Semiconductor device

Abstract

This semiconductor device is provided with: a semiconductor element that has an electrode positioned on one side in a first direction; a conduction member that is conductively bonded to the electrode; and a sealing resin that covers the semiconductor element and the conduction member. The conduction member has a first joint part that is conductively bonded to the electrode, and a main part that extends from the first joint part. The dimension of the first joint part in a direction orthogonal to the first direction is larger than the dimension of the main part in a direction orthogonal to the direction in which the main part extends. The sealing resin has a top surface that faces the one side in the first direction. The main part has a first part that is positioned closest to the top surface in the first direction. When viewed in the first direction, the first part is at a distance from the semiconductor element.

Description

Semiconductor Devices

[0001] The present disclosure relates to semiconductor devices.

[0002] Resin-packaged semiconductor devices are widely known, such as the semiconductor device disclosed in Patent Document 1. The semiconductor device disclosed in Patent Document 1 includes a semiconductor element provided with an electrode pad, a first lead, a bonding wire conductively bonded to the electrode pad and the first lead, and a sealing resin that covers the semiconductor element and the bonding wire. As a result, the first lead is electrically connected to the semiconductor element.

[0003] In the semiconductor device disclosed in Patent Document 1, if a crack occurs in the sealing resin, moisture may penetrate through the crack. If the amount of moisture that penetrates becomes excessive, the moisture will travel along the bonding wires and reach the electrode pads of the semiconductor element. If the moisture reaches the electrode pad electrodes, there is a concern that the electrode pads may corrode.

[0004] JP 2018-60908 A

[0005] [Summary] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above-mentioned circumstances, an object of the present disclosure is to provide a semiconductor device that can prevent corrosion of electrodes of semiconductor elements caused by moisture that penetrates from the outside through conductive members.

[0006] A first aspect of the present disclosure provides a semiconductor device comprising: a semiconductor element having an electrode located on one side in a first direction; a conductive member conductively bonded to the electrode; and a sealing resin covering the semiconductor element and the conductive member. The conductive member has a first bonding portion conductively bonded to the electrode and a main portion extending from the first bonding portion. The dimension of the first bonding portion in a direction perpendicular to the first direction is larger than the dimension of the main portion in a direction perpendicular to the direction in which the main portion extends. The sealing resin has a top surface facing the one side in the first direction. The main portion has a first portion located closest to the top surface in the first direction. When viewed in the first direction, the first portion is distant from the semiconductor element.

[0007] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0008] FIG. 1 is a perspective view of a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a plan view of the semiconductor device shown in FIG. 1. FIG. 3 is a plan view corresponding to FIG. 2, showing the sealing resin through. FIG. 4 is a bottom view of the semiconductor device shown in FIG. 1. FIG. 5 is a bottom view corresponding to FIG. 4, showing the sealing resin through. FIG. 6 is a front view of the semiconductor device shown in FIG. 1. FIG. 7 is a right side view of the semiconductor device shown in FIG. 1. FIG. 8 is a left side view of the semiconductor device shown in FIG. 1. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 3. FIG. 10 is a cross-sectional view taken along line X-X in FIG. 3. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 3. FIG. 12 is a partially enlarged view of FIG. 3. FIG. 13 is a partially enlarged view of FIG. 9. FIG. 14 is a partially enlarged view of FIG. 11. FIG. 15 is a partially enlarged cross-sectional view of a semiconductor device according to a modified example of the first embodiment of the present disclosure. FIG. 16 is a plan view of a semiconductor device according to a second embodiment of the present disclosure, showing the sealing resin through. 17 is a cross-sectional view taken along line XVII-XVII in FIG. 16 . FIG. 18 is a partially enlarged view of FIG. 17 . FIG. 19 is a plan view of a semiconductor device according to a third embodiment of the present disclosure, seen through the sealing resin. FIG. 20 is a cross-sectional view taken along line XX-XX in FIG. 19 . FIG. 21 is a partially enlarged view of FIG. 20 . FIG. 22 is a plan view of a semiconductor device according to a fourth embodiment of the present disclosure, seen through the sealing resin. FIG. 23 is a cross-sectional view taken along line XXIII-XXIII in FIG. 22 . FIG. 24 is a partially enlarged view of FIG. 23 . FIG. 25 is a cross-sectional view of a semiconductor device according to a fifth embodiment of the present disclosure.

[0009] DETAILED DESCRIPTION The present disclosure will be described in detail with reference to the accompanying drawings.

[0010] First Embodiment: A semiconductor device A10 according to a first embodiment of the present disclosure will be described with reference to FIGS. 1 to 14. The semiconductor device A10 includes a semiconductor element 10, a first lead 20, a plurality of second leads 30, a plurality of conductive members 40, and a sealing resin 50. The package format of the semiconductor device A10 is a small outline package (SOP). However, the package format of the semiconductor device A10 is not limited to SOP. For ease of understanding, FIGS. 3 and 5 show the sealing resin 50 in a see-through manner. In FIGS. 3 and 5, the outline of the sealing resin 50 is indicated by an imaginary line (double-dashed line).

[0011] In the description of the semiconductor device A10, for convenience, the normal direction to the mounting surface 211 of the pad portion 21 (described later) will be referred to as the "first direction z." One direction perpendicular to the first direction z will be referred to as the "second direction x." A direction perpendicular to both the first direction z and the second direction x will be referred to as the "third direction y."

[0012] 9 to 11 , the sealing resin 50 covers the semiconductor element 10, a portion of the first lead 20, a portion of each of the plurality of second leads 30, and the plurality of conductive members 40. The sealing resin 50 is an insulator. The sealing resin 50 is made of a material containing, for example, epoxy resin. When viewed in the first direction z, the sealing resin 50 has a rectangular shape.

[0013] As shown in FIGS. 6 to 8, the sealing resin 50 has a top surface 51, a bottom surface 52, a first side surface 53, a second side surface 54, and two third side surfaces 55.

[0014] 6 to 8, the top surface 51 faces one side in the first direction z. The top surface 51 faces the same side in the first direction z as a mounting surface 211 of the pad portion 21, which will be described later. The bottom surface 52 faces the opposite side to the top surface 51 in the first direction z.

[0015] As shown in FIG. 6 , the first side surface 53 is connected to the top surface 51 and the bottom surface 52 and faces one side in the second direction x. The first side surface 53 includes a first region 531, a second region 532, and a third region 533. The first region 531 includes the first direction z as an in-plane direction. When viewed in the first direction z, the first region 531 is located outward from the top surface 51 and the bottom surface 52. The second region 532 is located between the first region 531 and the top surface 51 in the first direction z. The third region 533 is located on the opposite side of the second region 532 with respect to the first region 531. The second region 532 and the third region 533 are each inclined with respect to the first region 531. The inclination angle α1 of the second region 532 with respect to the first region 531 is greater than the inclination angle β1 of the third region 533 with respect to the first region 531.

[0016] As shown in FIG. 6 , the second side surface 54 is connected to the top surface 51 and the bottom surface 52 and faces the opposite side from the first side surface 53 in the second direction x. The second side surface 54 includes a fourth region 541, a fifth region 542, and a sixth region 543. The fourth region 541 includes the first direction z as an in-plane direction. As viewed in the first direction z, the fourth region 541 is located outward from both the top surface 51 and the bottom surface 52. The fifth region 542 is located between the fourth region 541 and the top surface 51 in the first direction z. The sixth region 543 is located on the opposite side from the fifth region 542 with respect to the fourth region 541. The fifth region 542 and the sixth region 543 are each inclined with respect to the fourth region 541. The inclination angle α2 of the fifth region 542 with respect to the fourth region 541 is greater than the inclination angle β2 of the sixth region 543 with respect to the fourth region 541.

[0017] As shown in FIGS. 7 and 8 , each of the two third side surfaces 55 is connected to the top surface 51 and the bottom surface 52 and faces opposite each other in the third direction y. Each of the two third side surfaces 55 includes a seventh region 551, an eighth region 552, and a ninth region 553. The seventh region 551 includes the first direction z as an in-plane direction. When viewed in the first direction z, the seventh region 551 is located outward from each of the top surface 51 and the bottom surface 52. The eighth region 552 is located between the seventh region 551 and the top surface 51 in the first direction z. The ninth region 553 is located on the opposite side of the eighth region 552 from the seventh region 551. Each of the eighth region 552 and the ninth region 553 is inclined with respect to the seventh region 551. The inclination angle α3 of the eighth region 552 relative to the seventh region 551 is equal to the inclination angle β3 of the ninth region 553 relative to the seventh region 551 .

[0018] The first lead 20 and the second leads 30 each contain copper (Cu). The first lead 20 and the second leads 30 are obtained from the same lead frame.

[0019] 3 and 9 to 11, the semiconductor element 10 is mounted on the first lead 20. The first lead 20 has a pad portion 21, a first support portion 22, a second support portion 23, a third support portion 24, and a fourth support portion 25.

[0020] As shown in FIG. 3 and FIGS. 9 to 11 , the pad portion 21 carries the semiconductor element 10. When viewed in the first direction z, the first lead 20 is rectangular. The pad portion 21 has a mounting surface 211 and an exposed surface 212. The mounting surface 211 faces one side in the first direction z. The semiconductor element 10 is mounted on the mounting surface 211. The exposed surface 212 faces the opposite side to the mounting surface 211 in the first direction z. The exposed surface 212 is exposed from the bottom surface 52 of the sealing resin 50.

[0021] As shown in FIGS. 3 , 5 , and 9 , the first support portion 22 is connected to one side of the pad portion 21 in the second direction x. The first support portion 22 is located closer to the first side surface 53 of the sealing resin 50 than the second side surface 54 of the sealing resin 50. The first support portion 22 has a first surface 22A, a second surface 22B, and a first end surface 22C. The first surface 22A faces the same side as the mounting surface 211 in the first direction z. The second surface 22B faces the opposite side to the first surface 22A in the first direction z. The first surface 22A and the second surface 22B are covered with the sealing resin 50. The first end surface 22C faces one side in the second direction x. The first end surface 22C is exposed from a first region 531 of the first side surface 53.

[0022] 9 , a dimension H2 of the sealing resin 50 in the first direction z from the bottom surface 52 of the sealing resin 50 to the second surface 22B is smaller than a dimension H1 of the sealing resin 50 in the first direction z from the top surface 51 of the sealing resin 50 to the first surface 22A. In the semiconductor device A10, the dimension H2 is set to 50% or less of the dimension H1.

[0023] As shown in FIGS. 3 , 5 , and 9 , the first support portion 22 has a first main portion 221, a first connecting portion 222, and a first end portion 223. The first main portion 221 includes a first surface 22A and a second surface 22B. The first connecting portion 222 connects the first main portion 221 and the pad portion 21. The first connecting portion 222 is inclined relative to the mounting surface 211 in the second direction x toward a side away from the semiconductor element 10. The first end portion 223 is located on the opposite side of the first main portion 221 from the first connecting portion 222 in the second direction x, and is connected to the first main portion 221. The first end portion 223 includes a first surface 22A, a second surface 22B, and a first end surface 22C.

[0024] 3 , 5 , and 12 , the first end 223 has two first recesses 224 that are individually recessed from both sides in the third direction y. Each of the two first recesses 224 is connected to the periphery of the first surface 22A of the first end 223 and the periphery of the second surface 22B of the first end 223. In the semiconductor device A10, by providing the two first recesses 224 in the first end 223, the cross-sectional area of ​​the first end 223 along a direction perpendicular to the second direction x decreases from the first main portion 221 to the first end surface 22C.

[0025] As shown in FIGS. 12 and 13 , the first end portion 223 is located between the first surface 22A and the first end surface 22C in the second direction x and has an intermediate surface 223A connected to the first surface 22A. When viewed in the second direction x, the intermediate surface 223A overlaps the first main portion 221. The first end surface 22C is located between the intermediate surface 223A and the second surface 22B in the first direction z. The dimension of the intermediate surface 223A in the second direction x is smaller than the dimension of the first surface 22A of the first end portion 223 in the second direction x. The intermediate surface 223A is inclined inward of the first end portion 223 in the first direction z with respect to the first surface 22A and is also connected to the first end surface 22C. The intermediate surface 223A is covered with sealing resin 50. The first end surface 22C is spaced apart from the first region 531 of the first side surface 53 of the sealing resin 50 on the side where the pad portion 21 is located in the second direction x.

[0026] 12 and 13, the dimension b of the first end face 22C in the third direction y is different from the dimension h of the first end face 22C in the first direction z. In the semiconductor device A10, the dimension h is smaller than the dimension b.

[0027] As shown in FIGS. 3 , 5 , and 9 , the second support portion 23 is located on the opposite side of the pad portion 21 from the first support portion 22 in the second direction x and is connected to the pad portion 21. The second support portion 23 is located closer to the second side surface 54 of the sealing resin 50 than to the first side surface 53 of the sealing resin 50. The second support portion 23 has a third surface 23A, a fourth surface 23B, and a second end surface 23C. The third surface 23A faces the same side as the mounting surface 211 in the first direction z. The fourth surface 23B faces the opposite side from the third surface 23A in the first direction z. The third surface 23A and the fourth surface 23B are covered by the sealing resin 50. The second end surface 23C faces the opposite side from the first end surface 22C of the first support portion 22 in the second direction x. The second end surface 23C is exposed from a fourth region 541 of the second side surface 54.

[0028] 9 , a dimension H4 of the sealing resin 50 in the first direction z, which extends from the bottom surface 52 of the sealing resin 50 to the fourth surface 23B, is smaller than a dimension H3 of the sealing resin 50 in the first direction z, which extends from the top surface 51 of the sealing resin 50 to the third surface 23A. In the semiconductor device A10, the dimension H4 is set to be 50% or less of the dimension H3.

[0029] As shown in FIGS. 3 , 5 , and 9 , the second support portion 23 has a second main portion 231, a second connecting portion 232, and a second end portion 233. The second main portion 231 includes a third surface 23A and a fourth surface 23B. The second connecting portion 232 connects the second main portion 231 and the pad portion 21. The second connecting portion 232 is inclined relative to the mounting surface 211 in the second direction x toward a side away from the semiconductor element 10. The second end portion 233 is located on the opposite side of the second main portion 231 from the second connecting portion 232 in the second direction x, and is connected to the second main portion 231. The second end portion 233 includes a third surface 23A, a fourth surface 23B, and a second end surface 23C.

[0030] 3 and 5 , the second end 233 has two second recesses 234 that are individually recessed from both sides in the third direction y. Each of the two second recesses 234 is connected to the periphery of the third surface 23A of the second end 233 and the periphery of the fourth surface 23B of the second end 233. In the semiconductor device A10, by providing the two second recesses 234 in the second end 233, the cross-sectional area of ​​the second end 233 along a direction perpendicular to the second direction x decreases from the second main portion 231 to the second end surface 23C.

[0031] As shown in FIGS. 3 , 5 , and 10 , the third support portion 24 is located on the same side as the first support portion 22 with respect to the pad portion 21 in the second direction x and is connected to the pad portion 21. The third support portion 24 is separated from the first support portion 22 in the third direction y. The third support portion 24 has a fifth surface 24A, a sixth surface 24B, and a third end surface 24C. The fifth surface 24A faces the same side as the mounting surface 211 in the first direction z. The sixth surface 24B faces the opposite side from the fifth surface 24A in the first direction z. The fifth surface 24A and the sixth surface 24B are covered with the sealing resin 50. The third end surface 24C faces the same side as the first end surface 22C of the first support portion 22 in the second direction x. The third end surface 24C is exposed from a first region 531 of the first side surface 53 of the sealing resin 50.

[0032] 10 , a dimension H6 of the sealing resin 50 in the first direction z from the bottom surface 52 of the sealing resin 50 to the sixth surface 24B is smaller than a dimension H5 of the sealing resin 50 in the first direction z from the top surface 51 of the sealing resin 50 to the fifth surface 24A. In the semiconductor device A10, the dimension H6 is set to be 50% or less of the dimension H5.

[0033] As shown in FIGS. 3 , 5 , and 10 , the third support portion 24 has a third main portion 241, a third connecting portion 242, and a third end portion 243. The third main portion 241 includes a fifth surface 24A and a sixth surface 24B. The third connecting portion 242 connects the third main portion 241 and the pad portion 21. The third connecting portion 242 is inclined relative to the mounting surface 211 in the second direction x toward a side away from the semiconductor element 10. The third end portion 243 is located on the opposite side of the third main portion 241 from the third connecting portion 242 in the second direction x, and is connected to the third main portion 241. The third end portion 243 includes a fifth surface 24A, a sixth surface 24B, and a third end surface 24C.

[0034] 3 and 5 , the third end 243 has two third recesses 244 that are individually recessed from both sides in the third direction y. Each of the two third recesses 244 is connected to the periphery of the fifth surface 24A of the third end 243 and the periphery of the sixth surface 24B of the third end 243. In the semiconductor device A10, by providing the two third recesses 244 in the third end 243, the cross-sectional area of ​​the third end 243 along a direction perpendicular to the second direction x decreases from the third main portion 241 to the third end surface 24C.

[0035] As shown in FIGS. 3 , 5 , and 10 , the fourth support portion 25 is located on the same side as the second support portion 23 with respect to the pad portion 21 in the second direction x and is connected to the pad portion 21. The fourth support portion 25 is separated from the second support portion 23 in the third direction y. The fourth support portion 25 has a seventh surface 25A, an eighth surface 25B, and a fourth end surface 25C. The seventh surface 25A faces the same side as the mounting surface 211 in the first direction z. The eighth surface 25B faces the opposite side from the seventh surface 25A in the first direction z. The seventh surface 25A and the eighth surface 25B are covered with the sealing resin 50. The fourth end surface 25C faces the same side as the second end surface 23C of the second support portion 23 in the second direction x. The fourth end surface 25C is exposed from a fourth region 541 of the second side surface 54 of the sealing resin 50.

[0036] 10 , a dimension H8 of the sealing resin 50 in the first direction z from the bottom surface 52 of the sealing resin 50 to the eighth surface 25B is smaller than a dimension H7 of the sealing resin 50 in the first direction z from the top surface 51 of the sealing resin 50 to the seventh surface 25A of the sealing resin 50. In the semiconductor device A10, this dimension H8 is set to 50% or less of the dimension H7.

[0037] As shown in FIGS. 3 , 5 , and 10 , the fourth support portion 25 has a fourth main portion 251, a fourth connecting portion 252, and a fourth end portion 253. The fourth main portion 251 includes a seventh surface 25A and an eighth surface 25B. The fourth connecting portion 252 connects the fourth main portion 251 and the pad portion 21. The fourth connecting portion 252 is inclined relative to the mounting surface 211 in the second direction x toward a side away from the semiconductor element 10. The fourth end portion 253 is located on the opposite side of the fourth main portion 251 from the fourth connecting portion 252 in the second direction x, and is connected to the fourth main portion 251. The fourth end portion 253 includes a seventh surface 25A, an eighth surface 25B, and a fourth end surface 25C.

[0038] 3 and 5 , the fourth end 253 has two fourth recesses 254 that are individually recessed from both sides in the third direction y. Each of the two fourth recesses 254 is connected to the periphery of the seventh surface 25A of the fourth end 253 and the periphery of the eighth surface 25B of the fourth end 253. In the semiconductor device A10, by providing the two fourth recesses 254 in the fourth end 253, the cross-sectional area of ​​the fourth end 253 along a direction perpendicular to the second direction x decreases from the fourth main portion 251 to the fourth end surface 25C.

[0039] As shown in FIG. 3 and FIGS. 9 to 11, the semiconductor element 10 is mounted on the pad portion 21 of the first lead 20. The semiconductor element 10 controls the functions of the semiconductor device A10. The type of semiconductor element 10 is not limited, and it may be an IC (Integrated Circuit) or an LSI (Large Scale Integration). The semiconductor element 10 is bonded to the mounting surface 211 of the pad portion 21 via a bonding layer 19. The bonding layer 19 is made of a paste containing metal particles. The metal particles are, for example, silver (Ag). Therefore, the bonding layer 19 is a conductor. Alternatively, the bonding layer 19 may be solder.

[0040] As shown in FIGS. 3 and 11 , the semiconductor element 10 has an element surface 11 and a plurality of electrodes 12. The element surface 11 faces the same side as the mounting surface 211 of the pad portion 21 in the first direction z. The element surface 11 is located between the top surface 51 of the sealing resin 50 and the first surface 22A of the first support portion 22, the third surface 23A of the second support portion 23, the fifth surface 24A of the third support portion 24, and the seventh surface 25A of the fourth support portion 25 in the first direction z. As a result, when viewed in a direction perpendicular to the first direction z, the semiconductor element 10 includes portions protruding in the first direction z from each of the first support portion 22, the second support portion 23, the third support portion 24, and the fourth support portion 25. As shown in FIG. 11 , the dimension d of the sealing resin 50 in the first direction z, from the top surface 51 of the sealing resin 50 to the element surface 11, is greater than the dimension t of the semiconductor element 10 in the first direction z. The plurality of electrodes 12 are provided on the element surface 11. Each of the plurality of electrodes 12 is electrically connected to a circuit configured in the semiconductor element 10. The plurality of electrodes 12 includes aluminum (Al).

[0041] As shown in FIGS. 3 and 5 , the multiple second leads 30 are arranged on both sides of the first lead 20 in the third direction y. Each of the multiple second leads 30 is electrically connected to the semiconductor element 10. The multiple second leads 30 include multiple first terminals 30A and multiple second terminals 30B. The multiple first terminals 30A are located on one side of the first lead 20 in the third direction y. The multiple first terminals 30A are arranged along the second direction x. Each of the multiple first terminals 30A protrudes from a seventh region 551 of one of the two third side surfaces 55 of the sealing resin 50. The multiple second terminals 30B are located on the opposite side of the multiple first terminals 30A with respect to the first lead 20 in the third direction y. The multiple second terminals 30B are arranged along the second direction x. Each of the multiple second terminals 30B protrudes from the seventh region 551 of the other of the two third side surfaces 55 .

[0042] 3 and 5, each of the multiple second leads 30 has an inner portion 31 and an outer portion 32. The inner portion 31 is covered with a sealing resin 50. As shown in FIGS. 3 and 11, the inner portion 31 of each of the multiple second leads 30 has a connection surface 311. The connection surface 311 faces the same side as the mounting surface 211 of the pad portion 21 in the first direction z. The connection surface 311 is located between the mounting surface 211 and the top surface 51 of the sealing resin 50 in the first direction z. In the semiconductor device A10, the connection surface 311 is located between the mounting surface 211 and the element surface 11 of the semiconductor element 10 in the first direction z. Furthermore, in the semiconductor device A10, the connection surfaces 311 of each of the multiple second leads 30, the first surface 22A of the first support portion 22, the third surface 23A of the second support portion 23, the fifth surface 24A of the third support portion 24, and the seventh surface 25A of the fourth support portion 25 are all included in the same plane.

[0043] 3 and 5 , the outer part 32 is connected to one of the inner parts 31 of the corresponding plurality of second leads 30. The outer part 32 protrudes from a seventh region 551 of one of the two third side surfaces 55 of the sealing resin 50. The surface of the outer part 32 is plated with tin, for example. When viewed in the first direction z, the outer part 32 extends in the third direction y. When viewed in the second direction x, the outer part 32 is bent in a gull-wing shape.

[0044] 5 and 11 , the outer part 32 of each of the multiple second leads 30 has a mounting surface 321. The mounting surface 321 is exposed from the sealing resin 50. In the first direction z, the mounting surface 321 faces the opposite side to the connection surface 311 of the corresponding inner part 31 and is located farthest from the connection surface 311 of the corresponding inner part 31. The mounting surface 321 protrudes from within a plane including the bottom surface 52 of the sealing resin 50. The mounting surface 321 is inclined with respect to the bottom surface 52.

[0045] 3 and 11 , each of the plurality of conductive members 40 is individually conductively bonded to the plurality of electrodes 12 of the semiconductor element 10 and the connection surfaces 311 of each of the plurality of second leads 30. As a result, each of the plurality of second leads 30 is electrically connected to the semiconductor element 10. The plurality of conductive members 40 are wires. The plurality of conductive members 40 contain, for example, gold (Au). Alternatively, the plurality of conductive members 40 may contain aluminum or copper.

[0046] As shown in FIGS. 3 and 11 , each of the multiple conductive members 40 has a first bonding portion 41, a main portion 42, and a second bonding portion 43. The first bonding portion 41 is conductively bonded to one of the multiple electrodes 12 of the semiconductor element 10. The first bonding portion 41 is a so-called ball bonding portion. The main portion 42 extends from the first bonding portion 41. As shown in FIG. 14 , the dimension R of the first bonding portion 41 in a direction perpendicular to the first direction z is larger than the dimension r of the main portion 42 in a direction perpendicular to the direction in which the main portion 42 extends. The second bonding portion 43 is located on the opposite side of the main portion 42 from the first bonding portion 41 and is connected to the main portion 42. The second bonding portion 43 is conductively bonded to the connection surface 311 of one of the multiple second leads 30.

[0047] 3 and 11 , the main portion 42 of each of the plurality of conductive members 40 has a first portion 44. The first portion 44 is located closest to the top surface 51 of the sealing resin 50 in the first direction z. The first portion 44 corresponds to one of the vertices of the plurality of conductive members 40. As viewed in the first direction z, the first portion 44 is spaced apart from the semiconductor element 10. In the semiconductor device A10, as viewed in the first direction z, the first portion 44 overlaps the mounting surface 211 of the pad portion 21 of the first lead 20.

[0048] 11 and 14 , the main portion 42 of each of the plurality of conductive members 40 includes a first main portion 421 and a second main portion 422. The first main portion 421 is a portion of the main portion 42 that extends from the first joint portion 41 to the first portion 44. The second main portion 422 is a portion of the main portion 42 that extends from the second joint portion 43 to the first portion 44. The length L3 of the second main portion 422 is different from the length of the first main portion 421. In the semiconductor device A10, the length L3 of the second main portion 422 is shorter than the length of the first main portion 421.

[0049] As shown in FIGS. 11 and 14 , the first main portion 421 of each of the plurality of conductive members 40 has a second portion 45. The second portion 45 is located between the first joint portion 41 and the first portion 44. When viewed in the first direction z, the second portion 45 overlaps the semiconductor element 10. The first main portion 421 of each of the plurality of conductive members 40 includes a first section 421A and a second section 421B. The first section 421A is a portion of the first main portion 421 that extends from the first joint portion 41 to the second portion 45. The second section 421B is a portion of the first main portion 421 that extends from the first portion 44 to the second portion 45. The first section 421A and the second section 421B each include a linear portion. The first section 421A and the second section 421B extend in different directions.

[0050] 14 , in the first main portion 421 of each main portion 42 of the plurality of conductive members 40, the length L1 of the first section 421A is shorter than the length L2 of the second section 421B. Here, the sum of the length L1 of the first section 421A and the length L2 of the second section 421B corresponds to the length of the first main portion 421. The gradient i2 of the second section 421B with respect to the third direction y is gentler than the gradient i1 of the first section 421A with respect to the third direction y.

[0051] 14 , the second main portion 422 of each of the main portions 42 of the plurality of conductive members 40 is linear. In each of the main portions 42 of the plurality of conductive members 40, the gradient i3 of the second main portion 422 with respect to the third direction y is steeper than the gradient i2 of the second section 421B of the first main portion 421 with respect to the third direction y. Furthermore, the gradient i3 of the second main portion 422 with respect to the third direction y is gentler than the gradient i1 of the first section 421A of the first main portion 421 with respect to the third direction y.

[0052] Next, a semiconductor device A11 according to a modified example of the first embodiment of the present disclosure will be described with reference to Fig. 15. Fig. 15 corresponds to Fig. 13 showing the semiconductor device A10. In the semiconductor device A11, the configuration of the first support portion 22 of the first lead 20 is different from that of the semiconductor device A10.

[0053] As shown in FIG. 15 , the first end surface 22C of the first support portion 22 is flush with the first region 531 of the first side surface 53 of the sealing resin 50 .

[0054] Next, the effects of the semiconductor device A10 will be described.

[0055] The semiconductor device A10 includes a semiconductor element 10 having an electrode 12, a conductive member 40 conductively bonded to the electrode 12, and a sealing resin 50 covering the semiconductor element 10 and the conductive member 40. The conductive member 40 has a first bonding portion 41 conductively bonded to the electrode 12 and a main portion 42 extending from the first bonding portion 41. The main portion 42 has a first portion 44 located closest to a top surface 51 of the sealing resin 50 in the first direction z. As viewed in the first direction z, the first portion 44 is farthest from the semiconductor element 10. Moisture that penetrates through the top surface 51 of the sealing resin 50 attempts to reach the electrode 12 by traveling from the first portion 44 along the main portion 42. Therefore, by adopting this configuration, the length of the first main portion 421 of the main portion 42 extending from the first bonding portion 41 to the first portion 44 is increased, making it more difficult for moisture to reach the electrode 12. Therefore, with this configuration, in the semiconductor device A10, corrosion of the electrodes 12 of the semiconductor element 10 due to moisture that penetrates through the conductive member 40 from the outside can be prevented.

[0056] The semiconductor device A10 further includes a second lead 30 electrically connected to the electrode 12 of the semiconductor element 10. The conductive member 40 has a second joint portion 43 conductively joined to the second lead 30. The main portion 42 of the conductive member 40 includes a first main portion 421 extending from the first joint portion 41 to the first portion 44 and a second main portion 422 extending from the second joint portion 43 to the first portion 44. The length L3 of the second main portion 422 is shorter than the length of the first main portion 421. With this configuration, moisture that penetrates the top surface 51 of the sealing resin 50 and reaches the first portion 44 is more likely to flow down the second main portion 422 than the first main portion 421. This effectively suppresses corrosion of the electrode 12 of the semiconductor element 10.

[0057] The first main portion 421 of the conductive member 40 has a second portion 45 located between the first joint portion 41 and the first portion 44. The first main portion 421 includes a first section 421A extending from the first joint portion 41 to the second portion 45 and a second section 421B extending from the first portion 44 to the second portion 45. The length L3 of the first section 421A is shorter than the length L2 of the second section 421B. The gradient i2 of the second section 421B in a direction perpendicular to the first direction z is gentler than the gradient i1 of the first section 421A in a direction perpendicular to the first direction z. This configuration can further reduce moisture flowing down the first main portion 421. This can more effectively suppress corrosion of the electrodes 12 of the semiconductor element 10.

[0058] In the main portion 42 of the conductive member 40, the gradient i3 of the second main portion 422 in the direction perpendicular to the first direction z is steeper than the gradient i2 of the second section 421B of the first main portion 421 in the direction perpendicular to the first direction z. By adopting this configuration, more moisture can be caused to flow down the second main portion 422 than the first main portion 421.

[0059] The semiconductor element 10 has an element surface 11 on which electrodes 12 are arranged. A dimension d of the sealing resin 50 in the first direction z, from the top surface 51 of the sealing resin 50 to the element surface 11, is larger than a dimension t of the semiconductor element 10 in the first direction z. This configuration can increase the distance from the top surface 51 to the first portion 44 of the conductive member 40. This can further reduce moisture that penetrates from the top surface 51 and reaches the first portion 44.

[0060] The semiconductor device A10 further includes a first lead 20 on which the semiconductor element 10 is mounted. The first lead 20 is exposed from a bottom surface 52 of the sealing resin 50. This configuration can improve the heat dissipation properties of the semiconductor device A10.

[0061] Second Embodiment: A semiconductor device A20 according to a second embodiment of the present disclosure will be described with reference to Figures 16 to 18. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated explanations will be omitted. For ease of understanding, Figure 16 shows the sealing resin 50 in a see-through manner. In Figure 16, the outline of the sealing resin 50 is shown by imaginary lines.

[0062] In the semiconductor device A20, the configuration of the plurality of conductive members 40 differs from that of the semiconductor device A10.

[0063] 16 and 17 , as viewed in the first direction z, the first portion 44 of the main portion 42 of each of the plurality of conductive members 40 is spaced apart from the mounting surface 211 of the pad portion 21 of the first lead 20. As viewed in the first direction z, the main portion 42 of each of the plurality of conductive members 40 is located between the first lead 20 and the plurality of second leads 30. As shown in FIG. 18 , the length (the sum of the length L1 and the length L2) of the first main portion 421 of the main portion 42 is longer than the length L3 of the second main portion 422 of the main portion 42.

[0064] Next, the effects of the semiconductor device A20 will be described.

[0065] The semiconductor device A20 includes a semiconductor element 10 having electrodes 12, a conductive member 40 conductively bonded to the electrodes 12, and a sealing resin 50 covering the semiconductor element 10 and the conductive member 40. The conductive member 40 has a first bonding portion 41 conductively bonded to the electrodes 12 and a main portion 42 extending from the first bonding portion 41. The main portion 42 has a first portion 44 located closest to a top surface 51 of the sealing resin 50 in the first direction z. As viewed in the first direction z, the first portion 44 is distant from the semiconductor element 10. Therefore, with this configuration, the semiconductor device A20 can also prevent corrosion of the electrodes 12 of the semiconductor element 10 due to moisture infiltrating from the outside through the conductive member 40. Furthermore, by incorporating a configuration common to the semiconductor device A10, the semiconductor device A20 achieves the same effects as the semiconductor device A10.

[0066] In the semiconductor device A20, when viewed in the first direction z, the first portion 44 of the conductive member 40 is spaced apart from the mounting surface 211 of the first lead 20. By adopting this configuration, the length of the first main portion 421 in the main portion 42 of the conductive member 40 can be made longer.

[0067] Third Embodiment: A semiconductor device A30 according to a third embodiment of the present disclosure will be described with reference to Figures 19 to 21. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated explanations will be omitted. For ease of understanding, Figure 19 shows the sealing resin 50 in a see-through manner. In Figure 19, the outline of the sealing resin 50 is shown by imaginary lines.

[0068] In the semiconductor device A30, the configuration of the plurality of conductive members 40 differs from that of the semiconductor device A10.

[0069] 19 and 20 , when viewed in the first direction z, the first portion 44 of each main portion 42 of the plurality of conductive members 40 individually overlaps the connection surface 311 of each of the plurality of second leads 30. As shown in Fig. 21 , the length (the sum of lengths L1 and L2) of the first main portion 421 of the main portion 42 is longer than the length L3 of the second main portion 422 of the main portion 42. The length L3 of the second main portion 422 is shorter than the length L2 of the second section 421B of the first main portion 421.

[0070] Next, the effects of the semiconductor device A30 will be described.

[0071] The semiconductor device A30 includes a semiconductor element 10 having electrodes 12, a conductive member 40 conductively bonded to the electrodes 12, and a sealing resin 50 covering the semiconductor element 10 and the conductive member 40. The conductive member 40 has a first bonding portion 41 conductively bonded to the electrodes 12 and a main portion 42 extending from the first bonding portion 41. The main portion 42 has a first portion 44 located closest to a top surface 51 of the sealing resin 50 in the first direction z. As viewed in the first direction z, the first portion 44 is distant from the semiconductor element 10. Therefore, with this configuration, the semiconductor device A30 can also prevent corrosion of the electrodes 12 of the semiconductor element 10 due to moisture infiltrating from the outside through the conductive member 40. Furthermore, by having a configuration common to the semiconductor device A10, the semiconductor device A30 achieves the same effects as the semiconductor device A10.

[0072] In the semiconductor device A30, when viewed in the first direction z, the first portion 44 of the conductive member 40 overlaps the first lead 20. By adopting this configuration, the length of the first main portion 421 in the main portion 42 of the conductive member 40 can be further increased.

[0073] In the semiconductor device A30, the length L3 of the second main portion 422 of the conductive member 40 is shorter than the length L2 of the second section 421B of the first main portion 421 of the conductive member 40. By adopting this configuration, more moisture can be caused to flow down the second main portion 422 than the first main portion 421.

[0074] Fourth Embodiment: A semiconductor device A40 according to a fourth embodiment of the present disclosure will be described with reference to Figures 22 to 24. In these figures, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated explanations will be omitted. For ease of understanding, Figure 22 shows the sealing resin 50 in a see-through manner. In Figure 22, the outline of the sealing resin 50 is shown by imaginary lines.

[0075] In the semiconductor device A40, the configurations of the second leads 30 and the conductive members 40 are different from those of the semiconductor device A10.

[0076] 22 and 23 , when viewed in the first direction z, the first portion 44 of each main portion 42 of the plurality of conductive members 40 individually overlaps the connection surface 311 of each of the plurality of second leads 30. As shown in Fig. 24 , the length (the sum of lengths L1 and L2) of the first main portion 421 of the main portion 42 is longer than the length L3 of the second main portion 422 of the main portion 42. The length L3 of the second main portion 422 is shorter than the length L2 of the second section 421B of the first main portion 421.

[0077] As shown in FIG. 23, the connection surface 311 of each of the plurality of second leads 30 is located between the element surface 11 of the semiconductor element 10 and the top surface 51 of the sealing resin 50 in the first direction z.

[0078] Next, the effects of the semiconductor device A40 will be described.

[0079] The semiconductor device A40 includes a semiconductor element 10 having an electrode 12, a conductive member 40 conductively bonded to the electrode 12, and a sealing resin 50 covering the semiconductor element 10 and the conductive member 40. The conductive member 40 has a first bonding portion 41 conductively bonded to the electrode 12 and a main portion 42 extending from the first bonding portion 41. The main portion 42 has a first portion 44 located closest to a top surface 51 of the sealing resin 50 in the first direction z. As viewed in the first direction z, the first portion 44 is distant from the semiconductor element 10. Therefore, with this configuration, the semiconductor device A40 can also prevent corrosion of the electrode 12 of the semiconductor element 10 due to moisture infiltrating from the outside through the conductive member 40. Furthermore, by having a configuration common to the semiconductor device A10, the semiconductor device A40 achieves the same effects as the semiconductor device A10.

[0080] In the semiconductor device A40, when viewed in the first direction z, the first portion 44 of the conductive member 40 overlaps the first lead 20. By adopting this configuration, the length of the first main portion 421 in the main portion 42 of the conductive member 40 can be further increased.

[0081] In the semiconductor device A40, the connection surface 311 of the second lead 30 is located in the first direction z between the element surface 11 of the semiconductor element 10 and the top surface 51 of the sealing resin 50. By adopting this configuration, in the main portion 42 of the conductive member 40, the length L3 of the second main portion 422 can be made even shorter than the length L2 of the second section 421B of the first main portion 421.

[0082] Fifth Embodiment: A semiconductor device A50 according to a fifth embodiment of the present disclosure will be described with reference to Fig. 25. In this figure, elements that are the same as or similar to those in the semiconductor device A10 described above are given the same reference numerals, and duplicated descriptions will be omitted. Here, Fig. 25 corresponds to Fig. 11, which shows the semiconductor device A10.

[0083] In the semiconductor device A50, the configuration of the plurality of conductive members 40 differs from that of the semiconductor device A10.

[0084] 25 , in each of the plurality of conductive members 40, at least a portion of the main portion 42 is curved. The main portion 42 is convex in the first direction z toward the side toward which the top surface 51 of the sealing resin 50 faces. In the semiconductor device A50 as well, the length of the first main portion 421 of the main portion 42 is longer than the length of the second main portion 422 of the main portion 42.

[0085] Next, the effects of the semiconductor device A50 will be described.

[0086] The semiconductor device A50 includes a semiconductor element 10 having an electrode 12, a conductive member 40 conductively bonded to the electrode 12, and a sealing resin 50 covering the semiconductor element 10 and the conductive member 40. The conductive member 40 has a first bonding portion 41 conductively bonded to the electrode 12 and a main portion 42 extending from the first bonding portion 41. The main portion 42 has a first portion 44 located closest to a top surface 51 of the sealing resin 50 in the first direction z. As viewed in the first direction z, the first portion 44 is distant from the semiconductor element 10. Therefore, with this configuration, the semiconductor device A50 can also prevent corrosion of the electrode 12 of the semiconductor element 10 due to moisture infiltrating from the outside through the conductive member 40. Furthermore, by incorporating a configuration common to the semiconductor device A10, the semiconductor device A50 achieves the same effects as the semiconductor device A10.

[0087] The present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the present disclosure can be freely modified in various ways.

[0088] The present disclosure includes embodiments described in the following supplementary notes. Supplementary note 1. A semiconductor device comprising: a semiconductor element having an electrode located on one side in a first direction; a conductive member conductively bonded to the electrode; and a sealing resin covering the semiconductor element and the conductive member, wherein the conductive member has a first joint portion conductively bonded to the electrode and a main portion extending from the first joint portion, a dimension of the first joint portion in a direction perpendicular to the first direction being larger than a dimension of the main portion in a direction perpendicular to the extension direction of the main portion, the sealing resin having a top surface facing the one side in the first direction, and the main portion having a first portion located closest to the top surface in the first direction, and the first portion being farther from the semiconductor element as viewed in the first direction. Supplementary note 2. The semiconductor device according to Supplementary note 1, further comprising: a first lead having a mounting surface facing the same side as the top surface in the first direction, the semiconductor element being bonded to the mounting surface, and at least a portion of the first lead being covered by the sealing resin. Supplementary Note 3. The semiconductor device according to Supplementary Note 2, further comprising a second lead electrically connected to the electrode, wherein the conductive member has a second joint portion located on the opposite side of the main portion from the first joint portion and connected to the main portion, wherein the second joint portion is conductively joined to the second lead, wherein the main portion includes a first main portion extending from the first joint portion to the first portion and a second main portion extending from the second joint portion to the first portion, and wherein lengths of the first main portion and the second main portion are different from each other. Supplementary Note 4. The semiconductor device according to Supplementary Note 3, wherein the length of the second main portion is shorter than the length of the first main portion. Supplementary Note 5. The semiconductor device according to Supplementary Note 4, wherein the first portion is spaced apart from the mounting surface when viewed in the first direction. Supplementary Note 6. The semiconductor device according to Supplementary Note 5, wherein the first portion overlaps the second lead when viewed in the first direction. Supplementary Note 7. The semiconductor device according to Supplementary Note 3, wherein the conductive member is a wire.Supplementary Note 8. The semiconductor device according to Supplementary Note 7, wherein the first main portion has a second portion located between the first joint portion and the first portion, the first main portion including a first section extending from the first joint portion to the second portion and a second section extending from the first section to the second portion, the first section and the second section each including a linear portion, and the extending directions of the first section and the second section differ from each other. Supplementary Note 9. The semiconductor device according to Supplementary Note 8, wherein the second section overlaps the semiconductor element as viewed in the first direction. Supplementary Note 10. The semiconductor device according to Supplementary Note 9, wherein the length of the first section is shorter than the length of the second section. Supplementary Note 11. The semiconductor device according to Supplementary Note 10, wherein the gradient of the second section with respect to a direction perpendicular to the first direction is gentler than the gradient of the first section with respect to a direction perpendicular to the first direction. Supplementary Note 12. The semiconductor device according to Appendix 11, wherein the second main portion includes a linear portion, and wherein a gradient of the second main portion in a direction perpendicular to the first direction is steeper than a gradient of the second section in a direction perpendicular to the first direction. Appendix 13. The semiconductor device according to Appendix 12, wherein a length of the second main portion is shorter than a length of the second section. Appendix 14. The semiconductor device according to Appendix 3, wherein at least a portion of the main portion is curved. Appendix 15. The semiconductor device according to Appendix 14, wherein the main portion is convex toward the side toward which the top surface faces in the first direction. Appendix 16. The semiconductor device according to any of Appendixes 3 to 15, wherein the semiconductor element has an element surface facing the same side as the mounting surface in the first direction, the electrode is disposed on the element surface, and the dimension of the sealing resin in the first direction from the top surface to the element surface is greater than the dimension of the semiconductor element in the first direction. Appendix 17. The semiconductor device according to claim 16, wherein the second lead has a connection surface facing the same side as the mounting surface in the first direction and covered with the sealing resin, the second bonding portion is conductively bonded to the connection surface, and the connection surface is located between the element surface and the top surface in the first direction. Appendix 18. The semiconductor device according to claim 16, wherein the sealing resin has a bottom surface facing the opposite side to the top surface in the first direction, and the first lead is exposed from the bottom surface.Appendix 19. The semiconductor device according to Appendix 16, wherein the electrode includes aluminum. Appendix 20. The semiconductor device according to Appendix 16, wherein the second lead has a connection surface facing the same side as the mounting surface in the first direction and covered with the sealing resin, the second joint portion is conductively joined to the connection surface, and the connection surface is located between the mounting surface and the element surface in the first direction. Appendix 21. The semiconductor device according to Appendix 20, wherein the second lead has a mounting surface exposed from the sealing resin and facing the opposite side to the connection surface in the first direction, the mounting surface is located farthest from the connection surface in the first direction, and the mounting surface protrudes from within a plane including the bottom surface. Appendix 22. The semiconductor device according to Appendix 21, wherein the mounting surface is inclined with respect to the bottom surface. Appendix 23. The semiconductor device according to Appendix 18, wherein the first lead has a pad portion including the mounting surface and a first support portion connected to one side of the pad portion in a second direction orthogonal to the first direction, the pad portion being exposed from the bottom surface, the first support portion having a first surface facing the same side as the top surface in the first direction and covered with the sealing resin, a second surface facing the opposite side to the first surface in the first direction and covered with the sealing resin, and a first end surface facing one side in the second direction and exposed from the sealing resin, and a dimension of the sealing resin in the first direction from the bottom surface to the second surface is smaller than a dimension of the sealing resin in the first direction from the top surface to the first surface. The semiconductor device according to Appendix 23, wherein the first support portion has a first main portion including the first surface and the second surface, a first connecting portion connecting the first main portion and the pad portion, and a first end portion located on the opposite side of the first main portion in the second direction from the first connecting portion and connected to the first main portion, the first end portion including the first surface and the first end face, and a cross-sectional area of ​​the first end portion along a direction perpendicular to the second direction decreases from the first main portion to the first end face. Appendix 25. The semiconductor device according to Appendix 24, wherein the first connecting portion is inclined with respect to the mounting surface in the second direction away from the pad portion.Appendix 26. The semiconductor device according to Appendix 25, wherein the first lead has a second support portion located on the opposite side of the pad portion from the first support portion in the second direction and connected to the pad portion, the second support portion having a third surface facing the same side as the top surface in the first direction and covered with the sealing resin, a fourth surface facing the opposite side from the third surface in the first direction and covered with the sealing resin, and a second end surface facing the opposite side from the first end surface in the second direction and exposed from the sealing resin, and wherein a dimension of the sealing resin in the first direction from the bottom surface to the fourth surface is smaller than a dimension of the sealing resin in the first direction from the top surface to the third surface. The semiconductor device according to Appendix 26, wherein the second support portion has a second main portion including the third surface and the fourth surface, a second connecting portion connecting the second main portion and the pad portion, and a second end portion located on the opposite side of the second main portion in the second direction from the second connecting portion and connected to the second main portion, the second end portion including the third surface and the second end surface, the second connecting portion being inclined with respect to the mounting surface on a side away from the pad portion in the second direction, and a cross-sectional area of ​​the second end portion along a direction perpendicular to the second direction decreases from the second main portion to the second end surface. The semiconductor device described in Appendix 27, wherein the first lead is located on the same side as the first support portion with respect to the pad portion in the second direction and has a third support portion connected to the pad portion, the third support portion is spaced from the first support portion in a third direction perpendicular to both the first direction and the second direction, the third support portion faces the same side as the first end face in the second direction and has a third end face exposed from the sealing resin, and the cross-sectional area of ​​the third support portion along a direction perpendicular to the second direction decreases from the side where the pad portion is located to the third end face.Appendix 29. The semiconductor device according to Appendix 27, wherein the sealing resin has a first side surface and a second side surface facing opposite each other in the second direction, the first side surface including a first region including the first direction as an in-plane direction, a second region located between the first region and the top surface in the first direction, and a third region located on the opposite side of the second region with respect to the first region, each of the second region and the third region being inclined with respect to the first region, the first end surface being exposed from the first region, and the second end surface being exposed from the second side surface. Appendix 30. The semiconductor device according to Appendix 29, wherein an inclination angle of the second region with respect to the first region is greater than an inclination angle of the third region with respect to the first region.

[0089] A10, A20, A30, A40, A50: semiconductor device 10: semiconductor element 11: element surface 12: electrode 19: bonding layer 20: first lead 21: pad portion 211: mounting surface 212: exposed surface 22: first support portion 22A: first surface 22B: second surface 22C: first end surface 221: first main portion 222: first connecting portion 223: first end portion 223A: intermediate surface 224: first recessed portion 23: second support portion 23A: third surface 23B: fourth surface 23C: second end surface 231: second main portion 232: second connecting portion 233: second end portion 234: second recessed portion 24: third support portion 24A: fifth surface 24B: sixth surface 24C: Third end surface 241: Third main portion 242: Third connecting portion 243: Third end portion 244: Third recessed portion 25: Fourth support portion 25A: Seventh surface 25B: Eighth surface 25C: Fourth end surface 251: Fourth main portion 252: Fourth connecting portion 253: Fourth end portion 254: Fourth recessed portion 30: Second lead 30A: First terminal 30B: Second terminal 31: Inner portion 311: Connection surface 32: Outer portion 321: Mounting surface 40: Conductive member 41: First joint portion 42: Main portion 421: First main portion 421A: First section 421B: Second section 422: Second main portion 43: Second joint portion 44: First portion 45: Second portion 50: Sealing resin 51: Top surface 52: Bottom surface 53: First side surface 531 to 533: First region to third region 54: Second side surface 541 to 543: Fourth region to sixth region 55: Third side surface 551 to 553: Seventh region to ninth region z: First direction x: Second direction y: Third direction

Claims

1. A semiconductor device comprising: a semiconductor element having an electrode located on one side in a first direction; a conductive member conductively joined to the electrode; and a sealing resin covering the semiconductor element and the conductive member, wherein the conductive member has a first joint portion conductively joined to the electrode and a main portion extending from the first joint portion, a dimension of the first joint portion in a direction perpendicular to the first direction is larger than a dimension of the main portion in a direction perpendicular to a direction in which the main portion extends, the sealing resin has a top surface facing the one side in the first direction, the main portion has a first portion located closest to the top surface in the first direction, and when viewed in the first direction, the first portion is distant from the semiconductor element.

2. The semiconductor device according to claim 1, further comprising a first lead having a mounting surface facing the same side as the top surface in the first direction, the semiconductor element being bonded to the mounting surface, and at least a portion of the first lead being covered with the sealing resin.

3. The semiconductor device according to claim 2, further comprising a second lead electrically connected to the electrode, the conductive member being located on the opposite side of the main portion from the first joint and having a second joint connected to the main portion, the second joint being electrically connected to the second lead, the main portion including a first main portion extending from the first joint to the first portion and a second main portion extending from the second joint to the first portion, and the lengths of the first main portion and the second main portion being different from each other.

4. The semiconductor device according to claim 3, wherein the length of said second main portion is shorter than the length of said first main portion.

5. The semiconductor device according to claim 4, wherein, when viewed in the first direction, the first portion is spaced apart from the mounting surface.

6. The semiconductor device according to claim 5, wherein said first portion overlaps said second lead when viewed in said first direction.

7. The semiconductor device according to claim 3, wherein the conductive member is a wire.

8. The semiconductor device described in claim 7, wherein the first main portion has a second portion located between the first joint portion and the first portion, the first main portion includes a first section from the first joint portion to the second portion and a second section from the first portion to the second portion, each of the first section and the second section includes a straight portion, and the directions in which the first section and the second section extend are different from each other.

9. The semiconductor device according to claim 8, wherein the second portion overlaps the semiconductor element when viewed in the first direction.

10. The semiconductor device according to claim 9, wherein the length of said first section is shorter than the length of said second section.

11. The semiconductor device according to claim 10, wherein the gradient of the second section in the direction perpendicular to the first direction is gentler than the gradient of the first section in the direction perpendicular to the first direction.

12. The semiconductor device described in claim 11, wherein the second main portion includes a straight portion, and the gradient of the second main portion in a direction perpendicular to the first direction is steeper than the gradient of the second section in the direction perpendicular to the first direction.

13. The semiconductor device according to claim 12, wherein the length of said second main portion is shorter than the length of said second section.

14. The semiconductor device according to claim 3, wherein at least a portion of said main portion is curved.

15. The semiconductor device according to claim 14, wherein said main portion is convex toward said top surface in said first direction.

16. A semiconductor device as described in any one of claims 3 to 15, wherein the semiconductor element has an element surface facing the same side as the mounting surface in the first direction, the electrodes are arranged on the element surface, and the dimension of the sealing resin in the first direction from the top surface to the element surface is larger than the dimension of the semiconductor element in the first direction.

17. The semiconductor device described in claim 16, wherein the second lead has a connection surface facing the same side as the mounting surface in the first direction and covered with the sealing resin, the second joint portion is conductively joined to the connection surface, and the connection surface is located between the element surface and the top surface in the first direction.

18. The semiconductor device according to claim 16, wherein the sealing resin has a bottom surface facing the opposite side to the top surface in the first direction, and the first lead is exposed from the bottom surface.

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