Display panel and display apparatus

Abstract

The present disclosure belongs to the technical field of display. Disclosed are a display panel and a display apparatus. The display panel comprises a driving backplane, a pixel electrode layer, a light-emitting functional layer and a common electrode layer, which are sequentially arranged in a stacked manner, wherein the light-emitting functional layer has common material layers, which cover gaps between a plurality of light-emitting elements; and at least one of the common material layers contains a hole-transport-type nitrogen-containing compound, and the hole-transport-type nitrogen-containing compound has relatively high transverse resistance after becoming a film. The display panel can reduce the crosstalk between light-emitting elements. (FIG. 2)

Description

Display panel and display device

[0001] Cross-references

[0002] This disclosure claims priority to Chinese patent application number 202310787250.3, filed on June 29, 2023, entitled “Display Panel and Display Device,” and the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present disclosure relates to the field of display technology, and in particular to a display panel and a display device. Background Art

[0004] Self-luminous display technologies such as OLED (organic light-emitting diodes) and QLED (quantum dot light-emitting diodes) offer advantages such as wide color gamut, fast response time, wide viewing angle, and foldability, and are being adopted in an increasing number of display products. However, in some display products, different sub-pixels share a common material layer, which makes crosstalk between them more likely.

[0005] It should be noted that the information disclosed in the above background technology section is only used to enhance the understanding of the background of the present disclosure, and therefore may include information that does not constitute prior art known to ordinary technicians in the field.

[0006] Summary of the Invention

[0007] The purpose of the present disclosure is to overcome the above-mentioned deficiencies of the prior art and provide a display panel and a display device to reduce crosstalk between light-emitting elements.

[0008] According to one aspect of the present disclosure, a display panel is provided, comprising a driving backplane, a pixel electrode layer, a light-emitting functional layer, and a common electrode layer stacked in sequence; the light-emitting functional layer comprises a common material layer, which covers the gaps between a plurality of light-emitting elements; at least one of the common material layers comprises a hole-transporting nitrogen-containing compound, the structural formula of the hole-transporting nitrogen-containing compound being as shown in Chemical Formula 1:

[0009] wherein L1, L2, and L3 are each independently selected from the group consisting of a single bond, a substituted or unsubstituted phenylene group, a substituted or unsubstituted biphenylene group, a substituted or unsubstituted naphthylene group, a substituted or unsubstituted phenanthrenyl group, a substituted or unsubstituted triphenylene group, a substituted or unsubstituted 9,9'-dimethylfluorenylene group, a substituted or unsubstituted 9,9'-diphenylfluorenylene group, a substituted or unsubstituted spirofluorenylene group, and a substituted or unsubstituted carbazolylene group;

[0010] Ar1 to Ar3 are each independently selected from: a substituted or unsubstituted aryl group having 6 to 50 ring carbon atoms, a substituted or unsubstituted heteroaryl group having 5 to 40 ring carbon atoms, and -N(Ar4Ar5); Ar4 and Ar5 are each independently selected from: a substituted or unsubstituted aryl group having 6 to 50 ring carbon atoms, a substituted or unsubstituted heteroaryl group having 5 to 40 ring carbon atoms; wherein at least one of Ar1 to Ar3 has a benzopentacyclic ring fragment or a dithiophene fragment;

[0011] When L1, L2, L3, Ar1, Ar2, Ar3, Ar4 or Ar5 has a substituent, the substituent is selected from deuterium, halogen, substituted or unsubstituted alkyl having 1 to 10 carbon atoms, substituted or unsubstituted cycloalkyl having 5 to 10 carbon atoms, substituted or unsubstituted aryl having 6 to 30 carbon atoms, and substituted or unsubstituted heteroaryl having 5 to 30 carbon atoms.

[0012] According to one embodiment of the present disclosure, at least one of Ar1 to Ar3 has a group represented by the following Chemical Formula 2 or Chemical Formula 3:

[0013] Among them, * indicates connection to L1, L2, L3 or N;

[0014] L4 and L5 are each independently selected from the group consisting of a single bond, a substituted or unsubstituted phenylene group, a substituted or unsubstituted biphenylene group, a substituted or unsubstituted naphthylene group, a substituted or unsubstituted phenanthrenyl group, a substituted or unsubstituted triphenylene group, a substituted or unsubstituted 9,9'-dimethylfluorenylene group, a substituted or unsubstituted 9,9'-diphenylfluorenylene group, a substituted or unsubstituted spirofluorenylene group, and a substituted or unsubstituted carbazolylene group;

[0015] X is selected from N(R2), C(R3R4), O, S, Si(R3R4); m is 0, 1 or 2;

[0016] R1 is selected from the group consisting of deuterium, halogen, substituted or unsubstituted alkyl having 1 to 10 carbon atoms, substituted or unsubstituted cycloalkyl having 5 to 10 carbon atoms, substituted or unsubstituted aryl having 6 to 30 carbon atoms, and substituted or unsubstituted heteroaryl having 5 to 30 carbon atoms;

[0017] R2 to R4 are each independently selected from a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted cycloalkyl group having 5 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 5 to 30 carbon atoms;

[0018] When the number of R1 is two, the two R1 can also be connected to form an aromatic ring or an aliphatic ring;

[0019] R3 and R4 can also be connected to form an aromatic ring or an aliphatic ring.

[0020] According to one embodiment of the present disclosure, L1, L2 and L3 are each independently selected from a single bond, a phenylene group, a biphenylene group, a terphenylene group, a naphthylene group, and a trimphenylene group;

[0021] The Ar1 to Ar5 are each independently selected from 9,9'-dimethylfluorenyl, spirofluorenyl, benzothiophenyl, N-phenylcarbazolyl, phenyl, biphenyl, 9-phenyl-1,2,3,4-tetrahydrocarbazolyl, phenyl-substituted thieno[3,2-b]thiophenyl, thieno[3,2-b]thiophenyl, naphthyl, 9,9'-diphenylfluorenyl, dibenzofuranyl, and dibenzothiophenyl; and at least one of Ar1 to Ar3 contains a phenyl-substituted thieno[3,2-b]thiophenyl or thieno[3,2-b]thiophenyl.

[0022] According to one embodiment of the present disclosure, the hole transport nitrogen-containing compound is selected from the group consisting of the following compounds:

[0023] According to one embodiment of the present disclosure, the light-emitting functional layer includes a hole injection material layer; the hole injection material layer covers the gaps between the plurality of light-emitting elements and contains the hole-transporting nitrogen-containing compound.

[0024] According to one embodiment of the present disclosure, the hole injection material layer is made of the hole transport nitrogen-containing compound and a P-type dopant, and the mass content of the P-type dopant does not exceed 3%.

[0025] According to one embodiment of the present disclosure, the hole injection material layer is made of the hole transport nitrogen-containing compound and a P-type dopant, and the mass content of the P-type dopant is between 0.5% and 1.5%.

[0026] According to one embodiment of the present disclosure, the light-emitting functional layer includes a P-type charge generation material layer, which covers the gaps between the plurality of light-emitting elements and contains the hole-transporting nitrogen-containing compound.

[0027] According to one embodiment of the present disclosure, the material of the P-type charge generation material layer is composed of the hole transport nitrogen-containing compound and a P-type dopant, and the mass content of the P-type dopant is not less than 10%.

[0028] According to one embodiment of the present disclosure, the material of the P-type charge generation material layer is composed of the hole transport type nitrogen-containing compound and a P-type dopant, and the mass content of the P-type dopant is between 10% and 15%.

[0029] According to one embodiment of the present disclosure, the light-emitting functional layer includes an N-type charge generation material layer, which covers the gaps between the multiple light-emitting elements; the material of the N-type charge generation material layer is composed of an electron transport compound and an N-type dopant; the electron transport compound contains a phenanthroline fragment or a phosphorus oxygen fragment.

[0030] According to an embodiment of the present disclosure, the display panel is provided with a partition structure between the light-emitting elements; and at least one layer of the common material layer is discontinuously provided at the partition structure.

[0031] According to an embodiment of the present disclosure, the display panel is provided with a pixel definition layer between the pixel electrode layer and the light-emitting function layer, and the partition structure is provided in the pixel definition layer.

[0032] According to one embodiment of the present disclosure, the light emitting element includes a red light emitting element, a green light emitting element and a blue light emitting element;

[0033] The partition structure is provided between the red light emitting element and the green light emitting element.

[0034] According to one embodiment of the present disclosure, the light-emitting functional layer includes a hole injection material layer covering the gaps between the plurality of light-emitting elements; the hole injection material layer is discontinuously arranged at the partition structure.

[0035] According to one embodiment of the present disclosure, the light-emitting functional layer includes a charge-generating material layer covering gaps between the plurality of light-emitting elements, and the charge-generating material layer is discontinuously disposed at the partition structure.

[0036] According to an embodiment of the present disclosure, the display panel further includes an auxiliary electrode layer disposed on a side of the common electrode layer away from the driving backplane, wherein the auxiliary electrode layer is electrically connected to the common electrode layer and does not overlap with the light-emitting element.

[0037] According to one embodiment of the present disclosure, the display panel is provided with an organic cover layer between the common electrode layer and the auxiliary electrode layer; the organic cover layer has a connection via hole exposing the common electrode layer, and the auxiliary electrode layer is electrically connected to the common electrode layer through the connection via hole.

[0038] According to another aspect of the present disclosure, a display device is provided, including the above-mentioned display panel.

[0039] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] The accompanying drawings are incorporated into and constitute a part of the specification, illustrate embodiments consistent with the present disclosure, and together with the specification, are used to explain the principles of the present disclosure. Obviously, the drawings described below are only some embodiments of the present disclosure, and those skilled in the art can derive other drawings based on these drawings without inventive effort.

[0041] FIG1 is a schematic structural diagram of a display panel in one embodiment of the present disclosure.

[0042] FIG2 is a schematic diagram of a partial structure of a pixel layer in one embodiment of the present disclosure.

[0043] FIG3 is a schematic diagram of a partial structure of a pixel layer in one embodiment of the present disclosure.

[0044] FIG4 is a schematic diagram of a partial structure of a display panel in one embodiment of the present disclosure.

[0045] FIG5 is a schematic diagram of a partial structure of a pixel layer in one embodiment of the present disclosure.

[0046] FIG6 is a schematic structural diagram of a light-emitting element in one embodiment of the present disclosure.

[0047] FIG7 is a schematic structural diagram of a light-emitting element in one embodiment of the present disclosure.

[0048] FIG8 is a schematic structural diagram of a light-emitting element in one embodiment of the present disclosure.

[0049] FIG9 is a schematic structural diagram of a light-emitting element in one embodiment of the present disclosure.

[0050] FIG10 is a schematic diagram of a partial structure of a pixel layer in one embodiment of the present disclosure.

[0051] FIG11 is a diagram showing the relationship between the mass content of the P-type dopant in the hole injection material layer and the lateral current of the hole injection material layer in one embodiment of the present disclosure.

[0052] FIG12 is a schematic structural diagram of a pixel definition layer provided with a partition structure in one embodiment of the present disclosure.

[0053] FIG13 is a schematic structural diagram of a partition structure separating a common material layer in one embodiment of the present disclosure.

[0054] FIG14 is a schematic structural diagram of a pixel definition layer provided with a partition structure in one embodiment of the present disclosure.

[0055] FIG15 is a schematic structural diagram of a partition structure separating a common material layer in one embodiment of the present disclosure.

[0056] FIG16 is a schematic structural diagram of an auxiliary electrode layer provided on a pixel layer in one embodiment of the present disclosure.

[0057] Explanation of reference numerals: AA, display area; AE, anode; BB, peripheral area; BEBL, electron blocking layer of blue light-emitting element; BEML, organic light-emitting layer of blue light-emitting element; B, blue light-emitting element; BP, substrate; Buff, inorganic buffer layer; CE, cathode; CFL, color filter layer; CGL, charge generation layer; CGLX, charge generation material layer; CML, organic cover layer; CNT, connection via; COML, common electrode layer; COMLX, auxiliary electrode layer; CVD1, first inorganic encapsulation layer; CVD2 , second inorganic encapsulation layer; DBP, driving backplane; DH, row direction; DRL, driving layer; DV, column square; DX, first direction; DY, second direction; EBL, electron blocking layer; EFL, light-emitting functional layer; EFU, light-emitting functional unit; EIL, electron injection layer; EILX, electron injection material layer; ELS, light-emitting stack structure; EML, organic light-emitting layer; ETL, electron transport layer; ETLX, electron transport material layer; GEBL, electron blocking layer of green light-emitting element; GEML, green Organic light-emitting layer of light-emitting element; GI, gate insulating layer; G, green light-emitting element; GT, gate layer; HBL, hole blocking layer; HBLX, hole blocking material layer; HIL, hole injection layer; HILX, hole injection material layer; HTL, hole transport layer; HTLX, hole transport material layer; IJP, organic encapsulation layer; ILD, interlayer dielectric layer; NCGL, N-type charge generation layer; NCGLX, N-type charge generation material layer; PCGL, P-type charge generation layer; PCGLX, P-type charge generation layer Raw material layer; PDL, pixel definition layer; PE, pixel electrode; PEL, pixel electrode layer; PIXL, pixel layer; PLN, planarization layer; PNL, display panel; PTS, partition structure; QDL, quantum dot layer; REBL, electron blocking layer of red light-emitting element; REML, organic light-emitting layer of red light-emitting element; R, red light-emitting element; SCL, semiconductor layer; SD, source and drain metal layer; TFE, thin film encapsulation layer; TFT, thin film transistor; TSL, touch function layer; LD, light-emitting element. DETAILED DESCRIPTION

[0058] Example embodiments will now be described more fully with reference to the accompanying drawings. However, the example embodiments can be implemented in many forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the concepts of the example embodiments to those skilled in the art. Like reference numerals in the figures represent identical or similar structures, and thus their detailed descriptions will be omitted. Furthermore, the figures are merely schematic illustrations of the present disclosure and are not necessarily drawn to scale.

[0059] Although relative terms such as "upper" and "lower" are used in this specification to describe the relationship of one illustrated component to another, these terms are used herein for convenience only, such as in accordance with the orientation of the illustrations in the accompanying drawings. It will be understood that if the illustrated device were flipped upside down, the component described as "upper" would become the component "lower." When a structure is referred to as "on" another structure, this may mean that the structure is integrally formed with the other structure, that the structure is "directly" disposed on the other structure, or that the structure is "indirectly" disposed on the other structure via the other structure.

[0060] The terms "a", "an", "the", "said" and "at least one" are used to indicate the presence of one or more elements / components / etc.; the terms "including" and "having" are used to express open-ended inclusion and mean that additional elements / components / etc. may be present in addition to the listed elements / components / etc.; the terms "first", "second" and "third" etc. are used only as labels and do not limit the quantity of their objects.

[0061] In an embodiment of the present disclosure, a display panel PNL is provided. Referring to FIG. 1 , the display panel PNL includes a display area AA and a peripheral area BB located on at least one side of the display area AA. For example, the peripheral area BB surrounds the display area AA. In the display area AA, the display panel PNL is provided with subpixels for display. In the peripheral area BB, the display panel PNL may not be provided with subpixels for display, or the provided subpixels may not be used for displaying images.

[0062] In an embodiment of the present disclosure, the sub-pixels in the display panel PNL are thin-film self-luminous light-emitting elements LD, such as OLED, PLED, QLED, etc. Furthermore, the light-emitting elements LD located in the display area AA include light-emitting elements LD of multiple different colors. For example, in the examples of Figures 2 and 3, the light-emitting elements LD include a red light-emitting element R for emitting red light, a blue light-emitting element B for emitting green light, and a green light-emitting element G for emitting green light. It is understandable that in other embodiments of the present disclosure, the light-emitting elements LD in the display area AA may also be light-emitting elements LD of only one color, or may also have light-emitting elements LD of other colors (for example, a yellow light-emitting element for emitting yellow light, a cyan light-emitting element for emitting cyan light, a white light-emitting element for emitting white light, etc.).

[0063] In one embodiment of the present disclosure, referring to FIG4 , the display panel PNL may include a driving backplane DBP and a pixel layer PIXL, which are stacked in sequence. The pixel layer PIXL includes light-emitting elements LD, and the driving backplane DBP is used to drive the light-emitting elements LD in the pixel layer PIXL. The driving backplane DBP may drive each light-emitting element LD using either an active or passive driving method.

[0064] In one embodiment of the present disclosure, referring to FIG4 , the driving backplane DBP includes a base substrate BP and a driving layer DRL disposed on one side of the base substrate BP; the pixel layer PIXL is disposed on the side of the driving layer DRL away from the base substrate BP. The driving layer DRL is provided with a pixel driving circuit for driving the light-emitting elements LD; each light-emitting element LD can emit light to display an image under the drive of the pixel driving circuit. Furthermore, the display panel PNL also includes a thin film encapsulation layer TFE located on the side of the pixel layer PIXL away from the driving backplane DBP. The thin film encapsulation layer TFE can encapsulate and protect the pixel layer PIXL.

[0065] Optionally, the substrate BP can be a substrate of an inorganic material, or a substrate of an organic material; of course, it can also be a composite substrate formed by stacking a substrate of an inorganic material and a substrate of an organic material. For example, in some embodiments of the present disclosure, the material of the substrate BP can be a glass material such as soda-lime glass, quartz glass, sapphire glass, etc. In some other embodiments of the present disclosure, the material of the substrate BP can be polymethyl methacrylate, polyvinyl alcohol, polyvinylphenol, polyethersulfone, polyimide, polyamide, polyacetal, polycarbonate, polyethylene terephthalate, polyethylene naphthalate, or a combination thereof. In some other embodiments of the present disclosure, the substrate BP can also be a flexible substrate, for example, the material of the substrate BP can include polyimide.

[0066] Optionally, in the drive layer DRL, any pixel drive circuit may include a thin film transistor (TFT) and a storage capacitor. Furthermore, the thin film transistor (TFT) may be selected from a top-gate thin film transistor, a bottom-gate thin film transistor, or a dual-gate thin film transistor; the material of the active layer of the thin film transistor may be an amorphous silicon semiconductor material, a low-temperature polysilicon semiconductor material, a metal oxide semiconductor material, an organic semiconductor material, a carbon nanotube semiconductor material, or other types of semiconductor materials; and the thin film transistor may be an N-type thin film transistor or a P-type thin film transistor.

[0067] It is understandable that, among the transistors in the pixel driving circuit, the types of any two transistors may be the same or different. For example, in some embodiments, in a pixel driving circuit, some transistors may be N-type transistors and some transistors may be P-type transistors. Again for example, in other embodiments, in a pixel driving circuit, the material of the active layer of some transistors may be a low-temperature polysilicon semiconductor material, and the material of the active layer of some transistors may be a metal oxide semiconductor material. In some embodiments of the present disclosure, the thin film transistors are low-temperature polysilicon transistors. In some other embodiments of the present disclosure, some thin film transistors are low-temperature polysilicon transistors, and some thin film transistors are metal oxide transistors.

[0068] Optionally, the driving layer DRL may include a semiconductor layer SCL, a gate insulating layer GI, a gate layer GT, an interlayer dielectric layer ILD, a source / drain metal layer SD, a planarization layer PLN, etc. stacked between the substrate BP and the pixel layer PIXL. Each thin film transistor and storage capacitor may be formed by film layers such as the semiconductor layer SCL, the gate insulating layer GI, the gate layer GT, the interlayer dielectric layer ILD, and the source / drain metal layer SD. The positional relationship of each film layer may be determined according to the film layer structure of the thin film transistor. Furthermore, the semiconductor layer SCL may be used to form the channel region of the transistor, and may also be formed into partial wiring or conductive structure by conductorization when necessary. The gate layer may be used to form one or more gate layer wirings such as scan wiring, reset control wiring, and light emission control wiring, may also be used to form the gate of a transistor, and may also be used to form part or all of the electrode plates of a storage capacitor. The source / drain metal layer may be used to form source / drain metal layer wirings such as data wiring and drive power supply voltage wiring, and may also be used to form part of the electrode plates of a storage capacitor. Of course, in other embodiments of the present disclosure, the driving layer DRL may further include other film layers as needed, for example, it may further include a light shielding layer located between the semiconductor layer SCL and the substrate BP. As needed, any of the above-mentioned film layers such as the semiconductor layer SCL, the gate layer GT, the source / drain metal layer SD, etc. may also be multi-layered. For example, the driving layer DRL may include two different semiconductor layers SCL, or two or three source / drain metal layers SD, or two or three gate layers GT. Accordingly, the insulating film layers in the driving layer DRL (such as the gate insulating layer GI, the interlayer dielectric layer ILD, the planarization layer PLN, etc.) may be adaptively increased or decreased, or new insulating film layers may be added as needed.

[0069] Optionally, the driving layer DRL may further include a passivation layer. The passivation layer may be provided on a surface of the source / drain metal layer SD away from the substrate BP so as to protect the source / drain metal layer SD.

[0070] As an example, referring to FIG4 , the driving layer DRL may include an inorganic buffer layer Buff, a semiconductor layer SCL, a gate insulating layer GI, a gate layer GT, an interlayer dielectric layer ILD, a source / drain metal layer SD, and a planarization layer PLN stacked in sequence, and the thin film transistor formed in this way is a top-gate thin film transistor.

[0071] It is understood that the above example of the driving backplane DBP is only one possible way of driving the backplane DBP in the embodiment of the present disclosure. In other embodiments of the present disclosure, the driving backplane DBP can also have other structures, for example, the driving backplane DBP can also be a passive driving glass substrate, a silicon-based driving substrate, etc.

[0072] Referring to Figures 4 and 5 , the light-emitting element LD in the pixel layer PIXL is a thin-film light-emitting element, which may include two stacked electrodes and a light-emitting functional unit (EFU) sandwiched between the two electrodes. For example, referring to Figure 4 , the pixel layer PIXL may include a pixel electrode layer PEL, a light-emitting functional layer (EFL), and a common electrode layer (COML) stacked in sequence. The pixel electrode layer PEL includes multiple pixel electrodes PE in the display area of ​​the display panel; the portion of the light-emitting functional layer (EFL) connected to the pixel electrodes PE serves as the light-emitting functional unit (EFU) of the light-emitting element LD; and the common electrode layer (COML) serves as a common electrode electrically connected to the light-emitting functional units (EFU) of each light-emitting element LD.

[0073] Furthermore, the pixel layer PIXL may also include a pixel definition layer PDL located between the pixel electrode layer PEL and the light-emitting functional layer EFL. The pixel definition layer PDL has a plurality of through pixel openings arranged in a one-to-one correspondence with the plurality of pixel electrodes PE, and any pixel opening exposes at least a portion of the corresponding pixel electrode. For example, the pixel definition layer PDL covers the edge of the pixel electrode PE and exposes at least a portion of the internal area of ​​the pixel electrode PE, so that the pixel definition layer PDL can effectively define the actual effective area of ​​the pixel electrode PE (the area directly connected to the light-emitting functional unit EFU), thereby defining the light-emitting area and light-emitting area of ​​the light-emitting element LD. The light-emitting functional layer EFL at least covers the pixel electrode PE exposed by the pixel definition layer PDL. The common electrode layer COML can cover the light-emitting functional layer EFL in the display area. The pixel electrode PE and the common electrode layer COML provide carriers such as electrons and holes to the light-emitting functional layer EFL, so that the light-emitting functional layer EFL emits light. The portion of the light-emitting functional layer EFL located between the pixel electrode PE and the common electrode layer COML can serve as the light-emitting functional unit EFU. The pixel electrode PE, the common electrode layer COML, and the light emitting functional unit EFU form a light emitting element LD, wherein one of the pixel electrode PE and the common electrode layer COML serves as an anode of the light emitting element LD, and the other serves as a cathode of the light emitting element LD.

[0074] In one example, the pixel electrode PE serves as an anode of the light emitting element LD, and the common electrode layer COML serves as a cathode of the light emitting element LD.

[0075] It is understandable that the types of light-emitting elements are different, and the materials and film layers of the light-emitting functional units EFU are different.

[0076] For example, referring to FIG6 , when the light-emitting element is an OLED, the light-emitting functional unit (EFU) may include an organic light-emitting layer (EML), and may include one or more of a hole injection layer (HIL), a hole transport layer (HTL), an electron blocking layer (EBL), a hole blocking layer (HBL), an electron transport layer (ETL), and an electron injection layer (EIL). Furthermore, the organic light-emitting layer (EML) may include a light-emitting layer host material and a light-emitting layer guest material. The light-emitting layer guest material may be a fluorescent dopant or a phosphorescent dopant, and in particular, may be a thermally activated delayed fluorescent material. Referring to FIG7 , when the OLED adopts a stacked structure, a charge generation layer (CGL) may also be provided in the light-emitting functional layer (EFL).

[0077] For another example, referring to FIG8 , when the light-emitting element is a QLED, the light-emitting functional unit (EFU) may include a quantum dot layer (QDL), and may include one or more of a hole injection layer (HIL), an electron transport layer (ETL), an electron blocking layer (EBL), a hole blocking layer (HBL), an electron transport layer (ETL), and an electron injection layer (EIL). Furthermore, the quantum dot layer (QDL) may include quantum dot particles, which may be interconnected via surface modification groups. Referring to FIG9 , when the QLED adopts a stacked structure, a charge generation layer (CGL) may also be provided in the light-emitting functional unit (EFU).

[0078] In the embodiments of the present disclosure, referring to Figures 6 to 9 , the light-emitting functional unit EFU may include a single light-emitting stack structure ELS, or may include a stack of multiple light-emitting stack structures ELS. When the light-emitting functional unit EFU includes multiple light-emitting stack structures ELS, a charge generation layer CGL may be provided between two adjacent light-emitting stack structures ELS. Each light-emitting stack structure ELS is provided with one or more light-emitting layers, which may be either an organic light-emitting layer EML or a quantum dot layer QDL.

[0079] In the examples of Figures 6 and 8 , the light-emitting functional unit (EFU) comprises a light-emitting stack structure (ELS). Referring to Figures 6 and 8 , the light-emitting element (LD) comprises an anode (AE), a light-emitting stack structure (ELS), and a cathode (CE) stacked in sequence. The light-emitting stack structure (ELS) comprises a hole regulation layer, a light-emitting layer (e.g., an organic light-emitting layer (EML) or a quantum dot layer (QDL), and an electron regulation layer stacked in sequence. The hole regulation layer is located on the side of the light-emitting layer closer to the anode (AE), and the electron regulation layer is located on the side of the light-emitting layer closer to the cathode (CE). The anode (AE) is used to inject holes into the light-emitting layer via the hole regulation layer, while the cathode (CE) is used to inject electrons into the light-emitting layer via the electron regulation layer. The hole regulation layer and the electron regulation layer are respectively used to adjust the injection efficiency and injection rate of holes and electrons into the light-emitting layer, as well as the energy levels of the injected electrons and holes, thereby improving the balance between hole and electron injection and thereby improving the performance of the light-emitting functional unit (EFU), such as increasing the luminous efficiency of the light-emitting element (LD), increasing the device lifespan of the light-emitting element (LD), and reducing the power supply voltage of the light-emitting element (LD).

[0080] The hole regulation layer may include one or more layers of a hole injection layer HIL, a hole transport layer HTL, an electron blocking layer EBL, and the like, wherein the hole injection layer HIL, the hole transport layer HTL, the electron blocking layer EBL, and the like are stacked sequentially in a direction from the anode AE ​​to the light-emitting layer. It will be appreciated that in some examples, one or more of the hole injection layer HIL, the hole transport layer HTL, the electron blocking layer EBL, and the like may be configured as a multi-layer stacked structure. For example, the hole transport layer HTL may include a first hole transport layer and a second hole transport layer stacked together.

[0081] The electron regulation layer may include one or more layers of an electron injection layer (EIL), an electron transport layer (ETL), a hole blocking layer (HBL), and the like, wherein the electron injection layer (EIL), the electron transport layer (ETL), the hole blocking layer (HBL), and the like are stacked sequentially in a direction from the cathode (CE) to the light-emitting layer. It is understood that in some examples, one or more of the electron injection layer (EIL), the electron transport layer (ETL), the hole blocking layer (HBL), and the like may be configured as a multi-layer stacked structure. For example, the electron transport layer (ETL) may include a first electron transport layer and a second electron transport layer stacked in layers.

[0082] In the examples of Figures 7 and 9, the light-emitting functional unit EFU has a multi-layer stacked light-emitting stack structure ELS (Figures 7 and 9 illustrate a two-layer light-emitting stack structure ELS). Referring to Figures 7 and 9, the light-emitting element LD includes an anode AE, a multi-layer stacked light-emitting stack structure ELS, and a cathode CE stacked in sequence. Among them, any layer of the light-emitting stack structure ELS includes a hole regulation layer, a light-emitting layer (such as an organic light-emitting layer EML or a quantum dot layer QDL), and an electron regulation layer stacked in sequence, the hole regulation layer is located on the side of the light-emitting layer close to the anode AE, and the electron regulation layer is located on the side of the light-emitting layer close to the cathode CE.

[0083] Optionally, the light-emitting functional unit EFU may further include a charge generation layer CGL located between two adjacent light-emitting stack structures ELS to improve the efficiency of injecting electrons and holes into the two adjacent light-emitting stack structures ELS. For example, the charge generation layer CGL includes an N-type charge generation layer NCGL and a P-type charge generation layer PCGL stacked between two adjacent light-emitting stack structures ELS; wherein the N-type charge generation layer NCGL is adjacent to the electron regulation layer of one of the light-emitting stack structures ELS, and is used to inject electrons into the electron regulation layer of the light-emitting stack structure ELS; the P-type charge generation layer PCGL is adjacent to the hole regulation layer of the other light-emitting stack structure ELS, and is used to inject holes into the hole regulation layer of the light-emitting stack structure ELS. In other words, the P-type charge generation layer PCGL is provided on the side of the N-type charge generation layer NCGL away from the anode AE. Of course, it can be understood that in other examples, the charge generation layer CGL may also include other structures.

[0084] It is understood that in some other embodiments of the present disclosure, the electron regulation layer of the light emitting stacked structure ELS may be omitted, or may have other structures in addition to the electron injection layer EIL, the electron transport layer ETL and the hole blocking layer HBL.

[0085] It is understood that in some other embodiments of the present disclosure, the hole regulating layer of the light emitting stacked structure ELS may be omitted, or may have other structures in addition to the hole injection layer HIL, the hole transport layer HTL and the electron blocking layer EBL.

[0086] It is understood that when a light-emitting stacked structure ELS is provided with multiple light-emitting layers, the colors of the multiple light-emitting layers can be the same or different, and the types of the multiple light-emitting layers can be the same or different. For example, a light-emitting stacked structure ELS is provided with two light-emitting layers, and the two light-emitting layers can be a stacked red organic light-emitting layer EML and a green organic light-emitting layer EML. For another example, a light-emitting stacked structure ELS is provided with two light-emitting layers, and the two light-emitting layers can be a stacked red organic light-emitting layer EML and a red quantum dot layer QDL.

[0087] It is understandable that, for any light-emitting stacked structure ELS, it may be provided with a light-emitting layer (such as a quantum dot layer QDL or an organic light-emitting layer EML), and may be provided with one or more of a hole injection layer HIL, an electron transport layer ETL, an electron blocking layer EBL, a hole blocking layer HBL, an electron transport layer ETL and an electron injection layer EIL, or other film layers may be added as needed. Of course, in the light-emitting stacked structure ELS, one or more of the hole injection layer HIL, the electron transport layer ETL, the electron blocking layer EBL, the hole blocking layer HBL, the electron transport layer ETL and the electron injection layer EIL may also be omitted. For two light-emitting stacked structures ELS of the same light-emitting element LD, the film layer structures of the two light-emitting stacked structures ELS may be the same or different.

[0088] For example, in the example of FIG10 , three light-emitting elements LD of different colors, namely a red light-emitting element R, a green light-emitting element G, and a blue light-emitting element B, are provided on the display panel PNL; the light-emitting functional unit EFU of each light-emitting element LD includes a stacked light-emitting stack structure ELS, a charge generation layer CGL, and a light-emitting stack structure ELS. In this example, the light-emitting stack structure ELS near the anode AE ​​includes a hole injection layer HIL, a hole transport layer HTL, an electron blocking layer EBL (e.g., an electron blocking layer REBL for the red light-emitting element, an electron blocking layer GEBL for the green light-emitting element, or an electron blocking layer BEBL for the blue light-emitting element), an organic light-emitting layer EML (e.g., an organic light-emitting layer REML for the red light-emitting element, an organic light-emitting layer GEML for the green light-emitting element, or an organic light-emitting layer BEML for the blue light-emitting element), and a hole blocking layer HBL; in other words, the electron transport layer and the electron injection layer are omitted from the light-emitting stack structure ELS. In this example, the light-emitting stacked structure ELS near the cathode CE includes a hole transport layer HTL, an electron blocking layer EBL (for example, the electron blocking layer REBL of a red light-emitting element, the electron blocking layer GEBL of a green light-emitting element, or the electron blocking layer BEBL of a blue light-emitting element), an organic light-emitting layer EML (for example, the organic light-emitting layer REML of a red light-emitting element, the organic light-emitting layer GEML of a green light-emitting element, or the organic light-emitting layer BEML of a blue light-emitting element), a hole blocking layer HBL, an electron transport layer ETL, and a hole injection layer HIL, which are stacked in sequence; in other words, the hole injection layer is omitted in the light-emitting stacked structure ELS.

[0089] 4 , the thin film encapsulation layer TFE may be provided on the surface of the pixel layer PIXL away from the base substrate BP, which may include an inorganic encapsulation layer and an organic encapsulation layer alternately stacked. The inorganic encapsulation layer can effectively block external moisture and oxygen, and prevent water and oxygen from invading the pixel layer PIXL and causing aging of the material in the pixel layer PIXL. Optionally, the edge of the inorganic encapsulation layer may be located in the peripheral area. The organic encapsulation layer is located between two adjacent inorganic encapsulation layers to achieve planarization and reduce the stress between the inorganic encapsulation layers. The edge of the organic encapsulation layer may be located between the edge of the display area and the edge of the inorganic encapsulation layer. Exemplarily, the thin film encapsulation layer TFE includes a first inorganic encapsulation layer CVD1, an organic encapsulation layer IJP, and a second inorganic encapsulation layer CVD2 sequentially stacked on the side of the pixel layer PIXL away from the base substrate BP. Of course, in other embodiments of the present disclosure, the display panel may not be provided with a thin film encapsulation layer, but may use other methods to encapsulate and protect the pixel layer.

[0090] In some embodiments of the present disclosure, referring to FIG. 4 , the display panel PNL may further include a touch function layer TSL. The touch function layer TSL may be disposed on a side of the thin film encapsulation layer TFE away from the driving backplane DBP, so that the display panel PNL has a touch function.

[0091] In some embodiments of the present disclosure, referring to FIG. 4 , the display panel PNL may further include a color filter layer CFL. The color filter layer CFL may be disposed on a side of the thin film encapsulation layer TFE away from the driving backplane DBP to reduce reflection of ambient light and improve display quality.

[0092] In the embodiment of the present disclosure, due to process reasons, such as when an open mask process is adopted, a common material layer may be present in the light-emitting functional layer EFL, and the common material layer may cover the gaps between the multiple light-emitting elements LD, so that adjacent light-emitting elements LD are connected through the common material layer. For example, the common material layer may cover the display area AA and be applied to each light-emitting functional unit EFU at the same time, and the portion of the common material layer in each light-emitting functional unit EFU serves as a structural film layer of the light-emitting functional unit EFU (such as one of the hole injection layer HIL, the hole transport layer HTL, the electron blocking layer EBL, the N-type charge generation layer NCGL, the P-type charge generation layer PCGL, the hole blocking layer HBL, the electron transport layer ETL and the electron injection layer EIL).

[0093] For example, in the example of FIG10 , the light-emitting functional layer EFL is provided with a hole injection material layer HILX, a hole transport material layer HTLX, a hole blocking material layer HBLX, an N-type charge generation material layer NCGLX, a P-type charge generation material layer PCGLX, an electron transport material layer ETLX, and an electron injection material layer EILX. The hole injection material layer HILX covers the gaps between multiple light-emitting elements, such as the display area AA. The hole injection material layer HILX is located in the portion of each light-emitting functional unit EFU and serves as the hole injection layer HIL for that light-emitting functional unit EFU. The hole injection material layer HILX is a common material layer for the light-emitting functional layer EFL. The hole transport material layer HTLX covers the gaps between multiple light-emitting elements, such as the display area AA. The hole transport material layer HTLX is located in the portion of each light-emitting functional unit EFU and serves as the hole transport layer HTL for that light-emitting functional unit EFU. The hole transport material layer HTLX is a common material layer for the light-emitting functional layer EFL. The hole-blocking material layer HBLX covers the gaps between multiple light-emitting elements, such as the display area AA. The hole-blocking material layer HBLX is located in the portion of each light-emitting functional unit (EFU) and serves as the hole-blocking layer HBL for that light-emitting functional unit (EFU). The hole-blocking material layer HBLX is a common material layer for the light-emitting functional layer (EFL). The N-type charge-generating material layer NCGLX covers the gaps between multiple light-emitting elements, such as the display area AA. The N-type charge-generating material layer NCGLX is located in the portion of each light-emitting functional unit (EFU) and serves as the N-type charge-generating layer NCGL for that light-emitting functional unit (EFU). The N-type charge-generating material layer NCGLX is a common material layer for the light-emitting functional layer (EFL). The P-type charge-generating material layer PCGLX covers the gaps between multiple light-emitting elements, such as the display area AA. The P-type charge-generating material layer PCGLX is located in the portion of each light-emitting functional unit (EFU) and serves as the P-type charge-generating layer PCGL for that light-emitting functional unit (EFU). The P-type charge-generating material layer PCGLX is a common material layer for the light-emitting functional layer (EFL). The electron transport material layer ETLX covers the gaps between multiple light-emitting elements, such as covering the display area AA. The electron transport material layer ETLX is located in the portion of each light-emitting functional unit EFU and serves as the electron transport layer ETL of the light-emitting functional unit EFU. The electron transport material layer ETLX is a common material layer of the light-emitting functional layer EFL. The electron injection material layer EILX covers the gaps between multiple light-emitting elements, such as covering the display area AA. The electron injection material layer EILX is located in the portion of each light-emitting functional unit EFU and serves as the electron injection layer EIL of the light-emitting functional unit EFU. The electron injection material layer EILX is a common material layer of the light-emitting functional layer EFL.

[0094] It can be understood that the common material layer illustrated in Figure 10 is merely an example of the common material layer of an embodiment of the present disclosure; in other embodiments of the present disclosure, other common material layers may be provided, or at least part of the common material layer illustrated in Figure 10 may be omitted.

[0095] However, when a light-emitting element LD is loaded with a driving current and emits light, the driving current may leak laterally along the common material layer to another light-emitting element LD, causing the other light-emitting element LD to emit light. This leads to crosstalk between adjacent light-emitting elements LD. In particular, when a green light-emitting element G emits light, it causes the adjacent red light-emitting element R to emit light. The lower the grayscale of the green light-emitting element G, the closer the grayscale of the red light-emitting element R, which is the target of crosstalk, becomes to that of the green light-emitting element G, resulting in more severe crosstalk.

[0096] When analyzing this crosstalk, the inventors discovered that in related art, the lateral resistance of some common material layers within the light-emitting functional layer (EFL) is relatively low, which can lead to significant lateral leakage. In particular, the lateral resistance of the common material layer within the light-emitting functional layer (EFL), which at least partially comprises hole-transporting materials, is relatively low, resulting in a large lateral current. For example, in some related art, the hole injection layer and the hole transport layer utilize the same hole-transporting material, both of which have relatively low lateral resistance. Furthermore, the hole injection layer is doped with P-type dopants, which increases the lateral current in the hole injection layer by hundreds of times.

[0097] To this end, in some embodiments of the present disclosure, at least one common material layer of the light-emitting functional layer EFL may include a hole-transporting nitrogen-containing compound, the structural formula of which is shown in Chemical Formula 1:

[0098] wherein L1, L2, and L3 are each independently selected from the group consisting of a single bond, a substituted or unsubstituted phenylene group, a substituted or unsubstituted biphenylene group, a substituted or unsubstituted naphthylene group, a substituted or unsubstituted phenanthrenyl group, a substituted or unsubstituted triphenylene group, a substituted or unsubstituted 9,9'-dimethylfluorenylene group, a substituted or unsubstituted 9,9'-diphenylfluorenylene group, a substituted or unsubstituted spirofluorenylene group, and a substituted or unsubstituted carbazolylene group;

[0099] Ar1 to Ar3 are each independently selected from: a substituted or unsubstituted aryl group having 6 to 50 ring carbon atoms, a substituted or unsubstituted heteroaryl group having 5 to 40 ring carbon atoms, and -N(Ar4Ar5); Ar4 and Ar5 are each independently selected from: a substituted or unsubstituted aryl group having 6 to 50 ring carbon atoms, a substituted or unsubstituted heteroaryl group having 5 to 40 ring carbon atoms; wherein at least one of Ar1 to Ar3 has a benzopentacyclic ring fragment or a dithiophene fragment;

[0100] When L1, L2, L3, Ar1, Ar2, Ar3, Ar4 or Ar5 has a substituent, the substituent is selected from deuterium, halogen, substituted or unsubstituted alkyl having 1 to 10 carbon atoms, substituted or unsubstituted cycloalkyl having 5 to 10 carbon atoms, substituted or unsubstituted aryl having 6 to 30 carbon atoms, and substituted or unsubstituted heteroaryl having 5 to 30 carbon atoms.

[0101] In this embodiment, at least one common material layer uses a hole-transporting nitrogen-containing compound, for example, the hole injection material layer HILX or the hole transport material layer HTLX uses a hole-transporting nitrogen-containing compound. The hole-transporting nitrogen-containing compound has a benzopentacyclic ring segment or a dithiophene segment, which imparts high steric hindrance and high lateral resistance to the hole-transporting nitrogen-containing compound. This reduces lateral leakage of the common material layer using the hole-transporting nitrogen-containing compound, thereby weakening or eliminating crosstalk between adjacent light-emitting elements LD.

[0102] In one embodiment of the present disclosure, L1, L2 and L3 are each independently selected from a single bond, a substituted or unsubstituted phenylene group, a substituted or unsubstituted biphenylene group, a substituted or unsubstituted terphenylene group, a substituted or unsubstituted naphthylene group, or a substituted or unsubstituted trimphenylene group.

[0103] In one embodiment of the present disclosure, when L1, L2 and L3 have a substituent, the substituent is selected from deuterium, fluorine, methyl, ethyl, propyl, isopropyl, tert-butyl, cyclofluorenyl, cyclohexyl, adamantyl, phenyl, naphthyl, biphenyl, carbazolyl, benzothiophenyl and benzofuranyl.

[0104] In one example, L1, L2 and L3 are each independently selected from a single bond, a phenylene group, a biphenylene group, a terphenylene group, a naphthylene group, and a trimphenylene group.

[0105] In one embodiment of the present disclosure, when Ar1, Ar2, Ar3, Ar4 or Ar5 has a substituent, the substituent is selected from deuterium, fluorine, methyl, ethyl, propyl, isopropyl, tert-butyl, cyclofluorenyl, cyclohexyl, adamantyl, phenyl, naphthyl, biphenyl, carbazolyl, benzothiophenyl, and benzofuranyl.

[0106] In one embodiment of the present disclosure, at least one of Ar1 to Ar3 has a group represented by the following Chemical Formula 2 or Chemical Formula 3:

[0107] Among them, * indicates connection to L1, L2, L3 or N;

[0108] L4 and L5 are each independently selected from the group consisting of a single bond, a substituted or unsubstituted phenylene group, a substituted or unsubstituted biphenylene group, a substituted or unsubstituted naphthylene group, a substituted or unsubstituted phenanthrenyl group, a substituted or unsubstituted triphenylene group, a substituted or unsubstituted 9,9'-dimethylfluorenylene group, a substituted or unsubstituted 9,9'-diphenylfluorenylene group, a substituted or unsubstituted spirofluorenylene group, and a substituted or unsubstituted carbazolylene group;

[0109] X is selected from N(R2), C(R3R4), O, S, Si(R3R4); m is 0, 1 or 2;

[0110] R1 is selected from the group consisting of deuterium, halogen, substituted or unsubstituted alkyl having 1 to 10 carbon atoms, substituted or unsubstituted cycloalkyl having 5 to 10 carbon atoms, substituted or unsubstituted aryl having 6 to 30 carbon atoms, and substituted or unsubstituted heteroaryl having 5 to 30 carbon atoms;

[0111] R2 to R4 are each independently selected from a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted cycloalkyl group having 5 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 5 to 30 carbon atoms;

[0112] When there are two R1s and they are connected to two adjacent carbon atoms, the two R1s can also be connected to form an aromatic ring or an aliphatic ring;

[0113] R3 and R4 can also be connected to form an aromatic ring or an aliphatic ring. It is understood that R3 and R4 can be independently connected to C or Si without being connected to form a ring, or they can be connected to form an aromatic ring or an aliphatic ring.

[0114] In one example, when L4 and L5 have a substituent, the substituent is selected from deuterium, fluorine, methyl, ethyl, propyl, isopropyl, tert-butyl, cyclofluorenyl, cyclohexyl, adamantyl, phenyl, naphthyl, biphenyl, carbazolyl, benzothiophenyl, and benzofuranyl.

[0115] In one example, L4 and L5 are each independently selected from a single bond, a phenylene group, a biphenylene group, a terphenylene group, a naphthylene group, and a trimphenylene group.

[0116] In one example, R1 is selected from deuterium, fluorine, methyl, ethyl, propyl, isopropyl, tert-butyl, cyclofluorenyl, cyclohexyl, adamantyl, phenyl, naphthyl, biphenyl, carbazolyl, benzothienyl, and benzofuranyl.

[0117] In one example, R2 to R4 are each independently selected from methyl, ethyl, propyl, isopropyl, tert-butyl, cyclofluorenyl, cyclohexyl, adamantyl, phenyl, naphthyl, biphenyl, carbazolyl, benzothiophenyl, and benzofuranyl.

[0118] In one embodiment of the present disclosure, the Ar1 to Ar5 are each independently selected from 9,9'-dimethylfluorenyl, spirofluorenyl, benzothiophenyl, N-phenylcarbazolyl, phenyl, biphenyl, 9-phenyl-1,2,3,4-tetrahydrocarbazolyl, phenyl-substituted thieno[3,2-b]thienyl, thieno[3,2-b]thienyl, naphthyl, 9,9'-diphenylfluorenyl, dibenzofuranyl, dibenzothienyl; and at least one of Ar1 to Ar3 contains a phenyl-substituted thieno[3,2-b]thienyl or thieno[3,2-b]thienyl.

[0119] In one embodiment of the present disclosure, the hole transport nitrogen-containing compound is selected from the group consisting of the following compounds:

[0120] In the embodiments of the present disclosure, performance tests were also conducted on some hole-transporting nitrogen-containing compounds. In this test, the control compound used was the common hole-transporting compound NPB. Both the test compound and the control compound were doped with 3% of a P-type dopant, and then the lateral current was measured at a test voltage of 10V. The test results were normalized to the lateral current of NPB as a benchmark, and the lateral currents of the other test compounds were normalized. The test results are shown in Table 1:

[0121] Table 1

[0122] The test data in Table 1 show that the hole-transporting nitrogen-containing compound provided in the embodiments of the present disclosure can effectively reduce lateral current. Therefore, when the hole-transporting nitrogen-containing compound is applied to the common material layer of the light-emitting functional layer (EFL), it can prevent excessive lateral current in the common material layer from causing crosstalk between different light-emitting elements (LD).

[0123] In some embodiments of the present disclosure, L1, L2, and L3 are all single bonds, so that the hole-transporting nitrogen-containing compound has large steric hindrance, thereby reducing the lateral current after the hole-transporting nitrogen-containing compound is formed into a film.

[0124] In some embodiments of the present disclosure, at least one of Ar1, Ar2, and Ar3 is a 9,9'-dimethylfluorenyl, a 9,9'-diphenylfluorenyl, or a spirofluorenyl, and the fluorenyl group is connected to the central nitrogen atom of the hole-transporting nitrogen-containing compound by a single bond; at least one of Ar1, Ar2, and Ar3 is a substituted or unsubstituted thieno[3,2-b]thienyl, or a substituted or unsubstituted benzothienyl; wherein, either the substituted or unsubstituted benzothienyl is connected to the central nitrogen atom of the hole-transporting nitrogen-containing compound by a single bond, and the substituted or unsubstituted thieno[3,2-b]thienyl can be connected to the central nitrogen atom of the hole-transporting nitrogen-containing compound by a single bond or a phenylene group.

[0125] It is understood that in the light-emitting functional layer (EFL) of the present disclosure, multiple common material layers containing hole-transporting materials may be present. The hole-transporting nitrogen-containing compound provided in the present disclosure may be present in only one of these common material layers or in multiple layers. The present disclosure does not necessarily require that all hole-transporting materials in the light-emitting functional layer (EFL) be hole-transporting nitrogen-containing compounds.

[0126] In one embodiment of the present disclosure, the light-emitting functional layer EFL includes a hole injection material layer HILX, which covers the gaps between the multiple light-emitting elements, for example, covering the display area AA. In this way, the hole injection material layer HILX is a common material layer of the light-emitting functional layer EFL. The portion of the hole injection material layer HILX in each light-emitting functional unit EFU can serve as the hole injection layer HIL of the light-emitting functional unit EFU. In this embodiment, the hole injection material layer HILX can include the above-mentioned hole-transporting nitrogen-containing compound, thereby reducing the lateral resistance of the hole injection material layer HILX.

[0127] In some examples of this embodiment, the hole injection material layer HILX may further include a P-type dopant to enhance the hole injection capability of the hole injection layer HIL. The mass content of the P-type dopant in the hole injection material layer HILX does not exceed 3% to avoid excessive lateral current in the hole injection material layer HILX due to an excessive amount of the P-type dopant. Furthermore, the mass content of the P-type dopant in the hole injection material layer HILX is 0.5% to 1.5%, for example, 1%.

[0128] In some examples of this embodiment, the hole injection material layer HILX can be composed of a hole-transporting nitrogen-containing compound and a P-type dopant; the P-type dopant has a mass content between 0.5% and 1.5%. This significantly reduces the lateral current in the hole injection material layer HILX compared to related technologies, significantly reducing or eliminating crosstalk between light-emitting elements LD.

[0129] This embodiment also provides test results of the lateral current of the hole injection material layer HILX when the hole injection material layer HILX has different doping amounts (mass content) of P-type dopants. Referring to Figure 11, when the mass content of the P-type dopant in the hole injection material layer HILX does not exceed 3%, the lateral current of the hole injection material layer HILX is reduced. The smaller the mass content of the P-type dopant, the smaller the lateral current of the hole injection material layer HILX. In this way, the hole injection material layer HILX of this embodiment can significantly reduce the lateral current of the hole injection material layer HILX by adopting a hole-transporting nitrogen-containing compound on the one hand and reducing the mass content of the P-type dopant on the other hand; this can achieve a balance between improving hole injection efficiency and reducing crosstalk.

[0130] In one embodiment of the present disclosure, referring to FIG. 10 , the light-emitting functional layer (EFL) includes a hole transport material layer (HTLX). This hole transport material layer (HTLX) covers the gaps between the multiple light-emitting elements, such as the display area (AA). Thus, the hole transport material layer (HTLX) serves as a common material layer for the light-emitting functional layer (EFL); the portion of this hole transport material layer (HTLX) within each light-emitting functional unit (EFU) can serve as the hole transport layer (HTL) for that light-emitting functional unit (EFU). In this embodiment, the hole transport material layer (HTLX) can include the aforementioned hole-transporting nitrogen-containing compound, thereby reducing the lateral resistance of the hole transport material layer (HTLX).

[0131] For example, in one example, the hole transport material layer HTLX is made of the aforementioned hole transport nitrogen-containing compound. In another example, the hole transport material layer HTLX includes a plurality of different and mutually mixed materials, at least one of which is the aforementioned hole transport nitrogen-containing compound.

[0132] In one embodiment of the present disclosure, referring to FIG10 , at least a portion of the light-emitting elements LD include a multi-layer light-emitting stack structure ELS that is stacked in layers. In this case, the light-emitting functional layer EFL may have a P-type charge generation material layer PCGLX as a common material layer and an N-type charge generation material layer NCGLX as a common material layer. The P-type charge generation material layer PCGLX may cover a plurality of light-emitting elements LD and the gaps between the light-emitting elements LD. For example, the P-type charge generation material layer PCGLX may cover the display area AA. The portion thereof in each light-emitting element LD may serve as the P-type charge generation layer PCGL of the light-emitting element LD. The N-type charge generation material layer NCGLX may cover a plurality of light-emitting elements LD and the gaps between the light-emitting elements LD. For example, the display area AA may be covered. The portion thereof in each light-emitting element LD may serve as the N-type charge generation layer NCGL of the light-emitting element LD.

[0133] In one example of this embodiment, the P-type charge generation material layer PCGLX may include the aforementioned hole transport nitrogen-containing compound, which can reduce the lateral current of the P-type charge generation material layer PCGLX and weaken or eliminate crosstalk between the light emitting elements LD.

[0134] Optionally, the P-type charge generating material layer PCGLX is also doped with a P-type dopant to improve the ability of the P-type charge generating layer PCGL to generate holes. Furthermore, the material of the P-type charge generating material layer PCGLX is composed of the hole transport type nitrogen-containing compound and the P-type dopant, and the mass content of the P-type dopant is not less than 10%. For example, the material of the P-type charge generating layer PCGL is composed of the hole transport type nitrogen-containing compound and the P-type dopant, and the mass content of the P-type dopant is between 10% and 15%. In this way, the P-type charge generating material layer PCGLX can have a larger hole generating ability, and the P-type charge generating material layer PCGLX can be prevented from having an excessively large lateral current, thereby achieving a balance between improving luminous efficiency and reducing crosstalk.

[0135] In one example, the hole transport material in the P-type charge generating material layer PCGLX is the same as the hole transport material in the hole injection material layer HILX; the P-type dopant in the P-type charge generating material layer PCGLX is the same as the P-type dopant in the hole injection material layer HILX; the only difference is that the mass content of the P-type dopant in the P-type charge generating material layer PCGLX is greater.

[0136] In one embodiment of the present disclosure, the material of the N-type charge generation material layer NCGLX is composed of an electron transport compound and an N-type dopant; the electron transport compound contains a phenanthroline fragment or a phosphorus oxide fragment. In this example, the electron transport compound has a phenanthroline fragment or a phosphorus oxide fragment, which makes the electron transport compound have a large lateral resistance, which is conducive to reducing the lateral current of the N-type charge generation material layer NCGLX. In this way, the lateral current of the common material layer can be further reduced, reducing the crosstalk between the light-emitting elements LD.

[0137] Optionally, the N-type dopant may be a metal material of the first main group, such as lithium.

[0138] It can be understood that in some other embodiments of the present disclosure, even if the light-emitting element LD includes a multi-layer light-emitting stack structure ELS, the light-emitting functional layer EFL may not be provided with the P-type charge generation material layer PCGLX and the N-type charge generation material layer NCGLX as common material layers; for example, the P-type charge generation layer PCGL and the N-type charge generation layer NCGL may not be provided in some light-emitting elements LD.

[0139] It can be understood that when a part of the light-emitting elements LD of the display panel PNL has a multi-layer light-emitting stacking structure ELS and another part of the light-emitting elements LD has a single-layer light-emitting stacking structure ELS, the light-emitting elements LD with the single-layer light-emitting stacking structure ELS can be provided with a charge generation layer CGL or not.

[0140] In one embodiment of the present disclosure, the electron transport layer (ETL) may include an electron transport material, such as an electron transport material having an azine segment, and in particular, an electron transport material having a triazine segment. Furthermore, the electron transport layer (ETL) may be doped with a dopant, such as lithium quinolate (LiQ).

[0141] In one example, the electron transport material in the electron transport layer ETL may be different from the electron transport material in the N-type charge generation layer NCGL.

[0142] In one embodiment of the present disclosure, the hole blocking layer HBL may include an electron transport material, for example, an electron transport material having an azine segment, and in particular, an electron transport material having a triazine segment.

[0143] In some embodiments of the present disclosure, referring to Figures 12 to 15, the display panel PNL is provided with a partition structure PTS between the light-emitting elements LD; at least one layer of the common material layer EFLX is discontinuously provided at the partition structure PTS. In particular, the partition structure PTS makes at least one of the hole injection material layer HILX, the hole transport material layer HTLX, the P-type charge generation material layer PCGLX and the N-type charge generation material layer NCGLX discontinuous. Furthermore, the partition structure PTS can make the common material layer staggered, that is, different parts of the common material layer at the partition structure PTS can be at different heights. In this way, the partition structure PTS can reduce the width of the lateral current channel between two adjacent light-emitting elements LD, thereby reducing the lateral current between the two adjacent light-emitting elements LD.

[0144] In some examples, referring to Figures 12 and 13, the partition structure PTS can be a raised structure, for example, a raised structure having a larger size at the top (the portion away from the driver backplane DBP) than at the bottom (the portion close to the driver backplane DBP). The portion of the common material layer located above the raised structure is staggered with the portion located outside the raised structure, thereby causing the common material layer EFLX to be discontinuous. For example, the raised structure can be a raised structure with a trapezoidal or T-shaped cross-section.

[0145] In some examples, referring to Figures 14 and 15 , the partition structure PTS can be a groove structure, for example, a groove structure in which the groove opening is smaller than the groove bottom. The portion of the common material layer outside the groove structure is staggered with the portion at the groove bottom, thereby resulting in a discontinuous common material layer EFLX. For example, the groove structure can have a groove with a trapezoidal or T-shaped cross-section.

[0146] In some examples, the step difference T1 between different parts of the partition structure PTS is not less than the step difference between the light-emitting layer closest to the pixel electrode PE and the pixel electrode PE, for example, the step difference between different parts of the partition structure PTS is greater than 0.5 microns. This can ensure that the common material layer of the light-emitting functional layer EFL, especially the hole injection material layer HILX, is staggered and isolated at the partition structure PTS. In the embodiment of the present disclosure, the step difference between different parts of the partition structure PTS refers to the height difference (dimension in the normal direction of the display panel PNL) between the highest point of the partition structure PTS (the position farthest from the substrate BP) and the lowest point of the partition structure PTS (the position closest to the substrate BP). For example, when the partition structure PTS is a convex structure, the step difference T1 refers to the height difference between the base surface of the convex structure and the top surface of the convex structure. For another example, when the partition structure PTS is a groove structure, the step difference T1 refers to the height difference between the surface where the groove notch of the groove structure is located and the bottom of the groove.

[0147] Optionally, the display panel PNL includes a pixel definition layer (PDL) between the pixel electrode layer (PEL) and the light-emitting functional layer (EFL), and the partition structure (PTS) is disposed on the pixel definition layer (PDL). In this manner, the partition structure (PTS) can be fabricated simultaneously with the pixel definition layer (PDL), thereby reducing the number of manufacturing processes and masks, and lowering the manufacturing cost of the display panel PNL.

[0148] For example, a pixel definition material layer covering the pixel electrode layer PEL can be first formed, and then the pixel definition material layer can be patterned to form a pixel definition layer PDL. The pixel definition layer PDL has a pixel opening that exposes at least a portion of the pixel electrode area, and a groove structure that serves as a partition structure PTS; alternatively, the pixel definition layer PDL has a pixel opening that exposes at least a portion of the pixel electrode area, and a protrusion structure that serves as a partition structure PTS. Optionally, when patterning the pixel definition material layer, a grayscale mask process can be used to simultaneously prepare the pixel opening and the partition structure PTS.

[0149] In some embodiments of the present disclosure, referring to FIG2 and FIG3 , a partition structure PTS is provided between the red light-emitting element R and the green light-emitting element G. In this way, the lateral current flowing from the green light-emitting element G to the red light-emitting element R can be made smaller, further reducing or eliminating the crosstalk between the red light-emitting element R and the green light-emitting element G. For example, referring to FIG2 and FIG3 , a partition structure PTS is provided between adjacent red light-emitting elements R and green light-emitting elements G. Furthermore, the partition structure PTS can be extended in a long strip shape so as to achieve the maximum partition length while reducing the area of ​​the partition structure PTS, thereby minimizing the current channel size of the lateral current between the red light-emitting element R and the green light-emitting element G.

[0150] In some embodiments of the present disclosure, when a partition structure PTS is provided between two adjacent light-emitting elements LD, the partition structure PTS is strip-shaped; the arrangement square DV of the two adjacent light-emitting elements LD is perpendicular to the extension direction (length direction) of the partition structure PTS. This maximizes the partition structure PTS's ability to block lateral current.

[0151] For example, in the example of Figure 2 , the subpixels on the display panel PNL are arranged in an SRGB configuration. In this example, the light-emitting elements LD are arranged in a first subpixel column and a second subpixel column. The first subpixel column includes only a plurality of blue light-emitting elements B arranged sequentially along a column square DV. The second subpixel column includes red light-emitting elements R and green light-emitting elements G arranged alternately along the column square DV. When a partition structure PTS is provided between adjacent red light-emitting elements R and green light-emitting elements G, the partition structure PTS is strip-shaped and extends along the row direction DH.

[0152] Furthermore, the orthographic projections of the red light-emitting element R and the green light-emitting element G in the row direction DH can be located within the orthographic projections of the adjacent partition structure PTS in the row direction DH; this allows the shortest path of the lateral current between the red light-emitting element R and the adjacent green light-emitting element G to be completely blocked by the partition structure PTS. On the one hand, the current channel width of the lateral current between the red light-emitting element R and the green light-emitting element G can be compressed to a greater extent, and on the other hand, the current path of the lateral current can be greatly extended, thereby further weakening the lateral current between the red light-emitting element R and the green light-emitting element G.

[0153] For another example, in the example of FIG. 3 , the subpixels on the display panel PNL are arranged in a diamond arrangement. In this example, the light-emitting elements LD can be arranged into a plurality of first subpixel groups, each of which includes a plurality of light-emitting elements LD arranged sequentially along a first direction DX. The first subpixel groups include a first type of first subpixel group and a second type of first subpixel group, arranged side by side and alternating. The first type of first subpixel group includes red light-emitting elements R and green light-emitting elements G arranged alternately along the first direction DX, and the second type of first subpixel group includes blue light-emitting elements B and green light-emitting elements G arranged alternately along the first direction DX. The light-emitting elements LD can also be arranged into a plurality of second subpixel groups, each of which includes a plurality of light-emitting elements LD arranged sequentially along a second direction DY. The second subpixel groups include a first type of second subpixel group and a second type of second subpixel group, arranged side by side and alternating. The first type of second subpixel group includes red light-emitting elements R and green light-emitting elements G arranged alternately along the second direction DY, and the second type of second subpixel group includes blue light-emitting elements B and green light-emitting elements G arranged alternately along the second direction DY. In this example, both the first direction DX and the second direction DY are not parallel to the column direction DV and the row direction DH, and the first direction DX and the second direction DY are intersecting.

[0154] In the example of FIG3 , a partition structure PTS is provided between adjacent red light-emitting elements R and green light-emitting elements G. For example, a partition structure PTS is provided between the red light-emitting elements R and green light-emitting elements G in the first sub-pixel group of the first type. The partition structure PTS is strip-shaped and extends perpendicularly to the first direction DX. A partition structure PTS is provided between the red light-emitting elements R and green light-emitting elements G in the second sub-pixel group of the first type. The partition structure PTS is strip-shaped and extends perpendicularly to the second direction DY.

[0155] In some embodiments of the present disclosure, referring to FIG16 , the display panel PNL further comprises an auxiliary electrode layer COMLX disposed on a side of the common electrode layer COML away from the driving backplane DBP, wherein the auxiliary electrode layer COMLX is electrically connected to the common electrode layer COML and does not overlap with the light-emitting element LD. In this way, the auxiliary electrode layer COMLX can avoid blocking the light-emitting element LD and does not cause a reduction in the brightness of the display panel PNL; it can also be connected in parallel with the common electrode layer COML to reduce the impedance of the common electrode layer COML, improve the uniformity of the common voltage, and help reduce the power consumption of the display panel PNL. In one example, the material of the auxiliary electrode layer COMLX can be a metal or an alloy. Optionally, the auxiliary electrode layer COMLX can be in a grid shape, and each light-emitting element LD is located in the grid opening of the auxiliary electrode layer COMLX. Of course, the auxiliary electrode layer COMLX can also be in other shapes, such as a straight bar or a curved curve.

[0156] In one embodiment of the present disclosure, referring to FIG16 , an organic cover layer CML is provided between the common electrode layer COML and the auxiliary electrode layer COMLX in the display panel PNL; the organic cover layer CML has a connection via exposing the common electrode layer COML, and the auxiliary electrode layer COMLX is electrically connected to the common electrode layer COML through the connection via. Furthermore, the organic cover layer CML may include at least one of an impedance reduction layer and a light extraction auxiliary layer. The impedance reduction layer may be a fluorine-containing organic material layer that can reduce the impedance of the common electrode layer COML. The light extraction auxiliary layer may have a suitable refractive index to facilitate the extraction of light emitted by the light-emitting functional unit EFU.

[0157] Optionally, referring to Figures 2 and 3 , the connecting via CNT is located in the gap between the light-emitting elements LD and does not overlap with the partition structure PTS. For example, a connecting via CNT is provided between the red light-emitting element R and the blue light-emitting element B, or between the green light-emitting element G and the blue light-emitting element B, or between two adjacent blue light-emitting elements B.

[0158] Of course, in some other embodiments, a patterned resistance-reducing layer may also be formed by evaporation through a precision metal mask.

[0159] The present disclosure also provides a display device comprising any of the display panels described in the display panel embodiments above. The display device may be a smartphone screen, a smartwatch screen, or another type of display device. Because the display device comprises any of the display panels described in the display panel embodiments above, it exhibits the same beneficial effects, and the present disclosure will not elaborate further here.

[0160] Those skilled in the art will readily appreciate other embodiments of the present disclosure after considering the specification and practicing the invention disclosed herein. This application is intended to cover any variations, uses, or adaptations of the present disclosure that follow the general principles of the present disclosure and include common knowledge or customary techniques in the art not disclosed herein. The description and examples are to be considered as exemplary only, with the true scope and spirit of the present disclosure being indicated by the appended claims.

Claims

1. A display panel, comprising a driving backplane, a pixel electrode layer, a light-emitting functional layer and a common electrode layer stacked in sequence; the light-emitting functional layer has a common material layer, and the common material layer covers the gaps between the plurality of light-emitting elements; at least one layer of the common material layer has a hole transport type nitrogen-containing compound, and the structural formula of the hole transport type nitrogen-containing compound is shown in Chemical Formula 1: in, L1, L2, L3 are each independently selected from: a single bond, a substituted or unsubstituted phenylene, a substituted or unsubstituted biphenylene, a substituted or unsubstituted naphthylene, a substituted or unsubstituted phenanthrenylene, a substituted or unsubstituted triphenylene, a substituted or unsubstituted 9,9'-dimethylfluorenylene, a substituted or unsubstituted 9,9'-diphenylfluorenylene, a substituted or unsubstituted spirofluorenylene, a substituted or unsubstituted carbazolylene; Ar1 to Ar3 are independently selected from: substituted or unsubstituted aryl groups having 6 to 50 ring carbon atoms, substituted or unsubstituted heteroaryl groups having 5 to 40 ring carbon atoms, and -N(Ar4Ar5); Ar4 and Ar5 are independently selected from: substituted or unsubstituted aryl groups having 6 to 50 ring carbon atoms, substituted or unsubstituted heteroaryl groups having 5 to 40 ring carbon atoms; wherein at least one of Ar1 to Ar3 has a benzopentacyclic fragment or a dithiophene fragment; When L1, L2, L3, Ar1, Ar2, Ar3, Ar4 or Ar5 has a substituent, the substituent is selected from deuterium, halogen, substituted or unsubstituted alkyl having 1 to 10 carbon atoms, substituted or unsubstituted cycloalkyl having 5 to 10 carbon atoms, substituted or unsubstituted aryl having 6 to 30 carbon atoms, and substituted or unsubstituted heteroaryl having 5 to 30 carbon atoms.

2. The display panel according to claim 1, wherein: At least one of Ar1 to Ar3 has a group represented by the following Chemical Formula 2 or Chemical Formula 3: Among them, * indicates connection with L1, L2, L3 or N; L4 and L5 are each independently selected from: a single bond, a substituted or unsubstituted phenylene, a substituted or unsubstituted biphenylene, a substituted or unsubstituted naphthylene, a substituted or unsubstituted phenanthrenylene, a substituted or unsubstituted triphenylene, a substituted or unsubstituted 9,9'-dimethylfluorenylene, a substituted or unsubstituted 9,9'-diphenylfluorenylene, a substituted or unsubstituted spirofluorenylene, a substituted or unsubstituted carbazolylene; X is selected from N(R2), C(R3R4), O, S, Si(R3R4); m is 0, 1 or 2; R1 is selected from the group consisting of: deuterium, halogen, substituted or unsubstituted alkyl having 1 to 10 carbon atoms, substituted or unsubstituted cycloalkyl having 5 to 10 carbon atoms, substituted or unsubstituted aryl having 6 to 30 carbon atoms, and substituted or unsubstituted heteroaryl having 5 to 30 carbon atoms; R2 to R4 are each independently selected from a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted cycloalkyl group having 5 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, or a substituted or unsubstituted heteroaryl group having 5 to 30 carbon atoms; When the number of R1 is two, the two R1 can also be connected to form an aromatic ring or an aliphatic ring; R3 and R4 can also be connected to each other to form an aromatic ring or an aliphatic ring.

3. The display panel according to claim 1, wherein: The L1, L2 and L3 are each independently selected from a single bond, a phenylene group, a biphenylene group, a terphenylene group, a naphthylene group, and a trimphenylene group; The Ar1 to Ar5 are each independently selected from 9,9'-dimethylfluorenyl, spirofluorenyl, benzothiophenyl, N-phenylcarbazolyl, phenyl, biphenyl, 9-phenyl-1,2,3,4-tetrahydrocarbazolyl, phenyl-substituted thieno[3,2-b]thienyl, thieno[3,2-b]thienyl, naphthyl, 9,9'-diphenylfluorenyl, dibenzofuranyl, and dibenzothienyl; and at least one of Ar1 to Ar3 contains a phenyl-substituted thieno[3,2-b]thienyl or thieno[3,2-b]thienyl.

4. The display panel according to claim 1, wherein: The hole transport type nitrogen-containing compound is selected from the group consisting of the following compounds:

5. The display panel according to claim 1, wherein: The light-emitting functional layer includes a hole injection material layer; the hole injection material layer covers the gaps between the plurality of light-emitting elements, and the hole injection material layer contains the hole transport type nitrogen-containing compound.

6. The display panel according to claim 5, wherein: The hole injection material layer is made of the hole transport type nitrogen-containing compound and a P-type dopant, and the mass content of the P-type dopant does not exceed 3%.

7. The display panel according to claim 5, wherein: The hole injection material layer is made of the hole transport type nitrogen-containing compound and a P-type dopant, and the mass content of the P-type dopant is between 0.5% and 1.5%.

8. The display panel according to claim 1, wherein: The light-emitting functional layer includes a P-type charge generating material layer; the P-type charge generating material layer covers the gaps between the plurality of light-emitting elements and contains the hole transport type nitrogen-containing compound.

9. The display panel according to claim 8, wherein: The material of the P-type charge generating material layer is composed of the hole transport type nitrogen-containing compound and a P-type dopant, and the mass content of the P-type dopant is not less than 10%.

10. The display panel according to claim 8, wherein: The material of the P-type charge generation material layer is composed of the hole transport type nitrogen-containing compound and a P-type dopant, and the mass content of the P-type dopant is between 10% and 15%.

11. The display panel according to claim 1, wherein: The light-emitting functional layer includes an N-type charge generating material layer, and the N-type charge generating material layer covers the gaps between the plurality of light-emitting elements; The material of the N-type charge generation material layer is composed of an electron transport compound and an N-type dopant; the electron transport compound contains a phenanthroline fragment or a phosphorus oxygen fragment.

12. The display panel according to any one of claims 1 to 11, wherein: The display panel is provided with a partition structure between the light emitting elements; and at least one layer of the common material layer is discontinuously provided at the partition structure.

13. The display panel according to claim 12, wherein: The display panel is provided with a pixel definition layer between the pixel electrode layer and the light-emitting function layer, and the partition structure is provided on the pixel definition layer.

14. The display panel according to claim 12, wherein: The light emitting elements include a red light emitting element, a green light emitting element and a blue light emitting element; The partition structure is arranged between the red light emitting element and the green light emitting element.

15. The display panel according to claim 12, wherein: The light-emitting functional layer includes a hole injection material layer covering the gaps between the plurality of light-emitting elements; the hole injection material layer is discontinuously arranged at the partition structure.

16. The display panel according to claim 12, wherein: The light-emitting functional layer includes a charge-generating material layer covering gaps between the plurality of light-emitting elements, and the charge-generating material layer is discontinuously disposed at the partition structure.

17. The display panel according to any one of claims 1 to 11, wherein: The display panel further comprises an auxiliary electrode layer disposed on a side of the common electrode layer away from the driving backplane, wherein the auxiliary electrode layer is electrically connected to the common electrode layer and does not overlap with the light emitting element.

18. The display panel according to claim 17, wherein: The display panel is provided with an organic cover layer between the common electrode layer and the auxiliary electrode layer; the organic cover layer has a connection via hole exposing the common electrode layer, and the auxiliary electrode layer is electrically connected to the common electrode layer through the connection via hole.

19. A display device comprising the display panel according to any one of claims 1 to 18.

Images