Semiconductor element manufacturing method and semiconductor element

Abstract

This semiconductor element manufacturing method comprises a conversion process for converting amorphous silicon into monocrystalline silicon. The conversion process includes: a first step for, through a treatment accompanying heat, forming a first film containing a first material so as to cover the amorphous silicon to form a silicide film in contact with the amorphous silicon; a second step for, after the first step and through a treatment accompanying heating, forming a second film containing a second material so as to cover the silicide film to form a compound comprising Si, the first material, and the second material so as to be in contact with the silicide film; and a third step for changing, into the compound through heating, the silicide film remaining after the second step. The first material is a material selected from the group consisting of Ni, Pd, Ti, Cu, Pt, Co, Mo, Mg, W, Cr, and Mn, and the second material is a material selected from the group consisting of Al, Au, Sb, In, Ag, and Ga.

Description

Semiconductor device manufacturing method and semiconductor device

[0001] The present invention relates to a method for manufacturing a semiconductor device and a semiconductor device.

[0002] One method for solving performance degradation due to increased channel resistance in semiconductor devices (e.g., thin film transistors, semiconductor memory devices) is to single-crystallize amorphous silicon or polycrystalline silicon in the channel. One method for single-crystallization is the MILC (Metal Induced Lateral Crystallization) process, which uses Ni silicide as the growth front for crystallization. As an example of the MILC process, the "Thin Film Transistor Using Metal Induced Lateral Crystallization Method and Its Fabrication Method" disclosed in Patent Document 1 will be described with reference to FIGS. 1 to 3. In FIGS. 1 to 3, reference numeral 200 denotes an insulating substrate, 210 denotes a buffer layer, 220 denotes an active layer, 221 and 225 denote source / drain regions, 223 denotes a channel region, 230 denotes a gate insulating film, 240 denotes a gate electrode, 250 denotes an interlayer insulating film, 251 and 255 denote contact holes, and 260 denotes a crystallization-induced metal film.

[0003] 1, an interlayer insulating film 250 is deposited on an insulating substrate 200 including a gate electrode 240, and contact holes 251 and 255 are formed to expose portions of source / drain regions 221 and 225. Next, a crystallization-inducing metal film 260 such as Ni is deposited on the insulating substrate 200 by a method such as sputtering.

[0004] 2, the amorphous silicon film of the active layer 220 is crystallized into a polycrystalline silicon film by heat treatment in a furnace (crystallization at a rate of 3 μm / hr at 550° C.). At this time, the amorphous silicon in the lower regions 221 a and 225 a below the crystallization-inducing metal film 260 in the contact holes 251 and 255 is crystallized by a metal induced crystallization (MIC) method, and the amorphous silicon in the other regions 221 b and 225 b is crystallized by a MILC method.

[0005] Next, as shown in FIG. 3, the crystallization-inducing metal film 260 is removed, and source / drain electrodes 271 and 275 are formed, thereby obtaining a thin film transistor.

[0006] Patent Document 2 discloses a nonvolatile semiconductor memory device that includes a semiconductor substrate, a first layer, a second conductive layer, a memory film, and a semiconductor layer, and a metal layer containing Ni, Co, Al, or Pd in ​​contact with the semiconductor layer, in order to improve operating speeds such as read speed, write speed, and erase speed while easing operation control and circuit layout design. Patent Document 2 also discloses that "when the metal layer 70 is made of a material that does not form silicide, such as Al, after annealing, the vicinity of the lower end of the semiconductor pillar SP may contain an alloy with Al, and the vicinity of the upper end of the semiconductor pillar SP may contain an alloy with Al. Furthermore, the semiconductor pillar SP may contain an alloy with Al, not just the vicinity of the upper and lower ends of the semiconductor pillar SP."

[0007] Patent Document 3 discloses a semiconductor memory device that includes a first wiring layer, a second wiring layer, and a memory pillar in order to improve processing capacity. ２ It is suitable for forming single-crystal silicon by MILC because its lattice constant has a mismatch of only about 0.3% with that of Si. It has been disclosed that examples of metal materials for crystallizing semiconductor pillars (e.g., silicon, silicon germanium, germanium) by MILC include Ni, Co, Al, and Pd.

[0008] Non-Patent Document 1 describes the lattice constant of Si, NiSi ２ lattice constant of NiSi ２－Ｘ Al Ｘ The horizontal axis of FIG. ２－Ｘ Al Ｘ The ratio X of Al to NiSi, a is the lattice constant of Si, and the vertical axis of FIG. 4 is the lattice constant. ２ The lattice constant of NiSi is 5.406, and the lattice constant of Si is 5.431. When the ratio of Al to NiSi is 0.24, ２－Ｘ Al Ｘ= 5.431, which is found to coincide with the lattice constant of Si. Note that the unit of the lattice constant in Non-Patent Document 1 is angstroms, and the description in this specification will also be given assuming that the unit of the lattice constant is angstroms.

[0009] JP 2005-159307 A JP 2014-175348 A JP 2019-165178 A

[0010] Klaus et all “Appl. Phys. Lett. 83, 497 (2003)” P497-499

[0011] The present invention provides a technique for converting amorphous silicon to single crystal silicon with a silicide having a lattice constant that more closely matches that of single crystal silicon.

[0012] A first aspect of the present invention relates to a method for manufacturing a semiconductor device, including a conversion step of converting amorphous silicon into single-crystal silicon, the conversion step including: a first step of forming a first film containing a first material so as to cover the amorphous silicon by a heat treatment, thereby forming a silicide film in contact with the amorphous silicon; a second step of forming a second film containing a second material so as to cover the silicide film by a heat treatment after the first step, thereby forming a compound composed of Si, the first material, and the second material so as to be in contact with the silicide film; and a third step of converting the silicide film remaining after the second step into the compound by a heat treatment, wherein the first material is one material selected from the group consisting of Ni, Pd, Ti, Cu, Pt, Co, Mo, Mg, W, Cr, and Mn, and the second material is one material selected from the group consisting of Al, Au, Sb, In, Ag, and Ga.

[0013] A second aspect of the present invention relates to a method for manufacturing a semiconductor device, including a conversion step of converting amorphous silicon into single-crystal silicon, the conversion step including: a first step of forming a first film containing a first material so as to cover the amorphous silicon; a second step of forming a second film containing a second material so as to cover the first film after the first step; and a third step of forming a compound containing Si, the first material, and the second material by heat treatment after the second step, wherein the first material is one material selected from the group consisting of Ni, Pd, Ti, Cu, Pt, Co, Mo, Mg, W, Cr, and Mn, and the second material is one material selected from the group consisting of Al, Au, Sb, In, Ag, and Ga.

[0014] A third aspect of the present invention relates to a semiconductor device including a stacked structure of amorphous silicon, a compound, and single crystal silicon, wherein in the semiconductor device, the compound is a compound of Si, a first material, and a second material, the first material is one material selected from the group consisting of Ni, Pd, Ti, Cu, Pt, Co, Mo, Mg, W, Cr, and Mn, and the second material is one material selected from the group consisting of Al, Au, Sb, In, Ag, and Ga.

[0015] 1. A process cross-sectional view for explaining a method for manufacturing a thin film transistor described in Patent Document 1. 2. A process cross-sectional view for explaining a method for manufacturing a thin film transistor described in Patent Document 1. 3. A process cross-sectional view for explaining a method for manufacturing a thin film transistor described in Patent Document 1. 4. The lattice constant of Si, NiSi, described in Non-Patent Document 1 ２ lattice constant of NiSi ２－Ｘ Al Ｘ1 is a diagram showing the relationship between the lattice constants of the first and second lattice constants. FIG. 1 is a process diagram showing a method for manufacturing a semiconductor element of the first embodiment. FIG. 2 is a process diagram showing a method for manufacturing a semiconductor element of the first embodiment. FIG. 3 is a process diagram showing a method for manufacturing a semiconductor element of the second embodiment. FIG. 4 is a process diagram showing a method for manufacturing a semiconductor element of the second embodiment. FIG. 5 is a process diagram showing a method for manufacturing a semiconductor element of the third embodiment. FIG. 6 is a process diagram showing a method for manufacturing a semiconductor element of the third embodiment. FIG. 7 is a process diagram showing a method for manufacturing a semiconductor element of the third embodiment. FIG. 8 is a process diagram showing a method for manufacturing a semiconductor element of the first embodiment. FIG. 9 is a process diagram showing a method for manufacturing a semiconductor element of the first embodiment. FIG. 10 is a process diagram showing a method for manufacturing a semiconductor element of the first embodiment. FIG. 11 is a process diagram showing a method for manufacturing a semiconductor element of the fourth embodiment. FIG. 12 is a process diagram showing a method for manufacturing a semiconductor element of the fourth embodiment. FIG. 13 is a process diagram showing a method for manufacturing a semiconductor element of the fourth embodiment. FIG. 14 is a process diagram showing a method for manufacturing a semiconductor element of the fourth embodiment. FIG. 15 is a process diagram showing a method for manufacturing a semiconductor element of the fourth embodiment. 10A and 10B are process diagrams showing a method for manufacturing a semiconductor element according to a fifth embodiment;

[0016] Hereinafter, embodiments will be described in detail with reference to the accompanying drawings. Note that the following embodiments do not limit the scope of the invention claimed. Although multiple features are described in the embodiments, not all of these multiple features are necessarily essential to the invention, and multiple features may be combined arbitrarily. Furthermore, in the accompanying drawings, the same reference numerals are used to designate the same or similar components, and redundant explanations will be omitted.

[0017] 5A to 5C are diagrams illustrating a first embodiment of a method for manufacturing a semiconductor device, including a conversion step for converting amorphous silicon 1 into single-crystal silicon 10. The inventors discovered through experiments in which an Al film and a Ni film were sequentially formed on amorphous silicon and a structure was heated that the Al film inhibits silicidation of the Ni film. The inventors also discovered through experiments in which a NiAl film was formed on amorphous silicon and a structure was heated that Al was not included in the Ni silicide but was instead pushed toward the surface of the NiAl film. The inventors also discovered a phenomenon in which, after forming a Ni film on amorphous silicon through a heating process to form a Ni silicide film in contact with the amorphous silicon, an Al film was then formed on the Ni silicide film through a heating process, whereby Al diffused into the Ni silicide film, forming NiAlSi. Since NiAlSi has a lattice constant close to that of single crystal silicon, single crystal silicon can be easily obtained by bringing NiAlSi into contact with amorphous silicon and performing a heat treatment. The following embodiments are based on the above findings.

[0018] The method for manufacturing a semiconductor device according to the first embodiment may include a conversion step of converting amorphous silicon 1 into single-crystal silicon 10. The amorphous silicon 1 may constitute a part of a substrate. The conversion step may include: a first step S1 of forming a first film 3 containing Ni (nickel) as a first material so as to cover the amorphous silicon 1 by a heat treatment involving heating, thereby forming Ni silicide as silicide 4 in contact with the amorphous silicon 1; a second step S2 of forming a second film 6 containing Al (aluminum) as a second material so as to cover the silicide 4 by a heat treatment after the first step S1, thereby forming NiAlSi as compound 7 composed of Si (silicon), Ni (first material), and Al (second material) so as to be in contact with the silicide 4; and a third step S3 of converting the silicide 4 remaining after the second step S2 into a NiAlSi film as compound 9 composed of Si, Ni (first material), and Al (second material) by a heat treatment.

[0019] This makes it possible to create a structure in which NiAlSi as the compound 9 is arranged so as to be in contact with the amorphous silicon 1 .

[0020] 5A shows a structure 101 at a stage where a first film 3 containing Ni as a first material is formed to cover the amorphous silicon 1 by heat treatment involving heating in the first step S1, and a structure 102 in which Ni silicide is formed as silicide 4. FIG. 5B shows a structure 104 at a stage where a second film 6 containing Al as a second material is formed to cover the silicide 4 by heat treatment, and a structure 105 at a stage where NiAlSi is formed as a compound 7 composed of Si, Ni (the first material), and Al (the second material) in contact with the silicide 4. FIG. 5C shows a structure 106 having silicide 4 remaining after the second step S2, and a structure 107 after the silicide 4 has been converted into compound 9 by heat treatment.

[0021] Here, instead of Ni, the first material may be Pd (palladium), Ti (titanium), Cu (copper), Pt (platinum), Co (cobalt), Mo (molybdenum), Mg (magnesium), W (tungsten), Cr (chromium), or Mn (manganese). That is, the first material may be one material selected from the group consisting of Ni, Pd, Ti, Cu, Pt, Co, Mo, Mg, W, Cr, and Mn.

[0022] As the second material, Au (gold), Sb (antimony), In (indium), Ag (silver), or Ga (gallium) may be used instead of Al. That is, the second material can be one material selected from the group consisting of Al, Au, Sb, In, Ag, and Ga.

[0023] The compound composed of Si, the first material, and the second material is preferably, for example, NiAlSi, NiAuSi, NiSbSi, NiInSi, NiAgSi, or NiGaSi.

[0024] The conversion step of converting the amorphous silicon 1 into single crystal silicon 10 may further include a fourth step S4 of converting at least a portion of the amorphous silicon 1 remaining after the third step S3 into single crystal silicon 10 by heat treatment. Figure 5C shows the structure 108 after at least a portion of the amorphous silicon 1 remaining after the third step S3 has been converted into single crystal silicon 10 by heat treatment. The fourth step may include a metal induced lateral crystallization (MILC) process.

[0025] The substrate on which the first step is performed includes an insulating film 2 (e.g., SiO ２ The amorphous silicon 1 and the insulating film 2 may be disposed in contact with each other or in close proximity to each other. In the first step S1, a first film 3 containing a first material (e.g., Ni) may be formed to cover the amorphous silicon 1 and the insulating film 2 by a treatment involving heating, thereby forming a silicide 4 in contact with the amorphous silicon 1 and a first material film 3′ in contact with the insulating film 2. FIG. 5A shows a structure 102 having the first material film 3′.

[0026] In this case, the conversion process may further include, between the first step S1 and the second step S2, a step of removing the first material film 3′ in contact with the insulating film 2 by chemical etching or the like. FIG. 5A shows a structure 103 from which the first material film 3′ has been removed. Removing the first material film 3′ prevents the silicide 4 from growing laterally and joining with other silicides 4, resulting in an electrical short. If the first material film 3′ in contact with the insulating film 2 has been removed, a second material film 8, which is part of the second film 6, remains in the portion covering the insulating film 2 when NiAlSi is formed as a compound 7 composed of Si, Ni (first material), and Al (second material) in contact with the silicide 4 in the second step S2. The second material film 8 may be removed after the second step S2 (e.g., between the second step S2 and the third step S3).

[0027] The thickness of the second film 6 formed in the second step S2 (the thickness of the second film 6 in the portion covering the Ni silicide 4) T ２is the thickness T of the first film 3 formed in the first step S1. １ The thickness T of the first film 3 formed in the first step S1 is larger than the thickness T of the first film 3 formed in the first step S2. １ It is preferable that the value is smaller than four times that of T. ２ <4T １ It is preferable that the following is satisfied.

[0028] T ２ = 0 corresponds to the value of X on the horizontal axis in FIG. 4 being 0. In this case, NiSi ２－０ Al ０ (i.e., NiSi ２ The lattice constant of T is 5.406. ２ = 4T １ corresponds to the value of X on the horizontal axis in Figure 4 being 0.54. When the value of X is 0.54, NiSi １．４６ Al ０．５４ The lattice constant of is 5.454.

[0029] 0<T ２ <4T １ If ２－ｘ Al ｘ The lattice constant of is given by:

[0030] 5.406<NiSi ２－ｘ Al ｘ Lattice constant of NiSi<5.454 ２ The lattice constant of SiO2 (5.406) is closer to that of Si (5.430), and therefore it is suitable for forming single crystal silicon by the MILC process.

[0031] This can reduce channel resistance, which is a problem in semiconductor elements such as thin film transistors and semiconductor memory devices (e.g., 3D NAND memories).

[0032] 6A to 6C are diagrams illustrating a second embodiment of a method for manufacturing a semiconductor device, including a conversion step of converting amorphous silicon 1 into single-crystal silicon 10. Matters not mentioned in the second embodiment may follow those of the first embodiment. FIG. 6A illustrates a first step S1, FIG. 6B illustrates a second step S2, and FIG. 6C illustrates a third step S3 and a fourth step S4.

[0033] In the second embodiment, the first material film 3′ in contact with the insulating film 2 is not removed between the first step S1 and the second step S2. Therefore, in the second step S2, a second film 6 containing Al as the second material is formed so as to cover the silicide 4 and the first material film 3′ by a treatment involving heating, thereby obtaining a compound 7 in contact with the silicide 4 and a second compound 11 of the first material and the second material in contact with the insulating film 2.

[0034] In the second embodiment, the conversion step may include a step of removing the second compound 11 in contact with the insulating film 2 between the second step S2 and the third step S3. Removing the second compound 11 can prevent the silicide 4 from growing laterally and joining with other silicides 4 to form an electrical short circuit. FIG. 6B shows a structure 106 from which the second compound 11 has been removed.

[0035] 7A to 7C are diagrams illustrating a third embodiment of a method for manufacturing a semiconductor device, including a conversion step of converting amorphous silicon into single-crystal silicon. Matters not mentioned in the third embodiment may conform to the first embodiment. Fig. 7A illustrates a first step S1, Fig. 7B illustrates a second step S2, and Fig. 7C illustrates a third step S3 and a fourth step S4.

[0036] In the third embodiment, the first material film 3′ in contact with the insulating film 2 is not removed between the first step S1 and the second step S2. Therefore, in the second step S2, a second film 6 containing Al as the second material is formed so as to cover the silicide 4 and the first material film 3′ by a treatment involving heating, thereby obtaining a compound 7 in contact with the silicide 4 and a second compound 11 of the first material and the second material in contact with the insulating film 2. Furthermore, in the second embodiment, the second compound 11 in contact with the insulating film 2 is not removed between the second step S2 and the third step S3.

[0037] In the third embodiment, the conversion step may include a step of removing the second compound 11 in contact with the insulating film 2 after the third step S3, more specifically, between the third step S3 and the fourth step S4. Removing the second compound 11 can prevent the silicide 4 from growing laterally and joining with other silicides 4 to cause an electrical short. Figure 7C shows a structure 107 from which the second compound 11 has been removed.

[0038] In the first to third embodiments, the referenced drawings show that the first and second films are formed on the amorphous silicon 1, but this merely indicates that the first and second films are formed on the amorphous silicon 1 in the orientation shown. Forming the first and second films on the amorphous silicon 1 does not limit the invention to the first and second films being formed above the amorphous silicon 1 in a film forming apparatus. Forming the first and second films on the amorphous silicon 1 also encompasses the formation of the first and second films below the amorphous silicon 1 in a film forming apparatus, as exemplified in, for example, Figures 8A to 8C.

[0039] Next, a fourth embodiment of a method for manufacturing a semiconductor device will be described with reference to FIGS. 9 to 17. The fourth embodiment provides a method for manufacturing a semiconductor memory device as an example of a semiconductor device. Here, an example of manufacturing a semiconductor memory device having a NAND string will be described. The NAND string includes a plurality of thin film transistors connected in series.

[0040] 9 to 17, 100 denotes a semiconductor substrate, 111, 114, 116, and 136 denote insulating films, 112 and 113 denote wiring layers, 115 denotes a gate electrode layer, 119 denotes a tunnel insulating film, 120 denotes a charge storage layer, 121 denotes a block insulating film, 135 denotes amorphous silicon, 123 denotes a core layer, 124A, 124B, and 141 denote silicide layers, 125 denotes a cap layer, 136 denotes a conductive layer, GP denotes a gap, MP denotes a memory pillar, and SLT denotes a slit.

[0041] In the state shown in FIG. 9 , the gap GP communicates with the external space via the slit SLT. The amorphous silicon 135 corresponds to the amorphous silicon 1 described above and is the target for single crystallization. The amorphous silicon 135 is exposed to the gap GP. In this state, in the first step shown in FIGS. 10 and 11 , a heat treatment involving heating is performed to form a first film 3 containing Ni as a first material so as to cover the amorphous silicon 135, thereby forming Ni silicide as the silicide 4 in contact with the amorphous silicon 135. At this time, in addition to the silicide 4 in contact with the amorphous silicon 135, a first material film 3′ in contact with the insulating film may be formed. The first material film 3′ may then be removed.

[0042] 12 and 13, a second film 6 containing Al as a second material is formed by a treatment involving heating so as to cover the silicide 4, thereby forming NiAlSi as a compound 7 composed of Si, Ni (first material), and Al (second material) so as to be in contact with the silicide 4. At this time, a second material film 8, which is a part of the second film 6, remains in the portion covering the insulating film 136 and the like.

[0043] 14, the second material film 8 on the insulating film is removed. Then, in a third step shown in Fig. 15, the silicide film 4 remaining after the second step is transformed by heat treatment into a NiAlSi film as a compound 9 composed of Si, Ni (first material), and Al (second material).

[0044] 16 and 17 , at least a part of the amorphous silicon 135 remaining after the third step is converted by heat treatment into single crystal silicon 10. The fourth embodiment is advantageous in reducing channel resistance, which is a problem in semiconductor memory devices (e.g., 3D NAND memories).

[0045] 18A and 18B are diagrams schematically illustrating a fifth embodiment of a method for manufacturing a semiconductor device, including a conversion step of converting amorphous silicon into single-crystal silicon. Matters not mentioned in the fifth embodiment may conform to the first to third embodiments. The fifth embodiment is also applicable to the fourth embodiment.

[0046] The fifth embodiment of the method for manufacturing a semiconductor device may include a conversion step of converting amorphous silicon 1 into single-crystal silicon 10. The amorphous silicon 1 may constitute a part of a substrate. The conversion step may include a first step S1′ of forming a first film 3 containing Ni as a first material so as to cover the amorphous silicon 1, a second step S2′ of forming a second film 6 containing Al as a second material so as to cover the first film 3 after the first step S1′, and a third step S3′ of converting the amorphous silicon 1 into a NiAlSi film as a compound 9 composed of Si, Ni (the first material), and Al (the second material) by heat treatment after the second step S2′.

[0047] This makes it possible to create a structure in which NiAlSi as the compound 9 is arranged so as to be in contact with the amorphous silicon 1 .

[0048] Here, instead of Ni, the first material may be Pd (palladium), Ti (titanium), Cu (copper), Pt (platinum), Co (cobalt), Mo (molybdenum), Mg (magnesium), W (tungsten), Cr (chromium), or Mn (manganese). That is, the first material may be one material selected from the group consisting of Ni, Pd, Ti, Cu, Pt, Co, Mo, Mg, W, Cr, and Mn.

[0049] As the second material, Au (gold), Sb (antimony), In (indium), Ag (silver), or Ga (gallium) may be used instead of Al. That is, the second material can be one material selected from the group consisting of Al, Au, Sb, In, Ag, and Ga.

[0050] The compound composed of Si (silicon), Ni (first material), and Al (second material) is preferably, for example, NiAlSi, NiAuSi, NiSbSi, NiInSi, NiAgSi, or NiGaSi.

[0051] The conversion step of converting the amorphous silicon 1 into single crystal silicon 10 may further include a fourth step S4' of converting at least a portion of the amorphous silicon 1 remaining after the third step S3' into single crystal silicon 10 by heat treatment. The conversion step may also include a step of removing the second compound 11 in contact with the insulating film 2 between the third step S3' and the fourth step S4'.

[0052] Through the fourth step S4', a stacked structure of amorphous silicon 1, compound 9, and single-crystal silicon 10 is formed. The fourth step S4' may include a metal-induced lateral crystallization (MILC) process. The thickness of the second film 6 formed in the second step S2' is preferably greater than the thickness of the first film 3 formed in the first step S1', but less than four times the thickness of the first film 3 formed in the first step S1'.

[0053] The invention is not limited to the above-described embodiments, and various changes and modifications can be made without departing from the spirit and scope of the invention. Accordingly, the following claims are appended to apprise the public of the scope of the invention.

[0054] 1: amorphous silicon, 2: insulating film, 3: first film (e.g., Ni film), 3': first material film (e.g., Ni film), 4: silicide (e.g., Ni silicide), 6: second film (e.g., Al film), 7: compound (e.g., NiAlSi), 8: second material film (e.g., Al film), 9: compound (e.g., NiAlSi), 10: single crystal silicon, 11: second compound (e.g., NiAl)

Claims

1. A method for manufacturing a semiconductor device including a conversion step of converting amorphous silicon into single crystal silicon, the conversion step including: a first step of forming a first film including a first material so as to cover the amorphous silicon by a treatment involving heating, thereby forming a silicide in contact with the amorphous silicon; a second step of forming a compound consisting of Si, the first material, and the second material in contact with the silicide by a treatment involving heating after the first step, thereby forming a second film including a second material so as to cover the silicide by a treatment involving heating; and a third step of changing the silicide remaining after the second step into the compound by a heat treatment, wherein the first material is one material selected from the group consisting of Ni, Pd, Ti, Cu, Pt, Co, Mo, Mg, W, Cr, and Mn, and the second material is one material selected from the group consisting of Al, Au, Sb, In, Ag, and Ga.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the conversion step further includes a fourth step of converting at least a portion of the amorphous silicon remaining after the third step into single crystal silicon by heat treatment.

3. The method for manufacturing a semiconductor device according to claim 2, characterized in that a laminated structure of the amorphous silicon, the compound and the single crystal silicon is formed through the fourth step.

4. The method for manufacturing a semiconductor device according to claim 3, wherein the fourth step includes a MILC (Metal Induced Lateral Crystallization) process.

5. A method for manufacturing a semiconductor element according to any one of claims 1 to 4, characterized in that the thickness of the second film formed in the second step is greater than the thickness of the first film formed in the first step and is less than four times the thickness of the first film formed in the first step.

6. The method for manufacturing a semiconductor device according to any one of claims 1 to 5, characterized in that the second material is Al.

7. The method for manufacturing a semiconductor device according to any one of claims 1 to 5, characterized in that the first material is Ni.

8. The method for manufacturing a semiconductor element according to any one of claims 1 to 5, characterized in that the first material is Ni and the second material is Al.

9. A method for manufacturing a semiconductor element according to any one of claims 1 to 4, characterized in that in the first step, a first film containing the first material is formed so as to cover the insulating film as well as the amorphous silicon by a treatment involving heating, thereby forming a first material film in contact with the insulating film as well as the silicide in contact with the amorphous silicon.

10. The method for manufacturing a semiconductor element according to claim 9, wherein the conversion step further includes a step of removing the first material film in contact with the insulating film between the first step and the second step.

11. The method for manufacturing a semiconductor element as described in claim 10, characterized in that in the second step, a second film containing the first material is formed to cover the insulating film in addition to the silicide by a treatment involving heating, thereby forming a second material film in contact with the insulating film in addition to the compound in contact with the silicide.

12. The method for manufacturing a semiconductor element according to claim 11, wherein the conversion step further includes a step of removing the second material film in contact with the insulating film between the second step and the third step.

13. The method for manufacturing a semiconductor element as described in claim 9, characterized in that in the second step, a second film containing a second material is formed to cover the silicide and the first material film by a treatment involving heating, thereby obtaining, in addition to the compound in contact with the silicide, a second compound of the first material and the second material in contact with the insulating film.

14. The method for manufacturing a semiconductor device according to claim 13, characterized in that the conversion step includes a step of removing the second compound in contact with the insulating film between the second step and the third step.

15. The method for manufacturing a semiconductor device according to claim 13, wherein the conversion step further includes a step of removing the second compound in contact with the insulating film after the third step.

16. A semiconductor device comprising single crystal silicon produced by the method for producing a semiconductor device according to any one of claims 1 to 15.

17. The semiconductor device according to claim 16, wherein the single crystal silicon constitutes a part of a thin film transistor or a semiconductor memory device.

18. A method for manufacturing a semiconductor device, including a conversion step of converting amorphous silicon into single crystal silicon, the conversion step including: a first step of forming a first film containing a first material so as to cover the amorphous silicon; a second step of forming a second film containing a second material so as to cover the first film after the first step; and a third step of forming a compound containing Si, the first material, and the second material by heat treatment after the second step, wherein the first material is one material selected from the group consisting of Ni, Pd, Ti, Cu, Pt, Co, Mo, Mg, W, Cr, and Mn, and the second material is one material selected from the group consisting of Al, Au, Sb, In, Ag, and Ga.

19. The method for manufacturing a semiconductor device according to claim 18, wherein the conversion step further includes a fourth step of converting at least a portion of the amorphous silicon remaining after the third step into single crystal silicon by heat treatment.

20. The method for manufacturing a semiconductor device according to claim 19, wherein a laminated structure of the amorphous silicon, the compound and the single crystal silicon is formed through the fourth step.

21. The method for manufacturing a semiconductor device according to claim 20, wherein the fourth step includes a MILC (Metal Induced Lateral Crystallization) process.

22. A method for manufacturing a semiconductor element according to any one of claims 18 to 21, characterized in that the thickness of the second film formed in the second step is greater than the thickness of the first film formed in the first step and is less than four times the thickness of the first film formed in the first step.

23. The method for manufacturing a semiconductor device according to any one of claims 18 to 22, characterized in that the second material is Al.

24. The method for manufacturing a semiconductor device according to any one of claims 18 to 22, characterized in that the first material is Ni.

25. The method for manufacturing a semiconductor device according to any one of claims 18 to 22, characterized in that the first material is Ni and the second material is Al.

26. A semiconductor device comprising single crystal silicon produced by the method for producing a semiconductor device according to any one of claims 18 to 25.

27. The semiconductor device according to claim 26, wherein the single crystal silicon constitutes a part of a thin film transistor or a semiconductor memory device.

28. A semiconductor element including a laminated structure of amorphous silicon, a compound, and single crystal silicon, wherein the compound is a compound of Si, a first material, and a second material, the first material is one material selected from the group consisting of Ni, Pd, Ti, Cu, Pt, Co, Mo, Mg, W, Cr, and Mn, and the second material is one material selected from the group consisting of Al, Au, Sb, In, Ag, and Ga.

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