Semiconductor device

Abstract

The present invention provides a semiconductor device capable of improving characteristics. According to an embodiment, this semiconductor device includes first to third electrodes, first to fourth semiconductor members, and a first insulating member. The first semiconductor member is provided between the first electrode and the second electrode, and is a first conductivity type. The first semiconductor member includes a fifth partial region. The second semiconductor member is a second conductivity type. The second semiconductor member includes a first semiconductor region and a second semiconductor region. The fifth partial region is between the first semiconductor region and the second semiconductor region in a third direction. The third semiconductor member is the second conductivity type. The fourth semiconductor member is the first conductivity type.

Description

Semiconductor Devices

[0001] FIELD An embodiment of the present invention relates to a semiconductor device.

[0002] For example, in semiconductor devices including Schottky barrier diodes, improvements in characteristics are desired.

[0003] JP 2023-45865 A

[0004] The embodiments provide a semiconductor device capable of improving characteristics.

[0005] According to an embodiment, a semiconductor device includes a first electrode, a second electrode, a third electrode, a first semiconductor member, a second semiconductor member, a third semiconductor member, a fourth semiconductor member, and a first insulating member. The first semiconductor member is provided between the first electrode and the second electrode and is of a first conductivity type. The first semiconductor member includes a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region. The second partial region and the third partial region are located between a portion of the first partial region and the second electrode in a first direction from the first electrode to the second electrode. A second direction from the second partial region to the third partial region intersects the first direction. The fourth partial region is located between a portion of the third partial region and the second electrode in the first direction. The fourth partial region is in Schottky contact with the second electrode. The fifth partial region extends along the second direction. The fifth partial region is connected to the second partial region and the third partial region. The second semiconductor member is of a second conductivity type. The second semiconductor member includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, and a fifth semiconductor region. The first semiconductor region and the second semiconductor region are located between another portion of the first partial region and the second electrode in the first direction. The first semiconductor region and the second semiconductor region are located between the second partial region and the third partial region in the second direction. A third direction from the first semiconductor region to the second semiconductor region intersects with a plane including the first direction and the second direction. The fifth partial region is located between the first semiconductor region and the second semiconductor region in the third direction. The third semiconductor region is located between the first semiconductor region and the second electrode in the first direction. The fourth semiconductor region is located between the second semiconductor region and the second electrode in the first direction. The fifth semiconductor region is located between the fifth partial region and the second electrode in the first direction. The third semiconductor member is of the second conductivity type. A portion of the third semiconductor member is located between the third semiconductor region and the second electrode and is electrically connected to the second electrode. A third impurity concentration of the second conductivity type in the third semiconductor member is higher than a second impurity concentration of the second conductivity type in the second semiconductor member. The fourth semiconductor member is of the first conductivity type.A portion of the fourth semiconductor member is located between the third semiconductor region and the second electrode and is electrically connected to the second electrode. A fourth impurity concentration of the first conductivity type in the fourth semiconductor member is higher than a first impurity concentration of the first conductivity type in the first semiconductor member. A direction from the second partial region to at least a portion of the third electrode is along the first direction. The first insulating member includes a first insulating region. The first insulating region is provided between the second partial region and at least a portion of the third electrode.

[0006] FIG. 1 is a schematic separated cross-sectional view illustrating a semiconductor device according to a first embodiment. FIG. 2 is a schematic perspective view illustrating the semiconductor device according to the first embodiment. FIGS. 3A to 3D are schematic cross-sectional views illustrating the semiconductor device according to the first embodiment. FIG. 4 is a schematic plan view illustrating the semiconductor device according to the first embodiment. FIGS. 5A to 5D are schematic cross-sectional views illustrating a semiconductor device according to a second embodiment. FIG. 6 is a schematic cross-sectional view illustrating a semiconductor device according to a third embodiment. FIG. 7 is a schematic cross-sectional view illustrating a semiconductor device according to a fourth embodiment.

[0007] Hereinafter, each embodiment of the present invention will be described with reference to the drawings. The drawings are schematic or conceptual, and the relationship between the thickness and width of each part, the size ratio between parts, etc., are not necessarily the same as those in reality. Even when the same part is shown, the dimensions and ratios may be different depending on the drawing. In this specification and each drawing, elements similar to those previously described with reference to the previous drawings are designated by the same reference numerals, and detailed descriptions will be omitted as appropriate.

[0008] First Embodiment FIG. 1 is a schematic separated cross-sectional view illustrating a semiconductor device according to a first embodiment. FIG. 2 is a schematic perspective view illustrating the semiconductor device according to the first embodiment. FIGS. 3( a) to 3(d) are schematic cross-sectional views illustrating the semiconductor device according to the first embodiment. As shown in FIGS. 1 and 2, a semiconductor device 110 according to the embodiment includes a first electrode 51, a second electrode 52, a third electrode 53, a first semiconductor member 11, a second semiconductor member 12, a third semiconductor member 13, a fourth semiconductor member 14, and a first insulating member 41. The third electrode 53 and the first insulating member 41 are omitted in FIG. 1. In FIG. 1, elements included in the semiconductor device 110 are shown separated from one another.

[0009] The first direction D1 from the first electrode 51 to the second electrode 52 is defined as the Z-axis direction. The direction perpendicular to the Z-axis direction is defined as the X-axis direction. The direction perpendicular to the Z-axis direction and the X-axis direction is defined as the Y-axis direction.

[0010] The first semiconductor member 11 is provided between the first electrode 51 and the second electrode 52. The first semiconductor member 11 is of a first conductivity type.

[0011] The first semiconductor member 11 includes a first partial region 11a, a second partial region 11b, a third partial region 11c, a fourth partial region 11d, and a fifth partial region 11e. The second partial region 11b and the third partial region 11c are located between a part of the first partial region 11a and the second electrode 52 in a first direction D1 from the first electrode 51 to the second electrode 52. A second direction D2 from the second partial region 11b to the third partial region 11c intersects with the first direction D1. The second direction D2 may be, for example, the X-axis direction.

[0012] The fourth partial region 11d is located in the first direction D1 between a part of the third partial region 11c and the second electrode 52. The fourth partial region 11d is in Schottky contact with the second electrode 52.

[0013] The fifth partial region 11e extends along the second direction D2. The fifth partial region 11e is connected to the second partial region 11b and the third partial region 11c. At least a portion of the fifth partial region 11e is located between the second partial region 11b and the third partial region 11c in the second direction D2.

[0014] The boundaries between the first partial region 11a, the second partial region 11b, the third partial region 11c, the fourth partial region 11d, and the fifth partial region 11e may be clear or unclear.

[0015] The second semiconductor member 12 has a second conductivity type. The first conductivity type is one of n-type and p-type. The second conductivity type is the other of n-type and p-type. Hereinafter, the first conductivity type is n-type and the second conductivity type is p-type.

[0016] The second semiconductor member 12 includes a first semiconductor region 12a, a second semiconductor region 12b, a third semiconductor region 12c, a fourth semiconductor region 12d, and a fifth semiconductor region 12e. The first semiconductor region 12a and the second semiconductor region 12b are located between another part of the first partial region 11a and the second electrode 52 in the first direction D1. The first semiconductor region 12a and the second semiconductor region 12b are located between the second partial region 11b and the third partial region 11c in the second direction D2. A third direction D3 from the first semiconductor region 12a to the second semiconductor region 12b intersects with a plane including the first direction D1 and the second direction D2. The third direction D3 may be, for example, the Y-axis direction.

[0017] The fifth partial region lie is located between the first semiconductor region 12a and the second semiconductor region 12b in the third direction D3. The first semiconductor region 12a and the second semiconductor region 12b are separated by the fifth partial region lie.

[0018] The boundaries between the first semiconductor region 12a, the second semiconductor region 12b, the third semiconductor region 12c, the fourth semiconductor region 12d, and the fifth semiconductor region 12e may be clear or unclear.

[0019] The third semiconductor region 12c is located in the first direction D1 between the first semiconductor region 12a and the second electrode 52. The fourth semiconductor region 12d is located in the first direction D1 between the second semiconductor region 12b and the second electrode 52. The fifth semiconductor region 12e is located in the first direction D1 between the fifth partial region 11e and the second electrode 52.

[0020] The third semiconductor member 13 is of the second conductivity type. A portion 13a of the third semiconductor member 13 is between the third semiconductor region 12c and the second electrode 52. The portion 13a of the third semiconductor member 13 is electrically connected to the second electrode 52. The third impurity concentration of the second conductivity type in the third semiconductor member 13 is higher than the second impurity concentration of the second conductivity type in the second semiconductor member 12. For example, the second semiconductor member 12 is a p region. The third semiconductor member 13 is, for example, a p ＋ It is an area.

[0021] The fourth semiconductor member 14 is of the first conductivity type. A portion of the fourth semiconductor member 14 is between the third semiconductor region 12c and the second electrode 52. A portion of the fourth semiconductor member 14 is electrically connected to the second electrode 52. The fourth impurity concentration of the first conductivity type in the fourth semiconductor member 14 is higher than the first impurity concentration of the first conductivity type in the first semiconductor member 11. For example, the first semiconductor member 11 is an n region. The fourth semiconductor member 14 is an n ＋ It is an area.

[0022] The direction from the second partial region 11b to at least a portion of the third electrode 53 lies along the first direction D1. The first insulating member 41 includes a first insulating region 41a. The first insulating region 41a is provided between the second partial region 11b and at least a portion of the third electrode 53. The first insulating member 41 electrically insulates the second partial region 11b from the third electrode 53. A portion of the first insulating member 41 is provided between the fourth semiconductor member 14 and the third electrode 53. The first insulating member 41 electrically insulates the fourth semiconductor member 14 from the third electrode 53.

[0023] The current flowing between the first electrode 51 and the second electrode 52 can be controlled by the potential of the third electrode 53. The potential of the third electrode 53 may be a potential based on the potential of the second electrode 52. The first electrode 51 functions as, for example, a drain electrode. The second electrode 52 functions as, for example, a source electrode. The third electrode 53 functions as, for example, a gate electrode. The semiconductor device 110 is, for example, a transistor.

[0024] The second partial region 11b corresponds to, for example, a JFET (Junction Field Effect Transistor) region. The third partial region 11c functions as, for example, a current spreading layer. The fourth partial region 11d functions as part of a Schottky barrier diode (SBD). The region including the fourth semiconductor member 14 functions as a p-n body diode.

[0025] In the semiconductor device 110, by providing the SBD including the fourth partial region 11d, a current flows through the SBD when a reverse voltage is applied, for example, and therefore the pn body diode is less likely to be turned on.

[0026] The semiconductor device 110 includes a fifth partial region 11e. As shown in FIG. 1, when a reverse voltage is applied, a portion of the current i1 flowing through the fourth partial region 11d can flow through the fifth partial region 11e to the second partial region 11b. This prevents the semiconductor device from being deteriorated by hole injection when a reverse voltage is applied. According to the embodiment, the reverse conduction characteristics can be improved.

[0027] A reference example may be considered in which the fifth partial region 11 e is not provided. In this reference example, when a reverse voltage is applied, the current i1 flowing through the fourth partial region 11 d has difficulty flowing toward the second partial region 11 b. In this reference example, the reverse conduction characteristics are insufficient.

[0028] In contrast, in the embodiment, the fifth partial region 11 e allows a portion of the current i1 flowing through the fourth partial region 11 d to flow to the second partial region 11 b through the fifth partial region 11 e. According to the embodiment, the reverse conduction characteristics can be improved. According to the embodiment, a semiconductor device with improved characteristics can be provided.

[0029] In the semiconductor device 110 , the portion 13 a of the third semiconductor member 13 may be in ohmic contact with the second electrode 52 , for example.

[0030] 1, another portion 13b of the third semiconductor member 13 is located between the fourth semiconductor region 12d and the second electrode 52. The other portion 13b of the third semiconductor member 13 may be in ohmic contact with the second electrode 52.

[0031] 1, the semiconductor device 110 may include a first conductive layer 31. The first conductive layer 31 includes, for example, silicide. At least a portion of the first conductive layer 31 is provided between the third semiconductor member 13 and the second electrode 52. The first conductive layer 31 includes, for example, NiSi. For example, an electrical connection with low electrical resistance can be obtained.

[0032] 1, the second electrode 52 may include a facing region 52p. The facing region 52p faces the fourth partial region 11d. The facing region 52p includes, for example, at least one selected from the group consisting of Ni, Ti, V, and Mo. A Schottky junction is obtained in the portion including the facing region 52p. The entire lower surface of the second electrode 52, including the facing region 52p, may include the above material.

[0033] 1, the semiconductor device 110 may further include a fifth semiconductor member 15 of the first conductivity type. A portion of the fifth semiconductor member 15 is located between a portion 13a of the third semiconductor member 13 and the second electrode 52. A portion of the fifth semiconductor member 15 is electrically connected to the second electrode 52. The concentration of the fifth impurity of the first conductivity type in the fifth semiconductor member 15 is higher than the concentration of the fourth impurity. The fifth semiconductor member 15 may be, for example, n ＋＋ At least a portion of the first conductive layer 31 (for example, a silicide layer) may be provided between the fifth semiconductor member 15 and the second electrode 52 .

[0034] 1 and 2, the semiconductor device 110 may further include a sixth semiconductor member 16 of the first conductivity type. The sixth semiconductor member 16 is provided between the first electrode 51 and the first semiconductor member 11 in the first direction D1. The sixth impurity concentration of the first conductivity type in the sixth semiconductor member 16 is lower than the first impurity concentration. The sixth semiconductor member 16 may be, for example, n － The sixth semiconductor member 16 is, for example, a drift layer.

[0035] The semiconductor device 110 may further include a seventh semiconductor member 17 of the first conductivity type. The seventh semiconductor member 17 is provided between the first electrode 51 and the sixth semiconductor member 16 in the first direction D1. The seventh impurity concentration of the first conductivity type in the seventh semiconductor member 17 is higher than the first impurity concentration. The seventh semiconductor member 17 may be, for example, n ＋ It is an area.

[0036] Fig. 3(a) is a cross-sectional view in the XY plane including the fourth semiconductor member 14. Fig. 3(b) is a cross-sectional view in the XY plane including the fifth semiconductor member 15. Fig. 3(c) is a cross-sectional view in the XY plane including the third semiconductor region 12c. Fig. 3(d) is a cross-sectional view in the XY plane including the fifth partial region 11e.

[0037] 3(c) and 3(d), the direction from the position of the fifth partial region 11e in the third direction D3 to the position of the fourth partial region 11d in the third direction D3 is along the second direction D2 (see FIG. 1). As shown in FIG. 3(c) and 3(d), for example, the position of the fifth partial region 11e in the third direction D3 coincides with the position of the fourth partial region 11d in the third direction D3.

[0038] 1, the first semiconductor member 11 may further include a sixth partial region 11f, a seventh partial region 11g, and an eighth partial region 11h. The sixth partial region 11f is located between another part of the first partial region 11a and the second electrode 52 in the first direction D1. The second partial region 11b is located between the sixth partial region 11f and the third partial region 11c in the second direction D2. The sixth partial region 11f functions, for example, as a current spreading layer.

[0039] The seventh partial region 11g is located in the first direction D1 between a part of the sixth partial region 11f and the second electrode 52. The seventh partial region 11g is in Schottky contact with the second electrode 52.

[0040] The eighth partial region 11h extends along the second direction D2. The eighth partial region 11h is connected to the sixth partial region 11f and the second partial region 11b. The eighth partial region 11h is provided, for example, between the sixth partial region 11f and the second partial region 11b.

[0041] The second semiconductor member 12 further includes a sixth semiconductor region 12 f, a seventh semiconductor region 12 g, an eighth semiconductor region 12 h, a ninth semiconductor region 12 i, and a tenth semiconductor region 12 j. The sixth semiconductor region 12 f and the seventh semiconductor region 12 g are located between another part of the first partial region 11 a and the second electrode 52 in the first direction D1.

[0042] The sixth semiconductor region 12f and the seventh semiconductor region 12g are located between the sixth partial region 11f and the second partial region 11b in the second direction D2. The direction from the sixth semiconductor region 12f to the seventh semiconductor region 12g is along the third direction D3.

[0043] The eighth partial region 11h is located between the sixth semiconductor region 12f and the seventh semiconductor region 12g in the third direction D3.

[0044] The eighth semiconductor region 12h is located in the first direction D1 between the sixth semiconductor region 12f and the second electrode 52. The ninth semiconductor region 12i is located in the first direction D1 between the seventh semiconductor region 12g and the second electrode 52. The tenth semiconductor region 12j is located in the first direction D1 between the eighth partial region 11h and the second electrode 52.

[0045] For example, the eighth partial region 11h separates the sixth semiconductor region 12f from the seventh semiconductor region 12g. When a reverse voltage is applied, a portion of the current flowing through the seventh partial region 11g can pass through the eighth partial region 11h and flow to the second partial region 11b. This prevents the semiconductor device from being deteriorated by hole injection when a reverse voltage is applied. According to the embodiment, the reverse conduction characteristics can be improved.

[0046] As shown in FIG. 3D, in the example of the semiconductor device 110, the direction from the eighth partial region 11h to the fifth partial region 11e is along the second direction D2.

[0047] In this example, the direction from the seventh partial region 11g to the fourth partial region 11d is along the second direction D2. The direction from a position in the seventh partial region 11g in the third direction D3 to a position in the eighth partial region 11h in the third direction D3 is along the direction from a position in the fifth partial region 11e in the third direction D3 to a position in the fourth partial region 11d in the third direction.

[0048] 1 , a portion 13c of the third semiconductor member 13 is located between the eighth semiconductor region 12h and the second electrode 52. The portion 13c of the third semiconductor member 13 is electrically connected to the second electrode 52. A portion 13d of the third semiconductor member 13 is located between the ninth semiconductor region 12i and the second electrode 52. The portion 13d of the third semiconductor member 13 is electrically connected to the second electrode 52.

[0049] 4 is a schematic plan view illustrating the semiconductor device according to the first embodiment. As shown in FIG. 4, the semiconductor device 110 includes a first region r1 and a second region r2. The first region r1 is, for example, a region where the fourth partial region 11d or the seventh partial region 11g is provided. The first region r1 is, for example, a region where an SBD is provided. The second region r2 is, for example, a region where the third semiconductor member 13 is provided. The second region r2 is, for example, a region where an ohmic junction is provided. The second region r2 may include, for example, a region where the fourth semiconductor member 14 is provided. The second region r2 may include, for example, a region where the fifth semiconductor member 15 is provided.

[0050] In the semiconductor device 110, the direction from the position of the fifth partial region 11e in the third direction D3 to the position of the first region r1 in the third direction D3 is along the second direction D2. The position of the fifth partial region 11e in the third direction D3 coincides with the position of the first region r1 in the third direction D3.

[0051] 5A to 5D are schematic cross-sectional views illustrating a semiconductor device according to a second embodiment. As shown in FIGS. 5C and 5D, in a semiconductor device 111 according to the embodiment, the relative positional relationship between the eighth partial region 11h and the fifth partial region 11e is different from that in the semiconductor device 110. Except for this, the configuration of the semiconductor device 111 may be the same as the configuration of the semiconductor device 110.

[0052] In the semiconductor device 111, the direction from the eighth partial region 11h to the fifth partial region 11e intersects with the second direction D2. The eighth partial region 11h is provided at a position shifted with respect to the fifth partial region 11e.

[0053] The semiconductor device 111 also has improved reverse conduction characteristics. The semiconductor device 111 has, for example, good structural symmetry. This makes it easier for current to diffuse uniformly into the drift layer. For example, the on-resistance during forward on-state is low. For example, the short-circuit resistance is good. For example, the resistance during reverse conduction is low.

[0054] 6 is a schematic cross-sectional view illustrating a semiconductor device according to a third embodiment. As shown in FIG. 6, in a semiconductor device 112 according to the embodiment, the position of the fifth partial region 11e is shifted with respect to the first region r1. Except for this, the configuration of the semiconductor device 112 may be similar to the configuration of the semiconductor device 110.

[0055] In the semiconductor device 112, the direction from the position of the fifth partial region 11 e in the third direction D3 to the position of the fourth partial region 11 d in the third direction D3 intersects with the second direction D2. For example, the position of the fifth partial region 11 e in the third direction D3 is between the position of the part 13 a of the third semiconductor member 13 in the third direction D3 and the position of the fourth partial region 11 d in the third direction D3.

[0056] The reverse conduction characteristics can also be improved in the semiconductor device 112. In the semiconductor device 112, for example, a current (SBD current) passing through the fourth partial region 11d flows through multiple paths to the second partial region 11b. For example, the effect of suppressing pn diode operation in the second partial region 11b is improved.

[0057] In the semiconductor device 112, the direction from the eighth partial region 11h to the fifth partial region 11e is along the second direction D2. The direction from a position in the seventh partial region 11g in the third direction D3 to a position in the eighth partial region 11h in the third direction D3 intersects with the second direction D2. The direction from a position in the fifth partial region 11e in the third direction D3 to a position in the fourth partial region 11d in the third direction D3 intersects with the second direction D2.

[0058] 7 is a schematic cross-sectional view illustrating a semiconductor device according to a fourth embodiment. As shown in FIG. 7 , in a semiconductor device 113 according to the embodiment, the position of the eighth partial region 11 h in the third direction D3 is shifted relative to the position of the fifth partial region 11 e in the third direction D3. Except for this, the configuration of the semiconductor device 113 may be similar to the configuration of the semiconductor device 110.

[0059] In the semiconductor device 113, the direction from the eighth partial region 11h to the fifth partial region 11e intersects with the second direction D2. The direction from a position in the seventh partial region 11g in the third direction D3 to a position in the eighth partial region 11h in the third direction D3 intersects with the second direction D2. The direction from a position in the fifth partial region 11e in the third direction D3 to a position in the fourth partial region 11d in the third direction D3 intersects with the second direction D2.

[0060] The semiconductor device 113 also has improved reverse conduction characteristics. In the semiconductor device 113, for example, conductivity modulation of the pn diode is likely to occur when a large reverse conduction current inrush occurs. This suppresses the conduction voltage drop and ensures surge current resistance. For example, if the operation of the pn diode is excessively suppressed by the SBD current, surge resistance may deteriorate. In the semiconductor device 113, the SBD effect is appropriately adjusted, resulting in well-balanced overall characteristics.

[0061] In the embodiment, for example, the first semiconductor member 11, the second semiconductor member 12, the third semiconductor member 13, and the fourth semiconductor member 14 contain SiC. The first semiconductor member 11, the second semiconductor member 12, the third semiconductor member 13, and the fourth semiconductor member 14 may contain at least one selected from the group consisting of 4H—SiC, 6H—SiC, and 3C—SiC. These semiconductor regions include crystals. These semiconductor members may contain silicon. These semiconductor members may contain a compound semiconductor containing Ga.

[0062] For example, the impurities of the first conductivity type include at least one selected from the group consisting of N, P, and As. For example, the impurities of the second conductivity type include at least one selected from the group consisting of B, Al, and Ga.

[0063] In one example, the concentration of the impurity of the first conductivity type in the first semiconductor member 11 is, for example, 1×10 １６ cm －３ 1x10 or more １８ cm －３ In one example, the concentration of the impurity of the second conductivity type in the second semiconductor member 12 is, for example, 1×10 １７ cm －３ 1x10 or more ２０ cm －３ In one example, the concentration of the second conductivity type impurity in the third semiconductor member 13 is, for example, 1×10 １９ cm －３ 1x10 or more ２１ cm －３ In one example, the concentration of the impurity of the first conductivity type in the fourth semiconductor member 14 is, for example, 1×10 １９ cm －３ 1x10 or more ２１ cm －３ In one example, the concentration of the impurity of the first conductivity type in the fifth semiconductor member 15 is, for example, 1×10 １９ cm －３ 1x10 or more ２１ cm －３ In one example, the concentration of the impurity of the first conductivity type in the sixth semiconductor member 16 is, for example, 1×10 １４ cm －３ 1x10 or more １７ cm －３ In one example, the concentration of the impurity of the first conductivity type in the seventh semiconductor member 17 is, for example, 1×10 １５ cm －３ 1x10 or more １８ cm －３ The above impurity concentrations may correspond to carrier concentrations, for example.

[0064] In an embodiment, information about the length and thickness can be obtained by electron microscopy, etc. Information about the composition of the material can be obtained by SIMS (Secondary Ion Mass Spectrometry) or EDX (Energy Dispersive X-ray spectroscopy), etc.

[0065] The embodiments may include the following technical solutions: (Technical Solution 1) A first electrode, a second electrode, and a first semiconductor member of a first conductivity type provided between the first electrode and the second electrode, the first semiconductor member including a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region, the second partial region and the third partial region being between a part of the first partial region and the second electrode in a first direction from the first electrode to the second electrode, a second direction from the second partial region to the third partial region intersecting the first direction, the fourth partial region being between a part of the third partial region and the second electrode in the first direction, the fourth partial region being in Schottky contact with the second electrode, and the fifth partial region extending along the second direction and connected to the second partial region and the third partial region; a second semiconductor member of a second conductivity type, the second semiconductor member including a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, and a fifth semiconductor region, the first semiconductor region and the second semiconductor region being between another part of the first partial region and the second electrode in the first direction, the first semiconductor region and the second semiconductor region being between the second partial region and the third partial region in the second direction, a third direction from the first semiconductor region to the second semiconductor region intersecting a plane including the first direction and the second direction, the fifth partial region being between the first semiconductor region and the second semiconductor region in the third direction, the third semiconductor region being between the first semiconductor region and the second electrode in the first direction, the fourth semiconductor region being between the second semiconductor region and the second electrode in the first direction, and the fifth semiconductor region being between the fifth partial region and the second electrode in the first direction; a third semiconductor member of the second conductivity type, a portion of the third semiconductor member being between the third semiconductor region and the second electrode and electrically connected to the second electrode, and a third impurity concentration of the second conductivity type in the third semiconductor member being higher than a second impurity concentration of the second conductivity type in the second semiconductor member;a fourth semiconductor member of the first conductivity type, a portion of the fourth semiconductor member being between the third semiconductor region and the second electrode and electrically connected to the second electrode, wherein a fourth impurity concentration of the first conductivity type in the fourth semiconductor member is higher than a first impurity concentration of the first conductivity type in the first semiconductor member; a third electrode, wherein a direction from the second partial region to at least a portion of the third electrode is along the first direction; and a first insulating member including a first insulating region, wherein the first insulating region is provided between the second partial region and at least a portion of the third electrode.

[0066] (Technical Solution 2) The semiconductor device according to Technical Solution 1, wherein the portion of the third semiconductor member is in ohmic contact with the second electrode.

[0067] (Technical Solution 3) The semiconductor device according to Technical Solution 1 or 2, wherein another part of the third semiconductor member is located between the fourth semiconductor region and the second electrode and is in ohmic contact with the second electrode.

[0068] (Technical proposal 4) The semiconductor device according to any one of Technical proposals 1 to 3, further comprising a fifth semiconductor member of the first conductivity type, a portion of the fifth semiconductor member being between the portion of the third semiconductor member and the second electrode and electrically connected to the second electrode, and a fifth impurity concentration of the first conductivity type in the fifth semiconductor member being higher than the fourth impurity concentration.

[0069] (Technical proposal 5) A semiconductor device described in any one of Technical proposals 1 to 4, wherein the direction from a position of the fifth partial region in the third direction to a position of the fourth partial region in the third direction is along the second direction.

[0070] (Technical Solution 6) The semiconductor device according to any one of Technical Solutions 1 to 4, wherein the position of the fifth partial region in the third direction coincides with the position of the fourth partial region in the third direction.

[0071] (Technical proposal 7) A semiconductor device described in any one of Technical proposals 1 to 4, wherein the direction from a position in the third direction of the fifth partial region to a position in the third direction of the fourth partial region intersects with the second direction.

[0072] (Technical proposal 8) A semiconductor device described in any one of Technical proposals 1 to 4, wherein the position of the fifth partial region in the third direction is between the position of the part of the third semiconductor member in the third direction and the position of the fourth partial region in the third direction.

[0073] (Technical Solution 9) The first semiconductor member further includes a sixth partial region, a seventh partial region, and an eighth partial region, wherein the sixth partial region is between another part of the first partial region and the second electrode in the first direction, the second partial region is between the sixth partial region and the third partial region in the second direction, and the seventh partial region is between a part of the sixth partial region and the second electrode in the first direction, and the seventh partial region is in Schottky contact with the second electrode, and the eighth partial region extends along the second direction and is connected to the sixth partial region and the second partial region, the second semiconductor member further includes a sixth semiconductor region, a seventh semiconductor region, an eighth semiconductor region, a ninth semiconductor region, and a tenth semiconductor region, wherein the sixth semiconductor region and the seventh semiconductor region are between another part of the first partial region and the second electrode in the first direction, and the sixth semiconductor region and the seventh semiconductor region are between the sixth partial region and the second partial region in the second direction, The semiconductor device described in any one of Technical Solutions 1 to 4, wherein the direction from the sixth semiconductor region to the seventh semiconductor region is along the third direction, the eighth partial region is between the sixth semiconductor region and the seventh semiconductor region in the third direction, the eighth semiconductor region is between the sixth semiconductor region and the second electrode in the first direction, the ninth semiconductor region is between the seventh semiconductor region and the second electrode in the first direction, and the tenth semiconductor region is between the eighth partial region and the second electrode in the first direction.

[0074] (Technical Solution 10) The semiconductor device according to Technical Solution 9, wherein the direction from the eighth partial region to the fifth partial region is along the second direction.

[0075] (Technical proposal 11) A semiconductor device described in Technical proposal 9, wherein the direction from the seventh partial region to the fourth partial region is along the second direction, and the direction from a position of the seventh partial region in the third direction to a position of the eighth partial region in the third direction is along the direction from a position of the fifth partial region in the third direction to a position of the fourth partial region in the third direction.

[0076] (Technical Solution 12) The semiconductor device according to Technical Solution 9, wherein the direction from the eighth partial region to the fifth partial region intersects with the second direction.

[0077] (Technical proposal 13) A semiconductor device described in Technical proposal 9, wherein the direction from the eighth partial region to the fifth partial region is along the second direction, the direction from a position in the seventh partial region in the third direction to a position in the eighth partial region in the third direction intersects the second direction, and the direction from a position in the fifth partial region in the third direction to a position in the fourth partial region in the third direction intersects the second direction.

[0078] (Technical proposal 14) A semiconductor device described in Technical proposal 9, wherein the direction from the eighth partial region to the fifth partial region intersects the second direction, the direction from a position in the seventh partial region in the third direction to a position in the eighth partial region in the third direction intersects the second direction, and the direction from a position in the fifth partial region in the third direction to a position in the fourth partial region in the third direction intersects the second direction.

[0079] (Technical proposal 15) A semiconductor device described in any one of Technical proposals 1 to 14, further comprising a sixth semiconductor member of the first conductivity type, wherein the sixth semiconductor member is provided between the first electrode and the first semiconductor member in the first direction, and a sixth impurity concentration of the first conductivity type in the sixth semiconductor member is lower than the first impurity concentration.

[0080] (Technical proposal 16) A semiconductor device as described in Technical proposal 15, further comprising a seventh semiconductor member of the first conductivity type, wherein the seventh semiconductor member is arranged between the first electrode and the sixth semiconductor member in the first direction, and wherein a seventh impurity concentration of the first conductivity type in the seventh semiconductor member is higher than the first impurity concentration.

[0081] (Technical Solution 17) The semiconductor device according to any one of Technical Solutions 1 to 16, further comprising a first conductive layer containing silicide, wherein at least a portion of the first conductive layer is provided between the third semiconductor member and the second electrode.

[0082] (Technical proposal 18) The semiconductor device described in any one of Technical proposals 1 to 17, wherein the second electrode includes an opposing region that faces the fourth partial region, and the opposing region includes at least one selected from the group consisting of Ni, Ti, V, and Mo.

[0083] (Technical proposal 19) The semiconductor device according to any one of Technical proposals 1 to 18, wherein the first semiconductor member, the second semiconductor member, the third semiconductor member, and the fourth semiconductor member contain SiC.

[0084] (Technical Solution 20) The semiconductor device according to any one of Technical Solutions 1 to 19, wherein a portion of the first insulating member is provided between the fourth semiconductor member and the third electrode.

[0085] According to the embodiment, a semiconductor device with improved characteristics can be provided.

[0086] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configurations of the elements included in the semiconductor device, such as the electrodes, semiconductor members, and insulating members, are within the scope of the present invention as long as a person skilled in the art can implement the present invention in a similar manner and obtain similar effects by appropriately selecting them from known ranges.

[0087] Furthermore, any combination of two or more elements of each specific example within the scope of technical feasibility is also included within the scope of the present invention as long as it includes the gist of the present invention.

[0088] In addition, all semiconductor devices that can be implemented by a person skilled in the art by appropriately modifying the design based on the semiconductor device described above as an embodiment of the present invention also fall within the scope of the present invention as long as they include the gist of the present invention.

[0089] In addition, within the scope of the concept of the present invention, a person skilled in the art may come up with various modifications and alterations, and it will be understood that these modifications and alterations also fall within the scope of the present invention.

[0090] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, and are also included in the scope of the invention and its equivalents as defined in the claims.

[0091] 11-17: 1st to 7th semiconductor members, 11a-11h: 1st to 8th partial regions, 12a-12j: 1st to 10th semiconductor regions, 13a-13d: Part, 31: First conductive layer, 41: First insulating member, 41a: First insulating region, 51-53: 1st to 3rd electrodes, 52p: Opposing region, 110-113: Semiconductor device, D1-D3: 1st to 3rd directions, r1, r2: 1st and 2nd regions

Claims

1. A first semiconductor member of a first conductivity type provided between a first electrode and a second electrode, the first semiconductor member including a first partial region, a second partial region, a third partial region, a fourth partial region, and a fifth partial region, the second partial region and the third partial region being between a part of the first partial region and the second electrode in a first direction from the first electrode to the second electrode, a second direction from the second partial region to the third partial region intersecting the first direction, the fourth partial region being between a part of the third partial region and the second electrode in the first direction, the fourth partial region being in Schottky contact with the second electrode, the fifth partial region extending along the second direction, and the fifth partial region being connected to the second partial region and the third partial region; A second semiconductor member of a second conductivity type, the second semiconductor member including a first semiconductor region, a second semiconductor region, a third semiconductor region, a fourth semiconductor region, and a fifth semiconductor region, the first semiconductor region and the second semiconductor region being between another part of the first partial region and the second electrode in the first direction, the first semiconductor region and the second semiconductor region being between the second partial region and the third partial region in the second direction, a third direction from the first semiconductor region to the second semiconductor region intersects with a plane including the first direction and the second direction, the fifth partial region being between the first semiconductor region and the second semiconductor region in the third direction, the third semiconductor region being between the first semiconductor region and the second electrode in the first direction, the fourth semiconductor region being between the second semiconductor region and the second electrode in the first direction, and the fifth semiconductor region being between the fifth partial region and the second electrode in the first direction; A third semiconductor member of the second conductivity type, a portion of the third semiconductor member being between the third semiconductor region and the second electrode and electrically connected to the second electrode, and a third impurity concentration of the second conductivity type in the third semiconductor member being higher than a second impurity concentration of the second conductivity type in the second semiconductor member;a fourth semiconductor member of the first conductivity type, a portion of the fourth semiconductor member being between the third semiconductor region and the second electrode and electrically connected to the second electrode, a fourth impurity concentration of the first conductivity type in the fourth semiconductor member being higher than a first impurity concentration of the first conductivity type in the first semiconductor member; a third electrode, a direction from the second partial region to at least a portion of the third electrode being along the first direction; and a first insulating member including a first insulating region, the first insulating region being provided between the second partial region and the at least a portion of the third electrode.

2. The semiconductor device described in claim 1, further comprising a fifth semiconductor member of the first conductivity type, a portion of the fifth semiconductor member being between the portion of the third semiconductor member and the second electrode and electrically connected to the second electrode, and a fifth impurity concentration of the first conductivity type in the fifth semiconductor member being higher than the fourth impurity concentration.

3. The semiconductor device according to claim 1, wherein a direction from a position of said fifth partial region in said third direction to a position of said fourth partial region in said third direction is along said second direction.

4. The semiconductor device according to claim 1, wherein a direction from a position of said fifth partial region in said third direction to a position of said fourth partial region in said third direction intersects with said second direction.

5. A semiconductor device as described in claim 1, wherein the position of the fifth partial region in the third direction is between the position of the portion of the third semiconductor member in the third direction and the position of the fourth partial region in the third direction.

6. The first semiconductor member further includes a sixth partial region, a seventh partial region, and an eighth partial region, the sixth partial region being between another part of the first partial region and the second electrode in the first direction, the second partial region being between the sixth partial region and the third partial region in the second direction, the seventh partial region being between a part of the sixth partial region and the second electrode in the first direction, the seventh partial region being in Schottky contact with the second electrode, the eighth partial region extending along the second direction and the eighth partial region being connected to the sixth partial region and the second partial region, the second semiconductor member further includes a sixth semiconductor region, a seventh semiconductor region, an eighth semiconductor region, a ninth semiconductor region, and a tenth semiconductor region, the sixth semiconductor region and the seventh semiconductor region being between another part of the first partial region and the second electrode in the first direction, and the sixth semiconductor region and the seventh semiconductor region being between the sixth partial region and the second partial region in the second direction, 3. The semiconductor device according to claim 1 or 2, wherein the direction from the sixth semiconductor region to the seventh semiconductor region is along the third direction, the eighth partial region is between the sixth semiconductor region and the seventh semiconductor region in the third direction, the eighth semiconductor region is between the sixth semiconductor region and the second electrode in the first direction, the ninth semiconductor region is between the seventh semiconductor region and the second electrode in the first direction, and the tenth semiconductor region is between the eighth partial region and the second electrode in the first direction.

7. The semiconductor device according to claim 6, wherein a direction from said eighth partial region to said fifth partial region is along said second direction.

8. The semiconductor device according to claim 6, wherein a direction from said eighth partial region to said fifth partial region intersects with said second direction.

9. The semiconductor device described in claim 6, wherein a direction from the eighth partial region to the fifth partial region is along the second direction, a direction from a position of the seventh partial region in the third direction to a position of the eighth partial region in the third direction intersects with the second direction, and a direction from a position of the fifth partial region in the third direction to a position of the fourth partial region in the third direction intersects with the second direction.

10. The semiconductor device described in claim 6, wherein a direction from the eighth partial region to the fifth partial region intersects with the second direction, a direction from a position of the seventh partial region in the third direction to a position of the eighth partial region in the third direction intersects with the second direction, and a direction from a position of the fifth partial region in the third direction to a position of the fourth partial region in the third direction intersects with the second direction.

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