Substrate processing device

Abstract

A substrate processing device according to one aspect of the present invention comprises: a process chamber having a reaction space therein; a chamber lid for covering the top of the process chamber; a substrate support unit arranged in the process chamber so as to support at least one substrate; a plasma source assembly including a first plasma source, which has a first toroidal channel with a first radius, a second plasma source, which has a second toroidal channel, and an insulating member; and a gas spraying unit, which faces the substrate support unit, is formed at the bottom of the plasma source assembly, and has a gas spraying plate for spraying process gas activated by the plasma source assembly onto the substrate support unit.

Description

substrate processing device

[0001] The present invention relates to semiconductor manufacturing, and more particularly, to a substrate processing device using a plasma source.

[0002] In a substrate processing device for forming a semiconductor device, a device and process are being studied that perform substrate processing by supplying activated reactants, such as radicals, into the process chamber using a plasma source outside the process chamber, such as a remote plasma generator, without directly forming plasma within the process chamber. By utilizing a remote plasma generator in this manner, desired reactants can be generated and supplied into the process chamber, and since plasma is not directly formed within the process chamber, plasma damage to the substrate can be prevented.

[0003] Furthermore, to reduce the path by which radicals generated from a remote plasma generator are supplied to the substrate, a structure is being studied that couples the plasma source to the gas injection unit of the process chamber. This structure can increase the activity ratio of radicals supplied from the plasma source to the substrate, thereby enhancing process efficiency.

[0004] However, the above-mentioned remote plasma generator or plasma source has a problem in that the uniformity of the thin film deposited on the top of the substrate deteriorates when radicals are not supplied uniformly to the center and edge regions of the circular substrate.

[0005] The present invention aims to solve the aforementioned problems, and provides a substrate processing device capable of controlling the thickness of a thin film by supplying radicals uniformly to the entire substrate or differently to each region of the substrate. However, these tasks are exemplary and the scope of the present invention is not limited thereby.

[0006] According to an aspect of the present invention for solving the technical problem of the present invention, a substrate processing device comprises: a process chamber having a reaction space formed therein; a chamber lid covering an upper portion of the process chamber; a substrate support member disposed within the process chamber to support at least one substrate; a plasma source assembly including a first plasma source coupled to the chamber lid to supply an activated process gas to the reaction space and having a first toroidal channel formed therein having a first radius from the center of the chamber lid; a second plasma source having a second toroidal channel formed therein having a second radius smaller than that of the first plasma source; and an insulating member provided between the first plasma source, the second plasma source, and the chamber lid; And a gas injection part formed on the lower part of the plasma source assembly, facing the substrate support part, and having a gas injection plate for injecting a process gas activated by the plasma source assembly onto the substrate support part; wherein the first plasma source is provided with a first opening through which the process gas activated by the first plasma source is discharged, and the second plasma source includes a second opening through which the process gas activated by the second plasma source is discharged, wherein the heights of the first opening and the second opening are different from each other.

[0007] According to an aspect of the present invention for solving the technical problem of the present invention, a substrate processing device comprises: a process chamber having a reaction space formed therein; a chamber lid covering an upper portion of the process chamber; a substrate support member disposed within the process chamber to support at least one substrate; a plasma source assembly including a first plasma source having a first toroidal channel formed therein with a first radius from a center of the chamber lid to supply an activated process gas to the reaction space; a second plasma source having a second toroidal channel formed therein with a second radius smaller than that of the first plasma source; a gas discharge plate coupled to the chamber lid and through which the activated process gas is discharged through the first plasma source and the second plasma source; and an insulating member provided between the first plasma source, the second plasma source, and the gas discharge plate. And a gas injection part formed on the lower part of the plasma source assembly, facing the substrate support part, and having a gas injection plate for injecting a process gas activated by the plasma source assembly onto the substrate support part; wherein the first plasma source is provided with a first opening through which the process gas activated by the first plasma source is discharged, and the second plasma source is provided with a second opening through which the process gas activated by the second plasma source is discharged, wherein the heights of the first opening and the second opening are different from each other.

[0008] According to the substrate processing device, the first plasma source may include a first reaction body including a plurality of first body parts each having a plurality of first gas diffusion spaces formed therein, and a plurality of first insulating parts coupled between the plurality of first body parts, the plurality of first body parts being arranged such that the plurality of first gas diffusion spaces form the first toroidal channel as a whole; a plurality of first magnetic cores each surrounding the first reaction body and spaced apart from each other along the first toroidal channel; and a plurality of first windings arranged to wind the plurality of first magnetic cores, the plurality of first windings receiving power from a power source to induce a magnetic force in the plurality of first magnetic cores; and the insulating member may include a plurality of first insulating members coupled to at least one surface of the first reaction body.

[0009] According to the substrate processing device, the first reaction body may include: a plurality of 1-1 body parts forming at least a portion of the first toroidal channel; a plurality of 1-2 body parts formed on sides of the plurality of 1-1 body parts as another portion of the first toroidal channel and having the plurality of first insulating parts coupled to the outside; a plurality of first gas inlets formed by penetrating at least a portion of the plurality of 1-1 body parts so that a process gas supplied from the outside is introduced into the plurality of first gas diffusion spaces; and a plurality of first openings formed in at least a portion of the plurality of 1-1 body parts and discharging the activated process gas from the first reaction body.

[0010] According to the substrate processing device, the second plasma source may include a second reaction body formed inside the first reaction body and including a second body part having a second gas diffusion space formed therein, and a second insulating part coupled to the second body part, the second body part being arranged such that the second gas diffusion space forms the second toroidal channel as a whole; a second magnetic core surrounding the second reaction body and arranged in a portion of the second toroidal channel; and a second winding arranged to wind the second magnetic core and receiving power from the power source to induce a magnetic force in the second magnetic core; and the insulating member may include a second insulating member coupled to at least one surface of the second reaction body.

[0011] According to the substrate processing device, the second reaction body may include: a 2-1 body portion forming a portion of the second toroidal channel; a 2-2 body portion formed to be connected to another portion of the second toroidal channel with the 2-1 body portion and having the second insulating portion coupled to the outside; at least one second gas inlet formed by penetrating at least a portion of the 2-1 body portion so that the process gas is introduced into the second gas diffusion space; and at least one second opening formed in at least a portion of the 2-1 body portion and discharging the activated process gas from the second reaction body.

[0012] According to the substrate processing device, the gas discharge plate may have a plurality of discharge ports formed at positions corresponding to first openings for discharging the process gas activated in the first plasma source from the first plasma source and second openings for discharging the process gas activated in the second plasma source from the second plasma source.

[0013] According to the substrate processing device, the gas discharge plate includes a plurality of first gas discharge ports formed at a first height to supply a process gas activated from the first plasma source toward the gas injection unit; and at least one second gas discharge port formed at a second height higher than the first height to supply a process gas activated from the second plasma source toward the gas injection unit; and the plurality of first gas discharge ports and the at least one second gas discharge port may be formed with a step difference.

[0014] According to the above substrate processing device, each of the first gas outlet and the second gas outlet may be formed in the form of a plurality of holes.

[0015] According to the substrate processing device, the plurality of first gas outlets may be formed at the bottom of the gas outlet plate of the first height so that the activated process gas is supplied to the upper side of the gas injection unit, and the at least one second gas outlet may be formed at the top of the gas outlet plate of the second height so that the activated process gas is supplied to the upper side of the gas injection unit.

[0016] According to the substrate processing device, the plurality of first gas outlets may be formed on the side of the gas outlet plate of the first height so that the activated process gas is supplied to the upper side of the gas injection unit, and the at least one second gas outlet may be formed on the upper side of the gas outlet plate of the second height so that the activated process gas is supplied to the upper side of the gas injection unit.

[0017] According to a substrate processing device according to some embodiments of the present invention, as described above, the radicals activated in the plasma source assembly are supplied directly to the substrate from above the gas injection unit, thereby reducing the movement path of the activated radicals, and the supply of the activated radicals supplied onto the substrate can be controlled by arranging the positions of the plasma sources differently for each region of the substrate.

[0018] In addition, a substrate processing device capable of controlling the thickness of a thin film by uniformly supplying radicals supplied to the upper portion of the substrate to the entire substrate area or differently supplying them to different areas of the substrate can be provided. Of course, the scope of the present invention is not limited by these effects.

[0019] FIG. 1 is a schematic diagram showing a substrate processing device according to one embodiment of the present invention.

[0020] FIG. 2 is a schematic diagram showing a substrate processing device according to another embodiment of the present invention.

[0021] FIG. 3 is a schematic top view showing a plasma source assembly according to one embodiment of the present invention.

[0022] FIG. 4 is a schematic cutaway perspective view showing the plasma source assembly of FIGS. 1 and 2.

[0023] FIG. 5 is a perspective view showing a first plasma source according to one embodiment of the present invention.

[0024] FIG. 6 is a perspective view showing a second plasma source according to one embodiment of the present invention.

[0025] Figure 7 is a top view showing a gas discharge plate according to one embodiment of the present invention.

[0026] FIG. 8 is a schematic diagram showing power delivery of a first plasma source in one embodiment of the present invention.

[0027] FIGS. 9 to 12 are cross-sectional views showing the positions and directions of the exhaust ports of the first plasma source and the second plasma source according to various embodiments of the present invention.

[0028] Hereinafter, various preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

[0029] The embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art. The following embodiments may be modified in various ways, and the scope of the present invention is not limited to the embodiments described below. Rather, these embodiments are provided to more faithfully and completely explain the present disclosure and to fully convey the spirit of the present invention to those skilled in the art.

[0030] Additionally, the thickness and size of each layer in the drawings are exaggerated for convenience and clarity of explanation. Furthermore, the embodiments of the present invention should not be construed as limited to the specific shapes of the regions illustrated in this specification, and should include, for example, changes in shape resulting from manufacturing processes.

[0031] FIG. 1 is a schematic diagram showing a substrate processing apparatus according to one embodiment of the present invention, FIG. 2 is a schematic diagram showing a substrate processing apparatus according to another embodiment of the present invention, FIG. 3 is a schematic top view showing a plasma source assembly (3000) according to one embodiment of the present invention, and FIG. 4 is a schematic cutaway perspective view showing the plasma source assembly (3000) of FIGS. 1 and 2.

[0032] First, a substrate processing device according to one embodiment of the present invention may largely include a process chamber (1000), a chamber lid (1100a), a substrate support (2000), a plasma source assembly (3000), and a gas injection unit (4000).

[0033] As illustrated in FIG. 1, a process chamber (1000) may have a reaction space (A) formed therein. The process chamber (1000) may be connected to a vacuum pump through an exhaust port so as to form a vacuum atmosphere. Furthermore, the process chamber (1000) may include an entrance for loading a substrate (S) into or unloading the substrate (S) from the reaction space (A) and a gate for opening and closing the entrance.

[0034] As shown in FIGS. 1 and 2, the chamber lid (1100a, 1100b) can be formed to cover the upper portion of the process chamber (1000).

[0035] Specifically, the chamber lid (1100a, 1100b) is formed to cover at least a portion of the process chamber (1000), and has a plurality of holes, slits, or openings, etc., penetrating at least a portion thereof so that process gas activated in the plasma source assembly (3000) coupled to the upper portion can flow to the lower portion of the chamber lid (1100).

[0036] For example, the chamber lid (1100a) may be coupled to the upper portion of the process chamber (1000) and may be coupled so that a gas injection plate (4100) is positioned between the chamber lid and the process chamber (1000).

[0037] At this time, as illustrated in FIG. 1, the chamber lid (1100a) may be coupled to a first plasma source (3100) and a second plasma source (3200) at the top, and may be formed in the shape of at least one of the plurality of holes, slits, or openings at positions corresponding to the first plasma source (3100) and the second plasma source (3200) so that the process gas activated by the first plasma source (3100) and the second plasma source (3200) can be sprayed downward.

[0038] Alternatively, as illustrated in FIG. 2, the chamber lid (1100b) may have a gas discharge plate (7000) coupled to the upper portion, and a first plasma source (3100) and a second plasma source (3200) may be coupled to the upper portion of the gas discharge plate (7000).

[0039] At this time, the chamber lid (1100b) may be formed with an opening so that the process gas activated from the first plasma source (3100) and the second plasma source (3200) coupled to the upper gas discharge plate (7000) is sprayed toward the gas injection plate (4000).

[0040] As illustrated in FIG. 1, the substrate support (2000) may be coupled to the process chamber (1000) to support at least one substrate (S) within the reaction space (A). For example, the substrate support (2000) may be installed in the process chamber (1000) to face the gas injection unit (4000). Furthermore, the substrate support (2000) may include a heater (not shown) for heating the substrate (S) therein. Since the substrate support (2000) is configured to place the substrate (S) thereon, it may also be called a substrate mounting unit, a susceptor, a substrate holder, etc.

[0041] The shape of the upper plate of the substrate support member (2000) generally corresponds to the shape of the substrate (S), but is not limited thereto, and may be provided in various shapes so as to stably secure the substrate (S). Furthermore, a shaft is connected to the substrate support member (2000), and the shaft may be connected to an external motor so as to be able to be raised and lowered. Optionally, a means for maintaining airtightness, such as a bellows pipe, may be connected between the shaft and the process chamber (1000).

[0042] In some embodiments, the substrate support (2000) may further include an electrostatic electrode to apply an electrostatic force to the substrate (S) and secure it thereon. In this case, the electrostatic electrode may generate an electrostatic force using DC power.

[0043] As illustrated in FIG. 1, the gas injection unit (4000) may be coupled to the process chamber (1000) to inject process gas supplied from the outside of the process chamber (1000) into the reaction space (A). For example, the gas injection unit (4000) may be coupled to the upper portion of the process chamber (1000) so as to face the substrate support unit (2000). The gas injection unit (4000) may supply process gas, such as a source gas, a reaction gas, an inert gas, etc., onto the substrate (S) within the reaction space (A).

[0044] A gas injection unit (4000) may be formed with a gas injection plate (4100) for injecting process gas activated by a plasma source assembly (3000) onto a substrate support unit (2000).

[0045] Specifically, the gas injection plate (4100) may be formed at the lower portion of the plasma source assembly (3000) and may include a gas injection plate (4100) for injecting a process gas activated by the plasma source assembly (3000) onto the substrate support (2000). A plurality of injection holes may be formed downward in the gas injection plate (4100). Optionally, the gas injection unit (4000) may further include a middle plate, such as a blocker plate, for injecting gas between the plasma source and the gas injection plate (4100).

[0046] The plasma source assembly (3000) is coupled to the process chamber (1000) above the substrate support (2000) to supply activated process gas to the reaction space (A), and may be coupled to, for example, a chamber lid (1100b) covering the upper portion of the process chamber (1000).

[0047] The plasma source assembly (3000) may include a first plasma source (3100) coupled to a chamber lid (1100a) and having a first toroidal channel (3114) formed therein and having a first radius from the center of the chamber lid (1100a) to supply an activated process gas to a reaction space (A), a second plasma source (3200) having a second toroidal channel (3214) formed therein and having a second radius smaller than that of the first plasma source (3100), and an insulating member provided between the first plasma source (3100), the second plasma source (3200), and the chamber lid (1100a).

[0048] Alternatively, the plasma source assembly (3000) may include a first plasma source (3100) having a first toroidal channel (3114) formed therein with a first radius from the center of the chamber lid (1100a) to supply an activated process gas to the reaction space (A), a second plasma source (3200) having a second toroidal channel (3214) formed therein with a second radius smaller than that of the first plasma source (3100), a gas discharge plate (7000) coupled to the chamber lid (1100a) and through which the activated process gas is discharged through the first plasma source (3100) and the second plasma source (3200), and an insulating member provided between the first plasma source (3100) and the second plasma source (3200) and the gas discharge plate (7000).

[0049] At this time, the insulating member may include first insulating members (3170a, 3170b, 3170c) and second insulating members (3270).

[0050] Specifically, the first plasma source (3100) coupled to the upper portion of the process chamber (1000) may be arranged to surround the second plasma source (3200). For example, the second plasma source (3200) may be coupled to the upper portion of the process chamber (1000) and arranged in a donut shape with the second radius at the center portion of the upper plate of the gas injection unit (4000), and the first plasma source (3100) may be arranged in a donut structure with the first radius surrounding the donut structure of the second plasma source (3200). This plasma source assembly (3000) enables the activated process gas to be injected throughout the entire central region and edge region of the gas injection unit (4000).

[0051] FIG. 5 is a perspective view showing a first plasma source (3100) according to one embodiment of the present invention, FIG. 6 is a perspective view showing a second plasma source (3200) according to one embodiment of the present invention, FIG. 7 is a top view showing a gas discharge plate (7000) according to one embodiment of the present invention, and FIG. 8 is a schematic diagram showing power transmission of the first plasma source (3100) according to one embodiment of the present invention.

[0052] As illustrated in FIGS. 3 and 5, the first plasma source (3100) may include a first reaction body (3110), a plurality of first magnetic cores (3130a, 3130b, 3130c), a plurality of first windings (3150a, 3150b, 3150c), and a plurality of first insulating members (3170a, 3170b, 3170c).

[0053] The first reaction body (3110) may include a first toroidal channel (3114), a plurality of first body parts, and a plurality of first insulating parts (3116a, 3116b, 3116c).

[0054] The first reaction body (3110) may be arranged such that the plurality of first body parts form a first toroidal channel (3114) as a whole, with the plurality of first gas diffusion spaces (3114a, 3114b, 3114c).

[0055] As illustrated in FIG. 5, the first reaction body (3110) may be formed by combining a plurality of first body parts, and each of the plurality of first body parts may have first gas diffusion spaces (3114a, 3114b, 3114c) formed therein.

[0056] Specifically, in the first reaction body (3110), the plurality of first body parts may be arranged such that the first gas diffusion spaces (3114a, 3114b, 3114c) form a first toroidal channel (3114) as a whole. More specifically, the plurality of first body parts may be formed to correspond to structures that are formed by carving out the overall shape of the first toroidal channel (3114) so ​​as to define the first toroidal channel (3114) as a whole. For example, when the first toroidal channel (3114) is formed as a whole in a donut shape, the plurality of first body parts may be formed to correspond to structures that are formed by carving out the donut shape into a plurality of pieces.

[0057] For example, as shown in FIG. 4, the first reaction body (3110) may be composed of three first body parts, and a fluid flow path (3114a) may be formed inside one of the plurality of first body parts, a fluid flow path (3114b) may be formed inside another one of the plurality of first body parts, and a fluid flow path (3114c) may be formed inside the remaining one of the plurality of first body parts.

[0058] That is, the first reaction body (3110) can be formed by a plurality of first body parts, and for example, the plurality of first body parts can be formed by combining a plurality of 1-1 body parts (3111a, 3111b, 3111c) and a plurality of 1-2 body parts (3112a, 3112b, 3112c), respectively.

[0059] The cross-sectional shape of the first gas diffusion spaces (3114a, 3114b, 3114c) may have various shapes such as a circle, an ellipse, a semicircle, or a polygon.

[0060] In some embodiments, the interior of the plurality of first body parts may be formed by coating an insulating material on a conductive material. For example, the plurality of first body parts may be formed by coating an insulating material, such as a metal oxide, a metal nitride, or a metal compound such as a nickel alloy, on a metal.

[0061] The first reaction body (3110) may be separated or formed as a single body and may be manufactured using a 3D printer.

[0062] The first reaction body (3110) may include a plurality of first-first body parts (3111a, 3111b, 3111c), a plurality of first-second body parts (3112a, 3112b, 3112c), a plurality of first gas inlets (3118a, 3118b, 3118c), and a plurality of first openings (3119a, 3119b, 3119c).

[0063] As illustrated in FIG. 5, the plurality of first-first body parts (3111a, 3111b, 3111c) can form at least a portion of the first toroidal channel (3114), and are tubular structures that form a flow path therein so as to form a portion of the first toroidal channel (3114).

[0064] A plurality of first-second body parts (3112a, 3112b, 3112c) are formed on the sides of the plurality of first-first body parts (3111a, 3111b, 3111c), and a plurality of first insulating parts (3116a, 3116b, 3116c) are coupled to the outside, and a tubular structure is formed inside to form another part of the first toroidal channel (3114).

[0065] A plurality of first-first body parts (3111a, 3111b, 3111c) may have a first length and a second width, and a plurality of first-second body parts (3112a, 3112b, 3112c) may have a second length and a second width. In this case, the first length may be greater than the second length, and the first width may be greater than the second width. That is, the length and width of the plurality of first-second body parts (3112a, 3112b, 3112c) are formed to be smaller than the length and width of the plurality of first-first body parts (3111a, 3111b, 3111c), so that the plurality of first magnetic cores (3130a, 3130b, 3130c) can be coupled to the outer peripheral surfaces of the plurality of first-second body parts (3112a, 3112b, 3112c).

[0066] In some embodiments, flanges (2126, 2127) may be coupled to the ends of the plurality of first-second body parts (3112a, 3112b, 3112c). For example, one side of a plurality of 1-1 body parts (3111a, 3111b, 3111c) may be connected to one side of the flanges (2127) of the plurality of 1-2 body parts (3112a, 3112b, 3112c), and first insulating parts (3116a, 3116b, 3116c) may be connected between the other side of the flanges (2126) of the plurality of 1-2 body parts (3112a, 3112b, 3112c) and the other side of the plurality of 1-1 body parts (3111a, 3111b, 3111c).

[0067] In the first reaction body (3110), the first gas diffusion spaces (3114a, 3114b, 3114c) may be in communication with the flow paths within the flanges (2126, 2127) and the first insulating portions (3116a, 3116b, 3116c) so that the first toroidal channel (3114) is formed entirely in the first reaction body (3110).

[0068] As illustrated in FIGS. 3 and 5, a plurality of first gas inlets (3118a, 3118b, 3118c) may be formed in at least a portion of a plurality of first-first body parts (3111a, 3111b, 3111c).

[0069] Specifically, the plurality of first gas inlets (3118a, 3118b, 3118c) may be formed by penetrating at least a portion of the plurality of 1-1 body parts (3111a, 3111b, 3111c) so that process gas supplied from the outside may flow into the plurality of first gas diffusion spaces (3114a, 3114b, 3114c). For example, the plurality of first gas inlets (3118a, 3118b, 3118c) may be formed on the upper portions of the plurality of 1-1 body parts (3111a, 3111b, 3111c).

[0070] The positions at which the plurality of first gas inlets (3118a, 3118b, 3118c) are formed are not limited, and may be formed on the side of the plurality of first-first body parts (3111a, 3111b, 3111c).

[0071] As illustrated in FIGS. 4 and 5, a plurality of first openings (3119a, 3119b, 3119c) are formed in at least a portion of a plurality of first-first body parts (3111a, 3111b, 3111c) and can discharge the activated process gas from the first reaction body (3110).

[0072] For example, a plurality of first openings (3119a, 3119b, 3119c) may be formed on the lower surfaces of the plurality of first-first body parts (3111a, 3111b, 3111c). The process gas introduced into the first toroidal channel (3114) through the plurality of first gas inlets (3118a, 3118b, 3118c) may be activated and discharged to the lower portion of the first plasma source (3100) through the plurality of first openings (3119a, 3119b, 3119c). For example, the plurality of first openings (3119a, 3119b, 3119c) may be formed in a slit shape.

[0073] For example, a plurality of first openings (3119a, 3119b, 3119c) may be formed on the lower surface of a plurality of first-first body parts (3111a, 3111b, 3111c) so that the activated process gas, i.e., radicals, can be supplied downward from the first plasma source (3100), as shown in FIG. 5.

[0074] Alternatively, the plurality of first openings (3119a, 3119b, 3119c) may be formed on the side surfaces of the plurality of first body parts so as to supply radicals laterally to the first plasma source (3100), as shown in FIGS. 10 and 11.

[0075] As illustrated in FIGS. 4 and 5, a plurality of first insulating members (3170a, 3170b, 3170c) can be coupled to at least one surface of the first reaction body (3110). Specifically, the plurality of first insulating members (3170a, 3170b, 3170c) are formed in a shape capable of covering the plurality of first body parts, and openings corresponding to the plurality of first openings (3119a, 3119b, 3119c) are formed, so that the activated process gas can be discharged through the openings of the plurality of first insulating members (3170a, 3170b, 3170c).

[0076] Additionally, as illustrated in FIGS. 3 and 5, the first reaction body (3110) may include a plurality of first insulating portions (3116a, 3116b, 3116c) coupled between the plurality of first body portions.

[0077] The first insulating portions (3116a, 3116b, 3116c) may be coupled between the plurality of first body portions. The first insulating portions (3116a, 3116b, 3116c) may be interposed between the plurality of first body portions so that the first body portions are not directly electrically connected to each other but are spaced apart from each other.

[0078] The first insulating portions (3116a, 3116b, 3116c) may have a flow path formed therein so that the first gas diffusion spaces (3114a, 3114b, 3114c) within the plurality of first body portions are connected to each other. The first insulating portions (3116a, 3116b, 3116c) may be formed of a suitable insulating material, such as ceramic, oxide, nitride, polymer resin, etc.

[0079] As illustrated in FIGS. 3 and 5, a plurality of first magnetic cores (3130a, 3130b, 3130c) may be spaced apart from each other along the first toroidal channel (3114) while each surrounding the first reaction body (3110).

[0080] For example, a plurality of first magnetic cores (3130a, 3130b, 3130c) may be respectively disposed on the plurality of first body parts.

[0081] Each of the plurality of first magnetic cores (3130a, 3130b, 3130c) may be formed as a single closed structure or may have a structure in which a plurality of divided parts are combined, and the plurality of first magnetic cores (3130a, 3130b, 3130c) may include a magnetic material, for example, a ferrite material.

[0082] As illustrated in FIGS. 5 and 8, a plurality of first windings (3150a, 3150b, 3150c) may be arranged to wind a plurality of first magnetic cores (3130a, 3130b, 3130c). For example, a winding (3150a) may be arranged to wind a magnetic core (3130a), a winding (3150b) may be arranged to wind a magnetic core (3130b), and a winding (3150c) may be arranged to wind a magnetic core (3130c).

[0083] The plurality of first windings (3150a, 3150b, 3150c) can receive power from the power supply unit (6000) and induce a magnetic force within the plurality of first magnetic cores (3130a, 3130b, 3130c). For example, when the plurality of first windings (3150a, 3150b, 3150c) are wound in the width direction of the plurality of first magnetic cores (3130a, 3130b, 3130c), when power is applied to the plurality of first windings (3150a, 3150b, 3150c), a magnetic force can be induced within the plurality of first magnetic cores (3130a, 3130b, 3130c) along the circumferential direction thereof.

[0084] A substrate processing device according to one embodiment of the present invention may include a power supply unit (6000) and an ignition unit.

[0085] As illustrated in FIG. 8, the power supply unit (6000) may include a power supply device and supply RF power to a plurality of first windings (3150a, 3150b, 3150c) via a resonant circuit unit (not shown) or the like. For example, the power supply unit (6000) may include a switching mode power supply (SMPS).

[0086] The ignition unit may include a plurality of flanges and a plurality of switches coupled to the plurality of first body parts on both sides of the first insulating parts (3116a, 3116b, 3116c).

[0087] As illustrated in FIGS. 3 and 6, the second plasma source (3300) may include a second reaction body (3210), a second magnetic core (3230), a first winding (3150), and a first insulating member (3170).

[0088] The second reaction body (3210) may include a second toroidal channel (3214), a second body portion, and a second insulation portion (3216).

[0089] The second reaction body (3210) may be arranged such that the second body portion forms a second toroidal channel (3214) as a whole in the second gas diffusion space.

[0090] As illustrated in FIG. 6, the second reaction body (3210) may be formed as a second body portion, and the second body portion may be formed inside the first reaction body (3110), and a second gas diffusion space may be formed inside.

[0091] Specifically, in the second reaction body (3210), the second body portion may be arranged so that the second gas diffusion space forms a second toroidal channel (3214) as a whole. More specifically, the second body portion may be formed to correspond to the overall shape of the second toroidal channel (3214) so ​​as to define the second toroidal channel (3214) as a whole, or may be formed to correspond to structures that are pieces of the overall shape of the second toroidal channel (3214), respectively.

[0092] For example, if the second toroidal channel (3214) is formed in an overall donut shape, the second body portion may be formed in such a donut shape or may be formed to correspond to structures cut into multiple pieces.

[0093] For example, as illustrated in FIGS. 3 and 6, the second reaction body (3210) is composed of two second body parts, and a fluid path is formed inside the second body parts, so that a second toroidal channel (3214) can be formed.

[0094] That is, the second reaction body (3210) can be formed by the second body part, and for example, the second body part can be formed by combining the 2-1 body part (3211) and the 2-2 body part (3212).

[0095] The cross-sectional shape of the above second gas diffusion space may have various shapes such as a circle, an ellipse, a semicircle, or a polygon.

[0096] In some embodiments, the interior of the second body portion may be formed by coating an insulating material on a conductive material, like the plurality of first body portions, for example, by coating an insulating material, such as a metal oxide, a metal nitride, a metal compound such as a nickel alloy, on a metal.

[0097] The second reaction body (3210) may be separated or formed as a single body and may be manufactured using a 3D printer.

[0098] The second reaction body (3210) may include a second-first body portion (3211), a second-second body portion (3212), a second gas inlet (3218), and a second opening (3219).

[0099] As illustrated in FIG. 6, the 2-1 body portion (3211) is a tubular structure that can form at least a portion of the second toroidal channel (3214) and forms a flow path therein so as to form a portion of the second toroidal channel (3214).

[0100] The 2-2 body part (3212) is a tubular structure formed to be connected to the 2-1 body part (3211), has a second insulating part (3216) coupled to the outside, and forms a flow path inside so as to form another part of the 2-2 toroidal channel (3214).

[0101] The 2-1 body part (3211) may have a third length and a third width, and the 2-2 body part (3212) may have a fourth length and a fourth width. In this case, the third length may be greater than the fourth length, and the third width may be greater than the fourth width. That is, the length and width of the 2-2 body part (3212) may be formed to be smaller than the length and width of the 2-1 body part (3211), so that the second magnetic core (3230) may be coupled to the outer surface of the 2-2 body part (3212).

[0102] In some embodiments, flanges may be coupled to the ends of the second-second body portion (3212).

[0103] In the second reaction body (3210), the second gas diffusion space may be in communication with the flanges and the flow path within the second insulation (3216) so that the second toroidal channel (3214) is formed throughout the second reaction body (3210).

[0104] As illustrated in FIGS. 3 and 6, the second gas inlet (3218) may be formed in at least a portion of the second-first body portion (3211).

[0105] Specifically, the second gas inlet (3218) may be formed by penetrating at least a portion of the 2-1 body portion (3211) so that a process gas supplied from the outside may flow into the second gas diffusion space. For example, the second gas inlet (3218) may be formed at the upper portion of the 2-1 body portion (3211).

[0106] The location where the second gas inlet (3218) is formed is not limited, and may be formed on the side of the 2-1 body part (3211).

[0107] As shown in FIGS. 4 and 6, the second opening (3219) is formed in at least a portion of the second-first body portion (3211) and can discharge the activated process gas from the second reaction body (3210).

[0108] For example, a second opening (3219) may be formed on the lower surface of the second-first body portion (3211). The process gas introduced into the second toroidal channel (3214) through the second gas inlet (3218) may be activated and discharged to the lower portion of the second plasma source (3200) through the second opening (3219). For example, the second opening (3219) may be formed in a slit shape.

[0109] For example, the second opening (3219) may be formed on the lower surface of the second-first body portion (3211) so that the activated process gas, i.e., radicals, can be supplied downward from the second plasma source (3200), as shown in FIG. 6.

[0110] As illustrated in FIGS. 4 and 6, the second insulating member (3270) can be coupled to at least one surface of the second reaction body (3210). Specifically, the second insulating member (3270) is formed in a shape capable of covering the second body portion, and an opening corresponding to the second opening (3219) is formed so that the activated process gas can be discharged through the opening of the second insulating member (3270).

[0111] Additionally, as illustrated in FIGS. 3 and 6, the second reaction body (3210) may include a second insulating portion (3216) coupled to the second body portion.

[0112] A second insulating member (3216) may be interposed between the second body parts so that the ends of the second body parts are not directly electrically connected to each other but are spaced apart from each other.

[0113] The second insulating portion 2 (3216) may have a flow path formed therein so that the second gas diffusion spaces within the second body portion are connected to each other. The second insulating portion (3216) may be formed of a suitable insulating material, such as ceramic, oxide, nitride, polymer resin, etc.

[0114] As illustrated in FIGS. 3 and 6, the second magnetic core (3230) may be disposed in a portion of the second toroidal channel (3214) while surrounding the second reaction body (3210).

[0115] For example, the second magnetic core 2 (3230) can be placed on the second body part.

[0116] The second magnetic core (3230) may be formed as a single closed structure or may have a structure in which a plurality of segments are combined, and the second magnetic core (3230) may include a magnetic material, for example, a ferrite material.

[0117] As illustrated in FIG. 5, the second winding (3250) can be arranged to wind the second magnetic core (3230).

[0118] Although not shown, the first winding (3250), like the plurality of first windings (3150a, 3150b, 3150c), can receive power from the power supply (6000) and induce a magnetic force within the second magnetic core (3230). For example, when the second winding (3250) is wound in the width direction of the second magnetic core (3230), when power is applied to the second winding (3250), a magnetic force can be induced within the second magnetic core (3230) along its circumferential direction.

[0119] In the plasma source assembly (3000) according to the present invention, the number of the plurality of first body parts of the first plasma source (3100) is exemplarily shown, and may be selected as two or more. Furthermore, depending on the number of the plurality of first body parts, the number of the plurality of first magnetic cores (3130a, 3130b, 3130c), the plurality of first windings (3150a, 3150b, 3150c), and the plurality of first insulating parts (3116a, 3116b, 3116c) may vary.

[0120] According to the first plasma source (3100), when power is applied from the power supply unit (6000) to the plurality of first windings (3150a, 3150b, 3150c), a magnetic force is induced in the plurality of first magnetic cores (3130a, 3130b, 3130c), and a current can be induced in the first toroidal channel (3114) penetrating the inside of the plurality of first magnetic cores (3130a, 3130b, 3130c) by this induced magnetic force. The gas can be activated in the first toroidal channel (3114) by this current, thereby forming a plasma atmosphere.

[0121] In the first plasma source (3100), a magnetic force is induced from a current flowing in a plurality of first windings (3150a, 3150b, 3150c) to a plurality of first magnetic cores (3130a, 3130b, 3130c), and a structure in which a current is induced in a first toroidal channel (3114) by this induced magnetic force can correspond to the principle of a transformer, and the second plasma source (3200) can be driven in the same manner.

[0122] In this respect, the plasma source of the present invention may be called a transformer coupled plasma (TCP) device or a magnetic induction plasma device.

[0123] In some embodiments, the plurality of first windings (3150a, 3150b, 3150c) may function as primary coils, and the first toroidal channel (3114) defined by the plurality of first body parts may function as secondary coils. In this respect, the plurality of first windings (3150a, 3150b, 3150c) may be referred to as primary coils or primary windings, and the current flowing in the plurality of first windings (3150a, 3150b, 3150c) may be referred to as primary current. Furthermore, the current induced in the first toroidal channel (3114) may also be referred to as secondary current.

[0124] When a secondary current is induced in the first toroidal channel (3114), the voltage can be applied mostly to both ends of the first insulators (3116a, 3116b, 3116c). Therefore, ignition of the plasma in the first toroidal channel (3114) can be initiated within the first insulators (3116a, 3116b, 3116c), and the second plasma source (3200) can also be ignited in the same manner.

[0125] A substrate processing device according to one embodiment of the present invention may include a power supply unit (6000) and an ignition unit.

[0126] As illustrated in FIG. 8, the power supply unit (6000) may include a power supply device and supply RF power to a plurality of first windings (3150a, 3150b, 3150c) via a resonant circuit unit (not shown) or the like. For example, the power supply unit (6000) may include a switching mode power supply (SMPS).

[0127] The ignition unit may include a plurality of flanges and a plurality of switches coupled to the plurality of first body parts on both sides of the first insulating parts (3116a, 3116b, 3116c).

[0128] In a substrate processing device according to one embodiment of the present invention, the supply surface of the first plasma source (3100) through which the process gas is supplied to the gas injection unit (4000) and the supply surface of the second plasma source (3200) can be formed on different planes.

[0129] For example, as illustrated in FIGS. 1 and 4, the first plasma source (3100) and the second plasma source (3200) may be formed at different heights from the top of the process chamber (1000). More specifically, the first plasma source (3100) formed on the outside may be formed lower than the second plasma source (3200) formed on the inside, and may be formed closer to the gas injection unit (4000).

[0130] Thus, the amount of radicals applied to the edge of the substrate (S) and the amount of radicals applied to the center can be uniformly controlled.

[0131] More specifically, according to one embodiment of the present invention, the substrate processing device may include a gas discharge plate (7000), as illustrated in FIG. 2.

[0132] As shown in FIGS. 1 and 4, the gas discharge plate (7000) can be coupled to the first plasma source (3100) and the second plasma source (3200).

[0133] The gas discharge plate (7000) may have a plurality of discharge ports formed at positions corresponding to the first openings (3119a, 3119b, 3119c) for discharging the process gas activated in the first plasma source (3100) from the first plasma source (3100) and the second openings (3219) for discharging the process gas activated in the second plasma source (3200) from the second plasma source (3200).

[0134] The gas discharge plate (7000) may be formed with a plurality of holes for discharging the activated process gas from the first toroidal channel (3114) and the second toroidal channel (3214).

[0135] The gas discharge plate (7000) can discharge the activated process gas, i.e., radicals, downward through the plurality of holes.

[0136] The gas exhaust plate (7000) may be formed with a plurality of exhaust ports, and the plurality of exhaust ports may include a plurality of first gas exhaust ports (7100) and at least one second gas exhaust port (7200).

[0137] A plurality of first gas outlets (7100) may be formed at a first height (H1) to supply a process gas activated from a first plasma source (3100) toward a gas injection unit (4000), and at least one second gas outlet (7200) may be formed at a second height (H2) higher than the first height (H1) to supply a process gas activated from a second plasma source (3200) toward a gas injection unit (4000). At this time, the plurality of first gas outlets (7100) and the at least one second gas outlet (7200) may be formed with a step difference.

[0138] Specifically, a plurality of first gas outlets (7100a, 7100b, 7100c) may be formed at the bottom of a gas outlet plate (7000) of a first height (H1) so that the activated process gas is supplied to the upper side of the gas injection unit, and at least one second gas outlet (7200) may be formed at the top of the gas outlet plate (7000) of a second height (H2) so that the activated process gas is supplied to the upper side of the gas injection unit (4000).

[0139] For example, as illustrated in FIG. 8, a plurality of first gas outlets (7100a, 7100b, 7100c) are formed at the bottom of a gas outlet plate (7000) of a first height (H1), and at least one second gas outlet (7200) is formed at the top of the gas outlet plate (7000) of a second height (H2) so as to inject an activated process gas downward where a gas injection unit (4000) is formed.

[0140] A plurality of first gas outlets (7100) may be formed through the gas outlet plate (7000) and may be formed so that the process gas activated in the first plasma source (3100) can be supplied to the lower portions of the plurality of first body parts from the first gas diffusion spaces (3114a, 3114b, 3114c).

[0141] At least one second gas outlet (7200) may be formed through the gas outlet plate (7000) and may be formed so that a process gas activated from the second plasma source (3200) can be supplied from the second gas diffusion space to the lower portion of the second body portion.

[0142] The plurality of first gas outlets (7100a, 7100b, 7100c) and at least one second gas outlet (7200) may be formed in the shape of a cylinder, a cone, a pyramid, or the like. That is, the plurality of first body parts and the second body part may be formed in the same size from the inside to the outside, or the holes may be formed so that they become progressively larger.

[0143] Accordingly, the radicals are discharged to the outside of the plurality of first body parts and the second body part, and particles can be prevented from flowing into the first gas diffusion spaces (3114a, 3114b, 3114c) and the second gas diffusion space on the inside of the plurality of first body parts and the second body part, and the amount of radicals discharged can be controlled according to the size and shape of the plurality of first gas outlets (7100a, 7100b, 7100c) and at least one second gas outlet (7200).

[0144] According to various embodiments of the present invention, a plasma source assembly (3000) including a first plasma source (3100) and a second plasma source (300) can be coupled to the process chamber (1000) at various locations.

[0145] FIGS. 9 to 12 are cross-sectional views showing the positions and directions of the exhaust ports of the first plasma source (3100) and the second plasma source (3200) according to various embodiments of the present invention.

[0146] A gas discharge plate (7000) can be coupled to correspond to a plurality of first openings (3119a, 3119b, 3119c) and second openings (3219) at the lower portions of the first plasma source (3100) and the second plasma source (300).

[0147] The gas discharge plate (7000) is formed with a plurality of first gas discharge ports (7100) and at least one second gas discharge port (7200) formed on different planes with steps, and thus radicals can be injected through the plurality of first gas discharge ports (7100) and at least one second gas discharge port (7200) formed on different planes.

[0148] A plurality of first gas outlets (7100a, 7100b, 7100c) are formed on the side of the gas outlet plate (7000) at the first height (H1) so that the activated process gas is supplied to the upper side of the gas injection unit (4000), and at least one second gas outlet (7200) can be formed on the upper side of the gas outlet plate (7000) at the second height (H2) so that the activated process gas is supplied to the upper side of the gas injection unit (4000).

[0149] For example, as illustrated in FIG. 9, in a plasma source assembly (3000) coupled to the upper portion of a process chamber (1000), a plurality of first openings (3119a, 3119b, 3119c) of a first plasma source (3100) may be formed on a lower surface of the first plasma source (3100), and a second opening (3219) of a second plasma source (300) may be formed on a lower surface of the second plasma source (300), such that the process gas may be supplied downwardly of the plasma source.

[0150] That is, a plurality of first openings (3119a, 3119b, 3119c) and second openings (3219) are formed with steps on different planes at the top of the process chamber (1000) so as to supply radicals toward the gas injection unit (4000). At this time, the first plasma source (3100) formed in the edge region of the process chamber (1000) is formed closer to the lower plate mounting unit (2000) so that sufficient radicals can be supplied to the edge region.

[0151] As illustrated in FIG. 10, in a plasma source assembly (3000) coupled to the upper portion of a process chamber (1000), a plurality of first openings (3119a, 3119b, 3119c) may be formed on a side of the first plasma source (3100) so that the process gas is supplied toward the side, and a second opening (3219) may be formed downward so that the process gas is supplied downward.

[0152] Specifically, a gas discharge plate (7000) can be coupled to correspond to a plurality of first openings (3119a, 3119b, 3119c) and a second opening (3219) at the lower portions of the first plasma source (3100) and the second plasma source (300), and at this time, the plurality of first openings (3119a, 3119b, 3119c) and the second opening (3219) are formed on different planes and in different directions, so that radicals can be injected through the plurality of first gas discharge ports (7100) and at least one second gas discharge port (7200).

[0153] For example, a second plasma source (3200) formed to surround the upper portion of the central region at the top of the process chamber (1000) may be formed higher than a first plasma source (3100) formed to surround the edge region at the top of the process chamber (1000). At this time, the first plasma source (3100) formed in the edge region is formed closer toward the edge of the lower substrate support member (2000), and is sprayed from the upper portion of the substrate support member (2000) to the edge region, so that sufficient radicals can be supplied to the edge region of the substrate (S).

[0154] As illustrated in FIG. 11, in a plasma source assembly (3000) coupled to the upper portion of a process chamber (1000), a plurality of first openings (3119a, 3119b, 3119c) may be formed downward and laterally on the lower surface and side surface of the first plasma source (3100) so that the process gas is supplied toward the lower surface and side surface, and a second opening (3219) may be formed downward so that the process gas is supplied downward.

[0155] Specifically, a gas discharge plate (7000) may be coupled to correspond to a plurality of first openings (3119a, 3119b, 3119c) and a second opening (3219) at the lower portions of the first plasma source (3100) and the second plasma source (300), and at this time, at least one second gas discharge port (7200) may be formed facing downward, and a plurality of first gas discharge ports (7100) may be formed facing sideways and downward.

[0156] For example, the second plasma source (300) formed to surround the upper part of the central region in the upper part of the process chamber (1000) is formed higher than the first plasma source (3100) formed to surround the upper part of the edge region in the upper part of the process chamber (1000), and at this time, the first plasma source (3100) formed in the edge region not only injects the process gas downward but also injects it sideways to supply a large amount of radicals to the edge region, so that sufficient radicals can be supplied to the edge region.

[0157] In addition, the first plasma source (3100) is coupled to the side of the process chamber (1000) and is formed to surround the side of the process chamber (1000), and the second plasma source (3200) is coupled to the upper surface of the process chamber (1000), so that radicals can be sprayed from the first plasma source (3100) to the side of the substrate support (2000), thereby ensuring that sufficient radicals are supplied to the edge region of the substrate (S).

[0158] As illustrated in FIG. 12, in a plasma source assembly (3000) coupled to the upper portion of a process chamber (1000), a plurality of first gas outlets (7100) may be formed to be inclined at a predetermined angle with respect to at least one second gas outlet (7200) so that the process gas is supplied inclined toward a substrate placed below, and a second opening (3219) may be formed downward so that the process gas is supplied downward.

[0159] Specifically, the gas discharge plate (7000) is formed as a curved plane having an incline, so that the first plasma source (3100) and the second plasma source (3200) can be coupled to the upper portion. At this time, the plurality of first openings (3119a, 3119b, 3119c) and the second opening (3219) are formed to be inclined, and the extensions thereof are formed to be inclined at a predetermined angle, so that radicals can be injected through the plurality of first gas discharge ports (7100) and at least one second gas discharge port (7200).

[0160] For example, the second plasma source (3200) formed surrounding the upper part of the central region in the upper part of the process chamber (1000) may be formed higher than the first plasma source (3100) formed surrounding the upper part of the edge region in the upper part of the process chamber (1000). At this time, the first plasma source (3100) formed in the edge region injects the process gas at an angle toward the lower center, so that it gets closer to the substrate (S) as it goes toward the edge of the lower substrate support member (2000), so that sufficient radicals can be supplied to the edge region of the substrate (S).

[0161] As illustrated in FIGS. 9 to 12, a plurality of first gas outlets (7100) and at least one second gas outlet (7200) are formed with steps on different planes or are formed at a predetermined angle, so that the edge region of the substrate support (2000) is closer to the plasma source assembly (3000), so that even if the same power is supplied to the first plasma source (3100) and the second plasma source (3200), sufficient radicals can be supplied to the edge region.

[0162] In a substrate processing device according to one embodiment of the present invention, a process gas can be supplied from a process gas supply unit (5000) formed outside a process chamber (1000) to a first plasma source (3100) and a second plasma source (3200).

[0163] For example, as illustrated in FIG. 1, the same process gas can be supplied to the first plasma source (3100) and the second plasma source (3200) from a single formed process gas supply unit (5000).

[0164] The process gas supply unit (5000) may be individually formed to include each gas so as to be able to supply the source gas, the reaction gas, and the inert gas, respectively. At this time, in the process gas supply unit (5000), when the plasma source is ignited, the process gas may be supplied from a gas supply unit containing an inert gas such as Ar, He, H2, N2, etc.

[0165] In addition, after ignition, while maintaining plasma in the process gas supply unit (5000), the source gas (or reaction gas) and the inert gas may be supplied singly or simultaneously from each gas supply unit.

[0166] A process gas supply unit (5000) of a substrate processing device according to another embodiment of the present invention is composed of a first process gas supply unit (5100) and a second process gas supply unit (5200), which are respectively connected to a first plasma source (3100) and a second plasma source (3200) so that different gases can be supplied.

[0167] For example, as illustrated in FIG. 9, a first process gas may be supplied from a first process gas supply unit (5100) to a first plasma source (3100), and a second process gas different from the first process gas may be supplied from a second process gas supply unit (5200) to a second plasma source (3200).

[0168] At this time, the first process gas supply unit (5100) and the second process gas supply unit (5200) are connected to the first plasma source (3100) and the second plasma source (3200), respectively, so that the first process gas can be supplied to the first plasma source (3100) and the second process gas can be supplied to the second plasma source (3200).

[0169] In addition, the first process gas supply unit (5100) and the second process gas supply unit (5200) may be connected to the first plasma source (3100) and the second plasma source (3200) through the same pipe, and a first inflow control valve (5110) and a second inflow control valve (5210) may be installed. Accordingly, the first process gas may be selectively supplied to the first plasma source (3100) and the second plasma source (3200), and the second process gas may be selectively supplied to the first plasma source (3100) and the second plasma source (3200).

[0170] Additionally, a plurality of first valves (5111a, 5111b) may be formed to supply process gas to a plurality of first gas inlets (3118a, 3118b, 3118c) formed in the first plasma source (3100).

[0171] The substrate processing device described above can be used as a thin film deposition device, such as an atomic layer deposition (ALD) device or a chemical vapor deposition (CVD) device.

[0172] According to the above substrate processing device, since the plasma source assembly (3000) is coupled to the upper portion of the gas injection unit (4000), an activated process gas, for example, radicals, can be directly supplied to the substrate (S), thereby reducing the supply path of the radicals and controlling the path through which the radicals are supplied depending on the position of the substrate (S). Accordingly, when the gas injection unit (4000) is used, the radicals can be uniformly supplied to the substrate, thereby increasing process reliability, compared to when a conventional remote plasma device is used.

[0173] While the present invention has been described with reference to the embodiments illustrated in the drawings, these are merely exemplary, and those skilled in the art will appreciate that various modifications and equivalent alternative embodiments are possible. Therefore, the true scope of technical protection of the present invention should be determined by the technical spirit of the appended claims.

Claims

1. A process chamber with a reaction space formed inside; A chamber lid covering the upper portion of the process chamber; A substrate support positioned within the process chamber to support at least one substrate; A plasma source assembly including a first plasma source coupled to the chamber lid to supply an activated process gas to the reaction space and having a first toroidal channel formed therein and having a first radius from the center of the chamber lid, a second plasma source having a second toroidal channel formed therein and having a second radius smaller than that of the first plasma source, and an insulating member provided between the first plasma source, the second plasma source, and the chamber lid; and A gas injection unit formed at a lower portion of the plasma source assembly and facing the substrate support, wherein a gas injection plate is formed for injecting a process gas activated by the plasma source assembly onto the substrate support; Including, A substrate processing device, wherein the first plasma source includes a first opening through which a process gas activated by the first plasma source is discharged, and the second plasma source includes a second opening through which a process gas activated by the second plasma source is discharged, wherein the heights of the first opening and the second opening are different from each other.

2. A process chamber with a reaction space formed inside; A chamber lid covering the upper portion of the process chamber; A substrate support positioned within the process chamber to support at least one substrate; A plasma source assembly including a first plasma source having a first toroidal channel formed with a first radius from the center of the chamber lid to supply an activated process gas to the reaction space, a second plasma source having a second toroidal channel formed with a second radius smaller than that of the first plasma source, a gas discharge plate coupled to the chamber lid and through which the activated process gas is discharged through the first plasma source and the second plasma source, and an insulating member provided between the first plasma source and the second plasma source and the gas discharge plate; and A gas injection unit formed at a lower portion of the plasma source assembly and facing the substrate support, wherein a gas injection plate is formed for injecting a process gas activated by the plasma source assembly onto the substrate support; Including, A substrate processing device, wherein the first plasma source includes a first opening through which a process gas activated by the first plasma source is discharged, and the second plasma source includes a second opening through which a process gas activated by the second plasma source is discharged, wherein the heights of the first opening and the second opening are different from each other.

3. In paragraph 1 or 2, The above first plasma source is, A first reaction body comprising a plurality of first body parts each having a plurality of first gas diffusion spaces formed therein, and a plurality of first insulating parts coupled between the plurality of first body parts, wherein the plurality of first body parts are arranged such that the plurality of first gas diffusion spaces collectively form the first toroidal channel; A plurality of first magnetic cores spaced apart from each other along the first toroidal channel, each surrounding the first reaction body; and A plurality of first windings arranged to wind the plurality of first magnetic cores and receiving power from a power supply to induce a magnetic force in the plurality of first magnetic cores; Including, The above insulating material is, A plurality of first insulating members joined to at least one surface of the first reaction body; A substrate processing device comprising:

4. In paragraph 3, The above first reaction body is, A plurality of first-first body parts forming at least a portion of the first toroidal channel; As another part of the first toroidal channel, a plurality of first-second body parts formed on the side of the plurality of first-first body parts and having the plurality of first insulating parts coupled to the outside; A plurality of first gas inlets formed by penetrating at least a portion of the plurality of first-first body parts so that process gas supplied from the outside flows into the plurality of first gas diffusion spaces; and A plurality of first openings formed in at least a portion of the plurality of first-first body parts and discharging the activated process gas from the first reaction body; A substrate processing device comprising:

5. In paragraph 1 or 2, The second plasma source is, A second reaction body comprising a second body part formed inside the first reaction body and having a second gas diffusion space formed therein, and a second insulating part coupled to the second body part, wherein the second body part is arranged such that the second gas diffusion space forms the second toroidal channel as a whole; a second magnetic core disposed in a portion of the second toroidal channel, surrounding the second reaction body; and A second winding arranged to wind the second magnetic core and induce a magnetic force within the second magnetic core by receiving power from the power supply unit; Including, The above insulating material is, A second insulating member coupled to at least one surface of the second reaction body; A substrate processing device comprising:

6. In paragraph 5, The second reaction body is, A second body part forming a part of the second toroidal channel; A 2-2 body part formed to be connected to the 2-1 body part through another part of the 2nd toroidal channel, and having the 2nd insulating part coupled to the outside; At least one second gas inlet formed by penetrating at least a portion of the second-1 body part so that the process gas flows into the second gas diffusion space; and At least one second opening formed in at least a portion of the second-first body portion and discharging the activated process gas from the second reaction body; A substrate processing device comprising:

7. In paragraph 2, The above gas discharge plate, A substrate processing apparatus, wherein a plurality of discharge ports are formed at positions corresponding to first openings for discharging the process gas activated in the first plasma source from the first plasma source and second openings for discharging the process gas activated in the second plasma source from the second plasma source.

8. In paragraph 7, The above gas discharge plate, A plurality of first gas outlets formed at a first height to supply a process gas activated from the first plasma source to the gas injection unit; and At least one second gas outlet formed at a second height higher than the first height to supply a process gas activated from the second plasma source toward the gas injection unit; Including, A substrate processing device, wherein the plurality of first gas outlets and the at least one second gas outlet are formed with a step.

9. In paragraph 8, A substrate processing device, characterized in that each of the first gas exhaust port and the second gas exhaust port is formed in the form of a plurality of holes.

10. In paragraph 8, The above plurality of first gas outlets, An activated process gas is formed at the bottom of the gas discharge plate of the first height so that it is supplied to the upper side of the gas injection unit, At least one of the second gas outlets, A substrate processing device, wherein an activated process gas is formed on the upper side of the gas discharge plate of the second height so that the activated process gas is supplied to the upper side of the gas injection unit.

11. In paragraph 8, The above plurality of first gas outlets, The activated process gas is formed on the side of the gas discharge plate of the first height so that it is supplied to the upper part of the gas injection unit, At least one of the second gas outlets, A substrate processing device, wherein an activated process gas is formed on the upper side of the gas discharge plate of the second height so that the activated process gas is supplied to the upper side of the gas injection unit.

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