode electrode (47) of the semiconductor laser element (40).

[0417] [Appendix A29] The semiconductor laser device according to any one of Appendices A1 to A28, wherein the substrate (20) includes a substrate back surface (22) opposite to the substrate front surface (21), a first substrate side surface (23) connecting the substrate front surface (21) and the substrate back surface (22) and facing the same side as the first light-emitting surface (LS1), and a second substrate side surface (24) opposite to the first substrate side surface (23), and further includes an end face through hole (39) recessed from the first substrate side surface (23) toward the second substrate side surface (24) and provided so as to penetrate the substrate (20) in its thickness direction (Z-axis direction).

[0418] [Appendix A30] The semiconductor laser device according to Appendix A29, further comprising a resist (90) covering the end face through hole (39) from the substrate surface (21) side.

[0419] [Appendix A31] The semiconductor laser device according to appendix A30, wherein the resist (90) is made of a material having a higher reflectivity than the substrate (20).

[0420] [Appendix A32] The semiconductor laser device described in Appendix A29 or A30, wherein the end face through hole (39) is provided at a position shifted from the first light-emitting surface (LS1) in a direction (X-axis direction) along the first sealed end face (53) in a planar view.

[0421] [Appendix A33] The semiconductor laser device according to any one of Appendices A29 to A31, wherein a plurality of the end face through holes (39) are provided.

[0422] [Appendix A34] The semiconductor laser device according to any one of Appendices A25 to A27, wherein the sealing resin (50) includes a second sealing end face (54) opposite to the first sealing end face (53), the semiconductor laser element (40) includes a second light-emitting surface (LS2) that emits laser light toward the second sealing end face (54), and further includes a wire (W) that electrically connects the semiconductor laser element (40) and the second wiring (32), the wire (W) including a bonding portion that is bonded to the second wiring (32), and the bonding portion is provided at a position shifted from the second light-emitting surface (LS2) in a direction (X-axis direction) that is perpendicular to a thickness direction (Z-axis direction) of the substrate (20) and that is along the second light-emitting surface (LS2).

[0423] [Appendix A35] The semiconductor laser device according to any one of Appendices A25 to A27, further comprising a wire (W) that electrically connects the semiconductor laser element (40) and the second wiring (32), wherein the wire (W) is a bonding wire, a joint of the wire (W) with the second wiring (32) is a first bonding, and a joint of the wire (W) with the semiconductor laser element (40) is a second bonding.

[0424] [Appendix A36] The semiconductor laser device according to Appendix A1, wherein the substrate (160) includes: a first conductive portion (180) formed of a conductive material; and an insulating substrate (160A) that is a mold resin that holds the first conductive portion (180).

[0425] [Appendix A37] The semiconductor laser device described in Appendix A36, wherein the insulating substrate (160A) is integrally formed with a bottom wall portion (171) that holds the first conductive portion (180) and a side wall portion (172) that rises from the bottom wall portion (171) and surrounds the sealing resin (50) in a planar view.

[0426] [Appendix A38] The semiconductor laser device according to any one of Appendices A1 to A35, wherein the substrate (20) is made of a material containing ceramic.

[0427] [Appendix A39] The semiconductor laser device according to any one of Appendices A1 to A35, wherein the substrate (20) is made of glass epoxy resin.

[0428] [Appendix A40] The semiconductor laser device according to Appendix A6, wherein the submount substrate (200) is formed of a material having a thermal expansion coefficient closer to that of the semiconductor laser element (40) than that of the first wiring (31).

[0429] [Appendix A41] The semiconductor laser device according to any one of Appendices A11 to A15, further comprising a sidewall (60) surrounding the sealing resin (50) and having openings that expose the first sealing end face (53) and the second sealing end face (54), respectively.

[0430] [Appendix A42] The semiconductor laser device according to any one of Appendices A1 to A41, wherein a plurality of the semiconductor laser elements (40P, 40Q, 40R) are provided.

[0431] [Appendix B1] A method for manufacturing a semiconductor laser device (10), comprising: a step of preparing a substrate (820) having first wiring (31) provided on a substrate surface (821); a step of mounting a semiconductor laser element (40) on the first wiring (31); and a step of forming a light-transmitting sealing resin (850) that seals the semiconductor laser element (40), wherein the sealing resin (850) has a sealing surface (51) facing the same side as the substrate surface (821), a first sealing end face (53) that intersects with the sealing surface (51), and a diffusing material (57) that diffuses light, the semiconductor laser element (40) including a first light-emitting surface (LS1) that emits laser light, and the semiconductor laser element (40) is mounted on the first wiring (31) so that the first light-emitting surface (LS1) emits laser light toward the first sealing end face (53).

[0432] [Appendix B2] The method for manufacturing a semiconductor laser device according to Appendix B1, further comprising the step of forming a side wall (860) on the substrate (820) by resin molding, wherein the side wall (860) surrounds the sealing resin (850) in a plan view.

[0433] [Appendix B3] The method for manufacturing a semiconductor laser device according to Appendix B2, wherein the sealing resin (850) is filled into a space surrounded by the side wall (860) and the substrate (820) by potting or resin molding.

[0434] a step of forming an insulating substrate (960) that supports the lead frame (980) by resin molding; a step of mounting a semiconductor laser element (40) on the first mounting portion (183); and a step of forming a light-transmitting sealing resin (950) that seals the semiconductor laser element (40), wherein the sealing resin (950) has a sealing surface (51) facing the same side as the substrate surface (21), a first sealing end face (53) that intersects with the sealing surface (51), and a diffusing material (57) that diffuses light, the semiconductor laser element (40) includes a first light-emitting surface (LS1) that emits laser light, and the semiconductor laser element (40) is mounted on the first mounting portion (183) so that the first light-emitting surface (LS1) emits laser light toward the first sealing end face (53).

[0435] [Appendix B5] In the step of forming the insulating substrate (960), a bottom wall portion (971) that supports the lead frame (980) and a side wall portion (972) that surrounds the sealing resin (850) in a planar view are integrally formed by resin molding. This is the method for manufacturing a semiconductor laser device described in Appendix B4.

[0436] The above description is merely illustrative. Those skilled in the art will recognize that many more possible combinations and permutations are possible other than the components and methods (manufacturing processes) listed for the purpose of illustrating the technology of the present disclosure. The present disclosure is intended to embrace all alternatives, modifications, and variations that fall within the scope of the present disclosure, including the claims.

[0437] REFERENCE SIGNS LIST 10...Semiconductor laser device 20...Substrate 21...Substrate surface 22...Substrate back surface 23-26...First to fourth substrate side surfaces 31...First wiring 31A...First end surface 31B...Second end surface 31C...First extension portion 31D...Second extension portion 31E...Third extension portion 31F...Fourth extension portion 32...Second wiring 33...First electrode 34...Second electrode 35...First via 36...Second via 37...First side electrode 38...Second side electrode 39A...First end face through hole 39B...Second end face through hole 40, 40A, 40B, 40C...Semiconductor laser element 41...Element surface 42...Element back surface 43-46...First to fourth element side surfaces 47...Anode electrode 48...Cathode electrode 50...Sealing resin DESCRIPTION OF SYMBOLS 51...Sealing surface 53-56...First to fourth sealing end faces 57...Diffusion material 60...Side wall 61...First side wall portion 62...Second side wall portion 62A...Inner surface 70...First reflecting portion 80...Reflector 81...Bottom surface 82...Side surface 83...Reflecting surface 90...Resist 100...Third wiring 101...Third electrode 102...Via 110...Photodiode 111...Anode electrode 112...Cathode electrode 120...Semiconductor laser element 121...Element surface 122...Element back surface 123-126...First to fourth element side surfaces 127A-127D...Anode electrode 128...Cathode electrode 32A-32D...Second wiring 34A-34D...Second electrode 130...Drive circuit element 131...Switching element 131A...Surface of switching element 131B...Back surface of switching element 131S...Source electrode 131D...Drain electrode 131G...Gate electrode 132...Capacitor 132A...First electrode 132B...Second electrode 140...Wiring for drive circuit 141G...Gate wiring 141S...Source wiring 142...Electrode for drive circuit 143G...Gate electrode 143S...Source electrode 144...Via for drive circuit 145G...Via for gate 145S...Via for source 150...Second reflecting portion 160...Substrate 160A...Insulating substrate 161...Substrate surface 162...Substrate back surface 163-166...First to fourth substrate side surfaces 171...Bottom wall portion 172...Side wall portion 180...First conductive portion 181...First conductive surface 182...First conductive back surface 183...First mounting portion183A...first end surface 183B...second end surface 183C...first extension portion 184...first suspension lead portion 190...second conductive portion 191...second conductive front surface 192...second conductive rear surface 193...second mounting portion 194...second suspension lead portion 210...reflective film 173...reflector portion 173A...inclined surface 174...reflective film 200...submount substrate 201...front surface 202...rear surface 203-206...first to fourth side surfaces 207...front surface wiring 207A...first extension portion 207B...second extension portion 208...rear surface wiring 209...via 220...reflective film 230...reflector 231...bottom surface 232...side surface 233...reflective surface 240...phosphor 250...Reflective film 260...Protective element 261...Anode electrode 262...Cathode electrode 270...Fourth wiring 271...Fourth electrode 272...Via 280...Laser via 820...Substrate 821...Substrate surface 822...Substrate back surface 850...Sealing resin 860...Side wall 870...Frame 950...Sealing resin 960...Insulating substrate 971...Bottom wall portion 972...Side wall portion 980...Lead frame SD...Conductive bonding material LS1...First light-emitting surface LS2...Second light-emitting surface PD1 to PD4...First to fourth light-emitting portions W, W1 to W4, WA, WB, WD, WF, WS, WG...Wire WX...Joint portion SP...Solder paste SPA...Fillet PCB...Circuit board D1, D2, DA1, DA2, DB1, DB2...Distance

Claims

1. a substrate having a substrate surface; a semiconductor laser element provided on a surface of the substrate; a sealing surface facing the same side as the substrate surface and a first sealing end surface intersecting the sealing surface, and a light-transmitting sealing resin that seals the semiconductor laser element; the sealing resin includes a diffusing material that diffuses light, The semiconductor laser element includes a first light emitting surface that emits laser light toward the first sealing end surface. Semiconductor laser device.

2. A first wiring is provided on the surface of the substrate, the semiconductor laser element is mounted on the first wiring and provided on the substrate surface via the first wiring; a first reflecting portion provided at a position closer to the first sealing end surface than the first light emitting surface and configured to reflect a portion of the laser light emitted from the first light emitting surface; 2. The semiconductor laser device according to claim 1.

3. The first wiring has, as the first reflecting portion, a portion that extends from the first light emitting surface toward the first sealing end surface in a plan view.

3. The semiconductor laser device according to claim 2.

4. The first reflecting portion includes a reflecting film formed on the surface of the substrate separately from the first wiring.

3. The semiconductor laser device according to claim 2.

5. The first reflecting portion includes a reflector provided on the substrate surface and including a reflecting surface extending in a direction intersecting the substrate surface.

3. The semiconductor laser device according to claim 2.

6. A first wiring provided on a surface of the substrate; a submount substrate mounted on the first wiring; Further equipped with the semiconductor laser element is mounted on the submount substrate; The first wiring and the semiconductor laser element are electrically connected to each other.

2. The semiconductor laser device according to claim 1.

7. a connection wiring provided on a surface of the submount substrate facing the semiconductor laser element; a first reflecting portion provided at a position closer to the first sealing end surface than the first light emitting surface and configured to reflect a portion of the laser light emitted from the first light emitting surface; The connection wiring has a portion that extends from the first light-emitting surface toward the first sealed end surface as the first reflecting portion.

7. The semiconductor laser device according to claim 6.

8. the substrate includes a conductive portion made of a conductive material; the substrate surface includes a conductive surface constituted by a surface of the conductive portion, the semiconductor laser device is mounted on the conductive surface; a first reflecting portion provided at a position closer to the first sealing end surface than the first light emitting surface and configured to reflect a portion of the laser light emitted from the first light emitting surface; 2. The semiconductor laser device according to claim 1.

9. The conductive surface has, as the first reflecting portion, a portion extending from the first light emitting surface toward the first sealing end surface in a plan view.

9. The semiconductor laser device according to claim 8.

10. a side wall surrounding the sealing resin and having an opening through which the first sealing end surface is exposed; 2. The semiconductor laser device according to claim 1.

11. the sealing resin includes a second sealing end surface opposite to the first sealing end surface, The semiconductor laser element includes a second light emitting surface that emits laser light toward the second sealing end surface.

2. The semiconductor laser device according to claim 1.

12. a second reflecting portion provided at a position closer to the second sealing end face than the second light emitting surface and configured to reflect a portion of the laser light emitted from the second light emitting surface; 12. The semiconductor laser device according to claim 11.

13. a second wiring provided on a surface of the substrate and electrically connected to the semiconductor laser element by a wire; the second wiring is disposed at a position closer to the second sealing end surface than the second light emitting surface, The second reflecting portion is formed by the second wiring.

13. The semiconductor laser device according to claim 12.

14. A first wiring is provided on the surface of the substrate, the semiconductor laser element is mounted on the first wiring and provided on the substrate surface via the first wiring; The first wiring has, as the second reflecting portion, a portion that extends from the second light emitting surface toward the second sealing end surface in a plan view.

13. The semiconductor laser device according to claim 12.

15. The second reflecting portion includes a reflector provided on the substrate surface and including a reflecting surface extending in a direction intersecting the substrate surface.

13. The semiconductor laser device according to claim 12.

16. A first wiring provided on a surface of the substrate; a submount substrate mounted on the first wiring; The side of the submount substrate facing the semiconductor laser element A connection wiring provided on the surface; a second reflecting portion provided at a position closer to the second sealing end surface than the second light emitting surface and configured to reflect a portion of the laser light emitted from the second light emitting surface, the semiconductor laser element is mounted on the submount substrate; the submount substrate electrically connects the first wiring and the semiconductor laser element, The connection wiring has a portion that extends from the second light-emitting surface toward the second sealing end surface as the second reflecting portion.

12. The semiconductor laser device according to claim 11.

17. a photodiode provided on the surface of the substrate between the semiconductor laser element and the second sealing end face, the photodiode receiving the laser light emitted from the second light emitting face; 12. The semiconductor laser device according to claim 11.

18. and a driving circuit element mounted on the surface of the substrate for driving the semiconductor laser element.

2. The semiconductor laser device according to claim 1.

19. The semiconductor laser element has a configuration in which a plurality of light emitting portions are arranged on one light emitting surface.

2. The semiconductor laser device according to claim 1.

20. The sealing resin further includes a phosphor, The phosphor is configured to absorb the light from the semiconductor laser element and emit infrared light.

2. The semiconductor laser device according to claim 1.