Coil, coil assembly, coil device, and semiconductor process apparatus

Abstract

Provided in the present application are a coil, a coil assembly, a coil device, and an inductively coupled plasma semiconductor process apparatus. The coil extends on a plane by rotation. The coil comprises multiple arc-shaped portions and multiple connecting portions, the arc-shaped portions and the connecting portions being arranged about the rotational center of the coil. The coil has a first end and a second end; from the first end to second end of the coil, the arc-shaped portions and the connecting portions are alternately arranged at intervals in sequence, the rotation radii of the arc-shaped portions gradually increasing. At least one of the multiple arc-shaped portions comprises a first deformed segment, a circular-arc segment and a second deformed segment that are connected in sequence. According to the coil of the present application, by providing the first deformed segment and second deformed segment on the arc-shaped portion, the area difference caused by the clearance of the coil for terminal posts is offset, enabling a more uniform distribution of plasma density above a wafer.

Description

Coil, coil assembly, coil device and semiconductor process equipment Technical Field

[0001] The present application relates to the field of semiconductor manufacturing, and in particular, to a coil, a coil assembly, a coil device and an inductively coupled plasma semiconductor process equipment for exciting plasma. Background Art

[0002] Coils are crucial components for exciting plasmas, which are used in semiconductor process equipment such as etching and deposition. Taking semiconductor etching equipment as an example, dry etching refers to the use of plasma in semiconductor manufacturing. With the rapid development of semiconductor component manufacturing processes, the requirements for component performance and integration are becoming increasingly stringent, which in turn leads to higher and higher demands for uniformity in semiconductor etching processes.

[0003] In commonly used inductively coupled plasma (ICP) etching equipment, radio frequency current flows through a coil in the upper electrode loop, generating an electromagnetic field in the chamber through inductive coupling. Various reactive gases are then introduced into the chamber through pipes. The electromagnetic field generated by the coil excites the reactive gases to form a plasma. This plasma then reaches the silicon wafer surface in the chamber through mechanisms such as diffusion and electromigration, causing etching.

[0004] With the continuous development of semiconductor manufacturing technology, the diameter of wafers is getting larger and larger, and the critical dimension (CD) is getting smaller and smaller. Improving the uniformity of plasma distribution has become an urgent problem to be solved.

[0005] Summary of the Invention

[0006] The present application aims to at least solve the problem of uneven plasma distribution in the prior art, and proposes a coil, a coil assembly, a coil device and an inductively coupled plasma semiconductor process equipment for exciting plasma.

[0007] To achieve the purpose of the present application, according to a first aspect of the present application, a coil for exciting plasma is disclosed, which is suitable for semiconductor process equipment. The coil is arranged on a plane in a rotating and extending manner.

[0008] The coil includes a plurality of arc-shaped portions and a plurality of connecting portions, wherein the arc-shaped portions and the connecting portions are arranged around the rotation center of the coil, and adjacent arc-shaped portions are connected via the connecting portions;

[0009] The coil has a first end and a second end, and from the first end to the second end of the coil, the arc-shaped portion and the connecting portion are alternately spaced and the turning radius of the arc-shaped portion gradually increases;

[0010] At least one of the plurality of arc-shaped portions includes a first deformation segment, an arc segment, and a second deformation segment connected in sequence, wherein the first deformation segment and the second deformation segment are respectively connected to two ends of the arc segment, the center of the circle on which the arc segment lies is the rotation center, and the rotation radius of the arc portion is the distance from the arc segment to the rotation center.

[0011] The maximum distance from the first deformation section of the arc-shaped portion to the rotation center is greater than the rotation radius of the arc-shaped portion;

[0012] The maximum distance between the second deformation section of the arc-shaped portion and the rotation center is smaller than the rotation radius of the arc-shaped portion.

[0013] Furthermore, on the plane, the first deformation segment protrudes in a direction away from the rotation center relative to the circle where the arc segment is located, and the second deformation segment retracts in a direction toward the rotation center relative to the circle where the arc segment is located.

[0014] Furthermore, from the first end to the second end of the coil, the first deformation segments and the second deformation segments are alternately arranged.

[0015] Furthermore, the first end and the second end of the coil are both located on a first virtual straight line.

[0016] The first end and the second end of the coil are respectively located on both sides of a second virtual straight line, and the second virtual straight line is perpendicular to the first virtual straight line and intersects at the rotation center.

[0017] Furthermore, from the first end to the second end of the coil, two adjacent arc-shaped portions are respectively located on both sides of the first virtual straight line;

[0018] The first deformation section and the second deformation section on the same arc-shaped portion are respectively located on both sides of the second virtual straight line.

[0019] Furthermore, from the first end to the second end of the coil, a plurality of the first deformation segments and a plurality of the second deformation segments are alternately distributed in sequence.

[0020] Furthermore, the first deformation segment is arc-shaped, and all vertices of the first deformation segment are located on a third virtual straight line passing through the rotation center;

[0021] The second deformation segment is arc-shaped, and all vertices of the second deformation segment are located on a fourth virtual straight line passing through the rotation center.

[0022] Further, the third virtual straight line is perpendicular to the fourth virtual straight line; or

[0023] The angle formed by the third virtual straight line and the first virtual straight line is in a range of 20° to 40°; or

[0024] The angle formed by the fourth virtual straight line and the first virtual straight line is in a range of 20° to 40°; or

[0025] The angle formed by the third virtual straight line and the first virtual straight line is in a range of 50° to 70°; or

[0026] The angle formed by the fourth virtual straight line and the first virtual straight line ranges from 50° to 70°.

[0027] Furthermore, the diameter of the wafer to be processed is φ, and on the same arc portion, the protruding distance of the first deformation section is H1,

[0028] The value of H1 / φ ranges from 0.005 to 0.1; or

[0029] The value range of H1 / φ is 0.0067 to 0.05.

[0030] Furthermore, the diameter of the wafer to be processed is φ, and on the same arc portion, the retracted distance of the second deformation section is H2,

[0031] The value of H2 / φ ranges from 0.005 to 0.1; or

[0032] The value range of H2 / φ is 0.0067 to 0.05.

[0033] According to a second aspect of the present application, a coil for exciting plasma is also disclosed, which is suitable for use in semiconductor processing equipment. The coil is arranged on a plane in a rotationally extended manner. The coil includes multiple arc-shaped portions and multiple connecting portions. The arc-shaped portions and the connecting portions are arranged around the rotation center of the coil, and the multiple arc-shaped portions are connected by the connecting portions.

[0034] The arc portion has a deformation section, and the deformation section is used to change the shape of the induced electromagnetic field generated by the coil surrounded by the arc portion, so as to adjust the distribution of plasma generated by the induced electromagnetic field.

[0035] Furthermore, the coil has a first end and a second end, and the arc-shaped portions are distributed sequentially from the first end to the second end of the coil, and the gyration radius of the arc-shaped portions gradually increases.

[0036] Furthermore, the deformation section includes a first deformation section and a second deformation section, and the first deformation section and the second deformation section are located on the same arc-shaped portion;

[0037] The maximum distance between the first deformation section and the rotation center is greater than the rotation radius of the arc-shaped portion where the first deformation section is located;

[0038] The maximum distance between the second deformation section and the rotation center is smaller than the rotation radius of the arc portion where the second deformation section is located.

[0039] Furthermore, the arc portion also has an arc segment, the first deformation segment and the second deformation segment are respectively connected to the two ends of the arc segment, the center of the circle where the arc segment is located is the rotation center, and the rotation radius of the arc portion is the distance from the arc segment to the rotation center.

[0040] Furthermore, the first end and the second end of the coil are both located on a first virtual straight line.

[0041] The first end and the second end of the coil are respectively located on both sides of a second virtual straight line, and the second virtual straight line is perpendicular to the first virtual straight line and intersects the rotation center;

[0042] From the first end to the second end of the coil, two adjacent arc-shaped portions are respectively located on both sides of the first virtual straight line;

[0043] The first deformation section and the second deformation section on the same arc-shaped portion are respectively located on two sides of the second virtual straight line.

[0044] Furthermore, the first deformation segment is arc-shaped, and all vertices of the first deformation segment are located on a third virtual straight line passing through the rotation center;

[0045] The second deformation segment is arc-shaped, and all vertices of the second deformation segment are located on a fourth virtual straight line passing through the rotation center.

[0046] Furthermore, the third virtual straight line is perpendicular to the fourth virtual straight line.

[0047] Furthermore, the maximum turning radius of the coil is smaller than the radius of the wafer to be processed, and from the first end to the second end of the coil, the plurality of first deformation segments and the plurality of second deformation segments are alternately distributed in sequence.

[0048] Furthermore, the angle formed by the third virtual straight line and the first virtual straight line is in a range of 20° to 40°; or

[0049] The angle formed by the fourth virtual straight line and the first virtual straight line ranges from 50° to 70°.

[0050] Furthermore, the minimum turning radius of the coil is greater than the radius of the wafer to be processed, and from the first end to the second end of the coil, a plurality of the second deformation segments and a plurality of the first deformation segments are alternately distributed in sequence.

[0051] Furthermore, the angle formed by the third virtual straight line and the first virtual straight line is in a range of 50° to 70°; or

[0052] The angle formed by the fourth virtual straight line and the first virtual straight line ranges from 20° to 40°.

[0053] According to a third aspect of the present application, a coil assembly for exciting plasma is also disclosed, which is suitable for semiconductor process equipment and includes a plurality of the above-mentioned coils, and the plurality of coils are uniformly distributed circumferentially with the rotation center as the deflection center.

[0054] According to the fourth aspect of the present application, a coil device for exciting plasma is also disclosed, which is suitable for semiconductor process equipment and includes the above-mentioned coil assembly, wherein there are at least two coil assemblies, and the at least two coil assemblies are spaced apart from the inside to the outside.

[0055] Furthermore, the maximum turning radius of the coil of the innermost coil assembly is smaller than the radius of the wafer to be processed, and from the first end to the second end of the coil, the plurality of first deformation segments and the plurality of second deformation segments are alternately distributed in sequence;

[0056] The minimum turning radius of the coil of the outermost coil assembly is greater than the radius of the wafer to be processed. From the first end to the second end of the coil, multiple second deformation segments and multiple first deformation segments are alternately distributed in sequence.

[0057] Furthermore, the first deformation section and the second deformation section are both arc-shaped;

[0058] The vertices of all the first deformation segments on the innermost coil assembly are located on a third virtual straight line passing through the rotation center;

[0059] The vertices of all the second deformation segments on the outermost coil assembly are located on a fifth virtual straight line passing through the center of rotation;

[0060] The third virtual straight line coincides with the fifth virtual straight line.

[0061] Furthermore, the first deformation section and the second deformation section are both arc-shaped;

[0062] The vertices of all the second deformation segments on the innermost coil assembly are located on a fourth virtual straight line passing through the rotation center;

[0063] The vertices of all the first deformation segments on the outermost coil assembly are located on a sixth virtual straight line passing through the rotation center;

[0064] The fourth virtual straight line coincides with the sixth virtual straight line.

[0065] According to the fifth aspect of the present application, an inductively coupled plasma semiconductor process equipment is also disclosed, including a process chamber and the above-mentioned coil, or the above-mentioned coil assembly, or the above-mentioned coil device, to excite the gas in the process chamber into plasma.

[0066] The coil of the present application is provided with a first deformation section and a second deformation section on the arc portion, so that the maximum distance from the first deformation section to the center of rotation is greater than the rotation radius of the arc portion, and the maximum distance from the second deformation section to the center of rotation is less than the rotation radius of the arc portion. This is equivalent to adjusting the corresponding area enclosed by the coil in the circumferential direction, thereby offsetting the area difference caused by the coil avoiding the terminal, so that the plasma density distribution in the area above the wafer is more uniform, thereby greatly improving the process uniformity in the radial direction of the wafer and improving the process quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0067] FIG1 is a schematic structural diagram of an inductively coupled plasma semiconductor process equipment in the prior art;

[0068] FIG2 is a schematic diagram of the coil structure of the upper electrode in the prior art;

[0069] FIG3 is a schematic diagram of a deformation area of ​​a coil of an upper electrode in the prior art;

[0070] FIG4 is a schematic diagram of a quadrant corresponding to a deformation area of ​​a coil of an upper electrode in the prior art;

[0071] FIG5 is a graph showing the etching rate of an inductively coupled plasma semiconductor process equipment in the prior art;

[0072] FIG6 is a diagram showing eccentricity data of an inductively coupled plasma semiconductor process device in the prior art;

[0073] FIG7 is a schematic structural diagram of a coil according to the first embodiment of the present application;

[0074] FIG8 is a schematic structural diagram of a coil assembly according to the first embodiment of the present application;

[0075] FIG9 is a schematic structural diagram of a coil according to a second embodiment of the present application;

[0076] FIG10 is a schematic structural diagram of a coil assembly according to a second embodiment of the present application;

[0077] FIG11 is a schematic structural diagram of a coil device including the coil assembly of Example 1 and the coil assembly of Example 2 of the present application;

[0078] FIG12 is a graph showing the etching rate of an inductively coupled plasma semiconductor process equipment using the coil device of the present application;

[0079] FIG13 is an eccentric diagram of an inductively coupled plasma semiconductor process equipment using the coil device of the present application;

[0080] List of reference numerals: 10, coil; 11, arc portion; 12, connecting portion; 111, first deformation segment; 112, second deformation segment; 113, arc segment; O, center of rotation; R, radius of rotation; D1, first virtual straight line; D2, second virtual straight line; D3, third virtual straight line; D4, fourth virtual straight line; D5, fifth virtual straight line; D6, sixth virtual straight line. DETAILED DESCRIPTION

[0081] To enable those skilled in the art to better understand the technical solution of the present application, the coil, coil assembly, coil device and inductively coupled plasma semiconductor process equipment for exciting plasma provided by the present application are described in detail below with reference to the accompanying drawings.

[0082] As shown in FIG1 , the inductively coupled plasma semiconductor process equipment in the prior art includes a housing 1, a reaction chamber 2, an upper matcher 3, an upper electrode 4, a lower matcher 5, and a lower electrode 6. The upper electrode 4 includes an inner coil 7 and an outer coil 8, and the inner coil 7 and the outer coil 8 are electrically connected to the upper matcher 3, respectively. The coil structure of the conventional technical solution is generally shown in FIG2 , where the inner coil 7 and the outer coil 8 form a concentric coil group and are connected in parallel. In the coil structure shown in FIG2 , the inner coil 7 includes two 1.5-turn single coils, and the outer coil 8 also includes two 1.5-turn single coils. As each single coil rotates and extends, the rotation radius gradually increases.

[0083] The inventors of the present application discovered that, as shown in FIG3 , since both ends of each single coil need to be connected to the terminal 9, when the coil extends to the position of the terminal 9 with a preset turning radius, in order to avoid the terminal 9, the coil will have a relatively obvious deformation near the terminal 9, resulting in it being inconsistent with the preset turning radius. As shown in FIG3 , in the A' area and the B' area, a situation of R>r' will occur (R is the actual turning radius of the single coil; r' is the preset turning radius).

[0084] As shown in Figures 3 and 4 , because R > r' in regions A' and B', the area of ​​the region enclosed by the coil in quadrants I and III is larger than that in quadrants II and IV. Consequently, the overall inductance corresponding to quadrants I and III is slightly larger than that corresponding to quadrants II and IV. Since the inductance is proportional to the plasma density, the plasma density corresponding to quadrants I and III is greater than that corresponding to quadrants II and IV. This results in a faster etching rate in the regions corresponding to quadrants I and III on the wafer than in the regions corresponding to quadrants II and IV (see the etching rate data graph of conventional inductively coupled plasma semiconductor processing equipment shown in Figure 5 ). Due to the relatively uneven etching rate, the eccentric etching rate graph of the prior art, as shown in Figure 6 , results in a special eccentric "butterfly"-shaped graph after etching. This not only results in an uneven overall etching rate, but also has large variations between sampling points, seriously affecting process quality. Therefore, improving etching uniformity and process quality is an urgent problem to be solved in this field.

[0085] To address the above technical issues, the first embodiment of the present application, as shown in FIG7 , discloses a coil for exciting plasma, suitable for use in semiconductor process equipment such as etching and deposition, such as inductively coupled plasma semiconductor process equipment. A coil 10 is arranged on a plane in a rotationally extended manner. Coil 10 includes a plurality of arcuate portions 11 and a plurality of connecting portions 12 . The arcuate portions 11 and connecting portions 12 are arranged around a rotation center O of coil 10 , and adjacent arcuate portions 11 are connected by connecting portions 12 .

[0086] As shown in FIG7 , the coil 10 has a first end and a second end. From the first end to the second end of the coil 10 , the arc portion 11 and the connecting portion 12 are alternately spaced and the gyration radius R of the arc portion 11 gradually increases.

[0087] Among them, at least one of the multiple arc-shaped portions 11 includes a first deformation segment 111, an arc segment 113 and a second deformation segment 112 connected in sequence, the first deformation segment 111 and the second deformation segment 112 are respectively connected to the two ends of the arc segment 113, the center of the circle where the arc segment 113 is located is the rotation center O, the rotation radius R of the arc-shaped portion 11 is the distance from the arc segment 113 to the rotation center O, the maximum distance from the first deformation segment 111 of the arc-shaped portion 11 to the rotation center O is greater than the rotation radius R of the arc-shaped portion 11; the maximum distance from the second deformation segment 112 of the arc-shaped portion 11 to the rotation center O is less than the rotation radius R of the arc-shaped portion 11.

[0088] The coil 10 of the present application is provided with a first deformation segment 111 and a second deformation segment 112 on the arc portion 11, so that the maximum distance from the first deformation segment 111 to the rotation center O is greater than the rotation radius R of the arc portion 11 where it is located, and the maximum distance from the second deformation segment 112 to the rotation center O is less than the rotation radius R of the arc portion 11 where it is located. This is equivalent to adjusting the corresponding area in the circumferential direction of the area enclosed by the coil 10, thereby offsetting the area difference caused by the coil 10 avoiding the terminal, thereby making the plasma density distribution in the area above the wafer more uniform, thereby greatly improving the process uniformity in the radial direction of the wafer and improving the process quality.

[0089] The coil 10 of the present application is described in detail below with reference to Example 1:

[0090] As shown in Figure 7 , on the plane where coil 10 lies, the first and second ends of coil 10 are both located on a first imaginary line D1. Simultaneously, the first and second ends of coil 10 are located on either side of a second imaginary line D2, respectively. Second imaginary line D2 is perpendicular to first imaginary line D1 and intersects at the center of rotation O, thereby dividing the plane into four quadrants as shown in Figure 7 . In this first embodiment, as coil 10 extends from its first end to its second end, it sequentially passes through quadrants II, III, IV, I, II, and III, forming a winding structure with 1.5 turns. In other words, coil 10 in this first embodiment rotates and extends counterclockwise in Figure 7 to form a winding structure with 1.5 turns.

[0091] As shown in FIG7 , in this first embodiment, a total of three curved portions 11 are provided from the first end to the second end of the coil 10. The first curved portion 11 is located near the first end of the coil 10, the third curved portion 11 is located near the second end of the coil 10, and the second curved portion 11 is located between the first and second curved portions 11. Furthermore, the first and third curved portions 11 are both located in quadrants II and III to the left of the first imaginary straight line D1 in FIG7 , while the second curved portion 11 is located in quadrants I and IV to the right of FIG7 . In other words, from the first end to the second end of the coil 10, two adjacent curved portions 11 are located on either side of the first imaginary straight line D1.

[0092] In the three arc-shaped portions 11 of this embodiment, each arc-shaped portion 11 includes a first deformable segment 111, an arc segment 113, and a second deformable segment 112, which are sequentially connected in a counterclockwise direction. Because the three arc-shaped portions 11 are spaced apart in a counterclockwise direction, as shown in FIG7 , the first deformable segments 111 and the second deformable segments 112 are alternately spaced from the first end to the second end of the coil 10. Furthermore, in the first and second arc-shaped portions 111, the first deformable segment 111 and the arc segment 113 are located in quadrant II, while the second deformable segment 112 is located in quadrant III. Conversely, in the second arc-shaped portion 11, the first deformable segment 111 and the arc segment 113 are located in quadrant IV, while the second deformable segment 112 is located in quadrant I. In other words, the first deformable segment 111 and the second deformable segment 112 on the same arc-shaped portion 11 are located on opposite sides of the second virtual straight line D2.

[0093] As shown in the first embodiment of FIG7 , on the plane where the coil 10 is located, the first deformation segment 111 located in the second and fourth quadrants protrudes in a direction away from the center of rotation O, while the second deformation segment 112 located in the first and third quadrants retracts in a direction close to the center of rotation O.

[0094] Furthermore, on the same arc-shaped portion 11, the protruding distance of the first deformation section 111 is H1, the retracted distance of the second deformation section 112 is H2, the diameter of the wafer to be processed is φ, the value range of H1 / φ is 0.005 to 0.1, and the value range of H2 / φ is 0.005 to 0.1. In this embodiment, the diameter φ of the wafer to be processed is 300 mm, so the value range of H1 is 2 mm to 24 mm, and the value range of H2 is 2 mm to 24 mm. Within this range, a certain compensation effect can be obtained, making the process rate (such as the etching rate) relatively uniform. Preferably, the value range of H1 is 2 mm to 12 mm, and the value range of H2 is 2 mm to 12 mm. Within this range, a good compensation effect can be obtained, and the process rate is more uniform.

[0095] Taking the second arc portion 11 on the right side of the first virtual straight line D1 in Figure 7 as an example, ideally, the arc portion 11 should form two fan-shaped structures of equal area in the first and second quadrants of Figure 7 with the arc segment 113 as the rotation radius R to ensure the uniformity of the generated plasma density. However, in reality, in order to avoid the terminal, the connecting portion 12 connected to the end of the arc portion 11 in the fourth quadrant is actually gradually retracted inward along the clockwise extension direction, which will cause the area of ​​the fan enclosed by the arc portion 11 and the first virtual straight line D1 and the second virtual straight line D2 in the fourth quadrant to decrease, while the connecting portion 12 connected to the end of the arc portion 11 in the first quadrant is actually gradually expanded outward along the counterclockwise extension direction, which will cause the area of ​​the fan enclosed by the arc portion 11 and the first virtual straight line D1 and the second virtual straight line D2 in the first quadrant to increase, resulting in unequal areas of the two sectors.

[0096] According to the formula (L is the inductance, ψ is the magnetic flux, I is the current passing through the coil 10, B is the electric field strength, and S is the area enclosed by the coil 10) It can be seen that the inductance L is proportional to the area S of the coil 10.

[0097] It is precisely because the areas enclosed by the coil 10 in the first quadrant and the fourth quadrant are not equal, which leads to unequal inductance and plasma density, and ultimately leads to inconsistent etching rates and uneven etching.

[0098] In this application, by providing a first deformable segment 111 protruding away from the center of rotation O in quadrant IV, the area of ​​the sector enclosed by the deformed first deformable segment 111, the arc segment 113, the first virtual straight line D1, and the second virtual straight line D2 in quadrant IV is increased, thereby reducing the area change caused by deformation of the corresponding connecting portion 12. Furthermore, by providing a second deformable segment 112 retracting inward toward the center of rotation O in quadrant I, the area enclosed by the deformed second deformable segment 112, the first virtual straight line D1, and the second virtual straight line D2 in quadrant I is reduced, thereby reducing the area change caused by deformation of the corresponding connecting portion 12. Similarly, the situation of the coil 10 in quadrant II is the same as that in quadrant IV, and the situation in quadrant III is also the same as that in quadrant I, so these details will not be repeated.

[0099] It can be seen that the coil 10 of the present application, by providing the first deformable section 111 and the second deformable section 112, can reduce the area change of the coil 10 caused by the connection portion 12 to avoid the terminal, thereby making the area within each quadrant closer, thereby making the distribution of plasma density more uniform, and ultimately making the overall etching rate more uniform. In other words, by changing the shape of the coil 10, the plasma density in quadrants I and III is reduced, and the plasma density in quadrants II and IV is increased. As the plasma density changes, the etching rate in quadrants I and III decreases, and the etching rate in quadrants II and IV increases. The overall plasma density on the wafer surface is more uniform, the "butterfly" eccentricity map is improved, and the uniformity of overall wafer etching is improved.

[0100] As shown in Figure 7, the first deformation segment 111 is arc-shaped, and the vertices of all first deformation segments 111 are located on the third virtual straight line D3 passing through the center of rotation O; the second deformation segment 112 is arc-shaped, and the vertices of all second deformation segments 112 are located on the fourth virtual straight line D4 passing through the center of rotation O.

[0101] In some embodiments, the third virtual straight line D3 is perpendicular to the fourth virtual straight line D4.

[0102] In some embodiments, in order to further improve the uniformity of the etching rate, the third virtual straight line D3 forms an angle A with the first virtual straight line D1 , and A satisfies: 20°≤A≤40°.

[0103] In some embodiments, in order to further improve the uniformity of the etching rate, the fourth virtual straight line D4 forms an angle B with the first virtual straight line D1 , and B satisfies: 50°≤B≤70°.

[0104] As shown in FIG8 , embodiment 1 of the present application further discloses a coil assembly for exciting plasma, which is suitable for semiconductor process equipment and includes a plurality of the aforementioned coils 10 , wherein the plurality of coils 10 are evenly distributed circumferentially with the rotation center O as the deflection center.

[0105] Specifically, as shown in FIG8 , in this first embodiment, the coil assembly includes two coils 10 . The two coils 10 are deflected around the rotation center O, and the deflection angle of the two coils 10 is 180°. In other words, the two coils 10 form a centrosymmetric structure around the rotation center O.

[0106] As can be seen, in the first embodiment shown in FIG8 , each coil 10 is arranged on a plane in a rotationally extended manner. Each coil 10 includes multiple arcuate portions 11 and multiple connecting portions 12. The arcuate portions 11 and connecting portions 12 are arranged around the rotation center O of the coil 10, and the multiple arcuate portions 11 are connected by the connecting portions 12. A pair of mutually symmetrical arcuate portions 11 in the two coils 10 form a substantially circular shape, and all the arcuate portions 11 form a plurality of substantially circular shapes spaced apart from each other from the inside out.

[0107] The arc-shaped portion 11 includes a deformable segment, which is used to change the shape of the induced electromagnetic field generated by the coil 10 enclosed by the arc-shaped portion 11, thereby adjusting the distribution of the plasma generated by the induced electromagnetic field. In other words, the above embodiment changes the shape of the induced electromagnetic field generated by the coil 10 by providing the deformable segment, thereby offsetting the electromagnetic field changes caused by the connection portion 12 avoiding the terminal, thereby adjusting the distribution of the plasma generated by the induced electromagnetic field and achieving a more uniform etching rate.

[0108] As shown in Figure 8 , each coil 10 has a first end and a second end. Arc-shaped portions 11 are distributed sequentially from the first end to the second end of the coil 10, and the radius of gyration R of the arc-shaped portions 11 gradually increases. The arc-shaped portion 11 includes a first deformable segment 111, an arc segment 113, and a second deformable segment 112. The first deformable segment 111 and the second deformable segment 112 are located on the same arc-shaped portion 11. The maximum distance from the first deformable segment 111 to the center of gyration O is greater than the radius of gyration R of the arc-shaped portion 11. The maximum distance from the second deformable segment 112 to the center of gyration O is less than the radius of gyration R of the arc-shaped portion 11.

[0109] The coil 10 of the present application is provided with a first deformation segment 111 and a second deformation segment 112 on the arc portion 11, so that the maximum distance from the first deformation segment 111 to the rotation center O is greater than the rotation radius R of the arc portion 11 where it is located, and the maximum distance from the second deformation segment 112 to the rotation center O is less than the rotation radius R of the arc portion 11 where it is located. This is equivalent to adjusting the corresponding area in the circumferential direction of the area enclosed by the coil 10, thereby offsetting the area difference caused by the coil 10 avoiding the terminal, thereby making the plasma density distribution in the area above the wafer more uniform, thereby greatly improving the process uniformity in the radial direction of the wafer and improving the process quality.

[0110] It can be understood that the first deformation segment 111, the arc segment 113 and the second deformation segment 112 are connected in sequence, the center of the circle where the arc segment 113 is located is the rotation center O, and the rotation radius R of the arc portion 11 is the distance from the arc segment 113 to the rotation center O.

[0111] As shown in Figure 8, the plane on which coil 10 is located has a first virtual straight line D1 and a second virtual straight line D2 that are perpendicular to each other. First virtual straight line D1 and second virtual straight line D2 intersect at the rotation center O, thereby dividing the plane into four quadrants. Coil 10 rotates and extends in a counterclockwise direction to form a winding structure with 1.5 turns.

[0112] It should be noted that, in the above embodiment, the coil 10 has 1.5 turns, but this is not restrictive. In some other embodiments not shown in the figures, the coil 10 may also have 1 turn, 2 turns, 2.5 turns, etc.

[0113] As shown in Figure 8, the first end and the second end of each coil 10 are located on the first virtual straight line D1, and the first end and the second end of each coil 10 are respectively located on both sides of the second virtual straight line D2; from the first end to the second end of the coil 10, the two adjacent arc-shaped portions 11 are respectively located on both sides of the first virtual straight line D1; the first deformation segment 111 and the second deformation segment 112 are located on the same arc-shaped portion 11, and the first deformation segment 111 and the second deformation segment 112 on the same arc-shaped portion 11 are respectively located on both sides of the second virtual straight line D2.

[0114] The first deformed segment 111 is arc-shaped. As shown in FIG8 , the vertices of all first deformed segments 111 of the two coils 10 are fitted to form a third virtual straight line D3 passing through the center of rotation O. The second deformed segment 112 is arc-shaped, and the vertices of all second deformed segments 112 are fitted to form a fourth virtual straight line D4 passing through the center of rotation O. The third virtual straight line D3 is perpendicular to the fourth virtual straight line D4.

[0115] It should be noted that in embodiment 1 as shown in Figure 8, two coils 10 constitute the inner coil of the upper electrode. Therefore, the maximum turning radius R of the coil 10 is smaller than the radius of the wafer to be processed. From the first end to the second end of the coil 10, multiple first deformation segments 111 and multiple second deformation segments 112 are distributed alternately in sequence.

[0116] In some embodiments, the third virtual straight line D3 forms an angle A with the first virtual straight line D1 , and A satisfies: 20°≤A≤40°.

[0117] In some embodiments, the fourth virtual straight line D4 forms an angle B with the first virtual straight line D1 , and B satisfies: 50°≤B≤70°.

[0118] It should be noted that in the above-mentioned first embodiment, the coil 10 is used to be mounted on the inner coil of the upper electrode. That is, the maximum area enclosed by the coil 10 is smaller than the area of ​​the wafer. When the coil 10 is an inner coil, the maximum area enclosed by the coil 10 refers to the area enclosed by the outer circumference of the coil 10. However, this is not restrictive. In the second embodiment shown in Figure 9, the coil 10 can also be the outer coil of the upper electrode. That is, the minimum area enclosed by the coil 10 is larger than the area of ​​the wafer. When the coil 10 is an outer coil, the minimum area enclosed by the coil 10 refers to the area enclosed by the inner circumference of the coil 10.

[0119] The solution of this application is described in detail below with reference to the specific embodiment 2:

[0120] As shown in Figure 9 , in the second embodiment, the coil 10 is substantially identical to that in the first embodiment, except that the first deformable segment 111 and the second deformable segment 112 are positioned differently in this embodiment. As shown in Figure 9 , each arcuate portion 11 includes a second deformable segment 112, an arcuate segment 113, and a first deformable segment 111, which are sequentially connected in a counterclockwise direction. Therefore, in the second embodiment, the second deformable segment 112 and the arcuate segment 113 of the first arcuate portion 11, as well as the second deformable segment 112 and the arcuate segment 113 of the third arcuate portion 11, are located in quadrant II, while the first deformable segment 111 of the first arcuate portion 11 is located in quadrant III. The second deformable segment 112 and the arcuate segment 113 of the second arcuate portion 11 are located in quadrant IV, while the first deformable segment 111 of the second arcuate portion 11 is located in quadrant I. In other words, in the second embodiment, although the first deformable segment 111 and the second deformable segment 112 of the same arcuate portion 11 are located on opposite sides of the second virtual line D2, the distribution is opposite to that in the first embodiment.

[0121] Taking the second arc portion 11 on the right side of the first virtual straight line D1 as an example, ideally, the arc portion 11 should form two fan-shaped structures of equal area in the first quadrant and the fourth quadrant on the right side of the first virtual straight line D1 in FIG9 with the arc segment 113 as the radius of gyration R, respectively, to ensure the uniformity of the generated plasma density. However, in reality, in order to avoid the terminal, the connecting portion 12 connected to the end of the arc portion 11 in the fourth quadrant is actually gradually retracted inward along the clockwise extension direction, which will cause the area of ​​the fan enclosed by the arc portion 11 and the first virtual straight line D1 and the second virtual straight line D2 in the fourth quadrant to decrease, while the connecting portion 12 connected to the end of the arc portion 11 in the first quadrant is actually gradually expanded outward along the counterclockwise extension direction, which will cause the area of ​​the fan enclosed by the arc portion 11 and the first virtual straight line D1 and the second virtual straight line D2 in the first quadrant to increase, resulting in unequal areas of the two fans.

[0122] According to the formula (L is the inductance, ψ is the magnetic flux, I is the current passing through the coil 10, B is the electric field strength, and S is the area enclosed by the coil 10) It can be seen that the inductance L is proportional to the area S of the coil 10.

[0123] It is precisely because the areas enclosed by the coil 10 in the first quadrant and the fourth quadrant are not equal, which leads to unequal inductance and plasma density, and ultimately leads to inconsistent etching rates and uneven etching.

[0124] The coil of the present application has a second deformation segment 112, an arc segment 113 and a first deformation segment 111 connected in sequence in a counterclockwise direction, so that the maximum distance from the first deformation segment 111 to the rotation center O is greater than the rotation radius R of the arc portion 11 where it is located, and the maximum distance from the second deformation segment 112 to the rotation center O is less than the rotation radius R of the arc portion 11 where it is located. This is equivalent to adjusting the area enclosed by the coil 10, thereby offsetting the area difference caused by the coil 10 avoiding the terminal, thereby making the plasma density distribution in the area above the wafer more uniform, thereby greatly improving the process uniformity in the radial direction of the wafer and improving the process quality.

[0125] It should be emphasized that in the second embodiment, the minimum area of ​​the coil 10 is greater than the area of ​​the wafer, that is, the coil 10 of the second embodiment is an external coil, and the minimum area enclosed by the coil 10 when it is an external coil refers to the area enclosed by the inner circumference of the coil 10. Therefore, when the minimum area of ​​the coil 10 is greater than the area of ​​the wafer, the coil 10 is located outside the positive projection of the wafer on the plane. This results in that when setting the first deformation section 111 and the second deformation section 112, it is necessary to consider not only the influence of the area enclosed by the coil 10, but also the distance between the coil 10 and the edge of the wafer.

[0126] According to experimental data, when the diameter of the wafer to be processed is 300 mm, when the first deformation section 111 is set in the first quadrant, the etching rate at the position corresponding to the first deformation section 111 in the first quadrant is reduced compared with the standard coil in the prior art; and if the first deformation section 111 in the first quadrant is changed to the second deformation section 112, the etching rate at the corresponding position in the first quadrant is increased compared with the standard coil in the prior art.

[0127] This is because, in the first quadrant, a first deformation segment 111 is provided that protrudes in a direction away from the rotation center O, so that in the first quadrant, the fan-shaped area enclosed by the deformed first deformation segment 111, the arc segment 113, the first virtual straight line D1 and the second virtual straight line D2 is expanded. Although the inductance strength increases, the distance between the edge of the first deformation segment 111 and the edge of the wafer increases due to the outward expansion, and the plasma density reaching the wafer surface is actually reduced, so the etching rate will also decrease; correspondingly, if a second deformation segment 112 is provided in a direction that shrinks inward toward the rotation center O in the first quadrant, so that in the first quadrant, the area enclosed by the deformed second deformation segment 112 and the first virtual straight line D1 and the second virtual straight line D2 is reduced, although the inductance strength is reduced, the distance between the edge of the second deformation segment 112 and the edge of the wafer is reduced due to the inward compression, so the plasma density reaching the wafer surface is increased, so the etching rate will also increase.

[0128] That is, when the minimum area of ​​coil 10 (the area enclosed by the inner circumference of coil 10) is greater than the area of ​​the wafer, that is, when coil 10 is an outer coil, the etching rate at the corresponding location can be reduced by providing first deforming section 111, while the etching rate at the corresponding location can be increased by providing second deforming section 112. Therefore, in this embodiment, first deforming section 111 is provided in quadrants I and III, and second deforming section 112 is provided in quadrants II and IV.

[0129] As shown in FIG9 , in this embodiment, by providing a first deformable section 111 in quadrant I, the etching rate in quadrant I can be reduced; by providing a second deformable section 112 in quadrant IV, the etching rate in quadrant IV can be increased. Similarly, the condition of coil 10 in quadrant II is the same as that in quadrant IV, and the condition in quadrant III is the same as that in quadrant I, thereby making the overall etching rate more uniform.

[0130] It should also be noted that experimental data shows that, when the diameter of the wafer to be processed is 300 mm, when H1 of the first deformed section 111 in quadrant I in FIG9 is 6 mm, the etching rate at the position corresponding to the first deformed section 111 in quadrant I is reduced compared to the standard coil in the prior art. When H1 is 12 mm, the etching rate at the position corresponding to the first deformed section 111 in quadrant I is further reduced, but the magnitude of the reduction in etching rate is reduced. When H1 is 15 mm, the etching rate at the position corresponding to the first deformed section 111 in quadrant I increases instead of decreasing. In other words, the range of the first deformed section 111 protruding away from the rotation center O is limited. Within this range, the effect of the distance between the first deformed section 111 and the wafer on the etching rate is greater than the effect of the area change caused by the first deformed section 111 on the etching rate. Beyond this range, the effect of the area change caused by the first deformed section 111 on the etching rate becomes dominant, thus causing the etching rate to increase instead of decrease.

[0131] Therefore, in the second embodiment, the value range of H1 / φ is 0.0067 to 0.05, and the value range of H2 / φ is 0.0067 to 0.05. In this embodiment, the diameter φ of the wafer to be processed is 300 mm. Therefore, the value range of H1 is 2 mm to 30 mm, and the value range of H2 is 2 mm to 30 mm. Preferably, the value range of H1 is 2 mm to 15 mm, and the value range of H2 is 2 mm to 15 mm. Within this range, a good compensation effect can be achieved, and the etching rate is more uniform.

[0132] As shown in Figure 9, in this second embodiment, similar to the first embodiment, the first deformation segment 111 is arc-shaped, and the vertices of all the first deformation segments 111 are located on the third virtual straight line D3 passing through the center of rotation O; the second deformation segment 112 is arc-shaped, and the vertices of all the second deformation segments 112 are located on the fourth virtual straight line D4 passing through the center of rotation O.

[0133] In some embodiments, the third virtual straight line D3 is perpendicular to the fourth virtual straight line D4.

[0134] The difference between the second embodiment and the first embodiment is that, in order to further improve the uniformity of the etching rate, in the present embodiment, the third virtual straight line D3 and the first virtual straight line D1 form an angle B, and B satisfies: 50°≤B≤70°.

[0135] In some embodiments, in order to further improve the uniformity of the etching rate, the fourth virtual straight line D4 forms an angle A with the first virtual straight line D1 , and A satisfies: 20°≤A≤40°.

[0136] As shown in Example 2 in Figure 10, the present application also discloses a coil assembly, whose structure is basically the same as the coil assembly in Example 1, except that, in this embodiment, two coils 10 form the outer coil of the upper electrode. Therefore, the minimum turning radius R of the coil 10 is greater than the radius of the wafer to be processed, and from the first end to the second end of the coil 10, multiple second deformation segments 112 and multiple first deformation segments 111 are alternately distributed in sequence.

[0137] In some embodiments, the third virtual straight line D3 forms an angle B with the first virtual straight line D1 , and B satisfies: 50°≤B≤70°.

[0138] In some embodiments, the fourth virtual straight line D4 forms an angle A with the first virtual straight line D1 , and A satisfies: 20°≤A≤40°.

[0139] The present application also discloses a coil device for exciting plasma, which is suitable for semiconductor process equipment and includes the above-mentioned coil assembly. There are at least two coil assemblies, and the at least two coil assemblies are spaced apart from the inside to the outside.

[0140] Specifically, as shown in Figure 11, the coil device includes the coil assembly of Example 1 and the coil assembly of Example 2. The coil assembly of Example 1 is located at the innermost side, i.e., the inner coil assembly, while the coil assembly of Example 2 is located at the outermost side, i.e., the outer coil assembly.

[0141] It can be understood that the maximum turning radius R of the coil 10 located at the innermost coil assembly is smaller than the radius of the wafer to be processed, and from the first end to the second end of the coil 10, multiple first deformation segments 111 and multiple second deformation segments 112 are alternately distributed in sequence.

[0142] The minimum turning radius R of the coil 10 of the outermost coil assembly is larger than the radius of the wafer to be processed. From the first end to the second end of the coil 10 , the plurality of second deformation segments 112 and the plurality of first deformation segments 111 are alternately distributed.

[0143] The first deformation segment 111 and the second deformation segment 112 are both arc-shaped; the vertices of all the first deformation segments 111 on the innermost coil assembly are located on the third virtual straight line D3 passing through the center of rotation O; the vertices of all the second deformation segments 112 on the outermost coil assembly are located on the fifth virtual straight line D5 passing through the center of rotation O; the third virtual straight line D3 coincides with the fifth virtual straight line D5.

[0144] The first deformation segment 111 and the second deformation segment 112 are both arc-shaped; the vertices of all the second deformation segments 112 on the innermost coil assembly are located on the fourth virtual straight line D4 passing through the center of rotation O; the vertices of all the first deformation segments 111 on the outermost coil assembly are located on the sixth virtual straight line passing through the center of rotation O; the fourth virtual straight line D4 coincides with the sixth virtual straight line D6.

[0145] In other words, as shown in FIG11 , all first deformed segments 111 of the coil assembly (i.e., the inner coil assembly) in the first embodiment are located in quadrants II and IV, respectively, while all second deformed segments 112 of the coil assembly (i.e., the outer coil assembly) in the second embodiment are located in quadrants II and IV, respectively. Furthermore, the first deformed segments 111 of the inner coil assembly correspond to the second deformed segments 112 of the outer coil assembly, and the vertices of all first deformed segments 111 and second deformed segments 112 located in quadrants II and IV lie on the same virtual straight line. Accordingly, all second deformed segments 112 of the inner coil assembly are located in quadrants I and III, respectively, while all first deformed segments 111 of the outer coil assembly are located in quadrants I and III, respectively. Furthermore, the second deformed segments 112 of the inner coil assembly correspond to the first deformed segments 111 of the outer coil assembly, and the vertices of all first deformed segments 111 and second deformed segments 112 located in quadrants I and III lie on the same virtual straight line.

[0146] Figure 12 shows an etch rate graph of an inductively coupled plasma semiconductor process equipment employing the coil device of the present application, and Figure 13 shows an eccentricity data graph of an inductively coupled plasma semiconductor process equipment employing the coil device of the present application. The eccentricity data in Figure 13 show that compared to Figure 6 , the values ​​corresponding to quadrants I and III decrease, while the values ​​corresponding to quadrants II and IV increase. This significantly reduces the overall etch rate variance, improves overall wafer uniformity, and improves the butterfly-shaped map.

[0147] It can be seen that the coil 10 of the present application is provided with a first deformation segment 111 and a second deformation segment 112 on the arc portion 11, so that the maximum distance from the first deformation segment 111 to the rotation center O is greater than the rotation radius R of the arc portion 11 where it is located, and the maximum distance from the second deformation segment 112 to the rotation center O is less than the rotation radius R of the arc portion 11 where it is located. This is equivalent to adjusting the area enclosed by the coil 10, thereby offsetting the area difference caused by the coil 10 avoiding the terminal, thereby making the plasma density distribution in the area above the wafer more uniform, thereby greatly improving the process uniformity in the radial direction of the wafer and improving the process quality.

[0148] According to the present application, an inductively coupled plasma semiconductor process equipment is also disclosed, including a process chamber and the above-mentioned coil 10, or the above-mentioned coil assembly, or the above-mentioned coil device, so as to excite the gas in the process chamber into plasma.

[0149] It is understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the present application, and the present application is not limited thereto. Those skilled in the art may make various modifications and improvements without departing from the spirit and substance of the present application, and such modifications and improvements are also considered to be within the scope of protection of the present application.

Claims

1. A coil for exciting plasma, suitable for semiconductor process equipment, characterized in that: The coil is arranged on a plane in a rotationally extended manner, The coil comprises a plurality of arc-shaped portions and a plurality of connecting portions, wherein the arc-shaped portions and the connecting portions are arranged around the rotation center of the coil, and adjacent arc-shaped portions are connected via the connecting portions; The coil has a first end and a second end, and from the first end to the second end of the coil, the arc-shaped portion and the connecting portion are alternately distributed in sequence and the turning radius of the arc-shaped portion gradually increases; At least one of the plurality of arc-shaped portions comprises a first deformation segment, an arc segment, and a second deformation segment connected in sequence, the first deformation segment and the second deformation segment are respectively connected to two ends of the arc segment, the center of the circle where the arc segment is located is the rotation center, and the rotation radius of the arc-shaped portion is the distance from the arc segment to the rotation center. The maximum distance from the first deformation section of the arc-shaped portion to the rotation center is greater than the rotation radius of the arc-shaped portion; The maximum distance from the second deformation section of the arc-shaped portion to the rotation center is smaller than the rotation radius of the arc-shaped portion.

2. The coil according to claim 1, characterized in that On the plane, the first deformation segment protrudes in a direction away from the rotation center relative to the circle where the arc segment is located, and the second deformation segment retracts in a direction close to the rotation center relative to the circle where the arc segment is located.

3. The coil according to claim 1, characterized in that From the first end to the second end of the coil, the first deformation segments and the second deformation segments are alternately arranged.

4. The coil according to claim 1, characterized in that The first end and the second end of the coil are both located on a first virtual straight line, The first end and the second end of the coil are respectively located on both sides of a second virtual straight line. The pseudo straight line is perpendicular to the first virtual straight line and intersects at the rotation center.

5. The coil according to claim 4, characterized in that From the first end to the second end of the coil, two adjacent arc-shaped portions are respectively located on both sides of the first virtual straight line; The first deformation section and the second deformation section on the same arc-shaped portion are respectively located on two sides of the second virtual straight line.

6. The coil according to claim 4, characterized in that From the first end to the second end of the coil, a plurality of the first deformation segments and a plurality of the second deformation segments are alternately distributed in sequence.

7. The coil according to claim 4, characterized in that The first deformation segment is arc-shaped, and all vertices of the first deformation segment are located on a third virtual straight line passing through the rotation center; The second deformation segment is arc-shaped, and all vertices of the second deformation segment are located on a fourth virtual straight line passing through the rotation center.

8. The coil according to claim 7, characterized in that The third virtual straight line is perpendicular to the fourth virtual straight line; or The angle formed by the third virtual straight line and the first virtual straight line is in a range of 20° to 40°; or The angle formed by the fourth virtual straight line and the first virtual straight line is in a range of 20° to 40°; or The angle formed by the third virtual straight line and the first virtual straight line is in a range of 50° to 70°; or The angle formed by the fourth virtual straight line and the first virtual straight line ranges from 50° to 70°.

9. The coil according to claim 2, characterized in that The diameter of the wafer to be processed is φ. On the same arc portion, the protruding distance of the first deformation section is H1. The value range of H1 / φ is 0.005 to 0.1; or The value range of H1 / φ is 0.0067 to 0.

05.

10. The coil according to claim 2, characterized in that The diameter of the wafer to be processed is φ. On the same arc portion, the retracted distance of the second deformation section is H2. The value of H2 / φ ranges from 0.005 to 0.1; or The value range of H2 / φ is 0.0067 to 0.

05.

11. A coil for exciting plasma, suitable for semiconductor process equipment, characterized in that: The coil is arranged on a plane in a rotationally extended manner, the coil comprises a plurality of arc-shaped portions and a plurality of connecting portions, the arc-shaped portions and the connecting portions are arranged around the rotation center of the coil, and the plurality of arc-shaped portions are connected through the connecting portions; The arc-shaped portion has a deformation section, and the deformation section is used to change the shape of the induced electromagnetic field generated by the coil surrounded by the arc-shaped portion, so as to adjust the distribution of plasma generated by the induced electromagnetic field.

12. The coil according to claim 11, characterized in that The coil has a first end and a second end. From the first end to the second end of the coil, the arc-shaped portions are distributed in sequence and the turning radius of the arc-shaped portions gradually increases.

13. The coil according to claim 12, characterized in that The deformation section comprises a first deformation section and a second deformation section, wherein the first deformation section and the second deformation section are located on the same arc-shaped portion; The maximum distance from the first deformation section to the rotation center is greater than the rotation radius of the arc-shaped portion where the first deformation section is located; The maximum distance from the second deformation section to the rotation center is smaller than the arc portion where it is located. Radius of gyration.

14. The coil according to claim 13, characterized in that The arc portion also has an arc segment, the first deformation segment and the second deformation segment are respectively connected to the two ends of the arc segment, the center of the circle where the arc segment is located is the rotation center, and the rotation radius of the arc portion is the distance from the arc segment to the rotation center.

15. The coil according to claim 13, characterized in that The first end and the second end of the coil are both located on a first virtual straight line, The first end and the second end of the coil are respectively located on both sides of a second virtual straight line, and the second virtual straight line is perpendicular to the first virtual straight line and intersects at the rotation center; From the first end to the second end of the coil, two adjacent arc-shaped portions are respectively located on both sides of the first virtual straight line; The first deformation section and the second deformation section on the same arc-shaped portion are respectively located on two sides of the second virtual straight line.

16. The coil according to claim 15, characterized in that The first deformation segment is arc-shaped, and all vertices of the first deformation segment are located on a third virtual straight line passing through the rotation center; The second deformation segment is arc-shaped, and all vertices of the second deformation segment are located on a fourth virtual straight line passing through the rotation center.

17. The coil according to claim 16, characterized in that The third virtual straight line is perpendicular to the fourth virtual straight line.

18. The coil according to claim 16, characterized in that The maximum turning radius of the coil is smaller than the radius of the wafer to be processed. From the first end to the second end of the coil, a plurality of the first deformation segments and a plurality of the second deformation segments are alternately distributed in sequence.

19. The coil according to claim 18, characterized in that The angle formed by the third virtual straight line and the first virtual straight line is in a range of 20° to 40°; or The angle formed by the fourth virtual straight line and the first virtual straight line ranges from 50° to 70°.

20. The coil according to claim 16, characterized in that The minimum turning radius of the coil is greater than the radius of the wafer to be processed. From the first end to the second end of the coil, a plurality of the second deformation segments and a plurality of the first deformation segments are alternately distributed in sequence.

21. The coil according to claim 20, characterized in that The angle formed by the third virtual straight line and the first virtual straight line is in a range of 50° to 70°; or The angle formed by the fourth virtual straight line and the first virtual straight line ranges from 20° to 40°.

22. A coil assembly for exciting plasma, suitable for semiconductor process equipment, characterized in that: The method comprises a plurality of coils according to any one of claims 1 to 21, wherein the plurality of coils are evenly distributed in the circumferential direction with the rotation center as the deflection center.

23. A coil device for exciting plasma, suitable for semiconductor process equipment, characterized in that: The invention comprises the coil assembly as claimed in claim 22, wherein there are at least two coil assemblies, and the at least two coil assemblies are spaced apart from the inside to the outside.

24. The coil device according to claim 23, characterized in that The maximum turning radius of the coil of the innermost coil assembly is smaller than the radius of the wafer to be processed, and from the first end to the second end of the coil, a plurality of the first deformation segments and a plurality of the second deformation segments are alternately distributed in sequence; The minimum turning radius of the coil of the outermost coil assembly is greater than the half radius of the wafer to be processed. The coil has a diameter, and from the first end to the second end of the coil, a plurality of the second deformation segments and a plurality of the first deformation segments are alternately distributed in sequence.

25. The coil device according to claim 24, characterized in that The first deformation section and the second deformation section are both arc-shaped; The vertices of all the first deformation segments on the innermost coil assembly are located on a third virtual straight line passing through the rotation center; The vertices of all the second deformation segments on the outermost coil assembly are located on a fifth virtual straight line passing through the rotation center; The third virtual straight line coincides with the fifth virtual straight line.

26. The coil device according to claim 25, characterized in that The first deformation section and the second deformation section are both arc-shaped; The vertices of all the second deformation segments on the innermost coil assembly are located on a fourth virtual straight line passing through the rotation center; The vertices of all the first deformation segments on the outermost coil assembly are located on a sixth virtual straight line passing through the rotation center; The fourth virtual straight line coincides with the sixth virtual straight line.

27. An inductively coupled plasma semiconductor process equipment, characterized in that: The invention comprises a process chamber and the coil according to any one of claims 1 to 21, or the coil assembly according to claim 22, or the coil device according to any one of claims 23 to 26, so as to excite the gas in the process chamber into plasma.

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