Semiconductor device

Abstract

A semiconductor device according to one embodiment of the present invention includes a body part having: a substrate; and a chip mounted on a device surface, which is one of the outer surfaces of the substrate and faces one side in a first direction. Provided is a housing that accommodates the body part. Provided is a heat transfer pin. The housing has a lid member facing the device surface. The heat transfer pin is held by the lid member and extends from the lid member toward the chip.

Description

Semiconductor Devices

[0001] This application claims priority to Japanese Patent Application No. 2023-128907, filed on August 7, 2023, the contents of which are incorporated herein by reference.

[0002] In semiconductor devices, chips mounted on a substrate tend to generate a large amount of heat. Furthermore, when electrodes connected to wires are provided on the surface of the chip, or when the chip is covered with a resin material to ensure the chip's insulation, it is difficult to dissipate the heat from the surface side of the chip, which can lead to excessively high chip temperatures. If the chip temperature becomes too high, the operation of the semiconductor device can become unstable.

[0003] Japanese Patent Application Laid-Open No. 2021-125477

[0004] The problem to be solved by the present invention is to provide a semiconductor device that can operate stably.

[0005] The semiconductor device of the embodiment has a substrate and a main body having a chip mounted on a device surface of an outer surface of the substrate that faces one side in a first direction. The semiconductor device also has a housing that accommodates the main body. The semiconductor device also has heat transfer pins. The housing has a lid member that faces the device surface. The heat transfer pins are held by the lid member and extend from the lid member toward the chip.

[0006] 1 is a schematic cross-sectional view showing a semiconductor device according to a first embodiment; 2 is a partially enlarged schematic cross-sectional view showing a part of the semiconductor device according to the first embodiment; 3 is a schematic view of a chip according to the first embodiment as seen from above; 4 is a schematic cross-sectional view showing a semiconductor device according to a second embodiment; 5 is a schematic cross-sectional view showing a semiconductor device according to a third embodiment; and 6 is a schematic cross-sectional view showing a semiconductor device according to a fourth embodiment.

[0007] Hereinafter, a method for manufacturing a semiconductor device according to an embodiment will be described with reference to the drawings.

[0008] The first direction D1 shown in each drawing is the direction in which the device surface on which the chip is mounted faces among the outer surfaces of the substrate. In the following description, the side toward which the arrow of the first direction D1 faces (the +D1 side) will be referred to as "one side of the first direction D1" or "upper side," and the side opposite to the side toward which the arrow of the first direction D1 faces (the -D1 side) will be referred to as "the other side of the first direction D1" or "lower side." Note that the terms "upper side" and "lower side" do not indicate a relationship with the direction of gravity. In the following description, the surface facing upward among the outer surfaces of each component and layer constituting the semiconductor device will be referred to as the "front surface," and the surface facing downward will be referred to as the "back surface."

[0009] The second direction D2 shown in each drawing is a direction perpendicular to the first direction D1. The third direction D3 shown in each drawing is a direction perpendicular to both the first direction D1 and the second direction D2.

[0010] First Embodiment Fig. 1 is a schematic cross-sectional view of a semiconductor device 10 according to this embodiment. The semiconductor device 10 according to this embodiment is, for example, a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) or an IGBT (Insulated Gate Bipolar Transistor). The semiconductor device 10 includes a housing 20, a heat sink 31, a main body 32, and heat transfer pins 50. As shown in Fig. 2, the semiconductor device 10 includes an elastic member 29.

[0011] 1 , the housing 20 accommodates the main body 32 and the heat transfer fins 50 therein. The housing 20 has a peripheral wall 21 and a cover member 22.

[0012] The peripheral wall portion 21 surrounds the main body portion 32 and the heat transfer fins 50. The peripheral wall portion 21 has a cylindrical shape extending in the first direction D1. In this embodiment, the peripheral wall portion 21 has a rectangular cylindrical shape. The peripheral wall portion 21 may have other shapes, such as a cylindrical shape or a hexagonal cylindrical shape. The peripheral wall portion 21 has a first opening 21a that opens to the upper side and a second opening 21b that opens to the lower side. In this embodiment, the peripheral wall portion 21 is made of resin. The peripheral wall portion 21 may also be made of metal.

[0013] The lid member 22 has a plate shape that extends in a direction perpendicular to the first direction D1. In the present embodiment, the lid member 22 has a substantially rectangular shape when viewed from the first direction D1. The lid member 22 is fixed to the upper end of the peripheral wall portion 21. The lid member 22 closes the first opening 21a. The lid member 22 is disposed above the main body portion 32. The lid member 22 has a lid main body portion 23 and a heat dissipation portion 25.

[0014] The lid main body 23 has a plate shape that extends in a direction perpendicular to the first direction D1. In this embodiment, the lid main body 23 is made of resin. The lid main body 23 is provided with a plurality of lid holes 23a. Each lid hole 23a is a hole that penetrates the lid main body 23 in the first direction D1. Although not shown in the figure, each lid hole 23a has a substantially rectangular shape when viewed from the first direction D1.

[0015] The heat dissipation portion 25 has a generally rectangular prism shape that protrudes in the first direction D1. In this embodiment, the lid member 22 has a plurality of heat dissipation portions 25. Each heat dissipation portion 25 is disposed inside a different lid hole portion 23a. Each heat dissipation portion 25 is held on the inner surface of the lid hole portion 23a. In this embodiment, the thermal conductivity of the heat dissipation portion 25 is greater than the thermal conductivity of the lid main body portion 23. The surface of the heat dissipation portion 25 is exposed to the outside of the lid main body portion 23. In other words, a portion of the heat dissipation portion 25 is exposed to the outside of the lid main body portion 23. The heat dissipation portion 25 has a first heat dissipation portion 25a, an insulating portion 25f, a second heat dissipation portion 26, and a plurality of holding members 28.

[0016] The first heat dissipation portion 25a has a plate shape that extends in a direction perpendicular to the first direction D1. When viewed from the first direction D1, the first heat dissipation portion 25a has a substantially rectangular shape. A surface 25b of the first heat dissipation portion 25a is exposed to the outside of the lid main body 23. As a result, a portion of the heat dissipation portion 25 is exposed to the outside of the lid main body 23. The first heat dissipation portion 25a is made of a metal such as copper, aluminum, nickel, silver, or gold. In this embodiment, the first heat dissipation portion 25a is made of copper. The thermal conductivity of the first heat dissipation portion 25a is greater than that of the lid main body 23.

[0017] The insulating portion 25f insulates the first heat dissipation portion 25a from the second heat dissipation portion 26. The insulating portion 25f has a generally rectangular prism shape that protrudes in the first direction D1. The insulating portion 25f is disposed below the first heat dissipation portion 25a. The insulating portion 25f is fixed to the back surface 25c of the first heat dissipation portion 25a. The insulating portion 25f is provided with a recess 25i that is recessed upward from the back surface 25h of the insulating portion. The insulating portion 25f is made of, for example, silicon nitride (Si ３ N ４ The insulating portion 25f is made of ceramic such as silicon nitride (SiN) or aluminum nitride (AlN). In this embodiment, the insulating portion 25f is made of silicon nitride. The thermal conductivity of the insulating portion 25f is greater than the thermal conductivity of the lid main body 23.

[0018] The second heat dissipation portion 26 has a generally rectangular prism shape protruding in the first direction D1. The second heat dissipation portion 26 is disposed inside the recess 25i. The second heat dissipation portion 26 is fixed to the inner surface of the recess 25i. The second heat dissipation portion 26 is made of a metal such as copper, aluminum, nickel, silver, or gold. In this embodiment, the second heat dissipation portion 26 is made of copper. The thermal conductivity of the second heat dissipation portion 26 is greater than that of the lid main body 23. If the insulating portion 25f does not have the recess 25i, the second heat dissipation portion 26 may be fixed to the back surface 25h of the insulating portion 25f. In this case, the lid member 22 may be molded by insert molding using the heat dissipation portion 25 as an insert member. In this case, the second heat dissipation portion 26 is held by the lid main body 23. As shown in FIG. 2 , the second heat dissipation portion 26 holds a plurality of holding members 28. The second heat dissipation section 26 has a housing member 26a and a support member 26e.

[0019] The accommodating member 26a has a generally rectangular prism shape protruding in the first direction D1. The accommodating member 26a has a plurality of accommodating holes 26c recessed upward from the back surface 26b of the accommodating member 26a. When viewed from the first direction D1, each accommodating hole 26c has a circular shape. Each of the plurality of accommodating holes 26c accommodates a portion of one holding member 28 and one elastic member 29. Some of the plurality of accommodating holes 26c are arranged at intervals along the second direction D2. Although not shown, in this embodiment, other of the plurality of accommodating holes 26c are arranged at intervals along the third direction D3. The other accommodating holes 26c do not necessarily have to be arranged at intervals along the third direction D3. In this case, all of the accommodating holes 26c are arranged at intervals along the second direction D2.

[0020] The support member 26e has a plate shape that extends in a direction perpendicular to the first direction D1. The support member 26e is fixed to the back surface 26b of the accommodating member 26a. The support member 26e is provided with a plurality of through-holes 26f that penetrate the support member 26e in the first direction D1. When viewed from the first direction D1, each of the through-holes 26f is circular. The diameter of the through-holes 26f is smaller than the diameter of the accommodating holes 26c. When viewed from the first direction D1, each of the through-holes 26f overlaps with a different accommodating hole 26c. The interior of the accommodating hole 26c is connected to the interior of the peripheral wall portion 21 via the through-holes 26f.

[0021] The holding members 28 are generally cylindrical and extend in the first direction D1. Each holding member 28 detachably holds a different heat transfer pin 50. In this embodiment, the holding members 28 are made of a metal such as copper, aluminum, nickel, silver, or gold. In this embodiment, the holding members 28 are made of copper. The holding members 28 have a first portion 28a, a second portion 28b, and a third portion 28c.

[0022] The first portion 28a has a generally circular plate shape that extends in a direction perpendicular to the first direction D1. The first portion 28a is accommodated inside the accommodation hole 26c. The outer diameter of the first portion 28a is larger than the diameter of the through-hole 26f. This prevents the holding member 28 from coming off the heat dissipation portion 25. A downward elastic force is applied to the first portion 28a by the elastic member 29.

[0023] The second portion 28b has a generally cylindrical shape and protrudes downward from the first portion 28a. The second portion 28b is inserted through the through-hole 26f. The lower end of the second portion 28b is located below the support member 26e.

[0024] The third portion 28c has a generally cylindrical shape that protrudes downward from the second portion 28b. The third portion 28c has a tapered shape in which the outer diameter decreases toward the bottom. The third portion 28c is provided with a first threaded portion 28d. That is, the holding member 28 has the first threaded portion 28d. The first threaded portion 28d is a male screw provided on the outer peripheral surface of the third portion 28c.

[0025] As shown in FIG. 1 , the heat sink 31 has a plate shape that extends in a direction perpendicular to the first direction D1. The heat sink 31 is fixed to the lower end of the peripheral wall portion 21. The heat sink 31 closes the second opening 21b of the peripheral wall portion 21. The heat sink 31 holds the main body portion 32. More specifically, the main body portion 32 is fixed to the front surface 31a of the heat sink 31. The back surface 31b of the heat sink 31 is exposed to the outside of the semiconductor device 10. The heat sink 31 is made of a metal such as copper, aluminum, nickel, silver, or gold. In this embodiment, the holding member 28 is made of copper. That is, the holding member 28 is made of metal.

[0026] The main body 32 generates a high-frequency alternating current from a direct current supplied from, for example, an external power source (not shown). The main body 32 is accommodated inside the housing 20. The main body 32 is held by a heat sink 31. In this embodiment, the semiconductor device 10 has a plurality of chips 37. Some of the plurality of chips 37 are arranged at intervals in the second direction D2. Although not shown, the other chips 37 are arranged side by side in the third direction D3. Note that the chips 37 may be arranged at intervals only in the second direction D2. The main body 32 has a substrate 33, a first bonding layer 34, a second bonding layer 36, the chips 37, a plurality of wires 39, and a sealing portion 60.

[0027] The back surface 33f of the substrate 33 is fixed to the front surface 31a of the heat sink 31 by a first bonding layer 34. The first bonding layer 34 is made of, for example, solder, a silver sintered material, or the like. In this embodiment, the first bonding layer 34 is solder. The substrate 33 has a wiring portion 33a, an insulating substrate 33b, and a conductor portion 33c.

[0028] The insulating substrate 33b has a plate shape that extends in a direction perpendicular to the first direction D1. The insulating substrate 33b has insulating properties. The insulating substrate 33b is a ceramic substrate. In this embodiment, the insulating substrate 33b is a ceramic substrate made of ceramic such as silicon nitride or aluminum nitride.

[0029] The wiring portion 33a is provided on the surface of the insulating substrate 33b. The wiring portion 33a is made of metal. In this embodiment, the wiring portion 33a is made of copper. A circuit pattern (not shown) is formed on the wiring portion 33a. The surface of the wiring portion 33a is the device surface 33e. The device surface 33e is the surface of the substrate 33. The device surface 33e is the surface of the outer surface of the substrate 33 that faces one side (+D1 side) in the first direction D1. The device surface 33e faces the lid member 22 in the first direction D1.

[0030] The conductor portion 33c is provided on the back surface of the insulating substrate 33b. The conductor portion 33c is fixed to the front surface 31a of the heat sink 31 by the first bonding layer 34. This allows the main body portion 32 to be held by the heat sink 31. In other words, the heat sink 31 holds the outer surface of the substrate 33 that is different from the device surface 33e. The conductor portion 33c is made of metal. In this embodiment, the conductor portion 33c is made of copper.

[0031] The chip 37 is mounted on the device surface 33e of the substrate 33. More specifically, the back surface 37b of the chip 37 is fixed to the device surface 33e by a second bonding layer 36. The second bonding layer 36 is made of, for example, solder, a silver sintered material, or the like. In this embodiment, the second bonding layer 36 is solder. The chip 37 includes, for example, a power element for power control. The chip 37 is made of, for example, a semiconductor material such as silicon (Si), silicon carbide (SiC), or gallium nitride (GaN). Each of the chips 37 included in each main body portion 32 overlaps with the heat dissipation portion 25 of the lid member 22 when viewed from the first direction D1. Therefore, the front surface 37a of the chip 37, which is the surface of the outer surface of the chip 37 facing one side (+D1 side) of the first direction D1, faces the heat dissipation portion 25 in the first direction D1. When viewed from the first direction D1, the tip 37 overlaps with the plurality of holding members 28. As shown in Fig. 3, when viewed from the first direction D1, the tip 37 has a substantially rectangular shape. The tip 37 is provided with a plurality of electrode portions 37d and a protective portion 37f.

[0032] Each of the multiple electrode portions 37d is provided on the surface 37a of the chip 37. Each electrode portion 37d is made of metal. In the present embodiment, each electrode portion 37d is made of aluminum. The protective portion 37f is provided on the surface 37a of the chip 37. That is, the protective portion 37f is provided on the outer surface of the chip 37. The multiple protective portions 37f are provided on the chip 37. Each protective portion 37f is made of, for example, a resin such as polyimide (PI) or acrylic resin, or a metal such as copper. In the present embodiment, each protective portion 37f is made of polyimide. Each protective portion 37f is positioned so as not to overlap with the electrode portion 37d when viewed from the first direction D1. Note that if each protective portion 37f is made of a conductive material such as copper, a portion of each protective portion 37f may be positioned so as to overlap with the electrode portion 37d.

[0033] As shown in FIG. 1 , each of the plurality of wires 39 electrically connects the chip 37 and the wiring portion 33 a. The wires 39 are made of a metal such as aluminum or copper. In this embodiment, the wires 39 are made of aluminum. As shown in FIG. 3 , one end of each wire 39 is joined to a different electrode portion 37 d of the chip 37. The other end of each wire 39 is joined to the wiring portion 33 a. As a result, each of the plurality of wires 39 connects a different electrode portion 37 d to the substrate 33.

[0034] As shown in FIG. 1 , the sealing portion 60 covers the main body portion 32. The sealing portion 60 covers the chip 37. A portion of the sealing portion 60 is disposed between the chip 37 and the lid member 22. The sealing portion 60 is made of an insulating resin. For example, the sealing portion 60 is made of a resin mainly containing epoxy resin, phenolic resin, or acrylic resin. In this embodiment, the sealing portion 60 is made of a silicone resin. In this embodiment, the sealing portion 60 is gel-like. The sealing portion 60 can ensure insulation between the electrodes 37d, between the wires 39, and between the electrodes 37d and the wires 39. The sealing portion 60 can also protect the main body portion 32. Therefore, according to this embodiment, the sealing portion 60 can improve the operational stability of the semiconductor device 10.

[0035] The heat transfer pins 50 are rod-shaped and extend in the first direction D1. In this embodiment, the heat transfer pins 50 are generally cylindrical and extend in the first direction D1. The heat transfer pins 50 may have other shapes, such as a rectangular column. As shown in FIG. 2 , the heat transfer pins 50 have a tapered shape, with the outer diameter decreasing toward the bottom. The outer diameter of the lower end of the heat transfer pin 50, i.e., the end on the other side (−D1 side) in the first direction D1, is smaller than the outer diameter of the upper end, i.e., the end on one side (+D1 side) in the first direction D1. The outer diameter of the lower end of the heat transfer pin 50 is preferably 50 μm or more and 1.0 mm or less. The heat transfer pins 50 are made of metal, such as copper, aluminum, silver, or gold. In this embodiment, the heat transfer pins 50 are made of copper. That is, the heat transfer pins 50 are made of metal. The thermal conductivity of the heat transfer pins 50 is preferably greater than 200 W / m·K.

[0036] 1, in this embodiment, the lower ends of the heat transfer pins 50 contact the surface 37a of the chip 37. The semiconductor device 10 has a plurality of heat transfer pins 50. Preferably, each of the plurality of heat transfer pins 50 is arranged so that one or more heat transfer pins 50 contact one chip 37. As shown in FIG. 2, the heat transfer pins 50 have a second screw portion 50a.

[0037] The second screw portion 50a is a female screw recessed downward from the upward-facing surface of the heat transfer pin 50. The second screw portion 50a is threadedly engaged with the first screw portion 28d of the holding member 28. This allows the holding member 28 to detachably hold different heat transfer pins 50. The heat transfer pins 50 are also held to the heat dissipation unit 25 via the holding member 28. The heat transfer pins 50 extend downward from the holding member 28. As described above, when viewed from the first direction D1, each chip 37 overlaps with the holding member 28. Therefore, as shown in FIG. 1, the heat transfer pins 50 extend from the cover member 22 toward the chips 37. Note that, as shown in FIG. 2, it is not necessary to attach the heat transfer pins 50 to all holding members 28; some holding members 28 may not have the heat transfer pins 50 attached. In other words, in this embodiment, the holding members 28 to which the heat transfer pins 50 are attached can be selected.

[0038] According to this embodiment, the holding member 28 has the first screw portion 28d, and the heat transfer pin 50 has the second screw portion 50a that is threadedly engaged with the first screw portion 28d. This makes it possible to easily attach the heat transfer pin 50 to the holding member 28 during the manufacturing process of the semiconductor device 10. This prevents an increase in the number of steps required to manufacture the semiconductor device 10.

[0039] As shown in FIG. 1 , the heat transfer pins 50 are inserted into the sealing portion 60. As described above, the lower ends 50d of the heat transfer pins 50 contact the surface 37a of the chip 37. More specifically, as shown in FIG. 3 , the lower ends 50d of the heat transfer pins 50 contact the protective portions 37f provided on the surface 37a of the chip 37. Therefore, according to this embodiment, the heat transfer pins 50 contact the chip 37 via the protective portions 37f, thereby preventing the heat transfer pins 50 from coming into direct contact with the chip 37. This prevents damage to the chip 37 due to direct contact with the heat transfer pins 50. This improves the operational stability of the semiconductor device 10.

[0040] According to this embodiment, the cover member 22 has multiple holding members 28 that detachably hold different heat transfer pins 50. Therefore, as described above, it is possible to select the holding members 28 to which the heat transfer pins 50 are attached. Therefore, the heat transfer pins 50 can be attached only to holding members 28 that are positioned so as not to overlap the multiple electrode portions 37d and multiple wires 39 of the chip 37 when viewed from the first direction D1. This prevents the heat transfer pins 50 from coming into contact with the electrode portions 37d and wires 39 during the manufacturing process of the semiconductor device 10 and during operation of the semiconductor device 10. This prevents damage to the electrode portions 37d and wires 39 and prevents the wires 39 from coming off the electrode portions 37d. This further improves the operational stability of the semiconductor device 10.

[0041] Furthermore, in this embodiment, the holding member 28 to which the heat transfer pins 50 are attached can be selected depending on the arrangement of the electrode portions 37d provided on the chip 37 and the routing of the wires 39. Therefore, even if the semiconductor device 10 has a main body 32 with a different arrangement of the electrode portions 37d and the routing of the wires 39, it is easy to use the lid member 22 with the same configuration. Therefore, the versatility of the lid member 22 can be improved, and an increase in the number of steps and the manufacturing cost of the lid member 22 can be suppressed.

[0042] Although not shown in the drawings, in the process of manufacturing the semiconductor device 10, in the process of fixing the lid member 22 to the peripheral wall portion 21, the lid member 22 holding the heat transfer pins 50 is moved downward from the upper side of the main body portion 32 covered by the sealing portion 60. As described above, in this embodiment, the heat transfer pins 50 are made of metal. Also, as described above, in this embodiment, the sealing portion 60 is made of a gel-like resin. The hardness of the heat transfer pins 50 is greater than the hardness of the sealing portion 60. Therefore, in the process of fixing the lid member 22 to the peripheral wall portion 21, the heat transfer pins 50 can be easily inserted into the sealing portion 60 simply by moving the lid member 22 holding the heat transfer pins 50 downward. Therefore, the lower ends of the heat transfer pins 50 can be easily positioned close to the chip 37 simply by moving the lid member 22 from upper to lower. More specifically, in this embodiment, the lower ends of the heat transfer pins 50 can easily contact the chip 37 simply by moving the lid member 22 from upper to lower. Therefore, an increase in the number of steps required to manufacture the semiconductor device 10 can be suppressed.

[0043] As shown in FIG. 2 , the elastic member 29 is disposed inside the accommodation hole 26c of the heat dissipation unit 25. The elastic member 29 is disposed above the holding member 28. The upper end of the elastic member 29 is supported by the downward-facing inner surface of the accommodation hole 26c. The lower end of the elastic member 29 is supported by the first portion 28a of the holding member 28. The elastic member 29 applies a downward elastic force to the holding member 28. The elastic member 29 applies an elastic force toward the chip 37 to the heat transfer pin 50 via the holding member 28. In this embodiment, the elastic member 29 is a coil spring. The elastic member 29 may be a spring of another configuration, such as a leaf spring.

[0044] According to this embodiment, the semiconductor device 10 includes a substrate 33, a main body 32 having a chip 37 mounted on an upper side of the outer surface of the substrate 33, i.e., a device surface 33e facing one side (+D1 side) in the first direction D1, a housing 20 accommodating the main body 32, and heat transfer pins 50. The housing 20 has a lid member 22 facing the device surface 33e, and the heat transfer pins 50 are held by the lid member 22 and extend from the lid member 22 toward the chip 37. Therefore, as shown in FIG. 1 , the lower ends of the heat transfer pins 50 can be positioned close to the chip 37, allowing heat generated in the chip 37 to be transferred to the lid member 22 via the heat transfer pins 50. Furthermore, the heat of the chip 37 transferred to the lid member 22 can be dissipated to the outside of the semiconductor device 10. These features prevent the temperature of the chip 37 from becoming too high, thereby improving the operational stability of the semiconductor device 10.

[0045] According to this embodiment, the heat transfer pins 50 are made of metal and are in contact with the chip 37. Therefore, the thermal conductivity of the heat transfer pins 50 can be increased compared to when the heat transfer pins 50 are made of resin. Furthermore, because the heat transfer pins 50 are in contact with the chip 37, the amount of heat transferred from the chip 37 to the heat transfer pins 50 can be increased. This makes it possible to more effectively increase the amount of heat transferred from the chip 37 to the lid member 22 via the heat transfer pins 50. Therefore, the temperature of the chip 37 can be more effectively prevented from becoming too high, and the operational stability of the semiconductor device 10 can be more effectively improved.

[0046] According to this embodiment, the lid member 22 has a lid main body 23 and a heat dissipation portion 25. The heat transfer pins 50 are held by the heat dissipation portion 25. The thermal conductivity of the heat dissipation portion 25 is greater than that of the lid main body 23, and a portion of the heat dissipation portion 25 is exposed to the outside of the lid main body 23. Therefore, compared to when the heat transfer pins 50 are held by the lid main body 23, the amount of heat transferred from the chip 37 to the lid member 22 via the heat transfer pins 50 can be increased. Furthermore, because a portion of the heat dissipation portion 25 is exposed to the outside of the lid main body 23, the amount of heat dissipated from the lid member 22 to the outside of the semiconductor device 10 can be increased. As a result, the amount of heat dissipated from the chip 37 to the outside of the semiconductor device 10 via the heat transfer pins 50 and the heat dissipation portion 25 can be increased. Therefore, the temperature of the chip 37 can be more effectively prevented from becoming too high, thereby more effectively improving the operational stability of the semiconductor device 10.

[0047] According to this embodiment, the semiconductor device 10 includes an elastic member 29 that applies an elastic force to the heat transfer pins 50 toward the chip 37. Therefore, even if the dimensional tolerances in the first direction D1 of the components constituting the housing 20 and the main body 32 are large, the heat transfer pins 50 can be stably contacted with the chip 37. This prevents an increase in thermal resistance between the heat transfer pins 50 and the chip 37, thereby preventing a decrease in the amount of heat transferred from the chip 37 to the heat transfer pins 50. This prevents a decrease in the amount of heat transferred to the cover member 22 via the heat transfer pins 50. Therefore, even if the dimensional tolerances in the first direction D1 of the components constituting the housing 20 and the main body 32 are large, the temperature of the chip 37 can be prevented from becoming too high. This further improves the operational stability of the semiconductor device 10.

[0048] During operation of the semiconductor device 10, heat generated in the chip 37 and the wiring portion 33a causes thermal deformation of the substrate 33, which may result in fluctuations in the position of the chip 37 in the first direction D1. In response to this, as described above, the semiconductor device 10 of this embodiment includes the elastic member 29 that applies an elastic force to the heat transfer pins 50 toward the chip 37. Therefore, even if the position of the chip 37 in the first direction D1 fluctuates due to thermal deformation of the substrate 33, the heat transfer pins 50 can be stably brought into contact with the chip 37. As a result, as described above, a decrease in the amount of heat transferred from the chip 37 to the heat transfer pins 50 can be suppressed, thereby preventing the temperature of the chip 37 from becoming too high. This further enhances the operational stability of the semiconductor device 10.

[0049] According to this embodiment, the outer diameter of the lower end of the heat transfer pin 50 is smaller than the outer diameter of the upper end. This allows the outer diameter of the lower end of the heat transfer pin 50 that contacts the chip 37 to be reduced, which more effectively prevents the heat transfer pin 50 from contacting the electrode portion 37d and the wire 39, as shown in FIG. 3 . This more effectively prevents damage to the electrode portion 37d and the wire 39 and more effectively prevents the wire 39 from coming off the electrode portion 37d. This more effectively improves the operational stability of the semiconductor device 10.

[0050] Furthermore, according to this embodiment, the outer diameter of the upper portion of the heat transfer pin 50 can be increased, which makes it easier to reduce the thermal resistance of the heat transfer pin 50. This makes it possible to more effectively increase the amount of heat transferred from the chip 37 to the lid member 22 via the heat transfer pin 50. This more effectively prevents the temperature of the chip 37 from becoming too high, which more effectively improves the operational stability of the semiconductor device 10.

[0051] According to this embodiment, the semiconductor device 10 includes a metal heat sink 31 that holds a surface of the outer surface of the substrate 33 that is different from the device surface 33e. Therefore, heat generated in the chip 37 can be dissipated to the outside of the semiconductor device 10 via the heat sink 31. This makes it possible to further increase the amount of heat dissipated from the chip 37 to the outside of the semiconductor device 10. Therefore, it is possible to more effectively prevent the temperature of the chip 37 from becoming too high, and therefore it is possible to more effectively improve the operational stability of the semiconductor device 10.

[0052] 4 is a schematic cross-sectional view showing a semiconductor device 110 of this embodiment. In the semiconductor device 110 of this embodiment, the heat transfer pins 150 do not contact the chip 37. In the following description, the same components as those in the first embodiment are denoted by the same reference numerals, and their description will be omitted.

[0053] The heat transfer pin 150 has a generally cylindrical shape extending in the first direction D1. The heat transfer pin 150 is inserted into the sealing portion 60. As described above, in this embodiment, the heat transfer pin 150 does not contact the chip 37. More specifically, the lower end of the heat transfer pin 150 is located near the chip 37. The sealing portion 60 is disposed between the lower end of the heat transfer pin 150 and the chip 37. In other words, the heat transfer pin 150 contacts the chip 37 via the sealing portion 60. Other configurations of the heat transfer pin 150 of this embodiment are similar to those of the heat transfer pin 50 of the first embodiment described above.

[0054] According to this embodiment, the heat transfer pins 150 are held by the lid member 22, extend from the lid member 22 toward the chip 37, and are inserted into the sealing portion 60. If the sealing portion 60 were not provided, heat generated in the chip 37 would be transferred to the heat transfer pins 150 via the air. Therefore, the amount of heat transferred from the chip 37 to the heat transfer pins 150 is small. In contrast, in this embodiment, the chip 37 and the heat transfer pins 150 are in contact with each other via the sealing portion 60, which has a thermal conductivity higher than that of air. Therefore, the amount of heat transferred from the chip 37 to the heat transfer pins 150 can be increased compared to when the sealing portion 60 is not provided. Therefore, the temperature of the chip 37 can be prevented from becoming too high, thereby improving the operational stability of the semiconductor device 110.

[0055] 5 is a schematic cross-sectional view showing a semiconductor device 210 according to the present embodiment. The semiconductor device 210 according to the present embodiment includes a coolant flow path 270. In the following description, the same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted.

[0056] In this embodiment, the lid member 222 of the housing 220 has a plate shape that extends in a direction perpendicular to the first direction D1. The lid member 222 is disposed above the main body 32. The lid member 222 has a lid main body 23 and a heat dissipation portion 225.

[0057] The heat dissipation portion 225 has a generally rectangular prism shape that protrudes in the first direction D1. The heat dissipation portion 225 is held on the inner surface of the cover hole 23a. The heat dissipation portion 225 has a first heat dissipation portion 225a, an insulating portion 25f, a second heat dissipation portion 26, and a plurality of holding members 28.

[0058] The first heat dissipation portion 225a has a generally rectangular prism shape protruding in the first direction D1. A lower portion of the first heat dissipation portion 225a is located inside the lid hole portion 23a. An upper portion of the first heat dissipation portion 225a is located above the lid main body portion 23. The upper portion of the first heat dissipation portion 225a is exposed from the lid main body portion 23. An insertion portion 225d is provided in the portion of the first heat dissipation portion 225a above the lid main body portion 23. The insertion portion 225d is a hole that penetrates the first heat dissipation portion 225a in the second direction D2. In this embodiment, the insertion portion 225d is circular when viewed from the second direction D2. The insertion portion 225d may be a hole of another shape, such as a rectangular shape or an elliptical shape. Other configurations of the first heat dissipation portion 225a are similar to those of the first heat dissipation portion 25a of the first embodiment described above.

[0059] The refrigerant flow path 270 is a conduit through which the refrigerant C flows. A portion of the refrigerant flow path 270 passes through the insertion portion 225d. Therefore, a portion of the refrigerant flow path 270 is provided in the heat dissipation portion 225. When viewed from the second direction D2, the refrigerant flow path 270 has an annular shape. The portion of the refrigerant flow path 270 that passes through the insertion portion 225d is held on the inner circumferential surface of the insertion portion 225d. The portion of the refrigerant flow path 270 that passes through the insertion portion 225d contacts the inner circumferential surface of the insertion portion 225d. The refrigerant flow path 270 is made of a metal such as copper or aluminum. In this embodiment, the refrigerant flow path 270 is made of copper. In this embodiment, the refrigerant C is water. The refrigerant C may be other liquid refrigerants such as methanol and ethanol, or may be a gas refrigerant such as methane and ethane.

[0060] According to this embodiment, the semiconductor device 210 includes a coolant flow path 270 through which the coolant C flows, and a portion of the coolant flow path 270 is provided in the heat dissipation unit 225. Therefore, heat from the chip 37 transferred to the heat dissipation unit 225 via the heat transfer pins 50 can be transferred to the coolant C flowing inside the coolant flow path 270. Therefore, the heat from the chip 37 transferred to the heat dissipation unit 225 can be dissipated from the heat dissipation unit 225 to the air outside the semiconductor device 210, and can also be dissipated to the outside of the semiconductor device 210 by the coolant C. This increases the amount of heat that can be dissipated from the heat dissipation unit 225 to the outside of the semiconductor device 210. This more effectively prevents the temperature of the chip 37 from becoming too high, thereby more effectively improving the operational stability of the semiconductor device 210.

[0061] 6 is a schematic cross-sectional view showing a semiconductor device 310 according to the present embodiment. The semiconductor device 310 according to the present embodiment includes a heat dissipation member 375. In the following description, the same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted.

[0062] In this embodiment, the heat dissipation member 375 is a heat sink. The heat dissipation member 375 is made of a metal such as copper or aluminum. In this embodiment, the heat dissipation member 375 is made of copper. The heat dissipation member 375 has a plurality of fins 375a protruding upward. The heat dissipation member 375 is disposed outside the housing 20. The heat dissipation member 375 is attached to the surface 25b of the first heat dissipation section 25a. In other words, the heat dissipation member 375 is attached to the outer surface of the heat dissipation section 25. The heat dissipation member 375 dissipates heat from the cover member 22 to the outside of the housing 20. As described above, because the heat dissipation member 375 has a plurality of fins 375a, the contact area between the heat dissipation member 375 and the air outside the semiconductor device 310 can be increased.

[0063] According to this embodiment, the semiconductor device 310 includes a heat dissipation member 375 attached to the outer surface of the heat dissipation portion 25 and dissipating heat from the cover member 22 to the outside of the housing 20. Therefore, heat generated by the chip 37 and transferred to the heat dissipation portion 25 via the heat transfer pins 50 can be dissipated to the outside of the semiconductor device 310 via the heat dissipation member 375. As described above, the contact area between the heat dissipation member 375 and the air outside the semiconductor device 310 is large, so the amount of heat dissipated from the heat dissipation member 375 to the outside of the semiconductor device 310 can be increased. Therefore, the temperature of the chip 37 can be more effectively prevented from becoming too high, and the operational stability of the semiconductor device 310 can be more effectively improved.

[0064] According to at least one of the embodiments described above, a semiconductor device that can operate stably can be provided by having a lid member that faces the device surface and heat transfer pins that are held by the lid member and extend from the lid member toward the chip.

[0065] The semiconductor device according to the embodiments includes the following supplementary aspects. (Supplementary Note 1) A semiconductor device comprising: a main body having a substrate and a chip mounted on a device surface of an outer surface of the substrate that faces one side in a first direction; a housing that accommodates the main body; and heat transfer pins, wherein the housing has a lid member facing the device surface, and the heat transfer pins are held by the lid member and extend from the lid member toward the chip. (Supplementary Note 2) The semiconductor device according to Supplementary Note 1, wherein the heat transfer pins are made of metal and contact the chip. (Supplementary Note 3) The semiconductor device according to Supplementary Note 2, wherein a protective portion is provided on an outer surface of the chip, and the heat transfer pins contact the protective portion. (Supplementary Note 4) The semiconductor device according to any one of Supplementary Notes 1 to 3, wherein the main body has a sealing portion that covers the chip, the sealing portion having insulating properties, and the heat transfer pins are inserted into the sealing portion. (Supplementary Note 5) The semiconductor device according to any one of Supplementary Notes 1 to 4, wherein the lid member has a lid main body and a heat dissipation part, the heat transfer pins are held by the heat dissipation part, the thermal conductivity of the heat dissipation part is greater than the thermal conductivity of the lid main body, and a portion of the heat dissipation part is exposed to the outside of the lid main body. (Supplementary Note 6) The semiconductor device according to Supplementary Note 5, wherein the semiconductor device includes a refrigerant flow path through which a refrigerant flows, and a portion of the refrigerant flow path is provided in the heat dissipation part. (Supplementary Note 7) The semiconductor device according to Supplementary Note 5, wherein the semiconductor device includes a heat dissipation member attached to an outer surface of the heat dissipation part and dissipating heat from the lid member to the outside of the housing. (Supplementary Note 8) The semiconductor device according to any one of Supplementary Notes 1 to 7, wherein the lid member has a plurality of holding members that detachably hold different heat transfer pins from each other. (Supplementary Note 9) The semiconductor device according to Supplementary Note 8, wherein the holding member has a first screw portion, and the heat transfer pin has a second screw portion that is threadedly engaged with the first screw portion. (Supplementary Note 10) The semiconductor device according to any one of Supplementary Notes 1 to 9, further comprising an elastic member that applies an elastic force to the heat transfer pin toward the chip. (Supplementary Note 11) The semiconductor device according to any one of Supplementary Notes 1 to 10, wherein an outer diameter of an end portion of the heat transfer pin on the other side in the first direction is smaller than an outer diameter of an end portion of the heat transfer pin on one side in the first direction.(Supplementary Note 12) The semiconductor device according to any one of Supplementary Notes 1 to 11, further comprising a metal heat sink that holds a surface of the outer surface of the substrate that is different from the device surface. (Supplementary Note 13) The semiconductor device according to any one of Supplementary Notes 1 to 12, wherein the main body has a plurality of wires, and a plurality of electrode portions are provided on a surface of the outer surface of the chip that faces one side in the first direction, and each of the plurality of wires connects a different electrode portion to the substrate.

[0066] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, as well as within the scope of the invention described in the claims and their equivalents.

Claims

1. A semiconductor device comprising: a main body having a substrate and a chip mounted on a device surface of an outer surface of the substrate that faces one side in a first direction; a housing that accommodates the main body; and a heat transfer pin, wherein the housing has a lid member that faces the device surface, and the heat transfer pin is held by the lid member and extends from the lid member toward the chip.

2. The semiconductor device according to claim 1, wherein the heat transfer pin is made of metal and is in contact with the chip.

3. The semiconductor device according to claim 2, wherein a protective portion is provided on an outer surface of the chip, and the heat transfer pins are in contact with the protective portion.

4. The semiconductor device according to any one of claims 1 to 3, wherein the main body has a sealing portion that covers the chip, the sealing portion has insulating properties, and the heat transfer pin is inserted inside the sealing portion.

5. A semiconductor device as claimed in any one of claims 1 to 3, wherein the lid member has a lid main body and a heat dissipation portion, the heat transfer pins are held in the heat dissipation portion, the thermal conductivity of the heat dissipation portion is greater than the thermal conductivity of the lid main body, and a portion of the heat dissipation portion is exposed to the outside of the lid main body.

6. The semiconductor device according to claim 5, further comprising a coolant flow path through which a coolant flows, a portion of the coolant flow path being provided in the heat dissipation section.

7. The semiconductor device according to claim 5, further comprising a heat dissipation member attached to an outer surface of said heat dissipation portion for dissipating heat from said cover member to the outside of said housing.

8. The semiconductor device according to claim 1, wherein the cover member has a plurality of holding members that detachably hold different heat transfer pins.

9. The semiconductor device according to claim 8, wherein the holding member has a first threaded portion, and the heat transfer pin has a second threaded portion that is threadably engaged with the first threaded portion.

10. The semiconductor device according to claim 1, further comprising an elastic member that applies an elastic force to the heat transfer pin toward the chip.

11. The semiconductor device according to any one of claims 1 to 3, wherein the outer diameter of the end portion of the heat transfer pin on the other side in the first direction is smaller than the outer diameter of the end portion on the one side in the first direction.

12. The semiconductor device according to claim 1, further comprising a metal heat sink that holds a surface of the outer surface of the substrate that is different from the device surface.

13. A semiconductor device as claimed in any one of claims 1 to 3, wherein the main body portion has a plurality of wires, and a plurality of electrode portions are provided on an outer surface of the chip facing one side of the first direction, and each of the plurality of wires connects a different one of the electrode portions to the substrate.

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