Semiconductor light-emitting device

Abstract

A semiconductor light-emitting device comprising an end surface light-emitting element having a plurality of light-emitting units, a first light-emitting unit provided with a first element electrode, a second light-emitting unit provided with a second element electrode, a first surface electrode electrically connected to the first element electrode, a second surface electrode electrically connected to the second element electrode, a plurality of first wires electrically connecting the first element electrode and the first surface electrode, and a plurality of second wires electrically connecting the second element electrode and the second surface electrode. In plan view, the maximum interval between adjacent second wires among the plurality of second wires in a first direction is greater than the maximum interval between adjacent first wires among the plurality of first wires in the first direction.

Description

Semiconductor light-emitting device

[0001] The present disclosure relates to semiconductor light emitting devices.

[0002] 2. Description of the Related Art A configuration using an edge-emitting semiconductor laser as a light source for a semiconductor light-emitting device is known (see, for example, Patent Document 1).

[0003] Japanese Patent Application Laid-Open No. 2008-141039

[0004] In order to increase the output power of edge-emitting devices such as edge-emitting semiconductor lasers, a configuration including multiple light-emitting sections is known. In this case, it is desirable that the variation in pulse width of light emitted when a voltage is applied to the edge-emitting devices is small.

[0005] A semiconductor light emitting device that solves the above problem comprises a substrate having a substrate front surface and a substrate back surface, an edge light emitting element arranged on the substrate and having a plurality of light emitting portions arranged in a first direction that intersects the thickness direction of the substrate in a planar view, a plurality of surface electrodes formed on the substrate surface and arranged at a distance from each other, and a plurality of wires electrically connecting the plurality of light emitting portions to the plurality of surface electrodes, wherein the plurality of light emitting portions include a first light emitting portion provided with a first element electrode and a second light emitting portion provided with a second element electrode, the plurality of surface electrodes include a first surface electrode electrically connected to the first element electrode and a second surface electrode electrically connected to the second element electrode, and the plurality of wires include a plurality of first wires electrically connecting the first element electrode to the first surface electrode and a plurality of second wires electrically connecting the second element electrode to the second surface electrode, and in a planar view, the maximum spacing between adjacent ...

[0006] According to the semiconductor light emitting device, it is possible to reduce variations in the pulse width of light emitted when a voltage is applied to the edge light emitting element.

[0007] FIG. 1 is a perspective view of a semiconductor light-emitting device of a first embodiment. FIG. 2 is a plan view schematically showing the internal structure of the semiconductor light-emitting device of FIG. 1. FIG. 3 is a rear view of the semiconductor light-emitting device of FIG. 1. FIG. 4 is a cross-sectional view schematically showing the cross-sectional structure of the semiconductor light-emitting device taken along line F4-F4 in FIG. 2. FIG. 5 is a cross-sectional view schematically showing the cross-sectional structure of the semiconductor light-emitting device taken along line F5-F5 in FIG. 2. FIG. 6 is a schematic cross-sectional view of the semiconductor light-emitting device of FIG. 1. FIG. 7 is an enlarged view of a portion of a front surface electrode and its periphery in a state where wires are omitted from the semiconductor light-emitting device of FIG. 2. FIG. 8 is an enlarged view of a portion of a front surface electrode and its periphery in the semiconductor light-emitting device of FIG. 2. FIG. 9 is a plan view schematically showing the internal structure of a semiconductor light-emitting device of a comparative example. FIG. 10 is a plan view schematically showing the internal structure of a semiconductor light-emitting device of a second embodiment. FIG. 11 is a plan view schematically showing the internal structure of a semiconductor light-emitting device of a third embodiment. Fig. 12 is an enlarged view of a portion of the surface electrode and its periphery in the semiconductor light emitting device of Fig. 11. Fig. 13 is an enlarged plan view of a portion of the surface electrode and its periphery in a semiconductor light emitting device of a modified example. Fig. 14 is an enlarged plan view of a portion of the surface electrode and its periphery in a semiconductor light emitting device of a modified example. Fig. 15 is an enlarged plan view of a portion of the surface electrode and its periphery in a semiconductor light emitting device of a modified example. Fig. 16 is a plan view schematically showing the internal structure of a semiconductor light emitting device of a modified example. Fig. 17 is a plan view schematically showing the internal structure of a semiconductor light emitting device of a modified example. Fig. 18 is a plan view schematically showing the internal structure of a semiconductor light emitting device of a modified example. Fig. 19 is a plan view schematically showing the internal structure of a semiconductor light emitting device of a modified example.

[0008] Hereinafter, several embodiments of the semiconductor light emitting device of the present disclosure will be described with reference to the accompanying drawings. Note that for simplicity and clarity of explanation, the components shown in the drawings are not necessarily drawn to scale. Also, for ease of understanding, hatching lines may be omitted in cross-sectional views. The accompanying drawings merely illustrate embodiments of the present disclosure and should not be considered as limiting the present disclosure.

[0009] The following detailed description includes devices, systems, and methods embodying exemplary embodiments of the present disclosure. This detailed description is merely illustrative in nature and is not intended to limit the embodiments of the present disclosure or the application and uses of such embodiments.

[0010] First Embodiment [Overall Configuration of Semiconductor Light-Emitting Device] The overall configuration of a semiconductor light-emitting device 10 according to a first embodiment will be described with reference to FIGS. 1 to 6. FIG. 1 shows a perspective view of the semiconductor light-emitting device 10. FIG. 2 schematically shows the internal planar structure of the semiconductor light-emitting device 10. FIG. 3 schematically shows the rear surface structure of the semiconductor light-emitting device 10. FIG. 4 is a cross-sectional view of the semiconductor light-emitting device 10 taken along line F4-F4 in FIG. 2, and FIG. 5 is a cross-sectional view of the semiconductor light-emitting device 10 taken along line F5-F5 in FIG. 2. FIG. 6 shows the cross-sectional structure of the semiconductor light-emitting device 10 as viewed from the light-emitting surface. Note that in FIGS. 4 and 5, a wire 100, which will be described later, has been omitted to facilitate understanding of the drawings.

[0011] As shown in FIG. 1 , the semiconductor light emitting device 10 includes a rectangular, flat substrate 20, an edge light emitting element 70 (see FIG. 2 ) provided on the substrate 20, and a case 200 provided on the substrate 20 to house the edge light emitting element 70. Here, the thickness direction of the substrate 20 is referred to as the "Z direction." Two mutually orthogonal directions perpendicular to the Z direction are referred to as the "X direction" and the "Y direction," respectively. Furthermore, in this specification, "plan view" refers to the semiconductor light emitting device 10 being viewed from the thickness direction (Z direction) of the substrate 20. In the first embodiment, the substrate 20 is formed in a rectangular shape with the X direction being the longitudinal direction and the Y direction being the lateral direction in a plan view.

[0012] The substrate 20 has a substrate front surface 21 and a substrate back surface 22 that face opposite each other in the Z direction, and first to fourth substrate side surfaces 23 to 26 that intersect with the substrate front surface 21 and the substrate back surface 22. In the first embodiment, both the substrate front surface 21 and the substrate back surface 22 are formed as planes that are perpendicular to the Z direction. In one example, the first to fourth substrate side surfaces 23 to 26 are planes that are perpendicular to the substrate front surface 21 and the substrate back surface 22. The first substrate side surface 23 and the second substrate side surface 24 constitute both end surfaces of the substrate 20 in the X direction, and the third substrate side surface 25 and the fourth substrate side surface 26 constitute both end surfaces of the substrate 20 in the Y direction.

[0013] The substrate 20 is made of, for example, glass epoxy resin. The substrate 20 may be made of a material containing ceramic. Examples of the material containing ceramic include aluminum nitride (AlN) and alumina (Al ２ O ３ When the substrate 20 is made of a material containing ceramic, the heat dissipation performance of the substrate 20 is improved, and therefore the temperature of the edge light emitting element 70 can be prevented from becoming excessively high.

[0014] As shown in Fig. 2, the edge-emitting element 70 is, for example, a laser diode that emits light in a predetermined wavelength band and functions as a light source for the semiconductor light-emitting device 10. The edge-emitting element 70 is an edge-emitting laser element. There are no particular limitations on the configuration of the edge-emitting element 70 as an edge-emitting laser element, but in the first embodiment, a Fabry-Perot laser diode element is used. As indicated by the outline arrow LD in Fig. 5, the edge-emitting element 70 is configured to emit light toward the fourth substrate side surface 26 in a plan view.

[0015] As shown in FIG. 1 , the case 200 is formed in a box shape that opens in the Z direction toward the substrate 20. The case 200 has first to fourth side walls 211 to 214 that are formed in a rectangular frame shape in a plan view, and a top wall 215 that covers one end of the opening formed by the first to fourth side walls 211 to 214 in the Z direction. In one example, the first to fourth side walls 211 to 214 and the top wall 215 are integrally formed. The first side wall 211 and the second side wall 212 constitute side walls at both ends of the case 200 in the X direction, and the third side wall 213 and the fourth side wall 214 constitute side walls at both ends of the case 200 in the Y direction. Of the side walls at both ends of the case 200 in the X direction, the first side wall 211 constitutes the side wall closer to the first substrate side surface 23 of the substrate 20, and the second side wall 212 constitutes the side wall closer to the second substrate side surface 24 of the substrate 20. The third side wall 213 constitutes the side wall at both ends of the case 200 in the Y direction that is closer to the third substrate side surface 25 of the substrate 20, and the fourth side wall 214 constitutes the side wall closer to the fourth substrate side surface 26 of the substrate 20. In one example, the first to third side walls 211 to 213 and the top wall 215 are formed translucently, and the fourth side wall 214 is formed transparent. In the case 200, the fourth side wall 214 is a side surface that is disposed in the emission direction of the edge-emitting element 70. It is sufficient that the case 200 is transparent at least in the emission direction of the edge-emitting element 70. Therefore, at least one of the first to third side walls 211 to 213 and the top wall 215 may be formed transparent, like the fourth side wall 214.

[0016] The case 200 is made of, for example, a glass material. However, instead of a glass material, the case 200 may be made of a transparent or translucent resin material. Examples of such resin materials include acrylic resin and epoxy resin.

[0017] 2, the semiconductor light-emitting device 10 includes a plurality of (ten in the first embodiment) surface electrodes 30 formed on the substrate surface 21 of the substrate 20. The surface electrodes 30 are spaced apart from one another. The surface electrodes 30 are formed of, for example, copper foil. Note that the material of the surface electrodes 30 is not limited to copper (Cu), and may include at least one of aluminum (Al), nickel (Ni), palladium (Pd), silver (Ag), and gold (Au).

[0018] The surface electrodes 30 include first inner surface electrodes 31P, 31Q, second inner surface electrodes 32P, 32Q, outer surface electrodes 33P, 33Q, and end surface electrodes 34P, 34Q. The first inner surface electrodes 31P, 31Q, second inner surface electrodes 32P, 32Q, outer surface electrodes 33P, 33Q, and end surface electrodes 34P, 34Q are surface electrodes electrically connected to the edge light emitting element 70.

[0019] The first inner surface electrode 31P, the second inner surface electrode 32P, the outer surface electrode 33P, and the end surface electrode 34P are each formed in a region of the substrate surface 21 closer to the first substrate side surface 23 than a virtual center line CL (two-dot chain line) that extends along the Y direction at the center of the X direction of the substrate 20. The first inner surface electrode 31Q, the second inner surface electrode 32Q, the outer surface electrode 33Q, and the end surface electrode 34Q are each formed in a region of the substrate surface 21 closer to the second substrate side surface 24 than the virtual center line CL. The first inner surface electrode 31P, the second inner surface electrode 32P, the outer surface electrode 33P, and the end surface electrode 34P are symmetrical with the first inner surface electrode 31Q, the second inner surface electrode 32Q, the outer surface electrode 33Q, and the end surface electrode 34Q about the virtual center line CL in a plan view.

[0020] The first inner surface electrode 31P, the second inner surface electrode 32P, and the outer surface electrode 33P are arranged spaced apart from one another in the X direction while being aligned with one another in the Y direction. The first inner surface electrode 31P is disposed closer to the virtual center line CL (the center of the substrate surface 21 in the X direction) than the second inner surface electrode 32P and the outer surface electrode 33P. The outer surface electrode 33P is disposed closer to the first substrate side surface 23 than the first inner surface electrode 31P and the second inner surface electrode 32P. Therefore, it can be said that the outer surface electrode 33P is disposed closer to the edge of the substrate surface 21 than the first inner surface electrode 31P and the second inner surface electrode 32P.

[0021] In a plan view, the end surface electrode 34P is arranged closer to the first substrate side surface 23 than the end-face light emitting element 70. The end surface electrode 34P is arranged shifted closer to the fourth substrate side surface 26 than the first inner surface electrode 31P, the second inner surface electrode 32P, and the outer surface electrode 33P. When viewed from the X direction, the end surface electrode 34P includes a portion overlapping with the outer surface electrode 33P and a portion extending closer to the fourth substrate side surface 26 than the outer surface electrode 33P.

[0022] The first inner surface electrode 31Q, the second inner surface electrode 32Q, and the outer surface electrode 33Q are arranged spaced apart from one another in the X direction while being aligned with one another in the Y direction. The first inner surface electrode 31Q is arranged closer to the virtual center line CL (the center of the substrate surface 21 in the X direction) than the second inner surface electrode 32Q and the outer surface electrode 33Q. The outer surface electrode 33Q is arranged closer to the second substrate side surface 24 than the first inner surface electrode 31Q and the second inner surface electrode 32Q. The first inner surface electrodes 31P and 31Q are arranged adjacent to one another across the virtual center line CL.

[0023] In a plan view, the end surface electrode 34Q is arranged closer to the second substrate side surface 24 than the edge light emitting element 70. The end surface electrode 34Q is arranged shifted closer to the fourth substrate side surface 26 than the first inner surface electrode 31Q, the second inner surface electrode 32Q, and the outer surface electrode 33Q. When viewed from the X direction, the end surface electrode 34Q includes a portion overlapping with the outer surface electrode 33Q and a portion extending closer to the fourth substrate side surface 26 than the outer surface electrode 33Q.

[0024] In this way, in the arrangement direction (X direction) of the first inner surface electrodes 31P, 31Q, the second inner surface electrodes 32P, 32Q, and the outer surface electrodes 33P, 33Q, the area closer to the central virtual line CL (the center of the substrate surface 21 in the X direction) is defined as the "inside," and the areas closer to the first substrate side surface 23 and the second substrate side surface 24 are defined as the "outside."

[0025] The detailed shapes of the first inner surface electrodes 31P, 31Q, the second inner surface electrodes 32P, 32Q, the outer surface electrodes 33P, 33Q, and the end surface electrodes 34P, 34Q will be described later.

[0026] The multiple surface electrodes 30 include a mounting pattern 35 and an adhesive pattern 36 formed on the substrate surface 21 of the substrate 20. The mounting pattern 35 is arranged on the substrate surface 21 closer to the fourth substrate side surface 26 than the first inner surface electrodes 31P, 31Q, the second inner surface electrodes 32P, 32Q, and the outer surface electrodes 33P, 33Q. The mounting pattern 35 is arranged on the substrate surface 21 between the end surface electrodes 34P, 34Q in the X direction. In a plan view, the mounting pattern 35 is formed in a rectangular shape with the X direction as the longitudinal direction and the Y direction as the lateral direction. When viewed from the Y direction, the mounting pattern 35 extends in the X direction so as to overlap with the first inner surface electrodes 31P, 31Q, the second inner surface electrodes 32P, 32Q, and the outer surface electrodes 33P, 33Q.

[0027] The adhesive pattern 36 is formed in a frame shape surrounding the first inner surface electrodes 31P, 31Q, the second inner surface electrodes 32P, 32Q, the outer surface electrodes 33P, 33Q, the end surface electrodes 34P, 34Q, and the mounting pattern 35. In the first embodiment, the adhesive pattern 36 is formed in a rectangular frame shape with the X direction as the longitudinal direction and the Y direction as the lateral direction. The adhesive pattern 36 is a pattern onto which an adhesive is applied to adhere the case 200, and is not electrically connected to the edge light emitting element 70. Therefore, the adhesive pattern 36 is electrically floating. The adhesive pattern 36 may be formed of a different material from the other surface electrodes 30. In one example, the adhesive pattern 36 may be formed of an insulating material. In this case, the surface electrode 30 does not include the adhesive pattern 36. In other words, the semiconductor light emitting device 10 can be said to include multiple surface electrodes 30 and the adhesive pattern 36. In this case, the adhesive pattern 36 can be said to surround the multiple surface electrodes 30 in a planar view.

[0028] A surface resist 37 is provided on the substrate surface 21. In plan view, the surface resist 37 is formed in a U-shape surrounding the mounting pattern 35 from both sides in the X direction and from the third substrate side surface 25 side in the Y direction. The surface resist 37 is formed between the mounting pattern 35 and the first inner surface electrodes 31P, 31Q, the second inner surface electrodes 32P, 32Q, the outer surface electrodes 33P, 33Q, and the end surface electrodes 34P, 34Q. The surface resist 37 is provided so as to contact the side surfaces of the mounting pattern 35. Meanwhile, the surface resist 37 is spaced apart from the first inner surface electrodes 31P, 31Q, the second inner surface electrodes 32P, 32Q, the outer surface electrodes 33P, 33Q, and the end surface electrodes 34P, 34Q. The surface resist 37 is a solder resist and is formed of, for example, an insulating material. For example, an epoxy resin can be used as the insulating material.

[0029] The semiconductor light emitting device 10 includes a submount substrate 90 that supports the edge light emitting element 70. The submount substrate 90 is mounted on the mounting pattern 35. In one example, the submount substrate 90 is die-bonded to the mounting pattern 35. Note that the mounting pattern 35 may be integrated with the submount substrate 90.

[0030] The surface resist 37 allows the die-bonding material (not shown) used to die-bond the submount substrate 90 to the mounting pattern 35 to remain on the mounting pattern 35. This prevents the mounting pattern 35 from being electrically connected to the first inner surface electrodes 31P, 31Q, the second inner surface electrodes 32P, 32Q, the outer surface electrodes 33P, 33Q, and the end surface electrodes 34P, 34Q by the conductive bonding material. Examples of die-bonding materials include solder paste, silver paste, gold paste, and copper paste.

[0031] The submount substrate 90 is formed in a rectangular flat plate shape. In the first embodiment, the submount substrate 90 is formed in a rectangular shape with the X direction as the longitudinal direction and the Y direction as the lateral direction in a plan view. In one example, the submount substrate 90 is slightly smaller than the mounting pattern 35 in a plan view.

[0032] The submount substrate 90 is made of, for example, a material containing silicon (Si). The submount substrate 90 may be made of a material containing ceramic. Examples of the material containing ceramic include AlN or Al. ２ O ３ The submount substrate 90 may be formed from a material containing Cu. When the submount substrate 90 is formed from a material containing ceramic or a material containing Cu, the heat dissipation performance of the submount substrate 90 is improved, and heat from the edge-surface light emitting element 70 is more likely to transfer to the substrate 20 via the submount substrate 90. This makes it possible to prevent the temperature of the edge-surface light emitting element 70 from becoming excessively high.

[0033] 4 and 5, the thickness of the submount substrate 90 is greater than the thickness of the substrate 20. The thickness of the submount substrate 90 can be changed as desired, and may be, for example, equal to or less than the thickness of the substrate 20.

[0034] The submount substrate 90 has a front surface 91 and a back surface 92 that face opposite each other in the Z direction. In the first embodiment, both the front surface 91 and the back surface 92 are formed as flat surfaces perpendicular to the Z direction. The front surface 91 faces the same side as the substrate front surface 21, and the back surface 92 faces the same side as the substrate back surface 22. An edge light emitting element 70 is mounted on the front surface 91 of the submount substrate 90. In one example, the edge light emitting element 70 is die-bonded to the front surface 91 of the submount substrate 90.

[0035] The submount substrate 90 is provided with through-wires 93 that penetrate through the thickness direction thereof. The through-wires 93 are formed of a material containing Cu, for example. The material of the through-wires 93 is not limited to Cu and may contain at least one of titanium (Ti), tungsten (W), and Al. The number of through-wires 93 can be changed as desired. In one example, a plurality of through-wires 93 may be provided. In one example, the number of through-wires 93 may be the same as the number of element electrodes 80 (eight in this embodiment) of the edge-emitting element 70, which will be described later. If the submount substrate 90 is formed of a material containing Cu, the entire submount substrate 90 is made of a conductor, and therefore the through-wires 93 can be omitted.

[0036] As shown in Figures 2, 4, and 5, the edge light emitting element 70 provided on the submount substrate 90 is formed in the shape of a rectangular flat plate. In a plan view, the edge light emitting element 70 has a rectangular shape with the X direction as its longitudinal direction and the Y direction as its lateral direction. In one example, in a plan view, the edge light emitting element 70 is slightly smaller than the submount substrate 90. In a plan view, the edge light emitting element 70 is disposed at the center of the substrate 20 in the X direction. Therefore, it can be said that the central virtual line CL is located at the center of the edge light emitting element 70 in the X direction.

[0037] The thickness of the edge light emitting element 70 is thinner than the thickness of the submount substrate 90. The thickness of the edge light emitting element 70 is also thinner than the thickness of the substrate 20. The thickness of the edge light emitting element 70 can be changed as desired, and may be, for example, greater than or equal to the thickness of the substrate 20.

[0038] The edge-surface light emitting element 70 has an element front surface 71 and an element back surface 72 facing opposite each other in the Z direction, and first to fourth element side surfaces 73 to 76 intersecting the element front surface 71 and the element back surface 72. In the first embodiment, both the element front surface 71 and the element back surface 72 are formed as planes perpendicular to the Z direction. In one example, the first to fourth element side surfaces 73 to 76 are planes perpendicular to the element front surface 71 and the element back surface 72. The first element side surface 73 and the second element side surface 74 constitute both end surfaces of the edge-surface light emitting element 70 in the X direction, and the third element side surface 75 and the fourth element side surface 76 constitute both end surfaces of the edge-surface light emitting element 70 in the Y direction. The first element side surface 73 constitutes the end surface closer to the first substrate side surface 23 of the both end surfaces of the edge-surface light emitting element 70 in the X direction, and the second element side surface 74 constitutes the end surface closer to the second substrate side surface 24 of the both end surfaces of the edge-surface light emitting element 70 in the X direction. The third element side surface 75 constitutes the end surface closer to the third substrate side surface 25 of both end surfaces of the edge light emitting element 70 in the Y direction, and the fourth element side surface 76 constitutes the end surface closer to the fourth substrate side surface 26 of both end surfaces of the edge light emitting element 70 in the Y direction. In one example, the fourth element side surface 76 constitutes the light emitting end surface from which light from the edge light emitting element 70 is emitted.

[0039] The edge light emitting element 70 has a plurality of element electrodes 80 (eight in the first embodiment) formed on the element surface 71. The edge light emitting element 70 has a light emitting portion 80A (80B) for each of the plurality of element electrodes 80. In other words, the edge light emitting element 70 has a plurality of light emitting portions 80A (80B) (eight in the first embodiment). In plan view, the plurality of light emitting portions 80A (80B) are arranged in the X direction. Here, for convenience, of the eight light emitting portions of the edge light emitting element 70, four light emitting portions closer to the first substrate side surface 23 than the center virtual line CL are referred to as "light emitting portions 80A," and four light emitting portions closer to the second substrate side surface 24 than the center virtual line CL are referred to as "light emitting portions 80B." The X direction corresponds to the "first direction." The Y direction corresponds to the "second direction."

[0040] More specifically, the plurality of light-emitting portions 80A (80B) include first inner light-emitting portions 81A, 81B, second inner light-emitting portions 82A, 82B, outer light-emitting portions 83A, 83B, and end light-emitting portions 84A, 84B.

[0041] The first inner light-emitting portion 81A is a light-emitting portion provided with a first inner element electrode 81P (described later), and the first inner light-emitting portion 81B is a light-emitting portion provided with a first inner element electrode 81Q. In other words, the first inner light-emitting portion 81A is a light-emitting portion that emits light when a voltage is applied to the first inner element electrode 81P, and the first inner light-emitting portion 81B is a light-emitting portion that emits light when a voltage is applied to the first inner element electrode 81Q.

[0042] The second inner light-emitting portion 82A is a light-emitting portion provided with a second inner element electrode 82P (described later), and the second inner light-emitting portion 82B is a light-emitting portion provided with a second inner element electrode 82Q. In other words, the second inner light-emitting portion 82A is a light-emitting portion that emits light when a voltage is applied to the second inner element electrode 82P, and the second inner light-emitting portion 82B is a light-emitting portion that emits light when a voltage is applied to the second inner element electrode 82Q.

[0043] The outer light-emitting portion 83A is a light-emitting portion provided with an outer element electrode 83P, which will be described later, and the outer light-emitting portion 83B is a light-emitting portion provided with an outer element electrode 83Q. In other words, it can be said that the outer light-emitting portion 83A is a light-emitting portion that emits light when a voltage is applied to the outer element electrode 83P, and the outer light-emitting portion 83B is a light-emitting portion that emits light when a voltage is applied to the outer element electrode 83Q.

[0044] The edge light emitting portion 84A is a light emitting portion provided with an edge element electrode 84P, which will be described later, and the edge light emitting portion 84B is a light emitting portion provided with an edge element electrode 84Q. In other words, the edge light emitting portion 84A is a light emitting portion that emits light when a voltage is applied to the edge element electrode 84P, and the edge light emitting portion 84B is a light emitting portion that emits light when a voltage is applied to the edge element electrode 84Q.

[0045] In the first embodiment, the first inner element electrode 81P (81Q) corresponds to the "first element electrode," and the first inner light-emitting portion 81A (81B) corresponds to the "first light-emitting portion." The second inner element electrode 82P (82Q) may correspond to the "first element electrode," and the second inner light-emitting portion 82A (82B) may correspond to the "first light-emitting portion." Furthermore, the outer element electrode 83P (83Q) may correspond to the "second element electrode," and the outer light-emitting portion 83A (83B) may correspond to the "second light-emitting portion."

[0046] The multiple element electrodes 80 are arranged at intervals in the X direction in plan view. Therefore, it can be said that the multiple light emitting units 80A (80B) are arranged at intervals in the X direction in plan view. Each element electrode 80 is formed in a rectangular shape with the Y direction as the longitudinal direction and the X direction as the lateral direction in plan view. The multiple element electrodes 80 are formed of, for example, Au. Note that the constituent material of the multiple element electrodes 80 is not limited to Au, and may include at least one of Al, Ni, Pd, Ag, and Cu.

[0047] The multiple element electrodes 80 include first inner element electrodes 81P, 81Q, second inner element electrodes 82P, 82Q, outer element electrodes 83P, 83Q, and end element electrodes 84P, 84Q. Each of the first inner element electrode 81P, the second inner element electrode 82P, the outer element electrode 83P, and the end element electrode 84P is formed in a region of the element surface 71 closer to the first element side surface 73 than the central virtual line CL. Each of the first inner element electrode 81Q, the second inner element electrode 82Q, the outer element electrode 83Q, and the end element electrode 84Q is formed in a region of the element surface 71 closer to the second element side surface 74 than the central virtual line CL.

[0048] The first inner element electrode 81P is disposed closer to the virtual center line CL (the center of the edge-surface light-emitting element 70 in the X direction) than the second inner element electrode 82P, the outer element electrode 83P, and the end element electrode 84P. The end element electrode 84P is disposed closer to the first element side surface 73 than the first inner element electrode 81P, the second inner element electrode 82P, and the outer element electrode 83P. It can be said that the end element electrode 84P is disposed at the end of the element surface 71 in the X direction that is closer to the first element side surface 73. The outer element electrode 83P is disposed closer to the end element electrode 84P than the first inner element electrode 81P and the second inner element electrode 82P.

[0049] The first inner element electrode 81Q is arranged closer to the center virtual line CL (the center of the edge-surface light-emitting element 70 in the X direction) than the second inner element electrode 82Q, the outer element electrode 83Q, and the end element electrode 84Q. The end element electrode 84Q is arranged closer to the second element side surface 74 than the first inner element electrode 81Q, the second inner element electrode 82Q, and the outer element electrode 83Q. It can be said that the end element electrode 84Q is arranged at the end closest to the second element side surface 74 of both ends of the element surface 71 in the X direction. The outer element electrode 83Q is arranged closer to the end element electrode 84Q than the first inner element electrode 81Q and the second inner element electrode 82Q. In this way, in the arrangement direction (X direction) of the first inner element electrodes 81P, 81Q, the second inner element electrodes 82P, 82Q, the outer element electrodes 83P, 83Q, and the end element electrodes 84P, 84Q, the side closer to the center virtual line CL (the center of the end-face light-emitting element 70 in the X direction) is considered to be the "inside," and the side closer to the first element side surface 73 and the second element side surface 74 is considered to be the "outside."

[0050] 4 and 5 , the edge light emitting element 70 includes a back electrode 85. In one example, the back electrode 85 constitutes the back surface 72 of the edge light emitting element 70. In one example, the back electrode 85 is formed over the entire back surface 72 of the edge light emitting element 70. The back electrode 85 is formed of, for example, Au. Note that the constituent material of the back electrode 85 is not limited to Au, and may include at least one of Al, Ni, Pd, Ag, and Cu.

[0051] The edge light emitting element 70 is mounted on the submount substrate 90 by a conductive bonding material (not shown). Therefore, the back electrode 85 is electrically connected to the submount substrate 90 (through wiring 93) by the conductive bonding material. Examples of the conductive bonding material include solder paste, silver paste, gold paste, and copper paste.

[0052] 2, the semiconductor light-emitting device 10 includes a plurality of wires 100 that electrically connect the plurality of light-emitting portions 80A (80B) to the plurality of surface electrodes 30. The plurality of wires 100 are, for example, bonding wires. The plurality of wires 100 are formed of a material containing, for example, Au. The plurality of wires 100 may be formed of a material containing at least one of Cu, Ag, and Al instead of Au.

[0053] The plurality of wires 100 includes a plurality of first inner wires 110P, 110Q, a plurality of second inner wires 120P, 120Q, a plurality of outer wires 130P, 130Q, and a plurality of end wires 140P, 140Q. In the first embodiment, the first inner wire 110P (110Q) corresponds to the "first wire." The second inner wire 120P (120Q) may also correspond to the "first wire." The outer wire 130P (130Q) corresponds to the "second wire."

[0054] The number of the multiple wires 100 is set according to the diameter of the wires 100 and the size of the element electrodes 80 in a plan view. In the first embodiment, there are four of each of the first inner wires 110P, the first inner wires 110Q, the second inner wires 120P, the second inner wires 120Q, the outer wires 130P, the outer wires 130Q, the end wires 140P, and the end wires 140Q. In other words, the numbers of the first inner wires 110P, the first inner wires 110Q, the second inner wires 120P, the second inner wires 120Q, the outer wires 130P, the outer wires 130Q, the end wires 140P, and the end wires 140Q are all equal to one another. In the first embodiment, the number of each of the first inner wire 110P, the first inner wire 110Q, the second inner wire 120P, the second inner wire 120Q, the outer wire 130P, the outer wire 130Q, the end wire 140P, and the end wire 140Q is up to four. Note that the number of each of the first inner wire 110P, the first inner wire 110Q, the second inner wire 120P, the second inner wire 120Q, the outer wire 130P, the outer wire 130Q, the end wire 140P, and the end wire 140Q may be, for example, three or five.

[0055] Each of the multiple first inner wires 110P is bonded to both the first inner element electrode 81P and the first inner surface electrode 31P of the edge-emitting element 70. The first inner element electrode 81P and the first inner surface electrode 31P are electrically connected by the multiple first inner wires 110P. Each of the multiple first inner wires 110Q is bonded to both the first inner element electrode 81Q and the first inner surface electrode 31Q. The first inner element electrode 81Q and the first inner surface electrode 31Q are electrically connected by the multiple first inner wires 110Q.

[0056] Each of the multiple second inner wires 120P is bonded to both the second inner element electrode 82P and the second inner surface electrode 32P of the edge-emitting element 70. The second inner element electrode 82P and the second inner surface electrode 32P are electrically connected by the multiple second inner wires 120P. Each of the multiple second inner wires 120Q is bonded to both the second inner element electrode 82Q and the second inner surface electrode 32Q. The second inner element electrode 82Q and the second inner surface electrode 32Q are electrically connected by the multiple second inner wires 120P.

[0057] Each of the multiple outer wires 130P is bonded to both the outer element electrode 83P and the outer surface electrode 33P of the edge-emitting element 70. The outer element electrode 83P and the outer surface electrode 33P are electrically connected by the multiple outer wires 130P. Each of the multiple outer wires 130Q is bonded to both the outer element electrode 83Q and the outer surface electrode 33Q. The outer element electrode 83Q and the outer surface electrode 33Q are electrically connected by the multiple outer wires 130Q.

[0058] Each of the plurality of end wires 140P is bonded to both the end element electrode 84P and the end surface electrode 34P of the end light emitting element 70. The end element electrode 84P and the end surface electrode 34P are electrically connected by the plurality of end wires 140P. Each of the plurality of end wires 140Q is bonded to both the end element electrode 84Q and the end surface electrode 34Q of the end light emitting element 70. The end element electrode 84Q and the end surface electrode 34Q are electrically connected by the plurality of end wires 140Q.

[0059] 6, the first inner wires 110P, 110Q, the second inner wires 120P, 120Q, the outer wires 130P, 130Q, and the end wires 140P, 140Q have the same wire height. Here, the wire height can be defined as the distance in the Z direction between the portion (top) of the multiple wires 100 that is farthest from the substrate surface 21 in the Z direction and the substrate surface 21.

[0060] 6, the wire heights of the multiple first inner wires 110P are equal to each other, and the wire heights of the multiple first inner wires 110Q are equal to each other. The wire heights of the multiple second inner wires 120P are equal to each other, and the wire heights of the multiple second inner wires 120Q are equal to each other. The wire heights of the multiple outer wires 130P are equal to each other, and the wire heights of the multiple outer wires 130Q are equal to each other. The wire heights of the multiple end wires 140P are equal to each other, and the wire heights of the multiple end wires 140Q are equal to each other.

[0061] The wire heights of the multiple first inner wires 110P may be different from each other, and the wire heights of the multiple first inner wires 110Q may be different from each other. The wire heights of the multiple second inner wires 120P may be different from each other, and the wire heights of the multiple second inner wires 120Q may be different from each other. The wire heights of the multiple outer wires 130P may be different from each other, and the wire heights of the multiple outer wires 130Q may be different from each other. The wire heights of the multiple end wires 140P may be different from each other, and the wire heights of the multiple end wires 140Q may be different from each other.

[0062] 3 , the semiconductor light-emitting device 10 includes a plurality of (nine in the first embodiment) backside electrodes 40 formed on the backside surface 22 of the substrate 20. The backside electrodes 40 are spaced apart from one another. The backside electrodes 40 are formed of, for example, copper foil. Note that the material of the backside electrodes 40 is not limited to Cu, and may include at least one of Al, Ni, Pd, Ag, and Au.

[0063] The multiple back surface electrodes 40 include first inner back surface electrodes 41P, 41Q, second inner back surface electrodes 42P, 42Q, outer back surface electrodes 43P, 43Q, and end back surface electrodes 44P, 44Q. The first inner back surface electrodes 41P, 41Q, second inner back surface electrodes 42P, 42Q, outer back surface electrodes 43P, 43Q, and end back surface electrodes 44P, 44Q are electrically connected to the front surface electrode 30 and serve as external electrodes when the semiconductor light emitting device 10 is mounted.

[0064] The first inner back surface electrode 41P, the second inner back surface electrode 42P, the outer back surface electrode 43P, and the end back surface electrode 44P are each formed in a region of the substrate back surface 22 closer to the first substrate side surface 23 than the center virtual line CL. The first inner back surface electrode 41Q, the second inner back surface electrode 42Q, the outer back surface electrode 43Q, and the end back surface electrode 44Q are each formed in a region of the substrate back surface 22 closer to the second substrate side surface 24 than the center virtual line CL. The first inner back surface electrode 41P, the second inner back surface electrode 42P, the outer back surface electrode 43P, and the end back surface electrode 44P are symmetrical with respect to the center virtual line CL in a plan view.

[0065] The first inner back surface electrode 41P, the second inner back surface electrode 42P, and the outer back surface electrode 43P are arranged spaced apart from one another in the X direction while being aligned with one another in the Y direction. The first inner back surface electrode 41P is arranged closer to the virtual center line CL (the center of the substrate 20 in the X direction) than the second inner back surface electrode 42P and the outer back surface electrode 43P. The outer back surface electrode 43P is arranged closer to the first substrate side surface 23 than the first inner back surface electrode 41P and the second inner back surface electrode 42P.

[0066] The end back surface electrode 44P is arranged to be shifted closer to the fourth substrate side surface 26 than the first inner back surface electrode 41P, the second inner back surface electrode 42P, and the outer back surface electrode 43P. The end back surface electrode 44P is arranged at a position overlapping with the outer back surface electrode 43P when viewed from the Y direction.

[0067] The first inner back surface electrode 41Q, the second inner back surface electrode 42Q, and the outer back surface electrode 43Q are arranged spaced apart from each other in the X direction while being aligned with each other in the Y direction. The first inner back surface electrode 41Q is arranged closer to the virtual center line CL (the center of the substrate 20 in the X direction) than the second inner back surface electrode 42Q and the outer back surface electrode 43Q. The outer back surface electrode 43Q is arranged closer to the second substrate side surface 24 than the first inner back surface electrode 41Q and the second inner back surface electrode 42Q. The first inner back surface electrodes 41P and 41Q are arranged adjacent to each other across the virtual center line CL.

[0068] The end back surface electrode 44Q is arranged to be shifted closer to the fourth substrate side surface 26 than the first inner back surface electrode 41Q, the second inner back surface electrode 42Q, and the outer back surface electrode 43Q. When viewed from the Y direction, the end back surface electrode 44Q is arranged at a position overlapping with the outer back surface electrode 43Q. When viewed from the X direction, the end back surface electrode 44Q is arranged at a position overlapping with the end back surface electrode 44P.

[0069] In this way, in the arrangement direction (X direction) of the first inner back surface electrodes 41P, 41Q, the second inner back surface electrodes 42P, 42Q, and the outer back surface electrodes 43P, 43Q, the side closer to the central virtual line CL (the center of the substrate 20 in the X direction) is defined as the "inside," and the side closer to the first substrate side surface 23 and the second substrate side surface 24 is defined as the "outside."

[0070] In a plan view, the first inner back surface electrodes 41P, 41Q and the second inner back surface electrodes 42P, 42Q are each formed to have the same size and shape. In one example, the first inner back surface electrodes 41P, 41Q and the second inner back surface electrodes 42P, 42Q each include a main body portion that is rectangular in plan view and a protrusion portion that protrudes from the main body portion toward the third substrate side surface 25. The main body portion has a rectangular shape with the Y direction as the longitudinal direction and the X direction as the lateral direction. The protrusion portion is formed to have a curved shape in plan view. Note that the shape of the protrusion portion in plan view can be changed as desired. In one example, the tip surface of the protrusion portion may be formed to have a flat shape extending in the X direction in plan view. In other words, the protrusion portion may be formed to have a rectangular shape in plan view.

[0071] In a plan view, the outer back surface electrodes 43P, 43Q are formed symmetrically with respect to the center virtual line CL. In a plan view, the area of ​​each of the outer back surface electrodes 43P, 43Q is larger than the area of ​​each of the first inner back surface electrodes 41P, 41Q and the second inner back surface electrodes 42P, 42Q. In one example, each of the outer back surface electrodes 43P, 43Q includes a main body portion that is rectangular in a plan view and a protrusion portion that protrudes from the main body portion toward the third substrate side surface 25. The main body portion has a rectangular shape with the X direction as the longitudinal direction and the Y direction as the lateral direction. The protrusion portion is formed in a curved shape in a plan view. The protrusion portion of the outer back surface electrode 43P is formed closer to the second inner back surface electrode 42P within the main body portion. The protrusion portion of the outer back surface electrode 43Q is formed closer to the second inner back surface electrode 42Q within the main body portion. The protruding portions of the outer backside electrodes 43P, 43Q have the same size and shape as the protruding portions of the first inner backside electrodes 41P, 41Q and the second inner backside electrodes 42P, 42Q.

[0072] The rear surface end electrodes 44P and 44Q are formed to have the same size and shape. In one example, the rear surface end electrodes 44P and 44Q are rectangular in shape with the X direction as the longitudinal direction and the Y direction as the lateral direction.

[0073] The multiple back surface electrodes 40 include an element back surface electrode 45. The element back surface electrode 45 is arranged at a distance from the first inner back surface electrodes 41P, 41Q, the second inner back surface electrodes 42P, 42Q, and the end back surface electrodes 44P, 44Q. The element back surface electrode 45 is arranged closer to the fourth substrate side surface 26 than each of the first inner back surface electrodes 41P, 41Q and the second inner back surface electrodes 42P, 42Q.

[0074] In one example, the element back surface electrode 45 is formed in a symmetrical shape with respect to the central virtual line CL in a plan view. In a plan view, the element back surface electrode 45 is formed in a convex shape. More specifically, the element back surface electrode 45 includes a strip-shaped main body extending in the X direction and a protrusion protruding from the center of the main body in the X direction toward the third substrate side surface 25. The protrusion is formed in a rectangular shape with the X direction as the longitudinal direction and the Y direction as the lateral direction in a plan view. End back surface electrodes 44P, 44Q are distributed and arranged on both sides of the protrusion in the X direction.

[0075] 2 and 3 , the semiconductor light emitting device 10 includes a plurality of through-wires 50 that penetrate the substrate 20 in its thickness direction (Z direction). The plurality of through-wires 50 are individually connected to a plurality of front electrodes 30. The plurality of through-wires 50 are also individually connected to a plurality of back electrodes 40. Therefore, the plurality of front electrodes 30 and the plurality of back electrodes 40 are individually electrically connected by the plurality of through-wires 50. The plurality of through-wires 50 are formed of a material containing Cu, for example. Note that the constituent material of the plurality of through-wires 50 is not limited to Cu, and may contain at least one of Ti, W, and Al.

[0076] 2 and 3 , the plurality of through wires 50 are formed in a columnar shape that fills the through holes for the respective through wires 50 in the substrate 20. The shape of each through wire 50 can be changed as desired. In one example, each through wire 50 may be formed in a cylindrical shape that contacts the side surface that constitutes the through hole for each through wire 50 in the substrate 20. In this case, the cylindrical interior of each through wire 50 may be hollow or may be filled with an insulating material such as epoxy resin.

[0077] The plurality of through wirings 50 include first inner through wirings 51P, 51Q, second inner through wirings 52P, 52Q, outer through wirings 53P, 53Q, and end through wirings 54P, 54Q. In one example, the first inner through wirings 51P, 51Q, second inner through wirings 52P, 52Q, outer through wirings 53P, 53Q, and end through wirings 54P, 54Q are the same size and shape as one another. The first inner through wirings 51P, 51Q, second inner through wirings 52P, 52Q, outer through wirings 53P, 53Q, and end through wirings 54P, 54Q are formed, for example, in an oval shape in a plan view. Note that the shapes of the first inner through wirings 51P, 51Q, second inner through wirings 52P, 52Q, outer through wirings 53P, 53Q, and end through wirings 54P, 54Q in a plan view can be arbitrarily changed. In one example, the first inner through wirings 51P, 51Q, the second inner through wirings 52P, 52Q, the outer through wirings 53P, 53Q, and the end through wirings 54P, 54Q may be, for example, circular, elliptical, polygonal, etc. in a planar view.

[0078] The first inner through wiring 51P is disposed at a position overlapping both the first inner surface electrode 31P and the first inner back surface electrode 41P in a plan view. In a plan view, the longitudinal direction of the oval-shaped first inner through wiring 51P is a direction that intersects with both the X direction and the Y direction. In one example, in a plan view, the longitudinal direction of the first inner through wiring 51P is a direction that inclines toward the third substrate side surface 25 as it approaches the first substrate side surface 23.

[0079] 2, the first inner through wiring 51P is connected to a portion of the first inner surface electrode 31P that is closer to the third substrate side surface 25 in a plan view. As shown in Fig. 3, the first inner through wiring 51P is connected to a portion of the first inner back surface electrode 41P that is closer to the fourth substrate side surface 26 in a plan view.

[0080] The second inner through wiring 52P is disposed at a position overlapping both the second inner surface electrode 32P and the second inner back surface electrode 42P in a plan view. In a plan view, the longitudinal direction of the oval-shaped second inner through wiring 52P intersects with both the X direction and the Y direction. In one example, in a plan view, the longitudinal direction of the second inner through wiring 52P is parallel to the longitudinal direction of the first inner through wiring 51P.

[0081] 2, the second inner through wiring 52P is connected, in plan view, to a portion of the second inner surface electrode 32P that is closer to the first substrate side surface 23 and the third substrate side surface 25. As shown in Fig. 3, the second inner through wiring 52P is connected, in plan view, to a portion of the second inner back surface electrode 42P that is closer to the fourth substrate side surface 26.

[0082] The outer through wiring 53P is disposed at a position overlapping both the outer front surface electrode 33P and the outer back surface electrode 43P in a plan view. In a plan view, the longitudinal direction of the oval-shaped outer through wiring 53P intersects with both the X direction and the Y direction. In one example, in a plan view, the longitudinal direction of the outer through wiring 53P is parallel to the longitudinal direction of the first inner through wiring 51P.

[0083] 2, the outer through wiring 53P is connected to a portion of the outer surface electrode 33P that is closer to the first substrate side surface 23 and the third substrate side surface 25 in a plan view. As shown in Fig. 3, the outer through wiring 53P is connected to a portion of the outer back surface electrode 43P that is closer to the second substrate side surface 24 and the fourth substrate side surface 26 in a plan view.

[0084] The end through wiring 54P is disposed at a position overlapping both the end surface electrode 34P and the end back surface electrode 44P in plan view. In plan view, the longitudinal direction of the oval end through wiring 54P is the Y direction. In other words, the longitudinal direction of the end through wiring 54P is a direction different from the longitudinal direction of the first inner through wiring 51P.

[0085] The first inner through wiring 51Q, the second inner through wiring 52Q, the outer through wiring 53Q, and the end through wiring 54Q are arranged symmetrically with respect to the central virtual line CL with respect to the first inner through wiring 51P, the second inner through wiring 52P, the outer through wiring 53P, and the end through wiring 54P. Therefore, the longitudinal directions of the oval first inner through wiring 51Q, the second inner through wiring 52Q, and the outer through wiring 53Q are inclined toward the third substrate side surface 25 as they approach the second substrate side surface 24.

[0086] The first inner through wiring 51Q is disposed at a position overlapping both the first inner surface electrode 31Q and the first inner back surface electrode 41Q. As shown in Fig. 2, the first inner through wiring 51Q is connected to a portion of the first inner surface electrode 31Q closer to the third substrate side surface 25 in a plan view. As shown in Fig. 3, the first inner through wiring 51Q is connected to a portion of the first inner back surface electrode 41Q closer to the fourth substrate side surface 26 in a plan view.

[0087] The second inner through wiring 52Q is disposed at a position overlapping both the second inner surface electrode 32Q and the second inner back surface electrode 42Q. As shown in Fig. 2, the second inner through wiring 52Q is connected to a portion of the second inner surface electrode 32Q that is closer to the second substrate side surface 24 and the third substrate side surface 25 in a plan view. As shown in Fig. 3, the second inner through wiring 52Q is connected to a portion of the second inner back surface electrode 42Q that is closer to the fourth substrate side surface 26 in a plan view.

[0088] The outer through wiring 53Q is disposed at a position overlapping both the outer surface electrode 33Q and the outer back surface electrode 43Q. As shown in Fig. 2, the outer through wiring 53Q is connected to a portion of the outer surface electrode 33Q that is closer to the second substrate side surface 24 and the third substrate side surface 25 in a plan view. As shown in Fig. 3, the outer through wiring 53Q is connected to a portion of the outer back surface electrode 43Q that is closer to the first substrate side surface 23 and the fourth substrate side surface 26 in a plan view.

[0089] The plurality of through wires 50 includes an element through wire 55. The element through wire 55 is provided at the center of the substrate 20 in the X direction. In plan view, the element through wire 55 is disposed at a position overlapping both the edge light emitting element 70 and the submount substrate 90. The element through wire 55 is formed in a rectangular shape with the X direction as the longitudinal direction and the Y direction as the lateral direction in plan view.

[0090] The element through wiring 55 may be formed of a plurality of through wirings. In one example, the plurality of through wirings constituting the element through wiring 55 may have the same configuration as the through wiring 50.

[0091] As shown in Fig. 3, the semiconductor light-emitting device 10 includes a back surface resist 60 that covers the multiple back surface electrodes 40. The back surface resist 60 is a solder resist and is formed of, for example, an insulating material. The insulating material may be, for example, an epoxy resin. In Fig. 3, the portions of the first inner back surface electrodes 41P, 41Q, the second inner back surface electrodes 42P, 42Q, the outer back surface electrodes 43P, 43Q, and the end back surface electrodes 44P, 44Q that overlap with the back surface resist 60 are indicated by dashed lines.

[0092] The rear surface resist 60 covers most of the rear surface 22 of the substrate. The rear surface resist 60 includes openings corresponding to the plurality of rear surface electrodes 40. The openings of the rear surface resist 60 include a plurality of (six in the first embodiment) first openings 61, a plurality of (two in the first embodiment) second openings 62, and a plurality of (six in the first embodiment) third openings 63.

[0093] The first openings 61 are formed to individually expose the first inner back surface electrodes 41P, 41Q, the second inner back surface electrodes 42P, 42Q, and the outer back surface electrodes 43P, 43Q. The first openings 61 extend in the Y direction and are formed to expose the respective protruding portions of the first inner back surface electrodes 41P, 41Q, the second inner back surface electrodes 42P, 42Q, and the outer back surface electrodes 43P, 43Q.

[0094] The second openings 62 are formed to individually expose the end rear surface electrodes 44P, 44Q. The second openings 62 are provided at both ends in the X direction of the rear surface resist 60. The second openings 62 extend in the X direction in a plan view.

[0095] The third openings 63 are formed so as to expose the element back surface electrode 45. The third openings 63 are formed in an elliptical shape with the Y direction as the longitudinal direction in a plan view. The third openings 63 are arranged spaced apart from each other in the X direction.

[0096] The third openings 63 include four third openings 63A each having an elliptical shape that is long in the Y direction and two third openings 63B each having an elliptical shape that is short in the Y direction. The four third openings 63A are provided so as to expose the protruding portion of the element back surface electrode 45. The two third openings 63B are distributed and disposed on both sides of the four third openings 63A in the X direction.

[0097] [Detailed Shapes and Positional Relationships of Inner Surface Electrodes, Outer Surface Electrodes, and End Surface Electrodes] Next, the detailed shapes and positional relationships of the first inner surface electrodes 31P, 31Q, the second inner surface electrodes 32P, 32Q, the outer surface electrodes 33P, 33Q, and the end surface electrodes 34P, 34Q will be described. Figure 7 is an enlarged plan view of the first inner surface electrode 31P, the second inner surface electrode 32P, the outer surface electrode 33P, and the end surface electrode 34P and their surroundings. As described above, the first inner surface electrode 31Q, the second inner surface electrode 32Q, the outer surface electrode 33Q, and the end surface electrode 34Q are symmetrical with respect to the first inner surface electrode 31P, the second inner surface electrode 32P, the outer surface electrode 33P, and the end surface electrode 34P with respect to the virtual center line CL, and therefore, description thereof will be omitted.

[0098] 7, the first inner surface electrode 31P is formed in a generally rectangular shape with its longitudinal direction in the Y direction and its lateral direction in the X direction. The first inner surface electrode 31P extends in the Y direction. The first inner surface electrode 31P is disposed in a position overlapping in the X direction with both the first inner element electrode 81P and the second inner element electrode 82P of the edge-emitting element 70 in a plan view.

[0099] The first inner surface electrode 31P includes a first inner narrow portion 31A and a first inner wide portion 31B having a width dimension (size in the X direction) larger than that of the first inner narrow portion 31A. The first inner narrow portion 31A constitutes a portion of the first inner surface electrode 31P that is closer to the edge light emitting element 70 in the Y direction. The width dimension (size in the X direction) of the first inner narrow portion 31A is larger than the width dimension (size in the X direction) of the first inner element electrode 81P.

[0100] The first inner wide portion 31B constitutes the portion of the first inner surface electrode 31P that is farthest from the edge light emitting element 70 in the Y direction. It can be said that the first inner wide portion 31B constitutes the end portion of the first inner surface electrode 31P that is closer to the third substrate side surface 25 (see FIG. 2). The first inner wide portion 31B is formed to protrude from the first inner narrow portion 31A toward the first substrate side surface 23 (see FIG. 2). A first inner through wiring 51P is connected to the first inner wide portion 31B.

[0101] In plan view, the first inner wide portion 31B includes an inclined side 31C. The inclined side 31C is formed at the end of the first inner wide portion 31B that protrudes from the first inner narrow portion 31A and is closer to the edge light emitting element 70 in the Y direction. The inclined side 31C is inclined toward the third substrate side surface 25 as it approaches the first substrate side surface 23 (second inner surface electrode 32P). The inclined side 31C is inclined from an end side 31D of the first inner wide portion 31B in the X direction toward the center of the substrate surface 21 (the virtual center line CL) in the X direction, in a direction approaching the first inner light-emitting portion 81A of the edge light emitting element 70. Here, the end side 31D is the end side closest to the second inner surface electrode 32P of both end sides of the first inner wide portion 31B in the X direction, and extends in the Y direction in plan view.

[0102] In plan view, the second inner surface electrode 32P is disposed closer to the first substrate side surface 23 than the second inner element electrode 82P of the edge-emitting element 70. In plan view, the second inner surface electrode 32P is disposed in a position facing the outer element electrode 83P of the edge-emitting element 70 in the Y direction.

[0103] The second inner surface electrode 32P includes a second inner narrow portion 32A, a second inner wide portion 32B having a width dimension (size in the X direction) larger than that of the second inner narrow portion 32A, and a second inner inclined portion 32C connecting the second inner narrow portion 32A and the second inner wide portion 32B.

[0104] The second inner narrow width portion 32A constitutes a portion of the second inner surface electrode 32P that is closer to the edge light emitting element 70 in the Y direction. In one example, the second inner narrow width portion 32A constitutes an end portion of the second inner surface electrode 32P that is closer to the edge light emitting element 70. In plan view, the second inner narrow width portion 32A is disposed opposite the outer element electrode 83P of the edge light emitting element 70 in the Y direction. More specifically, in plan view, the second inner narrow width portion 32A faces a portion of the outer element electrode 83P that is closer to the second inner element electrode 82P. In Y direction view, the second inner narrow width portion 32A is positioned closer to the first inner surface electrode 31P than the outer surface electrode 33P.

[0105] The width of the second inner narrow portion 32A is smaller than the width of the first inner narrow portion 31A of the first inner surface electrode 31P. The width of the second inner narrow portion 32A is smaller than the width (size in the X direction) of the element electrode 80 of the edge-emitting element 70.

[0106] The second inner wide portion 32B constitutes the portion of the second inner surface electrode 32P far from the end surface light emitting element 70. In one example, the second inner wide portion 32B constitutes the end of the second inner surface electrode 32P in the Y direction that is farther from the end surface light emitting element 70. When viewed in the Y direction, the second inner wide portion 32B is positioned closer to the first substrate side surface 23 (outer surface electrode 33P) than the second inner narrow portion 32A. In a plan view, the second inner wide portion 32B is positioned opposite both the outer element electrode 83P and the end element electrode 84P of the end surface light emitting element 70 in the Y direction. In a plan view, the second inner wide portion 32B is positioned opposite the portion of the outer element electrode 83P closer to the end element electrode 84P in the Y direction. The second inner wide portion 32B is positioned adjacent to the first inner wide portion 31B in the X direction.

[0107] The width dimension (size in the X direction) of the second inner wide portion 32B is at least twice the width dimension of the second inner narrow portion 32A. In one example, the width dimension of the second inner wide portion 32B is approximately three times the width dimension of the second inner narrow portion 32A. The width dimension of the second inner wide portion 32B is larger than the width dimension of the first inner narrow portion 31A. The width dimension of the second inner wide portion 32B is larger than the width dimension of the first inner wide portion 31B. The second inner wide portion 32B includes end edges 32F and 32G. The end edge 32F is the end edge closer to the first inner surface electrode 31P of both end edges of the second inner wide portion 32B in the X direction. The end edge 32G is the end edge closer to the outer surface electrode 33P of both end edges of the second inner wide portion 32B in the X direction. The end edges 32F and 32G extend in the Y direction in a plan view.

[0108] The second inner inclined portion 32C is inclined toward the third substrate side surface 25 as it approaches the first substrate side surface 23. In other words, the second inner inclined portion 32C is inclined away from the edge light emitting element 70 as it approaches the outer surface electrode 33P. The width dimension of the second inner inclined portion 32C (the size in a direction perpendicular to the inclination direction of the second inner inclined portion 32C in a plan view) is larger than the width dimension of the second inner narrow portion 32A. The width dimension of the second inner inclined portion 32C is larger than the width dimension of the second inner wide portion 32B.

[0109] The second inner inclined portion 32C includes an inclined side 32D close to the first inner surface electrode 31P and an inclined side 32E close to the outer surface electrode 33P in a plan view. The inclined side 32D is located adjacent to the inclined side 31C of the first inner surface electrode 31P in the X direction. The inclined side 32D inclines in a direction approaching the light-emitting portion 80A corresponding to the second inner element electrode 82P of the edge light-emitting element 70 as it moves from the end side 32F toward the center of the substrate surface 21 in the X direction. The inclination direction of the inclined side 32D is the same as the inclination direction of the inclined side 31C. In a plan view, the inclined side 32D and the inclined side 31C are parallel. In one example, the length of the inclined side 32D is equal to the length of the inclined side 31C.

[0110] The inclined side 32E is inclined in the X direction from the end side 32G toward the center (imaginary center line CL) of the substrate surface 21, and in the X direction, toward the second inner light-emitting portion 82A. The inclination direction of the inclined side 32E is the same as the inclination direction of the inclined side 32D. In a plan view, the inclined side 32E and the inclined side 32D are parallel. The length of the inclined side 32E is longer than the length of the inclined side 32D.

[0111] In this way, the second inner inclined portion 32C is formed as an inclined region including an inclined edge 32D extending toward the center of the substrate surface 21 more than the end edge 32F, and an inclined edge 32E extending toward the center of the substrate surface 21 more than the end edge 32G.

[0112] The second inner through wiring 52P is disposed at a position overlapping both the second inner wide portion 32B and the second inner inclined portion 32C. In one example, the longitudinal direction of the oval-shaped second inner through wiring 52P is parallel to the extension direction of the second inner inclined portion 32C.

[0113] In plan view, the outer surface electrode 33P is disposed closer to the first substrate side surface 23 than the outer element electrode 83P of the edge light emitting element 70. In plan view, the outer surface electrode 33P is disposed in a position facing the end element electrode 84P of the edge light emitting element 70 in the Y direction.

[0114] The outer surface electrode 33P includes a first outer end 33A close to the edge-emitting element 70, a second outer end 33B far from the edge-emitting element 70, and an outer inclined portion 33C connecting the first outer end 33A and the second outer end 33B.

[0115] The first outer end 33A is located adjacent to the second inner narrow portion 32A of the second inner surface electrode 32P in the X direction. The first outer end 33A is located closer to the first substrate side surface 23 in the X direction than the outer element electrode 83P of the edge light emitting element 70. The first outer end 33A is located opposite the edge element electrode 84P of the edge light emitting element 70 in the Y direction in a plan view. When viewed from the Y direction, the first outer end 33A is located at a position overlapping both the second inner wide portion 32B and the second inner inclined portion 32C of the second inner surface electrode 32P.

[0116] The first outer end portion 33A includes end sides 33H and 33I extending in the Y direction in a plan view. The end side 33H is the end side of both X-direction sides of the first outer end portion 33A that is closer to the second inner surface electrode 32P. The end side 33I is the end side of both X-direction sides of the first outer end portion 33A that is closer to the first substrate side surface 23. The end side 33H is positioned closer to the center of the substrate surface 21 in the X direction than the end side 32G of the second inner surface electrode 32P. The end side 33H is positioned closer to the first substrate side surface 23 than the end side 32F of the second inner surface electrode 32P. The end side 33H is positioned closer to the end side 32F than the center in the X direction between the end sides 32F and 32G of the second inner surface electrode 32P. The end side 33I is positioned closer to the first substrate side surface 23 than the end side 32G of the second inner surface electrode 32P.

[0117] The width dimension (size in the X direction) of the first outer end portion 33A is larger than the width dimension of the first inner narrow portion 31A of the first inner surface electrode 31P. The width dimension of the first outer end portion 33A is larger than the width dimension of the first inner wide portion 31B of the first inner surface electrode 31P. The width dimension of the first outer end portion 33A is larger than the width dimension of the second inner wide portion 32B of the second inner surface electrode 32P.

[0118] The second outer end 33B is provided at a position adjacent to the second inner wide portion 32B of the second inner surface electrode 32P in the X direction. The second outer end 33B is arranged closer to the first substrate side surface 23 than the edge-emitting element 70 in the X direction. In one example, the second outer end 33B is arranged closer to the first substrate side surface 23 than the submount substrate 90 in the X direction.

[0119] The second outer end 33B includes end sides 33F and 33G extending in the Y direction in a plan view. The end side 33F is the end side closer to the second inner surface electrode 32P of both X-direction sides of the second outer end 33B. The end side 33G is the end side closer to the first substrate side surface 23 of both X-direction sides of the second outer end 33B. The end side 33F is positioned closer to the center of the substrate surface 21 in the X direction than the end side 33I of the first outer end 33A. The end side 33F is positioned closer to the end side 33I than the center in the X direction between the end sides 33H and 33I of the first outer end 33A. The end side 33G is positioned closer to the first substrate side surface 23 than the end side 33I of the first outer end 33A.

[0120] The width dimension (size in the X direction) of the second outer end 33B is larger than the width dimension of the first inner narrow portion 31A of the first inner surface electrode 31P. The width dimension of the second outer end 33B is larger than the width dimension of the first inner wide portion 31B of the first inner surface electrode 31P. The width dimension of the second outer end 33B is equal to the width dimension of the second inner wide portion 32B of the second inner surface electrode 32P. Therefore, the width dimension of the second outer end 33B is smaller than the width dimension of the first outer end 33A.

[0121] The outer inclined portion 33C is inclined toward the third substrate side surface 25 as it approaches the first substrate side surface 23. In other words, the outer inclined portion 33C is inclined so as to move away from the edge light emitting element 70 as it approaches the first substrate side surface 23. The width dimension of the outer inclined portion 33C (the size in a direction perpendicular to the inclination direction of the outer inclined portion 33C in a plan view) is smaller than the width dimension of the first outer end portion 33A. The width dimension of the outer inclined portion 33C is smaller than the width dimension of the second outer end portion 33B. The width dimension of the outer inclined portion 33C is larger than the width dimension of the second inner inclined portion 32C of the second inner surface electrode 32P.

[0122] The outer inclined portion 33C includes an inclined side 33D close to the second inner surface electrode 32P and an inclined side 33E close to the first substrate side surface 23 in a plan view. The inclined side 33D is located adjacent to the inclined side 32D of the second inner surface electrode 32P in the X direction. The inclined side 33D is inclined in a direction approaching the outer light-emitting portion 83A of the edge light-emitting element 70 as it moves from the end side 33F toward the center of the substrate surface 21 in the X direction. The inclination direction of the inclined side 33D is the same as the inclination direction of the inclined side 32D. In a plan view, the inclined side 33D and the inclined side 32D are parallel. In one example, the length of the inclined side 33D is equal to the length of the inclined side 32D.

[0123] The inclined side 33E is inclined in the X direction from the end side 33G toward the center of the substrate surface 21 toward the outer light-emitting portion 83A. The inclination direction of the inclined side 33E is the same as the inclination direction of the inclined side 33D. In a plan view, the inclined side 33E and the inclined side 33D are parallel. The length of the inclined side 33E is shorter than the length of the inclined side 33D.

[0124] In this way, the outer inclined portion 33C is formed as an inclined region including an inclined edge 33D extending toward the center of the substrate surface 21 more than the end edge 33F, and an inclined edge 33E extending toward the center of the substrate surface 21 more than the end edge 33G.

[0125] The outer through wiring 53P is disposed at a position overlapping both the second outer end portion 33B and the outer inclined portion 33C in a plan view. In one example, the longitudinal direction of the oval-shaped outer through wiring 53P is parallel to the extension direction of the outer inclined portion 33C.

[0126] The end surface electrode 34P extends in the Y direction in a plan view. The end surface electrode 34P is disposed at a position overlapping the second outer end 33B and the outer inclined portion 33C of the outer surface electrode 33P when viewed from the Y direction. The end surface electrode 34P includes a narrow end portion 34A and a wide end portion 34B that is wider than the narrow end portion 34A.

[0127] The narrow end portion 34A is located opposite the edge light emitting element 70 in the Y direction in a plan view. The narrow end portion 34A extends in the Y direction with a constant width. The width of the narrow end portion 34A is smaller than the width of the first inner narrow portion 31A of the first inner surface electrode 31P. The width of the narrow end portion 34A is smaller than the width of the second inner inclined portion 32C of the second inner surface electrode 32P. The width of the narrow end portion 34A is equal to the width of the second inner narrow portion 32A of the second inner surface electrode 32P. The length (size in the Y direction) of the narrow end portion 34A is larger than the width (size in the Y direction) of the edge light emitting element 70.

[0128] The wide end portion 34B is provided closer to the third substrate side surface 25 than the edge light emitting element 70. A part of the wide end portion 34B is provided in a position overlapping with the outer element electrode 83P when viewed from the X direction.

[0129] The end wide portion 34B includes an end edge 34C extending in the Y direction and an inclined edge 34D that slopes away from the end light emitting portion 84A of the end surface light emitting element 70 as it moves from the end edge 34C toward the first substrate side surface 23.

[0130] The edge 34C is located adjacent to the edge 33I of the first outer end 33A of the outer surface electrode 33P in the X direction. The length of the edge 34C is longer than the length of the edge 33I. When viewed from the Y direction, the edge 34C is located closer to the first substrate side surface 23 than the edge 33F of the second outer end 33B of the outer surface electrode 33P. When viewed from the Y direction, the edge 34C is located closer to the center of the substrate surface 21 in the X direction than the edge 33G of the second outer end 33B.

[0131] The inclined side 34D can also be said to be inclined in the X direction toward the center of the substrate surface 21 and toward the light-emitting section 80A corresponding to the end element electrode 84P. The inclined side 34D is disposed adjacent to the inclined side 33E of the outer inclined portion 33C of the outer surface electrode 33P in the X direction. The length of the inclined side 34D is shorter than the length of the inclined side 33E.

[0132] The end through wiring 54P is arranged at a position overlapping the end wide portion 34B in a plan view. In one example, the end through wiring 54P is arranged closer to the first substrate side surface 23 in the end wide portion 34B.

[0133] [Detailed Wire Connection Configuration] Next, a detailed description will be given of the connection configuration between the first inner surface electrodes 31P, 31Q, the second inner surface electrodes 32P, 32Q, the outer surface electrodes 33P, 33Q, and the end surface electrodes 34P, 34Q and the first inner wires 110P, 110Q, the second inner wires 120P, 120Q, the outer wires 130P, 130Q, and the end wires 140P, 140Q. Figure 8 is an enlarged plan view of the first inner wire 110P, the second inner wire 120P, the outer wire 130P, the end wire 140P, and their surroundings. As described above, the first inner wire 110Q, the second inner wire 120Q, the outer wire 130Q, and the end wire 140Q are symmetrical with respect to the first inner wire 110P, the second inner wire 120P, the outer wire 130P, and the end wire 140P, with respect to the central virtual line CL, and therefore their description will be omitted.

[0134] As shown in Fig. 8, the multiple first inner wires 110P are arranged spaced apart from one another in the X direction in a plan view. Each first inner wire 110P includes an element-side bonding portion 111 bonded to the first inner element electrode 81P of the edge-emitting element 70, and a substrate-side bonding portion 112 bonded to the first inner surface electrode 31P. For convenience, both the element-side bonding portion 111 and the substrate-side bonding portion 112 of the first inner wire 110P are indicated by circles in Fig. 8. This also applies to the drawings referenced below and the other wires described below.

[0135] The multiple element-side bonding portions 111 are arranged in the Y direction on the first inner element electrode 81P. When viewed from the Y direction, the multiple element-side bonding portions 111 are arranged in positions where they overlap each other. When viewed from the Y direction, the multiple element-side bonding portions 111 are arranged with partial offsets from each other. Of the multiple element-side bonding portions 111, the element-side bonding portion 111 closest to the third substrate side surface 25 (first inner surface electrode 31P) is arranged closest to the center virtual line CL (the center of the substrate surface 21 in the X direction) of the first inner element electrode 81P. Of the multiple element-side bonding portions 111, the element-side bonding portion 111 farthest from the third substrate side surface 25 (first inner surface electrode 31P) is arranged at the position farthest from the center virtual line CL (the center of the substrate surface 21 in the X direction) of the first inner element electrode 81P. In this way, in a plan view, the arrangement direction of the multiple element-side bonding portions 111 is inclined toward the third substrate side surface 25 (first inner surface electrode 31P) toward the central virtual line CL (the center of the substrate surface 21 in the X direction). Note that the arrangement positions of the multiple element-side bonding portions 111 relative to the first inner element electrode 81P can be changed as desired.

[0136] The multiple substrate-side bonding portions 112 are arranged in a direction intersecting both the X and Y directions in the first inner surface electrode 31P in a plan view. The multiple substrate-side bonding portions 112 are inclined away from the edge-emitting element 70 toward the center virtual line CL (the center of the substrate surface 21 in the X direction). Two adjacent substrate-side bonding portions 112 among the multiple substrate-side bonding portions 112 are arranged so as to partially overlap each other when viewed in the Y direction. Two of the multiple substrate-side bonding portions 112 closer to the first substrate side surface 23 are arranged closer to the first substrate side surface 23 in the X direction than the first inner element electrode 81P. Therefore, in a plan view, the spacing between adjacent first inner wires 110P in the X direction increases with increasing distance from the first inner element electrode 81P. Here, the interval between the first inner wires 110P adjacent to each other in the X direction may be defined as the distance between the first inner wires 110P adjacent to each other in the X direction.

[0137] Of the multiple substrate-side bonding portions 112, two substrate-side bonding portions 112 closer to the center virtual line CL are formed in the first inner wide portion 31B of the first inner surface electrode 31P. Of the multiple substrate-side bonding portions 112, two substrate-side bonding portions 112 closer to the first substrate side surface 23 are formed in the first inner narrow portion 31A. More specifically, of the multiple substrate-side bonding portions 112, the two substrate-side bonding portions 112 closer to the first substrate side surface 23 are formed closer to the first substrate side surface 23 (second inner surface electrode 32P) than the center of the first inner narrow portion 31A in the X direction, and closer to the first inner wide portion 31B than the center of the first inner narrow portion 31A in the Y direction. Note that the arrangement positions of the multiple substrate-side bonding portions 112 relative to the first inner surface electrode 31P can be arbitrarily changed.

[0138] In one example, the lengths of the multiple first inner wires 110P are equal to each other in a plan view. Here, if the difference in length among the multiple first inner wires 110P is, for example, within 10% of the length of a predetermined first inner wire 110P, it can be said that the lengths of the multiple first inner wires 110P are equal to each other. As the predetermined first inner wire 110P, for example, the first inner wire 110P closest to the center virtual line CL is used.

[0139] The second inner wires 120P are arranged spaced apart from one another in the X direction in plan view. The second inner wires 120P are formed to be approximately parallel to one another in plan view. Each second inner wire 120P includes an element-side bonding portion 121 bonded to the second inner element electrode 82P of the edge-emitting element 70 and a substrate-side bonding portion 122 bonded to the second inner surface electrode 32P.

[0140] The element-side bonding portions 121 are aligned in the Y direction while being aligned with one another in the X direction. In one example, the element-side bonding portions 121 are disposed at the center of the second inner element electrode 82P in the X direction. Note that the positions of the element-side bonding portions 121 relative to the second inner element electrode 82P can be changed as desired.

[0141] The multiple substrate-side bonding portions 122 are formed in a portion of the second inner surface electrode 32P that is farther from the edge light emitting element 70 than the center of the second inner surface electrode 32P in the Y direction, in other words, farther from the second inner light-emitting portion 82A. Two of the multiple substrate-side bonding portions 122 are located in the second inner inclined portion 32C, and the remaining two are located in the second inner wide portion 32B. Two adjacent substrate-side bonding portions 122 are located in the second inner inclined portion 32C and the second inner wide portion 32B. In other words, the multiple substrate-side bonding portions 122 are alternately located in the second inner inclined portion 32C and the second inner wide portion 32B. In one example, the distance in the X direction between two substrate-side bonding portions 122 located in the second inner inclined portion 32C is smaller than the diameter of the substrate-side bonding portions 122. In one example, the distance in the X direction between two substrate-side bonding portions 122 located in the second inner wide portion 32B is smaller than the diameter of the substrate-side bonding portions 122.

[0142] The substrate-side bonding portions 122 are arranged closer to the first substrate side surface 23 in the X direction than the element-side bonding portions 121. The substrate-side bonding portions 122 are arranged closer to the first substrate side surface 23 in the X direction than the second inner element electrode 82P.

[0143] In this way, since the positions in the Y direction of two substrate-side joints 122 adjacent to each other in the X direction are different, the lengths of two of the second inner wires 120P adjacent to each other in the X direction are different in plan view. Furthermore, the lengths of the second inner wires 120P may be different in plan view. In plan view, the inclination angle of each second inner wire 120P relative to the Y direction is larger than the inclination angle of each first inner wire 110P relative to the Y direction. The positions of the substrate-side joints 122 relative to the second inner surface electrode 32P can be changed as desired.

[0144] The outer wires 130P are arranged spaced apart from one another in the X direction in a plan view. Each outer wire 130P includes an element-side bonding portion 131 bonded to the outer element electrode 83P of the edge-emitting element 70, and a substrate-side bonding portion 132 bonded to the outer surface electrode 33P.

[0145] The multiple element-side bonding portions 131 are aligned in the Y direction while being aligned with one another in the X direction. In one example, the multiple element-side bonding portions 131 are arranged closer to the end element electrodes 84P of the outer element electrodes 83P. In other words, the multiple element-side bonding portions 131 are arranged so as to be close to the outer surface electrodes 33P in a plan view. Note that the arrangement positions of the multiple element-side bonding portions 131 relative to the outer element electrodes 83P can be changed as desired.

[0146] The plurality of substrate-side bonding portions 132 are arranged closer to the edge light emitting element 70 than the center of the outer surface electrode 33P in the Y direction, in other words, closer to the outer light emitting portion 83A. The plurality of substrate-side bonding portions 132 are also arranged closer to the first substrate side surface 23 than the plurality of element-side bonding portions 131. The plurality of substrate-side bonding portions 132 are also arranged closer to the first substrate side surface 23 than the outer element electrode 83P.

[0147] Of the multiple substrate-side bonding portions 132, two that are closer to the center virtual line CL (the center of the substrate surface 21 in the X direction) in the X direction are positioned closer to the edge light emitting element 70 in the Y direction than the remaining two of the multiple substrate-side bonding portions 132. Of the multiple substrate-side bonding portions 132, two that are closer to the center virtual line CL (the center of the substrate surface 21 in the X direction) in the X direction are positioned so as to partially overlap with each other when viewed from the Y direction. Furthermore, of the multiple substrate-side bonding portions 132, two that are closer to the center virtual line CL (the center of the substrate surface 21 in the X direction) in the X direction are positioned so as to partially overlap with each other when viewed from the X direction. Of the multiple substrate-side bonding portions 132, the substrate-side bonding portion 132 closest to the center virtual line CL is positioned closer to the edge light emitting element 70 in the Y direction than the remaining three.

[0148] Of the multiple board-side joints 132, two closer to the first board side surface 23 in the X direction are aligned with each other in the Y direction and spaced apart from each other in the X direction. Of the multiple board-side joints 132, two closer to the first board side surface 23 in the X direction are arranged on the outer inclined portion 33C. The distance between the two board-side joints 132 closer to the first board side surface 23 in the X direction is greater than the distance between the two central board-side joints 132 in the X direction.

[0149] Due to such an arrangement of the multiple board-side joints 132, the lengths of the multiple outer wires 130P increase in plan view from the center virtual line CL toward the first board side surface 23. In other words, the multiple outer wires 130P include wires of different lengths. It can also be said that the multiple outer wires 130P are made up of wires of different lengths.

[0150] Furthermore, in a plan view, the shortest wire among the multiple outer wires 130P is shorter than the shortest wire among the multiple first inner wires 110P. In a plan view, the second shortest wire among the multiple outer wires 130P is shorter than the shortest wire among the multiple first inner wires 110P. In a plan view, the length of the third shortest wire among the multiple outer wires 130P is equal to the length of the shortest wire among the multiple first inner wires 110P. In a plan view, the longest wire among the multiple outer wires 130P is longer than the shortest wire among the multiple first inner wires 110P. In a plan view, the longest wire among the multiple outer wires 130P is longer than the longest wire among the multiple first inner wires 110P. In one example, the total length of the multiple outer wires 130P in a plan view is shorter than the total length of the multiple first inner wires 110P in a plan view. Since the number of outer wires 130P and first inner wires 110P is the same, it can be said that the average length of the plurality of outer wires 130P in plan view is shorter than the average length of the plurality of first inner wires 110P in plan view.

[0151] The relationship between the average length of the outer wires 130P in a plan view and the average length of the first inner wires 110P in a plan view can be changed as desired. For example, the positions of the board-side joints 112 of the first inner wires 110P may be adjusted so that the average length of the outer wires 130P in a plan view and the average length of the first inner wires 110P in a plan view are approximately equal.

[0152] Furthermore, in a plan view, the shortest wire among the multiple outer wires 130P is shorter than the shortest wire among the multiple second inner wires 120P. In a plan view, the second shortest wire among the multiple outer wires 130P is shorter than the shortest wire among the multiple second inner wires 120P. In a plan view, the third shortest wire among the multiple outer wires 130P is longer than the shortest wire among the multiple second inner wires 120P. On the other hand, in a plan view, the third shortest wire among the multiple outer wires 130P is shorter than the second shortest wire among the multiple second inner wires 120P. In a plan view, the longest wire among the multiple outer wires 130P is longer than the second shortest wire among the multiple second inner wires 120P. In a plan view, the length of the longest wire among the multiple outer wires 130P is equal to the length of the third shortest wire among the multiple second inner wires 120P. Therefore, in a plan view, the longest wire among the multiple outer wires 130P is shorter than the longest wire among the multiple second inner wires 120P. In one example, the total length of the multiple outer wires 130P in a plan view is shorter than the total length of the multiple second inner wires 120P in a plan view. Because the number of outer wires 130P and second inner wires 120P is the same, it can be said that the average length of the multiple outer wires 130P in a plan view is shorter than the average length of the multiple second inner wires 120P in a plan view.

[0153] The relationship between the average length of the outer wires 130P in a plan view and the average length of the second inner wires 120P in a plan view can be changed as desired. For example, the positions of the board-side joints 122 of the second inner wires 120P may be adjusted so that the average length of the outer wires 130P in a plan view and the average length of the second inner wires 120P in a plan view are approximately equal.

[0154] Since the multiple element-side joints 131 are aligned in the X direction while the multiple substrate-side joints 132 are arranged at intervals in the X direction, when viewed in a plane, the spacing between adjacent ones of the multiple outer wires 130P becomes wider as you move from the element-side joints 131 to the substrate-side joints 132.

[0155] In a plan view, the maximum spacing G3 between adjacent wires 130P among the plurality of outer wires 130P is wider than the maximum spacing G1 between adjacent wires 110P among the plurality of first inner wires 110P. In a plan view, the maximum spacing G3 is wider than the maximum spacing G2 between adjacent wires 120P among the plurality of second inner wires 120P. In a plan view, the maximum spacing G3 is wider than the maximum spacing G4 between adjacent wires 140P among the plurality of end wires 140P.

[0156] Here, the maximum gap G3 can be defined as the maximum value of the distance in the X direction between two adjacent outer wires 130P among the multiple outer wires 130P. In the example of Fig. 8, in plan view, the maximum gap G3 is the center-to-center distance between the substrate-side joint portions 132 of the two outer wires 130P that are closer to the first substrate side surface 23 among the multiple outer wires 130P.

[0157] The maximum gap G1 can be defined by the maximum value of the distance in the X direction between two adjacent first inner wires 110P among the multiple first inner wires 110P. In the example of Fig. 8, the maximum value of the distance in the X direction between two second inner wires 120P that are closer to the first substrate side surface 23 among the multiple second inner wires 120P in plan view is the maximum gap G1.

[0158] The maximum gap G2 can be defined by the maximum value of the distance in the X direction between two second inner wires 120P that are adjacent to each other in the X direction among the plurality of second inner wires 120P. In the example of Fig. 8, in plan view, the maximum value of the distance in the X direction between two second inner wires 120P that are central in the X direction among the plurality of second inner wires 120P is the maximum gap G2.

[0159] The maximum gap G4 can be defined by the maximum value of the distance in the Y direction between two adjacent end wires 140P among the multiple end wires 140P. In the example of Fig. 8, the distance in the Y direction between two adjacent end wires 140P among the multiple end wires 140P is equal to each other. Therefore, any one of the distances in the Y direction between two adjacent end wires 140P among the multiple end wires 140P can be set as the maximum gap G4.

[0160] The plurality of end wires 140P are arranged spaced apart from one another in the Y direction in plan view. The plurality of end wires 140P are formed to be approximately parallel to one another in plan view. The plurality of end wires 140P include an element-side bonding portion 141 bonded to the end element electrode 84P of the end-surface light emitting element 70 and a substrate-side bonding portion 142 bonded to the end surface electrode 34P.

[0161] The element-side bonding portions 141 are aligned in the Y direction on the end element electrode 84P. When viewed from the Y direction, the element-side bonding portions 141 are arranged in overlapping positions. When viewed from the Y direction, the element-side bonding portions 141 are arranged with some offset from one another. The element-side bonding portion 141 closest to the third substrate side surface 25 is arranged at the position farthest from the center virtual line CL (the center of the substrate surface 21 in the X direction) on the end element electrode 84P. The element-side bonding portion 141 farthest from the third substrate side surface 25 is arranged at the position closest to the center virtual line CL (the center of the substrate surface 21 in the X direction) on the end element electrode 84P. Thus, in a plan view, the arrangement direction of the element-side bonding portions 141 is inclined toward the fourth substrate side surface 26 as it approaches the center virtual line CL (the center of the substrate surface 21 in the X direction). The positions of the element-side bonding portions 141 relative to the end element electrodes 84P can be changed arbitrarily.

[0162] The multiple substrate-side bonding portions 142 are bonded to the narrow end portions 34A of the end surface electrodes 34P. The multiple substrate-side bonding portions 142 are aligned in the Y direction while being aligned with one another in the X direction. The width of the narrow end portions 34A is slightly larger than the diameter of the substrate-side bonding portions 142. In one example, the width of the narrow end portions 34A is larger than the diameter of the substrate-side bonding portions 142, but is not more than twice the diameter of the substrate-side bonding portions 142.

[0163] The lengths of the end wires 140P in plan view are different from one another because the positions of the element-side bonding portions 141 in the X direction are different from one another. Note that the lengths of the end wires 140P can be changed arbitrarily and may be, for example, equal to one another.

[0164] In a plan view, the shortest wire among the multiple outer wires 130P is shorter than the shortest wire among the multiple end wires 140P. In a plan view, the second shortest wire among the multiple outer wires 130P is equal to the shortest wire among the multiple end wires 140P. In a plan view, the second shortest wire among the multiple outer wires 130P is shorter than the second shortest wire among the multiple end wires 140P. In a plan view, the third shortest wire among the multiple outer wires 130P is longer than the longest wire among the multiple end wires 140P. Therefore, in a plan view, the longest wire among the multiple outer wires 130P is longer than the longest wire among the multiple end wires 140P. In one example, the total length of the multiple outer wires 130P in a plan view is longer than the total length of the multiple end wires 140P in a plan view. Because the number of outer wires 130P and end wires 140P is the same, the average length of the outer wires 130P in plan view is longer than the average length of the end wires 140P in plan view. Therefore, the average length of the end wires 140P in plan view is shorter than the average length of the first inner wires 110P in plan view and shorter than the average length of the second inner wires 120P in plan view.

[0165] [Operation] The operation of the semiconductor light-emitting device 10 of this embodiment will be described. FIG. 9 is a plan view schematically illustrating the internal structure of a semiconductor light-emitting device 10X of a comparative example. In the semiconductor light-emitting device 10X of the comparative example, the substrate 20, the edge light-emitting element 70, and the submount substrate 90 are similar to those of the first embodiment, but the configuration of the multiple surface electrodes and multiple wires is different. Hereinafter, the surface electrodes of the semiconductor light-emitting device 10X of the comparative example will be referred to as "first inner surface electrodes 31PX, 31QX," "second inner surface electrodes 32PX, 32QX," "outer surface electrodes 33PX, 33QX," and "end surface electrodes 34PX, 34QX." Furthermore, the wires of the semiconductor light-emitting device 10X of the comparative example will be referred to as "first inner wires 110PX, 110QX," "second inner wires 120PX, 120QX," "outer wires 130PX, 130QX," and "end wires 140PX, 140QX."

[0166] In the semiconductor light-emitting device 10X of the comparative example, as in the first embodiment, the multiple surface electrodes and multiple wires are all symmetrical with respect to the central virtual line CL, and therefore only the first inner surface electrode 31PX, the second inner surface electrode 32PX, the outer surface electrode 33PX, and the end surface electrode 34PX, as well as the first inner wire 110PX, the second inner wire 120PX, the outer wire 130PX, and the end wire 140PX will be described, and descriptions of the first inner surface electrode 31QX, the second inner surface electrode 32QX, the outer surface electrode 33QX, and the end surface electrode 34QX, as well as the first inner wire 110QX, the second inner wire 120QX, the outer wire 130QX, and the end wire 140QX will be omitted.

[0167] Furthermore, in the semiconductor light emitting device 10X of the comparative example, the shape of the through wiring is circular in a plan view. Therefore, the through wirings of the semiconductor light emitting device 10X of the comparative example are referred to as "first inner through wirings 51PX, 51QX," "second inner through wirings 52PX, 52QX," "outer through wirings 53PX, 53QX," and "end through wirings 54PX, 54QX." Detailed description of these through wirings will be omitted.

[0168] As shown in FIG. 9 , the first inner surface electrode 31PX, the second inner surface electrode 32PX, and the outer surface electrode 33PX are arranged in this order from the center of the substrate surface 21 toward the first substrate side surface 23 in the X direction. Both the first inner surface electrode 31PX and the second inner surface electrode 32PX are rectangular in shape, with the Y direction as the longitudinal direction and the X direction as the transverse direction in a plan view. In a plan view, the first inner surface electrode 31PX is positioned so as to overlap the first inner element electrode 81P and the second inner element electrode 82P of the edge light emitting element 70 in the X direction. The second inner surface electrode 32PX is positioned so as to overlap the outer element electrode 83P and the end element electrode 84P of the edge light emitting element 70 in the X direction. The outer surface electrode 33PX is positioned closer to the first substrate side surface 23 than the edge light emitting element 70.

[0169] Therefore, the distance between the outer element electrode 83P and the outer surface electrode 33PX is greater than both the distance between the first inner element electrode 81P and the first inner surface electrode 31PX and the distance between the second inner element electrode 82P and the second inner surface electrode 32PX. That is, in a planar view, the outer wires 130PX tend to be longer than the first inner wires 110PX and the second inner wires 120PX. Furthermore, the outer surface electrode 33PX includes an outer narrow portion 33PAX. Parts of the substrate-side bonding portions 132PX of the outer wires 130PX are located in the outer narrow portion 33PAX. Because the outer wires 130PX tend to be long and are bonded to the narrow portions of the outer surface electrode 33PX, the resistance component of the conductive path between the outer element electrode 83P and the outer through-hole wiring 53PX increases.

[0170] Furthermore, the substrate-side bonding portions 142PX of the plurality of end wires 140PX are located near the end through-wirings 54PX and in the wide portions of the end surface electrodes 34PX, thereby reducing the resistance component of the conductive paths between the end element electrodes 84P and the end through-wirings 54PX.

[0171] Furthermore, in a plan view, the maximum spacing GX3 between adjacent wires 130PX in the X direction is equal to or smaller than the maximum spacing GX1 between adjacent wires 110PX in the X direction, the maximum spacing GX3 is equal to or smaller than the maximum spacing GX2 between adjacent wires 120PX in the X direction, and the maximum spacing GX3 is equal to or smaller than the maximum spacing GX4 between adjacent wires 140PX in the X direction.

[0172] Here, the maximum interval GX1 is the maximum value of the interval in the X direction between the first inner wire 110PX closest to the first substrate side surface 23 and the first inner wire 110PX second closest to the first substrate side surface 23 among the multiple first inner wires 110PX in the X direction in a plan view. The maximum interval GX2 is the maximum value of the interval in the X direction between the second inner wire 120PX closest to the first substrate side surface 23 and the second inner wire 120PX second closest to the first substrate side surface 23 among the multiple second inner wires 120PX in the X direction in a plan view. The maximum interval GX3 is the maximum value of the interval in the X direction between the outer wire 130P closest to the center of the substrate surface 21 and the outer wire 130P second closest to the center of the substrate surface 21 among the multiple first inner wires 110PX in the X direction in a plan view. The maximum spacing GX4 is, in a planar view, the maximum value of the spacing in the Y direction between the end wire 140P closest to the third substrate side surface 25 among the multiple end wires 140PX and the end wire 140P second closest to the third substrate side surface 25.

[0173] Thus, in the comparative semiconductor light emitting device 10X, there is a large difference between the resistance component of the conductive path between the outer element electrode 83P and the outer through-hole wiring 53PX (hereinafter referred to as the "outer conductive path of the comparative example"), the resistance component of the conductive path between the first inner element electrode 81P and the first inner through-hole wiring 51PX (hereinafter referred to as the "first inner conductive path of the comparative example"), the resistance component of the conductive path between the second inner element electrode 82P and the second inner through-hole wiring 52PX (hereinafter referred to as the "second inner conductive path of the comparative example"), and the resistance component of the conductive path between the end element electrode 84P and the end through-hole wiring 54PX (hereinafter referred to as the "end conductive path of the comparative example").

[0174] As an example, the following describes the simulation results of the resistance components of each conductive path when the comparative semiconductor light-emitting device 10X is driven at 10 MHz and 100 MHz. When the comparative semiconductor light-emitting device 10X is driven at 10 MHz, if the resistance component of the comparative outer conductive path is taken as 100%, the resistance component of the comparative first inner conductive path is 81%, the resistance component of the comparative second inner conductive path is 87%, and the resistance component of the comparative end conductive path is 80%. When the comparative semiconductor light-emitting device 10X is driven at 100 MHz, the resistance components of each conductive path are the same as when driven at 10 MHz. Thus, the difference in resistance components between the comparative outer conductive path, first inner conductive path, second inner conductive path, and end conductive path was up to 20%.

[0175] Here, the resistance component of the conductive path includes the resistance value in the conductive path and the resistance component due to the inductance in the conductive path. The resistance component of a conductive path including multiple wires 100 can be adjusted by the number of wires 100, the length of the wires 100, the spacing between two adjacent wires 100, etc. In general, reducing the number of wires 100 increases the resistance value in the conductive path, and increasing the number of wires 100 decreases the resistance value in the conductive path. Furthermore, increasing the length of the wires 100 increases the resistance component in the conductive path, and shortening the length of the wires 100 decreases the resistance component in the conductive path. The length of the wires 100 can be adjusted by the wire height, bonding position, etc. Furthermore, increasing the spacing between two adjacent wires 100 decreases the mutual inductance in the wires 100, thereby decreasing the resistance component in the conductive path. On the other hand, narrowing the spacing between two adjacent wires 100 increases the mutual inductance in the wires 100, thereby increasing the resistance component in the conductive path. In this way, the difference in resistance components among the plurality of conductive paths can be reduced by adjusting the number of wires 100, the length of the wires 100, the spacing between the wires 100, and a combination thereof.

[0176] In the semiconductor light-emitting device 10 of the first embodiment, when viewed in a plane, the maximum spacing G3 between adjacent wires 130P among the multiple outer wires 130P is wider than the maximum spacing G1 between adjacent wires 110P among the multiple first inner wires 110P, wider than the maximum spacing G2 between adjacent wires 120P among the multiple second inner wires 120P, and wider than the maximum spacing G4 between adjacent wires 140P among the multiple end wires 140P.

[0177] Furthermore, the outer surface electrode 33P includes a first outer end 33A having a width dimension (size in the X direction) larger than the second inner narrow width portion 32A of the second inner surface electrode 32P, and the substrate-side joint portion 142 of the outer wire 130P is disposed at the first outer end 33A. In addition, the first outer end 33A is disposed closer to the outer element electrode 83P than the outer surface electrode 33PX of the semiconductor light-emitting device 10X of the comparative example. Therefore, the resistance component of the conductive path from the outer element electrode 83P to the outer through-hole wiring 53P (hereinafter referred to as the "outer conductive path of the first embodiment") is likely to be smaller than that of the semiconductor light-emitting device 10X of the comparative example.

[0178] On the other hand, the substrate-side bonding portions 112 of two of the multiple first inner wires 110P are arranged in the first inner narrow portion 31A of the first inner surface electrode 31P. Also, three of the multiple first inner wires 110P are arranged on a side farther from the end-face light emitting element 70 (closer to the third substrate side surface 25) than the center of the first inner surface electrode 31P in the Y direction. As such, the multiple first inner wires 110P are each long and include a portion bonded to the narrow portion of the first inner surface electrode 31P, so the resistance component of the conductive path from the first inner element electrode 81P to the first inner through wiring 51P (hereinafter referred to as the "first inner conductive path of the first embodiment") is likely to be large compared to the semiconductor light emitting device 10X of the comparative example.

[0179] Furthermore, the multiple second inner wires 120P are arranged on a side farther from the end surface light emitting element 70 (closer to the third substrate side surface 25) than the center of the second inner surface electrode 32P in the Y direction. In addition, the maximum spacing G2 between adjacent second inner wires 120P is narrower than the maximum spacing GX2 between adjacent second inner wires 120PX in the semiconductor light emitting device 10X of the comparative example. Therefore, compared to the semiconductor light emitting device 10X of the comparative example, the resistance component of the conductive path from the second inner element electrode 82P to the second inner through wiring 52P (hereinafter referred to as the "second inner conductive path of the first embodiment") is likely to be larger.

[0180] Furthermore, the substrate-side bonding portions 142 of the plurality of end wires 140P are arranged in the end narrow portions 34A of the end surface electrodes 34P. Therefore, compared with the end wires 140PX of the semiconductor light-emitting device 10X of the comparative example, the length of the plurality of end wires 140P is longer, and the resistance value of the end narrow portions 34A is greater. Therefore, compared with the semiconductor light-emitting device 10X of the comparative example, the resistance component of the conductive path from the end element electrode 84P to the end through-wiring 54P (hereinafter, "end conductive path of the first embodiment") is likely to be larger.

[0181] In this way, the resistance component of the outer conductive path in the first embodiment is reduced, while the resistance components of the first inner conductive path, the second inner conductive path, and the end conductive path in the first embodiment are increased, so that the difference in resistance components of the outer conductive path, the first inner conductive path, the second inner conductive path, and the end conductive path in the first embodiment can be reduced.

[0182] As an example, the following describes the simulation results of the resistance components in each conductive path when the semiconductor light emitting device 10 of the first embodiment is driven at 10 MHz and 100 MHz.

[0183] When the semiconductor light emitting device 10 was driven at 10 MHz, assuming that the resistance component of the outer conductive path of the first embodiment was 100%, the resistance component of the first inner conductive path of the first embodiment was 95%, the resistance component of the second inner conductive path of the first embodiment was 99%, and the resistance component of the end conductive path of the first embodiment was 92%. When the semiconductor light emitting device 10 was driven at 100 MHz, assuming that the resistance component of the outer conductive path of the first embodiment was 100%, the resistance component of the first inner conductive path of the first embodiment was 94%, the resistance component of the second inner conductive path of the first embodiment was 98%, and the resistance component of the end conductive path of the first embodiment was 91%. In this way, the difference in resistance components among the outer conductive path, first inner conductive path, second inner conductive path, and end conductive path of the first embodiment can be kept within a maximum of 10%.

[0184] [Effects] The semiconductor light-emitting device 10 of this embodiment provides the following effects. The following effects will be described using the first inner element electrode 81P, the second inner element electrode 82P, the outer element electrode 83P, and the end element electrode 84P of the edge light-emitting element 70, the first inner surface electrode 31P, the second inner surface electrode 32P, the outer surface electrode 33P, and the end surface electrode 34P, and the first inner wire 110P, the second inner wire 120P, the outer wire 130P, and the end wire 140P. However, similar effects can also be obtained using the first inner element electrode 81Q, the second inner element electrode 82Q, the outer element electrode 83Q, and the end element electrode 84Q of the edge light-emitting element 70, the first inner surface electrode 31Q, the second inner surface electrode 32Q, the outer surface electrode 33Q, and the end surface electrode 34Q, and the first inner wire 110Q, the second inner wire 120Q, the outer wire 130Q, and the end wire 140Q.

[0185] (1-1) A semiconductor light-emitting device 10 includes a substrate 20 having a substrate front surface 21 and a substrate back surface 22, an edge light-emitting element 70 disposed on the substrate 20 and having a plurality of light-emitting portions 80A arranged in the X direction (first direction) in a plan view, a plurality of surface electrodes 30 formed on the substrate front surface 21 and spaced apart from one another, and a plurality of wires 100 electrically connecting the plurality of light-emitting portions 80A to the plurality of surface electrodes 30. The plurality of light-emitting portions 80A include a first inner light-emitting portion 81A provided with a first inner element electrode 81P and an outer light-emitting portion 83A provided with an outer element electrode 83P. The plurality of surface electrodes 30 include a first inner surface electrode 31P electrically connected to the first inner element electrode 81P and an outer surface electrode 33P electrically connected to the outer element electrode 83P. The plurality of wires 100 includes a plurality of first inner wires 110P that electrically connect the first inner element electrode 81P and the first inner surface electrode 31P, and a plurality of outer wires 130P that electrically connect the outer element electrode 83P and the outer surface electrode 33P. In a plan view, a maximum distance G3 between adjacent ones of the plurality of outer wires 130P in the X direction is wider than a maximum distance G1 between adjacent ones of the plurality of first inner wires 110P in the X direction.

[0186] With this configuration, the resistance component of the outer wire 130P can be reduced by widening the maximum spacing G3 between adjacent outer wires 130P in the X direction. This reduces the difference between the resistance component of the conductive path between the outer element electrode 83P and the outer surface electrode 33P via the outer wire 130P and the resistance component of the conductive path between the first inner element electrode 81P and the first inner surface electrode 31P via the first inner wire 110P. This reduces the variation in the pulse width of the light emitted by the edge-emitting element 70 when a voltage is applied.

[0187] (1-2) The semiconductor light-emitting device 10 includes a substrate 20 having a substrate front surface 21 and a substrate back surface 22, an edge light-emitting element 70 disposed on the substrate 20 and having a plurality of light-emitting portions 80A arranged in the X direction (first direction) in a plan view, a plurality of surface electrodes 30 formed on the substrate front surface 21 and spaced apart from one another, and a plurality of wires 100 electrically connecting the plurality of light-emitting portions 80A to the plurality of surface electrodes 30. The plurality of light-emitting portions 80A include a second inner light-emitting portion 82A provided with a second inner element electrode 82P and an outer light-emitting portion 83A provided with an outer element electrode 83P. The plurality of surface electrodes 30 include a second inner surface electrode 32P electrically connected to the second inner element electrode 82P and an outer surface electrode 33P electrically connected to the outer element electrode 83P. The plurality of wires 100 includes a plurality of second inner wires 120P electrically connecting the second inner element electrode 82P and the second inner surface electrode 32P, and a plurality of outer wires 130P electrically connecting the outer element electrode 83P and the outer surface electrode 33P. In a plan view, the maximum spacing G3 between adjacent ones of the plurality of outer wires 130P in the X direction is wider than the maximum spacing G2 between adjacent ones of the plurality of second inner wires 120P in the X direction. This configuration achieves the same effect as in (1-1) above.

[0188] (1-3) The outer surface electrode 33P includes end sides 33F, 33G extending in the Y direction (second direction), inclined sides 33D, 33E inclined toward the outer light-emitting portion 83A as they extend from the end sides 33F, 33G toward the center of the substrate surface 21 in the X direction, and an outer inclined portion 33C that includes the inclined sides 33D, 33E and extends further toward the center of the substrate surface 21 than the end sides 33F, 33G. The outer wire 130P is joined to the outer inclined portion 33C.

[0189] With this configuration, the outer inclined portion 33C is formed near the outer light-emitting portion 83A, and therefore the outer wire 130P, of the plurality of outer wires 130P, that is joined to the outer inclined portion 33C is closer to the outer element electrode 83P in the X direction. Therefore, the outer wire 130P, of the plurality of outer wires 130P, that is joined to the outer inclined portion 33C can be shortened, and the resistance component caused by the length of this outer wire 130P can be reduced.

[0190] (1-4) The outer wire 130P is joined to a portion of the outer inclined portion 33C that is close to the outer light-emitting portion 83A. The first inner wire 110P includes a first inner surface electrode 31P that is joined to a portion that is farther from the first inner light-emitting portion 81A than the center in the Y direction.

[0191] According to this configuration, the length of the outer wire 130P can be shortened, thereby reducing the resistance component caused by this length. On the other hand, the length of the first inner wire 110P can be lengthened, thereby increasing the resistance component caused by this length. This reduces the difference between the resistance component of the outer wire 130P and the resistance component of the first inner wire 110P.

[0192] The second inner wire 120P may be joined to a portion of the second inner surface electrode 32P that is farther from the second inner light-emitting portion 82A than the center of the second inner surface electrode 32P in the Y direction. This allows the length of the second inner wire 120P to be increased, thereby increasing the resistance component (inductance) due to this length. This reduces the difference between the resistance component of the outer wire 130P and the resistance component of the second inner wire 120P.

[0193] (1-5) The outer surface electrode 33P includes a first outer end 33A that is an end portion closer to the outer light-emitting portion 83A than the outer inclined portion 33C and has a width in the X direction wider than that of the outer inclined portion 33C. Some of the multiple outer wires 130P are joined to the first outer end 33A. With this configuration, the length of the outer wires 130P joined to the first outer end 33A is shortened, thereby reducing the resistance component caused by that length.

[0194] (1-6) The outer surface electrode 33P is disposed closer to the edge of the substrate surface 21 in the X direction than the first inner surface electrode 31P. The second inner surface electrode 32P includes a second inner narrow portion 32A formed near the second inner light-emitting portion 82A, and a second inner inclined portion 32C adjacent to the outer inclined portion 33C of the outer surface electrode 33P in the X direction and inclined toward the second inner light-emitting portion 82A as it moves toward the center of the substrate surface 21 in the X direction. A portion of the second inner wire 120P is joined to the second inner inclined portion 32C. With this configuration, the length of the second inner wire 120P is increased, thereby reducing the resistance component caused by that length.

[0195] (1-7) When viewed from the Y direction, a portion of the outer wire 130P is positioned so as to partially overlap the second inner wire 120P. With this configuration, the outer wire 130P can be positioned closer to the center of the substrate surface 21 in the X direction. This allows the substrate-side bonding portion 132 of the outer wire 130P to be closer to the outer element electrode 83P in the X direction. Therefore, the length of the outer wire 130P can be shortened, thereby reducing the resistance component caused by that length.

[0196] (1-8) The plurality of light-emitting portions 80A are located at the X-direction ends of the edge light-emitting element 70 and include edge light-emitting portions 84A provided with edge element electrodes 84P. The plurality of surface electrodes 30 include edge surface electrodes 34P provided at the X-direction ends of the substrate surface 21. The plurality of wires 100 include edge wires 140P that electrically connect the edge element electrodes 84P and the edge surface electrodes 34P. The edge surface electrodes 34P have edge wide portions 34B and edge narrow portions 34A. The edge wires 140P are joined to the edge narrow portions 34A.

[0197] With this configuration, the end wire 140P is joined to the narrow portion of the end surface electrode 34P, thereby increasing the resistance component at the joint, thereby reducing the difference between the resistance component of the end wire 140P and the resistance component of the outer wire 130P.

[0198] (1-9) The end surface electrode 34P is disposed closer to the end of the substrate surface 21 in the X direction than the end light emitting element 70 and at a position overlapping with the end element electrode 84P when viewed from the X direction. The outer surface electrode 33P includes a portion disposed closer to the center of the substrate surface 21 in the X direction than the end surface electrode 34P.

[0199] With this configuration, the outer surface electrode 33P can be brought closer in the X direction to the outer element electrode 83P of the edge-emitting element 70. This reduces the resistance component of the conductive path between the outer surface electrode 33P and the outer element electrode 83P.

[0200] (1-10) The plurality of second inner wires 120P include second inner wires of different lengths. With this configuration, it is possible to easily adjust the resistance component caused by the lengths of the plurality of second inner wires 120P.

[0201] (1-11) The plurality of outer wires 130P include outer wires of different lengths. With this configuration, it is possible to easily adjust the resistance component caused by the lengths of the plurality of outer wires 130P.

[0202] (1-12) In a plan view, the wires 100 are symmetrical about a central imaginary line CL extending from the center of the substrate surface 21 in the X direction to the Y direction. This configuration makes it possible to easily set the resistance components of the wires 100 at the design stage.

[0203] (1-13) In plan view, the surface electrodes 30 are symmetrical about a virtual central line CL extending from the center of the substrate surface 21 in the X direction to the Y direction. This configuration makes it possible to easily set the resistance components of the surface electrodes 30 at the design stage.

[0204] Second Embodiment A semiconductor light emitting device 10 according to a second embodiment will be described with reference to Fig. 10. The semiconductor light emitting device 10 according to the second embodiment differs from the semiconductor light emitting device 10 according to the first embodiment in the number of wires. In the following description, differences from the first embodiment will be described in detail, and components common to the first embodiment will be denoted by the same reference numerals and will not be described again.

[0205] In the second embodiment, the numbers of the first inner wires 110P, 110Q, second inner wires 120P, 120Q, outer wires 130P, 130Q, and end wires 140P, 140Q are individually set so as to reduce variations in the resistance components of the first inner wires 110P, 110Q, second inner wires 120P, 120Q, outer wires 130P, 130Q, and end wires 140P, 140Q. In other words, the numbers of the first inner wires 110P, 110Q, second inner wires 120P, 120Q, outer wires 130P, 130Q, and end wires 140P, 140Q are changed to adjust the resistance components of the first inner wires 110P, 110Q, second inner wires 120P, 120Q, outer wires 130P, 130Q, and end wires 140P, 140Q.

[0206] 10 , the number of each of the first inner wires 110P, 110Q, second inner wires 120P, 120Q, and end wires 140P, 140Q is less than the number of each of the outer wires 130P, 130Q. The difference between the number of each of the first inner wires 110P, 110Q, second inner wires 120P, 120Q, and end wires 140P, 140Q and the number of each of the outer wires 130P, 130Q is one. In a second embodiment, the number of each of the first inner wires 110P, 110Q, second inner wires 120P, 120Q, and end wires 140P, 140Q is three, and the number of each of the outer wires 130P, 130Q is four.

[0207] In the second embodiment, the first inner wires 110P, 110Q correspond to the "first wires," and the outer wires 130P, 130Q correspond to the "second wires." That is, in the second embodiment, as shown in FIG. 10, the number of first wires is smaller than the number of second wires. Also, the number of end wires is smaller than the number of second wires. Note that the second inner wires 120P, 120Q may correspond to the "first wires."

[0208] For the first inner wires 110P, the element-side joints 111 are arranged spaced apart from one another. The arrangement direction of the element-side joints 111 is the same as in the first embodiment. However, the spacing between adjacent element-side joints 111 is greater than in the first embodiment.

[0209] The multiple board-side joints 112 are arranged at a distance from each other. The arrangement direction of the multiple board-side joints 112 is the same as in the first embodiment. However, the distance between adjacent board-side joints 112 is larger than in the first embodiment. Therefore, in a plan view, the maximum distance G1 between adjacent first inner wires 110P in the X direction is larger than in the first embodiment. In the second embodiment, the lengths of the multiple first inner wires 110P are equal to each other in a plan view. Note that the lengths of the multiple first inner wires 110P in a plan view can be changed as desired.

[0210] For the second inner wires 120P, the element-side joints 121 are aligned in the X direction and spaced apart in the Y direction. The spacing between adjacent element-side joints 121 is greater than in the first embodiment.

[0211] Two of the multiple board-side joints 122, located at both ends in the X direction, are arranged on the second inner inclined portion 32C of the second inner surface electrode 32P. The positions of the two board-side joints 122 arranged on the second inner inclined portion 32C are the same as in the first embodiment. The board-side joint 122 of the second inner wire 120P arranged between the two second inner wires 120P in the X direction, including the two board-side joints 122 arranged on the second inner inclined portion 32C, is arranged on the second inner wide portion 32B. This board-side joint 122 is arranged at the end of the second inner wide portion 32B closer to the first inner surface electrode 31P in the X direction. In the second embodiment, the lengths of the multiple second inner wires 120P are different from one another in a planar view. Note that the lengths of the multiple second inner wires 120P in a planar view can be arbitrarily changed.

[0212] For the multiple end wires 140P, the multiple element-side bonding portions 141 are arranged biased toward the fourth substrate side surface 26 of the end element electrode 84P. The arrangement direction of the multiple element-side bonding portions 141 is the same as in the first embodiment. The arrangement direction and arrangement positions of the multiple substrate-side bonding portions 142 are the same as in the first embodiment.

[0213] The outer wires 130P are the same as those in the first embodiment. In the second embodiment, the maximum spacing G3 between adjacent outer wires 130P in the X direction is larger than the maximum spacing G1 between adjacent first inner wires 110P in the X direction. The maximum spacing G3 is larger than the maximum spacing G2 between adjacent second inner wires 120P in the X direction. The maximum spacing G3 is larger than the maximum spacing G4 between adjacent end wires 140P in the Y direction.

[0214] Furthermore, in a plan view, the outer wire 130P is formed so as not to overlap with the element-side bonding portion 141 of the end wire 140P. In other words, in a plan view, the element-side bonding portion 141 of the end wire 140P is formed at a position where it does not overlap with the outer wire 130P. In the example shown in FIG. 10 , the average length of the multiple outer wires 130P in a plan view is shorter than the average length of the multiple first inner wires 110P in a plan view. The average length of the multiple outer wires 130P in a plan view is shorter than the average length of the multiple second inner wires 120P in a plan view. The average length of the multiple outer wires 130P in a plan view is longer than the average length of the multiple end wires 140P in a plan view. Therefore, it can be said that the multiple end wires 140P in a plan view are shorter than the average length of the multiple first inner wires 110P in a plan view, and shorter than the average length of the multiple second inner wires 120P in a plan view.

[0215] Note that the multiple first inner wires 110Q, the multiple second inner wires 120Q, the multiple outer wires 130Q, and the multiple end wires 140Q are symmetrical with respect to the first inner wire 110P, the second inner wire 120P, the outer wire 130P, and the end wire 140P, with respect to the central virtual line CL, and therefore their description will be omitted.

[0216] [Effects] The semiconductor light-emitting device 10 of this embodiment provides the following effects. (2-1) The semiconductor light-emitting device 10 includes a substrate 20 having a substrate front surface 21 and a substrate back surface 22, an edge light emitting element 70 disposed on the substrate 20 and having a plurality of light-emitting portions 80A arranged in an X direction (first direction) intersecting the Z direction, which is the thickness direction of the substrate 20, in a plan view, a plurality of surface electrodes 30 formed on the substrate front surface 21 and spaced apart from one another, and a plurality of wires 100 electrically connecting the plurality of light-emitting portions 80A to the plurality of surface electrodes 30. The plurality of light-emitting portions 80A include a first inner light-emitting portion 81A that is a first light-emitting portion provided with a first inner element electrode 81P, and an outer light-emitting portion 83A that is a second light-emitting portion provided with an outer element electrode 83P. The plurality of surface electrodes 30 include a first inner surface electrode 31P electrically connected to the first inner element electrode 81P, and an outer surface electrode 33P electrically connected to the outer element electrode 83P. The plurality of wires 100 includes a plurality of first inner wires 110P electrically connecting the first inner element electrode 81P and the first inner surface electrode 31P, and a plurality of outer wires 130P electrically connecting the outer element electrode 83P and the outer surface electrode 33P. The number of the first inner wires 110P is smaller than the number of the outer wires 130P.

[0217] According to this configuration, the number of the multiple first inner wires 110P is reduced, thereby increasing the resistance component due to the first inner wires 110P. This makes it possible to reduce the difference between the resistance component of the first inner wires 110P and the resistance component of the outer wires 130P. In this way, the difference between the resistance component of the first inner wires 110P and the resistance component of the outer wires 130P can be adjusted depending on the number of first inner wires 110P and the number of outer wires 130P. In other words, the number of first inner wires 110P and the number of outer wires 130P can be individually set so that the difference between the resistance component of the first inner wires 110P and the resistance component of the outer wires 130P is within a predetermined range.

[0218] (2-2) The semiconductor light-emitting device 10 includes a substrate 20 having a substrate front surface 21 and a substrate back surface 22, an edge light-emitting element 70 disposed on the substrate 20 and having a plurality of light-emitting portions 80A arranged in an X direction (first direction) intersecting a Z direction that is the thickness direction of the substrate 20 in a plan view, a plurality of surface electrodes 30 formed on the substrate front surface 21 and spaced apart from one another, and a plurality of wires 100 electrically connecting the plurality of light-emitting portions 80A to the plurality of surface electrodes 30. The plurality of light-emitting portions 80A include a second inner light-emitting portion 82A that is a first light-emitting portion provided with a second inner element electrode 82P, and an outer light-emitting portion 83A that is a second light-emitting portion provided with an outer element electrode 83P. The plurality of surface electrodes 30 include a second inner surface electrode 32P electrically connected to the second inner element electrode 82P, and an outer surface electrode 33P electrically connected to the outer element electrode 83P. The plurality of wires 100 includes a plurality of second inner wires 120P electrically connecting the second inner element electrode 82P and the second inner surface electrode 32P, and a plurality of outer wires 130P electrically connecting the outer element electrode 83P and the outer surface electrode 33P. The number of second inner wires 120P is smaller than the number of outer wires 130P. This configuration provides the same effect as in (2-1) above.

[0219] 11 and 12 , a semiconductor light emitting device 10 according to a third embodiment will be described. The semiconductor light emitting device 10 according to the third embodiment differs from the semiconductor light emitting device 10 according to the first embodiment mainly in the shape of the surface electrode 30 and the number of wires. In the following description, differences from the first embodiment will be described in detail, and components common to the first embodiment will be denoted by the same reference numerals and will not be described again.

[0220] As shown in FIG. 11, the surface electrodes 30 include first inner surface electrodes 310P, 310Q, second inner surface electrodes 320P, 320Q, outer surface electrodes 330P, 330Q, and end surface electrodes 340P, 340Q.

[0221] The first inner surface electrode 310P is an electrode electrically connected to the first inner light-emitting portion 81A of the edge light-emitting element 70, and the first inner surface electrode 310Q is an electrode electrically connected to the first inner light-emitting portion 81B. The second inner surface electrode 320P is an electrode electrically connected to the second inner light-emitting portion 82A of the edge light-emitting element 70, and the second inner surface electrode 320Q is an electrode electrically connected to the second inner light-emitting portion 82B. The outer surface electrode 330P is an electrode electrically connected to the outer light-emitting portion 83A of the edge light-emitting element 70, and the outer surface electrode 330Q is an electrode electrically connected to the outer light-emitting portion 83B. The edge surface electrode 340P is an electrode electrically connected to the edge light-emitting portion 84A of the edge light-emitting element 70, and the edge surface electrode 340Q is an electrode electrically connected to the edge light-emitting portion 84B.

[0222] The first inner surface electrode 310P, the second inner surface electrode 320P, the outer surface electrode 330P, and the end surface electrode 340P are each formed in a region of the substrate surface 21 closer to the first substrate side surface 23 than a central imaginary line CL extending along the Y direction at the center of the substrate 20 in the X direction. The first inner surface electrode 310Q, the second inner surface electrode 320Q, the outer surface electrode 330Q, and the end surface electrode 340Q are each formed in a region of the substrate surface 21 closer to the second substrate side surface 24 than the central imaginary line CL. The first inner surface electrode 310P, the second inner surface electrode 320P, the outer surface electrode 330P, and the end surface electrode 340P are symmetrical with the first inner surface electrode 310Q, the second inner surface electrode 320Q, the outer surface electrode 330Q, and the end surface electrode 340Q about the central imaginary line CL in a plan view.

[0223] The first inner surface electrode 310P, the second inner surface electrode 320P, and the outer surface electrode 330P are arranged spaced apart from one another in the X direction while being aligned with one another in the Y direction. The first inner surface electrode 310P is disposed closer to the virtual center line CL (the center of the substrate 20 in the X direction) than the second inner surface electrode 320P and the outer surface electrode 330P. The outer surface electrode 330P is disposed closer to the first substrate side surface 23 than the first inner surface electrode 310P and the second inner surface electrode 320P.

[0224] In a plan view, the end surface electrode 340P is arranged closer to the first substrate side surface 23 than the end-face light emitting element 70. The end surface electrode 340P is arranged biased toward the fourth substrate side surface 26 relative to the first inner surface electrode 310P, the second inner surface electrode 320P, and the outer surface electrode 330P. When viewed from the X direction, the end surface electrode 340P includes a portion overlapping with the outer surface electrode 330P and a portion extending closer to the fourth substrate side surface 26 than the outer surface electrode 330P.

[0225] The first inner surface electrode 310Q, the second inner surface electrode 320Q, and the outer surface electrode 330Q are arranged spaced apart from one another in the X direction while being aligned with one another in the Y direction. The first inner surface electrode 310Q is arranged closer to the virtual center line CL (the center of the substrate 20 in the X direction) than the second inner surface electrode 320Q and the outer surface electrode 330Q. The outer surface electrode 330Q is arranged closer to the second substrate side surface 24 than the first inner surface electrode 310Q and the second inner surface electrode 320Q. The first inner surface electrodes 310P and 310Q are arranged adjacent to one another across the virtual center line CL.

[0226] In a plan view, the distance between the outer surface electrode 330P and the outer light-emitting portion 83A (outer element electrode 83P) is longer than the distance between the first inner surface electrode 310P and the first inner light-emitting portion 81A (first inner element electrode 81P). The distance between the outer surface electrode 330P and the outer light-emitting portion 83A (outer element electrode 83P) is longer than the distance between the second inner surface electrode 320P and the second inner light-emitting portion 82A (second inner element electrode 82P). Therefore, the outer surface electrode 330P and the outer light-emitting portion 83A can be considered to be a "far light-emitting portion" and a "far-surface electrode" that are far from each other. On the other hand, the first inner surface electrode 310P and the first inner light-emitting portion 81A can be considered to be a "near light-emitting portion" and a "near-surface electrode" that are close to each other. Similarly, the second inner surface electrode 320P and the second inner light-emitting portion 82A can be considered to be a "near light-emitting portion" and a "near-surface electrode." The same applies to the positional relationships between the first inner surface electrode 310Q, the second inner surface electrode 320Q, and the outer surface electrode 330Q and the first inner light-emitting portion 81B, the second inner light-emitting portion 82B, and the outer light-emitting portion 83B.

[0227] In a plan view, the end surface electrode 340Q is disposed closer to the second substrate side surface 24 than the edge light emitting element 70. The end surface electrode 340Q is disposed offset closer to the fourth substrate side surface 26 than the first inner surface electrode 310Q, the second inner surface electrode 320Q, and the outer surface electrode 330Q. When viewed from the X direction, the end surface electrode 340Q includes a portion overlapping with the outer surface electrode 330Q and a portion extending closer to the fourth substrate side surface 26 than the outer surface electrode 330Q.

[0228] In this way, in the arrangement direction (X direction) of the first inner surface electrodes 310P, 310Q, the second inner surface electrodes 320P, 320Q, and the outer surface electrodes 330P, 330Q, the area closer to the central virtual line CL (the center of the substrate 20 in the X direction) is considered to be the "inside," and the areas closer to the first substrate side surface 23 and the second substrate side surface 24 are considered to be the "outside."

[0229] Similar to the first embodiment, the plurality of wires 100 includes first inner wires 110P, 110Q, second inner wires 120P, 120Q, outer wires 130P, 130Q, and end wires 140P, 140Q.

[0230] The first inner wire 110P electrically connects the first inner element electrode 81P and the first inner surface electrode 310P of the edge-emitting element 70, and the first inner wire 110Q electrically connects the first inner element electrode 81Q and the first inner surface electrode 310Q. The second inner wire 120P electrically connects the second inner element electrode 82P and the second inner surface electrode 320P of the edge-emitting element 70, and the second inner wire 120Q electrically connects the second inner element electrode 82Q and the second inner surface electrode 320Q. The outer wire 130P electrically connects the outer element electrode 83P and the outer surface electrode 330P of the edge-emitting element 70, and the outer wire 130Q electrically connects the outer element electrode 83Q and the outer surface electrode 330Q. The end wire 140P electrically connects the end element electrode 84P and the end surface electrode 340P of the end-face light emitting element 70, and the end wire 140Q electrically connects the end element electrode 84Q and the end surface electrode 340Q. Here, the first inner wires 110P and 110Q electrically connecting the first inner surface electrodes 310P and 310Q, which are near-surface electrodes, to the first inner element electrodes 81P and 81Q, which are near-element electrodes, can be considered "near wires." The second inner wires 120P and 120Q electrically connecting the second inner surface electrodes 320P and 320Q, which are near-surface electrodes, to the second inner element electrodes 82P and 82Q, which are near-element electrodes, can be considered "near wires." On the other hand, the outer wires 130P and 130Q electrically connecting the outer surface electrodes 330P and 330Q, which are far-surface electrodes, to the outer element electrodes 83P and 83Q, which are far-element electrodes, can be considered "far wires."

[0231] Next, the detailed shapes and positional relationships of the first inner surface electrodes 310P, 310Q, the second inner surface electrodes 320P, 320Q, the outer surface electrodes 330P, 330Q, and the end surface electrodes 340P, 340Q will be described. Fig. 12 is an enlarged plan view of the first inner surface electrode 310P, the second inner surface electrode 320P, the outer surface electrode 330P, and the end surface electrode 340P and their surroundings. As described above, the first inner surface electrode 310Q, the second inner surface electrode 320Q, the outer surface electrode 330Q, and the end surface electrode 340Q are symmetrical with respect to the first inner surface electrode 310P, the second inner surface electrode 320P, the outer surface electrode 330P, and the end surface electrode 340P about the virtual central line CL, and therefore, description thereof will be omitted.

[0232] 12, the first inner surface electrode 310P is formed in a rectangular shape with its longitudinal direction in the Y direction and its lateral direction in the X direction. The first inner surface electrode 310P is disposed in a position opposite both the first inner element electrode 81P and the second inner element electrode 82P of the edge-emitting element 70 in the Y direction in plan view.

[0233] In plan view, the second inner surface electrode 320P is disposed closer to the first substrate side surface 23 (see FIG. 11 ) than the second inner element electrode 82P of the end-face light emitting element 70. In plan view, the second inner surface electrode 320P is disposed in a position facing both the outer element electrode 83P and the end element electrode 84P of the end-face light emitting element 70 in the Y direction. In plan view, the shortest distance between the second inner surface electrode 320P and the second inner element electrode 82P is greater than the shortest distance between the first inner surface electrode 310P and the first inner element electrode 81P.

[0234] The second inner surface electrode 320P includes a first portion 321 that constitutes a portion closer to the edge light emitting element 70, and a second portion 322 that constitutes a portion farther from the edge light emitting element 70. In one example, the first portion 321 is a portion closer to the edge light emitting element 70 than the center of the second inner surface electrode 320P in the Y direction. The second portion 322 is a portion closer to the third substrate side surface 25 (see FIG. 11 ) than the center of the second inner surface electrode 320P in the Y direction.

[0235] The first portion 321 is formed so that its width (size in the X direction) decreases from the end portion of the second inner surface electrode 320P closest to the edge light emitting element 70 toward the center of the second inner surface electrode 320P. More specifically, the first portion 321 includes an inclined edge 323 that slopes toward the virtual center line CL (the center of the substrate surface 21 in the X direction) from the edge of the second inner surface electrode 320P closest to the edge light emitting element 70 toward the center of the second inner surface electrode 320P in the Y direction. The inclined edge 323 is configured as the edge of the second inner surface electrode 320P in the X direction that is closer to the outer surface electrode 330P. Of the two X direction edges of the second inner surface electrode 320P, the edge closer to the first inner surface electrode 310P extends along the Y direction.

[0236] The second portion 322 is formed so that its width (size in the X direction) increases from the center of the second inner surface electrode 320P in the Y direction toward the end portion closer to the third substrate side surface 25. The second portion 322 includes an end side 324 extending in the Y direction and an inclined side 325 that inclines toward the center virtual line CL (the center of the substrate surface 21 in the X direction) from the end side 324 toward the edge light emitting element 70. In one example, the maximum value of the width dimension of the second portion 322 is greater than the maximum value of the width dimension of the first portion 321. The second inner through wiring 52P is arranged at a position overlapping the second portion 322.

[0237] The outer surface electrode 330P is arranged closer to the first substrate side surface 23 in plan view than the outer element electrode 83P of the edge light emitting element 70. The outer surface electrode 330P is arranged closer to the first substrate side surface 23 than the end element electrode 84P of the edge light emitting element 70 in plan view.

[0238] The outer surface electrode 330P includes an outer narrow portion 331, an outer wide portion 332, and an outer inclined portion 333. The outer narrow portion 331 constitutes a portion of the outer surface electrode 330P that is close to the edge light emitting element 70. The outer narrow portion 331 is located adjacent to the first portion 321 of the second inner surface electrode 320P in the X direction. The outer narrow portion 331 increases in width (size in the X direction) with increasing distance from the edge light emitting element 70 in the Y direction. The outer narrow portion 331 includes an inclined edge 334 that inclines from the edge of the outer surface electrode 330P that is closer to the edge light emitting element 70 toward the third substrate side surface 25, in other words, with increasing distance from the edge light emitting element 70, toward the virtual center line CL (the center of the substrate surface 21 in the X direction). The inclined edge 334 is configured as the edge closer to the second inner surface electrode 320P of both X-direction edges of the outer narrow portion 331. The edge other than the inclined edge 334 of both X-direction edges of the outer narrow portion 331 extends along the Y-direction. The inclined edge 334 is disposed adjacent to the inclined edge 323 of the second inner surface electrode 320P in the X-direction.

[0239] The outer wide portion 332 constitutes the portion of the outer surface electrode 330P that is farther from the edge light emitting element 70. The outer wide portion 332 includes an end portion of the outer surface electrode 330P closer to the third substrate side surface 25 and an end portion of the outer surface electrode 330P closer to the first substrate side surface 23.

[0240] The outer wide portion 332 includes end sides 335 and 336 extending in the Y direction in plan view. The end side 335 is the end side of the outer wide portion 332 that is closer to the second inner surface electrode 320P. The end side 336 is the end side of the outer wide portion 332 that is closer to the first substrate side surface 23. The end side 335 is positioned closer to the first substrate side surface 23 than the edge light emitting element 70. In other words, the outer wide portion 332 is positioned closer to the first substrate side surface 23 than the edge light emitting element 70. The end side 335 is positioned closer to the first substrate side surface 23 than the submount substrate 90. In other words, the outer wide portion 332 is positioned closer to the first substrate side surface 23 than the edge light emitting element 70. The end side 335 is positioned closer to the first substrate side surface 23 than the inclined side 334 of the outer narrow portion 331. The width dimension (size in the X direction) of the outer wide portion 332 is larger than the maximum width dimension of the second portion 322 of the second inner surface electrode 320P.

[0241] The outer inclined portion 333 includes an inclined side 337 close to the second inner surface electrode 320P in plan view and an inclined side 338 close to the first substrate side surface 23. The inclined side 337 is provided in a position adjacent to the inclined side 325 of the second inner surface electrode 320P in the X direction. The inclined side 337 is inclined in a direction approaching the outer light-emitting portion 83A of the edge light emitting element 70 as it moves from the end side 335 of the outer wide portion 332 toward the center of the substrate surface 21 in the X direction. The inclination direction of the inclined side 337 is the same as the inclination direction of the inclined side 325. In plan view, the inclined side 337 and the inclined side 325 are parallel to each other.

[0242] The inclined side 338 is inclined in the X direction from the end side 336 toward the center of the substrate surface 21 and in the X direction toward the outer light-emitting portion 83A. The inclination direction of the inclined side 338 is the same as the inclination direction of the inclined side 337. The inclined side 338 and the inclined side 337 are parallel to each other.

[0243] In this way, the outer inclined portion 333 is formed as an inclined region including an inclined edge 337 that extends toward the center of the substrate surface 21 more than the end edge 335, and an inclined edge 338 that extends toward the center of the substrate surface 21 more than the end edge 336.

[0244] The outer through wiring 53P is disposed at a position overlapping both the outer wide portion 332 and the outer inclined portion 333. In one example, the longitudinal direction of the oval-shaped outer through wiring 53P is parallel to the direction in which the outer inclined portion 333 extends.

[0245] The end surface electrode 340P extends in the Y direction in a plan view. When viewed from the Y direction, the end surface electrode 340P is disposed at a position overlapping the outer inclined portion 333 and the outer wide portion 332 of the outer surface electrode 330P. In one example, the end surface electrode 340P includes an end narrow portion 341 and an end wide portion 342 whose width dimension (size in the X direction) is larger than that of the end narrow portion 341.

[0246] The end narrow portion 341 is positioned so as to overlap the outer narrow portion 331 and outer inclined portion 333 of the outer surface electrode 330P when viewed from the X direction. The end narrow portion 341 includes an end edge 343 and an inclined edge 344. The end edge 343 is positioned so as to be adjacent to the outer narrow portion 331 of the outer surface electrode 330P in the X direction. The end edge 343 extends in the Y direction. The inclined edge 344 is inclined in a direction approaching the first substrate side surface 23 as it extends from the end edge 343 toward the third substrate side surface 25. The inclined edge 344 is positioned so as to be adjacent to the inclined edge 338 in the X direction. The inclination direction of the inclined edge 344 is the same as the inclination direction of the inclined edge 338. In one example, the inclined edge 344 and the inclined edge 338 are parallel to each other.

[0247] The wide end portion 342 is disposed in a position facing the edge light emitting element 70 in the X direction in a plan view. The wide end portion 342 has a constant width and is formed to extend in the Y direction. The end through wiring 54P is disposed in a position overlapping both the narrow end portion 341 and the wide end portion 342.

[0248] In the third embodiment, the number of each of the first inner wires 110P, 110Q, second inner wires 120P, 120Q, and end wires 140P, 140Q is less than the number of each of the outer wires 130P, 130Q. The difference between the number of each of the first inner wires 110P, 110Q, second inner wires 120P, 120Q, and end wires 140P, 140Q and the number of each of the outer wires 130P, 130Q is one. In the third embodiment, the number of each of the first inner wires 110P, 110Q, second inner wires 120P, 120Q, and end wires 140P, 140Q is three, and the number of the outer wires 130P, 130Q is four.

[0249] In the third embodiment, the first inner wires 110P, 110Q correspond to the "first wires," and the outer wires 130P, 130Q correspond to the "second wires." That is, in the second embodiment, as shown in FIG. 11 , the number of first wires is smaller than the number of second wires. Also, the number of end wires is smaller than the number of second wires. Note that the second inner wires 120P, 120Q may correspond to the "first wires."

[0250] Next, a detailed description will be given of the connection configuration between the first inner surface electrodes 310P, 310Q, the second inner surface electrodes 320P, 320Q, the outer surface electrodes 330P, 330Q, and the end surface electrodes 340P, 340Q and the first inner wires 110P, 110Q, the second inner wires 120P, 120Q, the outer wires 130P, 130Q, and the end wires 140P, 140Q. Fig. 12 is an enlarged plan view of the first inner wire 110P, the second inner wire 120P, the outer wire 130P, the end wire 140P, and their surroundings. Note that the first inner wire 110Q, the second inner wire 120Q, the outer wire 130Q, and the end wire 140Q are symmetrical with respect to the first inner wire 110P, the second inner wire 120P, the outer wire 130P, and the end wire 140P, with respect to the central virtual line CL, and therefore their description will be omitted.

[0251] For the first inner wire 110P, the multiple (three in the third embodiment) element-side bonding portions 111 are aligned in the Y direction on the first inner element electrode 81P. The arrangement of the multiple element-side bonding portions 111 in the third embodiment is the same as the arrangement of the multiple element-side bonding portions 111 in the first embodiment. However, unlike the first embodiment, in the third embodiment, the distance between adjacent element-side bonding portions 111 is greater than in the first embodiment.

[0252] The plurality of substrate-side joints 112 (three in the third embodiment) are arranged in a direction intersecting both the X and Y directions in the first inner surface electrode 31P in a plan view. The arrangement direction of the plurality of substrate-side joints 112 is inclined so as to move away from the edge light emitting element 70 toward the center virtual line CL (the center of the substrate surface 21 in the X direction). Two adjacent substrate-side joints 112 among the plurality of substrate-side joints 112 are arranged so as to partially overlap each other when viewed from the Y direction. In a plan view, the spacing between adjacent first inner wires 110P in the X direction among the plurality of first inner wires 110P increases with increasing distance from the first inner element electrode 81P. Here, the spacing between adjacent first inner wires 110P in the X direction can be defined by the distance between adjacent first inner wires 110P in the X direction.

[0253] The lengths of the multiple first inner wires 110P are equal to each other. Here, if the difference in length between the multiple first inner wires 110P is, for example, within 10% of the length of a predetermined first inner wire 110P, then the multiple first inner wires 110P can be said to be equal to each other.

[0254] Of the multiple substrate-side bonding portions 112, two closer to the central virtual line CL (the center of the substrate surface 21 in the X direction) are positioned closer to the third substrate side surface 25 (farther from the edge-light emitting element 70) than the center of the first inner surface electrode 310P in the Y direction. Of the multiple substrate-side bonding portions 112, one closest to the second inner surface electrode 320P is positioned closer to the edge-light emitting element 70 than the center of the first inner surface electrode 310P in the Y direction.

[0255] For the second inner wire 120P, the arrangement of the multiple (three in the third embodiment) element-side joints 121 is similar to the arrangement of the multiple element-side joints 111. The multiple (three in the third embodiment) board-side joints 122 are arranged in a direction intersecting both the X and Y directions in a plan view of the first inner surface electrode 31P. The arrangement direction of the multiple board-side joints 122 is the same as the arrangement direction of the multiple element-side joints 121. One of the multiple board-side joints 122 closest to the center virtual line CL (first inner surface electrode 310P) is arranged in the second portion 322 of the second inner surface electrode 320P. More specifically, one of the multiple board-side joints 122 closest to the center virtual line CL (first inner surface electrode 310P) is arranged at the end of the second portion 322 closest to the first portion 321 in the Y direction. Of the multiple substrate-side joints 122, two closer to the outer surface electrode 330P are disposed on the first portion 321 of the second inner surface electrode 320P. More specifically, of the multiple substrate-side joints 122, two closer to the outer surface electrode 330P are disposed at one of the Y-direction ends of the first portion 321 that is closer to the second portion 322. Of the multiple substrate-side joints 122, two closer to the outer surface electrode 330P are disposed closer to the inclined edge 323 in the X-direction.

[0256] The second inner wires 120P are parallel to one another in a plan view. The inclination angle of the second inner wires 120P relative to the Y direction is greater than the inclination angle of the first inner wires 110P relative to the Y direction.

[0257] In a plan view, the lengths of the multiple second inner wires 120P are equal to each other. Here, if the difference in the lengths of the multiple second inner wires 120P in a plan view is, for example, within 10% of the length of a predetermined second inner wire 120P, it can be said that the lengths of the multiple second inner wires 120P are equal to each other in a plan view. In one example, the total length of the multiple second inner wires 120P in a plan view and the total length of the multiple first inner wires 110P in a plan view are equal to each other.

[0258] For the outer wire 130P, the arrangement of the multiple (four in the third embodiment) element-side joints 131 is similar to the arrangement of the multiple element-side joints 131 in the first embodiment. The multiple (four in the third embodiment) board-side joints 132 are aligned with each other in the X direction and spaced apart from each other in the Y direction. The distance between two adjacent board-side joints 132 in the Y direction is greater than the distance between two adjacent board-side joints 132 in the arrangement direction of the multiple board-side joints 122. The distance between two adjacent board-side joints 132 in the Y direction is greater than the distance between two adjacent board-side joints 132 in the arrangement direction of the multiple board-side joints 132.

[0259] Of the multiple substrate-side bonding portions 132, the substrate-side bonding portion 132 closest to the edge light emitting element 70 is located in the outer narrow width portion 331 of the outer surface electrode 330P. More specifically, of the multiple substrate-side bonding portions 132, the substrate-side bonding portion 132 closest to the edge light emitting element 70 is located at the end of the outer narrow width portion 331 closer to the edge light emitting element 70 and closer to the first substrate side surface 23. Of the multiple substrate-side bonding portions 132, the substrate-side bonding portion 132 second closest to the edge light emitting element 70 is located at the boundary between the outer narrow width portion 331 and the outer inclined portion 333. Of the multiple substrate-side bonding portions 132, the substrate-side bonding portion 132 third closest to the edge light emitting element 70 is located in the outer inclined portion 333. More specifically, of the multiple substrate-side bonding portions 132, the substrate-side bonding portion 132 third closest to the edge light emitting element 70 is located in the portion of the outer inclined portion 333 closer to the outer wide width portion 332. Of the multiple substrate-side bonding portions 132, the substrate-side bonding portion 132 that is farthest from the edge-emitting element 70 is disposed on the outer wide portion 332. More specifically, of the multiple substrate-side bonding portions 132, the substrate-side bonding portion 132 that is farthest from the edge-emitting element 70 is disposed on the end of the outer wide portion 332 that is closer to the second inner surface electrode 320P.

[0260] In a plan view, the multiple outer wires 130P include wires of different lengths. In a plan view, the shortest wire among the multiple outer wires 130P has the same length as the first inner wire 110P. The shortest wire among the multiple outer wires 130P has the same length as the second inner wire 120P. The second shortest wire among the multiple outer wires 130P is longer than both the first inner wire 110P and the second inner wire 120P. Therefore, the third shortest wire and the longest wire among the multiple outer wires 130P are both longer than both the first inner wire 110P and the second inner wire 120P.

[0261] In a plan view, the interval between adjacent outer wires 130P in the X direction among the multiple outer wires 130P increases from the element-side bonding portion 131 toward the substrate-side bonding portion 132. Here, the interval between adjacent outer wires 130P in the X direction can be defined as the shortest distance between the adjacent outer wires 130P in the X direction.

[0262] For the end wire 140P, the multiple (three in the third embodiment) element-side bonding portions 141 are aligned in the Y direction while being aligned with one another in the X direction. The multiple element-side bonding portions 141 are arranged biased toward the fourth substrate side surface 26 of the end element electrode 84P in the Y direction. The multiple element-side bonding portions 141 are arranged biased toward the first substrate side surface 23 of the end element electrode 84P in the X direction. Therefore, in a plan view, the element-side bonding portions 141 can be arranged so as not to overlap with the outer wire 130P.

[0263] The multiple (three in the third embodiment) substrate-side bonding portions 142 are arranged in the end wide portion 342 of the end surface electrode 340P. The multiple substrate-side bonding portions 142 are aligned in the Y direction while being aligned with one another in the X direction. The multiple substrate-side bonding portions 142 are arranged biased toward the first substrate side surface 23 within the end wide portion 342.

[0264] The multiple end wires 140P are arranged spaced apart from each other in the Y direction. The multiple end wires 140P are parallel to each other. The lengths of the multiple end wires 140P are equal to each other. Here, if the difference in the lengths of the multiple end wires 140P is, for example, within 10% of the length of a given end wire 140P, the multiple end wires 140P can be said to be equal to each other. The total length of the multiple end wires 140P is shorter than the total length of the multiple outer wires 130P. The total length of the multiple end wires 140P is shorter than the total length of the multiple first inner wires 110P. The total length of the multiple end wires 140P is shorter than the total length of the multiple second inner wires 120P.

[0265] Note that the lengths of the multiple first inner wires 110P, the multiple second inner wires 120P, the multiple outer wires 130P, and the multiple end wires 140P can each be changed as desired. In one example, the multiple first inner wires 110P may include wires of different lengths. The multiple second inner wires 120P may include wires of different lengths. The multiple end wires 140P may include wires of different lengths. The total length of the multiple first inner wires 110P and the total length of the multiple second inner wires 120P may be different from each other.

[0266] In a plan view, the maximum spacing G3 between adjacent wires 130P in the X direction is wider than the maximum spacing G1 between adjacent wires 110P in the X direction. In a plan view, the maximum spacing G3 is wider than the maximum spacing G2 between adjacent wires 120P in the X direction. In a plan view, the maximum spacing G3 is wider than the maximum spacing G4 between adjacent wires 140P in the Y direction.

[0267] Here, the maximum gap G3 can be defined as the maximum value of the distance in the X direction between two adjacent outer wires 130P among the multiple outer wires 130P. In the example of Fig. 12, in plan view, the maximum gap G3 is the center-to-center distance between the substrate-side joint portions 132 of the two outer wires 130P that are closer to the first substrate side surface 23 among the multiple outer wires 130P.

[0268] The maximum gap G1 can be defined by the maximum value of the distance in the X direction between two adjacent first inner wires 110P among the multiple first inner wires 110P. In the example of Fig. 12, the maximum value of the distance in the X direction between two second inner wires 120P that are closer to the first substrate side surface 23 among the multiple second inner wires 120P in plan view is the maximum gap G1.

[0269] The maximum gap G2 can be defined by the maximum value of the distance in the X direction between two second inner wires 120P that are adjacent to each other in the X direction among the plurality of second inner wires 120P. In the example of Fig. 12, in plan view, the maximum value of the distance in the X direction between two second inner wires 120P that are central in the X direction among the plurality of second inner wires 120P is the maximum gap G2.

[0270] The maximum gap G4 can be defined by the maximum value of the distance in the Y direction between two adjacent end wires 140P among the multiple end wires 140P. In the example of Fig. 12, the distance in the Y direction between two adjacent end wires 140P among the multiple end wires 140P is equal to each other. Therefore, any one of the distances in the Y direction between two adjacent end wires 140P among the multiple end wires 140P can be set as the maximum gap G4.

[0271] In the third embodiment, the maximum distance in the Y direction between two of the outer wires 130P that are adjacent in the X direction among the multiple outer wires 130P is greater than the maximum distance G3. In one example, the maximum distance in the Y direction between two of the multiple outer wires 130P that are adjacent in the X direction among the multiple outer wires 130P can be defined by the center-to-center distance between the substrate-side joint portions 132 of the two outer wires 130P that are adjacent in the X direction.

[0272] [Operation] The operation of the semiconductor light emitting device 10 of the third embodiment will be described. By reducing the number of first inner wires 110P, second inner wires 120P, and end wires 140P, the resistance components (inductance) of the first inner conductive paths, second inner conductive paths, and end conductive paths of the third embodiment tend to increase. In other words, the resistance components of the first inner conductive paths, second inner conductive paths, and end conductive paths of the third embodiment approach the resistance component of the outer conductive paths. This makes it possible to reduce the difference in resistance components of the first inner conductive paths, second inner conductive paths, outer conductive paths, and end conductive paths of the second embodiment.

[0273] As an example, the following describes the simulation results of the resistance components in each conductive path when the semiconductor light emitting device 10 of the third embodiment is driven at 10 MHz and 100 MHz. Also, as a comparative example, the following describes the simulation results of the resistance components in each conductive path when a semiconductor light emitting device in which the number of first inner wires 110P, second inner wires 120P, and end wires 140P is equal to the number of outer wires 130P is driven at 10 MHz and 100 MHz.

[0274] When the comparative semiconductor light-emitting device was driven at 10 MHz, the resistance component of the first inner conductive path was 89%, the resistance component of the second inner conductive path was 91%, and the resistance component of the end conductive path was 83%, assuming that the resistance component of the outer conductive path of the comparative example was 100%. Furthermore, when the comparative semiconductor light-emitting device was driven at 100 MHz, the resistance components of each conductive path were similar to those at 10 MHz. Thus, in the comparative semiconductor light-emitting device, the difference in resistance components among the first inner conductive path, second inner conductive path, outer conductive path, and end conductive path of the comparative example was a maximum of 17%.

[0275] On the other hand, when the semiconductor light-emitting device 10 of the third embodiment was driven at 10 MHz, the resistance component of the first inner conductive path of the third embodiment was 95%, the resistance component of the second inner conductive path of the third embodiment was 99%, and the resistance component of the end conductive path of the third embodiment was 92%, assuming that the resistance component of the outer conductive path of the third embodiment was 100%. When the semiconductor light-emitting device 10 of the third embodiment was driven at 100 MHz, the resistance component of the first inner conductive path of the third embodiment was 94%, the resistance component of the second inner conductive path of the third embodiment was 98%, and the resistance component of the end conductive path of the third embodiment was 91%, assuming that the resistance component of the outer conductive path of the third embodiment was 100%. In this way, the difference in resistance components among the outer conductive path, first inner conductive path, second inner conductive path, and end conductive path of the third embodiment can be kept to a maximum of 10%. The semiconductor light emitting device 10 of the third embodiment can provide the same effects as those of (1-1) and (1-2) of the first embodiment and (2-1) and (2-2) of the second embodiment.

[0276] <Modifications> The above-described embodiments can be modified as follows. The following modifications can be combined with each other as long as no technical contradiction occurs. Furthermore, the technical ideas of the above-described embodiments can be combined with each other as long as no technical contradiction occurs.

[0277] In the first and second embodiments, the positions of the substrate-side bonding portions 132 of the multiple outer wires 130P relative to the outer surface electrode 33P can be changed as desired. In one example, as shown in FIG. 13 , all of the substrate-side bonding portions 132 may be disposed at the first outer end portion 33A of the outer surface electrode 33P. This configuration reduces the length of the multiple outer wires 130P, thereby reducing the resistance component of the conductive path between the outer element electrode 83P of the edge light emitting element 70 and the outer through wiring 53P.

[0278] In the first and second embodiments, the arrangement of the element-side joints 121 of the second inner wires 120P can be changed as desired. In one example, the element-side joints 121 may be arranged biased toward the outer element electrode 83P of the second inner element electrode 82P in the X direction. In another example, the element-side joints 121 may be arranged in the same direction as the arrangement of the element-side joints 111 of the first inner wires 110P in a plan view.

[0279] In the first and second embodiments, the arrangement of the element-side bonding portions 141 of the multiple end wires 140P can be changed as desired. In one example, the multiple element-side bonding portions 141 may be aligned in the Y direction while being aligned with one another in the X direction. In this case, the positions of the multiple element-side bonding portions 141 relative to the end element electrodes 84P in the X direction can be changed as desired.

[0280] In the first and second embodiments, the shape of the end surface electrodes 34P, 34Q in plan view can be changed as desired. For example, the end narrow portions 34A may be omitted from the end surface electrodes 34P, 34Q. In this case, the portions corresponding to the end narrow portions 34A may have the same width (size in the X direction) as the end wide portions 34B, for example.

[0281] In the second embodiment, the number of either the first inner wires 110P or the second inner wires 120P may be the same as the number of the outer wires 130P. In the second embodiment, the number of the end wires 140P may be the same as the number of the outer wires 130P.

[0282] In the third embodiment, the maximum spacing G3 between adjacent outer wires 130P in the X direction may be equal to or less than the maximum spacing G1 between adjacent first inner wires 110P in the X direction. As an example, as shown in FIG. 14 , the substrate-side joint portions 132 of three of the outer wires 130P that are closer to the third substrate side surface 25 in the Y direction are positioned closer to the inclined edge 334 than in the third embodiment. This results in the lengths of the three outer wires 130P being shorter in a planar view than in the third embodiment. In the example shown in FIG. 14 , the lengths of the three outer wires 130P are equal to one another in a planar view. In a planar view, the three outer wires 130P are shorter than the shortest first inner wire 110P among the multiple first inner wires 110P. Furthermore, in a planar view, the three outer wires 130P are shorter than the shortest second inner wire 120P among the multiple second inner wires 120P.

[0283] 14, the maximum spacing G3 is defined by the maximum value of the distance in the X direction between the outer wire 130P closest to the third substrate side surface 25 and the outer wire 130P second closest to the third substrate side surface 25. This maximum spacing G3 is larger than the maximum spacing G1 between the plurality of first inner wires 110P and the maximum spacing G2 between the plurality of second inner wires 120P.

[0284] In the third embodiment, as shown in Fig. 15 , the end surface electrode 340P may include an end narrow portion 345 and an end wide portion 346 instead of the end narrow portion 341 and the end wide portion 342 shown in Fig. 12 . The shape of the end wide portion 346 in plan view is the same as the shape of the end narrow portion 341 shown in Fig. 12 . Therefore, the end wide portion 346 includes an end side 343 and an inclined side 344. The end narrow portion 345 has a smaller width dimension (size in the X direction) than the end wide portion 346. Each of the substrate-side joint portions 142 of the multiple end wires 140P may be disposed in the end narrow portion 345.

[0285] In the third embodiment, as shown in FIG. 16 , the number of first inner wires 110P, second inner wires 120P, and end wires 140P may be the same as the number of outer wires 130P. Note that in this modified example, the number of one or two of the first inner wires 110P, second inner wires 120P, and end wires 140P may be less than the number of outer wires 130P. In one example, the number of first inner wires 110P, second inner wires 120P, and outer wires 130P may be the same, while the number of end wires 140P may be less than the number of outer wires 130P. Note that the relationship in number between the first inner wires 110Q, second inner wires 120Q, outer wires 130Q, and end wires 140Q may also be similar.

[0286] 16 , the average length of the multiple outer wires 130P in a plan view is longer than the average length of the multiple first inner wires 110P in a plan view. The average length of the multiple outer wires 130P in a plan view is longer than the average length of the multiple second inner wires 120P in a plan view. The average length of the multiple outer wires 130P in a plan view is longer than the average length of the multiple end wires 140P in a plan view. Furthermore, the average length of the multiple end wires 140P in a plan view is shorter than the average length of the multiple first inner wires 110P in a plan view and shorter than the average length of the multiple second inner wires 120P in a plan view. The same relationship in average length can be established among the first inner wire 110Q, the second inner wire 120Q, the outer wire 130Q, and the end wire 140Q.

[0287] 17 , in the second embodiment, when the number of first inner wires 110P is smaller than the number of outer wires 130P, the maximum distance G3 between adjacent first inner wires 130P in the X direction in plan view may be equal to or less than the maximum distance G1 between adjacent first inner wires 110P in the X direction. In this case, the substrate-side joint portion 132 of the outer wire 130P closest to the first substrate side surface 23 among the multiple outer wires 130P is disposed at the first outer end portion 33A of the outer surface electrode 33P. Therefore, the outer wire 130P closest to the first substrate side surface 23 among the multiple outer wires 130P is shorter than in the second embodiment.

[0288] 17 , the maximum interval G3 can be defined in a plan view as the maximum value of the distance in the X direction between the outer wire 130P closest to the center of the substrate surface 21 and the outer wire 130P second closest to the center of the substrate surface 21 among the multiple outer wires 130P in the X direction. Also, the maximum interval G1 can be defined in a plan view as the maximum value of the distance in the X direction between the first inner wire 110P closest to the first substrate side surface 23 and the first inner wire 110P second closest to the first substrate side surface 23 among the multiple first inner wires 110P in the X direction.

[0289] 17, the maximum spacing G2 can be defined as the maximum value of the distance in the X direction between the second inner wire 120P closest to the center of the substrate surface 21 and the second inner wire 120P closest to the center of the substrate surface 21, among the second inner wires 120P in the X direction.

[0290] 17, the maximum spacing G3 between adjacent outer wires 130P in the X direction may be less than the maximum spacing G4 between adjacent end wires 140P in the Y direction. The maximum spacing G4 can be defined as the maximum distance in the Y direction between the end wire 140P closest to the third substrate side surface 25 and the end wire 140P second closest to the third substrate side surface 25 among the end wires 140P in the Y direction. The same applies to the relationship between the numbers and maximum spacings of the first inner wires 110Q, second inner wires 120Q, outer wires 130Q, and end wires 140Q.

[0291] 18 , in the third embodiment, when the number of outer wires 130P is smaller than the number of first inner wires 110P, the maximum interval G3 between adjacent outer wires 130P in the X direction in plan view may be equal to or smaller than the maximum interval G1 between adjacent first inner wires 110P in the X direction. In this case, the substrate-side joint portion 132 of the outer wire 130P closest to the first substrate side surface 23 among the multiple outer wires 130P is disposed at the first outer end portion 33A of the outer surface electrode 33P. In this case, the maximum interval G3 can be defined as the maximum value of the distance in the X direction between the outer wire 130P closest to the center of the substrate surface 21 and the outer wire 130P second closest to the center of the substrate surface 21 among the multiple outer wires 130P in the X direction.

[0292] 18 , the maximum distance G2 can be defined as the maximum distance in the X direction between the second inner wire 120P closest to the first substrate side surface 23 and the second inner wire 120P next to the first substrate side surface 23, among the second inner wires 120P in the X direction.

[0293] 18 , the maximum spacing G3 between adjacent outer wires 130P in the X direction may be less than the maximum spacing G4 between adjacent end wires 140P in the X direction in a plan view. The maximum spacing G4 can be defined as the maximum distance in the Y direction between the end wire 140P closest to the third substrate side surface 25 and the end wire 140P second closest to the third substrate side surface 25 among the multiple end wires 140P in a plan view. The same applies to the relationship between the numbers and maximum spacings of the first inner wires 110Q, second inner wires 120Q, outer wires 130Q, and end wires 140Q.

[0294] In each embodiment, the shapes of the first inner through wirings 51P, 51Q, the second inner through wirings 52P, 52Q, the outer through wirings 53P, 53Q, and the end through wirings 54P, 54Q in plan view can be changed as desired. For example, the shapes of the first inner through wirings 51P, 51Q, the second inner through wirings 52P, 52Q, the outer through wirings 53P, 53Q, and the end through wirings 54P, 54Q in plan view may be any of a circle, a polygon, and an ellipse.

[0295] In each embodiment, the adhesive pattern 36 may be omitted. In each embodiment, the submount substrate 90 may be omitted. In each embodiment, the first inner wire 110P, the second inner wire 120P, the outer wire 130P, and the end wire 140P have the same wire height, but this is not limited to this. The wire height of at least one of the first inner wire 110P, the second inner wire 120P, the outer wire 130P, and the end wire 140P may be different from the other wire heights. Note that the wire heights of the first inner wire 110Q, the second inner wire 120Q, the outer wire 130Q, and the end wire 140Q can also be changed in a similar manner.

[0296] In each embodiment, the plurality of first inner wires 110P may include first inner wires 110P having different wire heights. The same can be applied to the plurality of first inner wires 110Q.

[0297] In each embodiment, the plurality of second inner wires 120P may include second inner wires 120P having different wire heights. The same can be applied to the plurality of second inner wires 120Q.

[0298] In each embodiment, the plurality of outer wires 130P may include outer wires 130P having different wire heights. The plurality of outer wires 130Q may also be modified in a similar manner.

[0299] In each embodiment, the plurality of end wires 140P may include end wires 140P having different wire heights. The plurality of end wires 140Q may also be modified in a similar manner.

[0300] As shown in FIG. 19 , the number of first inner wires 110PX, 110QX, second inner wires 120PX, 120QX, and end wires 140PX, 140QX may be fewer than the number of outer wires 130PX, 130QX. In the semiconductor light-emitting device 10 shown in FIG. 19 , the distance between the outer surface electrode 33PX and the outer light-emitting portion 83A of the edge-emitting element 70 is longer than the distance between the first inner surface electrode 31PX and the first inner light-emitting portion 81A of the edge-emitting element 70. Furthermore, the distance between the outer surface electrode 33PX and the outer light-emitting portion 83A is longer than the distance between the second inner surface electrode 32PX and the second inner light-emitting portion 82A of the edge-emitting element 70. This configuration achieves the same effects as those of (2-1) and (2-2) of the second embodiment.

[0301] In each embodiment, the number of element electrodes 80 of the edge light emitting element 70 can be changed as desired. In one example, the number of element electrodes 80 may be six. In this case, any one of the first inner surface electrodes 31P, 31Q, the second inner surface electrodes 32P, 32Q, and the end surface electrodes 34P, 34Q in the surface electrode 30 is omitted. In another example, the number of element electrodes 80 may be four. In this case, any two of the first inner surface electrodes 31P, 31Q, the second inner surface electrodes 32P, 32Q, and the end surface electrodes 34P, 34Q in the surface electrode 30 are omitted.

[0302] One or more of the various examples described herein can be combined to the extent that they are not technically inconsistent. In this specification, "at least one of A and B" should be understood to mean "only A, or only B, or both A and B."

[0303] The term "on" as used in this disclosure includes the meanings of "on" and "above," unless the context clearly indicates otherwise. Thus, for example, the expression "a first element is mounted on a second element" is intended to mean that in some embodiments, the first element may be placed directly on the second element in contact with the second element, while in other embodiments, the first element may be placed above the second element without contacting the second element. In other words, the term "on" does not exclude a structure in which another element is formed between the first element and the second element.

[0304] The Z-axis direction used in this disclosure does not necessarily have to be the vertical direction, nor does it have to completely coincide with the vertical direction. Therefore, various structures according to this disclosure are not limited to the "up" and "down" in the Z direction described herein being "up" and "down" in the vertical direction. For example, the X direction may be the vertical direction, or the Y direction may be the vertical direction.

[0305] <Supplementary Notes> The technical ideas that can be understood from the above-described embodiments and modified examples are described below. Note that the reference numerals of the components of the embodiments corresponding to the components described in each supplementary note are shown in parentheses. The reference numerals are shown as examples to aid understanding, and the components described in each supplementary note should not be limited to the components indicated by the reference numerals.

[0306] [Appendix A1] A light emitting device (70) comprising: a substrate (20) having a substrate front surface (21) and a substrate back surface (22); an edge light emitting device (70) disposed on the substrate (20) and having a plurality of light emitting portions (80A, 80B) arranged in a first direction (X direction) intersecting a thickness direction (Z direction) of the substrate (20) in a plan view; a plurality of surface electrodes (30) formed on the substrate front surface (21) and arranged spaced apart from each other; and a plurality of wires (100) electrically connecting the plurality of light emitting portions (80A, 80B) and the plurality of surface electrodes (30), wherein the plurality of light emitting portions (80A) include first light emitting portions (81A, 82A) provided with first element electrodes (81P / 82P), and a second light emitting portion (83A) provided with a second element electrode (83P), and the plurality of surface electrodes (30) a first surface electrode (31P / 32P) electrically connected to the first element electrode (81P / 82P); and a second surface electrode (33P) electrically connected to the second element electrode (83P); the plurality of wires (100) include: a plurality of first wires (110P / 120P) electrically connecting the first element electrode (81P / 82P) and the first surface electrode (31P / 32P); and a plurality of second wires (130P) electrically connecting the second element electrode (83P) and the second surface electrode (33P); and in a planar view, a maximum interval (G3) between adjacent ones of the plurality of second wires (130P) in the first direction (X direction) is wider than a maximum interval (G1 / G2) between adjacent ones of the plurality of first wires (110P / 120P) in the first direction (X direction).

[0307] [Appendix A2] The semiconductor light emitting device according to Appendix A1, wherein the number of the first wires (110P / 120P) is smaller than the number of the second wires (130P).

[0308] [Appendix A3] The semiconductor light-emitting device described in Appendix A1 or A2, wherein the second surface electrode (33P) is arranged closer to an end of the substrate surface (21) than the first surface electrode (31P / 32P) in the first direction (X direction), and the distance between the second surface electrode (33P) and the second light-emitting portion (83A) is longer than the distance between the first surface electrode (31P / 32P) and the first light-emitting portion (81A / 82A).

[0309] [Appendix A4] The semiconductor light-emitting device according to any one of Appendices A1 to A3, wherein the second surface electrode (33P) includes: end sides (33F, 33G) extending in a second direction (Y direction) perpendicular to the first direction (X direction) in a planar view; inclined sides (33D, 33E) inclined in a direction approaching the second light-emitting section (83A) as it moves from the end sides (33F, 33G) toward the center of the substrate surface (21) in the first direction (X direction); and a second inclined portion (33C) that includes the inclined sides (33D, 33E) and extends further toward the center of the substrate surface (21) than the end sides (33F, 33G), and the second wire (130P) is joined to the second inclined portion (33C).

[0310] [Appendix A5] The semiconductor light-emitting device described in Appendix A4, wherein the first wire (110P / 120P) is joined to a portion of the first surface electrode (31P / 32P) farther from the first light-emitting portion (81A / 82A) than the center in the second direction (Y direction), and the second wire (130P) is joined to a portion of the second surface electrode (33P) closer to the second light-emitting portion (83A) than the center in the second direction (Y direction).

[0311] [Appendix A6] The semiconductor light emitting device according to Appendix A5, wherein the second wire (130P) is joined to a portion of the second inclined portion (33C) that is close to the second light emitting portion (83A).

[0312] [Appendix A7] The semiconductor light-emitting device described in Appendix A5 or A6, wherein the second surface electrode (33P) includes a second wide portion (33A) at an end closer to the second light-emitting portion (83A) than the second inclined portion (33C), the second wide portion having a width in the first direction (X direction) wider than that of the second inclined portion (33C), and a portion of the second wire (130P) is joined to the second wide portion (33A).

[0313] [Appendix A8] The semiconductor light-emitting device according to any one of Appendices A5 to A7, wherein the second surface electrode (33P) is disposed closer to an end of the substrate surface (21) than the first surface electrode (31P / 32P) in the first direction (X direction), and the first surface electrode (32P) includes: a first narrow portion (32A) formed near the first light-emitting portion (82A), and a first inclined portion (32C) adjacent to the second inclined portion (33C) in the first direction (X direction) and inclined in a direction approaching the first light-emitting portion (82A) as it moves toward the center of the substrate surface (21) in the first direction (X direction), and at least a portion of the first wire (120P) is joined to the first inclined portion (32C).

[0314] [Appendix A9] The semiconductor light-emitting device described in any one of Appendices A5 to A8, wherein a portion of the second wire (130P) is positioned so as to partially overlap the first wire (120P) when viewed from the second direction (Y direction).

[0315] [Appendix A10] The semiconductor light emitting device according to any one of Appendices A1 to A9, wherein the number of the first wires (110P / 120P) and the number of the second wires (130P) are the same.

[0316] [Appendix A11] The semiconductor light-emitting device described in any one of Appendices A1 to A10, wherein the plurality of light-emitting portions (80A) include edge light-emitting portions (84A) located at ends of the edge light-emitting element (70) in the first direction (X direction) and provided with edge element electrodes (84P), the plurality of surface electrodes (30) include edge surface electrodes (34P) provided at ends of the substrate surface (21) in the first direction (X direction), and the plurality of wires (100) include edge wires (140P) that electrically connect the edge element electrodes (84P) and the edge surface electrodes (34P).

[0317] [Appendix A12] The semiconductor light-emitting device according to Appendix A11, wherein the end surface electrode (34P) has an end wide portion (34B) and an end narrow portion (34A), and the end wire (140P) is joined to the end narrow portion (34A).

[0318] [Appendix A13] The semiconductor light-emitting device described in Appendix A12, wherein a plurality of the end wires (140P) are provided, the end narrow portions (34A) extend in a second direction (Y direction) perpendicular to the first direction (X direction) in a planar view, and the joints (142) between the plurality of end wires (140P) and the end narrow portions (34A) are aligned with each other in the first direction (X direction) and spaced apart in the second direction (Y direction).

[0319] [Appendix A14] The semiconductor light-emitting device according to any one of Appendices A11 to A13, wherein the number of the end wires (140P) and the number of the second wires (130P) are the same, and the total length of the end wires (140P) is shorter than the total length of the second wires (130P).

[0320] [Appendix A15] The semiconductor light-emitting device described in any one of Appendices A11 to A14, wherein the end surface electrode (34P) is arranged closer to the end of the substrate surface (21) than the end-face light-emitting element (70) in the first direction (X direction) and at a position opposite the end element electrode (84P) in the first direction (X direction) in a planar view, and the second surface electrode (33P) includes a portion that is arranged closer to the center of the substrate surface (21) than the end surface electrode (34P) in the first direction (X direction).

[0321] [Appendix A16] The semiconductor light emitting device according to any one of Appendices A1 to A15, wherein the plurality of first wires (120P) include first wires having different lengths.

[0322] [Appendix A17] The semiconductor light emitting device according to any one of Appendices A1 to A16, wherein the plurality of second wires (130P) include second wires having different lengths.

[0323] [Appendix A18] In a planar view, a direction perpendicular to the first direction (X direction) is defined as a second direction (Y direction), and in a planar view, the plurality of wires (100) are symmetrical about a virtual line (CL) extending from the center of the substrate surface (21) in the first direction (X direction) to the second direction (Y direction). The semiconductor light-emitting device according to any one of Appendices A1 to A17.

[0324] [Appendix A19] In a planar view, a direction orthogonal to the first direction (X direction) is defined as a second direction (Y direction), and in a planar view, the plurality of surface electrodes (30) are symmetrical about a virtual line (CL) extending from a center of the substrate surface (21) in the first direction (X direction) to the second direction (Y direction). The semiconductor light-emitting device according to any one of Appendices A1 to A18.

[0325] [Appendix A20] The semiconductor light-emitting device according to any one of Appendices A1 to A19, comprising: a case (200) connected to the substrate surface (21), covering the edge-emitting element (70), the plurality of surface electrodes (30), and the plurality of wires (100), and being transparent in at least the emission direction of the edge-emitting element (70) in the second direction (Y direction), with a direction perpendicular to the first direction (X direction) in a planar view being a second direction (Y direction).

[0326] [Appendix A21] The semiconductor light-emitting device according to any one of Appendices A1 to A20, comprising a plurality of through wirings (50) that penetrate the substrate (20) in its thickness direction (Z direction) and are connected to each of the surface electrodes (30), and the distance between the through wiring (53P) connected to the second surface electrode (33P) and the second light-emitting portion (83P) is longer than the distance between the through wiring (51P / 52P) connected to the first surface electrode (31P / 32P) and the first light-emitting portion (81A / 82A).

[0327] [Appendix A22] The semiconductor light-emitting device according to Appendix A21, wherein each of the through wires (50) has an oval shape in plan view.

[0328] [Appendix A23] The semiconductor light-emitting device according to Appendix A22, wherein, in plan view, a direction perpendicular to the first direction (X direction) is defined as a second direction (Y direction), and, in plan view, each of the through wirings (50) is inclined with respect to both the first direction (X direction) and the second direction (Y direction).

[0329] [Appendix A24] The semiconductor light emitting device according to any one of Appendices A1 to A23, wherein the wire height of each of the first wires (110P / 120P) and the wire height of each of the second wires (130P) are different from each other.

[0330] [Appendix A25] The semiconductor light emitting device according to any one of Appendices A1 to A23, wherein the wire height of each of the first wires (110P / 120P) and the wire height of each of the second wires (130P) are the same.

[0331] [Appendix A26] The semiconductor light emitting device according to any one of Appendices A1 to A23, wherein the plurality of first wires (110P / 120P) include first wires having different wire heights.

[0332] [Appendix A27] The semiconductor light emitting device according to any one of Appendices A1 to A23, wherein the plurality of second wires (130P) include second wires having different wire heights.

[0333] [Appendix A28] The semiconductor light emitting device according to any one of Appendices A11 to A15, wherein the number of the end wires (140P) is smaller than the number of the second wires (130P).

[0334] [Appendix A29] The semiconductor light emitting device according to any one of Appendices A11 to A15, wherein the number of the end wires (140P) is equal to the number of the second wires (130P).

[0335] [Appendix A30] The semiconductor light emitting device according to any one of Appendices A11 to A15, wherein the number of the end wires (140P) is equal to the number of the first wires (110P / 120P).

[0336] [Appendix A31] The semiconductor light emitting device according to any one of Appendices A11 to A15, wherein the end wire (140P) extends along the first direction (X direction) in plan view.

[0337] [Appendix A32] The semiconductor light-emitting device according to Appendix A19, wherein an adhesive pattern (36) is formed on the substrate surface (21) in a plan view, surrounding the edge light-emitting element (70), the plurality of surface electrodes (30), and the plurality of wires (100), and the case (200) is adhered to the adhesive pattern (36) with an adhesive.

[0338] [Appendix A33] The semiconductor light emitting device according to Appendix A32, wherein the case (200) is made of a glass material.

[0339] [Appendix A34] A light emitting device (70) comprising: a substrate (20) having a substrate front surface (21) and a substrate back surface (22); an edge light emitting device (70) disposed on the substrate (20) and having a plurality of light emitting portions (80A) arranged in a first direction (X direction) intersecting a thickness direction (Z direction) of the substrate (20) in a plan view; a plurality of surface electrodes (30) formed on the substrate front surface (21) and disposed spaced apart from one another; and a plurality of wires (100) electrically connecting the plurality of light emitting portions (80A) to the plurality of surface electrodes (30), wherein the plurality of light emitting portions (80A) include near light emitting portions (81A / 82A) and a far light emitting portion (83A), and the plurality of surface electrodes (30) include near surface electrodes (310P / 320P) electrically connected to the near light emitting portions (81A / 82A), and a far surface electrode (330P) electrically connected to the far light emitting portion (83A), a semiconductor light emitting device (10) in which, in a planar view, the distance between the near light emitting portion (81A / 82A) and the near-surface electrode (310P / 320P) is shorter than the distance between the far light emitting portion (83A) and the far-surface electrode (330P); the plurality of wires (100) include a plurality of near wires (110P / 120P) connecting the near light emitting portion (81A / 82A) and the near-surface electrode (310P / 320P), and a plurality of far wires (130P) connecting the far light emitting portion (83A) and the far-surface electrode (330P); and in a planar view, the maximum spacing (G3) between adjacent ones of the plurality of far wires (130P) in the first direction (X direction) is wider than the maximum spacing (G1 / G2) between adjacent ones of the plurality of near wires (110P / 120P) in the first direction (X direction).

[0340] [Appendix B1] A light emitting device (70) comprising: a substrate (20) having a substrate front surface (21) and a substrate back surface (22); an edge light emitting device (70) disposed on the substrate (20) and having a plurality of light emitting portions (80A, 80B) arranged in a first direction (X direction) intersecting a thickness direction (Z direction) of the substrate (20) in a plan view; a plurality of surface electrodes (30) formed on the substrate front surface (21) and arranged spaced apart from each other; and a plurality of wires (100) electrically connecting the plurality of light emitting portions (80A, 80B) and the plurality of surface electrodes (30), wherein the plurality of light emitting portions (80A) include a first light emitting portion (81A / 82A) provided with a first element electrode (81P / 82P), and a second light emitting portion (83A) provided with a second element electrode (83P), and the plurality of surface electrodes (30) a first surface electrode (31P / 32P) electrically connected to the first element electrode (81P / 82P); and a second surface electrode (33P) electrically connected to the second element electrode (83P), wherein the plurality of wires (100) include: first wires (110P / 120P) electrically connecting the first element electrode (81P / 82P) and the first surface electrode (31P / 32P); and second wires (130P) electrically connecting the second element electrode (83P) and the second surface electrode (33P), and the number of the first wires (110P / 120P) is less than the number of the second wires (130P).

[0341] [Appendix B2] The semiconductor light-emitting device described in Appendix B1, wherein the edge light-emitting element (70) is arranged at the center of the substrate surface (21) in the first direction (X direction), the first element electrode (81P / 82P) is arranged toward the center of the edge light-emitting element (70) in the first direction (X direction), the second element electrode (83P) is arranged toward the end of the edge light-emitting element (70) in the first direction (X direction), the first surface electrode (31P / 32P) is arranged toward the center of the substrate surface (21) in the first direction (X direction), and the second surface electrode (33P) is arranged toward the end of the substrate surface (21) in the first direction (X direction).

[0342] [Appendix B3] The semiconductor light-emitting device according to Appendix B2, wherein the distance between the second surface electrode (33P) and the second light-emitting portion (83A) is longer than the distance between the first surface electrode (31P / 32P) and the first light-emitting portion (81A / 82A).

[0343] [Appendix B4] The semiconductor light-emitting device according to Appendix B2 or B3, wherein the second surface electrode (33P) includes end sides (33F, 33G) extending in a second direction (Y direction) perpendicular to the first direction (X direction) in a planar view, inclined sides (33D, 33E) inclined in a direction approaching the second light-emitting section (83A) as it moves from the end sides (33F, 33G) to the center of the substrate surface (21) in the first direction (X direction), and a second inclined portion (33C) that includes the inclined sides (33D, 33E) and extends further toward the center of the substrate surface (21) than the end sides (33F, 33G), and the second wire (130P) is joined to the second inclined portion (33C).

[0344] [Appendix B5] The semiconductor light-emitting device described in Appendix B4, wherein the first wire (110P / 120P) is joined to a portion of the first surface electrode (31P / 32P) farther from the first light-emitting portion (81A / 82A) than the center in the second direction (Y direction), and the second wire (130P) is joined to a portion of the second surface electrode (33P) closer to the second light-emitting portion (83A) than the center in the second direction (Y direction).

[0345] [Appendix B6] The semiconductor light-emitting device described in Appendix B5, wherein the second surface electrode (33P) includes a second wide portion (33A) at an end closer to the second light-emitting portion (83A) than the second inclined portion (33C), the second wide portion having a width in the first direction (X direction) wider than that of the second inclined portion (33C), and a portion of the second wire (130P) is joined to the second wide portion (33A).

[0346] [Appendix B7] The semiconductor light-emitting device described in Appendix B5, wherein the first surface electrode (32P) includes: a first narrow portion (32A) formed near the first light-emitting portion (82A); and a first inclined portion (32C) adjacent to the second inclined portion (33C) in the first direction (X direction) and inclined toward the first light-emitting portion (82A) as it moves toward the center of the substrate surface (21) in the first direction (X direction), and at least a portion of the first wire (120P) is joined to the first inclined portion (32C).

[0347] [Appendix B8] The semiconductor light emitting device according to Appendix B5, wherein a portion of the second wire (130P) is arranged in a position that partially overlaps with the first wire (120P) when viewed from the second direction (Y direction).

[0348] [Appendix B9] The semiconductor light-emitting device described in any one of Appendices B1 to B8, wherein the plurality of light-emitting portions (80A) include edge light-emitting portions (84A) located at ends of the edge light-emitting element (70) in the first direction (X direction) and provided with edge element electrodes (84P), the plurality of surface electrodes (30) include edge surface electrodes (34P) provided at ends of the substrate surface (21) in the first direction (X direction), and the plurality of wires (100) include edge wires (140P) electrically connecting the edge element electrodes (84P) and the edge surface electrodes (34P).

[0349] [Appendix B10] The semiconductor light emitting device according to Appendix B9, wherein the number of the end wires (140P) is smaller than the number of the second wires (130P).

[0350] [Appendix B11] The semiconductor light-emitting device according to Appendix B9 or B10, wherein the end surface electrode (34P) has an end wide portion (34B) and an end narrow portion (34A), and the end wire (140P) is joined to the end narrow portion (34A).

[0351] [Appendix B12] A semiconductor light-emitting device as described in Appendix B11, wherein a plurality of the end wires (140P) are provided, the end narrow portions (34A) extend in a second direction (Y direction) perpendicular to the first direction (X direction) in a planar view, and the joints (142) between the plurality of end wires (140P) and the end narrow portions (34A) are aligned with each other in the first direction (X direction) and spaced apart in the second direction (Y direction).

[0352] [Appendix B13] The semiconductor light emitting device according to any one of Appendices B9 to B12, wherein an average length of the plurality of end wires (140P) is shorter than an average length of the plurality of second wires (130P).

[0353] [Appendix B14] The semiconductor light-emitting device described in any one of Appendices B9 to B13, wherein the end surface electrode (34P) is arranged closer to the end of the substrate surface (21) than the end-face light-emitting element (70) in the first direction (X direction) and at a position opposite the end element electrode (84P) in the first direction (X direction) in a planar view, and the second surface electrode (33P) includes a portion that is arranged closer to the center of the substrate surface (21) than the end surface electrode (84P) in the first direction (X direction).

[0354] [Appendix B15] The semiconductor light emitting device according to any one of Appendices B1 to B14, wherein the plurality of first wires (110P / 120P) include first wires of different lengths.

[0355] [Appendix B16] The semiconductor light emitting device according to any one of Appendices B1 to B15, wherein the plurality of second wires (130P) include second wires of different lengths.

[0356] [Appendix B17] In a planar view, a direction perpendicular to the first direction (X direction) is defined as a second direction (Y direction), and in a planar view, the plurality of wires (100) are symmetrical about a virtual line (CL) extending from the center of the substrate surface (21) in the first direction (X direction) to the second direction (Y direction). The semiconductor light-emitting device according to any one of Appendices B1 to B16.

[0357] [Appendix B18] In a planar view, a direction perpendicular to the first direction (X direction) is defined as a second direction (Y direction), and in a planar view, the plurality of surface electrodes (30) are symmetrical about a virtual line (CL) extending from the center of the substrate surface (21) in the first direction (X direction) to the second direction (Y direction). The semiconductor light-emitting device according to any one of Appendices B1 to B17.

[0358] [Appendix B19] The semiconductor light-emitting device according to any one of Appendices B1 to B18, further comprising: a case (200) connected to the substrate surface (21), covering the edge light-emitting element (70), the plurality of surface electrodes (30), and the plurality of wires (100), the case (200) being transparent in at least the emission direction of the edge light-emitting element (70) in the second direction (Y direction), with a direction perpendicular to the first direction (X direction) in a planar view being a second direction (Y direction).

[0359] [Appendix B20] The semiconductor light-emitting device according to any one of Appendices B1 to B19, comprising a plurality of through wirings (50) that penetrate the substrate (20) in its thickness direction (Z direction) and are individually connected to the plurality of surface electrodes (30), wherein the distance between the through wiring (53P) connected to the second surface electrode (33P) and the second light-emitting portion (83A) is longer than the distance between the through wiring (51P / 52P) connected to the first surface electrode (31P / 32P) and the first light-emitting portion (81A / 82A).

[0360] [Appendix B21] The semiconductor light emitting device according to Appendix B20, wherein each of the through wires (50) has an oval shape in plan view.

[0361] [Appendix B22] The semiconductor light-emitting device according to Appendix B21, wherein, in plan view, a direction perpendicular to the first direction (X direction) is defined as a second direction (Y direction), and, in plan view, each of the through wirings (50) is inclined with respect to both the first direction (X direction) and the second direction (Y direction).

[0362] [Appendix B23] The semiconductor light emitting device according to any one of Appendices B1 to B22, wherein the wire height of each of the first wires (110P / 120P) and the wire height of each of the second wires (130P) are different from each other.

[0363] [Appendix B24] The semiconductor light emitting device according to any one of Appendices B1 to B22, wherein the wire height of each of the first wires (110P / 120P) and the wire height of each of the second wires (130P) are the same.

[0364] [Appendix B25] The semiconductor light emitting device according to any one of Appendices B1 to B22, wherein the plurality of first wires (110P / 120P) include first wires having different wire heights.

[0365] [Appendix B26] The semiconductor light emitting device according to any one of Appendices B1 to B22, wherein the plurality of second wires (130P) include second wires having different wire heights.

[0366] [Appendix B27] The semiconductor light emitting device according to any one of Appendices B9 to B14, wherein the number of the end wires (140P) is equal to the number of the second wires (130P).

[0367] [Appendix B28] The semiconductor light emitting device according to any one of Appendices B9 to B14, wherein the number of the end wires (140P) is equal to the number of the first wires (110P / 120P).

[0368] [Appendix B29] The semiconductor light emitting device according to any one of Appendices B9 to B14, wherein the end wire (140P) extends along the first direction (X direction) in plan view.

[0369] [Appendix B30] The semiconductor light-emitting device described in Appendix B19, wherein an adhesive pattern (36) is formed on the substrate surface (21) in a plan view, surrounding the end-face light-emitting element (70), the plurality of surface electrodes (30), and the plurality of wires (100), and the case (200) is adhered to the adhesive pattern (36) with an adhesive.

[0370] [Appendix B31] The semiconductor light emitting device according to Appendix B30, wherein the case (200) is made of a glass material.

[0371] [Appendix B32] A light emitting device (70) comprising: a substrate (20) having a substrate front surface (21) and a substrate back surface (22); an edge light emitting device (70) disposed on the substrate (20) and having a plurality of light emitting portions (80A, 80B) arranged in a first direction (X direction) intersecting a thickness direction (Z direction) of the substrate (20) in a plan view; a plurality of surface electrodes (30) formed on the substrate front surface (21) and arranged spaced apart from each other; and a plurality of wires (100) electrically connecting the plurality of light emitting portions (80A, 80B) and the plurality of surface electrodes (30), wherein the plurality of light emitting portions (80A) include near light emitting portions (81A / 82A) provided with near element electrodes (81P / 82P), and a far light emitting portion (83A) provided with a far element electrode (83P), and the plurality of surface electrodes (30) A semiconductor light emitting device (10) comprising: near-surface electrodes (31P / 32P) electrically connected to the near-element electrodes (81P / 82P); and far-surface electrodes (33P) electrically connected to the far-element electrodes (83P), wherein the plurality of wires (100) comprise near wires (110P / 120P) electrically connecting the near-element electrodes (81P / 82P) and the near-surface electrodes (31P / 32P); and far wires (130P) electrically connecting the far-element electrodes (83P) and the far-surface electrodes (33P), wherein the number of the near wires (110P / 120P) is less than the number of the far wires (130P).

[0372] [Appendix B33] The semiconductor light-emitting device described in Appendix B32, wherein the plurality of light-emitting sections (80A) include edge light-emitting sections (84A) located at the ends of the edge light-emitting element (70) in the first direction (X direction) and provided with edge element electrodes (84P), the plurality of surface electrodes (30) include edge surface electrodes (34P) provided at the ends of the substrate surface (21) in the first direction (X direction), the plurality of wires (100) include edge wires (140P) electrically connecting the edge element electrodes (84P) and the edge surface electrodes (34P), and the number of the edge wires (140P) is less than the number of the far wires (130P).

[0373] The above description is merely illustrative. Those skilled in the art will recognize that many more possible combinations and permutations are possible other than the components and methods (manufacturing processes) listed for the purpose of illustrating the technology of the present disclosure. The present disclosure is intended to embrace all alternatives, modifications, and variations that fall within the scope of the present disclosure, including the claims.

[0374] DESCRIPTION OF SYMBOLS 10...Semiconductor light emitting device 10X...Comparative example semiconductor light emitting device 20...Substrate 21...Substrate surface 22...Substrate back surface 23-26...First to fourth substrate side surfaces 27...Front surface resist 30...Front electrode 31P, 31Q...First inner surface electrode 31A...First inner narrow portion 31B...First inner wide portion 31C...Inclined side 31D...Edge 32P, 32Q...Second inner surface electrode 32A...Second inner narrow portion 32B...Second inner wide portion 32C...Second inner inclined portion 32D, 32E...Inclined side 32F, 32G...Edge 33P, 33Q...Outer surface electrode 33A...First outer end 33B...Second outer end 33C...Outer inclined portion 33F, 33G, 33H, 33I...Edge 33D, 33E... Inclined sides 34P, 34Q... End surface electrodes 34A... End narrow portion 34B... End wide portion 34C... End side 34D... Inclined side 35... Mounting pattern 36... Adhesion pattern 37... Surface resist 40... Back surface electrode 41P, 41Q... First inner back surface electrode 42P, 42Q... Second inner back surface electrode 43P, 43Q... Outer back surface electrodes 44P, 44Q... End back surface electrodes 45... Element back surface electrodes 50... Through wiring 51P, 51Q... First inner through wiring 52P, 52Q... Second inner through wiring 53P, 53Q... Outer through wiring 54P, 54Q... End through wiring 55... Element through wiring 60... Back surface resist 61... First opening 62... Second opening 63, 63A, 63B... Third opening 70...Edge light emitting element 71...Element main surface 72...Element back surface 73-76...First to fourth element side surfaces 80...Element electrode 81P, 81Q...First inner element electrode 82P, 82Q...Second inner element electrode 83P, 83Q...Outer element electrode 84P, 84Q...End element electrode 80A...Light emitting portion 81A, 81B...First inner light emitting portion 82A, 82B...Second inner light emitting portion 83A, 83B...Outer light emitting portion 84A, 84B...End light emitting portion 85...Back electrode 90...Submount substrate 91...Front surface 92...Back surface 93...Through wiring 100...Wire 110P, 110Q...First inner wire 111...Element side bonding portion 112...Substrate side bonding portion 120P, 120Q...Second inner wire 121...Element side bonding portion 122...Board side joint part 130P,130Q...Outer wire 131...Element side bonding portion 132...Substrate side bonding portion 140P, 140Q...End wire 141...Element side bonding portion 142...Substrate side bonding portion 200...Case 211-214...First to fourth side walls 215...Top wall 310P, 310Q...First inner surface electrode 320P, 320Q...Second inner surface electrode 321...First portion 322...Second portion 323...Slanted side 324...Edge side 325...Slanted side 330P, 330Q...Outside surface electrode 331...Outside narrow width part 332...Outside wide part 333...Outside sloped part 334...Slanted side 335, 336...End side 337...Slanted side 338...Slanted side 340P, 340Q...End surface electrode 341... Narrow end portion 342... Wide end portion 343... End edge 344... Inclined edge 345... Narrow end portion 346... Wide end portion CL... Center virtual line G1... Maximum spacing of first inner wire G2... Maximum spacing of second inner wire G3... Maximum spacing of outer wire G4... Maximum spacing of end wires

Claims

1. a substrate having a substrate front surface and a substrate back surface; an edge light emitting device disposed on the substrate and having a plurality of light emitting units arranged in a first direction intersecting a thickness direction of the substrate in a plan view; a plurality of surface electrodes formed on the surface of the substrate and spaced apart from one another; a plurality of wires electrically connecting the plurality of light-emitting portions and the plurality of surface electrodes; Equipped with The plurality of light-emitting units include: a first light-emitting section provided with a first element electrode; a second light-emitting portion provided with a second element electrode; Including, The plurality of surface electrodes are a first surface electrode electrically connected to the first element electrode; a second surface electrode electrically connected to the second element electrode; Including, The plurality of wires a plurality of first wires electrically connecting the first element electrodes and the first surface electrodes; a plurality of second wires electrically connecting the second element electrodes and the second surface electrodes; Including, In a plan view, the maximum interval between adjacent second wires in the first direction is wider than the maximum interval between adjacent first wires in the first direction. Semiconductor light-emitting device.

2. The number of the first wires is less than the number of the second wires. The semiconductor light emitting device according to claim 1 .

3. the second surface electrode is disposed closer to an end of the substrate surface than the first surface electrode in the first direction; The distance between the second surface electrode and the second light-emitting unit is longer than the distance between the first surface electrode and the first light-emitting unit. The semiconductor light emitting device according to claim 1 .

4. The second surface electrode is an end side extending in a second direction perpendicular to the first direction in a plan view; an inclined side inclined in a direction approaching the second light-emitting unit as it moves from the end side toward the center of the substrate surface in the first direction; a second inclined portion including the inclined side and extending further toward the center of the substrate surface than the end side, The second wire is joined to the second inclined portion. The semiconductor light emitting device according to claim 1 .

5. the first wire is joined to a portion of the first surface electrode that is farther from the first light-emitting unit than a center of the first surface electrode in the second direction; The second wire is joined to a portion of the second surface electrode that is closer to the second light-emitting unit than the center in the second direction. The semiconductor light emitting device according to claim 4 .

6. The second wire is joined to a portion of the second inclined portion that is close to the second light-emitting portion. The semiconductor light emitting device according to claim 5 .

7. the second surface electrode includes a second wide portion at an end closer to the second light-emitting portion than the second inclined portion, the second wide portion having a width in the first direction wider than the second inclined portion; A portion of the second wire is joined to the second wide portion. The semiconductor light emitting device according to claim 5 .

8. The second surface electrode is are also arranged near the edge of the substrate surface, The first surface electrode is a first narrow portion formed near the first light emitting portion; a first inclined portion adjacent to the second inclined portion in the first direction and inclined in a direction approaching the first light-emitting portion as it moves toward the center of the substrate surface in the first direction, At least a portion of the first wire is joined to the first inclined portion. The semiconductor light emitting device according to claim 5 .

9. When viewed from the second direction, a portion of the second wire is disposed at a position where it partially overlaps with the first wire. The semiconductor light emitting device according to claim 5 .

10. The number of the first wires and the number of the second wires are the same. The semiconductor light emitting device according to claim 1 .

11. the plurality of light-emitting portions include edge light-emitting portions located at ends of the edge light-emitting element in the first direction and provided with edge element electrodes, the plurality of surface electrodes include end surface electrodes provided at ends of the substrate surface in the first direction, The plurality of wires includes an end wire that electrically connects the end element electrode and the end surface electrode. The semiconductor light emitting device according to claim 1 .

12. the end surface electrode has a wide end portion and a narrow end portion; The end wire is joined to the end narrow portion. The semiconductor light emitting device according to claim 11 .

13. The end wires are provided in plurality, the end narrow portion extends in a second direction perpendicular to the first direction in a plan view, The joints between the plurality of end wires and the end narrow portions are aligned in the first direction and spaced apart in the second direction. The semiconductor light emitting device according to claim 12.

14. the number of the end wires and the number of the second wires are the same; The total length of the plurality of end wires is shorter than the total length of the plurality of second wires. The semiconductor light emitting device according to claim 11 .

15. the edge surface electrode is disposed closer to an edge of the substrate surface than the edge light emitting element in the first direction and at a position opposite to the edge element electrode in the first direction in a plan view, The second surface electrode includes a portion that is disposed closer to the center of the substrate surface than the end surface electrode in the first direction. The semiconductor light emitting device according to claim 11 .

16. The plurality of first wires include first wires of different lengths. The semiconductor light emitting device according to claim 1 .

17. The plurality of second wires include second wires of different lengths. The semiconductor light emitting device according to claim 1 .

18. In a plan view, a direction perpendicular to the first direction is defined as a second direction, In a plan view, the plurality of wires are symmetrical about a virtual line extending from the center of the substrate surface in the first direction along the second direction. The semiconductor light emitting device according to claim 1 .

19. In a plan view, a direction perpendicular to the first direction is defined as a second direction, In a plan view, the plurality of surface electrodes are symmetrical about a virtual line extending from the center of the substrate surface in the first direction along the second direction. The semiconductor light emitting device according to claim 1 .

20. In a plan view, a direction perpendicular to the first direction is defined as a second direction, a case connected to the surface of the substrate, covering the edge light emitting element, the plurality of surface electrodes, and the plurality of wires, and transparent in at least the emission direction of the edge light emitting element in the second direction; The semiconductor light emitting device according to any one of claims 1 to 19.