Thin film deposition apparatus and thin film deposition method

Abstract

Disclosed is a thin film deposition apparatus. When a thin film deposition is completed, a rotating mechanism drives a heating tray to carry a substrate to rotate together from a first position to a second position; after the rotation is completed, the heating tray is separated from the substrate, and the substrate is supported by a support ring; the rotating mechanism drives the heating tray to rotate to a third position, and the support ring and the substrate remain in the second position; after the heating tray contacts a substrate, a next thin film deposition is performed. The present invention compensates for uneven thickness of a thin film deposited on a substrate, realizing uniformity and stability of thin film deposition for a PECVD stack structure, and prevents the phenomenon of an etched-through hole in the thin film deposited on the substrate deviating from a vertical direction during a subsequent etching process, thereby further ensuring the performance stability of a semiconductor device.

Description

Thin film deposition device and thin film deposition method Technical Field

[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a thin film deposition device and a thin film deposition method. Background Art

[0002] In a vacuum processing chamber using plasma-enhanced chemical vapor deposition (PECVD), a stack of layers of different materials is deposited onto a substrate. The substrate is placed into the vacuum processing chamber, and a first process gas is introduced to form a first layer of a first material on the substrate. A plasma purge and gas purge are then performed, followed by a second process gas introduced to form a second layer of a second material on the substrate. The plasma purge and gas purge are repeated, and the first and second materials are stacked and deposited onto the substrate to form a thin film with a layer stack. Three-dimensional (3D) memory can be fabricated using a layer stack of alternating thin film materials deposited on a substrate.

[0003] Currently, 3D memory uses alternating layers of oxide and nitride films to store data in a three-dimensional structure through related processes. These stacked structures can include multiple layers of the first material and the second material, for example, more than 300 or even 500 layers of continuous stacking.

[0004] Specifically, in some cases, the stack structure of the first material and the second material in the thin film material of the 3D storage stack can be oxide and silicon, silicon and doped silicon, or silicon and nitride. Accordingly, the thin film materials of the 3D storage stack of these material combinations can mostly be applied to BiCS (Bit-Cost Scalable), TCAT (Terabit Cell Array Transistor) or other 3D storage structures. In addition, the stack structure of the first material and the second material can also be other material combinations, and the order in which the first material and the second material layers are deposited on the substrate can also be reversed.

[0005] However, the existing PECVD equipment has the following problems:

[0006] 1. As the number of stacked layers on the substrate surface increases, the thickness of the film increases accordingly, which directly leads to the deterioration of the uniformity between the layers of the film and the uniformity of the total film after stacking. As a result, the vertical structure cannot be obtained in the subsequent etching process, thereby limiting the continuous increase in the number of film layers during the film stacking process.

[0007] Under current equipment conditions, when more than 200 layers of thin film are deposited, the uniformity and quality of the thin film degrade. During the continuous stacking of different types of thin films, the deviation of the fixed position will continue to be amplified, causing the uniformity of the substrate film to deviate from the controllable range, making it impossible for the subsequent etching process to achieve the accuracy of through-hole etching, resulting in the etched through-hole deviating from the vertical direction during the etching process, which further leads to the failure of the semiconductor device.

[0008] 2. Deformation of the gas showerhead caused by long-term use or the extraction of exhaust gas by an external air pump leads to uneven distribution of process gas supplied by the gas supply assembly, resulting in deviations in film thickness during thin film deposition. This in turn causes the etched through-hole to deviate from the vertical direction during the etching process, further leading to failure of the semiconductor device.

[0009] 3. When depositing thin films using the traditional PECVD method, the heating tray needs to be fixed to ensure its flatness. However, when the heating tray is fixed, the temperature distribution of the substrate will form a fixed pattern, resulting in uneven heating of the substrate. This in turn causes the etched through-holes to deviate from the vertical direction during the etching process, further leading to failure of the semiconductor device.

[0010] In summary, it is necessary to propose a new thin film deposition device and method to solve the above problems.

[0011] Summary of the Invention

[0012] In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a thin film deposition device and a thin film deposition method, so as to solve the problem of poor uniformity of thin films deposited on substrates in the prior art.

[0013] To achieve the above and other related purposes, the present invention provides a thin film deposition device, comprising:

[0014] a processing chamber for performing thin film deposition;

[0015] A heating tray for carrying and heating the substrate, wherein the heating tray is configured as a substrate supporting portion with a central protrusion and an edge portion for placing a support ring;

[0016] A supporting mechanism, comprising a supporting ring disposed around the substrate supporting portion and a supporting shaft for supporting the supporting ring;

[0017] A lifting mechanism, used for driving the support shaft to move up and down and / or driving the heating tray to move up and down;

[0018] A rotating mechanism, used for driving the heating tray to rotate;

[0019] The thin film deposition device is configured as follows: after a thin film deposition is completed, the rotating mechanism drives the heating tray to rotate the substrate from a first position to a second position; after the rotation is completed, the heating tray is separated from the substrate, and the substrate is supported by the support ring; the rotating mechanism drives the heating tray to rotate to a third position, while the support ring and the substrate remain in the second position; the next thin film deposition is carried out after the heating tray contacts the substrate.

[0020] Preferably, the third position is the same as the first position.

[0021] Preferably, the inner diameter of the support ring is larger than the outer diameter of the substrate supporting portion.

[0022] Preferably, the support shaft is non-fixedly connected to the support ring.

[0023] Preferably, the height difference between the surfaces of the substrate supporting portion and the edge portion is the same as the thickness of the supporting ring.

[0024] Preferably, the support ring has a thickness of 0.3-0.7 mm.

[0025] Preferably, the support ring is fixedly connected to the support shaft.

[0026] Preferably, a surface height difference between the substrate supporting portion and the edge portion is 1.5-2.9 mm.

[0027] Preferably, the support ring has a thickness of 0.3-0.7 mm.

[0028] Preferably, when the rotating mechanism drives the heating tray to rotate together with the substrate, the supporting ring is kept in a non-contact state with the heating tray and the substrate.

[0029] The present invention also provides a thin film deposition method, comprising:

[0030] placing a substrate in a processing chamber and depositing a thin film of a first thickness on the substrate;

[0031] The heating tray drives the substrate to rotate from the first position to the second position;

[0032] The heating tray is separated from the substrate, the support ring supports the substrate, and the heating tray rotates from the second position to the third position;

[0033] The heated tray is brought into contact with the substrate and a thin film of a second thickness is deposited.

[0034] Preferably, the first position is the same as the third position.

[0035] Preferably, the heating tray is separated from the substrate by a lifting mechanism driving the heating tray downward.

[0036] Preferably, the heating tray is separated from the substrate by a lifting mechanism driving the heating tray downward and driving the support shaft upward.

[0037] Preferably, the heating tray is separated from the substrate by a lifting mechanism driving the support shaft to rise.

[0038] Preferably, the support shaft and the support ring are not fixedly connected, and the support and separation between the two are achieved through relative movement.

[0039] Preferably, when a thin film is deposited on a substrate, the upper surface of the support ring is in contact with the substrate, and the lower surface of the support ring is in contact with the heating tray.

[0040] Preferably, when the heating tray drives the substrate to rotate, the support ring and the support shaft are in a separated state, and the support ring is driven by the heating tray to rotate together.

[0041] Preferably, the support ring is fixedly connected to the support shaft, and the support ring is driven to rise and fall by the support shaft.

[0042] Preferably, after the support shaft drives the support ring to descend to a position where it is not in contact with the substrate and the heating tray, the heating tray drives the substrate to rotate while the support ring does not rotate.

[0043] The application of this invention solves the problem of poor uniformity of deposited thin films when depositing ultra-multi-layers (for example, >200 layers). When the number of deposited thin films exceeds 200 layers, the uniformity and stability of thin film deposition in the PECVD layer stack structure are achieved, thereby avoiding the phenomenon that the etched through holes of the thin film deposited on the substrate deviate from the vertical direction during the subsequent etching process, thereby ensuring the stability of the performance of the semiconductor device.

[0044] Summary of the Figures

[0045] The features and properties of the present invention are further described by the following examples and accompanying drawings.

[0046] FIG1 is a schematic diagram illustrating the tilting of a high-layer thin film deposited using a PECVD thin film deposition technology.

[0047] 2A and 2B respectively illustrate schematic diagrams of the thin film deposition device before and after the substrate is lifted up in Example 1 provided by the present invention.

[0048] 3A and 3B respectively illustrate top views of the ejector before and after it is rotated to a set angle in Example 1 provided by the present invention.

[0049] 4A and 4B respectively illustrate schematic diagrams of the thin film deposition device before and after the substrate is lifted up in Example 5 provided by the present invention.

[0050] FIG5 illustrates a top view of the support ring in Example 5 provided by the present invention.

[0051] 6A and 6B respectively illustrate schematic diagrams of the thin film deposition device before and after the substrate is lifted up in Example 6 provided by the present invention.

[0052] FIG7 illustrates a top view of the ejector pin and the support ring in Example 6 provided by the present invention.

[0053] 8A to 8D are schematic diagrams illustrating the rotation of the substrate provided by the present invention at different set angles.

[0054] FIG9 illustrates a schematic structural diagram of the thin film deposition apparatus in Example 7 and Example 10 provided by the present invention.

[0055] FIG10 illustrates a schematic structural diagram of the thin film deposition apparatus in Example 8 and Example 11 provided by the present invention.

[0056] FIG11 illustrates a schematic structural diagram of a thin film deposition device in Example 9 provided by the present invention.

[0057] FIG12A is a schematic diagram illustrating how uneven distribution of gas supplied by a gas supply assembly in conventional PECVD thin film deposition technology leads to uneven deposited film.

[0058] FIG12B is a schematic diagram illustrating that in the conventional PECVD thin film deposition technology, the exhaust gas extracted by the gas pump causes the deposited film to be uneven.

[0059] FIG13A illustrates a schematic structural diagram of a thin film deposition device in Example 12 provided by the present invention.

[0060] 13B to 13C are schematic diagrams illustrating the side walls of the gas regulating assembly in Example 12 provided by the present invention being stretched downward and compressed upward, respectively.

[0061] FIG14A illustrates a schematic structural diagram of a thin film deposition device in Example 13 provided by the present invention.

[0062] 14B to 14C are schematic diagrams illustrating the upward compression and downward stretching of the telescopic rod in Example 13 provided by the present invention.

[0063] 15A to 15B respectively illustrate the flow charts of the thin film deposition method in Example 14 provided by the present invention.

[0064] FIG16 illustrates a schematic flow chart of the thin film deposition method in Example 18 provided by the present invention.

[0065] FIG17 illustrates a schematic flow chart of the thin film deposition method in Example 19 provided by the present invention.

[0066] FIG18 illustrates a schematic flow chart of the thin film deposition method in Example 20 provided by the present invention.

[0067] FIG19 illustrates a schematic flow chart of the thin film deposition method in Example 21 provided by the present invention.

[0068] 20A to 20K respectively illustrate schematic diagrams of the arrangement of thin film deposition equipment in Example 22 and Example 23 provided by the present invention.

[0069] FIG21 illustrates a schematic structural diagram of a thin film deposition device in Example 25 provided by the present invention.

[0070] 22-23 illustrate schematic structural diagrams of a thin film deposition device in Example 26 provided by the present invention.

[0071] 24-25 illustrate schematic structural diagrams of a thin film deposition device in Example 27 provided by the present invention.

[0072] 26-27 illustrate schematic structural diagrams of a thin film deposition device in Example 28 provided by the present invention.

[0073] 28-29 illustrate schematic structural diagrams of a thin film deposition device in Example 29 provided by the present invention.

[0074] 30-31 illustrate schematic structural diagrams of a thin film deposition device in Example 30 provided by the present invention.

[0075] 32-33 illustrate schematic structural diagrams of a thin film deposition device in Example 31 provided by the present invention.

[0076] FIG34 illustrates the connection relationship between the controller and various components provided by the present invention.

[0077] 35-36 illustrate schematic structural diagrams of a thin film deposition device in Example 32 provided by the present invention.

[0078] FIG37 illustrates a schematic structural diagram of the arrangement of multiple groups of ejector pins in Example 33 provided by the present invention.

[0079] FIG38 illustrates a schematic structural diagram of a thin film deposition device in Example 34 provided by the present invention.

[0080] FIG39 illustrates a partial enlarged view of area A in FIG38 .

[0081] Figures 40A-40D respectively illustrate the process flow charts of the thin film deposition device in Example 34 provided by the present invention.

[0082] FIG41 illustrates a schematic structural diagram of a thin film deposition device in Example 35 provided by the present invention.

[0083] FIG42 illustrates a partial enlarged view of area B in FIG41 .

[0084] Figures 43A-43D respectively illustrate the process flow charts of the thin film deposition device in Example 35 provided by the present invention.

[0085] Preferred embodiments of the present invention

[0086] The following describes the embodiments of the present invention through specific examples. Those skilled in the art will readily understand the other advantages and benefits of the present invention from the disclosure herein. The present invention may also be implemented or applied through various other specific embodiments, and the details in this specification may be modified or altered based on different viewpoints and applications without departing from the spirit of the present invention.

[0087] It should be understood that when a component is referred to as being “on,” “connected to,” “coupled to,” or “contacting” another component, it can be directly on, connected to, coupled to, or contacting the other component, or intervening components may be present. In contrast, when a component is referred to as being “directly on,” “directly connected to,” “directly coupled to,” or “directly contacting” another component, there are no intervening components present.

[0088] Please refer to Figures 1 to 37. It should be noted that the illustrations provided in this embodiment only illustrate the basic concept of the present invention in a schematic manner. Although the illustrations only show components related to the present invention and are not drawn according to the number, shape and size of components in actual implementation, the shape, quantity and proportion of each component in actual implementation can be changed at will, and the component layout form may also be more complicated.

[0089] Example 1

[0090] During the PECVD thin film deposition process, uneven temperature distribution on the heating tray or uneven flatness of the substrate on the heating tray due to stress on the substrate can lead to poor uniformity during the film deposition process. When thin films of different materials are alternately deposited on a substrate, as the number of layers of the first and second materials alternately stacked on substrate w increases, the thickness of the thin film formed in the layer stack structure on substrate w increases, as shown in Figure 1, causing the stacked film to tilt at a certain angle Δ. In other words, as the number of layers in these layer stack structures increases, the uniformity of the stacked film deteriorates, causing the uniformity of the thin film on substrate w to deviate from the controllable range, making it impossible to achieve the accuracy of through-hole etching in the subsequent etching process, resulting in the etched through-hole deviating from the vertical direction during the etching process, further leading to failure of the semiconductor device.

[0091] In order to solve the above problems, this embodiment 1 provides a thin film deposition device. Specifically, referring to Figures 2A, 2B and 34, the thin film deposition device includes: a processing chamber 1 for performing thin film deposition; a gas supply assembly 2, arranged on the top wall of the processing chamber 1, for supplying process gas to the interior of the processing chamber 1; a heating tray 3, arranged below the gas supply assembly 2, for carrying and heating the substrate w; an RF source 5, for providing RF power to form an RF electric field inside the processing chamber 1, to excite the process gas inside the processing chamber 1 to dissociate into plasma gas, and the dissociated plasma gas is used to perform thin film deposition on the substrate w; a rotating mechanism 403, for controlling the rotation of the substrate w, the rotation axis AA' of the rotation being perpendicular to and passing through the substrate w; a controller, respectively connected to the gas supply assembly 2, the RF source 5, the heating tray 3, and the rotating mechanism 403, for controlling the operation of the gas supply assembly 2, the RF source 5, the heating tray 3, and the rotating mechanism 403. The controller is also configured to construct a program menu, which includes keeping the RF source 5 in an on state when the substrate w rotates. In the present embodiment 1, the rotation axis AA′ passes through the center O of the substrate w, so that the substrate w rotates around the rotation axis AA′.

[0092] When the rotating mechanism 403 drives the substrate w to rotate, the process gas supply to the processing chamber 1 is stopped, and an inert gas or nitrogen gas is introduced into the processing chamber 1 to maintain the pressure within the processing chamber 1 and keep the RF source 5 turned on. Because after a certain number of thin film layers are deposited on the substrate w, some impurity particles are suspended in the processing chamber 1. At this time, the RF source 5 is kept turned on, and the processing chamber 1 is filled with an RF electric field. The impurity particles are charged by the RF electric field in the processing chamber 1, and the charged impurity particles remain suspended and do not fall on the surface of the substrate w. This effectively prevents the impurity particles from falling on the thin film deposited on the substrate w, thereby avoiding contamination of the thin film deposited on the substrate w.

[0093] Therefore, this embodiment 1 proposes to drive the substrate w to rotate while keeping the RF source 5 turned on, thereby compensating for the uneven thickness of the film deposited on the substrate w, achieving the uniformity and stability of the PECVD layer stack structure film deposition, and avoiding the phenomenon that the etched through holes of the film deposited on the substrate w deviate from the vertical direction during the subsequent etching process, thereby further ensuring the stability of the performance of the semiconductor device.

[0094] As shown in Figures 2A and 2B , the thin film deposition apparatus further includes a support member for supporting a substrate w; and a lifting mechanism 402 connected to the support member for driving the support member to vertically ascend or descend to lift the substrate w off the heating tray 3 or place the substrate w on the heating tray 3. The lifting mechanism 402 is connected to a controller, which controls the operation of the lifting mechanism 402.

[0095] In this embodiment 1, the rotating mechanism 403 is disposed at the bottom end of the lifting mechanism 402 and is used to drive the supporting member and the lifting mechanism 402 to rotate synchronously along the horizontal circumferential direction, thereby driving the substrate w to rotate.

[0096] In this first embodiment, the support member is a pin 401 that can move vertically and horizontally. The heating tray 3 has a first through-hole 301, and the pin 401 is disposed within the first through-hole 301. As shown in Figures 3A and 3B , the horizontal cross-section of the first through-hole 301 is arcuate or circular, with the center M of the arc or circle aligned perpendicularly with the center O of the substrate w.

[0097] In this embodiment 1, the lifting mechanism 402 can be a cylinder 402, which is connected to the bottom of the ejector 401; the rotating mechanism 403 can be a motor 403, which is connected to the bottom of the cylinder 402. The cylinder 402 drives the ejector 401 to rise or fall, and the motor 403 drives the cylinder 402 and the ejector 401 to rotate synchronously.

[0098] When the substrate w needs to be rotated, as shown in FIG2B , the lifting mechanism 402 drives the ejector pin 401 to rise upward in the vertical direction and extend from the first through hole 301. The ejector pin 401 lifts the substrate w, so that the substrate w is separated from the heating tray 3. Then, the rotating mechanism 403 drives the ejector pin 401 to move along an arc trajectory in the first through hole 301, so that the substrate w is rotated by a set angle, as shown in FIG3A and FIG3B . After the substrate w is rotated by the set angle, the substrate w stops rotating, and the lifting mechanism 402 drives the ejector pin 401 to move downward in the vertical direction, so that the substrate w is placed on the heating tray 3 for subsequent thin film deposition.

[0099] There can be at least three ejector pins 401, and accordingly, there are at least three first through holes 301, each corresponding to one of the ejector pins 401. In this embodiment 1, as shown in Figures 3A and 3B, there are three ejector pins 401, and there are correspondingly three first through holes 301. The cross-sections of the three first through holes 301 in the horizontal plane are three arcs.

[0100] In this embodiment 1, at least three ejector pins 401 are used to lift the substrate w to rotate the substrate w to a set angle, thereby compensating for the uneven thickness of the thin film deposited on the substrate w, achieving the uniformity and stability of the thin film deposition of the PECVD layer stack structure, and avoiding the phenomenon that the etched through holes of the thin film deposited on the substrate w deviate from the vertical direction during the subsequent etching process, thereby further ensuring the stability of the performance of the semiconductor device.

[0101] A door 101 is provided on the side wall of the processing chamber 1 , which is used for the robot to enter the processing chamber 1 before and after the thin film deposition process on the substrate w to place or remove the substrate w from the heating tray 3 .

[0102] After the thin film deposition is completed, (number of substrate w rotations + 1) * the set angle of each substrate w rotation = 360°. In this embodiment 1, as shown in Figures 8A to 8D, after the thin film deposition is completed, the substrate w is rotated five times, and the set angle of each rotation is 60 degrees. Alternatively, the substrate w is rotated three times, and the set angle of each rotation is 90 degrees. Alternatively, the substrate w is rotated two times, and the set angle of each rotation is 120 degrees. Alternatively, the substrate w is rotated once, and the set angle of each rotation is 180 degrees.

[0103] The deposition rate of the thin film on the substrate w is related to the multiple of the RF power of the RF source 5; the high frequency of the RF source 5 is an integer multiple n of 13.56 MHz, and n satisfies: n = 1, 2, 3, ..., 8; the low frequency range of the RF source 5 is 20 KHz-400 KHz.

[0104] However, during the rotation of the substrate w, the RF source 5 is kept in the on state. After the substrate w is separated from the heating tray 3, the gap between the back of the substrate w and the heating tray 3 is too large, which can easily lead to the occurrence of arc discharge. Therefore, in this embodiment 1, in order to avoid the arc discharge phenomenon caused by the substrate w being separated from the heating tray 3 when the RF source 5 is turned on, as shown in Figures 2A and 2B, it is necessary to adjust the gap between the substrate w and the heating tray 3 to be smaller than the set value, so as to avoid the arc discharge phenomenon caused by the substrate w being separated from the heating tray 3 in the atmosphere of plasma gas. In this embodiment 1, the set value of the gap between the substrate w and the heating tray 3 is m, 0<m≤5mm. Therefore, under the condition that the gap between the substrate w and the heating tray 3 is smaller than the set value, the RF source 5 is kept in the on state, which reduces the risk of arc discharge in the substrate w and ensures the safety and stability of the thin film deposition process.

[0105] Example 2

[0106] This embodiment 2 provides a thin film deposition device, which differs from embodiment 1 in that:

[0107] As shown in Figures 2A and 2B, the heating tray 3 is provided with a second through hole 302. During the rotation of the substrate w, the RF source 5 is kept on, and a non-process gas is introduced into the gap between the substrate w and the heating tray 3 through the second through hole 302 to reduce the risk of arc discharge when the substrate w is separated from the heating tray 3. In this embodiment 2, the non-process gas is an inert gas or nitrogen.

[0108] After a certain number of thin film layers are deposited on substrate w, some impurity particles are suspended within processing chamber 1. At this point, keeping RF source 5 on and the interior of processing chamber 1 filled with an RF electric field charges the impurity particles under the action of the RF electric field within processing chamber 1. These charged impurity particles remain suspended and do not fall onto the surface of substrate w, effectively preventing them from falling onto the thin film deposited on substrate w and contaminating it. Therefore, when the gap between substrate w and heating tray 3 is filled with non-process gas, keeping RF source 5 on reduces the risk of arc discharge on substrate w and ensures the safety and stability of the thin film deposition process.

[0109] The other configurations of this embodiment are the same as those of the first embodiment and will not be described again here.

[0110] Example 3

[0111] This embodiment 3 provides a thin film deposition device, which differs from embodiment 1 in that:

[0112] During the rotation of the substrate w, the RF source 5 is kept in the on state, and the RF power of the RF source 5 is lowered to be lower than the RF power of the RF source 5 during the thin film deposition process, so as to reduce the risk of arc discharge when the substrate w is separated from the heating tray 3, thereby ensuring the safety and stability of the thin film deposition process.

[0113] The other configurations of this embodiment are the same as those of the first embodiment and will not be described again here.

[0114] Example 4

[0115] This embodiment 4 provides a thin film deposition device, which differs from embodiment 1 in that:

[0116] Before the substrate w is rotated, the RF source 5 is adjusted to be in an off state, and the processing chamber 1 is purified.

[0117] After depositing a certain number of thin film layers on substrate w, impurity particles will be present inside processing chamber 1. The dirtier the interior of processing chamber 1, the more likely arc discharge will occur when substrate w is removed from heating tray 3 inside processing chamber 1. Therefore, before rotating substrate w, it is best to turn off RF source 5 and supply nitrogen gas to processing chamber 1 through gas supply assembly 2 to purge processing chamber 1.

[0118] The other configurations of this embodiment are the same as those of the first embodiment and will not be described again here.

[0119] Example 5

[0120] Referring to FIG. 4A to FIG. 5 , this embodiment 5 provides a thin film deposition device. Compared with the embodiment 1, the difference is that:

[0121] As shown in FIG. 4A and FIG. 4B , the support member is a support ring 404 disposed at the bottom edge of the substrate w. The support ring 404 can be raised and lowered in the vertical direction and rotated about the center line AA′ of the substrate w as the rotation axis.

[0122] In this fifth embodiment, as shown in FIG5 , support ring 404 is a circular ring with a notch a, or support ring 404 comprises multiple arc segments located on the same circle. Accordingly, a door 101 is provided on the sidewall of processing chamber 1 to allow a robot to enter processing chamber 1 and place or remove substrates w from support ring 404 before and after thin film deposition processes on substrates w.

[0123] As shown in Figures 4A and 4B, when the substrate w needs to be rotated, the lifting mechanism 402 drives the support ring 404 to rise upward in the vertical direction, lifts the substrate w, and separates the substrate w from the heating tray 3; then the rotating mechanism 403 drives the support ring 404 to rotate to drive the substrate w to rotate a set angle; after the substrate w rotates the set angle, it stops rotating, and the lifting mechanism 402 drives the support ring 404 to move downward in the vertical direction, placing the substrate w on the heating tray 3 for thin film deposition.

[0124] In this embodiment 5, a support ring 404 arranged at the bottom of the outer periphery of the substrate w is used to lift the substrate w to adjust the rotation setting angle of the substrate w, so as to realize the rotation of the substrate w around the rotation axis AA', compensate for the uneven thickness of the thin film deposited on the substrate w, and realize the uniformity and stability of the thin film deposition of the PECVD layer stack structure.

[0125] The other configurations of this embodiment are the same as those of the first embodiment and will not be described again here.

[0126] Example 6

[0127] Referring to FIG. 6A to FIG. 7 , this embodiment 6 provides a thin film deposition device. Compared with the embodiment 1, the difference is that:

[0128] As shown in Figures 6A to 7, the thin film deposition device also includes: a support member for supporting the substrate w, wherein the support member includes a pin 401 and a support ring 404; a first lifting mechanism 402 is connected to the pin 401, for driving the pin 401 to rise or fall in a vertical direction, so that the robot can remove the substrate w from the heating tray 3 or place the substrate w on the heating tray 3; a second lifting mechanism 405 is connected to the support ring 404, for driving the support ring 404 to rise or fall in a vertical direction, so as to lift the substrate w off the heating tray 3 or place the substrate w on the heating tray 3.

[0129] In this embodiment 6, the rotating mechanism 403 is disposed at the bottom of the second lifting mechanism 405 and is used to drive the support ring 404 and the second lifting mechanism 405 to rotate synchronously with the center line AA′ of the substrate w as the rotation axis, thereby driving the substrate w to rotate.

[0130] As shown in FIG. 6A and FIG. 6B , a first through hole 301 is formed on the heating tray 3 , and an ejector pin 401 is disposed in the first through hole 301 for passing through the first through hole 301 to support the substrate w.

[0131] When the robot places a substrate w into the processing chamber 1, the first lifting mechanism 402 drives the ejector pins 401 to rise vertically and extend from the first through-hole 301 to support the substrate w placed by the robot. The first lifting mechanism 402 then drives the ejector pins 401 to descend vertically, and the ejector pins 401 retract into the first through-hole 301, placing the substrate w on the heating tray 3 for subsequent thin film deposition. When the robot removes the substrate w from the processing chamber 1, the first lifting mechanism 402 drives the ejector pins 401 to rise vertically and extend from the first through-hole 301, lifting the substrate w from the heating tray 3 to facilitate the robot's removal of the substrate w. The first lifting mechanism 402 then drives the ejector pins 401 to descend vertically, and the ejector pins 401 retract into the first through-hole 301.

[0132] When the substrate w needs to be rotated, the second lifting mechanism 405 drives the support ring 404 to rise upward in the vertical direction, lifts the substrate w, and separates the substrate w from the heating tray 3; then the rotating mechanism 403 drives the support ring 404 to rotate to drive the substrate w to rotate the set angle; after the substrate w rotates the set angle, it stops rotating, and the second lifting mechanism 405 drives the support ring 404 to move downward in the vertical direction, placing the substrate w on the heating tray 3 for thin film deposition.

[0133] The other configurations of this embodiment are the same as those of the first embodiment and will not be described again here.

[0134] Example 7

[0135] As shown in FIG9 , this embodiment 7 provides a thin film deposition apparatus. The thin film deposition apparatus includes: a processing chamber 1 for performing thin film deposition; a gas supply assembly 2 disposed on the top wall of the processing chamber 1 for supplying process gas into the processing chamber 1; a heating tray 3 disposed below the gas supply assembly 2 for supporting and heating a substrate w; an RF source 5 for providing RF power to form an RF electric field within the processing chamber 1, thereby exciting the process gas within the processing chamber 1 to dissociate into plasma gas, and the dissociated plasma gas is used to perform thin film deposition on the substrate w; and a rotating mechanism 403 connected to the heating tray 3 for driving the heating tray 3 to rotate about an axis AA' passing through the center of the substrate w, thereby driving the substrate w to rotate synchronously.

[0136] When the rotating mechanism 403 drives the heating tray 3 and the substrate w to rotate, the process gas is stopped from being introduced into the processing chamber 1, and an inert gas or nitrogen is introduced into the processing chamber 1 to maintain the pressure in the processing chamber 1 and keep the RF source 5 in an on state.

[0137] In this embodiment 7, the heating tray 3 drives the substrate w to rotate synchronously about the axis AA' passing through the center of the substrate w, which includes: the heating tray 3 rotates forward about the axis AA' by a set angle, and then rotates backward about the axis AA'.

[0138] Example 8

[0139] As shown in FIG10 , this embodiment 8 provides a thin film deposition apparatus. The thin film deposition apparatus includes: a processing chamber 1 for performing thin film deposition; a gas supply assembly 2 disposed on the top wall of the processing chamber 1 for supplying process gas into the processing chamber 1; a heating tray 3 disposed below the gas supply assembly 2 for supporting and heating a substrate w; and a radio frequency source 5 for providing radio frequency power to form an radio frequency electric field within the processing chamber 1, thereby exciting the process gas within the processing chamber 1 to dissociate into plasma gas. The dissociated plasma gas then deposits a thin film on the substrate w.

[0140] The thin film deposition device also includes: a support member for supporting the substrate w, wherein the support member is a support ring 404 arranged at the bottom edge of the substrate w; a lifting mechanism 402, connected to the support ring 404, for driving the support ring 404 to rise or fall in a vertical direction to lift the substrate w off the heating tray 3 or place the substrate w on the heating tray 3.

[0141] In the eighth embodiment, the rotating mechanism 403 is connected to the heating tray 3 and is used to drive the heating tray 3 to rotate about the axis AA′ passing through the center of the substrate w.

[0142] When the rotating mechanism 403 drives the heating tray 3 to rotate, the process gas is stopped from being introduced into the processing chamber 1, and an inert gas or nitrogen is introduced into the processing chamber 1 to maintain the pressure in the processing chamber 1 and keep the RF source 5 in an on state.

[0143] In the eighth embodiment, the heating tray 3 rotates about the axis AA′ passing through the center of the substrate w, which includes: the heating tray 3 rotates in a forward direction around the axis AA′ by a set angle, and then rotates in a reverse direction around the axis AA′.

[0144] As shown in Figure 10, when the heating tray 3 needs to be rotated, the lifting mechanism 402 drives the support ring 404 to rise upward in the vertical direction, lifts the substrate w, and separates the substrate w from the heating tray 3, and then the rotating mechanism 403 drives the heating tray 3 to rotate a set angle; after the heating tray 3 rotates the set angle, it stops rotating, and the lifting mechanism 402 drives the support ring 404 to move downward in the vertical direction, placing the substrate w on the heating tray 3 for thin film deposition.

[0145] Embodiment 9

[0146] As shown in Figure 11, this embodiment 9 provides a thin film deposition device, which includes: a processing chamber 1 for thin film deposition; a gas supply component 2, arranged on the top wall of the processing chamber 1, for supplying process gas to the inside of the processing chamber 1; a heating tray 3, arranged below the gas supply component 2, for carrying and heating the substrate w; a radio frequency source 5, for providing radio frequency power to excite the process gas inside the processing chamber 1 to dissociate into plasma gas, and the plasma gas is used to deposit a thin film on the substrate w; a rotating mechanism 403 is connected to the gas supply component 2, and is used to drive the gas supply component 2 to rotate.

[0147] In this ninth embodiment, the rotating mechanism 403 may be a motor 403 connected to the gas supply assembly 2 to rotate the gas supply assembly 2. In this ninth embodiment, after multiple substrates w are sequentially placed into the processing chamber 1 and the thin film deposition process is completed, the rotating mechanism 403 drives the gas supply assembly 2 to rotate by a set angle.

[0148] Preferably, when the rotating mechanism 403 drives the gas supply assembly 2 to rotate, the process gas is stopped from being introduced into the processing chamber 1, and an inert gas or nitrogen is introduced into the processing chamber 1 to maintain the pressure in the processing chamber 1 and keep the RF source 5 turned on. Because after a certain number of thin films are deposited on the substrate w, some impurity particles are suspended in the processing chamber 1. At this time, the RF source 5 is kept turned on, and the processing chamber 1 is filled with an RF electric field. The impurity particles are charged by the RF electric field in the processing chamber 1, and the charged impurity particles remain suspended and will not fall on the surface of the substrate w. This effectively prevents the impurity particles from falling on the thin film deposited on the substrate w, thereby avoiding contamination of the thin film deposited on the substrate w.

[0149] By rotating the gas supply assembly 2, the uniformity of the process gas supplied by the gas supply assembly 2 is improved, thereby improving the thickness uniformity of the deposited film on the substrate w, and achieving the uniformity and stability of the PECVD layer stack structure film deposition.

[0150] Example 10

[0151] As shown in FIG9 , this embodiment 10 provides a thin film deposition device, which differs from embodiment 7 in that:

[0152] The rotating mechanism 403 is connected to the heating tray 3 and is used to drive the heating tray 3 to rotate about the axis AA' passing through the center of the substrate w, thereby driving the substrate w to rotate synchronously. When the rotating mechanism 403 drives the heating tray 3 and the substrate w to rotate synchronously, the RF source 5 is adjusted to the off state.

[0153] The other configurations of this embodiment are the same as those of the seventh embodiment and will not be described again here.

[0154] Example 11

[0155] As shown in FIG10 , this embodiment 11 provides a thin film deposition device, which differs from embodiment 8 in that:

[0156] When the rotating mechanism 403 drives the heating tray 3 to rotate, the radio frequency source 5 is adjusted to be in an off state.

[0157] The other configurations of this embodiment are the same as those of the eighth embodiment and will not be described again here.

[0158] Example 12

[0159] In PECVD, due to the deformation caused by long-term use of the gas supply component 2, the process gas delivered into the processing chamber 1 is unevenly distributed, resulting in different gas flow rates obtained at different positions of the substrate, which in turn causes deviations in the thickness of the film deposited by the plasma gas on the substrate, causing the etched through hole to deviate from the vertical direction during the etching process, ultimately leading to the failure of the semiconductor device.

[0160] As shown in FIG12A , when the process gas is introduced into the gas supply assembly 2, the gas flow rate at the central position of the gas supply assembly 2 is greater than the gas flow rate at the periphery of the gas supply assembly 2, resulting in that during the thin film deposition process, the thickness of the thin film deposited on the substrate w at the central position is greater than the thickness of the peripheral edge, causing the thin film stacked on the surface of the substrate w to tilt at a certain angle △, resulting in uneven thickness of the thin film deposited on the substrate w, thereby causing the defect that the etched through hole deviates from the vertical direction during the subsequent etching process.

[0161] As shown in FIG12B , processing chamber 1 is connected to an air pump for extracting waste gas during the deposition process in processing chamber 1. However, the air pump's extraction of waste gas can easily cause the gas flow rate at the periphery of gas supply assembly 2 to be greater than the gas flow rate at the center of gas supply assembly 2. As a result, during the thin film deposition process, the thickness of the thin film deposited on substrate w at the center is less than the thickness at the periphery. This also causes the thin film stacked on the surface of substrate w to tilt at a certain angle Δ, resulting in uneven thickness of the deposited film on substrate w, which in turn can cause defects such as deviation of the etched through-hole from the vertical direction during the subsequent etching process.

[0162] In order to solve the above-mentioned defect of uneven deposition at the periphery and the central position of the deposited film, please refer to Figures 13A to 13C. This embodiment 12 provides a thin film deposition device. Specifically, as shown in Figure 13A, the thin film deposition device includes: a processing chamber 1 for thin film deposition; a gas supply assembly 2, arranged on the top wall of the processing chamber 1, for supplying process gas to the inside of the processing chamber 1, and the gas supply assembly 2 has a first porous plate 21; a heating tray 3, located below the gas supply assembly 2, for carrying and heating the substrate w; a gas regulating unit 200, arranged inside the gas supply assembly 2, and a second porous plate 201 is provided at the bottom end of the gas regulating unit 200, and the second porous plate 201 is arranged opposite to the first porous plate 21 of the gas supply assembly 2. The gap between the second porous plate 201 and the first porous plate 21 is adjusted to adjust the flow direction of the process gas within the gas supply assembly 2, allowing the process gas within the gas supply assembly 2 to be fully mixed, thereby improving the uneven distribution of plasma gas within the processing chamber 1. This ensures uniform and stable deposition of thin films in the stacked structure on the substrate w during PECVD, and prevents the etched through-holes deposited on the thin film on the substrate w from deviating from the vertical direction during the subsequent etching process, thereby further ensuring the stability of the semiconductor device performance. In addition, the thin film deposition apparatus also includes a controller, which is respectively connected to the gas supply assembly 2, the heating tray 3, and the gas regulating unit 200. The controller is used to control the operation of the gas supply assembly 2, the heating tray 3, and the gas regulating unit 200.

[0163] As shown in FIG13A , the thin film deposition apparatus further includes an RF source 5 , which is used to provide RF power to form an RF electric field within the processing chamber 1 , thereby exciting the process gas within the processing chamber 1 to dissociate into plasma gas. The dissociated plasma gas then deposits a thin film on the substrate w. The high-frequency frequency of the RF source 5 is an integer multiple n of 13.56 MHz, where n satisfies the following conditions: n = 1, 2, 3, ..., 8. The low-frequency frequency of the RF source 5 ranges from 20 kHz to 400 kHz.

[0164] As shown in Figures 13B to 13C, the side wall 202 of the gas regulating assembly 200 can be stretched or contracted in the vertical direction to adjust the gap between the second porous plate 201 and the first porous plate 21, so that the process gas inside the gas supply assembly 2 can be fully mixed, thereby improving the defect of uneven distribution of plasma gas during the thin film deposition process, resulting in uneven deposition of the thin film on the surface of the substrate w.

[0165] In this embodiment 12, as shown in Figures 13B and 13C, the side wall 202 of the gas regulating assembly 200 is a bellows, which can be stretched downward or contracted upward in the vertical direction, so that the second porous plate 201 at the bottom end of the gas regulating assembly 200 is bent or arc-shaped to adjust the gap between the second porous plate 201 and the first porous plate 21, so that the process gas inside the gas supply assembly 2 can be fully mixed, thereby improving the defect of uneven deposition of thin film on the surface of the substrate w due to uneven distribution of plasma gas.

[0166] Example 13

[0167] Referring to FIG. 14A to FIG. 14C , this embodiment 13 provides a thin film deposition device. Compared with the embodiment 12, the difference is that:

[0168] The gas regulating assembly 200 includes a telescopic rod 203, and the telescopic rod 203 is connected to the second porous plate 201. The telescopic rod 203 can be stretched or contracted in the vertical direction so that the second porous plate 201 is bent or arc-shaped to adjust the gap between the second porous plate 201 and the first porous plate 21, so that the process gas inside the gas supply assembly 2 can be fully mixed, thereby improving the defect of uneven distribution of plasma gas inside the processing chamber 1, which leads to uneven deposition of thin film on the surface of the substrate w.

[0169] In this embodiment 13, as shown in FIG14A , the telescopic rod 203 is disposed at a central position inside the gas regulating unit 200 and is connected to the center of the second porous plate 201 .

[0170] The other configurations of this embodiment are the same as those of the twelfth embodiment and will not be described again here.

[0171] Example 14

[0172] In order to solve the problem of uneven thin film deposition on the surface of substrate w in the prior art, please refer to Figures 2A to 10 and 15A. This embodiment 14 provides a thin film deposition method, which is implemented based on the thin film deposition device in the above embodiments 1-8 and embodiments 10-11.

[0173] Specifically, the thin film deposition method includes the following steps:

[0174] Step S1, placing the substrate w in the PECVD processing chamber 1, and evacuating the processing chamber 1 so that the substrate w on which the thin film is to be deposited is in a vacuum environment;

[0175] Step S2: introducing process gas into the processing chamber 1 and turning on the radio frequency source 5 to dissociate the process gas in the processing chamber 1 into plasma gas, thereby depositing a certain number of thin films on the substrate w.

[0176] Step S3, stopping the introduction of process gas into the processing chamber 1, and introducing non-process gas, such as inert gas or nitrogen, into the processing chamber 1 to maintain the pressure inside the processing chamber 1;

[0177] Step S4, keeping the RF source 5 turned on, rotating the substrate w or rotating the heating tray 3 or rotating the substrate w and the heating tray 3 synchronously by a set angle;

[0178] Step S5, introducing process gas into the processing chamber 1 again, and then depositing a certain number of thin film layers on the substrate w;

[0179] Step S6, stopping the introduction of process gas into the processing chamber 1, and introducing non-process gas, such as inert gas or nitrogen, into the processing chamber 1 to maintain the pressure inside the processing chamber 1;

[0180] Step S7, determining whether the number of layers of the thin film deposited on the substrate w meets the set number of layers; if not, repeating the above steps S2-S6; if so, executing step S8;

[0181] In step S8, the substrate w is taken out from the PECVD processing chamber 1 to complete the thin film deposition process of the substrate w.

[0182] The rotation axis AA′ on which the substrate w rotates or the heating tray 3 rotates or the substrate w and the heating tray 3 rotate synchronously is vertical and passes through the center O of the substrate w.

[0183] The thin film deposited on the substrate w includes a first material and a second material deposited alternately. In this embodiment 14, the first material is silicon oxide and the second material is silicon nitride.

[0184] The thin film deposition method further includes: after each material is deposited on the surface of the substrate w, exhaust gas in the processing chamber 1 needs to be pumped out before proceeding to subsequent process steps.

[0185] When rotating substrate w, rotating heating tray 3, or rotating substrate w and heating tray 3 synchronously, the process gas supply is stopped and inert gas or nitrogen is introduced to maintain the pressure in processing chamber 1 and keep RF source 5 turned on. Because after a certain number of thin film layers are deposited on substrate w, some impurity particles are suspended in processing chamber 1. At this time, keeping RF source 5 turned on fills the processing chamber 1 with an RF electric field. The impurity particles are charged by the RF electric field in processing chamber 1, and the charged impurity particles remain suspended and do not fall onto the surface of substrate w. This effectively prevents impurity particles from falling onto the thin film deposited on substrate w, thereby avoiding contamination of the thin film deposited on substrate w.

[0186] After the thin film deposition is completed, (number of substrate w rotations + 1) * the set angle of each substrate w rotation = 360 degrees. In this embodiment 14, as shown in Figures 8A to 8D, after the thin film deposition is completed, the substrate w is rotated five times, and the set angle of each rotation is 60 degrees. Alternatively, the substrate w is rotated three times, and the set angle of each rotation is 90 degrees. Alternatively, the substrate w is rotated two times, and the set angle of each rotation is 120 degrees. Alternatively, the substrate w is rotated once, and the set angle of each rotation is 180 degrees.

[0187] However, when the substrate w rotates or the heating tray 3 rotates, the RF source 5 is kept in the on state. After the substrate w is separated from the heating tray 3, the gap between the back of the substrate w and the heating tray 3 is too large, which can easily lead to the occurrence of arc discharge. Therefore, in this embodiment 14, in order to avoid the arc discharge phenomenon caused by the substrate w being separated from the heating tray 3 when the RF source 5 is turned on, it is necessary to adjust the gap between the substrate w and the heating tray 3 to be smaller than the set value, so as to avoid the arc discharge phenomenon caused by the substrate w being separated from the heating tray 3 in the plasma gas atmosphere. In this embodiment 14, the set value of the gap between the substrate w and the heating tray 3 is m, 0<m≤5mm. Therefore, under the condition that the gap between the substrate w and the heating tray 3 is smaller than the set value, the RF source 5 is kept in the on state, which reduces the risk of arc discharge in the substrate w and ensures the safety and stability of the thin film deposition process.

[0188] In this fourteenth embodiment, when the number of thin film layers deposited on the surface of substrate w is small (e.g., less than 150 layers), the heating tray 3 can be driven to rotate synchronously with the substrate w to prevent arc discharge caused by the substrate w being lifted. If the surface of the heating tray 3 is uneven, the substrate w can be lifted and rotated, or the heating tray 3 can be driven to rotate, to address the impact of uneven temperature on the substrate w on the uniformity of the thin film deposited on the surface of the substrate w.

[0189] Alternatively, when depositing a thin film of a single material, as shown in FIG15B ,

[0190] Specifically, the thin film deposition method includes the following steps:

[0191] Step S11, placing the substrate in a processing chamber and evacuating the processing chamber;

[0192] Step S12: introducing process gas, turning on the radio frequency source, and depositing a thin film of a certain thickness on the substrate;

[0193] Step S13: continue to introduce process gas, keep the RF source on, and rotate the substrate or the heating tray or the substrate and the heating tray synchronously by a set angle;

[0194] Step S14, continuing to deposit a thin film on the substrate;

[0195] Step S15, determining whether the thickness of the deposited film on the substrate meets the set requirements. If not, repeat the above steps S12-S14; if satisfied, execute step S16;

[0196] In step S16, the substrate is taken out from the processing chamber.

[0197] During the thin film growth process, the substrate w is rotated to ensure that the thin film is deposited more evenly on the surface of the substrate w.

[0198] Example 15

[0199] This embodiment 15 provides a thin film deposition method, which differs from embodiment 14 in that:

[0200] When the RF source 5 is turned on, a non-process gas is introduced into the gap between the substrate w and the heating tray 3 through the second through hole 302 on the heating tray 3 to reduce the risk of arc discharge when the substrate w is separated from the heating tray 3. In this embodiment 15, the non-process gas is an inert gas or nitrogen.

[0201] When the gap between the substrate w and the heating tray 3 is filled with non-process gas, the RF source 5 is kept on to reduce the risk of arc discharge on the substrate w and ensure the safety and stability of the thin film deposition process.

[0202] The other configurations of this embodiment are the same as those of the fourteenth embodiment and will not be described again here.

[0203] Example 16

[0204] This embodiment 16 provides a thin film deposition method, which differs from embodiment 14 in that:

[0205] Keep the RF source 5 in the on state and lower the RF power of the RF source 5 to be lower than the RF power of the RF source 5 during the thin film deposition process to reduce the risk of arc discharge when the substrate w is separated from the heating tray 3, thereby ensuring the safety and stability of the thin film deposition process.

[0206] The other configurations of this embodiment are the same as those of the fourteenth embodiment and will not be described again here.

[0207] Example 17

[0208] This embodiment 17 provides a thin film deposition method, which differs from embodiment 14 in that:

[0209] Before the substrate w rotates or the heating tray 3 rotates or the substrate w and the heating tray 3 rotate synchronously, the RF source 5 is adjusted to be off and the processing chamber 1 is purified.

[0210] After a certain number of thin film layers are deposited on substrate w, impurity particles will be present inside processing chamber 1. The dirtier the interior of processing chamber 1, the more likely arc discharge will occur when substrate w is separated from heating tray 3 inside processing chamber 1. Therefore, before substrate w rotates or heating tray 3 rotates, or before substrate w and heating tray 3 rotate synchronously, it is best to turn off RF source 5 and supply nitrogen to processing chamber 1 through gas supply assembly 2 to purge processing chamber 1. After the purge is completed, RF source 5 can be turned back on.

[0211] The other configurations of this embodiment are the same as those of the fourteenth embodiment and will not be described again here.

[0212] Embodiment 18

[0213] Referring to FIG. 8A to FIG. 9 and FIG. 16 , this embodiment 18 provides a thin film deposition method, which is implemented based on the thin film deposition apparatus in the above-mentioned embodiments 7 and 10.

[0214] Specifically, the thin film deposition method includes the following steps:

[0215] Step S21, placing the substrate w in the PECVD processing chamber 1, and evacuating the processing chamber 1 so that the substrate w on which the thin film is to be deposited is in a vacuum environment;

[0216] Step S22: introducing process gas into the processing chamber 1 and turning on the radio frequency source 5 to dissociate the process gas in the processing chamber 1 into plasma gas, thereby depositing a certain number of thin films on the substrate w.

[0217] Step S23, stopping the introduction of process gas into the processing chamber 1, and introducing inert gas or nitrogen into the processing chamber 1 to maintain the pressure inside the processing chamber 1;

[0218] Step S24, adjusting the RF source 5 to an off state, so that the heating tray 3 drives the substrate w to rotate synchronously by a set angle;

[0219] Step S25, the process gas is introduced into the processing chamber 1 again, and the RF source 5 is adjusted to be on, and then a certain number of thin film layers are deposited on the substrate w;

[0220] Step S26, stopping the introduction of process gas into the processing chamber 1, and introducing inert gas or nitrogen into the processing chamber 1 to maintain the pressure inside the processing chamber 1;

[0221] Step S27, determining whether the number of layers of thin films deposited on substrate w meets the set number of layers; if not, repeating the above steps S22-S26; if so, executing step S28;

[0222] In step S28 , the substrate w is taken out from the processing chamber 1 to complete the thin film deposition process.

[0223] The heating tray 3 rotates synchronously with the substrate w about an axis AA' perpendicular to the substrate w and passing through the center O of the substrate w. In this embodiment 18, the heating tray 3 rotates synchronously with the substrate w about the axis AA' passing through the center of the substrate w as the axis further comprising: the heating tray 3 rotates in a forward direction about the axis AA' by a set angle, and then rotates in a reverse direction about the axis AA'.

[0224] The thin film deposited on the substrate w includes a first material and a second material deposited alternately.

[0225] The thin film deposition method further includes: after each material is deposited on the surface of the substrate w, exhaust gas in the processing chamber 1 needs to be pumped out before proceeding to subsequent process steps.

[0226] After the thin film deposition is completed, (number of substrate w rotations + 1) * the set angle of each substrate w rotation = 360°. In this embodiment 18, as shown in Figures 8A to 8D, after the thin film deposition is completed, the substrate w is rotated five times, and the set angle of each rotation is 60 degrees. Alternatively, the substrate w is rotated three times, and the set angle of each rotation is 90 degrees. Alternatively, the substrate w is rotated two times, and the set angle of each rotation is 120 degrees. Alternatively, the substrate w is rotated once, and the set angle of each rotation is 180 degrees.

[0227] Example 19

[0228] Please refer to FIG. 10 and FIG. 17 . This embodiment 19 provides a thin film deposition method. The thin film deposition method is implemented based on the thin film deposition apparatus in the above-mentioned embodiment 8 and embodiment 11.

[0229] Specifically, the thin film deposition method includes the following steps:

[0230] Step S31, placing the substrate w in the PECVD processing chamber 1, and evacuating the processing chamber 1 so that the substrate w on which the thin film is to be deposited is in a vacuum environment;

[0231] Step S32: introducing process gas into the processing chamber 1 and turning on the radio frequency source 5 to dissociate the process gas in the processing chamber 1 into plasma gas, thereby depositing a certain number of thin film layers on the substrate w.

[0232] Step S33, stopping the introduction of process gas into the processing chamber 1, and introducing inert gas or nitrogen into the processing chamber 1 to maintain the pressure inside the processing chamber 1;

[0233] Step S34: adjust the RF source 5 to the off state, lift the substrate w, drive the heating tray 3 to rotate a set angle, and then place the substrate w back on the heating tray 3;

[0234] Step S35 , introducing process gas into the processing chamber 1 , adjusting the RF source 5 to be on, and then depositing a certain number of thin films on the substrate w;

[0235] Step S36, stopping the introduction of process gas into the processing chamber 1, and introducing inert gas or nitrogen into the processing chamber 1 to maintain the pressure inside the processing chamber 1;

[0236] Step S37, determining whether the number of layers of the thin film deposited on the substrate w meets the set number of layers; if not, repeating the above steps S32-S36; if so, executing step S38;

[0237] In step S8 , the substrate w is taken out from the processing chamber 1 to complete the thin film deposition process.

[0238] The rotation axis AA' of the heating tray 3 is perpendicular to and passes through the center O of the substrate w. In this embodiment 19, the heating tray 3 rotates about the axis AA' passing through the center of the substrate w as the rotation axis, further comprising: the heating tray 3 rotates in a forward direction around the rotation axis AA' by a set angle, and then rotates in a reverse direction around the rotation axis AA'.

[0239] In this embodiment 19, the thin film deposited on the substrate w includes a first material and a second material deposited alternately.

[0240] The thin film deposition method further includes: after each material is deposited on the surface of the substrate w, exhaust gas in the processing chamber 1 needs to be pumped out before proceeding to subsequent process steps.

[0241] Example 20

[0242] Please refer to FIG. 11 and FIG. 18 . This embodiment 20 provides a thin film deposition method. The thin film deposition method is implemented based on the thin film deposition device in the above-mentioned embodiment 9.

[0243] Specifically, the thin film deposition method includes the following steps:

[0244] Step S41, placing multiple substrates w into the processing chamber 1 in sequence to complete the thin film deposition process;

[0245] Step S42, rotating the gas supply assembly 2 by a set angle;

[0246] In step S43, the processing chamber 1 is cleaned to ensure the cleanliness of the processing chamber 1. After the cleaning process is completed, steps S41 to S43 are repeated.

[0247] In this embodiment 20, the thin film deposited on the substrate w includes a first material and a second material that are alternately deposited. The thin film deposition process for the plurality of substrates w sequentially placed in the processing chamber 1 includes the following steps: After each material is deposited on the surface of each substrate w, exhaust gas within the processing chamber 1 must be evacuated before proceeding to subsequent process steps.

[0248] Example 21

[0249] Please refer to Figures 13A to 13C and Figure 19. This embodiment 21 provides a thin film deposition method, which is implemented based on the thin film deposition device in the above embodiment 12.

[0250] As shown in Figures 13A to 13C , a first porous plate 21 is disposed at the bottom of the gas supply assembly 2. A gas regulating unit 200 is disposed within the gas supply assembly 2, and a second porous plate 201 is disposed at the bottom of the gas regulating unit 200. The second porous plate 201 is positioned opposite the first porous plate 21 of the gas supply assembly 2. Adjusting the gap between the second porous plate 201 and the first porous plate 21 adjusts the flow direction of the process gas within the gas supply assembly 2, ensuring thorough mixing of the process gases within the gas supply assembly 2. This improves the uneven distribution of plasma gas within the processing chamber 1, which can lead to uneven film deposition on the surface of the substrate w.

[0251] Specifically, as shown in Figures 13A to 13C, the gap between the second porous plate 201 and the first porous plate 21 is adjusted by stretching or compressing the sidewall 202 of the gas regulating unit 200 in the vertical direction. For details, refer to the adjustment method of the sidewall 202 of the gas regulating unit 200 described in Example 12 above, which will not be repeated here. The thin film deposition method provided in this Example 21 includes the following steps:

[0252] Step S51, placing multiple substrates w into the processing chamber 1 in sequence to complete the thin film deposition process;

[0253] Step S52, adjusting the gap between the second porous plate 201 and the first porous plate 21 to adjust the flow direction of the process gas inside the gas supply assembly 2;

[0254] In step S53 , the processing chamber 1 is cleaned to ensure the cleanliness of the processing chamber 1 . After the cleaning process is completed, steps S51 - S53 are repeated.

[0255] Example 22

[0256] Referring to Figures 14A to 14C and Figure 19, this embodiment 22 provides a thin film deposition method, which is implemented based on the thin film deposition device in the above embodiment 13. Compared with embodiment 21, the difference is:

[0257] As shown in Figures 14A to 14C , a telescopic rod 203 is provided within the gas conditioning unit 200. The gap between the second porous plate 201 and the first porous plate 21 is adjusted by vertically stretching or compressing the telescopic rod 203. For details on adjusting the telescopic rod 203 of the gas conditioning unit 200 as described in Example 13 above, no further details are given here.

[0258] The other settings of this embodiment are the same as those of Example 21 and will not be repeated here.

[0259] Example 23

[0260] Referring to Figures 20A to 20E, this embodiment 23 provides a thin film deposition device, including: a substrate loading port 002 for placing a substrate w; a cache device 003; a front-end robot 001 for transferring the substrate w between the substrate loading port 002 and the cache device 003; the thin film deposition device in the above embodiments 1-13, for performing thin film deposition on the substrate w; and a process robot 004 for transferring the substrate w between the cache device 003 and the processing chamber 1 of the thin film deposition device.

[0261] Specifically, the front-end robot 001 takes out the substrate w to be deposited from the substrate loading port 002 and places it on the cache device 003; the process robot 004 takes out the substrate w from the cache device 003, places it in the processing chamber 1 of the thin film deposition device, and performs thin film deposition on the surface of the substrate w; after the thin film deposition is completed, the process robot 004 takes out the substrate w from the processing chamber 1 and places it on the cache device 003; the front-end robot 001 takes out the substrate w from the cache device 003 and puts it back on the substrate loading port 002, completing the process operation of the thin film deposition equipment.

[0262] In this embodiment 23, as shown in FIG. 20A to FIG. 20C , the thin film deposition apparatus has multiple processing chambers 1 , and the multiple processing chambers 1 are symmetrically arranged on both sides of the process robot 004 .

[0263] At the same time, there can be one or more process robots 004. When there are multiple process robots 004, as shown in Figure 20A, there are correspondingly multiple cache devices 003. When there is only one process robot 004, as shown in Figures 20B and 20C, a contactless magnetic levitation track is provided below the process robot 004 to ensure that the process robot 004 is oil-free and frictionless during the sliding process. Each processing chamber 1 can also be provided with multiple heating trays 3 for simultaneously performing thin film deposition on multiple substrates w to improve the process efficiency of thin film deposition.

[0264] In this embodiment 23, as shown in Figures 20A and 20C, the multiple heating trays 3 inside each processing chamber 1 can be arranged in a matrix structure. Alternatively, in other embodiments, as shown in Figures 20B, 20D, and 20E, the multiple heating trays 3 inside each processing chamber 1 can be arranged in a triangular structure.

[0265] Optionally, multiple substrates w can be placed inside the cache device 003, and the centers of the multiple substrates w are on the same circle. The multiple substrates w can be rotated along the rotation axis perpendicular to the center of the circle to change the positions of the multiple substrates w inside the cache device 003.

[0266] As shown in Figures 20D and 20E , the interior of the buffer device 003 can accommodate three substrates w, which are arranged in a triangular configuration and are capable of rotation. The structure of the process robot 004 coordinates with the triangular configuration formed by the three substrates w within the buffer device 003 and the triangular configuration formed by the three heating trays 3 within the processing chamber 1. The process robot 004 includes three substrate transfer arms for loading and unloading substrates. The positions and number of the three substrate transfer arms correspond to the number of heating trays 3. The process robot 004 simultaneously removes three substrates w from the buffer device 003 and places them on the three heating trays 3 in the processing chamber 1, thereby improving the efficiency of the thin film deposition process.

[0267] Furthermore, as shown in FIG20E , there is one process robot 004 . The process robot 004 is a retractable arm. At the same time, the process robot 004 can rotate and swing left and right to pick up and place substrates w in different positions of the processing chamber 1 .

[0268] Example 24

[0269] This embodiment 24 provides a thin film deposition device, which differs from embodiment 23 in that:

[0270] As shown in FIG. 20F to FIG. 20I and FIG. 20K , a plurality of processing chambers 1 are sequentially arranged on the periphery of the process robot 004 .

[0271] As shown in FIG20G , there are five processing chambers 1 arranged sequentially around the periphery of the process robot 004. Three heating trays 3 are provided inside each processing chamber 1 for simultaneously depositing thin films on three substrates w, and the three heating trays 3 are arranged in a triangle structure.

[0272] In a preferred embodiment, the buffer device 003 is equipped with two storage platforms, each capable of accommodating three substrates w. One platform is used to hold substrates w to be deposited, with the deposited substrates w transferred out via the other platform. This dual-layer structure reduces waiting time for substrates w, facilitating increased throughput of the equipment. The two storage platforms can be independent of each other, with two rotating units driving their respective rotations. Alternatively, the two storage platforms can be connected, with both platforms placed on the same rotating unit and driven synchronously by a single rotating shaft.

[0273] Based on the overall operating speed of the device, the thin film deposition device can optionally be provided with multiple buffer devices 003. The multiple buffer devices 003 can be interconnected or not.

[0274] Preferably, as shown in FIG20J , the thin film deposition apparatus is equipped with two cache devices 003 , namely, cache device 0031 and cache device 0032 . Each cache device 003 is vertically equipped with three storage platforms 0033 . Each storage platform 0033 can be used to hold three substrates w. Cache device 0031 is driven by a rotation unit 7 , while cache device 0032 is driven by a rotation unit 8 . The three storage platforms 0033 within each cache device 0031 and 0032 are driven to rotate synchronously by a single rotation unit. The two cache devices 0031 and 0032 are arranged vertically, and the vertical spacing between them is within a preset range for the process robot 004 to access and place substrates w. Optionally, one of the three storage platforms 0033 can be left vacant, with the other two platforms used for accessing and placing substrates w. Depending on process requirements, the number of process robots 004 is not limited to one.

[0275] Furthermore, one side of one buffer device 0031 is open, and the front-end robot 001 removes a substrate w to be deposited from the substrate loading port 002 and places it on the buffer device 0031. Another side of the other buffer device 0032 is open, and the process robot 004 removes a pre-deposited substrate w from the processing chamber 1 and places it on the buffer device 0032. Conversely, the other side of the buffer device 0032 is open to place a substrate w to be deposited, while the other side of the buffer device 0031 is open to place a pre-deposited substrate w. In other words, the opening modes of the buffer devices 0031 and 0032 are staggered, improving production efficiency. The other configurations of this embodiment are the same as those of Example 23 and will not be repeated here.

[0276] Example 25

[0277] Please refer to Figure 21. This embodiment 25 provides a thin film deposition device, which includes: a processing chamber 1 for thin film deposition; a gas supply component 2, arranged on the top wall of the processing chamber 1, for supplying process gas to the inside of the processing chamber 1; a heating tray 3, arranged below the gas supply component 2, for carrying and heating the substrate w; a radio frequency source 5, for providing radio frequency power to excite the process gas inside the processing chamber 1 to dissociate into plasma gas, and the plasma gas is used to deposit a thin film on the substrate w; a lifting mechanism 402 is connected to the gas supply component 2, for driving the gas supply component 2 to move up and down.

[0278] Lifting mechanism 402 may be a cylinder 402. Cylinder 402 drives gas supply assembly 2 upward or downward to adjust the distance between gas supply assembly 2 and substrate w. Adjusting the distance between gas supply assembly 2 and substrate w to within a predetermined range further improves the uniformity of thin film deposition in the PECVD layer stack structure.

[0279] The twenty-fifth embodiment can be combined with any one of the above-mentioned embodiments one to thirteen to adjust the distance between the gas supply assembly 2 and the substrate w.

[0280] Example 26

[0281] Please refer to Figures 22-23. This embodiment 26 provides a thin film deposition device, which includes: a processing chamber 1 for thin film deposition; a gas supply assembly 2, arranged on the top wall of the processing chamber 1, for supplying process gas to the inside of the processing chamber 1; a heating tray 3, arranged below the gas supply assembly 2, for carrying and heating the substrate w; a radio frequency source 5, for providing radio frequency power to form an radio frequency electric field inside the processing chamber 1, to excite the process gas inside the processing chamber 1 to dissociate into plasma gas, and the dissociated plasma gas is used to deposit a thin film on the substrate w; a rotating mechanism 403 is connected to the heating tray 3, and is used to drive the heating tray 3 to rotate with the axis AA' passing through the center of the substrate w as the rotation axis.

[0282] The heating tray 3 can also be raised and lowered. The lifting mechanism 402 is connected to the heating tray 3 and is used to drive the heating tray 3 to move up and down. The support member is used to support the substrate w. The support member can be a support ring 404 and / or a top pin 401.

[0283] As shown in Figure 23, when the heating tray 3 needs to be rotated, the lifting mechanism 402 drives the heating tray 3 downward in the vertical direction, separating the heating tray 3 from the substrate w, and the support member supports the substrate w. The rotation mechanism 403 then drives the lifting mechanism 420 to rotate the heating tray 3 through a set angle. After the heating tray 3 rotates to the set angle, it stops rotating, and the lifting mechanism 402 drives the heating tray 3 upward in the vertical direction, placing the substrate w on the heating tray 3 for thin film deposition.

[0284] In addition, when the distance between the gas supply assembly 2 and the substrate w needs to be adjusted, the heating tray 3 rises or falls with the substrate w, thereby making the distance value within the preset range, further improving the uniformity of the PECVD layer stack structure thin film deposition.

[0285] Example 27

[0286] Referring to Figures 24-25, this embodiment 27 provides a thin film deposition device. Compared with the embodiment 26, the difference is that:

[0287] The thin film deposition apparatus further includes a support member and a second lifting mechanism 405. The support member is used to support the substrate w, wherein the support member can be a support ring 404 provided at the bottom edge of the substrate w, and the support ring 404 is a circular ring with a notch a as shown in FIG5 .

[0288] The first lifting mechanism 402 is connected to the rotating mechanism 403 and is used to drive the rotating mechanism 403 and the heating tray 3 to move up and down. The rotating mechanism 403 is located at the bottom end of the heating tray 3 and is used to drive the heating tray 3 to rotate about the axis AA' passing through the center of the substrate w, thereby driving the substrate w to rotate synchronously.

[0289] The second lifting mechanism 405 is connected to the support ring 404 and is used to drive the support ring 404 to rise or fall vertically to lift the substrate w off the heating tray 3 or place the substrate w on the heating tray 3. In addition, the second lifting mechanism 405 is also connected to the first lifting mechanism 402. The second lifting mechanism 405 drives the first lifting mechanism 402 and the support ring 404 to move up and down together, thereby driving the substrate w to move up and down to adjust the distance between the gas supply assembly 2 and the substrate w.

[0290] In this embodiment, as shown in Figure 25, when the heating tray 3 needs to be rotated, the second lifting mechanism 405 drives the support ring 404 to rise vertically, lifting the substrate w and separating the substrate w from the heating tray 3. The rotation mechanism 403 then drives the first lifting mechanism 402 and the heating tray 3 to rotate a set angle. After the heating tray 3 rotates to the set angle, it stops rotating. The second lifting mechanism 405 drives the support ring 404 to move vertically downward, placing the substrate w on the heating tray 3 for thin film deposition. Optionally, the first lifting mechanism 402 drives the heating tray 3 downward to separate the substrate w from the heating tray 3.

[0291] The support member may also be a pin that moves in the vertical direction, a first through hole is formed on the heating tray 3, and the pin is disposed in the first through hole. The second lifting mechanism 405 drives the pin to rise or fall in the vertical direction.

[0292] Example 28

[0293] Please refer to Figures 26-27. This embodiment 28 provides a thin film deposition device, which includes: a processing chamber 1 for thin film deposition; a gas supply assembly 2, arranged on the top wall of the processing chamber 1, for supplying process gas to the inside of the processing chamber 1; a heating tray 3, arranged below the gas supply assembly 2, for carrying and heating the substrate w; a radio frequency source 5, for providing radio frequency power to form an radio frequency electric field inside the processing chamber 1, to excite the process gas inside the processing chamber 1 to dissociate into plasma gas, and the dissociated plasma gas is used to perform thin film deposition on the substrate w; a lifting mechanism 402 is connected to the heating tray 3, for driving the heating tray 3 to move up and down.

[0294] The controller is connected to the gas supply assembly 2, the RF source 5, the heating tray 3, the rotating mechanism 403, and the lifting mechanism 402, respectively, and is used to control the operation of the gas supply assembly 2, the RF source 5, the heating tray 3, the rotating mechanism 403, and the lifting mechanism 402. The controller is also configured to construct a program menu, which includes keeping the RF source 5 on while the substrate w is rotating.

[0295] The thin film deposition device further includes: a support member for supporting the substrate w; and a rotating mechanism 403 connected to the support member for driving the support member and the substrate w to rotate.

[0296] As shown in FIG27 , the support member is a support ring 404 , which is provided at the bottom edge of the substrate w; a rotating mechanism 403 , connected to the support ring 404 , is used to drive the support ring 404 to rotate about the center line AA′ of the substrate w as the rotation axis.

[0297] When the substrate w needs to be rotated, the lifting mechanism 402 drives the heating tray 3 to descend in the vertical direction, separating the heating tray 3 from the support ring 404. The support ring 404 supports the substrate w. The rotating mechanism 403 drives the support ring 404 to rotate. The support ring 404 lifts the substrate w to adjust the set rotation angle of the substrate w, so as to realize the rotation of the substrate w around the rotation axis AA', compensate for the uneven thickness of the thin film deposited on the substrate w, and realize the uniformity and stability of the thin film deposition of the PECVD layer stack structure.

[0298] Example 29

[0299] Referring to Figures 28-29, this embodiment 29 provides a thin film deposition device. Compared with the embodiment 28, the difference is that:

[0300] The support member is a pin 401. A first through hole 301 is formed on the heating tray 3. The pin 401 is disposed in the first through hole 301. As shown in FIG3A and FIG3B , the cross-section of the first through hole 301 in the horizontal plane is arc-shaped or circular, and the center M of the arc or circle is on a vertical line with the center O of the substrate w. When the substrate w needs to be rotated, the lifting mechanism 402 drives the heating tray 3 to descend in the vertical direction to separate the heating tray 3 from the substrate w. The pin 401 lifts the substrate w. The pin 401 supports the substrate w. The rotating mechanism 403 drives the pin 401 to move along an arc trajectory in the first through hole 301 to rotate the substrate w to a set angle. After the substrate w rotates to the set angle, the substrate w stops rotating. The lifting mechanism 402 drives the heating tray 3 to rise in the vertical direction and places the substrate w on the heating tray 3 for subsequent thin film deposition.

[0301] Example 30

[0302] Referring to Figures 30-31, this embodiment 30 provides a thin film deposition device, which differs from the embodiment 28 in that:

[0303] The support member includes ejector pins 401 and a support ring 404. The thin film deposition apparatus includes a first lifting mechanism 402 and a second lifting mechanism 405. The first lifting mechanism 402 is connected to the heating tray 3 and is used to drive the heating tray 3 to move up and down. The second lifting mechanism 405 is connected to the ejector pins 401 and is used to drive the ejector pins 401 to rise or fall in the vertical direction, allowing the robot to remove the substrate w from the heating tray 3 or place the substrate w on the heating tray 3.

[0304] Example 31

[0305] Referring to Figures 32-33, this embodiment 31 provides a thin film deposition device. Compared with the embodiment 30, the difference is that:

[0306] The thin film deposition apparatus further includes a third lifting mechanism 406 , which is connected to the support ring 404 .

[0307] In this embodiment, the second lifting mechanism 405 drives the ejector pin 401 to rise or fall in the vertical direction, so that the manipulator can remove the substrate w from the heating tray 3 or place the substrate w on the heating tray 3. The first lifting mechanism 402 drives the heating tray 3 to move up and down, and the third lifting mechanism 406 drives the support ring 404 and the substrate w to move up and down. The heating tray 3 and the substrate w move synchronously under the drive of the first lifting mechanism 402 and the third lifting mechanism 406 respectively to adjust the distance between the gas supply assembly 2 and the substrate w, so that the distance value is within a preset range, further improving the uniformity of the thin film deposition of the PECVD layer stack structure. Optionally, the third lifting mechanism 406 is connected to the first lifting mechanism 402 and the support ring 404 respectively, and the third lifting mechanism 406 drives the first lifting mechanism 402 and the support ring 404 to move up and down in the vertical direction at the same time.

[0308] When the substrate w needs to be rotated, the third lifting mechanism 406 drives the support ring 404 to rise in the vertical direction, the support ring 404 separates from the heating tray 3, the support ring 404 supports the substrate w, and the rotating mechanism 403 drives the support ring 404 to rotate, and the support ring 404 lifts the substrate w to adjust the rotation setting angle of the substrate w.

[0309] Example 32

[0310] Please refer to Figures 35-36. This embodiment 32 provides a thin film deposition device. Compared with embodiment 28, the difference is that the thin film deposition device further includes a pin 401 and a second lifting mechanism 405, and the lifting mechanism 402 is a first lifting mechanism 402.

[0311] The first lifting mechanism 402 drives the heating tray 3 to move, and the second lifting mechanism 405 is connected to the support ring 404 to drive the support ring 404 to rise or fall in the vertical direction. A first through hole 301 is formed on the heating tray 3, and the ejector pin 401 is arranged in the first through hole 301. The lower end of the ejector pin 401 abuts against the base 6, and the base 6 is connected to the bottom of the processing chamber 1. The height of the base 6 is pre-set according to the height of the substrate w transferred to the processing chamber 1. When the ejector pin 401 abuts against the base 6, the upper end of the ejector pin 401 is higher than the support ring 404 and the heating tray 3, and the upper end of the ejector pin 401 is used to receive the substrate w.

[0312] Driven by the first and second lifting mechanisms 402 and 405, respectively, the heating tray 3 and substrate w move synchronously to adjust the distance between the gas supply assembly 2 and substrate w. In one embodiment, the heating tray 3 has a recess corresponding to the position of the ejector pin 401, and the tip of the ejector pin 401 has a protrusion. As the heating tray 3 moves upward, the protrusion of the ejector pin 401 is received in the recess, and the heating tray 3 continues to move upward, carrying the ejector pin 401 with it. After the ejector pin 401 moves upward, it separates from the base 6, and the ejector pin 401 is suspended.

[0313] When the substrate w needs to be rotated, the second lifting mechanism 405 drives the support ring 404 to rise in the vertical direction, the support ring 404 is separated from the heating tray 3, the support ring 404 supports the substrate w, and the rotating mechanism 403 drives the support ring 404 to rotate to adjust the rotation setting angle of the substrate w.

[0314] Example 33

[0315] Please refer to Figure 37. This embodiment 33 provides a thin film deposition device, which includes: a processing chamber 1 for thin film deposition; a gas supply assembly 2, arranged on the top wall of the processing chamber 1, for supplying process gas to the inside of the processing chamber 1; a heating tray 3, arranged below the gas supply assembly 2, for carrying and heating the substrate w; a radio frequency source 5, for providing radio frequency power to excite the process gas inside the processing chamber 1 to dissociate into plasma gas, and the plasma gas is used to deposit a thin film on the substrate w; a top pin 401, arranged in the heating tray 3, one end of the top pin 401 is arranged at the bottom of the processing chamber 1, and the other end of the top pin 401 is used to receive the substrate w.

[0316] In this embodiment, each processing chamber 1 is equipped with three heating trays 3 for simultaneously depositing thin films on three substrates w. The thin film deposition apparatus includes three groups of ejector pins. Each group of ejector pins includes three ejector pins 401, each of which is of the same height and is used to receive a substrate w. Each group of ejector pins has a different height.

[0317] Preferably, the heights of the three groups of ejectors are stepped, and the received substrates w are correspondingly configured in a stepped shape. The three heating trays 3 are arranged in a triangular structure. The structure of the process robot 004 matches the triangular structure formed by the three heating trays 3 in the processing chamber 1. The process robot 004 places the three substrates w in order from high to low according to the heights of the three groups of ejectors. Specifically, as shown in Figure 37, the substrate w1 is first centered with the heating tray 3 corresponding to the ejector pin 4011. After the alignment is completed, the substrate w1 is placed on the heating tray 3. Then, the substrate w2 is centered with the heating tray 3 corresponding to the ejector pin 4012 and then the substrate w2 is placed. Similarly, the substrate w3 is first centered with the heating tray 3 corresponding to the ejector pin 4013 and then placed on the heating tray 3. The above arrangement improves the centering accuracy of the three substrates w and their respective heating trays 3. In addition, the ejector pin 401 can be centered without lifting, which simplifies the structure of the thin film deposition device.

[0318] Example 34

[0319] Referring to Figures 38 and 39, this embodiment 34 provides a thin film deposition device. Compared with embodiment 1, the difference is:

[0320] As shown in Figure 38, the thin film deposition device also includes a supporting mechanism for supporting the substrate w, which includes a pin 501 and a support ring 504. A through hole 301 is formed on the heating tray 3, and the pin 501 is located in the through hole 301. The first lifting mechanism 502 is connected to the pin 501, driving the pin 501 to rise or fall in the vertical direction, so that the robot can remove the substrate w from the heating tray 3 or place the substrate w on the heating tray 3. The support ring 504 is arranged below the edge of the substrate w to support the substrate w. The supporting mechanism also includes a support shaft 505 arranged below the support ring 504, and the support shaft 505 is not fixedly connected to the support ring 504. The lifting mechanism includes a first lifting mechanism 502 and a second lifting mechanism. In a specific embodiment, the second lifting mechanism is connected to the support shaft 505, and is used to drive the support shaft 504 to rise until it contacts the support ring 504, then lift the substrate w to separate the substrate w from the heating tray 3 or lower it to place the substrate w on the heating tray 3. In another specific embodiment, the support shaft 505 is fixed, and the first lifting mechanism 502 drives the heating tray 3 to rise and fall to achieve the support and separation of the support shaft 505 and the support ring 504.

[0321] In this embodiment 34, the rotating mechanism 503 is disposed at the bottom of the first lifting mechanism 502 and is used to drive the first lifting mechanism 502 to rotate about the centerline AA' of the substrate w, thereby driving the heating tray 3 to rotate. The rotating mechanism 503 can also directly drive the heating tray 3 to rotate.

[0322] FIG39 shows an enlarged partial view of area A in FIG38 . The heating tray 3 is configured with a centrally raised substrate support portion 148 and an edge portion 147. The diameter of the substrate support portion 148 is smaller than the diameter of the substrate w, and the height difference between the substrate support portion 148 and the edge portion 147 is 0.3-0.7 mm. The thickness of the support ring 504 is the same as the height difference between the substrate support portion 148 and the edge portion 147. During the thin film deposition process, the support ring 504 is separated from the support shaft 505 and supported by the edge portion 147 of the heating tray 3. The upper surface of the support ring 504 is in contact with the substrate w, and the lower surface is in contact with the heating tray 3. This improves heat conduction to the substrate w and prevents insufficient temperature at the edge of the substrate w. The inner diameter of the support ring 504 is smaller than the diameter of the substrate support portion 148. When the support ring 504 is placed on the edge portion 147, a gap is left between the support ring 504 and the substrate support portion 148 to prevent excessive particles on the substrate w caused by friction between the support ring 504 and the heating tray 3. The upper surface of the support ring 504 is provided with a first step 5041 and a second step 5042. The second step 5042 is higher than the first step 5041, and the first step 5041 is flush with the surface of the substrate support portion 148. A substrate w is placed on the first step 5041 of the support ring 504 to prevent shaking. The first step 5041 and the second step 5042 are connected by a slope. The slope of the support ring 504 serves as a guide when the substrate w is placed on the heating tray 3.

[0323] Referring to Figures 40A-40D, the present invention also discloses a process for performing a thin film deposition process using the thin film deposition apparatus provided in this embodiment. The specific process includes:

[0324] S1: The robot places the substrate w into the processing chamber. The first lifting mechanism 502 drives the ejector pins 501 to rise vertically and extend from the through-hole 301 to carry the substrate w placed by the robot. The first lifting mechanism 502 then drives the ejector pins 501 to descend vertically. The ejector pins 501 retract into the through-hole 301, placing the substrate w on the heating tray 3.

[0325] S2: depositing a thin film of a first thickness on the substrate w. FIG38 shows the state of the apparatus performing the first thin film deposition on the substrate w.

[0326] S3: Rotating mechanism 503 rotates first lifting mechanism 502, simultaneously rotating heating tray 3 and substrate w from the first position (initial position) by a first angle to the second position. As shown in FIG40A , the position of ejector pins 501 changes relative to FIG38 . In this step, support ring 504 rotates along with heating tray 3.

[0327] S4: The first lifting mechanism 502 drives the heating tray 3 downward, driving the substrate w and the support ring 504 downward together until the support ring 504 contacts the support shaft 505. After the support ring 504 is supported by the support shaft 505, it stops descending together with the substrate w. At this time, the first lifting mechanism 502 continues to descend until the heating tray 3 is separated from the substrate w. In this step, the first lifting mechanism 502 can also be inactive, and the second lifting mechanism can drive the support shaft 505 upward until it contacts the support ring 504 and then continue to rise to separate the substrate w from the heating tray 3. In this step, the first lifting mechanism 502 and the second lifting mechanism can also work together, with the first lifting mechanism 502 driving the heating tray 3 downward and the second lifting mechanism driving the support shaft 505 upward, driving the support ring 504 and the substrate w upward to separate the support ring 504 from the heating tray 3.

[0328] S5: The rotating mechanism 503 drives the first lifting mechanism 502 to rotate again, and at the same time drives the heating tray 3 to rotate the second angle to the third position. After this step is completed, the relative position of the substrate w and the heating tray 3 can be changed. Preferably, in this step, the heating tray 3 is rotated to the initial position, which can be directly returned to the initial position or continued to be rotated to the initial position. As shown in Figure 40C, the position of the ejector pin 501 has returned to the initial position shown in Figure 38. At this time, the relative position of the substrate w and the heating tray 3 has changed. In this step, the support ring 504 does not rotate, and the rotating mechanism 503 can also directly drive the heating tray 3 to rotate.

[0329] S6: The first lifting mechanism 502 drives the heating tray 3 upward, driving the substrate w and the support ring 504 upward together until the heating tray 3 contacts the substrate w. During this step, the first lifting mechanism 502 may be inactive, with the second lifting mechanism driving the support shaft 505 downward until the substrate w contacts the heating tray 3. Alternatively, the first and second lifting mechanisms may operate together, with the first lifting mechanism 502 driving the heating tray 3 upward and the second lifting mechanism driving the support shaft 505 downward, driving the support ring 504 and the substrate w downward, to contact the support ring 504 with the heating tray 3.

[0330] S7: depositing a thin film of a second thickness on the substrate w.

[0331] S8: Repeat S3-S7 until n times of thin film deposition are completed.

[0332] S9: When the robot takes away the substrate w from the inside of the processing chamber, the first lifting mechanism 502 drives the ejector pin 501 to rise in the vertical direction, extend from the through hole of the heating tray 3, and lift the substrate w from the heating tray 3 to facilitate the robot to take away the substrate w. Then the first lifting mechanism 502 drives the ejector pin 501 to descend in the vertical direction, and the ejector pin 501 retracts into the through hole.

[0333] When the rotating mechanism 503 drives the heating tray 3 to rotate, the process gas supply to the processing chamber is stopped, and an inert gas or nitrogen is introduced into the processing chamber to maintain the pressure within the processing chamber, and the RF source is kept on. Because after a certain number of thin film layers are deposited on substrate w, some impurity particles are suspended in the processing chamber. At this time, the RF source is kept on, and the processing chamber is filled with an RF electric field. The impurity particles are charged by the RF electric field inside the processing chamber, and the charged impurity particles remain suspended and will not fall on the surface of substrate w. This effectively prevents impurity particles from falling on the thin film deposited on substrate w, avoiding contamination of the thin film deposited on substrate w.

[0334] The other configurations of this embodiment are the same as those of the first embodiment and will not be described again here.

[0335] Example 35

[0336] Referring to Figures 41 and 42, this embodiment 35 provides a thin film deposition device. Compared with embodiment 34, the difference is:

[0337] As shown in Figure 41, the support shaft 505 of the thin film deposition device is fixedly connected to the support ring 504. In one embodiment, the second lifting mechanism is connected to the support shaft 505 and is driven to rise and fall by the support shaft 505. In another embodiment, the support shaft 505 is fixed.

[0338] FIG42 is a partial enlarged view of area B in FIG41 . The heating tray 3 is configured with a centrally raised substrate support portion 148 and an edge portion 147. The diameter of the substrate support portion 148 is smaller than the diameter of the substrate w, and the height difference between the substrate support portion 148 and the edge portion 147 is 1.5-2.9 mm. The thickness of the support ring 504 is 0.3-0.7 mm. When the substrate w is placed on the heating tray 3, the support ring 504 can move up and down within the space between the substrate w and the edge portion 147. During the thin film deposition process, the second lifting mechanism drives the support shaft 505 upward, bringing the support ring 504 to the same height as the substrate support portion 148. Alternatively, the support shaft 505 remains stationary, and the first lifting mechanism 502 drives the heating tray 3 downward to the same height as the support ring 504. At this point, the support ring 504 and the heating tray 3 are not in contact, and the support ring 504 and the heating tray 3 support the substrate w.

[0339] Referring to Figures 43A-43D, the present invention also discloses a process for performing a thin film deposition process using the thin film deposition apparatus provided in this embodiment. The specific process includes:

[0340] S1: The robot places the substrate w into the processing chamber. The first lifting mechanism 502 drives the ejector pins 501 to rise vertically and extend from the through-hole 301 to carry the substrate w placed by the robot. The first lifting mechanism 502 then drives the ejector pins 501 to descend vertically. The ejector pins 501 retract into the through-hole 301, placing the substrate w on the heating tray 3.

[0341] S2: depositing a thin film of a first thickness on the substrate w. FIG41 shows the state of the apparatus performing the first thin film deposition on the substrate w.

[0342] S3: The first lifting mechanism 502 drives the heating tray 3 upward until the support ring 504 is no longer in contact with the substrate w and the heating tray 3, or the second lifting mechanism drives the support shaft 505 downward, driving the support ring 504 downward until it is no longer in contact with the substrate w and the heating tray 3, or the first lifting mechanism 502 and the second lifting mechanism work together, with the first lifting mechanism 502 driving the heating tray 3 upward and the second lifting mechanism driving the support shaft 505 and driving the support ring 504 downward until the support ring 504 is no longer in contact with the substrate w and the heating tray 3. The rotation mechanism 503 drives the first lifting mechanism 502 to rotate, simultaneously driving the heating tray 3 and the substrate w to rotate from the first position (initial position) to the second position by a set angle. As shown in FIG43A , the position of the ejector pin 501 changes relative to FIG41 . In this step, the support ring 504 does not rotate; the rotation mechanism 503 may also directly drive the heating tray 3 to rotate.

[0343] S4: The first lifting mechanism 502 drives the heating tray 3 downward, driving the substrate w downward until the substrate w contacts the support ring 504. After the substrate w is supported by the support ring 504, it stops descending. At this time, the first lifting mechanism 502 continues to descend until the heating tray 3 is separated from the substrate w. In this step, the first lifting mechanism 502 can also be inactive, and the second lifting mechanism can drive the support shaft 505 upward and drive the support ring 504 upward until the support ring 504 contacts the substrate w, and then continue to rise to separate the substrate w from the heating tray 3. In this step, the first lifting mechanism 502 and the second lifting mechanism can also work together, with the first lifting mechanism 502 driving the heating tray 3 downward and the second lifting mechanism driving the support shaft 505 and support ring 504 upward to separate the support ring 504 from the heating tray 3.

[0344] S5: The rotating mechanism 503 drives the first lifting mechanism 502 to rotate again, and at the same time drives the heating tray 3 to rotate the second angle to the third position. After this step is completed, the relative position of the substrate w and the heating tray 3 can be changed. Preferably, in this step, the heating tray 3 is rotated to the initial position, which can be directly returned to the initial position or continued to be rotated to the initial position. As shown in Figure 43C, the position of the ejector pin 501 has returned to the initial position shown in Figure 41. At this time, the relative position of the substrate w and the heating tray 3 has changed. In this step, the rotating mechanism 503 can also directly drive the heating tray 3 to rotate.

[0345] S6: The first lifting mechanism 502 drives the heating tray 3 upward until it contacts the substrate w. During this step, the first lifting mechanism 502 may be inactive, with the second lifting mechanism driving the support shaft 505 downward until the substrate w contacts the heating tray 3. Alternatively, the first and second lifting mechanisms 502 and 505 may work together, with the first lifting mechanism 502 driving the heating tray 3 upward while the second lifting mechanism drives the support shaft 505 downward, bringing the support ring 504 and the substrate w downward until the substrate w contacts the heating tray 3.

[0346] S7: depositing a thin film of a second thickness on the substrate w.

[0347] S8: Repeat S3-S7 until n times of thin film deposition are completed.

[0348] S9: When the robot takes away the substrate w from the inside of the processing chamber, the first lifting mechanism 502 drives the ejector pin 501 to rise in the vertical direction, extend from the through hole of the heating tray 3, and lift the substrate w from the heating tray 3 to facilitate the robot to take away the substrate w. Then the first lifting mechanism 502 drives the ejector pin 501 to descend in the vertical direction, and the ejector pin 501 retracts into the through hole.

[0349] It should be noted that, provided that the technical solutions are logically accurate, the above-mentioned embodiments can be combined with each other to form new solutions, that is, certain features, structures, or characteristics in one or more embodiments of the present application can be appropriately combined. These new solutions will not be described in detail here.

[0350] The present invention, through the above-described embodiments and related illustrations, has specifically and fully disclosed the relevant technologies, enabling those skilled in the art to implement the invention accordingly. The above-described embodiments are intended only to illustrate the present invention and are not intended to limit the present invention. The scope of the present invention is defined by the claims. Any changes in the number of components described herein or substitution of equivalent components shall remain within the scope of the present invention.

[0351] At the same time, the present invention uses specific terms to describe embodiments of the present invention. For example, "one embodiment," "an embodiment," and / or "some embodiments" refer to a particular feature, structure, or characteristic associated with at least one embodiment of the present invention. Therefore, it should be emphasized and noted that the mention of "one embodiment," "an embodiment," or "an alternative embodiment" two or more times in different places in this specification does not necessarily refer to the same embodiment.

[0352] Similarly, it should be noted that, in order to simplify the presentation of the present disclosure and facilitate understanding of one or more embodiments of the invention, the foregoing descriptions of the embodiments of the invention sometimes combine multiple features into a single embodiment, figure, or description thereof. However, this disclosure method does not imply that the subject matter of the invention requires more features than those recited in the claims. In practice, an embodiment may have fewer features than the totality of the features of a single embodiment disclosed above.

Claims

1. A thin film deposition device, characterized in that: include: a processing chamber for performing thin film deposition; A heating tray, used for carrying and heating the substrate, wherein the heating tray is configured as a substrate supporting portion with a middle protrusion and an edge portion for placing a supporting ring; A supporting mechanism, comprising a supporting ring disposed around the substrate supporting portion and a supporting shaft for supporting the supporting ring; A lifting mechanism, used for driving the support shaft to lift and / or driving the heating tray to lift and / or A rotating mechanism, used for driving the heating tray to rotate; The thin film deposition device is configured as follows: after a thin film deposition is completed, the rotating mechanism drives the heating tray to rotate the substrate from a first position to a second position; after the rotation is completed, the heating tray is separated from the substrate, and the substrate is supported by the support ring; the rotating mechanism drives the heating tray to rotate to a third position, while the support ring and the substrate remain in the second position; the next thin film deposition is performed after the heating tray contacts the substrate.

2. The thin film deposition device according to claim 1, characterized in that: The third position is the same as the first position.

3. The thin film deposition device according to claim 1, characterized in that: The inner diameter of the support ring is greater than the outer diameter of the substrate supporting portion.

4. The thin film deposition device according to claim 1, characterized in that: The support shaft is non-fixedly connected to the support ring.

5. The thin film deposition device according to claim 4, characterized in that: A surface height difference between the substrate supporting portion and the edge portion is the same as a thickness of the supporting ring.

6. The thin film deposition device according to claim 5, characterized in that: The support ring has a thickness of 0.3-0.7 mm.

7. The thin film deposition device according to claim 1, characterized in that: The support ring is fixedly connected to the support shaft.

8. The thin film deposition device according to claim 7, characterized in that: The surface height difference between the substrate supporting portion and the edge portion is 1.5-2.9 mm.

9. The thin film deposition device according to claim 8, characterized in that: The support ring has a thickness of 0.3-0.7 mm.

10. The thin film deposition device according to claim 7, characterized in that: When the rotating mechanism drives the heating tray to rotate together with the substrate, the supporting ring is kept in a non-contact state with the heating tray and the substrate.

11. A thin film deposition method, characterized in that: include: Placing a substrate in a processing chamber and depositing a thin film of a first thickness on the substrate; The heating tray drives the substrate to rotate from the first position to the second position; The heating tray is separated from the substrate, the support ring supports the substrate, and the heating tray rotates from the second position to the third position; The heated tray is brought into contact with the substrate to deposit a thin film of a second thickness.

12. The thin film deposition method according to claim 11, characterized in that: The first position is the same as the third position.

13. The thin film deposition method according to claim 11, characterized in that: The heating tray is separated from the substrate by the lifting mechanism driving the heating tray to descend.

14. The thin film deposition method according to claim 11, characterized in that: The separation of the heating tray from the substrate is achieved by the lifting mechanism driving the heating tray downward and driving the supporting shaft upward.

15. The thin film deposition method according to claim 11, characterized in that: The separation of the heating tray and the substrate is achieved by the lifting mechanism driving the supporting shaft to rise.

16. The thin film deposition method according to claim 11, characterized in that: The support shaft and the support ring are not fixedly connected, and the support and separation between the two are achieved through relative movement.

17. The thin film deposition method according to claim 16, characterized in that: When a thin film is deposited on a substrate, the upper surface of the support ring is in contact with the substrate, and the lower surface of the support ring is in contact with the heating tray.

18. The thin film deposition method according to claim 16, characterized in that: When the heating tray drives the substrate to rotate, the support ring and the support shaft are in a separated state, and the support ring is driven by the heating tray to rotate together.

19. The thin film deposition method according to claim 11, characterized in that: The support ring is fixedly connected to the support shaft, and the support ring is driven to rise and fall by the support shaft.

20. The thin film deposition method according to claim 19, characterized in that: After the support shaft drives the support ring to descend until it is not in contact with the substrate and the heating tray, the heating tray drives the substrate to rotate, and the support ring does not rotate.

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