Light-emitting apparatus

Abstract

Disclosed in the present application is a light-emitting apparatus. The light-emitting apparatus comprises a substrate, which comprises a light-emitting area and a non-light-emitting area provided on one side of the light-emitting area, wherein the light-emitting area comprises a first electrode and a light-emitting layer which are sequentially arranged in a stacked manner on one side of the substrate, and the first electrode is arranged on the side of the light-emitting layer that is close to the substrate; a lapping conductive block and an electrode lead are provided in the non-light-emitting area of the substrate, an insulating layer is arranged on the side of the lapping conductive block and electrode lead that is away from the substrate, and the insulating layer covers part of the electrode lead and lapping conductive block; a dummy lead or an electric breakdown weak area are further provided in the non-light-emitting area of the substrate, the dummy lead is arranged adjacent to the lapping conductive block, and the dummy lead surrounds or partially surrounds the lapping conductive block; and the electric breakdown weak area comprises a conductive structure arranged on a surface of the substrate, the conductive structure and the first electrode are arranged on the same side of the substrate, and at least part of the light-emitting layer covers the conductive structure of the electric breakdown weak area.

Description

Light-emitting device

[0001] This application claims priority to the Chinese patent application filed with the China Patent Office on June 30, 2023, with application number 202310798876.4, and the Chinese patent application filed with the China Patent Office on December 26, 2023, with application number 202311813191.9, the entire contents of which are incorporated by reference into this application. Technical Field

[0002] The present application relates to the field of light emitting technology, for example, to a light emitting device. Background Art

[0003] An organic light-emitting diode (OLED) is a photoelectric device that emits light through carrier injection and recombination. The specific luminescence process involves electrons injected through the cathode, transported to the light-emitting layer via an electron-transporting material, and holes injected through the anode, transported to the light-emitting layer via a hole-transporting material. The electrons and holes recombine in the light-emitting layer to form excitons, which then de-excite to emit light. OLEDs have attracted considerable attention for their uniform emission, thinness, bendability, flexibility, and stretchability.

[0004] However, the OLED light-emitting device in the related art is prone to the problem of abnormal light emission in some areas.

[0005] In addition, OLED light-emitting devices are prone to problems such as black spots and bright spots during production and use. One important reason is that the human body or equipment discharges into the OLED, and the breakdown electric field acts on the inside of the screen, causing damage to the screen, resulting in black spots or bright spots, and reducing the reliability of the device and the life of the light-emitting device.

[0006] To achieve diverse lighting effects and interactive information, current OLED screens typically feature multi-zone designs. This typically involves patterning electrodes on the substrate, which are then connected to electrode bonding areas outside the package via electrode leads. To increase the screen's aperture ratio, the electrode leads are typically designed to be narrow. This design makes it very easy for the electric field to penetrate the electrode leads during discharge from the human body or equipment into the OLED light-emitting device, causing a short circuit or open circuit, leading to failure.

[0007] Currently, the commonly used method is to add a protection circuit to the external circuit or to add a pressure-sensitive circuit to the OLED device, but these methods will increase the difficulty of preparing the light-emitting device.

[0008] Summary of the Invention

[0009] The embodiments of the present application provide a light-emitting device, which can prevent abnormal light emission from the light-emitting device.

[0010] The light-emitting device provided in this application includes:

[0011] a substrate, the substrate comprising a light-emitting area and a non-light-emitting area arranged on one side of the light-emitting area,

[0012] The light-emitting region includes a first electrode and a light-emitting layer stacked in sequence on one side of the substrate, wherein the first electrode is disposed on a side of the light-emitting layer adjacent to the substrate.

[0013] The non-luminous area of ​​the substrate is provided with a lap conductive block and an electrode lead; an insulating layer is provided on a side of the lap conductive block and the electrode lead away from the substrate, and the insulating layer covers a portion of the electrode lead and the lap conductive block;

[0014] The non-luminous area of ​​the substrate is further provided with a dummy lead or an electrical breakdown weak area;

[0015] In which, the virtual lead is arranged adjacent to the overlapping conductive block, and the virtual lead surrounds or partially surrounds the overlapping conductive block; the electrically breakdown weak area includes a conductive structure arranged on the surface of the substrate, the conductive structure and the first electrode are arranged on the same side of the substrate, and at least part of the film layer in the light-emitting layer covers the conductive structure of the electrically breakdown weak area.

[0016] The present application provides a light-emitting device to avoid abnormal light emission of the light-emitting device.

[0017] The present application provides a light-emitting device, comprising:

[0018] A substrate, the substrate comprising a light-emitting area and a non-light-emitting area disposed on one side of the light-emitting area, the non-light-emitting area of ​​the substrate being provided with a bridging conductive block and an electrode lead; an insulating layer being provided on a side of the bridging conductive block and the electrode lead away from the substrate, the insulating layer covering a portion of the electrode lead and the bridging conductive block;

[0019] The non-luminous area of ​​the substrate is further provided with a dummy lead;

[0020] The virtual lead is arranged adjacent to the overlapping conductive block, and the virtual lead surrounds or partially surrounds the overlapping conductive block.

[0021] The present application provides a light-emitting device that can prevent external objects from discharging and damaging the light-emitting device without increasing the difficulty of manufacturing the light-emitting device.

[0022] The present application provides a light-emitting device, comprising:

[0023] a substrate comprising a light-emitting area and a non-light-emitting area disposed on at least one side of the light-emitting area;

[0024] The light emitting area includes a first electrode, an organic material layer, and a second electrode stacked in sequence on one side of the substrate, wherein the first electrode is disposed on a side of the organic material layer adjacent to the substrate;

[0025] The non-luminous area includes an electrically breakdown weak area, and the electrically breakdown weak area includes a conductive structure arranged on the surface of the substrate. The conductive structure and the first electrode are arranged on the same side of the substrate, and at least part of the film layer in the organic material layer covers the conductive structure of the electrically breakdown weak area. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] FIG1 is a schematic diagram of a light emitting device;

[0027] FIG2 is a top view of a light emitting device provided in an embodiment of the present application;

[0028] FIG3 is a cross-sectional view of the light emitting device in FIG2 along section line AA;

[0029] FIG4 is another top view of the light emitting device provided in an embodiment of the present application;

[0030] FIG5 is another top view of the light emitting device provided in an embodiment of the present application;

[0031] FIG6 is another top view of the light emitting device provided in an embodiment of the present application;

[0032] FIG7 is another top view of the light emitting device provided in an embodiment of the present application;

[0033] FIG8 is another cross-sectional view of the light emitting device provided in an embodiment of the present application;

[0034] FIG9 is a schematic diagram of a non-luminous area provided in an embodiment of the present application;

[0035] FIG10 is a plan view of a light emitting device provided in an embodiment of the present application;

[0036] FIG11 is a schematic cross-sectional view of the light emitting device in FIG10 along section line CC;

[0037] FIG12 is another cross-sectional schematic diagram of a light emitting device provided in an embodiment of the present application;

[0038] FIG13 is another plan view of a light emitting device provided in an embodiment of the present application;

[0039] FIG14 is another plan view of a light emitting device provided in an embodiment of the present application;

[0040] FIG15 is another plan view of a light emitting device provided in an embodiment of the present application;

[0041] FIG16 is another plan view of a light emitting device provided in an embodiment of the present application;

[0042] FIG17 is a cross-sectional view of the light emitting device in FIG16 along section line BB;

[0043] FIG18 is another plan view of a light emitting device provided in an embodiment of the present application;

[0044] FIG19 is another plan view of a light emitting device provided in an embodiment of the present application;

[0045] FIG20 is another plan view of a light emitting device provided in an embodiment of the present application;

[0046] FIG21 is another plan view of a light emitting device provided in an embodiment of the present application;

[0047] FIG22 is another plan view of a light emitting device provided in an embodiment of the present application;

[0048] FIG23 is another plan view of the light-emitting device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0049] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequential order. It should be understood that the data used in this way can be interchangeable where appropriate, so that the embodiments of the present application described herein can be implemented in a sequence other than those illustrated or described herein. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device comprising a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0050] As mentioned in the background technology, the OLED light-emitting device in the related art is prone to the situation where some areas cannot emit light. The applicant has found through research that the reason for this situation is that: in the process of producing the substrate of the OLED light-emitting device, film formation, dry etching, wet etching and other photolithography technologies are required. Among them, inorganic dielectric layers, such as silicon oxide and silicon nitride, require dry etching technology. Dry etching gases, such as CF4+O2 or SF6+Ar, are used to form highly active electrons, atoms, molecules, ions and free radicals through plasma discharge to etch the inorganic dielectric layer. The dry etching process has the advantages of anisotropy, high etching rate and good selectivity, so it has a wide range of applications. The plasma generated in the dry etching process requires two electrode plates to discharge. Since the surface of the substrate has a metal film layer (such as AlMo, AlTi, Cu, ITO, AZO), these metals will affect the electric field strength between the electrode plates, and the periphery of the pattern in the substrate contains a large piece of metal. The large piece of metal on the periphery is prone to accumulate static electricity. When the static electricity accumulates to a certain level, abnormal discharge will occur between the large piece of metal and the adjacent lead during the dry etching process. During the dry etching process, abnormal discharge occurs, causing the inorganic dielectric layer to be broken down by static electricity, making the metals above and below the inorganic dielectric layer easily short-circuited, affecting the light-emitting device. Figure 1 is a schematic diagram of a light-emitting device. For example, referring to Figure 1, abnormal discharge occurs between the cathode Pad 2 and the adjacent anode lead 3. The electrostatic discharge path 6 is shown in Figure 1, and the upper inorganic dielectric layer 5 is broken down. When the cathode metal 4 is evaporated on the upper layer of the inorganic dielectric layer 5, it will cause the first anode lead 3 to short-circuit with the cathode metal 4, and the light-emitting area corresponding to the anode connected to the anode lead 3 will emit abnormal light.

[0051] The present application provides a light-emitting device. FIG2 is a top view of a light-emitting device provided in the present application. FIG3 is a cross-sectional view of the light-emitting device in FIG2 along section line AA. FIG4 is a top view of another light-emitting device provided in the present application. Referring to FIG2 to FIG4 and FIG11, the light-emitting device includes:

[0052] A substrate 10 includes a light-emitting region 11 and a non-light-emitting region 12 disposed on one side of the light-emitting region 11. The non-light-emitting region 12 of the substrate 10 is provided with a bridging conductive block 100 and an electrode lead 40. An insulating layer 70 is provided on a side of the bridging conductive block 100 and the electrode lead 40 away from the substrate 10. The insulating layer 70 covers a portion of the electrode lead 40 and the bridging conductive block 100.

[0053] The non-luminescent area 12 of the substrate 10 is further provided with a dummy lead 50;

[0054] The dummy lead 50 is disposed adjacent to the bonding conductive block 100 , and the dummy lead 50 surrounds or partially surrounds the bonding conductive block 100 .

[0055] The insulating layer 70 is an inorganic layer and needs to be made using a dry etching process. The light-emitting area 11 of the substrate 10 is used to set a light-emitting unit. The light-emitting area 11 may include one, two or more light-emitting units. The light-emitting unit may be an OLED light-emitting unit. The light-emitting unit may include a first electrode 61, a light-emitting layer 63 and a second electrode 62 arranged in a stacked manner. The first electrode 61 is an anode and the second electrode 62 is a cathode, or the first electrode 61 is a cathode and the second electrode 62 is an anode. The electrode lead 40 can be electrically connected to the first electrode 61. The overlapping conductive block 100 is a conductive structure that is prone to abnormal discharge between the electrode lead 40 during the dry etching process of the insulating layer 70. The overlapping conductive block 100 can be a larger conductive block in the non-light-emitting area 12. During the dry etching process of the insulating layer 70, the larger overlapping conductive block 100 is prone to abnormal discharge between the electrode lead 40 and the insulating layer 70, breaking through the insulating layer 70. Exemplarily, the ratio of the width of the overlapping conductive block 100 to the width of the electrode lead 40 is greater than the first preset value, or the ratio of the length of the overlapping conductive block 100 to the length of the electrode lead 40 is greater than the first preset value, or the ratio of the area of ​​the overlapping conductive block 100 to the area of ​​the electrode lead 40 is greater than the second preset value.

[0056] The dummy lead 50 is a suspended lead, that is, the dummy lead 50 does not receive electrical signals. The dummy lead 50 can be made of the same material as the electrode lead 40. For example, both can be made of metal. The dummy lead 50 surrounds the overlapping conductive block 100. The dummy lead 50 partially surrounds the overlapping conductive block 100, that is, the dummy lead 50 is adjacent to a portion of the overlapping conductive block 100.

[0057] When the virtual lead 50 surrounds the overlapping conductive block 100, on the one hand, the virtual lead 50 can block static charge, prevent static charge from being transmitted from the edge of the light-emitting device to the overlapping conductive block 100, reduce the accumulation of static charge in the overlapping conductive block 100, and avoid abnormal discharge; on the other hand, the virtual lead 50 can shield the overlapping conductive block 100 and the electrode lead 40. When the overlapping conductive block 100 discharges abnormally, abnormal discharge occurs preferentially with the virtual lead 50, avoiding abnormal discharge between the overlapping conductive block 100 and the electrode lead 40, causing the insulating layer 70 adjacent to the electrode lead 40 to be broken down, causing the conductive film layer above the insulating layer 70 to short-circuit with the electrode lead 40, affecting the light-emitting device.

[0058] When the virtual lead 50 partially surrounds the overlapping conductive block 100: the virtual lead 50 can be set between the overlapping conductive block 100 and the electrode lead 40, and shield the overlapping conductive block 100 and the electrode lead 40, so that when the overlapping conductive block 100 needs to discharge abnormally, abnormal discharge will occur with the virtual lead 50 first; the virtual lead 50 can also be set on the side of the overlapping conductive block 100 away from the electrode lead 40, to block static charge, prevent static charge from being transmitted from the edge of the light-emitting device to the overlapping conductive block 100, reduce the accumulation of static charge in the overlapping conductive block 100, and avoid abnormal discharge of the overlapping conductive block 100 during the dry etching process of the insulating layer 70; the virtual lead 50 can also be partially set between the overlapping conductive block 100 and the electrode lead 40, and partially set on the side of the overlapping conductive block 100 away from the electrode lead 40.

[0059] The non-luminous area 12 of the light-emitting device substrate 10 of the embodiment of the present application is provided with a lap conductive block 100 and an electrode lead 40. An insulating layer 70 is provided on the side of the lap conductive block 100 and the electrode lead 40 away from the substrate 10. The insulating layer 70 covers a portion of the electrode lead 40 and the lap conductive block 100. The non-luminous area 12 of the substrate 10 is also provided with a virtual lead 50. The virtual lead 50 is arranged adjacent to the lap conductive block 100, and the virtual lead 50 surrounds or partially surrounds the lap conductive block 100. The virtual lead 50 can block the static charge entering from the edge of the light-emitting device, prevent the static charge from being transmitted from the edge of the light-emitting device to the overlapping conductive block 100, reduce the accumulation of static charge in the overlapping conductive block 100, and reduce the occurrence of abnormal discharge. The virtual lead 50 can also shield the overlapping conductive block 100 and the electrode lead 40, so that when the overlapping conductive block 100 needs to discharge abnormally, abnormal discharge will occur with the virtual lead 50 first; therefore, by setting the virtual lead 50 in the embodiment of the present application, abnormal discharge during the dry etching process of the insulating layer 70 can be avoided, which may cause the insulating layer 70 on the surface of the electrode lead 40 to be broken down, and avoid the short circuit between the electrode lead 40 and the conductive film layer on the insulating layer 70, which may cause abnormal light emission.

[0060] For example, the ratio of the dimension of the overlapping conductive block 100 along a preset direction to the length or width of the electrode lead 40 is greater than or equal to 10, or the ratio of the area of ​​the overlapping conductive block 100 to the area of ​​the electrode lead 40 is greater than or equal to 5.

[0061] Wherein, the preset direction may be the width direction of the overlapping conductive block 100, in which case the dimension of the overlapping conductive block 100 along the preset direction is the width b of the overlapping conductive block 100; the preset direction may also be the length direction of the overlapping conductive block 100, in which case the dimension of the overlapping conductive block 100 along the preset direction is the length a of the overlapping conductive block 100. A overlapping conductive block 100 having a length greater than 10 times the length or width of the electrode lead 40, a width greater than 10 times the length or width of the electrode lead 40, or an area greater than 5 times the area of ​​the electrode lead 40 is more prone to static electricity accumulation and abnormal discharge. Providing a dummy lead 50 adjacent to the overlapping conductive block 100 can better prevent abnormal discharge from causing breakdown of the insulating layer 70 on the surface of the electrode lead 40.

[0062] For example, the bridging conductive block 100 includes a bridging sub-region 20 and a lead sub-region 30 , and the lead sub-region 30 is disposed on a side of the bridging sub-region 20 away from the light-emitting region 11 ;

[0063] The insulating layer 70 includes a through hole 71 , and the through hole 71 exposes at least a portion of the overlapping sub-region 20 ;

[0064] A second electrode 62 is provided on a side of the insulating layer 70 away from the substrate 10 . The second electrode 62 extends from the light-emitting region 11 to the non-light-emitting region 12 and is in electrical contact with the overlapping sub-region 20 .

[0065] The light emitting area 11 of the substrate 10 is further provided with a first electrode 61 , which is electrically connected to the electrode lead 40 .

[0066] For example, the overlapping conductive block 100 is a second electrode overlapping pin 121 (see FIG21 ), which is used to electrically connect to the second electrode 62, and the lead sub-region 30 is electrically connected to the overlapping sub-region 20. The lead sub-region 20 and the electrode lead 40 are both used to connect to an external circuit, receive a driving signal transmitted by the external circuit, and transmit the driving signal to the second electrode 62 and the first electrode 61, respectively, thereby driving the light-emitting unit to emit light. The overlapping sub-region 20 has a large area and is prone to accumulate static charge. When the insulating layer 70 is dry-etched, abnormal discharge occurs easily between the overlapping sub-region 30 and the electrode lead 40, resulting in the insulation layer 70 between the electrode lead 40 and the overlapping sub-region 30 being broken down, causing the second electrode 62 to short-circuit with the electrode lead 40, making it impossible for the electrode lead 40 to transmit the driving signal of the first electrode 61, affecting the light-emitting unit. The virtual lead 50 is provided adjacent to the overlapping conductive block 100, which can better prevent abnormal discharge from causing the insulating layer 70 on the surface of the electrode lead 40 to be broken down, avoid the second electrode 62 and the electrode lead 40 from being short-circuited, and ensure normal light emission of the light-emitting device.

[0067] Figure 5 is a top view of another light-emitting device provided in an embodiment of the present application, Figure 6 is a top view of another light-emitting device provided in an embodiment of the present application, and Figure 7 is a top view of another light-emitting device provided in an embodiment of the present application. For example, referring to Figures 2-7 , the dummy lead 50 is disposed between the bonding conductive block 100 and the electrode lead 40, and / or the dummy lead 50 is disposed on a side of the bonding conductive block 100 away from the electrode lead 40.

[0068] For example, the virtual lead 50 is arranged between the overlapping conductive block 100 and the electrode lead 40, and plays a shielding role for the overlapping conductive block 100 and the electrode lead 40, so that when the overlapping conductive block 100 needs to discharge abnormally, abnormal discharge occurs preferentially with the virtual lead 50. When the virtual lead 50 is arranged on the side of the overlapping conductive block 100 away from the overlapping lead, it plays a role in blocking static charge, preventing static charge from being transmitted from the edge of the light-emitting device to the overlapping conductive block 100, reducing the accumulation of static charge in the overlapping conductive block 100, and avoiding abnormal discharge. The virtual lead 50 can also be partially arranged between the overlapping conductive block 100 and the electrode lead 40, and partially arranged on the side of the overlapping conductive block 100 away from the electrode lead 40, which can not only play a role in blocking static charge, but also play a shielding role, further avoiding the occurrence of abnormal discharge.

[0069] For example, referring to FIG2-FIG7, the virtual lead 50 is provided between the overlapping conductive block 100 and the electrode lead 40, and the virtual lead 50 completely separates the overlapping conductive block 100 from the electrode lead 40 (FIG. 2); or,

[0070] The virtual lead 50 includes a first sub-line 51 and a second sub-line 52. The first sub-line 51 is arranged between the overlapping conductive block 100 and the electrode lead 40. The first sub-line 51 completely separates the overlapping conductive block 100 from the electrode lead 40. The second sub-line 52 is connected to the first sub-line 51 and is arranged on the side of the overlapping conductive block 100 away from the electrode lead 40 (Figures 5 and 6); or,

[0071] The dummy lead 50 is disposed on a side of the overlapping conductive block 100 away from the electrode lead 40 , and extends from the overlapping conductive block 100 toward the electrode lead 40 , and a portion of the dummy lead 50 is disposed adjacent to the electrode lead 40 ( FIG. 7 ).

[0072] For example, referring to FIG2 , the electrode lead 40 is in the shape of a broken line, and multiple sides of the overlapping conductive block 100 are adjacent to the electrode lead 40. The virtual lead 50 can have the same shape as the electrode lead 40. Exemplarily, the virtual lead 50 is parallel to the electrode lead 40 and half-wraps the overlapping conductive block 100, completely separating the electrode lead 40 from the overlapping conductive block 100. This allows the overlapping conductive block 100 to preferentially discharge with the virtual lead 50 when abnormal discharge occurs. In addition, referring to FIG2 , the virtual lead 50 can extend from between the electrode lead 40 and the overlapping conductive block 100 toward the edge of the light-emitting device, obstructing the portion of the electrode lead 40 that is not adjacent to the overlapping conductive block 100, thereby preventing static charge from being transmitted from the edge of the light-emitting device to the electrode lead 40.

[0073] 5 and 6 , the virtual lead 50 can surround the overlapping conductive block 100 on three sides, the first sub-line 51 is adjacent to the edge of the overlapping conductive block 100 adjacent to the electrode lead 40, and the second sub-line 52 is adjacent to the edge of the overlapping conductive block 100 away from the electrode lead 40. The first sub-line 51 can isolate the electrode lead 40 and the overlapping conductive block 100, and the second sub-line 52 can block static charge from being transmitted from the edge of the light-emitting device to the electrode lead 40.

[0074] Referring to Figure 7, the virtual lead 50 is arranged on the side of the overlapping conductive block 100 away from the electrode lead 40. The virtual lead 50 wraps the edge of the overlapping conductive block 100 that is not adjacent to the electrode lead 40, and the virtual lead 50 blocks the gap between the overlapping conductive block 100 and the electrode lead 40. This arrangement allows the virtual lead 50 to better block static charge from being transmitted from the edge of the light-emitting device to the overlapping conductive block 100, thereby avoiding abnormal discharge of the overlapping conductive block 100.

[0075] In addition, when the virtual lead 50 is arranged on the side of the overlapping conductive block 100 away from the electrode lead 40, the distance between the virtual lead 50 and the overlapping conductive block 100 can be smaller than the distance between the overlapping conductive block 100 and the adjacent electrode lead 40. In this way, while the virtual lead 50 blocks the charge, when abnormal discharge occurs in the overlapping conductive block 100, the abnormal discharge preferentially occurs between the overlapping conductive block 100 and the virtual lead 50.

[0076] For example, continuing to refer to Figure 5, the second sub-line 52 extends from the overlapping conductive block 100 toward the electrode lead 40, and part of the second sub-line 52 is adjacent to the electrode lead 40, that is, the second sub-line 52 blocks the gap between the overlapping conductive block 100 and the electrode lead 40, which can better block the static charge from being transmitted from the edge of the light-emitting device to the overlapping conductive block 100, thereby avoiding abnormal discharge of the overlapping conductive block 100.

[0077] In addition, referring to FIG. 4 , when the virtual lead 50 surrounds the overlapping conductive block 100 , the virtual lead 50 may also extend from the overlapping conductive block 100 toward the electrode lead 40 to block the gap between the overlapping conductive block 100 and the electrode lead 40 .

[0078] For example, the line width of the dummy wire 50 is greater than or equal to 1 μm.

[0079] For example, if the virtual lead 50 has a too small width, it may be easily broken during abnormal discharge and may not effectively shield the overlapping conductive block 100 and the electrode lead 40. By setting the virtual lead 50 to have a width greater than or equal to 1 μm, the virtual lead 50 can effectively shield the overlapping conductive block 100 and the electrode lead 40, preventing the virtual lead 50 from being broken. For example, the virtual lead 50 may have a width greater than or equal to 5 μm.

[0080] Figure 8 is a cross-sectional view of another light-emitting device provided in an embodiment of the present application. For example, referring to Figure 8, the longitudinal section of the virtual lead 50, the first electrode and the overlapping conductive block 20 is a trapezoid, wherein the longitudinal section is perpendicular to the extension direction of the virtual lead, the length of the first bottom side of the trapezoid away from the substrate 10 is less than the length of the second bottom side adjacent to the substrate, and the angle B between the waist of the trapezoid and the second bottom side is less than or equal to 70°.

[0081] For example, the longitudinal section of the virtual lead 50, the first electrode and the overlapping conductive block 20 is a right trapezoid, and the angle B between the waist of the trapezoid and the second bottom side is less than 70°, that is, the Taper angle of the virtual lead 50, the first electrode and the overlapping conductive block 20 is less than or equal to 70°, and is exemplarily less than or equal to 60°, such as 45°-60°. This arrangement ensures that there is no sharp angle between the side and bottom surfaces of the virtual lead 50, the first electrode and the overlapping conductive block 20. When the overlapping conductive block 100 discharges, the virtual lead 50 is not easily broken down, and can better shield the overlapping conductive block 100 and the electrode lead 40.

[0082] FIG9 is a schematic diagram of a non-luminous area provided in an embodiment of the present application. Referring to FIG9 , chamfers 80 are provided at the corners of the dummy leads 50 .

[0083] This setting can reduce the presence of sharp corners and avoid penetration at sharp corners.

[0084] For example, the radius of the chamfer 80 is greater than or equal to 0.5 μm, which can better prevent electrostatic breakdown.

[0085] For example, with continued reference to FIG. 8 , the thickness of the insulating layer 70 is less than or equal to 500 nm.

[0086] By providing dummy leads, the embodiment of the present application can prevent the insulation layer 70 from being broken down and affecting the signal transmission of the electrode lead 40, so that the insulation layer 70 can be made thinner, reducing the thickness of the entire light-emitting device. For example, the thickness of the insulation layer 70 can be less than or equal to 300 nm.

[0087] An embodiment of the present application provides a light-emitting device. FIG10 is a plan view of a light-emitting device provided in an embodiment of the present application. FIG11 is a cross-sectional view of the light-emitting device along section line CC in FIG10 . Referring to FIG10 and FIG11 , the light-emitting device includes:

[0088] A substrate 10, comprising a light-emitting region 11 and a non-light-emitting region 12 disposed on at least one side of the light-emitting region 11;

[0089] The light-emitting region 11 includes a first electrode 61, a light-emitting layer 63, and a second electrode 62 stacked in sequence on one side of the substrate 10. The first electrode 61 is disposed on a side of the light-emitting layer 63 adjacent to the substrate 10.

[0090] The non-luminous area 12 includes an electrically breakdown weak area 120, which includes a conductive structure 90 arranged on the surface of the substrate 10. The conductive structure 90 and the first electrode 61 are arranged on the same side of the substrate 20, and at least part of the film layer in the luminous layer 63 covers the conductive structure 90 of the electrically breakdown weak area 120.

[0091] The light-emitting layer 63 includes an organic light-emitting layer. Applying a voltage to the first electrode 61 and the second electrode 62 can cause the organic light-emitting layer to emit light. The conductive structure 90 in the electrically weak breakdown region 120 is easily broken down by the breakdown electric field. For example, the conductive structure 90 can be a relatively narrow lead, and the electrically weak breakdown region 120 can be a region in the non-light-emitting region 12 where a relatively narrow lead is located.

[0092] The light-emitting layer 63 may further include organic layers such as an electron injection layer, an electron transport layer, a hole blocking layer, a hole injection layer, a hole transport layer, and a hole blocking layer. At least one of the electron injection layer, the electron transport layer, the hole blocking layer, the hole injection layer, the hole transport layer, and the hole blocking layer covers the conductive structure 90 in the breakdown weak area 120. The light-emitting layer 63 can play a certain role in weakening the breakdown electric field, thereby preventing the breakdown electric field from being too strong and causing the conductive structure 90 in the breakdown weak area 120 to be broken down. The embodiment of the present application increases the coverage of the light-emitting layer 63, which can be achieved by simply increasing the opening of the mask used for vapor deposition of the light-emitting layer 63, thereby not increasing the difficulty of manufacturing the light-emitting device.

[0093] In the embodiment of the present application, by setting at least a portion of the film layer in the light-emitting layer 63 to cover the conductive structure 90 of the electrical breakdown weak area 120, the light-emitting layer 63 can play a certain weakening role in the breakdown electric field, thereby preventing the breakdown electric field from being too strong and causing the conductive structure 90 of the electrical breakdown weak area 120 to break down, and preventing external objects from discharging and damaging the light-emitting device. Since the embodiment of the present application only increases the coverage range of the light-emitting layer 63, it will not increase the difficulty of preparing the light-emitting device.

[0094] It should be noted that the second electrode is not shown in FIG10 , which is not a limitation of the present application.

[0095] For example, the total thickness of the film layer covering the conductive structure 90 in the light emitting layer 63 is greater than or equal to 10 nm.

[0096] For example, the thicker the organic film layer covering the conductive structure 90, the stronger the weakening effect of the organic film layer on the breakdown electric field. By setting the total thickness of the film layer covering the conductive structure 90 in the light-emitting layer 63 to be greater than or equal to 10 nm, the breakdown electric field acting on the conductive structure 90 can be weakened to a large extent, thereby preventing the conductive structure 90 from being broken down.

[0097] FIG12 is a schematic cross-sectional view of another light-emitting device provided in an embodiment of the present application. For example, referring to FIG12 , the light-emitting layer 63 includes a first organic functional layer 631, an organic light-emitting layer 632, and a second organic functional layer 633, which are sequentially stacked. The first organic functional layer 631 is disposed on a side of the organic light-emitting layer 632 adjacent to the first electrode 61. The first organic functional layer 631 includes at least one of a first carrier injection layer, a first carrier transport layer, and a second carrier blocking layer. The second organic functional layer 633 includes at least one of a second carrier injection layer, a second carrier transport layer, and a first carrier blocking layer.

[0098] At least one of the first carrier injection layer, the first carrier transport layer, the second carrier blocking layer, the organic light emitting layer 632 , the second carrier injection layer, the second carrier transport layer and the first carrier blocking layer covers the conductive structure 90 .

[0099] When the first electrode 61 is a cathode and the second electrode 62 is an anode, the first carriers are electrons and the second carriers are holes. When the first electrode 61 is an anode and the second electrode 62 is a cathode, the first carriers are holes and the second carriers are electrons. The conductive structure 90 may be covered by one, two, or more of the following: a first carrier injection layer, a first carrier transport layer, a second carrier blocking layer, an organic light-emitting layer 632, a second carrier injection layer, a second carrier transport layer, and a first carrier blocking layer.

[0100] FIG13 is a plan view of another light-emitting device provided in an embodiment of the present application. For example, referring to FIG12 and FIG13 , the first electrode 61 includes at least two electrode blocks 611 ; each light-emitting region 11 includes an electrode block 611 ;

[0101] The non-luminescent area 12 includes at least two electrode leads 40, and the electrode leads 40 are electrically connected to the electrode blocks 611 in a one-to-one correspondence;

[0102] The electrode lead 40 includes a first lead segment 91 , and the line width of the first lead segment 91 is smaller than a preset value;

[0103] The conductive structure 90 includes a predetermined area of ​​the first lead segment 91 , wherein the predetermined area is an area of ​​the first lead segment 91 covered by a vertical projection of the second electrode 62 on the substrate 10 .

[0104] For example, one end of the electrode lead 40 is electrically connected to the electrode block 611, and the other end is connected to the driving circuit, for transmitting the driving signal sent by the driving circuit to the electrode block 611. The preset area can be a partial area of ​​the first lead segment 91, or the entire area of ​​the first lead segment 91.

[0105] Along the path where the electrode lead 40 extends from the electrode block 611 to the driver circuit, there are areas with limited wiring space. Consequently, the electrode lead 40 includes a first lead segment 91 with a relatively small line width. When an external object discharges into the light-emitting device, generating a breakdown electric field, the charge easily acts on the first lead segment 91 through the second electrode 62. The predetermined area covered by the second electrode 62 is easily broken down by the breakdown electric field. The area where the predetermined areas of the multiple first lead segments 91 are located is the electrically weak breakdown area 120. By providing at least a portion of the light-emitting layer 63 to cover the predetermined areas of the first lead segments 91, the breakdown electric field can be prevented from penetrating the first lead segments 91.

[0106] For example, the preset value is less than or equal to 50 μm. For example, the preset value may be 45 μm, 40 μm, or 30 μm.

[0107] Figure 14 is a plan view of another light-emitting device provided in an embodiment of the present application, Figure 15 is a plan view of another light-emitting device provided in an embodiment of the present application, Figure 16 is a plan view of another light-emitting device provided in an embodiment of the present application, and Figure 17 is a cross-sectional view of the light-emitting device in Figure 16 taken along section line BB. For example, referring to Figures 14-17 , the electrode lead 40 further includes a second lead segment 92 , the line width of the second lead segment 92 being greater than the line width of the first lead segment 91 ; the non-luminescent region 12 further includes a second electrode bonding pin 121 , and both the second electrode bonding pin 121 and the second lead segment 92 are located on the side of the first lead segment 91 away from the luminescent region 11 ;

[0108] The second electrode 62 includes a main body area 621 and a overlapping area 622. The main body area 621 is electrically connected to the overlapping area 622. The main body area 621 extends from the light-emitting area 11 to a preset area of ​​the first lead segment 91 adjacent to one end of the second lead segment 92, and the overlapping area 622 covers the second electrode overlapping pin 121; or, referring to Figures 16 and 17, the second electrode 62 extends as a whole from the light-emitting area 11 to the boundary of the second electrode overlapping pin 121 away from the light-emitting area 11, the second electrode 62 covers the second electrode overlapping pin 121 and at least part of the second lead segment 92, and the second lead segment 92 covered by the second electrode 62 includes a discharge tip.

[0109] Referring to Figures 12, 14, and 15, an insulating layer is provided on the side of the second lead segment 92 away from the substrate 10. If the second electrode 62 covers the insulating layer 70 on the second lead segment 92, when an external object discharges, the charge can easily act on the second lead segment 92 through the second electrode 62 and the insulating layer 70. By setting only the overlapping region 622 of the second electrode 62 to cover the second electrode overlapping pin 121, and the main region 621 extending only to the predetermined area of ​​the first lead segment 91 adjacent to the end of the second lead segment 92, that is, the second electrode 62 does not cover the second lead segment 92, it can prevent the charge from acting on the second lead segment 92 through the second electrode 62, thereby reducing the risk of the second lead segment 92 being broken down. In this embodiment, the boundary of the second electrode 62 is located at the end of the first lead segment 91 adjacent to the second lead segment 92, and the electrical breakdown weak zone 120 is only the area where the second electrode 62 covers the first lead segment 91, thereby reducing the area of ​​the electrical breakdown weak zone 120.

[0110] 16 and 17 , when the second electrode 62 extends as a whole to the overlapping area 622 away from the boundary of the light-emitting area 11, the second electrode 62 is easier to prepare, and by setting the second lead segment 92 with a discharge tip 9222, the discharge tip 9222 can release the charge, thereby improving the anti-breakdown capability of the second lead segment 92, thereby preventing the second lead segment 92 from being punctured when the second electrode 62 introduces the charge, and the charge is preferentially released at the discharge tip 9222, thereby better preventing the first lead segment 91 and the light-emitting area 11 from being punctured.

[0111] In addition, the width of the second lead segment 92 may be greater than 50 μm, thereby ensuring that the second lead segment 92 has a stronger anti-puncture capability.

[0112] FIG18 is a plan view of another light-emitting device provided in an embodiment of the present application, and FIG19 is a plan view of another light-emitting device provided in an embodiment of the present application. For example, the second electrode strapping pins 121 are provided on both sides of the area where the second lead segment 92 is located (FIGS. 14 and 16), and the second electrode strapping pins 121 are provided adjacent to the first lead segment 91, or the second electrode strapping pins 121 are provided in an area between the light-emitting area 11 and the electrode lead 40 is not provided (FIGS. 15 and 18), or the second electrode strapping pins 121 are provided in an area between the light-emitting area 11 and the electrode lead 40 where the line width is greater than a preset value (FIG. 19).

[0113] For example, the absence of the first lead segment 91 between the second electrode bonding pin 121 and the light-emitting area 11 may include the following situations:

[0114] Referring to Figure 15, the second electrode strapping pin 121 can be arranged between the first part electrode lead 41 and the second part electrode lead 42; wherein, the first lead segment 91 of the first part electrode lead 41 extends from the first sub-non-luminous area to the third sub-luminous area, and the first lead segment 91 of the second part electrode lead 42 extends from the second sub-non-luminous area to the third sub-non-luminous area. The first sub-non-luminous area is located on the first side of the luminous area 11, the second sub-non-luminous area is located on the second side of the luminous area 11, and the third sub-non-luminous area is located on the third side of the luminous area 11. The first side and the second side are arranged opposite to each other, and the third side is the side where the second lead segment 92 is located.

[0115] Referring to Figure 18, the second electrode strap pin 121 can also be set in a preset non-luminous area, which is adjacent to the luminous area 11, and no electrode lead 40 is set in the entire area (for example, the electrode lead 40 is set on the left, right and bottom sides of the area where all the luminous areas 11 are located, and the second electrode strap pin 121 can be set on the upper side of the area where all the luminous areas 11 are located).

[0116] For example, the first and second sides of the light-emitting region 11 are both adjacent to the third side. The first electrode 61 may include multiple electrode blocks 611 arranged in an array. The electrode leads 40 connected to the electrode blocks 611 adjacent to the first sub-non-light-emitting region extend from the first sub-non-light-emitting region to the third sub-non-light-emitting region, and the electrode leads 40 connected to the electrode blocks 611 adjacent to the second sub-non-light-emitting region extend from the second sub-non-light-emitting region to the third sub-non-light-emitting region. For example, the first sub-non-light-emitting region may be the non-light-emitting region to the left of the light-emitting region 11, the second sub-non-light-emitting region may be the non-light-emitting region to the right of the light-emitting region 11, and the third sub-non-light-emitting region may be the non-light-emitting region below the light-emitting region 11.

[0117] For example, referring to FIG15 , when the second electrode strapping pin 121 is disposed between the first portion of the electrode lead 41 and the second portion of the electrode lead 42, the second electrode strapping pin 121 is farther away from the first lead segment 91, thereby preventing electric charge from acting on the first lead segment 91 through the second electrode strapping pin 121, further preventing the first lead segment 91 from being broken down. When the second electrode strapping pin 121 is disposed between the first portion of the electrode lead 41 and the second portion of the electrode lead 42, the second electrode strapping pin 121 can be disposed between the second lead segments 92, or between the first lead segments 91, or partially between the first lead segments 91 and partially between the second lead segments 92. The second electrode strapping pin 121 can have a wider range of position settings, thereby reducing the difficulty of designing and manufacturing the light-emitting device. In addition, the light-emitting layer 63 does not cover the second electrode strap pin 121. The boundary between the light-emitting layer 63 and the second electrode strap pin 121 is located on the side of the second electrode strap pin 121 adjacent to the light-emitting area 11. When the second electrode strap pin 121 is arranged between the first part electrode lead 41 and the second part electrode lead 42, there is no first lead segment 91 on the side of the second electrode strap pin 121 adjacent to the light-emitting area 11. Therefore, when the light-emitting layer 63 is manufactured, the boundary position requirements of the light-emitting layer 63 are relatively low, which can reduce the process difficulty.

[0118] In addition, when the second electrode overlapping pin 121 is arranged between the second lead segment 92 of the first part electrode lead 41 and the second lead segment 92 of the second part electrode lead 42, the second electrode 62 can be arranged to include a main area 621 and a overlapping area 622, so that the area of ​​the breakdown weak area 120 can be reduced, and the boundaries of the light-emitting layer 63 and the second electrode 62 are both close to the light-emitting area 11, and the boundary of the light-emitting layer 63 is far away from the boundary of the light-emitting device, that is, it is also far away from the boundary of the packaging area, which can better avoid the corrosion of water and oxygen to the light-emitting layer 63, and the reliability of the light-emitting device is better.

[0119] Referring to Figure 16, when the second electrode strapping pins 121 are arranged on both sides of the area where the second lead segment 92 is located, the second electrode 62 can be arranged to extend as a whole to the boundary of the second electrode strapping pin 121 away from the light-emitting area 11, and the second lead segment 92 is arranged to have a discharge tip 9222. In this way, the charge is preferentially released at the discharge tip 9222, which can better avoid the first lead segment 91 from being broken down, and the second electrode 62 is easier to prepare.

[0120] In addition, referring to Figure 18, when the second electrode strapping pin 121 is arranged in an area between the light-emitting area 11 and the electrode lead 40, the setting position of the second electrode strapping pin 121 is more flexible, and the second electrode 62 can extend as a whole to the edge of the second electrode strapping pin 121 away from the light-emitting area 11. The second electrode 62 can also include a main body area and a strapping area, and only the strapping area can cover the second electrode strapping pin 121. The setting method of the second electrode 62 is also more flexible.

[0121] Referring to Figure 19, when the second electrode bonding pin 121 is arranged in an area where the distance between the boundary of the light-emitting area 11 and the electrode lead 40 is greater than a preset value, the electrode lead 40 between the second electrode bonding pin 121 and the light-emitting area 11 has a strong ability to resist electrical breakdown. When the second electrode 62 covers the electrode lead 40 on the path extending from the light-emitting area 11 to the second electrode bonding pin 121, no electrical breakdown weak area will be formed, and the setting of the second electrode bonding pin 121 and the second electrode 62 can be more flexible.

[0122] For example, referring to Figures 16 and 17, the second lead segment 92 covered by the second electrode 62 includes a main body 921 and a discharge portion 922 located on at least one side of the main body 921 along the width direction. The main body 921 and the discharge portion 922 are electrically connected, and the discharge portion 922 has at least one discharge tip 9222; the tip of the discharge tip 9222 is toward the side of the second lead segment 922 away from the substrate 10.

[0123] For example, discharge portions 922 can be provided on both sides of the main body 921 to enhance discharge capability and improve breakdown resistance. The cross-sectional shape of the main body 921 can be set to a trapezoidal shape, with the base angle 9211 of the trapezoid being smaller than a predetermined angle. The discharge portions 922 can be triangular, with the top angle of the triangle forming a discharge tip 9222. Furthermore, the discharge portion 922 can have other shapes, for example, having multiple sharp corners, each of which forms a discharge tip 9222.

[0124] FIG20 is a plan view of another light-emitting device provided by an embodiment of the present application. For example, referring to FIG20 , the light-emitting layer 63 extends from the light-emitting region 11 to the electrically breakdown weak region 120. At the same boundary of the light-emitting region 11, the boundary of the light-emitting layer 63 is further away from the boundary of the light-emitting region 11 than the preset boundary of the electrically breakdown weak region 120, where the preset boundary is the boundary where the electrically breakdown weak region 120 is away from the light-emitting region 11. That is, the light-emitting layer 63 not only covers the electrically breakdown weak region 120, but also covers a portion of the region adjacent to the electrically breakdown weak region 120 and further away from the light-emitting region 11 than the electrically breakdown weak region 120. This arrangement allows the light-emitting layer 63 to better reduce the breakdown electric field at the edge of the electrically breakdown weak region 120, preventing the conductive structure 90 at the edge of the electrically breakdown weak region 120 from being broken down by the breakdown electric field.

[0125] It should be noted that the light-emitting area 11 includes multiple boundaries, and the boundary of the light-emitting layer 63 may be further away from the boundary of the light-emitting area 11 at one, two, or multiple boundaries of the light-emitting area 11 relative to the preset boundary of the electrically breakdown weak area 120. For example, referring to FIG. 18 , the left boundary of the light-emitting layer 63 may be further away from the left boundary of the light-emitting area 11 relative to the left boundary of the electrically breakdown weak area 120, the right boundary of the light-emitting layer 63 may be further away from the right boundary of the light-emitting area 11 relative to the right boundary of the electrically breakdown weak area 120, and the bottom boundary of the light-emitting layer 63 may be further away from the bottom boundary of the light-emitting area 11 relative to the bottom boundary of the electrically breakdown weak area 120.

[0126] For example, the vertical projections of the second electrode 62 and the light-emitting layer 63 on the substrate 10 cover the light-emitting area 11, and at the same boundary of the light-emitting area 11, the boundary of the light-emitting layer 63, excluding the overlapped region, is further away from the boundary of the light-emitting area 11 than the boundary of the second electrode 62. For example, the boundary of the light-emitting layer 63 may also coincide with the boundary of the second electrode 62, i.e., the coverage area of ​​the light-emitting layer 63 is the same as the coverage area of ​​the second electrode 62. For another example, the boundary of the light-emitting area 63 may cover the first lead segment 91 of the electrode lead 40, or it may cover both the first lead segment 91 and a portion of the second lead segment 92.

[0127] For example, the conductive structure 90 in the area covered by the second electrode 62 is easily affected by the breakdown electric field introduced by the second electrode 62. The boundary of the light-emitting layer 63 is set to be farther away from the boundary of the light-emitting area 11 relative to the boundary of the second electrode 62, that is, the coverage range of the light-emitting layer 63 is larger than the coverage range of the second electrode 62, so that the light-emitting layer 63 can better weaken the breakdown electric field, thereby preventing the conductive structure 90 at the edge of the area covered by the second electrode 62 from being broken down by the breakdown electric field.

[0128] It should be noted that when the second electrode 62 includes a main region 621 and an overlapping region 622, the boundary of the second electrode 62 is closer to the boundary of the light-emitting region 11 than the boundary of the light-emitting layer 63. That is, the boundary of the main region 621 of the second electrode 62 is closer to the boundary of the light-emitting region 11 than the boundary of the light-emitting layer 63. In addition, the light-emitting region 11 includes multiple boundaries, and the boundary of the second electrode 62 may be closer to the boundary of the light-emitting region 11 than the boundary of the light-emitting layer 63 at one boundary, two boundaries, or multiple boundaries of the light-emitting region 11.

[0129] For example, referring to FIG. 12 , FIG. 13 and FIG. 17 , the non-light emitting region further includes an insulating layer 70 , and the insulating layer 70 covers the electrode lead 40 .

[0130] For example, the insulating layer 70 is disposed on the side of the electrode lead 40 away from the substrate 10 . In the electrical breakdown weak area 120 , the luminescent layer 63 covers the first lead segment 91 . The luminescent layer 63 is disposed on a layer of the insulating layer 70 away from the substrate 10 .

[0131] Figure 21 is a plan view of another light-emitting device provided in an embodiment of the present application. For example, referring to Figure 21, the non-light-emitting area 12 also includes a binding pin 200, which is arranged on the side of the second lead segment 92 away from the light-emitting area 11. One end of each second lead segment 92 is electrically connected to a binding pin 200, and the other end is electrically connected to the first lead segment 91.

[0132] For example, the binding pin 200 is used to bind the driving circuit, and the driving circuit inputs the driving signal to the electrode lead 40 and the second electrode strapping pin 121. The electrode lead 40 transmits the driving signal to the electrode block 611, and the second electrode strapping pin 121 transmits the driving signal to the second electrode 62, driving the light-emitting layer 63 to emit light.

[0133] The present invention provides a light-emitting device, which includes:

[0134] The substrate includes a light-emitting area and a non-light-emitting area arranged on one side of the light-emitting area.

[0135] The light emitting area includes a first electrode and a light emitting layer which are sequentially stacked and arranged on one side of the substrate. The first electrode is arranged on a side of the light emitting layer adjacent to the substrate.

[0136] The non-luminous area of ​​the substrate is provided with overlapping conductive blocks and electrode leads; an insulating layer is provided on the side of the overlapping conductive blocks and the electrode leads away from the substrate, and the insulating layer covers a part of the electrode leads and the overlapping conductive blocks.

[0137] The non-luminous area of ​​the substrate is also provided with a dummy lead or an electrically breakdown weak area.

[0138] In which, the virtual lead is arranged adjacent to the overlapping conductive block, and the virtual lead surrounds or partially surrounds the overlapping conductive block; the electrical breakdown weak area includes a conductive structure arranged on the surface of the substrate, the conductive structure and the first electrode are arranged on the same side of the substrate, and at least part of the film layer in the light-emitting layer covers the conductive structure of the electrical breakdown weak area.

[0139] Exemplarily, the ratio of the dimension of the overlapping conductive block along a preset direction to the width or length of the electrode lead is greater than or equal to 10, or the ratio of the area of ​​the overlapping conductive block to the area of ​​the electrode lead is greater than or equal to 5.

[0140] Exemplarily, the overlapping conductive block includes a overlapping sub-region and a lead sub-region, and the lead sub-region is arranged on the side of the overlapping sub-region away from the light-emitting region; the insulating layer includes a through hole, and the through hole exposes at least a portion of the overlapping sub-region; a second electrode is provided on the side of the insulating layer away from the substrate, and the second electrode extends from the light-emitting region to the non-light-emitting region and is in contact and electrically connected with the overlapping sub-region; the first electrode is electrically connected to the electrode lead.

[0141] Exemplarily, the virtual lead is arranged between the overlapping conductive block and the electrode lead, and / or the virtual lead is arranged on a side of the overlapping conductive block away from the electrode lead.

[0142] Exemplarily, the virtual lead is provided between the bridging conductive block and the electrode lead, and the virtual lead completely separates the bridging conductive block from the electrode lead; or,

[0143] The virtual lead includes a first sub-line and a second sub-line, wherein the first sub-line is arranged between the overlapping conductive block and the electrode lead, and the first sub-line completely separates the overlapping conductive block and the electrode lead, and the second sub-line is connected to the first sub-line and is arranged on a side of the overlapping conductive block away from the electrode lead; or

[0144] The virtual lead is arranged on a side of the overlapping conductive block away from the electrode lead, and the virtual lead extends from the overlapping conductive block toward the electrode lead, and a partial area of ​​the virtual lead is arranged adjacent to the electrode lead.

[0145] Exemplarily, when the virtual lead includes a first sub-line and a second sub-line, the second sub-line extends from the overlapping conductive block toward the electrode lead, and a partial area of ​​the second sub-line is adjacent to the electrode lead.

[0146] Exemplarily, the line width of the dummy lead is greater than or equal to 1 μm.

[0147] Exemplarily, the longitudinal sections of the virtual lead, the first electrode and the overlapping conductive block are respectively trapezoidal, wherein the longitudinal sections are perpendicular to the extension direction of the virtual lead, the length of the first bottom side of the trapezoid away from the substrate is less than the length of the second bottom side adjacent to the substrate, and the angle between the waist of the trapezoid and the second bottom side is less than or equal to 70°.

[0148] Exemplarily, a chamfer is provided at a corner of the virtual lead; the radius of the chamfer is greater than or equal to 0.5 μm.

[0149] Exemplarily, the thickness of the insulating layer is less than or equal to 500 nm.

[0150] Exemplarily, an embodiment of the present application provides a light-emitting device, and FIG22 is another plan view of the light-emitting device provided by an embodiment of the present application. The virtual lead 50 includes a first sub-line 51, a second sub-line 52, a third sub-line 53, a fourth sub-line 54 and a fifth sub-line 55. The first sub-line 51 is arranged between the lap conductive block 100 and the electrode lead 40, and completely separates the lap conductive block 100 and the electrode lead 40. The second sub-line 52 is connected to the first sub-line 51 and extends along the width direction of the lap conductive block 100 (refer to the direction of the width b of the lap conductive block 100 in FIG4). The third sub-line 53 is connected to the first sub-line 51. And it extends along the length direction of the overlapping conductive block 100 (refer to the direction of the length a of the overlapping conductive block 100 in Figure 4), the fourth sub-line 54 is connected to the second sub-line 52 and extends along the length direction of the overlapping conductive block 100, the fifth sub-line 55 is connected to the third sub-line 53 and extends along the width direction of the overlapping conductive block 100, the second sub-line 52, the third sub-line 53, the fourth sub-line 54 and the fifth sub-line 55 surround the electrode lead 40, the light-emitting area 11 and part of the non-light-emitting area 12.

[0151] Exemplarily, the distance H between the first sub-wire 51 and the nearest electrode lead 40 is greater than or equal to 10 μm, for example, 20 μm, 30 μm, 50 μm, 70 μm, 80 μm, 90 μm, or 100 μm.

[0152] Exemplarily, the non-luminous area 12 includes a plurality of electrode leads 40, and the plurality of electrode leads 40 are electrically connected via a bus 300. The plurality of electrode leads 40 are electrically connected via the BUS 300, which can improve anti-static capability.

[0153] For example, FIG23 is another plan view of a light-emitting device provided in an embodiment of the present application. The light-emitting panel may include multiple light-emitting devices, wherein the structure of each light-emitting device is as described in the aforementioned embodiment, and the arrangement of the virtual lead 50 in each light-emitting device can refer to FIG22. As shown in FIG23, multiple light-emitting devices are also connected via virtual leads 50. The light-emitting panel is surrounded by virtual leads 50 on all sides, forming an electrostatic shielding ring. The multiple light-emitting devices within the electrostatic shielding ring are connected to the outermost circle of virtual leads 50 of the light-emitting panel via virtual leads 50, which can further improve the anti-static ability of the light-emitting device.

Claims

1. A light emitting device, comprising: A substrate, the substrate comprising a light-emitting area and a non-light-emitting area arranged on one side of the light-emitting area, The light-emitting region includes a first electrode and a light-emitting layer which are sequentially stacked on one side of the substrate, wherein the first electrode is disposed on a side of the light-emitting layer adjacent to the substrate. The non-light-emitting area of ​​the substrate is provided with a lapped conductive block and an electrode lead; an insulating layer is provided on a side of the lapped conductive block and the electrode lead away from the substrate, and the insulating layer covers a part of the electrode lead and the lapped conductive block; The non-luminescent area of ​​the substrate is also provided with a virtual lead or an electrical breakdown weak area; Among them, the virtual lead is arranged adjacent to the overlapping conductive block, and the virtual lead surrounds or partially surrounds the overlapping conductive block; the electrical breakdown weak area includes a conductive structure arranged on the surface of the substrate, the conductive structure and the first electrode are arranged on the same side of the substrate, and at least part of the film layer in the light-emitting layer covers the conductive structure of the electrical breakdown weak area.

2. The light emitting device according to claim 1, wherein: The ratio of the dimension of the overlapping conductive block along a preset direction to the width or length of the electrode lead is greater than or equal to 10, or the ratio of the area of ​​the overlapping conductive block to the area of ​​the electrode lead is greater than or equal to 5.

3. The light emitting device according to claim 1, wherein: The overlapping conductive block includes an overlapping sub-region and a lead sub-region, and the lead sub-region is arranged on a side of the overlapping sub-region away from the light-emitting region; The insulating layer comprises a through hole, wherein the through hole exposes at least a portion of the overlapping sub-region; A second electrode is disposed on a side of the insulating layer away from the substrate, and the second electrode extends from the light-emitting area to the non-light-emitting area and is in contact and electrically connected with the overlapping sub-area; The first electrode is electrically connected to the electrode lead.

4. The light emitting device according to claim 1, wherein: The virtual lead is arranged between the overlapping conductive block and the electrode lead, and / or the virtual lead is arranged on a side of the overlapping conductive block away from the electrode lead.

5. The light emitting device according to claim 1, wherein: The virtual lead is disposed between the overlapping conductive block and the electrode lead, and the virtual lead completely separates the overlapping conductive block from the electrode lead; or, The virtual lead includes a first sub-line and a second sub-line, the first sub-line is arranged between the overlapping conductive block and the electrode lead, the first sub-line completely separates the overlapping conductive block and the electrode lead, the second sub-line is connected to the first sub-line, and the second sub-line is arranged on a side of the overlapping conductive block away from the electrode lead; or, The virtual lead is arranged on a side of the overlapping conductive block away from the electrode lead, and the virtual lead extends from the overlapping conductive block toward the electrode lead, and a partial area of ​​the virtual lead is arranged adjacent to the electrode lead.

6. The light emitting device according to claim 5, wherein: When the virtual lead includes a first sub-line and a second sub-line, the second sub-line extends from the overlapping conductive block toward the electrode lead, and a partial area of ​​the second sub-line is adjacent to the electrode lead.

7. The light emitting device according to claim 1, wherein: The line width of the dummy lead is greater than or equal to 1 μm.

8. The light emitting device according to claim 1, wherein: The longitudinal sections of the virtual lead, the first electrode and the overlapping conductive block are respectively trapezoidal, wherein the longitudinal section is perpendicular to the extension direction of the virtual lead, the length of the first bottom side of the trapezoid away from the substrate is smaller than the length of the second bottom side adjacent to the substrate, and the angle between the waist of the trapezoid and the second bottom side is smaller than or equal to 70°.

9. The light emitting device according to claim 1, wherein: The corners of the virtual lead are provided with chamfers; The radius of the chamfer is greater than or equal to 0.5 μm.

10. The light emitting device according to claim 1, wherein: The thickness of the insulating layer is less than or equal to 500 nm.

11. The light emitting device according to claim 1, wherein: The virtual lead includes a first sub-line, a second sub-line, a third sub-line, a fourth sub-line and a fifth sub-line, the first sub-line is arranged between the overlapping conductive block and the electrode lead, and completely separates the overlapping conductive block and the electrode lead, the second sub-line is connected to the first sub-line and extends along the width direction of the overlapping conductive block, the third sub-line is connected to the first sub-line and extends along the length direction of the overlapping conductive block, the fourth sub-line is connected to the second sub-line and extends along the length direction of the overlapping conductive block, the fifth sub-line is connected to the third sub-line and extends along the width direction of the overlapping conductive block, the second sub-line, the third sub-line, the fourth sub-line and the fifth sub-line surround the electrode lead, the light-emitting area and part of the non-emitting area Light zone.

12. The light emitting device according to claim 11, wherein: The distance between the first sub-wire and the nearest electrode lead is greater than or equal to 10 μm.

13. The light emitting device according to claim 12, wherein: The non-light emitting area includes a plurality of electrode leads, and the plurality of electrode leads are electrically connected through a bus line.

14. A light emitting device, comprising: A substrate, the substrate comprising a light-emitting area and a non-light-emitting area arranged on one side of the light-emitting area, The non-light-emitting area of ​​the substrate is provided with a lapped conductive block and an electrode lead; an insulating layer is provided on a side of the lapped conductive block and the electrode lead away from the substrate, and the insulating layer covers a part of the electrode lead and the lapped conductive block; The non-luminous area of ​​the substrate is also provided with a virtual lead; The virtual lead is disposed adjacent to the overlapping conductive block, and the virtual lead surrounds or partially surrounds the overlapping conductive block.

15. The light emitting device according to claim 14, wherein: The ratio of the dimension of the overlapping conductive block along a preset direction to the width or length of the electrode lead is greater than or equal to 10, or the ratio of the area of ​​the overlapping conductive block to the area of ​​the electrode lead is greater than or equal to 5.

16. The light emitting device according to claim 14, wherein: The overlapping conductive block includes an overlapping sub-region and a lead sub-region, and the lead sub-region is arranged on a side of the overlapping sub-region away from the light-emitting region; The insulating layer comprises a through hole, wherein the through hole exposes at least a portion of the overlapping sub-region; A second electrode is disposed on a side of the insulating layer away from the substrate, and the second electrode extends from the light-emitting area to the non-light-emitting area and is in contact and electrically connected with the overlapping sub-area; The light emitting area of ​​the substrate is further provided with a first electrode, and the first electrode is electrically connected to the electrode lead.

17. The light emitting device according to claim 14, wherein: The virtual lead is arranged between the overlapping conductive block and the electrode lead, and / or the virtual lead is arranged on a side of the overlapping conductive block away from the electrode lead.

18. The light emitting device according to claim 14, wherein: The virtual lead is disposed between the overlapping conductive block and the electrode lead, and the virtual lead completely separates the overlapping conductive block from the electrode lead; or, The virtual lead includes a first sub-line and a second sub-line, the first sub-line is arranged between the overlapping conductive block and the electrode lead, the first sub-line completely separates the overlapping conductive block and the electrode lead, the second sub-line is connected to the first sub-line, and the second sub-line is arranged on a side of the overlapping conductive block away from the electrode lead; or, The virtual lead is arranged on a side of the overlapping conductive block away from the electrode lead, and the virtual lead extends from the overlapping conductive block toward the electrode lead, and a partial area of ​​the virtual lead is arranged adjacent to the electrode lead.

19. The light emitting device according to claim 18, wherein: When the virtual lead includes a first sub-line and a second sub-line, the second sub-line extends from the overlapping conductive block toward the electrode lead, and a partial area of ​​the second sub-line is adjacent to the electrode lead.

20. The light emitting device according to claim 14, wherein: The line width of the dummy lead is greater than or equal to 1 μm.

21. The light emitting device according to claim 14, wherein: The longitudinal sections of the virtual lead, the first electrode and the overlapping conductive block are respectively trapezoidal, wherein the longitudinal section is perpendicular to the extension direction of the virtual lead, the length of the first bottom side of the trapezoid away from the substrate is smaller than the length of the second bottom side adjacent to the substrate, and the angle between the waist of the trapezoid and the second bottom side is smaller than or equal to 70°.

22. The light emitting device according to claim 14, wherein: The corners of the virtual lead are provided with chamfers; The radius of the chamfer is greater than or equal to 0.5 μm.

23. The light emitting device according to claim 14, wherein: The thickness of the insulating layer is less than or equal to 500 nm.

24. A light emitting device, comprising: A substrate, the substrate comprising a light-emitting area and a non-light-emitting area disposed on at least one side of the light-emitting area; The light-emitting area includes a first electrode, a light-emitting layer, and a second electrode which are sequentially stacked on one side of the substrate, wherein the first electrode is disposed on a side of the light-emitting layer adjacent to the substrate; The non-luminescent region includes an electrical breakdown weak region, the electrical breakdown weak region includes a conductive structure disposed on the surface of the substrate, the conductive structure and the first electrode are disposed on the same side of the substrate, and at least part of the film layer in the luminescent layer covers the electrical breakdown weak region. The conductive structure of the weak zone.

25. The light emitting device according to claim 24, wherein: The total thickness of the film layers in the light-emitting layer covering the conductive structure is greater than or equal to 10 nm.

26. The light emitting device according to claim 24, wherein: The light-emitting layer comprises a first organic functional layer, an organic light-emitting layer and a second organic functional layer which are sequentially stacked, wherein the first organic functional layer is arranged on a side of the organic light-emitting layer adjacent to the first electrode; the first organic functional layer comprises at least one of a first carrier injection layer, a first carrier transport layer and a second carrier blocking layer; the second organic functional layer comprises at least one of a second carrier injection layer, a second carrier transport layer and a first carrier blocking layer; At least one of the first carrier injection layer, the first carrier transport layer, the second carrier blocking layer, the first organic functional layer, the organic light-emitting layer, the second carrier injection layer, the second carrier transport layer and the first carrier blocking layer covers the conductive structure.

27. The light emitting device according to claim 24, wherein: The first electrode includes at least two electrode blocks; each light-emitting area includes one electrode block; The non-luminous area includes at least two electrode leads, and the electrode leads are electrically connected to the electrode blocks in a one-to-one correspondence; The electrode lead includes a first lead segment, and the line width of the first lead segment is smaller than a preset value; The conductive structure includes a preset area of ​​the first lead segment, wherein the preset area is an area of ​​the first lead segment covered by a vertical projection of the second electrode on the substrate.

28. The light emitting device according to claim 27, wherein: The preset value is less than or equal to 50 μm.

29. The light emitting device according to claim 27, wherein: The electrode lead also includes a second lead segment, the line width of the second lead segment is greater than the line width of the first lead segment, and the non-luminous area also includes a second electrode bonding pin; the second electrode bonding pin and the second lead segment are arranged on a side of the first lead segment away from the luminous area; The second electrode includes a main body area and a overlapping area, the main body area is electrically connected to the overlapping area, the main body area extends from the light-emitting area to a preset area of ​​the first lead segment adjacent to one end of the second lead segment, and the overlapping area covers the second electrode overlapping pin; or, the second electrode as a whole extends from the light-emitting area to a boundary of the second electrode overlapping pin away from the light-emitting area, the second electrode covers the second electrode overlapping pin and at least part of the second lead segment, and the second lead segment covered by the second electrode includes a discharge tip.

30. The light emitting device according to claim 29, wherein: The second electrode strapping pin is arranged on one side or both sides of the area where the second lead segment is located, and the second electrode strapping pin is arranged adjacent to the first lead segment, or the second electrode strapping pin is arranged in an area where there is no electrode lead between the second electrode strapping pin and the light-emitting area, or the second electrode strapping pin is arranged in an area where the line width of the electrode lead between the second electrode strapping pin and the light-emitting area is greater than a preset value.

31. The light emitting device according to claim 30, wherein: The second lead segment covered by the second electrode includes a main body portion and a discharge portion located at at least one side of the main body portion along a width direction, and the main body portion and the discharge portion are electrically connected; The discharge portion has at least one discharge tip, and a tip of the discharge tip faces a side of the second lead segment away from the substrate.

32. The light emitting device according to claim 29, wherein: The light-emitting layer extends from the light-emitting area to the electrical breakdown weak area, and at the same boundary of the light-emitting area, the boundary of the light-emitting layer is farther away from the boundary of the light-emitting area than the preset boundary of the electrical breakdown weak area, wherein the preset boundary is the boundary of the electrical breakdown weak area away from the light-emitting area; The second electrode and the light-emitting layer cover the light-emitting area in vertical projection on the substrate, and at the same boundary of the light-emitting area, the boundary of the light-emitting layer is farther away from the boundary of the light-emitting area than the boundary of the second electrode in the non-overlapping area.

33. The light emitting device according to claim 29, wherein: The non-luminescent region further comprises an insulating layer, and the insulating layer covers the electrode lead; The non-luminous area also includes a binding pin, which is arranged on a side of the second lead segment away from the luminous area. The first end of each second lead segment is electrically connected to one of the binding pins, and the second end of each second lead segment is electrically connected to the first lead segment.

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