Member for semiconductor manufacturing device, semiconductor manufacturing device, and method for manufacturing member for semiconductor manufacturing device

Abstract

This member for a semiconductor manufacturing device includes a pair of ceramic plates, and an internal electrode sandwiched between the pair of ceramic plates. The ceramic plates each include an insulating material and a first electroconductive material. The internal electrode contains, as materials, a second electroconductive material and an element included in the first electroconductive material. Diffusion layers containing a higher amount of the aforementioned element than the interior of the internal electrode are formed on portions of the internal electrode that are in contact with the ceramic plates.

Description

Semiconductor manufacturing equipment component, semiconductor manufacturing equipment, and method for manufacturing semiconductor manufacturing equipment component

[0001] The present invention relates to a semiconductor manufacturing equipment member, a semiconductor manufacturing equipment, and a method for manufacturing a semiconductor manufacturing equipment member. This application claims priority based on Japanese Patent Application No. 2023-123668, filed on July 28, 2023, the contents of which are incorporated herein by reference.

[0002] Semiconductor manufacturing equipment that performs plasma etching uses an electrostatic chuck device that can easily hold a plate-shaped sample (wafer). The electrostatic chuck device includes a base body having one main surface serving as a mounting surface on which a wafer is placed, and an electrostatic attraction electrode that generates an electrostatic force (Coulomb force) between the base body and the wafer placed on the mounting surface.

[0003] One known example of the electrostatic chuck device described above is one that uses a metal plate as the electrode material. In such a configuration, peeling easily occurs between the base body made of a ceramic sintered body and the electrostatic attraction electrode made of a metal. To address this issue, an electrostatic chuck device is known that uses a perforated metal as the electrode material (see, for example, Patent Document 1). When a perforated metal electrode is used, the ceramic material of the base sinters through the holes in the perforated metal, thereby preventing peeling.

[0004] Patent No. 6509138

[0005] However, the configuration of Patent Document 1 described above had the problem that the plasma generated in the semiconductor manufacturing equipment was difficult to make uniform due to the difference in configuration between areas where electrodes exist (areas where there are no punched holes) and areas where electrodes do not exist (areas where there are punched holes).

[0006] In addition to the electrostatic attraction electrode, some electrostatic chuck devices are known to have a plasma control electrode for passing high-frequency power therethrough to control the linearity of ions and radicals from plasma, and a heater electrode for heating the plate-like sample by passing current through the electrode. While the configuration of Patent Document 1 lists the problems related to the electrostatic attraction electrode, the problems resulting from interfacial peeling between the ceramic sintered body and the metal plate can also occur with the plasma control electrode and the heater electrode.

[0007] Similarly, the above-described problem is not limited to an electrostatic chuck member of an electrostatic chuck device, but may also occur in a CVD (Chemical Vapor Deposition) device in which a high-frequency current is applied to an internal electrode. Hereinafter, in this specification, electrostatic chuck members and CVD device members will be collectively referred to as "semiconductor manufacturing equipment members."

[0008] The present invention has been made in view of the above circumstances, and has an object to provide a semiconductor manufacturing equipment member in which peeling between the base and the internal electrode is suppressed. It is also an object of the present invention to provide a semiconductor manufacturing equipment having such a semiconductor manufacturing equipment member. It is also an object of the present invention to provide a method for manufacturing such a semiconductor manufacturing equipment member that enables easy manufacture of such a semiconductor manufacturing equipment member.

[0009] In order to solve the above problems, one aspect of the present invention includes the following aspects.

[0010] A first aspect of the present invention is the following semiconductor manufacturing equipment member: [1] A semiconductor manufacturing equipment member comprising a pair of ceramic plates and an internal electrode sandwiched between the pair of ceramic plates, the ceramic plates including an insulating material and a first conductive material, the internal electrode being made of a second conductive material and an element contained in the first conductive material, and a diffusion layer having a higher content of the element than the inside of the internal electrode is formed in a portion of the internal electrode in contact with the ceramic plates.

[0011] The member of the first aspect of the present invention preferably has the following characteristics. It is also preferable to combine two or more of the following characteristics: [2] The member for semiconductor manufacturing equipment according to [1], wherein a depletion layer having a lower content of the element than the inside of the ceramic plate is formed in a portion of the ceramic plate that contacts the internal electrode.

[0012] [3] The insulating material is Al ２ O ３ , AlN, Si ３ N ４ , Y ２ O ３ , YAG, SmAlO ３ , MgO and SiO ２ The semiconductor manufacturing equipment member according to [1] or [2], which is at least one selected from the group consisting of:

[0013] [4] The first conductive material is SiC, TiO ２ , TiN, TiC, W, WC, Mo, Mo ２ The semiconductor manufacturing equipment member according to any one of [1] to [3], which is at least one selected from the group consisting of C and C.

[0014] [5] The second conductive material is Mo, Mo ２ [1] to [4], which is at least one selected from the group consisting of C, W, WC, Nb, NbC, Ta, TaC, SiC, and C. A semiconductor manufacturing equipment member according to any one of [1] to [4].

[0015] A second aspect of the present invention is the following manufacturing apparatus: [6] A semiconductor manufacturing apparatus having the member for semiconductor manufacturing apparatus according to any one of [1] to [5].

[0016] A third aspect of the present invention is the following manufacturing method: [7] A method for manufacturing a member for semiconductor manufacturing equipment, comprising the steps of forming a laminate in which a plate material containing a second conductive material or a second green sheet containing the second conductive material is sandwiched between a pair of first green sheets containing an insulating material and a first conductive material, and pressure-sintering the laminate.

[0017] According to the present invention, it is possible to provide a semiconductor manufacturing equipment member in which peeling between a ceramic plate and an internal electrode is suppressed. It is also possible to provide a semiconductor manufacturing equipment having such a semiconductor manufacturing equipment member. Furthermore, it is also possible to provide a method for manufacturing such a semiconductor manufacturing equipment member that enables easy manufacturing of the semiconductor manufacturing equipment member.

[0018] FIG. 1 is a schematic cross-sectional view showing an example of an electrostatic chuck device 100 according to the present embodiment. FIG. 2 is an enlarged photograph of an example of a semiconductor manufacturing equipment member 1. FIG. 3 is an elemental map of Mo in the field of view of FIG. 2. FIG. 4 is an elemental map of Si in the field of view of FIG. 2. FIG. 5 is an SEM photograph of a cross section of the semiconductor manufacturing equipment member 1 in another field of view. FIG. 6 is an elemental map of Mo in the field of view of FIG. 5. FIG. 7 is an elemental map of Si in the field of view of FIG. 5. FIG. 8 is an optical microscope image of a cross section of the semiconductor manufacturing equipment member of Example 1. FIG. 9 is an optical microscope image of a cross section of the semiconductor manufacturing equipment member of Comparative Example 1.

[0019] Hereinafter, preferred examples of semiconductor manufacturing equipment components and semiconductor manufacturing equipment according to this embodiment will be described with reference to FIGS. 1 to 9. In all of the following drawings, the dimensions and proportions of the components have been appropriately changed to make the drawings easier to understand. The following explanations are provided to provide a more detailed explanation for a better understanding of the spirit of the invention, and do not limit the present invention unless otherwise specified. For example, unless otherwise specified, conditions such as materials, quantities, types, numbers, sizes, shapes, positions, and proportions may be changed, added, or omitted as necessary.

[0020] FIG. 1 is a cross-sectional view showing an electrostatic chuck device 100 which is a preferred example of a semiconductor manufacturing device according to this embodiment.

[0021] <<Semiconductor Manufacturing Equipment Member>> The semiconductor manufacturing equipment member 1 included in the electrostatic chuck device 100 includes a pair of ceramic plates 11, 12, and an internal electrode 20 sandwiched between the pair of ceramic plates 11, 12. The semiconductor manufacturing equipment member 1 is a bonded body formed by stacking the ceramic plate 11, the internal electrode 20, and the ceramic plate 12 in this order and bonding them together.

[0022] In this specification, the term "plan view" refers to a field of view seen from the thickness direction of the ceramic bonded body.

[0023] In addition, in this specification, the term "outer edge" refers to the area near the outer periphery when the object is viewed from above.

[0024] [Ceramic Plate] The ceramic plate 11 and the ceramic plate 12 have the same outer periphery shape at the overlapping surfaces. The thickness of the ceramic plate 11 and the ceramic plate 12 is not particularly limited and is appropriately adjusted depending on the application of the semiconductor manufacturing equipment member 1.

[0025] For example, when the semiconductor manufacturing equipment member 1 is applied to an electrostatic chuck device, the thicknesses of the ceramic plates 11 and 12 can be selected arbitrarily, but are preferably 0.2 mm or more and 3 mm or less, more preferably 0.3 mm or more and 2.5 mm or less, and even more preferably 0.4 mm or more and 2.3 mm or less.

[0026] The total thickness of the ceramic plates 11 and 12 can also be selected arbitrarily, but is preferably 0.5 mm or more and 5 mm or less. When the total thickness of the ceramic plates 11 and 12 is 0.5 mm or more, the withstand voltage of the semiconductor manufacturing equipment member 1 increases. When the total thickness of the ceramic plates 11 and 12 is 5 mm or less, the heat capacity of the semiconductor manufacturing equipment member 1 decreases, making it easier to maintain a uniform temperature of the plate-shaped sample, which is the processing target, during plasma processing.

[0027] The ceramic plates 11 and 12 have the same composition or main component, and are preferably made of a composite sintered body of an insulating material and a first conductive material.

[0028] The insulating material contained in the ceramic plates 11 and 12 is not particularly limited as long as it is a material generally used in semiconductor manufacturing equipment components. ２ O ３ , AlN, Si ３ N ４ , Y ２ O３ , yttrium aluminum garnet (YAG), SmAlO ３ , MgO and SiO ２ Among them, at least one selected from the group consisting of Al ２ O ３ , AlN is preferred.

[0029] The first conductive material contained in the ceramic plates 11 and 12 is not particularly limited as long as it is a material generally used in semiconductor manufacturing equipment components. Examples of the first conductive material include silicon carbide (SiC), titanium oxide (TiO ２ ), titanium nitride (TiN), titanium carbide (TiC), carbon material (C), W, tungsten carbide (WC), Mo, molybdenum carbide (Mo ２ Examples of the first conductive material include rare earth oxides, rare earth fluorides, etc. Examples of the carbon material include carbon nanotubes (CNTs), carbon nanofibers, and multi-layer graphene, etc. Examples of the first conductive material include SiC, TiO ２ , TiN, TiC, W, WC, Mo, Mo ２ At least one selected from the group consisting of C and C is preferred, and SiC is more preferred.

[0030] The ceramic plates 11 and 12, which are composite sintered bodies of the insulating material and the first conductive material, have a volume resistivity of 10 １３ Ω・cm or more 10 １７ The material is preferably a material having mechanical strength of about Ω cm or less, and durability against corrosive gases and their plasma, but is not particularly limited. ２ O ３ Sintered body, AlN sintered body, Al ２ O ３ In terms of dielectric properties at high temperatures, high corrosion resistance, plasma resistance, and heat resistance, the ceramic plates 11 and 12 are made of Al. ２ O ３ A sintered SiC composite is preferred.

[0031] The average primary particle size of the insulating material in the ceramic plate can be selected arbitrarily, but is preferably 0.1 μm to 10.0 μm, more preferably 0.5 μm to 8.0 μm, even more preferably 0.7 μm to 7.0 μm, and particularly preferably 0.9 μm to 3.0 μm. If necessary, it may be 0.5 μm to 1.5 μm, 1.0 μm to 2.5 μm, or 2.0 μm to 5.0 μm. If the average primary particle size of the insulating material is 0.5 μm to 10.0 μm, dense ceramic plates 11 and 12 with high voltage resistance, durability, and heat resistance can be obtained. The average primary particle size of the first conductive material can be selected arbitrarily as necessary. The ratio of the amount of insulating material to the amount of first conductive material can also be selected arbitrarily. For example, the amount of the first conductive material may be 1.0 to 10 parts by mass, 2.0 to 7.5 parts by mass, or 2.0 to 6.0 parts by mass relative to 100 parts by mass of the insulating material, but is not limited to these examples.

[0032] (Method for measuring average primary particle diameter of insulating material) The method for measuring the average primary particle diameter of the insulating ceramics constituting the ceramic plates 11 and 12 is as follows. A field emission scanning electron microscope, for example a field emission scanning electron microscope (FE-SEM, manufactured by JEOL Ltd., JSM-7800F-Prime) manufactured by JEOL Ltd., is used to observe the cut surfaces of the ceramic plates 11 and 12 in the thickness direction at a magnification of 10,000 times, and the arithmetic mean of particle diameters of 200 insulating ceramic particles is determined by the intercept method to be the average primary particle diameter. The particle diameter may be the major axis of the particle.

[0033] [Internal Electrode] The internal electrode 20 is configured to be used as a plasma control electrode that applies high-frequency power to generate plasma for processing a plate-shaped sample from atmospheric gas, an electrostatic chuck electrode that generates an electric charge to fix the plate-shaped sample by electrostatic adsorption force, and / or a heater electrode that applies electricity to generate heat to heat the plate-shaped sample, etc. The shape (shape of the internal electrode 20 when viewed from above) and size (thickness and area of ​​the internal electrode 20 when viewed from above) of the internal electrode 20 are not particularly limited and are adjusted appropriately depending on the application of the semiconductor manufacturing equipment member 1.

[0034] 1, for simplicity, the semiconductor manufacturing equipment member 1 is shown as having one internal electrode 20, but it may have two or more internal electrodes, for example, a configuration having a plurality of internal electrodes in multiple layers. When the internal electrodes are in multiple layers, each internal electrode may have the same configuration as the internal electrode 20 described below.

[0035] For example, when the semiconductor manufacturing equipment member 1 is an electrostatic chuck member, the semiconductor manufacturing equipment member 1 has an electrostatic chuck electrode as an internal electrode. The electrostatic chuck member (semiconductor manufacturing equipment member 1) may further have, as internal electrodes, either or both of a plasma control electrode and a heater electrode.

[0036] Furthermore, when the semiconductor manufacturing equipment member 1 is a CVD equipment member, the semiconductor manufacturing equipment member 1 has a heater electrode as an internal electrode. Furthermore, the CVD equipment member (semiconductor manufacturing equipment member 1) may further have, as internal electrodes, either or both of a plasma control electrode and an electrostatic chuck electrode.

[0037] The internal electrode 20 is formed as a conductive plate or the like, using the second conductive material and the elements contained in the first conductive material as materials. The internal electrode 20 may be in the form of a plate or a thin foil. Note that "using the second conductive material and the elements contained in the first conductive material" may mean that the internal electrode 20 in the semiconductor manufacturing equipment member contains the second conductive material and elements (diffused elements, described below) that have migrated from the ceramic plate. Note that the internal electrode before sintering may, but need not, contain the same elements as the elements contained in the first conductive material from the material stage.

[0038] The second conductive material may be Mo, Mo ２ It is preferable that the internal electrode 20 contains at least one element selected from the group consisting of C, W, WC, Nb, NbC, Ta, TaC, SiC, and C. The number of elements constituting the internal electrode 20 may be one type, or two or more types.

[0039] The second conductive material may be one or more metals selected from the group consisting of Mo, W, Nb, and Ta. By using a metal as the second conductive material, the resistance value of the electrode can be reduced compared to when the internal electrode 20 is made of conductive ceramics, and resistance heat generation when a high-frequency current is applied can be suppressed.

[0040] The second conductive material may be a plate (conductive ceramic plate) formed from conductive ceramics. Known conductive ceramics can be used. In terms of excellent heat resistance, it is preferable that the second conductive material be a composite sintered body of aluminum oxide particles and a carbon material. Examples of the carbon material that can be used include carbon, tantalum carbide, molybdenum carbide, and silicon carbide.

[0041] When the semiconductor manufacturing equipment member 1 has a plurality of internal electrodes 20, the internal electrodes 20 may be made of only a metal plate, may be made of only a plate made of conductive ceramics, or may be made of both a metal plate and a plate made of conductive ceramics. When there are a plurality of internal electrodes 20, it is preferable that at least one internal electrode 20 is made of a metal plate.

[0042] The melting points of the metals exemplified as materials for the internal electrodes 20 are Mo (2620°C), W (3400°C), Nb (2470°C), and Ta (2990°C). These materials are sometimes collectively referred to as "high-melting-point metals."

[0043] The thickness of the internal electrode 20 can be selected arbitrarily and is preferably, for example, 10 to 200 μm. If necessary, it may be 10 to 50 μm, 30 to 80 μm, 50 to 150 μm, or 100 to 200 μm. For example, when the internal electrode 20 is a plasma control electrode or an electrostatic chuck electrode, the thickness of the internal electrode 20 is preferably 10 to 100 μm. Furthermore, when the internal electrode 20 is a heater electrode, the thickness of the internal electrode 20 is preferably 50 to 200 μm.

[0044] It is preferable that no through holes are formed in the internal electrode 20 other than through holes required for functionality, such as gas holes (described later) of an electrostatic chuck device and holes through which lift pins are inserted. As the conductive plate that is the material of the internal electrode 20, a member in which the above-mentioned "through holes required for functionality" are formed in a single plate without through holes can be used.

[0045] The internal electrode 20 preferably has a different configuration from a so-called punched metal, for example, a punched metal having a plurality of holes regularly arranged at equal intervals. First, unlike a punched metal, the internal electrode 20 has a region free of functionally necessary through holes, which preferably accounts for 90% or more of the entire region, more preferably 97% or more.

[0046] Furthermore, the through holes in such internal electrodes 20 are provided at positions required for functionality and of an appropriate size, and therefore, unlike punched metal, they are not uniformly arranged within the surface and are often not uniform in size.

[0047] Furthermore, in the case of an electrostatic chuck device, the total number of through holes in the internal electrode 20 varies depending on the design, but is generally not more than 20. On the other hand, when a punched metal is used in an electrostatic chuck device of a normally used size, the total number of through holes in the employed punched metal is not less than 50.

[0048] At least one of the pair of ceramic plates 11 and 12 has a through-hole at a position that overlaps in plan with the "through-hole required for functionality" of the internal electrode 20 .

[0049] [Diffusion Layer and Depletion Layer] A layer having a higher content of elements contained in the first conductive material than the inside of the internal electrode 20 is formed in the portion of the internal electrode 20 that contacts the ceramic plates 11 and 12. This "layer having a higher content of elements contained in the first conductive material" corresponds to the "diffusion layer" in the present invention.

[0050] In this specification, the term "element contained in the first conductive material" may refer to the first conductive material itself or to a portion of the elements constituting the molecules constituting the first conductive material. In the following description, the "element contained in the first conductive material" may be referred to as a "diffusing element." Note that an element that migrates from the ceramic plate into the internal electrode may be referred to as a diffusing element. However, for convenience, an element present in the ceramic plate may also be referred to as a diffusing element in the following description if it is the same type of element that diffuses into the internal electrode. The difference in the content (atomic %) of the diffusing element between the interior of the internal electrode 20 and the diffusion layer of the internal electrode 20 may be arbitrarily selected. For example, when the sum of the elements of the second conductive material and the diffusing element is 100 (100 atomic %) in both the interior and the diffusion layer, the difference in the content of the diffusing element between the interior and the diffusion layer, as determined by EDX analysis or the like, may be 1 to 40 atomic %, 2 to 30 atomic %, 3 to 20 atomic %, or 5 to 10 atomic %. Before pressure sintering, the difference in the content of the diffusion element measured at the inside and at the position corresponding to the diffusion layer is 0 atomic %.

[0051] Furthermore, a layer (depletion layer) having a lower content of diffusing elements than the interior of the ceramic plate 11 is formed at the contact point between the ceramic plate 11 and the internal electrode 20. Similarly, a layer (depletion layer) having a lower content of diffusing elements than the interior of the ceramic plate 12 is formed at the contact point between the ceramic plate 12 and the internal electrode 20. This "layer having a lower content of elements (diffusion elements) contained in the first conductive material" corresponds to the "deficiency layer" in this invention. As described above, it is not necessary for all elements contained in the first conductive material to be diffusing elements; at least one type of diffusing element is sufficient. The "deficiency layer" may be a layer containing a quantity of diffusing elements that can be confirmed by EDX analysis or the like, or it may be a layer in which no diffusing elements are detected at all. Note that if the "deficiency layer" of the ceramic plate 12 contains elements (diffusion elements) contained in the first conductive material, these elements are elements that have not migrated to the internal electrode 20. Before pressure sintering, the difference in the content of the diffusion element measured inside the ceramic plate and at the position of the depleted layer was 0 atomic %.

[0052] 2 is an enlarged photograph of an example of the semiconductor manufacturing equipment member 1, and is a scanning electron microscope (SEM) photograph of a cross section of the semiconductor manufacturing equipment member 1, focusing on the internal electrode 20. The semiconductor manufacturing equipment member 1 shown in FIG. 2 is manufactured by a manufacturing method described later, using Al as the raw material for the ceramic plates 11 and 12. ２ O ３ -SiC, and Mo was used as the raw material for the internal electrodes 20.

[0053] In the semiconductor manufacturing equipment member 1 shown in FIG. 2, the insulating material is Al. ２ O ３ The first conductive material is SiC, and the second conductive material is Mo.

[0054] Figures 3 and 4 show the results of EDX phase analysis performed in the same field of view as the enlarged photograph shown in Figure 2. Figure 3 is an element map of Mo in the field of view of Figure 2. Figure 4 is an element map of Si in the field of view of Figure 2. In Figures 3 and 4, the closer to black (the lower the brightness), the smaller the amount of the measured element present, and the closer to white (the higher the brightness), the larger the amount of the measured element present.

[0055] As shown in Fig. 3, Mo constituting the internal electrode 20 is present at the same position as the position of the internal electrode 20 shown in Fig. 2. Therefore, it can be seen that Mo exists in the semiconductor manufacturing equipment member 1 without diffusing.

[0056] 4, Si, which is an element (diffusing element) contained in SiC constituting the ceramic plates 11, 12, penetrates and diffuses into the internal electrode 20. It can be seen that a diffusion layer 20b is formed in the internal electrode 20, which has a higher content of the diffusing element than the inside 20a of the internal electrode 20.

[0057] Furthermore, when the diffusion layer 20b is formed, it can be said that "the content of the diffusion element in the portion of the internal electrode 20 that contacts the ceramic plates is higher than the content of the diffusion element inside the internal electrode 20." Therefore, when the interface between the interior 20a and the diffusion layer 20b cannot be clearly determined, the presence of the diffusion layer 20b can be confirmed by comparing the amount of the diffusion element present in the portion of the internal electrode 20 that contacts the ceramic plates 11, 12 (portion A) and the center of the internal electrode 20 in the thickness direction (portion B). In Figure 2, the above-mentioned portions A and B are indicated by the symbols A and B.

[0058] Note that "part A" and "part B" are concepts having a certain extent around the positions shown in Fig. 2, and do not strictly limit the regions. In order to confirm the presence of the diffusion layer 20b, it is sufficient to determine the magnitude relationship of the amount of the diffusion element present.

[0059] It can be determined that a diffusion layer 20b is formed when the amount of the diffusing element present in portion A is greater than the amount of the diffusing element present in portion B. In this case, the center in the thickness direction of the internal electrode 20 (portion B) corresponds to the "inside of the internal electrode" in the present invention.

[0060] Furthermore, Al ２ O ３ In the ceramic plates 11 and 12 made from SiC, Si contained in SiC should be detected. However, in FIG. 4, the ceramic plates 11 and 12 are shown in black, and no Si was detected in the ceramic plates 11 and 12.

[0061] Fig. 5 is an SEM photograph of a cross section of the semiconductor manufacturing equipment member 1 in a different field of view. Figs. 6 and 7 show the results of EDX phase analysis in the same field of view as the enlarged photograph shown in Fig. 5. Fig. 6 is an element map of Mo in the field of view of Fig. 5. Fig. 7 is an element map of Si in the field of view of Fig. 5. As shown in Fig. 5, Figs. 5 to 7 analyze a cross section of the semiconductor manufacturing equipment member 1 with the ceramic plate 12 at the center of the figure.

[0062] In the upper part of FIG. 6, it can be seen that, similarly to FIG. 3, Mo constituting the internal electrode 20 is present at the same position as the position of the internal electrode 20 shown in FIG.

[0063] 7, it can be seen that the Si constituting the ceramic plate 12 has penetrated into the internal electrode 20. Furthermore, it can be seen that a black depletion layer 12b, which has a lower content of diffused elements compared to the inside 12a of the ceramic plate 12, has been formed in the portion of the ceramic plate 12 that is in contact with the internal electrode 20 and in the vicinity thereof.

[0064] Furthermore, when a depletion layer 12b is formed, it can be said that the content of the diffusing element in the portion of the ceramic plate in contact with the internal electrode 20 is smaller than the content of the diffusing element inside the ceramic plate. Furthermore, the change in the content of the diffusing element is considered to be smaller the further away from the portion of the ceramic plate in contact with the internal electrode 20. In this sense, the surface of the semiconductor manufacturing equipment component 1 (the front surface of the ceramic plate) can be considered to be the area least affected by the migration of the diffusing element to the internal electrode 20 and thus the area where the change in the content of the diffusing element in the ceramic plate is smallest. Therefore, when the interface between the interior 12a of the ceramic plate and the depletion layer 12b cannot be clearly identified, the presence of the depletion layer 12b can be confirmed by comparing the amount of the diffusing element in the portion of the ceramic plate 11, 12 in contact with the internal electrode 20 (portion C) with the outer surface of the ceramic plate 11, 12 or a portion nearby (portion D). In Figure 5, the portion C is indicated by the symbol C. Portion D is outside the field of view of Figure 5.

[0065] 5, and does not strictly limit the area. In order to confirm the presence of the depletion layer 12b, it is sufficient to determine the magnitude relationship between the amount of the diffused element present on the outer surfaces of the ceramic plates 11 and 12 and the portion nearby (portion D).

[0066] It can be determined that a depletion layer 12b is formed when the amount of the diffusing element present in portion C is less than the amount of the diffusing element present in portion D. In this case, the center in the thickness direction of the ceramic plates 11 and 12 (corresponding to portion D) can be considered to correspond to the "inside of the ceramic plate" in the present invention.

[0067] Although the state of the ceramic plate 12 is shown in FIGS. 5 to 7, it is believed that the same phenomenon occurs in the ceramic plate 11, and a depletion layer is formed.

[0068] That is, in the semiconductor manufacturing equipment member 1, it is considered that the diffusing elements contained in the ceramic plates 11 and 12 move and diffuse into the internal electrode 20. Therefore, it is considered that the content of the diffusing elements in the internal electrode 20 increases in the portion in contact with the ceramic plates 11 and 12, forming a diffusion layer 20b, and that the content of the diffusing elements in the ceramic plate 12 decreases in the portion in contact with the internal electrode 20, forming a depletion layer 12b.

[0069] In this way, it is considered that the diffusion elements in the ceramic plates 11, 12 diffuse into the internal electrode 20, causing the elements to mix with each other at the interfaces between the ceramic plates 11, 12 and the internal electrode 20, thereby firmly bonding the ceramic plates 11, 12 to the internal electrode 20. As a result, it is considered that in the semiconductor manufacturing equipment member 1, uneven adhesion between the ceramic plates 11, 12 and the internal electrode 20 is suppressed, and interfacial peeling can be suppressed.

[0070] In the diffusion layer of the internal electrode 20, the diffusion element may exist alone, or may react with an element (for example, the second conductive material) constituting the internal electrode 20 to form a compound. Both of these may also exist. As shown in FIGS. 2 to 7, when the ceramic plates 11 and 12 are Al ２ O ３ When the internal electrode 20 is a SiC composite sintered body and the second conductive material contained in the internal electrode 20 is Mo, Si may exist in the internal electrode 20 as a single Si atom, as SiC, or as a silicide of Mo.

[0071] When only Si of SiC is diffused into the internal electrode 20 , the remaining C may be diffused into the internal electrode 20 or may remain contained in the ceramic plates 11 and 12 .

[0072] 2 and 5, black band-shaped regions X exist near the boundaries with the internal electrodes in the ceramic plates 11 and 12. In the Mo element maps shown in Figures 3 and 6, Mo does not exist in the regions X, and therefore the regions X are thought to be part of the ceramic plates 11 and 12. It is possible that the remaining C described above is concentrated in the regions X.

[0073] Furthermore, the insulating material contained in the ceramic plates 11 and 12 may be diffused into the internal electrodes 20 in an amount that does not impair the conductivity of the internal electrodes 20 .

[0074] (Thickness of Diffusion Layer) The thickness of the diffusion layer is not particularly limited and can be selected arbitrarily as long as it is thick enough to prevent peeling between the ceramic plates 11, 12 and the internal electrode 20, but is preferably 1 μm or more, and more preferably 2 μm or more. There is no particular upper limit, but it may be, for example, 40 μm or less, 30 μm or less, or 20 μm or less. Specific examples include 3 μm to 10 μm, and 5 μm to 15 μm. The thickness of the diffusion layer does not need to be uniform as long as it does not cause peeling between the ceramic plates 11, 12 and the internal electrode 20.

[0075] The thickness of the diffusion layer can be measured by creating an EDX map of the diffusing elements in a field of view that includes the internal electrode 20, as shown in FIG. 4 . It is preferable that the maximum and minimum thicknesses of the diffusion layer are measured in one field of view, and that they are within the above-mentioned range. The thickness of the depletion layer can also be selected arbitrarily. Examples include, but are not limited to, 1 μm to 40 μm, 2 μm to 30 μm, and 3 μm to 20 μm. The thickness of the depletion layer may be thicker or thinner than the diffusion layer, or may be about the same.

[0076] <<Method for Manufacturing a Semiconductor Manufacturing Equipment Member>> A method for manufacturing a semiconductor manufacturing equipment member 1 includes a step of forming a laminate in which a plate material containing a second conductive material or a second green sheet containing the second conductive material is sandwiched between a pair of first green sheets containing an insulating material and a first conductive material, and a step of pressure-sintering the laminate. Note that the green sheet may generally refer to a thin sheet made by drying a paste containing a ceramic raw material powder or the like.

[0077] (First Green Sheet) The first green sheet can be obtained by preparing a slurry containing a particulate insulating material, a particulate first conductive material, a solvent, and a binder, and molding the slurry into a sheet. The slurry may contain additives commonly used in forming green sheets, such as a dispersant or a plasticizer. The insulating material and the first conductive material can be the same materials as those described as materials contained in the semiconductor manufacturing equipment member 1.

[0078] In the following description, particulate insulating material may be referred to as "insulating particles," particulate first conductive material may be referred to as "first conductive particles," and particulate second conductive material may be referred to as "second conductive particles."

[0079] The slurry for forming the first green sheet is preferably prepared by first preparing a dispersion liquid in which insulating particles and first conductive particles are dispersed in a solvent (dispersion medium), and then mixing the dispersion liquid with a binder.

[0080] (Preparation of Dispersion Liquid) The method for producing the dispersion liquid is not particularly limited, and examples thereof include a method in which insulating particles, first conductive particles, a dispersant, and a solvent are dispersed in a known dispersion liquid. For example, a two-flow particle collision type grinding and mixing device can be used.

[0081] The dispersion liquid preferably contains, for example, 1.0 parts by mass or more and 10 parts by mass or less of the first conductive particles per 100 parts by mass of the insulating particles, more preferably 2.0 parts by mass or more and 7.5 parts by mass or less, and even more preferably 2.0 parts by mass or more and 6.0 parts by mass or less.

[0082] In the dispersion, the total amount of the insulating particles and the first conductive particles is preferably, for example, 50% by mass to 90% by mass, and more preferably 60% by mass to 80% by mass, based on the total amount of the dispersion. When the total amount of the insulating particles and the first conductive particles is in this range, excessive aggregation between the particles is suppressed, and since an excessive amount of solvent is not contained, removal of the solvent when forming the first green sheet is facilitated.

[0083] The average primary particle size of the insulating particles can be selected arbitrarily, but is preferably, for example, 0.05 μm to 0.3 μm, more preferably 0.07 μm to 0.27 μm, and even more preferably 0.1 μm to 0.25 μm.

[0084] The average primary particle diameter of the first conductive particles can be selected arbitrarily, but is preferably 20 nm to 100 nm, more preferably 25 nm to 90 nm, and even more preferably 25 nm to 80 nm. The average primary particle diameter of the first conductive particles may be determined, for example, by measuring the major axes of 200 first conductive particles using an electron microscope or the like and taking the arithmetic average of the measurements.

[0085] The first conductive particles may be, for example, oxidized. For example, the first conductive particles may be oxidized in advance by heat treatment at 300° C. to 600° C. for 6 hours to 24 hours in the atmosphere.

[0086] The dispersion medium is not particularly limited as long as it can be mixed with the insulating particles, first conductive particles, binder, and additives used as needed, which are contained in the slurry. For example, water or an organic solvent can be used.

[0087] Examples of organic solvents include monohydric alcohols such as methanol, ethanol, 2-propanol, butanol, and octanol, and modified versions thereof; monocyclic monoterpene alcohols such as α-terpineol; carbitols such as butyl carbitol; esters such as ethyl acetate, butyl acetate, ethyl lactate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, butyl carbitol acetate, and γ-butyrolactone; diethyl ether, ethylene glycol monomethyl ether (methyl cellosolve), and ethylene glycol monoethyl ether. Suitable organic solvents include ethers such as ethylene glycol monobutyl ether (ethyl cellosolve), ethylene glycol monomethyl ether, and diethylene glycol monoethyl ether; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, acetylacetone, and cyclohexanone; aromatic hydrocarbons such as benzene, toluene, xylene, and ethylbenzene; and amides such as dimethylformamide, N,N-dimethylacetamide, and N-methylpyrrolidone. One of these organic solvents may be used alone, or two or more may be mixed and used as a mixed solvent.

[0088] As the dispersant, for example, polycarboxylates such as ammonium polycarboxylates, and organic polymers such as polyethylene glycol, polyvinyl alcohol, and polyvinylpyrrolidone are used.

[0089] The pH of the dispersion is preferably adjusted to a pH at which the insulating particles and the first conductive particles hetero-aggregate. For example, when aluminum oxide particles are used as the insulating particles and silicon carbide particles are used as the first conductive particles, an acid may be added to adjust the pH to 3 to 7, preferably 5 to 7, and more preferably 6 to 7, before dispersing using a disperser.

[0090] (Preparation of Slurry) Next, the dispersion liquid and a binder are mixed to obtain a slurry. The binder is not particularly limited as long as it adjusts the viscosity for forming the first green sheet and is removed during pressure sintering, as described below. Preferred examples include butyral resin, polyvinyl acetal resin, acrylic resin, cellulose resin, polyester resin, epoxy resin, polycarbonate resin, etc. These resins may be used alone or in combination of two or more.

[0091] The method for mixing the dispersion and the binder is not particularly limited. If bubbles are generated in the obtained slurry, a defoaming treatment may be carried out.

[0092] The viscosity of the slurry is not particularly limited as long as it allows a green sheet to be formed by a known method. The viscosity of the slurry is preferably, for example, 0.1 Pa·s or more and 100 Pa·s or less. If necessary, the viscosity may be 0.1 to 20 Pa·s, 1 to 30 Pa·s, 10 to 50 Pa·s, or 40 to 100 Pa·s.

[0093] (Preparation of first green sheet) The obtained slurry is applied to a film that has been subjected to a release treatment, dried to remove the solvent contained in the slurry, and then the sheet is peeled off from the film to obtain a first green sheet.

[0094] The thickness of the first green sheet can be selected arbitrarily, but is preferably 50 μm to 110 μm, and more preferably 60 μm to 100 μm. If the first green sheet has such a thickness, it becomes easier to form a laminate, which will be described later.

[0095] The first green sheet may be used as a laminate in which two or more sheets are stacked. The laminate is preferably a pressed body in which multiple first green sheets are stacked and pressed at a pressure of, for example, 10 MPa to 40 MPa. By firing the stacked first green sheets in the process described below, ceramic plates 11, 12 of the desired thickness can be easily obtained. Furthermore, the first green sheet may be processed into a desired shape.

[0096] The first green sheet or the pressed body of the first green sheets is preferably degreased in a nitrogen atmosphere at 300°C to 600°C, preferably 400°C to 550°C. Thereafter, it is also preferable to perform an oxidation treatment in the air at 240°C to 600°C, preferably 300°C to 600°C. The pressing time may be selected arbitrarily, and may be, for example, 1 minute to 5 hours or 10 minutes to 1 hour.

[0097] (Plate Material and Second Green Sheet Including Second Conductive Material) As the material for the internal electrode 20, a plate material including the second conductive material or a second green sheet including the second conductive material is prepared.

[0098] The thickness of the plate material including the second conductive material can be selected arbitrarily, but is preferably 5 μm to 200 μm, and more specifically, may be 5 to 30 μm, 20 to 60 μm, 50 to 80 μm, or 80 to 200 μm.

[0099] The plate material containing the second conductive material may be a plate material made of one or more metals selected from the group consisting of Mo, W, Nb, and Ta, or may be a conductive ceramic plate.

[0100] The conductive ceramic plate is not particularly limited as long as it has conductivity, but it is preferable that it is made of a composite sintered body of aluminum oxide particles and a carbon material, because it has excellent heat resistance. Examples of the carbon material include carbon, TaC, and Mo. ２ At least one of C, NbC and silicon carbide can be preferably used.

[0101] When a conductive ceramic plate is formed as the internal electrode 20, a second green sheet containing a second conductive material may be prepared and used. The second green sheet can be produced by the same method as the first green sheet or by a known method. For example, the second green sheet can be obtained by preparing a dispersion of aluminum oxide particles and carbon-containing particles, mixing the dispersion with a binder to prepare a slurry, and applying the slurry to a release film and drying it.

[0102] (Step of forming a laminate) A plate material containing a second conductive material or a second green sheet (hereinafter sometimes abbreviated as "conductive plate material, etc.") is sandwiched between a first green sheet or a laminate of first green sheets to form a laminate.

[0103] The lamination method is not particularly limited, and for example, a laminate may be formed by stacking first green sheets to a desired thickness, then stacking a conductive plate material, etc., and then stacking another first green sheet to a desired thickness. The number of stacked first green sheets can be selected arbitrarily, and may be, for example, 1 to 1,000 sheets, 10 to 500 sheets, or 50 to 300 sheets, but is not limited to these examples. Alternatively, a laminate may be formed by preparing two first green sheet compression bodies and sandwiching a conductive plate material, etc., between the two green sheet compression bodies.

[0104] (Step of Pressure Sintering the Laminate) Next, the obtained laminate is pressure sintered. For example, pressure sintering is performed at 1 MPa to 60 MPa, preferably 5 MPa to 50 MPa, for example, at 1500°C to 1950°C, preferably 1530°C to 1940°C, more preferably 1550°C to 1930°C, even more preferably 1570°C to 1920°C, and particularly preferably 1600°C to 1900°C. The pressure may be 10 MPa to 45 MPa, 20 MPa to 40 MPa, or 30 MPa to 35 MPa, as needed. The temperature may be 1650°C to 1850°C or 1700°C to 1800°C, as needed. A known hot press device or the like can be used for pressure sintering. The pressure sintering time can be selected as desired.

[0105] By pressure sintering at the above-mentioned pressure and temperature, elements contained in the first conductive material diffuse into the internal electrode 20, forming the above-mentioned diffusion layer and depletion layer. Furthermore, the average primary particle size of the crystal grains of the insulating material in the ceramic plates 11 and 12 can be maintained in the range of 0.5 μm to 10 μm. Therefore, the ceramic plates 11 and 12 are dense and have high voltage resistance, durability, and heat resistance. In this manner, the semiconductor manufacturing equipment member 1 can be manufactured.

[0106] As shown in FIG. 1 , an electrostatic chuck device 100 includes an electrostatic chuck member 1, which is the above-described semiconductor manufacturing apparatus component, a disk-shaped base member 103 that adjusts the electrostatic chuck member 1 to a desired temperature, and an adhesive layer 104 that bonds and integrates the electrostatic chuck member 1 and the base member 103.

[0107] <Electrostatic Chuck Member> The electrostatic chuck member 1 is disposed with the ceramic plate 11 facing upward and the ceramic plate 12 facing the base member 103. The ceramic plate 12 is provided with a through hole 115 that reaches the internal electrode 20. A power supply terminal 116 is inserted into the through hole 115 and is electrically connected to the internal electrode 20.

[0108] The upper surface (mounting surface) 11a of the ceramic plate 11 has a number of protrusions (not shown) for supporting a plate-shaped sample such as a semiconductor wafer. Furthermore, a circular protrusion with a square cross section may be provided around the periphery of the mounting surface 11a to prevent leakage of a cooling gas such as helium (He). Furthermore, a region on the mounting surface 11a surrounded by the circular protrusion may have a plurality of protrusions that are the same height as the circular protrusion, have a circular cross section, and a substantially rectangular vertical cross section.

[0109] The thickness of the ceramic plate 11 can be selected arbitrarily, preferably from 0.3 mm to 3.0 mm, and more preferably from 0.5 mm to 1.5 mm. If the thickness of the ceramic plate 11 is 0.3 mm or more, the ceramic plate 11 has excellent voltage resistance. On the other hand, if the thickness of the ceramic plate 11 is 3.0 mm or less, the electrostatic adsorption force of the electrostatic chuck member 1 is not reduced, and the thermal conductivity between the plate-shaped sample placed on the mounting surface 11a of the ceramic plate 11 and the base member 103 is not reduced, so that the temperature of the plate-shaped sample during processing can be maintained at a desired constant temperature.

[0110] The thickness of the ceramic plate 12 can be selected arbitrarily, preferably from 0.3 mm to 3.0 mm, and more preferably from 0.5 mm to 1.5 mm. If the thickness of the ceramic plate 12 is 0.3 mm or more, a sufficient withstand voltage can be ensured. On the other hand, if the thickness of the ceramic plate 12 is 3.0 mm or less, the electrostatic adsorption force of the electrostatic chuck member 1 is not reduced, and the thermal conductivity between the plate-shaped sample placed on the mounting surface 11a of the ceramic plate 11 and the base member 103 is not reduced, so that the temperature of the plate-shaped sample during processing can be maintained at a desired constant temperature.

[0111] The thickness of the internal electrode 20 can be selected arbitrarily, preferably from 5 μm to 200 μm, more preferably from 7 μm to 100 μm, and even more preferably from 10 μm to 100 μm. If the thickness of the internal electrode 20 is 5 μm or more, sufficient conductivity can be ensured. On the other hand, if the thickness of the internal electrode 20 is 200 μm or less, the thermal conductivity between the plate-shaped sample placed on the mounting surface 11a of the ceramic plate 11 and the base member 103 is not reduced, and the temperature of the plate-shaped sample during processing can be maintained at a desired constant temperature. Furthermore, the plasma permeability is not reduced, allowing stable plasma generation.

[0112] [Power Supply Terminal] The power supply terminal 116 is a member for applying a voltage to the internal electrode 20. The number, shape, etc. of the power supply terminals 116 are determined by the form of the internal electrode 20, i.e., whether it is a unipolar type or a bipolar type.

[0113] There are no particular limitations on the material of the power supply terminal 116 as long as it is a conductive material with excellent heat resistance. The material of the power supply terminal 116 is preferably a material whose thermal expansion coefficient is similar to that of the internal electrode 20 and the ceramic plate 12. For example, metal materials such as Kovar alloy and niobium (Nb), and various conductive ceramics are preferably used.

[0114] [Conductive Adhesive Layer] The conductive adhesive layer 117 is provided in the through hole 115 of the base member 103 and in the through hole 118 of the ceramic plate 12. The conductive adhesive layer 117 is also interposed between the internal electrode 20 and the power supply terminal 116, and electrically connects the internal electrode 20 and the power supply terminal 116.

[0115] The conductive adhesive that constitutes the conductive adhesive layer 117 contains a conductive material such as carbon fiber or metal powder, and a resin.

[0116] The resin contained in the conductive adhesive is not particularly limited as long as it is a resin that is unlikely to undergo cohesive failure due to thermal stress, and examples thereof include silicone resin, acrylic resin, epoxy resin, phenolic resin, polyurethane resin, unsaturated polyester resin, etc. Among these, silicone resin is preferred because it has a high degree of elasticity and is unlikely to undergo cohesive failure due to changes in thermal stress.

[0117] [Base Member] The base member 103 is a thick, disk-shaped member made of at least one of metal and ceramic. The base member 103 has a structure that also serves as an internal electrode for generating plasma. Inside the base member 103, water, He gas, N ２ A flow path 121 is formed to circulate a cooling medium such as gas.

[0118] The body of base member 103 is connected to an external high-frequency power supply 122. Furthermore, power supply terminal 116, the outer periphery of which is surrounded by insulating material 123, is fixed within through-hole 115 of base member 103 via insulating material 123. Power supply terminal 116 is connected to an external DC power supply 124.

[0119] The material constituting the base member 103 is not particularly limited as long as it is a metal having excellent thermal conductivity, electrical conductivity, and workability, or a composite material containing such a metal. Suitable materials for the base member 103 include, for example, aluminum (Al), copper (Cu), stainless steel (SUS), and titanium (Ti).

[0120] At least the surface of the base member 103 that is exposed to plasma is preferably anodized or coated with a polyimide resin. It is more preferable that the entire surface of the base member 103 is anodized or coated with a resin.

[0121] By applying anodizing or resin coating to the base member 103, the plasma resistance of the base member 103 is improved and abnormal discharge is prevented. Therefore, the plasma resistance stability of the base member 103 is improved and the occurrence of surface scratches on the base member 103 can be prevented.

[0122] [Adhesive Layer] The adhesive layer 104 is configured to bond and integrate the electrostatic chuck member 1 and the base member 103 together.

[0123] The thickness of the adhesive layer 104 is preferably 100 μm or more and 200 μm or less, and more preferably 130 μm or more and 170 μm or less. If the thickness of the adhesive layer 104 is within the above range, the adhesive strength between the electrostatic chuck member 1 and the base member 103 can be sufficiently maintained. In addition, the thermal conductivity between the electrostatic chuck member 1 and the base member 103 can be sufficiently ensured.

[0124] The adhesive layer 104 is formed of, for example, a cured product obtained by heat-curing a silicone-based resin composition, an acrylic resin, an epoxy resin, etc. Among these, a silicone-based resin composition is more preferable because it is a resin with excellent heat resistance and elasticity.

[0125] As the silicone-based resin composition, a composition having a thermosetting temperature of 70° C. to 140° C. is particularly preferred. If the thermosetting temperature is below 70° C., when the electrostatic chuck member 1 and the base member 103 are joined in a facing state, the curing does not proceed sufficiently during the joining process, resulting in poor workability, which is undesirable. On the other hand, if the thermosetting temperature exceeds 140° C., the difference in thermal expansion between the electrostatic chuck member 1 and the base member 103 becomes large, which increases the stress between the electrostatic chuck member 1 and the base member 103 and may cause peeling between them, which is undesirable.

[0126] That is, when the thermosetting temperature is 70° C. or higher, the workability is excellent in the joining process, and when the thermosetting temperature is 140° C. or lower, peeling between the electrostatic chuck member 1 and the base member 103 is difficult, which is preferable.

[0127] The above-described electrostatic chuck member (semiconductor manufacturing equipment member) 1 suppresses peeling between the base and the internal electrode. Furthermore, the above-described electrostatic chuck device 100 has high reliability due to the inclusion of the above-described electrostatic chuck member (semiconductor manufacturing equipment member) 1.

[0128] Furthermore, according to the method for manufacturing the electrostatic chuck member (semiconductor manufacturing equipment member) 1 described above, the electrostatic chuck member 1 having the above-described characteristics can be easily manufactured.

[0129] While the preferred embodiments of the present invention have been described above with reference to the accompanying drawings, the present invention is not limited to these examples. The shapes and combinations of the components shown in the above examples are merely examples, and various modifications can be made based on design requirements, etc., without departing from the spirit of the present invention.

[0130] The present invention will be described below with reference to examples, but the present invention is not limited to these examples.

[0131] (Example 1) [Preparation of slurry for forming first green sheet] Aluminum oxide (Al) having an average primary particle diameter of 0.1 μm was used. ２ O ３ ) particles and silicon carbide (SiC) particles having an average primary particle size of 0.03 μm, ２ O ３ The SiC particles were weighed out so that 5 parts by mass was used per 100 parts by mass of the particles, and the mixture was added to distilled water containing a polycarboxylic acid-based dispersant to obtain a mixture. The mixture was dispersed using an ultrasonic disperser, and then crushed and mixed using a two-flow particle collision crushing and mixing device to obtain a slurry.

[0132] The obtained slurry was mixed with a binder and a plasticizer, and the mixture was stirred and degassed using a planetary centrifugal disperser to obtain a slurry for forming a first green sheet of Example 1.

[0133] [Preparation of first green sheet] The slurry for forming the first green sheet was applied to a release film and dried at 90°C for 20 minutes. The thickness of the coating film after drying was approximately 80 µm. Next, the dried coating film was peeled off from the release film to obtain a first green sheet. The first green sheet was processed into a circle with a diameter of 50 mm to obtain a circular sheet piece. The Al contained in the first green sheet ２ O ３ The particles correspond to the insulating material in the present invention, and the SiC particles correspond to the first conductive material in the present invention.

[0134] [Preparation of Compressed Sheet] Forty of the obtained circular sheet pieces were stacked and pressed at a pressure of 20 MPa for 30 minutes to obtain a green sheet compressed body having a thickness of 3 mm. The green sheet compressed body was degreased in a nitrogen atmosphere at 500°C and then oxidized in air at 300°C to obtain a green sheet compact. Two green sheet compacts were prepared.

[0135] [Fabrication of a semiconductor manufacturing equipment component] A 15 μm thick Mo foil was sandwiched between a pair of green sheet compacts and laminated to obtain a laminate. The resulting laminate was pressure-sintered in an argon atmosphere at a pressure of 40 MPa and 1750°C for 2 hours to obtain a semiconductor manufacturing equipment component of Example 1. The Mo constituting the Mo foil corresponds to the second conductive material in the present invention.

[0136] By pressure sintering, Al is extracted from the green sheet compact. ２ O ３ A ceramic plate was obtained using the SiC composite sintered body as the forming material.

[0137] [Evaluation] (Confirmation of Presence or Absence of Interfacial Peeling) The semiconductor manufacturing equipment member of Example 1 was cut, and the cross section was observed with an optical microscope. Fig. 8 is an optical microscope image of the cross section of the semiconductor manufacturing equipment member of Example 1. From Fig. 8, it was confirmed that the pair of ceramic plates and the internal electrode were in close contact with each other.

[0138] [EDX Phase Analysis] EDX phase analysis was performed on the same cross section as that imaged in Figure 8 using a field emission scanning electron microscope (FE-SEM) equipped with an energy dispersive X-ray spectrometer (EDS). Figures 2 to 7 above correspond to the SEM images and element maps of the semiconductor manufacturing equipment member of Example 1.

[0139] 2 to 7, a diffusion layer with a thickness of about 3 to 8 μm was confirmed in the internal electrode (Mo foil), in which Si was present in a larger amount than the Si ratio present near the center of the internal electrode in the thickness direction. In other words, it was confirmed that the Mo foil used in the production of the semiconductor manufacturing equipment member had a diffusion layer formed by the diffusion of Si contained in the first conductive material, and an internal electrode was obtained.

[0140] 5 to 7, a layer with little Si (depleted layer) having a thickness of 17.5 to 20 μm was confirmed in the portion in contact with the Mo foil and on the ceramic plate side.

[0141] When the content of Mo, Si, and Al is taken as 100, EDX analysis of the area near the center of the internal electrode in the thickness direction revealed that Mo was 98.3 atomic %, Si was 0.8 atomic %, and Al was 0.9 atomic %. Furthermore, EDX analysis of the area near the diffusion layer revealed that Mo was 73.4 atomic %, Si was 20.2 atomic %, and Al was 6.4 atomic %. Furthermore, EDX analysis of the area near the depletion layer revealed that Al was 100 atomic %, with no Si or Mo detected.

[0142] Example 2 A slurry for forming a first green sheet of Example 2 was obtained in the same manner as in Example 1, except that the amount of silicon carbide particles was changed from 5 parts by mass to 3 parts by mass in the preparation of the slurry of Example 1. A green sheet compact was obtained in the same manner as in Example 1 using the obtained slurry.

[0143] A semiconductor manufacturing equipment component of Example 2 was obtained in the same manner as in Example 1, except that the obtained green sheet molding was used, a Mo foil having a thickness of 100 μm was used, and the pressing pressure was 10 MPa.

[0144] [Evaluation] As a result of the same evaluation as in Example 1, it was confirmed that the pair of ceramic plates and the internal electrode were also in close contact with each other in the semiconductor manufacturing equipment member of Example 2. Furthermore, a diffusion layer and a depletion layer were also confirmed in the semiconductor manufacturing equipment member of Example 2.

[0145] The thickness of the diffusion layer was 2.7 to 5.4 μm, and the thickness of the depletion layer was 5.4 to 10.8 μm.

[0146] (Example 3) [Fabrication of Internal Electrodes] Al was fabricated in the same manner as in the fabrication of the first green sheet. ２ O ３ 60% by volume, Mo ２ A second green sheet containing 40% by volume of C was prepared. ２ C corresponds to the second conductive material in the present invention.

[0147] A semiconductor manufacturing equipment member of Example 3 was obtained in the same manner as in Example 2, except that the second green sheet was used instead of the Mo foil. ２ O ３ -Mo ２ A C composite sintered body was obtained.

[0148] [Evaluation] As a result of the same evaluation as in Example 1, it was confirmed that the pair of ceramic plates and the internal electrodes were also in close contact with each other in the semiconductor manufacturing equipment member of Example 3. Furthermore, a diffusion layer and a depletion layer were also confirmed in the semiconductor manufacturing equipment member of Example 3. That is, the Al obtained from the second green sheet ２ O ３ -Mo ２ It was confirmed that Si contained in the first conductive material was diffused into the C compound sintered body to form a diffusion layer, thereby obtaining an internal electrode.

[0149] The thickness of the diffusion layer was about 15 μm, and the thickness of the depletion layer was about 5.0 μm.

[0150] Comparative Example 1 A green sheet compact of Comparative Example 1 was obtained in the same manner as in Example 1, except that in the preparation of the slurry for forming the first green sheet, the amount of silicon carbide particles was set to 0 parts by mass.

[0151] A component for a semiconductor manufacturing equipment of Comparative Example 1 was obtained in the same manner as in Example 1, except that the obtained green sheet molded body was used, a Mo foil having a thickness of 100 μm was used, the pressing pressure was 10 MPa, and the sintering temperature was 1500°C.

[0152] [Evaluation] Fig. 9 is an optical microscope image of a cross section of the semiconductor manufacturing equipment member of Comparative Example 1. As shown in Fig. 9, in the semiconductor manufacturing equipment member of Comparative Example 1, it was confirmed that the pair of ceramic plates and the internal electrode had peeled off.

[0153] The evaluation results of Examples 1 to 3 and Comparative Example 1 are shown in Table 1.

[0154]

[0155] As a result of the evaluation, it was confirmed that peeling of the electrode was suppressed in each of the semiconductor manufacturing equipment members of Examples 1 to 3. The ceramic plate constituting the base of the semiconductor manufacturing equipment member of this embodiment contains a conductive material (SiC powder, multilayer graphene, etc.). From this, it can be seen that the conductive material is Al ２ O ３ This suppresses grain growth and enables heat treatment at high temperatures of 1500°C or higher, more preferably 1550°C or higher. It is believed that this causes Si to diffuse from the ceramic plate to the internal electrode, forming a diffusion layer, resulting in strong adhesion at the interface and suppressing peeling.

[0156] In addition, in the semiconductor manufacturing equipment components of Examples 1 and 2, a metal plate is used as the material for the internal electrodes, and therefore resistance heat generation can be suppressed compared to semiconductor manufacturing equipment components having a conventional configuration in which conductive ceramics are used as the electrode material.

[0157] On the other hand, as shown in FIG. 9, peeling of the electrodes was confirmed in the semiconductor manufacturing equipment member of Comparative Example 1. Neither a diffusion layer nor a depletion layer was confirmed. It is believed that the semiconductor manufacturing equipment member of Comparative Example 1 does not contain SiC, which is a conductive material, so that a diffusion layer was not formed in the internal electrode, and the internal electrode (Mo foil) and the ceramic plate were not firmly bonded. As a result, peeling of the electrodes is believed to have occurred. Note that when the configuration of Comparative Example 1 is subjected to a heat treatment at 1750°C, Al is removed from the ceramic plate.２ O ３ Therefore, in Comparative Example 1, the heat treatment was carried out at a temperature at which abnormal grain growth did not occur.

[0158] The above results confirmed that the present invention is useful.

[0159] The present invention can provide a semiconductor manufacturing equipment member in which peeling between the base and the internal electrode is suppressed, and can also provide a semiconductor manufacturing equipment having such a semiconductor manufacturing equipment member.

[0160] 1 Electrostatic chuck member (member for semiconductor manufacturing equipment) 11, 12 Ceramic plate 11a Mounting surface 110, 120 Diffusion layer 12a Interior of ceramic plate 12b Depletion layer of ceramic plate 20 Internal electrode 20a Interior of internal electrode 20b Diffusion layer of internal electrode 100... Electrostatic chuck device (semiconductor manufacturing equipment) 103 Base member 103a Surface located on the electrostatic chuck member side of the base member 104 Adhesive layer 115 Through hole 116 Power supply terminal 117 Conductive adhesive layer 118 Through hole 121 Flow path 122 External high-frequency power supply 123 Insulating material 124 External DC power supply A Portion where the internal electrode contacts the ceramic plate B Central portion of the internal electrode in the thickness direction C Portion where the ceramic contacts the internal electrode G Gap X The area of ​​the ceramic plate near the boundary with the internal electrode

Claims

1. A component for semiconductor manufacturing equipment comprising: a pair of ceramic plates; and an internal electrode sandwiched between the pair of ceramic plates, wherein the ceramic plates include an insulating material and a first conductive material, the internal electrode is made of a second conductive material and an element contained in the first conductive material, and a diffusion layer is formed in the portion of the internal electrode that contacts the ceramic plates, the diffusion layer having a higher content of the element compared to the inside of the internal electrode.

2. A semiconductor manufacturing equipment member according to claim 1, wherein a depletion layer having a lower content of said element than the interior of said ceramic plate is formed in the portion of said ceramic plate that contacts said internal electrode.

3. The insulating material is Al ２ O ３ , AlN, Si ３ N ４ , Y ２ O ３ , YAG, SmAlO ３ , MgO and SiO ２ 3. The member for semiconductor manufacturing equipment according to claim 1, which is at least one selected from the group consisting of:

4. The first conductive material is SiC, TiO ２ , TiN, TiC, W, WC, Mo, Mo ２ 3. The semiconductor manufacturing equipment member according to claim 1, which is at least one selected from the group consisting of C and C.

5. The second conductive material is Mo, Mo ２ 3. The semiconductor manufacturing equipment member according to claim 1, which is at least one selected from the group consisting of C, W, WC, Nb, NbC, Ta, TaC, SiC and C.

6. A semiconductor manufacturing device comprising the component for semiconductor manufacturing device according to claim 1 or 2.

7. A method for manufacturing a component for semiconductor manufacturing equipment, comprising the steps of: forming a laminate in which a plate material containing a second conductive material or a second green sheet containing the second conductive material is sandwiched between a pair of first green sheets containing an insulating material and a first conductive material; and pressure sintering the laminate.

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