Member provided with power supply terminal component

Abstract

This member is provided with a metal base material, a power supply terminal component incorporated in the base material, and a joint part in which the base material and the power supply terminal component are joined. The power supply terminal component includes: a conductive power supply member; an insulator made of an insulating material fixed to the outside of the power supply member by brazing or glass bonding; and a metal sleeve fixed to the outside of the insulator by brazing or glass bonding. In the joint part, the base material and the sleeve are metallurgically joined to each other.

Description

A member equipped with a power supply terminal part

[0001] The present invention relates to a member including a power supply terminal component. This application claims priority to Japanese Application No. 2023-120054, filed on July 24, 2023, and incorporates by reference all of the contents of said Japanese application.

[0002] Vacuum processing equipment is used to perform surface treatment on workpieces, such as silicon wafers and glass substrates, in various processes, including semiconductor manufacturing and liquid crystal display panel manufacturing. Examples of vacuum processing equipment include reactive ion etching equipment and plasma etching equipment. These vacuum processing equipment are equipped with an electrostatic chuck for supporting the workpiece. The electrostatic chuck includes, for example, an attraction electrode and, if necessary, a heating element. The workpiece is fixed to the mounting table by electrostatic attraction by applying a voltage to the attraction electrode. The temperature of the workpiece is also adjusted by applying a voltage to the heating element. Therefore, the electrostatic chuck requires that conductive members, such as the attraction electrode and heating element, within the electrostatic chuck be connected to a power source. The various conductive members are connected to the power source via power supply terminal components. The power supply terminal components are, for example, incorporated into the substrate (lower electrode).

[0003] When performing surface treatment on a workpiece using a vacuum processing device, the side of the electrostatic chuck on which the workpiece is mounted is typically in a vacuum state, while the side opposite the side on which the workpiece is mounted is exposed to the atmosphere. Therefore, excellent airtightness is required for fastening the components of the power supply terminal part and for fastening the power supply terminal part to the substrate. From this perspective, conventional power supply terminal parts have used adhesives to fasten the components and the substrate.

[0004] When performing surface treatment of a workpiece using a vacuum treatment apparatus, it is necessary to increase the treatment speed and improve manufacturing efficiency by setting the treatment conditions at high temperatures, in other words, by using an electrostatic chuck in the vacuum treatment apparatus in a high-temperature atmosphere. However, when an adhesive is used to fix each component and to fix the component to the substrate, as in conventional power supply terminal components, the adhesive is exposed to high temperatures, which can cause problems such as unstable fixation of each component and to the substrate and reduced airtightness (e.g.,

[0005] of Patent Document 1).

[0005] Patent Document 1 proposes that, in order to use an electrostatic chuck equipped with a power supply terminal component in a high-temperature environment, the components of the power supply terminal component are fixed to each other by brazing, diffusion bonding, or soldering, and bolts and seals are used to fix the power supply terminal component to the substrate. Patent Document 1 states that by adopting such a method, the fixation of the components of the power supply terminal component and the fixation of the power supply terminal component to the substrate do not become unstable even in a temperature range of 200°C or higher, and good airtightness within the vacuum processing apparatus is maintained.

[0006] Japanese Patent Application Laid-Open No. 2004-311522

[0007] In recent years, in order to further improve manufacturing efficiency, there has been a demand for vacuum processing equipment to be operated at temperatures higher than 200°C, i.e., 400°C or higher. However, when the electrostatic chuck described in Patent Document 1, which uses bolts and seals to secure a power supply terminal component to a substrate, is used at temperatures higher than 400°C, the bolts expand due to heat and then contract upon cooling. This can create gaps between the bolts and the power supply terminal component, and between the bolts and the substrate, making the fixation between the substrate and the power supply terminal component unstable. Furthermore, the seals of the electrostatic chuck described in Patent Document 1 cannot withstand temperatures higher than 400°C and deteriorate prematurely. As a result, airtightness between the power supply terminal component and the substrate cannot be maintained, potentially making it difficult to evacuate the vacuum processing equipment. To avoid these problems, frequent maintenance of the bolts and seals is required.

[0008] The present invention has been made in consideration of the above-described circumstances, and aims to provide a member equipped with a power supply terminal component for use in vacuum processing equipment, etc., which can be suitably used even at high temperatures.

[0009] (1) A component according to one aspect of the present invention comprises: a metal substrate; a power supply terminal component incorporated in the substrate; and a joint at which the substrate and the power supply terminal component are joined; the power supply terminal component includes: a conductive power supply member; an insulator made of an insulating material fixed to the outside of the power supply member by brazing or glass bonding; and a metal sleeve fixed to the outside of the insulator by brazing or glass bonding; and the joint at which the substrate and the sleeve are metallurgically joined.

[0010] According to the above-described member, the constituent members of the power supply terminal part (the power supply member, the insulator, and the sleeve) are fixed by brazing or glass bonding, and the substrate and the sleeve of the power supply terminal part are provided with a metallurgically bonded joint. This ensures airtightness over a long period of time, even when used under high-temperature conditions of 400°C or higher. Furthermore, the frequency of maintenance such as part replacement can be reduced during long-term use. Furthermore, because both the substrate and the sleeve are made of metal, this is suitable for forming a metallurgically bonded joint. Even if thermal strain occurs in the sleeve due to the heat effect when the insulator and the sleeve are fixed by brazing or glass bonding, the sleeve is smaller than the substrate, so it is easy to process the sleeve to eliminate the strain (such as by cutting) or to replace the sleeve itself.

[0011] (2) In the member described in (1), the substrate and the sleeve are preferably made of the same material. In this case, metallurgical bonding between the substrate and the sleeve is further facilitated. Furthermore, since there is almost no difference in thermal expansion between the substrate and the sleeve, distortion due to the difference in thermal expansion is unlikely to occur in the substrate and the sleeve.

[0012] (3) In the member of (1) or (2), the joint is preferably formed by laser welding, electron beam welding, friction stir welding (FSW), laser brazing, or laser cladding. In this case, the joint is formed by a joining method that has little thermal effect on the base material, and therefore distortion of the base material is unlikely to occur.

[0013] (4) It is preferable that any of the members (1) to (3) above has an insulating coating covering the surface of the joint. (5) It is preferable that any of the members (1) to (4) above is an electrostatic chuck. (6) It is preferable that any of the members (1) to (4) above is a heater member.

[0014] The member according to one aspect of the present invention incorporates the power supply terminal component as described above, and is therefore suitable as a member to be used in a high-temperature environment.

[0015] FIG. 1 is a schematic diagram of a plasma etching apparatus. FIG. 2 is a diagram showing an electrostatic chuck according to an embodiment of the present invention. FIG. 3 is a partial enlarged view of FIG. 2, mainly showing a power supply terminal component. FIG. 4 is a diagram showing a part of a manufacturing process of an electrostatic chuck. FIG. 5 is a partial enlarged view showing another example of an electrostatic chuck. FIG. 6 is a partial enlarged view showing another example of an electrostatic chuck. FIG. 7 is a partial enlarged view showing another example of an electrostatic chuck.

[0016] Hereinafter, an embodiment of the present invention will be described. A member according to an embodiment of the present invention includes a power supply terminal component. Examples of such members include an electrostatic chuck and a heater member. The electrostatic chuck and heater member are installed in a vacuum processing apparatus such as a plasma etching apparatus or a reactive ion etching apparatus.

[0017] First Embodiment Here, a plasma etching apparatus provided with an electrostatic chuck according to an embodiment of the present invention will be described with reference to the drawings. Fig. 1 is a schematic diagram of a plasma etching apparatus 10. Fig. 2 is a diagram showing an electrostatic chuck according to an embodiment of the present invention. Fig. 3 is a partially enlarged view of Fig. 2, mainly showing a power supply terminal component.

[0018] The plasma etching apparatus 10 includes a processing vessel 11, an electrostatic chuck 20, and an upper electrode 40. The processing vessel 11 has a substantially cylindrical shape. The processing vessel 11 is made of, for example, aluminum. The processing vessel 11 is grounded.

[0019] An electrostatic chuck 20 is provided at the bottom of the processing vessel 11. The electrostatic chuck 20 is a component that holds a silicon wafer (not shown) (hereinafter simply referred to as a wafer) on its upper surface. The wafer is loaded into the processing vessel 11 using a transfer arm (not shown), subjected to plasma etching processing, and then unloaded from the processing vessel 11. For this purpose, the processing vessel 11 is provided with a loading / unloading port 13.

[0020] The electrostatic chuck 20 includes an insulating layer 23 provided on a substrate 21 (lower electrode), and an attraction electrode 25 provided on the insulating layer 23. A dielectric layer 24 is provided on the attraction electrode 25. The substrate 21 has a generally circular disk shape with a step on a portion of its outer circumferential surface. A power supply terminal component 30 is incorporated into the substrate 21. The substrate 21 is connected to a first high-frequency power supply 51 via a matcher 53. The substrate 21 is also connected to a second high-frequency power supply 52 via a matcher 54. The substrate 21 serves as a base for the attraction electrode 25 and other components, and also functions as a lower electrode within the processing device. Therefore, the substrate 21 is made of a conductive material. The conductive material may be any material that can be metallurgically joined. Examples of the conductive material include iron-based materials, nickel-based materials, titanium-based materials, cobalt-based materials, and Invar (iron-36 nickel).

[0021] The attraction electrode 25 is provided on the base material 21 so as to be sandwiched between the insulating layer 23 and the dielectric layer 24. The attraction electrode 25 is a conductive layer. The attraction electrode 25 is connected to a DC power supply 26 via a power supply terminal component 30 and a switch 27. When the switch 27 is turned on, the attraction electrode 25 generates an electrostatic force such as Coulomb force, thereby enabling electrostatic attraction of the wafer. In other words, the electrostatic chuck 20 can hold the wafer by electrostatic force.

[0022] Examples of materials for the attraction electrode 25 include a single metal element selected from Mo, W, Ta, Cr, Ti, Al, Si, Ni, Nb, Fe, Cu, and Ag, an alloy containing one or more of these metal elements, a conductive compound containing one or more of these metal elements, or a mixture thereof.

[0023] Examples of methods for forming the chucking electrode 25 include thermal spraying, PVD (Physical Vapor Deposition), and CVD (Chemical Vapor Deposition). The thickness of the chucking electrode 25 is preferably 2 to 1000 μm. If it is less than 2 μm, there is a risk that the film formation will be unstable. Furthermore, since there is no functional difference depending on the thickness of the chucking electrode 25, from an economical point of view, the thickness of the chucking electrode 25 is preferably 1000 μm or less. The thickness of the chucking electrode 25 is more preferably 5 to 500 μm, and even more preferably 10 to 100 μm.

[0024] Examples of methods for forming the insulating layer 23 and the dielectric layer 24 include thermal spraying, physical vapor deposition (PVD), and chemical vapor deposition (CVD). These methods have the advantage of being able to form thin insulating films without using adhesives. As will be described later, in the electrostatic chuck 20, the substrate 21 and the sleeve 35 are metallurgically bonded, and therefore, the above-described methods make it possible to form high-quality insulating films.

[0025] Examples of materials for the insulating layer 23 and the dielectric layer 24 include oxide ceramics, fluoride ceramics, or oxyfluoride ceramics containing at least one element selected from the group consisting of rare earth elements, Mg, Al, Si, Ca, Ti, Ta, and Zr, or mixtures containing these.

[0026] The thickness of the insulating layer 23 is preferably 50 to 2000 μm, and the thickness of the dielectric layer 24 is preferably 50 to 1000 μm. By changing the thickness of the insulating layer 23, it is possible to adjust the heat removal efficiency, and by changing the thickness of the dielectric layer 24, it is possible to adjust the chucking force. The thickness of the insulating layer 23 is more preferably 80 to 1000 μm, and even more preferably 100 to 500 μm. The thickness of the dielectric layer 24 is more preferably 80 to 500 μm, and even more preferably 100 to 300 μm.

[0027] The power supply terminal component 30 includes a power supply member 31, an insulator 33, and a sleeve 35. The power supply member 31 is a substantially cylindrical member and is conductive. The power supply member 31 has a small diameter portion 31A with a small diameter and a large diameter portion 31B with a large diameter. In this case, axial movement can be restricted when combining with the insulator 33, making positioning easy. The power supply member 31 may be made of any material that is conductive, such as a metal element selected from Ti, Al, Fe, Si, Ni, Ta, W, Cu, Ag, Au, and Mo, a conductive compound containing one or more of these metal elements, or a mixture containing these.

[0028] The insulator 33 is a substantially cylindrical member fixed to the outside of the power supply member 31. The insulator 33 is made of an insulating material. The insulator 33 is provided so that the power supply member 31 does not come into contact with the sleeve 35 and the substrate 21. Like the power supply member 31, the insulator 33 has a small diameter portion 33A and a large diameter portion 33B. In this case, axial movement can be limited when combining with the sleeve 35, making positioning easier. Examples of the insulating material include oxide ceramics, nitride ceramics, carbide ceramics, or mixtures containing any of these elements, each containing at least one element selected from the group consisting of rare earth elements, Mg, Al, Si, Ca, Ti, Ta, and Zr.

[0029] The insulator 33 is fixed to the outside of the power supply member 31 by brazing or glass bonding. In the present invention, glass bonding refers to a technique of joining components together by melting and solidifying a glass material. Examples of brazing materials used for the brazing include silver brazing, copper brazing, nickel brazing, and gold brazing. Examples of glass materials used for the glass bonding include alkali-free glass, soda-lime-free glass, and borosilicate glass.

[0030] The sleeve 35 is a substantially cylindrical member fixed to the outside of the insulator 33. The sleeve 35 is made of a metal material. The sleeve 35 is preferably made of the same material as the base material 21. By making the base material 21 and the sleeve 35 of the same material, the base material 21 and the sleeve 35 can be easily metallurgically joined. Furthermore, when the base material 21 and the sleeve 35 are made of the same material, there is almost no difference in thermal expansion between the base material 21 and the sleeve 35, and distortion due to the difference in thermal expansion is unlikely to occur.

[0031] The sleeve 35 is fixed to the outside of the insulator 33 by brazing or glass bonding. Examples of brazing materials used for the brazing include silver brazing, copper brazing, nickel brazing, and gold brazing. Examples of glass materials used for the glass bonding include alkali-free glass, soda-lime-free glass, and borosilicate glass.

[0032] The method for fixing the insulator 33 to the power supply member 31 and the method for fixing the sleeve 35 to the insulator 33 may be the same or different, but it is preferable that they are the same.

[0033] In this way, when the components of the power supply terminal part 30 are fixed together by brazing or glass bonding, the power supply terminal part 30 not only has good airtightness but also good heat resistance. Specifically, the upper limit of the usable temperature when fixed by brazing is 850°C, and the upper limit of the usable temperature when fixed by glass bonding is 700°C.

[0034] The electrostatic chuck 20 includes a joint 29 where the base material 21 and the power supply terminal part 30 are joined together. The joint 29 is located at the boundary between the upper surface of the base material 21 and the upper surface of the sleeve 35. The base material 21 and the sleeve 35 are metallurgically joined together at the joint 29. This gives the joint 29 high heat resistance and excellent airtightness and adhesion between the base material 21 and the sleeve 35.

[0035] The joint 29 is preferably formed by laser welding, electron beam welding, friction stir welding (FSW), laser brazing, or laser cladding. In this case, the power supply terminal component 30 is joined to the base material 21 by a joining method with little thermal influence, so that the occurrence of distortion in the base material 21 due to thermal influence can be suppressed. In particular, when the joint 29 is joined by laser cladding, there is an additional advantage that recesses are less likely to be formed in the joint 29 because the base material 21 and the sleeve 35 are joined while material is being supplied.

[0036] Since the electrostatic chuck 20 has the joint 29 configured as described above, no gap or the like is formed between the substrate 21 and the sleeve 35, and therefore a good coating (insulating layer 23) is formed across the upper surface of the substrate 21, the upper surface of the sleeve 35, and the upper surface of the joint 29. In the electrostatic chuck 20, the difference in level between the substrate 21 and the sleeve 35 is preferably 1 mm or less. In other words, the difference in height between the upper surface 21 a of the substrate 21 and the upper surface 35 a of the sleeve 35 is preferably 1 mm or less. In this case, it is particularly suitable to form the insulating layer 23 by thermal spraying, PVD, or CVD.

[0037] Furthermore, in the electrostatic chuck 20, the base material 21 and the sleeve 35 are metallurgically bonded together, so that the base material 21 and the sleeve 35 are fixed together without misalignment even in a high-temperature environment, which makes it difficult for cracks to occur in the insulating layer 23. Therefore, the plasma etching apparatus 10 ensures airtightness even when used in a high-temperature environment in which the electrostatic chuck 20 reaches a temperature of 400° C. or higher.

[0038] In contrast, when the substrate and sleeve are joined using an adhesive, the adhesive is likely to be exposed between the substrate and sleeve. When the adhesive is exposed, it is difficult to form a coating on the adhesive by thermal spraying, PVD, or CVD. Therefore, when attempting to form a coating to cover the substrate and sleeve, poor coating formation may occur. Furthermore, when the adhesive expands due to thermal effects, misalignment may occur between the substrate and sleeve, which may result in cracks in the coating formed to cover the substrate and sleeve.

[0039] Furthermore, when the substrate and sleeve are joined using a bolt, a gap may occur between the substrate and the sleeve, and when a coating is formed to cover the substrate and the sleeve, poor coating may occur in the gap. Furthermore, when the bolt repeatedly expands and contracts due to thermal cycling, a gap may occur between the bolt and the sleeve or between the bolt and the substrate. When such a gap occurs, the fixation between the substrate and the sleeve becomes unstable, resulting in misalignment between the substrate and the sleeve, which may cause cracks in the coating formed to cover the substrate and the sleeve.

[0040] A heater (heat generating element) (not shown) may be provided inside the electrostatic chuck 20. In this case, the temperature of the electrostatic chuck 20 is adjusted by supplying power to the heater from a heater power supply, thereby adjusting the temperature of the wafer held by the electrostatic chuck 20. The heater may be connected to the heater power supply via the power supply terminal component having the above-described configuration.

[0041] A coolant flow path (not shown) may be provided inside the electrostatic chuck 20. By providing such a coolant flow path and controlling the temperature of the coolant circulating through the coolant flow path, the temperature of the wafer supported by the electrostatic chuck can be controlled.

[0042] The electrostatic chuck 20 may be provided with a gas supply line that penetrates the electrostatic chuck 20 in a thickness direction. The gas supply line may be configured to be able to supply a heat transfer gas, such as He gas, between the upper surface of the electrostatic chuck 20 and the back surface of the wafer.

[0043] The plasma etching apparatus 10 includes an upper electrode 40. The upper electrode 40 is disposed above the electrostatic chuck 20 so as to face the electrostatic chuck 20. A processing space 17 for performing plasma processing on a wafer is provided between the electrostatic chuck 20 and the upper electrode 40.

[0044] The upper electrode 40 is supported on the upper part of the processing chamber 11 via an insulating member 15. The upper electrode 40 has an electrode plate 42 and an electrode support 44. The electrode plate 42 faces the processing space 17. The electrode plate 42 has a plurality of gas discharge holes 46c that form a gas flow path 46. In the plasma etching apparatus 10, a plasma generating gas is supplied to the processing space 17 through the gas discharge holes 46c.

[0045] The electrode support 44 is a component that supports the electrode plate 42. The electrode plate 42 is detachably attached to the electrode support 44. The electrode plate 42 is made of a conductive material such as aluminum.

[0046] The upper electrode 40 has a gas flow path 46 therein through which a plasma generation gas flows. The gas flow path 46 includes a gas diffusion chamber 46a provided in the electrode support 44 and a plurality of gas flow holes 46b extending from the gas diffusion chamber 46a to the gas discharge holes 46c. The gas diffusion chamber 46a is connected to an external gas supply pipe 48.

[0047] The plasma etching apparatus 10 includes a first high frequency power supply 51 and a second high frequency power supply 52. ​​The first high frequency power supply 51 is connected to the substrate 21 via a matcher 53 and is a power supply that generates a first high frequency power for generating plasma. The first high frequency power supply 51 may also be connected to the upper electrode 40 via a matcher. The second high frequency power supply 52 is connected to the substrate 21 via a matcher 54 and is a power supply that generates a second high frequency power, i.e., a high frequency bias power, for attracting ions into the wafer.

[0048] In this plasma etching apparatus 10, a plasma generating gas is supplied from a gas supply device (not shown) through a gas supply pipe 48 and a gas flow path 46 to the processing space 17. At this time, the processing space 17 is depressurized to a predetermined pressure by an exhaust device (not shown). In addition, a high frequency electric field generated by high frequency power supplied by a first high frequency power supply 51 generates plasma in the processing chamber 11. In the plasma etching apparatus 10, the generated plasma is used to etch a wafer.

[0049] Next, a method for manufacturing the electrostatic chuck 20 will be described in order of steps. FIG. 4 is a diagram showing part of the manufacturing process of the electrostatic chuck. (1) Manufacturing the power supply terminal component 30. A power supply member 31, an insulator 33, and a sleeve 35 each processed into a predetermined shape are prepared. The insulator 33 is fixed to the outside of the power supply member 31 by brazing or glass bonding, and the sleeve 35 is further fixed to the outside of the insulator 33 by brazing or glass bonding. In this way, the power supply terminal component 30 is manufactured.

[0050] (2) A substrate (lower electrode) 21 is prepared. A metal plate is processed into a predetermined shape. In this process, a through hole 22 for incorporating the power supply terminal component 30 is formed.

[0051] (3) As shown in Fig. 4, the power supply terminal component 30 is fitted into the through-hole 22 provided in the base material 21. At this time, it is preferable to fit the power supply terminal component 30 into the base material 21 so that the step between the board 21 and the sleeve 35 of the power supply terminal component 30 is 1 mm or less.

[0052] (4) Next, a joint 29 is formed along the boundary between the substrate 21 and the sleeve 35 of the power supply terminal part 30, and the power supply terminal part 30 is fixed to the substrate 21. The joint 29 is formed by the metallurgical method described above.

[0053] (5) The insulating layer 23 is formed so as to cover the substrate 21, the insulator 33 and the sleeve 35 of the power supply terminal part 30, and the joint 29. As described above, the insulating layer 23 is preferably formed by thermal spraying, PVD, or CVD.

[0054] (6) The attraction electrode 25 is formed on the insulating layer 23. As described above, the attraction electrode 25 may be formed by thermal spraying, PVD, CVD, or the like.

[0055] (7) The dielectric layer 24 is formed so as to cover the attraction electrode 25. The dielectric layer 24 can be formed, for example, by the same method as that for the insulating layer 23. The method for forming the insulating layer 23 and the method for forming the dielectric layer 24 may be the same or different. By undergoing these steps, the electrostatic chuck 20 can be manufactured.

[0056] In a member including a power feed terminal component, such as an electrostatic chuck according to an embodiment of the present invention, a power feed terminal component 30 is incorporated into a substrate 21. The relationship between the substrate 21 and the power feed terminal component 30 is not limited to that of the first embodiment. In the embodiments of the present invention, the relationship between the substrate and the power feed terminal component may be that shown in the second to fourth embodiments.

[0057] Second Embodiment Fig. 5 is a partially enlarged view of an electrostatic chuck 120 according to a second embodiment, illustrating the relationship between a substrate 121 and a power supply terminal component 130. Components constituting the electrostatic chuck other than the substrate and the power supply terminal component are omitted from Fig. 5 (the same applies to Figs. 6 and 7). The electrostatic chuck 120 according to the second embodiment differs from the electrostatic chuck 20 according to the first embodiment in the shape of a through hole 122 provided in the substrate 121, into which a power supply terminal component 130 is fitted. The configuration of the power supply terminal component 130 is similar to that of the power supply terminal component 30 according to the first embodiment, and includes a power supply member 131, an insulator 133 fixed to the outside of the power supply member 131, and a sleeve 135 fixed to the outside of the insulator 133.

[0058] In the electrostatic chuck 120 of the second embodiment, the through hole 122 formed in the base material 121 is sized so that, when the power supply terminal component 130 is fitted therein, a gap is formed between a portion of the wall surface 122a of the through hole 122 and a portion of the outer circumferential surface 133a of the insulator 133. Here, the through hole 122 is sized so that a gap is formed on the lower surface side of the base material 121. Meanwhile, a metallurgically joined joint 129 is formed on the upper surface side (upper side in FIG. 5 ) of the base material 121. Therefore, the upper surface side of the base material 121 is configured so that no gap is formed between the base material 121 and the power supply terminal component 30. In embodiments of the present invention, the power supply terminal component 130 may be incorporated into the base material 121 in this manner.

[0059] In the electrostatic chuck 20 of the first embodiment and the electrostatic chuck 120 of the second embodiment, a joint 29, 129 is formed on the upper surface of the substrate 21, 121 (the side on which the attraction electrode is formed). The joint 29, 129 is a metallurgically bonded joint. Therefore, a good coating can be formed on the joint 29, 129 by thermal spraying, PVD, CVD, or the like. Therefore, the configurations of the electrostatic chuck 20 of the first embodiment and the electrostatic chuck 120 of the second embodiment are suitable for forming a coating on the upper surface of the substrate 21, 121 that covers the substrate 21, 121, the sleeve 35, 135, and the joint 29, 129.

[0060] 6 is a partially enlarged view of an electrostatic chuck 220 according to a third embodiment, illustrating the relationship between a base material 221 and a power supply terminal component 230. The electrostatic chuck 220 according to the third embodiment differs from the electrostatic chuck 20 of the first embodiment in that the power supply terminal component 230 is mounted on the base material 221 in an inverted state. The configuration of the power supply terminal component 230 is similar to that of the power supply terminal component 30 of the first embodiment, and includes a power supply member 231, an insulator 233 fixed to the outside of the power supply member 231, and a sleeve 235 fixed to the outside of the insulator 233.

[0061] In the electrostatic chuck 220 according to the third embodiment, the base material 221 and the sleeve 235 are metallurgically joined together on the lower surface side of the base material 221 (the lower side in FIG. 6 ) to form a joint 229. In the embodiment of the present invention, the power supply terminal component 230 may be incorporated into the base material 221 in this manner.

[0062] 7 is a partially enlarged view of an electrostatic chuck 320 according to a fourth embodiment, illustrating the relationship between a base material 321 and a power supply terminal component 330. The electrostatic chuck 320 according to the fourth embodiment differs from the electrostatic chuck 220 according to the third embodiment in the shape of a through hole provided in the base material 321 for incorporating the power supply terminal component 330. The configuration of the power supply terminal component 330 is similar to that of the power supply terminal component 30 according to the first embodiment, and includes a power supply member 331, an insulator 333 fixed to the outside of the power supply member 331, and a sleeve 335 fixed to the outside of the insulator 333.

[0063] In the fourth embodiment, a through hole for fitting the power supply terminal component 330 is formed in the base material 321 so that a recess 322 is provided on the lower surface of the base material 321 when the power supply terminal component 330 is incorporated into the base material 321. In this electrostatic chuck 320, the base material 321 and the sleeve 335 are metallurgically joined at a bottom 322a of the recess 322 to form a joint 329. In embodiments of the present invention, the power supply terminal component 330 may be incorporated into the base material 321 in this manner.

[0064] Other Embodiments The member according to the embodiment of the present invention is not limited to the electrostatic chuck 20 and may be, for example, a heater member. A specific example of the heater member is a member having a configuration substantially similar to that of the electrostatic chuck 20 shown in FIG. 2 , in which a heating element is provided instead of the attraction electrode 25.

[0065] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The scope of the present invention is defined by the claims, and it is intended to include all modifications within the meaning and scope of the claims.

[0066] A member including a power supply terminal component according to one aspect of the present invention can be suitably used as an electrostatic chuck, a heater member, or the like.

[0067] REFERENCE SIGNS LIST 10 Plasma etching apparatus 11 Processing vessel 13 Loading / unloading port 15 Insulating member 17 Processing space 20, 120, 220, 320 Electrostatic chuck 21, 121, 221, 321 Base material (lower electrode) 22, 122 Through hole 23 Insulating layer 24 Dielectric layer 25 Adsorption electrode 26 DC power supply 27 Switch 29, 129, 229, 329 Joint 30, 130, 230, 330 Power supply terminal part 31, 131, 231, 331 Power supply member 31A Small diameter part 31B Large diameter part 33, 133, 233, 333 Insulator 33A Small diameter part 33B Large diameter part 35, 135, 235, 335 Sleeve 40 Upper electrode 42 Electrode plate 44 Electrode support 46 Gas flow path 46a Gas diffusion chamber 46b Gas flow hole 46c Gas discharge hole 48 Gas supply pipe 51 First high frequency power source 52 Second high frequency power source 53, 54 Matching box 322 Recess 322a Bottom

Claims

1. A component comprising: a metallic substrate; a power supply terminal component incorporated into the substrate; and a joint at which the substrate and the power supply terminal component are joined, wherein the power supply terminal component includes: a conductive power supply member; an insulator made of an insulating material fixed to the outside of the power supply member by brazing or glass bonding; and a metallic sleeve fixed to the outside of the insulator by brazing or glass bonding, and the joint is formed by the substrate and the sleeve being metallurgically joined together.

2. The member of claim 1, wherein said substrate and said sleeve are made of the same material.

3. The member of claim 1, wherein the joint is formed by laser welding, electron beam welding, friction stir welding, laser brazing, or laser cladding.

4. The member according to claim 1, further comprising an insulating coating covering the surface of said joint.

5. The member according to any one of claims 1 to 4, which is an electrostatic chuck.

6. A member according to any one of claims 1 to 4, which is a heater member.

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