Electronic device and wearable device

Abstract

An electronic device of the present disclosure may comprise: a semiconductor optical amplifier for dividing an outputtable wavelength band and outputting a plurality of laser lights having a designated wavelength band and a designated power; a fixed array distributed Bragg reflector (DBR) grating which changes the wavelength of the plurality of laser lights and outputs the plurality of laser lights having the changed wavelength; and an output coupler for outputting the plurality of modulated laser lights to the outside of the electronic device by adjusting the output direction and / or angle of the plurality of modulated laser lights.

Description

Electronic devices and wearable devices

[0001] The present disclosure relates to electronic devices and wearable devices.

[0002] Recently, electronic devices that include sensors capable of measuring a user's biometric information and / or fitness data have been developed.

[0003] These electronic devices are typically carried in a pocket or hand for on-the-go use, but they can also be worn on other parts of the body or various structures. These devices can utilize wearable devices to provide health and fitness information.

[0004] The above information may be provided as background art to aid in understanding the present disclosure. No claim or determination is made as to whether any of the above is applicable as prior art related to the present disclosure.

[0005] To detect blood glucose information from a user's biometric data, an electronic device may include a sensor capable of noninvasively detecting blood glucose levels based on an optical sensor (e.g., a laser). The electronic device may output light from a light source of the optical sensor. The electronic device may analyze an object by acquiring a spectrum of light transmitted and / or reflected by the object. Multiple light sources covering different wavelengths may be used to configure a wavelength band targeted by the optical sensor.

[0006] At this time, if each light source covers a wide range of wavelengths, the intensity of the light output may be lower than a set standard. Alternatively, if the intensity (power) of the light output from each light source exceeds a set standard, the range of wavelengths that each light source can cover may be reduced.

[0007] An electronic device including an optical sensor including a plurality of light sources of the present disclosure is intended to control the power of the light sources for each predetermined band section.

[0008] The electronic device of the present disclosure may include a semiconductor optical amplifier that divides an outputtable wavelength band and outputs a plurality of laser lights having a designated wavelength band and a designated power; a fixed array distributed Bragg reflector grating that changes the wavelengths of the plurality of laser lights and outputs a plurality of laser lights having changed wavelengths; and an output coupler that adjusts the output direction and / or angle of the plurality of modulated laser lights and outputs the plurality of modulated laser lights to the outside of the electronic device.

[0009] A wearable device of the present disclosure may include a transmitter circuit; a receiver circuit; and a processor, wherein the transmitter circuit may include a semiconductor optical amplifier that divides an outputtable wavelength band and outputs a plurality of laser lights having a designated wavelength band and a designated power; a fixed array distributed Bragg reflector grating that changes the wavelengths of the plurality of laser lights and outputs a plurality of laser lights having changed wavelengths; and an output coupler that adjusts the output direction and / or angle of the plurality of modulated laser lights and outputs the plurality of modulated laser lights to the outside of the electronic device.

[0010] The electronic device and wearable device of the present disclosure can improve accuracy when measuring an object using light by controlling the power of a light source for each predetermined band section to output light.

[0011] The electronic device and wearable device of the present disclosure can improve the signal-to-noise ratio when measuring an object using light by controlling the power of a light source for each predetermined band section to output light.

[0012] In connection with the description of the drawings, the same or similar reference numerals may be used for identical or similar components.

[0013] FIG. 1 is a block diagram of an electronic device within a network environment according to various embodiments of the present disclosure.

[0014] FIG. 2A is a diagram illustrating an electronic device according to one embodiment of the present disclosure.

[0015] FIG. 2b is a drawing showing a light output structure and a light receiving structure arranged on a second side or rear surface of an electronic device according to one embodiment of the present disclosure.

[0016] FIG. 3 is a block diagram illustrating a sensor circuit of an electronic device according to one embodiment of the present disclosure.

[0017] Figure 4 is a diagram showing a transmitter circuit implemented in a silicon-based integrated circuit.

[0018] FIG. 5 is a graph showing the density of light according to wavelength after each of a plurality of optical amplifier chips included in a semiconductor optical amplifier (311) irradiates water with a laser output at the same level of power.

[0019] FIG. 6 is a graph showing the power of a laser by wavelength band output from a semiconductor optical amplifier (311) including at least five optical amplifier chips according to one embodiment of the present disclosure.

[0020] FIG. 7 is a graph showing the power of a laser according to each wavelength band output from a semiconductor optical amplifier including at least four optical amplifier chips according to one embodiment of the present disclosure.

[0021] FIG. 8 is a graph showing the power of a laser according to each wavelength band output from a semiconductor optical amplifier including at least three optical amplifier chips according to one embodiment of the present disclosure.

[0022] FIG. 9 is a flowchart illustrating a laser output method of an electronic device according to one embodiment of the present disclosure.

[0023] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings so that those skilled in the art can easily implement the present disclosure. However, the present disclosure may be implemented in various different forms and is not limited to the embodiments described herein. In connection with the description of the drawings, the same or similar reference numerals may be used for identical or similar components. Furthermore, in the drawings and related descriptions, descriptions of well-known functions and configurations may be omitted for clarity and conciseness.

[0024] FIG. 1 is a block diagram of an electronic device (101) within a network environment (100) according to various embodiments.

[0025] Referring to FIG. 1, in a network environment (100), an electronic device (101) may communicate with an electronic device (102) via a first network (198) (e.g., a short-range wireless communication network), or may communicate with at least one of an electronic device (104) or a server (108) via a second network (199) (e.g., a long-range wireless communication network). In one embodiment, the electronic device (101) may communicate with the electronic device (104) via the server (108). According to one embodiment, the electronic device (101) may include a processor (120), a memory (130), an input module (150), an audio output module (155), a display module (160), an audio module (170), a sensor module (176), an interface (177), a connection terminal (178), a haptic module (179), a camera module (180), a power management module (188), a battery (189), a communication module (190), a subscriber identification module (196), or an antenna module (197). In some embodiments, the electronic device (101) may omit at least one of these components (e.g., the connection terminal (178)), or may have one or more other components added. In some embodiments, some of these components (e.g., the sensor module (176), the camera module (180), or the antenna module (197)) may be integrated into one component (e.g., the display module (160)).

[0026] The processor (120) may include various processing circuits and / or multiple processors. For example, the term "processor" as used herein, including in the claims, may include various processing circuits including at least one processor, one or more of which may be configured to individually and / or collectively perform the various functions described herein in a distributed manner. When "processor," "at least one processor," and "one or more processors" are described herein as being configured to perform multiple functions, these terms may include, by way of example and without limitation, instances where one processor performs some of the described functions and other processor(s) perform other described functions, and instances where a single processor performs all of the described functions. Additionally, the at least one processor may include a combination of processors that perform the various functions enumerated / disclosed, for example, in a distributed manner. The at least one processor may execute program instructions to achieve or perform the various functions. The processor (120) may, for example, execute software (e.g., a program (140)) to control at least one other component (e.g., a hardware or software component) of the electronic device (101) connected to the processor (120) and perform various data processing or operations. According to one embodiment, as at least a part of the data processing or operations, the processor (120) may store commands or data received from other components (e.g., a sensor module (176) or a communication module (190)) in a volatile memory (132), process the commands or data stored in the volatile memory (132), and store result data in a non-volatile memory (134).According to one embodiment, the processor (120) may include a main processor (121) (e.g., a central processing unit or processor) or an auxiliary processor (123) (e.g., a graphics processing unit, a neural processing unit (NPU), an image signal processor, a sensor hub processor, or a communication processor) that can operate independently or together with the main processor (121). For example, when the electronic device (101) includes the main processor (121) and the auxiliary processor (123), the auxiliary processor (123) may be configured to use less power than the main processor (121) or to be specialized for a given function. The auxiliary processor (123) may be implemented separately from the main processor (121) or as a part thereof.

[0027] The auxiliary processor (123) may control at least a portion of functions or states associated with at least one component (e.g., a display module (160), a sensor module (176), or a communication module (190)) of the electronic device (101), for example, on behalf of the main processor (121) while the main processor (121) is in an inactive (e.g., sleep) state, or together with the main processor (121) while the main processor (121) is in an active (e.g., application execution) state. In one embodiment, the auxiliary processor (123) (e.g., an image signal processor or a communication processor) may be implemented as a part of another functionally related component (e.g., a camera module (180) or a communication module (190)). In one embodiment, the auxiliary processor (123) (e.g., a neural network processing unit) may include a hardware structure specialized for processing artificial intelligence models. The artificial intelligence models may be generated through machine learning. This learning can be performed, for example, on the electronic device (101) itself where the artificial intelligence model is executed, or can be performed through a separate server (e.g., server (108)). The learning algorithm can include, for example, supervised learning, unsupervised learning, semi-supervised learning, or reinforcement learning, but is not limited to the examples described above. The artificial intelligence model can include multiple artificial neural network layers.The artificial neural network may be one of a deep neural network (DNN), a convolutional neural network (CNN), a recurrent neural network (RNN), a restricted Boltzmann machine (RBM), a deep belief network (DBN), a bidirectional recurrent deep neural network (BRDNN), a deep Q-network, or a combination of two or more of the above, but is not limited to the examples described above. In addition to, or alternatively to, a hardware structure, an artificial intelligence model may include a software structure.

[0028] The memory (130) can store various data used by at least one component (e.g., processor (120) or sensor module (176)) of the electronic device (101). The data can include, for example, software (e.g., program (140)) and input data or output data for commands related thereto. The memory (130) can include volatile memory (132) or non-volatile memory (134).

[0029] The program (140) may be stored as software in the memory (130) and may include, for example, an operating system (142), middleware (144), or an application (146).

[0030] The input module (150) can receive commands or data to be used in a component of the electronic device (101) (e.g., a processor (120)) from an external source (e.g., a user) of the electronic device (101). The input module (150) can include, for example, a microphone, a mouse, a keyboard, a key (e.g., a button), or a digital pen (e.g., a stylus pen).

[0031] The audio output module (155) can output audio signals to the outside of the electronic device (101). The audio output module (155) can include, for example, a speaker or a receiver. The speaker can be used for general purposes, such as multimedia playback or recording playback. The receiver can be used to receive incoming calls. In one embodiment, the receiver can be implemented separately from the speaker or as part of the speaker.

[0032] The display module (160) can visually provide information to an external party (e.g., a user) of the electronic device (101). The display module (160) may include, for example, a display, a holographic device, or a projector and a control circuit for controlling the device. According to one embodiment, the display module (160) may include a touch sensor configured to detect a touch, or a pressure sensor configured to measure the intensity of a force generated by the touch.

[0033] The audio module (170) can convert sound into an electrical signal, or vice versa, convert an electrical signal into sound. According to one embodiment, the audio module (170) can acquire sound through the input module (150), output sound through the sound output module (155), or an external electronic device (e.g., electronic device (102)) (e.g., speaker or headphone) directly or wirelessly connected to the electronic device (101).

[0034] The sensor module (176) can detect the operating status (e.g., power or temperature) of the electronic device (101) or the external environmental status (e.g., user status) and generate an electrical signal or data value corresponding to the detected status. According to one embodiment, the sensor module (176) can include, for example, a gesture sensor, a gyro sensor, a barometric pressure sensor, a magnetic sensor, an acceleration sensor, a grip sensor, a proximity sensor, a color sensor, an IR (infrared) sensor, a biometric sensor, a temperature sensor, a humidity sensor, or an illuminance sensor.

[0035] The interface (177) may support one or more designated protocols that may be used to directly or wirelessly connect the electronic device (101) with an external electronic device (e.g., the electronic device (102)). In one embodiment, the interface (177) may include, for example, a high definition multimedia interface (HDMI), a universal serial bus (USB) interface, an SD card interface, or an audio interface.

[0036] The connection terminal (178) may include a connector through which the electronic device (101) may be physically connected to an external electronic device (e.g., electronic device (102)). According to one embodiment, the connection terminal (178) may include, for example, an HDMI connector, a USB connector, an SD card connector, or an audio connector (e.g., a headphone connector).

[0037] The haptic module (179) can convert electrical signals into mechanical stimuli (e.g., vibration or movement) or electrical stimuli that a user can perceive through tactile or kinesthetic sensations. According to one embodiment, the haptic module (179) can include, for example, a motor, a piezoelectric element, or an electrical stimulation device.

[0038] The camera module (180) can capture still images and videos. According to one embodiment, the camera module (180) may include one or more lenses, image sensors, image signal processors, or flashes.

[0039] The power management module (188) can manage power supplied to the electronic device (101). According to one embodiment, the power management module (188) can be implemented as, for example, at least a part of a power management integrated circuit (PMIC).

[0040] A battery (189) may power at least one component of the electronic device (101). In one embodiment, the battery (189) may include, for example, a non-rechargeable primary battery, a rechargeable secondary battery, or a fuel cell.

[0041] The communication module (190) may support the establishment of a direct (e.g., wired) communication channel or a wireless communication channel between the electronic device (101) and an external electronic device (e.g., electronic device (102), electronic device (104), or server (108)), and the performance of communication through the established communication channel. The communication module (190) may operate independently from the processor (120) (e.g., application processor) and may include one or more communication processors that support direct (e.g., wired) communication or wireless communication. According to one embodiment, the communication module (190) may include a wireless communication module (192) (e.g., a cellular communication module, a short-range wireless communication module, or a global navigation satellite system (GNSS) communication module) or a wired communication module (194) (e.g., a local area network (LAN) communication module, or a power line communication module). Among these communication modules, the corresponding communication module can communicate with an external electronic device (104) via a first network (198) (e.g., a short-range communication network such as Bluetooth, wireless fidelity (WiFi) direct, or infrared data association (IrDA)) or a second network (199) (e.g., a long-range communication network such as a legacy cellular network, a 5G network, a next-generation communication network, the Internet, or a computer network (e.g., a LAN or WAN)). These various types of communication modules can be integrated into a single component (e.g., a single chip) or implemented as multiple separate components (e.g., multiple chips). The wireless communication module (192) can verify or authenticate the electronic device (101) within a communication network such as the first network (198) or the second network (199) by using subscriber information (e.g., an international mobile subscriber identity (IMSI)) stored in the subscriber identification module (196).

[0042] The wireless communication module (192) can support 5G networks and next-generation communication technologies following the 4G network, such as NR access technology (new radio access technology). The NR access technology can support high-speed transmission of high-capacity data (eMBB (enhanced mobile broadband)), minimization of terminal power and connection of multiple terminals (mMTC (massive machine type communications)), or high reliability and low latency (URLLC (ultra-reliable and low-latency communications)). The wireless communication module (192) can support, for example, a high-frequency band (e.g., mmWave band) to achieve a high data transmission rate. The wireless communication module (192) can support various technologies for securing performance in a high-frequency band, such as beamforming, massive multiple-input and multiple-output (MIMO), full dimensional MIMO (FD-MIMO), array antenna, analog beam-forming, or large scale antenna. The wireless communication module (192) can support various requirements specified in the electronic device (101), an external electronic device (e.g., the electronic device (104)), or a network system (e.g., the second network (199)). According to one embodiment, the wireless communication module (192) can support a peak data rate (e.g., 20 Gbps or more) for eMBB realization, a loss coverage (e.g., 164 dB or less) for mMTC realization, or a U-plane latency (e.g., 0.5 ms or less for downlink (DL) and uplink (UL), or 1 ms or less for round trip) for URLLC realization.

[0043] The antenna module (197) can transmit or receive signals or power to or from an external device (e.g., an external electronic device). In one embodiment, the antenna module (197) may include an antenna including a radiator formed of a conductor or a conductive pattern formed on a substrate (e.g., a PCB). In one embodiment, the antenna module (197) may include a plurality of antennas (e.g., an array antenna). In this case, at least one antenna suitable for a communication method used in a communication network, such as the first network (198) or the second network (199), may be selected from the plurality of antennas, for example, by the communication module (190). A signal or power may be transmitted or received between the communication module (190) and an external electronic device via the at least one selected antenna. In some embodiments, in addition to the radiator, another component (e.g., a radio frequency integrated circuit (RFIC)) may be additionally formed as a part of the antenna module (197).

[0044] According to various embodiments, the antenna module (197) may form a mmWave antenna module. In one embodiment, the mmWave antenna module may include a printed circuit board, an RFIC disposed on or adjacent a first side (e.g., a bottom side) of the printed circuit board and capable of supporting a designated high-frequency band (e.g., a mmWave band), and a plurality of antennas (e.g., an array antenna) disposed on or adjacent a second side (e.g., a top side or a side side) of the printed circuit board and capable of transmitting or receiving signals in the designated high-frequency band.

[0045] At least some of the above components can be interconnected and exchange signals (e.g., commands or data) with each other via a communication method between peripheral devices (e.g., a bus, GPIO (general purpose input and output), SPI (serial peripheral interface), or MIPI (mobile industry processor interface)).

[0046] According to one embodiment, commands or data may be transmitted or received between the electronic device (101) and an external electronic device (104) via a server (108) connected to a second network (199). Each of the external electronic devices (102 or 104) may be the same or a different type of device as the electronic device (101). According to one embodiment, all or part of the operations executed in the electronic device (101) may be executed in one or more of the external electronic devices (102, 104, or 108). For example, when the electronic device (101) is to perform a certain function or service automatically or in response to a request from a user or another device, the electronic device (101) may, instead of or in addition to executing the function or service itself, request one or more external electronic devices to perform the function or at least a part of the service. One or more external electronic devices that receive the request may execute at least a portion of the requested function or service, or an additional function or service related to the request, and transmit the result of the execution to the electronic device (101). The electronic device (101) may process the result as is or additionally and provide it as at least a portion of a response to the request. For this purpose, cloud computing, distributed computing, mobile edge computing (MEC), or client-server computing technology may be used, for example. The electronic device (101) may provide an ultra-low latency service by using distributed computing or mobile edge computing, for example. In another embodiment, the external electronic device (104) may include an Internet of Things (IoT) device. The server (108) may be an intelligent server utilizing machine learning and / or a neural network. According to one embodiment, the external electronic device (104) or the server (108) may be included in the second network (199).The electronic device (101) can be applied to intelligent services (e.g., smart home, smart city, smart car, or healthcare) based on 5G communication technology and IoT-related technology.

[0047] FIG. 2A is a drawing showing the front side (231) of an electronic device (201) according to one embodiment of the present disclosure.

[0048] FIG. 2b is a drawing of the rear side (232) of an electronic device (201) according to one embodiment of the present disclosure.

[0049] Referring to FIGS. 2A and 2B, the electronic device (201) of FIGS. 2A and 2B may be identical to or similar to the components of the electronic device (101) of FIG. 1. However, the present invention is not limited thereto, and the electronic device (201) of FIG. 2 may have additional or omitted components compared to the electronic device (101) of FIG. 1.

[0050] In one embodiment, the electronic device (201) may include a display (260) (e.g., the display module (160) of FIG. 1) on the front surface (231). The electronic device (201) may be a wearable device that can be worn by a user in the shape of a watch. The electronic device (201) may display an interface (210) related to the watch on at least a portion of the display (260).

[0051] In one embodiment, the electronic device (201) may include a case (case, 220) and a band (band, 240).

[0052] In one embodiment, the case (220) may include a bezel (221), a crown (222), and a display (260) on the outside. The case (220), referring to FIG. 1, may include a processor (e.g., including a processing circuit) (120), a memory (130), an input module (e.g., including an input circuit) (150), an audio output module (e.g., including an audio output circuit) (155), a display module (e.g., including a display) (160), an audio module (e.g., including an audio circuit) (170), a sensor module (e.g., including at least one sensor) (176), an interface (e.g., including an interface circuit) (177), a connection terminal (178), a haptic module (e.g., including a haptic circuit) (179), a camera module (e.g., including at least one camera) (180), a power management module (e.g., including a power management circuit) (188), a battery (189), a communication module (e.g., including a communication circuit) (190), a subscriber identification module (e.g., a SIM) (196), and / or an antenna module (e.g., including at least one antenna) (197) internally or externally. May include.

[0053] In one embodiment, a display (260) may be disposed on the front (231) of the case (220), and at least a portion of a sensor circuit (e.g., a sensor circuit (300) of FIG. 3) (e.g., an output coupler (315) of FIG. 3 and / or a photodetector) may be exposed to the outside on the back (232).

[0054] In one embodiment, the back (232) of the case (220) may be at least partially in contact with the user when the electronic device (201) is worn by the user via the band (240).

[0055] In one embodiment, the bezel (221) may be concentric with the circular display (260), and may be in the shape of a ring. The inner radius of the bezel (221) may be substantially the same as the radius of the display (260). The bezel (221) may be positioned at a portion of the edge of the case (220) to protect the display (260) from external impact.

[0056] In one embodiment, the bezel (221) can rotate in at least one direction, either clockwise or counterclockwise. The bezel (221) can serve as an input device of the electronic device (201). When the bezel (221) rotates, the electronic device (201) can determine the speed and direction of rotation of the bezel (221) as user input, and control the functions of the electronic device (201) based on the user input.

[0057] In one embodiment, the crown (222) may be positioned to protrude from at least a portion of the case (220). The crown (222) may have a cylindrical shape. The crown (222) may be connected to the case (220) and rotate around a rotational axis. The crown (222) may be connected to the case (220) and rotate by means of a stem that provides a rotational axis.

[0058] In one embodiment, the crown (222) can serve as an input device of the electronic device (201). When the crown (222) rotates, the electronic device (201) can determine the rotation speed and rotation direction of the crown (222) as user input, and control the function of the electronic device (201) according to the user input.

[0059] In one embodiment, a band (or strap) (240) may allow the electronic device (201) to be secured to the user's wrist. The band (240) may be composed of various materials, such as metal, rubber, or leather. The band (240) is connected to one end of the case (220), and the band (240) connected to the case (220) may be replaceable.

[0060] In one embodiment, the electronic device (201) may include a light output structure (270) and a plurality of light receiving structures (271, 272, 273, 274) on the rear surface (232). The light output structure (270) may include an output coupler (e.g., output coupler (315) of FIG. 3) at least in part. The electronic device (201) may include a plurality of light receiving structures (271, 272, 273, 274) spaced apart from the light output structure (270) by a first distance (R1). The first distance (R1) may have a specified length. Each of the plurality of light receiving structures (271, 272, 273, 274) may include a receiving circuit (330) and / or a photodetector.

[0061] However, it is not limited thereto, and the electronic device (2010) may include a photoplethysmogram (PPG) sensor, an electrocardiogram (ECG) sensor, an optical output structure (270) and a plurality of optical receiving structures (271, 272, 273, 274) on the rear (232).

[0062] Referring to FIG. 2b, the first light receiving structure (271), the second light receiving structure (272), the third light receiving structure (273), and the fourth light receiving structure (274) can be arranged in a shape centered on the light output structure (270).

[0063] FIG. 3 is a block diagram showing a sensor circuit (300) of an electronic device (201) according to one embodiment of the present disclosure.

[0064] FIG. 4 is a diagram showing a transmitter circuit (310) implemented in a silicon-based integrated circuit.

[0065] Referring to FIGS. 3 and 4, the sensor circuit (300) of FIG. 3 may be identical to or similar to the sensor module (176) of FIG. 1, or may be included in the sensor module (176) of FIG. 1.

[0066] In one embodiment, the sensor circuit (300) may include a transmitter circuit (310), a processor (e.g., including a processing circuit) (320), and / or a receiver circuit (330).

[0067] In one embodiment, the transmitter circuit (310) may include a semiconductor optical amplifier (311), a fixed array distributed bragg reflector (DBR) grating (312), a modulator (313), a monitoring circuit (314), and / or an output coupler (315).

[0068] In one embodiment, the semiconductor optical amplifier (311) may include a plurality of optical amplifier chips (optical amplifier chips) (3111, 3112, 3112). However, the present invention is not limited thereto, and the semiconductor optical amplifier (311) may include at least one optical amplifier chip.

[0069] In one embodiment, the semiconductor optical amplifier (311) can output and / or generate a broadband laser light under the control of the processor (320). The semiconductor optical amplifier (311) can output and / or generate a laser light having a wavelength in a band of about 2000 nm to about 2400 nm (or about 1500 nm to about 1850 nm). The laser light having a wavelength in a band of about 2000 nm to about 2400 nm (or about 1500 nm to about 1850 nm) may be a wavelength in a band appropriate for detecting blood sugar (or glucose). A plurality of optical amplifier chips can output and / or generate a broadband laser light under the control of the processor (320). A plurality of optical amplifier chips can output and / or generate laser light having a wavelength in the range of about 2000 nm to about 2400 nm (or about 1500 nm to about 1850 nm).

[0070] In one embodiment, the semiconductor optical amplifier (311) can control the output intensity of laser lights output from each of the plurality of optical amplifier chips by controlling current and / or voltage under the control of the processor (320). The electronic device (201) can store a setting value or setting data for the output intensity of the laser lights in the memory (130). Based on the setting value or setting data, the electronic device (2011) can control the output intensity of laser lights output from each of the plurality of optical amplifier chips by controlling current and / or voltage.

[0071] In one embodiment, blood sugar can absorb at least a portion of the modulated plurality of laser lights output from the sensor circuit (300). The electronic device (201) can receive the modulated plurality of laser lights that are not absorbed by the blood sugar but are transmitted or reflected using the photodetector of the receiving circuit (330), and determine the concentration of blood sugar under the control of the processor (320) based on the amount (or intensity) and / or wavelength of the received light.

[0072] In one embodiment, the semiconductor optical amplifier (311) can output and / or generate a plurality of laser lights having a wide bandwidth under the control of the processor (320).

[0073] In one embodiment, the semiconductor optical amplifier (311) can output and / or generate a plurality of laser lights having a broadband in a time division manner under the control of the processor (320).

[0074] In one embodiment, a plurality of optical amplifier chips can output and / or generate broadband laser light in a time division manner under the control of the processor (320).

[0075] In one embodiment, the processor (320) of FIG. 3 may be identical or similar to the processor (120) of FIG. 1, and the above description may be equally applicable to the processor (120) and the processor (320). However, the present invention is not limited thereto, and the processor (320) of FIG. 3 may be independent of the processor (120) of FIG. 1 and may be included in the sensor circuit (300). The processor (320) may be implemented in the form of an application-specific integrated circuit (ASIC).

[0076] In one embodiment, the fixed array DBR grating (312) can change the wavelength of a broadband laser light output and / or generated from a semiconductor optical amplifier (311) to output laser light having a designated wavelength. The designated wavelength may have a shorter wavelength than the wavelength output from the semiconductor optical amplifier (311).

[0077] In one embodiment, a fixed array DBR grating (312) can output a plurality of laser lights having a specified wavelength by changing the wavelength of broadband laser lights output and / or generated from a plurality of semiconductor optical amplifiers (311).

[0078] In one embodiment, a fixed array DBR grating (312) corresponds to each optical amplifier chip and can output a plurality of laser lights having a designated wavelength by changing the wavelength of a broadband laser output and / or generated by each optical amplifier chip.

[0079] In one embodiment, the modulator (313) can modulate a plurality of laser lights of a specified wavelength output from the fixed array DBR grating (312) under the control of the processor (320). The sensor circuit (310) can modulate a plurality of laser lights of a specified wavelength output from the fixed array DBR grating (312) using the modulator (313) to improve the signal to noise ratio (SNR) of the output laser lights.

[0080] In one embodiment, the modulator (313) can modulate laser light having a specified wavelength into a continuous wave and / or a pulse wave.

[0081] In one embodiment, the modulator (313) may include a lock-in amplifier and / or a low pass filter (LPF).

[0082] In one embodiment, the modulator (313) can modulate a plurality of laser lights of a specified wavelength output from a fixed array DBR grating (312) and output a plurality of modulated laser lights.

[0083] In one embodiment, a plurality of modulated laser lights output from the modulator (313) may be transmitted to the output coupler (315) through a waveguide (e.g., waveguide (316) of FIG. 4).

[0084] In one embodiment, the output coupler (315) can change the output direction of a plurality of modulated laser lights so that they can be output to the outside of the transmission circuit (310). For example, referring to FIG. 4, in a transmission circuit (310) implemented in a silicon-based integrated circuit, when light travels on the xy coordinate plane and reaches the output coupler (315), it can be output in the z-axis, which is the vertical direction of the coordinate plane.

[0085] In one embodiment, the output coupler (315) can, under the control of the processor (320), adjust the output direction and / or angle of the modulated laser lights to output them to the outside of the transmission circuit (310).

[0086] In one embodiment, the monitoring circuit (314) may include, but is not limited to, an edge illuminated photodiode, a Mach-Zehnder interferometer (MZI) sensor, a ring resonator, a line coupling, and / or a splitter, for example.

[0087] In one embodiment, the monitoring circuit (314) can verify and / or monitor whether a plurality of modulated laser lights transmitted through a waveguide (e.g., waveguide (316) of FIG. 4) are output according to a specified intensity (or power) and a specified wavelength.

[0088] In one embodiment, the monitoring circuit (314) can detect at least some of the modulated laser light transmitted through a waveguide (e.g., waveguide (316) of FIG. 4).

[0089] For example, if the light output from the transmission circuit (310) deviates from the specified intensity and wavelength, the blood sugar concentration detected by the processor (320) and / or the electronic device (201) may be measured inaccurately. The monitoring circuit (314) can check whether a plurality of modulated laser lights transmitted through a waveguide (e.g., the waveguide (316) of FIG. 4) are output according to a specified intensity (or power) and a specified wavelength, and can transmit the confirmed information to the processor (320). The processor (320) can control the intensity and wavelength of the light output from the semiconductor optical amplifier (311) based on the information received through the monitoring circuit (314). The information can include data on whether a plurality of modulated laser lights are output according to a specified intensity (or power) and a specified wavelength.

[0090] In one embodiment, an edge illuminated photodiode of the monitoring circuit (314) can detect the intensity of light reaching the monitoring circuit (314). A Mach-Zehnder interferometer sensor of the monitoring circuit (314) can detect the wavelength of light reaching the monitoring circuit (314).

[0091] In one embodiment, the monitoring circuit (314) may be connected between the modulator (313) and the output coupler (315). However, this is not limited to the above, and the monitoring circuit (314) may be connected between the fixed array DBR grid (312) and the modulator (313).

[0092] In one embodiment, the receiving circuit (330) may include a photo detector. The receiving circuit (330) may include a plurality of photo detectors. The receiving circuit (330) may include at least one photo detector. The photo detector may be spaced apart from a structure from which light is output in the transmitting circuit (310) by a specified distance. The structure from which light is output in the transmitting circuit (310) may be, for example, an output coupler (315). However, the present invention is not limited thereto, and the structure from which light is output in the transmitting circuit (310) may include a light output structure and / or an opening corresponding to the output coupler (315). The photo detector may detect a wavelength in a band of about 2000 nm to about 2400 nm.

[0093] In one embodiment, the distance between the photodetector and the structure from which light is output (e.g., the output coupler (315)) in the transmission circuit (310) may be at least one. The distance between the photodetector and the structure from which light is output (e.g., the output coupler (315)) in the transmission circuit (310) may vary. For example, the distance between the plurality of photodetectors and the structure from which light is output (e.g., the output coupler (315)) in the transmission circuit (310) may have a plurality of designated distances, such as a first distance, a second distance, or a third distance.

[0094] In one embodiment, the receiving circuit (330) can receive light output from the transmitting circuit (310). The receiving circuit (330) can sequentially receive the light output from the transmitting circuit (310). The transmitting circuit (330) can irradiate (irradiate, irradiate, irradiate) a plurality of modulated laser lights having a specified wavelength onto the user's skin in a time-divisional and / or sequential manner. The light irradiated onto the user's skin in a time-divisional and / or sequential manner can pass through the user's skin and be sequentially and / or time-divisionally received by the receiving circuit (330). The present invention is not limited thereto, and the light irradiated onto the user's skin in a time-divisional and / or sequential manner can be reflected onto the user's skin and be sequentially and / or time-divisionally received by the receiving circuit (330).

[0095] According to one embodiment, the processor (320) includes various circuits (e.g., see the detailed description of the processor (120) above) and can control the transmitting circuit (310) and / or the receiving circuit (330). The processor (320) can control a plurality of optical amplifier chips (e.g., 3111, 3112, 3113) included in the semiconductor optical amplifier (311) to output laser light having a wide bandwidth in a time-division manner. The processor (320) can control a plurality of modulated laser lights in the transmitting circuit (310) to output laser light in a time-division manner. The processor (320) can control time synchronization of the receiving circuit (330) so that the modulated plurality of laser lights can be received by the receiving circuit (330) in a time-division manner and / or sequentially. The processor (320) can demodulate the modulated plurality of laser lights received through the receiving circuit (330). The processor (320) may include an amplifier and / or a filter to demodulate a plurality of modulated laser lights received through the receiving circuit (330). However, the present invention is not limited thereto, and the receiving circuit (330) may include an amplifier and / or a filter to demodulate a plurality of modulated laser lights. The processor (320) may convert a photocurrent into a digital signal. The processor (320) may include an analog-to-digital converter (ADC) that converts the photocurrent into a digital signal. However, the present invention is not limited thereto, and the receiving circuit (330) may include an ADC that converts the photocurrent into a digital signal. The processor (320) may include a memory (e.g., the memory (130) of FIG. 1) and / or an interface for communicating with the processor (120) of FIG. 1.

[0096] Referring to FIGS. 3 and 4, the semiconductor optical amplifier (311) may include a plurality of optical amplifier chips (3111, 3112, 3113). Although FIG. 4 illustrates three optical amplifier chips (3111, 3112, 3113), the semiconductor optical amplifier (311) may include four or more optical amplifier chips.

[0097] In one embodiment, each of the plurality of optical amplifier chips can output a laser at a specified wavelength band and a specified power.

[0098] For example, the semiconductor optical amplifier (311) may include at least five optical amplifier chips. At this time, the first optical amplifier chip may output a laser with a first designated wavelength band (e.g., about 2040 to about 2090 nm) and a first designated power (e.g., about 5 mW). The second optical amplifier chip may output a laser with a second designated wavelength band (e.g., about 2090 nm to about 2130 nm) and a second designated power (e.g., about 3 to about 5 mW). The third optical amplifier chip may output a laser with a third designated wavelength band (e.g., about 2130 nm to about 2280 nm) and a third designated power (e.g., about 1 to about 3 mW). The fourth optical amplifier chip can output a laser at a fourth designated wavelength band (e.g., about 2280 nm to about 2330 nm) and a fourth designated power (e.g., about 3 to about 5 mW). The fifth optical amplifier chip can output a laser at a fifth designated wavelength band (e.g., about 2330 nm to about 2380 nm) and a fifth designated power (e.g., about 5 mW).

[0099] For example, the semiconductor optical amplifier (311) may include at least four optical amplifier chips. At this time, the sixth optical amplifier chip may output a laser with a sixth designated wavelength band (e.g., about 2040 to about 2090 nm) and a sixth designated power (e.g., about 5 mW). The seventh optical amplifier chip may output a laser with a seventh designated wavelength band (e.g., about 2090 nm to about 2210 nm) and a seventh designated power (e.g., about 1 to about 3 mW). The eighth optical amplifier chip may output a laser with an eighth designated wavelength band (e.g., about 2310 nm to about 2330 nm) and an eighth designated power (e.g., about 1 to about 3 mW). The ninth optical amplifier chip can output a laser at a ninth designated wavelength band (e.g., about 2330 nm to about 2380 nm) and a ninth designated power (e.g., about 5 mW).

[0100] In one embodiment, the entire wavelength band output by the semiconductor optical amplifier (311) can be divided to output lasers with different powers according to the designated wavelength band.

[0101] FIG. 5 is a graph showing the density of light according to wavelength after each of a plurality of optical amplifier chips included in a semiconductor optical amplifier (311) irradiates water with a laser output at the same level of power.

[0102] Referring to Fig. 5, when each of the plurality of optical amplifier chips outputs a laser with the same level of power, for example, in the wavelength band of about 2130 nm to about 2280 nm, even if the laser is output to water, the power of the laser is not attenuated because water relatively does not absorb light well. In the wavelength band of about 2040 nm to about 2090 nm or about 2330 nm to about 2380 nm, the power of the laser is attenuated because water relatively absorbs light well.

[0103] In Fig. 5, the x-axis represents the wavelength band, and the y-axis can represent the normalized light intensity after light passes through water. Fig. 5 can represent the attenuation by water according to the wavelength band.

[0104] A semiconductor optical amplifier (311) according to one embodiment of the present disclosure can output lasers (e.g., laser light) having different powers according to a specified wavelength band by using a plurality of optical amplifier chips.

[0105] For example, an optical amplifier chip that outputs a wavelength band of about 2040 to about 2090 nm or about 2330 to about 2380 nm, in which the laser power attenuation due to water is relatively large, can output a laser with a power level higher than a specified level. An optical amplifier chip that outputs a wavelength band of about 2130 nm to about 2280 nm, in which the laser power attenuation due to water is relatively small, can output a laser with a power level lower than a specified level.

[0106] FIG. 6 is a graph showing the power of a laser for each wavelength band output from a semiconductor optical amplifier (311) including at least five optical amplifier chips according to one embodiment of the present disclosure.

[0107] In Fig. 6, the x-axis may represent wavelength, and the y-axis may represent the intensity of the light source (unit: mW). Fig. 6 may represent the intensity of the light source according to wavelength of the present invention.

[0108] In one embodiment, the semiconductor optical amplifier (311) can output a laser at at least one designated wavelength band and at at least one designated power.

[0109] In one embodiment, each of the plurality of optical amplifier chips can output a laser at a specified wavelength band and a specified power.

[0110] In FIG. 6, the semiconductor optical amplifier (311) may include at least five optical amplifier chips.

[0111] In one embodiment, the semiconductor optical amplifier (311) can divide the entire band into the number of optical amplifier chips and output the laser with different power for each divided band. For example, the semiconductor optical amplifier (311) can output a laser with a wavelength band of about 2000 nm to about 2400 nm. A semiconductor optical amplifier (311) including five optical amplifier chips can divide the wavelength band of about 2000 nm to about 2400 nm into five.

[0112] In one embodiment, the semiconductor optical amplifier (311) can output a laser with a power level lower than a specified level in a wavelength band where the power attenuation due to light absorption by water is less than a specified attenuation value, and can output a laser with a power level higher than a specified level in a wavelength band where the power attenuation due to light absorption by water is greater than the specified attenuation value.

[0113] In one embodiment, the semiconductor optical amplifier (311) can output lasers of multiple designated wavelength bands simultaneously or in a time-division manner.

[0114] In one embodiment, a plurality of optical amplifier chips included in the semiconductor optical amplifier (311) can simultaneously or time-divisionally output lasers of a plurality of designated wavelength bands.

[0115] In one embodiment, the first optical amplifier chip can output a laser at a first designated wavelength band (about 2040 nm to about a nm) (e.g., about 2040 nm to about 2090 nm) and a first designated power (e.g., about 5 mW). The second optical amplifier chip can output a laser at a second designated wavelength band (about 'a' nm to about 'b' nm) (e.g., about 2090 nm to about 2130 nm) and a second designated power (e.g., about 3 to about 5 mW). The third optical amplifier chip can output a laser at a third designated wavelength band (about 'b' nm to about 'c' nm) (e.g., about 2130 nm to about 2280 nm) and a third designated power (e.g., about 1 to about 3 mW). The fourth laser gain chip can output a laser at a fourth designated wavelength band (about 'c' nm to about 'd' nm) (e.g., about 2280 nm to about 2330 nm) and a fourth designated power (e.g., about 3 to about 5 mW). The fifth optical amplifier chip can output a laser at a fifth designated wavelength band (about 'd' nm to about 2380 nm) (e.g., about 2330 nm to about 2380 nm) and a fifth designated power (e.g., about 5 mW).

[0116] In one embodiment, the semiconductor optical amplifier (311) can control one of the plurality of optical amplifier chips to output a laser at a first designated wavelength band (about 2040 nm to about 'a' nm) (e.g., about 2040 nm to about 2090 nm) and a first designated power (e.g., about 5 mW). The semiconductor optical amplifier (311) can control one of the plurality of optical amplifier chips to output a laser at a second designated wavelength band (about 'a' nm to about 'b' nm) (e.g., about 2090 nm to about 2130 nm) and a second designated power (e.g., about 3 to about 5 mW). The semiconductor optical amplifier (311) can control one of the plurality of optical amplifier chips to output a laser at a third designated wavelength band (about 'b' nm to about 'c' nm) (e.g., about 2130 nm to about 2280 nm) and a third designated power (e.g., about 1 to about 3 mW). The semiconductor optical amplifier (311) can control one of the plurality of optical amplifier chips to output a laser at a fourth designated wavelength band (about 'c' nm to about 'd' nm) (e.g., about 2280 nm to about 2330 nm) and a fourth designated power (e.g., about 3 to about 5 mW). The semiconductor optical amplifier (311) can control one of the plurality of optical amplifier chips to output a laser at a fifth designated wavelength band (about 'd' nm to about 2380 nm) (e.g., about 2330 nm to about 2380 nm) and a fifth designated power (e.g., about 5 mW).

[0117] In one embodiment, the semiconductor optical amplifier (311) can output a laser at a first designated wavelength band (about 2040 nm to about 'a' nm) (e.g., about 2040 nm to about 2090 nm) and a first designated power (e.g., about 5 mW). The semiconductor optical amplifier (311) can output a laser at a second designated wavelength band (about 'a' nm to about 'b' nm) (e.g., about 2090 nm to about 2130 nm) and a second designated power (e.g., about 3 to about 5 mW). The semiconductor optical amplifier (311) can output a laser at a third designated wavelength band (about 'b' nm to about 'c' nm) (e.g., about 2130 nm to about 2280 nm) and a third designated power (e.g., about 1 to about 3 mW). The semiconductor optical amplifier (311) can output a laser with a fourth designated wavelength band (about 'c' nm to about 'd' nm) (e.g., about 2280 nm to about 2330 nm) and a fourth designated power (e.g., about 3 to about 5 mW). The semiconductor optical amplifier (311) can output a laser with a fifth designated wavelength band (about 'd' nm to about 2380 nm) (e.g., about 2330 nm to about 2380 nm) and a fifth designated power (e.g., about 5 mW).

[0118] In one embodiment, the semiconductor optical amplifier (311) can be controlled, under the control of the processor (320), to cause one of the plurality of optical amplifier chips to output a laser at a first designated wavelength band (about 2040 nm to about 'a' nm) (e.g., about 2040 nm to about 2090 nm) and a first designated power (e.g., about 5 mW). The semiconductor optical amplifier (311) can be controlled, under the control of the processor (320), to cause one of the plurality of optical amplifier chips to output a laser at a second designated wavelength band (about 'a' nm to about 'b' nm) (e.g., about 2090 nm to about 2130 nm) and a second designated power (e.g., about 3 to about 5 mW). The semiconductor optical amplifier (311) can, under the control of the processor (320), control one of the plurality of optical amplifier chips to output a laser with a third designated wavelength band (about 'b' nm to about 'c' nm) (e.g., about 2130 nm to about 2280 nm) and a third designated power (e.g., about 1 to about 3 mW). The semiconductor optical amplifier (311) can, under the control of the processor (320), control one of the plurality of optical amplifier chips to output a laser with a fourth designated wavelength band (about 'c' nm to about 'd' nm) (e.g., about 2280 nm to about 2330 nm) and a fourth designated power (e.g., about 3 to about 5 mW). The semiconductor optical amplifier (311) can be controlled to output a laser at a fifth designated wavelength band (about 'd' nm to about 2380 nm) (e.g., about 2330 nm to about 2380 nm) and a fifth designated power (e.g., about 5 mW) by controlling one of the plurality of optical amplifier chips.

[0119] FIG. 7 is a graph showing the power of a laser for each wavelength band output from a semiconductor optical amplifier (311) including at least four optical amplifier chips according to one embodiment of the present disclosure.

[0120] In Fig. 7, the x-axis may represent the wavelength, and the y-axis may represent the intensity of the light source (unit: mW). Fig. 7 may represent the intensity of the light source according to the wavelength of the present invention.

[0121] In one embodiment, the semiconductor optical amplifier (311) can divide the entire band by the number of optical amplifier chips and output the laser with different power for each divided band. For example, the semiconductor optical amplifier (311) can output a laser with a wavelength band of about 2000 nm to about 2400 nm. A semiconductor optical amplifier (311) including four optical amplifier chips can divide the wavelength band of about 2000 nm to about 2400 nm into four.

[0122] In one embodiment, the semiconductor optical amplifier (311) can output a laser with a power level lower than a specified level in a wavelength band where the power attenuation due to light absorption by water is less than a specified attenuation value, and can output a laser with a power level higher than a specified level in a wavelength band where the power attenuation due to light absorption by water is greater than the specified attenuation value.

[0123] In one embodiment, the semiconductor optical amplifier (311) can output a laser at at least one designated wavelength band and at at least one designated power.

[0124] In one embodiment, each of the plurality of optical amplifier chips can output a laser at a specified wavelength band and a specified power.

[0125] In FIG. 7, the semiconductor optical amplifier (311) may include at least four optical amplifier chips.

[0126] In one embodiment, the semiconductor optical amplifier (311) can output lasers of multiple designated wavelength bands simultaneously or in a time-division manner.

[0127] In one embodiment, a plurality of optical amplifier chips included in the semiconductor optical amplifier (311) can simultaneously or time-divisionally output lasers of a plurality of designated wavelength bands.

[0128] In one embodiment, the sixth optical amplifier chip can output a laser at a sixth designated wavelength band (about 2040 nm to about 'e' nm) (e.g., about 2040 nm to about 2090 nm) and a sixth designated power (e.g., about 5 mW). The seventh optical amplifier chip can output a laser at a seventh designated wavelength band (about 'e' nm to about 'f' nm) (e.g., about 2090 nm to about 2210 nm) and a seventh designated power (e.g., about 1 to about 3 mW). The eighth optical amplifier chip can output a laser at an eighth designated wavelength band (about 'f' nm to about 'g' nm) (e.g., about 2210 nm to about 2330 nm) and an eighth designated power (e.g., about 1 to about 3 mW). The ninth optical amplifier chip can output a laser at a ninth designated wavelength band (e.g., about 'g' nm to about 2380 nm) (e.g., about 2330 nm to about 2380 nm) and a ninth designated power (e.g., about 5 mW).

[0129] In one embodiment, the semiconductor optical amplifier (311) can control one of the plurality of optical amplifier chips to output a laser at a sixth designated wavelength band (about 2040 nm to 'e' nm) (e.g., about 2040 nm to about 2090 nm) and a sixth designated power (e.g., about 5 mW). The semiconductor optical amplifier (311) can control one of the plurality of optical amplifier chips to output a laser at a seventh designated wavelength band (about 'e' nm to about 'f' nm) (e.g., about 2090 nm to about 2210 nm) and a seventh designated power (e.g., about 1 to about 3 mW). The semiconductor optical amplifier (311) can control one of the plurality of optical amplifier chips to output a laser at an eighth designated wavelength band (about 'f' nm to about 'g' nm) (e.g., about 2210 nm to about 2330 nm) and an eighth designated power (e.g., about 1 to about 3 mW). The semiconductor optical amplifier (311) can control one of the plurality of optical amplifier chips to output a laser at a ninth designated wavelength band (about 'g' nm to about 2030 nm) (e.g., about 2330 nm to about 2380 nm) and a ninth designated power (e.g., about 5 mW).

[0130] In one embodiment, the semiconductor optical amplifier (311) can output a laser at a sixth designated wavelength band (about 2040 nm to about 'e' nm) (e.g., about 2040 nm to about 2090 nm) and a sixth designated power (e.g., about 5 mW). The semiconductor optical amplifier (311) can output a laser at a seventh designated wavelength band (about 'e' nm to about 'f' nm) (e.g., about 2090 nm to about 2210 nm) and a seventh designated power (e.g., about 1 to about 3 mW). The semiconductor optical amplifier (311) can output a laser at an eighth designated wavelength band (about 'f' nm to about 'g' nm) (e.g., about 2210 nm to about 2330 nm) and an eighth designated power (e.g., about 1 to about 3 mW). The semiconductor optical amplifier (311) can output a laser at a ninth designated wavelength band (about 'g' nm to about 2030 nm) (e.g., about 2330 nm to about 2380 nm) and a ninth designated power (e.g., about 5 mW).

[0131] In one embodiment, the semiconductor optical amplifier (311) can be controlled, under the control of the processor (320), to cause one of the plurality of optical amplifier chips to output a laser at a sixth designated wavelength band (about 2040 nm to 'e' nm) (e.g., about 2040 nm to about 2090 nm) and a sixth designated power (e.g., about 5 mW). The semiconductor optical amplifier (311) can be controlled, under the control of the processor (320), to cause one of the plurality of optical amplifier chips to output a laser at a seventh designated wavelength band (about 'e' nm to about 'f' nm) (e.g., about 2090 nm to about 2210 nm) and a seventh designated power (e.g., about 1 to about 3 mW). The semiconductor optical amplifier (311) can control one of the plurality of optical amplifier chips to output a laser at an eighth designated wavelength band (about 'f' nm to about 'g' nm) (e.g., about 2210 nm to about 2330 nm) and an eighth designated power (e.g., about 1 to about 3 mW) under the control of the processor (320). The semiconductor optical amplifier (311) can control one of the plurality of optical amplifier chips to output a laser at a ninth designated wavelength band (about 'g' nm to about 2030 nm) (e.g., about 2330 nm to about 2380 nm) and a ninth designated power (e.g., about 5 mW).

[0132] FIG. 8 is a graph showing the power of a laser by wavelength band output from a semiconductor optical amplifier (311) including at least three optical amplifier chips according to one embodiment of the present disclosure.

[0133] In Fig. 8, the x-axis may represent the wavelength, and the y-axis may represent the intensity of the light source (unit: mW). Fig. 8 may represent the intensity of the light source according to the wavelength of the present invention.

[0134] In one embodiment, the semiconductor optical amplifier (311) can divide the entire band into the number of optical amplifier chips and output the laser with different power for each divided band. For example, the semiconductor optical amplifier (311) can output a laser with a wavelength band of about 2000 nm to about 2400 nm. A semiconductor optical amplifier (311) including three optical amplifier chips can divide the wavelength band of about 2000 nm to about 2400 nm into three.

[0135] In one embodiment, the semiconductor optical amplifier (311) can output a laser with a power level lower than a specified level in a wavelength band where the power attenuation due to light absorption by water is less than a specified attenuation value, and can output a laser with a power level higher than a specified level in a wavelength band where the power attenuation due to light absorption by water is greater than the specified attenuation value.

[0136] In one embodiment, the semiconductor optical amplifier (311) can output a laser at at least one designated wavelength band and at at least one designated power.

[0137] In one embodiment, each of the plurality of optical amplifier chips can output a laser at a specified wavelength band and a specified power.

[0138] In FIG. 8, the semiconductor optical amplifier (311) may include at least three optical amplifier chips.

[0139] In one embodiment, the semiconductor optical amplifier (311) can output lasers of multiple designated wavelength bands simultaneously or in a time-division manner.

[0140] In one embodiment, a plurality of optical amplifier chips included in the semiconductor optical amplifier (311) can simultaneously or time-divisionally output lasers of a plurality of designated wavelength bands.

[0141] In one embodiment, the tenth optical amplifier chip can output a laser at a tenth designated wavelength band (about 2040 nm to about 'h' nm) (e.g., about 2040 nm to about 2090 nm) and a tenth designated power (e.g., about 5 mW). The eleventh optical amplifier chip can output a laser at a eleventh designated wavelength band (about 'h' nm to about i nm) (e.g., about 2090 nm to about 2330 nm) and an eleventh designated power (e.g., about 1 mW to about 3 mW). The twelfth optical amplifier chip can output a laser at a twelfth designated wavelength band (about ''' nm to about 2380 nm) (e.g., about 2330 nm to about 2380 nm) and a twelfth designated power (e.g., about 5 mW).

[0142] In one embodiment, the semiconductor optical amplifier (311) can control one of the plurality of optical amplifier chips to output a laser at a tenth designated wavelength band (about 2040 nm to about 'h' nm) (e.g., about 2040 nm to about 2090 nm) and a tenth designated power (e.g., about 5 mW). The semiconductor optical amplifier (311) can control one of the plurality of optical amplifier chips to output a laser at an eleventh designated wavelength band (about 'h' nm to about 'i' nm) (e.g., about 2090 nm to about 2330 nm) and an eleventh designated power (e.g., about 1 to about 3 mW). The semiconductor optical amplifier (311) controls one of the plurality of optical amplifier chips so that the 12th optical amplifier chip can output a laser at a 12th designated wavelength band (about 'i' nm to about 2380 nm) (e.g., about 2330 nm to about 2380 nm) and a 12th designated power (e.g., about 5 mW).

[0143] In one embodiment, the semiconductor optical amplifier (311) can output a laser at a tenth designated wavelength band (about 2040 nm to about 'h' nm) (e.g., about 2040 nm to about 2090 nm) and a tenth designated power (e.g., about 5 mW). The semiconductor optical amplifier (311) can output a laser at a eleventh designated wavelength band (about 'h' nm to about 'i' nm) (e.g., about 2090 nm to about 2330 nm) and an eleventh designated power (e.g., about 1 to about 3 mW). The semiconductor optical amplifier (311) can output a laser at a twelfth designated wavelength band (about 'i' nm to about 2380 nm) (e.g., about 2330 nm to about 2380 nm) and a twelfth designated power (e.g., about 5 mW).

[0144] In one embodiment, the semiconductor optical amplifier (311) can be controlled, under the control of the processor (320), to cause one of the plurality of optical amplifier chips to output a laser at a tenth designated wavelength band (about 2040 nm to 'h' nm) (e.g., about 2040 nm to about 2090 nm) and a tenth designated power (e.g., about 5 mW). The semiconductor optical amplifier (311) can be controlled, under the control of the processor (320), to cause one of the plurality of optical amplifier chips to output a laser at an eleventh designated wavelength band (about 'h' nm to about 'i' nm) (e.g., about 2090 nm to about 2330 nm) and an eleventh designated power (e.g., about 1 to about 3 mW). The semiconductor optical amplifier (311) can be controlled to output a laser at a 12th designated wavelength band (about 'i' nm to about 2380 nm) (e.g., about 2330 nm to about 2380 nm) and a 12th designated power (e.g., about 5 mW) by the 12th optical amplifier chip.

[0145] FIG. 9 is a flowchart illustrating a laser output method of an electronic device (201) according to one embodiment of the present disclosure.

[0146] In one embodiment, the electronic device (201) may, in operation 901, output laser lights using two or more optical amplifier chips (e.g., 3111, 3112, 3113) each having a different wavelength band and output intensity.

[0147] In one embodiment, the electronic device (201) can, in operation 903, modulate the output laser light to have a designated wavelength by causing it to pass through a fixed array DBR grating (312). The designated wavelength can have a shorter wavelength than the wavelength of the laser light output from the semiconductor optical amplifier (311).

[0148] In one embodiment, the electronic device (201) may, in operation 905, cause modulated laser lights to be irradiated onto the skin via the output coupler (315).

[0149] In one embodiment, the electronic device (201) may include a semiconductor optical amplifier (311) that divides an outputtable wavelength band and outputs a plurality of laser lights having a designated wavelength band and a designated power; a fixed array distributed Bragg reflector grating (312) that changes the wavelengths of the plurality of laser lights and outputs the plurality of laser lights having the changed wavelengths; a modulator (313) that modulates the plurality of laser lights having the changed wavelengths; a monitoring circuit (314) that determines whether the modulated plurality of laser lights are output according to the designated power and the designated wavelength; and an output coupler (315) that adjusts an output direction and / or an angle of the modulated plurality of laser lights and outputs the modulated plurality of laser lights to the outside of the electronic device (201).

[0150] In one embodiment, the semiconductor optical amplifier (311) includes a plurality of optical amplifier chips and can time-divisionally output or generate a plurality of laser lights having a wide bandwidth.

[0151] In one embodiment, the semiconductor optical amplifier (311) may include a first optical amplifier chip that outputs a laser at a first designated wavelength band and a first designated power; a second optical amplifier chip that outputs a laser at a second designated wavelength band and a second designated power; a third optical amplifier chip that outputs a laser at a third designated wavelength band and a third designated power; and a fourth optical amplifier chip that outputs a laser at a fourth designated wavelength band and a fourth designated power.

[0152] In one embodiment, the semiconductor optical amplifier (311) may further include a fifth optical amplifier chip that outputs a laser at a fifth designated wavelength band and a fifth designated power.

[0153] In one embodiment, the semiconductor optical amplifier (311) can output a laser at a specified power, with a wavelength band having a power attenuation due to light absorption by water less than a specified attenuation value having a level lower than a specified level.

[0154] In one embodiment, the semiconductor optical amplifier (311) can output a laser at a specified power, with a wavelength band having a power attenuation due to light absorption by water greater than a specified attenuation value having a level higher than a specified level.

[0155] In one embodiment, the semiconductor optical amplifier (311) can output an outputtable wavelength band by dividing it by the number of optical amplifier chips included in the semiconductor optical amplifier (311).

[0156] In one embodiment, the modulator (313) may include a lock-in amplifier and / or a low pass filter.

[0157] In one embodiment, the monitoring circuit (314) may include an edge illuminated photodiode, a Mach-Zehnder interferometer (MZI) sensor, a ring resonator, a line coupling, and / or a splitter.

[0158] In one embodiment, a monitoring circuit (314) may be connected between an output coupler (315) and a modulator (313).

[0159] In one embodiment, the electronic device (201) further includes a receiving circuit including a plurality of photodetectors, each of the plurality of photodetectors being spaced a first designated distance from the output coupler (315).

[0160] In one embodiment, the electronic device (201) may further include a processor. The processor may control the intensity and wavelength of light output from the semiconductor optical amplifier (311) based on information received from the monitoring circuit (314).

[0161] In one embodiment, the electronic device (201) may include a transmitter circuit; a receiver circuit; and a processor, wherein the transmitter circuit may include a semiconductor optical amplifier (311) that divides an outputtable wavelength band and outputs a plurality of laser lights having a designated wavelength band and a designated power; a fixed array distributed Bragg reflector grating (312) that changes the wavelengths of the plurality of laser lights and outputs the plurality of laser lights having the changed wavelengths; a modulator (313) that modulates the plurality of laser lights having the changed wavelengths; a monitoring circuit (314) that determines whether the modulated plurality of laser lights are output according to the designated power and the designated wavelength; and an output coupler (315) that adjusts the output direction and / or angle of the modulated plurality of laser lights and outputs the modulated plurality of laser lights to the outside of the electronic device (201).

[0162] In one embodiment, the semiconductor optical amplifier (311) includes a plurality of optical amplifier chips and can time-divisionally output or generate a plurality of laser lights having a wide bandwidth.

[0163] In one embodiment, the semiconductor optical amplifier (311) can output a laser at a specified power, with a wavelength band having a power attenuation due to light absorption by water less than a specified attenuation value having a level lower than a specified level.

[0164] In one embodiment, the semiconductor optical amplifier (311) can output a laser at a specified power, with a wavelength band having a power attenuation due to light absorption by water greater than a specified attenuation value having a level higher than a specified level.

[0165] In one embodiment, the semiconductor optical amplifier (311) can output an outputtable wavelength band by dividing it by the number of optical amplifier chips included in the semiconductor optical amplifier (311).

[0166] In one embodiment, the electronic device (201) may include a case having a transmitting circuit and a receiving circuit disposed on the rear side; a display disposed on the front side of the case; and a band connected to the case to allow the electronic device (201) to be worn on the user's wrist.

[0167] In one embodiment, the back of the case may have at least a portion that contacts the user when the electronic device (201) is worn on the user via the band.

[0168] In one embodiment, the rear of the case may expose at least a portion of the output coupler (315) and at least a portion of the receiver circuitry.

[0169] Electronic devices according to the various embodiments disclosed in this document may take various forms. Electronic devices may include, for example, portable communication devices (e.g., smartphones), computer devices, portable multimedia devices, portable medical devices, cameras, wearable devices, or home appliances. Electronic devices according to the embodiments of this document are not limited to the aforementioned devices.

[0170] The various embodiments of this document and the terminology used therein are not intended to limit the technical features described in this document to specific embodiments, but should be understood to include various modifications, equivalents, or substitutes of the embodiments. In connection with the description of the drawings, similar reference numerals may be used for similar or related components. The singular form of a noun corresponding to an item may include one or more of the items, unless the context clearly indicates otherwise. In this document, each of the phrases "A or B", "at least one of A and B", "at least one of A or B", "A, B, or C", "at least one of A, B, and C", and "at least one of A, B, or C" can include any one of the items listed together in the corresponding phrase among those phrases, or all possible combinations thereof. Terms such as "first," "second," or "first" or "second" may be used merely to distinguish one component from another, and do not limit the components in any other respect (e.g., importance or order). When a component (e.g., a first component) is referred to as "coupled" or "connected" to another (e.g., a second component), with or without the terms "functionally" or "communicatively," it means that the component can be connected to the other component directly (e.g., wired), wirelessly, or through a third component.

[0171] The term "module" used in various embodiments of this document may include a unit implemented in hardware, software, or firmware, and may be used interchangeably with terms such as logic, logic block, component, or circuit. A module may be an integral component, or a minimum unit or part of such a component that performs one or more functions. For example, according to one embodiment, a module may be implemented in the form of an application-specific integrated circuit (ASIC).

[0172] Various embodiments of the present document may be implemented as software (e.g., a program (140)) including one or more instructions stored in a storage medium (e.g., an internal memory (136) or an external memory (138)) readable by a machine (e.g., an electronic device (101)). For example, a processor (e.g., a processor (120)) of the machine (e.g., an electronic device (101)) may call at least one instruction among the one or more instructions stored from the storage medium and execute it. This enables the machine to operate to perform at least one function according to the at least one called instruction. The one or more instructions may include code generated by a compiler or code executable by an interpreter. The machine-readable storage medium may be provided in the form of a non-transitory storage medium. Here, 'non-transitory' simply means that the storage medium is a tangible device and does not contain signals (e.g., electromagnetic waves), and the term does not distinguish between cases where data is stored semi-permanently or temporarily on the storage medium.

[0173] According to one embodiment, the method according to various embodiments disclosed in this document may be provided as a computer program product. The computer program product may be traded between sellers and buyers as a product. The computer program product may be distributed in the form of a device-readable storage medium (e.g., compact disc read-only memory (CD-ROM)) or may be provided through an application store (e.g., Play Store). TM ) or directly between two user devices (e.g., smart phones), online distribution (e.g., downloading or uploading). In the case of online distribution, at least a portion of the computer program product may be at least temporarily stored or temporarily created in a machine-readable storage medium, such as the memory of a manufacturer's server, an application store's server, or an intermediary server.

[0174] According to various embodiments, each component (e.g., a module or a program) of the above-described components may include one or more entities, and some of the entities may be separated and arranged in other components. According to various embodiments, one or more components or operations of the aforementioned components may be omitted, or one or more other components or operations may be added. Alternatively or additionally, a plurality of components (e.g., a module or a program) may be integrated into a single component. In such a case, the integrated component may perform one or more functions of each of the plurality of components identically or similarly to those performed by the corresponding component among the plurality of components prior to the integration. According to various embodiments, the operations performed by a module, program, or other component may be executed sequentially, in parallel, iteratively, or heuristically, or one or more of the operations may be executed in a different order, omitted, or one or more other operations may be added.

Claims

1. In electronic devices, A semiconductor optical amplifier that divides an outputtable wavelength band and outputs a plurality of laser lights having a specified wavelength band and a specified power; A fixed array distributed Bragg reflector grating (DBR grating) that changes the wavelength of the plurality of laser lights and outputs a plurality of laser lights having the changed wavelength; and An electronic device including an output coupler that adjusts the output direction and / or angle of the modulated plurality of laser lights and outputs the modulated plurality of laser lights to the outside of the electronic device.

2. In paragraph 1, The above semiconductor optical amplifier Contains multiple optical amplifier chips, An electronic device that time-divisionally outputs or generates a plurality of laser lights having the above-mentioned broadband.

3. In paragraph 1, The above semiconductor optical amplifier A first optical amplifier chip outputting a laser with a first designated wavelength band and a first designated power; A second optical amplifier chip outputting a laser with a second designated wavelength band and a second designated power; A third optical amplifier chip outputting a laser with a third designated wavelength band and a third designated power; and An electronic device comprising a fourth optical amplifier chip that outputs a laser with a fourth designated wavelength band and a fourth designated power.

4. In paragraph 3, The above semiconductor optical amplifier An electronic device further comprising a fifth optical amplifier chip outputting a laser with a fifth designated wavelength band and a fifth designated power.

5. In paragraph 1, The above semiconductor optical amplifier An electronic device that outputs a laser at a specified power, wherein wavelength bands in which power attenuation due to light absorption by water is less than a specified attenuation value have a level lower than a specified level.

6. In paragraph 1, The above semiconductor optical amplifier An electronic device that outputs a laser at a specified power, wherein wavelengths in which the power attenuation due to light absorption by water is greater than a specified attenuation value have a level higher than a specified level.

7. In paragraph 1, The above semiconductor optical amplifier An electronic device that divides the outputtable wavelength band into multiple optical amplifier chips included in the semiconductor optical amplifier and outputs the divided signal.

8. In paragraph 1, It further includes a modulator (313) that modulates a plurality of laser lights having the above-mentioned changed wavelengths, The above modulator is An electronic device comprising a lock-in amplifier and / or a low pass filter.

9. In paragraph 1, It further includes a monitoring circuit for checking whether the modulated plurality of laser lights are output according to the specified power and specified wavelength, The above monitoring circuit An electronic device comprising an edge illuminated photodiode, a Mach-Zehnder interferometer (MZI) sensor, a ring resonator, a line coupling, and / or a splitter.

10. In paragraph 9, The above monitoring circuit An electronic device connected between the above output coupler and the above modulator.

11. In paragraph 1, Further comprising a receiving circuit including a plurality of photodetectors, An electronic device wherein each of said plurality of photodetectors is spaced a first designated distance from said output coupler.

12. In paragraph 1, further comprising at least one processor comprising a processing circuit, An electronic device in which at least one processor controls the intensity and wavelength of light output from the semiconductor optical amplifier based on information received from the monitoring circuit.

13. In paragraph 1, A case in which the above transmitting circuit and the above receiving circuit are placed at the rear; A display placed on the front of the case; and An electronic device further comprising a band connected to said case to allow said electronic device to be worn on a user's wrist.

14. In paragraph 13, The back of the above case is An electronic device that is at least partially in contact with the user through the band, based on the electronic device being worn by the user.

15. In paragraph 13, The back of the above case is An electronic device wherein at least a portion of said output coupler and at least a portion of said receiving circuit are exposed.

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