Inspection device, inspection system, inspection method, and semiconductor device manufacturing method

Abstract

Provided are an inspection device, an inspection system, an inspection method, and a semiconductor device manufacturing method which are capable of improving efficiency. According to an embodiment, this inspection device includes a control unit electrically connected to a semiconductor device. The semiconductor device includes a semiconductor member, a transistor part, and a diode part. The transistor part includes a source electrode, a drain electrode, and a gate electrode. The control unit can perform a first operation, a first elapsed operation, a second operation, and a first determination operation. In the first operation, the control unit sets the gate electrode to an ON potential and detects the drain potential in a state in which a current source is connected to the drain electrode. In the first elapsed operation, the control unit sets the gate electrode to an OFF potential in a state in which the current source is connected to the drain electrode. In the second operation, the control unit sets the gate electrode to an ON potential and detects the drain potential. In the first determination operation, the control unit inspects the semiconductor device on the basis of the difference between detection values.

Description

Inspection device, inspection system, inspection method, and semiconductor device manufacturing method

[0001] FIELD Embodiments of the present invention relate to an inspection device, an inspection system, an inspection method, and a method for manufacturing a semiconductor device.

[0002] For example, in the manufacture of semiconductor devices, semiconductor devices are inspected, and it is desirable to improve the efficiency of the inspection.

[0003] Japanese Patent Application Laid-Open No. 2022-105804

[0004] The embodiments provide an inspection device, an inspection system, an inspection method, and a method for manufacturing a semiconductor device that can improve efficiency.

[0005] According to an embodiment, an inspection apparatus includes a control unit electrically connected to a semiconductor device. The semiconductor device includes a semiconductor member, a transistor unit, and a diode unit. The transistor unit and the diode unit are provided on the semiconductor member. The transistor unit includes a source electrode, a drain electrode, and a gate electrode. The diode unit includes a first end and a second end. The first end is electrically connected to the source electrode. The second end is electrically connected to the drain electrode. The control unit is capable of performing a first operation, a first elapsed operation, a second operation, and a first determination operation. The first elapsed operation is performed after the first operation. The second operation is performed after the first elapsed operation. In the first operation, the control unit sets the gate electrode to an on potential with a current source electrically connected to the drain electrode, and detects a first detection value of the drain potential of the drain electrode. The current source is capable of supplying a first current to the drain electrode in a direction from the drain electrode to the source electrode. In the first elapsed operation, the control unit sets the gate electrode to an off potential with the current source electrically connected to the drain electrode. In the second operation, the control unit sets the gate electrode to the on potential with the current source electrically connected to the drain electrode, and detects a second detection value of the drain potential. In the first determination operation, the control unit inspects the semiconductor device based on a difference between the first detection value and the second detection value.

[0006] Fig. 1 is a schematic diagram illustrating an inspection apparatus according to a first embodiment. Fig. 2 is a flowchart illustrating the operation of the inspection apparatus according to the first embodiment. Figs. 3(a) and 3(b) are schematic diagrams illustrating the operation of the inspection apparatus according to the first embodiment. Fig. 4 is a flowchart illustrating a method for manufacturing a semiconductor device according to a fourth embodiment.

[0007] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In this specification and the drawings, elements similar to those described above with reference to the previous drawings are designated by the same reference numerals, and detailed descriptions thereof will be omitted as appropriate.

[0008] First Embodiment FIG. 1 is a schematic diagram illustrating an inspection apparatus according to a first embodiment. As shown in FIG. 1, an inspection apparatus 210 according to the embodiment includes a control unit 70. The control unit 70 can be electrically connected to a semiconductor device 10 to be inspected. The inspection apparatus 210 may further include a memory unit 72. The memory unit 72 may be provided separately from the inspection apparatus 210. The memory unit 72 may be provided in a location separate from where the control unit 70 is provided. An inspection system 310 according to the embodiment includes the control unit 70 and the memory unit 72.

[0009] 1, the semiconductor device 10 includes a semiconductor member 55, a transistor section 50, and a diode section 60. The transistor section 50 and the diode section 60 are provided in the semiconductor member 55. The transistor section 50 is provided in a part of the semiconductor member 55, and the diode section 60 is provided in another part of the semiconductor member 55. For example, the semiconductor device 10 is a transistor incorporating the diode section 60. The transistor section 50 and the diode section 60 are provided on a single chip.

[0010] The semiconductor member 55 includes, for example, SiC. For example, the diode section 60 may be a Schottky diode.

[0011] The transistor section 50 includes a source electrode 50S, a drain electrode 50D, and a gate electrode 50G. The diode section 60 includes a first end 61 and a second end 62. The first end 61 is electrically connected to the source electrode 50S. The second end 62 is electrically connected to the drain electrode 50D. The first end 61 is common to the source electrode 50S. The second end 62 is common to the drain electrode 50D.

[0012] For example, the inspection device 210 may include a plurality of probes. For example, the inspection device 210 includes a drain probe 75D and a gate probe 75G. The drain probe 75D can be electrically connected to the drain electrode 50D. The gate probe 75G can be electrically connected to the gate electrode 50G. The source electrode 50S can be electrically connected to the control unit 70 via a ground conductive member, for example.

[0013] A voltage is applied to the semiconductor device 10 via these probes, and the semiconductor device 10 is inspected.

[0014] 1, testing may be performed on a plurality of semiconductor devices 10. In this case, a plurality of drain probes 75D and a plurality of gate probes 75G may be provided.

[0015] 1, in the inspection device 210, the control unit 70 may include a power supply 73P, a switch unit 73S, and a detection circuit 73D. In various operations described below, the switch unit 73S applies a gate voltage from the power supply 73P to the gate electrode 50G at a desired timing.

[0016] The detection circuit 73D can detect, for example, the potential of the drain electrode 50D. The detection circuit 73D can detect values ​​related to the electrical characteristics of the semiconductor device 10 based on, for example, the timing of various operations described below. For example, an operation based on an interlock signal may be performed. For example, a synchronization signal may be supplied to the detection circuit 73D from the switch unit 73S.

[0017] 1, a current source 74c may be provided. The current source 74c is electrically connected to the drain electrode 50D. The current source 74c is capable of supplying a first current to the drain electrode 50D in a direction from the drain electrode 50D to the source electrode 50S. The operation of the current source 74c may be controlled by, for example, the detection circuit 73D.

[0018] The power supply 73P may be prepared separately from the inspection device 210. The power supply 73P may be included in the inspection device 210. The current source 74c may be prepared separately from the inspection device 210. The current source 74c may be included in the inspection device 210.

[0019] As shown in Fig. 1, a processing unit 71 may be provided. As shown in Fig. 1, a storage unit 72 may be provided. The processing unit 71 is capable of processing various types of data. For example, the processing unit 71 is capable of processing detected values. The processing unit 71 may store the processed values ​​in the storage unit 72. The processing unit 71 may be capable of performing a process of comparing a value based on the detected values ​​with a reference value or the like. For example, the result of the comparison corresponds to the inspection result of the semiconductor device 10.

[0020] The processing unit 71 may be included in the control unit 70. The processing unit 71 may be provided in a location different from where the switch unit 73S and the like are provided. The storage unit 72 may be included in the control unit 70. The storage unit 72 may be provided in a location different from where the switch unit 73S and the like are provided.

[0021] The control unit 70 can inspect the semiconductor device 10 by performing the operation described below.

[0022] 2 is a flowchart illustrating the operation of the inspection apparatus according to the first embodiment. As shown in FIG. 2, in the inspection apparatus 210, the control unit 70 can perform a first operation OP1, a first transition operation OE1, a second operation OP2, and a first determination operation DC1. The first transition operation OE1 is performed after the first operation OP1. The second operation OP2 is performed after the first transition operation OE1. The first determination operation DC1 is performed after the second operation OP2. The second determination operation DC2 may also be performed. Examples of these operations will be described below.

[0023] 3(a) and 3(b) are schematic diagrams illustrating the operation of the inspection device according to the first embodiment. These diagrams correspond to time charts of the operation. The horizontal axis of these diagrams represents time tm. The vertical axis of FIG. 3(a) represents gate voltage Vgs. The gate voltage Vgs is the voltage of the gate electrode 50G relative to the potential of the source electrode 50S. The vertical axis of FIG. 3(b) represents drain potential Vsd. The drain potential Vsd is the voltage of the drain electrode 50D relative to the potential of the source electrode 50S.

[0024] As shown in FIG. 1 , in the following operations, the current source 74c is electrically connected to the drain electrode 50D. As shown in FIG. 3B , in a first operation OP1, the control unit 70 sets the gate electrode 50G to an on potential Von during a first period TP1 with the current source 74c electrically connected to the drain electrode 50D. In the first operation OP1, the current source 74c can supply a first current to the drain electrode 50D in a direction from the drain electrode 50D to the source electrode 50S. The first period TP1 is, for example, a period from a first time t1 to a second time t2.

[0025] 3B, in the first operation OP1, the control unit 70 detects a first detection value VD1 of the drain potential Vsd of the drain electrode 50D. In the first operation OP1, the control unit 70 may store the first detection value VD1 in the storage unit 72.

[0026] 3A, in the first elapsed operation OE1, the control unit 70 sets the gate electrode 50G to the off potential Voff during a first elapsed period TE1 with the current source 74c electrically connected to the drain electrode 50D. The first elapsed period TE1 is, for example, the period from the second time t2 to the third time t3.

[0027] As shown in FIG. 3B, during the first elapsed period TE1, the drain potential Vsd becomes, for example, a first elapsed period potential VDE.

[0028] As shown in FIG. 3A, in the second operation OP2, the control unit 70 sets the gate electrode 50G to the on potential Von during the second period TP2 in a state in which the current source 74c is electrically connected to the drain electrode 50D.

[0029] 3B, in the second operation OP2, the control unit 70 detects a second detection value VD2 of the drain potential Vsd. The control unit 70 may store the second detection value VD2 in the storage unit 72.

[0030] In first determining operation DC1, control unit 70 can inspect semiconductor device 10 based on difference ΔV (see FIG. 3B) between first detection value VD1 and second detection value VD2.

[0031] As described above, in the embodiment, in the first operation OP1, the first detected value VD1 of the drain potential Vsd is detected as an initial value. Thereafter, in the first elapsed operation OE1, the gate electrode 50G is set to the off potential Voff, and the current source 74c is supplied to the drain electrode 50D. In this first elapsed operation OE1, the state of the semiconductor member 55 in the semiconductor device 10 may change. For example, holes are injected from the drain electrode 50D into the semiconductor member 55, causing crystal defects to expand. The expansion of the crystal defects causes changes in the characteristics of the semiconductor device 10. For example, the forward voltage VF changes.

[0032] In a second operation OP2 after the first transitional operation OE1, a second detection value VD2 of the drain potential Vsd is detected. If the state of the semiconductor member 55 changes in the first transitional operation OE1, the second detection value VD2 changes from the first detection value VD1. On the other hand, if the state of the semiconductor member 55 does not substantially change in the first transitional operation OE1, the second detection value VD2 is substantially the same as the first detection value VD1.

[0033] A change in the state of the semiconductor member 55 can be detected based on the difference ΔV between the first detection value VD1 and the second detection value VD2. For example, the difference ΔV is compared with a threshold value. If the difference ΔV is equal to or less than the threshold value, the semiconductor device 10 is determined to be a non-defective product. If the difference ΔV exceeds the threshold value, the semiconductor device 10 is determined to be a defective product. This first determination operation DC1 makes it possible to inspect the semiconductor device 10 with high efficiency. According to the embodiment, an inspection device capable of improving efficiency can be provided.

[0034] For example, there is a first reference example in which a change in the state of the semiconductor member 55 is evaluated by detecting a change in the forward voltage VF. The sensitivity of the change in the forward voltage VF detected in the first reference example is low. Therefore, in the first reference example, it is difficult to detect the change in the state of the semiconductor member 55 with high sensitivity.

[0035] In contrast, in the embodiment, the first detection value VD1 and the second detection value VD2 are detected when the on-potential Von is applied to the gate electrode 50G. These detection values ​​reflect the characteristics of the on-resistance Ron. The sensitivity to changes in these detection values ​​is high. In the embodiment, a highly sensitive result can be obtained by evaluating the difference ΔV between the first detection value VD1 and the second detection value VD2.

[0036] In this embodiment, the synchronous rectification mode operation illustrated in Figures 3(a) and 3(b) is performed. Rectification is performed in synchronization with the on / off of the gate voltage Vgs. High-precision detection can be performed with high efficiency.

[0037] For example, in a MOS transistor including a reverse conducting diode, when a current is passed through the reverse conducting diode, crystal defects present in the semiconductor member 55 (e.g., a SiC layer) expand. When the crystal defects expand, the forward voltage VF increases, and the on-resistance Ron increases. Chips that exhibit such characteristic variations due to the passage of current through the reverse conducting diode are excluded by inspection. In an embodiment, an inspection device capable of efficiently detecting defective products can be provided.

[0038] 3A, the on-potential Von and the off-potential Voff may satisfy the following first or second condition. In the first condition, the on-potential Von is positive with respect to the source potential of the source electrode 50S. In the first condition, the off-potential Voff is negative with respect to the source potential.

[0039] Under the second condition, the on-potential Von and the off-potential Voff are positive with respect to the source potential, and a first difference between the off-potential Voff and the source potential is smaller than a second difference between the on-potential Von and the source potential.

[0040] In one example, the on potential Von may be greater than or equal to +10V and less than or equal to +30V (eg, +15V). In one example, the off potential Voff may be greater than or equal to -8V and less than or equal to -1V (eg, -5V).

[0041] In the embodiment, the first elapsed period TE1 is longer than the second period TP2. The longer first elapsed period TE1 allows the crystal defects to expand efficiently. The shorter second period TP2 allows the inspection time to be shortened.

[0042] In one example, the first period TP1 is longer than the second period TP2. The long first period TP1 for detecting the initial state allows the first detection value VD1 to be stably detected.

[0043] In one example, the first elapsed period TE1 may be shorter than the first period TP1.

[0044] The length of the first period TP1 may be, for example, 0.1 s or more and 15 s or less, the length of the first elapsed period TE1 may be, for example, 1 ms or more and 1 H or less, and the length of the second period TP2 may be, for example, 100 μs or more and 15 s or less.

[0045] For example, the control unit 70 may be able to detect the first detection value VD1 at any time during the first period TP1, and the control unit 70 may be able to detect the second detection value VD2 at any time during the second period TP2.

[0046] For example, the control unit 70 may be able to detect the first detection value VD1 at a first end time of the first period TP1, and the control unit 70 may be able to detect the second detection value VD2 at a second end time of the second period TP2.

[0047] 3A and 3B, the first and second operations OE1 and OP2 may be repeatedly performed. For example, the control unit 70 may be capable of performing another first operation OE1 after the second operation OP2. The control unit 70 may be capable of performing another second operation OP2 after the other first operation OE1.

[0048] 2, the first transition operation OE1, the second operation OP2, and the first determination operation DC1 may be repeatedly performed. A determination (first determination operation DC1) may be performed for each of the multiple repetitions.

[0049] For example, when the number of repeated operations exceeds a predetermined number, a second determining operation DC2 may be performed. In the second determining operation DC2, the semiconductor device 10 is inspected based on the results of the first determining operation DC1 performed multiple times. For example, the second determining operation DC2 may be performed based on changes in the results of the multiple first determining operations DC1.

[0050] The control unit 70 may be capable of simultaneously performing at least a part of the first operation OP1 for the plurality of semiconductor devices 10. The control unit 70 may be capable of simultaneously performing at least a part of the first elapsed operation OE1 for the plurality of semiconductor devices 10. The control unit 70 may be capable of simultaneously performing at least a part of the second operation OP2 for the plurality of semiconductor devices 10. This enables efficient testing.

[0051] Second Embodiment The second embodiment relates to an inspection system 310 (see FIG. 1). The inspection system 310 includes a control unit 70 that can be electrically connected to the semiconductor device 10, and a storage unit 72. In the inspection system 310, the control unit 70 can perform the above-described operations. According to the second embodiment, it is possible to provide an inspection system that can improve efficiency.

[0052] Third Embodiment The third embodiment relates to an inspection method. In the inspection method, at least a part of the operations described with reference to FIG. 2 are performed. The inspection method according to the third embodiment is an inspection method for inspecting a semiconductor device 10. As described with reference to FIG. 1, the semiconductor device 10 includes a semiconductor member 55, a transistor section 50, and a diode section 60. The transistor section 50 and the diode section 60 are provided in the semiconductor member 55. The transistor section 50 is provided in a part of the semiconductor member 55, and the diode section 60 is provided in another part of the semiconductor member 55. The transistor section 50 includes a source electrode 50S, a drain electrode 50D, and a gate electrode 50G. The diode section 60 includes a first end 61 and a second end 62. The first end 61 is electrically connected to the source electrode 50S. The second end 62 is electrically connected to the drain electrode 50D.

[0053] In the inspection method according to the third embodiment, a first operation OP1, a first transition operation OE1, a second operation OP2, and a first determination operation DC1 are performed (see FIG. 2). The first transition operation OE1 is performed after the first operation OP1. The second operation OP2 is performed after the first transition operation OE1.

[0054] 3A, in a first operation OP1, with the current source 74c electrically connected to the drain electrode 50D, the gate electrode 50G is set to the on potential Von, and a first detection value VD1 of the drain potential Vsd of the drain electrode 50D is detected. The current source 74c supplies a first current to the drain electrode 50D in a direction from the drain electrode 50D to the source electrode 50S.

[0055] As shown in FIG. 3A, in the first elapsed operation OE1, the gate electrode 50G is set to the off potential Voff in a state where the current source 74c is electrically connected to the drain electrode 50D.

[0056] 3A, in a second operation OP2, with the current source 74c electrically connected to the drain electrode 50D, the gate electrode 50G is set to an on potential Von, and a second detection value VD2 of the drain potential Vsd is detected. In a first determination operation DC1, the semiconductor device 10 is inspected based on the difference ΔV between the first detection value VD1 and the second detection value VD2. According to the embodiment, it is possible to provide an inspection system that can improve efficiency.

[0057] The configuration described in relation to the first or second embodiment may be applied to the third embodiment. For example, the first elapsed period TE1 of the first elapsed operation OE1 may be longer than the second period TP2 of the second operation OP2. For example, the first detection value VD1 may be detected at a first end time of the first period TP1 of the first operation OP1, and the second detection value VD2 may be detected at a second end time of the second period TP2 of the second operation OP2.

[0058] For example, the on-potential Von and the off-potential Voff may satisfy a first condition or a second condition. In the first condition, the on-potential Von is positive relative to the source potential of the source electrode 50S, and the off-potential Voff is negative relative to the source potential. In the second condition, the on-potential Von and the off-potential Voff are positive relative to the source potential. In the second condition, a first difference between the off-potential Voff and the source potential is smaller than a second difference between the on-potential Von and the source potential.

[0059] In the third embodiment, the semiconductor member 55 may also contain SiC. The diode section 60 may be, for example, a Schottky diode.

[0060] 4 is a flowchart illustrating a method for manufacturing a semiconductor device according to a fourth embodiment. As shown in FIG. 4, in the method for manufacturing a semiconductor device 10, the semiconductor device 10 is fabricated (step S110). The inspection method described in relation to the third embodiment is performed (step S120). This inspects the semiconductor device 10. In the fourth embodiment, the semiconductor member 55 included in the semiconductor device 10 contains SiC.

[0061] The embodiments may include the following technical solutions. (Technical Solution 1) A control unit capable of being electrically connected to a semiconductor device, wherein the semiconductor device includes a semiconductor member, a transistor unit, and a diode unit, wherein the transistor unit and the diode unit are provided on the semiconductor member, wherein the transistor unit includes a source electrode, a drain electrode, and a gate electrode, wherein the diode unit includes a first end and a second end, wherein the first end is electrically connected to the source electrode, and the second end is electrically connected to the drain electrode, wherein the control unit is capable of performing a first operation, a first transition operation, a second operation, and a first determination operation, wherein the first transition operation is performed after the first operation, and the second operation is performed after the first transition operation, wherein in the first operation, with a current source electrically connected to the drain electrode, the control unit sets the gate electrode to an ON potential and detects a first detection value of the drain potential of the drain electrode, and the current source is capable of supplying a first current to the drain electrode in a direction from the drain electrode to the source electrode, and wherein the control unit sets the gate electrode to an OFF potential in the first transition operation with the current source electrically connected to the drain electrode, In the second operation, the control unit sets the gate electrode to the on potential with the current source electrically connected to the drain electrode and detects a second detection value of the drain potential, and in the first determination operation, the control unit inspects the semiconductor device based on the difference between the first detection value and the second detection value.

[0062] (Technical Solution 2) The inspection device according to Technical Solution 1, wherein a first elapsed period of the first elapsed operation is longer than a second period of the second operation.

[0063] (Technical Solution 3) The inspection device according to Technical Solution 2, wherein the first period of the first operation is longer than the second period.

[0064] (Technical Solution 4) The inspection device according to Technical Solution 3, wherein the first elapsed period is shorter than the first period.

[0065] (Technical proposal 5) An inspection device described in Technical proposal 1, wherein the control unit is capable of detecting the first detection value at any time during a first period of the first operation, and the control unit is capable of detecting the second detection value at any time during a second period of the second operation.

[0066] (Technical proposal 6) An inspection device described in Technical proposal 1, wherein the control unit is capable of detecting the first detection value at a first end of a first period of the first operation, and the control unit is capable of detecting the second detection value at a second end of a second period of the second operation.

[0067] (Technical Solution 7) The inspection device according to any one of Technical Solutions 1 to 6, further comprising the current source.

[0068] (Technical proposal 8) An inspection device described in any one of Technical proposals 1 to 7, wherein the on potential and the off potential satisfy a first condition or a second condition, wherein in the first condition, the on potential is positive when taken as a reference to the source potential of the source electrode, and the off potential is negative when taken as a reference to the source potential, and in the second condition, the on potential and the off potential are positive when taken as a reference to the source potential, and a first difference between the off potential and the source potential is smaller than a second difference between the on potential and the source potential.

[0069] (Technical Solution 9) The inspection device according to any one of Technical Solutions 1 to 8, wherein the semiconductor member includes SiC.

[0070] (Technical Solution 10) An inspection device described in any one of Technical Solutions 1 to 9, wherein the control unit is capable of further performing another first transition operation after the second operation, and the control unit is capable of further performing another second operation after the another first transition operation.

[0071] (Technical proposal 11) An inspection device described in any one of Technical proposals 1 to 10, wherein the control unit is capable of simultaneously performing at least a portion of the first operation for multiple semiconductor devices, and the control unit is capable of simultaneously performing at least a portion of the first process operation for multiple semiconductor devices.

[0072] (Technical Solution 12) The inspection device according to any one of Technical Solutions 1 to 11, further comprising: a drain probe electrically connectable to the drain electrode; and a gate probe electrically connectable to the gate electrode.

[0073] (Technical proposal 13) A semiconductor device comprising: a control unit capable of being electrically connected to a semiconductor device; and a memory unit; wherein the semiconductor device includes a semiconductor member, a transistor unit, and a diode unit; wherein the transistor unit and the diode unit are provided on the semiconductor member; wherein the transistor unit includes a source electrode, a drain electrode, and a gate electrode; and wherein the diode unit includes a first end and a second end, wherein the first end is electrically connected to the source electrode and the second end is electrically connected to the drain electrode; wherein the control unit is capable of performing a first operation, a first elapsed operation, a second operation, and a first determination operation; wherein the first elapsed operation is performed after the first operation; and wherein the second operation is performed after the first elapsed operation; and wherein, in the first operation, the control unit, with a current source electrically connected to the drain electrode, sets the gate electrode to an on potential and detects a first detection value of the drain potential of the drain electrode; and wherein the current source is capable of supplying a first current to the drain electrode in a direction from the drain electrode to the source electrode; an inspection system in which, in the first transition operation, the control unit sets the gate electrode to an off potential while the current source is electrically connected to the drain electrode; in the second operation, the control unit sets the gate electrode to the on potential while the current source is electrically connected to the drain electrode, and detects a second detection value of the drain potential; and in the first determination operation, the control unit inspects the semiconductor device based on a difference between the first detection value and the second detection value.

[0074] (Technical Solution 14) An inspection method for inspecting a semiconductor device, wherein the semiconductor device includes a semiconductor member, a transistor portion, and a diode portion, the transistor portion and the diode portion being provided on the semiconductor member, the transistor portion including a source electrode, a drain electrode, and a gate electrode, the diode portion including a first end and a second end, the first end being electrically connected to the source electrode, and the second end being electrically connected to the drain electrode, the method comprising: performing a first operation, a first transition operation, a second operation, and a first determination operation, the first transition operation being performed after the first operation, and the second operation being performed after the first transition operation, in the first operation, with a current source electrically connected to the drain electrode, the gate electrode being set to an ON potential, and a first detection value of a drain potential of the drain electrode being detected, and the current source supplying a first current to the drain electrode in a direction from the drain electrode to the source electrode, and in the first transition operation, with the current source electrically connected to the drain electrode, the gate electrode being set to an OFF potential, In the second operation, with the current source electrically connected to the drain electrode, the gate electrode is set to the on potential and a second detection value of the drain potential is detected; and in the first determination operation, the semiconductor device is inspected based on a difference between the first detection value and the second detection value.

[0075] (Technical Solution 15) The inspection method according to Technical Solution 14, wherein a first elapsed period of the first elapsed action is longer than a second period of the second action.

[0076] (Technical proposal 16) An inspection method described in Technical proposal 14, in which the first detection value is detected at a first end of a first period of the first operation, and the second detection value is detected at a second end of a second period of the second operation.

[0077] (Technical proposal 17) An inspection method described in any one of Technical proposals 14 to 16, wherein the on potential and the off potential satisfy a first condition or a second condition, wherein in the first condition, the on potential is positive when taken as a reference to the source potential of the source electrode, and the off potential is negative when taken as a reference to the source potential, and in the second condition, the on potential and the off potential are positive when taken as a reference to the source potential, and a first difference between the off potential and the source potential is smaller than a second difference between the on potential and the source potential.

[0078] (Technical Scheme 18) The inspection method according to any one of Technical Schemes 14 to 17, wherein the semiconductor member contains SiC.

[0079] (Technical Solution 19) A method for manufacturing a semiconductor device, comprising: fabricating the semiconductor device; and carrying out the inspection method according to any one of Technical Solutions 14 to 17 to inspect the semiconductor device.

[0080] (Technical Solution 20) The method for manufacturing a semiconductor device according to Technical Solution 19, wherein the semiconductor member contains SiC.

[0081] According to the embodiments, it is possible to provide an inspection device, an inspection system, an inspection method, and a method for manufacturing a semiconductor device that can improve efficiency.

[0082] The embodiments of the present invention have been described above with reference to specific examples. However, the present invention is not limited to these specific examples. For example, the specific configurations of the components, such as the control unit and memory unit, included in the semi-inspection device or inspection system are within the scope of the present invention as long as a person skilled in the art can implement the present invention in a similar manner and obtain similar effects by appropriately selecting them from known ranges.

[0083] Furthermore, any combination of two or more elements of each specific example within the scope of technical feasibility is also included within the scope of the present invention as long as it includes the gist of the present invention.

[0084] In addition, all inspection devices, inspection systems, inspection methods, and semiconductor device manufacturing methods that can be implemented by a person skilled in the art by making appropriate design modifications based on the inspection device, inspection system, inspection method, and semiconductor device manufacturing method described above as embodiments of the present invention also fall within the scope of the present invention, as long as they include the gist of the present invention.

[0085] In addition, within the scope of the concept of the present invention, a person skilled in the art may come up with various modifications and alterations, and it will be understood that these modifications and alterations also fall within the scope of the present invention.

[0086] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be embodied in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, and are also included in the scope of the invention and its equivalents as defined in the claims.

[0087] 10: Semiconductor device, 50: Transistor section, 50D: Drain electrode, 50G: Gate electrode, 50S: Source electrode, 55: Semiconductor member, 60: Diode section, 61, 62: First and second terminals, 70: Control section, 71: Processing section, 72: Memory section, 73D: Detection circuit, 73P: Power supply, 73S: Switch section, 74c: Current source, 75D: Drain probe, 75G: Gate probe, 210: Inspection device, 310: Inspection system, DC1, DC2: First and second determination operations, OE1: First elapsed operation, OP1, OP2: First and second operations, TE1: First elapsed period, TP1, TP2: First and second periods, VD1, VD2: First and second detected values, VDE: First elapsed period potential, Vgs: gate voltage, Voff: off potential, Von: on potential, Vsd: drain potential, t1 to t3: first to third times

Claims

1. A control unit capable of being electrically connected to a semiconductor device, the semiconductor device including a semiconductor member, a transistor unit, and a diode unit, the transistor unit and the diode unit being provided on the semiconductor member, the transistor unit including a source electrode, a drain electrode, and a gate electrode, the diode unit including a first end and a second end, the first end being electrically connected to the source electrode, and the second end being electrically connected to the drain electrode, the control unit being capable of performing a first operation, a first transition operation, a second operation, and a first determination operation, the first transition operation being performed after the first operation, and the second operation being performed after the first transition operation, the control unit, in the first operation, turning on the gate electrode with a current source electrically connected to the drain electrode and detecting a first detection value of a drain potential of the drain electrode, the current source being capable of supplying a first current to the drain electrode in a direction from the drain electrode to the source electrode, the control unit, in the first transition operation, turning off the gate electrode with the current source electrically connected to the drain electrode, An inspection device, wherein in the second operation, the control unit sets the gate electrode to the on potential with the current source electrically connected to the drain electrode and detects a second detection value of the drain potential, and in the first determination operation, the control unit inspects the semiconductor device based on the difference between the first detection value and the second detection value.

2. The inspection device of claim 1, wherein a first elapsed time period of the first elapsed operation is longer than a second time period of the second operation.

3. The inspection apparatus of claim 2, wherein the first period of the first operation is longer than the second period.

4. The inspection device according to claim 1, wherein the semiconductor component comprises SiC.

5. An inspection device according to any one of claims 1 to 4, wherein the control unit is capable of further performing a different first process operation after the second operation, and the control unit is capable of further performing a different second operation after the different first process operation.

6. The inspection device according to claim 1, wherein the control unit is capable of simultaneously performing at least a portion of the first operation for a plurality of the semiconductor devices, and the control unit is capable of simultaneously performing at least a portion of the first process operation for the plurality of the semiconductor devices.

7. The inspection device according to claim 1, further comprising: a drain probe capable of being electrically connected to said drain electrode; and a gate probe capable of being electrically connected to said gate electrode.

8. A semiconductor device comprising: a control unit capable of being electrically connected to a semiconductor device; and a memory unit, wherein the semiconductor device includes a semiconductor member, a transistor unit, and a diode unit, wherein the transistor unit and the diode unit are provided on the semiconductor member, wherein the transistor unit includes a source electrode, a drain electrode, and a gate electrode, and the diode unit includes a first end and a second end, wherein the first end is electrically connected to the source electrode, and the second end is electrically connected to the drain electrode, the control unit is capable of performing a first operation, a first elapsed operation, a second operation, and a first determination operation, wherein the first elapsed operation is performed after the first operation, and the second operation is performed after the first elapsed operation, and in the first operation, the control unit sets the gate electrode to an on potential and detects a first detection value of a drain potential of the drain electrode with a current source electrically connected to the drain electrode, and the current source is capable of supplying a first current to the drain electrode in a direction from the drain electrode to the source electrode, an inspection system in which, in the first transition operation, the control unit sets the gate electrode to an off potential with the current source electrically connected to the drain electrode; in the second operation, the control unit sets the gate electrode to the on potential with the current source electrically connected to the drain electrode and detects a second detection value of the drain potential; and in the first determination operation, the control unit inspects the semiconductor device based on a difference between the first detection value and the second detection value.

9. An inspection method for inspecting a semiconductor device, the semiconductor device including a semiconductor member, a transistor portion and a diode portion, the transistor portion and the diode portion being provided on the semiconductor member, the transistor portion including a source electrode, a drain electrode and a gate electrode, the diode portion including a first end and a second end, the first end being electrically connected to the source electrode, and the second end being electrically connected to the drain electrode, the method comprising: performing a first operation, a first transition operation, a second operation and a first determination operation, the first transition operation being performed after the first operation, and the second operation being performed after the first transition operation, in the first operation, with a current source electrically connected to the drain electrode, the gate electrode is set to an on potential and a first detection value of a drain potential of the drain electrode is detected, and the current source supplies a first current to the drain electrode in a direction from the drain electrode to the source electrode, and in the first transition operation, with the current source electrically connected to the drain electrode, the gate electrode is set to an off potential, In the second operation, with the current source electrically connected to the drain electrode, the gate electrode is set to the on potential and a second detection value of the drain potential is detected; and in the first determination operation, the semiconductor device is inspected based on a difference between the first detection value and the second detection value.

10. A method for manufacturing a semiconductor device, comprising the steps of: fabricating the semiconductor device; and carrying out the inspection method according to claim 9 to inspect the semiconductor device.

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