Organic silicon composite structure, preparation method, and microfluidic channel structure of organic silicon composite structure

Abstract

The present invention provides an organic silicon composite structure, a preparation method, and a microfluidic channel structure of the organic silicon composite structure. The organic silicon composite structure comprises a non-silicon substrate layer, an intermediate layer, and an organic silicon layer; two surfaces of the intermediate layer are respectively bonded with the non-silicon substrate layer and the organic silicon layer; and the intermediate layer is an inorganic silicon layer. The intermediate layer is respectively bonded with the non-silicon substrate layer and the organic silicon layer, so that bonding between the non-silicon substrate layer and the organic silicon layer is achieved; moreover, due to a high-temperature organic reagent being not used to soak the non-silicon substrate layer during bonding, the material mechanical properties and the stability of the surface properties of the non-silicon substrate layer are kept, and the added intermediate layer basically does not affect the material mechanical properties of a substrate. An apparatus used during manufacturing is a common apparatus in a clean room for producing a semiconductor device, the operation is simple and direct, and the success rate is high.

Description

An organic silicon composite structure, preparation method and microfluidic channel structure thereof Technical Field

[0001] The present invention relates to the field of microfluidic chip manufacturing, and in particular to an organic silicon composite structure, a preparation method and a microchannel structure thereof. Background Art

[0002] Silicone materials, represented by polydimethylsiloxane (PDMS), are widely used in microfluidic chip manufacturing and flexible device fields. Silicone films have good bonding strength with silicon substrates (such as glass, silicon wafers, and silicon dioxide). After plasma treatment or chemical treatment, hot pressing and other methods can form Si-O-Si chemical bonds between the silicone film and the silicon substrate, thereby forming a reliable bond between the film and the substrate. However, silicone films and non-silicon polymer substrates [such as polyimide (PI), polymethyl methacrylate (PMMA), and polycarbonate (PC)] are difficult to bond, which limits the application of silicone films in microfluidics and flexible devices.

[0003] In the prior art, in order to solve the bonding problem between an organosilicon film and a non-silicon polymer substrate, the non-silicon substrate is usually first treated with oxygen plasma hydrophilicity, then immersed in an organic reagent containing a C-NH2 bond [such as 3-aminopropyltriethoxysilane (APTES)] and heated. Finally, both the non-silicon substrate and the organosilicon film are treated with oxygen plasma, and then hot-pressed at high temperature for bonding.

[0004] The organic reagent containing C-NH2 bonds is toxic and volatile. Moreover, immersing the non-silicon substrate in the high-temperature organic reagent is likely to affect the mechanical properties of the non-silicon substrate and the stability of the surface of the material.

[0005] Summary of the Invention

[0006] The present application provides an organosilicon composite structure, a method for preparing the organosilicon composite structure, and a microfluidic structure thereof, in order to solve the technical problem in the prior art that, when bonding an organosilicon film and a non-silicon polymer substrate, toxic and volatile organic reagents are used, and when the non-silicon substrate is immersed in a high-temperature organic reagent for treatment, the material mechanical properties and surface property stability of the non-silicon substrate are affected.

[0007] According to the first aspect of the present application, a silicone composite structure is provided, comprising a non-silicone base layer, an intermediate layer and an silicone layer; the two surfaces of the intermediate layer are bonded to the non-silicone base layer and the silicone layer respectively; the intermediate layer comprises an inorganic silicone layer.

[0008] The inorganic silicon layer includes at least one of silicon dioxide, polysilicon and silicon nitride.

[0009] The thickness of the inorganic silicon layer is 20 nm-1 μm, for example, 40 nm, 60 nm, 80 nm, 100 nm, 120 nm, 140 nm, 160 nm, 180 nm, 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, etc.

[0010] The inorganic silicon layer is a two-layer, three-layer or multi-layer structure.

[0011] The middle layer further includes a PDMS layer bonded to the inorganic silicon layer.

[0012] The other surface of the PDMS layer is bonded to the organic silicon layer.

[0013] The organic silicon layer is a two-layer, three-layer or multi-layer structure.

[0014] The thickness of the PDMS layer is less than 10 μm, preferably greater than or equal to 5 μm, for example, 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, etc.

[0015] The non-silicon base layer 1 includes at least one of polyimide, polycarbonate, acrylic and negative photoresist.

[0016] According to the second aspect of the present application, a method for preparing any of the above-mentioned organic silicon composite structures is provided, wherein a non-silicone base layer is prepared, an intermediate layer is deposited on the surface of the non-silicone base layer, and the intermediate layer and the organic silicon layer are hot-pressed and bonded to form an organic silicon composite structure, wherein the intermediate layer includes an inorganic silicon layer.

[0017] Before coating the intermediate layer on the non-silicon base layer, the surface of the non-silicon base layer is treated with oxygen plasma until the surface of the non-silicon base layer becomes hydrophilic.

[0018] The method of depositing the intermediate layer is physical vapor deposition or chemical vapor deposition.

[0019] Among them, the physical vapor deposition method is magnetron sputtering physical vapor deposition method.

[0020] The intermediate layer further comprises a PDMS layer coated on the inorganic silicon layer.

[0021] Before the intermediate layer and the organic silicon layer are bonded and formed by thermal compression, the surfaces of the intermediate layer and the organic silicon layer are treated with oxygen plasma.

[0022] According to a third aspect of the present application, a microfluidic channel structure comprising any one of the above-mentioned organosilicon composite structures is provided, wherein the organosilicon layer is provided with a microfluidic channel.

[0023] According to a fourth aspect of the present invention, there is provided a microfluidic chip comprising any one of the above-mentioned organosilicon composite structures.

[0024] Compared with the prior art, this application has the following beneficial effects:

[0025] The present invention provides an organosilicon composite structure, a preparation method, and a microfluidic structure having the same. The organosilicon composite structure includes a non-silicon base layer, an intermediate layer, and an organosilicon layer; the two surfaces of the intermediate layer are bonded to the non-silicon base layer and the organosilicon layer respectively; and the intermediate layer is an inorganic silicon layer. The intermediate layer is bonded to the non-silicon base layer and the organosilicon layer respectively, thereby achieving bonding between the non-silicon base layer and the organosilicon layer, thereby avoiding the use of toxic and volatile organic reagents, and at the same time, obtaining reliable bonding strength between the organosilicon and the substrate; further, since the bonding process does not use the high-temperature organic reagents mentioned above to soak the non-silicon base layer, the stability of the material mechanical properties and surface properties of the non-silicon base layer is maintained, and the added intermediate layer basically does not affect the material mechanical properties of the substrate; and the equipment used in the production process are all commonly used equipment in the clean room of semiconductor device production, and the operation is simple and direct, with a high success rate. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the specific implementation methods of the present application or the technical solutions in the prior art, the following is a brief introduction to the drawings required for use in the specific implementation methods or the description of the prior art. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0027] FIG1 is one of the schematic diagrams of the organosilicon composite structure provided in this application;

[0028] FIG2 is a second schematic diagram of the organosilicon composite structure provided by this application;

[0029] FIG3 is a flow chart of the preparation of the microfluidic channel structure provided by the present application;

[0030] FIG4 is a schematic structural diagram of the microfluidic channel structure provided in this application.

[0031] Description of reference numerals:

[0032] 1. Non-silicone base layer; 2. Inorganic silicon layer; 3. PDMS layer; 4. Organic silicon layer; 5. Microfluidic channel. DETAILED DESCRIPTION

[0033] In order to make the above and other features and advantages of the present application more clear, the present application is further described below with reference to the accompanying drawings. It should be understood that the specific embodiments given herein are for the purpose of explaining to those skilled in the art and are only exemplary and not restrictive.

[0034] In the following description, many specific details are set forth to provide a thorough understanding of the present application. However, it will be apparent to those skilled in the art that it is not necessary to adopt the specific details to practice the present application. In other cases, well-known steps or operations are not described in detail to avoid obscuring the present application.

[0035] In the existing technology, when bonding silicone films and non-silicon polymer substrates, it is necessary to use toxic and volatile high-temperature organic reagents to soak the non-silicon polymer substrate, which can easily affect the material mechanical properties and surface stability of the non-silicon substrate.

[0036] Referring to Figure 1, the present application provides an organic silicon composite structure, including a non-silicone base layer 1, an intermediate layer and an organic silicon layer 4; the two surfaces of the intermediate layer are bonded to the non-silicone base layer 1 and the organic silicon layer 4 respectively; the intermediate layer is an inorganic silicon layer 2.

[0037] The intermediate layer is bonded to the non-silicone base layer 1 and the organic silicon layer 4 respectively, thereby achieving bonding between the non-silicone base layer 1 and the organic silicon layer 4, thereby avoiding the use of toxic and volatile organic reagents, and at the same time obtaining reliable bonding strength between the organic silicon and the substrate; furthermore, since the bonding process does not use the above-mentioned high-temperature organic reagent to soak the non-silicone base layer 1, the stability of the material mechanical properties and surface properties of the non-silicone base layer 1 is maintained, and the added intermediate layer basically does not affect the material mechanical properties of the substrate.

[0038] In some embodiments, the inorganic silicon layer 2 includes at least one of silicon dioxide, polysilicon, and silicon nitride.

[0039] In some embodiments, the inorganic silicon layer has a two-layer, three-layer or multi-layer structure, wherein the multi-layer inorganic silicon layer structure of two or more layers can be preferably obtained by chemical or physical deposition methods, by depositing and stacking layer by layer.

[0040] It should be understood that when the inorganic silicon layer 2 is a single layer, its material can be any one of silicon dioxide, polysilicon and silicon nitride; when the inorganic silicon layer 2 is two or more layers, the inorganic silicon layers can all use the same material or different materials.

[0041] In some embodiments, the thickness of the inorganic silicon layer 2 is 20nm-1μm; for example, it can be 40nm, 60nm, 80nm, 100nm, 120nm, 140nm, 160nm, 180nm, 200nm, 300nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm, etc.; it can be understood that the thickness of the inorganic silicon layer 2 is not limited to multiples of 20nm, and different coating parameters can be set according to the MEMS process within the aforementioned range of 20nm-1μm to obtain an inorganic silicon layer of corresponding thickness.

[0042] 2 , in some embodiments, two surfaces of the inorganic silicon layer 2 are bonded to the non-silicon base layer 1 and the PDMS layer 3 , respectively, and the PDMS layer 3 is bonded to the organic silicon layer 4 .

[0043] In this embodiment, the intermediate layer includes an inorganic silicon layer 2 and a PDMS layer 3. After the inorganic silicon layer 2 is combined with one surface of the PDMS layer 3, the other surface of the PDMS layer 3, as the other surface of the intermediate layer, is more easily combined with the organic silicon layer structure with a fine structure, thereby preventing the fine structure from being fragmented, and the bonding effect is better, which is conducive to the preparation of microchannel structures or microfluidic chips, etc.

[0044] In some embodiments, the thickness of the PDMS layer 3 is less than 10 μm; preferably, it is greater than or equal to 5 μm, for example, it can be 5 μm, 6 μm, 7 μm, 8 μm, 9 μm, etc.

[0045] The thickness of the PDMS layer 3 is set to be much greater than the thickness of the inorganic silicon layer 2, so as to facilitate bonding between the non-silicone base layer 1 and the organic silicon film and maintain the material mechanical properties of the PDMS layer 3. It should be noted that in this application, the thickness of the PDMS layer 3 is between 5 and 10 microns, and the thickness of the inorganic silicon layer 2 is between 20 nm and 1 micron. When the thickness of the PDMS layer 3 is 5 microns and the thickness of the inorganic silicon layer 2 is 1 micron, the minimum ratio is 5. That is, when the ratio of the thickness of the PDMS layer 3 to the thickness of the inorganic silicon layer 2 is greater than 5, it should be understood that the thickness of the PDMS layer 3 is much greater than the thickness of the inorganic silicon layer 2.

[0046] In some embodiments, the ratio of the matrix to the hardener for preparing the PDMS layer 3 is 5:1 to 30:1, so as to maintain the material mechanical properties of the PDMS layer 3 .

[0047] In some embodiments, the organic silicon layer 4 is a two-layer, three-layer or multi-layer structure.

[0048] In some embodiments, the non-silicon base layer 1 includes at least one of polyimide, polycarbonate, acrylic, and negative photoresist.

[0049] The present application provides a method for preparing an organosilicon composite structure, which comprises preparing a non-silicone base layer 1, depositing an intermediate layer 2 on the surface of the non-silicone base layer 1, and hot-pressing bonding the intermediate layer 2 and the organosilicon layer 4 to obtain an organosilicon composite structure.

[0050] In some embodiments, before depositing the intermediate layer 2 on the non-silicon base layer 1, the surface of the non-silicon base layer is treated with oxygen plasma until the surface of the non-silicon base layer 1 becomes hydrophilic, so as to facilitate bonding between the non-silicon base layer 1 and the intermediate layer 2.

[0051] The method for depositing the intermediate layer is physical vapor deposition or chemical vapor deposition. The physical vapor deposition method can be magnetron sputtering physical vapor deposition.

[0052] Furthermore, in order to facilitate thermocompression bonding between the intermediate layer 2 and the organosilicon layer 4 , oxygen plasma may also be used to treat the surfaces of the intermediate layer and the organosilicon layer before bonding and molding.

[0053] In some embodiments, after depositing the intermediate layer 2 on the surface of the non-silicone base layer 1, a PDMS film 3 is coated on the intermediate layer 2, and the PDMS film 3 and the organosilicon layer 4 are bonded by heat pressing to obtain an organosilicon composite structure.

[0054] Those skilled in the art will appreciate that the various technical features described above may be combined arbitrarily. Although not all possible combinations of these technical features are described, any combination of these technical features should be considered to be covered by this specification, as long as such combination does not conflict.

[0055] In order to facilitate understanding of the concept of this application, the following is an explanation with reference to specific embodiments:

[0056] Among them, the oxygen plasma treatment equipment uses a plasma cleaner or a reactive ion etcher, the deposition equipment uses a magnetron sputtering physical vapor deposition furnace, and the other equipment are also commonly used equipment in the clean room of semiconductor device production.

[0057] Example 1,

[0058] In step a, the surface of the polycarbonate (PC) substrate is subjected to oxygen plasma treatment to make the surface of the polycarbonate substrate hydrophilic, thereby obtaining a non-silicon base layer 1 .

[0059] Step b: depositing a 20 nm thick layer of silicon dioxide on the surface of the non-silicon base layer 1 that has been treated with oxygen plasma to obtain an inorganic silicon layer 2.

[0060] Step c: treating the surface of the inorganic silicon layer 2 with oxygen plasma to make the surface of the inorganic silicon layer 2 hydrophilic.

[0061] In step d, the pre-prepared organic silicon film and the inorganic silicon layer 2 are both subjected to oxygen plasma treatment, and then the two layers are quickly buckled together and hot-pressed to form an organic silicon composite structure. The structure after forming is shown in FIG1 .

[0062] Example 2

[0063] Step a: treating the surface of the negative photoresist SU8 substrate with oxygen plasma to make the surface of the negative photoresist substrate hydrophilic, thereby obtaining a non-silicon base layer 1.

[0064] In step b, a 20 nm thick silicon dioxide layer, a 40 nm thick polysilicon layer and an 80 nm thick silicon nitride layer are sequentially deposited on the surface of the non-silicon base layer 1 that has been treated with oxygen plasma to obtain an inorganic silicon layer 2.

[0065] Step c: treating the surface of the inorganic silicon layer 2 with oxygen plasma to make the surface of the inorganic silicon layer 2 hydrophilic.

[0066] In step d, the pre-prepared organic silicon film and the inorganic silicon layer 2 are both subjected to oxygen plasma treatment, and then the two layers are quickly buckled together and heat-pressed to form a composite organic silicon structure.

[0067] Example 3

[0068] Referring to FIG. 2 , in step a, the surface of the acrylic PMMA substrate is treated with oxygen plasma to make the surface of the acrylic substrate hydrophilic, thereby obtaining a non-silicon base layer 1 .

[0069] Step b: depositing a 20 nm thick layer of polysilicon and a 40 nm thick layer of silicon nitride on the surface of the non-silicon base layer 1 that has been treated with oxygen plasma to obtain an inorganic silicon layer 2.

[0070] Step c: treating the surface of the inorganic silicon layer 2 with oxygen plasma to make the surface of the inorganic silicon layer 2 hydrophilic.

[0071] Step d: spin-coating a 10 μm thick polydimethylsiloxane (PDMS) layer 3 on the inorganic silicon layer 2 that has been treated with oxygen plasma, wherein the ratio of the matrix to the hardener of the PDMS layer 3 is 10:1.

[0072] In step e, the pre-prepared organic silicon film and the PDMS layer 3 are both subjected to oxygen plasma treatment, and then the two layers are quickly buckled together and heat-pressed to form an organic silicon composite structure.

[0073] Example 4

[0074] See Figures 3 and 4, S1. A thermosetting polyimide (PI) liquid (PI 2611, HD Microsystems) was dripped onto a 3cm*3cm glass slide and spin-coated at 1000 rpm / min for 1 minute using a spin coater. The slide was then placed on a hot plate for curing. The hot plate was programmed to bake at 90°C for 2 minutes, then raised to 300°C for 10 minutes, then slowly cooled to 90°C. The hot plate was then set to cool at 1°C / min to 30°C. The glass slide was then removed from the hot plate to obtain the PI substrate (i.e., non-silicone substrate layer 1).

[0075] S2. The PI substrate was placed in a reactive ion etcher (Oxford Instruments) and treated with oxygen plasma using the following parameters: pressure 80 mtorr, oxygen flow rate 20 sccm, power 80 W, and treatment time 90 s. The PI substrate was then suspended upside down in a magnetic sputtering coater (Semicore), where a 20 nm thick silicon dioxide layer was deposited on the surface of the PI substrate.

[0076] S3. Remove the PI substrate and place it back into the reactive ion etcher for oxygen plasma treatment using the following parameters: pressure 80 mtorr, oxygen flow rate 20 sccm, power 60 W, and treatment time 60 s. PDMS is then dropwise spin-coated onto the substrate surface at 5000 rpm for 1 minute. The substrate is then heated to 80°C on a hot plate for 2 minutes to form a 5 μm thick PDMS layer. After cooling naturally, the substrate is removed, completing the PI layer treatment.

[0077] S4. Fabrication of the silicone membrane: A 3cm*3cm silicon wafer patterned with microfluidic channels 5 is silanized using FOTS (Sigma) to render the wafer surface hydrophobic. A PDMS (DOW) matrix and a hardener are then mixed in a 10:1 ratio and vacuumed to produce a bubble-free mixture. PDMS is then dropwise spin-coated onto the surface of the silicon wafer patterned with microfluidic channels 5 at 1000 rpm for 1 minute. The membrane is then heated on a hot plate at 120°C for 5 minutes. After cooling naturally, the silicone membrane patterned with microfluidic channels 5 is removed and set aside. This step is not preceded by step S1.

[0078] S5. Place both the PI substrate and the silicone membrane in a reactive ion etcher and treat with oxygen plasma using the following parameters: pressure 700 mtorr, oxygen flow rate 45 sccm, power 60 W, and treatment time 20 seconds. After treatment, the two layers are bonded and quickly pressed in a hot press (Microtech) for 30 seconds at 1 MPa and 65°C. After allowing the membrane to cool to room temperature, it is removed from the glass slide, resulting in the PI-PDMS composite microfluidic structure, as shown in Figure 4.

[0079] To further verify the pressure-bearing capacity of the PI-PDMS composite microfluidic channel structure produced by the above method, this application also conducted a pressure test on the five layers of the microchannel. Specifically, the end of the microchannel was punched, and a section of tubing was connected using the epoxy UV adhesive Hollo 6684 (Panacol). The other end of the tubing was connected to a microfluidic pressure control system (Fluigent) at a pressure of 10kPa-120kPa. The pressure was set to observe whether any structural delamination or cracking occurred. The results showed that at 120kPa, the bond strength between the PI layer and the silicone membrane was still good.

[0080] It should be noted that the specific numerical values ​​in the above embodiments should not be understood as limiting the present application. It should be understood that modifications made by those skilled in the art to the specific numerical values ​​in the above embodiments in accordance with the concept of the present application should also be within the scope of the technical solution of the present application. For example, in Example 1, those skilled in the art replace the inorganic silicon layer of silicon dioxide with an inorganic silicon layer of polysilicon or silicon nitride, or change the inorganic silicon layer of silicon dioxide to 40nm, 60nm, 80nm, 100nm, 120nm, 140nm, 160nm, 180nm, 200nm, 300nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm and 1μm, etc., which should all be within the scope of the technical solution of the present application; for example, in Example 2, those skilled in the art replace the inorganic silicon layer composed of silicon dioxide, polysilicon and silicon nitride with an inorganic silicon layer composed of silicon dioxide and polysilicon, or replace it with an inorganic silicon layer composed of silicon dioxide and silicon nitride, or replace it with an inorganic silicon layer composed of silicon dioxide and silicon nitride. Replacing the inorganic silicon layer with one composed of polycrystalline silicon and silicon nitride, as well as adaptive adjustment of the size of each inorganic silicon layer should also be within the scope of the technical solution of the present application; for example, in Example 3, a technician in this field replaced the inorganic silicon layer composed of polycrystalline silicon and silicon nitride with an inorganic silicon layer composed of silicon dioxide and polycrystalline silicon, or replaced it with an inorganic silicon layer composed of silicon dioxide and silicon nitride, or replaced it with an inorganic silicon layer composed of silicon dioxide, polycrystalline silicon and silicon nitride. In addition, the adjustment of the size of each inorganic silicon layer and the size of the PDMS layer should also be within the scope of the technical solution of the present application, wherein the size of the PDMS layer can be adjusted to 5μm, 6μm, 7μm, 8μm, 9μm and 10μm, etc., to ensure that the size of the PDMS layer is much larger than the size of the inorganic silicon layer.

[0081] Finally, it should be understood that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. An organosilicon composite structure, characterized in that: It comprises a non-silicon base layer (1), an intermediate layer and an organic silicon layer (4); the two surfaces of the intermediate layer are bonded to the non-silicon base layer (1) and the organic silicon layer (4) respectively; and the intermediate layer comprises an inorganic silicon layer (2).

2. The organic silicon composite structure according to claim 1, characterized in that: The inorganic silicon layer (2) comprises at least one of silicon dioxide, polysilicon and silicon nitride.

3. The organic silicon composite structure according to claim 1, characterized in that: The thickness of the inorganic silicon layer (2) is 20 nm-1 μm.

4. The organic silicon composite structure according to claim 1, characterized in that: The inorganic silicon layer is a two-layer, three-layer or multi-layer structure.

5. The organic silicon composite structure according to claim 1, characterized in that: The intermediate layer further comprises a PDMS layer (3) bonded to the inorganic silicon layer (2).

6. The organosilicon composite according to claim 5, characterized in that: The other surface of the PDMS layer (3) is bonded to the organic silicon layer (4).

7. The organosilicon composite according to claim 1 or 6, characterized in that: The organic silicon layer (4) is a two-layer, three-layer or multi-layer structure.

8. The organic silicon composite structure according to claim 5 or 6, characterized in that: The thickness of the PDMS layer (3) is less than 10 μm.

9. The organic silicon composite structure according to claim 1, characterized in that: The non-silicon base layer (1) comprises at least one of polyimide, polycarbonate, acrylic and negative photoresist.

10. A method for preparing an organosilicon composite structure according to any one of claims 1 to 9, characterized in that: A non-silicon base layer is prepared, an intermediate layer is deposited on the surface of the non-silicon base layer, and the intermediate layer and the organic silicon layer are bonded by heat pressing to obtain the organic silicon composite structure, wherein the intermediate layer includes an inorganic silicon layer.

11. The method for preparing an organosilicon composite structure according to claim 10, characterized in that: Before depositing the intermediate layer on the non-silicon base layer, the surface of the non-silicon base layer is treated with oxygen plasma until the surface of the non-silicon base layer becomes hydrophilic.

12. The method for preparing an organosilicon composite structure according to claim 10, characterized in that: The method of depositing the intermediate layer is physical vapor deposition or chemical vapor deposition.

13. The method for preparing an organosilicon composite structure according to claim 12, characterized in that: The physical vapor deposition method is a magnetron sputtering physical vapor deposition method.

14. The method for preparing an organosilicon composite structure according to claim 10, characterized in that: The intermediate layer further comprises a PDMS layer coated on the inorganic silicon layer.

15. The method for preparing an organosilicon composite structure according to claim 10, characterized in that: Before the intermediate layer and the organic silicon layer are formed by thermal compression bonding, the surfaces of the intermediate layer and the organic silicon layer are treated with oxygen plasma.

16. A microfluidic channel structure comprising the organic silicon composite structure according to any one of claims 1 to 9, characterized in that: The organic silicon layer is provided with a micro-channel.

17. A microfluidic chip, characterized in that: The invention comprises the organic silicon composite structure as claimed in any one of claims 1 to 9.

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