Self-assembled material, solar cell, and electric device

Abstract

The present application discloses a self-assembled material, a solar cell, and an electric device. The solar cell comprises a light absorption layer and a passivation layer located on one side of the light absorption layer, wherein the passivation layer comprises a self-assembled material. Alternatively, the solar cell comprises a light absorption layer and a hole transport layer located on one side of the light absorption layer, wherein the hole transport layer comprises a self-assembled material. The self-assembled material comprises a first self-assembled molecular material, and the structural formula of the first self-assembled molecular material is formula (I). Ar represents an aryl group, Ar comprises at least one coordination atom, the coordination atom comprises unbonded lone pair electrons, and the coordination atom comprises one or more of a phosphorus atom, an arsenic atom, a sulfur atom, and a selenium atom. L comprises one or more of a carbon-containing group, a nitrogen-containing group, an oxygen-containing group, a silicon-containing group, a phosphorus-containing group, and a sulfur-containing group. The value of n ranges from 0 to 10. A comprises a hydrophilic group. The self-assembled material is used to perform passivation on the light absorption layer of the solar cell, so that a good passivation effect can be achieved.

Description

Self-assembly materials, solar cells and electrical devices Technical Field

[0001] The present application relates to the field of new energy technology, in particular to self-assembly materials, solar cells and electrical equipment. Background Art

[0002] With the rapid development of new energy technologies, solar cells have been widely used in military, aerospace, industry, commerce, agriculture, and communications. Perovskite solar cells have gradually become a hot topic in next-generation solar cell research due to their high photoelectric conversion efficiency, simple manufacturing process, and low production and material costs.

[0003] The numerous defects at the perovskite interface affect the photoelectric conversion efficiency and stability of perovskite solar cells. To improve the photoelectric conversion efficiency and stability of perovskite solar cells, self-assembling materials can be used to passivate the perovskite interface. However, existing self-assembling materials have limited effectiveness in passivating perovskite interfaces.

[0004] Summary of the Invention

[0005] The main technical problem solved by this application is to provide a self-assembly material, solar cell and electrical equipment to improve the passivation effect of perovskite, thereby improving the photoelectric conversion efficiency and stability of solar cells.

[0006] In order to solve the above technical problems, a technical solution adopted in the present application is: providing a solar cell, the solar cell comprising a light absorbing layer and a passivation layer located on one side of the light absorbing layer, the passivation layer comprising a self-assembly material; or, the solar cell comprising a light absorbing layer and a hole transport layer located on one side of the light absorbing layer, the hole transport layer comprising a self-assembly material; wherein the self-assembly material comprises a first self-assembly molecular material, the structural formula of the first self-assembly molecular material is Wherein, Ar represents an aromatic group, Ar includes at least one coordinating atom, the coordinating atom contains an unbonded lone pair of electrons, and the coordinating atom includes one or more of a phosphorus atom, an arsenic atom, a sulfur atom, and a selenium atom; L includes one or more of a carbon-containing group, a nitrogen-containing group, an oxygen-containing group, a silicon-containing group, a phosphorus-containing group, and a sulfur-containing group, and the value of n is 0-10; A includes a hydrophilic group.

[0007] The Ar group of the first self-assembled molecular material is used to contact the light absorption layer of the solar cell to passivate and improve the surface defects of the light absorption layer. By introducing one of phosphorus atoms, arsenic atoms, sulfur atoms, and selenium atoms as a coordination atom in the Ar group, the atomic radius of the coordination atom is larger, and the unbonded lone pair electrons in the coordination atom can combine with the low-coordinated lead vacancies in the light absorption layer to form a strong coordination bond, thereby achieving passivation of the low-coordinated lead in the light absorption layer and reducing defects on the interface of the light absorption layer, so that the solar cell has higher photoelectric conversion efficiency and better stability.

[0008] In one embodiment, Ar includes two or more coordination atoms, which can provide more coordination sites to passivate more interface defects and enhance the passivation effect of the first self-assembled molecular material on perovskite.

[0009] In one embodiment, Ar is any one of the following Ar1 to Ar12:

[0010] wherein X1 to X5 are selected from any one of -CR"2-, -NR"-, -O-, -SiR"2-, -PR"-, -S-, -As-, -Se-, -C(=O)-, -C(=S)-, -C(=NR")-, and -C(=CR"2)-, and m is 1-3; R1 to R 143 and R" are independently selected from any one of hydrogen, halogen, -OR', -OCOR', -NHCOR', -NR'2, R', halogen-substituted R', -SR', -PR'2, -AsR'2, and -Se-; R' is any one of substituted or unsubstituted phenyl, thienyl, and C1-C5 alkyl.

[0011] By making Ar any one of Ar1 to Ar12, the selection diversity of the first self-assembly molecular material is increased, and the affinity of the first self-assembly molecular material to the light absorbing material precursor solution can be enhanced. At the same time, it is conducive to uniform coating over a large area and improves preparation efficiency.

[0012] In one embodiment, when Ar is Ar1, at least one of R1 to R8 is selected from -PR'2, -SR', -AsR'2, -Se-; and / or,

[0013] In the case where Ar is Ar2, R9 to R 18 At least one of them is selected from -PR'2, -SR', -AsR'2, -Se-; and / or,

[0014] When Ar is Ar3, R 19 to R 30At least one of them is selected from -PR'2, -SR', -AsR'2, -Se-; and / or,

[0015] When Ar is Ar4, R 31 to R 44 At least one of them is selected from -PR'2, -SR', -AsR'2, -Se-; and / or,

[0016] When Ar is Ar5, R 45 to R 60 At least one of them is selected from -PR'2, -SR', -AsR'2, -Se-; and / or,

[0017] When Ar is Ar6, R 61 to R 78 At least one of them is selected from -PR'2, -SR', -AsR'2, -Se-; and / or,

[0018] When Ar is Ar10 and X1 does not contain phosphorus, sulfur, arsenic, or selenium, R 127 to R 134 At least one of them is selected from -PR'2, -SR', -AsR'2, -Se-; and / or,

[0019] When Ar is Ar11 and X2 to X3 do not contain phosphorus, sulfur, arsenic, or selenium, R 135 to R 138 At least one of them is selected from -PR'2, -SR', -AsR'2, -Se-; and / or,

[0020] When Ar is Ar12 and X4 to X5 do not contain phosphorus, sulfur, arsenic, or selenium, R 139 to R 143 At least one of them is selected from -PR'2, -SR', -AsR'2, and -Se-.

[0021] By selecting the groups in Ar1 to Ar12 as described above, Ar includes at least one phosphorus atom coordination atom, one sulfur atom coordination atom, one arsenic atom coordination atom, or one selenium atom coordination atom, thereby improving the passivation ability of the light absorption layer compared with the prior art.

[0022] In one embodiment, when Ar is Ar1, at least two of R1 to R8 are selected from one of -PR'2, -SR', -AsR'2, and -Se-; and / or,

[0023] In the case where Ar is Ar2, R9 to R 18At least two of them are selected from one of -PR'2, -SR', -AsR'2, and -Se-; and / or,

[0024] When Ar is Ar3, R 19 to R 30 At least two of them are selected from one of -PR'2, -SR', -AsR'2, and -Se-; and / or,

[0025] When Ar is Ar4, R 31 to R 44 At least two of them are selected from one of -PR'2, -SR', -AsR'2, and -Se-; and / or,

[0026] When Ar is Ar5, R 45 to R 60 At least two of them are selected from one of -PR'2, -SR', -AsR'2, and -Se-; and / or,

[0027] When Ar is Ar6, R 61 to R 78 At least two of them are selected from one of -PR'2, -SR', -AsR'2, and -Se-; and / or,

[0028] When Ar is Ar7, R 79 to R 92 At least one of -PR'2, -SR', -AsR'2, -Se-; and / or

[0029] In the case where Ar is Ar8, R 93 to R 108 At least one of -PR'2, -SR', -AsR'2, -Se-; and / or

[0030] In the case where Ar is Ar9, R 109 to R 126 At least one of -PR'2, -SR', -AsR'2, -Se-; and / or

[0031] When Ar is Ar10 and X1 does not contain phosphorus, sulfur, arsenic, or selenium, R 127 to R 134 At least two of them are selected from -PR'2, -SR', -AsR'2, -Se-; or when Ar is Ar10 and X1 contains one of phosphorus, sulfur, arsenic, and selenium groups, R 127 to R 134At least one of -PR'2, -SR', -AsR'2, -Se-; and / or

[0032] When Ar is Ar11 and X2 to X3 do not contain phosphorus, sulfur, arsenic, or selenium, R 135 to R 138 At least two of them are selected from -PR'2, -SR', -AsR'2, -Se-; or when Ar is Ar11 and X2 to X3 contain one of phosphorus, sulfur, arsenic, and selenium groups, R 135 to R 138 At least one of -PR'2, -SR', -AsR'2, -Se-; and / or

[0033] When Ar is Ar12 and X4 to X5 do not contain phosphorus, sulfur, arsenic, or selenium, R 139 to R 143 At least two of them are selected from -PR'2, -SR', -AsR'2, -Se-; or when Ar is Ar12 and X4 to X5 contain one of phosphorus, sulfur, arsenic, and selenium groups, R 139 to R 143 At least one of them is selected from one of -PR'2, -SR', -AsR'2, and -Se-.

[0034] By making the above selection of the groups in Ar1 to Ar12, Ar includes at least two coordinating atoms selected from phosphorus atoms, sulfur atoms, selenium atoms, and arsenic atoms, which can provide more coordination sites to passivate more interface defects in the light absorption layer and enhance the passivation effect of the first self-assembled molecular material on perovskite.

[0035] In one embodiment, the hydrophilic group includes one or more oxyacid groups, which are anchored to the film layer on the side of the light-absorbing layer away from the second electrode to achieve self-assembly. Using oxyacid groups as anchoring groups can reduce the difficulty of the synthesis process. The oxyacid groups can be orderly arranged into a self-assembled molecular film on the conductive glass substrate; or they can contact the metal oxide hole transport layer and orderly arrange themselves into a self-assembled molecular film on the metal oxide hole transport layer, while hindering the contact between the metal ions of the metal oxide hole transport layer and the perovskite, thereby reducing the degradation of the perovskite material.

[0036] In one embodiment, the oxyacid groups include -COOH, salts corresponding to -COOH, -PO(OH)2, salts corresponding to -PO(OH)2, -PHO(OH), salts corresponding to -PHO(OH), -SO2(OH), salts corresponding to -SO2(OH), -B(OH) 2、By making the oxyacid group any of the above salts, the selection diversity of the first self-assembling molecular material is increased, and the affinity of the anchoring group to the film layer on the side of the light absorbing layer away from the second electrode can be improved, thereby enhancing the anchoring strength.

[0037] In one embodiment, L is -CR"2-, -NR"-, -O-, -SiR"2-, -PR"-, -S-, -C(=O)-, -C(=S)-, -C(=NR")-, -C(=CR"2)-, and any one of the following L1 to L8;

[0038] Among them, Z1 to Z 40 are independently selected from any one of =CR”-, =N-; X6 to X 11 Respectively selected from any one of -CR"2-, -NR"-, -O-, -SiR"2-, -PR"-, -S-, -As-, -Se-, -C(=O)-, -C(=S)-, -C(=NR")-, -C(=CR"2)-; R" is selected from any one of hydrogen, halogen, -OR', -OCOR', -NHCOR', -NR'2, R', halogen-substituted R', -SR', -PR'2, -AsR'2, -Se-; R' is any one of substituted or unsubstituted phenyl, thienyl, and C1-C5 alkyl. By making the L group any of the above, the selection diversity of the first self-assembled molecular material is increased. When L includes any one of a phosphorus atom, a sulfur atom, an arsenic atom, and a selenium atom, more coordination sites can be provided to passivate more interface defects of the light absorption layer, thereby enhancing the passivation effect of the first self-assembled molecular material on the perovskite.

[0039] In one embodiment, the first self-assembling molecular material is selected from any one of SAM1 to SAM17:

[0040] SAM1 to SAM17 include at least one coordinating atom selected from the group consisting of phosphorus, sulfur, arsenic, and selenium, and also include nitrogen or oxygen atoms that can coordinate with the lead in the perovskite. Compared to prior art self-assembled molecules that passivate the perovskite lead by binding with nitrogen or oxygen atoms, and the stronger binding strength between phosphorus, sulfur, arsenic, and selenium atoms and the perovskite lead than between nitrogen and oxygen atoms, using any of SAM1 to SAM17 can enhance the passivation effect on the perovskite, thereby improving the photoelectric conversion efficiency and stability of the solar cell.

[0041] In one embodiment, a second self-assembling molecular material is further included, comprising at least one of oxygen atoms and nitrogen atoms containing unbonded lone pairs of electrons. Passivating the light-absorbing layer using a self-assembling material formed by mixing the first and second self-assembling molecular materials can achieve a superior passivation effect, thereby improving the photovoltaic conversion efficiency and stability of the solar cell. This allows the perovskite cell to have a higher open-circuit voltage, short-circuit current density, and fill factor, resulting in higher photovoltaic conversion efficiency and improved stability.

[0042] In one embodiment, the second self-assembling molecular material is selected from any one of the following compounds M1 to M4:

[0043] In one embodiment, the hole transport layer further comprises a metal oxide; optionally, the self-assembling material is attached to the surface of the metal oxide. Specifically, the hole transport layer comprises a mixture of the self-assembling material and the metal oxide. The self-assembling material can not only passivate interfacial defects in the light absorbing layer but also reduce the ingress of metal ions into the light absorbing layer, thereby reducing degradation of the light absorbing layer. This enables the solar cell to have a higher open-circuit voltage, short-circuit current density, and fill factor, thereby improving the solar cell's photoelectric conversion efficiency and stability.

[0044] In one embodiment, the hole transport layer includes a stacked self-assembled material layer and a metal oxide layer, wherein the self-assembled material layer includes the self-assembled material, and the metal oxide layer includes a metal oxide. The self-assembled material can passivate interfacial defects in the light absorbing layer while also reducing the entry of metal ions into the light absorbing layer, thereby reducing degradation of the light absorbing layer, thereby improving the photoelectric conversion efficiency and stability of the solar cell.

[0045] In one embodiment, the self-assembly material layer has a thickness of 0.1 nm to 5 nm, a large specific surface area, a high utilization rate of coordinated atoms, and good self-assembly performance.

[0046] In one embodiment, the metal oxide includes at least one of nickel oxide, molybdenum oxide, and tungsten oxide; and / or the thickness of the metal oxide layer is 10nm-100nm, achieving a better hole transport effect. The self-assembled material provided above in this application can prevent the metal ions of the metal oxide provided above from entering the light absorption layer, such as preventing Ni 3+ Contact light absorption layer to reduce Ni 3+ Reacting with the perovskite material causes degradation of the perovskite material, which is beneficial to improving the photoelectric conversion efficiency and stability of solar cells.

[0047] In one embodiment, a light absorbing layer is included, wherein the light absorbing layer includes a perovskite material, wherein the chemical formula of the perovskite material is ABX3 or A2CDX6, wherein A is at least one of MA, FA, and Cs, B is at least one of Pb and Sn, C is Ag+, and D is Bi 3+ 、Sb 3+ 、In 3+ At least one of , X is at least one of Br, I, and provides a specific light absorption layer material. The self-assembled material provided above in the present application can passivate the perovskite provided above, which is beneficial to improving the photoelectric conversion efficiency and stability of the perovskite solar cell.

[0048] In one embodiment, the band gap of the light absorbing layer is 1.20eV-2.30eV, which can absorb a wider range of the solar spectrum; and / or the thickness of the light absorbing layer is 200nm-1000nm, which is beneficial to reduce the transmittance of light, thereby increasing the light absorption rate, and at the same time is beneficial to reduce the probability of electrons being recombined during the transmission process, and the solar cell has a higher photoelectric conversion efficiency.

[0049] In one embodiment, the present invention further comprises an electron transport layer, a blocking layer, and a second electrode disposed on one side of the light absorbing layer, and a first electrode disposed on the other side of the light absorbing layer, wherein the blocking layer is located between the electron transport layer and the second electrode;

[0050] Optionally, the electron transport layer comprises [6,6]-phenyl-C 61 -Butyric acid methyl ester, [6,6]-phenyl-C 71 - at least one of methyl butyrate, fullerene C60, fullerene C70, tin dioxide, zinc oxide, perylene imide materials, and naphthalene imide materials, and / or the thickness of the electron transport layer is 5 nm to 100 nm;

[0051] Optionally, the barrier layer includes 2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline, SnO2, ZnO, CeO x At least one of the following, and / or the thickness of the barrier layer is 0.5nm-20nm;

[0052] Optionally, the second electrode includes at least one of Ag, Cu, C, Au, Al, ITO, AZO, BZO, and IZO, and / or the thickness of the second electrode is 10 nm-1000 nm;

[0053] Optionally, the first electrode includes at least one of FTO, ITO, AZO, BZO, and IZO, and / or the thickness of the first electrode is 10 nm-1000 nm.

[0054] The light-absorbing layer absorbs photons from sunlight, generating excitations that excite electrons in the valence band to produce photogenerated holes and electron pairs. Free electrons are transported through the second transport layer to the second electrode, while free holes are transported through the first transport layer to the first electrode. After passing through the second transport layer, free electrons are collected by the second electrode, while free holes are collected by the first electrode after passing through the first transport layer. In other words, by designing the first electrode, first transport layer, light-absorbing layer, second transport layer, and second electrode in this way, a potential difference is formed between the first and second electrodes, allowing the solar cell and an external load to form a closed circuit, generating current.

[0055] In order to solve the above technical problems, another technical solution adopted in this application is: to provide a self-assembling material, including a first self-assembling molecular material, wherein the structural formula of the first self-assembling molecular material is Wherein, Ar represents an aromatic group, Ar includes at least one coordinating atom, the coordinating atom contains an unbonded lone pair of electrons, and the coordinating atom includes one or more of a phosphorus atom, an arsenic atom, a sulfur atom, and a selenium atom; L includes one or more of a carbon-containing group, a nitrogen-containing group, an oxygen-containing group, a silicon-containing group, a phosphorus-containing group, and a sulfur-containing group, and the value of n is 0-10; A includes a hydrophilic group.

[0056] The Ar group of the first self-assembled molecular material is used to contact the light absorption layer of the solar cell to passivate and improve the surface defects of the light absorption layer. By introducing one of phosphorus atoms, arsenic atoms, sulfur atoms, and selenium atoms as a coordination atom in the Ar group, the atomic radius of the coordination atom is larger, and the unbonded lone pair electrons in the coordination atom can combine with the low-coordinated lead vacancies in the light absorption layer to form a strong coordination bond, thereby achieving passivation of the low-coordinated lead in the light absorption layer and reducing defects on the interface of the light absorption layer, so that the solar cell has higher photoelectric conversion efficiency and better stability.

[0057] To solve the above technical problems, another technical solution adopted by the present application is to provide an electrical device comprising any of the above-mentioned solar cells. The electrical device has at least the same advantages as the solar cell.

[0058] The above description is only an overview of the technical solution of the present application. In order to more clearly understand the technical means of the present application, it can be implemented in accordance with the contents of the specification. In order to make the above and other purposes, features and advantages of the present application more obvious and easy to understand, the specific implementation methods of the present application are listed below. BRIEF DESCRIPTION OF THE DRAWINGS

[0059] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0060] FIG1 is a schematic structural diagram of a solar cell provided in an embodiment of the present application.

[0061] In the attached figure:

[0062] 100. Solar cell; 11. First electrode; 12. First transmission layer; 13. Light absorption layer; 14. Second transmission layer; 15. Second electrode; 16. Blocking layer. DETAILED DESCRIPTION

[0063] In order to make the purpose, technical solution and effect of this application clearer and more specific, the following embodiments of the technical solution of this application will be described in detail with reference to the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solution of this application and are therefore only examples and are not intended to limit the scope of protection of this application.

[0064] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this application belongs; the terms used herein are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" and any variations thereof in the specification and claims of this application and the above-mentioned figure descriptions are intended to cover non-exclusive inclusions.

[0065] In the description of the embodiments of the present application, the technical terms "first" and "second" are used only to distinguish different objects and should not be understood as indicating or implying relative importance or implicitly indicating the quantity, specific order, or primary and secondary relationship of the indicated technical features. In the description of the embodiments of the present application, the term "multiple" refers to more than two (including two), similarly, "multiple groups" refers to more than two (including two), and "multiple pieces" refers to more than two (including two), unless otherwise clearly and specifically defined.

[0066] References herein to "embodiments" mean that a particular feature, structure, or characteristic described in connection with the embodiments may be included in at least one embodiment of the present application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor does it constitute an independent or alternative embodiment that is mutually exclusive of other embodiments. It is understood, both explicitly and implicitly, by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0067] In the description of the embodiments of this application, the term "and / or" is simply a description of the association relationship between associated objects, indicating that three relationships can exist. For example, A and / or B can represent the following three situations: A exists alone, A and B exist simultaneously, and B exists alone. In addition, the character " / " in this document generally indicates that the associated objects are in an "or" relationship.

[0068] Amounts, ratios, and other numerical values ​​are presented herein in a range format. It should be understood that such range format is used for convenience and brevity and should be interpreted flexibly to include not only the values ​​explicitly specified as range limits, but also all individual values ​​or sub-ranges encompassed within the range, as if each value and sub-range were explicitly specified.

[0069] If not otherwise specified, all steps of the present application may be performed sequentially, randomly, or in parallel, preferably sequentially. For example, the method includes steps (a) and (b), indicating that the method may include steps (a) and (b) performed sequentially, or may include steps (b) and (a) performed sequentially, or may include steps (a) and (b) performed simultaneously in parallel. For example, the method may further include step (c), indicating that step (c) may be added to the method in any order, for example, the method may include steps (a), (b), and (c), or may include steps (a), (c), and (b), or may include steps (c), (a), and (b), etc.

[0070] With the rapid development of new energy technologies, solar cells have been widely used in military, aerospace, industry, commerce, agriculture, and communications. Perovskite solar cells have gradually become a hot topic in next-generation solar cell research due to their high photoelectric conversion efficiency, simple manufacturing process, and low production and material costs.

[0071] There are a large number of defects on the perovskite interface, which affect the photoelectric conversion efficiency and stability of perovskite solar cells. In order to improve the photoelectric conversion efficiency and stability of perovskite solar cells, self-assembly materials can be used to passivate the perovskite interface. Existing self-assembly materials contain three parts, namely the end group (Ar), the carbon chain (L), and the head group (A). Among them, the end group contacts the perovskite interface. The active functional groups on the end group are mainly alkoxy, aniline, etc. The oxygen and nitrogen atoms with lone pairs of electrons on the end group can passivate the low-coordinated lead vacancies to a certain extent, thereby improving the photoelectric conversion efficiency and stability of perovskite solar cells. However, the effect of the oxygen and nitrogen atoms with lone pairs of electrons on the lead vacancies is not strong, the degree of passivation is limited, and the improvement of the photoelectric conversion efficiency of perovskite solar cells is limited.

[0072] Based on this, the present application provides a self-assembly material, a solar cell and an electrical device to enhance the interaction between the self-assembly material and the lead vacancies on the perovskite, enhance the passivation effect of the self-assembly material on the perovskite interface, and thereby enhance the photoelectric conversion efficiency and stability of the perovskite solar cell.

[0073] Please refer to FIG1 , which is a schematic structural diagram of a solar cell provided in an embodiment of the present application.

[0074] The solar cell 100 includes a substrate layer (not shown), a first electrode 11, a first transmission layer 12, a light absorbing layer 13, a second transmission layer 14, and a second electrode 15 stacked in sequence. The solar cell 100 includes a self-assembly material.

[0075] In the case of a trans-structure solar cell, the first electrode 11 is the cathode, the first transport layer 12 is the hole transport layer, the second transport layer 14 is the electron transport layer, and the second electrode 15 is the cathode. In the case of a regular structure solar cell, the first electrode 11 is the cathode, the first transport layer 12 is the electron transport layer, the second transport layer 14 is the hole transport layer, and the second electrode 15 is the cathode.

[0076] Now, taking a solar cell with an inverted structure as an example, the solar cell 100 is described in detail.

[0077] The light absorption layer 13 is used to absorb light and directly convert light energy into electrical energy through the photoelectric effect or photochemical effect. The light absorption layer 13 includes a light-absorbing material with a photoelectric conversion function. The light-absorbing material absorbs photons from sunlight to generate excitation, which excites electrons in the valence band to produce photogenerated holes and electron pairs. Free electrons are transmitted to the second electrode 15 through the second transport layer 14, and free holes are transmitted to the first electrode 11 through the first transport layer 12. After passing through the second transport layer 14, the free electrons are collected by the second electrode 15, and after passing through the first transport layer 12, the free holes are collected by the first electrode 11. A potential difference is formed between the first electrode 11 and the second electrode 15. The solar cell and the external load form a closed loop, and current is generated in the loop.

[0078] In one embodiment, the material of the light absorbing layer 13 includes, but is not limited to, perovskite. The chemical formula of perovskite is ABX3 or A2CDX6, wherein A is an inorganic cation and / or an organic cation, B is an inorganic cation and / or an organic cation, C is an inorganic cation and / or an organic cation, D is an inorganic cation and / or an organic cation, and X is an inorganic anion and / or an organic anion.

[0079] A is an inorganic cation, or an organic cation, or a mixture of an inorganic cation and an organic cation. Optionally, A is a methylamino group (CH3NH3 + )(MA + ), carbamimidyl (HC(NH2)2+ )(FA + ), cesium ions (Cs + ) at least one of .

[0080] B is an inorganic cation, an organic cation, or a mixture of an inorganic cation and an organic cation. Optionally, B is a divalent metal ion Pb 2+ and Sn 2+ At least one of .

[0081] C is an inorganic cation, an organic cation, or a mixture of an inorganic cation and an organic cation. Optionally, C is a monovalent metal ion Ag. + wait.

[0082] D is an inorganic cation, or an organic cation, or a mixture of an inorganic cation and an organic cation. Optionally, D is a trivalent metal ion bismuth cation Bi 3+ 、Antimony cation Sb 3+ 、Indium cation In 3+ At least one of .

[0083] X is an inorganic anion, an organic anion, or a mixture of an inorganic anion and an organic anion. Optionally, X is one or more halogen anions, and further optionally bromide ion (Br - ), iodide ion (I - ) at least one of .

[0084] In one embodiment, the band gap of the light absorbing layer 13 is 1.20 eV-2.30 eV, which can absorb a wide range of the solar spectrum. At the same time, the energy level of the light absorbing layer 13 can match the energy levels of the hole transport layer and the electron transport layer.

[0085] In one embodiment, the thickness of the light absorbing layer 13 is 200 nm-1000 nm, which is beneficial to reduce light transmission, thereby increasing light absorption rate, and at the same time, it is beneficial to reduce the probability of electrons being recombined during transmission, and the solar cell has a higher photoelectric conversion efficiency.

[0086] The second transport layer 14 (electron transport layer) is provided on one side of the light absorbing layer 13. The function of the second transport layer 14 (electron transport layer) is to efficiently transport the free electrons generated by the light absorbing layer 13 (perovskite layer), effectively block the passage of free holes, and form an ohmic contact at the interface with the light absorbing layer 13. The material of the electron transport layer is at least one of the following materials and their derivatives and materials obtained by doping or passivation. The electron transport material includes but is not limited to [6,6]-phenyl-C 61 -Methyl butyrate (PC 61 BM), [6,6]-phenyl-C 71 -Methyl butyrate (PC71 BM), fullerene C60 (C60), fullerene C70 (C70), tin dioxide (SnO2), zinc oxide (ZnO), perylene diimide (PDI)-based materials, and naphthalene diimide (NDI)-based materials.

[0087] In one embodiment, the thickness of the second transport layer 14 (electron transport layer) is 5 nm to 100 nm.

[0088] The second electrode 15 is provided on the side of the second transmission layer 14 away from the light absorption layer 13. The second electrode 15 has the function of collecting free electrons. The second electrode 15 is generally an organic conductive material or an inorganic conductive material or a mixture of an organic conductive material and an inorganic conductive material. The organic conductive material is, for example, a conductive polymer, including but not limited to at least one of polyethylene dioxythiophene (PEDOT), polythiophene, and polyacetylene; the inorganic conductive material is, for example, but not limited to at least one of a transparent conductive oxide, a metal, and a carbon derivative, and the inorganic conductive material is specifically, for example, Ag, Cu, C, Au, Al, ITO (indium tin oxide), AZO (aluminum-doped zinc oxide), BZO (boron-doped zinc oxide), IZO (indium zinc oxide), etc.

[0089] In one embodiment, the thickness of the second electrode 15 is 10 nm-1000 nm.

[0090] In one embodiment, a blocking layer 16 is provided between the second transport layer 14 and the second electrode 15. The blocking layer 16 has a low valence band, which can effectively block the transport of holes and reduce the energy loss caused by charge recombination. Optionally, the material of the blocking layer 16 includes but is not limited to 2,9-dimethyl-4,7-biphenyl-1,10-o-phenanthroline (BCP), SnO2, ZnO, CeO x Optionally, the barrier layer 16 has a thickness of 0.5 nm to 20 nm.

[0091] The first transport layer 12 (hole transport layer) is disposed on one side of the light absorbing layer 13, and the first transport layer 12 and the second transport layer 14 are located on opposite sides of the light absorbing layer 13. The first transport layer 12 is used to transport holes to the corresponding first electrode 11 and prevent holes from diffusing in the opposite direction.

[0092] In one embodiment, the first transport layer 12 (hole transport layer) includes but is not limited to at least one of 2,2',7,7'-tetrakis(N,N-p-methoxyanilino)-9,9'-spirobifluorene (Spiro-OMeTAD), methoxytriphenylamine-fluoroformamidine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], poly(3,4-ethylenedioxythiophene), polystyrenesulfonic acid, poly3-hexylthiophene, triphenylamine with triptycene as the core, 3,4-ethylenedioxythiophene-methoxytriphenylamine, N-(4-phenylamino)carbazole-spirobifluorene, polythiophene, phosphate-based monomers, carbazole-based monomers, sulfonic acid-based monomers, triphenylamine-based monomers, aromatic monomers, metal oxides and cuprous thiocyanate, wherein the metal element in the metal oxide selected in the hole transport material includes at least one of Ni, Mo and Cu.

[0093] In one embodiment, a passivation layer is provided between the light absorbing layer 13 and the first transport layer 12 (hole transport layer), and the passivation layer is used to prevent defects on the interface between the light absorbing layer 13 and the hole transport layer to improve the performance of the perovskite solar cell. Optionally, the material of the passivation layer is a self-assembly material. Existing self-assembly materials include three parts, namely, an end group (Ar), a carbon chain (L), and a head group (A), wherein the end group is in contact with the perovskite interface of the light absorbing layer 13, and the active functional groups on the end group are mainly alkoxy, aniline, etc. The oxygen and nitrogen atoms of the lone pair electrons contained in the end group can passivate the low-coordinated lead to a certain extent, thereby achieving an improvement in the photoelectric conversion efficiency and stability of the perovskite solar cell. However, the effect of the oxygen and nitrogen atoms of the lone pair electrons on the lead vacancy is not strong, the degree of passivation is limited, and the improvement in the photoelectric conversion efficiency of the perovskite solar cell is limited.

[0094] It should be noted that the material of the first transport layer 12 (hole transport layer) can be a self-assembling material, which can simultaneously achieve hole transport while passivating the perovskite interface of the light absorption layer 13. In this case, the passivation layer between the light absorption layer 13 and the first transport layer 12 can be omitted. However, the interaction between the lone pair electrons of oxygen and nitrogen atoms in existing self-assembling materials and lead vacancies is not strong, and the degree of passivation is limited.

[0095] The first electrode 11 is disposed on the side of the first transport layer 12 (hole transport layer) away from the light absorbing layer 13. The first electrode 11 has the function of collecting free holes. The first electrode 11 is typically a transparent electrode. The first electrode 11 includes, but is not limited to, at least one of FTO (fluorine-doped SnO2 transparent conductive glass), ITO (indium tin oxide transparent conductive glass), AZO (aluminum-doped zinc oxide transparent conductive glass), BZO (boron-doped zinc oxide transparent conductive glass), and IZO (indium zinc oxide transparent conductive glass).

[0096] In one embodiment, the thickness of the first electrode 11 is 10 nm-1000 nm.

[0097] The base layer is a transparent base layer. The base layer may be made of glass and / or a polymer. Optionally, the polymer may include one or more of polyvinyl alcohol (PVA), polyester (PET), polyimide (PI), polyethylene naphthalate (PEN), and polydimethylsiloxane (PDMS). It should be noted that the base layer is optional; that is, in some embodiments, the base layer may not be provided.

[0098] The self-assembly material provided in the embodiment of the present application includes a first self-assembly molecular material, the structural formula of the first self-assembly molecular material is Self-assembly is the phenomenon in which the constituent elements of a system gather and organize into regular structures without the intervention of external human forces.

[0099] Wherein, Ar represents an aromatic group, Ar includes at least one coordinating atom, the coordinating atom containing an unbonded lone pair of electrons, and the coordinating atom includes one or more of a phosphorus atom, an arsenic atom, a sulfur atom, and a selenium atom. L includes one or more of a carbon-containing group, a nitrogen-containing group, an oxygen-containing group, a silicon-containing group, a phosphorus-containing group, and a sulfur-containing group, and n is 0-10. A includes a hydrophilic group.

[0100] The Ar group of the first self-assembling molecular material contacts the light-absorbing layer 13 of the solar cell 100, which includes a perovskite. This material passivates and improves surface defects in the light-absorbing layer 13. By incorporating one or more of phosphorus, arsenic, sulfur, and selenium atoms as coordinating atoms in the Ar group, the coordinating atoms have larger atomic radii. Unbonded lone pairs of electrons in the coordinating atoms can combine with low-coordinated lead vacancies in the light-absorbing layer to form strong coordination bonds, thereby passivating the low-coordinated lead in the perovskite and reducing defects at the perovskite interface. This results in the solar cell 100 having higher photoelectric conversion efficiency and better stability. Incorporating one or more of phosphorus, arsenic, sulfur, and selenium atoms as coordinating atoms in the Ar group increases the diversity of the first self-assembling molecular material, providing a wider range of materials for passivating lead vacancies in perovskites using the self-assembling material.

[0101] In the prior art, oxygen atoms or nitrogen atoms are used to passivate the low-coordinated lead of the perovskite. The embodiments of the present application use one of phosphorus atoms, arsenic atoms, sulfur atoms, and selenium atoms to passivate the low-coordinated lead of the perovskite. The binding strength of phosphorus atoms to lead vacancies is stronger than the binding strength of oxygen atoms to lead vacancies, and stronger than the binding strength of nitrogen atoms to lead vacancies. The binding strength of arsenic atoms to lead vacancies is stronger than the binding strength of oxygen atoms to lead vacancies, and stronger than the binding strength of nitrogen atoms to lead vacancies. The binding strength of sulfur atoms to lead vacancies is stronger than the binding strength of oxygen atoms to lead vacancies, and stronger than the binding strength of nitrogen atoms to lead vacancies. The binding strength of selenium atoms to lead vacancies is stronger than the binding strength of oxygen atoms to lead vacancies, and stronger than the binding strength of nitrogen atoms to lead vacancies. Therefore, using one of phosphorus atoms, arsenic atoms, sulfur atoms, and selenium atoms to passivate the low-coordinated lead of the perovskite can achieve a better passivation effect than using oxygen atoms or nitrogen atoms to passivate the low-coordinated lead of the perovskite, thereby improving the photoelectric conversion efficiency and stability of the solar cell 100.

[0102] By designing the A group of the first self-assembly molecular material as a hydrophilic group, the A group is anchored to the film layer on the side of the light absorbing layer 13 away from the second electrode 15 and is evenly laid out in an array, that is, it is orderly arranged into a self-assembled thin film on the film layer on the side of the light absorbing layer 13 away from the second electrode 15 to achieve self-assembly; at the same time, the A group will also passivate the film layer on the side of the light absorbing layer 13 away from the second electrode 15, passivate the defects on the surface of the film layer on the side of the light absorbing layer 13 away from the second electrode 15, which is beneficial to improving the photoelectric conversion efficiency and stability of the solar cell 100.

[0103] Specifically, when the hole transport layer of the solar cell 100 includes the above-mentioned self-assembly material provided in the embodiment of the present application, the A group of the first self-assembly molecular material contacts the first electrode 11 (at this time, the hole transport layer only includes the self-assembly material), or the A group of the first self-assembly molecular material contacts the metal oxide of the hole transport layer (at this time, the hole transport layer includes the metal oxide and the self-assembly material attached to the surface of the metal oxide, or the hole transport layer includes a stacked metal oxide layer and a self-assembly material layer); when the passivation layer of the solar cell 100 (the passivation layer is arranged between the light absorption layer 13 and the hole transport layer) includes the above-mentioned self-assembly material, the A group of the first self-assembly molecular material contacts the hole transport layer (at this time, the material of the hole transport layer can be a material in the prior art or the material of the hole transport layer includes the self-assembly material provided in the embodiment of the present application).

[0104] In one embodiment, Ar includes two or more of the above-mentioned coordination atoms, which can provide more coordination sites to passivate more interface defects and enhance the passivation effect of the first self-assembled molecular material on perovskite.

[0105] In one embodiment, Ar is any one of the following Ar1 to Ar12:

[0106] wherein X1 to X5 are selected from any one of -CR"2-, -NR"-, -O-, -SiR"2-, -PR"-, -S-, -As-, -Se-, -C(=O)-, -C(=S)-, -C(=NR")-, and -C(=CR"2)-, and m is 1-3; R1 to R 143 and R" are independently selected from any one of hydrogen, halogen, -OR', -OCOR', -NHCOR', -NR'2, R', halogen-substituted R', -SR', -PR'2, -AsR'2, -Se-; R' is any one of substituted or unsubstituted phenyl, thienyl, C1-C5 alkyl. By making Ar any one of Ar1 to Ar12, and for R1 to R in Ar1 to Ar12 143 X1 to X5 provide the above-mentioned multiple groups, which increases the selection diversity of the first self-assembly molecular material and can enhance the affinity between the first self-assembly molecular material and the light absorption material precursor solution. At the same time, it is conducive to uniform coating over a large area and improves preparation efficiency.

[0107] Optionally, when Ar is Ar1, at least one of R1 to R8 is selected from -PR'2, -SR', -AsR'2, -Se-; and / or, when Ar is Ar2, R9 to R 18 At least one of them is selected from -PR'2, -SR', -AsR'2, -Se-; and / or, when Ar is Ar3, R 19 to R 30 At least one of them is selected from -PR'2, -SR', -AsR'2, -Se-; and / or, when Ar is Ar4, R 31 to R 44 At least one of them is selected from -PR'2, -SR', -AsR'2, -Se-; and / or, when Ar is Ar5, R 45 to R 60 At least one of them is selected from -PR'2, -SR', -AsR'2, -Se-; and / or, when Ar is Ar6, R 61 to R 78 At least one of them is selected from -PR'2, -SR', -AsR'2, -Se-; and / or, when Ar is Ar10, and X1 does not contain phosphorus, sulfur, arsenic, or selenium, R 127 to R 134At least one of them is selected from -PR'2, -SR', -AsR'2, -Se-; and / or, when Ar is Ar11, and X2 to X3 do not contain phosphorus, sulfur, arsenic, or selenium, R 135 to R 138 At least one of them is selected from -PR'2, -SR', -AsR'2, -Se-; and / or, when Ar is Ar12, and X4 to X5 do not contain phosphorus, sulfur, arsenic, or selenium, R 139 to R 143 At least one of the groups is selected from -PR'2, -SR', -AsR'2, and -Se-. By selecting the groups in Ar1 to Ar12 as described above, Ar includes at least one phosphorus coordinating atom, one sulfur coordinating atom, one arsenic coordinating atom, or one selenium coordinating atom, thereby improving the passivation ability of lead vacancies in perovskites compared to the prior art.

[0108] Optionally, when Ar is Ar1, at least two of R1 to R8 are selected from one of -PR'2, -SR', -AsR'2, and -Se-; and / or, when Ar is Ar2, R9 to R 18 At least two of them are selected from one of -PR'2, -SR', -AsR'2, and -Se-; and / or, when Ar is Ar3, R 19 to R 30 At least two of them are selected from one of -PR'2, -SR', -AsR'2, and -Se-; and / or, when Ar is Ar4, R 31 to R 44 At least two of them are selected from one of -PR'2, -SR', -AsR'2, and -Se-; and / or, when Ar is Ar5, R 45 to R 60 At least two of them are selected from one of -PR'2, -SR', -AsR'2, -Se-; and / or, when Ar is Ar6, R 61 to R 78 At least two of them are selected from one of -PR'2, -SR', -AsR'2, and -Se-; and / or, when Ar is Ar7, R 79 to R 92 At least one of -PR'2, -SR', -AsR'2, -Se- is selected from one of: and / or, when Ar is Ar8, R 93 to R 108 At least one of -PR'2, -SR', -AsR'2, -Se- is selected from one of: and / or, when Ar is Ar9, R 109 to R126 At least one of -PR'2, -SR', -AsR'2, -Se- is selected from one of the group; and / or, when Ar is Ar10 and X1 does not contain phosphorus, sulfur, arsenic, or selenium, R 127 to R 134 At least two of them are selected from -PR'2, -SR', -AsR'2, -Se-; or when Ar is Ar10 and X1 contains one of phosphorus, sulfur, arsenic, and selenium groups, R 127 to R 134 At least one of -PR'2, -SR', -AsR'2, -Se- is selected from one of the following groups: and / or, when Ar is Ar11 and X2 to X3 do not contain phosphorus, sulfur, arsenic, or selenium, R 135 to R 138 At least two of them are selected from -PR'2, -SR', -AsR'2, -Se-; or when Ar is Ar11 and X2 to X3 contain one of phosphorus, sulfur, arsenic, and selenium groups, R 135 to R 138 At least one of -PR'2, -SR', -AsR'2, -Se- is selected from one of the following groups: and / or, when Ar is Ar12 and X4 to X5 do not contain phosphorus, sulfur, arsenic, or selenium, R 139 to R 143 At least two of them are selected from -PR'2, -SR', -AsR'2, -Se-; or when Ar is Ar12 and X4 to X5 contain one of phosphorus, sulfur, arsenic, and selenium groups, R 139 to R 143 At least one of -PR'2, -SR', -AsR'2, and -Se- is selected from the group consisting of -PR'2, -SR', -AsR'2, and -Se-. By selecting the groups in Ar1 to Ar12 as described above, Ar includes at least two coordinating atoms selected from phosphorus, sulfur, selenium, and arsenic atoms, thereby providing more coordination sites to passivate more interfacial defects in the light absorbing layer, further enhancing the passivation effect of the first self-assembled molecular material on the perovskite.

[0109] Optionally, when Ar is Ar1, the substituents in R1 to R8 are the same; and / or, when Ar is Ar2, R9 to R 18 and / or, when Ar is Ar3, R 19 to R 30 and / or, when Ar is Ar4, R 31 to R 44 and / or, when Ar is Ar5, R 45 to R 60and / or, when Ar is Ar6, R 61 to R 78 and / or, when Ar is Ar7, R 79 to R 92 and / or, when Ar is Ar8, R 93 to R 108 and / or, when Ar is Ar9, R 109 to R 126 and / or, when Ar is Ar10, R 127 to R 134 and / or, in the case where Ar is Ar11, the substituents in X2 to X3 are the same, R 135 to R 138 and / or, in the case where Ar is Ar12, the substituents in X4 to X5 are the same, R 139 to R 143 The substituents in the same, simplifying the preparation process of the material and reducing the preparation cost.

[0110] In one embodiment, A includes a hydrophilic group, and the hydrophilic group includes one or more oxyacid groups, and the oxyacid groups are anchored to the film layer on the side of the light absorbing layer 13 away from the second electrode 15 to achieve self-assembly. Selecting oxyacid groups as anchoring groups can reduce the difficulty of the synthesis process. Specifically, the oxyacid groups can be orderly arranged into a self-assembled molecular film on the first electrode 11 (in this case, the material of the hole transport layer can be only self-assembled materials); or they can be in contact with the metal oxide hole transport layer and orderly arranged into a self-assembled molecular film on the metal oxide hole transport layer, while hindering the contact between the metal ions of the metal oxide hole transport layer and the light absorbing layer to reduce the degradation of the light absorbing layer (in this case, the hole transport layer includes a metal oxide and a self-assembled material attached to the surface of the metal oxide, or the hole transport layer includes a stacked metal oxide layer and a self-assembled material layer).

[0111] Optionally, the oxyacid group includes -COOH, a salt corresponding to -COOH, -PO(OH)2, a salt corresponding to -PO(OH)2, -PHO(OH), a salt corresponding to -PHO(OH), -SO2(OH), a salt corresponding to -SO2(OH), -B(OH) 2、 By making the oxyacid group any of the above salts, the selection diversity of the first self-assembling molecular material is increased, and the affinity of the anchoring group to the film layer on the side of the light absorbing layer away from the second electrode can be improved, thereby enhancing the anchoring strength.

[0112] In one embodiment, L is at least one of -CR"2-, -NR"-, -O-, -SiR"2-, -PR"-, -S-, -C(=O)-, -C(=S)-, -C(=NR")-, -C(=CR"2)-, and the following L1 to L8.

[0113] Among them, Z1 to Z 40 are independently selected from any one of =CR”-, =N-; X6 to X 11 Respectively selected from any one of -CR"2-, -NR"-, -O-, -SiR"2-, -PR"-, -S-, -As-, -Se-, -C(=O)-, -C(=S)-, -C(=NR")-, -C(=CR"2)-; R" is selected from any one of hydrogen, halogen, -OR', -OCOR', -NHCOR', -NR'2, R', halogen-substituted R', -SR', -PR'2, -AsR'2, -Se-; R' is any one of substituted or unsubstituted phenyl, thienyl, and C1-C5 alkyl. By making the L group any of the above, the selection diversity of the first self-assembled molecular material is increased. When L includes any one of phosphorus atoms, sulfur atoms, arsenic atoms, and selenium atoms, more coordination sites can be provided to passivate more interface defects of the light absorption layer 13, thereby enhancing the passivation effect of the first self-assembled molecular material on perovskite.

[0114] In one embodiment, the first self-assembling molecular material is selected from any one of SAM1 to SAM17:

[0115] The first self-assembling molecular material is selected from any one of SAM1 to SAM17. SAM1 to SAM17 are composed of a combination of one of the aforementioned multiple groups of Ar, one of the aforementioned multiple groups of L, and one of the aforementioned multiple groups of A. SAM1 to SAM17 include at least one coordinating atom selected from phosphorus, sulfur, arsenic, and selenium atoms, and also include nitrogen or oxygen atoms that can coordinate with the lead vacancies of the perovskite. Compared to the self-assembling molecules in the prior art that passivate by binding with nitrogen or oxygen atoms to the lead vacancies of the perovskite, and the binding strength of phosphorus, sulfur, arsenic, and selenium atoms to the lead vacancies of the perovskite is stronger than that of nitrogen and oxygen atoms to the lead vacancies of the perovskite, the use of any one of SAM1 to SAM17 can improve the passivation effect on the perovskite, thereby improving the photoelectric conversion efficiency and stability of the solar cell 100.

[0116] The present application also provides a method for preparing SAM1, specifically:

[0117] Step 1: Compound 1 (1 mmol), compound 2 (8 mL), 50% potassium hydroxide aqueous solution (KOH (aq), 5 mL), and tetrabutylammonium bromide (TBAB, 5% mmol) were mixed and heated at 70 degrees Celsius for 20 hours under nitrogen protection. Compound 3 was obtained after separation by silica gel chromatography column with a yield of about 83%. 1 H NMR(400MHz, CDCl3)δ7.73(d,J=7.2Hz,2H),7.28(s,2H),7.06(d,J=7.2Hz, 2H),4.18-4.15(m,2H),3.54-3.51(m,2H),2.45(s,6H),1.83-1.74(m,4H).

[0118] Step 2: Compound 3 (0.8 mmol) and triethyl phosphite (P(OEt)3, 10 mL) were mixed and heated at 180 degrees Celsius for 12 hours under nitrogen protection. Triethyl phosphite was removed by vacuum distillation. The crude product was mixed with tributylsilyl bromide (TMSBr, 0.72 mmol) and 1,4-dioxane (5 mL). The solvent was removed by stirring at room temperature for 20 hours under nitrogen protection. Methanol (5 mL) was added and stirred for 12 hours. Deionized water (1 mL) was added to precipitate a solid powder, which was filtered and washed to obtain SAM1 with a yield of about 45%. 1 H NMR (400MHz, DMSO-d6) δ7.73(d,J=7.2Hz,2H),7.28(s,2H),7.06(d,J=7.2Hz ,2H),4.18-4.15(m,2H),2.45(s,6H),1.83-1.74(m,4H),1.26-1.22(m,2H).

[0119] The present application also provides a method for preparing SAM2, specifically:

[0120] Step 1: Compound 1 (1 mmol), compound 4 (1.2 mmol), cuprous iodide (CuI, 5% mmol), potassium hydroxide (KOH, 1.2 mmol), and toluene (10 mmol) were mixed and heated at 110 degrees Celsius for 20 hours under nitrogen protection. Compound 5 was obtained after separation by silica gel chromatography column with a yield of about 76%. 1H NMR (400MHz, CDCl3) δ7.83(d,J=7.2Hz,2H),7.48(d,J=7.2Hz,4H),7.28(d,J=7.2Hz,4H),7 .06(d,J=7.2Hz,2H),4.18-4.15(m,2H),3.65-3.62(m,2H),3.06-3.03(m,2H),2.45(s,6H).

[0121] Step 2: Compound 5 (0.7 mmol) and triethyl phosphite (P(OEt)3, 10 mL) were mixed and heated at 180 degrees Celsius for 12 hours under nitrogen protection. The triethyl phosphite was removed by vacuum distillation. The crude product was mixed with tributylsilyl bromide (TMSBr, 0.72 mmol) and 1,4-dioxane (5 mL). The mixture was stirred at room temperature for 20 hours under nitrogen protection and the solvent was removed. Methanol (5 mL) was added and stirred for 12 hours. Deionized water (1 mL) was added to precipitate a solid powder, which was filtered and washed to obtain SAM2 with a yield of 35%. 1 H NMR (400MHz, DMSO-d6) δ7.87(d,J=7.2Hz,2H),7.49(d,J=7.2Hz,4H),7.28(d,J=7.2Hz,2H), 7.06(d,J=7.2Hz,2H),2.82-2.80(m,2H),3.06-3.03(m,2H),2.45(s,6H),2.03-1.99(m,2H).

[0122] The present application also provides a method for preparing SAM3, specifically:

[0123] Step 1: Compound 6 (1 mmol), compound 2 (8 mL), 50% potassium hydroxide aqueous solution (KOH (aq), 5 mL), and tetrabutylammonium bromide (TBAB, 5% mmol) were mixed and heated at 70 degrees Celsius for 20 hours under nitrogen protection. Compound 7 was obtained after separation by silica gel chromatography column with a yield of about 79%. 1 H NMR (400MHz, CDCl3) δ8.97(d,J=7.2Hz,2H),8.12(d,J=7.2Hz,2H),7.59(d,J=7.2Hz,4H),7.20(d,J= 7.2Hz,2H),4.18-4.15(m,2H),3.55-3.52(m,2H),2.45(s,6H),1.82-1.79(m,2H),1.75-1.73(m,2H).

[0124] Step 2: Compound 7 (0.8 mmol) and triethyl phosphite (P(OEt)3, 10 mL) were mixed and heated at 180 degrees Celsius for 12 hours under nitrogen protection. The triethyl phosphite was removed by vacuum distillation. The crude product was mixed with tributylsilyl bromide (TMSBr, 0.72 mmol) and 1,4-dioxane (5 mL). The mixture was stirred at room temperature for 20 hours under nitrogen protection and the solvent was removed. Methanol (5 mL) was added and stirred for 12 hours. Deionized water (1 mL) was added to precipitate a solid powder, which was filtered and washed to obtain SAM3 with a yield of about 43%. 1 H NMR (400MHz, DMSO-d6) δ8.97(d,J=7.2Hz,2H),8.12(d,J=7.2Hz,2H),7.59(d,J=7.2Hz,4H),7.20(d,J =7.2Hz,2H),4.18-4.15(m,2H),2.45(s,6H),1.75-1.73(m,2H),1.67-1.65(m,2H),1.27-1.25(m,2H).

[0125] The present application also provides a method for preparing SAM4, specifically:

[0126] Step 1: Compound 8 (1 mmol), compound 4 (1.2 mmol), sodium tert-butoxide (t-BuONa, 1.2 mmol), tri-tert-butylphosphine (t-Bu3P, 10% mmol), tris(dibenzylideneacetone)dipalladium(0) (Pd2dba3, 5% mmol), toluene (10 mL) were heated and stirred at 110 degrees Celsius under nitrogen protection for 12 hours. After the reaction, the solvent was removed and purified by silica gel chromatography to obtain compound 9 with a yield of about 85%. 1 H NMR (400MHz, CDCl3) δ7.49 (d, J = 7.2 Hz, 4H), 7.19 (d, J = 7.2 Hz, 2H), 7.08-7.03 (m, 6H), 3.65-3.62 (m, 2H), 2.95-2.92 (m, 2H), 2.38 (s, 6H).

[0127] Step 2: Compound 9 (0.8 mmol) and triethyl phosphite (P(OEt)3, 10 mL) were mixed and heated at 180 degrees Celsius for 12 hours under nitrogen protection. The triethyl phosphite was removed by vacuum distillation. The crude product was mixed with tributylsilyl bromide (TMSBr, 0.72 mmol) and 1,4-dioxane (5 mL). The mixture was stirred at room temperature for 20 hours under nitrogen protection and the solvent was removed. Methanol (5 mL) was added and stirred for 12 hours. Deionized water (1 mL) was added to precipitate a solid powder, which was filtered and washed to obtain SAM4 with a yield of about 51%. 1 H NMR (400MHz, DMSO-d6) δ7.49 (d, J = 7.2 Hz, 4H), 7.19 (d, J = 7.2 Hz, 2H), 7.08-7.03 (m, 6H), 2.71-2.68 (m, 2H), 2.38 (s, 6H), 2.03-2.00 (m, 2H).

[0128] The present application also provides a method for preparing SAM5, specifically:

[0129] Step 1: Compound 10 (1 mmol) and compound 11 (2.2 mmol) were dissolved in N,N-dimethylformamide (DMF, 5 mL), potassium hydroxide (KOH, 4.8 mmol) was added, and the mixture was heated and stirred at 110 degrees Celsius under nitrogen protection for 12 hours. After the reaction, dilute hydrochloric acid was added to precipitate a solid precipitate, which was filtered and washed to obtain SAM5 with a yield of about 23%. 1 H NMR (400MHz, DMSO-d6) δ7.88 (d, J = 7.2Hz, 2H), 7.47-7.36 (m, 14H), 7.15-7.12 (m, 10), 4.18-4.15 (m, 2H), 1.76-1.63 (m, 4H), 1.26-1.23 (m, 2H).

[0130] The present application also provides a method for preparing SAM6, specifically:

[0131] Step 1: Compound 12 (0.8 mmol) and triethyl phosphite (P(OEt)3, 10 mL) were mixed and heated at 180 degrees Celsius for 12 hours under nitrogen protection. Triethyl phosphite was removed by vacuum distillation. The crude product was mixed with tributylsilyl bromide (TMSBr, 0.72 mmol) and 1,4-dioxane (5 mL). The mixture was stirred at room temperature for 20 hours under nitrogen protection, and the solvent was removed. Methanol (5 mL) was added and stirred for 12 hours. Deionized water (1 mL) was added to precipitate a solid powder, which was filtered and washed to obtain compound 13 with a yield of about 51%.1 H NMR (400MHz, DMSO-d6) δ7.38 (d, J = 7.2 Hz, 4H), 7.18 (d, J = 7.2 Hz, 2H), 7.07-7.03 (m, 6H), 4.18-4.15 (m, 2H), 2.71-2.68 (m, 2H), 2.03-2.00 (m, 2H).

[0132] Step 2: Compound 13 (1 mmol) and compound 11 (2.2 mmol) were dissolved in N,N-dimethylformamide (DMF, 5 mL), and potassium hydroxide (KOH, 4.8 mmol) was added. The mixture was heated and stirred at 110 degrees Celsius under nitrogen protection for 12 hours. After the reaction, dilute hydrochloric acid was added to precipitate a solid precipitate. The precipitate was filtered and washed to obtain SAM6 with a yield of about 36%. 1 H NMR (400MHz, DMSO-d6) δ7.47-7.44(m,12H),7.20-7.03(m,20H),2.71-2.68(m,2H),2.03-2.00(m,2H).

[0133] The present application also provides a method for preparing SAM7, specifically:

[0134] Step 1: Compound 14 (1 mmol) and compound 15 (1.1 mmol) were dissolved in N,N-dimethylformamide (DMF, 5 mL), potassium hydroxide (KOH, 3.6 mmol) was added, and heated at 110 degrees Celsius for 12 hours under nitrogen protection. After the reaction, dilute hydrochloric acid was added to acidify to obtain solid powder SAM7 with a yield of 45%. 1 H NMR (400MHz, DMSO-d6) δ7.40-7.37(m,4H),7.22-7.15(m,4H),7.05(d,J=7.2Hz,4H),2.82-2.79(m,2H),2.03-2.00(m,2H).

[0135] The present application also provides a method for preparing SAM8, specifically:

[0136] Step 1: Compound 16 (1 mmol), compound 17 (5 mmol), palladium acetate (Pd(OAc)2, 10% mmol), 1,2-bis(diphenylphosphino)ethane nickel chloride (Ni(dppe)Cl2, 10% mmol), bis(diphenylphosphino)ferrocene (dppf, 10% mmol), potassium monohydrogen phosphate (K2HPO4, 2 mmol), zinc powder (Zn, 2.5 mmol), 4A molecular sieves (4A MS, 100 mg) were dissolved in N,N-dimethylacetamide (DMAc, 10 mL) and heated at 100 degrees Celsius for 12 hours under nitrogen protection. After the reaction, dilute hydrochloric acid was added to acidify to obtain solid powder compound 18 with a yield of 88%. 1 H NMR (400MHz, DMSO-d6) δ7.16-7.10 (m, 4H), 6.83 (s, 2H), 2.45 (s, 6H).

[0137] Step 2: Compound 18 (1 mmol), compound 2 (8 mL), 50% potassium hydroxide aqueous solution (KOH (aq), 5 mL), and tetrabutylammonium bromide (TBAB, 5% mmol) were mixed and heated at 70 degrees Celsius for 20 hours under nitrogen protection. Compound 19 was obtained after separation by silica gel chromatography column with a yield of about 78%. 1 H NMR (400MHz, CDCl3) δ7.19-7.07(m,4H),6.83(s,2H),3.95-3.90(m,2H),3.54-3.50(m,2H),2.45(s,6H),1.83-1.80(m,2H),1.50-1.47(m,2H).

[0138] Step 3: Compound 19 (0.8 mmol) and triethyl phosphite (P(OEt)3, 10 mL) were mixed and heated at 180 degrees Celsius for 12 hours under nitrogen protection. The triethyl phosphite was removed by vacuum distillation. The crude product was mixed with tributylsilyl bromide (TMSBr, 0.72 mmol) and 1,4-dioxane (5 mL). The mixture was stirred at room temperature for 20 hours under nitrogen protection, and the solvent was removed. Methanol (5 mL) was added and stirred for 12 hours. Deionized water (1 mL) was added to precipitate a solid powder, which was filtered and washed to obtain SAM8 with a yield of about 58%. 1 H NMR (400MHz, DMSO-d6) δ7.16-7.10(m,4H),6.83(s,2H),3.96-3.91(m,2H),2.45(s,6H),1.68-1.65(m,2H),1.51-1.47(m,2H),1.28-1.25(m,2H).

[0139] The present application also provides a method for preparing SAM9, specifically:

[0140] Step 1: Compound 20 (1 mmol), compound 2 (8 mL), 50% potassium hydroxide aqueous solution (KOH (aq), 5 mL), and tetrabutylammonium bromide (TBAB, 5% mmol) were mixed and heated at 70 degrees Celsius for 20 hours under nitrogen protection. Compound 21 was obtained after separation by silica gel chromatography column with a yield of about 70%. 1 H NMR (400MHz, CDCl3) δ6.75(s,2H),4.18-4.14(m,2H),3.54-3.50(m,2H),2.37(s,6H),1.83-1.80(m,2H),1.76-1.72(m,2H).

[0141] Step 2: Compound 21 (0.8 mmol) and triethyl phosphite (P(OEt)3, 10 mL) were mixed and heated at 180 degrees Celsius for 12 hours under nitrogen protection. Triethyl phosphite was removed by vacuum distillation. The crude product was mixed with tributylsilyl bromide (TMSBr, 0.72 mmol) and 1,4-dioxane (5 mL). The mixture was stirred at room temperature for 20 hours under nitrogen protection and the solvent was removed. Methanol (5 mL) was added and stirred for 12 hours. Deionized water (1 mL) was added to precipitate a solid powder, which was filtered and washed to obtain SAM9 with a yield of about 59%. 1 H NMR (400MHz, DMSO-d6) δ6.78(s,2H),4.20-4.16(m,2H),2.39(s,6H),1.74-1.65(m,4H),1.28-1.25(m,2H).

[0142] The present application also provides a method for preparing SAM10, specifically:

[0143] Step 1: Compound 22 (0.8 mmol) and triethyl phosphite (P(OEt)3, 10 mL) were mixed and heated at 180 degrees Celsius for 12 hours under nitrogen protection. The triethyl phosphite was removed by vacuum distillation. The crude product was mixed with tributylsilyl bromide (TMSBr, 0.72 mmol) and 1,4-dioxane (5 mL). The mixture was stirred at room temperature for 20 hours under nitrogen protection, and the solvent was removed. Methanol (5 mL) was added and stirred for 12 hours. Deionized water (1 mL) was added to precipitate a solid powder, which was filtered and washed to obtain SAM10 with a yield of about 47%. 1H NMR (400MHz, DMSO-d6) δ7.26(s,2H),4.05-4.02(m,2H),2.53(s,6H),2.33(s,3H),1.97-1.94(m,2H),1.66-1.63(m,2H).

[0144] The present application also provides a method for preparing SAM11, specifically:

[0145] Step 1: Compound 23 (1 mmol) was dissolved in tetrahydrofuran (THF, 10 mL), and the temperature was lowered to -78 degrees Celsius under nitrogen protection. Butyl lithium solution (2.5 M hexane solution, 1.2 mmol) was slowly added dropwise. After stirring at low temperature for 2 hours, triisopropyl borate (TPB, 1.3 mmol) was added dropwise. After transferring to room temperature and stirring for 12 hours, the mixture was purified by silica gel chromatography to obtain SAM11 with a yield of 36%. 1 H NMR (400MHz, DMSO-d6) δ7.71 (d, J = 7.5 Hz, 2H), 7.49 (d, J = 7.5 Hz, 4H), 7.18 (d, J = 7.5 Hz, 2H), 7.08 (d, J = 7.5 Hz, 4H), 2.38 (s, 6H).

[0146] The present application also provides a method for preparing SAM12, specifically:

[0147] Step 1: Compound 24 (1 mmol), compound 25 (1.1 mmol), tetrakis(triphenylphosphine palladium (0)), potassium carbonate aqueous solution (2 M, 5 mL), and toluene (10 mL) were mixed and heated at 110 degrees Celsius for 48 hours under nitrogen protection. The product compound 26 was separated by silica gel chromatography column with a yield of 73%. 1 H NMR (400MHz, DMSO-d6) δ8.42(d,J=7.5Hz,1H),7.97(d,J=7.5Hz,1H),7.55(d,J=7.5Hz,2H),7.49(d,J=7. 5Hz, 4H), 7.18 (d, J = 7.5Hz, 2H), 7.08 (d, J = 7.5Hz, 4H), 4.29-4.26 (m, 2H), 2.38 (s, 6H), 1.30-1.26 (m, 3H).

[0148] Step 2: Compound 26 (1 mmol) was dissolved in tetrahydrofuran (THF, 10 mL), and an aqueous sodium hydroxide solution (2 M, 10 mL) was added. After heating at 75 °C for 20 h, dilute hydrochloric acid was added for acidification. The precipitate was filtered and washed to give the product SAM12 with a yield of 89%. 1H NMR (400 MHz, DMSO-d6) δ 12.75 (s, 1H), 8.58 (d, J = 7.5 Hz, 1H), 8.07 (d, J = 7.5 Hz, 1H), 7.55 (d, J = 7.5 Hz, 2H), 7.49 (d, J = 7.5 Hz, 4H), 7.18 (d, J = 7.5 Hz, 2H), 7.08 (d, J = 7.5 Hz, 4H), 2.38 (s, 6H).

[0149] The present application also provides a method for preparing SAM13, specifically:

[0150] Step 1: Compound 24 (1 mmol), compound 27 (1.1 mmol), tetrakis(triphenylphosphine palladium (0)), potassium carbonate aqueous solution (2 M, 5 mL), and toluene (10 mL) were mixed and heated at 110 degrees Celsius for 48 hours under nitrogen protection. The product compound 28 was separated by silica gel chromatography column with a yield of 75%. 1 H NMR (400MHz, DMSO-d6) δ7.98(d,J=7.5Hz,1H),7.84(d,J=7.5Hz,1H),7.49(d,J=7.5Hz,4H),7.37(d,J=7. 5Hz,2H),7.08(d,J=7.5Hz,4H),6.99(d,J=7.5Hz,2H),4.35-4.29(m,2H),2.38(s,6H),1.34-1.29(m,3H).

[0151] Step 2: Compound 28 (1 mmol) was dissolved in tetrahydrofuran (THF, 10 mL), and a 2M sodium hydroxide aqueous solution (NaOH aq, 10 mL) was added. After heating at 75 °C for 20 h, dilute hydrochloric acid was added to acidify the mixture. The precipitate was filtered and washed to obtain the product SAM13 with a yield of 79%. 1 H NMR (400MHz, DMSO-d6) δ13.40 (s, 1H), 8.03-7.98 (m, 2H), 7.49 (d, J = 7.5Hz, 4H), 7.37(d,J=7.5Hz,2H), 7.08(d,J=7.5Hz,4H), 6.99(d,J=7.5Hz,2H), 2.38(s,6H).

[0152] The present application also provides a method for preparing SAM14, specifically:

[0153] Step 1: Compound 8 (1 mmol), compound 29 (1.2 mmol), sodium tert-butoxide (t-BuONa, 1.2 mmol), tri-tert-butylphosphine (10% mmol), tris(dibenzylideneacetone)dipalladium(0) (Pd2dba3, 5% mmol), toluene (10 mL) were heated and stirred at 110 degrees Celsius under nitrogen protection for 12 hours. After the reaction, the solvent was removed and purified by silica gel chromatography to obtain compound 30 with a yield of 61%. 1 H NMR (400MHz, DMSO-d6) δ7.48 (d, J = 7.5 Hz, 4H), 7.29-7.23 (m, 1H), 7.08 (d, J = 7. 5Hz,4H),6.88-6.82(m,1H),3.63-3.60(m,2H),2.93-2.90(m,2H),2.38(s,6H).

[0154] Step 2: Compound 30 (0.8 mmol) and triethyl phosphite (P(OEt)3, 10 mL) were mixed and heated at 180 degrees Celsius for 12 hours under nitrogen protection. The triethyl phosphite was removed by vacuum distillation. The crude product was mixed with tributylsilyl bromide (TMSBr, 0.72 mmol) and 1,4-dioxane (5 mL). The mixture was stirred at room temperature for 20 hours under nitrogen protection and the solvent was removed. Methanol (5 mL) was added and stirred for 12 hours. Deionized water (1 mL) was added to precipitate a solid powder, which was filtered and washed to obtain SAM14 with a yield of 79%. 1H NMR (400MHz, DMSO-d6) δ7.48 (d, J = 7.5 Hz, 4H), 7.29-7.23 (m, 1H), 7.08 (d, J = 7. 5Hz,4H),6.88-6.82(m,1H),3.63-3.60(m,2H),2.38(s,6H),2.03-2.00(m,2H).

[0155] The present application also provides a method for preparing SAM15, specifically:

[0156] Step 1: Compound 24 (1 mmol), compound 31 (1.1 mmol), tetrakis(triphenylphosphine palladium (0)), potassium carbonate aqueous solution (2 M, 5 mL), and toluene (10 mL) were mixed and heated at 110 degrees Celsius for 48 hours under nitrogen protection. The product compound 32 was separated by silica gel chromatography column with a yield of 76%. 1H NMR (400MHz, DMSO-d6) δ8.21(s,2H),8.02(d,J=7.5Hz,2H),7.80-7.72(m,6H),7.55(d,J=7.5Hz,2H),7.49(d, J=7.5Hz,4H),7.37(d,J=7.5Hz,2H),7.08(d,J=7.5Hz,4H),4.33-4.29(m,2H),2.38(s,6H),1.30-1.26(m,3H).

[0157] Step 2: Compound 32 (1 mmol) was dissolved in tetrahydrofuran (THF, 10 mL), and sodium hydroxide aqueous solution (NaOH aq, 2 M, 10 mL) was added. After heating at 75 °C for 20 h, dilute hydrochloric acid was added to acidify the solution. The precipitate was filtered and washed to obtain the product SAM15 with a yield of 79%. 1 H NMR (400MHz, DMSO-d6) δ12.71 (s, 1H), 8.21 (s, 2H), 8.02 (d, J = 7.5Hz, 2H), 7.85-7.80(m,4H),7.67(d,J=7.5Hz,2H),7.55(d,J=7.5Hz,2H),7.49(d,J=7.5Hz,4H),7.37(d,J=7.5Hz,2H),7.08(d,J=7.5Hz,4H),2.38(s,6H).

[0158] The present application also provides a method for preparing SAM16, specifically:

[0159] Step 1: Compound 33 (1 mmol), compound 2 (8 mL), 50% potassium hydroxide aqueous solution (KOH (aq), 5 mL), and tetrabutylammonium bromide (TBAB, 5% mmol) were mixed and heated at 70 degrees Celsius for 20 hours under nitrogen protection. Compound 34 was obtained after separation by silica gel chromatography column with a yield of about 65%. 1 H NMR (400MHz, CDCl3) δ7.82-7.78(m,4H),7.54-7.51(m,2H),7.36-7.33(m,20H),4.18-4.14(m,2H),3.54-3.50(m,2H),1.83-1.72(m,4H).

[0160] Step 2: Compound 34 (0.8 mmol) and triethyl phosphite (P(OEt)3, 10 mL) were mixed and heated at 180 degrees Celsius for 12 hours under nitrogen protection. Triethyl phosphite was removed by vacuum distillation. The crude product was mixed with tributylsilyl bromide (TMSBr, 0.72 mmol) and 1,4-dioxane (5 mL). The mixture was stirred at room temperature for 20 hours under nitrogen protection and the solvent was removed. Methanol (5 mL) was added and stirred for 12 hours. Deionized water (1 mL) was added to precipitate a solid powder, which was filtered and washed to obtain SAM16 with a yield of about 59%. 1 H NMR (400MHz, DMSO-d6) δ7.82-7.78(m,4H),7.54-7.51(m,2H),7.36-7.33(m,20H),4.18-4.14(m,2H),1.74-1.66(m,4H),1.28-1.24(m,2H).

[0161] The present application also provides a method for preparing SAM17, specifically:

[0162] Step 1: Compound 35 (1 mmol), compound 2 (8 mL), 50% potassium hydroxide aqueous solution (KOH (aq), 5 mL), and tetrabutylammonium bromide (TBAB, 5% mmol) were mixed and heated at 70 degrees Celsius for 20 hours under nitrogen protection. Compound 36 was obtained after separation by silica gel chromatography column with a yield of about 65%. 1 H NMR (400MHz, CDCl3) δ7.82-7.78(m,4H),7.54-7.51(m,2H),4.18-4.14(m,2H),3.54-3.50(m,2H),1.83-1.72(m,4H),0.92(s,6H).

[0163] Step 2: Compound 36 (0.8 mmol) and triethyl phosphite (P(OEt)3, 10 mL) were mixed and heated at 180 degrees Celsius for 12 hours under nitrogen protection. Triethyl phosphite was removed by vacuum distillation. The crude product was mixed with tributylsilyl bromide (TMSBr, 0.72 mmol) and 1,4-dioxane (5 mL). The mixture was stirred at room temperature for 20 hours under nitrogen protection and the solvent was removed. Methanol (5 mL) was added and stirred for 12 hours. Deionized water (1 mL) was added to precipitate a solid powder, which was filtered and washed to obtain SAM17 with a yield of about 59%. 1H NMR(400MHz,DMSO-d6)δ7.82-7.78(m,4H),7.54-7.51(m,2H),7.36-7.33(m, 20H),4.18-4.14(m,2H),1.74-1.66(m,4H),1.28-1.24(m,2H),0.92(s,6H).

[0164] The preparation methods of the above-mentioned SAM1 to SAM17 provided in the embodiments of the present application have low cost and high yield.

[0165] The self-assembly material provided in the embodiment of the present application includes a first self-assembly molecular material and a second self-assembly molecular material. The first self-assembly molecular material is the first self-assembly molecular material introduced in the above embodiment and will not be described in detail. The second self-assembly molecular material includes at least one of an oxygen atom and a nitrogen atom containing unbonded lone pairs of electrons; it can be understood that the second self-assembly molecular material can be understood as a self-assembly material commonly used in the prior art. Passivation of the lead atoms of the perovskite by using a self-assembly material formed by mixing the first self-assembly molecular material and the second self-assembly molecular material can achieve a better passivation effect, which is beneficial to improving the photoelectric conversion efficiency and stability of the solar cell 100. The perovskite battery has a larger open circuit voltage, short-circuit current density and fill factor, higher photoelectric conversion efficiency and better stability.

[0166] In one embodiment, the second self-assembling molecular material is any one of the following compounds M1 to M4:

[0167] In one embodiment, the first self-assembling molecular material accounts for 20%-80% of the self-assembling material. Optionally, in the self-assembling material, the second self-assembling molecular material is the main component, and the first self-assembling molecular material is used as an additive. Adding a small amount of the first self-assembling molecular material to the second self-assembling molecular material is beneficial to improving the passivation effect and having a higher photoelectric conversion efficiency. Optionally, in the self-assembling material, the first self-assembling molecular material is the main component, and the second self-assembling molecular material is used as an additive. Adding a small amount of the second self-assembling molecular material to the first self-assembling molecular material is beneficial to improving the passivation effect and having a higher photoelectric conversion efficiency.

[0168] It should be noted that the second self-assembling molecular material in the self-assembling material provided in the embodiment of the present application is an optional material, that is, the self-assembling material provided in the embodiment of the present application may only include the first self-assembling molecular material, and the specific design is based on needs.

[0169] In one embodiment, the hole transport layer includes the self-assembly material provided in the examples of the present application.

[0170] Optionally, the hole transport layer only includes self-assembly materials, and the self-assembly materials form a hole transport layer. As a hole transport material, the self-assembly material realizes hole transport while passivating the interface defects of the light absorption layer, which can reduce the film structure of the solar cell and reduce the thickness, so that the solar cell has a higher photoelectric conversion efficiency and better stability. In a specific implementation, the thickness of the hole transport layer formed by the self-assembly material is 0.1nm-5nm, and it has good self-assembly performance; a molecular size of the self-assembly material is greater than or equal to 0.1nm, and the thickness is less than 0.1nm, and it may not be able to form a continuous film structure; the thickness is greater than 5nm, which affects the self-assembly performance. The thickness of the hole transport layer formed by the self-assembly material is 0.1nm-5nm, the specific surface area is large, the utilization rate of the coordination atoms is high (that is, each site is used for coordination as much as possible), and it has a good passivation effect and self-assembly performance. Exemplarily, the thickness of the hole transport layer formed by the self-assembled material is 0.1 nm, 0.5 nm, 1 nm, 1.5 nm, 2.0 nm, 2.5 nm, 3.0 nm, 3.5 nm, 4.0 nm, 4.5 nm, 5.0 nm, or a range consisting of any two of the above values, for example, 0.5 nm-4 nm, 1.0 nm-5 nm, etc.

[0171] Optionally, the hole transport layer includes a self-assembled material and a metal oxide, wherein the self-assembled material is attached to the surface of the metal oxide. The metal oxide includes, but is not limited to, at least one of nickel oxide, molybdenum oxide, and tungsten oxide. In other words, the hole transport layer includes a mixture of the self-assembled material and the metal oxide. The self-assembled material can not only passivate the interface defects of the light absorption layer, but also reduce the entry of metal ions into the light absorption layer to reduce the degradation of the light absorption layer, thereby enabling the solar cell to have a higher open circuit voltage, short-circuit current density, and fill factor, thereby improving the photoelectric conversion efficiency and stability of the solar cell.

[0172] Optionally, the hole transport layer includes a self-assembly material layer and a metal oxide layer arranged in a stacked manner, and the self-assembly material layer is arranged on the side of the metal oxide layer close to the light absorption layer 13. The self-assembly material layer includes a self-assembly material. The metal oxide layer includes a metal oxide. While the self-assembly material can passivate the interface defects of the light absorption layer, it can also reduce the entry of metal ions into the light absorption layer to reduce the degradation of the light absorption layer, which is beneficial to improving the photoelectric conversion efficiency and stability of the solar cell. In one specific implementation, the thickness of the metal oxide layer is 10nm-100nm, which can achieve a good hole transport effect. In one specific implementation, the metal oxide includes but is not limited to at least one of nickel oxide, molybdenum oxide, and tungsten oxide. In one specific implementation, the thickness of the self-assembly material layer is 0.1nm-5nm, the specific surface area is large, the utilization rate of the coordination atoms is high, and it has a good passivation effect and self-assembly performance. Exemplarily, the thickness of the self-assembled material layer is 0.1 nm, 0.5 nm, 1 nm, 1.5 nm, 2.0 nm, 2.5 nm, 3.0 nm, 3.5 nm, 4.0 nm, 4.5 nm, 5.0 nm, or a range consisting of any two of the above values, for example, 0.5 nm-4 nm, 1.0 nm-5 nm, etc.

[0173] In one embodiment, the material of the passivation layer includes the self-assembled material described in the examples of this application. The self-assembled material can serve as an independent passivation layer to passivate the low-coordinated lead vacancies in the light-absorbing layer, reduce defects on the interface of the light-absorbing layer, and thus enable the solar cell to have higher photoelectric conversion efficiency and better stability. It should be noted that the material of the hole transport layer in this case can include the self-assembled material or a material known in the prior art.

[0174] Optionally, the thickness of the passivation layer formed by the self-assembly material provided in the embodiment of the present application is 0.1nm-5nm, which has a large specific surface area, a high utilization rate of the coordinated atoms, and good passivation effect and self-assembly performance. Exemplarily, the thickness of the passivation layer formed by the self-assembly material is 0.1nm, 0.5nm, 1nm, 1.5nm, 2.0nm, 2.5nm, 3.0nm, 3.5nm, 4.0nm, 4.5nm, 5.0nm, or a range consisting of any two of the above values, for example, 0.5nm-4nm, 1.0nm-5nm, etc.

[0175] It should be noted that the hole transport layer includes a self-assembly material, or the passivation layer provided between the hole transport layer and the light absorption layer 13 includes a self-assembly material, so that the solar cell includes a self-assembly material.

[0176] In the case where the hole transport layer of the solar cell 100 includes the above-mentioned self-assembly material (in this case, the hole transport layer only includes the self-assembly material, or the hole transport layer includes a metal oxide and a self-assembly material attached to the surface of the metal oxide, or the hole transport layer includes a metal oxide layer and a self-assembly material layer stacked), the self-assembly material can be directly dissolved in an organic solvent and covered on the surface of the first electrode 11 or the metal oxide by spin coating, spraying, scraping, slit coating or roll-to-roll printing, or the first electrode 11 or the metal oxide surface is immersed in a self-assembly material solution, and the solute molecules in the self-assembly material solution self-assemble on the surface of the first electrode 11 or the metal oxide to form a monomolecular film. The solvent for dissolving the self-assembly material can be at least one of methanol, isopropanol, ethanol, and chlorobenzene, with a concentration of 0.1 mg / mL-10 mg / mL. After the self-assembly material is prepared on the surface of the first electrode 11 or the metal oxide, the solvent can be removed by annealing or vacuum.

[0177] The method for preparing the solar cell 100 in the case where the self-assembled material is used as the hole transport layer (ie, the hole transport layer only includes the self-assembled material) is as follows:

[0178] Step 1: Etch and clean the transparent electrode substrate, dry it for later use, and form the first electrode 11.

[0179] Step 2: Cover the self-assembled material on a clean transparent electrode substrate and remove the solvent by annealing or vacuum to obtain a self-assembled monolayer, forming a hole transport layer (i.e., the first transport layer 12). Optionally, the self-assembled material includes a first self-assembled molecular material. Optionally, the self-assembled material includes a first self-assembled molecular material and a second self-assembled molecular material.

[0180] Step 3: Prepare a perovskite light absorbing layer on the self-assembled monolayer and set aside to form a light absorbing layer 13 .

[0181] Step 4: a blocking layer 16 and an electron transport layer (ie, the second transport layer 14 ) are sequentially prepared on the perovskite light absorbing layer and set aside.

[0182] Step 5: Prepare an electrode layer on the electron transport layer to form a second electrode 15, and perform edge cleaning test.

[0183] The method for preparing the solar cell 100 in which the self-assembled material is attached to the metal oxide and serves as a hole transport layer (i.e., the hole transport layer includes the metal oxide and the self-assembled material attached to the surface of the metal oxide) is as follows:

[0184] Step 1: Etch and clean the transparent electrode substrate, dry it for later use, and form the first electrode 11.

[0185] Step 2: Covering a clean transparent electrode substrate with a metal oxide to obtain a metal oxide film; optionally, the metal oxide is NiO x .

[0186] Step 3: Cover the above self-assembled material on NiO x On the substrate, the solvent is removed by annealing or vacuum to obtain a self-assembled monolayer, forming a hole transport layer (i.e., the first transport layer 12). Optionally, the self-assembled material includes a first self-assembled molecular material. Optionally, the self-assembled material includes a first self-assembled molecular material and a second self-assembled molecular material.

[0187] Step 4: Prepare a perovskite light absorbing layer on the self-assembled monolayer and set aside to form a light absorbing layer 13 .

[0188] Step 5: a blocking layer 16 and an electron transport layer (ie, a second transport layer 14 ) are sequentially prepared on the perovskite light absorbing layer and set aside.

[0189] Step 6: Prepare an electrode layer on the electron transport layer to form a second electrode 15, and perform edge cleaning test.

[0190] The present application also provides an electrical device, which is a common device including the solar cell of the present application, such as those used in the fields of communications, transportation, industry and agriculture, and lighting. Examples of the electrical device include satellites, communications equipment, traffic lights, lighthouses, wireless telephone booths, drilling monitoring equipment, power systems, camping lights, electric vehicles, and electronic device chargers.

[0191] The beneficial effects of the present application are further illustrated below with reference to the examples.

[0192] In order to make the technical problems, technical solutions and beneficial effects solved by the embodiments of the present application clearer, the following will be further described in detail with reference to the embodiments. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. The following description of at least one exemplary embodiment is actually only illustrative and is in no way intended to limit the present application and its applications. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0193] Example 1:

[0194] (1) FTO conductive glass cleaning

[0195] Twenty sheets of 2.0 × 2.0 cm FTO conductive glass were taken and laser-etched to remove 0.35 cm of FTO from each end, exposing the glass substrate. The etched FTO glass was ultrasonically cleaned several times with water, acetone, and isopropyl alcohol. The solvent was blown off with a nitrogen gun and the glass was then further cleaned in a UV ozone chamber.

[0196] (2) Preparation of hole transport layer

[0197] A methanol solution of nano-nickel oxide (10 mg / mL) was spin-coated at 2000 rpm onto a FTO conductive glass surface. The solvent was removed by vacuum or annealing to form a nickel oxide film. The self-assembly material SAM1 was dissolved in methanol to obtain a self-assembly material solution. The self-assembly material was then spin-coated onto the nickel oxide film at 3000 rpm and vacuumed or annealed to obtain a self-assembly material layer.

[0198] (3) Preparation of perovskite layer

[0199] Lead iodide (726 mg), iodomethane (240 mg), cesium iodide (19 mg), and lead bromide (11 mg) were weighed and dissolved in 1 mL of a mixed solution of DMF and DMSO (4:1), stirred for 3 h, and filtered with a 0.22 μm organic filter membrane to obtain a perovskite precursor solution. The perovskite precursor solution was spin-coated on the obtained self-assembled material layer at 3000 rpm / s, annealed at 100°C for 30 min, and cooled to room temperature. The active material of the perovskite absorption layer was a CsFA system.

[0200] (4) Preparation of PC 61 BM electron transport layer, barrier layer 16 and Cu electrode

[0201] The electron transport layer PC was spin-coated on the perovskite layer at 1500 rpm / s 61 BM (20 mg / mL chlorobenzene solution) was annealed at 100° C. for 10 min, followed by spin coating of a barrier layer 16 (BCP saturated isopropyl alcohol solution) at 5000 rpm / s. The obtained wafer was placed in an evaporation machine for evaporation of metal electrodes Cu.

[0202] The preparation process of Comparative Examples 1 to 2 and Examples 2 to 17 is similar to that of Example 1, except that the self-assembly materials are different, as shown in Table 1. The preparation process of Example 18 is similar to that of Example 1, except that no nickel oxide film is formed during the preparation of the hole transport layer, and the self-assembly material is directly spread on the FTO surface. The preparation process of Example 19 is similar to that of Example 1, except that the self-assembly material in Example 19 is a mixture of SAM1 and M1 (mass ratio 1:1), which are dissolved in methanol.

[0203] The relevant parameter testing process of the examples and comparative examples of the present application is as follows:

[0204] (1) IV measurement method:

[0205] A Guangyan solar simulator was used for testing, following the national standard IEC61215. Crystalline silicon solar cells were used to calibrate the light intensity to achieve the intensity of one sun, AM 1.5. Sample cells were connected to a digital source meter and their photoelectric conversion efficiency was measured under illumination. The optimal photoelectric conversion efficiency refers to the photoelectric conversion efficiency achieved after the solar cell has been manufactured and aged. AM 1.5 is the solar spectrum per unit area in the direction of incidence when the actual distance sunlight travels through the atmosphere is 1.5 times the vertical thickness of the atmosphere.

[0206] As can be seen from Table 1, the photoelectric conversion efficiency and stability of the solar cell are significantly improved by using the self-assembly material provided in the examples of the present application, compared with Comparative Example 1 (no self-assembly material) and Comparative Example 2 (using the self-assembly material in the prior art).

[0207] The above description is only an implementation method of the present application and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the description and drawings of this application, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A solar cell, characterized in that: The solar cell comprises a light absorbing layer and a passivation layer located on one side of the light absorbing layer, and the passivation layer comprises a self-assembly material; or, The solar cell comprises a light absorbing layer and a hole transport layer located on one side of the light absorbing layer, wherein the hole transport layer comprises the self-assembly material; Wherein, the self-assembling material comprises a first self-assembling molecular material, and the structural formula of the first self-assembling molecular material is Wherein, Ar represents an aromatic group, Ar includes at least one coordinating atom, the coordinating atom includes an unbonded lone pair of electrons, and the coordinating atom includes one or more of a phosphorus atom, an arsenic atom, a sulfur atom, and a selenium atom; L includes one or more of a carbon-containing group, a nitrogen-containing group, an oxygen-containing group, a silicon-containing group, a phosphorus-containing group, and a sulfur-containing group, and the value of n is 0-10; A includes a hydrophilic group.

2. The solar cell according to claim 1, wherein: Ar includes two or more of the above-mentioned coordinating atoms.

3. The solar cell according to claim 1 or 2, wherein: Ar is any one of the following Ar1 to Ar12: wherein X1 to X5 are selected from any one of -CR"2-, -NR"-, -O-, -SiR"2-, -PR"-, -S-, -As-, -Se-, -C(=O)-, -C(=S)-, -C(=NR")-, -C(=CR"2)-, and m is 1-3; R1 to R 143 and R" are independently selected from any one of hydrogen, halogen, -OR', -OCOR', -NHCOR', -NR'2, R', halogen-substituted R', -SR', -PR'2, -AsR'2, -Se-; R' is any one of a substituted or unsubstituted phenyl group, a thienyl group, and a C1-C5 alkyl group.

4. The solar cell according to claim 3, wherein: When Ar is Ar1, at least one of R1 to R8 is selected from -PR'2, -SR', -AsR'2, -Se-; and / or, In the case where Ar is Ar2, R9 to R 18 At least one of them is selected from -PR'2, -SR', -AsR'2, -Se-; and / or, When Ar is Ar3, R 19 To R 30 At least one of them is selected from -PR'2, -SR', -AsR'2, -Se-; and / or, When Ar is Ar4, R 31 To R 44 At least one of them is selected from -PR'2, -SR', -AsR'2, -Se-; and / or, When Ar is Ar5, R 45 To R 60 At least one of them is selected from -PR'2, -SR', -AsR'2, -Se-; and / or, When Ar is Ar6, R 61 To R 78 At least one of them is selected from -PR'2, -SR', -AsR'2, -Se-; and / or, When Ar is Ar10 and X1 does not contain phosphorus, sulfur, arsenic or selenium, R 127 To R 134 At least one of them is selected from -PR'2, -SR', -AsR'2, -Se-; and / or, When Ar is Ar11, and X2 to X3 do not contain phosphorus, sulfur, arsenic, or selenium, R 135 To R 138 At least one of them is selected from -PR'2, -SR', -AsR'2, -Se-; and / or, When Ar is Ar12, and X4 to X5 do not contain phosphorus, sulfur, arsenic, or selenium, R 139 To R 143 At least one of them is selected from -PR'2, -SR', -AsR'2, and -Se-.

5. The solar cell according to claim 3 or 4, wherein: When Ar is Ar1, at least two of R1 to R8 are selected from -PR'2, -SR', -AsR'2, -Se-; and / or, In the case where Ar is Ar2, R9 to R 18 At least two of them are selected from one of -PR'2, -SR', -AsR'2, -Se-; and / or, When Ar is Ar3, R 19 To R 30 At least two of them are selected from one of -PR'2, -SR', -AsR'2, -Se-; and / or, When Ar is Ar4, R 31 To R 44 At least two of them are selected from one of -PR'2, -SR', -AsR'2, -Se-; and / or, When Ar is Ar5, R 45 To R 60 At least two of them are selected from one of -PR'2, -SR', -AsR'2, -Se-; and / or, When Ar is Ar6, R 61 To R 78 At least two of them are selected from one of -PR'2, -SR', -AsR'2, -Se-; and / or, When Ar is Ar7, R 79 To R 92 At least one of -PR'2, -SR', -AsR'2, -Se- is selected from one of them; and / or, When Ar is Ar8, R 93 To R 108 At least one of -PR'2, -SR', -AsR'2, -Se- is selected from one of them; and / or, When Ar is Ar9, R 109 To R 126 At least one of -PR'2, -SR', -AsR'2, -Se- is selected from one of them; and / or, When Ar is Ar10 and X1 does not contain phosphorus, sulfur, arsenic, or selenium, R 127 To R 134 At least two of them are selected from -PR'2, -SR', -AsR'2, -Se-; or when Ar is Ar10 and X1 contains one of phosphorus, sulfur, arsenic, and selenium groups, R 127 To R 134 At least one of -PR'2, -SR', -AsR'2, -Se- is selected from one of them; and / or, When Ar is Ar11 and X2 to X3 do not contain phosphorus, sulfur, arsenic, or selenium, R 135 To R 138 At least two of them are selected from -PR'2, -SR', -AsR'2, -Se-; or when Ar is Ar11 and X2 to X3 contain one of phosphorus, sulfur, arsenic, and selenium groups, R 135 To R 138 At least one of -PR'2, -SR', -AsR'2, -Se- is selected from one of them; and / or, When Ar is Ar12 and X4 to X5 do not contain phosphorus, sulfur, arsenic, or selenium, R 139 To R 143 At least two of them are selected from -PR'2, -SR', -AsR'2, -Se-; or when Ar is Ar12 and X4 to X5 contain one of phosphorus, sulfur, arsenic, and selenium groups, R 139 To R 143 At least one of them is selected from -PR'2, -SR', -AsR'2, and -Se-.

6. The solar cell according to any one of claims 1 to 5, wherein: The hydrophilic group includes one or more oxoacid groups.

7. The solar cell according to claim 6, wherein: The oxygen acid groups include -COOH, salts corresponding to -COOH, -PO(OH)2, salts corresponding to -PO(OH)2, -PHO(OH), salts corresponding to -PHO(OH), -SO2(OH), salts corresponding to -SO2(OH), -B(OH) 2、 Any of the salts corresponding to -B(OH)2.

8. The solar cell according to any one of claims 1 to 7, wherein: L is -CR"2-, -NR"-, -O-, -SiR"2-, -PR"-, -S-, -C(=O)-, -C(=S)-, -C(=NR")-, -C(=CR"2)-, and at least one of the following L1 to L8; Among them, Z1 to Z 40 Each independently selected from =CR”-, =N-; X6 to X 11 Any one selected from -CR"2-, -NR"-, -O-, -SiR"2-, -PR"-, -S-, -As-, -Se-, -C(=O)-, -C(=S)-, -C(=NR")-, -C(=CR"2)-; R" is selected from any one of hydrogen, halogen, -OR', -OCOR', -NHCOR', -NR'2, R', halogen-substituted R', -SR', -PR'2, -AsR'2, -Se-; R' is any one of a substituted or unsubstituted phenyl group, a thienyl group, and a C1-C5 alkyl group.

9. The solar cell according to claim 1, wherein: The first self-assembling molecular material is selected from any one of SAM1 to SAM17:

10. The solar cell according to any one of claims 1 to 9, wherein: The invention also includes a second self-assembling molecular material, wherein the second self-assembling molecular material includes at least one of oxygen atoms and nitrogen atoms containing unbonded lone pairs of electrons.

11. The solar cell according to any one of claims 10, wherein: The second self-assembling molecular material is selected from any one of the following compounds M1 to M4:

12. The solar cell according to any one of claims 1 to 11, wherein: The hole transport layer also includes a metal oxide.

13. The solar cell according to claim 12, wherein: The self-assembling material is attached to the surface of the metal oxide.

14. The solar cell according to any one of claims 1 to 13, wherein: The hole transport layer comprises a self-assembly material layer and a metal oxide layer which are stacked, wherein the self-assembly material layer comprises the self-assembly material, and the metal oxide layer comprises a metal oxide.

15. The solar cell according to claim 14, wherein: The thickness of the self-assembly material layer is 0.1nm-5nm.

16. The solar cell according to claim 14 or 15, wherein: The metal oxide includes at least one of nickel oxide, molybdenum oxide and tungsten oxide; and / or the thickness of the metal oxide layer is 10-100 nm.

17. The solar cell according to any one of claims 1 to 16, wherein: The light absorption layer includes a perovskite material, the chemical formula of the perovskite material is ABX3 or A2CDX6, wherein A is at least one of MA, FA, and Cs, B is at least one of Pb and Sn, C is Ag+, and D is Bi 3+ , Sb 3+ 、In 3+ At least one of, X is at least one of Br and I.

18. The solar cell according to any one of claims 1 to 17, wherein: The band gap of the light absorbing layer is 1.20 eV-2.30 eV; and / or the thickness of the light absorbing layer is 200 nm-1000 nm.

19. The solar cell according to any one of claims 1 to 18, wherein: It also includes an electron transport layer, a blocking layer and a second electrode arranged on one side of the light absorbing layer, and a first electrode arranged on the other side of the light absorbing layer, wherein the blocking layer is located between the electron transport layer and the second electrode.

20. The solar cell according to claim 19, wherein The electron transport layer includes [6,6]-phenyl-C 61 -Butyric acid methyl ester, [6,6]-phenyl-C 71 - at least one of methyl butyrate, fullerene C60, fullerene C70, tin dioxide, zinc oxide, perylene imide materials, and naphthylimide materials, and / or the thickness of the electron transport layer is 5nm-100nm.

21. The solar cell according to claim 19 or 20, wherein: The barrier layer includes 2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline, SnO2, ZnO, CeO x At least one of the above, and / or the thickness of the barrier layer is 0.5nm-20nm.

22. The solar cell according to any one of claims 19 to 21, wherein: The second electrode includes at least one of Ag, Cu, C, Au, Al, ITO, AZO, BZO, and IZO, and / or the thickness of the second electrode is 10 nm-1000 nm.

23. The solar cell according to any one of claims 19 to 22, wherein: The first electrode includes at least one of FTO, ITO, AZO, BZO, and IZO, and / or the thickness of the first electrode is 10 nm-1000 nm.

24. A self-assembling material, wherein: The self-assembly material comprises a first self-assembly molecular material, the structural formula of which is Wherein, Ar represents an aromatic group, Ar includes at least one coordinating atom, the coordinating atom includes an unbonded lone pair of electrons, and the coordinating atom includes one or more of a phosphorus atom, an arsenic atom, a sulfur atom, and a selenium atom; L includes one or more of a carbon-containing group, a nitrogen-containing group, an oxygen-containing group, a silicon-containing group, a phosphorus-containing group, and a sulfur-containing group, and the value of n is 0-10; A includes a hydrophilic group.

25. An electrical device, wherein: A solar cell comprising the solar cell according to any one of claims 1 to 23.

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