Pad conditioner and chemical mechanical planarization apparatus

Abstract

A pad conditioner and a chemical mechanical planarization apparatus, wherein the pad conditioner comprises a swing arm; an adjusting assembly disposed at one end of the swing arm, wherein the adjusting assembly comprises an airtight chamber; a conditioning disk, disposed on one side of the adjusting assembly that is away from the swing arm, wherein the adjusting assembly is configured to drive the conditioning disk to move in a direction towards or away from the adjusting assembly by deformation of the airtight chamber; a pressure detecting unit, embedded in the airtight chamber and configured to detect an internal gas pressure within the airtight chamber; and a control unit, configured to determine a wording state of the pad conditioner based on the internal gas pressure.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims priority to Chinese Patent Application No. 202421293222.2, filed on Jun. 6, 2024, which is hereby incorporated by reference in its entirety.TECHNICAL FIELD

[0002] The present application relates to the field of chemical mechanical planarization apparatus, and in particular to a pad conditioner and a chemical mechanical planarization apparatus.BACKGROUND

[0003] Chemical Mechanical Planarization (CMP) is a critical process in integrated circuit manufacturing for achieving wafer surface planarization. The primary working principle of CMP is that under a certain pressure and in the presence of a polishing liquid, the wafer makes a relative motion against the polishing pad. With the aid of highly integrated combination between the mechanical polishing action of nano-abrasives and the chemical action of various types of chemical reagents, the surface of the wafer may achieve requirements of a high planarization, low surface roughness and low defects. After CMP, by-products such as particles solidified by the polishing liquid are left on the polishing pad, and these residual by-products may affect the subsequent wafer polishing process, thus affecting the yield of wafer. Therefore, it is necessary to use a pad conditioner (PC) to condition the surface of the polishing pad regularly. The pad conditioner is typically integrated into the CMP apparatus. When conditioning of the polishing pad is not required, there is a certain distance between the conditioning disk, which is used to condition the surface of the grinding pad in the PC, and the polishing pad. When conditioning of the polishing pad is required, the conditioning disk is lowered to bring the conditioning disk into contact with the polishing pad, and the conditioning disk is driven to rotate so as to clean the polishing pad.

[0004] However, in the process of conditioning the polishing pad by the pad conditioner, the pressure of the conditioning disk against the polishing pad is difficult to be detected in time. And if the pressure deviates, it may affect the conditioning effect of the polishing pad, which may in turn affect the polishing rate of the wafer in the subsequent polishing process, further affecting the yield of wafer. Therefore, there is an urgent need for an optimized pad conditioner that can detect the pressure of the conditioning disk against the polishing pad in time during the conditioning process to avoid damage to the polishing pad.SUMMARY

[0005] According to various embodiments of the present application, one aspect of the present application provides a pad conditioner, comprising: a swing arm; an adjusting assembly, disposed at one end of the swing arm and comprising an airtight chamber; a conditioning disk, disposed on one side of the adjusting assembly that is away from the swing arm, wherein the adjusting assembly is configured to drive the conditioning disk to move in a direction towards or away from the adjusting assembly by deformation of the airtight chamber; a pressure detecting unit, embedded in the airtight chamber and configured to detect an internal gas pressure within the airtight chamber; and a control unit, configured to receive the internal gas pressure and determine a working state of the pad conditioner based on the internal gas pressure.

[0006] Another aspect of the present application provides a chemical mechanical planarization apparatus comprising a pad conditioner and a polishing pad, wherein the pad conditioner is configure to condition the polishing pad, and the pad conditioner comprises: a swing arm; an adjusting assembly, disposed at one end of the swing arm and comprising an airtight chamber; a conditioning disk, disposed on one side of the adjusting assembly that is away from the swing arm, wherein the adjusting assembly is configured to drive the conditioning disk to move in a direction towards or away from the adjusting assembly by deformation of the airtight chamber; a pressure detecting unit, embedded in the airtight chamber and configured to detect an internal gas pressure within the airtight chamber; and a control unit, configured to receive the internal gas pressure and determine a working state of the pad conditioner based on the internal gas pressure.BRIEF DESCRIPTION OF DRAWINGS

[0007] To describe the technical solutions in embodiments of the present application or in the prior art more clearly, the following briefly introduces the accompanying drawings needed for describing the embodiments or the prior art. Apparently, the accompanying drawings in the following description illustrate merely some embodiments of the present application, and for persons of ordinary skill in the art, other drawings may still be obtained from these accompanying drawings without creative effort.

[0008] FIG. 1 is a schematic diagram illustrating a working scenario of a pad conditioner according to embodiments of the present application.

[0009] FIG. 2 is a structural schematic diagram showing measurement of pressure of a pad conditioner acting onto a polishing pad using a pressure meter according to embodiments of the present application.

[0010] FIG. 3 is a top-view schematic diagram showing a damaged polishing pad according to embodiments of the present application.

[0011] FIG. 4 is a cross-sectional schematic diagram showing an overall structure of a pad conditioner according to embodiments of the present application.

[0012] FIG. 5 is a cross-sectional schematic diagram showing a partial structure of a pad conditioner according to embodiments of the present application.

[0013] FIG. 6 is a schematic diagram illustrating a working principle of a pad conditioner according to embodiments of the present application.DESCRIPTION OF REFERENCE SIGNS11—Swing arm; 111—Gas pipe; 12—Adjusting assembly; 120—Central shaft; 121—Cylinder; 122—Supporting component; 123—Rotating component; 1230—Inlet; 127—Gas film; 1270—Outer edge; 1271—Inner edge; 128—Airtight chamber; 13—Conditioning disk; 14—Pressure detecting unit; 20—Pad conditioner; 23—Polishing pad; 231—Scratch; 31—Handle; 32—Pressure meter; 110—Converter; 1101—Proportional valve; 130—Control unit; 140—Alarm; 141—Switch; 150—DisplayDESCRIPTION OF EMBODIMENTS

[0015] In order to facilitate an understanding of the present application, the present application will be described more fully below with reference to the relevant accompanying drawings. Embodiments of the present application are given in the accompanying drawings. However, the present application can be realized in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to make the content of the present application more thorough and comprehensive.

[0016] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the field to which the present application belongs. Terms used herein in the specification of the present application are used only for the purpose of describing specific embodiments and are not intended to limit the present application.

[0017] In the case of using “including,”“having,” and “comprising” as described herein, unless explicitly limited by terms such as “only” or “consisting of,” additional components may be added. Unless otherwise stated, singular forms of terms may include plural forms and should not be interpreted as being limited to a single item.

[0018] In the description of the present application, it should be noted that unless otherwise explicitly defined and limited, the terms “connect to” or “connect with” should be interpreted broadly. For example, it can refer to a fixed connection, a detachable connection, or an integral connection; it can be a direct connection or an indirect connection through an intermediate medium, or it can refer to internal communication between two components. For those skilled in the art, the specific meaning of the aforementioned terms in the present application can be understood based on the context.

[0019] When used herein, the singular forms “a,”“an,” and “the” may also include plural forms unless the context clearly dictates otherwise. It should also be understood that terms such as “include” / “comprise,” or “have” specify the presence of the stated features, entirety, steps, operations, components, parts, or combinations thereof, but do not preclude the presence or addition of one or more other features, entireties, steps, operations, components, parts, or combinations thereof. Additionally, the term “and / or” as used in this specification includes any and all combinations of the listed related items.

[0020] Chemical mechanical planarization (CMP) is important in modern semiconductor manufacturing. Chemical mechanical planarization combines both chemical etching and mechanical polishing to remove uneven materials on the wafer surface structure and flatten the wafer surface structure on an atomic-level. The polishing pad in chemical mechanical planarization apparatus needs to be replaced in time and maintained regularly, and the newly replaced polishing pad, due to its high hardness, also needs to go through a period of running-in to achieve the ideal surface texture, thereby realizing the polishing efficiency and uniformity. There are numerous factors that affect polishing effect, such as composition of polishing liquid, etching rate, a type of abrasive particulate material, material, hardness, elasticity modulus, and surface wear of polishing pad, temperature, pressure, rotation speed, and nonlinear hydrodynamics in the polishing process.

[0021] As shown in FIG. 1, as an example, during chemical mechanical planarization, the wafer being polished (not shown) is forced to move relative to the grinding pad 23, while the polishing liquid is continually dripped onto the polishing pad 23 to remove the material on the wafer surface that needs to be removed after reacting mildly with the chemical components in the polishing liquid. During the polishing process, byproducts, such as particles solidified from the polishing liquid, may remain in the grooves on the surface of the polishing pad 23. These residual byproducts can affect subsequent wafer polishing processes, thereby impacting the yield of wafer. Therefore, a pad conditioner 20 can be used periodically to condition the surface of the polishing pad 23, preventing the polishing byproducts from filling the grooves of the polishing pad 23. The pad conditioner 20 is generally integrated into the CMP apparatus, and includes a swing arm 11 and a conditioning disk 13. When there is no need to condition the polishing pad 23, the conditioning disk 13 is kept from the surface of the polishing pad 23 by a certain distance; and when the polishing pad 23 needs to be conditioned, the conditioning disk 13 is lowered to allow the conditioning disk 13 to come into contact with the surface of the polishing pad 23. A pressure can be applied by the pad conditioner 20, causing relative motion between the conditioning disk 13 and the polishing pad 23 for removing the byproducts on the polishing pad 23, thereby conditioning the polishing pad 23.

[0022] As shown in FIGS. 1-3, the pad conditioner 20 in the chemical mechanical planarization apparatus is used to condition and adjust the polishing pad 23, to roughen the surface of the polishing pad 23 and to flatten the polishing pad 23, so as to polish the wafer uniformly. The pad conditioner 20 can condition the surface of the polishing pad 23 by the conditioning disk 13 of the pad conditioner 20. During the process of conditioning the surface of the polishing pad 23 by the conditioning disk 13, the conditioning pressure of the conditioning disk 13 onto the polishing pad 23 (i.e., the interaction force between the conditioning disk 13 and the polishing pad 23 during the conditioning process) is a critical factor influencing the conditioning effect on the surface of the polishing pad 23. Maintaining a stable and controllable conditioning pressure of the conditioning disk 13 can benefit the conditioning effect.

[0023] Currently, the conditioning pressure fed back by the chemical mechanical planarization apparatus is provided by a cleaning system integrated within the planarization apparatus. The conditioning pressure is not a true conditioning pressure and the CMP apparatus is not capable of detecting the true conditioning pressure in time and accurately. Additionally, as shown in FIG. 2, a conventional method for detecting the conditioning pressure is: usually, during maintenance of the CMP apparatus, a maintenance engineer uses a pressure measuring instrument, and connects a handle 31 of the pressure measuring instrument to a pressure meter 32, the pressure meter 32 is used to sense a downward pressure exerted by the conditioning disk 13 of the pad conditioner 20 during operation and transmit a pressure result to the handle 31 of the pressure measuring instrument, thereby achieving the measurement and calibration of the conditioning pressure of the conditioning disk 13. However, the pressure detected by this measurement method is not the actual conditioning pressure exerted by the conditioning disc 13 onto the polishing pad 23 during the conditioning process, and also the detecting method increases labor costs. Therefore, when the conditioning pressure of the conditioning disk 13 onto the polishing pad 23 deviates during the conditioning process, it is difficult for conventional technologies to identify the abnormal pressure timely. This often results in scratches 231 on the polishing pad 23 as shown in FIG. 3), causing wafer damage and further affecting the yield of wafer.

[0024] Based on this, it is necessary to provide a pad conditioner and a chemical mechanical planarization apparatus to solve the problems mentioned above, which can detect the pressure change of the polishing conditioner against the polishing pad in time in the process of conditioning the polishing pad, identify abnormal pressure in time, reduce the probability of damage to the polishing pad, and avoid the damage to the wafer product.

[0025] As shown in FIGS. 4-6, embodiments of the present application provide a pad conditioner 20. The pad conditioner 20 may include a swing arm 11, an adjusting assembly 12, a conditioning disk 13, a pressure detecting unit 14, and a control unit 130. The adjusting assembly 12 may be disposed at one end of the swing arm 11, and the adjusting assembly 12 includes an airtight chamber 128. The conditioning disk 13 may be disposed on one side of the adjusting assembly 12 that is away from the swing arm 11, and the adjusting assembly 12 is configured to drive the conditioning disk 13 to move in a direction towards or away from the adjusting assembly 12 by deformation of the airtight chamber 128. The pressure detecting unit 14 may be embedded in the airtight chamber 128 and is configured to detect an internal gas pressure within the airtight chamber 128. The control unit 130 may be configured to receive the internal gas pressure and to determine a working state of the pad conditioner 20.

[0026] In some embodiments, the adjusting assembly 12 drives the conditioning disk 13 to move in a direction towards or away from the adjusting assembly 12 by the deformation of the airtight chamber 128. In other words, a change in displacement of the conditioning disk 13 in the direction towards or away from the adjusting assembly 12 also results in the deformation of the airtight chamber 128, and thus changes the internal gas pressure within the airtight chamber 128. Thus, by detecting the internal gas pressure within the airtight chamber 128 through the pressure detecting unit 14 embedded in the airtight chamber 128 of the pad conditioner 20, the control unit 130 may be configured to receive the internal gas pressure within the airtight chamber 128 and determine the working state of the pad conditioner 20 based on the internal gas pressure. The accurate measurement and timely adjustment of the conditioning pressure of the conditioning disk 13 onto the pad conditioner 20 may be realized, avoiding the interference of human factors in the measurement, realizing in-time detection and accurate measurement, avoiding abnormal conditioning pressure leading to damage to the polishing pad 23, thereby avoiding damage to the wafer product and reducing the labor cost of detection.

[0027] In some embodiments, as shown in FIGS. 4-5, the adjusting assembly 12 may further include a cylinder 121, a supporting component 122, a central shaft 120 and a gas film 127. The cylinder 121 may be connected to the swing arm 11. The supporting component122 may be disposed within the cylinder 121, extending along an axial direction of the adjusting assembly 12 (e.g., extension direction of axis x in FIG. 5). One end 1201 of the central shaft 120 that is close to the swing arm 11 is slidably connected to the supporting component 122, and the other end 1202 of the central shaft 120 that is away from the swing arm 11 may extend out of the cylinder 121 and may be connected to the conditioning disk 13. The central shaft 120 is configured to drive the conditioning disk 13 to move in a direction towards or away from the adjusting assembly 12 (e.g., z direction in FIGS. 4-5). The gas film 127 may be annular in shape and disposed within the cylinder 121. The gas film 127 includes an outer edge 1270 and an inner edge 1271. The outer edge 1270 of the gas film 127 may be fixedly connected to an inner wall of the cylinder 121, and the inner edge 1271 of the gas film 127 may be fixedly connected to an outer wall of the central shaft 120. In some embodiments, the airtight chamber 128 may be formed by the gas film 127, together with the cylinder 121, the central shaft 120 and the supporting component 122.

[0028] In some embodiments, please continue to refer to FIGS. 4-5, one end of the cylinder 121 that is close to the swing arm 11 may be provided with an opening, and a rotating component 123 may be arranged at the opening. The rotating component 123 can drive the supporting component 122 to rotate around the axis of the adjusting assembly 12 (e.g., extension direction of axis x in FIG. 5). The outer edge 1270 of the gas film 127 may be fixedly connected to the rotating component 123. In these embodiments, the airtight chamber 128 may be formed by the gas film 127, tighter with the rotating component 123, the central shaft 120 and the supporting component 122.

[0029] Please continue to refer to FIGS. 4-5, a motor (not shown) may be provided on the swing arm 11, and the rotation of the motor may drive the rotating component 123 to rotate synchronously, thereby reducing the wiring complexity of the pressure detecting unit 14.

[0030] In some embodiments, please continue to refer to FIGS. 4-5, the rotating component 123 may be provided with an inlet 1230. The inlet 1230 is configured to introduce a gas into the airtight chamber 128 or extract gas from the airtight chamber 128 so as to drive the gas film 127 to deform, which in turn drives the central shaft 120 to move in a direction towards or away from the swing arm 11 (e.g., z-direction in FIGS. 4-5).

[0031] In some embodiments, please continue to refer to FIGS. 4-5, the pad conditioner 20 may be further provided with a gas pipe 111. One end of the gas pipe 111 that is close to the adjusting assembly 12 may be communicated with the inlet 1230, and the other end of the gas pipe 111 may be communicated with an external gas source (not shown).

[0032] In some embodiments, as shown in FIGS. 4-6, the pad conditioner may include a pressure detecting unit 14 and a converter 110. The pressure detecting unit 14 may be embedded within the airtight chamber 128 of the pad conditioner 20 and is configured to detect the internal gas pressure within the airtight chamber 128. As described above, the expansion or contraction of the gas film 127 drives the central shaft 120 to move in the direction towards or away from the swing arm 11, and thus drives the conditioning disk 13 to move in the direction towards or away from the swing arm 11, thereby changing a distance of the conditioning disk 13 with respect to the polishing pad 23 (as shown in FIG. 4). During the conditioning process of the polishing pad 23 by the conditioning disk 13, the conditioning pressure of the conditioning disk 13 generally remains constant. Once the conditioning pressure changes, the conditioning disk 13 may be displaced in a direction towards or away from the swing arm 11, which in turn causes the gas film 127 to expand or contract, thereby affecting the internal gas pressure within the airtight chamber 128. The pressure detecting unit 14 may be sealed within the airtight chamber 128 and connected to the converter 110. There is a relationship between the conditioning pressure of the conditioning disk 13 and the internal gas pressure within the airtight chamber 128. The relationship may be, for example, linear. The pressure detecting unit 14 may use this relationship to convert the internal gas pressure within the airtight chamber 128 into a detection pressure value corresponding to the conditioning pressure of the conditioning disk 13. In this way, embodiments of the present application may obtain a more accurate detection pressure value corresponding to the actual conditioning pressure compared to traditional detection methods, and may achieve in-time monitoring of the conditioning pressure, avoiding human interference in the measurement, reducing the likelihood of damage to the polishing pad 23, and lowering the labor costs associated with detection.

[0033] Please continue to refer to FIGS. 4-6, the pad conditioner may further include a control unit 130 and an alarm 140. The control unit 130 may be connected to the converter 110 and used to generate an alarm command when the detection pressure value falls out of a preset pressure range. For instance, the preset pressure range may be a target pressure value±0.3 pounds-force, wherein the target pressure value may be a conditioning pressure of the conditioning disk 13 under normal working condition. When the detection pressure value obtained by the converter 110 exceeds the preset pressure range, an alarm command may be automatically generated. The alarm 140 may be connected to the control unit 130 and is configured to receive the alarm command and execute a corresponding alarm action. For example, the alarm action can be set to shut down the CMP apparatus. In this way, any abnormality in the conditioning pressure of the conditioning disk 13 can be timely detected, and the chemical mechanical planarization apparatus can be stopped and thus reduces the likelihood of damage to the polishing pad 23 or the wafer product.

[0034] In some embodiments, please continue to refer to FIG. 6, the detection pressure value outputted by the converter 110 can be transmitted to the control unit 130, to generate a pressure graph. The pressure graph can be a line graph, a dot graph or a chart, making the detection results visualized. Furthermore, the pad conditioner can further include a display 150. The display 150 can be connected to the converter 110 and used to receive and display the detection pressure value and / or the pressure graph formed by the converter 110. Therefore, an operator of the pad conditioner can monitor the conditioning pressure of the conditioning disk 13 in time and identify the abnormal pressure condition promptly.

[0035] As an example, please continue to refer to FIG. 6, the alarm 140 may include a switch 141. The switch 141 may be connected to the control unit 130. The switch 141 may be connected in series with the pad conditioner and a power supply, so that the switch 141 can receive the alarm command and disconnect an electrical connection between the pad conditioner and the power supply, thereby preventing damage to the polishing pad and enabling timely inspection of the pad conditioner.

[0036] As an example, please continue to refer to FIG. 6, the converter 110 may include a proportional valve 1101, and the proportional valve 1101 may be connected to the pressure detecting unit 14. The proportional valve 1101 is used to generate the detection pressure value by the received internal gas pressure within the airtight chamber. The proportional valve 1101 may be an electro-pneumatic proportional valve.

[0037] As an example, the pressure detecting unit 14 may include a gas pressure sensor, and the gas pressure sensor may be embedded in the airtight chamber of the pad conditioner and used to detect the internal gas pressure within the airtight chamber.

[0038] In some embodiments, the gas pressure sensor may include a housing, a pressure chip, and a diaphragm. The housing may be internally provided with a cavity and externally provided with a mounting portion. The mounting portion is used to attach the housing to the airtight chamber. The pressure chip may be encapsulated within the cavity. The diaphragm may be located on one side of the pressure chip that is away from the mounting portion of the housing, and the diaphragm is used to seal the pressure chip and transmit the internal gas pressure within the airtight chamber to the pressure chip, thereby achieving the precise measurement of the conditioning pressure.

[0039] In some embodiments, the pressure chip may include a diffused silicon pressure-sensitive chip. Agas pressure sensor equipped with a diffused silicon pressure-sensitive chip could measure a small-range pressure and have high sensitivity and high measurement accuracy.

[0040] In some embodiments, the connection between the gas pressure sensor and the airtight chamber may be sealed with a sealing ring to ensure the accuracy of pressure measurement.

[0041] In some embodiments, the cavity of the housing may be filled with a buffer fluid sealed within the cavity and located between the diffused silicon pressure-sensitive chip and the diaphragm. The buffer fluid is configured to transmit, to the pressure chip, the internal gas pressure within the airtight chamber formed on the diaphragm.

[0042] In some embodiments, the housing of the gas pressure sensor may be made by 316L stainless steel. The diaphragm is made by stainless steel or ceramic. The buffer fluid may include silicone oil. By encapsulating the diffused silicon pressure-sensitive chip into a 316L stainless steel housing and sealing the silicone oil into the cavity by the stainless steel diaphragm, the applied external pressure can be transmitted to the pressure-sensitive chip through the stainless steel diaphragm and the internally sealed silicone oil, and a fully solid-state structure for pressure measurement is formed. The pressure-sensitive chip may not come into direct contact with the measured medium, which may help the pressure-sensitive chip to achieve a precise pressure measurement.

[0043] Another aspect of embodiments of the present application provides a chemical mechanical planarization apparatus, which includes a pad conditioner and a polishing pad. The pad conditioner is configured to condition the polishing pad, and the pad conditioner is as described in any one of the aforementioned embodiments.

[0044] Exemplarily, when the pad conditioner in the chemical mechanical planarization apparatus conditions the polishing pad of the chemical mechanical planarization apparatus, a gas pressure within the airtight chamber can be detected by the pressure detecting unit which embedded in the airtight chamber. The converter that connected to the pressure detecting unit receives the gas pressure within the airtight chamber and converts it into a detection pressure value corresponding to the conditioning pressure of the conditioning disk to the polishing pad. When the detection pressure value exceeds a preset pressure range, an alarm command is automatically generated. The alarm of the pad conditioner receives the alarm command and executes a corresponding alarm action, so as to detect any abnormality in the conditioning pressure in time and shut down the chemical mechanical planarization apparatus. The display of the pad conditioner receives and displays the detection pressure value. Additionally, the in-time monitoring of the conditioning pressure is achieved, which may ensure timely detection of abnormal conditioning pressure, achieve precise measurement, eliminating human interference in the measurement, preventing damage to the polishing pad due to abnormal pressure, and thus avoiding damage to wafer products while reducing labor costs of detection.

[0045] In the description of this specification, references to terms such as “some embodiments” or “other embodiments” mean that the specific features, structures, materials, or characteristics described in connection with the embodiments or examples are included in at least one embodiment or example of the present application. In this specification, the illustrative descriptions of these terms do not necessarily refer to the same embodiment or example.

[0046] The technical features of the embodiments described above can be combined in any manner. To keep the description concise, not all possible combinations of the technical features in the above embodiments have been described. However, as long as the combinations of these technical features do not contradict each other, they should all be considered within the scope of this specification.

[0047] The embodiments described above illustrate only several implementation modes of the present application, and their descriptions are relatively specific and detailed. Nevertheless, this should not be interpreted as a limitation on the scope of the present application. It should be noted that for those skilled in the art, various modifications and improvements can be made without departing from the concept of the present application, and all of them fall within the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the appended claims.

Claims

1. A pad conditioner, comprising:a swing arm;an adjusting assembly disposed at one end of the swing arm, wherein the adjusting assembly comprises an airtight chamber;a conditioning disk, disposed on one side of the adjusting assembly that is away from the swing arm, wherein the adjusting assembly is configured to drive the conditioning disk to move in a direction towards or away from the adjusting assembly by deformation of the airtight chamber;a pressure detecting unit, embedded in the airtight chamber and configured to detect an internal gas pressure within the airtight chamber; anda control unit, configured to receive the internal gas pressure and determine a working state of the pad conditioner.

2. The pad conditioner according to claim 1, wherein the adjusting assembly further comprises: a cylinder, a supporting component, a central shaft, and a gas film;the cylinder is connected to the swing arm;the supporting component is disposed within the cylinder, wherein the supporting component extends along an axial direction of the adjusting assembly;one end of the central shaft that is close to the swing arm is slidably connected to the supporting component, and the other end of the central shaft that is away from the swing arm is connected to the conditioning disk, wherein the central shaft extends out of the cylinder and the central shaft is configured to drive the conditioning disk to move in a direction towards or away from the adjusting assembly; andthe gas film, that is annular in shape, is disposed within the cylinder, wherein an outer edge of the gas film is connected to an inner wall of the cylinder, and an inner edge of the gas film is connected to an outer wall of the central shaft, andthe airtight chamber is formed by the gas film, together with the cylinder, the central shaft, and the supporting component.

3. The pad conditioner according to claim 2, whereinone end of the cylinder that is close to the swing arm is provided with an opening, and a rotating component is arranged at the opening, the rotating component is configured to drive the supporting component to rotate around the axis of the adjusting assembly;the outer edge of the gas film is connected to the rotating component, and the airtight chamber is formed by the gas film, together with the rotating component, the central shaft and the supporting component.

4. The pad conditioner according to claim 3, wherein the rotating component is provided with an inlet for introducing gas into the airtight chamber or extracting gas from the airtight chamber, wherein the introducing or the extracting of the gas causes deformation of the airtight chamber, thereby driving the central shaft to move in a direction towards or away from the swing arm.

5. The pad conditioner according to claim 4, further comprising:a gas pipe, wherein one end of the gas pipe that is close to the adjusting assembly is communicated with the inlet and the other end of the gas pipe is communicated with an external gas source.

6. The pad conditioner according to claim 1, wherein the pressure detecting unit comprises a housing, a pressure chip and a diaphragm;the housing is internally provided with a cavity and externally provided with a mounting portion, wherein the mounting portion is configured to attach the housing to an inner side of the airtight chamber;the pressure chip is encapsulated within the cavity, wherein the diaphragm is located on one side of the pressure chip that is away from the mounting portion of the housing; andthe diaphragm is configured to seal the pressure chip and transmit the internal gas pressure within the airtight chamber to the pressure chip.

7. The pad conditioner according to claim 6, wherein the pressure chip comprises a diffused silicon pressure-sensitive chip.

8. The pad conditioner according to claim 7, wherein the cavity is filled with a buffer fluid; andthe buffer fluid is sealed within the cavity and located between the diffused silicon pressure-sensitive chip and the diaphragm, and the buffer fluid is configured to transmit the internal gas pressure within the airtight chamber provided by the diaphragm to the pressure chip.

9. The pad conditioner according to claim 1, wherein determining a working state of the pad conditioner is further configured to:in response to the internal gas pressure exceeding a preset pressure range, shut down the pad conditioner.

10. A chemical mechanical planarization apparatus, comprising a pad conditioner and a polishing pad, wherein the pad conditioner is configured to condition the polishing pad, and the pad conditioner comprises:a swing arm;an adjusting assembly disposed at one end of the swing arm, wherein the adjusting assembly comprises an airtight chamber;a conditioning disk, disposed on one side of the adjusting assembly that is away from the swing arm, wherein the adjusting assembly is configured to drive the conditioning disk to move in a direction towards or away from the adjusting assembly by deformation of the airtight chamber;a pressure detecting unit, embedded in the airtight chamber and configured to detect an internal gas pressure within the airtight chamber;and a control unit, configured to receive the internal gas pressure and determine a working state of the pad conditioner.

11. The chemical mechanical planarization apparatus according to claim 10, wherein the adjusting assembly further comprises: a cylinder, a supporting component, a central shaft, and a gas film;the cylinder is connected to the swing arm;the supporting component is disposed within the cylinder, wherein the supporting component extends along an axial direction of the adjusting assembly;one end of the central shaft that is close to the swing arm is slidably connected to the supporting component, and the other end of the central shaft that is away from the swing arm is connected to the conditioning disk, wherein the central shaft extends out of the cylinder and the central shaft is configured to drive the conditioning disk to move in a direction towards or away from the adjusting assembly; andthe gas film, that is annular in shape, is disposed within the cylinder, wherein an outer edge of the gas film is connected to an inner wall of the cylinder, and an inner edge of the gas film is connected to an outer wall of the central shaft, andthe airtight chamber is formed by the gas film, together with the cylinder, the central shaft, and the supporting component.

12. The chemical mechanical planarization apparatus according to claim 11, whereinone end of the cylinder that is close to the swing arm is provided with an opening, and a rotating component is arranged at the opening, the rotating component is configured to drive the supporting component to rotate around the axis of the adjusting assembly;the outer edge of the gas film is connected to the rotating component, and the airtight chamber is formed by the gas film, together with the rotating component, the central shaft and the supporting component.

13. The chemical mechanical planarization apparatus according to claim 12, wherein the rotating component is provided with an inlet for introducing gas into the airtight chamber or extracting gas from the airtight chamber, wherein the introducing or the extracting of the gas causes the deformation of the airtight chamber, thereby driving the central shaft to move in a direction towards or away from the swing arm.

14. The chemical mechanical planarization apparatus according to claim 13, wherein the pad conditioner further comprises:a gas pipe, wherein one end of the gas pipe that is close to the adjusting assembly is communicated with the inlet and the other end of the gas pipe is communicated with an external gas source.

15. The chemical mechanical planarization apparatus according to claim 10, wherein the pressure detecting unit comprises a housing, a pressure chip and a diaphragm;the housing is internally provided with a cavity and externally provided with a mounting portion, wherein the mounting portion is configured to attach the housing to an inner side of the airtight chamber;the pressure chip is encapsulated within the cavity, wherein the diaphragm is located on one side of the pressure chip that is away from the mounting portion of the housing; andthe diaphragm is configured to seal the pressure chip and transmit the internal gas pressure within the airtight chamber to the pressure chip.

16. The chemical mechanical planarization apparatus according to claim 15, wherein the pressure chip comprises a diffused silicon pressure-sensitive chip.

17. The chemical mechanical planarization apparatus according to claim 16, wherein the cavity is filled with a buffer fluid; andthe buffer fluid is sealed within the cavity and located between the diffused silicon pressure-sensitive chip and the diaphragm, and the buffer fluid is configured to transmit the internal gas pressure within the airtight chamber provided by the diaphragm to the pressure chip.

18. The chemical mechanical planarization apparatus according to claim 10, wherein determining a working state of the pad conditioner is further configured to:in response to the internal gas pressure exceeding a preset pressure range, shut down the pad conditioner.

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