Electrostatic chuck device, manufacturing method therefor, and method of refurbishing electrostatic chuck device

Abstract

Provided is an electrostatic chuck device that, with post-use refurbishing processes taken into consideration, keeps down the incidence of labor and costs to the extent possible, while enabling repeated manifesting of initial characteristics including leakage current value, volume resistivity, and surface roughness.　This electrostatic chuck device is provided with a base substrate having a refrigerant flow path, and an electrostatic chuck having internal electrodes between an insulating layer and a dielectric layer, with the dielectric-layer side being a workpiece adsorption surface. The electrostatic chuck device is characterized in that the dielectric layer in the electrostatic chuck has on the surface thereof an alumina coating film in a thickness of 1-5 μm inclusive, consisting of Al2O3, and the volume resistivity of the workpiece adsorption surface at room temperature is 1 × 1015 Ω・cm or more.

Description

Electrostatic chuck device, its manufacturing method, and electrostatic chuck device regeneration method

[0001] The present invention relates to an electrostatic chuck device including a base substrate and an electrostatic chuck, a manufacturing method thereof, and a regenerating method for an electrostatic chuck device, and more particularly to an electrostatic chuck device having a predetermined alumina coating film on the surface of a dielectric layer in the electrostatic chuck, a manufacturing method thereof, and a regenerating method for an electrostatic chuck device.

[0002] Electrostatic chuck devices are widely used to attract and hold various workpieces in semiconductor manufacturing processes and liquid crystal device manufacturing processes that use plasma etching equipment, plasma film deposition equipment (CVD, PVD), ion implantation equipment, electron beam lithography equipment, etc.

[0003] However, when used in a plasma etching device, for example, the electrostatic chuck device is damaged by the electrochemical action of the ions, electrons, and radicals contained in the plasma.

[0004] Specifically, the oxide film (anodized aluminum film) on the base material constituting the electrostatic chuck device may be reduced or fluorinated (altered), generating reaction by-products, or the dielectric layer of the electrostatic chuck may deteriorate, resulting in an increase in leakage current. If the device continues to be used in this state, the reaction by-products may turn into particles and contaminate workpieces such as semiconductor wafers and glass substrates, or the increased leakage current may reduce the chucking force for these workpieces or damage the circuits formed on the semiconductor wafers.

[0005] Therefore, electrostatic chuck devices that have been used for a certain period of time are cleaned, and if the damage is significant, the surface may be polished to form an oxide film again (see, for example, Patent Document 1).

[0006] However, taking into consideration the effort and cost involved, there is a limit to the electrostatic chuck devices that can be remanufactured, and there are cases where it is necessary to give up on remanufacturing even if the device is normal except for the damaged portion.

[0007] Incidentally, in order to ensure plasma resistance during plasma etching, it has been disclosed that a coating layer of 20 μm or less is formed by electron beam coating assisted by an ion beam (see Patent Document 2). In the examples of Patent Document 2, an example is given in which a 5 μm thick yttria (YO) coating is applied to a substrate that has been preheated to 200° C. for one hour.

[0008] Furthermore, in order to ensure corrosion resistance against plasma, it is disclosed that a plasma protective film is provided on a machinable ceramic in a wafer support in which a conductive member is embedded in the machinable ceramic (see Patent Document 3). In the examples of Patent Document 3, a 20 μm thick Y film is deposited by a reactive sputtering method. ２ O ３ and 10 μm thick Al ２ O ３ An example is described in which a plasma protective film made of the above is provided.

[0009] JP 2005-191500 A JP 2013-512573 A JP 2023-23820 A

[0010] Regarding an electrostatic chuck device that has been damaged due to use in a plasma etching device or the like, it is difficult to restore it so that its physical properties, such as the leakage current value and volume resistivity, are satisfied, while also reducing the effort and cost involved. Therefore, only a limited number of electrostatic chuck devices can actually be reused as electrostatic chuck devices.

[0011] Therefore, the inventors conducted extensive research to realize an electrostatic chuck device that takes into consideration even post-use recycling. As a result, they found that the above-described electrostatic chuck device can be realized by providing an alumina coating film with a predetermined film thickness on the surface of the dielectric layer of the electrostatic chuck, and thus completed the present invention.

[0012] Therefore, an object of the present invention is to provide an electrostatic chuck device that can repeatedly exhibit initial performance characteristics such as leakage current value, volume resistivity, and surface roughness while minimizing the effort and cost involved in recycling the electrostatic chuck device after use.

[0013] Another object of the present invention is to provide a method for manufacturing an electrostatic chuck device that can be used reliably for a long period of time while minimizing damage during manufacturing and that can be subjected to regeneration treatment as many times as possible.

[0014] A further object of the present invention is to provide a method for regenerating an electrostatic chuck device that allows for reliable repeated use. Means to achieve the task

[0015] That is, the present invention provides an electrostatic chuck device including a base substrate having a coolant flow path, and an electrostatic chuck having an internal electrode between an insulating layer and a dielectric layer, the dielectric layer side being a workpiece attracting surface, wherein the dielectric layer of the electrostatic chuck has an Al layer having a thickness of 1 μm or more and 5 μm or less on the surface. ２ O ３ and the workpiece chucking surface has a volume resistivity of 1×10 at room temperature. １５ The electrostatic chuck device is characterized in that the resistance is Ω·cm or more.

[0016] The present invention also provides a method for manufacturing an electrostatic chuck device including an electrostatic chuck on a base substrate having a coolant flow path, the method comprising: forming an insulating layer, an internal electrode, and a dielectric layer on the base substrate to form a laminated structure; and then depositing an Al film having a thickness of 1 μm to 5 μm on the surface of the dielectric layer by ion-assisted deposition at a film-forming temperature of 100° C. or less. ２ O ３ and an alumina coating film having a volume resistivity of 1×10 １５ This is a method for manufacturing an electrostatic chuck device, characterized in that an electrostatic chuck is formed on a base substrate by providing a workpiece attracting surface with a resistance of Ω·cm or more on the dielectric layer side.

[0017] Furthermore, the present invention provides a method for regenerating a used electrostatic chuck device including a base substrate having a coolant flow path, and an electrostatic chuck having an internal electrode between an insulating layer and a dielectric layer, with the dielectric layer side being the workpiece attracting surface, the method comprising: depositing an Al film having a thickness of 1 μm to 5 μm on the surface of the dielectric layer of the used electrostatic chuck by ion-assisted deposition at a film-forming temperature of 100° C. or less. ２ O ３and an alumina coating film having a volume resistivity of 1×10 １５ This is a method for regenerating an electrostatic chuck device, characterized in that a regenerated workpiece attracting surface having a resistance of Ω·cm or more is provided on the dielectric layer side.

[0018] The electrostatic chuck device of the present invention includes an electrostatic chuck having an internal electrode between an insulating layer and a dielectric layer, with the dielectric layer side serving as a workpiece attracting surface, and a base substrate having a coolant flow path.

[0019] Of these, the dielectric layer of the electrostatic chuck has an Al layer with a thickness of 1 μm or more and 5 μm or less on its surface. ２ O ３ Preferably, the thickness of the alumina coating film is 3 μm or more and 5 μm or less. ２ O ３ If the thickness of the alumina coating film is less than 1 μm, it will not be able to adequately function as a protective film against plasma, for example, when the electrostatic chuck device is used for a certain period of time. Conversely, if the thickness of the alumina coating film exceeds 5 μm, damage to the alumina coating film during deposition may actually impair the performance of the electrostatic chuck device.

[0020] As will be described later, in the present invention, the alumina coating film provided on the surface of the dielectric layer is preferably formed by ion-assisted deposition from the viewpoints of avoiding impurity contamination and forming a dense film. Ion-assisted deposition generally involves irradiating the deposition target with ionized gas particles from an ion gun during deposition, forcing the deposition material molecules onto the deposition target. This repels impurities, resulting in better film quality than conventional vacuum deposition and forming a dense film. In other words, in the case of ion-assisted deposition, the kinetic energy of the material molecules is higher than in vacuum deposition, etc., and in this invention, focusing on this point, the thickness of the alumina coating film is limited to 5 μm or less.

[0021] As will be explained in the examples, if the thickness of the alumina coating film exceeds 5 μm, the temperature during film formation will be 100° C. or higher. Therefore, for example, in an electrostatic chuck device in which a base substrate and an electrostatic chuck are bonded via a silicone-based adhesive, the temperature during film formation may cause a portion of the silicone-based adhesive to peel off at the interface between the base substrate and the electrostatic chuck. Furthermore, if the electrostatic chuck device has a ceramic sprayed film covering the end surface of the joint where the base substrate and the electrostatic chuck are bonded, forming an alumina coating film with a thickness exceeding 5 μm may cause cracks to occur in the ceramic sprayed film.

[0022] In the present invention, the protective film in the electrostatic chuck is made of Al. ２ O ３ The aluminum oxide coating film is made of Al. ２ O ３ The alumina coating film is made of Y ２ O ３ Since the volume resistivity is higher than that of other plasma-resistant films such as those described above, it is possible to obtain an electrostatic chuck device with excellent reliability while minimizing damage during film formation by limiting the film thickness as described above.

[0023] Generally, when the adsorption principles based on electrostatic chucks are broadly divided into three types: i) those based on Coulomb force, ii) those based on Johnsen-Rahbek force, and iii) those based on gradient force, the electrostatic chuck device according to the present invention is suitable for those based on iii) gradient force. In other words, the present invention is particularly suitable as an electrostatic chuck device that exhibits excellent adsorption force even for insulating workpieces that are difficult to polarize. Therefore, the volume resistivity of the workpiece adsorption surface is 1×10 １５ The volume resistivity of the workpiece suction surface is set by the workpiece suction with the working voltage applied (voltage on) and the workpiece detachment with the working voltage removed (voltage off). There is also a limit based on the leakage current value on the workpiece suction surface during suction, and the volume resistivity of the workpiece suction surface is 1 x 10 １６An ideal value is about Ω·cm, and this value is the practical upper limit of the volume resistivity. Note that the volume resistivity described in the present invention represents the value at room temperature (25° C.).

[0024] In addition, the electrostatic chuck device of the present invention has a leakage current value of 5×10 －３ The leakage current value is preferably 1×10 －３ The leakage current value of the workpiece chucking surface is preferably 5×10 －３ By keeping the current below μA, it is possible to prevent a decrease in the suction force on the workpiece, and even when a semiconductor wafer on which a circuit is formed is sucked as the workpiece, damage to the circuit can be prevented.

[0025] The electrostatic chuck device of the present invention comprises an electrostatic chuck having an internal electrode between a dielectric layer and an insulating layer having a predetermined alumina coating film, laminated on a base substrate having a coolant flow path, the dielectric layer side of the electrostatic chuck being the workpiece attracting surface, and the workpiece attracting surface having the above-mentioned volume resistivity, and the dielectric layer, insulating layer, and internal electrode constituting the electrostatic chuck, as well as the base substrate having the coolant flow path, may be the same as known ones. In addition to these, the electrostatic chuck device may also be provided with a heater electrode, or a plasma-resistant thermal sprayed film may be applied to the sidewall flange surface formed on the sidewall.

[0026] Here, the base substrate and the electrostatic chuck may be bonded to each other using various adhesives, adhesive sheets, etc., or the insulating layer, internal electrode, and dielectric layer may be sequentially formed on the surface of the base substrate by thermally spraying a ceramic or metal spray film. Alternatively, the insulating layer and dielectric layer of the electrostatic chuck may be formed of a ceramic sintered body, which may then be laminated in the form of green sheets and sintered or integrated by hot-press sintering. In this case, the internal electrodes may be formed by processing a high-melting-point metal such as W or Mo, or by printing a metal paste, or by using a metal foil or mesh, and the resulting laminated member may be bonded to the base substrate using an adhesive, adhesive sheet, etc.

[0027] Furthermore, the base substrate may be provided with a coolant flow path for supplying a cooling gas such as helium (He) to the workpiece held on the workpiece attracting surface via the electrostatic chuck, or for flowing cooling water to cool the electrostatic chuck, for the purpose of controlling the temperature of the workpiece, etc. The material for forming this base substrate is not particularly limited, but typically includes a metal workpiece substrate made of aluminum, an aluminum alloy, or the like.

[0028] When forming an alumina coating film on the surface of the dielectric layer of the electrostatic chuck, as described above, the film formation temperature is set to 100° C. or less by ion-assisted deposition, and an Al coating film having a thickness of 1 μm or more and 5 μm or less can be formed. ２ O ３ In this case, the alumina coating film may be formed before laminating the electrostatic chuck on the base substrate, but preferably, after forming an insulating layer, an internal electrode, and a dielectric layer on the base substrate to form a laminated structure, an alumina coating film of Al having a thickness of 1 μm to 5 μm is formed on the surface of the dielectric layer by ion-assisted deposition at a film-forming temperature of 100° C. or less. ２ O ３ It is preferable to form an alumina coating film consisting of the above.

[0029] That is, in the method for manufacturing an electrostatic chuck device according to the present invention, an Al film having a thickness of 1 μm or more and 5 μm or less is deposited by ion-assisted deposition. ２ O ３ By forming an alumina coating film consisting of the above, damage during film formation can be minimized. For example, an insulating layer, an internal electrode, and a dielectric layer can be provided on a base substrate via a silicone adhesive to form a laminated structure, and then a predetermined alumina coating film can be formed on the surface of the dielectric layer as described above. Alternatively, an insulating layer, an internal electrode, and a dielectric layer can be provided on a base substrate to form a laminated structure, and then a ceramic sprayed film can be provided on the side of the laminated structure, and then a predetermined alumina coating film can be formed on the surface of the dielectric layer.

[0030] Furthermore, according to the present invention, it is also possible to regenerate used electrostatic chuck devices that have already been used in plasma etching devices, ion implantation devices, and the like, as well as in semiconductor manufacturing processes and liquid crystal device manufacturing processes.

[0031] That is, even in an electrostatic chuck device in which the dielectric layer of the electrostatic chuck has deteriorated due to electrochemical action from ions, electrons, radicals, etc. contained in plasma, causing an increase in leakage current, the above-mentioned ion-assisted deposition can minimize damage during film formation. Therefore, preferably, the surface of the dielectric layer of the electrostatic chuck is polished, and then an Al film having a thickness of 1 μm to 5 μm is formed by ion-assisted deposition at a film formation temperature of 100° C. or less. ２ O ３ By forming an alumina coating film made of the above, the electrostatic chuck device can be regenerated.

[0032] According to the present invention, it is possible to realize an electrostatic chuck device that can restore the performance of the device at the time of initial manufacture while minimizing the effort and cost involved in recycling the device after use.

[0033] Furthermore, according to the method of the present invention, it is possible to obtain an electrostatic chuck device that can be used with high reliability for a long period of time while minimizing damage during manufacturing. Moreover, the method of the present invention is applicable not only to the manufacture of new electrostatic chuck devices but also to the regeneration of used electrostatic chuck devices, making it possible to repeatedly regenerate highly reliable electrostatic chuck devices semi-permanently.

[0034] Fig. 1 shows a process flow for obtaining an electrostatic chuck device according to the present invention. Fig. 2 shows a cross-sectional photograph of the electrostatic chuck device obtained in Test Example 1. Fig. 3 shows a cross-sectional photograph of the electrostatic chuck device obtained in Test Example 2.

[0035] The electrostatic chuck device according to the present invention will be specifically described below with reference to a preferred configuration example, although the present invention is not limited to the following.

[0036] Figure 1 shows an outline of the process flow for obtaining an electrostatic chuck device according to the present invention. First, to prepare an electrostatic chuck, ceramic green sheets with an alumina purity of 99.5% or higher are prepared to form a dielectric layer approximately 250 to 350 μm thick and an insulating layer approximately 600 to 2600 μm thick. Furthermore, the internal electrodes should have a thickness of approximately 20 to 50 μm. The internal electrodes can be formed by processing a high-melting-point metal such as W or Mo, by arranging a bulk material such as a metal foil or mesh of the same type, or by printing a metal paste containing a transition metal such as Ag or Pt on the dielectric layer or insulating layer.

[0037] Next, the materials for forming these green sheets and internal electrodes are laminated in the order of dielectric layer, internal electrode, and insulating layer, and then fired, or integrated by hot press firing to obtain a laminated member. ２ O ３ It becomes a sintered body.

[0038] Also, <2> a base substrate is prepared that has a refrigerant flow path for supplying a cooling gas such as helium to the workpiece and for flowing cooling water to cool the electrostatic chuck. This base substrate is preferably formed using high-purity aluminum, and the lamination surface on which the electrostatic chuck is laminated and the portions not protected by the sidewall sprayed film described below are anodized. Note that the screw holes for fixing the electrostatic chuck and the attachment of power supply pins for supplying power to the internal electrode of the electrostatic chuck can be similar to those of known electrostatic chuck devices.

[0039] Next, the prepared laminated member and the base substrate are bonded together using a silicone adhesive to <3> bond them together. The silicone adhesive used here is a SiO ２There are no particular limitations on the adhesive, provided it is semiconductor-grade and primarily made of a resin (silicone) made from the above raw material. Commercially available silicone adhesives include those manufactured by Dow-Toray Industries, Inc. and Toray Industries, Inc. In this case, the adhesive can be treated in the same manner as in known electrostatic chuck devices, for example, by adhering a silicone adhesive to the contact portion of a power supply pin connected to the internal electrode of the electrostatic chuck together with an insulating cover (insulating sleeve). Furthermore, <3> after the laminated structure is obtained by joining the laminated member and the base member, a ceramic sprayed film (i.e., a sidewall sprayed film) made of yttrium oxide or aluminum oxide is formed on the side surface of the laminated structure so as to cover the end surface of the joint to prevent erosion by plasma.

[0040] After the laminated member and base substrate constituting the electrostatic chuck are joined to obtain a laminated structure as described above, the top surface of the laminated member in the laminated structure, which corresponds to the dielectric layer side, is machined and polished <4>. Furthermore, the side surfaces of the laminated member, which are composed of the dielectric layer, internal electrode, and insulating layer, are machined <4>. In this process, the top surface of the laminated member must be polished to a surface roughness appropriate for the intended use of the electrostatic chuck device. Meanwhile, the polishing of the side surfaces of the laminated member is performed to adjust the outer diameter of the electrostatic chuck, and polishing can be performed to match the size of the workpiece to be attracted.

[0041] Here, the laminated structure machined and polished as described above is subjected to a primary performance test, which involves measuring the volume resistivity and leakage current value of the dielectric layer on the top surface of the laminated member. １５ It is confirmed that the resistance is Ω cm or more, and the leakage current value is 5 x 10 －３ It is confirmed that the leakage current is not more than μA. The leakage current value represents the leakage current value between the surface of the dielectric layer, which corresponds to the upper surface of the laminated member, and the internal electrode.

[0042] <5> After the primary performance test, <6> cleaning of the surface of the dielectric layer of the laminated member is performed. This cleaning is performed using two methods: a chemical treatment using an organic solvent, and a physical treatment using pure water and ultrasonic waves. During this process, the laminated structure is protected by a masking process to prevent the effects of these cleaning processes on areas other than the surface of the dielectric layer. After the chemical and physical cleaning processes, the laminated structure is <7> cleaned using an organic solvent such as IPA (isopropyl alcohol) and pure water.

[0043] After the above <7> cleaning, a secondary performance test <8> is carried out again to measure the volume resistivity and leakage current value of the dielectric layer on the top surface of the laminated member, and the volume resistivity at room temperature is 1 x 10 １５ Ω cm or more, and the leakage current value is 5×10 －３ Check that the current is below μA.

[0044] Next, an alumina coating film is formed on the surface of the dielectric layer of the laminated member of the laminated structure by ion-assisted deposition <9>. The preferable conditions for ion-assisted deposition are as follows: ２ O ３ The film formation process gas is a mixed gas of argon and oxygen, and the oxygen introduction amount is adjusted to be in the range of 30 to 60 sccm and the argon introduction amount is adjusted to be in the range of 10 to 100 sccm. The acceleration voltage is 100 to 200 V, and the vacuum degree is 1×10 －４ ~1 x 10 －１ Pa. By forming an alumina coating film with a thickness of 1 μm or more and 5 μm or less under these film formation conditions, it is possible to obtain an alumina coating film with the required quality while minimizing damage at a film formation temperature of 100° C. or less. Note that the surface of the dielectric layer other than the surface on which the alumina coating film is formed is masked for protection.

[0045] After that, after washing again with pure water, a tertiary performance test is carried out to measure the volume resistivity and leakage current value of the alumina coating film obtained above. In this tertiary performance test, the dimensions and flatness of the electrostatic chuck are measured to detect any abnormalities in the alumina coating, and the volume resistivity of the alumina-coated electrostatic chuck at room temperature is 1×10 １５ It is confirmed that the resistance is Ω cm or more, and the leakage current value is 5 x 10 －３ It is confirmed that the current is less than μA, and thus the electrostatic chuck device according to the present invention is completed.

[0046] The above has been described in relation to the case where a new electrostatic chuck device is manufactured, but when a used electrostatic chuck device is remanufactured, the process flow shown in Figure 1 is carried out from <5>. In this case, in the <5> primary inspection and <8> secondary inspection, the volume resistivity and leakage current value of the used electrostatic chuck itself (in that state) are measured and confirmed, and other steps are carried out in the same manner as when a new electrostatic chuck device is manufactured, followed by <9> ion-assisted deposition, etc. This makes it possible to remanufacture a used electrostatic chuck device.

[0047] [Test Examples 1 and 2] An electrostatic chuck device according to Test Example 1 (Example) was manufactured according to the process flow shown in Fig. 1 above. At that time, in <9> ion-assisted deposition, an alumina coating film having a thickness of 4 µm was formed on the surface of the dielectric layer under the following condition range. The film formation temperature was 100°C or less. This film formation temperature was measured as the environmental temperature of the electrostatic chuck where the film was formed. Film formation process gas: Argon / oxygen mixed gas Oxygen introduction amount: 20 to 40 sccm, Argon introduction amount: 5 to 10 sccm Acceleration voltage: 400 to 500 V Vacuum degree: 1 x 10 －２ Pa or less

[0048] 2 shows a cross-sectional photograph (optical microscope photograph at 100x magnification) of the obtained electrostatic chuck device, which shows that no cracks or the like were generated in the insulating layer, the dielectric layer, or the sidewall sprayed film on the base substrate.

[0049] On the other hand, an electrostatic chuck device according to Test Example 2 (Comparative Example) was manufactured in the same manner as Test Example 1, except that an alumina coating film having a thickness of 10 μm was formed under each of the conditions of <9> ion-assisted deposition in Test Example 1. Note that the film formation temperature in <9> ion-assisted deposition in Test Example 2 reached 150° C.

[0050] 3 shows a cross-sectional photograph of the electrostatic chuck device of Test Example 2 (Comparative Example). It was confirmed that cracks occurred in the sidewall sprayed film at the position where it contacted the base substrate and at the position where it contacted the dielectric layer / insulating layer. In other words, although the film-forming conditions for ion-assisted deposition were the same except for the film thickness, it was found that if the alumina coating film formed on the surface of the dielectric layer was too thick, damage would increase and adversely affect the electrostatic chuck device.

Claims

1. An electrostatic chuck device comprising a base substrate having a refrigerant flow path, and an electrostatic chuck having an internal electrode between an insulating layer and a dielectric layer, the dielectric layer side being the workpiece adsorption surface, wherein the dielectric layer of the electrostatic chuck has an Al layer having a thickness of 1 μm to 5 μm on the surface. ２ O ３ The workpiece adsorption surface has an alumina coating film having a volume resistivity of 1×10 １５ Electrostatic chuck device characterized in that the resistance is Ω·cm or more.

2. The leakage current value of the workpiece adsorption surface is 5 x 10 －３ 2. The electrostatic chuck device according to claim 1, wherein the current is equal to or less than μA.

3. The electrostatic chuck device according to claim 1, wherein the base material and the electrostatic chuck are bonded together via a silicone adhesive.

4. An electrostatic chuck device according to claim 3, further comprising a ceramic sprayed film covering an end surface of the joint where the base material and the electrostatic chuck are joined.

5. An electrostatic chuck device according to claim 1, wherein said alumina coating film is formed by ion-assisted deposition.

6. A method for manufacturing an electrostatic chuck device having an electrostatic chuck on a base substrate having a coolant flow path, comprising: forming an insulating layer, an internal electrode, and a dielectric layer on the base substrate to form a laminated structure; and then depositing an Al film having a thickness of 1 μm to 5 μm on the surface of the dielectric layer at a film-forming temperature of 100° C. or less by ion-assisted deposition. ２ O ３ The alumina coating film having a volume resistivity of 1×10 １５ A method for manufacturing an electrostatic chuck device, comprising providing a workpiece attracting surface having a resistance of Ω·cm or more on a dielectric layer side and forming an electrostatic chuck on a base substrate.

7. A method for manufacturing an electrostatic chuck device as described in claim 6, further comprising providing an insulating layer, an internal electrode, and a dielectric layer on the base substrate via a silicone adhesive to form a laminated structure, and then forming an alumina coating film on the surface of the dielectric layer.

8. A method for manufacturing an electrostatic chuck device as described in claim 7, comprising providing an insulating layer, an internal electrode, and a dielectric layer on the base substrate to form a laminated structure, providing a ceramic sprayed film on the side of the laminated structure, and then forming an alumina coating film on the surface of the dielectric layer.

9. A method for regenerating a used electrostatic chuck device comprising a base substrate having a coolant flow path, and an electrostatic chuck having an internal electrode between an insulating layer and a dielectric layer, the dielectric layer side being the workpiece adsorption surface, comprising: depositing an Al film having a thickness of 1 μm to 5 μm on the surface of the dielectric layer of the used electrostatic chuck by ion-assisted deposition at a film-forming temperature of 100° C. or less. ２ O ３ The alumina coating film having a volume resistivity of 1×10 １５ A method for regenerating an electrostatic chuck device, comprising providing a regenerated workpiece adsorption surface having a resistance of Ω·cm or more on a dielectric layer side.

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