Deposition module and thin film deposition apparatus comprising same

Abstract

The present invention relates to a deposition module capable of uniformly depositing a source material on the entire substrate and a thin film deposition apparatus comprising same. The deposition module may comprise: a source material nozzle unit that extends in a first direction and sprays a source material; and a source material distribution line that distributes the source material in the first direction and supplies same to the source material nozzle unit, and the source material nozzle unit may comprise: a source nozzle plate that has an opening formed along the first direction; a source buffer unit that provides a diffusion space for the source material distributed and supplied from the source material distribution line; and a source blocking plate that has a larger area than the opening of the source nozzle plate and is provided on the source nozzle plate in the diffusion space of the source material.

Description

Deposition module and thin film deposition device including the same

[0001] The present invention relates to a deposition module and a thin film deposition device including the same, and more particularly, to a deposition module capable of uniformly depositing a source material over the entire substrate and a thin film deposition device including the same.

[0002] Atomic layer deposition (ALD) is a thin film deposition technique for depositing one or more thin layers of material on a substrate. ALD utilizes two types of chemicals: a source precursor and a reactant. Typically, ALD involves four steps: injecting the source precursor, removing the physisorbed layer of the source precursor, injecting the reactant, and removing the physisorbed layer of the reactant. ALD can be a slow process, requiring a long time or numerous iterations to achieve a material layer of the desired thickness. To address this issue, linear ALD equipment is used to expedite the ALD process.

[0003] These linear atomic layer deposition devices have one or more source material nozzles and reaction gas nozzles for depositing an atomic layer on a substrate. Due to the characteristics of the source material nozzle and reaction gas nozzle extending in one direction, a difference in the amount of source material injected may occur in the extension direction of the source material nozzle, and a difference in the amount of reaction gas injected may occur in the extension direction of the reaction gas nozzle.

[0004] In addition, when the substrate passes under the source material nozzle and the reaction gas nozzle, it is exposed to the source material and the reaction gas, and the source material molecules deposited on the substrate react with the reaction gas molecules or the source material molecules are replaced by the reaction gas molecules to deposit a material layer on the substrate. However, there is also a problem that the excess source molecules or reaction gas molecules remaining after the material layer is deposited undergo a gas phase reaction inside the chamber, generating particles.

[0005] Therefore, a technology is required that can uniformly deposit a thin film over the entire substrate while reducing the generation of particles due to gas phase reactions inside the chamber by reducing the difference in the amount of source material injected in the extension direction of the source material nozzle and the difference in the amount of reaction gas injected in the extension direction of the reaction gas nozzle.

[0006] (Patent Document 1) Korean Patent Publication No. 10-2016-0120491

[0007] The present invention provides a deposition module capable of uniformly depositing a source material over an entire substrate while reducing particle generation due to a gas phase reaction, and a thin film deposition device including the same.

[0008] A deposition module according to one embodiment of the present invention includes a source material nozzle portion extending in a first direction and spraying a source material; and a source material distribution line distributing the source material in the first direction and supplying it to the source material nozzle portion; wherein the source material nozzle portion may include a source nozzle plate having an opening formed along the first direction; a source buffer portion providing a diffusion space for the source material distributed and supplied from the source material distribution line; and a source blocking plate having an area larger than the opening of the source nozzle plate and provided on the source nozzle plate in the diffusion space for the source material.

[0009] The source material nozzle unit may further include a first gap adjustment unit that adjusts the gap between the source nozzle plate and the source blocking plate according to the position of the opening of the source nozzle plate by at least partially moving the source blocking plate relative to the opening of the source nozzle plate.

[0010] The first gap adjusting member may include a plurality of elevating members arranged along the first direction to at least partially elevate the source blocking plate.

[0011] The above source blocking plate has flexibility and can be bent by individual elevation of the plurality of elevating members.

[0012] The above source blocking plate may be made of a metal material.

[0013] The above source blocking plate is made of aluminum (Al) and may have a thickness of 1 to 5 mm.

[0014] The method further comprises: a reaction gas nozzle unit arranged parallel to the source material nozzle unit in the first direction and injecting a reaction gas that reacts with the source material; and a reaction gas distribution line that distributes the reaction gas in the first direction and supplies it to the reaction gas nozzle unit; wherein the reaction gas nozzle unit may include a reaction nozzle plate having an opening formed along the first direction; a reaction gas buffer unit that provides a diffusion space for the reaction gas distributed and supplied from the reaction gas distribution line; and a reaction gas blocking plate that has a larger area than the opening of the reaction nozzle plate and is provided on the reaction nozzle plate in the diffusion space for the reaction gas.

[0015] The above reaction gas nozzle unit may further include a second gap adjustment unit that adjusts the gap between the reaction nozzle plate and the reaction gas blocking plate according to the position of the opening of the reaction nozzle plate by at least partially moving the reaction gas blocking plate with respect to the opening of the reaction nozzle plate.

[0016] The above reaction gas nozzle unit further includes a plasma forming unit for generating plasma, and can inject the reaction gas in the form of radicals using the plasma.

[0017] The above reaction gas nozzle section may further include a baffle provided within the reaction gas buffer section to separate the diffusion space of the reaction gas into a formation space of the plasma and a diffusion space of radicals, and having a plurality of distribution holes for providing a passage for the radicals of the reaction gas.

[0018] The device may further include a first source exhaust unit arranged around the periphery of the source material nozzle unit to surround the source material nozzle unit and exhaust residue of the source material in a direction different from the injection direction of the source material; and a first source purge unit arranged along the periphery of the source material nozzle unit so that the first source exhaust unit is positioned between the source material nozzle unit and injects a purge gas.

[0019] The first source exhaust unit may include a plurality of first side source exhaust units that are provided in parallel in the first direction symmetrically with respect to the source material nozzle unit; and a plurality of first end source exhaust units that are respectively provided at both ends of the source material nozzle unit in the first direction and extend in a direction at least partially intersecting with the first direction to connect the plurality of first side source exhaust units, and the first source purge unit may include a plurality of first side source purge units that are provided in parallel in the first direction symmetrically with respect to the source material nozzle unit; and a plurality of first end source purge units that are respectively provided corresponding to the plurality of first end source exhaust units and extend in a direction at least partially intersecting with the first direction to connect the plurality of first side source purge units.

[0020] The device may further include a second source exhaust unit arranged along the circumference of the source material nozzle unit such that the first source purge unit is positioned between the first source exhaust unit and exhausts surrounding residual gas; and a second source purge unit arranged along the circumference of the source material nozzle unit such that the second source exhaust unit is positioned between the first source purge unit and injects purge gas.

[0021] The first source purge unit and the second source purge unit each include a plurality of injection holes arranged along the circumference of the source material nozzle unit, and each of the plurality of injection holes of the second source purge unit may be provided offset from the extension direction of a line connecting each of the plurality of injection holes of the first source purge unit with an opening of the source nozzle plate at the shortest distance.

[0022] The apparatus may further include a first reaction gas exhaust unit arranged around the periphery of the reaction gas nozzle unit to surround the reaction gas nozzle unit and exhaust residual gas of the reaction gas in a direction different from the injection direction of the reaction gas; and a first reaction gas purge unit arranged along the periphery of the reaction gas nozzle unit so that the first reaction gas exhaust unit is positioned between the reaction gas nozzle unit and injects purge gas.

[0023] The first reaction gas exhaust unit may include a plurality of first side reaction gas exhaust units that are provided in parallel in the first direction symmetrically with respect to the reaction gas nozzle unit as the center; and a plurality of first end reaction gas exhaust units that are respectively provided at both ends of the reaction gas nozzle unit in the first direction and extend at least partially in a direction intersecting the first direction to connect the plurality of first side reaction gas exhaust units, and the first reaction gas purge unit may include a plurality of first side reaction gas purge units that are provided in parallel in the first direction symmetrically with respect to the reaction gas nozzle unit as the center; and a plurality of first end reaction gas purge units that are respectively provided corresponding to the plurality of first end reaction gas exhaust units and extend at least partially in a direction intersecting the first direction to connect the plurality of first side reaction gas purge units.

[0024] The second reaction gas exhaust unit is arranged along the circumference of the reaction gas nozzle unit so that the first reaction gas purge unit is positioned between the first reaction gas exhaust unit and exhausts surrounding residual gas; and the second reaction gas purge unit is arranged along the circumference of the reaction gas nozzle unit so that the second reaction gas exhaust unit is positioned between the first reaction gas purge unit and injects purge gas.

[0025]

[0026] A thin film deposition apparatus according to another embodiment of the present invention may include a substrate support for supporting a substrate; a deposition module according to an embodiment of the present invention for depositing a thin film including the source material on the substrate; and a driving unit connected to the substrate support or the deposition module to move the substrate support or the deposition module in a second direction intersecting the first direction.

[0027] A deposition module according to an embodiment of the present invention distributes a source material in a first direction extending from a source material nozzle portion through a source material distribution line, supplies the source material to the source material nozzle portion, diffuses the source material in a diffusion space within a source buffer portion, and controls the flow of the source material to the opening of the source nozzle plate by a source blocking plate, thereby controlling the amount of the source material sprayed according to the position of the opening of the source nozzle plate, thereby solving the problem of the deposition thickness of the source material being different between the two ends and the center in the first direction, thereby allowing the source material to be uniformly deposited on the entire substrate.

[0028] At this time, the first gap adjustment unit can be used to at least partially move the source blocking plate relative to the opening of the source nozzle plate, thereby adjusting the gap between the source nozzle plate and the source blocking plate according to the position of the opening of the source nozzle plate, and the source blocking plate having flexibility can be bent by individual elevation of a plurality of elevating members arranged along the first direction, thereby adjusting the gap between the source nozzle plate and the source blocking plate according to the position of the opening of the source nozzle plate, and accordingly, the amount of the source material can be adjusted according to the position of the opening of the source nozzle plate.

[0029] And when the deposition module includes a reaction gas nozzle unit, the first source exhaust unit including a plurality of first end source exhaust units as well as a plurality of first side source exhaust units, the first source purge unit including a plurality of first end source purge units as well as a plurality of first side source purge units, the first reaction gas exhaust unit including a plurality of first end reaction gas exhaust units as well as a plurality of first side reaction gas exhaust units, and the first reaction gas purge unit including a plurality of first end reaction gas purge units as well as a plurality of first side reaction gas purge units can prevent the source material and the reaction gas from meeting at the upper portion of the substrate, and can prevent the source material and the reaction gas from meeting at the first outer side of the deposition module, thereby reducing particles generated by a vapor phase reaction of the source material and the reaction gas.

[0030] In addition, by further providing a second source exhaust section and a second source purge section around the first source purge section, and further providing a second reaction gas exhaust section and a second reaction gas purge section around the first reaction gas purge section, it is possible to more effectively prevent the source material and the reaction gas from meeting at the periphery of the deposition module, and to fundamentally block particles generated by the gas phase reaction of the source material and the reaction gas.

[0031] FIG. 1 is a drawing showing a deposition module according to one embodiment of the present invention.

[0032] FIG. 2 is a drawing showing a modified example of a source material nozzle unit according to one embodiment of the present invention.

[0033] FIG. 3 is a drawing showing a source submodule and a reaction gas submodule according to one embodiment of the present invention.

[0034] Fig. 4 is a drawing showing a thin film deposition device according to another embodiment of the present invention.

[0035] Hereinafter, embodiments of the present invention will be described in more detail with reference to the attached drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms. These embodiments are provided only to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention. In the description, identical reference numerals are assigned to identical components, and the drawings may be partially exaggerated in size to accurately describe the embodiments of the present invention, and identical numerals in the drawings indicate identical elements.

[0036]

[0037] FIG. 1 is a drawing showing a deposition module according to one embodiment of the present invention.

[0038] Referring to FIG. 1, a deposition module (100) according to one embodiment of the present invention may include a source material nozzle unit (110) extending in a first direction (11) and spraying a source material; and a source material distribution line (120) distributing the source material in the first direction (11) and supplying it to the source material nozzle unit (110).

[0039] The source material nozzle unit (110) can extend in a first direction (11) and spray the source material onto the substrate (10). For example, the deposition module (100) including the source material nozzle unit (110) can be a linear deposition device, the first direction (11) can be a direction crossing the substrate (10), and the source material nozzle unit (110) can scan the substrate (10) to supply (or spray) the source material onto the substrate (10).

[0040] The source material distribution line (120) can distribute the source material in the first direction (11) and supply it to the source material nozzle unit (110), and can also distribute the source material from one supply location to multiple locations within the source material nozzle unit (110) (e.g., a diffusion space of the source material), or can group a predetermined number of locations within the source material nozzle unit (110) and supply the source material from each group to multiple supply locations. For example, as shown in FIG. 1, in order to spread the source material supplied from a single (or one) supply location over a large-area substrate (10), the source material can be supplied to multiple locations within the source material nozzle unit (110) by dividing it into two or more paths.

[0041] At this time, when a plurality of locations within the source material nozzle unit (110) are located within a single space (e.g., a diffusion space of the source material), a pressure difference (or gas pressure difference) may occur between a plurality of locations within the source material nozzle unit (110) where the source material is directly supplied and another location where the source material is indirectly diffused and delivered, and as a result, the amount of the source material sprayed varies depending on the pressure difference (e.g., injection pressure difference) for each location (or each part) within the single space within the source material nozzle unit (110), and it becomes difficult to spray the source material uniformly throughout the entire area (or all locations) of the source material nozzle unit (110).

[0042] Here, the source material nozzle unit (110) may include a source nozzle plate (111) having an opening formed along a first direction (11); a source buffer unit (112) providing a diffusion space (112a) for the source material distributed and supplied from a source material distribution line (120); and a source blocking plate (113) having a larger area than the opening of the source nozzle plate (111) and provided on the source nozzle plate (111) in the diffusion space (112a) of the source material. The source nozzle plate (111) may extend in the first direction (11), may have an opening formed along the first direction (11), and may spray the source material through the opening. For example, the opening of the source nozzle plate (111) may be configured as a plurality of spray holes (111a) or slits arranged (or formed) along the first direction (11).

[0043] The source buffer unit (112) can provide a diffusion space (112a) for the source material supplied by being distributed from the source material distribution line (120), and the source material supplied by being distributed from the source material distribution line (120) can be evenly diffused in the first direction (11) in the diffusion space (112a) of the source material, and after being diffused in the diffusion space (112a) of the source material, can be sprayed into the opening of the source nozzle plate (111). For example, the source buffer unit (112) can be configured as a housing having an internal space, and can form the diffusion space (112a) of the source material therein together with the source nozzle plate (111).

[0044] The source blocking plate (113) may have an area larger than the opening of the source nozzle plate (111), may be provided within the source buffer section (112), may be provided on the source nozzle plate (111) in the diffusion space (112a) of the source material, and may at least partially block the flow of the source material to the opening of the source nozzle plate (111). Here, the area may be a horizontal area or a horizontal cross-sectional area. By controlling the flow of the source material to the opening of the source nozzle plate (111) through the source blocking plate (113), the source material may be evenly sprayed throughout the entire opening of the source nozzle plate (111) without any difference in the spray amount (or supply amount) depending on the position of the opening of the source nozzle plate (111).

[0045] Accordingly, the deposition module (100) according to the present invention distributes the source material in the first direction (11) in which the source material nozzle unit (110) extends through the source material distribution line (120) and supplies the source material to the source material nozzle unit (110), while diffusing the source material in the diffusion space (112a) in the source buffer unit (112) and controlling the flow of the source material to the opening of the source nozzle plate (111) by the source blocking plate (113), thereby controlling the injection amount (or supply amount) of the source material according to the position of the opening of the source nozzle plate (111). Accordingly, when the source material is deposited on the substrate (10) by the deposition module (100), the problem of the deposition thickness of the source material being different between the ends and the center of the substrate (10) in the first direction (11) can be solved, so that the source material can be uniformly deposited on the entire substrate (10).

[0046] The source material nozzle unit (110) may further include a first gap adjustment unit that adjusts the gap between the source nozzle plate (111) and the source blocking plate (113) according to the position of the opening of the source nozzle plate (111) by at least partially moving the source blocking plate (113) with respect to the opening of the source nozzle plate (111). The first gap adjustment unit may adjust the gap between the source nozzle plate (111) and the source blocking plate (113) according to the position of the opening of the source nozzle plate (111) by at least partially moving the source blocking plate (113) with respect to the opening of the source nozzle plate (111), thereby controlling (or adjusting) the injection amount of the source material according to the position of the opening of the source nozzle plate (111).

[0047] For example, the deposition module (100) of the present invention may further include a source injection amount measuring unit (not shown) that measures the injection amount of the source material at each position of the opening of the source nozzle plate (111), and according to the measurement of the source injection amount measuring unit (not shown), in a position where the injection amount of the source material is (relatively) small, the gap between the source nozzle plate (111) and the source blocking plate (113) can be increased, and in a position where the injection amount of the source material is (relatively) large, the gap between the source nozzle plate (111) and the source blocking plate (113) can be reduced. In addition, the gap between the source nozzle plate (111) and the source blocking plate (113) may be made (relatively) narrow at locations corresponding to a plurality of locations within the source material nozzle unit (110) where the source material is directly supplied without measurement by the source injection amount measuring unit (not shown) so that the source material does not diffuse and quickly escape through the opening of the source nozzle plate (111), and the gap between the source nozzle plate (111) and the source blocking plate (113) may be made (relatively) wide at other locations where the source material is indirectly diffused and delivered so that the source material can be well diffused and delivered.

[0048] Here, the first gap adjusting unit may include a plurality of elevating members (114) arranged along the first direction (11) to at least partially elevate the source blocking plate (113). The plurality of elevating members (114) may be arranged along the first direction (11), may be respectively connected to the source blocking plate (113), and may be connected (or linked) to different positions of the source blocking plate (113). At this time, the plurality of elevating members (114) may be supported (or fixed) to the source nozzle plate (111), etc., and may be supported on a portion of a periphery (or edge) of an opening of the source nozzle plate (111). Through this, each of the plurality of lifting members (114) can raise and lower a linked (or connected) part (or position) of the source blocking plate (113), and accordingly, each lifting member (114) can (independently) raise and lower a different position of the linked source blocking plate (113), and according to the raising and lowering by each lifting member (114), each part (or position) of the source blocking plate (113) can be individually (or independently) moved (or raised) with respect to the opening of the source nozzle plate (111), so that the gap between the source nozzle plate (111) and the source blocking plate (113) can be adjusted according to the position of the opening of the source nozzle plate (111). Meanwhile, the plurality of lifting members (114) may be supported (or fixed) to the upper or lower portion (or other configuration) of the source material nozzle portion (110) by a cable, a rod, or a shaft, and in this case, the connecting portion, such as the cable, rod, or shaft, may penetrate the wall portion (or housing wall) of the source buffer portion (112), and the gas pressure (e.g., vacuum) of the source material diffusion space (112a) may be maintained by a sealing portion, such as a vacuum feed-through or bellows, so as to prevent leakage (or outflow) of the source material from the source material diffusion space (112a).

[0049] For example, the plurality of lifting members (114) may be configured with at least one selected from an actuator such as a piezo actuator using a (piezo) cable, a cylinder using a rod (shaft), a motor using a (connecting) shaft, etc. In addition, the number and arrangement positions of the plurality of lifting members (114) may be appropriately determined according to at least one of the size of the opening of the source blocking plate (113) and / or the source nozzle plate (111), and the number of multiple positions within the source material nozzle unit (110) distributed through the source material distribution line (120), and the plurality of lifting members (114) may be arranged to correspond to at least the multiple positions within the source material nozzle unit (110).

[0050] At this time, the source blocking plate (113) may have flexibility and may be bent by individual elevation of a plurality of lifting members (114). The source blocking plate (113) has flexibility and may be bent by a bending force (or a bending force), and each part of the source blocking plate (113) may be independently (or individually) elevated as each lifting member (114) individually ascends (or ascends), and accordingly, when the elevation heights of each lifting member (114) are different, the source blocking plate (113) may be bent (or bent). In this case, a buffer area (or space) that buffers the gas pressure between (adjacent) positions of the opening of the source nozzle plate (111) without the gap between the source nozzle plate (111) and the source blocking plate (113) rapidly changing at each position of the opening of the source nozzle plate (111) (or between adjacent positions) can be formed, so that a uniform gas pressure (or injection pressure) can be formed over the entire opening of the source nozzle plate (111), and accordingly, the source material can be injected uniformly (or in a uniform injection amount) over the entire opening of the source nozzle plate (111).

[0051] Meanwhile, the source blocking plate (113) may be configured as a plurality of subplates arranged along the first direction (11) so that each of the plurality of lifting members (114) provided to each of the plurality of subplates may lift each of the subplates, but in this case, the difference in the gap between the adjacent subplates and the source nozzle plate (111) may become sharp, and the buffer area may not be formed between the adjacent subplates, and accordingly, it is difficult to form a uniform gas pressure throughout the opening of the source nozzle plate (111), and the uniformity of the injection amount of the source material for each position of the opening of the source nozzle plate (111) may be reduced.

[0052] And the source blocking plate (113) can be made of a metal material, and can have flexibility due to its abundant properties of stretching and expanding, and can have strength such as flexural strength that does not break or snap easily. When the source blocking plate (113) is made of a metal material, it can have flexibility due to toughness (as opposed to brittleness), so that the source blocking plate (113) can be bent, and can have sufficient strength so that the source blocking plate (113) does not break or snap when bent. In addition, the metal material may not have an effect on and / or react with the source material, so there may be no damage to the source blocking plate (113), such as corrosion caused by the source material, and the source material may not be affected, and the generation of contaminants (or byproducts) such as particles may be prevented. Moreover, since metal materials can be resistant to heat (compared to resin materials that are generally flexible due to their ductility), the source blocking plate (113) can be used in high-temperature processes such as atomic layer deposition (ALD) processes.

[0053] For example, the source blocking plate (113) may be made of aluminum (Al) and may have a thickness of 1 to 5 mm. When the source blocking plate (113) is made of aluminum (Al), it may have excellent flexibility and may not be affected by plasma, so that plasma may be applied to the source material nozzle unit (110) and the source material activated by the plasma may be sprayed. At this time, the source blocking plate (113) may have a thickness of 1 to 5 mm, and may have sufficient strength so that it does not easily break or snap even when the source blocking plate (113) is bent countless times (or multiple times), and may have excellent flexibility so that it can be easily bent even with a small force.

[0054] If the source blocking plate (113) becomes thinner than 1 mm, the source blocking plate (113) may not have sufficient strength and may easily break or snap without being bent several times. On the other hand, if the source blocking plate (113) becomes thicker than 5 mm, the flexibility decreases and it may not be easily bent, requiring a large force to bend it, or the source blocking plate (113) may not be bent with only the lifting force of each of the plurality of lifting members (114).

[0055] Accordingly, by at least partially moving the source blocking plate (113) with respect to the opening of the source nozzle plate (111) through the first gap adjusting unit, the gap between the source nozzle plate (111) and the source blocking plate (113) can be adjusted according to the position of the opening of the source nozzle plate (111), and the gap between the source nozzle plate (111) and the source blocking plate (113) can be adjusted according to the position of the opening of the source nozzle plate (111) by bending the flexible source blocking plate (113) by individual elevation of each of the plurality of elevating members (114) arranged along the first direction (11), and accordingly, the amount of the source material can be adjusted according to the position of the opening of the source nozzle plate (111), and the source material can be uniformly ejected throughout the opening of the source nozzle plate (111).

[0056] FIG. 2 is a drawing showing a modified example of a source material nozzle unit according to one embodiment of the present invention. FIG. 2 (a) shows a state in which a source blocking plate closes an opening of a source nozzle plate, and FIG. 2 (b) shows a state in which a source blocking plate opens an opening of a source nozzle plate.

[0057] Referring to FIG. 2, the source blocking plate (113) can block (or close) the opening of the source nozzle plate (111) as shown in (a) of FIG. 2 to diffuse the source material in the diffusion space (112a) within the source buffer section (112), thereby preventing the source material from being sprayed into the opening of the source nozzle plate (111) and filling the diffusion space (112a) of the source material. And, the source blocking plate (113) can release the blocking of the opening of the source nozzle plate (111) (or open the opening of the source nozzle plate) after the source material is (fully) filled in the diffusion space (112a) of the source material so that the source material can be sprayed through the opening of the source nozzle plate (111), and, as shown in (b) of FIG. 2, by raising and lowering the source blocking plate (113) and separating it from the source nozzle plate (111), the source material can be simultaneously sprayed (or sprayed) at each position of the opening of the source nozzle plate (111) through the gap (or space) between the source blocking plate (113) and the source nozzle plate (111). At this time, the source blocking plate (113) may not have flexibility, and after the source material is filled in the diffusion space (112a) of the source material, the source material is simultaneously and multiple times ejected from each position of the opening of the source nozzle plate (111), so that the source material can be uniformly sprayed throughout the opening of the source nozzle plate (111).

[0058] Meanwhile, one or more through holes may be formed in the source blocking plate (113), and the path (or passage) of the source material may be provided not only through the gap between the source blocking plate (113) and the source nozzle plate (111) but also through the through holes, thereby enabling more precise control of the flow of the source material, and thereby further improving the uniformity of the spray amount of the source material at each position of the opening of the source nozzle plate (111). At this time, the source material nozzle unit (110) may further include an opening / closing means (not shown) for the through hole so that the source material is not sprayed through the opening of the source nozzle plate (111) but has a process (time) in which the source material is filled in the diffusion space (112a), and as the opening / closing means (not shown), an auxiliary plate (not shown) having one or more openings formed therein may be provided on the source blocking plate (113) so as to be movable in parallel with the source blocking plate (113), so that when the opening and the through hole are connected according to the movement of the auxiliary plate (not shown), the source material is sprayed (or passes) through the through hole, and when the opening and the through hole are not connected, the source material is prevented from passing (or sprayed) through the through hole. In addition, the communication area (e.g., horizontal cross-sectional area) of the opening and the through hole can be adjusted according to the movement of the auxiliary plate (not shown), and accordingly, the amount of the source material ejected (or passed through) through the through hole can be adjusted.

[0059] FIG. 3 is a drawing showing a source sub-module and a reaction gas sub-module according to an embodiment of the present invention. FIG. 3 (a) shows an embodiment of the source sub-module, and FIG. 3 (b) shows an embodiment of the reaction gas sub-module.

[0060] Referring to FIG. 3, the deposition module (100) according to the present invention may further include a source material nozzle unit (110) and a reaction gas nozzle unit (130) arranged parallel to each other in the first direction and injecting a reaction gas that reacts with the source material; and a reaction gas distribution line (not shown) that distributes the reaction gas in the first direction (11) and supplies it to the reaction gas nozzle unit (130).

[0061] The reaction gas nozzle unit (130) can extend in the first direction (11), be arranged parallel to the source material nozzle unit (110) in the first direction, and can inject a reaction gas that reacts with the source material onto the substrate (10). For example, the reaction gas nozzle unit (130) can scan the substrate (10) to supply (or inject) the reaction gas onto the substrate (10), and its configuration can be similar to or (almost) identical to the source material nozzle unit (110) except that the material (or gas) to be injected is different.

[0062] The reaction gas distribution line (not shown) can distribute the reaction gas in the first direction (11) and supply it to the reaction gas nozzle unit (130), and can also distribute the reaction gas from one supply location to multiple locations within the reaction gas nozzle unit (130) (for example, a diffusion space of the reaction gas), or can group a plurality of locations within the reaction gas nozzle unit (130) by a predetermined number and supply the reaction gas from multiple supply locations for each group. For example, the reaction gas distribution line (not shown) can be similar in configuration to the source material distribution line (120) except for the material supplied, or can be (almost) identical, and can be configured like the source material distribution line (120) of FIG. 1.

[0063] Here, the reaction gas nozzle unit (130) may include a reaction nozzle plate (131) having an opening (131a) formed along a first direction (11); a reaction gas buffer unit (not shown) providing a diffusion space for the reaction gas distributed and supplied from a reaction gas distribution line (not shown); and a reaction gas blocking plate (not shown) having a larger area than the opening (131a) of the reaction nozzle plate (131) and provided on the reaction nozzle plate (131) in the diffusion space for the reaction gas. The reaction nozzle plate (131) may extend in the first direction (11), may have an opening (131a) formed along the first direction (11), and may inject the reaction gas through the opening (131a). Here, the opening (131a) of the reaction nozzle plate (131) may be configured as a slit or a plurality of injection holes formed (or arranged) along the first direction (11). For example, the reaction nozzle plate (131) may be similar to, (almost) identical to, or substantially identical to, the source nozzle plate (111).

[0064] The reaction gas buffer unit (not shown) can provide a diffusion space for the reaction gas distributed and supplied from the reaction gas distribution line (not shown), and the reaction gas distributed and supplied from the reaction gas distribution line (not shown) can be evenly diffused in the first direction (11) in the diffusion space of the reaction gas, and after being diffused in the diffusion space of the reaction gas, can be injected into the opening (131a) of the reaction nozzle plate (131). For example, the reaction gas buffer unit (not shown) can be configured as a housing having an internal space, and can form a diffusion space for the reaction gas therein together with the reaction nozzle plate (131). Here, the reaction gas buffer unit (not shown) can be similar to, (almost) identical to, or substantially the same as the source buffer unit (112).

[0065] A reaction gas blocking plate (not shown) may have a larger area than the opening (131a) of the reaction nozzle plate (131), may be provided within the reaction gas buffer section (not shown), may be provided on the reaction nozzle plate (131) in the diffusion space of the reaction gas, and may at least partially block the flow of the reaction gas to the opening (131a) of the reaction nozzle plate (131). By controlling the flow of the reaction gas to the opening (131a) of the reaction nozzle plate (131) through the reaction gas blocking plate (not shown), the reaction gas can be evenly sprayed to the entire (or overall) opening (131a) of the reaction nozzle plate (131) without any difference in the spray amount (or supply amount) depending on the position of the opening (131a) of the reaction nozzle plate (131). For example, the above reaction gas blocking plate (not shown) may be similar to, (almost) identical to, or substantially identical to, the source blocking plate (113) in terms of material (or materials), thickness, characteristics (or properties), etc.

[0066] In addition, the reaction gas nozzle unit (130) may further include a second gap adjustment unit (not shown) that moves the reaction gas blocking plate (not shown) at least partially relative to the opening (131a) of the reaction nozzle plate (131) to adjust the gap between the reaction nozzle plate (131) and the reaction gas blocking plate (not shown) according to the position of the opening (131a) of the reaction nozzle plate (131). The second gap adjusting unit (not shown) can adjust the gap between the reaction nozzle plate (131) and the reaction gas blocking plate (not shown) according to the position of the opening (131a) of the reaction nozzle plate (131) by at least partially moving the reaction gas blocking plate (not shown) with respect to the opening (131a) of the reaction nozzle plate (131), and accordingly, the injection amount of the reaction gas can be controlled (or adjusted) according to the position of the opening (131a) of the reaction nozzle plate (131). For example, the second gap adjusting unit (not shown) may be similar to, (almost) identical to, or substantially identical to, the first gap adjusting unit, and may include a plurality of elevating members (not shown) arranged along the first direction (11) to elevate the reaction gas blocking plate (not shown) at least partially.

[0067] And the reaction gas nozzle unit (130) may further include a plasma forming unit (not shown) for generating plasma, and may inject the reaction gas in the form of radicals using the plasma. The plasma forming unit (not shown) may be provided inside the reaction gas nozzle unit (130) (for example, inside the reaction gas buffer unit or the diffusion space of the reaction gas), or may be provided outside the reaction gas nozzle unit (130). When provided inside the reaction gas nozzle unit (130), plasma may be formed inside the reaction gas nozzle unit (130) using electrodes that face each other. Here, direct current (DC) power or alternating current (AC) power (for example, RF) power may be applied to the electrodes, and plasma may be formed due to a voltage difference between the anodes caused by the application of the power.

[0068] When the reaction gas is supplied in the form of radicals using the plasma formed in the plasma forming unit (not shown), the reaction gas is activated, so the reactivity with the source material can be improved, and a thin film can be stably deposited by the chemical reaction between the source material and the reaction gas.

[0069] At this time, the reaction gas nozzle unit (130) is provided within the reaction gas buffer unit (not shown) to separate the diffusion space of the reaction gas into the formation space of the plasma and the diffusion space of radicals, and may further include a baffle (not shown) having a plurality of distribution holes for providing a passage for the radicals of the reaction gas. The baffle (not shown) may be provided within the reaction gas buffer unit (not shown) (for example, the diffusion space of the reaction gas), and may separate the diffusion space of the reaction gas into the formation space of the plasma and the diffusion space of radicals, and may have a plurality of distribution holes to provide a passage for the radicals of the reaction gas. For example, the baffle (not shown) may be provided on the reaction gas blocking plate (not shown), and may provide (or form) the formation space of the plasma at an upper portion of the baffle (not shown), and may form (or provide) the diffusion space of the radicals at a lower portion of the baffle (not shown). Here, the baffle (not shown) may be grounded (GND) or may be subjected to voltage, and may form the plasma due to a voltage difference with respect to the wall (or housing wall) of the reaction gas buffer section (not shown), and may filter out charged ions and electrons in the plasma to allow only the neutral radicals (or reactive species) to pass through the plurality of distribution holes.

[0070] In this case, the reaction gas blocking plate (not shown) may be made of aluminum (Al) and may not affect the formation of the plasma. If the reaction gas blocking plate (not shown) is made of stainless steel (Stainless Use Steel; SUS), a voltage difference may be generated in the reaction gas blocking plate (not shown), which may affect the formation of the plasma, and the formation of the plasma may not be easy. However, if the reaction gas blocking plate (not shown) is made of aluminum (Al), this problem can be solved. Meanwhile, since the radicals of the reaction gas are supplied (or provided) to the opening (131a) of the reaction nozzle plate (131) by being (evenly) distributed through the plurality of distribution holes formed in the baffle (not shown), the opening (131a) of the reaction nozzle plate (131) may be formed in a slit shape.

[0071] The deposition module (100) according to the present invention may further include a first source exhaust unit (141) arranged around the source material nozzle unit (110) to surround the source material nozzle unit (110) and exhaust residue of the source material in a direction different from the injection direction of the source material; and a first source purge unit (142) arranged along the periphery of the source material nozzle unit (110) so that the first source exhaust unit (141) is positioned between the source material nozzle unit (110) and inject a purge gas.

[0072] The first source exhaust unit (141) may be arranged around the source material nozzle unit (110) to surround the source material nozzle unit (110), and may exhaust the residue of the source material in a direction different from the spraying direction of the source material (for example, in a direction opposite to the spraying direction or in an upward direction). For example, the first source exhaust unit (141) may include a slit or a plurality of exhaust holes formed (or arranged) along the periphery of the source material nozzle unit (110), and the source material may be sprayed onto the substrate (10) through the slit or the plurality of exhaust holes, and the residue of the source material that is physically adsorbed on the substrate (10) and remains thereon may be exhausted in a direction different from the spraying direction of the source material.

[0073] The first source purge unit (142) can be arranged along the circumference of the source material nozzle unit (110) so that the first source exhaust unit (141) is positioned between the source material nozzle unit (110), and can surround the first source exhaust unit (141) together with the source material nozzle unit (110), and can inject purge gas in a direction intersecting the surface of the substrate (10). For example, the first source purge unit (142) can form an air curtain by spraying the purge gas in a direction perpendicular to the surface of the substrate (10) (for example, downward direction), and can suppress or prevent (or block) the source material sprayed from the source material nozzle unit (110) from diffusing to the outside of the source material nozzle unit (110) and / or the first source exhaust unit (141), and can also induce (residues of) the source material to be exhausted (or discharged) to the first source exhaust unit (141).

[0074] And the deposition module (100) according to the present invention may further include a first reaction gas exhaust unit (145) arranged around the reaction gas nozzle unit (130) to surround the reaction gas nozzle unit (130) and exhaust residual gas of the reaction gas in a direction different from the injection direction of the reaction gas; and a first reaction gas purge unit (146) arranged along the periphery of the reaction gas nozzle unit (130) so that the first reaction gas exhaust unit (145) is positioned between the reaction gas nozzle unit (130) and inject a purge gas.

[0075] The first reaction gas exhaust unit (145) may be arranged around the reaction gas nozzle unit (130) so as to surround the reaction gas nozzle unit (130), and may exhaust residual gas of the reaction gas in a direction different from the injection direction of the reaction gas (for example, in a direction opposite to the injection direction or in an upward direction). For example, the first reaction gas exhaust unit (145) may include a slit or a plurality of exhaust holes formed (or arranged) along the periphery of the reaction gas nozzle unit (130), and the reaction gas may be injected onto the substrate (10) through the slit or the plurality of exhaust holes, and the residual gas of the reaction gas that remains after the reaction gas is physically adsorbed on the substrate (10) (or reacts with the source material physically adsorbed on the substrate) may be exhausted in a direction different from the injection direction of the reaction gas.

[0076] The first reaction gas purge unit (146) can be arranged along the periphery of the reaction gas nozzle unit (130) so that the first reaction gas exhaust unit (145) is positioned between the reaction gas nozzle unit (130), and can surround the first reaction gas exhaust unit (145) together with the reaction gas nozzle unit (130), and can inject purge gas in a direction intersecting the surface of the substrate (10). For example, the first reaction gas purge unit (146) can form an air curtain by spraying the purge gas in a direction perpendicular to the surface of the substrate (10) (e.g., downward direction), and can suppress or prevent (or block) the reaction gas sprayed from the reaction gas nozzle unit (130) from diffusing to the outside of the reaction gas nozzle unit (130) and / or the first reaction gas exhaust unit (145), and can also guide the reaction gas (residual gas thereof) to be exhausted to the first reaction gas exhaust unit (145).

[0077] Here, the first source exhaust unit (141) may include a plurality of first side source exhaust units (141a) that are provided in parallel in a first direction (11) symmetrically with respect to the source material nozzle unit (110); and a plurality of first end source exhaust units (141b) that are provided at each of the first direction (11) ends of the source material nozzle unit (110) and extend in a direction at least partially intersecting the first direction (11) to connect the plurality of first side source exhaust units (141a). The plurality of first side source exhaust units (141a) may be provided in parallel in the first direction (11) symmetrically with respect to the source material nozzle unit (110). If the plurality of first side source exhaust portions (141a) are not formed symmetrically with respect to the source material nozzle portion (110), the flow of the source material may vary depending on the position of the source material nozzle portion (110) depending on the distance from the source material nozzle portion (110) and / or the length of the slit or the number of the plurality of exhaust holes, and thus the thickness of the adsorption (or atomic layer deposition) of the source material may vary depending on the position of the substrate (10), resulting in an uneven atomic layer thickness of the source material. Accordingly, by forming the plurality of first side source exhaust portions (141a) symmetrically with respect to the source material nozzle portion (110) and making the lengths of the plurality of first side source exhaust portions (141a) in the first direction (11) the same, the atomic layer of the source material may be uniformly deposited on the entire substrate (10).

[0078] A plurality of first end source exhaust portions (141b) can be provided at each of the first direction (11)-side ends of the source material nozzle portion (110), and can extend in a direction at least partially intersecting the first direction (11) to connect the plurality of first side source exhaust portions (141a), through which the plurality of first side source exhaust portions (141a) and the plurality of first end source exhaust portions (141b) can form a closed loop, and the first source exhaust portion (141) can completely surround the source material nozzle portion (110) including the first direction (11)-side ends of the source material nozzle portion (110). Accordingly, it is possible to effectively suppress or prevent the source material from diffusing to the outside of the source material nozzle unit (110), and not only the source material from diffusing to the side outside of the source material nozzle unit (110), but also the source material from diffusing to the outside of both ends of the source material nozzle unit (110) in the first direction (11). For example, the plurality of first end source exhaust units (141b) may connect the plurality of first side source exhaust units (141a) in a semicircle shape as shown in (a) of FIG. 3, or may connect the plurality of first side source exhaust units (141a) in a straight line shape extending in a second direction (12) intersecting the first direction (11) as shown in (b) of FIG. 3, and the present invention is not particularly limited thereto, and it is sufficient as long as it can connect the plurality of first side source exhaust units (141a) by extending at least partially in a direction intersecting the first direction (11). Meanwhile, the (connection) shape of the plurality of first end source exhaust parts (141b) may be determined according to the outer shape of both ends in the first direction (11) of the source nozzle plate (111) and / or the opening of the source nozzle plate (111).

[0079] And the first source purge unit (142) may include a plurality of first side source purge units (142a) that are provided in parallel in a first direction (11) symmetrically with respect to the source material nozzle unit (110); and a plurality of first end source purge units (142b) that are respectively provided corresponding to the plurality of first end source exhaust units (141b) and extend in a direction at least partially intersecting the first direction (11) to connect the plurality of first side source purge units (142a). The plurality of first side source purge units (142a) may be provided in parallel in the first direction (11) symmetrically with respect to the source material nozzle unit (110) such that the plurality of first side source exhaust units (141a) are respectively positioned between the source material nozzle unit (110). If the plurality of first side source purge units (142a) are not formed symmetrically with respect to the source material nozzle unit (110), the flow of the source material varies depending on the number of the plurality of injection holes (142c) that inject the purge gas at the corresponding position and the distance from the injection holes (142c), so that the adsorption thickness of the source material varies depending on the position of the substrate (10), and the atomic layer thickness of the source material may become non-uniform. Accordingly, the plurality of first side source purge units (142a) are also formed symmetrically with respect to the source material nozzle unit (110), and the lengths of the plurality of first side source purge units (142a) in the first direction (11) are made the same, so that the atomic layer of the source material can be uniformly deposited on the entire substrate (10).

[0080] A plurality of first end source purge units (142b) may be provided corresponding to a plurality of first end source exhaust units (141b), and may extend in a direction at least partially intersecting with the first direction (11) to connect a plurality of first side source purge units (142a), through which the plurality of first side source purge units (142a) and the plurality of first end source purge units (142b) may form a closed loop, and the first source purge unit (142) may completely surround the first source exhaust unit (141) together with the source material nozzle unit (110) including both ends of the first direction (11) of the first source exhaust unit (141). Accordingly, it is possible to effectively suppress or prevent the source material from diffusing to the outside of the first source exhaust unit (141), and not only the source material from diffusing to the outside of the plurality of first side source purge units (142a), but also the source material from diffusing to the outside of the plurality of first end source exhaust units (141b). For example, the plurality of first end source purge units (142b) may connect the plurality of first side source purge units (142a) in a semicircular shape as shown in (a) of FIG. 3, or may connect the plurality of first side source purge units (142a) in a straight line extending in the second direction (12) as shown in (b) of FIG. 3, and the present invention is not particularly limited thereto, and it is sufficient if it can connect the plurality of first side source purge units (142a) by extending in a direction at least partially intersecting the first direction (11). Meanwhile, the (connection) form of the plurality of first end source purge units (142b) may be determined according to the (connection) form of the plurality of first end source exhaust units (141b).

[0081] In addition, the first reaction gas exhaust unit (145) may include a plurality of first side reaction gas exhaust units (145a) that are provided in parallel in the first direction (11) symmetrically with respect to the reaction gas nozzle unit (130); and a plurality of first end reaction gas exhaust units (145b) that are provided at each of the first direction (11) ends of the reaction gas nozzle unit (130) and extend in a direction at least partially intersecting the first direction (11) to connect the plurality of first side reaction gas exhaust units (145a). The plurality of first side reaction gas exhaust units (145a) may be provided in parallel in the first direction (11) symmetrically with respect to the reaction gas nozzle unit (130). If the plurality of first side reaction gas exhaust parts (145a) are not formed symmetrically with respect to the reaction gas nozzle part (130), the flow of the reaction gas may vary depending on the position of the reaction gas nozzle part (130) depending on the distance from the reaction gas nozzle part (130) and / or the length of the slit or the number of the plurality of exhaust holes, and thus the thickness of the adsorption (or atomic layer deposition) of the reaction gas may vary depending on the position of the substrate (10), resulting in an uneven thickness of the atomic layer of the reaction gas. Accordingly, by forming the plurality of first side reaction gas exhaust parts (145a) symmetrically with respect to the reaction gas nozzle part (130) and making the length of the first direction (11) of the plurality of first side reaction gas exhaust parts (145a) the same, the atomic layer of the reaction gas may be uniformly deposited on the entire substrate (10).

[0082] A plurality of first end reaction gas exhaust portions (145b) can be provided at each of the first direction (11) end portions of the reaction gas nozzle portion (130), and can extend in a direction at least partially intersecting the first direction (11) to connect the plurality of first side reaction gas exhaust portions (145a), through which the plurality of first side reaction gas exhaust portions (145a) and the plurality of first end reaction gas exhaust portions (145b) can form a closed loop, and the first reaction gas exhaust portion (145) can completely surround the reaction gas nozzle portion (130) including the first direction (11) end portions of the reaction gas nozzle portion (130). Accordingly, it is possible to effectively suppress or prevent the reaction gas from diffusing to the outside of the reaction gas nozzle unit (130), and not only the reaction gas from diffusing to the side outside of the reaction gas nozzle unit (130), but also the reaction gas from diffusing to the outside of both ends of the reaction gas nozzle unit (130) in the first direction (11). For example, the plurality of first end reaction gas exhaust units (145b) may connect the plurality of first side reaction gas exhaust units (145a) in a straight line extending in the second direction (12) as shown in (b) of FIG. 3, or may connect the plurality of first side reaction gas exhaust units (145a) in a semicircle as shown in (a) of FIG. 3, and the present invention is not particularly limited thereto, and it is sufficient as long as the plurality of first side reaction gas exhaust units (145a) can be connected by extending in a direction at least partially intersecting the first direction (11). Meanwhile, the (connection) shape of the plurality of first end reaction gas exhaust portions (145b) may be determined according to the outer shape of both ends in the first direction (11) of the reaction nozzle plate (131) and / or the opening (131a) of the reaction nozzle plate (131).

[0083] And the first reaction gas purge unit (146) may include a plurality of first side reaction gas purge units (146a) that are provided in parallel in a first direction (11) symmetrically with respect to the reaction gas nozzle unit (130); and a plurality of first end reaction gas purge units (146b) that are respectively provided corresponding to the plurality of first end reaction gas exhaust units (145b) and extend in a direction at least partially intersecting the first direction (11) to connect the plurality of first side reaction gas purge units (146a). The plurality of first side reaction gas purge units (146a) may be provided in parallel in the first direction (11) symmetrically with respect to the reaction gas nozzle unit (130) such that the plurality of first side reaction gas exhaust units (145a) are respectively positioned between the reaction gas nozzle unit (130). If the plurality of first side reaction gas purge units (146a) are not formed symmetrically with respect to the reaction gas nozzle unit (130), the flow of the reaction gas will vary depending on the number of the plurality of injection holes (146c) that inject the purge gas at the corresponding position and the distance from the injection holes (146c), and thus the adsorption thickness of the reaction gas will vary depending on the position of the substrate (10), and the atomic layer thickness of the reaction gas may become non-uniform. Accordingly, the plurality of first side reaction gas purge units (146a) are also formed symmetrically with respect to the reaction gas nozzle unit (130), and the lengths of the plurality of first side reaction gas purge units (146a) in the first direction (11) are made the same so that the atomic layer of the reaction gas can be uniformly deposited on the entire substrate (10).

[0084] A plurality of first end reaction gas purge units (146b) may be provided corresponding to a plurality of first end reaction gas exhaust units (145b), and may extend in a direction at least partially intersecting with the first direction (11) to connect a plurality of first side reaction gas purge units (146a), through which the plurality of first side reaction gas purge units (146a) and the plurality of first end reaction gas purge units (146b) may form a closed loop, and the first reaction gas purge unit (146) may completely surround the first reaction gas exhaust unit (145) together with the reaction gas nozzle unit (130) including both ends of the first direction (11) of the first reaction gas exhaust unit (145). Accordingly, it is possible to effectively suppress or prevent the reaction gas from diffusing to the outside of the first reaction gas exhaust portion (145), and not only the reaction gas from diffusing to the outside of the plurality of first side reaction gas exhaust portions (145a), but also the reaction gas from diffusing to the outside of the plurality of first end reaction gas exhaust portions (145b). For example, the plurality of first end reaction gas purge portions (146b) may connect the plurality of first side reaction gas purge portions (146a) in a straight line extending in the second direction (12), as shown in (b) of FIG. 3, or may connect the plurality of first side reaction gas purge portions (146a) in a semicircle, as shown in (a) of FIG. 3, and the present invention is not particularly limited thereto, and it is sufficient as long as it can connect the plurality of first side reaction gas purge portions (146a) by extending in a direction at least partially intersecting the first direction (11). Meanwhile, the (connection) shape of the plurality of first end reaction gas purge units (146b) may be determined according to the (connection) shape of the plurality of first end reaction gas exhaust units (145b).

[0085] Accordingly, the deposition module (100) according to the present invention, when including a reaction gas nozzle unit (130), prevents the source material and the reaction gas from meeting on the upper portion of the substrate (10) through the first source exhaust unit (141) including a plurality of first end source exhaust units (141b) as well as a plurality of first side source exhaust units (141a), the first source purge unit (142) including a plurality of first end source purge units (142b) as well as a plurality of first side source purge units (142a), the first reaction gas exhaust unit (145) including a plurality of first end reaction gas exhaust units (145b) as well as a plurality of first side reaction gas purge units (145a), and the first reaction gas purge unit (146) including a plurality of first end reaction gas purge units (146b) as well as a plurality of first side reaction gas purge units (146a). In addition, it is possible to prevent the source material and the reaction gas from meeting outside the first direction (11) of the deposition module (100), thereby reducing particles generated by the gas phase reaction of the source material and the reaction gas.

[0086] Here, the source material nozzle unit (110), the first source exhaust unit (141), and the first source purge unit (142) can form a source sub-module (150), and the reaction gas nozzle unit (130), the first reaction gas exhaust unit (145), and the first reaction gas purge unit (146) can form a reaction gas sub-module (160).

[0087] In the past, since both ends of the source material nozzle unit (110) in the first direction (11) and both ends of the reaction gas nozzle unit (130) in the first direction (11) were in contact with the outer surface of the substrate support (210) and / or the substrate (10), an exhaust unit and / or a purge unit were not provided (or arranged) at both ends of the source material nozzle unit (110) in the first direction (11) and at both ends of the reaction gas nozzle unit (130) in the first direction (11), and the source material (residue of the source material) and / or the reaction gas (residue of the source material) were directly exhausted through a pumping port (not shown) inside a chamber (230) provided at the outer surface of the substrate support (210) and / or the substrate (10) through both ends of the source material nozzle unit (110) in the first direction (11) and both ends of the reaction gas nozzle unit (130) in the first direction (11). However, in this case, the source material (residue of) and the reaction gas (residual gas of) diffuse to both ends of the source material nozzle unit (110) in the first direction (11) and both ends of the reaction gas nozzle unit (130) in the first direction (11) and react at the outer edge of the substrate support (210) and / or the substrate (10), thereby generating particles, and there was a problem that these particles contaminate the inside of the chamber (230), the substrate (10), the substrate support (210), the deposition module (100) and / or the driving unit (220). However, the deposition module (100) according to the present invention can solve this problem.

[0088] And the deposition module (100) according to the present invention may further include a second source exhaust unit (143) arranged along the periphery of the source material nozzle unit (110) so that the first source purge unit (142) is positioned between the first source exhaust unit (141) and exhausts surrounding residual gas; and a second source purge unit (144) arranged along the periphery of the source material nozzle unit (110) so that the second source exhaust unit (143) is positioned between the first source purge unit (142) and injects purge gas.

[0089] The second source exhaust unit (143) may be arranged along the periphery of the source material nozzle unit (110) so that the first source purge unit (142) is positioned between the first source exhaust unit (141), and may surround the first source purge unit (142) together with the source material nozzle unit (110) and the first source exhaust unit (141), and may exhaust the surrounding residual gas including the residue of the source material and / or the purge gas in a direction different from the injection direction of the source material (for example, in the opposite direction to the injection direction or in the upper direction). For example, the second source exhaust unit (143) may include a slit or a plurality of exhaust holes formed (or arranged) along the periphery of the first source purge unit (142), and may exhaust the surrounding residual gas through the slit or the plurality of exhaust holes. Here, the second source exhaust unit (143) may also include a plurality of second side source exhaust units (143a) and a plurality of second end source exhaust units (143b) like the first source exhaust unit (141), and may completely surround the first source purge unit (142) together with the source material nozzle unit (110) and the first source exhaust unit (141) by including both ends of the first direction (11) of the first source purge unit (142). Meanwhile, the plurality of second end source exhaust units (143b) may also connect the plurality of second side source exhaust units (143a) in a semicircular or straight shape.

[0090] The second source purge unit (144) can be arranged along the circumference of the source material nozzle unit (110) so that the second source exhaust unit (143) is positioned between the first source purge unit (142), and can surround the second source exhaust unit (143) together with the source material nozzle unit (110), the first source exhaust unit (141), and the first source purge unit (142), and can inject purge gas in a direction intersecting the surface of the substrate (10). For example, the second source purge unit (144) can form an air curtain by spraying the purge gas in a direction perpendicular to the surface of the substrate (10) (for example, downward direction), and can block (or prevent) the source material sprayed from the source material nozzle unit (110) from diffusing to the outside of the source material nozzle unit (110), the first source exhaust unit (141), the first source purge unit (142), and / or the second source exhaust unit (143), and can also induce (residues of) the source material to be exhausted (or discharged) to the second source exhaust unit (143). Here, the second source purge unit (144) may also include a plurality of second side source purge units (144a) and a plurality of second end source purge units (144b) similar to the first source purge unit (142), and may completely surround the second source exhaust unit (143) together with the source material nozzle unit (110), the first source exhaust unit (141), and the first source purge unit (142) including both ends of the second source exhaust unit (143) in the first direction (11). Meanwhile, the plurality of second end source purge units (144b) may also connect the plurality of second side source purge units (144a) in a semicircular or straight shape.

[0091] In addition, the deposition module (100) according to the present invention may further include a second reaction gas exhaust unit (147) arranged along the periphery of the reaction gas nozzle unit (130) so that the first reaction gas purge unit (146) is positioned between the first reaction gas exhaust unit (145) and exhausts residual gas in the surroundings; and a second reaction gas purge unit (148) arranged along the periphery of the reaction gas nozzle unit (130) so that the second reaction gas exhaust unit (147) is positioned between the first reaction gas purge unit (146) and injects purge gas.

[0092] The second reaction gas exhaust unit (147) may be arranged along the periphery of the reaction gas nozzle unit (130) so that the first reaction gas purge unit (146) is positioned between the first reaction gas exhaust unit (145), and may surround the first reaction gas purge unit (146) together with the reaction gas nozzle unit (130) and the first reaction gas exhaust unit (145), and may exhaust the residual gas of the reaction gas and / or the surrounding residual gas including the purge gas in a direction different from the injection direction of the reaction gas (for example, in the opposite direction to the injection direction or in the upper direction). For example, the second reaction gas exhaust unit (147) may include a slit or a plurality of exhaust holes formed (or arranged) along the periphery of the reaction gas nozzle unit (130), and may exhaust the surrounding residual gas through the slit or the plurality of exhaust holes. Here, the second reaction gas exhaust unit (147) may also include a plurality of second side reaction gas exhaust units (147a) and a plurality of second end reaction gas exhaust units (147b), similar to the first reaction gas exhaust unit (145), and may completely surround the first reaction gas purge unit (146) together with the reaction gas nozzle unit (130) and the first reaction gas exhaust unit (145) by including both ends of the first direction (11) of the first reaction gas purge unit (146). Meanwhile, the plurality of second end reaction gas exhaust units (147b) may also connect the plurality of second side reaction gas exhaust units (147a) in a straight line or a semicircle shape.

[0093] The second reaction gas purge unit (148) can be arranged along the periphery of the reaction gas nozzle unit (130) so that the second reaction gas exhaust unit (147) is positioned between the first reaction gas purge unit (146), and can surround the second reaction gas exhaust unit (147) together with the reaction gas nozzle unit (130), the first reaction gas exhaust unit (145), and the first reaction gas purge unit (146), and can inject the purge gas in a direction intersecting the surface of the substrate (10). For example, the second reaction gas purge unit (148) can form an air curtain by injecting the purge gas in a direction perpendicular to the surface of the substrate (10) (for example, downward direction), and can block (or prevent) the reaction gas injected from the reaction gas nozzle unit (130) from diffusing to the outside of the reaction gas nozzle unit (130), the first reaction gas exhaust unit (145), the first reaction gas purge unit (146), and / or the second reaction gas exhaust unit (147), and can also guide the reaction gas (residual gas thereof) to be exhausted to the second reaction gas exhaust unit (147). Here, the second reaction gas purge unit (148) may also include a plurality of second side reaction gas purge units (148a) and a plurality of second end reaction gas purge units (148b), similar to the first reaction gas purge unit (146), and may completely surround the second reaction gas exhaust unit (147) together with the reaction gas nozzle unit (130), the first reaction gas exhaust unit (145), and the first reaction gas purge unit (146) by including both ends of the second reaction gas exhaust unit (147) in the first direction (11). Meanwhile, the plurality of second end reaction gas purge units (148b) may also connect the plurality of second side reaction gas purge units (148a) in a straight line or a semicircle shape.

[0094] At this time, the source sub-module (150) may further include a second source exhaust unit (143) and a second source purge unit (144), and the reaction gas sub-module (160) may further include a first reaction gas exhaust unit (147) and a second reaction gas purge unit (148). Meanwhile, FIG. 3 merely illustrates examples of each of the source sub-module (150) and the reaction gas sub-module (160), and is not limited thereto. For example, in contrast to FIG. 3, the opening of the source nozzle plate (111) is a slit (shape) and a plurality of first end source exhaust parts (141b), a plurality of first end source purge parts (142b), a plurality of second end source exhaust parts (143b) and a plurality of second end source purge parts (144b) are each connected in a straight line shape to a plurality of first side source exhaust parts (141a), a plurality of first side source purge parts (142a), a plurality of second side source exhaust parts (143a) and a plurality of second side source purge parts (144a), and the opening of the reaction nozzle plate (131) is a plurality of injection holes and a plurality of first end reaction gas exhaust parts (145b), a plurality of first end reaction gas purge parts (146b), a plurality of second end reaction gas exhaust parts (147b) and a plurality of second end The reaction gas purge unit (148b) may each connect a plurality of first side reaction gas exhaust units (145a), a plurality of first side reaction gas purge units (146a), a plurality of second side reaction gas exhaust units (147a), and a plurality of second side reaction gas purge units (148a) in a semicircular shape, or the source sub-module (150) and the reaction gas sub-module (160) may be formed in the same shape.

[0095] Accordingly, the deposition module (100) according to the present invention further includes a second source exhaust unit (143) and a second source purge unit (144) around the first source purge unit (142), and further includes a second reaction gas exhaust unit (147) and a second reaction gas purge unit (148) around the first reaction gas purge unit (146), thereby more effectively preventing the source material and the reaction gas from meeting at the periphery of the deposition module (100), and fundamentally blocking particles generated by the gas phase reaction of the source material and the reaction gas.

[0096] Here, the first source purge unit (142) and the second source purge unit (144) may each include a plurality of injection holes (142c, 144c) arranged along the periphery of the source material nozzle unit (110), and each of the plurality of injection holes (144c) of the second source purge unit (144) may be provided offset from the extension direction of the line(s) connecting each of the plurality of injection holes (142c) of the first source purge unit (142) to the opening of the source nozzle plate (111) at the shortest distance. The first source purge unit (142) may include a plurality of injection holes (142c) arranged along the periphery of the source material nozzle unit (110), and the plurality of injection holes (142c) are spaced apart from each other so that the spaces between the plurality of injection holes (142c) are not effectively blocked (or not blocked), and the source material (or the residue thereof) may escape (or diffuse) to the periphery of the first source purge unit (142) between the plurality of injection holes (142c). Accordingly, a second source purge unit (144) including a plurality of injection holes (144c) arranged along the periphery of the source material nozzle unit (110) may be added to block (or prevent) the diffusion of the source material (or the residue thereof) that escapes between the plurality of injection holes (142c) of the first source purge unit (142).

[0097] At this time, each of the plurality of injection holes (144c) of the second source purge unit (144) may be provided so as to be offset from the extension direction of all of the line(s) connecting each of the plurality of injection holes (142c) of the first source purge unit (142) with the opening of the source nozzle plate (111) at the shortest distance, and in the case where the opening of the source nozzle plate (111) is composed of a plurality of injection holes (111a) arranged along the first direction (11), each of the plurality of injection holes (144c) of the second source purge unit (144) may be provided so as to be offset from the extension direction of all of the line(s) connecting each of the plurality of injection holes (142c) with the injection hole (111a) at the shortest distance. That is, each of the injection ports (144c) of the second source purge unit (144) can be positioned (or provided) between the plurality of injection ports (142c) of the first source purge unit (142), and accordingly, the diffusion of the source material (residue thereof) that escapes between the plurality of injection ports (142c) of the first source purge unit (142) can be effectively blocked.

[0098] For example, the two adjacent injection holes (144c) of the second source purge unit (144) may be the same as the injection holes (142c) of the first source purge unit (142) that are the shortest distance from each other, and the injection hole (142c) of the first source purge unit (142) that (first) meets the line extending vertically from the center (or middle) of the line connecting the two adjacent injection holes (144c) of the second source purge unit (144) may be the injection hole (142c) of the first source purge unit (142) that is the shortest distance from both the two adjacent injection holes (144c) of the second source purge unit (144) and the two adjacent injection holes (144c) of the second source purge unit (144). The line connecting the nozzles (142c) can form an isosceles triangle.

[0099] In addition, the first reaction gas purge unit (146) and the second reaction gas purge unit (148) may each include a plurality of injection holes (146c, 148c) arranged along the periphery of the reaction gas nozzle unit (130), similar to the first source purge unit (142) and the second source purge unit (144), and each of the plurality of injection holes (148c) of the second reaction gas purge unit (148) may be provided at an angle to the extension direction of the line(s) connecting each of the plurality of injection holes (146c) of the first reaction gas purge unit (146) to the opening (131a) of the reaction nozzle plate (131) at the shortest distance. That is, each of the plurality of injection holes (148c) of the second reaction gas purge unit (148) may be provided so as to be offset from the extension direction of all of the lines connecting each of the plurality of injection holes (146c) of the first reaction gas purge unit (146) to the opening (131a) of the reaction nozzle plate (131) at the shortest distance, and each of the injection holes (148c) of the second reaction gas purge unit (148) may be positioned (or provided) between the plurality of injection holes (146c) of the first reaction gas purge unit (146), thereby effectively blocking the diffusion of the source material (residue thereof) that escapes between the plurality of injection holes (146c) of the first reaction gas purge unit (146).

[0100]

[0101] FIG. 4 is a drawing showing a thin film deposition device according to another embodiment of the present invention. FIG. 4 (a) is a plan view of the thin film deposition device, and FIG. 4 (b) is a perspective view of the thin film deposition device.

[0102] Referring to FIG. 4, a thin film deposition device according to another embodiment of the present invention will be examined in more detail. However, any details overlapping with those described above in relation to the deposition module according to one embodiment of the present invention will be omitted.

[0103] A thin film deposition device (200) according to another embodiment of the present invention may include a substrate support (210) that supports a substrate (10); a deposition module (100) according to an embodiment of the present invention that deposits a thin film including the source material on the substrate (10); and a driving unit (220) that is connected to the substrate support (210) or the deposition module (100) and moves the substrate support (210) or the deposition module (100) in a second direction (12) intersecting the first direction (11).

[0104] The substrate support (210) can support the substrate (10) and can be moved by the driving unit (220), and can be stably supported so that the substrate (10) does not shake when the substrate support (210) is moved.

[0105] The deposition module (100) can deposit a thin film containing the source material on the substrate (10), and may be a deposition module (100) according to one embodiment of the present invention, and can scan the substrate (10) to deposit (or spray) the source material on the substrate (10).

[0106] The driving unit (220) can be connected to the substrate support (210) or the deposition module (100), and can move the substrate support (210) or the deposition module (100) in a second direction (12) intersecting the first direction (11), and can scan the entire substrate (10) with the deposition module (100) by moving the deposition module (100) relative to the substrate (10) in the second direction (12). The driving unit (220) can move the substrate support (210) or the deposition module (100) when the source material is supplied so that the substrate (10) is scanned by the deposition module (100), thereby allowing the source material to be adsorbed on the entire area of ​​the substrate (10). And the driving unit (220) may include a power source that provides power to move the substrate support (210) or the deposition module (100), a power transmission unit that transmits the power provided from the power source, and a connection unit that is fixed to the substrate support (210) or the deposition module (100) and connects to the power transmission unit, but the configuration is not limited thereto, and it is sufficient if it can move the substrate support (210) or the deposition module (100) in the second direction (12).

[0107] Meanwhile, the thin film deposition device (200) of the present invention may further include a chamber (230) having an internal space, in which the thin film can be deposited, and a substrate support (210), a deposition module (100), and a driving unit (220) may be provided in the internal space of the chamber (230).

[0108]

[0109] In this way, in the present invention, the source material is distributed in the first direction in which the source material nozzle part extends through the source material distribution line, and supplied to the source material nozzle part while diffusing the source material in the diffusion space within the source buffer part and controlling the flow of the source material to the opening of the source nozzle plate by the source blocking plate, thereby controlling the amount of the source material sprayed according to the position of the opening of the source nozzle plate, thereby solving the problem of the deposition thickness of the source material being different between the two ends and the center in the first direction, so that the source material can be uniformly deposited over the entire substrate. At this time, the first gap adjustment unit can be used to at least partially move the source blocking plate relative to the opening of the source nozzle plate, thereby adjusting the gap between the source nozzle plate and the source blocking plate according to the position of the opening of the source nozzle plate, and the source blocking plate having flexibility can be bent by individual elevation of a plurality of elevating members arranged along the first direction, thereby adjusting the gap between the source nozzle plate and the source blocking plate according to the position of the opening of the source nozzle plate, and accordingly, the amount of the source material can be adjusted according to the position of the opening of the source nozzle plate. And when the deposition module includes a reaction gas nozzle unit, the first source exhaust unit including a plurality of first end source exhaust units as well as a plurality of first side source exhaust units, the first source purge unit including a plurality of first end source purge units as well as a plurality of first side source purge units, the first reaction gas exhaust unit including a plurality of first end reaction gas exhaust units as well as a plurality of first side reaction gas exhaust units, and the first reaction gas purge unit including a plurality of first end reaction gas purge units as well as a plurality of first side reaction gas purge units can prevent the source material and the reaction gas from meeting at the upper portion of the substrate, and can prevent the source material and the reaction gas from meeting at the first outer side of the deposition module, thereby reducing particles generated by a vapor phase reaction of the source material and the reaction gas.In addition, by further providing a second source exhaust section and a second source purge section around the first source purge section, and further providing a second reaction gas exhaust section and a second reaction gas purge section around the first reaction gas purge section, it is possible to more effectively prevent the source material and the reaction gas from meeting at the periphery of the deposition module, and to fundamentally block particles generated by the gas phase reaction of the source material and the reaction gas.

[0110]

[0111] The meaning of “on ~” used in the above description includes cases where there is direct contact and cases where there is no direct contact but it is positioned opposite the upper or lower surface, and it is possible to position it opposite the entire upper or lower surface as well as partially opposite the upper or lower surface, and it is used to mean that it is positionally opposite or directly in contact with the upper or lower surface. Therefore, “on the substrate” can refer to the surface (upper or lower surface) of the substrate, or the surface of a film deposited on the surface of the substrate.

[0112]

[0113] While preferred embodiments of the present invention have been illustrated and described above, the present invention is not limited to the above-described embodiments, and those skilled in the art will understand that various modifications and equivalent other embodiments are possible without departing from the spirit and scope of the present invention as claimed in the claims. Accordingly, the technical protection scope of the present invention should be defined by the following claims.

Claims

1. A source material nozzle portion extending in the first direction and spraying the source material; and A source material distribution line for distributing the source material in the first direction and supplying it to the source material nozzle unit; The above source material nozzle part, A source nozzle plate having an opening formed along the first direction; A source buffer section that provides a diffusion space for the source material distributed and supplied from the source material distribution line; and A deposition module including a source blocking plate provided on the source nozzle plate in a diffusion space of the source material, the source blocking plate having an area larger than the opening of the source nozzle plate.

2. In claim 1, The above source material nozzle part, A deposition module further comprising a first gap adjusting unit that adjusts the gap between the source nozzle plate and the source blocking plate according to the position of the opening of the source nozzle plate by at least partially moving the source blocking plate relative to the opening of the source nozzle plate.

3. In claim 2, A deposition module in which the first gap adjusting member includes a plurality of elevating members arranged along the first direction and at least partially elevating the source blocking plate.

4. In claim 3, The above source blocking plate is a deposition module having flexibility and capable of bending by individual elevation of the plurality of elevation members.

5. In claim 4, The above source blocking plate is a deposition module made of a metal material.

6. In claim 5, The above source blocking plate is a deposition module made of aluminum (Al) and has a thickness of 1 to 5 mm.

7. In claim 1, The source material nozzle part and the reaction gas nozzle part are arranged parallel to each other in the first direction and inject a reaction gas that reacts with the source material; and Further comprising a reaction gas distribution line for distributing the reaction gas in the first direction and supplying it to the reaction gas nozzle unit; The above reaction gas nozzle part, A reaction nozzle plate having an opening formed along the first direction; A reaction gas buffer unit that provides a diffusion space for the reaction gas distributed and supplied from the reaction gas distribution line; and A deposition module having a larger area than the opening of the reaction nozzle plate and including a reaction gas blocking plate provided on the reaction nozzle plate in the diffusion space of the reaction gas.

8. In claim 7, The above reaction gas nozzle part, A deposition module further comprising a second gap adjustment unit that adjusts the gap between the reaction nozzle plate and the reaction gas blocking plate according to the position of the opening of the reaction nozzle plate by at least partially moving the reaction gas blocking plate with respect to the opening of the reaction nozzle plate.

9. In claim 7, A deposition module in which the reaction gas nozzle section further includes a plasma forming section for generating plasma, and injects the reaction gas in the form of radicals using the plasma.

10. In claim 9, The above reaction gas nozzle part, A deposition module further comprising a baffle provided within the reaction gas buffer section to separate the diffusion space of the reaction gas into a formation space of the plasma and a diffusion space of radicals, and having a plurality of distribution holes for providing a passage for the radicals of the reaction gas.

11. In claim 1, A first source exhaust unit is arranged around the source material nozzle unit to surround the source material nozzle unit and exhausts the residue of the source material in a direction different from the injection direction of the source material; and A deposition module further comprising a first source purge unit disposed along the circumference of the source material nozzle unit so that the first source exhaust unit is positioned between the source material nozzle unit and the first source purge unit, and injecting a purge gas.

12. In claim 11, The above first source exhaust part is, A plurality of first side source exhaust parts provided in parallel in the first direction symmetrically centered around the source material nozzle part; and The source material nozzle portion includes a plurality of first end source exhaust portions provided at each of the first direction ends and extending in a direction at least partially intersecting the first direction to connect the plurality of first side source exhaust portions, The above first source purification unit is, A plurality of first side source purge units provided in parallel in the first direction symmetrically centered on the source material nozzle unit; and A deposition module comprising a plurality of first end source purge units, each corresponding to a plurality of first end source exhaust units, and extending at least partially in a direction intersecting the first direction to connect the plurality of first side source purge units.

13. In claim 11, A second source exhaust unit is arranged along the circumference of the source material nozzle unit so that the first source purge unit is positioned between the first source exhaust unit and exhausts residual gas around it; and A deposition module further comprising a second source purge unit disposed along the circumference of the source material nozzle unit such that the second source exhaust unit is positioned between the first source purge unit and the second source purge unit, and injecting a purge gas.

14. In claim 13, The first source purge unit and the second source purge unit each include a plurality of nozzles arranged along the periphery of the source material nozzle unit, A deposition module in which each of the plurality of nozzles of the second source purge unit is provided at an offset from the extension direction of the line connecting each of the plurality of nozzles of the first source purge unit with the opening of the source nozzle plate at the shortest distance.

15. In claim 7, A first reaction gas exhaust unit is arranged around the reaction gas nozzle unit to surround the reaction gas nozzle unit and exhausts residual gas of the reaction gas in a direction different from the injection direction of the reaction gas; and A deposition module further comprising a first reaction gas purge unit that is arranged along the periphery of the reaction gas nozzle unit so that the first reaction gas exhaust unit is positioned between the reaction gas nozzle unit and the first reaction gas purge unit that injects purge gas.

16. In claim 15, The above first reaction gas exhaust section is, A plurality of first side reaction gas exhaust parts provided in parallel in the first direction symmetrically centered around the reaction gas nozzle part; and A plurality of first end reaction gas exhaust portions are provided at each of the first direction ends of the reaction gas nozzle portion, and extend in a direction at least partially intersecting the first direction to connect the plurality of first side reaction gas exhaust portions, The above first reaction gas purging unit is, A plurality of first side reaction gas purge units provided in parallel in the first direction symmetrically centered on the reaction gas nozzle unit; and A deposition module including a plurality of first end reaction gas purge sections, each corresponding to a plurality of first end reaction gas exhaust sections, and extending at least partially in a direction intersecting the first direction to connect the plurality of first side reaction gas purge sections.

17. In claim 15, A second reaction gas exhaust unit is arranged along the periphery of the reaction gas nozzle unit so that the first reaction gas purge unit is positioned between the first reaction gas exhaust unit and exhausts the surrounding residual gas; and A deposition module further comprising a second reaction gas purge unit that is arranged along the periphery of the reaction gas nozzle unit so that the second reaction gas exhaust unit is positioned between the first reaction gas purge unit and injects purge gas.

18. Substrate support for supporting the substrate; A deposition module according to any one of claims 1 to 17 for depositing a thin film containing the source material on the substrate; and A thin film deposition apparatus comprising a driving unit connected to the substrate support or the deposition module and moving the substrate support or the deposition module in a second direction intersecting the first direction.

Images