Storage device, storage amount calculation method, and light source device

Abstract

The present invention addresses the problem of providing a storage device which makes it possible to accurately calculate the amount of contents stored in a container.　A storage device according to one aspect of the present technology has a storage unit (40), a temperature sensor (46), a temperature adjustment mechanism (47), and a calculation unit (51). The storage unit (40) stores contents (1) and has a side section. The temperature sensor (46) is disposed on a surface on the outer side of the side section. The temperature adjustment mechanism (47) can maintain, at a predetermined temperature, the temperature of the contents (1) stored in the storage unit (40). The calculation unit (51) calculates the amount of the contents (1) stored in the storage unit (40) on the basis of the temperature detected by the temperature sensor (46).

Description

Storage device, storage capacity calculation method, and light source device

[0001] The present invention relates to a storage device, a storage capacity calculation method, and a light source device equipped with the storage device.

[0002] Traditionally, X-rays have been used for medical, industrial, and research applications. In the medical field, X-rays are used for applications such as chest radiography, dental radiography, and CT (Computer Tomography). In the industrial field, X-rays are used for applications such as non-destructive testing to observe the interior of materials such as structures and welds, and non-destructive tomographic testing. In the research field, X-rays are used for applications such as X-ray diffraction to analyze the crystalline structure of materials, and X-ray spectroscopy (X-ray fluorescence analysis) to analyze the constituent elements of materials.

[0003] Extreme ultraviolet light (hereinafter also referred to as "EUV light") with a wavelength of 13.5 nm, which is in the soft X-ray region with a relatively long wavelength among X-rays, has recently been used as exposure light. Here, the base material of a mask for EUV lithography on which a fine pattern is formed is a reflective mirror having a laminated structure in which a multilayer film (e.g., molybdenum and silicon) for reflecting EUV light is provided on a substrate made of low-thermal expansion glass. An EUV mask is then constructed by patterning a material that absorbs radiation with a wavelength of 13.5 nm on the multilayer film.

[0004] Furthermore, the size of unacceptable defects in EUV masks is significantly smaller than that of conventional ArF masks, making them difficult to detect. Therefore, EUV mask inspection is typically performed using actinic inspection, which uses radiation with a wavelength that matches the working wavelength of lithography. For example, inspection using radiation with a wavelength of 13.5 nm makes it possible to detect defects with a resolution less than the wavelength.

[0005] Generally, EUV light source devices include a DPP (Discharge Produced Plasma) light source device, an LDP (Laser Assisted Discharge Produced Plasma) light source device, and an LPP (Laser Produced Plasma) light source device.

[0006] A DPP light source device applies a high voltage between electrodes to which a gaseous plasma raw material (discharge gas) containing EUV radiation species is supplied, generating a high-density, high-temperature plasma through discharge, and utilizes the extreme ultraviolet light emitted from the plasma.

[0007] An LDP light source device is an improved version of a DPP light source device, and for example, it supplies a liquid high-temperature plasma raw material (e.g., Sn (tin) or Li (lithium)) containing EUV radiating species to the surface of an electrode (discharge electrode) that generates a discharge, irradiates the raw material with an energy beam (e.g., an electron beam or a laser beam) to vaporize the raw material, and then generates high-temperature plasma by discharge.

[0008] An LPP light source device generates high-temperature plasma by exciting an EUV radiation species with a laser beam or the like. A known light source device of this type generates plasma by concentrating laser light on droplets of EUV radiation target material, such as tin (Sn) or lithium (Li), ejected in the form of tiny droplets.

[0009] Patent Document 1 proposes a method of obtaining radiation by supplying a plasma raw material for generating radiation such as X-rays or EUV to a rotor and irradiating the region of the rotor to which the plasma raw material has been supplied with an energy beam (laser beam). A cylindrical container with one open end is used as the rotor, and liquid plasma raw material is supplied to this container, and laser light is irradiated onto the inner peripheral surface of the container.

[0010] This method corresponds to the so-called LPP method, but instead of supplying liquid plasma raw material as droplets, it uses the centrifugal force of a rotor to supply the liquid plasma raw material to the area irradiated by the energy beam. Therefore, compared to methods such as focusing a laser beam on droplets, it is possible to obtain high-intensity radiation with a relatively simple configuration.

[0011] JP 2014-216286 A

[0012] In a light source device such as that disclosed in Patent Document 1, there is a demand for a technology for accurately calculating the amount of content, such as raw materials, contained in a container.

[0013] In view of the above circumstances, an object of the present invention is to provide a storage device, a storage capacity calculation method, and a light source device that enable the amount of contents stored in a container to be calculated accurately.

[0014] To achieve the above object, a storage device according to one aspect of the present technology includes a storage unit, a first temperature sensor, a temperature adjustment mechanism, and a calculation unit. The storage unit stores contents and has a side portion. The first temperature sensor is disposed on an exterior surface of the side portion. The temperature adjustment mechanism is capable of maintaining the temperature of the contents stored in the storage unit at a predetermined temperature. The calculation unit calculates the amount of the contents stored in the storage unit based on the temperature detected by the first temperature sensor.

[0015] In this storage device, a first temperature sensor is disposed on the outer surface of the side of the storage unit, and the amount of contents stored in the storage unit is calculated based on the temperature detected by the first temperature sensor, thereby making it possible to accurately calculate the amount of contents stored in the storage unit.

[0016] The calculation unit may calculate the amount of the contents based on a difference between a predetermined initial temperature and the temperature detected by the first temperature sensor.

[0017] The calculation unit may calculate the amount of the contents using the following formula: V: amount of the content k: predetermined coefficient T ｘ: Temperature detected by the first temperature sensor T ０ : the predetermined initial temperature

[0018] Said T ０ The value of may be 100°C or more.

[0019] Said T ｘ The value of T ０ The difference in the values ​​may be 100°C or less.

[0020] The calculation unit may calculate the amount of the contents based on the temperature detected by the first temperature sensor and a predefined correspondence relationship between the temperature and the amount of the contents.

[0021] The calculation unit may calculate a height of a surface of the content contained in the container.

[0022] The first temperature sensor may be disposed above the temperature adjustment mechanism.

[0023] The first temperature sensor may be disposed above the center of the housing portion.

[0024] The first temperature sensor may be disposed at an upper end of a side portion of the housing portion.

[0025] The temperature adjustment mechanism may be disposed below the center of the storage section.

[0026] The storage unit may have a bottom, in which case the temperature adjustment mechanism may be disposed at the bottom of the storage unit.

[0027] The rotating body may be immersed in the contents contained in the container.

[0028] The container may be provided with a supply port for supplying the contents to the container, in which case the first temperature sensor may be disposed at the same height as or above the supply port.

[0029] The storage unit may be provided with a supply port for supplying the contents to the storage unit, in which case the temperature adjustment mechanism may be disposed at the same height as or below the supply port.

[0030] The first temperature sensor may be a plurality of first temperature sensors.

[0031] The temperature adjustment mechanism may include a heating mechanism that heats the contents contained in the container and a second temperature sensor. In this case, the heating mechanism may maintain the temperature of the contents at a predetermined temperature by heating the contents based on the temperature detected by the second temperature sensor.

[0032] The second temperature sensor may be disposed above the heating mechanism.

[0033] A first pipe for allowing the contents to flow in from the outside and a second pipe for allowing the contents to flow out to the outside may be connected to the storage section, and a third pipe for supplying the contents to the storage section may be inserted from above.

[0034] The third pipe may have a valve for controlling the movement of the content. In this case, another of the storage units may be connected to the third pipe.

[0035] At least one of the first pipe, the second pipe, and the third pipe may include a pump for moving the contents.

[0036] The side portion may be made of ceramic, stainless steel, or silicon.

[0037] The side portion may have a thickness of at least 1 mm and at most 20 mm.

[0038] The side portion has a thermal conductivity of 10 W / (m×k) or more and 200 W / (m×k) or less at 300K.

[0039] The side portion may be formed of a first member and a second member having a higher thermal conductivity than the first member, and in this case, the first temperature sensor may be disposed on the second member.

[0040] The side portion may have a double structure consisting of an outer member, an inner member, and an internal space defined between the outer member and the inner member.

[0041] The internal space may communicate with the interior of the storage portion at an upper side.

[0042] The contents may be a liquid ingredient.

[0043] The liquid source may be tin, lithium, gadolinium, gallium, bismuth, indium, or an alloy containing at least one of these materials.

[0044] The contents may be a powdered raw material.

[0045] A storage capacity calculation method according to one embodiment of the present technology is for a storage device including a storage section that stores contents and has a side, a first temperature sensor arranged on the outer surface of the side, and a temperature adjustment mechanism that can maintain the temperature of the contents stored in the storage section at a predetermined temperature, and calculates the amount of the contents stored in the storage section based on the temperature detected by the first temperature sensor.

[0046] The first temperature sensor may detect the temperature in a state where the flow of the contents inside the storage section is stopped.

[0047] A light source device according to one aspect of the present technology is a light source device that generates radiation by converting a raw material into plasma using irradiation of an energy beam, and includes: a storage unit that stores the raw material and has a side; a first temperature sensor that is arranged on an outer surface of the side; a temperature adjustment mechanism that can maintain the temperature of the raw material stored in the storage unit at a predetermined temperature; and a calculation unit that calculates the amount of the raw material stored in the storage unit based on the temperature detected by the first temperature sensor.

[0048] According to the present invention, it is possible to accurately calculate the amount of a content such as an ingredient contained in a container. Note that the effects described herein are not necessarily limited to those described herein, and may be any of the effects described in this disclosure.

[0049] FIG. 1 is a schematic diagram showing a configuration example of a light source device according to a first embodiment of the present invention. FIG. 1 is a schematic diagram showing a configuration example of a plasma generation mechanism, a raw material supply device, and a storage unit. FIG. 2 is a cross-sectional view showing a configuration example of a storage unit. FIG. 2 is a schematic diagram showing a storage unit for experimentation. FIG. 3 is a graph showing the relationship between the amount of plasma raw material and the temperature detected by a temperature sensor. FIG. 3 is a schematic diagram showing a configuration example of a storage unit with a double structure. FIG. 4 is a schematic diagram showing a configuration example of a storage unit with a double structure. FIG. 4 is a schematic diagram showing a configuration example of a plasma generation mechanism. FIG. 5 is a schematic diagram showing variations in the arrangement of a temperature sensor and a heater. FIG. 6 is a schematic diagram showing variations in the arrangement of a temperature sensor and a heater. FIG. 7 is a schematic diagram showing a configuration example of a raw material supply device. FIG. 8 is a schematic diagram showing a configuration example of a plasma generation mechanism that allows for recycling of plasma raw material.

[0050] Hereinafter, embodiments of the present technology will be described with reference to the drawings.

[0051] <First Embodiment> [Basic Configuration of Light Source Device] Fig. 1 is a schematic diagram showing an example of the configuration of a light source device according to a first embodiment of the present invention. The light source device 100 is an LPP-type light source device. In other words, the light source device 100 converts a plasma raw material 1 into plasma by irradiating it with an energy beam EB, and extracts radiation R. In this disclosure, radiation R includes light (electromagnetic waves) emitted from a plasma P, such as light in the soft X-ray region, such as EUV light, and higher-energy hard X-rays.

[0052] When EUV light is emitted as the radiation R, an EUV raw material is used as the plasma raw material 1. As raw materials for emitting EUV light, for example, liquid tin (Sn) or lithium (Li) is used. Sn and Li are solid at room temperature, but are used in a liquid state when irradiated with the energy beam EB. When X-rays are emitted as the radiation R, an X-ray raw material is used as the plasma raw material 1. The X-ray raw material is, for example, a metal that is liquid at room temperature, and examples of the X-ray raw material that can be used include gallium (Ga), a gallium alloy, and an Sn compound. The plasma raw material 1 corresponds to an embodiment of the contents and liquid raw material according to the present technology.

[0053] FIG. 1 is a diagram showing a schematic cross section of the light source device 100 taken horizontally at a predetermined height from the installation surface, as viewed from above. In FIG. 1 , cross sections of portions that are not necessary for explaining the cross-sectional configuration, etc., are omitted to facilitate understanding of the configuration and operation of the light source device 100. Hereinafter, the X direction may be referred to as the left-right direction (the positive side of the X axis is the right side, and the negative side is the left side), the Y direction as the front-rear direction (the positive side of the Y axis is the front side, and the negative side is the rear side), and the Z direction as the height direction (the positive side of the Z axis is the upper side, and the negative side is the lower side). Of course, the application of the present technology is not limited to the orientation in which the light source device 100 is used.

[0054] The light source device 100 includes a housing 2, a vacuum chamber 3, an energy beam entrance chamber 4, a radiation exit chamber 5, a plasma generation mechanism 6, a control unit 7, and a raw material supply device 30. In Fig. 1, the raw material supply device 30 is schematically illustrated by a dashed frame.

[0055] 1, the housing 2 is configured so that its outer shape is roughly cubic. The shape of the housing 2 is not limited to a cube, and any three-dimensional shape may be used. The housing 2 has an exit hole 2a formed on the front surface, an entrance hole 2b formed on the right side surface, a through-hole 2c formed on the rear surface, and a through-hole 2d formed on the left side surface. The material of the housing 2 is not limited, and a metal housing may be used, for example.

[0056] In this embodiment, the emission axis EA of the radiation R is set to pass through the emission hole 2a on the front surface and extend in the Y direction (front-rear direction). The radiation R, such as X-rays or EUV light, is extracted along the emission axis EA and emitted forward from the emission hole 2a. In this embodiment, the incident axis IA of the energy beam EB is set to extend obliquely left toward the rear from the entrance hole 2b on the right surface. As shown in FIG. 1 , a beam source 8 that emits the energy beam EB is installed outside the housing 2. The beam source 8 is installed so that the energy beam EB enters the housing 2 along the incident axis IA. An electron beam or a laser beam can be used as the energy beam EB. The beam source 8 may be configured in any manner that can emit such an energy beam EB.

[0057] The light source device 100 is provided with a chamber section C including a plurality of chambers. Specifically, the chamber section C has a vacuum chamber 3, an energy beam incident chamber (hereinafter simply referred to as an incident chamber) 4, and a radiation exit chamber (hereinafter simply referred to as an exit chamber) 5. The vacuum chamber 3, the incident chamber 4, and the exit chamber 5 are spatially connected to one another. That is, the vacuum chamber 3 and the incident chamber 4 are connected to one another. Similarly, the vacuum chamber 3 and the exit chamber 5 are connected to one another.

[0058] The entrance chamber 4 is formed to be located on an entrance axis IA of the energy beam EB, and the exit chamber 5 is formed to be located on an exit axis EA of the radiation R. In addition, the vacuum chamber 3 is provided with a mechanism for generating plasma P.

[0059] In this embodiment, the chamber section C (vacuum chamber 3, entrance chamber 4, and exit chamber 5) is made up of the chamber main body 9, an outer protrusion 9a that protrudes forward from the front surface of the chamber main body 9, and two inner protrusions 9b and 9c that protrude inward from the inner peripheral surface of the chamber main body 9. Metal materials are used as the materials for the chamber main body 9, the outer protrusion 9a, and the two inner protrusions 9b and 9c that make up the chamber section C.

[0060] The chamber main body 9 is configured so that its outer shape is roughly a rectangular parallelepiped, and is disposed so that its front, rear, left, and right faces face the front, rear, left, and right faces of the housing 2. The chamber main body 9 is also disposed so that its right front corner between the front face and right face is located on the incident axis IA of the energy beam EB.

[0061] As shown in FIG. 1 , an emission hole 9d is formed in the front surface of the chamber main body 9. The emission hole 9d is formed at a position aligned with the emission hole 2a in the front surface of the housing 2 on the emission axis EA of the radiation R. An outer protrusion 9a is configured to protrude forward from the periphery of the emission hole 9d in the chamber main body 9. The outer protrusion 9a is configured to protrude further forward than the emission hole 2a in the housing 2 so as to be inscribed within the emission hole 2a. Furthermore, an inner protrusion 9b is configured to protrude inward from the periphery of the emission hole 9d on the interior side of the chamber main body 9. Note that the configuration of the inner protrusion 9b is not essential, and only the outer protrusion 9a may be provided in the chamber section C. The space surrounded by the outer protrusion 9a and the inner protrusion 9b functions as the emission chamber 5. The outer protrusion 9a and the inner protrusion 9b, which are members that constitute the emission chamber 5, may themselves be referred to as the emission chamber. The outer protrusion 9 a and the inner protrusion 9 b may be formed integrally with the chamber body 9 or may be formed separately and then connected to the chamber body 9 .

[0062] The exit chamber 5 is configured to have a cone shape with the exit axis EA of the radiation R as its central axis. The exit chamber 5 is configured so that, in the direction of the exit axis EA of the radiation R, the cross-sectional area is large in the center and becomes smaller toward the front and rear ends. In other words, the exit chamber 5 has a shape that narrows toward the front and rear ends. Furthermore, the exit chamber 5 is provided with openings (apertures) at the front and rear ends to allow the radiation R to pass through.

[0063] A utilization device such as a mask inspection device is connected to the front end of the extraction chamber 5 (the front end of the outer protrusion 9a). In the example shown in FIG. 1, an application chamber 10 is connected as a chamber forming part of the utilization device. The pressure inside the application chamber 10 may be atmospheric pressure. Furthermore, the inside of the application chamber 10 may be purged by introducing gas (e.g., inert gas) through a gas injection path as needed. Furthermore, the gas inside the application chamber 10 may be exhausted by exhaust means (not shown).

[0064] A filter film 11 is provided between the extraction chamber 5 and the application chamber 10 to physically separate the region where plasma P is generated from the application chamber 10. The filter film 11 is constructed with a structure that allows radiation to pass through, and prevents the plasma raw material 1 and debris that are scattered as plasma P is generated from entering the application chamber 10.

[0065] A collector (condensing mirror) 12 is disposed inside the exit chamber 5 to guide and condense the radiation R that has entered the exit chamber 5 into a utilization device (inside the application chamber 10). In Figure 1, the components of the radiation R that enter the exit chamber 5 and are condensed are indicated by hatching.

[0066] A shielding member (central obscuration) 13 is also disposed inside the exit chamber 5. The shielding member 13 is disposed on the exit axis EA of the radiation R so as to be aligned with the exit hole 9d of the chamber body 9, the exit hole 2a of the housing 2, and the filter film 11. In this embodiment, the shielding member 13 can block radiation components that are not collected by the collector 12. Note that the shielding member 13 does not necessarily have to be provided.

[0067] An entrance window 14 is formed in the front right corner of the chamber body 9. The entrance window 14 is formed at a position aligned with the entrance hole 2b on the right side of the housing 2 on the entrance axis IA of the energy beam EB. An inner protrusion 9c is formed inside the front right corner of the chamber body 9 so as to protrude from a position surrounding the entrance window 14 along the direction of the entrance axis IA of the energy beam EB. Of the internal space of the chamber body 9, the space surrounded by the inner protrusion 9c functions as the entrance chamber 4. The inner protrusion 9c and the front right corner of the chamber body 9 that constitute the entrance chamber 4 can also be referred to as the entrance chamber. The inner protrusion 9c may be formed integrally with the chamber body 9, or may be formed separately and then connected to the chamber body 9.

[0068] The incident chamber 4 is configured to have a cone shape with the incident axis IA of the energy beam EB as its central axis. The incident chamber 4 is configured so that its cross-sectional area decreases toward the inner end of the chamber body 9 in the direction of the incident axis IA of the energy beam EB. In other words, the incident chamber 4 has a shape that narrows toward the inner end. Furthermore, the incident chamber 4 has an opening (aperture) at its inner end that allows the energy beam EB to pass through.

[0069] A capture mechanism for capturing scattered plasma raw material 1 and debris is placed inside the injection chamber 4. In the example shown in Figure 1, the capture mechanism is a rotary window 15, which is a plate-shaped rotating member that transmits the energy beam EB and captures the plasma raw material 1 and debris. By rotating the rotary window 15, the effective area of ​​the beam transmission region of the rotary window 15 increases, making it possible to reduce the frequency with which the rotary window 15 is replaced.

[0070] 1, the extraction chamber 5 and the incidence chamber 4 are provided with gas injection paths 16a and 16b, respectively, and gas is supplied from a gas supply device (not shown) into the extraction chamber 5 and the incidence chamber 4. A gas having a high transmittance to the radiation R is supplied to the extraction chamber 5. A gas having a high transmittance to the energy beam EB is supplied to the incidence chamber 4.

[0071] The gases supplied to the extraction chamber 5 and the incidence chamber 4 may be the same or different. For example, argon or helium can be used as gases that have high transmittance for both the energy beam EB and the radiation R. There are no other limitations on the type of gas supplied to the extraction chamber 5 and the incidence chamber 4. By supplying gas, the internal pressure of the extraction chamber 5 and the incidence chamber 4 can be set higher than the internal pressure of the vacuum chamber 3, thereby making it possible to suppress the intrusion of debris and the like.

[0072] Of the internal space of the chamber main body 9, the space excluding the internal space of the inner protrusion 9b that functions as the emission chamber 5 and the internal space of the inner protrusion 9c that functions as the incidence chamber 4 functions as the vacuum chamber 3. The part that constitutes the vacuum chamber 3 itself can also be called the vacuum chamber.

[0073] 1 , the chamber main body 9 has a portion that protrudes from the housing 2 to the outside through a through-hole 2d on the left side surface of the housing 2, and its tip is connected to an exhaust pump 17. The specific configuration of the exhaust pump 17 is not limited, and any pump such as a vacuum pump may be used. The exhaust pump 17 evacuates the vacuum chamber 3, reducing the pressure in the vacuum chamber 3. This suppresses attenuation of the radiation R generated in the vacuum chamber 3. The inside of the vacuum chamber 3 need only be a reduced pressure atmosphere relative to the entrance chamber 4 and the exit chamber 5, and does not necessarily have to be a vacuum atmosphere. An inert gas may also be supplied into the vacuum chamber 3.

[0074] In this embodiment, a gas nozzle 18 is installed so as to extend in the left-right direction toward the region between the incident axis IA and the exit axis EA. The gas nozzle 18 is installed on the right side surface of the chamber body 9 via a seal member or the like. The gas nozzle 18 is connected to a gas supply device (not shown) and supplies gas into the chamber body 9. The configuration of the gas nozzle 18 is not essential, and gas may be supplied without passing through the gas nozzle. In the example shown in FIG. 1 , gas is sprayed from the gas nozzle 18 from the right side of the region between the incident axis IA and the exit axis EA toward the left side along the left-right direction. This makes it possible to move debris emitted from the plasma P in a direction away from the incident axis IA and the exit axis EA.

[0075] The plasma generation mechanism 6 is a mechanism for generating plasma P within the vacuum chamber 3 and emitting radiation R (X-rays, EUV light). The plasma generation mechanism 6 includes a disk-shaped rotor 20 for supplying raw material, and a raw material container 21 for containing liquid plasma raw material 1. The rotor 20 and raw material container 21 are disposed inside the vacuum chamber 3.

[0076] 1, an energy beam EB is incident on a disk-shaped rotating body 20. The rotating body 20 is disposed in the vacuum chamber 3 so that the irradiation position I of the energy beam EB is located at the intersection of an incident axis IA and an exit axis EA. The shape of the rotating body is not limited to a disk shape, and a polygonal rotating body, for example, may be used.

[0077] The raw material container 21 is provided so that the rotor 20 is immersed therein, and liquid plasma raw material 1 is supplied to the rotor 20. For example, the rotor 20 is rotatably held while immersed in the liquid plasma raw material 1 in the raw material container 21, and the plasma raw material 1 adheres to the surface of the rotor 20. As the rotor 20 rotates in this state, the plasma raw material 1 is supplied to the irradiation position I of the rotor 20. Then, an energy beam EB is incident on the irradiation position I of the rotor 20, and plasma P is generated.

[0078] In this way, the raw material container 21 is provided inside the vacuum chamber 3, stores the liquid plasma raw material 1, and supplies the liquid plasma raw material 1 to the irradiation position I of the energy beam EB. The rest of the configuration of the plasma generation mechanism 6 will be explained in detail later.

[0079] The control unit 7 controls the operation of each component of the light source device 100. For example, the control unit 7 controls the operation of the beam source 8 and the exhaust pump 17. The control unit 7 also controls the operation of various motors, the raw material supply device 30, and the like, which will be described later. The control unit 7 has hardware circuits necessary for a computer, such as a CPU and memory (RAM, ROM). The CPU loads a control program stored in the memory into the RAM and executes it, thereby performing various processes. The control unit 7 may be, for example, a programmable logic device (PLD) such as a field programmable gate array (FPGA), or another device such as an application specific integrated circuit (ASIC). While the control unit 7 is schematically illustrated as a functional block in FIG. 1 , the location of the control unit 7 may be designed as desired.

[0080] 1 , in this embodiment, a radiological diagnostic unit 19 is configured in a region spatially connected to the vacuum chamber 3 on the front side of the chamber main body 9. The radiological diagnostic unit 19 is configured at a position where radiation R emitted in a direction different from the emission axis EA of the radiation R is incident. The radiological diagnostic unit 19 measures the state of the radiation R from the plasma P. Here, the state of the radiation R refers to the physical state of the radiation R, such as the intensity, wavelength, and spectrum of the radiation R. For example, the radiological diagnostic unit 19 is configured by a detector that detects the presence or absence of radiation R and a measuring device that measures the radiation output. The measurement results by the radiological diagnostic unit 19 are used for diagnosing the radiation R and for controlling the operation of the raw material supply device 30, which will be described below.

[0081] The raw material supply device 30 supplies the plasma raw material 1 into the raw material container 21. There are no restrictions on the timing at which the raw material supply device 30 supplies the plasma raw material 1. The specific configuration of the raw material supply device 30 will be described in detail later.

[0082] [Plasma generation mechanism, etc.] Figure 2 is a schematic diagram showing an example configuration of the plasma generation mechanism 6, raw material supply device 30, and storage unit 40. Figure 2 shows the plasma generation mechanism 6 of Figure 1 as viewed from the direction of arrow A (positive side of the Y direction). The raw material supply device 30 and storage unit 40 are connected to the plasma generation mechanism 6. Note that in Figure 1, the raw material supply device 30 is shown in a dashed frame, and the storage unit 40 is not shown.

[0083] 2, raw material supply device 30 comprises a container that stores plasma raw material 1, a pipe connected to the container, a pump attached to the pipe, and a pipe inserted into the container from above. The pipe connected to the container is further connected to raw material container 21 of plasma generation mechanism 6. In this way, plasma raw material 1 is supplied to raw material container 21.

[0084] Because the rotor 20 is immersed in the plasma raw material 1 in the raw material container 21, the rotation of the rotor 20 lifts up the plasma raw material 1 while it is attached to the rotor 20. The attached plasma raw material 1 is then irradiated with an energy beam EB from the beam source 8. The energy beam EB is shown schematically by an arrow in Figure 2.

[0085] At irradiation position I, some of the plasma raw material 1 may scatter without becoming plasma. The scattered plasma raw material 1 falls to the bottom of raw material container 21, as shown in Figure 2. A reservoir 40 is connected to the bottom of plasma generation mechanism 6, and the fallen plasma raw material 1 accumulates in reservoir 40. Plasma raw material 1 may also leak from raw material container 21, and this plasma raw material 1 also accumulates in reservoir 40.

[0086] [Storage section] Figure 3 is a cross-sectional view showing an example of the configuration of the storage section 40. The storage section 40 is a roughly cylindrical container. Figure 3 shows a cross section taken along the XZ plane at the center of the storage section 40. The state in which the plasma raw material 1 is stored in the storage section 40 is also shown. The storage section 40 has an upper section 43, a side section 44, and a bottom section 45.

[0087] The upper part 43 has a disk shape and has an opening in its center that protrudes toward the positive side in the Z direction. An opening of the same shape is also formed in the chamber body 9, and the upper part 43 is connected to the chamber body 9 so that the opening of the chamber body 9 coincides with the opening of the upper part 43. The diameter of each opening and the specific connection form between the upper part 43 and the chamber body 9 are not limited.

[0088] The side portion 44 has a cylindrical shape. The diameter of the side portion 44 is the same as the diameter of the upper portion 43, and the upper end of the side portion 44 is connected to the lower surface of the upper portion 43. The bottom portion 45 has a disk shape. The diameter of the bottom portion 45 is the same as the diameter of the side portion 44, and the upper surface of the bottom portion 45 is connected to the lower end of the side portion 44. The specific shape of the storage portion 40 is not limited thereto. For example, any shape within the range that can be realized by the present technology, such as a spherical shape or a prismatic shape, can be adopted. The storage portion 40 corresponds to one embodiment of a storage portion related to the present technology.

[0089] In this embodiment, a temperature sensor 46, a heater 47, and an information processing device 48 are connected to the storage unit 40. The temperature sensor 46 is, for example, a thermocouple, a platinum resistance temperature detector (PT100), or the like. Of course, the specific type of the temperature sensor 46 is not limited. Although the temperature sensor 46 is schematically illustrated in FIG. 3 as being rod-shaped, the specific shape of the temperature sensor 46 is not limited either.

[0090] The temperature sensor 46 is placed on the outer surface of the side portion 44. The inside of the reservoir 40 is the space where the plasma raw material 1 is stored, and the outside is the space on the opposite side. As shown in Figure 3, the temperature sensor 46 is placed on the left side of the side portion 44 so as to abut against the outer (left) surface.

[0091] Furthermore, in this example, the temperature sensor 46 is disposed above the center of the storage section 40. The "center" refers to the center in the Z direction (vertical direction) of the side section 44, and the temperature sensor 46 is disposed above that. Alternatively, the "center" may refer to the center in the vertical direction when the side section 44 and the upper section 43 are viewed together. In this case, the temperature sensor 46 is also disposed above the center. Of course, this is not limited to this, and the temperature sensor 46 may also be disposed below the center, and the specific location of the temperature sensor 46 is not limited. The temperature sensor 46 corresponds to an embodiment of a first temperature sensor according to the present technology.

[0092] The heater 47 is, for example, a resistance heating type electric heater. Alternatively, any other heating mechanism may be used, such as a heating device using induction heating (IH), an infrared lamp such as a halogen lamp, or a heat transfer oil circulator.

[0093] In this example, the heater 47 has a rod shape and is disposed on the bottom 45 of the storage section 40. Specifically, a plurality of heaters 47 are arranged side by side along the Y direction (depth direction) so as to extend in the X direction (left-right direction), and are disposed in contact with the lower surface of the bottom 45. Of course, the specific shape and arrangement of the heater 47 are not limited to this. For example, the heater 47 may be disk-shaped and be in contact with one side of the lower surface of the bottom 45.

[0094] If the temperature of the plasma raw material 1 in the reservoir 40 is low, the plasma raw material 1 may solidify and grow like a limestone cavern, which may interfere with the operation of the light source device 100. For this reason, the plasma raw material 1 must always be in a liquid phase.

[0095] The liquid surface of the plasma raw material 1 contacts the space within reservoir 40, and during operation the pressure in this space is low at a few Pa, so there is little conducted heat flow, but thermal energy is released by radiation, which reduces the temperature of the plasma raw material 1. Furthermore, while side portion 44 does not release much thermal energy by radiation, because the plasma raw material 1 is in contact with side portion 44, heat flow and thermal conduction occur at side portion 44, causing the temperature of the plasma raw material 1 to drop.

[0096] For this reason, as in this embodiment, it is necessary to heat the plasma raw material 1 by the heater 47. The heater 47 corresponds to one embodiment of the temperature adjustment mechanism according to this embodiment.

[0097] The information processing device 48 is a computer such as a personal computer (PC), or any other computer may be used. The information processing device 48 includes a central processing unit (CPU), read-only memory (ROM), random access memory (RAM), a storage unit, etc.

[0098] The information processing device 48 has a controller 49. The controller 49 has hardware circuits necessary for a computer, such as a CPU and memory (RAM, ROM). The CPU executes programs related to the present technology stored in a storage unit or memory, thereby performing various processes related to the present technology. As the controller 49, for example, a programmable logic device (PLD) such as a field programmable gate array (FPGA), or other devices such as an application specific integrated circuit (ASIC), may be used.

[0099] In this embodiment, the CPU of the controller 49 executes a program (e.g., an application program) according to the present technology, thereby realizing a control unit 7 and a calculation unit 51 as functional blocks. These functional blocks then execute the capacity calculation method according to the present embodiment. Note that dedicated hardware such as an IC (integrated circuit) may be used as appropriate to realize each functional block.

[0100] The control unit 7 controls the operation of the temperature sensor 46 and heater 47. For example, it controls whether or not the heater 47 heats, and the heating output. In this embodiment, the control unit 7 controls the heater 47 to heat at a constant output. This maintains the temperature of the plasma raw material 1 stored in the storage unit 40 at a predetermined temperature. The control unit 7 may also be capable of controlling the operation of any other mechanism. The calculation unit 51 calculates the amount of plasma raw material 1 stored in the storage unit 40. The specific control content by the control unit 7 and the specific calculation method by the calculation unit 51 will be described later.

[0101] The information processing device 48 also has a communication unit (not shown). The communication unit is a communication module for communicating with other devices via a network such as a local area network (LAN) or a wide area network (WAN). A communication module for short-range wireless communication such as Bluetooth (registered trademark) may be provided. Alternatively, a communication device such as a modem or a router may be used. This enables communication between the information processing device 48 and the temperature sensor 46 or heater 47, enabling control of various mechanisms and acquisition of information. Note that wired communication may also be used. The specific configuration of the information processing device 48 is not limited. The storage unit 40, the temperature sensor 46, the heater 47, and the calculation unit 51 correspond to an embodiment of a storage device according to the present technology.

[0102] [Calculation Unit] The specific calculations performed by calculation unit 51 will now be described. In this example, the temperature is first detected by temperature sensor 46. Specifically, because temperature sensor 46 is located on side section 44, the temperature of that section of side section 44 where it is located is detected. Because heat from heater 47 and plasma raw material 1 is conducted to side section 44, the detected temperature will vary depending on the state of heater 47 and plasma raw material 1.

[0103] Here, the side portion 44 is structured to conduct heat in one direction (upward), and a heat flow energy of Q is generated per unit area from the plasma raw material 1 in the reservoir 40 or from the bottom 45, and heat conduction occurs in this one direction. At this time, a temperature gradient T ｘ -T ０For example, when the liquid level of plasma raw material 1 is low, the temperature sensor 46 is far from the liquid level, and the temperature detected by temperature sensor 46 is significantly lower than the temperature of plasma raw material 1. On the other hand, when the liquid level is high, the temperature sensor 46 is close to the liquid level, and the detected temperature does not drop as much compared to the temperature of plasma raw material 1.

[0104] In this way, the detected temperature changes depending on the height of the liquid surface. However, since thermal conductivity differs depending on the temperature, it is known that the temperature gradient is generally not linear.

[0105] Here, the inventors ０ is relatively high, and T ０ and T ｘ It was found that if the temperature gradient is small, the change in thermal conductivity is small, and the heat changes almost linearly in the direction of conduction. This makes it possible to calculate the amount of plasma raw material 1 based on the gradient of this system and the measurement value of temperature sensor 46.

[0106] To verify the above idea, the inventors fabricated an experimental reservoir 54. FIG. 4 is a schematic diagram showing the experimental reservoir 54. The reservoir 54 is a cylindrical container, and most of the side is a thin, double-walled stainless steel side portion 55. The top of the double-walled structure of the side portion 55 is open, allowing the interior of the double-walled structure to communicate with the interior of the chamber body 9. This allows the interior of the double-walled structure to be evacuated during operation. A portion of the side extends vertically to form a normal stainless steel side portion 56 (a non-double-walled structure). A temperature sensor 46 is located above the center of the side portion 56. Although not shown, a heater 47 is located at the bottom of the reservoir 54.

[0107] The liquid level is shown schematically by a dashed line in Figure 4. In the experiment, the temperature detected by temperature sensor 46 was measured as the initial temperature at a predetermined initial liquid level (lower dashed line). Furthermore, the amount (volume) of plasma raw material 1 was calculated as the initial amount based on the liquid level and the shape of reservoir 54, and the initial amount and initial temperature were recorded.

[0108] The height of the liquid surface was further changed, and the detected temperature was measured when the liquid surface height was Δx (upper broken line). The relationship between the amount calculated from the liquid surface height and the temperature was recorded for each temperature.

[0109] Specifically, plasma raw material 1 was heated in a container in a separate chamber connected to reservoir 54, and then the container was tilted to titrate plasma raw material 1 into reservoir 54. The vacuum was then broken, the container was removed into the atmosphere, and the amount of plasma raw material 1 in reservoir 54 was calculated by measuring the distance between the surface position of the top surface of the container and the liquid level of plasma raw material 1.

[0110] Fig. 5 is a graph showing the relationship between the amount of plasma raw material 1 and the temperature detected by temperature sensor 46. Fig. 5 shows the results of an experiment using reservoir 54. The horizontal axis shows the amount of plasma raw material 1 (A is a certain unit volume), and the vertical axis shows the temperature detected by temperature sensor 46.

[0111] As shown in Figure 5, the detected temperature at a predetermined initial amount (0) is approximately 150°C. The detected temperature at amount A is approximately 156°C. The detected temperature at amount 5A is approximately 190°C. Note that amount 5A is the amount of plasma raw material 1 when the liquid level reaches the height of temperature sensor 46. Although not shown in the figure, when the liquid level is 5A or higher, the detected temperature will never rise above 190°C. This is because plasma raw material 1 is always present at the position of temperature sensor 46, and no temperature gradient occurs.

[0112] In this way, the relationship between the amount and the detected temperature is generally linear (shown by the dashed straight line), although there is some variation. That is, the following relationship holds: V: Amount of plasma raw material 1 k: Predetermined coefficient T ｘ : Temperature detected by the temperature sensor 46 T ０ : predetermined initial temperature

[0113] In this example, the initial temperature T ０ The detected temperature at V=5A is T ｘ = 190°C, it is possible to find the coefficient k by substituting these values. Thus, k is calculated. Here, since the unit volume A is a known value, k is calculated as a specific value. It is also possible to calculate k by substituting other quantities and detected temperatures, such as the detected temperature Tx = approximately 166°C when the quantity V = 2A. In either case, roughly the same value of k is calculated. In this way, the value of k changes depending on various conditions such as the joining conditions when manufacturing the container and the materials used, but by conducting such verification, it is possible to specifically determine the value of k.

[0114] As can be seen from these results, if the relationship between the quantity and the detected temperature is linear, then as long as two pieces of information are obtained, namely the initial temperature at the initial quantity and the detected temperature at a certain quantity, it is possible to calculate the corresponding quantity for any subsequent detected temperature.

[0115] In this example, for example, T ０ The value of the initial temperature T detected by the temperature sensor 46 is set to 100° C. or more. ０ By heating the plasma raw material 1 so that the temperature is 100°C or higher, it is possible to reliably bring the plasma raw material 1 into a molten state. ｘ The value of T ０ The difference between the values ​​of T and T is set to 100°C or less. In this case as well, it is possible to reliably bring the plasma raw material 1 into a molten state. ｘ and T ０ The specific values ​​of are not limited to these.

[0116] Calculation unit 51 calculates the amount of plasma raw material 1 using equation 1. Specifically, the temperature detected by temperature sensor 46 is acquired by the communication unit of information processing device 48. Calculation unit 51 calculates the amount of plasma raw material 1 by substituting the acquired temperature into equation 1.

[0117] In this example, the volume is calculated as the amount of plasma raw material 1, but the type of amount calculated is not limited to this. For example, the calculation unit 51 may calculate the surface height (liquid level height) of the plasma raw material 1 stored in the storage unit 54. For example, the liquid level height can be calculated by multiplying the calculated volume by a predetermined coefficient that depends on the shape of the storage unit 54. Alternatively, the mass may be calculated. In this case, the mass can be calculated by multiplying the calculated volume by the density of the plasma raw material 1. Any other amount may be calculated.

[0118] In this way, calculation unit 51 calculates the amount of plasma raw material 1 based on the difference between a predetermined initial temperature and the temperature detected by temperature sensor 46. Calculations based on this difference include calculations using (Equation 1). This is not limiting, and the amount of plasma raw material 1 may be calculated using any calculation method based on a difference. For example, an equation other than (Equation 1) that includes a difference may be used.

[0119] Furthermore, calculation unit 51 calculates the amount of plasma raw material 1 based on the temperature detected by temperature sensor 46. Calculations based on the detected temperature include calculations based on the difference and calculations using equation 1. However, calculations are not limited to these, and the amount of plasma raw material 1 may be calculated using any calculation method based on the detected temperature.

[0120] For example, the calculation unit 51 may calculate the amount of plasma raw material 1 based on the temperature detected by the temperature sensor 46 and a predetermined correspondence relationship between the temperature and the amount of plasma raw material 1. Specifically, before the light source device 100 is used (e.g., during manufacture), the correspondence relationships between each detected temperature and amount are recorded in advance. For example, each correspondence relationship is determined by conducting an experiment using the storage unit 40, and a group of correspondence relationships is generated as a chart such as that shown in FIG. 5. The generated chart is stored in the memory of the information processing device 48, for example, and is read out during calculations by the calculation unit 51. Note that the correspondence relationships may also be determined by simulation rather than by actual experimentation.

[0121] Alternatively, the group of correspondence relationships may be generated in other formats such as a table. There is no limit to the number of correspondence relationships used, and correspondence relationships may be generated in any grid, for example, in increments of 1°C or 5°C. Correspondence relationships may also be defined by interpolation.

[0122] As described above, in light source device 100 according to this embodiment, a temperature sensor is placed on the exterior surface of side section 44 of storage section 40, and the amount of plasma raw material 1 stored in storage section 40 is calculated based on the temperature detected by temperature sensor 46. This makes it possible to accurately calculate the amount of plasma raw material 1 stored in storage section 40.

[0123] In an EUV light source device such as the light source device 100, a shortage of raw material prevents stable EUV emission, so it is necessary to measure the amount of raw material in a container that supplies the raw material. In view of this, a technology (hereinafter referred to as a comparative example) is used in which a sensor is hung inside the container to detect the position of the liquid surface of the raw material.

[0124] However, with the technology of the comparative example, the height of the liquid level cannot be detected unless the liquid level reaches the sensor. In other words, if the liquid level is at a position lower than the position of the sensor, specific information about the liquid level cannot be obtained, and only the fact that the liquid level is "lower than the position of the sensor" can be determined.

[0125] As will be described later, this technology can also be applied to the containers in the raw material supply device 30 in Fig. 2 and the raw material container 21. That is, this technology can be applied not only to containers that store used raw materials, such as the storage unit 40 described above, but also to containers for supplying raw materials. That is, in a container for supplying raw materials, even if the liquid level is below the temperature sensor, it is possible to know the specific height of the liquid level.

[0126] If the specific height of the liquid level is unknown, it is not known when to replenish the raw material, and it may suddenly be discovered that the container is empty, which may cause problems with the operation of the light source device 100. In other words, this can happen with the technology of the comparative example. In contrast, with this technology, the liquid level is always known, making it possible to replenish the raw material at the appropriate time. Note that when the liquid level is above the temperature sensor 46, although the specific height of the liquid level is unknown, it is possible to obtain information that "the liquid level is above the temperature sensor 46."

[0127] Furthermore, in the case of a container for storing used raw materials, in the comparative example, it is not known when to discard the raw material, so it may suddenly be discovered that the container is full, and the raw material may overflow from the container. With this technology, the liquid level is always known, so disposal can be carried out at the appropriate time, preventing this from happening. In this way, this technology makes it possible to appropriately schedule the supply and disposal of raw materials.

[0128] Furthermore, in the comparative example technology, sensing is performed by the sensor coming into direct contact with the raw material. Therefore, the sensor comes into contact with the high-temperature molten raw material, causing deterioration. This causes problems such as a shortened sensor lifespan. Furthermore, because contaminants generated from impurities float on the liquid surface, the contaminants adhere to the tip of the sensor, causing problems such as the amount not being detected or being detected incorrectly. In contrast, in this technology, the temperature sensor does not come into contact with the raw material. Therefore, there is no need for special treatments to impart heat resistance or corrosion resistance (such as coatings or the use of special materials), which reduces the manufacturing costs of the device.

[0129] Furthermore, in the technology of the comparative example, a sensor and a transmission line for transmitting the sensor signal to the outside are placed inside the container. Therefore, it is necessary to secure space inside the container for the sensor itself and the transmission line, which causes the problem of the container becoming large. On the other hand, in the technology of the present invention, the temperature sensor and transmission line are placed outside the container, so there is no need to secure space inside the container, and the container can be made smaller.

[0130] Furthermore, in the technology of the comparative example, an electrical access port communicating with the outside is required to extract the signal from the sensor to the outside. However, heat inside the container escapes from this part, deteriorating the heat retention of the container. Furthermore, because this part is in contact with the outside air, there is a large temperature difference and it is prone to deterioration. This can lead to problems such as outside air leaking due to deformation or cracking. On the other hand, in this technology, the temperature sensor is placed outside the container, so an access port is not required and high heat retention can be maintained. Furthermore, deterioration, deformation, etc. are prevented.

[0131] Furthermore, in this embodiment, the amount of plasma raw material 1 is calculated based on the difference between a predetermined initial temperature and the temperature detected by the temperature sensor 46. This makes it possible to calculate the amount with even greater accuracy.

[0132] In this embodiment, the amount of plasma raw material 1 is calculated based on Equation 1. Therefore, as long as two pieces of information are obtained, namely the initial amount, initial temperature, and the detected temperature at a certain amount, it is possible to calculate the corresponding amount for any detected temperature thereafter. In other words, it is possible to simplify the preliminary measurement.

[0133] In this embodiment, the amount is calculated based on a predetermined correspondence relationship between the detected temperature and the amount, which makes it possible to accurately calculate the amount even when the relationship between the detected temperature and the amount is nonlinear.

[0134] Furthermore, in this embodiment, the amount of plasma raw material 1 is calculated as the height of the liquid surface of the plasma raw material 1. This makes it possible to intuitively grasp the amount of plasma raw material 1.

[0135] Furthermore, in this embodiment, the temperature sensor 46 is positioned above the center of the reservoir 40. With this technology, it is possible to calculate the specific amount of plasma raw material 1 when the liquid level is below the temperature sensor 46, so by positioning the temperature sensor 46 higher, the range over which the specific amount can be calculated is expanded, and the amount can be calculated with even greater accuracy.

[0136] In this embodiment, the heater 47 is placed at the bottom 45 of the reservoir 40. The evaporated plasma raw material 1 accumulates in the reservoir 40 due to gravity, so the plasma raw material 1 accumulates first at the bottom 45. By placing the heater 47 at the bottom 45, it is possible to reliably heat the plasma raw material 1 even in the early stages of accumulation. Furthermore, by placing the heater 47 on one side of the bottom 45, an even greater heating effect is achieved.

[0137] Second Embodiment A more detailed embodiment of the light source device 100 according to the present technology will be described as a second embodiment. In the following description, the description of the same parts as those in the configuration and operation of the light source device 100 described in the above embodiment will be omitted or simplified.

[0138] [Double Structure] Figures 6 and 7 are schematic diagrams showing an example of the configuration of a double-structure storage section 59. Similar to Figure 3, Figure 6 shows a cross section of the storage section 59 in the XZ plane at the center, viewed from the positive side in the Y direction. Figure 7 shows a cross section of the storage section 59 in the YZ plane at the center, viewed from the positive side in the X direction. The storage section 59 has a shape similar to that of the storage section 40 in Figure 3, and has a top section 60, a side section 61, and a bottom section 62. In this example, two temperature sensors 46 are arranged on the right side of Figure 6.

[0139] In this example, the side portion 61 has a double structure made up of an outer member 63, an inner member 64, and an internal space S defined between the outer member 63 and the inner member 64. Most of the side portion 61 of the storage portion 59 has a double structure, like the storage portion 54 in Fig. 4, with only a portion of the strip-shaped portion where the temperature sensor 46 is located having a normal structure. This portion corresponds to the right-hand portion in Fig. 6.

[0140] The other portions (the left side of Fig. 6 and the left and right sides of Fig. 7) have a double structure. For example, on the left side of Fig. 6, an outer member 63 is disposed on the outside (left side) and an inner member 64 is disposed on the inside (right side), and an internal space S is formed between them.

[0141] This makes it possible to reduce heat dissipation throughout the storage section 59 while facilitating heat conduction to the temperature sensor 46. For example, if the entire side section 61 were made of a conventional structure made of a material with high thermal conductivity, heat conduction to the temperature sensor 46 would be facilitated, but the heat dissipation characteristics of the entire side section 61 would be extremely high, requiring a lot of energy to maintain the temperature of the plasma raw material 1. By using a conventional structure only in the necessary section (the section where the temperature sensor 46 is located) and a double structure in the other sections, as in this example, it is possible to facilitate heat conduction to the temperature sensor 46 and minimize heat dissipation throughout the entire side section 61.

[0142] This configuration is particularly effective when it is necessary to use a material with high heat dissipation characteristics (such as SUS, iron, aluminum, or copper) for the side portion 61. This makes it possible to select a material with low density but high heat dissipation characteristics, and also makes it possible to reduce the weight of the device.

[0143] In addition, in this example, the internal space S becomes a vacuum when the light source device 100 is operated, but heat dissipation can also be reduced by filling the internal space S with a fibrous material that contains a large amount of space where no material is present, such as a porous material with poor thermal conductivity or steel wool.

[0144] In this example, the upper side of the internal space S is in communication with the interior of the storage section 59. For example, on the left side of Figure 6, the upper side of the internal space S is open, and it is in communication with the space in the storage section 59 where the plasma raw material 1 is present, and the space inside the chamber main body 9.

[0145] In reservoir 59, the liquid level is constantly monitored by the results of detection by temperature sensor 46, and plasma raw material 1 is discarded at the appropriate time, so plasma raw material 1 generally does not overflow. However, there may be cases where the liquid level cannot be monitored due to a malfunction of the device, causing the plasma raw material 1 to overflow. In such cases, in this example, the overflowing plasma raw material 1 enters internal space S from above. When this happens, as internal space S is filled with plasma raw material 1, heat from heater 47 is transferred to side portion 61 and external member 63, causing the temperature of temperature sensor 46 to rise rapidly, making it possible to detect an overflow of plasma raw material 1.

[0146] Of course, a configuration may be adopted in which the upper side of the internal space S is not open and the internal space S is not in communication with the inside of the storage portion 59. In addition, the configurations of the outer member 63, the inner member 64, and the internal space S, such as specific shapes, are not limited.

[0147] [Structure with Partially Different Materials] In this example, the side portion 61 is composed of a first member and a second member having a higher thermal conductivity than the first member. The temperature sensor 46 is disposed in the second member. Here, the double-structured portion (the outer member 63 and the inner member 64) corresponds to the first member according to the present technology, and the normal-structured portion corresponds to the second member. In fact, the normal-structured portion has a higher thermal conductivity than the double-structured portion. The temperature sensor 46 is disposed in the normal-structured portion.

[0148] This is not limiting, and for example, the first member may be made of a certain material, and the second member may be made of a material with a higher thermal conductivity than the material of the first member. That is, rather than creating a difference in thermal conductivity through structural differences such as a normal structure or a double structure, the difference in thermal conductivity may be achieved through the difference in material. This similarly facilitates heat conduction to the temperature sensor 46 while minimizing heat dissipation throughout the side portion 61. Alternatively, the difference in thermal conductivity may be achieved by varying the thickness of the side portion 61. Alternatively, the side portion 61 may be composed of any number of members with different thermal conductivities.

[0149] Third Embodiment [Source Material Container] FIG. 8 is a schematic diagram showing an example configuration of the plasma generation mechanism 6. FIG. 8 illustrates a detailed configuration of the plasma generation mechanism 6 shown in FIG. 2. In this example, a rotor 20 is immersed in the plasma raw material 1 contained in a source material container 21. The source material container 21 has a hollow disk shape, and the plasma raw material 1 is contained therein. The rotor 20 has a disk shape that is slightly smaller than the source material container 21, and its lower part is immersed in the plasma raw material 1 in the source material container 21. In FIG. 8, the source material container 21, rotor 20, and plasma raw material 1 are illustrated with dashed lines. By using such a configuration in which the rotor 20 is immersed as an LPP light source device, it is possible to efficiently generate radiation R. The source material container 21 corresponds to one embodiment of a storage unit according to the present technology.

[0150] Furthermore, the plasma generation mechanism 6 has a cover structure 67. The cover structure 67 has a disk shape that is slightly larger than the source material container 21, and the source material container 21 and the rotor 20 are housed inside it.

[0151] Furthermore, a pipe 68 is provided on the right side of the cover structure 67. The pipe 68 is a tube for supplying the plasma raw material 1 to the raw material container 21. The pipe 68 is provided, for example, at a position above the liquid level expected during use. The opening at the tip of the pipe 68 corresponds to one embodiment of a supply port according to the present technology.

[0152] Furthermore, in the present technology, the temperature sensor 46 is disposed at the same height as or above the tip of the pipe 68. In this example, the temperature sensor 46 is disposed on the left side surface of the cover structure 67, at approximately the same height as the tip of the pipe 68. This is not limiting, and the temperature sensor 46 may be disposed at a higher position, such as in the upper half of the cover structure 67. This makes it less likely that the liquid level will reach above the temperature sensor 46, and the height of the liquid level can be calculated with high accuracy.

[0153] Furthermore, in this technology, the heater 47 is placed at the same height as or below the tip of the pipe 68. In this example, the heater 47 is placed at approximately the 5 o'clock position on the side of the cover structure 67. This is not limitative, and the heater 47 may be placed at the lowest part (6 o'clock position), etc. This allows the plasma raw material 1 to be heated efficiently, making it less likely that the plasma raw material 1 will solidify due to insufficient heating, for example.

[0154] 9 and 10 are schematic diagrams showing variations in the arrangement of the temperature sensor 46 and the heater 47. 9 and 10 show a cross section of the plasma generation mechanism 6 of FIG. 8 taken along the YZ plane at the center in the left-right direction, as viewed from the positive side in the X direction. The chamber main body 9 and other components are omitted from the illustration.

[0155] In the example shown in Figure 9, a space is provided inside the cover structure 67, and a motor 71 is disposed in this space. Furthermore, an opening is provided in the cover structure 67 that connects this space to the outside (the space on the right). A rod-shaped shaft member 72 is disposed in this opening, and the motor 71 is connected to the left side of the shaft member 72, and the center of the back surface (left surface) of the rotating body 20 is connected to the right side. The control unit 7 controls the drive of the motor 71, thereby realizing rotation of the rotating body 20. A mechanical seal 73 is provided between the opening and the shaft member 72. This allows the rotating body 20 to rotate smoothly.

[0156] Two insertion openings 74, one at the top and one at the bottom, are provided on the back surface (left surface) of the cover structure 67, and the temperature sensor 46 is inserted into the upper insertion opening 74. That is, while the temperature sensor 46 is placed on the side of the cover structure 67 in Figure 8, in this example it is placed on the back surface. The right tip of the temperature sensor 46 faces the space in which the plasma raw material 1 exists, across the cover structure 67. Similarly, the heater 47 is placed at the right end of the lower insertion opening 74. That is, the heater 47 is also placed on the back surface.

[0157] This allows for stable placement of the temperature sensor 46 and heater 47. Furthermore, when the rear surface of the cover structure 67 is made of a thick member as in this example, the portion where the motor 71 is not disposed, i.e., the unused portion, can be effectively used as space for placing the temperature sensor 46 and heater 47. This allows for a more compact device.

[0158] 10, the back surface of the cover structure 67 is not thick as in FIG. 9, but the temperature sensor 46 and heater 47 are similarly disposed on the back surface. For example, when space constraints prevent the temperature sensor 46 and heater 47 from being disposed on the side, it is possible to adopt an arrangement such as that of this example. Alternatively, for example, the temperature sensor 46 and heater 47 may be disposed on the surface (right surface) of the cover structure 67.

[0159] Other variations in the placement of the temperature sensor 46 and heater 47 will now be described. The temperature sensor 46 may be placed above the heater 47. Examples of this are shown in Figures 3 and 8. For example, if the temperature sensor 46 is placed above the expected liquid level, and the heater 47 is also placed above the temperature sensor 46, the plasma raw material 1 will not be located near the heater 47, making it difficult for heat to be transferred to the plasma raw material 1. This configuration makes it possible to heat the plasma raw material 1 efficiently.

[0160] The temperature sensor 46 may also be located at the upper end of the side portion 44 of the storage portion 40. That is, the temperature sensor 46 may be located at a position where the upper end of the side portion 44 abuts against the lower surface of the upper portion 43 in Fig. 3. This ensures that the liquid level is always located below the temperature sensor 46, allowing the height of the liquid level to be calculated with high accuracy.

[0161] The heater 47 may also be placed below the center of the storage section 40. The examples of Figures 3 and 8 correspond to this case. That is, the case in which the heater 47 is placed at the bottom as in Figure 3 is also included in the case in which it is placed below the center. Alternatively, for example, the heater 47 may be placed so as to wrap around the side section 44 below the center of the storage section 40. This makes it possible to heat the plasma raw material 1 even more efficiently.

[0162] 6 and 7, six heaters 47 are arranged in the Y direction so as to extend along the X direction, and all of the heaters 47 are embedded in the bottom 62. This embedding of the heaters 47 in the bottom 62 is also included in the case where the heaters 47 are arranged in the bottom 62. This makes it possible to heat the plasma raw material 1 more efficiently. Alternatively, a throw-in type heater 47 may be used. There are no other limitations on the specific arrangement of the temperature sensors 46 and heaters 47.

[0163] <Fourth embodiment> [Circulation system] Fig. 11 is a schematic diagram showing a configuration example of the raw material supplying device 30. Fig. 11 shows a detailed configuration of the raw material supplying device 30 shown in Fig. 2. The raw material supplying device 30 has a storage unit 77, a heater 47, two temperature sensors 78 and 79, pipes 80 and 68, a supply pipe 81, a valve 82, and a pump 83. The storage unit 77 in this example also corresponds to an embodiment of a storage unit according to the present technology.

[0164] The piping 80 is a bent pipe, one end of which is connected to the lower left side of the side of the storage unit 77. The other end is connected to the right side of the raw material container 21 in Figure 2. This allows the plasma raw material 1 to flow from the outside of the storage unit 77 (raw material container 21) through the inside of the piping 80. In Figure 11, the flow direction of the plasma raw material 1 is schematically shown by arrows. The piping 80 corresponds to one embodiment of the first piping according to the present technology.

[0165] The pipe 68 is also a bent pipe, with one end connected to the lower right side of the side of the reservoir 77. The other end is connected to the right side of the source material container 21 in Figure 2. This allows the plasma raw material 1 to flow through the inside of the pipe 68 and into the source material container 21. The pipe 68 corresponds to an embodiment of the second pipe according to the present technology.

[0166] Supply pipe 81 is, for example, a straight pipe, and is inserted from above reservoir 77 so that one end (opening) faces the liquid surface of plasma raw material 1. Supply pipe 81 supplies plasma raw material 1 to reservoir 77. Supply pipe 81 corresponds to one embodiment of the third pipe according to the present technology. There are no other limitations on the diameters or specific shapes of pipes 80 and 68 and supply pipe 81. For example, pipes 80 and 68 may be straight, or supply pipe 81 may be bent.

[0167] In this technique, at least one of the pipes 80 and 68 and the supply pipe 81 has a pump for moving the plasma raw material 1. In this example, only the pipe 68 has a pump 83. The pump 83 may be any type of pump and is disposed midway along the pipe 68.

[0168] Pump 83 moves the plasma raw material 1. That is, when pump 83 is driven, a flow of plasma raw material 1 is generated inside pipes 80 and 68, and the plasma raw material 1 flows into and out of reservoir 77 and raw material container 21. The drive of pump 83 is controlled by control unit 7. Conversely, when the drive of pump 83 is stopped, the flow of plasma raw material 1 into and out of reservoir 77 and the like is stopped. The drive rate of pump 83 (the flow rate of plasma raw material 1) and the like are also controlled.

[0169] Alternatively, for example, pipe 80 or supply pipe 81 may have pump 83. Alternatively, pipes 80 and 68 and supply pipe 81 may all have pump 83. Such a configuration for circulating plasma raw material 1 is generally sometimes called a circulation system.

[0170] Supply pipe 81 also has valve 82. Valve 82 may be any type of valve, such as a gate valve. Valve 82 controls the movement of plasma raw material 1. That is, by controlling the opening and closing of valve 82 by control unit 7, the flow of plasma raw material 1 inside supply pipe 81 is controlled, and whether or not plasma raw material 1 is supplied to reservoir 77 is controlled. The supply rate of plasma raw material 1 may be controlled by controlling the degree to which valve 82 is open.

[0171] Temperature sensor 78 is located above the right side of storage section 77. Temperature sensor 79 is located below the right side of storage section 77. That is, in this example, the amount of plasma raw material 1 is calculated based on the temperature detected by temperature sensor 78, and at the same time, the amount is calculated based on the temperature detected by temperature sensor 79. In this case, for example, a process may be performed in which the average of the two amounts is used as the final calculated amount. This allows the amount to be calculated with even greater accuracy. When the amount is calculated using (Equation 1), some error may occur due to the linear approximation, so this method is particularly effective.

[0172] Alternatively, the upper temperature sensor 78 may be used as a sensor for determining the upper limit, and the lower temperature sensor 79 may be used as a sensor for determining the supply. Specifically, when the liquid level reaches the upper temperature sensor 78, it is determined that there is a risk of plasma raw material 1 overflowing, and a notification is issued to stop the supply. Alternatively, the control unit 7 may control the operation of the storage unit 77, and the supply may be stopped automatically. Furthermore, this determination may be made not when the liquid level reaches the temperature sensor 78, but when the liquid level approaches a certain level.

[0173] Furthermore, if the liquid level drops to the lower temperature sensor 79, it is determined that there is a risk of a shortage of plasma raw material 1, and a notification is issued to the effect that supply should be initiated. In this case as well, supply may be automatic by having the control unit 7 control the operation of valve 82 on supply pipe 81. Alternatively, this determination may be made when the liquid level exceeds the position of temperature sensor 79 and then drops further to a certain extent. This makes it possible to more appropriately determine the timing for supplying plasma raw material 1.

[0174] In this way, in this technology, multiple temperature sensors are arranged as temperature sensors. In this example, two temperature sensors 78 and 79 are arranged, but three or more temperature sensors may be arranged. This makes it possible to calculate the amount of plasma raw material 1 with even greater accuracy. Furthermore, the specific arrangement of each temperature sensor is not limited. Multiple temperature sensors may be arranged in the reservoir 40 or raw material container 21 in FIG. 2.

[0175] Similarly, multiple heaters 47 may be arranged in the reservoirs 40 and 77 and the raw material container 21. This allows for even more efficient heating of the plasma raw material 1. Alternatively, the heater 47 may be arranged in the pipes 68 and 80 or the supply pipe 81. For example, the heater 47 may be arranged so as to be wrapped around the pipe 68.

[0176] Alternatively, temperature sensors 78 and 79 may detect the temperature while the flow of plasma raw material 1 in reservoir 77 is stopped. Specifically, for example, control unit 7 closes valve 82 and stops driving pump 83, completely stopping the flow of plasma raw material 1 in reservoir 77. Then, control unit 7 sends instructions to temperature sensors 78 and 79 to detect the temperature, and the temperature of plasma raw material 1 in a stationary state is detected. This allows the temperature to be detected while heat transfer in plasma raw material 1 is suppressed, making it possible to calculate the amount with even greater accuracy. There are no particular limitations on the specific method for detecting the temperature while the flow of plasma raw material 1 is stopped.

[0177] <Fifth Embodiment> [Recycling of Raw Material] Figure 12 is a schematic diagram showing an example configuration of a plasma generation mechanism 6 capable of recycling the plasma raw material 1. In this example, the supply pipe 81 comprises a tip 86 (to the left of the valve 82) and a pipe section 87 (to the right or below the valve 82). One end of the pipe section 87 is connected to the right side of the side section 44 of the reservoir 40, and the other end is connected to the valve 82. The reservoir 40 corresponds to an embodiment of a reservoir other than the reservoir 77 according to the present technology.

[0178] Furthermore, a pump 83 is provided in pipe section 87. When valve 82 is opened and pump 83 is driven, a flow of plasma raw material 1 is generated inside pipe section 87, and the plasma raw material moves from reservoir 40 to reservoir 77.

[0179] The plasma raw material 1 stored in reservoir 40 is scattered material, and may be reusable. In this case, it is possible to manually transfer the plasma raw material 1 from reservoir 40 to reservoir 77, but this would be a time-consuming process. By using a configuration such as that of this example, the plasma raw material 1 is automatically transferred from reservoir 40 to reservoir 77, reducing the labor required for reuse. Note that the system of this example, as well as the example shown in Figure 11, is sometimes generally referred to as a circulation system.

[0180] Sixth Embodiment [Heater-Side Temperature Sensor] A temperature sensor may be placed on the heater side, and the heater 47 may heat the plasma raw material 1 based on the temperature detected by the heater-side temperature sensor, thereby maintaining the temperature of the plasma raw material 1 at a predetermined temperature.

[0181] 6, 9, and 10, a temperature sensor 90 is placed near the heater 47 as a heater-side temperature sensor. In this example, the temperature is detected by the temperature sensor 90, and the detected temperature is acquired by the control unit 7. If the detected temperature is lower than a predetermined temperature, the drive of the heater 47 is controlled to increase the output. Conversely, if the detected temperature is higher than the predetermined temperature, the drive of the heater 47 is controlled to decrease the output. In other words, the temperature of the plasma raw material 1 is fed back to the heater 47, and the heater 47 is driven.

[0182] This makes it possible to maintain the temperature of the plasma raw material 1 with precision, preventing, for example, a drop in the temperature of the plasma raw material 1 and solidification. Of course, a configuration in which the temperature sensor 90 is not provided and the heater 47 performs heating at a constant output may be adopted. The heater 47 corresponds to an embodiment of the heating mechanism according to the present technology. The temperature sensor 90 corresponds to an embodiment of the second temperature sensor according to the present technology. The heater 47 and the temperature sensor 90 correspond to an embodiment of the temperature adjustment mechanism according to the present technology.

[0183] 10, the temperature sensor 90 is placed below the liquid level together with the heater 47. Therefore, the liquid level is located above the temperature sensor 90, and it is not possible to calculate the specific amount of plasma raw material 1. In other words, the temperature sensor 90 is used only to control the heater 47.

[0184] There are no other limitations on the specific arrangement of the temperature sensors 90. For example, when multiple heaters 47 are provided, one temperature sensor 90 may be provided for each heater 47. Alternatively, multiple temperature sensors 90 may be provided for one heater 47.

[0185] Other Embodiments The present technology is not limited to the above-described embodiments, and various other embodiments can be realized.

[0186] [Types of Plasma Raw Material] The plasma raw material 1 can be tin, lithium, gadolinium, gallium, bismuth, indium, or an alloy containing at least one of these materials. For example, if EUV light is extracted as the radiation R and the EUV light is used in a microscope, bismuth is used as the material. Also, if X-rays are generated as the radiation R, indium is used as the material. By using these materials, it is possible to generate high-quality radiation R. There are no other specific limitations on the type of plasma raw material 1.

[0187] Furthermore, not only liquid raw material but also any form of plasma raw material 1 may be used, such as powder, or a solution raw material mixed with powder, etc. Furthermore, this technology is also applicable to cases where the contents stored in the storage unit 40 are not raw material.

[0188] [Container Configuration] The side 44 of the reservoir 40 is made of, for example, ceramic, stainless steel, or silicon. The other components of the reservoir 40 may be made of any material. For example, if the plasma raw material 1 is corrosive, the reservoir 40 may be made of a corrosion-resistant material. Alternatively, the inner wall may be coated with a corrosion-resistant material. This allows for the selection of inexpensive materials. The side 44 is also configured to have a thickness of, for example, 1 mm to 20 mm. Alternatively, it may be configured to have a thermal conductivity of 10 W / (m×k) to 200 W / (m×k) at 300 K. This makes it possible to calculate the amount of plasma raw material 1 with even greater accuracy.

[0189] [Application to Other Devices] In this example, the case where the present technology is applied to an LPP light source device has been described, but the present technology is not limited thereto and may be applied to a DPP type or LDP type light source device. Alternatively, the present technology may be applied to a container of raw material used in a device other than a light source device.

[0190] [Configuration of Information Processing Device] The calculated amount and detected temperature may be transmitted to the outside by a communication unit possessed by the information processing device 48. The amount and detected temperature may also be stored in a memory unit. The information processing device 48 may also have a display unit and an operation unit. The display unit is, for example, a display device using liquid crystal, EL (Electro-Luminescence), or the like, and displays the amount, detected temperature, various images, various GUIs (Graphical User Interfaces), etc. to the user using the light source device 100. The operation unit is, for example, a keyboard, pointing device, touch panel, or other operation device. If the operation unit includes a touch panel, the touch panel may be integrated with the display unit. The user may be able to supply or discard the plasma raw material 1 by operating the operation unit.

[0191] The light source device, plasma generation mechanism, plasma raw material, rotor, raw material container, raw material supply device, storage unit, temperature sensor, heater, information processing device, piping, supply pipe, valve, pump, etc. described with reference to the drawings are merely one embodiment and can be arbitrarily modified without departing from the spirit of the present technology. In other words, any other configuration for implementing the present technology may be adopted.

[0192] In the present disclosure, when the word "approximately" is used, this is used merely to facilitate understanding of the description, and the use or non-use of the word "approximately" does not have any special meaning. That is, in the present disclosure, concepts that define shape, size, positional relationship, state, etc., such as "center," "central," "uniform," "equal," "same," "orthogonal," "parallel," "symmetrical," "extended," "axial direction," "cubic," "rectangular," "cone," "disk," "polygonal," "cylinder," "spherical," "prismatic," and "rod," are concepts that include "substantially center," "substantially central," "substantially uniform," "substantially equal," "substantially the same," "substantially orthogonal," "substantially parallel," "substantially symmetrical," "substantially extended," "substantially axial direction," "substantially cubic," "substantially rectangular," "substantially cone," "substantially disk," "substantially polygonal," "substantially cylindrical," "substantially spherical," "substantially prismatic," and "substantially rod-shaped," etc. For example, states that fall within a predetermined range (e.g., a range of ±10%) based on "perfectly centered," "perfectly central," "perfectly uniform," "perfectly equal," "perfectly the same," "perfectly orthogonal," "perfectly parallel," "perfectly symmetrical," "perfectly extended," "substantially cubic," "substantially rectangular," "substantially cone-shaped," "substantially disc-shaped," "substantially polygonal," "substantially cylindrical," "substantially spherical," "substantially prismatic," "substantially rod-shaped," etc. are also included. Therefore, even if the word "approximately" is not added, a concept expressed by adding "approximately" can be included. Conversely, a state expressed by adding "approximately" does not exclude a perfect state.

[0193] In the present disclosure, expressions using "than", such as "greater than A" and "smaller than A", are expressions that comprehensively include both concepts that include the case where it is equivalent to A and concepts that do not include the case where it is equivalent to A. For example, "greater than A" is not limited to cases that do not include equivalent to A, but also includes "A or greater". Furthermore, "smaller than A" is not limited to "less than A" but also includes "A or less". When implementing the present technology, specific settings and the like can be appropriately adopted from the concepts included in "greater than A" and "smaller than A" so that the effects described above can be achieved.

[0194] It is also possible to combine at least two of the features of the present technology described above. That is, the various features described in each embodiment may be arbitrarily combined without distinguishing between the embodiments. Furthermore, the various effects described above are merely examples and are not intended to be limiting, and other effects may also be achieved.

[0195] DESCRIPTION OF SYMBOLS 1... Plasma raw material 6... Plasma generation mechanism 7... Control unit 20... Rotating body 21... Raw material container 30... Raw material supply device 40, 54, 59, 77... Storage section 44, 55, 56, 61... Side section 45... Bottom section 46, 78, 79, 90... Temperature sensor 47... Heater 48... Information processing device 49... Controller 51... Calculation section 63... Outer member 64... Inner member 68, 80... Piping 81... Supply pipe 82... Valve 83... Pump 100... Light source device

Claims

1. A storage device comprising: a storage section for storing contents and having a side; a first temperature sensor arranged on the exterior surface of the side; a temperature adjustment mechanism capable of maintaining the temperature of the contents stored in the storage section at a predetermined temperature; and a calculation section for calculating the amount of the contents stored in the storage section based on the temperature detected by the first temperature sensor.

2. A storage device according to claim 1, wherein the calculation unit calculates the amount of the contents based on the difference between a predetermined initial temperature and the temperature detected by the first temperature sensor.

3. A storage device according to claim 2, wherein the calculation unit calculates the amount of the contents by the following formula: V: amount of the content k: predetermined coefficient T ｘ : Temperature detected by the first temperature sensor T ０ : the predetermined initial temperature 4. The storage device according to claim 3, ０ The value of is 100° C. or more.

5. The storage device according to claim 3 or 4, ｘ The value of T ０ The difference in the values ​​is 100° C. or less.

6. A storage device as claimed in claim 1, wherein the calculation unit calculates the amount of the contents based on the temperature detected by the first temperature sensor and a predefined correspondence between the temperature and the amount of the contents.

7. A storage device according to claim 1 or 2, wherein the calculation unit calculates the height of a surface of the content stored in the storage unit.

8. A storage device according to claim 1 or 2, wherein the first temperature sensor is disposed above the temperature adjustment mechanism.

9. A storage device according to claim 1 or 2, wherein the first temperature sensor is disposed above the center of the storage section.

10. A container according to claim 9, wherein the first temperature sensor is disposed at an upper end of a side portion of the container section.

11. A storage device according to claim 1 or 2, wherein the temperature adjustment mechanism is disposed below the center of the storage section.

12. A storage device according to claim 11, wherein the storage section has a bottom, and the temperature adjustment mechanism is disposed at the bottom of the storage section.

13. A storage device according to claim 1 or 2, wherein a rotating body is immersed in the contents stored in the storage section.

14. A storage device according to claim 13, wherein the storage section is provided with a supply port for supplying the contents to the storage section, and the first temperature sensor is disposed at the same height as or above the supply port.

15. A storage device according to claim 13, wherein the storage section is provided with a supply port for supplying the contents to the storage section, and the temperature adjustment mechanism is disposed at the same height as or below the supply port.

16. A storage device according to claim 1 or 2, wherein the first temperature sensor is a plurality of the first temperature sensors.

17. A storage device as described in claim 1 or 2, wherein the temperature adjustment mechanism includes a heating mechanism that heats the contents stored in the storage section, and a second temperature sensor, and the heating mechanism maintains the temperature of the contents at a predetermined temperature by heating the contents based on the temperature detected by the second temperature sensor.

18. The container according to claim 17, wherein the second temperature sensor is disposed above the heating mechanism.

19. A storage device as claimed in claim 1 or 2, wherein a first pipe for allowing the contents to flow in from the outside and a second pipe for allowing the contents to flow out to the outside are connected to the storage section, and a third pipe for supplying the contents to the storage section is inserted from above.

20. A storage device according to claim 19, wherein the third pipe has a valve for controlling the movement of the contents, and another storage section is connected to the third pipe.

21. The containment device of claim 19, wherein at least one of the first pipe, the second pipe, and the third pipe includes a pump for moving the contents.

22. A container device according to claim 1 or 2, wherein the side portion is made of ceramics, stainless steel, or silicon.

23. A storage device according to claim 1 or 2, wherein the side portion has a thickness of 1 mm or more and 20 mm or less.

24. A container according to claim 1 or 2, wherein the side portion has a thermal conductivity of 10 W / (m×k) or more and 200 W / (m×k) or less at 300K.

25. A storage device according to claim 1 or 2, wherein the side portion is constituted by a first member and a second member having a higher thermal conductivity than the first member, and the first temperature sensor is disposed on the second member.

26. A container device according to claim 1 or 2, wherein the side portion has a double structure consisting of an outer member, an inner member, and an internal space defined between the outer member and the inner member.

27. A storage device according to claim 26, wherein the internal space communicates with the interior of the storage section at an upper side.

28. A storage device according to claim 1 or 2, wherein the contents are a liquid raw material.

29. The containment device of claim 28, wherein the liquid feedstock is tin, lithium, gadolinium, gallium, bismuth, indium, or an alloy containing at least one of these materials.

30. A storage device according to claim 1 or 2, wherein the contents are powdered raw materials.

31. A storage volume calculation method for a storage device comprising: a storage section that stores contents and has a side; a first temperature sensor arranged on the exterior surface of the side; and a temperature adjustment mechanism that can maintain the temperature of the contents stored in the storage section at a predetermined temperature, the method calculating the amount of the contents stored in the storage section based on the temperature detected by the first temperature sensor.

32. A method for calculating a capacity as claimed in claim 31, comprising the step of detecting the temperature by the first temperature sensor in a state where the flow of the contents inside the storage section is stopped.

33. A light source device that generates radiation by converting a raw material into plasma using irradiation with an energy beam, comprising: a storage device having: a storage section that stores the raw material and has a side; a first temperature sensor that is arranged on the outer surface of the side; a temperature adjustment mechanism that is capable of maintaining the temperature of the raw material stored in the storage section at a predetermined temperature; and a calculation section that calculates the amount of the raw material stored in the storage section based on the temperature detected by the first temperature sensor.

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