Lower electrode feed-in device and semiconductor processing apparatus

Abstract

A lower electrode feed-in device and a semiconductor processing apparatus. The device comprises a radio frequency feed-in assembly (3), wherein one end of the radio frequency feed-in assembly (3) is configured to be electrically connected to a radio frequency source, and the other end thereof is configured to be electrically connected to a chuck assembly (2). The radio frequency feed-in assembly (3) comprises at least two radio frequency feed-in tubes (31, 32) and at least one radio frequency adapter tube (33), wherein every two adjacent radio frequency feed-in tubes (31, 32) are each provided with a first fitting portion (321), the radio frequency adapter tube (33) is provided with two second fitting portions (331), and the two second fitting portions (331) respectively fit with the first fitting portions (321) of the two adjacent radio frequency feed-in tubes (31, 32), such that the radio frequency adapter tube (33) is detachably and electrically connected to and and is in electrical conduction with the two adjacent radio frequency feed-in tubes (31, 32). In this way, the radio frequency feed-in tubes can be more conveniently disassembled and assembled, the assembly consistency of all machine tables can be better ensured, and a solid medium can be selected so as to avoid the problem of the solid medium being not easy to be disassembled and assembled, such that the space occupied by the lower electrode feed-in device can be reduced, and thus more space can be provided for optimizing other lower electrode components.

Description

Lower electrode feeding device and semiconductor processing equipment Technical Field

[0001] The present application relates to the field of semiconductor manufacturing, and in particular, to a lower electrode feeding device and semiconductor processing equipment. Background Art

[0002] Plasma etcher can be used to perform etching processes, such as removing excess material on semiconductor wafers that is pre-designed and required, generating grooves with corresponding process requirements, and providing a basis for subsequent processes. The process chamber of the plasma etcher is in a vacuum state. Before the etching process, the wafer to be processed is placed on the chuck assembly. When the etching process is performed, the process gas is transported into the process chamber through the air inlet device at the top of the chamber, and the process gas is ionized to form a plasma by loading radio frequency power onto the upper electrode (such as a radio frequency coil) arranged at the top of the chamber. The chuck assembly is loaded with radio frequency power through the lower electrode feeding device to attract the plasma to move toward the wafer on the chuck assembly, thereby completing the etching process on the wafer. In addition, the above-mentioned chuck assembly is also provided with an electrostatic adsorption electrode and a heating element. In this case, the lower electrode feeding device can also be used to feed direct current into the electrostatic adsorption electrode to be able to adsorb and fix the wafer, and the lower electrode feeding device can also be used to feed alternating current into the heating element to heat the wafer.

[0003] However, the existing lower electrode feeding device has problems such as being difficult to disassemble and assemble, and poor machine assembly consistency, resulting in low installation and maintenance efficiency.

[0004] Summary of the Invention

[0005] The present application aims to solve at least one of the technical problems existing in the prior art, and proposes a lower electrode feeding device and semiconductor processing equipment, which can solve the problems of difficult disassembly and assembly and poor machine assembly consistency in the prior art, thereby improving installation and maintenance efficiency.

[0006] To achieve the purpose of the present application, a lower electrode feeding device is provided, which is applied to semiconductor process equipment and includes a radio frequency feeding component, one end of which is used to be electrically connected to a radio frequency source, and the other end of which is used to be electrically connected to a chuck component; the radio frequency feeding component includes at least two radio frequency feeding tubes and at least one radio frequency transfer tube; wherein,

[0007] Each of the two adjacent RF feeding tubes is provided with a first mating portion, and the RF transfer tube is provided with two second mating portions, which respectively cooperate with the first mating portions of the two adjacent RF feeding tubes, so that the RF transfer tube is respectively detachably connected to the two adjacent RF feeding tubes and electrically conductive.

[0008] In some embodiments, the detachable connection is plug-in, one of the first mating portion and the second mating portion is a first ring portion, the other of the first mating portion and the second mating portion is a second ring portion, and the first ring portion is sleeved on the outer circumference of the second ring portion.

[0009] In some embodiments, a conductive elastic member is further disposed between the inner circumference of the first ring portion and the outer circumference of the second ring portion.

[0010] In some embodiments, each two adjacent RF feeding tubes are straight tubes, and their axes form a first angle; the RF transfer tube is a bent tube, and its axis is bent to form the first angle;

[0011] One end of each of the two adjacent RF feeding tubes is provided with the first ring portion, and two ends of the RF transfer tube are respectively provided with two second ring portions.

[0012] In some embodiments, the inner diameter of the RF feed tube is smaller than the inner diameter of the first ring portion, and the outer diameter of the RF adapter tube is larger than the outer diameter of the second ring portion; and the inner diameter of the RF feed tube is equal to the inner diameter of the RF adapter tube, and the outer diameter of the RF feed tube is equal to the outer diameter of the RF adapter tube.

[0013] In some embodiments, a first arc transition portion is formed on the outer peripheral surface of the RF adapter at the first angle.

[0014] In some embodiments, the radio frequency switching tube includes two semi-annular parts, and the two semi-annular parts are connected to each other to form the bent tube.

[0015] In some embodiments, the lower electrode feeding device further comprises:

[0016] The shielding component is sleeved on the outer periphery of the radio frequency feeding component and is used for shielding the radiation generated by radio frequency, and a gap is formed between the inner periphery of the shielding component and the outer periphery of the radio frequency feeding component.

[0017] In some embodiments, the lower electrode feeding device further comprises:

[0018] An insulating dielectric member is disposed in the gap and is used to maintain a preset first withstand voltage safety distance between the shielding component and the radio frequency feeding component.

[0019] In some embodiments, the insulating dielectric member includes an insulating sleeve sleeved around the outer periphery of the RF feed assembly; the shielding assembly is sleeved around the outer periphery of the insulating sleeve; or,

[0020] The insulating dielectric member includes an insulating dielectric material filled in the gap.

[0021] In some embodiments, the lower electrode feeding device further comprises: an electrical feeding component,

[0022] The electrical feedthrough assembly is disposed in a hollow space formed by the inner circumference of all the RF feedthrough tubes and the RF transfer tubes, and is used to feed direct current and / or alternating current into the chuck assembly.

[0023] In some embodiments, the electrical feedthrough assembly includes at least two electrical feedthroughs and at least one electrical adapter, the number of the electrical feedthroughs being the same as the number of the RF feedthroughs, and the electrical feedthroughs being disposed in a one-to-one correspondence at the location of the RF feedthroughs; the number of the electrical adapters being the same as the number of the RF transfer tubes, and the electrical adapters being disposed in a one-to-one correspondence at the location of the RF transfer tubes;

[0024] Every two adjacent electrical feed-in components are detachably connected via one electrical adapter and are electrically conductive.

[0025] In some embodiments, the electrical adapter includes a first sub-adapter, a second sub-adapter, a plurality of first adapter wires, and a plurality of second adapter wires, wherein:

[0026] The first sub-adapter and the second sub-adapter are both made of insulating material and are cylindrical, and their axes form a second angle, which is consistent with the angle between the axes of each two adjacent RF feed tubes; the first sub-adapter has a first mating surface, and the second sub-adapter has a second mating surface, the first mating surface is in contact with the second mating surface, and the first mating surface and the second mating surface form a third angle and a fourth angle with the axes of the first sub-adapter and the second sub-adapter, respectively, and the sum of the third angle and the fourth angle is equal to the second angle;

[0027] A plurality of first adapter wires are arranged in the first sub-adapter along the axis of the first sub-adapter, and the plurality of first adapter wires are arranged at intervals from each other;

[0028] Multiple second transfer wires are arranged in the second sub-adapter along the axis of the second sub-adapter, and the multiple second transfer wires are arranged at intervals from each other; one end of each second transfer wire and one end of each first transfer wire are respectively located on the first mating surface and the second mating surface, and are in one-to-one electrical contact or connected as one.

[0029] In some embodiments, one of the first mating surface and the second mating surface is provided with a first positioning protrusion; the other of the first mating surface and the second mating surface is provided with a first positioning recess; and the first positioning protrusion is matched with the first positioning recess.

[0030] In some embodiments, the number of the first positioning protrusions is the same as the number of the first transfer conductors and the second transfer conductors, and each of the first positioning protrusions is arc-shaped and surrounds one of the first transfer conductors and the second transfer conductors in a one-to-one correspondence; each of the first positioning recesses is arc-shaped and surrounds the other of the first transfer conductors and the second transfer conductors in a one-to-one correspondence.

[0031] In some embodiments, the first sub-adapter and the second sub-adapter both have a docking surface;

[0032] Each of the two adjacent electrical feed-in components comprises an insulating column and a plurality of feed-in wires, wherein the first end surface of the insulating column is in contact with the mating surface of the first sub-adapter or the second sub-adapter;

[0033] A plurality of the feeding wires are arranged in the insulating cylinder along the axis of the insulating cylinder, and the plurality of the feeding wires are arranged at intervals from each other; one end of each of the feeding wires and the other end of each of the first transfer wires or the second transfer wires are respectively located on the first end surface and the docking surface, and are in one-to-one electrical contact.

[0034] In some embodiments, one of the docking surface and the first end surface is provided with a second positioning protrusion; the other of the docking surface and the first end surface is provided with a second positioning recess; and the second positioning protrusion cooperates with the second positioning recess.

[0035] In some embodiments, the number of the second positioning protrusions is the same as the number of the feeding wires;

[0036] Each of the second positioning protrusions is annular and surrounds each of the feed wires in a one-to-one correspondence; each of the second positioning recesses is annular and surrounds the first transfer wire or the second transfer wire in a one-to-one correspondence; or,

[0037] Each of the second positioning protrusions is annular and surrounds each of the first switching conductors or the second switching conductors in a one-to-one correspondence; each of the second positioning recesses is annular and surrounds each of the feeding conductors in a one-to-one correspondence.

[0038] In some embodiments, the other ends of each of the first switching conductors and each of the second switching conductors are provided with a connection recess; one end of each of the feeding conductors is provided with a connection protrusion, and the connection protrusion cooperates with the connection recess and is in electrical contact; or,

[0039] The other end of each of the first switching conductors and each of the second switching conductors is provided with a connecting protrusion; one end of each of the feeding conductors is provided with a connecting recess, and the connecting protrusion matches with the connecting recess and is in electrical contact.

[0040] In some embodiments, the connecting protrusion includes a conductive extension portion extending from the first end face or the mating face, and a conductive elastic portion detachably mounted on the conductive extension portion, the conductive extension portion and the conductive elastic portion are both located in the connecting recess, and the conductive elastic portion is in a compressed state.

[0041] In some embodiments, a countersunk hole is provided on the second end surface of the insulating column at a position corresponding to each feeding wire, and the other end of each feeding wire is located in the countersunk hole.

[0042] As another technical solution, the present application also provides a semiconductor processing equipment, including a process chamber and a chuck assembly arranged in the process chamber, and also including the above-mentioned lower electrode feeding device provided in the present application.

[0043] In some embodiments, the chuck assembly includes a chuck body for carrying a wafer, an interface plate disposed below the chuck body, and an annular insulating member connected between the chuck body and the interface plate, wherein the lower surface of the chuck body, the upper surface of the interface plate, and the inner circumferential surface of the annular insulating member constitute an internal space;

[0044] In the RF feeding assembly, one end of the RF feeding tube closest to the chuck assembly extends into the internal space and is electrically connected to the chuck body.

[0045] In some embodiments, a circuit board assembly is further provided at the bottom of the chuck body and in the internal space;

[0046] The RF feed assembly further includes: an RF feed plate, the RF feed plate being disposed in the internal space and located at the bottom of the circuit board assembly, and an annular connecting portion being disposed on an outer periphery of the RF feed plate, the annular connecting portion being disposed around the outer periphery of the circuit board assembly at intervals and connected to the chuck body;

[0047] The RF feeding disk is provided with a central hole, and one end of the RF feeding tube closest to the chuck assembly is connected to the inner periphery of the RF feeding disk and is electrically conductive.

[0048] In some embodiments, the lower electrode feeding device further comprises an electrical feeding assembly, wherein the electrical feeding assembly is provided through a hollow space formed by the inner circumference of all the RF feeding tubes and the RF transfer tube;

[0049] The electrical feedthrough assembly is electrically connected to the circuit board assembly through the central hole, and is used to feed direct current and / or alternating current into the chuck body through the circuit board assembly.

[0050] In some embodiments, a preset second voltage-resistant safety distance is set between the lower surface of the RF feeding plate and the upper surface of the interface plate.

[0051] This application has the following beneficial effects:

[0052] The lower electrode feeding device provided in the present application adopts a split RF feeding component, that is, at least two RF feeding tubes and at least one RF transfer tube, and utilizes a first mating portion provided on each two adjacent RF feeding tubes to cooperate with two second mating portions provided on the RF transfer tube, respectively, so that the RF transfer tube can be detachably connected to the two adjacent RF feeding tubes and electrically conductive. This detachable connection method can make it easier to disassemble and assemble the RF feeding tube, thereby improving the installation and maintenance efficiency, and this split assembly method can better ensure the assembly consistency of each machine, thereby improving the process consistency. On this basis, since the split RF feeding component is easier to disassemble and assemble, a solid medium can be selected to be set in the gap formed between the inner periphery of the shielding component and the outer periphery of the RF feeding component, and there is no problem of the solid medium being difficult to disassemble and assemble. Compared with the prior art in which the lower electrode feeding device is difficult to disassemble and assemble and has to use an air medium, the use of a solid medium can design different first withstand voltage safety distances, thereby meeting different requirements for the space where the lower electrode is located. For example, by adopting a solid medium with a dielectric constant greater than that of the air medium, the first withstand voltage safety distance can be reduced, thereby reducing the occupied space of the lower electrode feed device, and more space can be used to optimize other lower electrode components.

[0053] The semiconductor processing equipment provided by the present application, by adopting the above-mentioned lower electrode feeding device provided by the present application, can not only more conveniently disassemble and assemble the RF feeding tube, thereby improving the installation and maintenance efficiency, but also this split assembly method can better ensure the assembly consistency of each machine, thereby improving the process consistency, and can also use solid media without the problem of solid media being difficult to disassemble and assemble, thereby reducing the space occupied by the lower electrode feeding device, so that more space can be used to optimize other lower electrode components. BRIEF DESCRIPTION OF THE DRAWINGS

[0054] FIG1 is a cross-sectional view of a lower electrode feeding device in the related art;

[0055] FIG2 is a radial cross-sectional view of a straight section of a radio frequency connecting column;

[0056] FIG3 is a cross-sectional view of a lower electrode feeding device and a process chamber provided in an embodiment of the present application;

[0057] FIG4 is a cross-sectional view of a lower electrode feeding device provided in an embodiment of the present application;

[0058] FIG5 is a cross-sectional view of the inner surface of the semi-annular split body of the RF adapter used in an embodiment of the present application;

[0059] FIG6 is a perspective view of one side of the outer surface of the semi-annular split body of the radio frequency adapter used in an embodiment of the present application;

[0060] FIG7 is a perspective view of one side of the inner surface of the semi-annular split body of the radio frequency adapter tube used in an embodiment of the present application, with an electrical adapter installed;

[0061] FIG8 is a cross-sectional view of an electrical adapter used in an embodiment of the present application;

[0062] FIG9 is a cross-sectional view of the second sub-adapter used in an embodiment of the present application;

[0063] FIG10 is a partial perspective view of one side of the first end surface of the electrical feedthrough used in an embodiment of the present application;

[0064] FIG11 is a partial three-dimensional view of a second end surface of the electrical feed-through used in an embodiment of the present application. DETAILED DESCRIPTION

[0065] In order to enable those skilled in the art to better understand the technical solution of the present application, the lower electrode feeding device and semiconductor processing equipment provided by the present application are described in detail below with reference to the accompanying drawings.

[0066] FIG1 is a cross-sectional view of a lower electrode feedthrough device in the related art. As shown in FIG1 , the lower electrode feedthrough device includes an integrated RF connection column, which is divided into a straight section 021, a curved section 022, and a connecting section 023. The RF current provided by the RF power supply sequentially passes through the straight section 021, the curved section 022, and the connecting section 023, extending from the outside of the chamber to the inside of the chamber, and is fed into the chamber from the center of the chuck body 01 in the chuck assembly. Furthermore, as shown in FIG1 and FIG2 , taking the straight section 021 of the RF connection column as an example, a hollow space is provided therein, through which a plurality of mutually spaced wires 03 are passed, and a plurality of insulating fixing members 04 are spaced apart in the hollow space for fixing the positions of the plurality of wires 03 in the hollow space. In addition, the hollow space is filled with glue to form an insulating filling material 05. Among the multiple wires 03, two DC wires 031 are used to feed DC power to the electrostatic adsorption electrodes in the chuck assembly. Two of the remaining wires 032 are used to feed AC power to the heating elements in one of the heating zones of the chuck assembly. It should be noted that FIG1 schematically illustrates only one wire 03 and a portion of the insulating fixture 04.

[0067] As shown in Figure 1, the lower electrode feedthrough also includes a shielding sleeve, comprising a straight shielding sleeve 061 and a curved shielding sleeve 062, which are respectively sleeved over the straight section 021 and curved section 022 of the RF connection column to shield radiation generated by the RF connection column. Furthermore, a gap 063 is defined between the straight shielding sleeve 061 and the curved shielding sleeve 062, respectively, and a plurality of insulating connectors 07 are disposed within the gap 063 to secure the RF connection column to prevent contact between the straight section 021 and curved section 022 of the RF connection column and the straight shielding sleeve 061 and curved shielding sleeve 062.

[0068] The inventors of this application have discovered through research that the integrated structure of the RF connection post in the aforementioned lower electrode feedthrough makes it difficult to disassemble and assemble the RF connection post, resulting in low installation and maintenance efficiency and poor machine assembly consistency. Furthermore, because the RF connection post in the related art is difficult to disassemble and assemble, using a solid dielectric in the aforementioned gap 063 would be difficult to disassemble and assemble, necessitating the use of an air dielectric, which has a dielectric constant of 1. This results in a relatively large voltage-resistant safety distance between the straight shielding sleeve 061 and the curved shielding sleeve 062 and the straight section 021 and curved section 022 of the RF connection post, respectively. This results in a larger footprint for the lower electrode feedthrough, further complicating the optimization of other lower electrode components.

[0069] In order to solve the problem that the above-mentioned lower electrode feeding device is difficult to disassemble and assemble, and the machine assembly consistency is poor, please refer to Figures 3 and 4 together. An embodiment of the present application provides a lower electrode feeding device, which is applied to semiconductor process equipment, comprising a radio frequency feeding component 3, one end of the radio frequency feeding component 3 is located outside the process chamber 1 of the semiconductor process equipment, for electrically connecting to a radio frequency source (not shown in the figure), the other end of the radio frequency feeding component 3 is located in the process chamber 1, for electrically connecting to the chuck assembly 2, and the radio frequency feeding component 3 is used to feed the radio frequency current provided by the radio frequency source into the chuck assembly 2. The above-mentioned radio frequency source, for example, includes a radio frequency power supply and a matcher, and the radio frequency power supply provides radio frequency current to the radio frequency feeding component 3 through the matcher, and the radio frequency current is transported and fed into the chuck assembly 2 by the radio frequency feeding component 3. For example, one end of the radio frequency feeding component 3 is located outside the side wall 11 of the process chamber 1, and is electrically connected to the radio frequency source, and the other end of the radio frequency feeding component 3 is electrically connected to the chuck assembly 2 at the bottom thereof.

[0070] The above-mentioned RF feeding assembly 3 includes at least two RF feeding tubes and at least one RF switching tube 33, and each adjacent two RF feeding tubes are detachably connected through an RF switching tube 33 and are electrically conductive. Specifically, as shown in Figures 4 to 6, each adjacent two RF feeding tubes (for example, the first RF feeding tube 31 and the second RF feeding tube 32) are provided with a first matching portion 321, and the RF switching tube 33 is provided with two second matching portions 331, and the two second matching portions 331 are respectively matched with the first matching portions 321 of the two adjacent RF feeding tubes, so that the RF switching tube 33 is respectively detachably connected to the two adjacent RF feeding tubes (for example, the first RF feeding tube 31 and the second RF feeding tube 32) and is electrically conductive. In actual applications, the way in which the first matching portion 321 and the second matching portion 331 match each other can include plugging, clamping, mortise and tenon connection, etc., so as to realize that the RF feeding tube and the RF switching tube 33 are detachably connected and electrically conductive.

[0071] For example, there are two RF feed tubes, namely the first RF feed tube 31 and the second RF feed tube 32, both of which are straight tubes, and the axes are at a first angle, which is, for example, 90°; the RF transfer tube 33 is bent tube-shaped, and its axis is bent to form the above-mentioned first angle. In this case, the axis of the first RF feed tube 31 is set horizontally, and the axis of the second RF feed tube 32 is set vertically. The first RF feed tube 31 is passed through the side wall 11 of the process chamber 1, and one end is electrically connected to the RF source, and the other end is connected to one end of the RF transfer tube 33, and is electrically conductive; one end of the second RF feed tube 32 is connected to the other end of the RF transfer tube 33, and is electrically conductive, and the other end of the second RF feed tube 32 is electrically connected to it at the bottom of the chuck assembly 2. It should be noted that in actual applications, the above-mentioned first angle can also be any other angle, and the angle at which the first RF feed tube 31 and the second RF feed tube 32 are inclined relative to the horizontal plane can also be any angle.

[0072] In some embodiments of the present application, the detachable connection between the RF feeding tube and the RF switching tube 33 is plug-in, as shown in Figures 4 to 6, one of the above-mentioned first matching portion 321 and the second matching portion 331 is a first ring portion, and the other of the first matching portion 321 and the second matching portion 331 is a second ring portion, and the first ring portion is sleeved on the outer circumference of the second ring portion, that is, the two are nested with each other.

[0073] Furthermore, in some embodiments of the present application, as shown in FIG4 , a conductive elastic member 9 is disposed between the inner circumference of the first ring portion and the outer circumference of the second ring portion to enhance the tightness of the fit between the first and second ring portions and the reliability of RF transmission. The conductive elastic member 9 is, for example, a flexible, strip-shaped conductive member that is wrapped around the outer circumference of the second ring portion. The inner diameter of the first ring portion is identical or substantially identical to the outer diameter of the second ring portion, or there is a small gap therebetween. This allows the flexible conductive member to be clamped between the first and second ring portions during installation, thereby further enhancing the tightness of the fit between the first and second ring portions and the reliability of RF transmission. For example, in the case of two RF feed tubes, with their axes forming a first angle, such as 90°, and the RF transfer tube 33 being a bent tubular shape, the first and second RF feed tubes 31 and 32 are each provided with a first ring portion at one end, and the RF transfer tube 33 is provided with two second ring portions at each end.

[0074] In some embodiments of the present application, the inner diameter of the RF feed tube is smaller than the inner diameter of the first ring portion, and the outer diameter of the RF adapter tube 33 is larger than the outer diameter of the second ring portion; furthermore, the inner diameter of the RF feed tube is equal to the inner diameter of the RF adapter tube 33, and the outer diameter of the RF feed tube is equal to the outer diameter of the RF adapter tube 33. In this way, the outer diameter and inner diameter of the RF feed assembly 3 can be made uniform throughout, making it easier to install other lower electrode components inside and outside the RF feed assembly 3.

[0075] In some embodiments of the present application, to reduce the field strength near the first angle on the outer circumference of the RF transfer tube 33 and avoid the risk of RF sparks, a first arc transition portion 332 is formed on the outer circumference of the RF transfer tube 33 at the first angle, as shown in Figures 5 and 6. The specific structure of the first arc transition portion 332 is not limited to that shown in Figure 6. In actual applications, the first arc transition portion 332 can also adopt any other structure as long as it can achieve an arc transition at the first angle on the outer circumference of the RF transfer tube 33.

[0076] In some embodiments of the present application, as shown in Figures 5 and 6, the RF adapter tube 33 includes two semi-annular splits, which are docked with each other to form a bent tube. The structures of the two semi-annular splits can be the same, so that after docking, the bent tube is a complete ring in the circumferential direction. When an electrical feed-in component 6 (described in detail later) is installed inside the RF adapter component, the convenience of disassembly and assembly can be further improved by adopting a split RF adapter tube 33. In some embodiments, the two semi-annular splits can be detachably connected by methods such as plug-in, clip-on, mortise and tenon connection.

[0077] In some embodiments of the present application, the lower electrode feeding device further includes a shielding assembly 5, which is sleeved on the periphery of the RF feeding assembly 3 to shield the radiation generated by the RF. The shielding assembly 5 can be made of, for example, a metal material. Taking two RF feeding tubes as an example, the shielding assembly 5 is sleeved on the periphery of the first RF feeding tube 31, the second RF feeding tube 32 and the RF switching tube 33. In some embodiments, the shielding assembly 5 has a straight tube section coaxially arranged with the first RF feeding tube 31 and the second RF feeding tube 32, and a bent tube section coaxially arranged with the RF switching tube 33. In some embodiments of the present application, the shielding assembly 5 can be an integrated structure or a split structure, and fixedly connected by welding or the like. One end of the shielding assembly 5 is passed through the side wall 11 of the process chamber 1, and the other end is located at the bottom of the chuck assembly 2, for example, fixedly connected to the bottom of the interface disk 23 of the chuck assembly 2.

[0078] A gap is formed between the inner periphery of the shielding component 5 and the outer periphery of the RF feed component 3, and the gap may be an air medium. However, the dielectric constant of the air medium is 1, which results in a large voltage-resistant safety distance required between the inner periphery of the shielding component 5 and the outer periphery of the RF feed component 3, resulting in a large occupied space of the lower electrode feeding device. In order to solve this problem, in some embodiments of the present application, the lower electrode feeding device also includes an insulating dielectric member 4, which is arranged in the gap and is used to maintain a preset first voltage-resistant safety distance between the shielding component 5 and the RF feed component 3, that is, the radial thickness of the insulating dielectric member 4. In some embodiments, the above-mentioned insulating dielectric member 4 includes an insulating sleeve sleeved on the outer periphery of the RF feed component 3; the shielding component 5 is sleeved on the outer periphery of the insulating sleeve; or, the insulating dielectric member 4 includes an insulating dielectric material filled in the gap. The above-mentioned insulating sleeve or insulating dielectric material filled in the gap can make the medium in the gap formed between the inner periphery of the shielding assembly 5 and the outer periphery of the RF feed assembly 3 a solid medium. Compared with the use of air dielectric in the prior art, the insulating dielectric member 4 with the corresponding dielectric constant can be selected according to specific needs to design different first withstand voltage safety distances, thereby meeting different requirements for the space where the lower electrode is located. For example, by adopting a dielectric constant greater than that of the air dielectric, for example, the dielectric constant of the insulating dielectric member 4 is greater than 1, the first withstand voltage safety distance can be reduced, thereby reducing the occupied space of the lower electrode feed device, and thus more space can be used to optimize other lower electrode components. The material of the insulating dielectric member 4 with a dielectric constant greater than 1 includes, for example, a resin such as polytetrafluoroethylene (PTFE).

[0079] Since the medium in the gap formed between the inner periphery of the shielding component 5 and the outer periphery of the RF feed assembly 3 is a solid medium, it will make the RF feed assembly 3 having the bent tubular RF adapter tube 33 difficult to disassemble and assemble, thereby bringing difficulties to the maintenance of the RF feed assembly 3. In order to solve this problem, on the basis of adopting the insulating dielectric member 4, a split RF feed assembly 3 is used in combination, that is, every two adjacent RF feed tubes (for example, the first RF feed tube 31 and the second RF feed tube 32) are detachably connected by an RF adapter tube 33 and are electrically conductive, which can make it more convenient to disassemble and assemble the RF feed tube. Taking two RF feed tubes as an example, the RF feed tubes can be disassembled and assembled in sections by taking out or putting in the first RF feed tube 31 and the second RF feed tube 32 respectively, thereby improving the installation and maintenance efficiency. In addition, this split assembly method can better ensure the assembly consistency of each machine, thereby improving the process consistency.

[0080] The following calculation formula for characteristic impedance is:

[0081] Among them, R c is the characteristic impedance, ξ is the dielectric constant, a is the outer diameter of the RF transfer tube 33 , and b is the inner diameter of the shielding component 5 .

[0082] The calculation formula of the input power of the RF feed component 3 is: P=I 2 R c

[0083] Wherein, P is the input power; U is the voltage value between the shielding component 5 and the RF feeding component 3; R c is the characteristic impedance.

[0084] Taking the RF feeding component 3 as an example, in which the RF feeding tube, the RF transfer tube 33 and the shielding component 5 are all tubular, and the dielectric constant of air is 1, that is, the medium in the gap formed between the inner periphery of the shielding component 5 and the outer periphery of the RF feeding component 3 is air, if the outer diameter a of the RF transfer tube 33 is 20 mm, the characteristic impedance R cIf the resistance is 50Ω and P is 8KW, then the voltage U between the shielding component 5 and the RF feed component 3 can be calculated to be 633V based on the calculation formula of the input power of the RF feed component 3. In this case, if the withstand voltage is required to be 8KV, according to engineering experience, the breakdown voltage of the air medium is 150V / mm. Then, according to the calculation formula of the above characteristic impedance, it can be calculated that the radial spacing between the inner periphery of the shielding component 5 and the outer periphery of the RF feed component 3 should be greater than or equal to 53mm, which can meet the voltage withstand safety distance requirement. In this case, the inner diameter b of the shielding component 5 is required to be greater than 126mm, which results in a larger space occupied by the lower electrode feed device, thereby bringing greater difficulty in optimizing other lower electrode components.

[0085] In contrast, when using a resin dielectric with a dielectric constant greater than 1, such as polytetrafluoroethylene (dielectric constant of 1.9), if the outer diameter a of the RF adapter tube 33 is 20 mm and the first withstand voltage safety distance is 5 mm, the inner diameter b of the shielding assembly 5 should be greater than 30 mm to meet the withstand voltage safety distance requirement. For example, a shielding assembly 5 with an inner diameter of 48 mm, a wall thickness of 4 mm, and an outer diameter of 56 mm can be used. Compared with the above-mentioned case of using an air dielectric with a dielectric constant of 1, the outer diameter of the shielding assembly 5 is greatly reduced, which can effectively reduce the space occupied by the lower electrode feedthrough, thereby allowing more space to be used to optimize other lower electrode components.

[0086] In some embodiments of the present application, as shown in Figures 3 and 4, the lower electrode feeding device further includes an electric feeding assembly 6, which is arranged in a hollow space formed by the inner circumference of all RF feeding tubes (for example, the first RF feeding tube 31 and the second RF feeding tube 32) and the RF switching tube 33, and the electric feeding assembly 6 can pass through the internal space to reach the chuck assembly 2. In some embodiments, the electric feeding assembly 6 is coaxially arranged with all RF feeding tubes and RF switching tubes 33. Specifically, one end of the electric feeding assembly 6 is located outside the process chamber 1 of the semiconductor process equipment, for example, outside the side wall 11 of the process chamber 1, and is electrically connected to a DC power supply and / or an AC power supply (not shown in the figure), and the other end of the electric feeding assembly 6 is electrically connected to the chuck assembly 2 for feeding DC power and / or AC power into the chuck assembly 2. The electric feed-in component 6 can be used to feed direct current into the electrostatic adsorption electrode (not shown in the figure) in the chuck component 2 to achieve adsorption and fixation of the wafer; and / or, the electric feed-in component 6 can be used to feed alternating current into the heating element (not shown in the figure) in the chuck component 2 to achieve heating of the wafer by the heating element.

[0087] In some embodiments of the present application, in order to improve the ease of assembly and disassembly of the electrical feedthrough assembly 6 and improve maintenance efficiency, as shown in Figures 3 and 4, the electrical feedthrough assembly 6 includes at least two electrical feedthroughs and at least one electrical adapter 63. The number of electrical feedthroughs is the same as the number of RF feedthroughs, and each electrical feedthrough is arranged in a one-to-one correspondence at the location of each RF feedthrough; the number of electrical adapters 63 is the same as the number of RF adapter tubes 33, and each electrical adapter 63 is arranged in a one-to-one correspondence at the location of each RF adapter tube 33; each adjacent two electrical feedthroughs are detachably connected and electrically conductive via an electrical adapter 63. By detachably connecting the electrical feedthrough and the electrical adapter 63, the electrical feedthrough can be more conveniently assembled and disassembled, and the assembly consistency of each machine can be better ensured, thereby improving process consistency. Taking two electric feed-throughs as an example, as shown in FIG4 , the two electric feed-throughs are a first electric feed-through 61 and a second electric feed-through 62, both of which are cylindrical and have axes at a second angle, which is consistent with the first angle mentioned above; the electric adapter 63 is a bent cylindrical shape, and its axis is bent to form the second angle mentioned above. In this case, the axis of the first electric feed-through 61 is set horizontally, and the axis of the second electric feed-through 62 is set vertically. The first electric feed-through 61 is inserted into the first RF feed-through tube 31, and one end is electrically connected to a DC power supply and / or an AC power supply, and the other end is detachably connected to one end of the electric adapter 63 and electrically conductive; the second electric feed-through 62 is inserted into the second RF feed-through tube 32, and one end of the second electric feed-through 62 is detachably connected to the other end of the electric adapter 63 and electrically conductive; the other end of the second electric feed-through 62 is electrically connected to the chuck assembly 2. The electrical feedthrough can be disassembled and assembled in sections by removing or inserting the first electrical feedthrough 61 and the second electrical feedthrough 62, respectively, thereby improving installation and maintenance efficiency. Moreover, this split assembly method can better ensure the assembly consistency of each machine, thereby improving process consistency. In addition, in combination with the split RF feedthrough assembly 3, the RF feedthrough and the electrical feedthrough can be assembled separately to form an independent feedthrough split structure, and the RF adapter tube 33 and the RF adapter tube 33 can be assembled separately to form an independent adapter split structure. The feedthrough split structure and the adapter split structure are then assembled into a whole. This can maintain the assembly consistency of each split structure, thereby improving the overall assembly consistency of the machine and improving the chamber identity.

[0088] In some embodiments of the present application, as shown in Figures 4, 7 to 9, the electrical adapter 63 includes a first sub-adapter 631, a second sub-adapter 632, a plurality of first transfer wires 661 and a plurality of second transfer wires 662, wherein the first sub-adapter 631 and the second sub-adapter 632 are both made of an insulating material such as resin, and are columnar, and the axis thereof is at the second angle mentioned above; the first sub-adapter 631 has a first mating surface 634, and the second sub-adapter 632 has a first mating surface 635. The two mating surfaces 635, the first mating surface 634 and the second mating surface 635, are in contact with each other, and they form a third angle and a fourth angle with the axis of the first sub-adapter 631 and the second sub-adapter 632, respectively. The sum of the third angle and the fourth angle is equal to the second angle. For example, the third angle and the fourth angle are both 45 degrees. Of course, the embodiment of the present application is not limited to this. In actual applications, the third angle and the fourth angle can also be different, as long as the sum of the two angles is equal to the second angle. Taking the example of the first sub-adapter 631 being arranged horizontally and the second sub-adapter 632 being arranged vertically, the first mating surface 634 and the second mating surface 635 are both inclined at 45 degrees relative to the horizontal plane.

[0089] Multiple first adapter conductors 661 are arranged along the axis of the first sub-adapter 631 and are spaced apart from each other. Two of the first adapter conductors 661 are DC conductors for transmitting direct current, for example, located near the center of the axis of the first sub-adapter 631. Two of the remaining conductors are AC conductors for transmitting alternating current, for example, arranged around the two DC conductors. Multiple second adapter conductors 662 are arranged along the axis of the second sub-adapter 632 and are spaced apart from each other. One end of each second adapter conductor 662 and one end of each first adapter conductor 661 are located on the first mating surface 634 and the second mating surface 635, respectively, and are in one-to-one electrical contact or integral connection. Corresponding one-to-one with the plurality of first adapter wires 661, two of the plurality of second adapter wires 662 are DC wires for transmitting direct current, for example, located near the center of the axis of the second sub-adapter 632. Each of the remaining two wires is AC wire for transmitting alternating current, for example, located around the two DC wires. Both the plurality of first adapter wires 661 and the plurality of second adapter wires 662 are copper wires with a diameter of, for example, 2-3 mm, and possess high rigidity. These adapter wires have varying lengths due to their distribution at different locations on the mating surface of the sub-adapter. Taking the example of one end of each second transfer wire 662 and one end of each first transfer wire 661 being connected as one body in a one-to-one correspondence, during assembly, first, the second transfer wires 662 and the first transfer wires 661 connected as one body are installed in the corresponding mounting holes in the second sub-adapter 632. At this time, as shown in Figure 9, the first transfer wires 661 extend from the second mating surface 635 to the outside of the second sub-adapter 632, and then the first sub-adapter 631 is moved toward the second sub-adapter 632 along the direction of each first transfer wire 661, so that each first transfer wire 661 passes through the corresponding mounting hole in the first sub-adapter 631 until the first mating surface 634 and the second mating surface 635 are in contact. In some embodiments, in order to improve the fitting tightness between the first mating surface 634 and the second mating surface 635, at least one of the first mating surface 634 and the second mating surface 635 is provided with a colloid (not shown in the figure). The material of the colloid is, for example, the same as the material of the first sub-adapter 631 and the second sub-adapter 632, for example, both are resin, so that the first sub-adapter 631 and the second sub-adapter 632 can be approximately continuous at the mating surface to avoid the formation of gaps.

[0090] In some embodiments of the present application, in order to achieve the positioning of the first mating surface 634 and the second mating surface 635, and to ensure that one end of each second transfer wire 662 is in electrical contact with one end of each first transfer wire 661, as shown in Figures 8 and 9, one of the first mating surface 634 and the second mating surface 635 is provided with a first positioning protrusion 635a; the other of the first mating surface 634 and the second mating surface 635 is provided with a first positioning recess 634a; the first positioning protrusion 635a is matched with the first positioning recess 634a. Furthermore, in some embodiments, to improve the voltage resistance of the patch cords at the connection point and ensure isolation between the patch cords, as shown in FIG9 , the number of first positioning protrusions 635a is equal to the number of the first patch cords 661 and the second patch cords 662. Each first positioning protrusion 635a is arc-shaped and surrounds one of the first patch cords 661 and the second patch cord 662 in a one-to-one correspondence. Each first positioning recess 634a is arc-shaped and surrounds the other of the first patch cords 661 and the second patch cord 662 in a one-to-one correspondence. Specifically, the first positioning protrusions 635a are, for example, semicircular protrusions, and the shape of the first positioning recesses 634a matches that of the first positioning protrusions 635a.

[0091] In some embodiments of the present application, the first sub-adapter 631 and the second sub-adapter 632 both have a mating surface 633. As shown in FIG4 , each of two adjacent electrical feed-throughs (e.g., the first electrical feed-through 61 and the second electrical feed-through 62) includes an insulating cylinder and a plurality of feeding wires 64. The insulating cylinder is made of an insulating material such as resin, for example. As shown in FIG4 and FIG10 , a first end surface 621 of the insulating cylinder is in contact with the mating surface 633 of the first sub-adapter 631 or the second sub-adapter 632. The plurality of feeding wires 64 are disposed along the axis of the insulating cylinder and are spaced apart from each other. One end of each feeding wire 64 and the other end of each first transfer wire 661 or the second transfer wire 662 are respectively located at the first end surface 621 and the mating surface 633, and are in one-to-one electrical contact. Corresponding one-to-one with the plurality of first transfer wires 661 or the second transfer wires 662, two of the plurality of feed wires 64 are DC wires for transmitting DC power, for example, arranged near the center position of the axis of the insulating cylinder; each of the remaining two wires is an AC wire for transmitting AC, for example, arranged around the two DC wires.

[0092] Taking two electrical feedthroughs as an example, the mating surface 633 of the first sub-adapter 631 mates with the first end surface 621 of the insulating cylinder of the first electrical feedthrough 61, and the mating surface 633 of the second sub-adapter 632 mates with the first end surface 621 of the insulating cylinder of the second electrical feedthrough 62. Each first transfer conductor 661 in the first sub-adapter 631 is in electrical contact with each feeding conductor 64 of the first electrical feedthrough 61 in a one-to-one correspondence; and each second transfer conductor 662 in the second sub-adapter 632 is in electrical contact with each feeding conductor 64 of the second electrical feedthrough 62 in a one-to-one correspondence.

[0093] In some embodiments of the present application, in order to achieve the positioning of the insulating column and the first sub-adapter 631 and the second sub-adapter 632, as shown in Figures 4 and 10, the docking surface 633 and one of the first end surfaces 621 are provided with a second positioning protrusion 621a; the docking surface 633 and the other of the first end surfaces 621 are provided with a second positioning recess 631a; the second positioning protrusion 621a and the second positioning recess 631a are matched. The specific structures of the second positioning protrusion 621a and the second positioning recess 631a can be various. For example, as shown in Figure 10, the number of the second positioning protrusions 621a is the same as the number of the feeding wires 64; and each second positioning protrusion 621a is annular and surrounds each feeding wire 64 in a one-to-one correspondence; each second positioning recess 631a is annular and surrounds the first transfer wire 661 or the second transfer wire 662 in a one-to-one correspondence. By using the annular second positioning protrusion 621a and the second positioning recess 631a to cooperate with each other, the corresponding feeding wire 64 is not exposed, and the multiple feeding wires 64 are completely isolated from each other by the annular second positioning protrusion 621a. In addition, the annular second positioning protrusion 621a can also increase the creepage distance of the corresponding feeding wire 64, thereby enhancing the stability of the overall coordination and the safety of the feeding wires 64, and ultimately improving the overall voltage resistance performance. Of course, the embodiments of the present application are not limited to this. In actual applications, each second positioning protrusion 621a may be annular and surround each first transfer wire 661 or second transfer wire 662 in a one-to-one correspondence; each second positioning recess 631a may be annular and surround each feed wire 64 in a one-to-one correspondence. Furthermore, in some embodiments, the height of the second positioning protrusion 621a is, for example, 2 mm to 3 mm. In some embodiments, to facilitate insertion of the second positioning protrusion 621a into the second positioning recess 631a, the second positioning protrusion 621a is, for example, a frustum, and the second positioning recess 631a is, for example, a frustum-shaped hole whose shape matches the frustum.

[0094] In some embodiments of the present application, as shown in FIG8 , the other end of each first transfer conductor 661 and each second transfer conductor 662 (i.e., the end away from the first mating surface 634 and the second mating surface 635) is provided with a connection recess 661a; one end of each feed conductor 64 is provided with a connection protrusion, which cooperates with the connection recess 661a and is in electrical contact. In this way, the feed conductor 64 and the first transfer conductor 661 or the second transfer conductor 662 can be plugged into each other, thereby improving the voltage resistance performance of the feed conductor 64 and the first transfer conductor 661 or the second transfer conductor 662 at the plug-in portion. Of course, the embodiments of the present application are not limited to this. In actual applications, the other end of each first transfer conductor 661 and each second transfer conductor 662 can also be provided with a connection protrusion; one end of each feed conductor 64 is provided with a connection recess 661a, and the connection protrusion cooperates with the connection recess 661a and is in electrical contact. In addition, in some embodiments, the depth of the connecting recess 661a is 5 mm-15 mm, for example, 10 mm.

[0095] In some embodiments of the present application, as shown in FIG10 , the connecting protrusion includes a conductive extension portion 641 extending from the first end surface 621 or the mating surface 633, and a conductive elastic portion 67 removably mounted on the conductive extension portion 641. Both the conductive extension portion 641 and the conductive elastic portion 67 are located within the connecting recess 661a, with the conductive elastic portion 67 being compressed. The radially expanding elastic force of the conductive elastic portion 67 increases the contact area and tightness between the conductive extension portion 641 and the connecting recess 661a, thereby ensuring proper fit and electrical contact stability. The conductive elastic portion 67 can have various structures. For example, the conductive elastic portion 67 can be a cylindrical structure with a slit on its outer periphery. The outer diameter of the cylindrical structure decreases along its axial direction from its center toward its ends. During installation, the conductive elastic portion 67 can be expanded through the slit. When no external force is applied to the conductive elastic portion 67, it can return to its cylindrical structure under its own elastic force, thereby wrapping around the outer periphery of the conductive extension portion 641. In addition, the maximum outer diameter of the cylindrical structure is greater than the inner diameter of the connecting recess 661a. This keeps the conductive elastic portion 67 compressed when it enters the connecting recess 661a, thereby generating a radially expanding elastic force toward the outer periphery.

[0096] In some embodiments of the present application, as shown in FIG11 , a countersunk hole 623 is provided on the second end surface 622 of the insulating cylinder (away from the first end surface 621) at the location corresponding to each feed wire 64, with the other end of each feed wire 64 located in the countersunk hole 623. Thus, the elastic terminals for the voltage input and output of the DC or AC power supply can be embedded in the countersunk hole 623 and electrically connected to the feed wire 64 in the countersunk hole 623, thereby protecting the wire connection location.

[0097] In summary, the lower electrode feeding device provided by the embodiment of the present application adopts a split RF feeding assembly, that is, at least two RF feeding tubes and at least one RF transfer tube, and utilizes a first mating portion provided on each two adjacent RF feeding tubes to respectively cooperate with two second mating portions provided on the RF transfer tube, so that the RF transfer tube can be detachably connected to the two adjacent RF feeding tubes and electrically conductive. This detachable connection method can more conveniently disassemble and assemble the RF feeding tube, thereby improving the installation and maintenance efficiency. On this basis, since the split RF feeding assembly is easier to disassemble and assemble, a solid medium can be selected to be arranged in the gap formed between the inner periphery of the shielding assembly and the outer periphery of the RF feeding assembly, and there is no problem of the solid medium being difficult to disassemble and assemble. This is compared with the prior art in which the air medium is used because the lower electrode feeding device is difficult to disassemble and assemble. The use of solid media can design different first withstand voltage safety distances, thereby meeting different requirements for the space where the lower electrode is located. For example, by adopting a solid medium with a dielectric constant greater than that of the air medium, the first withstand voltage safety distance can be reduced, thereby reducing the occupied space of the lower electrode feed device, and more space can be used to optimize other lower electrode components.

[0098] As another technical solution, as shown in FIG3 , an embodiment of the present application further provides a semiconductor processing device, comprising a process chamber 1 and a chuck assembly 2 disposed in the process chamber 1 , and the above-mentioned lower electrode feeding device provided in an embodiment of the present application.

[0099] In some embodiments of the present application, as shown in Figure 3, the chuck assembly 2 includes a chuck body 21 for carrying a wafer, an interface plate 23 arranged below the chuck body 21, and an annular insulating member 22 connected between the chuck body 21 and the interface plate 23. The lower surface of the chuck body 21, the upper surface of the interface plate 23 and the inner circumferential surface of the annular insulating member 22 constitute an internal space 25; in the RF feeding assembly 3, one end of the RF feeding tube closest to the chuck assembly 2 (such as the above-mentioned second RF feeding tube 32) extends into the internal space 25 and is electrically connected to the chuck body 21. Furthermore, in some embodiments, a circuit board assembly 24 is provided at the bottom of the chuck body 21 and in the internal space 25. The circuit board assembly 24 is used to realize the connection of each feed wire 64 in the electric feed assembly 6 to the corresponding feed end in the chuck body 21 through its own circuit, thereby realizing the feeding of direct current into the electrostatic adsorption electrode in the chuck body 21 to realize the adsorption and fixation of the wafer; and / or, the feeding of alternating current into the heating element in the chuck body 21 to realize the heating element heating the wafer.

[0100] In some embodiments of the present application, in order to realize the feeding of RF current from the edge of the chuck body 21, as shown in Figures 3 and 4, the RF feeding assembly 3 further includes: an RF feeding disk 37, which is arranged in the above-mentioned internal space 25 and is located at the bottom of the circuit board assembly 24, and the outer periphery of the RF feeding disk 37 is provided with an annular connecting portion 371, which is arranged at intervals around the outer periphery of the circuit board assembly 24 and is connected to the chuck body 21.

[0101] In some embodiments of the present application, the RF feed disk 37 is provided with a center hole, and one end of the RF feed tube closest to the chuck assembly 2 (e.g., the second RF feed tube 32) is connected to the inner periphery of the RF feed disk 37 (i.e., the wall of the center hole) and is electrically conductive; the electrical feed assembly 6 (e.g., the second electrical feed component 62) passes through the interface disk 23 and the center hole of the RF feed disk 37 in sequence and is electrically connected to the circuit board assembly 24, for feeding direct current and / or alternating current into the chuck body 21 through the circuit board assembly 24. In some embodiments, in order to ensure electrical insulation between the RF feed tube closest to the chuck assembly 2 (e.g., the second RF feed tube 32) and the interface disk 23, a portion of the insulating dielectric member 4 is passed through the center hole of the interface disk 23 to electrically isolate the wall of the center hole from the RF feed tube closest to the chuck assembly 2 (e.g., the second RF feed tube 32).

[0102] In some embodiments of the present application, a preset second withstand voltage safety distance is provided between the lower surface of the RF feed disk 37 and the upper surface of the interface disk 23. The second withstand voltage safety distance is, for example, 30mm-60mm, to ensure that there is sufficient RF safety distance between the RF feed disk 37 and the interface disk 23. On this basis, under the premise that the height of the chuck body 21 remains unchanged, it is necessary to adjust the height of the interface disk 23 to achieve the setting of the above-mentioned second withstand voltage safety distance. Specifically, the interface disk 23 is supported by an annular base 7, and the annular base 7 is supported by a base 8. Under the premise that the height of the base 8 remains unchanged, the setting of the above-mentioned second withstand voltage safety distance can be achieved by designing the vertical distance between the lower surface of the interface disk 23 and the upper surface of the base 8. In some embodiments, the vertical distance is 60mm-120mm.

[0103] The semiconductor processing equipment provided by the embodiment of the present application adopts the above-mentioned lower electrode feeding device provided by the embodiment of the present application, which not only allows for more convenient disassembly and assembly of the RF feeding tube, thereby improving installation and maintenance efficiency, but also allows this split assembly method to better ensure the assembly consistency of each machine, thereby improving process consistency. In addition, solid-state media can be selected without the problem of solid-state media being difficult to disassemble and assemble, thereby reducing the space occupied by the lower electrode feeding device, allowing more space to be used to optimize other lower electrode components.

[0104] It is understood that the above embodiments are merely exemplary embodiments for illustrating the principles of the present application, and the present application is not limited thereto. Those skilled in the art may make various modifications and improvements without departing from the spirit and substance of the present application, and such modifications and improvements are also considered to be within the scope of protection of the present application.

Claims

1. A lower electrode feeding device, applied to semiconductor process equipment, characterized in that: It includes a radio frequency feed assembly, one end of which is used to be electrically connected to a radio frequency source, and the other end of which is used to be electrically connected to a chuck assembly; the radio frequency feed assembly includes at least two radio frequency feed tubes and at least one radio frequency transfer tube; wherein, Each two adjacent RF feeding tubes are provided with a first matching portion, and the RF switching tube is provided with two second matching portions, and the two second matching portions respectively match with the first matching portions of the two adjacent RF feeding tubes, so that the RF switching tube is respectively detachably connected to the two adjacent RF feeding tubes and electrically conductive.

2. The lower electrode feeding device according to claim 1, characterized in that: The detachable connection is plug-in, one of the first matching portion and the second matching portion is a first ring portion, the other of the first matching portion and the second matching portion is a second ring portion, and the first ring portion is sleeved on the outer circumference of the second ring portion.

3. The lower electrode feeding device according to claim 2, characterized in that: A conductive elastic member is disposed between the inner circumference of the first ring portion and the outer circumference of the second ring portion.

4. The lower electrode feeding device according to claim 2, characterized in that: Every two adjacent RF feeding tubes are straight tubes, and their axes form a first angle; the RF transfer tube is a bent tube, and its axis is bent to form the first angle; One end of each of the two adjacent RF feeding tubes is provided with the first ring portion, and two ends of the RF switching tube are respectively provided with two second ring portions.

5. The lower electrode feeding device according to claim 2, characterized in that: The inner diameter of the RF feed tube is smaller than the inner diameter of the first ring portion, and the outer diameter of the RF transfer tube is larger than the outer diameter of the second ring portion; and the inner diameter of the RF feed tube is equal to the inner diameter of the RF transfer tube, and the outer diameter of the RF feed tube is equal to the outer diameter of the RF transfer tube.

6. The lower electrode feeding device according to claim 4, characterized in that: A first arc transition portion is formed on the outer peripheral surface of the radio frequency adapter at the first angle.

7. The lower electrode feeding device according to claim 4, characterized in that: The radio frequency switching tube includes two semi-annular parts, and the two semi-annular parts are connected to each other to form the bent tube.

8. The lower electrode feeding device according to claim 1, characterized in that: The lower electrode feeding device also includes: The shielding component is sleeved on the outer periphery of the radio frequency feeding component and is used for shielding the radiation generated by the radio frequency, and a gap is formed between the inner periphery of the shielding component and the outer periphery of the radio frequency feeding component.

9. The lower electrode feeding device according to claim 8, characterized in that: The lower electrode feeding device also includes: An insulating dielectric member is disposed in the gap and is used to maintain a preset first withstand voltage safety distance between the shielding component and the radio frequency feeding component.

10. The lower electrode feeding device according to claim 9, characterized in that: The insulating dielectric member comprises an insulating sleeve sleeved on the outer periphery of the RF feed assembly; the shielding assembly is sleeved on the outer periphery of the insulating sleeve; or, The insulating dielectric member includes an insulating dielectric material filled in the gap.

11. The lower electrode feeding device according to any one of claims 1 to 10, characterized in that: The lower electrode feeding device further comprises: an electrical feeding assembly, The electrical feed-in assembly is arranged through all the RF feed-in tubes and the RF transfer tubes. The hollow space formed by the inner circumferential surfaces is used to feed direct current and / or alternating current into the chuck assembly.

12. The lower electrode feeding device according to claim 11, characterized in that: The electrical feed-in assembly comprises at least two electrical feed-ins and at least one electrical adapter, the number of the electrical feed-ins is the same as the number of the radio frequency feed-in tubes, and the electrical feed-ins are arranged one-to-one at the positions of the radio frequency feed-in tubes; the number of the electrical adapters is the same as the number of the radio frequency adapter tubes, and the electrical adapters are arranged one-to-one at the positions of the radio frequency adapter tubes; Every two adjacent electrical feed-in components are detachably connected through one electrical adapter and are electrically conductive.

13. The lower electrode feeding device according to claim 12, characterized in that: The electrical adapter comprises a first sub-adapter, a second sub-adapter, a plurality of first adapter wires and a plurality of second adapter wires, wherein: The first sub-adapter and the second sub-adapter are both made of insulating material and are columnar, and their axes are at a second angle, and the second angle is consistent with the angle between the axes of each two adjacent RF feeding tubes; the first sub-adapter has a first mating surface, and the second sub-adapter has a second mating surface, the first mating surface is in contact with the second mating surface, and the first and second mating surfaces are at a third and fourth angles with the axes of the first and second sub-adapters, respectively, and the sum of the third and fourth angles is equal to the second angle; A plurality of the first transfer wires are arranged in the first sub-transfer component along the axis of the first sub-transfer component, and the plurality of the first transfer wires are arranged at intervals from each other; A plurality of second transfer wires are arranged in the second sub-transfer component along the axis of the second sub-transfer component, and the plurality of second transfer wires are arranged at intervals from each other; one end of each of the second transfer wires and one end of each of the first transfer wires are respectively located on the first mating surface and the second mating surface, and are electrically contacted or connected in a one-to-one correspondence.

14. The lower electrode feeding device according to claim 13, characterized in that: One of the first mating surface and the second mating surface is provided with a first positioning protrusion; the other of the first mating surface and the second mating surface is provided with a first positioning recess; the first positioning protrusion is matched with the first positioning recess.

15. The lower electrode feeding device according to claim 14, characterized in that: The number of the first positioning protrusions is the same as the number of the first switching conductors and the second switching conductors, and each of the first positioning protrusions is in an arc shape and surrounds one of the first switching conductors and the second switching conductors in a one-to-one correspondence; each of the first positioning recesses is in an arc shape and surrounds the other of the first switching conductors and the second switching conductors in a one-to-one correspondence.

16. The lower electrode feeding device according to claim 14, characterized in that: The first sub-adapter and the second sub-adapter both have a butt joint surface; Each of the two adjacent electrical feed-in components comprises an insulating column and a plurality of feed-in wires, wherein the first end surface of the insulating column is in contact with the butt joint surface of the first sub-transition component or the second sub-transition component; A plurality of the feeding wires are arranged in the insulating cylinder along the axis of the insulating cylinder, and the plurality of the feeding wires are arranged at intervals from each other; one end of each of the feeding wires and the other end of each of the first switching wires or the second switching wires are respectively located on the first end surface and the docking surface, and are in one-to-one electrical contact.

17. The lower electrode feeding device according to claim 16, characterized in that: One of the butt joint surface and the first end surface is provided with a second positioning protrusion; the other of the butt joint surface and the first end surface is provided with a second positioning recess; the second positioning protrusion matches with the second positioning recess.

18. The lower electrode feeding device according to claim 17, characterized in that: The number of the second positioning protrusions is the same as the number of the feeding wires; Each of the second positioning protrusions is annular and surrounds each of the feeding wires in a one-to-one correspondence; each of the second positioning recesses is annular and surrounds the first switching wire or the second switching wire in a one-to-one correspondence; or, Each of the second positioning protrusions is annular and surrounds each of the first switching conductors or the second switching conductors in a one-to-one correspondence; each of the second positioning recesses is annular and surrounds each of the feeding conductors in a one-to-one correspondence.

19. The lower electrode feeding device according to claim 16, characterized in that: The other end of each of the first switching conductors and each of the second switching conductors is provided with a connection recess; one end of each of the feeding conductors is provided with a connection protrusion, and the connection protrusion matches and electrically contacts the connection concave; or, The other end of each of the first switching conductors and each of the second switching conductors is provided with a connection protrusion; one end of each of the feeding conductors is provided with a connection recess, and the connection protrusion matches with the connection recess and is in electrical contact.

20. The lower electrode feeding device according to claim 19, characterized in that: The connecting protrusion includes a conductive extension portion extending from the first end surface or the mating surface, and a conductive elastic portion detachably sleeved on the conductive extension portion, the conductive extension portion and the conductive elastic portion are both located in the connecting recess, and the conductive elastic portion is in a compressed state.

21. The lower electrode feeding device according to claim 16, characterized in that: A countersunk hole is arranged at a position corresponding to each of the feeding wires on the second end surface of the insulating column, and the other end of each of the feeding wires is located in the countersunk hole.

22. A semiconductor processing device, comprising a process chamber and a chuck assembly disposed in the process chamber, characterized in that: It also includes the lower electrode feeding device as described in any one of claims 1-21.

23. The semiconductor processing equipment according to claim 22, characterized in that The chuck assembly comprises a chuck body for carrying a wafer, an interface plate arranged below the chuck body, and an annular insulating member connected between the chuck body and the interface plate, wherein the lower surface of the chuck body, the upper surface of the interface plate and the inner circumference of the annular insulating member constitute an internal space; In the RF feeding assembly, one end of the RF feeding tube closest to the chuck assembly extends into the internal space and is electrically connected to the chuck body.

24. The semiconductor processing equipment according to claim 23, characterized in that A circuit board assembly is also arranged at the bottom of the chuck body and in the internal space; The RF feed assembly further includes: a RF feed plate, the RF feed plate is arranged in the internal space and located at the bottom of the circuit board assembly, and an annular connecting portion is arranged on the outer periphery of the RF feed plate, the annular connecting portion is arranged around the outer periphery of the circuit board assembly at intervals and connected to the chuck body; The RF feeding disk is provided with a central hole, and one end of the RF feeding tube closest to the chuck assembly is connected to the inner periphery of the RF feeding disk and is electrically conductive.

25. The semiconductor processing equipment according to claim 24, characterized in that The lower electrode feeding device further comprises an electric feeding assembly, and the electric feeding assembly is arranged in a hollow space formed by the inner circumference of all the RF feeding tubes and the RF switching tube; The electric feed-in assembly is electrically connected to the circuit board assembly through the central hole, and is used to feed direct current and / or alternating current into the chuck body through the circuit board assembly.

26. The semiconductor processing equipment according to claim 24, characterized in that A preset second voltage-resistant safety distance is set between the lower surface of the RF feeding plate and the upper surface of the interface plate.

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