Band-pass film and preparation method therefor, and detector

By using a multi-layer cutoff layer structure of germanium, tellurium and zinc sulfide materials, the problem of insufficient light transmittance and excessive stress in the bandpass film wavelength range of 8μm to 14μm is solved, and efficient light recognition and production efficiency are achieved.

WO2025001954A1PCT designated stage expired Publication Date: 2025-01-02HANGZHOU HIKMICRO SENSING TECH CO LTD
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Patent Information

Application Number
PCT/CN2024/100294
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2023-06-30
Filing Date
2024-06-20
Publication Date
2025-01-02

AI Technical Summary

Technical Problem

The existing bandpass films have insufficient light transmittance and excessive stress in the wavelength range of 8 μm to 14 μm, resulting in problems of low recognition rate and high production costs.

Method used

Using a multi-layer cutoff layer structure including germanium, tellurium and zinc sulfide materials, by adjusting the number of layers and arrangement, avoiding the use of lead elements, reducing the number of film layers, improving the transmittance and qualification rate of the film, and evaporation through evaporation and Magnetically controlled sputtering process to prepare bandpass films.

Benefits of technology

The transmittance of the bandpass film to 8 μm to 14 μm light is improved, stress is reduced, the pass rate and production efficiency of the film are increased, and production costs are reduced.

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Abstract

Disclosed in the present application are a band-pass film and a preparation method therefor, and a detector. The band-pass film comprises a substrate and a cut-off layer. The cut-off layer is located on one side of the substrate. The cut-off layer comprises a first cut-off sub-layer located on the substrate, and a plurality of second cut-off sub-layers and a plurality of third cut-off sub-layers which are located on the side of the first cut-off sub-layer away from the substrate and are alternately stacked. The material of the first cut-off sub-layer comprises germanium; the material of at least part of the second cut-off sub-layers comprises tellurium; and the material of the third cut-off sub-layers comprises zinc sulfide.
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Citation Information

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