Film discharge treatment device and method for producing discharge treated film

The film discharge treatment device addresses the challenge of simultaneous and stable treatment of both film sides by using a non-contact gas jetting system, reducing scratches and deformation, and enhancing surface properties and adhesion.

WO2025004969A1PCT designated stage expired Publication Date: 2025-01-02ZEON CORP
View PDF 6 Cites 0 Cited by

Patent Information

Application Number
PCT/JP2024/022466
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2023-06-28
Filing Date
2024-06-20
Publication Date
2025-01-02

AI Technical Summary

Technical Problem

Existing film discharge treatment methods face challenges in performing stable discharge treatment on both sides of a film simultaneously while minimizing scratches and deformation, particularly due to high film tension and mechanical issues with conventional conveyance devices.

Method used

A film discharge treatment device featuring a discharge section with a first and second electrode, and a film transport section with porous gas ejection surfaces that allow for non-contact gas jetting, reducing tension and mechanical stress on the film, enabling stable and simultaneous treatment of both sides.

Benefits of technology

The solution allows for stable discharge treatment of both film sides with reduced scratches and deformation, improving the film's surface properties and adhesion capabilities, while also simplifying the treatment process and reducing equipment size and costs.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure JP2024022466_02012025_PF_FP_ABST
    Figure JP2024022466_02012025_PF_FP_ABST
Patent Text Reader

Abstract

This film discharge treatment device includes: a discharge unit including a first electrode and a second electrode; and a film conveyance unit configured to pass a film between the first electrode and the second electrode. The film conveyance unit includes a first gas ejection part including a first gas ejection surface, the first gas ejection part being formed of a porous material and configured to eject gas from the first gas ejection surface.
Need to check novelty before this filing date? Find Prior Art

Description

Film discharge treatment device and method for manufacturing discharge-treated film

[0001] The present invention relates to a film discharge treatment device and a method for producing a discharge-treated film.

[0002] When a functional layer is provided on the surface of a resin film, a discharge treatment such as plasma treatment may be performed on the surface of the resin film in order to improve adhesion between the resin film and the functional layer. A technique for performing plasma treatment on both sides of a film, one side at a time, is known (see Patent Document 1). Another technique is known in which a coating liquid is applied to one side of the film as a surface treatment, and then the other side of the film is coated with the coating liquid while the film is being transported by a specific floating transport device (see Patent Document 2). Another technique is known in which a film is placed between an upper electrode and a lower electrode and plasma discharge treated (see, for example, Example 1 of Patent Document 3).

[0003] International Publication No. 2018 / 221248 International Publication No. 2022 / 172747 Japanese Patent Application Laid-Open No. 2006-337565

[0004] In the technology of Patent Document 1, plasma treatment of a film is performed while the film is in contact with a cooling roll. During discharge treatment, heat is typically generated, which may cause deformation of the film. If the film deforms on the cooling roll, the contacting cooling roll may scratch the film. Furthermore, in the technology of Patent Document 1, a film reversing device is used that changes the side of the film that comes into contact with the cooling roll in order to perform sequential plasma treatment on both sides of the film on a single cooling roll. Using a film reversing device requires a certain level of film tension. High film tension makes the film more susceptible to deformation, which may result in scratches on the film.

[0005] The technology of Patent Document 2 uses a floating transport device in which edge rings are arranged at both axial ends of a gas ejection member. The film is transported by contacting both widthwise ends of the edge ring with the edge ring and rotating the edge ring. With the technology of Patent Document 2, it can be difficult to perform surface treatment on the portion of the film that contacts the edge ring. Furthermore, mechanical loss may occur when rotating the edge ring. Furthermore, it can be difficult to control the floating amount of the film from the floating transport device to a constant level. In particular, the floating amount at both widthwise ends of the transported film tends to be smaller than the floating amount at the center of the film in the width direction. As a result, the technology of Patent Document 2 can be difficult to stably transport the film and to stably perform surface treatment on the film.

[0006] Therefore, there is a need for a film discharge treatment device that can perform stable discharge treatment on both sides of a film simultaneously and reduce the occurrence of scratches on the film; and a method for producing a discharge-treated film that can produce a film that has been discharge-treated on both sides and is less likely to develop scratches.

[0007] The present inventors conducted extensive research to solve the above-mentioned problems and discovered that a film discharge treatment device including a predetermined discharge section and a predetermined film transport section can stably discharge both sides of a film while reducing the occurrence of scratches, and thus completed the present invention.

[0008] <1> A film discharge treatment device comprising: a discharge unit including a first electrode and a second electrode; and a film transport unit configured to pass a film between the first electrode and the second electrode, wherein the film transport unit includes a first gas ejection unit including a first gas ejection surface, formed of a porous material, and configured to eject gas from the first gas ejection surface. <2> The film discharge treatment device according to <1>, wherein the film transport unit further includes a second gas ejection unit including a second gas ejection surface, formed of a porous material, and configured to eject gas from the second gas ejection surface, wherein the first gas ejection surface and the second gas ejection surface face each other and are spaced apart from each other, and the film transport unit is configured to pass the film between the first gas ejection surface and the second gas ejection surface. <3> The film discharge treatment device according to <1> or <2>, wherein the porous material is a dielectric. <4> The film discharge processor according to <2>, wherein the porous material is a dielectric, and the first electrode and the second electrode are each covered by the first gas ejection part or the second gas ejection part. <5> The film discharge processor according to <2> or <4>, wherein the first gas ejection part includes a convex part extending in a normal direction D of a plane including the transport direction of the film, the convex part having a curved surface that is the first gas ejection surface, and the second gas ejection part includes a concave part extending in the normal direction D, the convex part having a curved surface that is the second gas ejection surface. <6> The film discharge processor according to <5>, wherein the first gas ejection part includes a plurality of the convex parts and the second gas ejection part includes a plurality of the concave parts. <7> The film discharge processor according to any one of <1> to <6>, wherein the porous material is ceramic. <8> The film discharge processor according to any one of <1> to <7>, wherein the porous material is a ceramic containing barium titanate. <9> The film discharge processor according to any one of <1> to <8>, wherein the film transport section and the discharge section are provided adjacent to each other along the film transport direction. <10> The film discharge processor according to any one of <1> to <9>, wherein the gas ejection surface is flat.<11> The film discharge processing device according to any one of <1> to <10>, wherein the film transport section includes an air compressor connected to the gas blowout section, and the air compressor is configured to pump and feed gas containing 99% or more by volume of nitrogen gas. <12> The film discharge processing device according to any one of <1> to <11>, wherein the film is a resin film. <13> The film discharge processing device according to any one of <1> to <12>, further including an exhaust device configured to exhaust the gas blown out from the gas blowout section. <14> A method for producing a discharge-treated film using the film discharge treatment device according to any one of <1> to <13>, comprising: a step in which the film transport unit passes the film between the first electrode and the second electrode, and ejects gas from the first gas ejection surface, and transports the film without contacting the first gas ejection surface; and a step in which the discharge unit generates a discharge between the first electrode and the second electrode, and discharges both sides of the film passed between the first electrode and the second electrode, thereby obtaining a discharge-treated film. <15> A method for producing a discharge-treated film using the film discharge treatment device according to any one of <2> to <14>, comprising: a step in which the film transport unit passes the film between the first electrode and the second electrode, and ejects gas from the first gas ejection surface and the second gas ejection surface, passes the film between the first gas ejection surface and the second gas ejection surface, and transports the film in a state of not contacting the first gas ejection surface and the second gas ejection surface; and a step in which the discharge unit generates a discharge between the first electrode and the second electrode, and discharges both sides of the film passed between the first electrode and the second electrode, thereby obtaining a discharge-treated film.

[0009] The present disclosure also provides the following: <1-1> A film discharge treatment device comprising: a discharge section including a first electrode and a second electrode; and a film transport section configured to pass a film between the first electrode and the second electrode, wherein the film transport section comprises: a first gas ejection section including a first gas ejection surface, formed of a porous material, and configured to eject gas from the first gas ejection surface; and a second gas ejection section including a second gas ejection surface, formed of a porous material, and configured to eject gas from the second gas ejection surface, wherein the first gas ejection surface and the second gas ejection surface are opposed to and spaced apart from each other, and the film transport section is configured to pass the film between the first gas ejection surface and the second gas ejection surface. <1-2> The film discharge processor according to <1-1>, wherein the porous material forming each of the first gas ejection part and the second gas ejection part is a dielectric, and wherein the first electrode and the second electrode are covered by the first gas ejection part or the second gas ejection part, respectively. <1-3> The film discharge processor according to <1-1> or <1-2>, wherein the porous material forming each of the first gas ejection part and the second gas ejection part is a ceramic. <1-4> The film discharge processor according to any one of <1-1> to <1-3>, wherein the porous material forming each of the first gas ejection part and the second gas ejection part is a ceramic containing barium titanate. <1-5> The film discharge processor according to any one of <1-1> to <1-4>, wherein the film transport part and the discharge part are provided adjacent to each other in the film transport direction. <1-6> The film discharge processing device according to any one of <1-1> to <1-5>, wherein the first gas ejection surface and the second gas ejection surface are flat. <1-7> The film discharge processing device according to any one of <1-1> to <1-5>, wherein the first gas ejection part includes a convex part that extends in a normal direction D of a plane that includes the film transport direction and has a curved surface that is the first gas ejection surface, and the second gas ejection part includes a concave part that extends in the normal direction D and has a curved surface that is the second gas ejection surface.<1-8> The film discharge processor according to <1-7>, wherein the first gas ejection section includes a plurality of the convex portions and the second gas ejection section includes a plurality of the concave portions. <1-9> The film discharge processor according to any one of <1-1> to <1-8>, wherein the film transport section includes an air pressurizing device connected to each of the first gas ejection section and the second gas ejection section, and the air pressurizing device is configured to pressurize and feed gas containing 99% or more by volume of nitrogen gas. <1-10> The film discharge processor according to any one of <1-1> to <1-9>, wherein the film is a resin film. <1-11> The film discharge processor according to any one of <1-1> to <1-10>, further including an exhaust device configured to exhaust gas ejected from the first gas ejection section and the second gas ejection section. <1-12> A method for producing a discharge-treated film using the film discharge treatment device according to any one of <1-1> to <1-11>, comprising: a step in which the film transport unit passes the film between the first electrode and the second electrode, and ejects gas from the first gas ejection surface and the second gas ejection surface, passes the film between the first gas ejection surface and the second gas ejection surface, and transports the film in a state of not contacting the first gas ejection surface and the second gas ejection surface; and a step in which the discharge unit generates a discharge between the first electrode and the second electrode, and discharges both sides of the film passed between the first electrode and the second electrode, thereby obtaining a discharge-treated film.

[0010] According to the present invention, it is possible to provide a film discharge treatment device that can perform stable discharge treatment on both sides of a film simultaneously, thereby reducing the occurrence of scratches on the film; and a method for producing a discharge-treated film that can produce a film that has been discharge-treated on both sides and is therefore less likely to develop scratches.

[0011] FIG. 1 is a schematic diagram showing a film discharge processing device according to a first embodiment. FIG. 2 is a schematic diagram showing a film discharge processing device according to a second embodiment. FIG. 3 is a schematic diagram showing a film discharge processing device according to a third embodiment. FIG. 4 is a perspective view showing a first gas ejection section according to a third embodiment. FIG. 5 is a perspective view showing a second gas ejection section according to the third embodiment. FIG. 6 is a schematic diagram showing a film discharge processing device according to a fourth embodiment. FIG. 7 is a perspective view showing a first gas ejection section according to the fourth embodiment. FIG. 8 is a perspective view showing a second gas ejection section according to the fourth embodiment. FIG. 9 is a schematic diagram showing a film discharge processing device according to a fifth embodiment.

[0012] The present invention will be described in detail below with reference to embodiments and examples. However, the present invention is not limited to the embodiments and examples shown below, and can be implemented with any modifications within the scope of the claims of the present invention and their equivalents. The components of the embodiments shown below can be combined as appropriate. In addition, in the drawings, the same components are designated by the same reference numerals, and their description may be omitted.

[0013] In the following description, a "long" film refers to a film having a length that is 5 times or more its width, preferably 10 times or more its width, and specifically refers to a film having a length that can be wound into a roll for storage or transportation. There is no particular upper limit to the length of the film, and it can be, for example, 100,000 times or less its width.

[0014] In the following description, the machine direction (MD) of the film generally coincides with the longitudinal direction of a long film.

[0015] In the following description, the width direction of the film means the in-plane direction of the film, which is perpendicular to the longitudinal direction.

[0016] In the following description, unless otherwise specified, the terms "upstream" and "downstream" refer to the upstream and downstream in the film transport direction.

[0017] In the following description, unless otherwise specified, the directions of elements as "parallel," "vertical," and "orthogonal" may include an error within a range that does not impair the effects of the present invention, for example, within a range of ±5°, ±3°, ±2°, or ±1°.

[0018] <1. Overview of the film discharge processing device> A film discharge processing device according to one embodiment of the present invention includes: a discharge section including a first electrode and a second electrode; and a film transport section configured to pass a film between the first electrode and the second electrode, wherein the film transport section includes a first gas ejection section including a first gas ejection surface, formed of a porous material, and configured to eject gas from the first gas ejection surface.

[0019] Since the film discharge treatment device according to this embodiment includes the discharge unit and the film transport unit, the film can be transported without contacting the gas ejection surface, and the discharge unit can discharge both sides of the film being transported without contacting the gas ejection surface. Because a single discharge unit can discharge both sides of the film simultaneously, the film discharge treatment device can be made smaller and less expensive.

[0020] Furthermore, since the discharge section is configured to discharge the film while it is not in contact with the film transport section, even if the dimensions of the film to be treated fluctuate due to factors such as fluctuations in the conditions when manufacturing the film or the heat applied to the film when it is discharged, the discharge-treated film is less likely to be scratched due to contact with the film transport section.

[0021] Because the film is transported without contact with the film transport section, the discharge treatment can be performed while the film is transported under low tension, which reduces film deformation due to tension during the discharge treatment and reduces the occurrence of scratches on the discharge-treated film.

[0022] Furthermore, since the gas that constitutes the discharge atmosphere and the gas that is ejected from the gas ejection section are usually the same, the equipment for supplying the gas that constitutes the discharge atmosphere and the equipment for supplying the gas for transporting the film can be unified.

[0023] Furthermore, in a preferred embodiment of the film discharge processing device of the present invention, the film transport section further includes a second gas ejection section that includes a second gas ejection surface and is formed of a porous material and configured to eject gas from the second gas ejection surface, the first gas ejection surface and the second gas ejection surface are opposite and spaced apart from each other, and the film transport section is configured to pass the film between the first gas ejection surface and the second gas ejection surface.

[0024] The film transport section is equipped with a first gas ejection section and a second gas ejection section, and is configured so that the film passes between the first gas ejection surface and the second gas ejection surface, so that the distance from the first gas ejection surface or the second gas ejection surface can be kept constant or nearly constant at both ends and the center of the film in the width direction as it is transported. As a result, the discharge treatment of the film can be carried out stably, and unevenness in the discharge treatment of the film can be reduced.

[0025] 2. Embodiments of Film Discharge Processing Apparatus 2.1. First Embodiment A film discharge processing apparatus according to a first embodiment will now be described with reference to the drawings. Fig. 1 is a schematic diagram illustrating a film discharge processing apparatus according to the first embodiment.

[0026] The film discharge processing device 100 includes a discharge section 110 , a film transport section 120 , an air pressurizing device 130 , an exhaust device 140 , and a case 150 .

[0027] The discharge unit 110 includes a first electrode 111 and a second electrode 112. The film transport unit 120 includes a first gas ejection unit 121 and a second gas ejection unit 122. The first gas ejection unit 121 and the second gas ejection unit 122 include a first gas ejection surface 121S and a second gas ejection surface 122S, respectively. The first gas ejection unit 121 and the second gas ejection unit 122 are each formed of a porous material. An air compression device 130 is connected to each of the first gas ejection unit 121 and the second gas ejection unit 122.

[0028] Case 150 is a housing that separates from the outside a chamber for performing discharge treatment on film 1. Discharge unit 110 and film transport unit 120 are housed within case 150.

[0029] The case 150 has an opening (not shown) for taking in and sending out the film 1. The case 150 is also connected to the intake port 141 of the exhaust device 140.

[0030] In this embodiment, the porous material forming the first gas ejection part 121 and the second gas ejection part 122 is a dielectric. The first gas ejection part 121 and the second gas ejection part 122 may be formed of different types of porous materials, or may be formed of the same porous material. The dielectric may be a material having a relative dielectric constant of 2 or more at 25°C. An example of a dielectric material that is a porous material is porous ceramic, and a specific example of a component contained in ceramic is barium titanate (BaTiO 3 ); aluminum titanate; wollastonite; forsterite (Mg 2 SiO 4 ); aluminum oxide (Al 2 O 3 ); barium magnesium niobate (Ba(Mg 1/3 Nb 2/3 ) O 3 ); barium neodymium titanate (Ba 3 Nd 9.3 Ti 18 O 54 ); boron nitride; The ceramic may contain a plurality of these materials. In one embodiment, the porous material forming the first gas ejection part 121 and the second gas ejection part 122 is a ceramic containing barium titanate.

[0031] By using a dielectric as the porous material forming the first gas ejection section 121 and the second gas ejection section 122, it is possible to easily realize a configuration in which the first electrode 111 and the second electrode 112 face each other via a dielectric.

[0032] The first gas ejection part 121 is configured to eject gas from a first gas ejection surface 121S, and the second gas ejection part 122 is configured to eject gas from a second gas ejection surface 122S. Because the first gas ejection part 121 and the second gas ejection part 122 are formed of a porous material, the first gas ejection surface 121S, which is the surface of the first gas ejection part 121, and the second gas ejection surface 122S, which is the surface of the second gas ejection part 122, have a plurality of holes. In addition, when gas is pressurized from the compressed air device 130 connected to the first gas ejection section 121 and the second gas ejection section 122 of the film conveying section 120 to the first gas ejection section 121 and the second gas ejection section 122, gas is ejected from multiple holes in the first gas ejection surface 121S and the second gas ejection surface 122S.

[0033] The compressed air device 130 is configured to pump and feed gas to be supplied to the space between the first gas ejection surface 121S and the second gas ejection surface 122S to create an atmosphere for the discharge treatment. For example, if the atmosphere for the discharge treatment is air, the compressed air device 130 pumps and feeds air. Also, if the atmosphere for the discharge treatment is nitrogen gas, the compressed air device 130 pumps and feeds nitrogen gas. For example, the compressed air device 130 is configured to pump and feed gas containing 99% or more by volume of nitrogen gas.

[0034] In this embodiment, the first gas ejection surface 121S and the second gas ejection surface 122S face each other and are spaced apart. The first gas ejection surface 121S and the second gas ejection surface 122S are each flat. The film transport section 120 is configured to pass the film 1 between the spaced-apart first gas ejection surface 121S and second gas ejection surface 122S.

[0035] The first electrode 111 and the second electrode 112 are disposed to face each other with the first gas ejection section 121 and the second gas ejection section 122 interposed therebetween. As described above, the film transport section 120 is configured to pass the film 1 between the first gas ejection section 121 and the second gas ejection section 122. Therefore, the film transport section 120 can pass the film 1 between the first electrode 111 and the second electrode 112. The first electrode 111 is covered by the first gas ejection section 121, which is a dielectric. In this embodiment, the first electrode 111 is embedded in the first gas ejection section 121. However, in another embodiment, the first electrode 111 may not be covered by the first gas ejection section 121 on the side opposite to the side facing the second electrode 112. The second electrode 112 is covered by the second gas ejection section 122, which is a dielectric. In this embodiment, the second electrode 112 is embedded in the second gas outlet 122, but the second electrode 112 does not have to be covered by the second gas outlet 122 on the side opposite to the side facing the first electrode 111.

[0036] A first gas ejection part 121, which is a dielectric, and a second gas ejection part 122, which is a dielectric, are present between the first electrode 111 and the second electrode 112. Because the first electrode 111 and the second electrode 112 are covered with the first gas ejection part 121 and the second gas ejection part 122, which are dielectrics, respectively, it is possible to effectively generate a nearly uniform discharge between the first electrode 111 and the second electrode 112, thereby reducing unevenness in the processing of the film 1. Because both the first electrode 111 and the second electrode 112 are covered with a dielectric, it is possible to reduce differences in discharge processing conditions between the front and back surfaces of the film 1.

[0037] In another embodiment, only one of the first electrode 111 and the second electrode 112 may be covered by the dielectric first gas ejection part 121 or the second gas ejection part 122. In this case as well, a nearly uniform discharge can be generated between the first electrode 111 and the second electrode 112.

[0038] The shape of the electrodes is not particularly limited. An appropriate electrode shape can be used depending on the type of discharge treatment desired. This also applies to other embodiments described below. The shapes of the first electrode 111 and the second electrode 112 may be the same or different. For example, rod-shaped electrodes can be used as the first electrode 111 or the second electrode 112, arranged so that their longitudinal direction is approximately parallel, preferably parallel, to the width direction of the film 1 being transported. This improves the transportability of the film 1 and reduces shrinkage of the film 1 due to the discharge treatment. Alternatively, rod-shaped electrodes can be arranged so that their longitudinal direction is oblique to the width direction of the film 1 being transported. Here, "oblique" means a direction that is neither perpendicular nor parallel to the width direction of the film 1 being transported. By arranging rod-shaped electrodes obliquely to the width direction of the film 1 being transported, the portion of the film discharge treatment device that comes into contact with the discharge portion is longer than when the rod-shaped electrodes are arranged parallel to the width direction, even with the same discharge output. This increases the heat capacity of the portion, and allows the temperature of the film discharge treatment device to be kept low. This minimizes the need for cooling equipment. For example, rod-shaped electrodes can be used, arranged so that their longitudinal direction forms an angle of, for example, 30° or less, for example, 10° or less, or for example, 5° or less with respect to the width direction of the film 1 being transported. When the first electrode 111 and / or the second electrode 112 are rod-shaped, the length of the rod-shaped electrodes may be greater than, equal to, or less than the width of the film 1 being transported. By making the length of the electrodes equal to or greater than the width of the film 1 being transported, the entire film 1, including its widthwise ends, can be discharge-treated. By making the length of the electrodes less than the width of the film 1 being transported, portions that are not normally discharge-treated can be formed at the widthwise ends of the discharge-treated film 1. Therefore, when unevenness (knurls) is formed at the widthwise ends of the discharge-treated film 1 and the film 1 is wound, blocking of the film 1 can be effectively reduced. When the electrodes are rod-shaped, the cross-sectional shape perpendicular to the longitudinal direction is not particularly limited, and examples include circular, triangular, rectangular, pentagonal, and rectangular shapes with one side formed in an arc.Examples of specific electrode shapes include a comb shape, a wire rope shape, and a braided cord shape.

[0039] For example, when atmospheric pressure plasma treatment is performed as a discharge treatment, examples of combinations of the first electrode 111 and the second electrode 112 include a combination of a flat electrode with a flat electrode, a combination of a flat electrode with a cylindrical electrode, a combination of a flat electrode with a spherical electrode, a combination of a flat electrode with a plurality of needle-shaped electrodes, and a combination of a plurality of needle-shaped electrodes with a plurality of needle-shaped electrodes.

[0040] The exhaust device 140 is configured to exhaust the gas ejected from the first gas ejection part 121 and the second gas ejection part 122. The exhaust device 140 is provided with an intake port 141, which is provided in a manner that contacts the periphery of the first gas ejection part 121 and the second gas ejection part 122 or the main body of the first gas ejection part 121 and the second gas ejection part 122, and the exhaust device 140 sucks in the gas from the intake port 141. When the first gas ejection section 121 and the second gas ejection section 122 are each connected to the intake port of the exhaust device 140, the portions of the first gas ejection section 121 and the second gas ejection section 122 to which the intake port of the exhaust device 140 is connected can be intermediate portions in the film conveyance direction (MD direction) of the first gas ejection section 121 and the second gas ejection section 122. When the intake port of the exhaust device 140 is connected to the intermediate portions of the first gas ejection section 121 and the second gas ejection section 122, oxidizing gases such as NOx gas and ozone gas that may be generated by the discharge treatment can be efficiently exhausted. The exhaust device 140 allows the gases ejected from the first gas ejection section 121 and the second gas ejection section 122, and the gases ionized by discharge in the discharge section 110 after being ejected, to be exhausted to the outside of the film discharge treatment device 100, thereby making it possible to more stabilize the transport position of the film 1 and to reduce unevenness in the discharge treatment of the film 1. In addition, the exhaust device 140 may be connected to an exhaust treatment device that treats an atmosphere containing radicals generated by a discharge treatment such as plasma treatment. The provision of the exhaust treatment device reduces the environmental load caused by an atmosphere containing radicals that is exhausted from within the discharge treatment device.

[0041] In addition to the above-described components, the film discharge processing device 100 may include optional elements. Examples of optional elements include a power source, a knurling device that imparts unevenness (knurls) to both widthwise ends of the film 1, a film winding machine, a laminating device, a window for visually observing the discharge processing status, and a measuring device such as an optical instrument. Film discharge processing devices according to other embodiments described below may also include these optional elements.

[0042] The film discharge processing apparatus 100 having the above configuration can achieve discharge processing on both sides of the film 1 with a single discharge section 110, so that the film discharge processing apparatus can be made compact.

[0043] The film discharge processing device 100 is used, for example, as follows: The film 1 is passed by the film transport section 120 between the first gas ejection surface 121S of the first gas ejection section 121 and the second gas ejection surface 122S of the second gas ejection section 122, and is transported downstream in the transport direction MD without contacting the first gas ejection surface 121S or the second gas ejection surface 122S due to the action of gas ejected from the first gas ejection surface 121S and the second gas ejection surface 122S. The discharge section 110 applies a voltage between the first electrode 111 and the second electrode 112, thereby generating a discharge between the first electrode 111 and the second electrode 112, i.e., between the first gas ejection surface 121S and the second gas ejection surface 122S. The film 1 is transported downstream in a non-contact state between the first gas ejection surface 121S and the second gas ejection surface 122S, and both sides are treated by discharge between the first gas ejection surface 121S and the second gas ejection surface 122S.

[0044] 2.2. Second Embodiment A film discharge processing device according to a second embodiment will now be described with reference to the drawings. FIG. 2 is a schematic diagram illustrating a film discharge processing device according to the second embodiment. The film discharge processing device 200 includes a discharge unit 210, film transport units 220a and 220b, a pressurized air device 130, an exhaust unit 140, and a case 150. The film transport units 220a and 220b and the discharge unit 210 are adjacent to each other along the transport direction MD of the film 1. The discharge unit 210 is located between the film transport units 220a and 220b. The discharge unit 210 includes a first electrode 211 and a second electrode 212. The film transport unit 220a includes a first gas ejection unit 221a and a second gas ejection unit 222a. The first gas ejection unit 221a includes a first gas ejection surface 221aS. The second gas ejection section 222a has a second gas ejection surface 222aS. The film transport section 220b has a first gas ejection section 221b and a second gas ejection section 222b. The first gas ejection section 221b has a first gas ejection surface 221bS. The second gas ejection section 222b has a second gas ejection surface 222bS. The first gas ejection sections 221a, 221b and the second gas ejection sections 222a, 222b are each formed of a porous material. An air compression device 130 is connected to each of the first gas ejection sections 221a, 221b and the second gas ejection sections 222a, 222b.

[0045] The first gas ejection part 221a is configured to eject gas from a first gas ejection surface 221aS, and the second gas ejection part 222a is configured to eject gas from a second gas ejection surface 222aS. Similarly, the first gas ejection part 221b is configured to eject gas from a first gas ejection surface 221bS, and the second gas ejection part 222b is configured to eject gas from a second gas ejection surface 222bS.

[0046] The first gas ejection surface 221aS and the second gas ejection surface 222aS are opposed to and spaced apart from each other. Similarly, the first gas ejection surface 221bS and the second gas ejection surface 222bS are opposed to and spaced apart from each other. The first gas ejection surfaces 221aS, 221bS and the second gas ejection surfaces 222aS, 222bS are each flat. The film transport sections 220a, 220b are configured to pass the film 1 between the spaced-apart first gas ejection surface 221aS and the second gas ejection surface 222aS, and between the spaced-apart first gas ejection surface 221bS and the second gas ejection surface 222bS.

[0047] In another embodiment, the first gas ejection surfaces 221aS, 221bS and the second gas ejection surfaces 222aS, 222bS may each be a curved surface. For example, at least one of the first gas ejection portion 221a and the second gas ejection portion 222a, and the first gas ejection portion 221b and the second gas ejection portion 222b may be the first gas ejection portion 321 and the second gas ejection portion 322 in a third embodiment described below, or the first gas ejection portion 421 and the second gas ejection portion 422 in a fourth embodiment described below.

[0048] Film conveying sections 220a and 220b are provided adjacent to the discharge section 210, and the film 1 conveyed by the film conveying sections 220a and 220b is passed between the first electrode 211 and the second electrode 222 provided in the discharge section 210 and conveyed.

[0049] The first electrode 211 and the second electrode 212 included in the discharge unit 210 are arranged to face each other with a first dielectric portion 213 and a second dielectric portion 214 interposed therebetween. The first electrode 211 is covered by the first dielectric portion 213 on the side facing the second electrode 212. The second electrode 212 is covered by the second dielectric portion 214 on the side facing the first electrode 211. The first dielectric portion 213 and the second dielectric portion 214 are formed of a dielectric. A surface 213S of the first dielectric portion 213 and a surface 214S of the second dielectric portion 214 face each other and are spaced apart from each other.

[0050] In another embodiment, only one of the first electrode 211 and the second electrode 212 may be covered by the first dielectric portion 213 or the second dielectric portion 214 .

[0051] When at least one of the first electrode 211 and the second electrode 212 is covered with a dielectric portion formed by a dielectric material and the first electrode 211 and the second electrode 212 are arranged to face each other via the first dielectric portion 213 and / or the second dielectric portion 214, a nearly uniform discharge can be generated between the first electrode 211 and the second electrode 212, thereby reducing unevenness in the treatment of the film 1. Furthermore, by providing both the first dielectric portion 213 and the second dielectric portion 214, a discharge that is even more uniform can be generated and differences in discharge treatment conditions between the front and back surfaces of the film 1 can be reduced.

[0052] The film discharge processing device 200 having the above configuration can achieve discharge processing on both sides of the film 1 with a single discharge section 210, so that the film discharge processing device can be made compact.

[0053] The film discharge treatment device 200 is used, for example, as follows: The film 1 is passed by the film transport section 220a between the first gas ejection surface 221aS and the second gas ejection surface 222aS, and is transported, without contacting the first gas ejection surface 221aS or the second gas ejection surface 222aS, to the discharge section 210, which is provided adjacent to the film transport section 220a and downstream in the transport direction MD of the film 1. Furthermore, as will be described later, the film 1, both sides of which have been discharge-treated by the discharge section 210, is transported to the film transport section 220b, which is provided adjacent to the discharge section 210 and downstream in the transport direction MD of the film 1. The film 1 is passed between the first gas ejection surface 221bS and the second gas ejection surface 222bS by the film conveying section 220b, and is conveyed further downstream in the conveying direction MD of the film conveying section 220b without contacting the first gas ejection surface 221bS and the second gas ejection surface 222bS.

[0054] In discharge unit 210, a voltage is applied between first electrode 211 and second electrode 212, thereby generating a discharge between first electrode 211 and second electrode 212, specifically between surface 213S of first dielectric portion 213 and surface 214S of second dielectric portion 214. Film 1 is transported by film transport units 220a and 220b and passed between first electrode 211 and second electrode 212, specifically between surface 213S of first dielectric portion 213 and surface 214S of second dielectric portion 214. Since surfaces 213S and 214S face each other and are spaced apart as described above, film 1 is transported by film transport units 220a and 220b without contacting surfaces 213S and 214S, and both surfaces are processed by the discharge between surfaces 213S and 214S.

[0055] 2.3. Third embodiment A film discharge processing device according to a third embodiment will now be described with reference to the drawings. Fig. 3 is a schematic diagram showing a film discharge processing device according to the third embodiment. Fig. 4 is a perspective view showing a first gas ejection section according to the third embodiment. Fig. 5 is a perspective view showing a second gas ejection section according to the third embodiment.

[0056] The film discharge processing device 300 includes a discharge unit 310, a film transport unit 320, an air compression device 130, an exhaust device 140, and a case 150. The discharge unit 310 includes a first electrode 311 and a second electrode 312. The film transport unit 320 includes a first gas ejection unit 321 and a second gas ejection unit 322. The first gas ejection unit 321 and the second gas ejection unit 322 include a first gas ejection surface 321S and a second gas ejection surface 322S, respectively. The first gas ejection unit 321 and the second gas ejection unit 322 are each formed of a porous material. The air compression device 130 is connected to each of the first gas ejection unit 321 and the second gas ejection unit 322.

[0057] As in the first embodiment, the porous material forming the first gas ejection part 321 and the second gas ejection part 322 is a dielectric material.

[0058] The first gas ejection part 321 is configured to eject gas from a first gas ejection surface 321S, and the second gas ejection part 322 is configured to eject gas from a second gas ejection surface 322S. The first gas ejection surface 321S and the second gas ejection surface 322S are opposed to and spaced apart from each other.

[0059] The first gas ejection part 321 has a convex part 321T. The surface of the convex part 321T is a curved surface, and the surface of the convex part 321T is the first gas ejection surface 321S. The second gas ejection part 322 has a concave part 322O. The surface of the concave part 322O is a curved surface, and the surface of the concave part 322O is the second gas ejection surface 322S.

[0060] 4 and 5, the convex portions 321T and the concave portions 322O each extend in a normal direction D of a plane P (the plane of the paper in FIG. 3, which is typically a plane perpendicular to the width direction of the film 1) that includes the conveying direction MD of the film 1. The normal direction D is typically parallel to the width direction of the film 1. Also, as shown in FIG. 3, the first gas ejection portion 321 and the second gas ejection portion 322 are arranged so that the surface of the convex portion 321T (first gas ejection surface 321S) is aligned with the surface of the concave portion 322O (second gas ejection surface 322S).

[0061] In another embodiment, the convex portions and the concave portions may each extend in a direction that forms an angle of, for example, 30° or less, for example, an angle of 10° or less, or for example, an angle of 5° or less with respect to the normal direction D. Since the convex portions and the concave portions are not in contact with the film 1, even if the convex portions and the concave portions each extend in a direction that forms an oblique angle with respect to the normal direction D, there is little possibility that the film 1 will be scratched.

[0062] The film transport section 320 is configured to pass the film 1 between the first gas ejection surface 321S and the second gas ejection surface 322S. The film 1 passing between the first gas ejection surface 321S and the second gas ejection surface 322S is transported downstream in the transport direction MD without coming into contact with the first gas ejection surface 321S and the second gas ejection surface 322S due to the action of the gas ejected from the first gas ejection surface 321S and the second gas ejection surface 322S. As described above, the convex portions 321T and the concave portions 322O each extend in the normal direction D. Therefore, the film 1 transported downstream without contacting the first gas ejection surface 321S, which is the surface of the convex portions 321T, and the second gas ejection surface 322S, which is the surface of the concave portions 322O, is curved along the first gas ejection surface 321S and the second gas ejection surface 322S, and has an arc shape in a cross section taken along a plane including the transport direction MD of the film 1. By transporting the film 1 while curving in this way, the rigidity of the film 1 is increased, and the occurrence of sagging and wrinkles in the film 1 during transport is reduced, allowing the film 1 to travel stably between the first gas ejection surface 321S and the second gas ejection surface 322S. As a result, the discharge treatment of the film 1 can be performed under stable conditions.

[0063] The first electrode 311 and the second electrode 312 are disposed to face each other across the first gas ejection part 321 and the second gas ejection part 322. The first electrode 311 is embedded in the top of the protrusion 321T. The second electrode 312 is embedded in the bottom of the recess 322O.

[0064] Except that the first electrode 311 is covered by a first gas outlet 321 and the second electrode 312 is covered by a second gas outlet 322, the first electrode 311 and the second electrode 312 have the same configuration as the first electrode 111 and the second electrode 112, respectively.

[0065] The first electrode 311 and the second electrode 312 are covered by the first gas ejection part 321 and the second gas ejection part 322, which are dielectrics, respectively, so that a nearly uniform discharge can be effectively generated between the first electrode 311 and the second electrode 312, thereby reducing unevenness in the treatment of the film 1. The first electrode 311 and the second electrode 312 are both covered by the dielectric, so that differences in discharge treatment conditions can be reduced between the front and back surfaces of the film 1.

[0066] In another embodiment, only one of the first electrode 311 and the second electrode 312 may be covered by the dielectric first gas ejection part 321 or the second gas ejection part 322. In this case as well, a nearly uniform discharge can be generated between the first electrode 311 and the second electrode 312.

[0067] The film discharge processing apparatus 300 having the above configuration can achieve discharge processing on both sides of the film 1 using a single discharge section 310, so that the film discharge processing apparatus can be made compact.

[0068] The film discharge processing device 300 is used in the same manner as the film discharge processing device 100, for example, by using a film transport unit 320 instead of the film transport unit 120 and a discharge unit 310 instead of the discharge unit 110. The film 1 is passed between the first gas ejection surface 321S and the second gas ejection surface 322S and transported downstream in the transport direction MD without contacting the first gas ejection surface 321S or the second gas ejection surface 322S. The discharge unit 310 generates a discharge between the first electrode 311 and the second electrode 312, and both sides of the film 1 are processed.

[0069] 2.4. Fourth Embodiment A film discharge processing device according to a fourth embodiment will now be described with reference to the drawings. Fig. 6 is a schematic diagram showing a film discharge processing device according to the fourth embodiment. Fig. 7 is a perspective view showing a first gas ejection section according to the fourth embodiment. Fig. 8 is a perspective view showing a second gas ejection section according to the fourth embodiment.

[0070] The film discharge processing device 400 includes discharge units 410 a , 410 b , and 410 c , a film transport unit 420 , an air pressurization device 130 , an exhaust device 140 , and a case 150 .

[0071] The discharge unit 410a includes a first electrode 411a and a second electrode 412a. The discharge unit 410b includes a first electrode 411b and a second electrode 412b. The discharge unit 410c includes a first electrode 411c and a second electrode 412c. The film transport unit 420 includes a first gas ejection unit 421 and a second gas ejection unit 422. The first gas ejection unit 421 and the second gas ejection unit 422 include a first gas ejection surface 421S and a second gas ejection surface 422S, respectively. The first gas ejection unit 421 and the second gas ejection unit 422 are each formed of a porous material. An air compression device 130 is connected to each of the first gas ejection unit 421 and the second gas ejection unit 422.

[0072] As in the first embodiment, the porous material forming the first gas ejection part 421 and the second gas ejection part 422 is a dielectric material.

[0073] The first gas ejection part 421 is configured to eject gas from a first gas ejection surface 421S, and the second gas ejection part 422 is configured to eject gas from a second gas ejection surface 422S. The first gas ejection surface 421S and the second gas ejection surface 422S are opposed to and spaced apart from each other.

[0074] The first gas ejection part 421 has a plurality of convex parts 421T, 421T. The surfaces of the convex parts 421T, 421T are continuously curved surfaces, and the surfaces of the convex parts 421T, 421T are the first gas ejection surface 421S. The second gas ejection part 422 has a plurality of concave parts 422O, 422O. The surfaces of the concave parts 422O, 422O are continuously curved surfaces, and the surfaces of the concave parts 422O, 422O are the second gas ejection surface 422S.

[0075] As shown in Fig. 7, each of the multiple convex portions 421T, 421T extends in a normal direction D of a plane P (the plane of the paper in Fig. 6, which is typically a plane perpendicular to the width direction of the film 1) that includes the machine direction MD of the film 1. The normal direction D is typically parallel to the width direction of the film 1. As shown in Fig. 8, the multiple concave portions 422O, 422O also extend in the normal direction D of the plane P that includes the machine direction MD of the film 1.

[0076] The first gas ejection part 421 and the second gas ejection part 422 are arranged so that the surfaces of the convex parts 421T, 421T (first gas ejection surfaces 421S) are aligned with the surfaces of the concave parts 422O, 422O (second gas ejection surfaces 422S). The first gas ejection surfaces 421S, which are the surfaces of the plurality of convex parts 421T, 421T, and the second gas ejection surfaces 422S, which are the surfaces of the plurality of concave parts 422O, 422O, are each wavy.

[0077] The film transport section 420 is configured to pass the film 1 between the wavy first gas ejection surface 421S and the wavy second gas ejection surface 422S.

[0078] The film 1 passing between the first gas ejection surface 421S and the second gas ejection surface 422S is transported downstream without coming into contact with the first gas ejection surface 421S and the second gas ejection surface 422S due to the action of the gas ejected from the first gas ejection surface 421S and the second gas ejection surface 422S. As described above, the multiple convex portions 421T, 421T and the multiple concave portions 422O, 422O each extend in the normal direction D, so the film 1 transported downstream without coming into contact with the first gas ejection surface 421S and the second gas ejection surface 422S curves multiple times along the first gas ejection surface 421S and the second gas ejection surface 422S, and becomes wavy in a cross section taken along a plane including the conveying direction MD of the film 1. In this way, the film 1 is conveyed while being curved multiple times, which increases the rigidity of the film 1 and further reduces the occurrence of sagging and wrinkles in the film 1 during conveyance, allowing the film 1 to travel stably between the first gas ejection surface 421S and the second gas ejection surface 422S. As a result, the discharge treatment of the film 1 can be carried out under stable conditions.

[0079] The first electrode 411a and the second electrode 412a are arranged to face each other across the first gas ejection portion 421 and the second gas ejection portion 422. Similarly, the first electrode 411b and the second electrode 412b are arranged to face each other across the first gas ejection portion 421 and the second gas ejection portion 422. Furthermore, the first electrode 411c and the second electrode 412c are arranged to face each other across the first gas ejection portion 421 and the second gas ejection portion 422. The first electrode 411a and the first electrode 411c are embedded in the tops of the plurality of convex portions 421T, 421T, respectively. The second electrode 412a and the second electrode 412c are embedded in the bottoms of the plurality of concave portions 422O, 422O, respectively. The first electrode 411b is embedded in the boundaries between the plurality of convex portions 421T and the convex portions 421T. The second electrode 412b is embedded in the plurality of recesses 422O and in the boundaries between the recesses 422O.

[0080] Except that the first electrodes 411a, 411b, 411c are covered by a first gas outlet 421 and the second electrodes 412a, 412b, 412c are covered by a second gas outlet 422, the first electrodes 411a, 411b, 411c and the second electrodes 412a, 412b, 412c have the same configuration as the first electrode 111 and the second electrode 112, respectively.

[0081] The first electrodes 411a, 411b, 411c and the second electrodes 412a, 412b, 412c are covered with the first gas ejection part 421 or the second gas ejection part 422, which is a dielectric, so that nearly uniform discharge can be effectively generated between the first electrode 411a and the second electrode 412a, between the first electrode 411b and the second electrode 412b, and between the first electrode 411c and the second electrode 412c, thereby reducing unevenness in the treatment of the film 1. The dielectric covering of both the first electrode 411a and the second electrode 412a, both the first electrode 411b and the second electrode 412b, and both the first electrode 411c and the second electrode 412c reduces differences in discharge treatment conditions between the front and back surfaces of the film 1.

[0082] In another embodiment, only one of the first electrode 411 a and the second electrode 412 a, one of the first electrode 411 b and the second electrode 412 b, or one of the first electrode 411 c and the second electrode 412 c may be covered by the dielectric first gas ejection part 421 or the second gas ejection part 422. In this case as well, a nearly uniform discharge can be generated between the first electrode and the second electrode.

[0083] In another embodiment, the film discharge processing device 400 may be a film discharge processing device in which some (for example, one or two) of the discharge section 410a, the discharge section 410b, and the discharge section 410c are provided.

[0084] In another embodiment, the film discharge processing device may have three or more of the plurality of convex portions and three or more of the plurality of convex portions.

[0085] The film discharge processing device 400 is used in the same manner as the film discharge processing device 100, for example, by using a film transport unit 420 instead of the film transport unit 120 and discharge units 410a, 410b, and 410c instead of the discharge unit 110. The film 1 is passed between the first gas ejection surface 421S and the second gas ejection surface 422S and transported downstream without contacting the first gas ejection surface 421S or the second gas ejection surface 422S. The discharge units 410a, 410b, and 410c generate discharges between the first electrode 411a and the second electrode 412a, between the first electrode 411b and the second electrode 412b, and between the first electrode 411c and the second electrode 412c, respectively, and both sides of the transported film 1 are processed in turn by the discharge units 410a, 410b, and 410c.

[0086] 2.5 Fifth Embodiment A film discharge processing device according to a fifth embodiment will now be described with reference to the drawings. Fig. 9 is a schematic diagram showing a film discharge processing device according to the fifth embodiment.

[0087] Film discharge processing device 500 includes a discharge unit 510, a film transport unit 520, an air pressurization device 130, an exhaust device 140, and a case 150. Discharge unit 510 includes a first electrode 111 and a second electrode 112. Film transport unit 520 includes a first gas ejection unit 121. First gas ejection unit 121 includes a first gas ejection surface 121S. First gas ejection unit 121 included in film discharge processing device 500 may be disposed vertically below the surface of film 1 being transported, or may be disposed vertically above the surface of film 1 being transported. First gas ejection unit 121 included in film discharge processing device 500 may have a configuration similar to that of first gas ejection unit 121 included in film discharge processing device 100 described above.

[0088] The first electrode 111 is covered with a first gas ejection part 121. The first electrode 111 may have the same configuration as the first electrode provided in the film discharge processing device 100 described above.

[0089] The second electrode 112 is covered with a dielectric portion 113 on the side facing the first electrode 111. The dielectric portion 113 is formed of a dielectric. In another embodiment, the second electrode 112 may not be covered with the dielectric portion 113.

[0090] The discharge unit 510 and the film transport unit 520 are housed in a case 150. The case 150 is connected to an intake port 141 of an exhaust device 140.

[0091] In this embodiment, when gas is pressure-fed to the first gas ejection part 121 from the compressed air device 130 connected to the first gas ejection part 121, the gas is ejected from the multiple holes in the first gas ejection surface 121S. As a result, the film 1 is transported downstream in the conveying direction MD without contacting the first gas ejection surface 121S. The discharge part 510 can discharge both sides of the film 1 that is transported without contacting the first gas ejection surface 121S.

[0092] 3. Method for Producing Discharge-Treated Film 3.1. Overview of the Method for Producing Discharge-Treated Film The method for producing a discharge-treated film according to one embodiment of the present invention is generally carried out using a film discharge treatment device including the discharge section and film transport section. As the film discharge treatment device, for example, any of the first to fifth embodiments described above may be used.

[0093] The method for manufacturing a discharge-treated film according to this embodiment includes the steps of: (1) in which the film transport unit passes a film between the first electrode and the second electrode, and ejects gas from the first gas ejection surface, transporting the film without contacting the first gas ejection surface; and (2) in which the discharge unit generates a discharge between the first electrode and the second electrode, and discharges both sides of the film that is passed between the first electrode and the second electrode, thereby obtaining a discharge-treated film.

[0094] The method for producing a discharge-treated film may include optional steps in addition to the steps (1) and (2). Examples of optional steps include a knurling step of providing knurls to both widthwise ends of the discharge-treated film, a winding step of the discharge-treated film, a laminating step, a step of observing the discharge-treated film, and a step of performing various measurements. Steps (1) and (2) may be performed simultaneously. Step (1) may be repeated multiple times, and / or step (2) may be repeated multiple times. For example, steps (1), (2), and (1) may be performed in this order.

[0095] In a preferred embodiment of the method for producing a discharge-treated film of the present invention, step (1) includes ejecting gas from the first gas-ejection surface and the second gas-ejection surface, passing the film between the first gas-ejection surface and the second gas-ejection surface, and transporting the film in a non-contact state with the first gas-ejection surface and the second gas-ejection surface. Hereinafter, an example of a method for producing a discharge-treated film according to a preferred embodiment of the present invention will be given using the film discharge treatment device 100 according to the first embodiment, but the method for producing a discharge-treated film of the present invention is not limited to the example method.

[0096] 3.2. Film to be Discharge Treated The film to be discharge treated (hereinafter, the film to be discharge treated will also be simply referred to as the target film) is preferably a resin film containing a resin. Examples of the resin contained in the resin film include styrene resin; acrylic resin; methacrylic resin; halogen-containing resin; olefin resin such as polyethylene or polypropylene; resin having an alicyclic structure; polycarbonate resin; polyester resin such as polyethylene terephthalate or polyethylene naphthalate; polyamide resin; thermoplastic polyurethane resin; polysulfone resin such as polyethersulfone or polysulfone; polyphenylene ether resin such as a polymer of 2,6-xylenol; cellulose derivatives such as cellulose esters, cellulose carbomers, and cellulose ethers; and silicone resin such as polydimethylsiloxane or polymethylphenylsiloxane.

[0097] Since the target film can be continuously discharged, the target film is preferably long.

[0098] <3.3. Step (1)> In step (1), the film transport unit 120 passes the target film between the first electrode 111 and the second electrode 112, and ejects gas from the first gas ejection surface 121S and the second gas ejection surface 122S, passing the target film between the first gas ejection surface 121S and the second gas ejection surface 122S, and transporting the target film in a state of non-contact with the first gas ejection surface 121S and the second gas ejection surface 122S.

[0099] <3.4. Step (2)> In step (2), the discharge unit 110 generates a discharge between the first electrode 111 and the second electrode 112, and discharges both surfaces of the target film that is passed between the first electrode 111 and the second electrode 112, thereby obtaining a discharge-treated film.

[0100] The type of discharge treatment is not particularly limited and may be, for example, atmospheric pressure plasma discharge treatment or atmospheric pressure glow discharge treatment (e.g., helium atmospheric pressure glow discharge treatment or argon atmospheric pressure glow discharge treatment), with atmospheric pressure plasma discharge treatment being preferred. Examples of atmospheric pressure plasma discharge treatment include corona discharge treatment and dielectric barrier discharge treatment, with dielectric barrier discharge treatment being preferred from the viewpoints of suppressing Joule heat generation due to the relatively small current between the electrodes and protecting the film. For the discharge treatment, treatment conditions such as the distance between the first electrode 111 and the second electrode 112, the magnitude of the voltage applied between the first electrode 111 and the second electrode 112, and the respective shapes of the first electrode 111 and the second electrode 112 can be set as desired, depending on the type of discharge treatment desired.

[0101] According to the method for manufacturing discharge-treated film of this embodiment, the target film is transported without contact with the film transport section, so even if the dimensions of the target film fluctuate due to factors such as fluctuations in the conditions when manufacturing the target film or heat applied to the target film when discharge-treating it, scratches are less likely to occur on the discharge-treated film.

[0102] Furthermore, since discharge treatment is performed simultaneously on both sides of the target film, both sides of the target film can be stably discharged.

[0103] Furthermore, since the target film can be transported without contact with the film transport unit, the target film can be discharged while being transported under low tension, thereby reducing deformation of the target film due to tension during the discharge treatment.

[0104] Furthermore, since the discharge-treated film is transported in a non-contact state to the film transport section, the discharge-treated film can be transported to the step following the discharge treatment step while the polar groups remain on the surface of the discharge-treated film for a long time, thereby maintaining or improving the performance of the film. For example, if the next step is a coating step, the polar groups remaining on the surface of the discharge-treated film can increase the adhesion between the discharge-treated film and the coating layer.

[0105] Furthermore, according to the method for manufacturing discharge-treated film of this embodiment, it is not necessary to transport the target film using a transport member that comes into contact with the target film, such as a transport roller, so there is no need to remove discharge-treated products such as oxalic acid that adhere to the transport member.

[0106] 3.5. Discharge-Treated Film The discharge-treated film obtainable by the manufacturing method including steps (1) and (2) has improved surface properties due to the discharge treatment of both surfaces of the target film. Examples of surface properties include hydrophilicity (e.g., water contact angle) and easy adhesion, depending on the type of discharge treatment. Hydrophilicity can be exhibited by the chemical anchoring effect and physical anchoring effect on the discharge-treated film surface. Easy adhesion can be exhibited by the chemical bonding force and intermolecular force due to the formation of polar groups on the film surface by the discharge treatment. These surface properties enable the discharge-treated film to be laminated with other layers with good adhesion. Furthermore, the discharge-treated film obtainable by the manufacturing method described above has reduced scratches due to contact with the film transport section because the discharge section discharges the target film, which is not in contact with the film transport section.

[0107] REFERENCE SIGNS LIST 1 Film 100 Film discharge processing device 110 Discharge section 111 First electrode 112 Second electrode 120 Film transport section 121 First gas ejection section 121S First gas ejection surface 122 Second gas ejection section 122S Second gas ejection surface 130 Compressed air device 140 Exhaust device 141 Air intake 150 Case 200 Film discharge processing device 210 Discharge section 211 First electrode 212 Second electrode 220a, 220b Film transport section 221a, 221b First gas ejection section 221aS, 221bS First gas ejection surface 222a, 222b Second gas ejection section 222aS, 222bS Second gas ejection surface 300 Film discharge processing device 310 Discharge section 311 First electrode 312 Second electrode 320 Film transport section 321 First gas ejection section 321S First gas ejection surface 321T Convex section 322 Second gas ejection section 322S Second gas ejection surface 322O Concave section 400 Film discharge processing device 410a, 410b, 410c Discharge section 411a, 411b, 411c First electrode 412a, 412b, 412c Second electrode 420 Film transport section 421 First gas ejection section 421S First gas ejection surface 421T Convex section 422 Second gas ejection section 422S Second gas ejection surface 422O Concave section 500 Film discharge treatment device 510 Discharge section 520 Film transport section 113 Dielectric section

Claims

1. A film discharge treatment device comprising: a discharge section including a first electrode and a second electrode; and a film transport section configured to pass a film between the first electrode and the second electrode, wherein the film transport section includes a first gas ejection surface, and a first gas ejection section formed of a porous material and configured to eject gas from the first gas ejection surface.

2. A film discharge processing device as described in claim 1, wherein the film transport section further includes a second gas ejection section including a second gas ejection surface, formed of a porous material and configured to eject gas from the second gas ejection surface, the first gas ejection surface and the second gas ejection surface are opposed to and spaced apart from each other, and the film transport section is configured to pass the film between the first gas ejection surface and the second gas ejection surface.

3. A film discharge processing apparatus according to claim 1 or 2, wherein the porous material is a dielectric material.

4. A film discharge processing device as described in claim 2, wherein the porous material is a dielectric, and the first electrode and the second electrode are each covered by the first gas ejection portion or the second gas ejection portion.

5. A film discharge processing device as described in claim 2, wherein the first gas ejection portion includes a convex portion having a curved surface which is the first gas ejection surface and extends in a normal direction D of a plane including the transport direction of the film, and the second gas ejection portion includes a concave portion having a curved surface which is the second gas ejection surface and extends in the normal direction D.

6. A film discharge processing apparatus according to claim 5, wherein said first gas ejection section includes a plurality of said protrusions, and said second gas ejection section includes a plurality of said recesses.

7. The film discharge processor according to claim 1 or 2, wherein the porous material is ceramic.

8. The film discharge treatment device according to claim 1 or 2, wherein the porous material is a ceramic containing barium titanate.

9. A film discharge processing apparatus according to claim 1 or 2, wherein the film transport section and the discharge section are provided adjacent to each other along the film transport direction.

10. A film discharge processing apparatus according to claim 1 or 2, wherein said gas ejection surface is flat.

11. A film discharge processing device as described in claim 1 or 2, wherein the film transport section includes an air pressure device connected to the gas outlet section, and the air pressure device is configured to pump and deliver gas containing 99 volume % or more of nitrogen gas.

12. The film discharge treatment device according to claim 1 or 2, wherein the film is a resin film.

13. The film discharge processing apparatus according to claim 1 or 2, further comprising an exhaust device configured to exhaust the gas ejected from the gas ejection section.

14. A method for producing a discharge-treated film using the film discharge treatment device described in claim 1, comprising: a step in which the film transport unit passes the film between the first electrode and the second electrode, and ejects gas from the first gas ejection surface, transporting the film without contacting the first gas ejection surface; and a step in which the discharge unit generates a discharge between the first electrode and the second electrode, and performs a discharge treatment on both sides of the film passed between the first electrode and the second electrode, thereby obtaining a discharge-treated film.

15. A method for producing a discharge-treated film using the film discharge treatment device described in claim 2, comprising the steps of: the film transport unit passing the film between the first electrode and the second electrode, and ejecting gas from the first gas ejection surface and the second gas ejection surface, passing the film between the first gas ejection surface and the second gas ejection surface, and transporting the film in a non-contact state with the first gas ejection surface and the second gas ejection surface; and the discharge unit generating a discharge between the first electrode and the second electrode, and performing a discharge treatment on both sides of the film passed between the first electrode and the second electrode, thereby obtaining a discharge-treated film.

Citation Information

Patent Citations

  • Discharge treatment apparatus and discharge treatment method

    JP2001269569A

  • Transparent conductive film, method for forming the same and article including the same

    JP2003308741A

  • Porous electrode for plasma discharge, treatment device for atmospheric plasma discharge, thin film forming method and highly functional film

    JP2003334436A

  • Surface treatment apparatus

    WO1996031997A1

  • Boundary layer disruptive preconditioning in atmospheric-plasma process

    WO2010030613A1