Surface light-emitting element and manufacturing method for surface light-emitting element

Abstract

The purpose of the present invention is to provide a surface light-emitting element capable of suppressing restriction of a current path to an oxide constriction layer from an electrode provided on a light-emitting element part.　This surface light-emitting element according to the present technology comprises a light-emitting element part including: a first structure that includes a first semiconductor structure; a second structure that includes a second semiconductor structure laminated with the first structure; a light-emitting layer arranged between the first and second structures; and an oxide constriction layer provided inside the first structure and / or inside the second structure, and in the provided surface light-emitting element, on a surface of the light-emitting element part on the second structure side, provided are a circular first defect part, the first defect part being provided with a solid layer and / or a gas layer, and a second defect part which surrounds the first defect part at least in the plan view, the second defect part being provided with a solid layer and / or a gas layer.

Description

Surface light emitting device and method for manufacturing the surface light emitting device

[0001] The technology according to the present disclosure (hereinafter also referred to as "the technology") relates to a surface light emitting device and a method for manufacturing the surface light emitting device.

[0002] 2. Description of the Related Art Conventionally, surface-emitting devices capable of obtaining surface-emitting output, such as surface-emitting lasers and light-emitting diodes, are known.

[0003] Among conventional surface light emitting devices, there are some that have an oxide constriction layer in the light emitting device portion (see, for example, Patent Document 1).

[0004] JP 2009-99668 A

[0005] However, in conventional surface light emitting elements, there is room for improvement in terms of preventing the current path from being restricted from the electrode provided on the light emitting element portion to the oxide constriction layer.

[0006] Therefore, a main object of the present technology is to provide a surface light emitting device that can suppress restriction of a current path from an electrode provided on a light emitting element portion to an oxide constriction layer.

[0007] The present technology provides a surface light emitting device comprising: a first structure including a first semiconductor structure; a second structure including a second semiconductor structure stacked on the first structure; a light emitting layer disposed between the first and second structures; and an oxide constriction layer provided within the first structure and / or the second structure, wherein a surface of the light emitting device component facing the second structure is provided with: a first circular defect portion, the first defect portion having a solid layer and / or a gas layer; and a second defect portion surrounding the first defect portion in at least a planar view, the second defect portion having a solid layer and / or a gas layer. The first defect portion may be a notch or a groove, and the second defect portion may include a notch and / or a groove. The bottom surface of the first defect portion may be located farther from the surface of the light emitting device component facing the first structure than the oxide constriction layer. The oxidized constriction layer may have a non-oxidized region and an oxidized region surrounding the non-oxidized region, and the first defect portion may surround the non-oxidized region in a planar view. A region of the light-emitting element portion on the inner periphery of the first defect portion may include another non-oxidized region having a larger diameter than the non-oxidized region. The oxidized constriction layer may be provided in the second structure, and a bottom surface of the first defect portion may be located in the second semiconductor structure. The oxidized constriction layer may be provided in the first structure, and a bottom surface of the first defect portion may be located in the second semiconductor structure or the first semiconductor structure. A region of the light-emitting element portion on the outer periphery of the first defect portion may include an oxidized region. The oxidized region may include an oxide containing Al. The other non-oxidized region may include a compound semiconductor containing Al. At least one of the first and second semiconductor structures may have a semiconductor multilayer film reflector, and the other non-oxidized region may include at least a portion of the semiconductor multilayer film reflector. An electrode may be provided on at least a region on the inner periphery of the first missing portion on the surface of the second semiconductor structure opposite to the light emitting layer side. The second semiconductor structure may have a contact layer in contact with the electrode on the side opposite to the light emitting layer side. The electrode may have an opening that serves as an emission port. An insulator may be provided in the first missing portion. An insulator may be provided in the second missing portion.The light-emitting element component may have a mesa including at least a portion of the first semiconductor structure, the light-emitting layer, the oxidized constriction layer, and the second semiconductor structure. The present technology also provides a method for manufacturing a surface-emitting element, including: generating a stacked body in which a first semiconductor structure, a light-emitting layer, and a second semiconductor structure are stacked in this order on a substrate, the stacked body having an oxidizable layer as an intermediate layer; forming a defect portion having a circumferential portion on a surface of the stacked body facing the second semiconductor structure; forming a circumferential groove on the surface, inner peripherally of the circumferential portion; and oxidizing the stacked body from a side. The groove-forming step may be formed so that the bottom surface of the groove is located farther from the surface of the stacked body facing the substrate than the oxidizable layer. The method may further include forming an electrode on at least a region of the inner peripheral side of the groove on the surface of the stacked body facing the second semiconductor structure.

[0008] FIG. 1 is a cross-sectional view of a surface light emitting device according to Example 1 of an embodiment of the present technology. FIG. 2 is a plan view of a surface light emitting device according to Example 1 of an embodiment of the present technology. FIG. 3 is a flowchart for describing an example of a manufacturing method of a surface light emitting device according to Example 1 of an embodiment of the present technology. FIG. 4 is a cross-sectional view of each process of an example of a manufacturing method of a surface light emitting device according to Example 1 of an embodiment of the present technology. FIG. 5 is a cross-sectional view of each process of an example of a manufacturing method of a surface light emitting device according to Example 1 of an embodiment of the present technology. FIG. 6 is a cross-sectional view of each process of an example of a manufacturing method of a surface light emitting device according to Example 1 of an embodiment of the present technology. FIG. 7 is a cross-sectional view of each process of an example of a manufacturing method of a surface light emitting device according to Example 1 of an embodiment of the present technology. FIG. 8 is a cross-sectional view of each process of an example of a manufacturing method of a surface light emitting device according to Example 1 of an embodiment of the present technology. FIG. 1 is a cross-sectional view of each step in an example of a manufacturing method of a surface light emitting device according to Example 1 of an embodiment of the present technology. FIG. 2 is a cross-sectional view of each step in an example of a manufacturing method of a surface light emitting device according to Example 1 of an embodiment of the present technology. FIG. 3 is a view for explaining an action of a surface light emitting device according to Example 1 of an embodiment of the present technology. FIG. 4 is a cross-sectional view of a surface light emitting device according to Comparative Example 1. FIG. 5 is a cross-sectional view of a surface light emitting device according to Comparative Example 2. FIG. 6 is a cross-sectional view of a surface light emitting device according to Example 2 of an embodiment of the present technology. FIG. 7 is a plan view of a surface light emitting device according to Example 2 of an embodiment of the present technology. FIG. 8 is a cross-sectional view of a surface light emitting device according to Example 3 of an embodiment of the present technology. FIG. 9 is a plan view of a surface light emitting device according to Example 4 of an embodiment of the present technology. FIG. 10 is a cross-sectional view of a surface light emitting device according to Example 5 of an embodiment of the present technology. FIG. 11 is a plan view of a surface light emitting device according to Example 5 of an embodiment of the present technology.FIG. 1 is a cross-sectional view of a surface light emitting device according to Example 6 of an embodiment of the present technology. FIG. 2 is a plan view of a surface light emitting device according to Example 6 of an embodiment of the present technology. FIG. 3 is a cross-sectional view of a surface light emitting device according to Example 7 of an embodiment of the present technology. FIG. 4 is a cross-sectional view of a surface light emitting device according to Example 8 of an embodiment of the present technology. FIG. 5 is a cross-sectional view of a surface light emitting device according to Example 9 of an embodiment of the present technology. FIG. 6 is a plan view of a surface light emitting device according to Example 9 of an embodiment of the present technology. FIG. 7 is a cross-sectional view of a surface light emitting device according to Example 10 of an embodiment of the present technology. FIG. 8 is a plan view of a surface light emitting device according to Example 10 of an embodiment of the present technology. FIG. 9 is a cross-sectional view of a surface light emitting device according to Example 11 of an embodiment of the present technology. FIG. 10 is a cross-sectional view of a surface light emitting device according to Example 11 of an embodiment of the present technology. FIG. 11 is a plan view of a surface light emitting device according to Example 12 of an embodiment of the present technology. FIG. 12 is a cross-sectional view of a surface light emitting device according to Example 13 of an embodiment of the present technology. FIG. 13 is a cross-sectional view of a surface light emitting device according to Example 14 of an embodiment of the present technology. FIG. 14 is a cross-sectional view of a surface light emitting device according to Example 15 of an embodiment of the present technology. FIG. 15 is a cross-sectional view of a surface light emitting device according to Comparative Example 3. FIG. 16 is a cross-sectional view of a surface light emitting device according to Variation 1 of Example 3 of an embodiment of the present technology. FIG. 17 is a cross-sectional view of a surface light emitting device according to Variation 2 of Fig. 1 is a cross-sectional view of a surface light emitting device according to a modified example of Example 1 of an embodiment of the present technology. Fig. 2 is a cross-sectional view of a surface light emitting device according to a modified example 1 of Example 7 of an embodiment of the present technology. Fig. 3 is a cross-sectional view of a surface light emitting device according to a modified example 2 of Example 7 of an embodiment of the present technology. Fig. 4 is a cross-sectional view of a surface light emitting device according to a modified example 3 of Example 7 of an embodiment of the present technology. Fig. 5 is a diagram showing an example of application of a surface light emitting device according to Example 1 of an embodiment of the present technology to a distance measurement device. Fig. 6 is a block diagram showing an example of a schematic configuration of a vehicle control system. Fig. 7 is an explanatory diagram showing an example of an installation position of a distance measurement device.

[0009] Preferred embodiments of the present technology will be described in detail below with reference to the accompanying drawings. Note that in this specification and the drawings, components having substantially the same functional configurations are denoted by the same reference numerals, and redundant description will be omitted. The embodiments described below are representative embodiments of the present technology, and the scope of the present technology should not be interpreted narrowly. Even when it is described in this specification that a surface light-emitting device and a method for manufacturing a surface light-emitting device according to the present technology have multiple effects, it is sufficient that the surface light-emitting device and a method for manufacturing a surface light-emitting device according to the present technology have at least one effect. The effects described in this specification are merely examples and are not limiting, and other effects may also be present.

[0010] The description will be made in the following order: 0. Introduction 1. Surface-emitting device according to Example 1 of an embodiment of the present technology 2. Surface-emitting device according to Example 2 of an embodiment of the present technology 3. Surface-emitting device according to Example 3 of an embodiment of the present technology 4. Surface-emitting device according to Example 4 of an embodiment of the present technology 5. Surface-emitting device according to Example 5 of an embodiment of the present technology 6. Surface-emitting device according to Example 6 of an embodiment of the present technology 7. Surface-emitting device according to Example 7 of an embodiment of the present technology 8. Surface-emitting device according to Example 8 of an embodiment of the present technology 9. Surface-emitting device according to Example 9 of an embodiment of the present technology 10. Surface-emitting device according to Example 10 of an embodiment of the present technology 11. Surface-emitting device according to Example 11 of an embodiment of the present technology 12. Surface-emitting device according to Example 12 of an embodiment of the present technology 13. Surface-emitting device according to Example 13 of an embodiment of the present technology 14. Surface-emitting device according to Example 14 of an embodiment of the present technology 15. Surface-emitting device according to Example 15 of an embodiment of the present technology 16. Modified example of the present technology 17. Application to electronic devices 18. Example of applying a surface light emitting device to a distance measurement device 19. Example of mounting a distance measurement device on a moving object

[0011] <0. Introduction>

[0012] For example, some surface-emitting devices having a DBR (Distributed Bragg Reflector), such as a VCSEL (Vertical Cavity Surface Emitting Laser) or an LED (Light Emitting Diode), have a light-emitting element portion having an oxidation constriction layer. For example, in a surface-emitting device C1 (a surface-emitting surface-emitting laser that emits light toward the front surface side of the substrate S) according to Comparative Example 1 shown in Fig. 18, when the oxidation constriction layer is formed, not only the high-Al-composition oxidized layer, which is the material of the oxidation constriction layer OCL, but also the side portions of the high-Al-composition layer (low-refractive index layer) of the DBR2 (upper DBR) are oxidized. In particular, when an oxidized region (dark gray region in FIG. 18 ) exists on the side of the DBR2 on which the ring-shaped electrode E2 (e.g., upper electrode) that defines the emission aperture is provided, even if the electrode E2 is provided on the DBR2 via the contact layer CL, the current flowing in from the electrode E2 flows laterally through the contact layer CL and then vertically toward the light-emitting layer AL. Because the current path from the electrode E2 to the oxidized constriction layer OCL via the contact layer CL is restricted in this way, smooth injection of carriers from the electrode E2 via the contact layer CL is hindered, which raises concerns about increases in electrical resistance and driving voltage.

[0013] Therefore, for example, in the surface-emitting device C2 (surface-emitting surface-emitting laser) according to Comparative Example 2 shown in Fig. 19, the ring-shaped electrode E2 defining the emission aperture has a small inner diameter so as to overlap with a part of the non-oxidized region (central region) of the DBR2. In this case, however, there is a problem that the oscillating beam is vignetted by the electrode E2. In particular, when the inner diameter of the oxidized region of the oxidized constriction layer OCL is reduced to obtain high luminous efficiency (when the oxidation distance of the oxidized layer is lengthened), the inner diameter of the oxidized region of the DBR2 also inevitably becomes small (the diameter of the non-oxidized region becomes small), which causes a more serious problem. Note that in Figs. 18 and 19, the electrode E1 is the lower electrode, and the DBR1 is the lower DBR.

[0014] In a back-emitting surface-emitting laser that emits light to the back side of the substrate, there is no problem of beam vignetting by the electrodes as in the case of surface-emitting element C2 in Comparative Example 2. However, a reduction in the non-oxidized region (central region) that overlaps with the upper electrode essentially corresponds to a reduction in the electrode area (see FIG. 42), which limits the current path from the upper electrode to the oxidized constriction layer, raising concerns about increased electrical resistance and driving voltage.

[0015] Therefore, after extensive research, the inventors have developed a surface light emitting device according to the present technology, which is a surface light emitting device that can prevent the current path from the electrode provided on the light emitting element portion to the oxidized constriction layer from being restricted.

[0016] Hereinafter, several examples of an embodiment of a surface light emitting device according to the present technology will be described in detail with reference to the drawings. In the following, in cross-sectional views such as Fig. 1, the upper side will be referred to as "upper" and the lower side will be referred to as "lower" as appropriate.

[0017] 1. Surface light emitting device according to Example 1 of an embodiment of the present technology> Fig. 1 is a cross-sectional view of a surface light emitting device 10 according to Example 1 of an embodiment of the present technology. Fig. 2 is a plan view (top view) of the surface light emitting device 10 according to Example 1 of an embodiment of the present technology. Fig. 1 is a cross-sectional view taken along line 1-1 in Fig. 2.

[0018] <Configuration of Surface Light Emitting Device> (Overall Configuration) A surface light emitting device 10 according to Example 1 of an embodiment of the present technology is, for example, a vertical cavity surface emitting laser (VCSEL) as shown in Figures 1 and 2. The surface light emitting device 10 is, for example, a surface emission type VCSEL. The surface light emitting device 10 is, for example, a VCSEL for optical communication.

[0019] The surface light emitting element 10 is driven by, for example, a driver (drive circuit), which includes, for example, a power supply and a transistor that controls the on / off of the power supply to the surface light emitting element 10.

[0020] The surface light emitting element 10 has, for example, a light emitting element portion LE and a dummy element portion DE arranged in an in-plane direction.

[0021] The light-emitting element section LE includes, for example, a first structure ST1 including a first semiconductor structure SS1, a second structure ST2 including a second semiconductor structure SS2 stacked on the first structure ST1, a light-emitting layer 103 disposed between the first and second structures ST1 and ST2, and an oxide constriction layer 104 provided in the second structure ST2. The dummy element section DE has a layer configuration generally similar to that of the light-emitting element section LE.

[0022] As an example, the first structure ST1 further includes a substrate 101 arranged on the side (lower side) opposite to the light emitting layer 103 side of the first semiconductor structure SS1. The surface light emitting element 10 emits laser light to the side (surface side (upper surface side) of the substrate 101) opposite to the light emitting layer 103 side of the second structure ST2. Hereinafter, the direction (vertical direction) in which the first and second structures ST1 and ST2 are stacked will also be referred to as the "stacking direction."

[0023] The first semiconductor structure SS1 includes, for example, a first semiconductor multilayer film reflector 102.

[0024] The second semiconductor structure SS2 includes, for example, a second semiconductor multilayer reflector 105 and a contact layer 106. The contact layer 106 is a semiconductor layer in contact with an anode electrode 107 (p-side electrode), and is disposed on the opposite side (upper side) of the second semiconductor multilayer reflector 105 from the light emitting layer 103 side. The contact layer 106 is covered with an insulating film 108 except for the portion in contact with the anode electrode 107. The second semiconductor multilayer reflector 105 has a different conductivity type from the first semiconductor multilayer reflector 102.

[0025] As an example, the oxide constriction layer 104 is disposed in the second semiconductor multilayer film reflector 105. The oxide constriction layer 104 defines a light emitting area LA of the light emitting layer 103. The light emitting area LA is a region in the light emitting layer 103 into which a current is injected (current injection region) and which emits light.

[0026] As described above, in the surface-emitting device 10, as an example, a first semiconductor multilayer reflector 102, a light-emitting layer 103, a second semiconductor multilayer reflector 105 having an oxide constriction layer 104 therein, and a contact layer 106 are stacked in this order on a substrate 101.

[0027] As an example, both the light-emitting element portion LE and the dummy element portion DE include a mesa. The mesa of the light-emitting element portion LE is also called a light-emitting mesa. The mesa of the dummy element portion DE is also called a dummy mesa. Here, the light-emitting mesa includes at least a portion (e.g., an upper portion) of the first semiconductor structure SS1, the light-emitting layer 103, the oxide constriction layer 104, and the second semiconductor structure SS2. Here, the shape of the light-emitting mesa in a planar view is circular (see FIG. 2), but is not limited to this and may be other shapes such as an ellipse or a polygon. The diameter of the light-emitting mesa is, for example, 20 μm to 30 μm.

[0028] In the surface-emitting device 10, the light-emitting layer 103 has a double hetero structure sandwiched in the stacking direction between first and second semiconductor multilayer film reflectors 102 and 105 of different conductivity types, and holes and electrons can be radiatively recombined (radiatively recombined) in the light-emitting layer 103.

[0029] In the surface light emitting device 10, a resonator is configured including the light emitting layer 103 and the first and second semiconductor multilayer film reflectors 102 and 105 that sandwich the light emitting layer 103 in the stacking direction.

[0030] The anode electrode 107 is provided in a circumferential shape (for example, a ring shape) on the contact layer 106 in plan view so as to surround the light emitting area LA of the light emitting layer 103. The anode electrode 107 has an opening 107a which serves as a light exit port.

[0031] As an example, an electrode pad 111 is provided on the contact layer 106 of the dummy element portion DE. The electrode pad 111 is, for example, an electrode for connection to the anode side of a driver. The electrode pad 111 is connected to the anode electrode 107 via an anode wiring 112. Here, the electrode pad 111 has a circular shape in a plan view, but may have any other shape in a plan view.

[0032] As an example, a solid cathode electrode 110 (n-side electrode) is provided on the rear surface (lower surface) of the substrate 101 .

[0033] As an example, the surface light emitting element 10 is mounted on a mounting substrate (for example, a drive substrate having a driver, a wiring substrate connected to the driver, etc.) with the junction facing up.

[0034] (Substrate) The substrate 101 is, for example, a GaAs substrate (for example, an n-GaAs substrate).

[0035] (First Semiconductor Multilayer Reflector) The first semiconductor multilayer reflector 102 is, for example, a semiconductor multilayer reflector doped with n-type impurities, exhibiting low light absorption, high reflectivity, and electrical conductivity. Multilayer reflectors are also called distributed Bragg reflectors (DBRs). The first semiconductor multilayer reflector 102 has a structure in which high-refractive index layers and low-refractive index layers, each having a different refractive index, are alternately stacked with an optical thickness equal to one-quarter of the emission wavelength of the light-emitting layer 103. The low-refractive index layers are made of a compound semiconductor containing Al (e.g., AlGaAs, AlAs, etc.). The high-refractive index layers are made of a compound semiconductor (e.g., AlGaAs, GaAs, etc.). The low-refractive index layers are high-Al composition layers with a higher Al composition than the high-refractive index layers. It is preferable that the refractive index difference (Al composition difference) between the high-refractive index layers and the low-refractive index layers be as large as possible. This is because high reflectivity can be obtained with a small number of pairs. The Al composition of the low refractive index layer is preferably 0.8 or more, more preferably 0.85 or more, even more preferably 0.9 or more, and even more preferably 0.95 or more. The Al composition of the high refractive index layer is preferably 0.2 or less, more preferably 0.15 or less, even more preferably 0.1 or less, and even more preferably 0.05 or less. Examples of n-type impurities (n-type dopants) in the first semiconductor multilayer film reflector 102 include Si, Se, and Ge. The first semiconductor multilayer film reflector 102 is set to have a slightly higher reflectivity than the second semiconductor multilayer film reflector 105.

[0036] (Light-Emitting Layer) The light-emitting layer 103 is, for example, made of a compound semiconductor having a band gap energy smaller than that of the first and second semiconductor structures SS1 and SS2. The light-emitting layer 103 is, for example, made of a GaAs-based compound semiconductor (e.g., GaAs, AlGaAs, GaInAs, GaInAsN, etc.). The light-emitting layer 103 may have any of a quantum well structure, a multiple quantum well structure, a quantum wire structure, and a quantum dot structure. The emission wavelength of the light-emitting layer 103 is set to, for example, about 700 to 1100 nm. The light-emitting layer 103 is also called an "active layer." The light-emitting layer 103 is preferably disposed at or near the antinode of a standing wave generated in the resonator.

[0037] (Second Semiconductor Multilayer Reflector) The second semiconductor multilayer reflector 105 (semiconductor DBR), for example, is a semiconductor multilayer reflector doped with p-type impurities, and has low light absorption, high reflectivity, and electrical conductivity. Multilayer reflectors are also called distributed Bragg reflectors (DBRs). The second semiconductor multilayer reflector 105 has a structure in which high-refractive index layers 105a and low-refractive index layers 105b, which have different refractive indices, are alternately stacked with an optical thickness equal to one-quarter of the emission wavelength of the light-emitting layer 103. The low-refractive index layers 105b are made of a compound semiconductor containing Al (e.g., AlGaAs, AlAs, etc.). The high-refractive index layers 105a are made of a compound semiconductor (e.g., AlGaAs, GaAs, etc.). The low-refractive index layers 105b are high-Al composition layers with a higher Al composition than the high-refractive index layers 105a. It is preferable that the refractive index difference (Al composition difference) between the high-refractive index layer 105a and the low-refractive index layer 105b is large. This is because high reflectivity can be obtained with a small number of pairs. The Al composition of the low-refractive index layer 105b is preferably 0.8 or more, more preferably 0.85 or more, even more preferably 0.9 or more, and even more preferably 0.95 or more. The Al composition of the high-refractive index layer 105a is preferably 0.2 or less, more preferably 0.15 or less, even more preferably 0.1 or less, and even more preferably 0.05 or less. Examples of p-type impurities (p-type dopants) in the second semiconductor multilayer film reflector 105 include Zn, Mg, Be, and C.

[0038] (Contact Layer) The contact layer 106 is, for example, a highly doped layer (e.g., a p-GaAs layer) that is highly doped with p-type impurities (p-dopants) such as Zn, Mg, Be, and C.

[0039] (Insulating Film 108) The insulating film 108 is made of, for example, SiO ２ The insulating layer is made of a dielectric material such as SiN or SiON.

[0040] (Anode Electrode) The anode electrode 107 may have a single-layer structure or a laminated structure. The anode electrode 107 is made of at least one metal (including alloys) selected from the group consisting of, for example, Au, Ag, Pd, Pt, Ni, Ti, V, W, Cr, Al, Cu, Zn, Sn, Ge, and In. When the anode electrode 107 has a laminated structure, it is made of materials such as Ti / Au, Ti / Al, Ti / Al / Au, Ti / Pt / Au, Ni / Au, Ni / Au / Pt, Ni / Pt, Pd / Pt, Ag / Pd, or the like.

[0041] (Electrode Pad) The electrode pad 111 may have a single-layer structure or a multilayer structure. The electrode pad 111 is made of at least one metal (including alloys) selected from the group consisting of, for example, Au, Ag, Pd, Pt, Ni, Ti, V, W, Cr, Al, Cu, Zn, Sn, Ge, and In. When the electrode pad 111 has a multilayer structure, it is made of materials such as Ti / Au, Ti / Al, Ti / Al / Au, Ti / Pt / Au, Ni / Au, Ni / Au / Pt, Ni / Pt, Pd / Pt, Ag / Pd, etc. The electrode pad 111 is electrically connected to the anode side of the driver via, for example, a bonding wire.

[0042] (Anode Wiring) The anode wiring 112 may have a single-layer structure or a laminated structure. The anode wiring 112 is made of at least one metal (including alloys) selected from the group consisting of, for example, Au, Ag, Pd, Pt, Ni, Ti, V, W, Cr, Al, Cu, Zn, Sn, Ge, and In. When the anode wiring 112 has a laminated structure, it is made of materials such as Ti / Au, Ti / Al, Ti / Al / Au, Ti / Pt / Au, Ni / Au, Ni / Au / Pt, Ni / Pt, Pd / Pt, Ag / Pd, or the like.

[0043] (Cathode Electrode) The cathode electrode 110 may have a single-layer structure or a laminated structure. The cathode electrode 110 is made of at least one metal (including alloys) selected from the group consisting of, for example, Au, Ag, Pd, Pt, Ni, Ti, V, W, Cr, Al, Cu, Zn, Sn, Ge, and In. When the cathode electrode 110 has a laminated structure, it is made of materials such as Ti / Au, Ti / Al, Ti / Al / Au, Ti / Pt / Au, Ni / Au, Ni / Au / Pt, Ni / Pt, Pd / Pt, Ag / Pd, or the like. The cathode electrode 110 is electrically connected to the cathode side of the driver.

[0044] (oxidized constriction layer)

[0045] For example, the oxidized constriction layer 104 has a non-oxidized region 104 a and an oxidized region 104 b (insulating region) surrounding the non-oxidized region 104 a. The oxidized constriction layer 104 is preferably disposed at or near a node of a standing wave generated in the resonator.

[0046] The non-oxidized region 104a corresponds to the light-emitting region LA and functions as a current / light passage region. The non-oxidized region 104a includes, for example, an Al-containing compound semiconductor (e.g., AlGaAs, AlAs, etc.). The Al composition of the compound semiconductor is preferably equal to or greater than the Al composition of the low-refractive-index layer 105b of the second semiconductor multilayer reflector 105. The Al composition of the compound semiconductor is preferably 0.8 or greater, more preferably 0.85 or greater, even more preferably 0.9 or greater, and even more preferably 0.95 or greater.

[0047] The oxidized region 104b is, for example, a circular (for example, ring-shaped) region in plan view that surrounds the non-oxidized region 104a. The oxidized region 104b has a higher resistance and a lower refractive index than the non-oxidized region 104a, and functions as a current / light confinement region. For example, the oxidized region 104b is made of an oxide containing Al (for example, Al ｘ O ｙ etc.)

[0048] (First and second missing portions) A circular first missing portion in which a solid layer is provided is provided on the surface (top surface) of the light-emitting element portion LE on the second structure ST2 side, and a second missing portion surrounding the first missing portion in which a solid layer is provided is provided.

[0049] An example of the first defect portion is a first trench TR1 (groove). An example of the second defect portion is a second trench TR2 (groove) surrounding the first trench TR1. The term "trench" can also be referred to as, for example, a "hole," a "recess," or a "concave portion."

[0050] As an example, the first trench TR1 is a circumferential trench (circumferential trench) that surrounds the non-oxidized region 104a of the oxidized constriction layer 104 in a plan view. As an example, the first trench TR1 is a narrow trench having a width of several μm (e.g., 1 μm to 7 μm). The first trench TR1 may have discontinuous portions and / or interrupted portions in the circumferential direction.

[0051] The bottom surface of the first trench TR1 is located at a position farther from the surface of the light-emitting element portion LE on the first structure ST1 side (the lower surface of the substrate 101) than the oxidized constriction layer 104. In other words, the bottom surface of the first trench TR1 is located at a position closer to the surface of the light-emitting element portion LE on the second structure ST2 side (the upper surface of the contact layer 106) than the oxidized constriction layer 104.

[0052] More specifically, the bottom surface of the first trench TR1 is located within the second semiconductor structure SS2 (more specifically, within the second semiconductor multilayer film reflector 105) on the contact layer 106 side (upper side) of the oxide constriction layer 104. That is, the first trench TR1 penetrates at least the contact layer 106.

[0053] A portion of the insulating film 108 is provided (embedded) in the first trench TR1 as the solid layer. More specifically, a Si-based coating (a deposition film made of deposited material), for example, is formed on the two opposing side surfaces and bottom surface of the first trench TR1, and a portion of the insulating film 108 is provided on the coating. Alternatively, the coating may not be formed, and a portion of the insulating film 108 may be provided directly on the two opposing side surfaces and bottom surface of the first trench TR1. A portion of the first trench TR1 may be a gas layer (e.g., an air layer).

[0054] An inner peripheral region of the first trench TR1 of the light-emitting element portion LE (more specifically, the second semiconductor multilayer film reflector 105) includes another non-oxidized region NOA (the region surrounded by a dashed line in FIG. 1 ) having a larger diameter than the non-oxidized region 104a. The other non-oxidized region NOA includes the high-refractive index layer 105a and the low-refractive index layer 105b of the second semiconductor multilayer film reflector 105. That is, the other non-oxidized region NOA includes a compound semiconductor containing Al (e.g., AlGaAs, AlAs, GaAs, etc.).

[0055] The light emitting element section LE has an oxidized region OA (the dark gray region in FIG. 1) on the outer periphery of the low refractive index layer 105b of the second semiconductor multilayer film reflector 105. The oxidized region OA is circular and surrounds the corresponding low refractive index layer 105b. The oxidized region OA has an inner periphery portion OA1 on the inner periphery of the first trench TR1 and on the outer periphery of the non-oxidized region NOA, and an outer periphery portion OA2 on the outer periphery of the first trench TR1 and on the inner periphery of the trench TR2. The oxidized region OA is formed of an oxide containing Al (e.g., Al ｘ O ｙ The inner periphery OA1 of the oxidized region OA does not necessarily have to exist.

[0056] A guide layer GL that guides the current and light entering and exiting the oxidized constricting layer 104 is provided between the non-oxidized area NOA and the oxidized constricting layer 104. The guide layer GL is not limited to being one layer, and multiple layers may be provided.

[0057] An anode electrode 107 is provided on at least a region on the inner periphery of the first trench TR1 of the surface of the second semiconductor structure SS2 (the upper surface of the contact layer 106) opposite to the light emitting layer 103. At least a portion (e.g., a majority) of the anode electrode 107 is disposed on a region of the contact layer 106 corresponding to the non-oxidized region NOA.

[0058] As an example, the second trench TR2 is a groove (circumferential groove) that is circumferential in plan view and is wider than the first trench TR1. The bottom surface of the second trench TR2 is located at a position (for example, within the first semiconductor multilayer film reflector 102) closer to the lower surface of the substrate 101 than to the lower surface (surface on the substrate 101 side) of the oxidized constriction layer 104. The second trench TR2 may have a discontinuous portion and / or an interrupted portion in the circumferential direction.

[0059] The second trench TR2 is provided (embedded) with an insulating material 109 as the solid layer. Examples of the insulating material 109 include polyimide and BCB (benzocyclobutene).

[0060] The inner diameter D1 of the first trench TR1 is set to be equal to or larger than the desired mesa diameter (effective mesa diameter, which is the diameter of the non-oxidized region NOA). That is, the effective mesa diameter is a value obtained by subtracting the radial length (including 0) of the inner periphery OA1 of the oxidized region OA from D1. The inner diameter D2 (diameter of the light emitting mesa) of the second trench TR2 is set to be larger than the desired mesa diameter (effective mesa diameter) by the radial length of the oxidized region OA.

[0061] <<Operation of the Surface-Emitting Element>> The operation of the surface-emitting element 10 will now be described. When a power supply voltage of the driver is applied to the light-emitting element portion LE, a current flows into the light-emitting element portion LE from the anode side of the driver via the anode electrode 107. The current flowing into the light-emitting element portion LE flows vertically through the contact layer 106 and the second semiconductor multilayer film reflector 105 (non-oxidized region NOA) and is guided by the guide layer GL toward the non-oxidized region 104a of the oxidized constriction layer 104. The current guided toward the non-oxidized region 104a is constricted by the oxidized region 104b of the oxidized constriction layer 104 and is injected into the light-emitting region LA of the light-emitting layer 103. At this time, the light emitting region LA emits light, and the light travels back and forth between the first and second semiconductor multilayer film reflectors 102, 105 while being confined by the oxidized region 104b of the oxide constriction layer 104 and amplified by the light emitting layer 103. When the oscillation conditions are satisfied, the light is emitted as laser light from the surface (top surface) of the light emitting element LE on the side of the contact layer 106. The current injected into the light emitting region LA flows out to the cathode side of the driver via the first semiconductor multilayer film reflector 102, the substrate 101, and the cathode electrode 110 in this order.

[0062] <<Method for Manufacturing Surface Light Emitting Device>> An example of a method for manufacturing the surface light emitting device 10 will be described below with reference to the flowchart in Fig. 3. As an overall flow, first, a semiconductor manufacturing method using semiconductor manufacturing equipment is used to simultaneously produce a plurality of surface light emitting devices 10 on a single wafer (hereinafter referred to as "substrate 101" for convenience) that is the base material of the substrate 101. Next, the series of the plurality of surface light emitting devices 10 are separated from each other by dicing (e.g., stealth dicing) to obtain chip-shaped surface light emitting devices 10.

[0063] In the first step S1, a stack is produced (see FIG. 4). Specifically, a first semiconductor multilayer reflector 102, a light-emitting layer 103, an oxidized layer 104S (e.g., AlGaAs, AlAs, etc.), a second semiconductor multilayer reflector 105, and a contact layer 106 are stacked in this order on a substrate 101 as a growth substrate by an epitaxial crystal growth method such as MOCVD (Metal Organic Chemical Vapor Deposition). When producing the stack, the compound semiconductor raw materials include, for example, methyl-based organometallic gases such as trimethylaluminum (TMAl), trimethylgallium (TMGa), and trimethylindium (TMIn), and arsine (AsH ３ ) gas is used, and the source of the donor impurity is, for example, disilane (Si ２ H ６ ) is used, and the raw material of the acceptor impurity is, for example, carbon tetrabromide (CBr ４ ) is used.

[0064] In the next step S2, a second trench TR2 is formed in the stack. Specifically, a resist pattern RP1 for forming the second trench TR2 is first formed on the stack by photolithography (see FIG. 5). Next, the stack is etched, for example, by dry etching using the resist pattern RP1 as a mask (see FIG. 6). This etching is continued until at least the side of the oxidized layer 104S is exposed (e.g., until the bottom of the etching is positioned within the first semiconductor multilayer reflector 102). As a result, the second trench TR2 is formed, and the first mesa M1, which will become the light-emitting mesa, and the second mesa M2, which will become the dummy mesa, are formed. This dry etching forms a coating (a deposition film made of deposited material) on the side of the first mesa M1. Because this coating acts as an oxidation-suppressing film and prevents the formation of the oxidation constriction layer 104, the side of the first mesa M1 is cleaned to remove the coating. The resist pattern RP1 is then removed (see FIG. 7).

[0065] In the next step S3, a first trench TR1 is formed in the stack. Specifically, a resist pattern RP2 for forming the first trench TR1 is first formed by photolithography on the stack in which the second trench TR2 has been formed (see FIG. 8). Next, the stack is dry-etched using the resist pattern RP2 as a mask (see FIG. 9). The etching is stopped before the bottom of the etching reaches the oxidized layer 104S (e.g., before reaching the low-refractive-index layer 105b that will become the guide layer GL). This dry etching forms a coating (a deposition film made of deposited material) on the two opposing side surfaces and bottom surface of the first trench TR1. Here, the inside of the first trench TR1 is not intentionally cleaned, and the coating (deposition film) formed on the side surfaces is intentionally left. Then, the resist pattern RP2 is removed (see FIG. 10). It is also possible to reverse the order of steps S2 and S3. However, if step S3 is performed first, it is necessary to use a cleaning solution that does not peel off the resist pattern RP1 during cleaning in the subsequent step S2.

[0066] In the next step S4, an oxidation constriction layer 104 is formed (see FIG. 11 ). Specifically, the second trench TR2 formed in the stack is exposed to a high-temperature water vapor atmosphere to selectively oxidize the oxidized layer 104S (see FIG. 10 ) for a predetermined distance from the side. This predetermined distance is a distance that allows the oxidation constriction layer 104 to achieve the desired oxidation constriction diameter (the inner diameter of the oxidized region 104b). During this oxidation process, oxidation also begins from the side of the high-Al-composition low-refractive-index layer 105b of the second semiconductor multilayer reflector 105. However, in the low-refractive-index layers 105b whose sides are located on the outer periphery of the first trench TR1 (the low-refractive-index layers 105b other than the low-refractive-index layers 105b that form the guide layer GL), the oxidation process rapidly slows down (the oxidation rate drops dramatically) when it approaches the first trench TR1, and stops, for example, just past the first trench TR1. This is because the coatings (deposited films made of deposited materials) formed on the two opposing side surfaces of the first trench TR1 function as oxidation-suppressing films. Here, the oxidation stops slightly past the first trench TR1, but depending on the oxidation conditions, deposition conditions of the deposited film, and the like, oxidation may also stop at the first trench TR1. Note that the side of the low-refractive-index layer 105b of the second mesa M2 (see FIG. 7), which becomes a dummy mesa during the oxidation process, on the side of the second trench TR2 is also oxidized in the same manner.

[0067] In the next step S5, the anode electrode 107 and the electrode pad 111 are formed (see FIG. 12 ). Specifically, for example, by lift-off, the anode electrode 107 is formed in a ring shape, for example, so as to surround the light-emitting region in plan view on a region of the contact layer 106 of the light-emitting element unit LE that corresponds to the non-oxidized region NOA, and the electrode pad 111 is formed in a circular shape, for example, in plan view, on a region of the contact layer 106 of the dummy element unit DE that corresponds to the non-oxidized region. At this time, deposition, sputtering, or the like is used to form the electrode material.

[0068] In the next step S6, the insulating film 108 is formed (see FIG. 13 ). Specifically, the insulating film 108 is first formed over the entire surface. At this time, a portion of the insulating film 108 is embedded in the first trench TR1, and another portion of the insulating film 108 is formed along the second trench TR2. Next, the insulating film 108 on the anode electrode 107 and the electrode pad 111 is removed by photolithography and etching to expose the anode electrode 107 and the electrode pad 111.

[0069] In the next step S7, the second trench TR2 is filled with an insulating material 109 (see FIG. 14). Specifically, first, a thick film of the insulating material 109 is formed over the entire surface. Next, the insulating material 109 provided in areas other than the second trench TR2 is removed by photolithography and etching. Next, the protruding portion (unnecessary portion) of the insulating material 109 from the second trench TR2 is polished and flattened.

[0070] In the next step S8, the anode wiring 112 is formed on the second laminate (see FIG. 15). Specifically, the anode wiring 112 is formed by, for example, a lift-off method so as to bridge over the anode electrode 107 and the electrode pad 111. At this time, for example, evaporation, sputtering, or the like is used to form a film of the wiring material.

[0071] In the final step S9, the cathode electrode 110 is formed on the second stack (see FIG. 16). Specifically, the cathode electrode 110 is formed in a solid state on the rear surface (lower surface) of the substrate 101. At this time, the electrode material is deposited by, for example, vapor deposition, sputtering, or the like.

[0072] <Effects of the Surface Light Emitting Element and the Method for Manufacturing the Surface Light Emitting Element> The effects of the surface light emitting element 10 and the method for manufacturing the surface light emitting element 10 will be described below.

[0073] The surface light emitting element 10 includes a light emitting element portion LE including a first structure ST1 including a first semiconductor structure SS1, a second structure ST2 including a second semiconductor structure SS2 stacked on the first structure ST1, a light emitting layer 103 disposed between the first and second structures ST1 and ST2, and an oxide constriction layer 104 provided within the second structure ST2. A first trench TR1 (first defect portion) having a circular shape and in which a part (solid layer) of an insulating film 108 is provided is provided on the surface (upper surface) of the light emitting element portion LE on the second structure ST2 side, and a second trench TR2 (second defect portion) surrounding the first trench TR1 and in which an insulating material 109 (solid layer) is provided is provided.

[0074] In the surface-emitting element 10, the second trench TR2 is provided in the upper surface of the light-emitting element portion LE, thereby exposing the side surface of the oxidized layer 104S, which is the material for the oxidation constriction layer 104. Furthermore, the first trench TR1 is provided in the upper surface of the light-emitting element portion LE, thereby preventing the region of the light-emitting element portion LE corresponding to the first trench TR1 (e.g., the low-refractive index layer 105b of the second semiconductor multilayer film reflector 105) from being significantly oxidized from the side surface during the oxidation process. That is, in the surface-emitting element 10, the oxidation distance of the oxidation constriction layer 104 can be increased (the oxidation constriction diameter can be reduced) during the oxidation process while reducing the oxidation distance of the easily oxidized layer other than the oxidation constriction layer 104 (e.g., the low-refractive index layer 105b). This allows the oxidation constriction diameter to be set to a desired size (e.g., a smaller diameter) without increasing the oxidized region that restricts the current path from the anode electrode 107 to the oxidation constriction layer 104.

[0075] As a result, the surface-emitting element 10 can provide a surface-emitting element that can prevent the current path from the anode electrode 107 provided on the light-emitting element section LE to the oxidized constriction layer 104 from being restricted (see Figure 17).

[0076] On the other hand, in the surface-emitting device C1 according to Comparative Example 1 shown in FIG. 18 , during the oxidation process for forming the oxidized constriction layer OCL, the low-refractive-index layer, which is a high-Al composition layer (easily oxidized layer) of the DBR2 (upper reflector), is also largely oxidized from the side. Therefore, for example, if an electrode E2 (upper electrode) is provided on the DBR2 via a contact layer CL (e.g., a GaAs layer), the oxidized region of the DBR2 is located directly below the electrode E2, and current injected from the electrode E2 cannot pass downward through the oxidized region, which is an insulating layer, but flows laterally through the contact layer CL toward the center of the mesa and then downward. In this case, the sheet resistance of the contact layer CL has a strong influence, resulting in increased element resistance (element voltage) and differential resistance for the entire VCSEL.

[0077] One possible solution to this problem is to reduce the inner diameter of electrode E2, as in surface-emitting device C2 according to Comparative Example 2 shown in Figure 19. In the example of Figure 19, light generated in the light-emitting region is emitted toward the top of the mesa, but the emitted light is emitted with an angle of about 20 to 30 degrees relative to the vertical direction (stacking direction). Therefore, if the inner diameter of electrode E2 is reduced, there is a concern that the emitted light EL will come into contact with the inner periphery of electrode E2, resulting in a decrease in power.

[0078] The method for manufacturing the surface-emitting element 10 includes the steps of: generating a stack in which a first semiconductor structure SS1, a light-emitting layer 103, and a second semiconductor structure SS2 are stacked in this order on a substrate 101, the stack having an oxidizable layer 104S as an intermediate layer; forming a second trench TR2 (defect portion) having a circular portion on the surface of the stack facing the second semiconductor structure SS2; forming a circular first trench TR1 (groove) on the surface on the inner side of the circular portion; and oxidizing the stack from the side.

[0079] In the manufacturing method of the surface-emitting element 10, the second trench TR2 is formed on the upper surface of the light-emitting element portion LE, so that the side surface of the oxidized layer 104S, which is the material for the oxidized constriction layer 104, can be exposed, and the first trench TR1 is formed on the upper surface of the light-emitting element portion LE, so that the area corresponding to the first trench TR1 of the light-emitting element portion LE (for example, the low refractive index layer 105b of the second semiconductor multilayer film reflector 105) can be prevented from being significantly oxidized from the side surface during the oxidation process.

[0080] As a result, according to the manufacturing method of the surface light emitting element 10, it is possible to manufacture a surface light emitting element that can suppress restriction of the current path from the anode electrode 107 provided on the light emitting element portion LE to the oxidized constriction layer 104.

[0081] In the step of forming the first trench TR1, the first trench TR1 is formed so that the bottom surface of the first trench TR1 is located at a position (above the oxidized layer 104S) farther from the surface of the stacked body on the substrate 101 side (the lower surface of the substrate 101) than the oxidized layer 104S. This makes it possible to prevent the portion of the stacked body above the oxidized layer 104S from being oxidized to a large extent, and to oxidize the oxidized layer 104S to a large extent (by a desired distance).

[0082] The method further includes a step of forming an anode electrode 107 on at least a region on the inner periphery of the first trench TR1 on the surface of the stack on the second semiconductor structure SS2 side. This makes it possible to manufacture a surface light emitting element that can suppress increases in element resistance (element voltage) and differential resistance.

[0083] 2. Surface light emitting device according to example 2 of an embodiment of the present technology> Fig. 20 is a cross-sectional view of a surface light emitting device 20 according to example 2 of an embodiment of the present technology. Fig. 21 is a plan view of the surface light emitting device 20 according to example 2 of an embodiment of the present technology. Fig. 20 is a cross-sectional view taken along line 20-20 of Fig. 21 .

[0084] As shown in FIGS. 20 and 21, the surface light emitting device 20 has a configuration generally similar to that of the surface light emitting device 10 according to Example 1, except that the second cutout portion includes a groove and a notch.

[0085] In the surface light emitting element 20, a circumferential portion (e.g., a majority portion) of the second missing portion is a second trench TR2 serving as a groove, and the other portion is a notch NOT. Here, the bottom surfaces of the notch NOT and the second trench TR2 are located, for example, within the first semiconductor multilayer film reflector 102. However, this is not limiting and they may be located at least closer to the underside of the substrate 101 than the oxidized constriction layer 104 (at a position where the side surface of the oxidized constriction layer 104 can be exposed). An insulating material 109 is embedded in the second trench TR2. The notch NOT includes an insulating film 108 as a solid layer and an air layer as a gas layer. At least one of the second trench TR2 and the notch NOT may have a discontinuous portion and / or an interrupted portion in the circumferential direction.

[0086] The surface light emitting device 20 provides the same effects as the surface light emitting device 10 according to the first embodiment.

[0087] 22 is a cross-sectional view of a surface light emitting device 30 according to Example 3 of an embodiment of the present technology. Fig. 23 is a plan view of the surface light emitting device 30 according to Example 3 of an embodiment of the present technology. Fig. 22 is a cross-sectional view taken along line 22-22 of Fig. 23.

[0088] As shown in Figures 22 and 23, the surface-emitting element 30 has a configuration generally similar to that of the surface-emitting element 10 of Example 1, except that it does not have a dummy element portion DE and the second missing portion does not include a groove but a notch.

[0089] In the surface light emitting element 30, the notch NOT is provided in a circumferential shape so as to surround the first trench TR1. Here, the bottom surface of the notch NOT is located within the first semiconductor multilayer film reflector 102, but this is not limiting and it may be located at a position at least closer to the underside of the substrate 101 than the oxidized constriction layer 104 (a position where the side surface of the oxidized constriction layer 104 can be exposed). The notch NOT may have discontinuous and / or intermittent portions in the circumferential direction. The notch NOT is provided with an insulating film 108 as a solid layer and an air layer as a gas layer.

[0090] The surface light emitting device 30 provides substantially the same effects as the surface light emitting device 10 according to the first embodiment, and also allows for a simplified configuration and a smaller size.

[0091] 24 is a cross-sectional view of a surface light emitting device 40 according to Example 4 of an embodiment of the present technology. Fig. 25 is a plan view of the surface light emitting device 40 according to Example 4 of an embodiment of the present technology. Fig. 24 is a cross-sectional view taken along line 24-24 in Fig. 25 .

[0092] As shown in Figures 24 and 25, the surface light emitting device 40 has a configuration generally similar to that of the surface light emitting device 30 of Example 3, except that it has an intra-cavity structure in which the cathode electrode 110 is arranged within the resonator.

[0093] In the surface-emitting device 40, as an example, the cathode electrode 110 is provided in a circumferential shape (e.g., a frame shape) so as to surround the light-emitting mesa on the region around the light-emitting mesa of the first semiconductor multilayer film reflector 102. Here, the insulating film 108 and the cathode electrode 110 are provided as solid layers in the notch NOT, and an air layer is provided as a gas layer.

[0094] The surface light emitting device 40 can achieve substantially the same effects as the surface light emitting device 30 according to the third embodiment, and also has an intra-cavity structure, which can further reduce the element resistance (element voltage).

[0095] 5. Surface light emitting device according to example 5 of an embodiment of the present technology> Fig. 26 is a cross-sectional view of a surface light emitting device 50 according to example 5 of an embodiment of the present technology. Fig. 27 is a plan view of the surface light emitting device 50 according to example 5 of an embodiment of the present technology. Fig. 26 is a cross-sectional view taken along line 26-26 in Fig. 27 .

[0096] As shown in FIGS. 26 and 27, the surface light emitting device 50 has a configuration generally similar to that of the surface light emitting device 30 according to Example 3, except that both the first and second cutout portions include cutouts.

[0097] In the surface light emitting device 50, the first missing portion includes a first notch NOT1, and the second missing portion includes a second notch NOT2 surrounding the first notch NOT1 in a planar view. The first notch NOT1 is a circular notch located on the outer periphery of the non-oxidized region NOA of the light emitting mesa. The second notch NOT2 is a circular notch located on the outer periphery of the region of the light emitting mesa that includes the guide layer GL, the oxidized constriction layer 104, and the light emitting layer 103. The second notch NOT2 has a larger diameter than the first notch NOT1, and a step exists at the boundary between the first and second notches NOT1 and NOT2. Both the first and second notches NOT1 and NOT2 are provided with an insulating film 108 as a solid layer and an air layer as a gas layer. At least one of the first and second notches NOT1 and NOT2 may have a discontinuous portion and / or an intermittent portion.

[0098] The surface-emitting device 50 can be manufactured, for example, by removing the portion including the oxidized region OA on the outer periphery of the first trench TR1 of the light-emitting mesa of the surface-emitting device 30 of Example 3, for example, by photolithography and etching, and then forming the insulating film 108.

[0099] According to the surface-emitting device 50, the same effect as the surface-emitting device 30 of Example 3 can be obtained, and although the manufacturing steps increase, the first and second notches NOT1 and NOT2 are largely exposed, making it easier to form the insulating film 108.

[0100] 6. Surface light emitting device according to example 6 of an embodiment of the present technology> Fig. 28 is a cross-sectional view of a surface light emitting device 60 according to example 6 of an embodiment of the present technology. Fig. 29 is a plan view of a surface light emitting device 60 according to example 6 of an embodiment of the present technology. Fig. 28 is a cross-sectional view taken along line 28-28 of Fig. 29 .

[0101] As shown in Figures 28 and 29, the surface-emitting element 60 has the same configuration as the surface-emitting element 50 of Example 5, except that an insulating material 109 is provided as a solid layer in the first and second notches NOT1 and NOT2.

[0102] The surface light emitting device 60 can provide the same effects as the surface light emitting device 50 according to the fifth embodiment, and also provides excellent protection for the light emitting mesa.

[0103] 7. Surface Light Emitting Device According to Example 7 of an Embodiment of the Present Technology FIG. 30 is a cross-sectional view of a surface light emitting device 70 according to Example 7 of an embodiment of the present technology.

[0104] As shown in FIG. 30, the surface light emitting device 70 has a configuration generally similar to that of the surface light emitting device 30 according to the third embodiment, except that the oxide constriction layer 104 is provided in the first structure ST1.

[0105] In the surface-emitting device 70, the oxide constriction layer 104 is disposed in the first semiconductor multilayer film reflector 102. The guide layer GL is also disposed in the first semiconductor multilayer film reflector 102. Here, the bottom surface of the first trench TR1 is located in the first semiconductor multilayer film reflector 102, on the light-emitting layer 103 side (upper side) of the oxide constriction layer 104. That is, the first trench TR1 penetrates through the contact layer 106, the second semiconductor multilayer film reflector 105, and the light-emitting layer 103. Note that the bottom surface of the first trench TR1 may be located in the second semiconductor multilayer film reflector 105 or the light-emitting layer 103.

[0106] The surface light emitting device 70 provides the same effects as the surface light emitting device 30 according to the third embodiment.

[0107] 8. Surface Light Emitting Device According to Example 8 of an Embodiment of the Present Technology FIG. 31 is a cross-sectional view of a surface light emitting device 80 according to Example 8 of an embodiment of the present technology.

[0108] As shown in FIG. 31, the surface light emitting device 80 has a configuration generally similar to that of the surface light emitting device 50 according to the fifth embodiment, except that the oxide constriction layer 104 is provided in the first structure ST1.

[0109] In the surface-emitting device 80, the oxide constricting layer 104 is disposed in the first semiconductor multilayer reflector 102. The guide layer GL is also disposed in the first semiconductor multilayer reflector 102. Here, the bottom surface of the first notch NOT1 is located in the second semiconductor multilayer reflector 102 or in the light-emitting layer 103 (e.g., on the upper surface of the light-emitting layer 103), but it may be located on the opposite side (upper side) of the oxide constricting layer 104 from the substrate 101 side in the first semiconductor multilayer reflector 102. Here, the bottom surface of the second notch NOT2 is located in the first semiconductor multilayer reflector 102 on the substrate 101 side (lower side) of the oxide constricting layer 104, but it may be located within the substrate 101, for example.

[0110] The surface light emitting device 80 provides the same effects as the surface light emitting device 50 according to the fifth embodiment.

[0111] 9. Surface light emitting device according to example 9 of an embodiment of the present technology> Fig. 32 is a cross-sectional view of a surface light emitting device 90 according to example 9 of an embodiment of the present technology. Fig. 33 is a plan view of the surface light emitting device 90 according to example 9 of an embodiment of the present technology. Fig. 32 is a cross-sectional view taken along line 32-32 of Fig. 33 .

[0112] As shown in FIGS. 32 and 33, the surface light emitting device 90 has a configuration generally similar to that of the surface light emitting device 30 according to the third embodiment, except that it has a mesare-less structure.

[0113] In the surface light emitting element 90, the second missing portion includes a plurality of (e.g., eight) second trenches TR2. The plurality of second trenches TR2 are arranged, for example, at equal intervals along the circumferential direction of the first trench TR1 so as to surround the circular first trench TR1. Here, each second trench TR2 is arc-shaped.

[0114] The surface light emitting device 90 provides the same effects as the surface light emitting device 30 according to the third embodiment.

[0115] <10. Surface light emitting device according to example 10 of an embodiment of the present technology> Fig. 34 is a cross-sectional view of a surface light emitting device 100 according to example 10 of an embodiment of the present technology. Fig. 35 is a plan view of the surface light emitting device 100 according to example 10 of an embodiment of the present technology. Fig. 34 is a cross-sectional view taken along line 34-34 of Fig. 35 .

[0116] The surface-emitting element 100 has a configuration generally similar to that of the surface-emitting element 30 of Example 3, except that it has multiple (e.g., six) light-emitting element units LE arranged two-dimensionally (e.g., in a matrix), as shown in Figures 34 and 35.

[0117] In the surface light emitting device 100, as an example, a plurality of light emitting element units LE, each having a light emitting mesa, share the substrate 101, the cathode electrode 110, and a portion (e.g., the lower portion) of the first semiconductor multilayer film reflector 102. That is, the plurality of light emitting element units LE have an electrode layout in which the cathode is shared and the anode is independent. Therefore, each light emitting element unit LE can be driven independently. The second trenches TR2 provided in each light emitting element unit LE are in communication with each other.

[0118] The surface light emitting device 100 can provide a surface light emitting device array that has the same effects as the surface light emitting device 10 according to the first embodiment and in which the element resistance of each light emitting element unit LE is reduced. In the surface light emitting device 100, the plurality of light emitting element units LE may be arranged, for example, in a staggered manner or in a one-dimensional manner. The number of light emitting element units LE can also be changed as appropriate.

[0119] <11. Surface light emitting device according to Example 11 of an embodiment of the present technology> Fig. 36 is a cross-sectional view of a surface light emitting device 119 according to Example 11 of an embodiment of the present technology. Fig. 37 is a plan view of the surface light emitting device 119 according to Example 11 of an embodiment of the present technology. Fig. 36 is a cross-sectional view taken along line 36-36 in Fig. 37 .

[0120] As shown in FIGS. 36 and 37, the surface light emitting device 119 has substantially the same configuration as the surface light emitting device 90 according to the ninth embodiment, except that it includes a plurality of (for example, two) light emitting element units LE.

[0121] In the surface light emitting element 119, two light emitting element units LE share the substrate 101, the cathode electrode 110, and a part (e.g., the lower part) of the first semiconductor multilayer film reflector 102. That is, the multiple light emitting element units LE have an electrode layout in which the cathode is shared and the anode is independent. Therefore, each light emitting element unit LE can be driven independently. Among the multiple second trenches TR2 provided in each light emitting element unit LE, one second trench TR2 has an overlapping portion.

[0122] According to the surface light emitting element 119, it is possible to obtain the same effect as the surface light emitting element 90 according to the ninth embodiment, and to provide a surface light emitting element array in which the element resistance of each light emitting element unit LE is reduced. Note that in the surface light emitting element 119, a plurality of light emitting element units LE may be arranged two-dimensionally (for example, in a matrix arrangement, a staggered arrangement, etc.). The number of light emitting element units LE can also be changed as appropriate.

[0123] 12. Surface Light Emitting Device According to Example 12 of an Embodiment of the Present Technology FIG. 38 is a cross-sectional view of a surface light emitting device 120 according to Example 12 of an embodiment of the present technology.

[0124] As shown in FIG. 38, the surface light emitting device 120 has a configuration generally similar to that of the surface light emitting device 90 according to the ninth embodiment, except that it constitutes a surface emitting laser of a back-side emission type.

[0125] In the surface light emitting element 120, a solid anode electrode 107 is provided on the lower surface of the contact layer 106. In this case, the entire area of ​​the anode electrode 107 corresponds to the non-oxidized region of the light emitting element portion LE, so that an increase in element resistance can be suppressed.

[0126] On the other hand, in the surface light emitting device C3 of Comparative Example 3 shown in FIG. 42, a part (end) of the electrode E2 is located on the oxidized region OA of the light emitting element portion LE, and therefore the element resistance increases.

[0127] 13. Surface Light Emitting Device According to Example 13 of an Embodiment of the Present Technology FIG. 39 is a cross-sectional view of a surface light emitting device 130 according to Example 13 of an embodiment of the present technology.

[0128] As shown in FIG. 39, the surface light emitting device 130 has a configuration generally similar to that of the surface light emitting device 120 according to Example 12, except that it has an intra-cavity structure.

[0129] In the surface light emitting element 130, the light emitting element section LE has a light emitting mesa, and the cathode electrode 110 is provided in a circumferential shape (for example, a frame shape) on the peripheral region of the light emitting mesa of the first semiconductor multilayer film reflector 102 so as to surround the light emitting mesa.

[0130] According to the surface light emitting device 130, it is possible to obtain the same effects as the surface light emitting device 120 according to the twelfth embodiment, and also, since it has an intra-cavity structure, it is possible to further suppress an increase in the element resistance.

[0131] 14. Surface Light Emitting Device According to Example 14 of an Embodiment of the Present Technology FIG. 40 is a cross-sectional view of a surface light emitting device 140 according to Example 14 of an embodiment of the present technology.

[0132] As shown in FIG. 40, the surface light emitting device 140 has a configuration generally similar to that of the surface light emitting device 120 according to Example 12, except that the light emitting device portion LE has a light emitting mesa.

[0133] According to the surface light emitting device 140, the same effects as those of the surface light emitting device 120 according to the twelfth embodiment can be obtained.

[0134] 15. Surface Light Emitting Device According to Example 15 of an Embodiment of the Present Technology FIG. 41 is a cross-sectional view of a surface light emitting device 150 according to Example 15 of an embodiment of the present technology.

[0135] As shown in FIG. 41, the surface light emitting device 150 has a configuration generally similar to that of the surface light emitting device 140 according to the fourteenth embodiment, except that it is a rear-emitting light emitting diode (LED).

[0136] In the surface light emitting device 150, a cladding layer 115 (for example, a p-AlGaAs layer) is provided in place of the first semiconductor multilayer film reflector 102.

[0137] In the surface-emitting element 150, the light emitted downward from the light-emitting layer 103 and reflected upward by the second semiconductor multilayer film reflector 105 and the light emitted upward from the light-emitting layer 103 are combined and emitted from the emission port on the inner diameter side of the cathode electrode 110.

[0138] According to the surface light emitting device 150, it is possible to provide a rear-emitting high-power LED that exhibits the same effects as the surface light emitting device 140 according to the fourteenth embodiment.

[0139] 16. Modifications of the Present Technology The present technology is not limited to the examples of the above-described embodiment, and can be modified as appropriate.

[0140] 43, an air layer may be provided as a gas layer in both the first trench TR1 and the notch NOT. A deposition film may be provided on at least one of the two opposing side surfaces and the bottom surface of the first trench TR1.

[0141] 44, an air layer may be provided as a gas layer in the first trench TR1, and an insulating material 109 may be provided as a solid layer in the cutout NOT. A deposition film may be provided on at least one of the two opposing side surfaces and the bottom surface of the first trench TR1.

[0142] 45 , an intermediate portion of the anode wiring 112 may be provided in the second trench TR2 via the insulating film 108. That is, in the surface light emitting element 10-1, the insulating film 108 and the anode wiring 112 are provided as solid layers in the second trench TR2, and the insulating film 108 is provided as a solid layer in the first trench TR1.

[0143] 46 , the oxide constriction layer 104 may be provided in the first structure ST1 (e.g., in the first semiconductor multilayer film reflector 102), and the bottom surface of the first trench TR1 may be located in the second structure ST2 (e.g., in the second semiconductor multilayer film reflector 105). In the surface light emitting element 70-1, a plurality of guide layers GL (e.g., two) are provided.

[0144] 47 shows a surface-emitting device 70-2 according to Modification 2 of Example 7, in which the oxide constriction layer 104 may be provided in both the first and second structures ST1 and ST2. Although the guide layer GL is not provided in the surface-emitting device 70-2, the guide layer GL may be provided by changing the depth of the first trench TR1 or the arrangement of the oxide constriction layer 104.

[0145] 48 , an oxide constriction layer 104 may be provided in both the first and second structures ST1, ST2. In the surface-emitting device 70-2, a plurality of guide layers GL (for example, two) are provided in both the first and second structures ST1, ST2, but the number of guide layers GL (including 0) may be changed by changing the depth of the first trench TR1 or the arrangement of the oxide constriction layer 104.

[0146] The oxide constriction layer 104 may be provided between the first semiconductor multilayer reflector 102 and the light emitting layer 103 and / or between the second semiconductor multilayer reflector 105 and the light emitting layer 103 .

[0147] Two cladding layers of different conductivity types may be provided to sandwich the light-emitting layer 103 from above and below. In this case, the oxide constriction layer 104 may be provided between one of the two cladding layers (spacer layers) and the semiconductor multilayer film reflector, between one of the two cladding layers and the light-emitting layer 103, or inside one of the two cladding layers.

[0148] The present technology can also be applied to a surface-emitting device having a multi-junction structure including multiple light-emitting layers stacked on top of each other. The surface-emitting device may be provided with a tunnel junction layer as needed. The surface-emitting device may be provided with multiple oxide constriction layers 104 as needed.

[0149] In the above-described embodiments and modifications, a GaAs-based surface-emitting device (a material system lattice-matched to GaAs) has been mainly described, but the present technology is not limited thereto and can also be applied to, for example, InP-based, GaN-based surface-emitting devices. As an example, in the case of an InP-based device, the semiconductor multilayer film reflector may contain AlGaInAs, and may be, for example, InP / AlGaInAs, AlInAs / AlGaInAs, etc. The light-emitting layer may be, for example, an AlGaInAs / AlGaInAs multiple quantum well layer.

[0150] That is, materials that emit light at any wavelength within the wavelength range of 200 to 2000 nm can be used for the surface light emitting element.

[0151] In the surface light emitting devices according to the above-described embodiments and modifications, the contact layer 106 is not essential.

[0152] At least one of the first and second structures ST1, ST2 is not limited to a semiconductor multilayer film reflector, but may in fact have a reflector made up of one or a combination of two or more types selected from semiconductors, dielectrics, and metals.

[0153] In the surface light emitting devices according to the above-described embodiments and modifications, the conductivity types (p-type and n-type) of the first and second semiconductor structures may be reversed. In this case, however, the positional relationship between the anode electrode and the cathode electrode must also be reversed.

[0154] Parts of the configurations of the surface light emitting devices according to the above-described embodiments and modifications may be combined within a range that does not contradict each other.

[0155] In each of the above-described embodiments and modifications, the arrangement, material, conductivity type, thickness, width, numerical value, shape, size, etc. of each layer constituting the surface-emitting device can be appropriately changed within the range in which the surface-emitting device functions.

[0156] 17. Application Examples to Electronic Devices The technology according to the present disclosure (the present technology) can be applied to various products (electronic devices). For example, the technology according to the present disclosure may be realized as a device mounted on any type of moving body such as an automobile, an electric vehicle, a hybrid electric vehicle, a motorcycle, a bicycle, personal mobility, an airplane, a drone, a ship, or a robot, or on a low-power device (for example, a smartphone, a smartwatch, a tablet, a mouse, etc.).

[0157] The surface light emitting device according to the present technology can also be applied as a light source for devices that form or display images using light (for example, printers, copiers, projectors, head-mounted displays, head-up displays, etc.).

[0158] 18. Example of Application of Surface Light Emitting Device to Distance Measuring Device An application example of the surface light emitting device 10 according to Example 1 of an embodiment of the present technology will be described below.

[0159] 49 illustrates an example of a schematic configuration of a distance measurement device 1000 (distance measuring device) including a surface light emitting element 10, as an example of an electronic device according to the present technology. The distance measurement device 1000 measures the distance to a subject S by a TOF (Time Of Flight) method. The distance measurement device 1000 includes the surface light emitting element 10. The distance measurement device 1000 includes, for example, the surface light emitting element 10, a light receiving device 125, lenses 128 and 138, a signal processing unit 145, a control unit 155, a display unit 165, and a storage unit 175.

[0160] The light receiving device 125 receives light emitted from the surface light emitting device 10 and reflected by the subject S (object). That is, the light receiving device 125 detects the light reflected by the subject S. The lens 128 is a lens, such as a collimating lens, for converting the light emitted from the surface light emitting device 10 into parallel light. The lens 138 is a lens, such as a condensing lens, for collecting the light reflected by the subject S and guiding it to the light receiving device 125.

[0161] The signal processing unit 145 is a circuit for generating a signal corresponding to the difference between the signal input from the light-receiving device 125 and the reference signal input from the control unit 155. The control unit 155 is configured to include, for example, a time-to-digital converter (TDC). The reference signal may be a signal input from the control unit 155 or an output signal from a detection unit that directly detects the output of the surface-emitting device 10. The control unit 155 is, for example, a processor that controls the surface-emitting device 10, the light-receiving device 125, the signal processing unit 145, the display unit 165, and the storage unit 175. The control unit 155 is a circuit that measures the distance to the subject S based on the signal generated by the signal processing unit 145. The control unit 155 generates a video signal for displaying information about the distance to the subject S and outputs it to the display unit 165. The display unit 165 displays the information about the distance to the subject S based on the video signal input from the control unit 155. The control unit 155 stores the information about the distance to the subject S in the storage unit 175.

[0162] In this application example, instead of the surface light emitting element 10, any of the surface light emitting elements 10-1, 20, 30, 30-1, 30-2, 40, 50, 50-1, 60, 70, 70-1, 70-2, 70-3, 80, 90, 100, 119, 120, 130, 140, and 150 can also be applied to the distance measurement device 1000.

[0163] 19. Example of Mounting Distance Measuring Device on a Moving Body FIG. 50 is a block diagram showing a schematic configuration example of a vehicle control system, which is an example of a moving body control system to which the technology according to the present disclosure can be applied.

[0164] The vehicle control system 12000 includes a plurality of electronic control units connected via a communication network 12001. In the example shown in Fig. 50, the vehicle control system 12000 includes a drive system control unit 12010, a body system control unit 12020, an outside-vehicle information detection unit 12030, an inside-vehicle information detection unit 12040, and an integrated control unit 12050. Also shown as functional components of the integrated control unit 12050 are a microcomputer 12051, an audio / video output unit 12052, and an in-vehicle network I / F (interface) 12053.

[0165] The drivetrain control unit 12010 controls the operation of devices related to the drivetrain of the vehicle in accordance with various programs. For example, the drivetrain control unit 12010 functions as a control device for a drive force generating device for generating a drive force of the vehicle, such as an internal combustion engine or a drive motor, a drive force transmission mechanism for transmitting the drive force to the wheels, a steering mechanism for adjusting the steering angle of the vehicle, and a braking device for generating a braking force of the vehicle.

[0166] The body system control unit 12020 controls the operation of various devices equipped in the vehicle body according to various programs. For example, the body system control unit 12020 functions as a control device for a keyless entry system, a smart key system, a power window device, or various lamps such as headlamps, backup lamps, brake lamps, turn signals, and fog lamps. In this case, radio waves transmitted from a portable device that serves as a key or signals from various switches can be input to the body system control unit 12020. The body system control unit 12020 receives these radio waves or signals and controls the vehicle's door lock device, power window device, lamps, etc.

[0167] The outside-vehicle information detection unit 12030 detects information outside the vehicle equipped with the vehicle control system 12000. For example, a distance measurement device 12031 is connected to the outside-vehicle information detection unit 12030. The distance measurement device 12031 includes the above-described distance measurement device 1000. The outside-vehicle information detection unit 12030 causes the distance measurement device 12031 to measure the distance to an object outside the vehicle (subject S) and acquires the distance data obtained thereby. The outside-vehicle information detection unit 12030 may perform object detection processing for people, cars, obstacles, signs, etc. based on the acquired distance data.

[0168] The in-vehicle information detection unit 12040 detects information inside the vehicle. For example, a driver state detection unit 12041 that detects the state of the driver is connected to the in-vehicle information detection unit 12040. The driver state detection unit 12041 includes, for example, a camera that captures an image of the driver, and the in-vehicle information detection unit 12040 may calculate the degree of fatigue or concentration of the driver based on the detection information input from the driver state detection unit 12041, or may determine whether the driver is dozing off.

[0169] The microcomputer 12051 can calculate control target values ​​for the driving force generating device, steering mechanism, or braking device based on the information inside and outside the vehicle acquired by the outside-vehicle information detection unit 12030 or the inside-vehicle information detection unit 12040, and output control commands to the drive system control unit 12010. For example, the microcomputer 12051 can perform cooperative control aimed at realizing the functions of an ADAS (Advanced Driver Assistance System), including vehicle collision avoidance or impact mitigation, following driving based on the inter-vehicle distance, vehicle speed maintenance driving, vehicle collision warning, vehicle lane departure warning, etc.

[0170] In addition, the microcomputer 12051 can perform cooperative control for the purpose of autonomous driving, which allows the vehicle to travel autonomously without relying on driver operation, by controlling the driving force generating device, steering mechanism, braking device, etc. based on information about the surroundings of the vehicle obtained by the outside vehicle information detection unit 12030 or the inside vehicle information detection unit 12040.

[0171] Furthermore, the microcomputer 12051 can output a control command to the body system control unit 12020 based on the information outside the vehicle acquired by the outside information detection unit 12030. For example, the microcomputer 12051 can control the headlamps according to the position of a preceding vehicle or an oncoming vehicle detected by the outside information detection unit 12030, and perform cooperative control aimed at preventing glare, such as switching from high beams to low beams.

[0172] The audio / video output unit 12052 transmits at least one of audio and video output signals to an output device capable of visually or audibly notifying information to vehicle occupants or the outside of the vehicle. In the example of Fig. 50, the output devices are exemplified by an audio speaker 12061, a display unit 12062, and an instrument panel 12063. The display unit 12062 may include, for example, at least one of an on-board display and a head-up display.

[0173] FIG. 51 is a diagram showing an example of the installation position of the distance measurement device 12031.

[0174] In FIG. 51 , a vehicle 12100 has distance measurement devices 12101, 12102, 12103, 12104, and 12105 as a distance measurement device 12031.

[0175] Distance measuring devices 12101, 12102, 12103, 12104, and 12105 are provided, for example, at positions such as the front nose, side mirrors, rear bumper, back door, and the top of the windshield inside the vehicle cabin of vehicle 12100. Distance measuring device 12101 provided on the front nose and distance measuring device 12105 provided on the top of the windshield inside the vehicle cabin mainly acquire data ahead of vehicle 12100. Distance measuring devices 12102 and 12103 provided on the side mirrors mainly acquire data on the sides of vehicle 12100. Distance measuring device 12104 provided on the rear bumper or back door mainly acquires data behind vehicle 12100. The forward data acquired by distance measuring devices 12101 and 12105 is mainly used to detect preceding vehicles, pedestrians, obstacles, traffic lights, traffic signs, etc.

[0176] 51 shows an example of the detection ranges of the distance measuring devices 12101 to 12104. Detection range 12111 indicates the detection range of the distance measuring device 12101 provided on the front nose, detection ranges 12112 and 12113 indicate the detection ranges of the distance measuring devices 12102 and 12103 provided on the side mirrors, respectively, and detection range 12114 indicates the detection range of the distance measuring device 12104 provided on the rear bumper or back door.

[0177] For example, based on the distance data obtained from the distance measuring devices 12101 to 12104, the microcomputer 12051 can calculate the distance to each three-dimensional object within the detection ranges 12111 to 12114 and the change in this distance over time (relative speed with respect to the vehicle 12100), thereby extracting as a preceding vehicle, in particular, the three-dimensional object that is the closest three-dimensional object on the path of the vehicle 12100 and traveling in approximately the same direction as the vehicle 12100 at a predetermined speed (e.g., 0 km / h or higher). Furthermore, the microcomputer 12051 can set a vehicle-to-vehicle distance to be maintained in advance in front of the preceding vehicle, and perform automatic braking control (including follow-up stop control), automatic acceleration control (including follow-up start control), etc. In this way, cooperative control can be performed for the purpose of autonomous driving, which runs autonomously without relying on driver operation.

[0178] For example, based on the distance data obtained from the distance measuring devices 12101 to 12104, the microcomputer 12051 classifies and extracts three-dimensional object data regarding three-dimensional objects into two-wheeled vehicles, ordinary vehicles, large vehicles, pedestrians, utility poles, and other three-dimensional objects, and can use the data for automatic obstacle avoidance. For example, the microcomputer 12051 distinguishes obstacles around the vehicle 12100 into obstacles that are visible to the driver of the vehicle 12100 and obstacles that are difficult to see. The microcomputer 12051 then determines the collision risk, which indicates the risk of collision with each obstacle, and when the collision risk is equal to or greater than a set value and a collision is possible, the microcomputer 12051 can provide driving assistance for collision avoidance by outputting an alarm to the driver via the audio speaker 12061 or the display unit 12062, or by performing forced deceleration or avoidance steering via the drive system control unit 12010.

[0179] The above describes an example of a mobile object control system to which the technology according to the present disclosure can be applied. The technology according to the present disclosure can be applied to the distance measurement device 12031 of the above-described configuration.

[0180] The present technology may also be configured as follows: (1) A surface-emitting device comprising a light-emitting element component including: a first structure including a first semiconductor structure; a second structure including a second semiconductor structure stacked on the first structure; a light-emitting layer disposed between the first and second structures; and an oxidation constriction layer provided within the first structure and / or the second structure, wherein a first circular defect portion having a solid layer and / or a gas layer is provided on a surface of the light-emitting element component facing the second structure; and a second defect portion surrounding the first defect portion in at least a planar view, the second defect portion also having a solid layer and / or a gas layer. (2) The surface-emitting element according to (1), wherein the first defect portion is a notch or a groove, and the second defect portion includes a notch and / or a groove. (3) The surface-emitting element according to (1) or (2), wherein a bottom surface of the first defect portion is located farther from the surface of the light-emitting element component facing the first structure than the oxidation constriction layer. (4) The surface-emitting device according to any one of (1) to (3), wherein the oxidized constriction layer has a non-oxidized region and an oxidized region surrounding the non-oxidized region, and wherein the first defect portion surrounds the non-oxidized region in a planar view. (5) The surface-emitting device according to (4), wherein a region of the light-emitting element portion on the inner periphery side of the first defect portion includes another non-oxidized region having a larger diameter than the non-oxidized region. (6) The surface-emitting device according to any one of (1) to (5), wherein the oxidized constriction layer is provided in the second structure, and a bottom surface of the first defect portion is located in the second semiconductor structure. (7) The surface-emitting device according to any one of (1) to (6), wherein the oxidized constriction layer is provided in the first structure, and a bottom surface of the first defect portion is located in the second semiconductor structure or the first semiconductor structure. (8) The surface-emitting device according to any one of (1) to (7), wherein a region of the light-emitting element portion on the outer periphery side of the first defect portion includes an oxidized region. (9) The surface light emitting device according to (8), wherein the oxidized region includes an oxide containing Al. (10) The surface light emitting device according to any one of (5) to (9), wherein the other non-oxidized region includes a compound semiconductor containing Al.(11) The surface-emitting device according to any one of (5) to (10), wherein at least one of the first and second semiconductor structures has a semiconductor multilayer film reflector, and the other non-oxidized region includes at least a part of the semiconductor multilayer film reflector. (12) The surface-emitting device according to any one of (1) to (11), wherein an electrode is provided on at least a region on the inner periphery of the first defect portion on the surface of the second semiconductor structure opposite to the light-emitting layer side. (13) The surface-emitting device according to (12), wherein the second semiconductor structure has a contact layer in contact with the electrode on the side opposite to the light-emitting layer side. (14) The surface-emitting device according to (12) or (13), wherein the electrode has an opening that serves as an emission port. (15) The surface-emitting device according to any one of (1) to (14), wherein an insulator is provided in the first defect portion. (16) The surface-emitting device according to any one of (1) to (15), wherein an insulator is provided in the second defect portion. (17) The surface-emitting device according to any one of (1) to (16), wherein the light-emitting element portion has a mesa including at least a portion of the first semiconductor structure, the light-emitting layer, the oxidized constriction layer, and the second semiconductor structure. (18) A method for manufacturing a surface-emitting element, comprising: generating a stacked body in which a first semiconductor structure, a light-emitting layer, and a second semiconductor structure are stacked in this order on a substrate, the stacked body having an oxidizable layer as an intermediate layer; forming a defect portion having a circumferential portion on the surface of the stacked body facing the second semiconductor structure; forming a circumferential groove on the surface, inner peripherally of the circumferential portion; and oxidizing the stacked body from a side. (19) The method for manufacturing a surface-emitting element according to (18), wherein the groove forming step is performed so that the bottom surface of the groove is located farther from the surface of the stacked body facing the substrate than the oxidizable layer. (20) The method for manufacturing a surface-emitting element according to (18) or (19), further comprising: forming an electrode on at least a region on the inner peripheral side of the groove on the surface of the stacked body facing the second semiconductor structure. (21) The method for manufacturing a surface light emitting device according to any one of (18) to (20), further comprising the step of removing an oxidized region formed on the outer periphery of the groove in the laminate.(22) A surface-emitting device described in any one of (1) to (17), wherein the bottom surface of the first missing portion is located farther from the surface of the light-emitting element portion on the first structure side than the bottom surface of the second missing portion.

[0181] 10, 10-1, 20, 30, 30-1, 30-2, 40, 50, 50-1, 60, 70, 70-1, 70-2, 70-3, 80, 90, 100, 119, 120, 130, 140, 150: surface-emitting element 101: substrate 102: first semiconductor multilayer film reflector (semiconductor multilayer film reflector) 103: light-emitting layer 104: oxidation constriction layer 104S: oxidized layer 104a: non-oxidized region 104b: oxidized region 105: second semiconductor multilayer film reflector (semiconductor multilayer film reflector) 106: contact layer 107: anode electrode (electrode) 108: insulating film (insulator) 109: insulating material (insulator) LE: light-emitting element portion TR1: first trench (first missing portion, groove) TR2: Second trench (second missing portion, groove) NOT: Notch (second missing portion, notch) NOT1: First notch (first missing portion, notch) NOT2: Second notch (second missing portion, notch) OA: Oxidized region NOA: Non-oxidized region ST1: First structure ST2: Second structure SS1: First semiconductor structure SS2: Second semiconductor structure

Claims

1. A surface-emitting device comprising a light-emitting element portion including a first structure including a first semiconductor structure, a second structure including a second semiconductor structure stacked on the first structure, a light-emitting layer disposed between the first and second structures, and an oxide constriction layer provided within the first structure and / or the second structure, wherein a first circumferential defect portion having a solid layer and / or a gas layer is provided on a surface of the light-emitting element portion facing the second structure, and a second defect portion surrounding the first defect portion at least in a planar view, the second defect portion having a solid layer and / or a gas layer provided.

2. The surface-emitting element according to claim 1, wherein the first defective portion is a notch or a groove, and the second defective portion includes a notch and / or a groove.

3. The surface light emitting element according to claim 1, wherein the bottom surface of the first vacant portion is located farther from the surface of the light emitting element portion on the first structure side than the oxidized constriction layer is.

4. The surface light emitting device according to claim 1, wherein the oxidized constriction layer has a non-oxidized region and an oxidized region surrounding the non-oxidized region, and in a plan view, the first defect portion surrounds the non-oxidized region.

5. The surface light emitting device according to claim 1, wherein the region of the light emitting element portion on the inner periphery side of the first missing portion includes another non-oxidized region having a larger diameter than the non-oxidized region.

6. The surface light emitting device according to claim 1, wherein the oxide constriction layer is provided within the second structure, and a bottom surface of the first defect portion is located within the second semiconductor structure.

7. The surface light emitting device according to claim 1, wherein the oxide constriction layer is provided within the first structure, and the bottom surface of the first defect is located within the second semiconductor structure or the first semiconductor structure.

8. The surface light emitting device according to claim 1, wherein a region of the light emitting element portion on the outer periphery side of the first defect portion includes an oxidized region.

9. The surface light emitting element according to claim 8, wherein the oxidized region includes an oxide containing Al.

10. The surface light emitting device according to claim 5, wherein the other non-oxidized region includes a compound semiconductor containing Al.

11. The surface light emitting device according to claim 5, wherein at least one of the first and second semiconductor structures has a semiconductor multilayer reflector, and the other non-oxidized region includes at least a portion of the semiconductor multilayer reflector.

12. The surface light emitting device according to claim 1, further comprising an electrode provided on the surface of said second semiconductor structure opposite to said light emitting layer side, at least on the area on the inner periphery side of said first defect portion.

13. The surface light emitting device according to claim 12, wherein the second semiconductor structure has a contact layer in contact with the electrode on the side opposite to the light emitting layer side.

14. The surface light emitting device according to claim 12, wherein the electrode has an opening that serves as an emission port.

15. The surface light emitting device according to claim 1, wherein an insulator is provided in the first recess.

16. The surface light emitting device according to claim 1, wherein an insulator is provided in the second recess.

17. The surface light emitting device according to claim 1, wherein the light emitting element portion has a mesa including at least a portion of the first semiconductor structure, the light emitting layer, the oxide constriction layer, and the second semiconductor structure.

18. A method for manufacturing a surface-emitting device, comprising: a step of generating a laminate in which a first semiconductor structure, a light-emitting layer, and a second semiconductor structure are laminated in this order on a substrate, the laminate having an oxidizable layer as an intermediate layer; a step of forming a defect portion having a circumferential portion on the surface of the laminate facing the second semiconductor structure; a step of forming a circumferential groove on the inner side of the circumferential portion on the surface; and a step of oxidizing the laminate from the side.

19. The method for manufacturing a surface light emitting device as described in claim 18, wherein in the step of forming the groove, the groove is formed so that the bottom surface of the groove is located farther from the substrate side surface of the laminate than the oxidizable layer.

20. The method for manufacturing a surface light emitting device according to claim 18, further comprising the step of forming an electrode on the surface of said laminate facing said second semiconductor structure, at least on the region on the inner periphery side of said groove.

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