Preparation method for perovskite solar cell module and large-area uniform perovskite thin film

Abstract

A preparation method for a perovskite solar cell module and a large-area uniform perovskite thin film. The structure of the perovskite thin film solar cell module can be divided into a substrate, a hole transport layer, an interface modification layer, a perovskite absorption layer, an electron transport layer, a hole blocking layer, and a back electrode from bottom to top. The perovskite absorption layer is prepared by increasing DMF pre-wetting. The problems of a thin film uniformity requirement and a hole defect in the preparation process of a p-i-n trans-structure large-area perovskite thin film solution method are solved.

Description

A perovskite solar cell module and a method for preparing a large-area uniform perovskite film Technical Field

[0001] The present application relates to the technical field of solar cell preparation, and more specifically, to a perovskite solar cell assembly and a method for preparing a large-area uniform perovskite film. Background Art

[0002] In recent years, metal halide perovskites have garnered widespread attention from both academia and industry. Their exceptional optoelectronic properties, including high absorption coefficients, long carrier lifetimes, and high photogenerated carrier mobility, have led to their application in solar cell technology since 2009. Their photoelectric conversion efficiency has rapidly climbed from 3.8% to 26.1%, approaching the record high of 26.2% for single-cell monocrystalline silicon solar cells. The chemical formula of metal halide perovskites is ABX₃, where A is an organic or inorganic cation such as methylamine (MA), formamidine (FA), or cesium (Cs); B is a divalent metal cation such as lead (Pb) or tin (Sn); and X is a halide ion such as iodine (I), bromine (Br), or thiocyanate (SCN). This means that metal halide perovskites are composed of elements that are relatively abundant and readily available in the Earth's crust, making them amenable to large-scale production. Furthermore, because metal halide perovskites are ionic crystals, their thin films can be prepared using a solution-based process and mass-produced in a roll-to-roll manner, effectively reducing production costs. These advantages make metal halide perovskite solar cells promising to reduce the cost of solar cell power generation and shorten the investment payback period, thereby increasing the proportion of photovoltaic power generation in the energy supply structure.

[0003] Metal halide perovskite solar cells with a pin-inverted structure are one of the most promising next-generation thin-film photovoltaic technologies for industrialization due to their excellent photovoltaic performance, low material costs, low-cost solution-based fabrication, and suitability for flexible substrates and tandem cell fabrication. Large-scale fabrication of high-efficiency metal halide perovskite solar cells is a key factor in the industrialization of perovskite photovoltaic devices. However, current large-area perovskite solar cells commonly suffer from issues such as insufficient film uniformity and void defects. In particular, the presence of voids in large-area perovskite films significantly impacts device performance and increases degradation under illumination, hindering the industrialization of perovskite solar cells. Void problems are typically caused by volume collapse and the presence of bubbles during annealing, which are often related to substrate wettability or the solvent and antisolvent. For example, a Science article by Huang Jinsong's group speculates that DMSO, a commonly used solvent additive in inverted perovskite devices, can cause voids in the perovskite. Low DMSO content accelerates the crystallization rate of the film, leading to void formation. When the DMSO content is too high, the volatilization of DMSO will be delayed because the crystallization direction of the film is from top to bottom, resulting in about 2% DMSO remaining at the bottom of the perovskite, causing holes.

[0004] The shortcomings of the existing technology mainly include:

[0005] 1) The current large-area perovskite film spin-coating process is not suitable for evenly spreading the perovskite precursor solution over the entire substrate area due to the large substrate area. This process also easily produces many voids, which affect the performance of the device. It is necessary to improve the substrate surface wettability to enhance the spreading ability of the perovskite precursor solution on the substrate. This has resulted in a uniform, void-free large-area perovskite film.

[0006] 2) Due to the fragility of the perovskite structure, prolonged thermal annealing can lead to film decomposition and device stability. Annealing at high temperature for a short period of time can induce solvent removal to establish supersaturated conditions, which will accelerate perovskite nucleation and increase nucleus density. Annealing immediately after spin coating the precursor solution will lead to rapid volume shrinkage, without sufficient time for the solute to diffuse, resulting in a rough surface and void defects. Gradient thermal annealing is required to reduce the evaporation rate of the organic reagent and slow down the film crystallization process;

[0007] 3) Due to the small process time window for perovskite thin film crystallization in the perovskite antisolvent spin coating process, the amount of antisolvent required increases with the increase of module area size. It is difficult to stably and effectively drip the perovskite precursor solution on the entire substrate within a narrow time window. It is necessary to optimize the antisolvent dripping method to achieve stable, high-quality, large-area perovskite crystallization film formation.

[0008] Summary of the Invention

[0009] The present disclosure provides a perovskite solar cell module and a method for preparing a large-area uniform perovskite film, which solves the film uniformity requirement and hole defect problems in the solution method preparation process of a large-area perovskite film with a PIN inverted structure.

[0010] In a first aspect, the present disclosure provides a perovskite solar cell module, wherein the structure of the perovskite thin-film solar cell module can be divided into a substrate, a hole transport layer, an interface modification layer, a perovskite absorption layer, an electron transport layer, a hole blocking layer, and a back electrode from bottom to top; the perovskite absorption layer is prepared by adding DMF pre-infiltration.

[0011] By pre-wetting with DMF, the wettability of the substrate surface is improved, the possibility of bubble generation during the droplet addition process is greatly reduced, and the anti-solvent droplet addition method is optimized so that it can stably and effectively act on the perovskite precursor solution even in a narrow process window. In addition, a gradient thermal annealing method is used to improve the volume collapse of the film during the annealing process, thereby avoiding the generation of pore defects in the film. In this way, large-area perovskite components with a pin inverse structure are prepared, which solves the film uniformity requirements in the solution method preparation process of large-area perovskite films with a pin inverse structure and effectively solves the pore problem in the perovskite film.

[0012] In a second aspect, the present disclosure provides a perovskite solar cell module and a method for preparing a large-area uniform perovskite film, comprising the following steps:

[0013] 1) Laser scribing P1 on the substrate;

[0014] 2) coating a precursor of a hole transport layer material on the base electrode to prepare a hole transport layer;

[0015] 3) coating a precursor of an interface modification layer material on the hole transport layer to prepare an interface modification layer;

[0016] 4) coating a precursor of a perovskite thin film layer on the interface modification layer to prepare a perovskite thin film layer;

[0017] 5) coating a precursor of an electron transport layer material on the perovskite thin film layer to prepare an electron transport layer;

[0018] 6) coating a precursor of a hole blocking layer material on the electron transport layer to prepare a hole blocking layer;

[0019] 7) Laser scribing P2 on the back side of the hole blocking layer;

[0020] 8) coating a back electrode material on the hole blocking layer to prepare a back electrode, wherein the back electrode is an Ag electrode;

[0021] 9) Laser scribing a P3 line on the Ag electrode.

[0022] This application reduces the difficulty of preparing large-area perovskite solar cell modules with a PIN inverted structure and improves the performance of the corresponding photovoltaic devices. The DMF pre-wetting method used in this application can effectively improve the wettability of the substrate surface and enhance the uniformity of the film. At the same time, the optimization of the anti-solvent droplet addition method and gradient thermal annealing largely solves the problem of holes commonly found in large-area perovskite films, improves the defect problem of perovskite films, and improves the crystallization quality of large-area perovskite films.

[0023] Preferably, in step (1), a wavelength of 355 nm and a power of 70 are used, repeated 4 times, and each P1 line is 5 mm apart.

[0024] Preferably, in step (2), the coating is one of spin coating, evaporation, slit coating, blade coating and screen printing; step (2) further comprises annealing treatment after coating, the annealing temperature is 100-120° C.; the annealing time is 10-15 min.

[0025] Preferably, in step (2), the base electrode needs to be washed and dried before use, specifically comprising the following steps: ultrasonically cleaning the base electrode with transparent glass cleaning fluid, deionized water, acetone, and isopropyl alcohol for 15-30 minutes, then drying it in an oven at 80-100°C, cooling it, and then treating it with an ultraviolet ozone cleaner or a plasma cleaner for 15-20 minutes before use.

[0026] Preferably, in step (3), the coating is performed by spin coating, and before coating the perovskite, the DMF solvent is first spin-coated once according to the perovskite absorption layer process, and the DMF solvent is dripped twice at equal intervals during the spin coating process for pre-wetting, and then the perovskite layer is spin-coated, wherein the anti-solvent pipette tip is cut with a nozzle of 3-4 mm in diameter, and the nozzle of the pipette tip is 0.5 cm-1 cm away from the substrate surface, and is continuously dripped on the surface of the perovskite film in the form of water within 1-2 seconds.

[0027] Preferably, the step (3) further comprises a gradient annealing treatment after coating, wherein the annealing temperature is first annealed at 60°C for 5 minutes and then annealed at 100°C for 25 minutes.

[0028] Preferably, the step (4) further comprises an annealing treatment after coating, the temperature of the annealing treatment is 100-120° C., and the time of the annealing treatment is 20-30 minutes.

[0029] Preferably, in the step (5), the coating is performed by evaporation, and the thickness of the electron transport layer is 30 nm; in the step (6), the coating is performed by evaporation, and the thickness of the hole blocking layer is 8 nm.

[0030] Preferably, in step (7), a wavelength of 355, a power of 30, a spacing of 0.05 mm with the P1 line is used, and each P2 line is repeated 30 times, each 5 mm apart, and the above steps are repeated once after completion; in step (9), a wavelength of 355, a power of 45, a spacing of 0.05 mm with the P2 line is used, and each P3 line is repeated 30 times, each 5 mm apart.

[0031] Preferably, in step (8), the thickness of the Ag electrode layer is 200-300 nm.

[0032] In summary, this application has the following beneficial effects:

[0033] 1. Since the present application is different from the general anti-solvent spin coating process, a DMF pre-wetting process step is added before spin coating the perovskite film. Specifically, before spin coating the perovskite, the DMF solvent is first spin-coated once according to the perovskite absorption layer selection process. During the spin coating process, the DMF solvent is added twice at equal intervals for pre-wetting, and then the perovskite layer is immediately spin-coated;

[0034] 2. In this application, the anti-solvent addition method is optimized to achieve high-quality and stable perovskite films. That is, the anti-solvent pipette tip is cut with a nozzle of 3-4 mm in diameter, the nozzle of the pipette tip is 0.5 cm-1 cm away from the substrate surface, and the anti-solvent is continuously dripped onto the film surface in a water stream within 1-2 seconds;

[0035] 3. This application adopts a gradient thermal annealing method, first performing a short pre-annealing at a lower temperature, and then annealing at a high temperature to avoid volume shrinkage during the high-temperature annealing process, thereby reducing the evaporation rate of the organic reagent and slowing down the crystallization of the film.

[0036] It should be understood that the foregoing general description and the following detailed description are merely exemplary and explanatory and are not intended to limit the scope of protection of the present disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] FIG1 is a structural diagram of a device of the present application;

[0038] FIG2 is a diagram showing the uniformity and hole defects of the perovskite film before the method of the present application is used;

[0039] FIG3 is a diagram showing the uniformity and hole defects of the perovskite film after using the method of the present application;

[0040] FIG4 is a diagram of module efficiency of Example 1 of the present application;

[0041] FIG5 is a diagram of module efficiency of Example 2 of the present application;

[0042] FIG6 is a diagram of module efficiency of Example 3 of the present application.

[0043] DETAILED DESCRIPTION

[0044] The present application is further described in detail below with reference to the examples. It is particularly noted that if no specific conditions are specified in the following examples, the reactions are carried out according to conventional conditions or the conditions recommended by the manufacturer. Unless otherwise specified, the raw materials used in the following examples can be obtained from common commercial sources.

[0045] Example

[0046] Example 1

[0047] In this embodiment, DMF pre-infiltration is performed once, and the pre-annealing temperature is 60° C., and the steps are specifically included:

[0048] (1) Select 5 cm × 5 cm indium tin oxide (ITO) conductive glass as the base electrode and treat it with a UV ozone machine or plasma cleaner for 20 minutes.

[0049] (2) Laser scribing P1 on the substrate, using a wavelength of 355 nm, a power of 70, repeated 4 times, with each P1 line 5 mm apart, and a total of 5 P1 lines;

[0050] (3) Spin-coat the precursor of the hole transport layer NiOX on the substrate electrode, set the process parameters on the spin coater to 2000rpm-30s, use a 1000ul pipette to take 350ul of NiOX solution, drop it on the substrate, spin the substrate at high speed using the set parameters, and then anneal it on a heating table at 120℃ for 15min to prepare the hole transport layer NiO X ;

[0051] (4) After the sample is cooled to room temperature, the precursor of the interface modification layer 2PACz is spin-coated on the hole transport layer. The process parameters are set to 3000 rpm-30s. 300 microliters of 2PACz solution is taken with a 1000ul pipette and dropped on the substrate. The substrate is rotated at high speed using the set parameters, and then annealed on a heating table at 100°C for 10 minutes to prepare the interface modification layer 2PACz.

[0052] (5) After the sample is cooled to room temperature, the perovskite absorption layer is spin-coated on the interface modification layer, and the process parameters are set to 1000rpm-5s and 4000rpm-30s. Before coating the perovskite, 300 microliters of DMF solvent are spin-coated once according to the perovskite absorption layer process. Then, 300 microliters of anti-solvent of the perovskite solution are taken with a 1000ul pipette and dropped on the substrate. The anti-solvent pipette tip is cut into a tube with a diameter of 3~4mm, and the tip of the pipette is 0.5cm-1cm away from the substrate surface. 300 microliters of anisole are slowly and continuously added to the membrane surface in a water flow within 1-2s. Then, the membrane is annealed at 60℃ for 5min and then at 100℃ for 25min on a heating table to prepare the perovskite absorption layer.

[0053] (6) The sample obtained in step (5) was placed in a vacuum thermal evaporation device, and a 30 nm electron transport layer C60 and an 8 nm hole blocking layer BCP were evaporated at a rate of 0.1-0.2 A / s;

[0054] (7) Laser scribe the P2 line on the sample surface in step (6) using a wavelength of 355, a power of 30, and a spacing of 0.05 mm from the P1 line. Repeat each P2 line 30 times, with each line 5 mm apart, for a total of 5 P2 lines. Repeat the above steps once more after completion.

[0055] (8) The sample obtained in step (7) was placed in a vacuum thermal evaporation device and a 240 nm Ag electrode was evaporated at a rate controlled between 0.1 and 0.2 A / s;

[0056] (9) Laser scribe the P3 line on the surface of the sample in step (8) using a wavelength of 355 and a power of 45, with a spacing of 0.05 mm from the P2 line. Repeat each P3 line 30 times, with a spacing of 5 mm between each line, and scribe a total of 5 P3 lines to obtain an inverted structure metal halide perovskite solar cell module.

[0057] The battery structure prepared by the above method is shown in Figure 1, which includes, from bottom to top, the base electrode ITO, the hole transport layer NiO X , interface modification layer 2PACz, perovskite thin film layer PVK, electron transport layer C60, hole blocking layer BCP and back electrode Ag.

[0058] FIG4 shows the JV curve (solid line) of the experimental module in the present invention that was pre-wetted with DMF once and pre-annealed at 60°C under sunlight. Compared with the perovskite photovoltaic module that did not use the method of the present invention (dashed line), its conversion efficiency was significantly improved.

[0059] Example 2

[0060] In this embodiment, DMF pre-infiltration is performed three times, and the pre-annealing temperature is 60° C., specifically comprising the following steps:

[0061] (1) Select 5 cm × 5 cm indium tin oxide (ITO) conductive glass as the base electrode and treat it with a UV ozone machine or plasma cleaner for 20 minutes.

[0062] (2) Laser scribing P1 on the substrate, using a wavelength of 355 nm, a power of 70, repeated 4 times, with each P1 line 5 mm apart, and a total of 5 P1 lines;

[0063] (3) Spin-coat the precursor of the hole transport layer NiOX on the substrate electrode, set the process parameters on the spin coater to 2000rpm-30s, use a 1000ul pipette to take 350ul of NiOX solution, drop it on the substrate, spin the substrate at high speed using the set parameters, and then anneal it on a heating table at 120℃ for 15min to prepare the hole transport layer NiO X ;

[0064] (4) After the sample is cooled to room temperature, the precursor of the interface modification layer 2PACz is spin-coated on the hole transport layer. The process parameters are set to 3000 rpm-30s. 300 microliters of 2PACz solution is taken with a 1000ul pipette and dropped on the substrate. The substrate is rotated at high speed using the set parameters, and then annealed on a heating table at 100°C for 10 minutes to prepare the interface modification layer 2PACz.

[0065] (5) After the sample is cooled to room temperature, the perovskite absorption layer is spin-coated on the interface modification layer, and the process parameters are set to 1000rpm-5s and 4000rpm-30s. Before coating the perovskite, 300 microliters of DMF solvent are spin-coated once according to the perovskite absorption layer process. During the spin-coating process, the same amount of DMF solvent is added twice at equal intervals for pre-wetting. Then, 300 microliters of anti-solvent of the perovskite solution is taken with a 1000ul pipette and dropped on the substrate. The anti-solvent pipette tip is cut into a tube with a diameter of 3~4mm, and the tip of the pipette is 0.5cm-1cm away from the substrate surface. 300 microliters of anisole are slowly and continuously added to the membrane surface in a water stream within 1-2s. Then, the membrane is annealed at 60℃ for 5min and then at 100℃ for 25min on a heating table to prepare the perovskite absorption layer.

[0066] (6) The sample obtained in step (5) was placed in a vacuum thermal evaporation device, and a 30 nm electron transport layer C60 and an 8 nm hole blocking layer BCP were evaporated at a rate of 0.1-0.2 A / s;

[0067] (7) Laser scribe the P2 line on the sample surface in step (6) using a wavelength of 355, a power of 30, and a spacing of 0.05 mm from the P1 line. Repeat each P2 line 30 times, with each line 5 mm apart, for a total of 5 P2 lines. Repeat the above steps once more after completion.

[0068] (8) The sample obtained in step (7) was placed in a vacuum thermal evaporation device and a 240 nm Ag electrode was evaporated at a rate controlled between 0.1 and 0.2 A / s;

[0069] (9) Laser scribe the P3 line on the surface of the sample in step (8) using a wavelength of 355 and a power of 45, with a spacing of 0.05 mm from the P2 line. Repeat each P3 line 30 times, with a spacing of 5 mm between each line, and scribe a total of 5 P3 lines to obtain an inverted structure metal halide perovskite solar cell module.

[0070] The battery structure prepared by the above method is shown in Figure 1, which includes, from bottom to top, the base electrode ITO, the hole transport layer NiO X , interface modification layer 2PACz, perovskite thin film layer PVK, electron transport layer C60, hole blocking layer BCP and back electrode Ag.

[0071] Figure 5 shows the JV curve (solid line) of the experimental module in the present invention that was pre-wetted with DMF three times and pre-annealed at a temperature of 60°C under sunlight. Compared with the perovskite photovoltaic module that did not use the method of the present invention (dashed line), its conversion efficiency was significantly improved.

[0072] Example 3

[0073] In the embodiment, DMF pre-infiltration is performed three times, and the pre-annealing temperature is 70° C., specifically comprising the following steps:

[0074] (1) Select 5 cm × 5 cm indium tin oxide (ITO) conductive glass as the base electrode and treat it with a UV ozone machine or plasma cleaner for 20 minutes.

[0075] (2) Laser scribing P1 on the substrate, using a wavelength of 355 nm, a power of 70, repeated 4 times, with each P1 line 5 mm apart, and a total of 5 P1 lines;

[0076] (3) Spin-coat the precursor of the hole transport layer NiOX on the substrate electrode, set the process parameters on the spin coater to 2000rpm-30s, use a 1000ul pipette to take 350ul of NiOX solution, drop it on the substrate, spin the substrate at high speed using the set parameters, and then anneal it on a heating table at 120℃ for 15min to prepare the hole transport layer NiO X ;

[0077] (4) After the sample is cooled to room temperature, the precursor of the interface modification layer 2PACz is spin-coated on the hole transport layer. The process parameters are set to 3000 rpm-30s. 300 microliters of 2PACz solution is taken with a 1000ul pipette and dropped on the substrate. The substrate is rotated at high speed using the set parameters, and then annealed on a heating table at 100°C for 10 minutes to prepare the interface modification layer 2PACz.

[0078] (5) After the sample is cooled to room temperature, the perovskite absorption layer is spin-coated on the interface modification layer, and the process parameters are set to 1000rpm-5s and 4000rpm-30s. Before coating the perovskite, 300 microliters of DMF solvent are spin-coated once according to the perovskite absorption layer process. During the spin-coating process, the same amount of DMF solvent is added twice at equal intervals for pre-wetting. Then, 300 microliters of anti-solvent of the perovskite solution is taken with a 1000ul pipette and dropped on the substrate. The anti-solvent pipette tip is cut into a tube with a diameter of 3-4mm, and the tip of the pipette is 0.5cm-1cm away from the substrate surface. 300 microliters of anisole are slowly and continuously added to the membrane surface in a water flow within 1-2s. Then, the membrane is annealed at 70℃ for 5min and then at 100℃ for 25min on a heating table to prepare the perovskite absorption layer.

[0079] (6) The sample obtained in step (5) was placed in a vacuum thermal evaporation device, and a 30 nm electron transport layer C60 and an 8 nm hole blocking layer BCP were evaporated at a rate of 0.1-0.2 A / s;

[0080] (7) Laser scribe the P2 line on the sample surface in step (6) using a wavelength of 355, a power of 30, and a spacing of 0.05 mm from the P1 line. Repeat each P2 line 30 times, with each line 5 mm apart, for a total of 5 P2 lines. Repeat the above steps once more after completion.

[0081] (8) The sample obtained in step (7) was placed in a vacuum thermal evaporation device and a 240 nm Ag electrode was evaporated at a rate controlled between 0.1 and 0.2 A / s;

[0082] (9) Laser scribe the P3 line on the surface of the sample in step (8) using a wavelength of 355 and a power of 45, with a spacing of 0.05 mm from the P2 line. Repeat each P3 line 30 times, with a spacing of 5 mm between each line, and scribe a total of 5 P3 lines to obtain an inverted structure metal halide perovskite solar cell module.

[0083] The battery structure prepared by the above method is shown in Figure 1, which includes, from bottom to top, the base electrode ITO, the hole transport layer NiO X , interface modification layer 2PACz, perovskite thin film layer PVK, electron transport layer C60, hole blocking layer BCP and back electrode Ag.

[0084] Figure 6 shows the JV curve (solid line) of the experimental module in the present invention that was pre-impregnated with DMF three times and pre-annealed at a temperature of 70°C under sunlight. Compared with the perovskite photovoltaic module that did not use the method of the present invention (dashed line), its conversion efficiency was significantly improved.

[0085] Advantages of Examples 1-3 include:

[0086] 1) Compatible with other hybrid perovskite components and spin-coating processes, the preparation method is more stable and efficient, the uniformity of the perovskite film prepared for devices is significantly improved, and the hole defects are reduced by more than 95%;

[0087] 2) Through DMF pre-wetting, the wettability of the substrate surface is significantly improved;

[0088] 3) Optimizing the antisolvent addition method can achieve stable, efficient, and hole-free film formation within a narrow process window, making the antisolvent more stable and uniform on the film, thereby improving the success rate of device preparation;

[0089] 4) Gradient thermal annealing is used to effectively avoid volume shrinkage during the annealing process, reduce hole defects, and achieve high-quality film formation.

[0090] This application has been experimentally proven to be feasible. As shown in Figures 2 and 3, the uniformity of the perovskite film prepared in this application is significantly improved, most of the hole defects can be eliminated, and the efficiency of the 5x5cm module can reach up to 18.53%.

[0091] It should be noted that the DMF pre-infiltration described in the present invention is not only applicable to the perovskite component of the present invention, but also to most halide perovskite materials; the optimized anti-solvent addition method in the present invention can be applied to most common anti-solvents, such as chlorobenzene, ether, etc.: the gradient thermal annealing in the present invention is not limited to the perovskite component material, and other materials can also be adjusted and applied.

[0092] The above description is merely an exemplary embodiment of the present disclosure, but the scope of protection of the present disclosure is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in the present disclosure should be included in the scope of protection of the present disclosure. Therefore, the scope of protection of the present disclosure should be based on the scope of protection of the claims.

Claims

1. A perovskite solar cell module, characterized in that: The perovskite thin-film solar cell module structure can be divided into a substrate, a hole transport layer, an interface modification layer, a perovskite absorption layer, an electron transport layer, a hole blocking layer, and a back electrode from bottom to top; the perovskite absorption layer is prepared by adding DMF pre-infiltration.

2. The method for preparing a perovskite solar cell module and a large-area uniform perovskite film according to claim 1, characterized in that: The following steps are involved: 1) Laser scribing P1 on the substrate; 2) coating a precursor of a hole transport layer material on the substrate electrode to prepare a hole transport layer; 3) coating a precursor of an interface modification layer material on the hole transport layer to prepare an interface modification layer; 4) coating a precursor of a perovskite thin film layer on the interface modification layer to prepare a perovskite thin film layer; 5) coating a precursor of an electron transport layer material on the perovskite thin film layer to prepare an electron transport layer; 6) coating a precursor of a hole blocking layer material on the electron transport layer to prepare a hole blocking layer; 7) laser scribing P2 on the back side of the hole blocking layer; 8) coating a back electrode material on the hole blocking layer to prepare a back electrode, wherein the back electrode is a Ag electrode; 9) Laser scribing a P3 line on the Ag electrode.

3. The method for preparing a perovskite solar cell module and a large-area uniform perovskite film according to claim 2, characterized in that: In the step (1), a wavelength of 355 nm and a power of 70 are used, and the process is repeated 4 times, with each P1 line being 5 mm apart.

4. The method for preparing a perovskite solar cell module and a large-area uniform perovskite film according to claim 2, characterized in that: In the step (2), the coating is one of spin coating, evaporation, slit coating, blade coating and screen printing; the step (2) also includes annealing after coating, the temperature of the annealing is 100-120° C.; the time of the annealing is 10-15 min.

5. The method for preparing a perovskite solar cell module and a large-area uniform perovskite film according to claim 2, characterized in that: In the step (2), the base electrode needs to be washed and dried before use, which specifically includes the following steps: ultrasonically cleaning the base electrode with transparent glass cleaning liquid, deionized water, acetone, and isopropanol for 15-30 minutes, then drying it in an oven at 80-100°C, cooling it, and then treating it with an ultraviolet ozone cleaner or a plasma cleaner for 15-20 minutes for standby use.

6. The method for preparing a perovskite solar cell module and a large-area uniform perovskite film according to claim 2, characterized in that: In the step (3), the coating is performed by spin coating. Before coating the perovskite, the DMF solvent is first spin coated once according to the perovskite absorption layer process. During the spin coating process, the DMF solvent is dripped twice at equal intervals for pre-wetting. Then, the perovskite layer is spin coated. The tip of the anti-solvent pipette is cut open with a nozzle of 3-4 mm in diameter. The nozzle of the pipette is 0.5 cm-1 cm away from the substrate surface and is continuously dripped on the surface of the perovskite film in the form of a water stream within 1-2 seconds.

7. The method for preparing a perovskite solar cell module and a large-area uniform perovskite film according to claim 2, characterized in that: The step (3) also includes a gradient annealing treatment after coating, wherein the annealing temperature is first annealing at 60° C. for 5 minutes and then annealing at 100° C. for 25 minutes.

8. The method for preparing a perovskite solar cell module and a large-area uniform perovskite film according to claim 2, characterized in that: The step (4) further comprises an annealing treatment after coating, wherein the annealing temperature is 100-120° C. and the annealing time is 20-30 minutes.

9. The method for preparing a perovskite solar cell module and a large-area uniform perovskite film according to claim 2, characterized in that: In the step (5), the coating is performed by evaporation, and the thickness of the electron transport layer is 30 nm. In the step (6), the coating is performed by evaporation, and the thickness of the hole blocking layer is 8 nm.

10. The method for preparing a perovskite solar cell module and a large-area uniform perovskite film according to claim 2, characterized in that: In step (7), a wavelength of 355, a power of 30, and a spacing of 0.05 mm between the P1 line and each P2 line are repeated 30 times, with each line being 5 mm apart. After completion, the above steps are repeated once more. In step (9), a wavelength of 355, a power of 45, and a spacing of 0.05 mm between the P2 line and each P3 line are repeated 30 times, with each line being 5 mm apart.

Images