Method for producing a composite structure for microelectronics, optics or optoelectronics

Abstract

The present invention relates to a method for producing a composite structure, the method comprising: (a) forming a temporary substrate (3') comprising a carrier substrate (3), wherein a plurality of tile portions (P'1-P'3) or a layer of interest (20) made of a first material are arranged on the carrier substrate (3); (b) forming a removable interface (5) arranged between the carrier substrate (3) and the tile portions or the layer of interest, or in or on the tile portions or the layer of interest; (c) assembling the temporary substrate (3') with a receiver substrate (4) made of a second material that is different from the first material, via the tile portions or the layer of interest; and (d) removing the carrier substrate (3) by dismantling the removable interface (5) so as to transfer at least one portion of the tile portions (P'1-P'3) or of the layer of interest (20) to the receiver substrate (4) to form the composite structure.

Description

[0001] METHOD FOR MANUFACTURING A COMPOSITE STRUCTURE FOR MICROELECTRONICS, OPTICS OR OPTOELECTRONICS

[0002] TECHNICAL FIELD

[0003] The invention relates to a method for manufacturing a composite structure for microelectronics, optics or optoelectronics.

[0004] STATE OF THE ART

[0005] In the field of microelectronics, optics or optoelectronics, the design of multilayer structures sometimes requires transferring tiles in the form of portions of a layer from a donor substrate to a support substrate or receiving substrate.

[0006] This type of process is generally referred to as a paving process, and involves a partial transfer of a layer taken from the donor substrate to form one or more paving stones arranged in a predetermined pattern or location on the supporting substrate.

[0007] Such tiling may be made necessary by a size difference between the donor substrate and the support substrate. Indeed, due to this size difference, it is not possible to transfer a layer of the donor substrate covering the entire surface of the support substrate.

[0008] A well-known layer transfer method is the Smart Cut™ method, in which an embrittlement zone is formed by implantation of atomic species into the donor substrate, delimiting the layer to be transferred, the donor substrate is bonded to the support substrate, and the donor substrate is detached along the embrittlement zone to transfer the layer from the donor substrate to the support substrate. However, this method assumes that the donor substrate and the support substrate are of identical size.

[0009] However, while silicon substrates are available with a relatively large size, typically a diameter of 300 mm, other materials of interest currently only exist in the form of bulk substrates of smaller size, for example 100 or 150 mm in diameter. Furthermore, these materials of interest are sometimes particularly expensive, so it is desirable to minimize any waste formed during transfer.This is particularly the case for III-V semiconductor materials, including nitrides (e.g., for binary compounds, indium nitride (InN), gallium nitride (GaN) and aluminum nitride (AIN)), arsenides (e.g., for binary compounds, indium arsenide (InAs), gallium arsenide (GaAs) and aluminum arsenide (AlAs)), and phosphides (e.g., for binary compounds, indium phosphide (InP), gallium phosphide (GaP) and aluminum phosphide (AlP)).

[0010] Instead of transferring an entire layer of the donor substrate, a solution based on the Smart Cut™ process consists of removing one or more tiles from at least one donor substrate and transferring said tiles to an intermediate support, to form a so-called pseudo-donor substrate, forming by implantation of atomic species a weakening zone in each tile, bonding the pseudo-donor substrate to a receiving substrate via the tiles, and detaching each tile along the weakening zone so as to transfer a portion of each tile to the receiving substrate. The intermediate substrate and the receiving substrate have an identical size.

[0011] However, in some cases, the material of the tile portions and the material of the receiving substrate must be subjected to different and incompatible process steps. For example, if the material of the tile portions is a III-V material such as InP and the material of the receiving substrate is silicon, the tile portions are intended to receive one or more additional layers of III-V materials formed by epitaxy, while the receiving substrate is intended to form electronic circuit elements according to a CMOS process (acronym for the English term "Complementary Metal Oxide Semiconductor").

[0012] However, a CMOS manufacturing line is not suitable for including epitaxy of III-V materials, in particular due to the risks of contamination of the line by III-V materials.

[0013] Document US 2011 / 0244613 describes a method for manufacturing a structure comprising a silicon substrate comprising a photonic component, such as a waveguide or a modulator, and InP-based tiles supporting a laser structure. The tiles are first formed on a support substrate and then portions of the tiles are transferred from the support substrate to the silicon receiving substrate comprising the photonic component. However, this transfer, which is based on the Smart Cut™ process, poses several problems.

[0014] In some embodiments, hydrogen implantation is performed in the tiles arranged on the support substrate, so as to form a weakened zone therein. Consequently, the implanted hydrogen must pass through the laser structure located at the top of the tiles, which risks damaging it. Furthermore, depending on the thickness of the laser structure, it may be difficult to achieve the desired implantation depth with industrially available implantation devices.

[0015] In other embodiments, hydrogen implantation is performed in an InP donor substrate before cutting the tiles, from the face opposite the face on which the laser structure is formed, so as to prevent the implanted hydrogen from passing through the laser structure. However, this method results in a loss of a large quantity of InP. Indeed, on the one hand, the donor substrate can only be used once to form the tiles, the residual thickness after assembly of the tiles on the support substrate not allowing new tiles to be formed; on the other hand, after transfer of the tile portions from the support substrate to the receiving substrate, a significant thickness of InP, which is not part of the laser structure, is removed by chemical or plasma etching. Given the cost of InP, this method is therefore very expensive.

[0016] The problem of lack of compatibility between two parts of the composite structure also arises when the said structure includes, instead of the paving stones, a continuous layer of the first material.

[0017] BRIEF DESCRIPTION OF THE INVENTION

[0018] An aim of the invention is therefore to design a method for manufacturing, from a temporary substrate comprising a layer or blocks of interest, a structure comprising a receiving substrate on which portions of said layer or blocks of interest extend, said structure being composite in the sense that it combines, for the receiving substrate and the portions of layer or blocks of interest, materials undergoing different and mutually incompatible treatments, under conditions which make it possible to minimize damage to the blocks or said layer of interest and to optimize the recycling of the temporary substrate.

[0019] An object of the invention relates to a method for manufacturing a composite structure comprising portions of paving stones or a layer of interest. In the case of paving stones, said method comprises:

[0020] (a) forming a temporary substrate comprising a support substrate and a plurality of paving portions of a first material disposed on the support substrate, wherein forming said temporary substrate comprises:

[0021] (i) removing a plurality of tiles from at least one donor substrate and placing each tile on an intermediate substrate, each donor substrate having a diameter less than the diameter of the intermediate substrate,

[0022] (ii) the formation of a weakening zone in each block by implantation of atomic species, so as to delimit a portion of block to be transferred,

[0023] (iii) bonding the intermediate substrate to the support substrate by means of the blocks, and

[0024] (iv) detaching the paving stones along the weakened zone, so as to transfer the paving stone portions onto the supporting substrate, (b) forming a removable interface arranged between the supporting substrate and the paving stone portions, or in or on the paving stone portions,

[0025] (c) assembling the temporary substrate with a receiving substrate made of a second material different from the first material by means of said paving portions, and

[0026] (d) removing the support substrate by dismantling the removable interface so as to transfer at least part of the paving stone portions onto the receiving substrate to form the composite structure.

[0027] In the case of the layer of interest, the method comprises:

[0028] (a) forming a temporary substrate comprising a support substrate and a layer of interest of a first material disposed on the support substrate, the formation of said temporary substrate comprising:

[0029] (i) the provision of a donor substrate,

[0030] (ii) the formation of a weakening zone in the donor substrate by implantation of atomic species so as to delimit a layer of interest to be transferred,

[0031] (iii) bonding the donor substrate to the support substrate via the layer of interest, and

[0032] (iv) detachment of the donor substrate along the weakening zone so as to transfer the layer of interest onto the support substrate,

[0033] (b) forming a removable interface arranged between the support substrate and the layer of interest, or in or on said layer of interest,

[0034] (c) assembling the temporary substrate with a receiving substrate made of a second material different from the first material via the layer of interest, and

[0035] (d) removing the support substrate by dismantling the removable interface so as to transfer at least part of the layer of interest onto the receiving substrate (4) to form the composite structure.

[0036] The term "removable interface" excludes the case of a weakening zone formed by the implantation of atomic species.

[0037] By "assembly via the paving stone portions (or the layer of interest)" is meant in this text that the assembly of the temporary substrate on the receiving substrate is done with the paving stone portions (or the layer of interest) oriented towards the receiving substrate (the support substrate being located on the side of the paving stone portions or the layer of interest opposite the receiving substrate). This does not imply direct contact of the paving stone portions (or the layer of interest) and the receiving substrate. Thus, if, as explained below, additional layers have been formed on the paving stone portions or the layer of interest as part of one or more treatments of the paving stone portions or the layer of interest before the assembly step, it is the layer located on the free surface of the paving stone portions or the layer of interest which is in contact with the receiving substrate.

[0038] The invention therefore makes it possible to delay as much as possible the assembly of two substrates which are not compatible with each other during the manufacture of the composite structure, in particular by avoiding treating the blocks or the layer of interest using processes which are incompatible with the material of the receiving substrate.

[0039] Furthermore, the entire intermediate substrate and the paving stones or layer of interest (or the remainder of the paving stones or layer of interest after transfer of a portion of the paving stones or layer of interest to the receiving substrate) lends itself to the formation of several temporary substrates, which minimizes the unit cost of said temporary substrates.

[0040] Particularly advantageously, the method comprises at least one step of treating the portions of paving stones or the layer of interest before assembling said portions of paving stones or said layer of interest on the receiving substrate.

[0041] Said processing may include:

[0042] - epitaxy of a layer of a third material on each tile or on the layer of interest,

[0043] - an engraving,

[0044] - a surface treatment,

[0045] - doping,

[0046] - heat treatment,

[0047] - the formation, in the temporary substrate, of channels or trenches for access of an etching agent to the removable interface, and / or

[0048] - the formation of an interconnection.

[0049] In certain embodiments, said step of treating the portions of paving stones or the layer of interest is carried out at a temperature greater than or equal to 500°C.

[0050] In some embodiments, the receiving substrate includes at least a portion of an electronic circuit formed prior to assembly of the temporary substrate and the receiving substrate.

[0051] The formation of said electronic circuit part can be carried out in particular by a CMOS process.

[0052] The method may comprise at least one step of finalizing the electronic circuit after transferring the portions of tiles or the layer of interest onto the receiving substrate. In this text, “finalization” means the assembly of the transistors, laser diodes and chip elements formed in the portions of tiles or the layer of interest and the receiving substrate to form electronic and / or optoelectronic components. These finalization steps are generally referred to as “back-end” in the field of microelectronics.

[0053] Particularly advantageously, each stage of finalization of the electronic circuit is carried out at a temperature below 500°C.

[0054] Said electronic circuit may advantageously comprise at least one transistor, in particular a field effect transistor, a CMOS transistor, a BiCMOS transistor or a bipolar transistor, and / or at least one diode, in particular a laser diode or a light-emitting diode (LED).

[0055] The first material is advantageously chosen from:

[0056] - III-V materials, such as indium nitride (InN), gallium nitride (GaN), aluminum nitride (AIN), indium arsenide (InAs), gallium arsenide (GaAs), aluminum arsenide (AlAs), indium phosphide (InP), gallium phosphide (GaP) or aluminum phosphide (AIP),

[0057] - piezoelectric materials, such as lithium tantalate (LiTaO3), lithium niobate (LiNbOa), potassium sodium niobate (KxNa1-xNbO3 or KNN), barium titanate (BaTiOa), quartz, lead zirconate titanate (PZT), a compound of lead magnesium niobate and lead titanate (PMN-PT), zinc oxide (ZnO), aluminum nitride (AIN) or aluminum scandium nitride (AIScN),

[0058] - germanium or silicon carbide, and

[0059] - an electrically insulating material such as diamond, strontium titanate, yttria zirconia or sapphire.

[0060] The third material can then be chosen from: III-V materials, piezoelectric materials, silicon carbide, silicon germanium (SiGe) and germanium.

[0061] The second material is preferably selected from silicon, germanium, silicon carbide and III-V materials, in particular gallium arsenide.

[0062] The support substrate advantageously comprises silicon, silicon carbide, in particular polycrystalline silicon carbide, or aluminum nitride, in particular polycrystalline aluminum nitride.

[0063] In some embodiments, the removable interface comprises a selective etching layer, a porous layer and / or a layer having a low bonding energy and, upon removal from the support substrate, the disassembly of the interface comprises the application of a mechanical action, a chemical etching and / or a thermal treatment on said layer.

[0064] Particularly advantageously, the method comprises depositing a stack of layers on a free surface of each portion of paving stone or of the layer of interest of the temporary substrate, the removable interface being formed from one of the layers of said stack. BRIEF DESCRIPTION OF THE FIGURES

[0065] Other characteristics and advantages of the invention will emerge from the detailed description which follows, with reference to the appended drawings in which:

[0066] - Figure 1A illustrates an embodiment of a composite structure obtained by a method according to the invention, implementing blocks of interest; Figure 1B illustrates a variant of said composite structure; Figure 1C illustrates another embodiment of a composite structure obtained by a method according to the invention, implementing a continuous layer of interest;

[0067] - Figures 2A to 2E respectively illustrate steps of removing paving stones from a donor substrate, placing said paving stones on an intermediate substrate, forming a weakening zone in said paving stones, bonding the intermediate substrate to a support substrate via the paving stones and transferring portions of the paving stones to the support substrate following detachment of the paving stones along the weakening zone;

[0068] - figure 3 illustrates a step of assembling the temporary substrate on the receiving substrate,

[0069] - figure 4 illustrates a step of removing the support substrate to transfer the paving portions onto the receiving substrate,

[0070] - Figures 5A to 5D respectively illustrate steps of forming a layer forming a removable interface on the blocks of Figure 2C, of ​​bonding the intermediate substrate and the blocks to a support substrate via said layer forming a removable interface, of transferring portions of the blocks to the support substrate following detachment of the blocks along the weakening zone, and of assembling the temporary substrate to the receiving substrate;

[0071] - figure 6 illustrates the formation of a stack of layers on the paving portions of the temporary substrate of figure 2E, said stack including a layer forming a removable interface,

[0072] - figure 7 illustrates a step of assembling the temporary substrate of figure 6 on the receiving substrate.

[0073] For reasons of legibility of the figures, the various elements have not been represented to scale. Furthermore, the number of paving stone portions illustrated is only indicative. Reference signs that are identical from one figure to another designate the same elements, which are therefore not described with reference to each figure.

[0074] DETAILED DESCRIPTION OF EMBODIMENTS Figure 1A illustrates an example of a composite structure combining blocks or portions of blocks P'1, P'2, P'3 of a first material and a substrate 4 (called receiving substrate) formed of a second material different from the first material.

[0075] Advantageously, the paving stone portions comprise a material that is not commercially available as a large donor substrate. Thus, the donor substrate may have a diameter of less than 300 mm, for example of the order of 100 or 150 mm.

[0076] This is particularly the case for III-V semiconductor materials, including nitrides (e.g., for binary compounds, indium nitride (InN), gallium nitride (GaN) and aluminum nitride (AIN)), arsenides (e.g., for binary compounds, indium arsenide (InAs), gallium arsenide (GaAs) and aluminum arsenide (AlAs)), and phosphides (e.g., for binary compounds, indium phosphide (InP), gallium phosphide (GaP) and aluminum phosphide (AIP)).

[0077] The paving stone portions may also include IV or IV-IV semiconductor compounds, such as germanium and silicon carbide.

[0078] The paving stone portions may also comprise a piezoelectric material, for example lithium tantalate (LiTaOs) or lithium niobate (LiNbOa), potassium sodium niobate (K x Nai. xNbO3 or KNN), barium titanate (BaTiOs), quartz, lead zirconate titanate (PZT), a compound of lead-magnesium niobate and lead titanate (PMN-PT), zinc oxide (ZnO), aluminum nitride (AIN) or aluminum scandium nitride (AIScN) (non-exhaustive list).

[0079] The paving stone portions may also include an electrically insulating material, such as diamond, strontium titanate (SrTiOa), yttria zirconia (YSZ), or sapphire.

[0080] The receiving substrate is made of a second material distinct from that of the paving stones, said second material being typically adapted for different technological stages and not compatible with the technological stages carried out on the first material.

[0081] In certain embodiments (see FIG. 1 B), a bonding layer 40, for example a dielectric layer such as a layer of silicon oxide (SiOa), may be interposed between the portions of tiles P'1-P'3 and the receiving substrate 4.

[0082] Figure 1C illustrates another example of a composite structure formed from a stack of a layer of interest 20 of a first material and a receiving substrate 4 formed from a second material different from the first material.

[0083] Advantageously, the dimensions of the layer of interest and the receiving substrate are identical. The layer of interest is made of a material which is preferably commercially available in the form of a donor substrate of a dimension equal to that of the receiving substrate. Thus, the donor substrate may advantageously have a diameter of 100 or 150 mm.

[0084] The layer of interest advantageously comprises a III-V semiconductor material, comprising nitrides (for example, for binary compounds, indium nitride (InN), gallium nitride (GaN) and aluminum nitride (AIN)), arsenides (for example, for binary compounds, indium arsenide (InAs), gallium arsenide (GaAs) and aluminum arsenide (AlAs)), and phosphides (for example, for binary compounds, indium phosphide (InP), gallium phosphide (GaP) and aluminum phosphide (AIP)). As regards the ternary or quaternary compounds of interest, mention may be made of InGaAs, InGaP and InGaAlAs.

[0085] Although not illustrated, a bonding layer, for example a dielectric layer such as a silicon oxide (SiO2) layer, may be interposed between the layer of interest 20 and the receiving substrate 4.

[0086] The method of manufacturing the composite structure is substantially the same whether it comprises a plurality of paving stones of interest or a continuous layer of interest. Indeed, the set of paving stones can be likened to a discontinuous layer; conversely, the layer of interest can be likened to a single paving stone. Furthermore, the transfer or treatment of the paving stones implements the same methods as in the case of a single layer. Thus, unless specifically indicated, the description applies equally to a set of paving stones of interest as to a continuous layer of interest even if, for the sake of brevity, the description relates to the case of paving stones.

[0087] Formation of the temporary substrate

[0088] Figures 2A to 2E schematically illustrate the formation of a temporary substrate comprising the pavers placed on an intermediate substrate and the transfer of portions of said pavers to a support substrate.

[0089] With reference to Figure 2A, blocks P1-P3 are cut from a donor substrate 2. The cutting of the blocks can be carried out by any technique known to those skilled in the art. It can in particular be carried out by sawing and / or cleaving, or by laser cutting. It can also, for example, be combined with a step of partial plasma etching of the cutting lines, a technique known by the English term “plasma dicing”).

[0090] Figure 2B illustrates the placement of the tiles taken from the donor substrate 2 of Figure 2A on a base substrate 1 to form an intermediate substrate T.

[0091] Placement can be implemented by the “Pick and Place” technique, whereby a robot picks up a previously cut tile from the donor substrate and places it in a predetermined location on the intermediate substrate.

[0092] In some embodiments, each tile adheres to the base substrate 1 by molecular adhesion. For this purpose, surface treatments of the tiles and / or the base substrate 1 may be implemented beforehand in order to promote good molecular adhesion. These treatments may include in particular cleaning, the deposition of a bonding layer such as silicon oxide (SiCh), plasma activation before bonding and annealing.

[0093] In other embodiments, the bonding of the tiles to the base substrate 1 may involve a bonding layer, for example a polymer bonding layer, a eutectic bonding layer or a ceramic glue layer.

[0094] The base substrate 1 advantageously has a diameter greater than that of the donor substrate 2, for example a diameter of the order of 300 mm.

[0095] Given the size difference between the donor substrate and the base substrate 1, multiple donor substrates may be required to tile the entire surface of the base substrate 1 according to the desired tiling density to form the intermediate substrate T.

[0096] In the case of a continuous layer of interest, the steps of cutting the donor substrate(s) and placing them on the base substrate can be omitted.

[0097] Figure 2C illustrates the formation of a weakening zone in said PIPS tiles (or, in the case of a continuous layer, in the donor substrate) in order to delimit a surface portion of said tiles intended to be transferred onto a support substrate 3. As shown diagrammatically by the arrows, the weakening zone 11 is advantageously formed by implantation of atomic species, such as hydrogen and / or helium, in the tiles, at a depth corresponding to the thickness of the layer to be transferred.

[0098] Figure 2D illustrates the bonding of the intermediate substrate T of Figure 2C to a support substrate 3 via the blocks.

[0099] Particularly advantageously, each block adheres to the support substrate 3 by molecular adhesion. For this purpose, surface treatments of the blocks and / or the support substrate 3 may be implemented beforehand in order to promote good molecular adhesion. These treatments may include in particular cleaning, the deposition of a bonding layer such as silicon oxide (SiCh), plasma activation before bonding, polishing and annealing, preferably at low temperature (i.e. typically below 300°C).

[0100] In another embodiment, which will be described below with reference to FIGS. 5A-5D, each pad adheres to the support substrate via a layer 5 forming a removable interface.

[0101] The intermediate substrate T and the support substrate 3 have an identical diameter.

[0102] In some embodiments, the support substrate is a silicon substrate. A silicon support substrate is particularly advantageous due to its availability in a large diameter, typically 300 mm. Such a substrate is particularly suitable for transferring tiles of interest.

[0103] In other embodiments, the support substrate is a silicon carbide or aluminum nitride substrate. Silicon carbide and aluminum nitride substrates are generally available in smaller diameters, for example 100 or 150 mm. These substrates are particularly suitable for transferring a layer of interest from a donor substrate of 100 or 150 mm diameter, but are also usable for transferring tiles of interest.

[0104] Since the support substrate is chosen primarily for its mechanical and / or chemical properties, and not for its electrical or optical properties, it can be used in a low-cost form, for example polycrystalline (p-SiC, p-AIN). Furthermore, the choice of a polycrystalline form can make it possible to obtain a support substrate with a larger diameter than a monocrystalline form.

[0105] Compared to a silicon substrate, a SiC or AIN substrate has a thermal expansion coefficient closer to that of a III-V material constituting the tiles or the layer of interest. The thermal expansion coefficient of p-SiC can be adjusted quite finely by varying its structure (polytype (notably the hexagonal polytypes SiC-4H and SiC-6H or the cubic polytype SiC-3C), crystalline orientation of the grains, grain size, grain boundary structure, etc.) and / or its manufacturing process.

[0106] This better compatibility of thermal expansion coefficients makes it possible to minimize tension or compression stresses within the temporary substrate during its manufacture. Indeed, the step of transferring the tiles or the layer of interest onto the support substrate by the Smart Cut™ process requires one or more annealing operations, in particular for the consolidation of the bonding. In addition, among the possible treatments (detailed below) applied to the portions of tiles or the layer of interest before their transfer onto the receiving substrate, the epitaxial regrowths represent a significant thermal budget, especially since the epitaxial layer(s) have a high thickness (typically, several pm). For example, epitaxy is carried out at a temperature above 500 or 600°C for materials in the InP family, and an even higher temperature for materials in the GaAs and GaN families.

[0107] Then, with reference to FIG. 2E, the paving stones are detached along the weakening zone 11, in order to transfer the paving stone portions P'1, P'2, P'3 delimited by said weakening zone onto the support substrate. A temporary substrate 3' is thus formed comprising the paving stone portions P'1, P'2, P'3 and the support substrate 3.

[0108] The tiles placed on the base substrate 1 typically have a thickness of between 20 μm and 1000 μm, preferably between 100 μm and 700 μm. The transferred portion of each tile onto the support substrate 3 generally has a thickness of between 30 nm and 1.5 μm.

[0109] Treatment of temporary substrate paving stones

[0110] Particularly advantageously, the majority of the treatments to be carried out on the paving portions are carried out on the temporary substrate 3', before the latter is assembled with the receiving substrate 4.

[0111] This makes it possible in particular to overcome any incompatibility of the technological steps implemented on the paving portions on the one hand, and on the receiving substrate on the other.

[0112] Thus, all treatments of the portions of paving stones which could damage the receiving substrate or the production line are preferably carried out on the temporary substrate, in specific equipment.

[0113] In particular, in the manufacture of electronic components, a distinction is conventionally made between the so-called "front end" phase, corresponding to the preparation of the substrates to form, for example, transistors or laser diodes and other chip elements, and the so-called "back end" phase, corresponding to the assembly of the transistors, laser diodes and chip elements formed from said substrates to form electronic and / or optoelectronic components. In general, the steps carried out at high temperature (for example, above 500°C) are carried out during the "front end" phase, and the "back end" phase only involves lower temperatures (below 500°C) so as not to damage the chips.

[0114] In the invention, preferably, only treatments which do not involve a temperature higher than 500°C and which do not risk contaminating the receiving substrate are carried out after the transfer of the paving stone portions onto the receiving substrate 4. The treatments involving a temperature higher than 500°C and / or likely to contaminate or damage the receiving substrate are preferably carried out while the paving stone portions still belong to the temporary substrate 3', before their transfer onto the receiving substrate.

[0115] Depending on the applications, different treatments can be carried out on the paving sections.

[0116] In some embodiments, the treatment of the paving stone portions comprises the epitaxial formation of at least one layer of a third material on each paving stone portion. The third material may be identical to the first material. This makes it possible in particular to thicken the paving stone portions to a target thickness. Optionally, an additional layer of a fourth material distinct from the third material may be formed by epitaxy, the paving stone portion serving as a seed layer for the formation of said additional layer. For this purpose, the fourth material and the epitaxial operating conditions are chosen so that the additional layer has good crystalline quality.

[0117] For example, if the paving stone portions are made of a first III-V material (notably InP, GaN, GaAs, etc.), sapphire or germanium, the third or fourth material may be a III-V material. If the paving stone portions are made of germanium (respectively silicon carbide), the third material may be germanium or silicon germanium (respectively silicon carbide). If the paving stone portions are made of a piezoelectric material, the third or fourth material may be a piezoelectric material.

[0118] More generally, a person skilled in the art can carry out the epitaxial deposition of a plurality of layers of materials to form a complex epitaxial stack. He will be able to apply all his know-how, for example, in the field of epitaxy of stacks of III-V or non-III materials on GaAs, InP, Ge, GaN, SiC, etc. substrates.

[0119] As indicated above, a support substrate is preferably chosen whose coefficient of thermal expansion is as close as possible to that of the material of the tiles or the layer of interest and the epitaxial layers to minimize the stresses within the temporary substrate.

[0120] Furthermore, a person skilled in the art can carry out the epitaxial deposition of a layer forming a disassembly interface suitable for being disassembled between the support substrate and the tile portions intended to be transferred to the receiving substrate. Figure 6 thus illustrates the structure of Figure 2E on which a stack, preferably epitaxial, 6 has been deposited on each PT-P3' tile portion. The stack can be deposited by any deposition technique. Said stack comprises, on the side of the tile portions, a layer 5 intended to form the disassemblable interface. Layer 5 can in particular be made of the same material as one of the layers constituting the stack, but with a different doping, so that it can be selectively etched relative to the rest of the stack. As will be seen below, it is the part of the stack located on layer 5 which is intended to be transferred to a receiving substrate.This portion of the stack is shown consisting of two layers, but may include any other number of layers depending on the specifications of the devices to be formed in the stack.

[0121] In some embodiments, the treatment applied to the block portions may be etching. Such etching may in particular be implemented to delimit the outline of transistors or other optoelectronic elements such as diodes. It may also be implemented to remove a peripheral or interior area of ​​each block portion, for example to resize the block portions or subdivide them into several smaller portions, or to correct defects in the arrangement or alignment of the block portions. For this purpose, a protective film is formed on the surface of the block portions, such that the protective wire covers the areas of the block portions to be preserved, the protective film having openings located opposite the areas of the block portions to be removed.In this text, "etching" means a chemical and / or physical attack on the paving material, leading to the removal of the area of ​​the paving not covered by the protective film.

[0122] In the case where a continuous layer of interest is used instead of tiles, the processing may include selective etching allowing the formation of channels or trenches delimiting islands or bands, allowing an etchant to more easily reach an area to be etched upon removal of the supporting substrate.

[0123] In some embodiments, the treatment of the paving stone portions comprises at least one surface treatment, such as polishing, cleaning or even a dielectric deposition... Such a surface treatment can in particular make it possible to improve the subsequent adhesion of the paving stone portions to the receiving substrate, in particular in the case where the assembly of the temporary substrate and the receiving substrate is done by gluing. A dielectric deposition can also, for example, passivate the surface of a laser diode.

[0124] In some embodiments, the treatment of the tile portions may comprise doping at least a portion of the tile portions, in order to give said portion expected electrical properties. This doping operation may take place during an epitaxy step carried out on the tile portions, or be carried out independently by ion implantation or by diffusion for example.

[0125] In some embodiments, the treatment of the tiles may comprise at least one heat treatment. For example, said heat treatment may comprise a smoothing annealing of the tile portions, in order to remove defects linked to the transfer of the tile portions onto the support substrate. It may also, for example, accompany a doping step by implantation or by diffusion.

[0126] In some embodiments, processing the tile portions may include forming an interconnect, for example by doping a region of the tiles and / or depositing an electrically conductive layer on the tiles.

[0127] Naturally, the above-mentioned treatments can be combined, simultaneously or successively, the person skilled in the art being able to choose the order in which the treatments are carried out. For example, epitaxy of an additional layer can be accompanied by doping of said layer. According to another example, to form components such as lasers, several epitaxy steps can be implemented separated by other operations, such as photolithography.

[0128] Ultimately, these operations can lead to the intermediate production of complete sub-components. This takes advantage of the support substrate, whose mechanical properties are generally better than those of the donor substrate. Treatment of the recipient substrate

[0129] In certain applications, the receiving substrate is advantageously a substrate suitable for the production of electronic components, in particular by a CMOS process. Said receiving substrate can thus typically be a silicon substrate. It can also be made of other materials, in particular germanium, silicon carbide and II lV materials, in particular gallium arsenide (GaAs).

[0130] The material of the receiving substrate can be chosen in particular according to the material of the tiles. For example, a GaAs receiving substrate can be combined with a temporary substrate whose tiles are made of InP material, or a SiC receiving substrate can be combined with a temporary substrate whose tiles are made of diamond material.

[0131] In a manner known per se, the receiving substrate may be subjected to photolithography, localized doping, deposition of electrically insulating and / or electrically conductive layers, in particular with a view to manufacturing transistors. Said transistors may include field effect transistors, CMOS transistors, BiCMOS transistors, bipolar transistors, etc.

[0132] In other embodiments, the receiving substrate may simply be a bulk semiconductor substrate or a silicon-on-insulator (SOI) substrate.

[0133] In some applications, the receiving substrate is suitable for the production of radiofrequency (RF) devices. The receiving substrate may then have a high electrical resistivity (for example, greater than 1000 G. cm) and / or include a charge trapping layer (called “trap rich” in English).

[0134] Assembly of the temporary substrate and the receiving substrate

[0135] The assembly of the temporary substrate and the receiving substrate can be achieved by molecular adhesion bonding.

[0136] In one embodiment, as illustrated in FIG. 3, the receiving substrate 4 may be covered with a bonding layer 40, for example a layer of silicon oxide (SiO2).

[0137] In other embodiments, the bonding is direct, without the intermediary of such a layer.

[0138] The assembly may include annealing at a suitable temperature to strengthen the adhesion between the paving portions and the receiving substrate (or the bonding layer where applicable).

[0139] Other bonding techniques known to those skilled in the art are also conceivable.

[0140] Removing the support substrate With reference to Figure 4, the support substrate 3 is removed after assembling the temporary substrate 3' on the receiving substrate 4, so as to transfer the portions of tiles P'1-P'3 onto the receiving substrate 4.

[0141] In certain embodiments, this removal is carried out by grinding the support substrate until the surface of the paving stone portions opposite the receiving substrate 4 is exposed. Preferably, the grinding of the support substrate stops at a few μm to a few tens of μm from the surface of the paving stone portions. Then, the remainder of the support substrate can be removed by polishing and / or etching. Furthermore, this operation of removing the support substrate can be carried out either by the substrate manufacturer or preferably by the customer manufacturing the optoelectronic device.

[0142] Alternatively or additionally, removal may include polishing and / or engraving.

[0143] Although this removal of material consumes the support substrate and does not allow it to be reused, it does not significantly penalize the process from an economic point of view because the support substrate is made of a more available and less expensive material than that of the paving stones.

[0144] In other embodiments, the removal may also be carried out by detaching the support substrate from the paving stone portions (see Figures 5A-5D) or by detaching within the paving stone portions (see Figures 6-7). For this purpose, the interface between the paving stone portions and the support substrate or within the paving stone portions may be designed so as to promote the detachment of the paving stone portions in this removal step. The disassembly of said interface may be assisted by the application of mechanical stress, a chemical etching agent and / or a heat treatment.

[0145] Compared to removal by grinding, this method of removing the support substrate allows for the recovery of the support substrate and its multiple reuse, which is particularly advantageous when the support substrate is relatively expensive. Furthermore, the process is more environmentally friendly since it minimizes material waste.

[0146] In this context, a substrate of SiC, in particular p-SiC, or AIN, in particular p-AIN, is particularly advantageous for the following reasons. On the one hand, although more expensive than silicon, SiC or AIN has a high mechanical hardness which makes it a substrate particularly resistant to scratches and other degradations linked to multiple uses. Another advantage of SiC or AIN is its chemical inertness, which makes the support substrate particularly robust with respect to numerous chemical etching agents which are likely to be used to etch III-V materials or a possible bonding layer or removable interface. According to a first embodiment, the interface comprises a layer suitable for selective etching, that is to say formed of a material suitable for being etched selectively with respect to the material of the portions of tiles intended to be transferred onto the receiving substrate.Said material must therefore be different from the material of the portions of blocks intended to be transferred onto the receiving substrate and chosen to be able to be attacked by a chemical etching agent without the material of the portions of blocks intended to be transferred onto the receiving substrate being damaged by said etching agent.

[0147] In particular, said selective etching layer can be integrated into the portions of tiles, by being formed by epitaxy or by any other deposition technique, on the tiles before their bonding to the support substrate (see figures 5A-5D) or within a stack of layers formed on the portions of tiles (see figures 6-7).

[0148] Figure 5A illustrates the formation of a layer 5 intended to form a removable interface on the tiles P1-P3 of Figure 2C, said layer 5 being able to be formed before or after the implantation intended to form the weakening layer. If the formation of the layer 5 involves a thermal budget likely to cause detachment of the tiles along the weakening zone, the layer 5 is preferably formed before the implantation.

[0149] As illustrated in Figure 5B, the intermediate substrate 1 and the tiles P1-P3 are bonded to the support substrate 3 via the layer 5.

[0150] Referring to Figure 5C, the detachment of the paving stones is caused along the weakening zone, so as to transfer the portions of the paving stones P'1-P'3 onto the support substrate 3 with the layer 5 at the interface between the support substrate and the paving stone portions. This results in the temporary substrate 3' which incorporates a removable interface.

[0151] Referring to Figure 5D, the temporary substrate 3' is assembled on the receiving substrate 4.

[0152] The disassembly of the interface 5 therefore leads to the transfer of all the paving stone portions onto the receiving substrate. The support substrate 3 can therefore be recovered alone and reused to form a new temporary substrate.

[0153] Figures 6 and 7 illustrate a preferred embodiment of a removable interface.

[0154] As illustrated in Figure 6, a stack 6 of layers is formed, for example by epitaxy, on the tile portions of the temporary substrate of Figure 2E. Said stack includes a layer 5 forming a removable interface. Said layer 5 is preferably the first layer deposited on the free surface of the tile portions, or possibly a layer deposited subsequently, but it is in any case not located on the surface of the stack. Said layer 5 forms an interface between the tile portions, which are intended to remain integral with the support substrate after disassembly, and the rest of the stack, which is intended to be transferred to the support substrate at the end of disassembly.

[0155] Figure 7 illustrates a step of assembling the temporary substrate of Figure 6 on the receiving substrate.

[0156] To remove the support substrate 3 from the portions of tiles or parts of the stack intended to be transferred to the receiving substrate, it is therefore sufficient to expose the interface to an etching agent chosen to selectively etch the layer 5 relative to the rest of the portions of tiles P1'-P3'.

[0157] A person skilled in the art is able to determine the material of layer 5 and the etching agent depending on the material of the tile portions and the receiving substrate. For example, for gallium arsenide (GaAs) tiles, the selective etching layer can be formed from indium aluminum phosphide (InAlP) and a mixture of hydrochloric acid and ethanol can be used to selectively etch said layer.

[0158] An advantage of such a selective etching layer integrated into the tile portions is that the etchant can circulate in the free spaces between the tiles, which promotes etching at any point of the temporary substrate. In the case of a selective etching layer extending over the entire interface between two substrates, it may be difficult for the etchant to reach the center of the layer and etch it efficiently, or to be evacuated after reaction, which tends to slow down the etching or even stop it.

[0159] To overcome this drawback, in the case of a continuous layer of interest, a first solution consists of using mechanical assistance to apply a stress tending to separate the substrates to be detached and / or cause better circulation of the etching agent. Such a stress can be caused by a force of separation of the substrates or by the application of ultrasound. Other solutions consist of creating external accesses to the layer to be etched, so as to better irrigate the etching front with the etching agent. These accesses can be in the form of etching channels, which can be created by perforating the upper layer or the support substrate of the temporary substrate up to the area to be etched, in a direction perpendicular to the main surface of the temporary substrate and / or laterally, i.e. parallel to said main surface.This etching can also be implemented after having delimited in the temporary substrate structures to be under-etched, said structures being able to correspond to the final devices (of the MESA type) or not. The characteristic lateral distances of these accesses can be between a few tens of pm to a few mm, depending on the efficiency of the etching selectivity of the stacks considered. The design of these accesses and the associated processes can also be inspired by the field of MEMS (microelectromechanical systems), in which it is usual to carry out selective etchings of buried layers. Furthermore, in the case of the etching layer arranged in the stack of layers (see figures 6-7), another advantage is that not only the support substrate 3 but also the portions of tiles integral with it are recovered. Consequently, the temporary substrate can be directly reused.

[0160] Alternatively, the selective etching layer may be a silicon oxide (SiCh) layer formed on the support substrate before bonding the tiles. The material of the receiving substrate is chosen to be a material suitable for not being etched by the etching agent used to etch the oxide.

[0161] According to a second embodiment, the interface between the paving stone portions and the support substrate comprises a porous layer. Due to its porosity, said layer may be more mechanically fragile and / or promote chemical attack.

[0162] According to a third embodiment, the interface between the paving stone portions and the support substrate comprises a layer having a low bonding energy with respect to the paving stone portions and / or the support substrate. Such a layer can then be removed by mechanical action, possibly chemically assisted.

[0163] Optionally, finishing treatments of the free surface of the paving stones, in particular smoothing, polishing or cleaning, can be implemented to facilitate the technological steps to be carried out subsequently on the portions of paving stones.

[0164] Unlike prior art processes, the Smart Cut™ process does not involve removing the support substrate. In particular, no implantation is carried out in the paving stones to form a weakened zone. This avoids the problems of paving stone damage and the impossibility of recycling mentioned in the introductory section.

[0165] Formation of a new temporary substrate

[0166] The formation of the temporary substrate requires only a small thickness of paving stones, which are transferred from the intermediate substrate to the temporary substrate using the Smart Cut™ process. Once this transfer is complete, the entire intermediate substrate and remaining paving stones are available for the formation of a new temporary substrate.

[0167] To this end, the remainder of the paving stones is advantageously polished and / or cleaned in order to remove the defects linked to the installation and obtain a surface condition suitable for bonding to a support substrate.

[0168] In the case where the support substrate has been consumed by removal of material during the transfer of the paving portions onto the receiving substrate, a new support substrate similar to the previous one is provided and the steps described previously are repeated with the new temporary substrate thus formed.

[0169] In the case where the support substrate has been preserved at least in part, thanks to the use of a removable interface (in the embodiment of figures 5A-5D), it can be reused as a new support substrate. For this purpose, it can if necessary be subjected to a surface treatment to make it suitable for bonding to the remainder of the paving stones. The steps described previously are then repeated with the new temporary substrate thus formed.

[0170] Depending on the initial thickness of the paving stones and the thickness of the portions of paving stones transferred to the support substrate, it is thus possible to form several temporary substrates from the same set of paving stones placed on the intermediate substrate. This optimizes the quantity of material used for the paving stones, which reduces the unit cost of the temporary substrates.

[0171] Finally, in the case where the paving stone portions have been kept on the support substrate after dismantling (in the embodiment of figures 6-7), the remainder can be reused directly as a new temporary substrate. For this purpose, the free surface of the paving stone portions can be surface treated to make them suitable for bonding to a new receiving substrate. This optimizes the number of uses of the paving stone portions.

[0172] Examples

[0173] Example #1 - Layer of interest in InP

[0174] A temporary substrate of 150 mm diameter is fabricated comprising a p-SiC support substrate and an InP layer of interest, bonded via a buried electrically insulating SiO2 layer of 1 pm thickness.

[0175] An epitaxial stack is formed on the layer of interest, successively comprising a 0.5 pm thick InP layer, a 3 pm thick InGaAs layer and a 0.5 pm thick InP layer to form a PIN photodiode.

[0176] Chemical-mechanical polishing of the InP surface layer is carried out, leading to the removal of 50 to 100 nm of InP thickness.

[0177] The temporary substrate is bonded to a 150 mm diameter silicon receiving substrate, by atomic diffusion bonding (ADB) or SAG, no SiO2 type bonding layer being used for this final bonding.

[0178] A selective HF-based etching of the buried electrically insulating layer is implemented, so as to detach the support substrate from the composite structure consisting of the epitaxial stack and the receiving substrate.

[0179] Optionally, etching access channels are produced after epitaxy by making trenches crossing the temporary substrate, parallel to the main plane of said substrate, and / or mechanical assistance is used to separate the support substrate and the composite structure during etching.

[0180] Example No. 2 - InP tiles of interest and p-SiC support substrate The process of this example is substantially identical to that of example No. 1 but uses a plurality of tiles instead of a continuous layer of InP.

[0181] A temporary substrate of 300 mm diameter is fabricated comprising a p-SiC support substrate and InP interest tiles, bonded via a buried electrically insulating layer of SiO2 1 pm thick.

[0182] An epitaxial stack is formed on each tile, successively comprising a 0.5 pm thick InP layer, a 3 pm thick InGaAs layer and a 0.5 pm thick InP layer to form a PIN photodiode.

[0183] After epitaxy, a photolithographic etching of the contour of the blocks is carried out (the removed contour width being of the order of 500 pm).

[0184] A chemical-mechanical polishing of the InP surface layer of each block is carried out, leading to the removal of 50 to 100 nm of InP thickness.

[0185] The temporary substrate is bonded to a 150 mm diameter silicon receiving substrate, by atomic diffusion bonding (ADB) or SAG, no SiO2 type bonding layer being used for this final bonding.

[0186] Selective HF-based etching is implemented in the buried electrically insulating layer, so as to detach the support substrate from the composite structure consisting of the epitaxial stack and the receiving substrate.

[0187] Example #3 - InP layer of interest and sacrificial epitaxial layer

[0188] The process of this example is substantially identical to that of example no. 1 but implements detachment by selective etching using a sacrificial layer formed in the epitaxial stack.

[0189] A temporary substrate of 150 mm diameter is fabricated comprising a p-SiC support substrate and an InP layer of interest, bonded via a buried electrically insulating SiO2 layer of 0.2 pm thickness.

[0190] An epitaxial stack is formed on the layer of interest, successively comprising a sacrificial layer, a 0.5 pm thick InP layer, a 3 pm thick InGaAs layer and a 0.5 pm thick InP layer to form a PIN photodiode.

[0191] Chemical-mechanical polishing of the InP surface layer is carried out, leading to the removal of 50 to 100 nm of InP thickness.

[0192] The temporary substrate is bonded to a 150 mm diameter silicon receiving substrate, by atomic diffusion bonding (ADB) or SAG, no SiO2 type bonding layer being used for this final bonding.

[0193] Selective etching of the sacrificial layer with respect to the other layers of the epitaxial stack is carried out, so as to detach the support substrate from the composite structure consisting of the rest of the epitaxial stack and the receiving substrate.

[0194] Optionally, etching access channels are produced after epitaxy by making trenches crossing the temporary substrate, parallel to the main plane of said substrate, and / or mechanical assistance is used to separate the support substrate and the composite structure during etching.

[0195] Example No. 3bis - InP layer of interest and sacrificial epitaxial layer

[0196] The process of this example is substantially identical to that of example no. 1, except that no SiC>2 layer is present at the interface between the layer of interest and the support substrate.

[0197] Example #4 - InP interest tiles and sacrificial epitaxial layer

[0198] The process of this example is substantially identical to that of example no. 2 but includes, as in example no. 4, the formation of a sacrificial layer in the epitaxial stack formed on each tile.

[0199] Example No. 5 - InP interest blocks and p-AIN support substrate

[0200] The process of this example is substantially identical to that of example 2 except that the support is made of p-AIN instead of p-SiC.

[0201] Example No. 6 - Receiving substrate comprising components

[0202] The method of this example is substantially identical to that of examples 1 to 5 but the silicon receiving substrate comprises components formed at least partially before bonding to the temporary substrate.

[0203] Example No. 7 - Receiving substrate comprising components

[0204] The process of this example is substantially identical to that of example 3 but the temporary substrate comprises III-V components formed at least partially before bonding to the receiving substrate.

[0205] Naturally, these examples are given for illustrative purposes only and are not limiting, and may be combined in all their technically feasible variations.

[0206] Applications

[0207] The composite structure thus obtained can be used for various applications.

[0208] According to a first application example, corresponding to 6G communication technology, the composite structure aims to combine several stages of radiofrequency devices operating in different frequency ranges. Thanks to stacks of epitaxially grown materials on portions of InP tiles, elements such as transistors can be produced to operate at very high frequencies, typically beyond 100 GHz. Power amplifiers or low-noise amplifiers, both characterized by good high-frequency performance, can be produced. The receiving substrate, for example a silicon substrate or a silicon-on-insulator (SOI) substrate, optionally comprising one or more SiGe layers, allows for optimal integration of the other stages of the component that can operate at lower frequencies, typically below 100 GHz.

[0209] Another example of applications based on the same combination of InP chip portions, on which epitaxial stacks have been formed, and a silicon receiver substrate concerns the integration of infrared laser diodes in the chip portions with their management and reading circuit in silicon technology in the receiver substrate. Very varied applications are concerned, such as optical interconnections for data centers or LiDARs (acronym for the English term "Laser Imaging Detection And Ranging") for autonomous driving.

[0210] Another example concerns micro-LED (pLED) screens. The tile portions serve as growth seeds for an epitaxial stack based on gallium nitride for the production of pLEDs. The receiving substrate houses the silicon technology management and reading circuit for the pLEDs.

Claims

CLAIMS 1. Method for manufacturing a composite structure (4'), comprising: (a) the formation of a temporary substrate (3') comprising a support substrate (3) and a plurality of portions of paving stones (P'1-P'3), respectively a layer of interest (20), of a first material arranged on the support substrate (3), the formation of said temporary substrate (3') comprising: (i) taking a plurality of tiles (P1-P3) from at least one donor substrate (2) and placing each tile (P1-P3) on an intermediate substrate (T), each donor substrate (2) having a diameter smaller than the diameter of the intermediate substrate (T), respectively providing a donor substrate (2), (ii) the formation of a weakening zone (11) in each block (P1-P3) by implantation of atomic species so as to delimit a portion (P'1-P'3) of block to be transferred, respectively the formation of a weakening zone in the donor substrate by implantation of atomic species so as to delimit a layer of interest (20) to be transferred, (iii) bonding the intermediate substrate (T), respectively the donor substrate, to the support substrate (3) via the blocks (P1-P3), respectively the layer of interest, and (iv) detaching the paving stones (P1-P3), respectively from the donor substrate, along the weakening zone (11), so as to transfer the portions of paving stones (P'1-P'3), respectively the layer of interest (20) onto the support substrate (3), (b) the formation of a removable interface (5) arranged between the support substrate (3) and the paving portions (P'1-P'3), respectively the layer of interest (20), or in or on the paving portions (P'1-P'3), respectively the layer of interest (20), (c) assembling the temporary substrate (3') with a receiving substrate (4) made of a second material different from the first material by means of said portions of paving stones (P'1-P'3), respectively of the layer of interest (20), and (d) removing the support substrate (3) by dismantling the removable interface (5) so as to transfer at least part of the portions of paving stones (P'1-P'3), respectively of the layer of interest (20), onto the receiving substrate (4) to form the composite structure.

2. Method according to claim 1, comprising at least one step of treating the portions of tiles (P'1-P'3), respectively of the layer of interest (20) before assembling said portions of tiles (P'1-P'3), respectively of the layer of interest (20) on the receiving substrate (4).

3. The method of claim 2, wherein said processing comprises: - epitaxy of a layer of at least a third material on each portion of the tile, respectively on the layer of interest, - an engraving, - a surface treatment, - doping, - heat treatment, - the formation, in the temporary substrate, of channels or trenches for access of an etching agent to the removable interface, and / or - the formation of an interconnection.

4. Method according to one of claims 2 or 3, in which said step of treating the portions of paving stones (P'1-P'3), respectively of the layer of interest (20), is carried out at a temperature greater than or equal to 500°C.

5. Method according to one of claims 1 to 4, in which the receiving substrate (4) comprises at least part of an electronic circuit formed before the assembly of the temporary substrate (3') and the receiving substrate (4).

6. The method of claim 5, comprising forming said electronic circuit portion by a CMOS process.

7. Method according to claim 6, comprising at least one step of finalizing the electronic circuit after the transfer of the portions of tiles (P'1-P'3), respectively of the layer of interest (20), onto the receiving substrate (4).

8. Method according to claim 7, in which each step of finalizing the electronic circuit is carried out at a temperature below 500°C.

9. Method according to one of claims 5 to 8, wherein said electronic circuit comprises at least one transistor, in particular a field effect transistor, a CMOS transistor, a BiCMOS transistor or a bipolar transistor, and / or at least one diode, in particular a laser diode or a light-emitting diode (LED).

10. Method according to one of claims 1 to 9, in which the first material is chosen from: - III-V materials, such as indium nitride (InN), gallium nitride (GaN), aluminum nitride (AIN), indium arsenide (InAs), gallium arsenide (GaAs), aluminum arsenide (AlAs), indium phosphide (InP), gallium phosphide (GaP) or aluminum phosphide (AIP), - piezoelectric materials, such as lithium tantalate (LiTaO3), lithium niobate (LiNbOa), potassium sodium niobate (KxNa1-xNbO3 or KNN), barium titanate (BaTiOa), quartz, lead zirconate titanate (PZT), a compound of lead magnesium niobate and lead titanate (PMN-PT), zinc oxide (ZnO), aluminum nitride (AIN) or aluminum scandium nitride (AIScN), - germanium or silicon carbide, and - an electrically insulating material such as diamond, strontium titanate, yttria zirconia or sapphire.

11. Method according to claim 10 in combination with claim 4, in which the third material is chosen from: III-V materials, piezoelectric materials, silicon carbide, silicon germanium and germanium.

12. Method according to one of claims 1 to 11, in which the second material is chosen from silicon, germanium, silicon carbide and III-V materials, in particular gallium arsenide.

13. Method according to one of claims 1 to 12, in which the support substrate (3) comprises silicon, silicon carbide, in particular polycrystalline silicon carbide, or aluminum nitride, in particular polycrystalline aluminum nitride.

14. Method according to one of claims 1 to 13, in which the removable interface (5) comprises a selective etching layer, a porous layer and / or a layer having a low bonding energy and, when removing the support substrate (3), the dismantling of the interface comprises the application of a mechanical action, a chemical etching and / or a heat treatment on said layer.

15. Method according to claim 14, comprising the deposition of a stack of layers (6) on a free surface of each portion of paving stone (P'1-P'3), respectively of the layer of interest (20) of the temporary substrate (3'), the removable interface (5) being formed from one of the layers of said stack (6).

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