Two-layer film of magnetic body and insulator, tunnel magnetoresistive element, and magnetic memory

Abstract

A two-layer film of a magnetic body and an insulator according to the present invention comprises an antiferromagnetic layer that has a hexagonal crystal structure, with at least one surface thereof being the (10-10) plane of the antiferromagnetic body, and an insulator layer that is composed of two, three, or four kinds of atoms layered on the (10-10) plane. A two-layer film of a magnetic body and an insulator according to the present invention comprises an antiferromagnetic layer that has a hexagonal crystal structure, with at least one surface thereof being the (0001) plane of the antiferromagnetic body, and an insulator layer that is composed of two, three, or four kinds of atoms layered on the (0001) plane. A tunnel magnetoresistive element according to the present invention comprises a second antiferromagnetic film layer that is layered on the insulator of the two-layer film. A magnetic memory according to the present invention comprises a plurality of the tunnel magnetoresistive elements.

Description

Double-layered film of magnetic material and insulator, tunnel magnetoresistance element, and magnetic memory

[0001] This disclosure relates to a two-layer film of a magnetic body and an insulator, a tunnel magnetoresistive element, and a magnetic memory. This application claims priority to U.S. Provisional Patent Application No. 63 / 472,069, filed June 9, 2023, the contents of which are incorporated herein by reference.

[0002] A magnetoresistive element is known in which an insulating layer is sandwiched between a ferromagnetic layer whose magnetization direction is variable and a ferromagnetic layer whose magnetization direction is fixed. To increase the speed of such a magnetoresistive element, Mn is used instead of the ferromagnetic material. ３ The use of an antiferromagnetic layer such as Sn has been considered (see, for example, H. Tsai, et al., “Electrical manipulation of a topological antiferromagnetic state,” Nature, volume 580, pages 608-613 (2020)).

[0003] In WO2022 / 220251, Mn ３ It is disclosed that by sandwiching Ta between the Sn and insulating contact layer, the roughness of the interface is suppressed and smoothed, and the read signal of the magnetic memory element is strengthened.

[0004] The ferromagnetic layer is made of Mn ３ It has been shown by X. Chen, et al., "Octupole-driven magnetoresistance in an antiferromagnetic tunnel junction", Nature 613, 490 (2023) that a tunnel magnetoresistance element can be obtained by using an antiferromagnetic layer such as Sn and sandwiching an insulating layer such as MgO between two antiferromagnetic layers.

[0005] International Patent Application Publication No. 2022 / 220251

[0006] H. Tsai, et al. , “Electrical manipulation no fatopological tiferromagnetic state,” Nature, volume 580, pages 608-613 (2020) X. Chen, et al. , “Octupole-driven magnetoresistance in an antiferromagnetic tunnel junction”, Nature 613, 490 (2023)

[0007] The present invention aims to provide a tunneling magnetoresistive element, a double-layer film of a magnetic material and an insulator, which can obtain a relatively large tunneling magnetoresistive ratio, and also aims to provide a magnetic memory which can obtain a relatively large read signal.

[0008] According to one aspect of the present disclosure, the double-layered film of a magnetic material and an insulator has a hexagonal crystal structure and includes an antiferromagnetic layer, at least one surface of which is a (10-10) plane of an antiferromagnetic material, and an insulator layer containing a compound made of two, three, or four types of atoms stacked on the (10-10) plane.

[0009] According to another aspect of the present disclosure, the double-layer film of a magnetic material and an insulator has a hexagonal crystal structure and includes an antiferromagnetic layer, at least one surface of which is a (0001) plane of an antiferromagnetic material, and an insulator layer containing a compound consisting of two, three, or four types of atoms stacked on the (0001) plane.

[0010] According to yet another aspect of the present disclosure, the tunneling magnetoresistive element has a second antiferromagnetic film layer stacked on the insulator of the two-layer film.

[0011] According to yet another aspect of the present disclosure, a magnetic memory includes a plurality of the tunnel magnetoresistive elements described above.

[0012] A more complete understanding of the present disclosure and many of its attendant advantages will be readily obtained as it becomes better understood by reference to the following detailed description when considered in conjunction with the accompanying drawings, in which: Figure 1 is a cross-sectional view of an embodiment of a bilayer film of a magnetic material and an insulator; Figure 2 is a cross-sectional view of an embodiment of a tunneling magnetoresistive element; Figure 3 is a cross-sectional view illustrating the operation of the tunneling magnetoresistive element; Figure 4 is a circuit diagram of an embodiment of a magnetic memory;

[0013] When amounts, concentrations, or other values ​​or parameters are given herein as ranges, and / or when the description includes a list of upper and lower limits, this is understood to specifically disclose all integers and fractions within the given range, and all ranges formed from any pair of any upper and lower limits, regardless of whether a narrower range is separately disclosed. When a range of numerical values ​​is recited herein, unless otherwise specified, the range is intended to include all integers and fractions within the range, as well as its endpoints. As an example, the range of 1 to 10 fully describes and includes the independent subranges 3.4 to 7.2, as well as the listing of values ​​1, 4, 6, and 10.

[0014] In an embodiment of the present disclosure, a tunnel magnetoresistive element having an insulating layer sandwiched between multiple antiferromagnetic layers uses a specific material for the insulating layer depending on the surface orientation of the antiferromagnetic layer, thereby achieving a relatively large tunnel magnetoresistance (TMR) ratio. Therefore, when this tunnel magnetoresistive element is used in a magnetic memory, a relatively large read signal can be obtained.

[0015] The embodiments of each element will be described below.

[0016] [Magnetic and insulator double layer film and tunnel magnetoresistance element]

[0017] 1 is a cross-sectional view showing one embodiment of a two-layer film of a magnetic material and an insulator. An insulator layer 12 is laminated on an antiferromagnetic material layer 11.

[0018] 2 is a cross-sectional view showing one embodiment of a tunnel magnetoresistive element. An insulator layer 12 is laminated on an antiferromagnetic layer 11, and a second antiferromagnetic layer 13 is further laminated on the insulator layer 12.

[0019] In the double-layered film of a magnetic material and an insulator and the tunnel magnetoresistive element of the present disclosure, the materials of the antiferromagnetic layer 11 and the second antiferromagnetic layer 13 may be the same or different. ３ Sn, Mn ３ Ge, Mn ３ Ga, and Mn ３ A ｘ B １－ｘ (A and B are each one selected from Sn, Ge, and Ga, 0<x<1) These crystals have cluster magnetic octupole-polarized spins, and the net spin polarization defined by the magnetic octupole can be rotated by applying a magnetic field or passing an electric current through them.

[0020] Furthermore, when the plane orientation of the surface of the antiferromagnetic layer 11 in contact with the insulating layer is the (10-10) plane, it is preferable that the material of the insulator laminated on the (10-10) plane be one shown in Table 1, and when the plane orientation of the surface of the antiferromagnetic layer 11 in contact with the insulating layer is the (0001) plane, it is preferable that the material of the insulating layer laminated on the (0001) plane be one shown in Table 2.

[0021] When the plane orientation of the surface of the antiferromagnetic layer 11 in contact with the insulating layer is the (10-10) plane, more preferable materials for the insulator layer 12 are those shown in Table 3, and when the plane orientation of the surface of the antiferromagnetic layer 11 in contact with the insulating layer is the (0001) plane, more preferable materials for the insulator layer 12 are those shown in Table 4.

[0022]

[0023]

[0024]

[0025]

[0026] The thickness of each of the antiferromagnetic layer 11 and the second antiferromagnetic layer 13 is, for example, 0.5 nm to 40 nm, preferably 0.5 nm to 30 nm, and more preferably 0.5 nm to 20 nm. The thickness of the insulator layer 12 is, for example, 0.5 nm to 5 nm, preferably 0.5 nm to 4 nm, and more preferably 1 nm to 3 nm. By making each layer have such a thickness, the resistance value can be adjusted to a value appropriate for device application.

[0027] By performing simulations such as those described below, the inventors of the present disclosure discovered that a relatively large TMR ratio can be obtained by using a specific material for the insulator layer depending on the surface orientation of the antiferromagnetic layer.

[0028] (Simulation Method)

[0029] To search for a material suitable for the insulating layer of the tunneling magnetoresistance element, we performed simulations in the following three steps.

[0030] (1) Mn, the material of the antiferromagnetic layer ３ Sn, Mn ３ Ge, Mn ３ Ga, and Mn ３ A ｘ B １－ｘ (A and B are one selected from Sn, Ge, and Ga, respectively, 0<x<1) A crystal plane with a shape similar to that of the material exists, insulation is ensured, and it is possible to create the material experimentally.

[0031] (2) Search for materials with stable interfaces

[0032] (3) Search for materials with a large TMR ratio

[0033] The following explains each in turn.

[0034] (1) Mn, the material of the antiferromagnetic layer ３ Sn, Mn ３ Ge, Mn ３ Ga, and Mn ３ A ｘ B １－ｘ(A and B are one selected from Sn, Ge, and Ga, respectively, 0<x<1) A crystal plane with a shape similar to that of the material exists, insulation is ensured, and it is possible to create the material experimentally.

[0035] The crystal structures of materials published in The Materials Project (https: / / materialsproject.org / ) are obtained, and for each material, a material is searched for that has a "crystal plane with a similar shape" to each of the hexagonal (10-10) and (0001) planes used in the antiferromagnetic layer. ３ Sn, Mn ３ Ge, Mn ３ The crystal structure of Ga was that published in the Materials Project. ３ A ｘ B １－ｘ For (A, B = Sn, Ge, Ga, 0<x<1), the weighted average of x in the crystal structure corresponding to the atoms of A and B is used. The "crystal plane with a similar shape" is Mn ３ Sn, Mn ３ Ge, Mn ３ Ga, Mn ３ A ｘ B １－ｘ The (10-10) plane and the (0001) plane can be made to coincide by lattice deformation within a certain range. The (10-10) plane and the (0001) plane are parallelograms, with sides of lengths a and b (a < b) connected at an angle θ. Here, the range of lattice deformation is -0.07 < p, q < 0.07 and -0.07 < p + q < 0.07, assuming that a, b → a × (1 + p), b × (1 + q). In addition, the angle θ is deformed within ±3.5%.

[0036] Furthermore, from among the materials searched for above, materials are selected that have two, three, or four types of constituent atoms, a band gap of 0.5 eV or more to ensure insulation, a negative formation energy, an energy above the convex whole value of 0.15 eV / atom or less, and are registered in the ICSD (Inorganic Crystal Structure Database).

[0037] (2) Search for materials with stable interfaces

[0038] For each of the insulators in Tables 1 and 2 obtained in (1), Mn ３ Sn, Mn ３ Ge, Mn ３ Ga, Mn ３ A ｘ B １－ｘ At least one of these is selected, and simulation calculations are performed to create a two-layer structure of insulator layer / magnetic layer / vacuum surface. The stacking plane here is the (10-10) plane of the magnetic layer for the insulators in Table 1, and the (0001) plane of the magnetic layer for the insulators in Table 2. In order to optimize the structure near the interface of the two-layer structure, first-principles calculations are used to set the interlayer distance and the position of the layer stacking plane so that energy is minimized, and then local structure optimization of the internal coordinates of atoms in layers 2-4 near the interface is performed.

[0039] The interfacial energy of the bilayer structure obtained above is calculated by first-principles calculation. This makes it possible to identify insulators that can form a stable interface with an antiferromagnetic layer. In calculating the interfacial energy, in addition to the bilayer structure, the energies of the insulator alone, the magnetic material alone, the surface of the insulator, and the surface of the magnetic material are calculated and subtracted from the bilayer structure. Here, the thickness of each layer is set to 0.8 nm or more.

[0040] These energies and optimal interface structures were calculated using a first-principles calculation code: Quantum ESPRESSO (QE) (see P. Giannozzi, et al., J. Phys.: Condens. Matter 21, 395502 (2009)). The generalized gradient approximation by Perdew, Burke, and Ernzerhof (PBE) was used for the exchange-correlation functional in the framework of the ultrasoft pseudopotential (USPP) method (see, e.g., G. Kresse and D. Joubert, Phys. Rev. B 59, T 1758 (1999)). The USPP was obtained from the QE website (see, https: / / www.quantum-espresso.org / ). The energy cutoffs for the wave function and charge density were set to 50-80 Ry and 80-800 Ry, respectively. These calculations were performed under non-magnetic conditions.

[0041] The interfacial energy calculated above is 2 J / m ２ The following materials are considered to be insulating materials that can be stably used to form a laminated structure with a magnetic material.

[0042] (3) Search for materials with a large TMR ratio

[0043] The simulation target was a structure consisting of an insulator layer / magnetic layer A / insulator layer / magnetic layer B, in which the bilayer structure was repeated twice, with the vacuum layer removed. Periodic boundary conditions were imposed on this four-layer structure, and the tunneling conductivity was calculated after taking magnetic properties into account to estimate the TMR ratio. To theoretically simulate the TMR ratio from first principles, the PWCOND package, a QE package, was used, which calculates ballistic transport along the stacking direction (z direction) by solving a scattering problem for the Bloch wave function obtained by DFT calculation. The k = (kx, ky) point mesh on the xy plane was varied from 32 × 32 to 64 × 64, and the transmittance T was calculated for each relative angle between the magnetic configurations (cluster magnetic octupole moments of the two magnetic layers). The transmittance T is the maximum (minimum) value of the transmittance. Using Tmax(min), the TMR can be evaluated as (Tmax - Tmin) / Tmin.

[0044] These simulation calculations have revealed that in a tunnel magnetoresistive element, when the plane orientation of the surface of antiferromagnetic layer 11 in contact with the insulating layer is the (10-10) plane, the insulating layer laminated on the (10-10) plane is one shown in Table 1, and when the plane orientation of the surface of antiferromagnetic layer 11 in contact with the insulating layer is the (0001) plane, the insulating layer laminated on the (0001) plane is one shown in Table 2, the TMR ratio becomes relatively large.

[0045] In one embodiment of the present disclosure, the band gap of the compound contained in the insulator layer is 0.5 eV or more, in a more preferred embodiment, 0.8 eV or more, and in an even more preferred embodiment, 1.5 eV or more.

[0046] In one embodiment of the present disclosure, the compound contained in the insulator layer has a negative formation energy and an energy above the convex whole value of 0.15 eV / atom or less. In a more preferred embodiment, the compound contained in the insulator layer has an energy above the convex whole value of 0.02 eV / atom or less.

[0047] In one embodiment of the present disclosure, the interfacial energy of the interface between the two-layer film of the magnetic material and the insulator calculated by first-principles calculation is 2 J / m ２ In a more preferred embodiment, the interfacial energy of the interface between the two-layer film of the magnetic material and the insulator, calculated by first-principles calculation, is 1 J / m or less. ２ The following is the result.

[0048] In one embodiment of the present disclosure, the TMR ratio of the tunneling magnetoresistive element is 300% or more. In a more preferred embodiment, the TMR ratio of the tunneling magnetoresistive element is 1000% or more.

[0049] In one embodiment of the present disclosure, the insulating layer and the two antiferromagnetic layers are in direct contact with each other. In another embodiment, one or more additional layers are interposed between the insulating layer and the antiferromagnetic layer. The additional layers disposed between the antiferromagnetic layer and the insulating layer are not particularly limited as long as they can be formed by known film formation methods such as sputtering or epitaxial growth (MBE, MOCVD, etc.). In this case, examples of the one or more additional layers include layers containing Ta or Ru.

[0050] [Method of manufacturing a double-layered film of a magnetic material and an insulator and a tunnel magnetoresistance element]

[0051] The double-layered film of a magnetic material and an insulator and the tunnel magnetoresistive element can be fabricated by the following procedure: (1) creating an antiferromagnetic layer 11, (2) laminating an insulator layer 12 on the antiferromagnetic layer 11, and (3) laminating a second antiferromagnetic layer 13 on the insulator layer 12. This will be explained in detail below.

[0052] (1) Preparation of the antiferromagnetic layer 11

[0053] The antiferromagnetic layer 11 can be produced by depositing the material of the present disclosure on a substrate that will serve as an electrode by known film-forming means such as sputtering or epitaxial growth (MBE, MOCVD, etc.).

[0054] When sputtering is used, the target material is, for example, Mn ３ An example is Sn.

[0055] Examples of the material of the substrate that serves as the electrode (substrate electrode layer) include W, Pt, and Ta, and the thickness thereof is typically 1 nm to 20 nm, preferably 1 nm to 5 nm.

[0056] (2) Laminating the insulating layer 12 onto the antiferromagnetic layer 11

[0057] Next, the insulating layer 12 is formed on the antiferromagnetic layer 11 by a known film forming method such as sputtering. When sputtering is used, a metal oxide, nitride, oxynitride, or the like can be used as the target material. Reactive sputtering in an oxygen or nitrogen atmosphere may also be used.

[0058] (3) Laminating the second antiferromagnetic layer 13 on the insulator layer 12

[0059] The antiferromagnetic layer 13 can then be formed by depositing the material of the present disclosure on the insulator layer 12 by known deposition means such as epitaxial growth (MBE, MOCVD, etc.).

[0060] When sputtering is used, the target material is, for example, Mn ３ An example is Sn.

[0061] [Operation of tunneling magnetoresistance element]

[0062] 3 is a cross-sectional view showing one embodiment of a tunneling magnetoresistive element. An insulator layer 12 and a second antiferromagnetic layer 13 are stacked in this order on the surface of an antiferromagnetic layer 11 on a substrate electrode layer 10. Examples of materials for the substrate electrode layer 10 include spin current generating materials such as W, Pt, and Ta.

[0063] The net spin polarization direction of the first antiferromagnetic layer is preferably perpendicular to the antiferromagnetic layer 11, but may be tilted. In this tunnel magnetoresistive element, the electrical resistance changes depending on the relative angle between the spin polarization direction of the antiferromagnetic layer 11 and the spin polarization direction of the second antiferromagnetic layer 13. Therefore, by rotating the spin polarization direction of the antiferromagnetic layer 11, it is possible to switch between a low resistance state and a high resistance state. Such a tunnel magnetoresistive element can function as a memory cell by using the difference in resistance value before and after switching as memory information.

[0064] For example, when a current is passed through the substrate electrode layer 10 in a layer-parallel direction (for example, the direction of the horizontal dashed arrow in FIG. 3 ), a spin current is generated in a direction perpendicular to the current due to spin-orbit interaction (spin Hall effect), generating a magnetic torque in the antiferromagnetic layer 11. Changing the direction of the current through the substrate electrode layer 10 causes a rotation of the spin polarization direction in the antiferromagnetic layer 11.

[0065] As explained above, the antiferromagnetic layer 11 and the second antiferromagnetic layer 13 may be made of the same material or different materials. From the viewpoint of increasing the difference between the low resistance state and the high resistance state, it is preferable that the spin polarization direction of the antiferromagnetic layer 11 and the spin polarization direction of the second antiferromagnetic layer 13 are oriented in parallel planes. That is, if the spin polarization direction of the antiferromagnetic layer 11 is approximately perpendicular to the layer direction, it is preferable that the spin polarization direction of the second antiferromagnetic layer 13 is also approximately perpendicular to the layer direction. If the spin polarization direction of the first antiferromagnetic layer 11 is approximately parallel to the layer direction, it is preferable that the spin polarization direction of the second antiferromagnetic layer 13 is also approximately parallel to the layer direction.

[0066] In the tunnel magnetoresistive element of the present disclosure, a relatively large TMR ratio can be obtained by using a specific material for the insulating layer depending on the plane orientation of the surface of the antiferromagnetic layer.

[0067] [Magnetic memory]

[0068] A magnetic memory can be configured by using multiple tunneling magnetoresistive elements as described above as memory cells. This magnetic memory can have a known configuration. For example, the magnetic memory structures described in U.S. Patent Application Publication Nos. 2022 / 0149269 and 2019 / 0267540 can be used. The descriptions of U.S. Patent Application Publication Nos. 2022 / 0149269 and 2019 / 0267540 regarding the structure of the magnetic resistive memory are incorporated herein by reference.

[0069] 4 is a circuit diagram showing one embodiment of wiring of memory cells constituting a part of the magnetic memory of the present disclosure. Memory cells such as those shown in FIG. 4 are arranged in a matrix and driven.

[0070] In each memory cell, an insulating layer 12 and a second antiferromagnetic layer 13 are laminated in this order on the surface of an antiferromagnetic layer 11 laminated on a substrate electrode layer 10, thereby forming a tunneling magnetoresistive element. The operation of this tunneling magnetoresistive element is the same as that described for the tunneling magnetoresistive element.

[0071] Two power supply electrodes 15 are provided on the substrate electrode layer 10, and the power supply electrodes 15 are connected to the sources of transistors 19, respectively. The gates of the transistors 19 are connected to a word line 17, and the drains of the two transistors 19 are connected to a first write bit line 18 and a second write bit line 18′, respectively. The second antiferromagnetic layer 13 is connected to a read bit line 16 via an electrode 14.

[0072] Here, when switching data by changing the resistance value, in order to achieve one data state, the first write bit line 18 is set to H level and the second write bit line 18' is set to L level. Then, by setting the word line 17 to H level, a current flows in the substrate electrode layer 10 from the first write bit line 18 to the second write bit line 18', and the spin polarization of the antiferromagnetic layer 11 becomes a state corresponding to this current, which becomes one data state.

[0073] To switch this data, the first write bit line 18 is set to L level and the second write bit line 18' is set to H level. Then, by setting the word line 17 to H level, a current flows in the substrate electrode layer 10 from the second write bit line 18' to the first write bit line 18, changing the spin polarization of the antiferromagnetic layer 11 and switching the data.

[0074] When reading data stored in a memory cell, either the first write bit line 18 or the second write bit line 18' is set to H level and the other is opened. Then, by setting the read bit line 16 to L level and the word line 17 to H level, a current flows from the first write bit line 18 and the second write bit line 18' to the read bit line 16, and by measuring the magnitude of this current, it is possible to determine whether the memory cell is in a high resistance state or a low resistance state and obtain the data written in the memory cell.

[0075] In one embodiment of the magnetic memory, memory cells such as those shown in FIG. 4 are arranged in a matrix, and predetermined write and read operations are performed by controlling the levels of the write bit line, read bit line, and word line by a controller.

[0076] In the magnetic memory of this embodiment, a relatively large read signal can be obtained by using a specific material for the insulating layer depending on the plane orientation of the surface of the antiferromagnetic layer.

[0077] Obviously, numerous modifications and variations of the present invention are possible in light of the above teachings. It is therefore to be understood that, within the scope of the appended claims, the invention may be practiced otherwise than as specifically described herein.

[0078] The two-layer film of the magnetic material and the insulator of the present disclosure is useful for obtaining a tunnel magnetoresistance element, and the tunnel magnetoresistance element is useful for obtaining a magnetic memory.

[0079] 10 substrate electrode layer, 11 antiferromagnetic layer, 12 insulator layer, 13 second antiferromagnetic layer, 14 electrode, 15 power supply electrode, 19 transistor, 17 word line, 18 first write bit line, 18' second write bit line, 16 read bit line

Claims

1. A bilayer film of a magnetic material and an insulator, having an antiferromagnetic layer with a hexagonal crystal structure, at least one surface of which is a (10-10) surface of an antiferromagnetic material, and an insulator layer containing a compound consisting of two, three, or four types of atoms stacked on the (10-10) surface.

2. A bilayer film of a magnetic material and an insulator, having an antiferromagnetic layer with a hexagonal crystal structure, at least one surface of which is the (0001) surface of an antiferromagnetic material, and an insulator layer containing a compound consisting of two, three, or four types of atoms stacked on the (0001) surface.

3. When the compound is BeTe, YbSe, PbF ２ , GeO ２ , PtO ２ , ThO ２ , Surf s, BN, LiF, Li ２ S, ZnSe, MgO, PtO ２ , BaO, LiC, CaSe, TiO ２ , FeS ２ , BN, CaS, YbS, AlAs, Li ２ Se, CdS, BeO, BN, CaF ２ , BeAl ２ O ４ , NaNbO ３ , SrZrO ３ , KMgF ３ , KTaO ３ , K ２ PtF ６ , BaZrO ３ , Mg ２ PN ３ , K ２ TiF ６ , KCuO ２ , NaTaO ３ , KNbO ３ , NaNbO ３ , SrHfO ３ , NaTaO ３ , Na ２ PdC ２ , Mg ３ (BO ３ ) ２ , Li ２ SiO ３ , BaTiO ３ , SrTiO ３ , KNbO ３ , BaTiO ３ , CaTiO ３ , LiSi ２ N ３ , KZnF ３ , TiCoSb, BaTiO ３ , LiSiNO, KNbO ３ , BeO, Mg ３ NF ３ , SbOF, ZnF ２ , K ２ ReF ６ , K ２ GeF ６ Beeiiｮ ２ ,, ２ PdF ６ ,38,200 ２ ,Mg｡lBO ４ ,4eO ２ ,2bｭg0 ３ ,,0,ii ３ 38 ２ ,LiZnAss,iiBC,bPeｳbbbiZn,,a｟ii0 ３ ,ｳcF ３ ,119 ２ ,8bbgｯ ３， Li ３ PO ４ ,ZnnggF ３ ,Beｦ ２ ,L!Crｯ ３ ,7gWO ４ ,0007 ４ ,NiONdCrｯ ３ ,7n ３ (39) ３ ) ) ２ ,0eWO ４ ,79 ３ ,TiPbO ３ ,TiPbO ３ ,8166 ３ ,PbｯOiWO ４ ,,fPbO ３ The ,? ２ ,2 ４ 38 ２ 9,1189 ２ The ２ ,79 ２ The ２ PdF ４ ,222 ３ 9 ２ The ３ rO,Dyｳ｢rr､yｳ 9,539 ５ ,9.29 ２ ,0e29 ２ ,8iO ２ The ２ ,3030 ３ ,Laeeｯ ３ ,7o0 ３ ,bNa ２ AuO ２ , KMnF ３ , U.C.O. ５ , CoF ２ , GdSI, RbVF ３ , Li ２ CO ３ , FeF ２ , KVF ３ , KrF ２ , KNa ２ AuO ２ , ScF ３ , NaMgF ３ , SeO ２ , KCrF ３ , LiB ６ C, AgBr, SrAlSiH, KBr, BaAlSiH, InHO ２ , GaH ２ , Ba ２ MgH ６ , HgH ２ NCl, Sr ２ MgH ６ , BN, KNbO ３ , SrAlGeH, KH ４ O ２ F, CuI, TiGePt, HoSI, Li ２ PNO ２ , ZrPbO ３ , GeO ２ , CO ２ , Na ２ TcF ６ , Mg(BC) ２ , K ２ TcF ６ , GeF ２ , ZnMoO ４ , LaGaO ３ , LaF ３ , BaBClF ４ , BaGaH ５ , SrH ２ , SrHN, BeCr ２ O ４ 2. The double-layered film of claim 1, which comprises at least one material selected from the group consisting of BaAlGeH and BaAlGeH.

4. The compound in question is GeO ２ , PtO ２ , FeS ２ , BeAl ２ O ４ , K ２ TIF ６ , Mg ３ (BO ３ ) ２ , K ２ GeF ６ , BeSiN ２ , K ２ PDF ６ ,BN,LiBC,Mn ３ (BO ３ ) ２ , TiPbO ３ , PbO, MnO ２ , LiB ６ C, InHO ２ , GaH ２ , Mg(BC) ２ , BeCr ２ O ４ 2. The double-layered film of claim 1, comprising at least one material selected from the group consisting of a magnetic material and an insulator.

5. When the compound is TiO ２ , AlF ３ , GeO ２ , PtO ２ , AlN, NaF, GaN, BN, LiF, YbO, MgO, BP, Be ２ C, BN, Li ２ O, ZnO, ZnO, ZnO, BeO, BN, TiO ２ , LuPO ４ , AlCuO ２ , NaNbO ３ , Na ２ SO ４ , Li ２ ZrN ２ , KMgF ３ , KTaO ３ , ScCuO ２ , NaNbO ２ , K ２ PtF ６ , BaAl ２ O ４ , LiNbO ２ , Mg ２ PN ３ , K ２ TiF ６ , ErPO ４ , HoPO ４ , NaTaO ３ , Ge ２ N ２ O, ScPO ４ , TbPO ４ , KNbO ３ , TlNO ２ , Si ２ N ２ , Cd ２ SiO ４ , BaCO ３ , HfSiO ４ , TaBO ４ , Li ２ SiO ３ , BaTiO ３ , YPO ４ , AlAsO ４ , SrTiO ３ , KNbO ３ , LaAlO ３ , AlPO ４ , DyPO ４ , BaTiO ３ , CaTiO ３ ,LiccO ２ ,ｬiｳi ２ 8. ３ ,0000 ３ ,TmPO ４ ,Baaiｯ ３ ,LiCa｡lF ６ ,,LiｳO ４ ,KLi｢eｦ ４ ,,LiｳO ４ ,)AlｳiO ４ ,Sr,i｡lF ６ ,,LiｳO ４ ,3iｯ ２ ,Be ３ 8. ２ ,3iｯ ２ ,SiC,Kb ３ ,900 ４ ,3e,3i9 ２ ,CsCu ３ ﳳ ２ ,, ２ eeｦ ６ ,PtO ２ ,, ２ PdF ６ ,38,210 ３ ,SiC,ｮa｢e ４ bｯ ７ ,aaagPO ４ ,KAlｳiｯO ４ ,2bｭg0 ３ ,CsP,CdSO ４ ,8b｢O ４ ,Cd(3bO ３ ) ) ２ ,4tF ４ ,Naaii ２ 8. ３ ,Ca ２ PN ３ ,LiAlPdF ６ ,Ca(3bｯ ３ ) ) ２ ,3r(3bｯ ３ ) ) ２ ,3a(3bｯ ３ ) ) ２ ,4iO ２ The ４ ,i ２ 38 ２ ,LiYb｡lF ６ ,Baaiｦ ３ ,b(b) ４ ) ) ２ ,8a ２ eeｴeｯ ６ ,3r1eeeｯ ６ ,, ２ 39 ３ ,ｳcF ３ ,3iｯ ２ ,2b ２ PdC ２ ,2b ２ PtC ２ ,Mg(3eX) ２ ,7geeｯ ４ ,8bbgｯ ３ ,LiCaaaaF ６ ,, ２ ｳiｰ ６ ,TlPO ４ ,｡l ４ 39 ４ ,ZnnggF ３ ,, ２ eeｦ ６ ,aaee ２ 8. ３ ,i ２ eeｯ ３ ,lTl(ooO ４ ) ) ２ ,bbiCrｯ ４ ,8a ２ 3rｯ ４ ,CrCdO ４ , 3r ２ 3iｯ ４ ,8iｳeO ４ ,L!Crｯ ３ ,Baｮiｯ ２ ,31719 ３ ,8iｯｯa ２ 0eｯ ４ ,NdCrｯ ３ ,LiMn6O ４ ,0eｰO ４ ,ｭgCrｯ ４ C / OBaｮiO ３ ,, ３ NaCr ２ 9 ８ ,Baｮiｯ ３ ,bbiCrｯ ４ ,i ２ 79 ４ ,i ２ 7.9 ２ ,NaCaa6O ４ ,i ２ 9iｯ ２ ,KAl(MoO ４ ) ) ２ ,PrCrｯ ３ , 3r 2gｯ ４ ,79 ３ ,63rｯ ４ ,NaVCd ４ ,TiPbO ３ ,dCoO ３ ,8a ２ 39 ３ ,1a ２ PbO ４ ,3b ２ PbO ６ ,8aｭnｯ ２ ,hｦ ３ ,8a ２ 39 ３ ,｡l ２ PbO ４ ,8a ２ Ptｯ ２ ,Baarr(0eｯ ２ ) ) ４ ,69.9 ４ ,, ３ Naa(ｳO ４ ) ) ２ ,3m3oO ３ ,Tl｢r,ii99 ３ ,KAs ４ 3rｯ ６ ,KAs ４ 99 ６ I ４ ) ) ２ ,7g ３ ｳi ２ 8 ４ 9 ９ ,71(89) ２ ,1189 ２ ,Zrｰ ２ (89) ３ ) ) ２ ,3r29 ２ ,79 ２ ,i ８ 3oO ６ ,, ２ PdF ４ ,i ８ eeｯ ６ ,i ８ 3iｯ ６ ,i ３ rOBaeeeｨ ９ ,CsAl(MoO ４ ) ) ２ , 3s ２ PdC ２ , 3s ２ PtC ２ ,71635 ４ ,8iO ２ ,BaCO ３ ,lPO ４ ,bbee9O ６ ,gO,KｮiI ６ ,3o3eO ４ ,Laeeｯ ３ ,CsCu ３ 9 ２ ,, ２ Al ２ ｳb ２ 9 ７ ,8a ５ MooO ４ ,i ２ 7N ２ 9iｯ ６ ,LiCaCoｦ ６ ,3iｯ ２ Mnnee ４ ,KｮaｳO ４ ,3iｯ ２ ,KAs ４ 3ｯ ６ ,2b ２ Al ２ ｳb ２ 9 ７ ,LiCaarrｦ ６ ,i ２ 39 ４ ,KｮaｳO ４ ,)AlｳiO ４ ,3iｯ ２ ,ｳcF ３ ,｡l ２ 9 ３ ,Fe｢iｯ ３ ,｡l ２ b. ４ Mg｡l ２ 9 ４ ,L)CoO ２ ,LaｹaｯO ３ ,3i(8i) ２ ) ) ２ ,7g ２ 3iｯ ４ ,7oｳ ２ ,0eCuO ２ ,ｭoee ２ ,3r ３ (0) ４ ) ) ２ ,, ２ 3,000 ２ ,, ２ 7.00 ６ ,lPO ４ ,iMgVO ４ ,aaggｦ ３ Baｺrr( ４ ) ) ２ ,3aCO ３ ,8a ４ 3oAuO ５ ,1dBO ３ ,i ４ Ca ３ (3iｮ ３ ) ) ２ ,0eｰ ４ ,LiB ６ 3,0eｰ ４ ,1a ２ OssKBrr,1 ２ ,Zrｰ ２ (89) ３ ) ) ２ ,Ba ３ (8) ６ 9r) ２ ,Ba ２ 7gｨ ６ ,112 ３ 80 ３ ,3r ２ 7gｨ ６ ,38,442 ８ (80) ３ ) ) ２ ,2b ２ 3,ｭgooｮ ２ ,8aCoO ２ ,989 ３ ,3iｯ ２ ,, ４ ｨf ５ 9 １２ ,, ２ PtC ２ ,BPBa｡ll ２ (3i) ４ ) ) ２ ,Ca ２ 3iｯ ４ ,, ２ g ２ ｳi ２ O ７ , Li １４ P ２ (N ２ O) ３ , Li ２ PNO ２ , LiGhe ２ N ３ ,K ２ P$C ２ ,GeO ２ ,Na ２ TcF ６ ,Mg (Bc) ２ ,KCrO ２ , ScAlCO, K ２ TcF ６ ,Cssde(ｭot ４ ) ２ ,LaGaO ３ ,VO ２ ,Zn ２ PN ３ ,AllF ３ ,Sr ３ That ２ ZnO ９ ,Sr ３ Mậẹẹẹ ２ O ９ ,MgvCuO ４ ,Rb ３ Lu (P) ４ ) ２ ,Rb ３ Er(PO ４ ) ２ ,Ca･ ２ F ４ ,Baa｣o ２ (PO ４ ) ２ , Li ２ H ６ PtO ６ , Larrten ６ ,YC2D%O ６ ,TbCrTbO ６ ,DyCrTyO ６ ,Horrtet ６ ,YbH ３ CN ３ ,ErCrTeO ６ ,Tmạ ６ ,SmCrTet ６ ,FeF ３ ,GhdCrTheO ６ , NdCrTeO ６ , PrCrTeO ６ , B ６ O, MoS ２ , W.S. ２ 3. The double-layered film of claim 2, comprising at least one material selected from the group consisting of a magnetic material and an insulator.

6. The compound is TiO ２ , AlN, GaN, Be ２ C, Li ２ O, ZnO, BeO, KMgF ３ , KTaO ３ , BaAl ２ O ４ , K ２ TIF ６ , NaTaO ３ , Li ２ SiO ３ , SrTiO ３ , LaAlO ３ , BaTiO ３ , KZnF ３ , CsCu ３ S ２ , K ２ GeF ６ , K ２ PDF ６ , Al ２ O ３ , FeBiO ３ , Al ２ ZnO ４ , MgAl ２ O ４ , SiC, RbMgF ３ , K ２ CO ３ , K ２ SiF ６ , Li ２ GeO ３ , SrMnO ３ ,CoO,BaNiO ３ , Na ２ CO ３ , NaMnO ２ , Al ２ PbO ４ , Li ８ GeO ６ , K ２ MnF ６ , KNbO ３ , Na ２ TcF ６ 3. The double-layered film of claim 2, comprising at least one material selected from the group consisting of a magnetic material and an insulator.

7. A tunnel magnetoresistance element comprising a double-layered film of a magnetic material and an insulator as claimed in claim 3, and a second antiferromagnetic film layer laminated on the insulator of the double-layered film.

8. A tunnel magnetoresistance element comprising a double-layered film of a magnetic material and an insulator as claimed in claim 4, and a second antiferromagnetic film layer laminated on the insulator of the double-layered film.

9. A magnetic memory comprising a plurality of tunnel magnetoresistance elements according to claim 7.

10. A magnetic memory comprising a plurality of tunnel magnetoresistance elements according to claim 8.

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