Thin film deposition device and thin film deposition method

Abstract

The present application provides a thin film deposition device and a thin film deposition method. The thin film deposition device comprises: a heating unit, comprising a heating tray used for heating a substrate, and a supporting shaft used for supporting the heating tray; a rotating ring, used for bearing the substrate, the rotating ring being arranged around the heating tray; a power transmission unit, fixedly connected to the rotating ring; and a two-stage magnetic fluid, fixedly connected to the power transmission unit, wherein the power transmission unit and the two-stage magnetic fluid are movably installed on the supporting shaft; and when the power transmission unit and the two-stage magnetic fluid are driven, the rotating ring is driven to move, and the rotating ring drives the substrate to rotate and / or move up and down. According to the present application, multiple thin film depositions are implemented by means of independent movement of the substrate and the heating unit, thereby improving the uniformity of the thin film on the surface of the substrate.

Description

Thin film deposition device and thin film deposition method Technical Field

[0001] The present application relates to the field of semiconductor technology, and more particularly to a thin film deposition device and a thin film deposition method. Background Art

[0002] PECVD (plasma enhanced chemical vapor deposition) equipment is used to deposit various dielectric thin films on substrate surfaces. Film thickness uniformity is a key parameter in the thin-film deposition process, directly impacting film properties and yield. However, film thickness uniformity is affected by many factors, particularly uneven substrate heating, which is a significant factor influencing film thickness uniformity.

[0003] During the thin film deposition process, the substrate to be deposited is placed on a heating tray, which heats the substrate. However, due to the uneven temperature of the heating tray, the substrate is heated unevenly, and the thickness of the thin film deposited on the substrate surface is also uneven.

[0004] Therefore, it is necessary to provide a thin film deposition apparatus and a thin film deposition method that can make the film thickness uniform.

[0005] Summary of the Invention

[0006] In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a thin film deposition device and a thin film deposition method, which are used to solve the problem of poor uniformity of thin films deposited on substrates in the prior art.

[0007] To achieve the above-mentioned purpose and other related purposes, the present application provides a thin film deposition device, comprising: a heating unit, comprising a heating tray for heating a substrate and a support shaft supporting the heating tray; a rotating ring, for supporting the substrate, the rotating ring being arranged around the heating tray; a power transmission unit, fixedly connected to the rotating ring; a two-stage magnetic fluid, fixedly connected to the power transmission unit; wherein the power transmission unit and the two-stage magnetic fluid are movably mounted on the support shaft; when the power transmission unit and the two-stage magnetic fluid are driven, they drive the rotating ring to move, and drive the substrate to rotate and / or lift through the rotating ring.

[0008] Optionally, the two-stage magnetic fluid includes a middle ring, and the middle ring is fixedly connected to the power transmission unit.

[0009] Optionally, the inner diameter of the rotating ring is smaller than the outer diameter of the substrate.

[0010] Optionally, there is a gap between the rotating ring and the heating tray in the horizontal direction.

[0011] Optionally, it also includes a first bearing part and a third bearing part, the support shaft is fixed to the first bearing part and passes through the third bearing part, when the first bearing part moves relative to the third bearing part along the extension direction of the support shaft, the first bearing part drives the support shaft to move, and drives the heating tray to rise and fall through the support shaft.

[0012] Optionally, the two-stage magnetic fluid and the force transmission unit are coupled to the first bearing part, and the first bearing part drives the rotating ring to rise and fall through the two-stage magnetic fluid and the force transmission unit.

[0013] Optionally, it also includes a second bearing part located between the first bearing part and the third bearing part, and the support shaft also passes through the second bearing part, the two-stage magnetic fluid, and the force transmission unit. The two-stage magnetic fluid is fixedly connected to the second bearing part. When the second bearing part moves relative to the first bearing part, the second bearing part drives the two-stage magnetic fluid and the power transmission unit to move up and down along the support shaft.

[0014] Optionally, a first bellows is provided between the two-stage magnetic fluid and the third bearing portion, and a second bellows is provided between the first bearing portion and the second bearing portion.

[0015] To achieve the above-mentioned and other related purposes, the present invention further provides a thin film deposition method, comprising the following steps:

[0016] S1: Position the substrate at the end of the substrate supporting unit;

[0017] S2: driving the heating tray and the rotating ring to rise, so that the heating tray and the rotating ring are in contact with the substrate;

[0018] S3: depositing a thin film of a certain thickness on the substrate surface;

[0019] S4: After the thin film deposition is completed in step S3, the rotating ring is driven to rise, so that the rotating ring lifts the substrate until it is separated from the heating unit;

[0020] S5: driving the rotating ring to rotate, and driving the substrate to rotate from the first position to the second position;

[0021] S6: driving the rotating ring to descend until the heating unit contacts the substrate again and then performing the next thin film deposition.

[0022] As described above, according to the thin film deposition device and thin film deposition method of the present invention, the rotating ring lifts the substrate and performs lifting motion to separate the substrate from the heating unit. When the heating unit remains stationary, the rotating ring rotates the substrate by a certain angle, and the rotating ring again lifts the substrate until the heating unit contacts the substrate. Multiple thin film depositions are achieved through the independent movement of the rotating ring and the heating unit, thereby improving the uniformity of the thin film on the substrate surface.

[0023] Summary of the Figures

[0024] The features and performance of the present application are further described by the following examples and drawings.

[0025] FIG1 is a schematic structural diagram of a thin film deposition device according to an embodiment of the present invention.

[0026] FIG2 is a cross-sectional view of a thin film deposition apparatus according to an embodiment of the present invention.

[0027] FIG3 is a schematic diagram of a partial structure of a thin film deposition device according to an embodiment of the present invention.

[0028] FIG. 4 is a side view of the thin film deposition apparatus in FIG. 3 .

[0029] Preferred embodiment of this application

[0030] The following describes the embodiments of the present invention through specific examples. Those skilled in the art will readily understand the other advantages and benefits of the present invention from the disclosure herein. The present invention may also be implemented or applied through various other specific embodiments, and the details in this specification may be modified or altered based on different viewpoints and applications without departing from the spirit of the present invention.

[0031] For example, when describing the embodiments of the present invention, cross-sectional views of device structures may be partially enlarged to scale for ease of explanation. Furthermore, these schematic views are merely illustrative and should not limit the scope of the present invention. Furthermore, in actual manufacturing, three-dimensional dimensions, including length, width, and depth, should be included.

[0032] For ease of description, spatially relative terms such as "under," "below," "below," "below," "above," and "on" may be used herein to describe the relationship of one element or feature to other elements or features shown in the drawings. It will be understood that these spatially relative terms are intended to encompass orientations of the device in use or operation in addition to the orientation depicted in the drawings. Additionally, when a layer is referred to as being "between" two layers, it can be the only layer between the two layers, or one or more intervening layers may be present. As used herein, "between" is inclusive of both endpoints.

[0033] In the context of the present application, a structure described as a first feature being "above" a second feature may include embodiments where the first and second features are formed in direct contact, and may also include embodiments where an additional feature is formed between the first and second features, such that the first and second features may not be in direct contact.

[0034] It should be noted that the illustrations provided in this embodiment are only used to schematically illustrate the basic concept of the present invention. Therefore, the illustrations only show components related to the present invention and are not drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component can be changed at will, and the component layout type may also be more complicated.

[0035] As shown in Figures 1 to 4, this embodiment provides a thin film deposition apparatus, comprising a heating unit 100, a rotating unit 200, a substrate support unit 300, a power transmission unit 400, a two-stage magnetic fluid 500, a bellows 600, a carrier 700, and a power unit 800. The two-stage magnetic fluid 500 is coupled to the rotating unit 200 via the power transmission unit 400, driving the rotating unit 200 to rotate and lift, and the power unit 800 drives the rotating unit 200 and / or the heating unit 100 to lift.

[0036] As shown in Figure 2, the heating unit 100 includes a heating tray 110 and a support shaft 120 for supporting the heating tray 110. During the substrate processing process, the heating tray 110 is attached to the substrate W and heats the substrate W. The support shaft 120 extends downward from the heating tray 110 to form and stably support the heating tray 110.

[0037] The rotating unit 200 includes a rotating ring 210 arranged around the heating tray 110, a motor 220 that drives the rotating ring 210 to rotate, and a rotating ring support 230 that supports the rotating ring 210. As shown in Figures 1 and 2, the inner diameter of the rotating ring 210 is smaller than the outer diameter of the substrate W. Therefore, when the rotating ring 210 is in contact with the substrate W, the rotating ring 210 can be used to support the substrate W. When the rotating ring 210 is raised or lowered or rotated, the rotating ring 210 can carry the substrate W for raising and lowering motion and rotating motion. In order to facilitate the raising and lowering motion of the rotating ring 210, a gap is left in the horizontal direction between the rotating ring 210 and the heating tray 110, that is, the inner diameter of the rotating ring 210 is larger than the outer diameter of the heating tray 110, and the gap range is less than 5mm.

[0038] The motor 220 is coupled to the rotating ring 210 via the two-stage magnetic fluid 500 and the power transmission unit 400, and is used to drive the rotating ring 210 to rotate. Specifically, the middle ring 520 of the two-stage magnetic fluid 500 is fixedly connected to the power transmission unit 400 via a flange (not shown), and one end of the rotating ring support 230 is connected to the rotating ring 210, and the other end is fixedly connected to the power transmission unit 400. Therefore, when the motor 220 drives the middle ring 520 of the two-stage magnetic fluid 500 to rotate, the middle ring 520 drives the rotating ring 210 to rotate synchronously through the power transmission unit 400 and the rotating ring support 230. The motor 220 is preferably a direct drive motor that directly drives the middle ring 520 to rotate. It does not require a reduction structure or a belt transmission structure, and the structure is simpler, which greatly saves space. The two-stage magnetic fluid 500 further includes an outer ring 510, an inner ring 530, an inner magnetic fluid (not labeled) located between the inner ring 530 and the middle ring 520, and an outer magnetic fluid (not labeled) located between the outer ring 510 and the middle ring 520. In the embodiment shown in FIG1 , the motor 220 is disposed between the inner ring 530 and the outer ring 510 of the two-stage magnetic fluid 500. Specifically, the rotor of the motor 220 is connected to the middle ring 520, and the stator of the motor 220 is connected to the inner wall of the outer ring 510. The two-stage magnetic fluid 500 is sleeved on the lower outer side of the support shaft 120, and the power transfer unit 400 is sleeved on the upper outer side of the support shaft 120. The two-stage magnetic fluid 500 and the power transfer unit 400 are fixedly connected, so that the middle ring 520 of the two-stage magnetic fluid 500 and the power transfer unit 400 rotate synchronously about the central axis of the support shaft, and the two-stage magnetic fluid 500 and the power transfer unit 400 synchronously move up and down along the support shaft. Here, the use of a dual-stage magnetic fluid 500 not only ensures a sealed vacuum within the support shaft 120 during thin film deposition, but also couples to the rotating unit 200 to enable rotational and elevating motion of the rotating unit 200. Furthermore, driven by the motor 220, the rotating unit 200 rotates with the substrate W. Because the power transmission unit 400 is fixedly connected to the rotating ring 210 via the rotating ring support 230, the rotating ring 210 rotates synchronously with the substrate W while the heating unit 100 remains stationary, and the relative position between the heating unit 100 and the substrate W changes.

[0039] The substrate support unit 300 includes substrate support rods 310 for supporting substrates W and substrate support portions 320 fixedly connected to the substrate support rods 310. The substrate support portion 320 is sleeved on the outside of the power transmission unit 400 and provides stable support for the substrate W. When the power transmission unit 400 moves up and down or rotates, the position of the substrate support unit 300 remains unchanged. The substrate support rods 310 pass through the heating tray 110 and support the substrate W at their ends.

[0040] As shown in Figures 3 and 4, the support portion 700 includes a first support portion 710, a second support portion 720, and a third support portion 730. The first support portion 710, the second support portion 720, and the third support portion 730 are distributed at different positions along the support shaft 120 from low to high. A second bellows 620 is disposed between the first support portion 710 and the second support portion 720. Because the ends of the second bellows 620 are fixedly connected to the first support portion 710 and the second support portion 720, when the first support portion 710 moves relative to the second support portion 720 along the support shaft 120, the second bellows 620 can expand and contract accordingly. The two-stage magnetic fluid 500 and the first bellows 610 are connected between the second support portion 720 and the third support portion 730. The first bellows 610 is fixedly connected at its ends to the bottom of the third support portion 730 and the top of the two-stage magnetic fluid 500, respectively. Therefore, when the first support portion 710 moves relative to the second support portion 720 along the extension direction of the support shaft 120, the first bellows 610 can extend or compress, and the second bellows 620 can compress or extend. Referring to FIG. 2 , because the bottom of the two-stage magnetic fluid 500 is fixedly connected to the second support portion 720, the two-stage magnetic fluid 500 is driven by the second support portion 720 to move up and down along the support shaft 120. Referring to FIG. 2 , one end of the support shaft 120 is fixed to the first support portion 710 and passes through the second support portion 720, the two-stage magnetic fluid 500, and the power transmission unit 400, sequentially from bottom to top. The other end is connected to the bottom of the heating tray 110. It should be noted that the position of the third support portion 730 is fixed. When the first support portion 710 moves relative to the third support portion 730 along the extension direction of the support shaft 120, the support shaft 120, along with the two-stage magnetic fluid 500, the power transmission unit 400, the heating plate 110, and the rotating unit 200, moves upward and downward. The relative movement between the first support portion 710 and the third support portion 730 is driven by the first power unit 810, while the relative movement between the first support portion 710 and the second support portion 720 is driven by the second power unit 820. Both the first power unit 810 and the second power unit 820 of the power unit 800 can be electric or pneumatic cylinders. For example, when the first power unit 810 extends, it drives the first support portion 710 downward, and when the first power unit 810 retracts, it drives the first support portion 710 upward. When the second power unit 820 extends, it drives the second support portion 720 upward, and when the second power unit 820 retracts, it drives the second support portion 720 downward. There are two or three first power units 810, evenly distributed between the first load-bearing portion 710 and the third load-bearing portion 730. Preferably, there are three first power units 810, so that the first load-bearing portion 710 and the third load-bearing portion 730 are evenly distributed. There are two or three second power units 820, evenly distributed between the first load-bearing portion 710 and the second load-bearing portion 720.Preferably, three second power parts 820 are selected so that the first bearing part 710 and the second bearing part 720 are evenly stressed.

[0041] The first power unit 810 and the second power unit 820 respectively drive the first and second support members 710 and 720 to move along the direction of the support shaft 120, thereby driving the rotation unit 200 to move upward and downward. When the first power unit 810 drives the first support member 710 relative to the third support member 730 along the direction of the support shaft 120, it causes the second support member 720, the heating unit 100, the two-stage magnetic fluid 500, the rotation unit 200, the power transmission unit 400, and the rotation unit 200 to move upward and downward. When the second power unit 820 drives the second support member 720 relative to the first support member 710 along the direction of the support shaft 120, it causes the two-stage magnetic fluid 500, the power transmission unit 400, and the rotation unit 200 to move relative to the support shaft 120. Simultaneously, the substrate W is lifted and lowered synchronously by the rotation unit 200, while the heating unit 100, which is fixedly connected to the support shaft 120, remains stationary.

[0042] The first power unit 810 can drive the relative movement between the first carrier 710 and the third carrier 730. Since the bottom of the support shaft 120 is fixedly connected to the first carrier 710 and extends through the third carrier 730, the support shaft 120 can move synchronously with the first carrier 710 relative to the third carrier 730, and the heating unit 100 fixedly connected to the support shaft 120 can also move synchronously. Here, the first carrier 710 and the second carrier 720 are coupled via the second power unit 820. The first carrier 710 can drive the second carrier 720 to move synchronously, and the two-stage magnetic fluid 500 and the rotating unit 200 fixedly connected to the second carrier 720 also move synchronously. Therefore, when the first carrier 710 moves relative to the third carrier 730 under the drive of the first power unit 810, the heating unit 100 and the rotating unit 200 move synchronously toward the substrate W.

[0043] The second power unit 820 drives the relative movement between the second support portion 720 and the first support portion 710. Because the support shaft 120 passes through the second support portion 720, the second support portion 720 is movable relative to the support shaft 120. Here, the bottom of the bipolar magnetic fluid 500 is fixedly connected to the second support portion 720, and the top of the bipolar magnetic fluid 500 is connected to the power transmission unit 400, which is coupled to the rotation unit 200. As a result, when the second support portion 720 moves up and down relative to the first support portion 710 along the extension direction of the support shaft, the rotation unit 200, which holds the substrate W, also moves up and down synchronously, while the heating unit 100, which is fixedly connected to the support shaft 120, remains stationary.

[0044] The thin film deposition method using the thin film deposition device of the present invention comprises the following steps:

[0045] S1: Position the substrate at the end of the substrate supporting unit;

[0046] S2: driving the heating tray and the rotating ring to rise, so that the heating tray and the rotating ring are in contact with the substrate;

[0047] In step S2, the first power unit 810 can drive the first carrier 710 to move upward. Since the bottom of the support shaft 120 is fixedly connected to the first carrier 710 and extends through the third carrier 730, the support shaft 120 can move upward synchronously with the first carrier 710 relative to the third carrier 730, and drive the heating unit 100, which is fixedly connected to the support shaft 120, to move upward synchronously. Here, the first carrier 710 and the second carrier 720 are coupled via the second power unit 820. The first carrier 710 can drive the second carrier 720 to move upward synchronously, and the two-stage magnetic fluid 500 and the rotating unit 200, which are fixedly connected to the second carrier 720, also move upward synchronously. Therefore, when the first carrier 710 moves upward relative to the third carrier 730 under the drive of the first power unit 810, the heating unit 100 and the rotating unit 200 move synchronously toward the substrate W.

[0048] S3: depositing a thin film of a certain thickness on the substrate surface;

[0049] In step S3 , conventional methods in the art may be used to perform thin film deposition, and this application does not impose any limitation thereto.

[0050] S4: After the thin film deposition is completed in step S3, the rotating ring 210 is driven to rise, so that the rotating ring 210 lifts the substrate W and separates it from the heating unit 100;

[0051] In step S4, the second power unit 820 drives the relative movement between the second carrier 720 and the first carrier 710. Since the support shaft 120 passes through the second carrier 720, the second carrier 720 is movable relative to the support shaft 120. Here, the bottom of the two-stage magnetic fluid 500 is fixedly connected to the second carrier 720, and the top of the two-stage magnetic fluid 500 is connected to the power transmission unit 400, which is coupled to the rotation unit 200. As a result, when the second carrier 720 moves upward relative to the first carrier 710 along the extension direction of the support shaft, the rotation unit 200 also moves upward synchronously with the substrate W. At this time, the position of the first carrier 710 remains unchanged, the height of the support shaft 120 remains unchanged, and the heating unit 100, which is fixedly connected to the support shaft 120, remains stationary.

[0052] S5: driving the rotating ring 210 to rotate, and driving the substrate W to rotate from the first position to the second position;

[0053] In step S5, the motor 220 drives the rotating ring 210 to rotate. It can be understood that the second position is different from the first position.

[0054] S6: driving the rotating ring 210 down until the heating unit 100 contacts the substrate W again and then performing the next thin film deposition.

[0055] In step S6, the second power unit 820 drives the second carrier 720 to descend relative to the first carrier 710 along the direction in which the support shaft extends. The rotary unit 200 also descends synchronously to a position where the substrate W contacts the heating unit 100. During the descent of the rotary ring 210, the position of the first carrier 710 remains fixed, and thus the position of the heating unit 100 also remains fixed.

[0056] During the thin film deposition process, the process gas is dissociated into plasma gas, and the dissociated plasma gas is used to deposit the thin film on the surface of the heated substrate W.

[0057] According to the thin film deposition apparatus and method of the present invention, a dual-stage magnetic fluid 500 is coupled to a rotating unit 200, enabling the rotating unit 200 to lift and lower the substrate W, separating the substrate W from the heating unit 100. After the rotating unit 200 rotates the substrate W, the contact position between the substrate W and the heating unit 100 is adjusted, and the substrate W is then brought into contact with the heating unit 100 for heating. This allows for more uniform heating of the substrate W, overcoming the issue of uneven temperature on the heating tray. During multiple thin film deposition processes, the independent movement of the substrate W and the heating unit 100, as well as the repeated adjustments to the position of the substrate W, improves the uniformity of the thin film on the substrate W surface.

[0058] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Anyone skilled in the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by one of ordinary skill in the art without departing from the spirit and technical principles disclosed herein are intended to be covered by the claims of the present invention.

Claims

1. A thin film deposition device, characterized in that: include: A heating unit, comprising a heating tray for heating the substrate and a support shaft for supporting the heating tray; A rotating ring, used for supporting the substrate, wherein the rotating ring is arranged around the heating tray; A power transmission unit, fixedly connected to the rotating ring; A two-stage magnetic fluid fixedly connected to the power transmission unit; Wherein, the power transmission unit and the two-stage magnetic fluid can be movably installed on the support shaft; when the power transmission unit and the two-stage magnetic fluid are driven, the rotating ring is driven to move, and the substrate is driven to rotate and / or lift through the rotating ring.

2. The thin film deposition device according to claim 1, characterized in that: The two-stage magnetic fluid comprises a middle ring, and the middle ring is fixedly connected to the power transmission unit.

3. The thin film deposition device according to claim 1, characterized in that: An inner diameter of the rotating ring is smaller than an outer diameter of the substrate.

4. The thin film deposition device according to claim 1, characterized in that: There is a gap between the rotating ring and the heating tray in a horizontal direction.

5. The thin film deposition device according to claim 1, characterized in that: It also includes a first bearing part and a third bearing part. The support shaft is fixed to the first bearing part and passes through the third bearing part. When the first bearing part moves relative to the third bearing part along the extension direction of the support shaft, the first bearing part drives the support shaft to move, and drives the heating tray to rise and fall through the support shaft.

6. The thin film deposition device according to claim 5, characterized in that: The two-stage magnetic fluid and the force transmission unit are coupled to the first bearing part, and the first bearing part drives the rotating ring to rise and fall through the two-stage magnetic fluid and the force transmission unit.

7. The thin film deposition device according to claim 5 or 6, characterized in that: It also includes a second bearing part located between the first bearing part and the third bearing part, the support shaft also passes through the second bearing part, the two-stage magnetic fluid, and the force transmission unit, the two-stage magnetic fluid is fixedly connected to the second bearing part, and when the second bearing part moves relative to the first bearing part, the second bearing part drives the two-stage magnetic fluid and the power transmission unit to move up and down along the support shaft.

8. The thin film deposition device according to claim 7, characterized in that: A first bellows is arranged between the double-stage magnetic fluid and the third bearing part, and a second bellows is arranged between the first bearing part and the second bearing part.

9. A thin film deposition method, characterized in that: The following steps are involved: S1: Position the substrate at the end of the substrate supporting unit; S2: driving the heating tray and the rotating ring to rise, so that the heating tray and the rotating ring are in contact with the substrate together; S3: depositing a film of a certain thickness on the substrate surface; S4: After the thin film deposition in step S3 is completed, the rotating ring is driven to rise, so that the rotating ring lifts the substrate until it is separated from the heating unit; S5: driving the rotating ring to rotate, and driving the substrate to rotate from the first position to the second position; S6: driving the rotating ring to descend until the heating unit contacts the substrate again to perform the next thin film deposition.

Images