Semiconductor device production method and dicing–die bonding integrated film

Abstract

This semiconductor device production method includes: a step for, in a heated condition, affixing a film B of a dicing–die bonding integrated film which includes a dicing film (film A) that has a base material film and an adhesive layer provided on the base material film and a die bonding film (the film B) that is provided on the adhesive layer to a plurality of semiconductor chips obtained by singulating a semiconductor wafer; and a step for expanding the film A in a cooled condition, thereby singulating the film B, and manufacturing semiconductor chips with film B pieces, each comprising a semiconductor chip and a film B piece obtained by singulating the film B. The film B has a thickness of 20 μm or less. The tensile stress when stretched by 20% at 0°C via a tensile test of the film A is 15 MPa or greater. The thermal shrinkage at 70°C via thermomechanical analysis is 5% or less.

Description

Semiconductor device manufacturing method and dicing / die bonding integrated film

[0001] The present disclosure relates to a method for manufacturing a semiconductor device and a dicing and die bonding integrated film.

[0002] A dicing and die-bonding integrated film, which is an integrated combination of a dicing film having a base film and an adhesive layer for fixing a semiconductor wafer during the process of dividing the semiconductor wafer, and a die-bonding film for bonding between a substrate or another semiconductor chip, is sometimes used for manufacturing semiconductor devices (semiconductor packages) (see, for example, Patent Documents 1 and 2). The die-bonding film constituting the dicing and die-bonding integrated film generally has a thickness of about several tens of μm.

[0003] In recent years, methods for singulating semiconductor wafers, such as the Stealth Dicing Before Grinding (SDBG) method and the Dicing Before Grinding (DBG) method, have been put into practical use (see, for example, Patent Document 3). The SDBG method involves forming a modified region inside a semiconductor wafer by irradiating it with laser light, grinding (polishing) the semiconductor wafer from the backside, and cleaving the semiconductor wafer using the modified region as a dividing point to singulate the semiconductor wafer into multiple semiconductor chips. The DBG method involves forming grooves of a predetermined depth on the front side of a semiconductor wafer using a dicing blade or the like, and then grinding (polishing) the semiconductor wafer from the backside down to the groove to singulate the semiconductor wafer into multiple semiconductor chips. A die bonding film of a dicing-die bonding integrated film is attached to the multiple semiconductor chips singulated by these methods under heated conditions. The dicing film is then expanded under cooling conditions (cooling expansion) to separate the die bonding film, thereby obtaining a semiconductor chip with a die bonding film piece, which has a semiconductor chip and a die bonding film piece obtained by separating the die bonding film. The obtained semiconductor chip with the die bonding film piece is then picked up and mounted on a substrate or another semiconductor chip, thereby manufacturing a semiconductor device.

[0004] JP 2019-175958 A International Publication No. 2018 / 105613 JP 2022-179420 A

[0005] With the increasing number of semiconductor chips stacked in semiconductor devices and the thinning of semiconductor chips, the use of extremely thin die bonding films (e.g., 20 μm or less) is desired. However, according to the inventors' research, in a semiconductor device manufacturing method comprising a step of attaching a die bonding film of a dicing / die bonding integrated film to multiple semiconductor chips under heating conditions (e.g., 60°C or higher) and a step of expanding the dicing film under cooling conditions (e.g., 0°C or lower) to singulate the die bonding film and produce semiconductor chips with die bonding film pieces, it was found that when an extremely thin die bonding film is used as the die bonding film of a dicing / die bonding integrated film, the die bonding film tends to be difficult to separate during cooling and expanding. If the die bonding film is not easily separated, it becomes difficult to pick up the semiconductor chips with die bonding film pieces, which may reduce the yield in the manufacturing of semiconductor devices.

[0006] Therefore, a main object of the present disclosure is to improve the cooling separation property of a die bonding film having a thickness of 20 μm or less in a predetermined method for manufacturing a semiconductor device.

[0007] FIG. 4 is a plan view schematically showing the state after the semiconductor wafer has been singulated. FIG. 4 shows that a plurality of semiconductor chips C obtained by singulating the semiconductor wafer are present on the die bonding film 1. After the semiconductor wafer has been singulated, the semiconductor wafer can be divided into an end portion (region indicated by X in FIG. 4 ) in the MD direction (machine direction, a direction parallel to the longitudinal direction (flow direction) of the raw roll from which the base film is provided) of the semiconductor wafer and a central portion (region indicated by Y in FIG. 4 ) other than the end portion. The end portion of the semiconductor wafer can be defined as the region extending from both ends of the semiconductor wafer in the MD direction to the dicing line at a predetermined position (e.g., the fifth line). The central portion of the semiconductor wafer can be defined as the region other than the end portion of the semiconductor wafer.

[0008] The present inventors have investigated the cooling separability of die bonding films and found that, in a dicing / die bonding integrated film, if the tensile stress of the dicing film under cooling conditions is too low, the cooling separability of the die bonding film tends to decrease, particularly at the center of the semiconductor wafer (see Figure 4). Further investigation by the present inventors has found that the kerf width (gap between semiconductor chips) between semiconductor chips after the die bonding film of the dicing / die bonding integrated film is attached to multiple semiconductor chips under heating conditions correlates with the cooling separability of the die bonding film, and that if the kerf width is too wide, stress during cooling expansion is dispersed, and the cooling separability of the die bonding film tends to decrease, particularly at the edge of the semiconductor wafer (see Figure 4). The inventors conducted a detailed investigation into the cause of the widening of the kerf width and discovered that the widening occurs when the die bonding film of a dicing / die bonding integrated film is heated when it is attached to multiple semiconductor chips, causing the dicing film to thermally shrink, and this thermal shrinkage pulls the die bonding film in the direction of expansion.

[0009] Based on the above findings, the inventors focused on the tensile stress under cooling conditions and the thermal shrinkage rate under heating conditions of a dicing film in a dicing / die bonding integrated film, and discovered that the above problems can be solved by adopting a dicing film in which these values ​​fall within a predetermined range, thereby completing the invention of the present disclosure.

[0010] The present disclosure includes [1] to [5]. [1] A method for manufacturing a semiconductor device, comprising: (A) a step of attaching, under heating conditions, a dicing film of a dicing-die bonding integrated film including a base film and a pressure-sensitive adhesive layer provided on the base film, and a die bonding film provided on the pressure-sensitive adhesive layer, to a plurality of semiconductor chips obtained by singulating a semiconductor wafer; and (B) a step of expanding the dicing film under cooling conditions to singulate the die bonding film, thereby producing semiconductor chips with die bonding film pieces, each of which has the semiconductor chip and the die bonding film pieces obtained by singulating the die bonding film; wherein the die bonding film has a thickness of 20 μm or less, and the dicing film has a tensile stress of 15 MPa or more when stretched 20% at 0°C in a tensile test, and a thermal shrinkage of 5% or less at 70°C in thermomechanical analysis. [2] A method for manufacturing a semiconductor device according to [1], wherein the dicing film has a maximum thermal shrinkage of 10% or more between 80 and 140°C in thermomechanical analysis. [3] The method for manufacturing a semiconductor device according to [1] or [2], wherein the method for dicing the semiconductor wafer in (A) is a stealth dicing method or a half-cut dicing method. [4] A dicing film having a base film and a pressure-sensitive adhesive layer provided on the base film, and a die bonding film provided on the pressure-sensitive adhesive layer, wherein the die bonding film has a thickness of 20 μm or less, and the dicing film has a tensile stress of 15 MPa or more when stretched 20% at 0°C in a tensile test, and a thermal shrinkage of 5% or less at 70°C in thermomechanical analysis. [5] The dicing film has a maximum thermal shrinkage of 10% or more between 80 and 140°C in thermomechanical analysis.

[0011] According to the present disclosure, in a predetermined method for manufacturing a semiconductor device, it is possible to improve the cooling separation property of a die bonding film having a thickness of 20 μm or less.

[0012] FIG. 1 is a cross-sectional view schematically showing one embodiment of a dicing / die bonding integrated film. FIG. 2 is a cross-sectional view schematically showing a method for manufacturing a semiconductor device, with FIGS. 2(a), 2(b), and 2(c) being cross-sectional views schematically showing each step. FIG. 3 is a cross-sectional view schematically showing a method for manufacturing a semiconductor device, with FIGS. 3(a) and 3(b) being cross-sectional views schematically showing each step. FIG. 4 is a top view schematically showing a state after a semiconductor wafer has been singulated. FIG. 5 is a top view showing measurement points in measuring the kerf width after bonding in an example, with FIG. 5(a) being a top view showing the measurement points at the edge of the semiconductor wafer and FIG. 5(b) being a top view showing the measurement points at the center of the semiconductor wafer. FIG. 6 is a top view showing measurement points in measuring the kerf width after heat shrinkage in an example.

[0013] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings as appropriate. However, the present disclosure is not limited to the following embodiments. In the following embodiments, components (including steps, etc.) are not essential unless specifically stated. The sizes of the components in each figure are conceptual, and the relative size relationships between the components are not limited to those shown in each figure.

[0014] The same applies to the numerical values ​​and ranges in this specification, and do not limit the present disclosure. In this specification, a numerical range indicated using "to" indicates a range that includes the numerical values ​​before and after "to" as the minimum and maximum values, respectively. In the numerical ranges described in stages in this specification, the upper or lower limit value described in one numerical range may be replaced with the upper or lower limit value of another numerical range described in stages. Furthermore, in the numerical ranges described in this specification, the upper or lower limit value of that numerical range may be replaced with a value shown in the examples.

[0015] In this specification, "(meth)acrylate" means at least one of an acrylate and the corresponding methacrylate. The same applies to other similar expressions such as "(meth)acryloyl". Furthermore, "(poly)" means both the presence and absence of the prefix "poly". Furthermore, "A or B" may contain either A or B, or may contain both. Furthermore, unless otherwise specified, the materials exemplified below may be used alone or in combination of two or more. When multiple substances corresponding to each component are present in the composition, the content of each component in the composition means the total amount of the multiple substances present in the composition, unless otherwise specified.

[0016] [Dicing and die bonding integrated film] Fig. 1 is a cross-sectional view schematically showing one embodiment of a dicing and die bonding integrated film. The dicing and die bonding integrated film 10 shown in Fig. 1 comprises a die bonding film 1 (hereinafter sometimes referred to as an "adhesive layer") and a dicing film 5 having a pressure-sensitive adhesive layer 2 attached to the die bonding film 1. The dicing film 5 has a base film 3 and the pressure-sensitive adhesive layer 2 provided on the base film 3.

[0017] The die bonding film 1 is an adhesive film for bonding a semiconductor chip to a substrate or another semiconductor chip, and is also called a die attach film (DAF). The die bonding film 1 has, for example, a circular main surface that covers the entire main surface of a semiconductor wafer.

[0018] The die bonding film 1 (adhesive layer) has a thickness of 20 μm or less. A thickness of 20 μm or less of the die bonding film 1 is advantageous for, for example, the production of a thin semiconductor package having multiple semiconductor chips. The thickness of the die bonding film 1 may be, for example, 18 μm or less, 16 μm or less, 14 μm or less, 12 μm or less, or 10 μm or less, or may be 1 μm or more, 2 μm or more, 3 μm or more, 4 μm or more, or 5 μm or more.

[0019] The die bonding film 1 may be a film formed from an adhesive that is commonly used for bonding semiconductor chips. The die bonding film 1 may be a thermosetting adhesive. The thermosetting adhesive that constitutes the die bonding film 1 contains, for example, a thermosetting component and a high-molecular-weight resin component (elastomer).

[0020] The thermosetting component is a compound (resin) having a reactive group that forms a crosslinked structure by self-polymerization and / or reaction with a curing agent. The thermosetting component may contain, for example, an epoxy resin, or may contain, in addition to the epoxy resin, a phenolic resin that acts as a curing agent for the epoxy resin. The content of the thermosetting component may be 5 to 30 parts by mass relative to 100 parts by mass of the total amount of the die bonding film.

[0021] The high-molecular-weight resin component (elastomer) may contain, for example, at least one resin selected from the group consisting of acrylic rubber, polyimide, and phenoxy resin, or may contain acrylic rubber. The high-molecular-weight resin component may have a reactive group such as an epoxy group. The weight-average molecular weight (standard polystyrene equivalent value measured by GPC method) of the high-molecular-weight resin component may be 100,000 to 3,000,000. The content of the high-molecular-weight resin component may be 30 to 80 parts by mass relative to 100 parts by mass of the total amount of the die bonding film.

[0022] The thermosetting adhesive may contain other components as needed, such as a curing accelerator that accelerates the reaction between the epoxy resin and the phenolic resin, a coupling agent (e.g., a silane coupling agent), and an inorganic filler (e.g., silica).

[0023] The dicing film 5 has a base film 3 and a pressure-sensitive adhesive layer 2 provided on the base film 3. The base film 3 has, for example, a rectangular main surface. The pressure-sensitive adhesive layer 2 has a main surface 2a in contact with the base film 3 and a main surface 2b in contact with the die bonding film 1. The main surfaces 2a and 2b of the pressure-sensitive adhesive layer 2 may be circular surfaces of a size that covers the entire main surface of the die bonding film 1.

[0024] The tensile stress of the dicing film 5 when stretched 20% at 0°C in a tensile test is 15 MPa or more. If the tensile stress is 15 MPa or more, the cooling separation property of the die bonding film can be improved, particularly in the central part of the semiconductor wafer. The tensile stress may be 16 MPa or more or 17 MPa or more. The upper limit of the tensile stress is not particularly limited, but may be, for example, 30 MPa or less or 25 MPa or less.

[0025] In this specification, the tensile stress at 20% stretching at 0°C in a tensile test of a dicing film refers to a value measured in accordance with JIS K 7161-1:2014. More specifically, a tensile test is carried out using a tensile tester (for example, Tensilon (RTF-1250-HS-PL, manufactured by A&D Manufacturing Co., Ltd.)) and the following sample under the measurement conditions to obtain an S-S curve (stress-strain curve). From the obtained S-S curve, the stress value in the MD direction (machine direction) of the base film at an elongation rate of 20% is read, and this can be used as the tensile stress value. (Measurement conditions) Sample: Dumbbell-shaped No. 1 test piece Chuck distance: 40 mm Temperature condition: 0°C ± 2°C Tensile speed: 300 mm / min

[0026] The tensile stress can be increased by using, for example, an ethylene copolymer, an ionomer resin, etc. as the main component of the substrate film. The tensile stress can also be increased by mixing an inorganic filler, etc., into the substrate film.

[0027] The thermal shrinkage rate of the dicing film 5 at 70°C as determined by thermomechanical analysis (TMA) is 5% or less. A thermal shrinkage rate of 5% or less prevents excessive widening of the kerf width between semiconductor chips after the die bonding film of the integrated dicing and die bonding film is attached to multiple semiconductor chips under heated conditions, thereby improving the cooling separation properties of the die bonding film, particularly at the edge of the semiconductor wafer. The thermal shrinkage rate may be 4.5% or less or 4% or less. The lower limit of the thermal shrinkage rate is not particularly limited, but may be, for example, 1% or more or 2% or more.

[0028] The maximum heat shrinkage of the dicing film 5 between 80 and 140°C as determined by thermomechanical analysis (TMA) may be 10% or more. If the maximum heat shrinkage is 10% or more, the kerf width after heat shrinkage of the dicing film can be more satisfactorily secured. The maximum heat shrinkage may be 11% or more, 12% or more, or 13% or more, or may be 40% or less, 35% or less, or 30% or less.

[0029] In this specification, the thermal shrinkage rate at 70°C and the maximum thermal shrinkage rate between 80 and 140°C measured by thermomechanical analysis (TMA) of a dicing film can be determined, for example, by the following method. First, a measurement sample having a length of 25 mm and a width of 4 mm is cut out from the dicing film. The cutting direction is such that the MD direction of the dicing film is 25 mm long and the TD direction (transverse direction, the direction perpendicular to the MD direction (vertical direction)) is 4 mm wide. Next, the measurement sample is subjected to measurement of the amount of thermal shrinkage in the MD direction of the dicing film using a thermomechanical analyzer (e.g., TMA7100, manufactured by Hitachi High-Tech Corporation) under the following measurement conditions. The value of the amount of thermal shrinkage at 70°C and the maximum amount of thermal shrinkage between 80 and 140°C are read, and the respective thermal shrinkage rates can be determined by dividing the values ​​by the initial length of the measurement sample measured with the thermomechanical analyzer. (Measurement conditions) Distance between chucks: 10 mm (width 4 mm) Load: 0 mN Temperature range: 30 to 180°C Heating rate: 5°C / min

[0030] The heat shrinkage rate at 70°C can be reduced by using, for example, polyethylene, polypropylene, or the like as a component of the base film. The heat shrinkage rate can also be reduced by mixing a polyamide resin or the like into the base film. Furthermore, the heat shrinkage rate can also be reduced by lowering the winding tension during the production of the base film.

[0031] The maximum heat shrinkage between 80 and 140°C can be increased by using, for example, an ethylene copolymer, an ionomer resin, etc. as the main component of the base film. The maximum heat shrinkage can also be increased by increasing the winding tension during the production of the base film.

[0032] The adhesive layer 2 may be a layer formed of an adhesive commonly used in dicing films. The adhesive constituting the adhesive layer 2 may be an ultraviolet-curable adhesive or a non-ultraviolet-curable adhesive. An ultraviolet-curable adhesive is an adhesive whose adhesiveness decreases when irradiated with ultraviolet light. By using an ultraviolet-curable adhesive, for example, the adhesive strength of the adhesive layer 2 can be decreased by ultraviolet light irradiation before picking up the semiconductor chip to which the die-bonding film piece is attached.

[0033] The ultraviolet-curable adhesive may contain, for example, an acrylic resin having a (meth)acryloyl group. The acrylic resin may contain, for example, a hydroxyl group. The acrylic resin is a polymer containing a (meth)acrylic acid ester as a monomer unit. The ultraviolet-curable adhesive may further contain other components such as a photopolymerization initiator and a crosslinking agent (for example, a polyisocyanate compound) as necessary. The crosslinking agent is a compound having a reactive group that reacts with the acrylic resin. Examples of the crosslinking agent include polyisocyanate compounds.

[0034] The thickness of the pressure-sensitive adhesive layer 2 may be, for example, 20 μm or less. The thickness of the pressure-sensitive adhesive layer 2 may be, for example, 18 μm or less, 16 μm or less, 14 μm or less, 12 μm or less, or 10 μm or less, or may be 1 μm or more, 2 μm or more, 3 μm or more, 4 μm or more, or 5 μm or more.

[0035] The tensile stress and the heat shrinkage rate of the dicing film 5 tend to depend mainly on the base film 3. Therefore, in a method for manufacturing a semiconductor device comprising a step of attaching the die bonding film of a dicing and die bonding integrated film to a plurality of semiconductor chips under heating conditions and a step of expanding the dicing film under cooling conditions to singulate the die bonding film and produce semiconductor chips with die bonding film pieces, the base film 3 can be appropriately selected from base films that constitute commonly used dicing and die bonding integrated films and whose tensile stress and heat shrinkage rate fall within predetermined ranges.

[0036] Resins constituting the base film 3 include homopolymers of olefins such as ethylene, propylene, butene, hexene, methylpentene, 4-methyl-1-pentene, and vinyl acetate (vinyl acetate), and copolymers thereof; polyesters such as polyethylene terephthalate and polyethylene naphthalate; ethylene copolymers such as ethylene-vinyl acetate copolymer, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylic acid ester copolymer, and ethylene-(meth)acrylic acid-(meth)acrylic acid ester copolymer; and copolymers containing an olefin such as ethylene and (meth)acrylic acid. Examples of the base film include ionomer resins having an ionic crosslinking structure formed by salt formation between an acid moiety and a metal ion (sodium ion, zinc ion, etc.); engineering plastics such as polycarbonate, polyamide, polyimide, polyether ether ketone, polyetherimide, wholly aromatic polyamide, and polyphenyl sulfide; aramid (paper); glass; glass cloth; fluorine-based resins; chlorine-based resins such as polyvinyl chloride and polyvinylidene chloride; cellulose-based resins; silicone-based resins; or mixtures of these with plasticizers, or cured products crosslinked by electron beam irradiation. The base film may be composed of a single resin, or a mixed resin containing two or more resins. The base film may also be a film having a laminate structure in which two or more films are laminated. In order to control the adhesion to the pressure-sensitive adhesive layer 2, the surface of the base film may be subjected to a surface roughening treatment such as a matte treatment or a corona treatment.

[0037] The base film 3 may be a base film containing at least one resin selected from the group consisting of polyester, ethylene copolymer, ionomer resin, and engineering plastic. By using such a base film as the base film 3 of the die bonding film 1, the tensile stress and the thermal shrinkage rate of the dicing film 5 tend to be easily adjusted to a predetermined range. In one embodiment, the base film 3 may be a base film made of a mixed resin containing an ionomer resin and a polyamide resin. The mass ratio of the ionomer resin to the polyamide resin (ionomer resin / polyamide resin) may be 50 / 50 to 95 / 5.

[0038] The substrate film 3 can be produced by film formation using a conventionally known method. For example, the resin composition obtained by melt-kneading the resin raw material of the substrate with additives such as an antistatic agent, if necessary, can be processed into a film using various molding methods such as T-die casting, T-die nip molding, inflation molding, extrusion lamination, and calendar molding. Furthermore, when the substrate film has a laminate structure, each layer can be separately formed by means of calendar molding, extrusion, inflation molding, etc., and then laminated by means of thermal lamination or adhesive bonding to produce a laminate structure. The adhesive can be an adhesive commonly used in producing a laminate structure. Alternatively, the resin compositions of each layer can be simultaneously extruded using a coextrusion lamination method to produce a laminate structure. Furthermore, the surface of the substrate film opposite to the surface that contacts the pressure-sensitive adhesive layer may be embossed with a shiborol or the like to stabilize the winding during production of the substrate film 3 and prevent blocking after film formation.

[0039] The thickness of the base film 3 may be, for example, 20 to 200 μm. When the thickness of the base film 3 is 20 μm or more, sufficient process resistance can be ensured, and when the thickness of the base film 3 is 200 μm or less, it is economically advantageous. The thickness of the base film 3 may be 25 μm or more or 30 μm or more, or may be 150 μm or less or 100 μm or less.

[0040] The shape of the base film 3 may have a rectangular main surface, but is not limited thereto. The base film 3 may be a long film, and for example, a plurality of pressure-sensitive adhesive layers 2 may be disposed on a single long base film 3.

[0041] The dicing / die bonding integrated film of the present disclosure can be suitably used in a method for manufacturing a semiconductor device, which includes a step of attaching the die bonding film of the dicing / die bonding integrated film to multiple semiconductor chips under heated conditions, and a step of expanding the dicing film under cooled conditions to individualize the die bonding film and produce semiconductor chips with die bonding film pieces.

[0042] 2 and 3 are cross-sectional views schematically illustrating a method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device shown in FIGS. 2 and 3 includes: (A) a step of attaching the die bonding film 1 of a dicing / die bonding integrated film 10, which includes a base film 3 and a dicing film 5 having an adhesive layer 2 provided on the base film 3, and a die bonding film 1 provided on the adhesive layer 2, to a plurality of semiconductor chips C obtained by dividing a semiconductor wafer, under heating conditions; and (B) a step of expanding the dicing film 5 under cooling conditions to divide the die bonding film 1, thereby producing a semiconductor chip 30 with a die bonding film piece, which includes the semiconductor chip C and die bonding film pieces 1a obtained by dividing the die bonding film 1. The method for manufacturing a semiconductor device may further include a step of (C) picking up the semiconductor chip 30 with the die bonding film piece from the adhesive layer 2, and (D) mounting the picked-up semiconductor chip 30 with the die bonding film piece on a substrate or another semiconductor chip.

[0043] The semiconductor chips C are formed by dividing a semiconductor wafer. The semiconductor wafer may be a silicon wafer, and the semiconductor chips C may be silicon chips. The semiconductor chips C have a main surface F1 and a main surface F2. For example, the main surface F1 may be a circuit surface (front surface) and the main surface F2 may be a back surface opposite the circuit surface.

[0044] The thickness of the semiconductor wafer may be, for example, 50 to 3000 μm, 100 to 2000 μm, or 200 to 1500 μm.

[0045] The method for dicing the semiconductor wafer may be a stealth dicing method such as the SDBG (Stealth Dicing Before Grinding) method, or a half-cut dicing method such as the DBG (Dicing Before Grinding) method.

[0046] The stealth dicing method may be a method including, for example, a step of attaching a protective tape (backgrind tape) to the circuit surface of a semiconductor wafer, a step of forming a modified region inside the semiconductor wafer by irradiating it with laser light, and a step of grinding the semiconductor wafer from the back side and splitting the semiconductor wafer using the modified region as the splitting starting point.

[0047] The half-cut dicing method may be a method including, for example, a step of forming a groove on the surface of a semiconductor wafer with a dicing blade, a step of attaching a protective tape (back-grinding tape) to the circuit surface of the semiconductor wafer, and a step of grinding the semiconductor wafer from the back side down to the groove.

[0048] By using such a method for dicing a semiconductor wafer, a laminate 20 can be obtained (see FIG. 2( a)) that includes a protective tape 7 (backgrind tape) and a plurality of semiconductor chips C provided on the protective tape 7. In the laminate 20, the semiconductor chips C are provided on the protective tape 7 at intervals of the kerf width kw1.

[0049] The thickness of the semiconductor chip C is smaller than that of the semiconductor wafer, and may be, for example, 10 to 200 μm. The thickness of the semiconductor chip C may be 15 μm or more, or 20 μm or more, or may be 150 μm or less, 100 μm or less, or 50 μm or less.

[0050] Next, the die bonding film 1 of the dicing and die bonding integrated film 10 is attached to the semiconductor chip C under heating conditions, with the die bonding film 1 in contact with the main surface F2 of the semiconductor chip C (see FIG. 2(a)). The temperature of the heating conditions may be, for example, 60 to 80°C. Furthermore, a dicing ring DR is attached to the main surface 2b of the pressure-sensitive adhesive layer 2 on the die bonding film 1 side so as to surround the multiple semiconductor chips C (see FIG. 2(b)). The protective tape 7 is peeled off from the semiconductor chip C at an appropriate time.

[0051] In this manner, a laminate 40 can be obtained that includes a dicing / die bonding integrated film 10 and a plurality of semiconductor chips C provided on the die bonding film 1 of the dicing / die bonding integrated film 10. The laminate 40 may include a dicing ring DR on the main surface 2b of the pressure-sensitive adhesive layer 2 that faces the die bonding film 1. In the laminate 40, the semiconductor chips C are provided on the die bonding film 1 at intervals of the kerf width kw2. The kerf width kw2 usually tends to be wider than the kerf width kw1, but if the kerf width kw2 is too wider than the kerf width kw1, the cooling separation ability of the die bonding film 1, which is extremely thin (for example, 20 μm or less), tends to decrease.

[0052] Next, under cooling conditions, the region of the dicing film 5 inside the dicing ring DR is pushed up by the ring Ra, thereby expanding (stretching) the dicing film 5 (see FIG. 2(c)). The temperature of the cooling conditions may be, for example, −15 to 0° C. By expanding the dicing film 5, the die bonding film 1 is cut. By this cutting, a semiconductor chip 30 with a die bonding film piece is formed on the pressure-sensitive adhesive layer 2, the semiconductor chip C and die bonding film pieces 1a obtained by cutting the die bonding film 1.

[0053] After the ring Ra is lowered, the area of ​​the dicing film 5 between the dicing ring DR and the semiconductor chips 30 with die bonding film pieces is heated by a heater H (see FIG. 3(a)). Due to thermal contraction of the dicing film 5 in the heated area, the kerf width between the semiconductor chips 30 with die bonding film pieces tends to further widen.

[0054] When the adhesive layer 2 is a layer formed of an ultraviolet-curable adhesive, ultraviolet irradiation can reduce the adhesive strength of the adhesive layer 2. After the adhesive strength of the adhesive layer 2 has been reduced, the individual semiconductor chips 30 with die-bonding film pieces that have been pushed up by the push-up jig 42 are picked up by a suction collet 44 (see FIG. 3(b)).

[0055] The picked-up semiconductor chip 30 with the die bonding film piece attached is mounted on a substrate or another semiconductor chip. By stacking multiple semiconductor chips, for example, a 3D NAND flash memory can be manufactured.

[0056] The present disclosure will be described in more detail below based on examples, but the present disclosure is not limited to these examples. Unless otherwise specified, all chemicals used were reagents (commercially available products).

[0057] Example 1 1. Synthesis of Acrylic Resin (Production Example 1-1) 2-ethylhexyl acrylate (EHA), 2-hydroxyethyl acrylate (HEA), and methyl methacrylate (MMA) were prepared as monomers constituting the monomer units. These monomers were mixed to a copolymerization ratio of EHA / HEA / MMA = 78 parts by mass / 21 parts by mass / 1 part by mass, and an acrylic resin was obtained by solution radical polymerization using ethyl acetate as a solvent and 0.08 parts by mass of azobisisobutyronitrile (AIBN) as an initiator.

[0058] Next, 0.05 parts by mass of hydroquinone monomethyl ether was used as a polymerization inhibitor, and 16 parts by mass of 2-methacryloyloxyethyl isocyanate (trade name: Karenz MOI, manufactured by Resonac Corporation, molecular weight: 155.2) was reacted with the resulting acrylic resin to obtain an ultraviolet-reactive acrylic resin having a carbon-carbon double bond (acrylic resin of Production Example 1-1). The acrylic resin of Production Example 1-1 may be an acrylic resin having a (meth)acryloyl group and a hydroxyl group. The weight-average molecular weight (standard polystyrene equivalent) of the acrylic resin of Production Example 1-1 was measured by GPC. SD-8022 / DP-8020 / RI-8020 manufactured by Tosoh Corporation were used for the GPC measurement. Gelpack GL-A150-S / GL-A160-S manufactured by Resonac Corporation were used as columns. Tetrahydrofuran was used as the eluent. The weight average molecular weight of the acrylic resin of Production Example 1-1 was 350,000. The hydroxyl value and acid value of the acrylic resin of Production Example 1-1, measured in accordance with the method described in JIS K 0070:1992, were 37.6 mgKOH / g and 6.5 mgKOH / g, respectively.

[0059] 2. Synthesis of UV-curable adhesive (Production Example 2-1) For 100 parts by mass of the acrylic resin of Production Example 1-1 in terms of solid content, 2.0 parts by mass of an α-hydroxyalkylphenone-based photopolymerization initiator (trade name: Omnirad 184, manufactured by IGM Resins B.V.), 0.4 parts by mass of an acylphosphine oxide-based photopolymerization initiator (trade name: Omnirad 819, manufactured by IGM Resins B.V.), and 4.1 parts by mass of a TDI (toluene diisocyanate) polyisocyanate crosslinking agent (trade name: Coronate L-45E, manufactured by Tosoh Corporation) as a crosslinking agent were blended in a ratio of 100 parts by mass in terms of solid content, diluted with ethyl acetate, and stirred to prepare a solution of the UV-curable adhesive of Production Example 2-1.

[0060] 3. Preparation of base film An ionomer resin (Zn) having a mass ratio of ethylene / methacrylic acid / 2-methyl-propyl acrylate = 80 / 10 / 10 was used. ２＋ Degree of neutralization by ions: 60 mol%, melting point: 86 ° C, MFR (melt mass flow rate): 1 g / 10 min (190 ° C / 2.16 kg load), density: 0.96 g / cm ３ ) and polyamide resin (nylon 6, melting point: 225°C, density: 1.13g / cm ３ ) was added so that the mass ratio of ionomer resin / polyamide resin was 90 / 10, and the thickness was adjusted to 70 μm using an extruder to obtain a substrate film.

[0061] 4. Preparation of dicing film A solution of the ultraviolet-curable adhesive of Production Example 2-1 was applied to a polyethylene terephthalate film (thickness: 38 μm) with a release treatment on one side so that the thickness after drying was 10 μm, and then dried at 80 ° C for 3 minutes to prepare an adhesive layer on the polyethylene terephthalate film. Then, the substrate film prepared above with one side subjected to corona discharge treatment was bonded to the adhesive layer. The bonded laminate was subjected to aging treatment in a thermostatic chamber at 23 ° C for 96 hours to obtain a dicing film having a substrate film and an adhesive layer provided on the substrate film.

[0062] 5. Preparation of Die Bonding Film A mixture containing the following components and cyclohexanone was stirred and then kneaded for 90 minutes using a bead mill. Epoxy resin (trade name: N500P-10, DIC Corporation, cresol novolac epoxy resin, epoxy equivalent: 200, molecular weight: 980, softening point: 85°C): 55 parts by mass; Phenolic resin (trade name: MEH-7800M, Meiwa Kasei Co., Ltd. (UBE Corporation), hydroxyl equivalent: 175): 45 parts by mass; Silane coupling agent A (trade name: NUC A-189, Nippon Unicar Co., Ltd. (ENEOS NUC Corporation), γ-mercaptopropyltrimethoxysilane): 1.7 parts by mass; Silane coupling agent B (trade name: NUCA-1160, Nippon Unicar Co., Ltd. (ENEOS NUC Corporation), γ-ureidopropyltriethoxysilane): 0.2 parts by mass. Filler (product name: Aerosil R972, manufactured by Nippon Aerosil Co., Ltd., silica, average particle size 0.016 μm): 32 parts by mass. Note that "Aerosil R972" is silica particles having organic groups (for example, methyl groups) on the surface.

[0063] The following components were added to the kneaded mixture, and the mixture was further stirred. The mixture was then degassed under vacuum to obtain a varnish for forming a die bonding film. - Acrylic rubber having an epoxy group (trade name: HTR-860P-3, manufactured by Nagase ChemteX Corporation, glycidyl acrylate or glycidyl methacrylate content: 3% by mass, weight average molecular weight: 800,000): 280 parts by mass - Curing accelerator (trade name: Curesol 2PZ-CN, "Curesol" is a registered trademark, manufactured by Shikoku Chemicals Corporation, 1-cyanoethyl-2-phenylimidazole): 0.5 parts by mass

[0064] A polyethylene terephthalate film (thickness: 38 μm) with a release surface was prepared as a carrier film. A varnish for forming a die bonding film was applied to the release surface of the carrier film, and the coating was dried by heating at 140 ° C for 5 minutes. This resulted in a laminated film having a carrier film and a B-stage die bonding film (adhesive layer with a thickness of 10 μm) formed thereon.

[0065] 6. Preparation of a Dicing and Die Bonding Integrated Film A laminate film having a die bonding film was cut into a circle (diameter: 312 mm). A dicing film from which the polyethylene terephthalate film had been peeled was attached to the circular die bonding film with the adhesive layer facing the die bonding film to obtain a laminate. The resulting laminate was left at room temperature (25°C) for one day. The dicing film was then cut outside the portion attached to the die bonding film to obtain a dicing and die bonding integrated film of Example 1, which included a circular die bonding film and a circular dicing film (diameter: 370 mm) covering the die bonding film and having a portion protruding from the die bonding film. Using the same procedure, multiple dicing and die bonding integrated films of Example 1 were prepared for use in the various evaluation tests described below.

[0066] Example 2 A plurality of dicing and die bonding integrated films of Example 2 were produced in the same manner as in Example 1, except that the thickness of the base film was changed from 70 μm to 80 μm.

[0067] Example 3 A plurality of dicing and die bonding integrated films of Example 3 were produced in the same manner as in Example 1, except that the following substrate film was used as the substrate film.

[0068] Ionomer resin (Zn) with a mass ratio of ethylene / methacrylic acid / 2-methyl-propyl acrylate=80 / 10 / 10 ２＋ Degree of neutralization by ions: 60 mol%, melting point: 86 ° C, MFR (melt mass flow rate): 1 g / 10 min (190 ° C / 2.16 kg load), density: 0.96 g / cm ３ ) and polyamide resin (nylon 6, melting point: 225°C, density: 1.13g / cm ３) was added to the mixed resin A so that the mass ratio was ionomer resin / polyamide resin = 90 / 10, thereby obtaining mixed resin A. Subsequently, 30 parts by mass or less of an antistatic agent was added to the mixed resin A, assuming the total amount of mixed resin A to be 100 parts by mass, thereby obtaining mixed resin B. The thickness ratio of the layer made of mixed resin A / the layer made of mixed resin B was adjusted to 65 / 15 using an extruder, and the total thickness of the layer made of mixed resin A and the layer made of mixed resin B was 80 μm, thereby obtaining a substrate film. The pressure-sensitive adhesive layer was formed on the layer made of mixed resin A of the substrate film.

[0069] Example 4 A plurality of integrated dicing and die bonding films of Example 4 were produced using the same procedure as Example 1, except for the following changes: (1) The acrylic resin of Production Example 1-1 was changed to the acrylic resin of Production Example 1-2 having the composition shown in Table 1. The acrylic resin of Production Example 1-2 was synthesized using the same procedure as the acrylic resin of Production Example 1-1, except for the change in composition shown in Table 1. (2) The ultraviolet-curable adhesive of Production Example 2-1 was changed to the ultraviolet-curable adhesive of Production Example 2-2 having the composition shown in Table 2. The ultraviolet-curable adhesive of Production Example 2-2 was synthesized using the same procedure as the ultraviolet-curable adhesive of Production Example 2-1, except for the change in composition shown in Table 2. (3) The thickness of the adhesive layer was changed from 10 μm to 8 μm. (4) The substrate film having a mass ratio of ionomer resin / polyamide resin = 90 / 10 was changed to a substrate film having a mass ratio of ionomer resin / polyamide resin = 80 / 20.

[0070] Example 5 A plurality of dicing and die bonding integrated films of Example 5 were produced in the same manner as in Example 4, except that the thickness of the base film was changed from 70 μm to 80 μm.

[0071] Example 6 A plurality of dicing and die bonding integrated films of Example 6 were produced in the same manner as in Example 4, except that the thickness of the base film was changed from 70 μm to 90 μm.

[0072] Comparative Example 1 A plurality of dicing and die bonding integrated films of Comparative Example 1 were produced in the same manner as in Example 1, except that the thickness of the base film was changed from 70 μm to 90 μm.

[0073] Comparative Example 2 A plurality of dicing and die bonding integrated films of Comparative Example 2 were produced by the same procedure as in Comparative Example 1, except that the base material film having a mass ratio of ionomer resin / polyamide resin = 90 / 10 was changed to a base material film having a mass ratio of ionomer resin / polyamide resin = 100 / 0, i.e., made of ionomer resin.

[0074] Comparative Example 3 A plurality of dicing and die bonding integrated films of Comparative Example 3 were produced using the same procedure as Comparative Example 2, except for the following changes: (1) The acrylic resin of Production Example 1-1 was changed to the acrylic resin of Production Example 1-2, which had the composition shown in Table 1. (2) The ultraviolet-curable adhesive of Production Example 2-1 was changed to the ultraviolet-curable adhesive of Production Example 2-2, which had the composition shown in Table 2. (3) The thickness of the adhesive layer was changed from 10 μm to 8 μm.

[0075] Comparative Example 4 A plurality of dicing and die bonding integrated films of Comparative Example 4 were produced using the same procedure as in Example 1, except for the following changes: (1) The acrylic resin of Production Example 1-1 was changed to the acrylic resin of Production Example 1-3 having the composition shown in Table 1. The acrylic resin of Production Example 1-3 was synthesized using the same procedure as the acrylic resin of Production Example 1-1, except for the change to the composition shown in Table 1. (2) The ultraviolet-curable adhesive of Production Example 2-1 was changed to the ultraviolet-curable adhesive of Production Example 2-3 having the composition shown in Table 2. The ultraviolet-curable adhesive of Production Example 2-3 was synthesized using the same procedure as the ultraviolet-curable adhesive of Production Example 2-1, except for the change to the composition shown in Table 2. (3) A base film having a mass ratio of ionomer resin / polyamide resin of 90 / 10 and a thickness of 70 μm was changed to a multilayer base film obtained by adjusting the thickness ratio of ethylene-methacrylic acid copolymer / vinyl acetate polymer / ethylene-methacrylic acid copolymer of 1 / 8 / 1 and the thickness of 80 μm using an extruder.

[0076] Comparative Example 5 A plurality of dicing and die bonding integrated films of Comparative Example 5 were produced by the same procedure as in Comparative Example 4, except that the base film having a thickness ratio of ethylene-methacrylic acid copolymer / vinyl acetate polymer / ethylene-methacrylic acid copolymer = 1 / 8 / 1 was changed to a multilayer base film obtained by adjusting the thickness ratio of polypropylene / vinyl acetate polymer / polypropylene = 1 / 8 / 1 and the thickness to 100 μm using an extruder.

[0077]

[0078]

[0079] Evaluation (1) Characteristic Evaluation of Dicing Film (1-1) Measurement of Tensile Stress at 20% Stretching at 0°C by Tensile Test For each dicing film of the integrated dicing and die bonding films of Examples 1 to 6 and Comparative Examples 1 to 5, a tensile test was carried out in accordance with JIS K 7161-1:2014 using a Tensilon (RTF-1250-HS-PL, manufactured by A&D Manufacturing Co., Ltd.) under the following measurement conditions, to obtain an S-S curve (stress-strain curve). From the obtained S-S curve, the stress value in the MD direction (machine direction) of the base film (base film) at an elongation rate of 20% was read and used as the tensile stress value. The results are shown in Tables 3 and 4. (Measurement Conditions) Sample: Dumbbell-shaped No. 1 test piece Chuck distance: 40 mm Temperature condition: 0°C ± 2°C Tensile speed: 300 mm / min

[0080] (1-2) Measurement of Thermal Shrinkage at 70°C and Maximum Thermal Shrinkage Between 80 and 140°C by Thermomechanical Analysis Measurement samples measuring 25 mm in length and 4 mm in width were cut out from each dicing film of the integrated dicing and die bonding films of Examples 1 to 6 and Comparative Examples 1 to 5. The cutting direction was such that the MD (machine direction) of the dicing film was 25 mm long and the TD (vertical direction) was 4 mm wide. Next, the thermal shrinkage of the measurement samples in the MD direction of the dicing film was measured using a thermomechanical analyzer (TMA7100, manufactured by Hitachi High-Tech Corporation) under the following measurement conditions. The thermal shrinkage values ​​at 70°C and the maximum thermal shrinkage between 80 and 140°C were read and divided by the initial length of the measurement sample measured with the thermomechanical analyzer to determine the respective thermal shrinkage rates. The results are shown in Tables 3 and 4. (Measurement conditions) Distance between chucks: 10 mm (width 4 mm) Load: 0 mN Temperature range: 30 to 180°C Heating rate: 5°C / min

[0081] (2) Evaluation of Processability (2-1) Preparation of Sample for Processability Evaluation Samples for processability evaluation were prepared according to the following procedure. Protective tape was attached to the surface of a silicon wafer (diameter: 12 inches, thickness: 775 μm). The silicon wafer was then singulated by stealth dicing. That is, modified regions were formed inside the silicon wafer by irradiating the surface of the silicon wafer opposite to the side where the protective tape was attached (back surface) with laser light under the following conditions. (Stealth dicing conditions) Stealth dicing device: DFL7361 (manufactured by Disco Corporation) Laser oscillator type: semiconductor laser excited Q-switched solid state laser Wavelength: 1342 nm Frequency: 60 kHz Output: 0.8 W Number of passes: 2 Chip size: 3 mm × 12 mm Dicing speed: 800 mm / sec

[0082] Next, the surface of the silicon wafer opposite the protective tape was ground (polished) using a grinder polisher (DGP8761, manufactured by Disco Corporation) until the thickness of the silicon wafer was 30 μm, and the silicon wafer was singulated to obtain silicon chips. The die bonding films of the dicing / die bonding integrated films of Examples 1 to 6 and Comparative Examples 1 to 5 were attached to the surface of the silicon chip opposite the protective tape under the following attachment conditions. At this time, the attachment direction was adjusted so that the direction of the parting line of the silicon chip was aligned with the MD and TD directions of the base film of the dicing / die bonding integrated film. Furthermore, the adhesive layer protruding from the die bonding film was attached to a dicing ring, and then the protective tape was peeled off from the silicon wafer. (Attachment Conditions) Attachment device: DFM2800 (manufactured by Disco Corporation) Attachment temperature: 65°C Attachment speed: 10 mm / s Attachment tension level: Level 7

[0083] Next, using a die separator (DDS2300, manufactured by Disco Corporation), the dicing film of the integrated dicing and die bonding film was stretched by cooling and expanding under the following cooling and expanding conditions, thereby dividing the die bonding film. The dicing film was then shrunk by heating (heat shrinking) under the following heating conditions. (Cooling and expanding conditions) Cooling temperature: 0°C Cooling time: 120 seconds Push-up amount: 8 mm Push-up speed: 120 mm / sec Holding time after push-up: 10 seconds (Heating conditions) Heater temperature: 250°C Heater rotation speed: 10° / sec Push-up amount: 8 mm Tape cooling waiting time: 10 seconds

[0084] After the dicing film was shrunk, the adhesive layer was irradiated with ultraviolet light under the following conditions, thereby reducing the adhesive strength of the adhesive layer: (UV light irradiation conditions) UV illuminance: 100 mW / cm ２ UV irradiation dose: 150 mJ / cm ２

[0085] (2-2) Evaluation (a) Measurement of Kerf Width After Bonding In "(2-1) Preparation of Samples for Processability Evaluation," the kerf width (width of the lattice-like gap) formed between adjacent chips was measured by microscopic observation for samples after bonding the integrated dicing and die bonding film to a silicon chip. FIG. 5 is a top view showing measurement points for measuring the kerf width after bonding in the example, with FIG. 5(a) being a top view showing measurement points at the edge of the semiconductor wafer and FIG. 5(b) being a top view showing measurement points at the center of the semiconductor wafer. For the kerf width at the edge of the semiconductor wafer, the kerf width in the MD direction was measured at 12 points indicated by black circles in FIG. 5(a), and the average value was calculated from the data at the 12 points. For the kerf width at the center of the semiconductor wafer, the kerf width in the MD direction was measured at five points indicated by black circles in FIG. 5(b), and the average value was calculated from the data at the five points. The results are shown in Tables 3 and 4.

[0086] (b) Evaluation of Separability In "(2-1) Preparation of Samples for Processability Evaluation," for samples after dividing the die bonding film by cooling and expanding, the separability was evaluated according to the following criteria based on the number of locations where the die bonding film was not separated. In the evaluation of separability, the edge of the semiconductor wafer was defined as the region from each end of the semiconductor wafer in the MD direction to the fifth dicing line, and the center of the semiconductor wafer was defined as the region other than the edge of the semiconductor wafer (see FIG. 4), and the number of locations where the die bonding film was not separated in each region was determined. The results are shown in Tables 3 and 4. A: 0 B: 1 or more and less than 5 C: 5 or more and less than 10 D: 10 or more

[0087] (c) Measurement of Kerf Width After Heat Shrinkage In "(2-1) Preparation of Samples for Processability Evaluation," the kerf width (width of the lattice-like gaps) formed between adjacent chips was measured by microscope observation for the samples after the dicing film was shrunk by heating. Figure 6 is a top view showing the measurement points for measuring the kerf width after heat shrinkage in the example. Regarding the kerf width of the semiconductor wafer, the kerf width in the MD direction and the kerf width in the TD direction were measured at nine points indicated by black circles in Figure 6, and the average value was calculated from the data at 18 points. The kerf width was evaluated based on the following criteria to determine whether it was well maintained. The results are shown in Tables 3 and 4. A: 30 μm or more B: 20 ​​μm or more but less than 30 μm C: Less than 20 μm

[0088]

[0089]

[0090] As shown in Tables 3 and 4, the dicing and die bonding integrated films of Comparative Examples 1 to 3, in which the thermal shrinkage rate of the dicing film exceeded 5% at 70°C, showed insufficient die bonding film severability at the edge of the silicon wafer. Furthermore, the dicing and die bonding integrated films of Comparative Examples 4 and 5, in which the tensile stress of the dicing film was less than 15 MPa at 0°C, showed insufficient die bonding film severability at the center of the silicon wafer. In contrast, the dicing and die bonding integrated films of Examples 1 to 6, in which the thermal shrinkage rate of the dicing film was 5% or less at 70°C and the tensile stress of the dicing film was 15 MPa or more at 0°C, were found to have improved die bonding film severability. Furthermore, it was also found that the dicing film's maximum thermal shrinkage rate of 10% or more between 80 and 140°C ensured a good kerf width after heat shrinkage of the dicing film.

[0091] From the above, it has been confirmed that, according to the present disclosure, in a specified method for manufacturing a semiconductor device, it is possible to improve the cooling separation property of a die bonding film having a thickness of 20 μm or less.

[0092] 1... die bonding film, 1a... die bonding film piece, 2... adhesive layer, 3... base film, 5... dicing film, 7... protective tape, 10... dicing and die bonding integrated film, 30... semiconductor chip with die bonding film piece, C... semiconductor chip.

Claims

1. A method for manufacturing a semiconductor device comprising: (A) a step of attaching, under heating conditions, the die bonding film of a dicing / die bonding integrated film comprising a base film and a dicing film having an adhesive layer provided on the base film, and a die bonding film provided on the adhesive layer, to a plurality of semiconductor chips obtained by dicing a semiconductor wafer; and (B) a step of expanding the dicing film under cooling conditions, thereby dicing the die bonding film, thereby producing a semiconductor chip with a die bonding film piece, the semiconductor chip and the die bonding film piece obtained by dicing the die bonding film; wherein the thickness of the die bonding film is 20 μm or less, the tensile stress of the dicing film at 20% stretching at 0°C in a tensile test is 15 MPa or more, and the thermal shrinkage rate at 70°C in a thermomechanical analysis is 5% or less.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the dicing film has a maximum thermal shrinkage of 10% or more between 80 and 140°C as determined by thermomechanical analysis.

3. The method for manufacturing a semiconductor device according to claim 1 or 2, wherein in (A), the method for dividing the semiconductor wafer into individual pieces is a stealth dicing method or a half-cut dicing method.

4. A dicing and die bonding integrated film comprising: a dicing film having a base film and an adhesive layer provided on the base film; and a die bonding film provided on the adhesive layer, wherein the thickness of the die bonding film is 20 μm or less, the tensile stress of the dicing film at 20% stretching at 0°C in a tensile test is 15 MPa or more, and the thermal shrinkage rate at 70°C in a thermomechanical analysis is 5% or less.

5. The dicing and die bonding integrated film according to claim 4, wherein the dicing film has a maximum thermal shrinkage rate of 10% or more between 80 and 140°C as determined by thermomechanical analysis.

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