Substrate support assembly, substrate processing apparatus, and substrate processing method

Abstract

Disclosed is this substrate support assembly. A base of the substrate support assembly has a flow path. A first gas supply unit is connected to a first vessel. The first gas supply unit is configured to supply a first gas to the first vessel in order to supply a first heat transfer medium in the first vessel to the flow path via at least one first pipe. A second gas supply unit is connected to a second vessel. The second gas supply unit is configured to supply a second gas to the second vessel. A heat transfer medium supply unit further includes at least one third pipe and a valve.

Description

Substrate support assembly, substrate processing apparatus, and substrate processing method

[0001] SUMMARY Exemplary embodiments of the present disclosure relate to a substrate support assembly, a substrate processing apparatus, and a method for processing a substrate.

[0002] A plasma processing apparatus is used in plasma processing of a substrate. The plasma processing apparatus described in Patent Document 1 below includes a chamber and an adsorption device. The adsorption device adsorbs the substrate. A coolant flow path is formed inside the adsorption device. A coolant is supplied to the coolant flow path through a coolant supply port. The coolant supplied to the coolant flow path is discharged through a coolant discharge port.

[0003] Japanese Patent Application Laid-Open No. 2001-110885

[0004] The present disclosure provides techniques for improving substrate temperature controllability.

[0005] In one exemplary embodiment, a substrate support assembly includes a base, a substrate support on the base, and a heat transfer medium supply. The base has a flow path. The heat transfer medium supply is connected to the flow path. The heat transfer medium supply includes a first container, at least one first pipe, a second container, at least one second pipe, a first gas supply, and a second gas supply. The first container is configured to hold a heat transfer medium therein. The at least one first pipe is connected between a first end of the flow path and the container. The at least one second pipe is connected between a second end of the flow path and the second container. The first gas supply is connected to the first container. The first gas supply is configured to supply a first gas to the first container to supply the heat transfer medium in the first container via the at least one first pipe to the flow path. The second gas supply is connected to the second container. The second gas supply is configured to supply a second gas to the second container. The heat transfer medium has a specific gravity greater than the specific gravity of the first gas and the specific gravity of the second gas. The heat transfer medium supply unit further includes at least one third pipe and a valve. The valve is connected between the first container and the second container via the at least one third pipe.

[0006] According to one exemplary embodiment, improved temperature control of the substrate is achieved.

[0007] FIG. 1 is a diagram for explaining an example of the configuration of a plasma processing system; FIG. 2 is a diagram for explaining an example of the configuration of a capacitively coupled plasma processing apparatus; FIG. 3 is a diagram schematically showing a substrate support assembly according to an exemplary embodiment; FIG. 4 is a diagram schematically showing a substrate support assembly according to another exemplary embodiment; FIG. 5 is a flowchart of a substrate processing method according to an exemplary embodiment; FIG. 6 is a diagram schematically showing a substrate support assembly according to yet another exemplary embodiment; FIG. 7 is a plan view of a movable plate according to an exemplary embodiment; and FIG. 8 is a flowchart of a substrate processing method according to another exemplary embodiment.

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings, in which the same or equivalent parts are designated by the same reference numerals.

[0009] FIG. 1 is a diagram illustrating an exemplary configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support assembly 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust port is connected to an exhaust system 40 (described later). The substrate support assembly 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0010] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), or surface wave plasma (SWP). Various types of plasma generators may be used, including alternating current (AC) plasma generators and direct current (DC) plasma generators. In one embodiment, the AC signal (AC power) used in the AC plasma generator has a frequency in the range of 100 kHz to 10 GHz. Thus, AC signals include radio frequency (RF) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0011] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. This program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read-only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0012] The following describes a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 2 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0013] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support assembly 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support assembly 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support assembly 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support assembly 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support assembly 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0014] The substrate support assembly 11 includes a main body 5 and a ring assembly 112. The main body 5 has a central region 5a for supporting a substrate W and an annular region 5b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 5b of the main body 5 surrounds the central region 5a of the main body 5 in a plan view. The substrate W is disposed on the central region 5a of the main body 5, and the ring assembly 112 is disposed on the annular region 5b of the main body 5 so as to surround the substrate W on the central region 5a of the main body 5. Therefore, the central region 5a is also called a substrate support surface for supporting the substrate W, and the annular region 5b is also called a ring support surface for supporting the ring assembly 112.

[0015] In one embodiment, the main body 5 includes a base 50 and a substrate support 51. The substrate support 51 is, for example, an electrostatic chuck. The base 50 includes a conductive member. The conductive member of the base 50 can function as a lower electrode. The substrate support 51 is disposed on the base 50. The substrate support 51 includes a ceramic member 51a and an electrostatic electrode 51b disposed within the ceramic member 51a. The ceramic member 51a has a central region 5a. In one embodiment, the ceramic member 51a also has an annular region 5b. Note that another member surrounding the substrate support 51, such as an annular electrostatic chuck or an annular insulating member, may also have the annular region 5b. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the substrate support 51 and the annular insulating member. At least one RF / DC electrode coupled to an RF power source 31 and / or a DC power source 32, which will be described later, may be disposed within the ceramic member 51a. In this case, at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal, which will be described later, is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 50 and the at least one RF / DC electrode may function as multiple lower electrodes. Alternatively, the electrostatic electrode 51b may function as the lower electrode. Therefore, the substrate support assembly 11 includes at least one lower electrode.

[0016] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0017] The showerhead 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0018] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0019] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0020] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0021] The second RF generator 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0022] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to the at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to the at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0023] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating the sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0024] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0025] 3 is a diagram schematically illustrating a substrate support assembly according to one exemplary embodiment. As described above, the substrate support assembly 11 includes a main body 5. The main body 5 includes a base 50 and a substrate support 51 on the base 50. The substrate support 51 is disposed on the base 50. In one embodiment, the base 50 may be supported on a base material 10c via an insulating member 10b. In the example shown in FIG. 3, the main body 5 is supported by an insulating member 10b within the chamber 10. The insulating member 10b is disposed on the base material 10c. The base material 10c may form a bottom wall of the chamber 10.

[0026] In one embodiment, the substrate support assembly 11 may further include at least one heater 51c. The heater 51c is disposed within the substrate support 51. The heater 51c is disposed, for example, within the ceramic member 51a of the substrate support 51. The heater 51c is located below the electrostatic electrode 51b. The heater 51c generates heat when power is supplied from a power supply (not shown) controlled by the heater controller HC. The substrate support assembly 11 may also include a temperature control module configured to adjust at least one of the substrate support 51, the ring assembly 112, and the substrate W to a target temperature. The substrate support assembly 11 may also include a heat transfer gas supply unit configured to supply a heat transfer gas to a gap between the back surface of the substrate W and the central region 5a.

[0027] The base 50 has a flow path 55 and a flow path 50a. In one embodiment, the flow path 55 is a flow path for at least one heat transfer medium, and the flow path 50a is a flow path for a heat transfer medium other than the at least one heat transfer medium. The flow path 50a and the flow path 55 may be provided within the base 50. The flow path 50a and the flow path 55 may be independent of each other.

[0028] In one embodiment, the at least one heat transfer medium may be a plurality of heat transfer media. The plurality of heat transfer media includes a first heat transfer medium M1 (heat transfer medium) and a second heat transfer medium M2. The first heat transfer medium M1 has a first specific gravity. The second heat transfer medium M2 has a second specific gravity. The second specific gravity is less than the first specific gravity. The first heat transfer medium M1 has a first thermal conductivity. The second heat transfer medium M2 has a second thermal conductivity. The first thermal conductivity may be greater than the second thermal conductivity.

[0029] In one embodiment, the first heat transfer medium M1 may be a liquid metal. The liquid metal may be a metal or eutectic alloy having a melting point of −10°C or less and a thermal conductivity of 5 W / mK or more under normal pressure (atmospheric pressure). The melting point of the liquid metal under normal pressure (atmospheric pressure) may be −15°C or less. The liquid metal may be, for example, a Ga-In-Sn alloy. In the Ga-In-Sn alloy, the Ga concentration may be 62% by mass, the In concentration may be 25% by mass, and the Sn concentration may be 13% by mass. As an example, the Ga-In-Sn alloy may be Galinstan (registered trademark). In one embodiment, the first heat transfer medium M1 may be silicone oil, anhydrous alcohol, ethylene glycol, or a fluorine-based refrigerant liquid. In one example, the first heat transfer medium M1 may be water.

[0030] In one embodiment, the second heat transfer medium M2 may be a liquid other than the liquid metal. The other liquid may be a liquid that does not chemically react with the liquid metal and does not contain water. The other liquid may have a melting point lower than that of the liquid metal. The other liquid may be, for example, silicone oil, anhydrous alcohol, ethylene glycol, or a fluorine-based refrigerant liquid. In one example, the second heat transfer medium M2 may be water. The first heat transfer medium M1 and the second heat transfer medium M2 may be liquids that are incompatible with each other.

[0031] In one embodiment, the base 50 may include a first base 52, a second base 53, and a support member 54. The first base 52 supports a substrate support 51 disposed thereon. The second base 53 is disposed below the first base 52 and has a flow path 50a therein. The support member 54 is interposed between the first base 52 and the second base 53 and supports the first base 52. The support member 54 defines a flow path 55 between the first base 52 and the second base 53. In one example, the flow path 55 extends between the flow path 50a and the substrate support 51.

[0032] In one embodiment, the thermal conductivity of the material of the support member 54 may be lower than the thermal conductivity of the material of the base 50. The thermal conductivity of the material of the support member 54 may be 1 W / mK or less. The support member 54 is made of, for example, at least one material selected from the group consisting of a resin material, a ceramic, and a composite material. The support member 54 may be made of a fluororesin. The support member 54 may be made of at least one material selected from the group consisting of polytetrafluoroethylene, polyether ether ketone, and porous ceramic. The support member 54 may be made of a composite material. A composite material is a material made by combining two or more different materials. For example, a composite material is a material made by combining two or more materials selected from the group consisting of a resin, a metal, a glass, and carbon.

[0033] The heat transfer medium other than the at least one heat transfer medium may be a coolant such as brine or a gas. The substrate support assembly 11 may further include a chiller unit. The chiller unit may be connected to the flow path 50 a to supply another heat transfer medium to the flow path 50 a.

[0034] The substrate support assembly 11 includes a heat transfer medium supply unit 6. The heat transfer medium supply unit 6 is connected to the flow path 55 and is configured to supply a heat transfer medium selected from the plurality of heat transfer media described above to the flow path 55. The temperature adjustment module described above may include the heat transfer medium supply unit 6, the heater 51c, the heater controller HC, the flow path 55, the flow path 50a, a chiller unit, or a combination thereof.

[0035] In one embodiment, the heat transfer medium supply unit 6 may be disposed between the substrate 10c and the base 50. The heat transfer medium supply unit 6 may be disposed inside the chamber 10. However, the heat transfer medium supply unit 6 may also be disposed outside the chamber 10. The heat transfer medium supply unit 6 is insulated from the chamber 10.

[0036] The heat transfer medium supply unit 6 includes at least one first pipe 71, a first container 61, at least one second pipe 72, a second container 62, at least one third pipe 73, a valve 73a (third valve), a first gas supply unit 81, and a second gas supply unit 82. In one embodiment, the heat transfer medium supply unit 6 may further include a valve 71a (first valve), a valve 72a (second valve), at least one fourth pipe 74, and a valve 74a (fourth valve).

[0037] At least one first pipe 71 is connected between the first end 55a of the flow path 55 and the first container 61. In one embodiment, the valve 71a is connected between the first end 55a and the first container 61 via the at least one first pipe 71. In the example shown in FIG. 3 , the heat transfer medium supply unit 6 includes a plurality of first pipes 71. One of the plurality of first pipes 71 connects the first end 55a and the valve 71a, and another of the plurality of first pipes 71 connects the valve 71a and the first container 61. Note that the first container 61 may be provided below the second container 62, as described below. The position at which another of the plurality of first pipes 71 is connected to the first container 61 may be, for example, the bottom of the first container 61.

[0038] At least one second pipe 72 is connected between the second end 55b of the flow path 55 and the second container 62. The second end 55b is the end of the flow path 55 opposite the first end 55a. In one embodiment, the valve 72a is connected between the second end 55b and the second container 62 via the at least one second pipe 72. In the example shown in FIG. 3 , the heat transfer medium supply unit 6 includes a plurality of second pipes 72. One of the plurality of second pipes 72 connects the second end 55b and the valve 72a, and another of the plurality of second pipes 72 connects the valve 72a and the second container 62. Note that the location where another of the plurality of second pipes 72 is connected to the second container 62 may be, for example, the ceiling (or upper wall) of the second container 62.

[0039] At least one third pipe 73 is connected between the first container 61 and the second container 62. The valve 73a is connected between the first container 61 and the second container 62 via the at least one third pipe 73. In the example shown in FIG. 3 , the heat transfer medium supply unit 6 includes a plurality of third pipes 73. One of the plurality of third pipes 73 connects the first container 61 to the valve 73a, and another of the plurality of third pipes 73 connects the valve 73a to the second container 62. Note that the position at which one of the plurality of third pipes 73 is connected to the first container 61 is higher than the position at which another of the plurality of first pipes 71 is connected to the first container 61, and may be, for example, the ceiling (or upper wall) of the first container 61. Furthermore, the position at which another one of the multiple third pipes 73 is connected to the second container 62 is lower than the position at which another one of the multiple second pipes 72 is connected to the second container 62, and may be, for example, the bottom of the second container 62.

[0040] At least one fourth pipe 74 is connected between the first end 55a and the first container 61. The at least one fourth pipe 74 may be provided in parallel with the at least one first pipe 71 or may merge with the at least one first pipe 71. The position at which the at least one fourth pipe 74 is connected to the first container 61 is located above the position at which the at least one first pipe 71 is connected to the first container 61. The position at which the at least one fourth pipe 74 is connected to the first container 61 is located below the position at which the at least one third pipe 73 is connected to the first container 61. The valve 74a is connected between the first end 55a and the first container 61 via the at least one fourth pipe 74. In the example shown in FIG. 3 , the heat transfer medium supply unit 6 includes a plurality of fourth pipes 74. One of the plurality of fourth pipes 74 connects the first end 55 a and the valve 74 a to each other, and another of the plurality of fourth pipes 74 connects the valve 74 a and the first container 61 to each other. One of the plurality of fourth pipes 74 may merge with at least one of the first pipes 71 between the first end 55 a and the valve 74 a.

[0041] The first container 61 is configured to be able to store the first heat transfer medium M1 therein. In one embodiment, the first container 61 may be configured to be able to further store the second heat transfer medium M2 therein. The second container 62 may be configured to be able to store the second heat transfer medium M2 therein.

[0042] In one embodiment, the first container 61 is disposed below the second container 62, and the second container 62 is disposed above the first container 61. In the example shown in FIG. 3 , the first container 61 and the second container 62 are separated by a single partition wall 63. In one embodiment, at least one of the inner surface of the first container 61, the inner surfaces of the plurality of first pipes 71, and the inner surface of the flow path 55 may be made of resin or ceramic. In this case, embrittlement of each inner surface due to the liquid metal is suppressed. In one embodiment, at least one of the inner surface of the second container 62, the inner surfaces of the plurality of second pipes 72, and the inner surface of at least one third pipe 73 may be made of resin or ceramic. In this case, embrittlement of each inner surface due to the liquid metal is suppressed.

[0043] Since the first container 61 is positioned below the second container 62, when the valve 73a is opened, the first heat transfer medium M1 and the second heat transfer medium M2 stored in the second container 62 are recovered into the first container 61 via at least one third pipe 73.

[0044] The first gas supply unit 81 is connected to the first container 61. In one example, the first gas supply unit 81 includes at least one first gas pipe 810 connected between the first container 61 and a gas source 8. The gas source 8 may be a gas cylinder, a compressor, or a gas booster. The first gas supply unit 81 is configured to supply a first gas to the first container 61 to supply the first heat transfer medium M1 in the first container 61 through at least one first pipe 71 to the flow path 55. The first gas is, for example, nitrogen or a noble gas.

[0045] The first gas supply unit 81 may include a valve 81a (fifth valve). The valve 81a is connected between the first container 61 and the gas source 8 via at least one first gas pipe 810. In the example shown in FIG. 3 , the first gas supply unit 81 is a plurality of first gas pipes 810 connected between the first container 61 and the gas source 8. One of the plurality of first gas pipes 810 connects the gas source 8 and the valve 81a, and another of the plurality of first gas pipes 810 connects the valve 81a and the first container 61. Note that the position where the first gas supply unit 81 is connected to the first container 61 may be, for example, the ceiling (or upper wall) of the first container 61.

[0046] In one embodiment, the substrate support assembly 11 may include an exhaust unit 81b (first exhaust unit). The exhaust unit 81b is configured to be able to exhaust gas from the first container 61. The exhaust unit 81b may exhaust gas from the first container 61 to the outside of the chamber 10, or may exhaust gas from the first container 61 into the chamber 10. In one example, the exhaust unit 81b includes a first leak valve connected to the first container 61. The exhaust unit 81b may include a vacuum pump connected to the first leak valve. In the example shown in FIG. 3 , the first leak valve is connected to the end of the first gas pipe 810, which is one of the multiple first gas pipes 810 and is connected to the first container 61.

[0047] The second gas supply 82 is connected to the second container 62. In one example, the second gas supply 82 includes at least one second gas line 820 connected between the second container 62 and the gas source 8. The second gas supply 82 is configured to supply a second gas to the second container 62. The gas may be, for example, nitrogen or a noble gas. The second gas may be the same as the first gas or may be different from the first gas.

[0048] The second gas supply unit 82 may include a valve 82a (sixth valve). The valve 82a is connected between the second container 62 and the gas source 8 via at least one second gas pipe 820. In the example shown in FIG. 3 , the second gas supply unit 82 is a plurality of second gas pipes 820 connected between the second container 62 and the gas source 8. One of the plurality of second gas pipes 820 connects the gas source 8 and the valve 82a, and another of the plurality of second gas pipes 820 connects the valve 82a and the second container 62. Note that the position where the second gas supply unit 82 is connected to the second container 62 may be, for example, the ceiling (or upper wall) of the second container 62.

[0049] In one embodiment, the substrate support assembly 11 may include an exhaust unit 82b (second exhaust unit). The exhaust unit 82b is configured to be able to exhaust gas from the second container 62. The exhaust unit 82b may exhaust gas from the second container 62 to the outside of the chamber 10, or may exhaust gas from the second container 62 into the chamber 10. In one example, the exhaust unit 82b includes a second leak valve connected to the second container 62. The exhaust unit 82b may include a vacuum pump connected to the second leak valve. In the example shown in FIG. 3 , the second leak valve is connected to the end of the second gas pipe 820, one of the multiple second gas pipes 820, that is connected to the second container 62.

[0050] When the first heat transfer medium M1 is not present in the flow path 55, the thermal resistance between the base 50 (second base 53) and the substrate support 51 is large. Therefore, the temperature of the substrate support 51 can be adjusted to a temperature away from the temperature of the base 50. As a result, the temperature of the substrate W on the substrate support 51 is adjusted in a relatively high temperature range. When the first heat transfer medium M1 is present in the flow path 55, the thermal resistance between the base 50 and the substrate support 51 is small. Therefore, the temperature of the substrate support 51 can be adjusted to a temperature close to the temperature of the base 50. As a result, the temperature of the substrate W on the substrate support 51 is adjusted in a relatively low temperature range. In the substrate support assembly 11, the first heat transfer medium M1 is supplied to the flow path 55 and further recovered from the flow path 55, so that the substrate temperature controllability of the substrate support assembly 11 is excellent.

[0051] A substrate support assembly according to another exemplary embodiment will be described below with reference to Fig. 4. Fig. 4 is a cross-sectional view of the substrate support assembly according to another exemplary embodiment. The substrate support assembly 11A shown in Fig. 4 can be used in place of the substrate support assembly 11 in the plasma processing apparatus 1. The substrate support assembly 11A will be described below from the perspective of differences from the substrate support assembly 11.

[0052] In the substrate support assembly 11A, the flow path 50a is a flow path for at least one heat transfer medium. The flow path 55 may be a flow path for a heat transfer medium other than the at least one heat transfer medium. At least one first pipe 71 is connected between a first end of the flow path 50a and the first container 61. At least one second pipe 72 is connected between a second end of the flow path 50a and the second container. The second end of the flow path 50a is the end opposite the first end of the flow path 50a. The substrate support assembly 11A may further include a chiller unit. The chiller unit may be connected to the flow path 55 to supply another heat transfer medium to the flow path 55. For example, the chiller units may be connected to the first end 55a and the second end 55b, respectively.

[0053] A substrate processing method according to one exemplary embodiment will be described below with reference to Fig. 5. Fig. 5 is a flowchart of the substrate processing method according to one exemplary embodiment. The substrate processing method shown in Fig. 5 (hereinafter referred to as "method MT") may be performed in the plasma processing system shown in Fig. 1. The following description will be given taking as an example a case where the controller 2 or an operator controls each part of the plasma processing apparatus 1 including the substrate support assembly 11 or the substrate support assembly 11A to perform the substrate processing method on a substrate W.

[0054] The method MT includes a step STa, a step STb, a step STc, a step STd, a step STe, and a step STf. The method MT may also include a step ST1 and a step ST2.

[0055] First, step STa is performed. In step STa, a substrate W is prepared on a substrate support 51 in the chamber 10 of the plasma processing apparatus 1. The steps of the method MT performed after step STa are performed in a state in which the substrate W is placed on the substrate support 51.

[0056] In one embodiment, process ST1 may be performed after process STa and before process STb. In process ST1, the plasma processing apparatus 1 is on standby. In process ST1, the valves 71a, 72a, 73a, and 74a are closed, and power may be supplied to the heater 51c from a power source controlled by the heater controller HC while at least the first heat transfer medium M1 and the second heat transfer medium M2 are not supplied to the flow path 55. The power supplied to the heater 51c in process ST1 may be smaller than the power supplied to the heater 51c in process STb, which will be described later. In one example, a first power may be supplied to the heater 51c. The temperature of the substrate W on the substrate support 51 may be set to a first temperature by heat generation by the heater 51c.

[0057] After step STa, step STb is performed. Step STb may be performed after step ST1. In step STb, the temperature of the substrate W prepared on the substrate support 51 is increased. Step STb includes a step of supplying power to the heater 51c from a power supply controlled by the heater controller HC while the valves 71a, 72a, 73a, and 74a are closed and at least the first heat transfer medium M1 and the second heat transfer medium M2 are not supplied to the flow path 55. The power supplied to the heater 51c in step STb may be greater than the power supplied to the heater 51c in step ST1. In one example, a second power may be supplied to the heater 51c. The second power is greater than the first power. The substrate W on the substrate support 51 may be heated to a second temperature by the heat generated by the heater 51c. The second temperature is greater than the first temperature.

[0058] In the process STb, since at least the first heat transfer medium M1 and the second heat transfer medium M2 are absent in the flow path 55, the thermal resistance between the base 50 (second base 53) and the substrate support 51 is large. Therefore, the temperature of the substrate support 51 can be adjusted to a temperature that is far from the temperature of the base 50. As a result, the temperature of the substrate W on the substrate support 51 is adjusted to a relatively high temperature range.

[0059] After the process STb, a process STc is performed. In the process STc, the temperature of the substrate W placed on the substrate support 51 is adjusted. The temperature to which the temperature of the substrate W is adjusted is a temperature for substrate processing of the substrate W. The process STc includes a process STc1, a process STc2, a process STc3, and a process STc4. The process STc includes a step of supplying a power smaller than the power in the process STb to the heater 51c from a power supply controlled by the heater controller HC. In one example, the temperature of the substrate W on the substrate support 51 may be maintained at the second temperature by heat generation by the heater 51c.

[0060] Among steps STc1, STc2, STc3, and STc4, step STc1 is performed first. In step STc1, the valves 72a and 74a are opened. After step STc1, step STc2 is performed. In step STc2, the gas in the second container 62 is exhausted by the exhaust unit 82b, and the first gas is supplied to the first container 61 by the first gas supply unit 81. In step STc2, for example, the valve 81a may be opened while the second leak valve is open. The gas in the second container is exhausted, reducing the pressure in the second container, and the gas is supplied into the first container 61, increasing the pressure in the first container 61. As a result, the second heat transfer medium M2 is supplied to the flow path 55 via at least one fourth pipe 74. After step STc2, step STc3 is performed. In step STc3, the valves 72a and 74a are closed. By process STc3, the second heat transfer medium M2 is held in the flow path 55. After process STc2, process STc4 is performed. Process STc4 may be performed after process STc3 or before process STc3. In process STc4, exhaust by the exhaust unit 82b and supply of the first gas to the first container 61 by the first gas supply unit 81 are stopped.

[0061] After the process STc, a process STd is performed. In the process STd, substrate processing is performed on the substrate W placed on the substrate support 51. In one example, the process STd may be a plasma processing. The process STd includes a process STd1 and a process STd2. The process STd includes a step of supplying a power smaller than the power in the process STb to the heater 51c from a power supply controlled by the heater controller HC. In one example, the temperature of the substrate W on the substrate support 51 may be maintained at the second temperature by the heat generated by the heater 51c.

[0062] In the processes STd1 and STd2, the process STd1 is performed first. In the process STd1, a processing gas is supplied into the chamber 10 from a gas inlet (for example, the shower head 13). After the process STd1, the process STd2 is performed. In the process STd2, the plasma generating unit 12 generates plasma from the processing gas in the chamber 10.

[0063] After step STd, step STe is performed. In step STe, a first heat transfer medium M1 is supplied to the flow path 55. In step STe, the temperature of the substrate W placed on the substrate support 51 is reduced. In order to supply the first heat transfer medium M1 to the flow path 55, step STe includes steps STe1, STe2, STe3, and STe4.

[0064] In steps STe1, STe2, STe3, and STe4, step STe1 is performed first. In step STe1, valves 71a and 72a are opened. After step STe1, step STe2 is performed. In step STe2, the exhaust unit 82b exhausts gas from the second container 62, and the first gas supply unit 81 supplies the first gas to the first container 61. For example, in step STe2, the valve 81a may be opened while the second leak valve is open. The gas from the second container is exhausted, reducing the pressure therein, and the gas is supplied into the first container 61, increasing the pressure therein. As a result, the first heat transfer medium M1 is supplied to the flow path 55 via at least one first pipe 71. By supplying the first heat transfer medium M1 to the flow path 55, the second heat transfer medium M2 in the flow path 55 can be recovered into the second container 62. After step STe2, step STe3 is performed. In step STe3, the valves 71a and 72a are closed. By step STe3, the first heat transfer medium M1 is held in the flow path 55. After step STe2, step STe4 is performed. Step STe4 may be performed after step STe3 or before step STe3. In step STe4, exhaust by the exhaust unit 82b and supply of the first gas to the first container 61 by the first gas supply unit 81 are stopped.

[0065] In the process STe, since the first heat transfer medium M1 is present in the flow path 55, the thermal resistance between the base 50 and the substrate support 51 is small. Therefore, the temperature of the substrate support 51 can be adjusted to a temperature close to the temperature of the base 50. As a result, the temperature of the substrate W on the substrate support 51 is adjusted to a relatively low temperature range.

[0066] In one embodiment, process ST2 may be performed after process STe and before process STf. Process ST2 includes processes ST21, ST22, ST23, and ST24. Of processes ST21, ST22, ST23, and ST24, process ST21 is performed first. In process ST21, valves 72a and 74a are opened. In process ST21, valve 71a may also be opened. After process ST21, process ST22 is performed. In process ST22, gas is exhausted from the first container 61 by the exhaust unit 81b, and a second gas is supplied to the second container 62 by the second gas supply unit 82. In process ST22, for example, valve 82a may be opened while the first leak valve is open. The gas in the first container is evacuated, reducing the pressure in the first container, and the gas is supplied into the second container 62, increasing the pressure in the second container 62. As a result, the gas is supplied to the flow path 55 via at least one second pipe 72. By supplying the gas to the flow path 55, the first heat transfer medium M1 in the flow path 55 can be recovered into the first container 61 via at least one fourth pipe 74. The first heat transfer medium M1 in the flow path 55 may be recovered into the first container 61 via at least one first pipe 71. After step ST22, step ST23 is performed. In step ST23, the valves 74a and 72a are closed. After step ST22, step ST24 is performed. Step ST24 may be performed after step ST23 or before step ST23. In step ST24, the exhaust by the exhaust unit 81b and the supply of the second gas to the second container 62 by the second gas supply unit 82 are stopped.

[0067] After the process STe, the process STf is performed. The process STf may be performed after the process ST2. In the process STf, at least the second heat transfer medium M2 is recovered from the second container 62 to the first container 61. In the process STf, the first heat transfer medium M1 and the second heat transfer medium M2 may be recovered from the second container 62 to the first container 61. The process STf includes a step of opening the valve 73a while the valves 71a, 72a, and 74a are closed. The second heat transfer medium M2 is recovered from the second container 62 to the first container 61 via at least one third pipe 73. In the process STf, the exhaust unit 81b may exhaust the gas in the first container. In the process STf, the second gas supply unit 82 may supply the second gas to the second container 62.

[0068] Although various exemplary embodiments have been described above, the present invention is not limited to the above-described exemplary embodiments, and various additions, omissions, substitutions, and modifications may be made. Furthermore, elements in different embodiments may be combined to form other embodiments.

[0069] The flow path 55 may include a plurality of independent flow paths. In one example, the flow path 55 may include a first flow path located below the central region 5 a (substrate support surface) and a second flow path located below the annular region 5 b (ring support surface).

[0070] There may be multiple gas sources 8. In one example, the gas source 8 includes a first gas source and a second gas source separate from the first gas source. For example, the first gas supply unit 81 may include at least one first gas pipe connected between the first container 61 and the first gas source, and the second gas supply unit 82 may include at least one second gas pipe connected between the second container 62 and the second gas source.

[0071] In the method MT, not all of the steps STa to STf may be performed. In one example, in the method MT, some of the steps STa to STf may be skipped.

[0072] In one embodiment, the method MT may include a step STn (not shown) in which both the first heat transfer medium M1 and the second heat transfer medium M2 are supplied to the flow path 55. In the method MT, the step STn may be performed instead of the step STc or the step STe, or may be performed before or after the step STc or the step STe. The step STn includes a step STn1, a step STn2, and a step STn3.

[0073] In step STn1, the valves 71a, 72a, and 74a are opened. After step STn1, step STn2 is performed. In step STn2, the gas in the second container 62 is exhausted by the exhaust unit 82b, and the first gas is supplied to the first container 61 by the first gas supply unit 81. In step STn2, for example, the valve 81a may be opened while the second leak valve is open. The gas in the second container 62 is exhausted, reducing the pressure in the second container 62, and the gas is supplied into the first container 61, increasing the pressure in the first container 61. As the pressure in the first container 61 increases, the first heat transfer medium M1 is supplied to the flow path 55 via at least one first pipe 71, and the second heat transfer medium M2 is supplied to the flow path 55 via at least one fourth pipe 74. After step STn2, step STn3 is performed. In step STn3, the valves 71a, 72a, and 74a are closed. The first heat transfer medium M1 and the second heat transfer medium M2 are held in the flow path 55 by step STn3.

[0074] A substrate support assembly according to another exemplary embodiment will be described below with reference to FIG. 6. FIG. 6 is a cross-sectional view of a substrate support assembly according to yet another exemplary embodiment. A substrate support assembly 11B shown in FIG. 6 can be used in place of the substrate support assembly 11 in the plasma processing apparatus 1. The substrate support assembly 11B will be described below from the perspective of differences from the substrate support assembly 11. The substrate support assembly 11B includes a base 50, a movable plate 57, a substrate support portion 51 on the base 50, a heat transfer medium supply portion 90, and a first exhaust portion 58 (exhaust portion).

[0075] In the substrate support assembly 11B, the base 50 has a tank 56 instead of the flow path 55. The tank 56 may be provided within the base 50. In one embodiment, the support member 54 of the base 50 defines the tank 56 between the first base 52 and the second base 53. In one example, the tank 56 is formed between the flow path 50a and the substrate support 51. The tank 56 may be a tank for multiple heat transfer media. The multiple heat transfer media include a first heat transfer medium M1 and a second heat transfer medium M2. In the example shown in FIG. 6, the tank 56 is a tank for a single heat transfer medium M. The heat transfer medium M includes the first heat transfer medium M1 or the second heat transfer medium M2. In one embodiment, the heat transfer medium M may be the liquid metal described above.

[0076] The movable plate 57 separates the interior of the tank 56 into a first space 56a and a second space 56b and is configured to be movable between the first space 56a and the second space 56b in the direction in which the first space 56a and the second space 56b are aligned. The movable plate 57 can slide along the inner surface of the tank 56. In one embodiment, the first space 56a and the second space 56b are aligned in the vertical direction. In the example shown in FIG. 6 , the first space 56a is located below the second space 56b. The movable plate 57 may extend between the first base 52 and the second base 53 so as to face the support member 54. In one embodiment, the movable plate 57 moves in the vertical direction. In one example, the inner surface of the tank 56 and the movable plate 57 are formed of ceramic. Alternatively, the movable plate 57 may be made of metal covered with resin or ceramic.

[0077] The first exhaust unit 58 is configured to be able to exhaust gas from the second space 56b. In one example, the first exhaust unit 58 includes at least one gas pipe 580 and a valve 58a connected between the second space 56b and the vacuum pump 40B. The first exhaust unit 58 may exhaust gas from the second space 56b to the outside of the chamber 10, or may exhaust gas from the second space 56b into the chamber 10. In the example shown in FIG. 6 , a valve 58a is connected to the end of one of the multiple gas pipes 580 connected to the second space 56b. Note that the first exhaust unit 58 may release gas from the second space 56b to the atmosphere without using the vacuum pump 40B.

[0078] The heat transfer medium supply unit 90 is connected to the first space 56a and is configured to supply at least one heat transfer medium to the tank 56. The temperature adjustment module described above may include the heat transfer medium supply unit 90, the heater 51c, the heater controller HC, the tank 56, the movable plate 57, the flow path 50a, a chiller unit, or a combination thereof.

[0079] In one embodiment, the heat transfer medium supply unit 90 may be disposed between the substrate 10c and the base 50. The heat transfer medium supply unit 90 may be disposed inside the chamber 10. However, the heat transfer medium supply unit 90 may also be disposed outside the chamber 10. The heat transfer medium supply unit 90 is insulated from the chamber 10.

[0080] The heat transfer medium supply unit 90 includes a cylinder 91, a piston 92, and a pipe 93. The cylinder 91 and the piston 92 may be disposed inside the chamber 10. The cylinder 91 and the piston 92 may be disposed between the substrate 10c and the base 50. The piston 92 divides the interior of the cylinder 91 into a third space 91a and a fourth space 91b and is configured to be movable between the third space 91a and the fourth space 91b along the direction in which the third space 91a and the fourth space 91b are aligned. The piston 92 slides along the inner surface of the cylinder 91. In one embodiment, the third space 91a and the fourth space 91b are arranged in the vertical direction. In the example shown in FIG. 6, the third space 91a is located below the fourth space 91b. The piston 92 can move in the vertical direction between the third space 91a and the fourth space 91b. In one example, the cylinder 91 and the piston 92 are formed of ceramic. The piston 92 may also be metal coated with a resin or ceramic.

[0081] The third space 91a is configured to be able to store the heat transfer medium M. The pipe 93 is connected between the third space 91a and the first space 56a. The piston 92 is configured to move to reduce the volume of the third space 91a in order to supply the heat transfer medium M in the third space 91a to the first space 56a via the pipe 93. In the example shown in FIG. 6 , the piston 92 moves downward to reduce the volume of the third space 91a. In one example, the substrate support assembly 11B may include a drive unit that moves the piston 92.

[0082] According to the substrate support assembly 11B, the first space 56a in the tank 56 where the heat transfer medium M is stored and the second space 56b to which the gas is supplied are separated by a movable plate 57. The third space 91a in the cylinder 91 where the heat transfer medium M is stored and the fourth space 91b to which the gas is introduced are separated by a piston 92. Therefore, the substrate support assembly 11B can reduce the possibility that the heat transfer medium M will leak into the gas pipe 950 and / or the gas pipe 580, which will be described later.

[0083] In one embodiment, the heat transfer medium supply unit 90 may include a first gas supply unit 95 (gas supply unit) connected to the fourth space 91b. In one example, the first gas supply unit 95 includes at least one gas pipe 950 connected between the fourth space 91b and a gas source 8B. The gas source 8B may be a gas cylinder, a compressor, or a gas booster. The first gas supply unit 95 is configured to supply gas to the fourth space 91b to supply the heat transfer medium M in the third space 91a to the first space 56a via a pipe 93. The gas may be, for example, nitrogen or a rare gas. The first gas supply unit 95 is configured to supply gas to the fourth space 91b and move the piston 92 to decrease the volume of the third space 91a by increasing the volume of the fourth space 91b.

[0084] The first gas supply unit 95 may include a valve 95a. The valve 95a is connected between the fourth space 91b and the gas source 8B via at least one gas pipe 950. In the example shown in FIG. 6 , the first gas supply unit 95 is a plurality of gas pipes 950 connected between the fourth space 91b and the gas source 8B. One of the plurality of gas pipes 950 connects the gas source 8B and the valve 95a, and another of the plurality of gas pipes 950 connects the valve 95a and the fourth space 91b. Note that the position where the first gas supply unit 95 is connected to the fourth space 91b may be, for example, the ceiling (or upper wall) of the fourth space 91b.

[0085] In one embodiment, the heat transfer medium supply unit 90 may include a second exhaust unit 96. The second exhaust unit 96 is configured to exhaust gas from the fourth space 91b. In one example, the second exhaust unit 96 includes at least one gas pipe 960 and a valve 96a connected between the fourth space 91b and the vacuum pump 40B. The second exhaust unit 96 may exhaust gas from the fourth space 91b to the outside of the chamber 10, or may exhaust gas from the fourth space 91b to the inside of the chamber 10. In the example shown in FIG. 6 , the gas pipe 960 and the valve 96a are connected to the gas pipe 950 connected to the fourth space 91b. Note that the second exhaust unit 96 may release gas from the fourth space 91b to the atmosphere without using the vacuum pump 40B. The gas pipe 960 may be connected to the fourth space 91b without using the gas pipe 950.

[0086] In one embodiment, the piston 92 is configured to move to decrease the volume of the fourth space 91b in order to supply the heat transfer medium M in the first space 56a to the third space 91a via the piping 93. In one embodiment, the second exhaust unit 96 is configured to exhaust gas from the fourth space 91b and move the piston 92 to decrease the volume of the fourth space 91b and increase the volume of the third space 91a in order to supply the heat transfer medium M in the first space 56a to the third space 91a via the piping 93.

[0087] In one embodiment, the substrate support assembly 11B may include a second gas supply unit 59 connected to the second space 56b. The movable plate 57 may be configured to move to reduce the volume of the first space 56a in order to supply the heat transfer medium M in the first space 56a to the third space 91a via the pipe 93. In one example, the second gas supply unit 59 includes at least one gas pipe 590 connected between the second space 56b and the gas source 8B. The second gas supply unit 59 is configured to supply gas to the second space 56b in order to supply the heat transfer medium M in the first space 56a to the third space 91a via the pipe 93. The second gas supply unit 59 is configured to supply gas to the second space 56b, thereby increasing the volume of the second space 56b and moving the movable plate 57 to reduce the volume of the first space 56a.

[0088] The second gas supply unit 59 may include a valve 59a. The valve 59a is connected between the second space 56b and the gas source 8B via at least one gas pipe 590. In the example shown in FIG. 6 , the second gas supply unit 59 is a plurality of gas pipes 590 connected between the second space 56b and the gas source 8B. One of the plurality of gas pipes 590 connects the gas source 8B to the valve 59a, and another of the plurality of gas pipes 590 connects the valve 59a to the second space 56b. The second gas supply unit 59 may be connected to the ceiling (or upper wall) of the second space 56b, for example. The second gas supply unit 59 does not have to be connected to the gas source 8B. The valve 59a may be open to the atmosphere via at least one gas pipe 590.

[0089] In one embodiment, the base 50 includes at least one conduit 52a. In the example shown in FIG. 6 , the at least one conduit 52a includes a plurality of conduits 52a. Each conduit 52a may be included in the first base 52. Each conduit 52a extends downward from the top surface of the tank 56 in the tank 56. Each conduit 52a has a tubular shape that provides an air gap therein. In one embodiment, each of the plurality of conduits 52a may include a pipe for supplying a coolant such as brine or gas, an electric wire connected to the electrostatic electrode 51b, an electric wire for supplying an RF signal to the lower electrode, a pipe for supplying a heat transfer gas to the gap between the back surface of the substrate W and the central region 5a, or a lifter pin for raising and lowering the substrate W. The movable plate 57 has a plurality of through holes through which the plurality of conduits 52a are inserted.

[0090] 7 is a plan view of the movable plate according to one example embodiment. In one embodiment, the movable plate 57 has a plurality of sealing members 57x. Each of the plurality of sealing members 57x may be an O-ring. The plurality of sealing members 57x may include a sealing member 57a disposed between a side surface of the movable plate 57 and the inner surface of the tank 56. The plurality of sealing members 57x may include a plurality of sealing members disposed between an inner surface of the movable plate 57 that defines each of the plurality of through-holes and a side surface of each of the plurality of conduits 52a.

[0091] The multiple seal members 57x may include multiple seal members 57b, 57c, 57d, 57e, and 57f. The multiple seal members 57b, 57c, 57d, 57e, and 57f may have different sizes. The multiple seal members 57b may be arranged adjacent to each other in the circumferential direction of the movable plate 57. The multiple seal members 57d may be arranged at equal intervals in the circumferential direction of the movable plate 57. One of the multiple seal members 57d may be arranged at the center of the movable plate 57.

[0092] In one example, the seal member 57b may be arranged between a side surface of the conduit 52a, through which piping for supplying a coolant such as brine or gas is disposed, and an inner surface defining the corresponding through-hole of the movable plate 57. In one example, the seal member 57c may be arranged between a side surface of the conduit 52a, through which an electric wire connected to the electrostatic electrode 51b is disposed, and an inner surface defining the corresponding through-hole of the movable plate 57. In one example, the seal member 57d may be arranged between a side surface of the conduit 52a, through which an electric wire for supplying an RF signal to the lower electrode is disposed, and an inner surface defining the corresponding through-hole of the movable plate 57. In one example, the seal member 57e may be arranged between a side surface of the conduit 52a, through which lifter pins for raising and lowering the substrate W are disposed, and an inner surface defining the corresponding through-hole of the movable plate 57. In one example, the sealing member 57f can be arranged between the side of the conduit 52a in which piping is arranged to supply heat transfer gas to the gap between the back surface of the substrate W and the central region 5a, and the inner surface defining the corresponding through hole of the movable plate 57.

[0093] In one embodiment, the gas pipe 580 may be connected to the second space 56b from below the tank 56. In this case, the gas pipe 580 connected to the second space 56b may be inserted through the first space 56a into a corresponding through-hole in the movable plate 57 and connected to the second space 56b. A seal member may be disposed between the inner surface defining the corresponding through-hole in the movable plate 57 and the side surface of the gas pipe 580. Because the gas pipe 580 is connected to the second space 56b from below the tank 56 and the gas pipe 580 is not disposed above the tank 56, the distance between the tank 56 and the substrate support 51 can be reduced.

[0094] A substrate processing method according to one exemplary embodiment will be described below with reference to Fig. 8. Fig. 8 is a flowchart of the substrate processing method according to one exemplary embodiment. The substrate processing method shown in Fig. 8 (hereinafter referred to as "method MTA") may be performed in the plasma processing system shown in Fig. 1. The following description will be given taking as an example a case where the control unit 2 or an operator controls each part of the plasma processing apparatus 1 including the substrate support assembly 11B to perform the substrate processing method on a substrate W.

[0095] The method MTA includes steps STa, STb, STd, and ST3, and may also include step ST1.

[0096] First, step STa is performed. In step STa, a substrate W is prepared on a substrate support 51 in the chamber 10 of the plasma processing apparatus 1. The steps of the method MT performed after step STa are performed in a state in which the substrate W is placed on the substrate support 51.

[0097] In one embodiment, process ST1 may be performed after process STa and before process STd. In process ST1, the plasma processing apparatus 1 is on standby. In process ST1, the valves 95a and 58a may be closed, and power may be supplied to the heater 51c from a power source controlled by the heater controller HC while the heat transfer medium M is not being supplied to the tank 56. The power supplied to the heater 51c in process ST1 may be smaller than the power supplied to the heater 51c in process STb, which will be described later. In one example, a first power may be supplied to the heater 51c. The temperature of the substrate W on the substrate support 51 may be set to a first temperature by heat generation by the heater 51c.

[0098] After the process STa, the process STb is performed. The process STb may be performed after the process ST1. In the process STb, the temperature of the substrate W prepared on the substrate support 51 is increased. The process STb includes a step of supplying power to the heater 51c from a power supply controlled by the heater controller HC while the valves 95a and 58a are closed and no heat transfer medium M is supplied to the tank 56. The power supplied to the heater 51c in the process STb may be higher than the power supplied to the heater 51c in the process ST1. In one example, a second power may be supplied to the heater 51c. The second power is higher than the first power. The substrate W on the substrate support 51 may be heated to a second temperature by the heat generated by the heater 51c. The second temperature is higher than the first temperature.

[0099] In the process STb, since there is no heat transfer medium M in the first space 56a of the tank 56, the thermal resistance between the base 50 (second base 53) and the substrate support 51 is large. Therefore, the temperature of the substrate support 51 can be adjusted to a temperature that is different from the temperature of the base 50. As a result, the temperature of the substrate W on the substrate support 51 is adjusted to a relatively high temperature range.

[0100] After the process STb, a process STd is performed. In the process STd, substrate processing is performed on the substrate W placed on the substrate support 51. In one example, the process STd may be a plasma processing. The process STd includes a process STd1 and a process STd2. The process STd includes a step of supplying a power smaller than the power in the process STb to the heater 51c from a power supply controlled by the heater controller HC. In one example, the temperature of the substrate W on the substrate support 51 may be maintained at the second temperature by the heat generated by the heater 51c.

[0101] In the processes STd1 and STd2, the process STd1 is performed first. In the process STd1, a processing gas is supplied into the chamber 10 from a gas inlet (for example, the shower head 13). After the process STd1, the process STd2 is performed. In the process STd2, the plasma generating unit 12 generates plasma from the processing gas in the chamber 10.

[0102] After step STd, step ST3 is performed. In step ST3, a heat transfer medium M is supplied to the first space 56a of the tank 56. In step ST3, the temperature of the substrate W placed on the substrate support 51 is reduced. Step ST3 includes steps ST31 and ST32.

[0103] First, step ST31 is performed. In step ST31, the valve 95a is opened. In step ST31, the first gas supply unit 95 supplies gas to the fourth space 91b. As the gas is supplied to the fourth space 91b and the pressure in the fourth space 91b increases, the piston 92 moves, and the volume of the fourth space 91b increases so as to decrease the volume of the third space 91a. As the volume of the third space 91a decreases, the third space 91a is pressurized, and the heat transfer medium M in the third space 91a is supplied to the first space 56a via the pipe 93.

[0104] In step ST31, the valve 58a may be opened. In step ST31, the first exhaust unit 58 may exhaust the gas in the second space 56b. As the gas in the second space 56b is exhausted and the pressure in the second space 56b decreases, the movable plate 57 moves, and the volume of the second space 56b decreases so that the volume of the first space 56a increases. As the volume of the first space 56a increases, the pressure in the first space 56a is reduced, and the heat transfer medium M in the third space 91a is supplied to the first space 56a via the pipe 93.

[0105] After step ST31, step ST32 is performed. In step ST32, the valve 95a is closed. By step ST32, the heat transfer medium M is held in the first space 56a of the tank 56. In step ST32, the supply of gas from the first gas supply unit 95 to the fourth space 91b is stopped. In step ST32, the valve 58a may be closed. The exhaust of gas from the second space 56b by the first exhaust unit 58 may be stopped.

[0106] In step ST3, since the heat transfer medium M is present in the first space 56a of the tank 56, the thermal resistance between the base 50 and the substrate support 51 is small. Therefore, the temperature of the substrate support 51 can be adjusted to a temperature close to the temperature of the base 50. As a result, the temperature of the substrate W on the substrate support 51 is adjusted to a relatively low temperature range.

[0107] The method MTA may further include a step ST4. The step ST4 is performed after the step ST3. In the step ST4, the heat transfer medium M in the first space 56a of the tank 56 is supplied to the third space 91a. The step ST4 includes a step S41 and a step ST42.

[0108] First, step ST41 is performed. In step ST41, the valve 59a is opened. In step ST41, the second gas supply unit 59 supplies gas to the second space 56b. As the gas is supplied to the second space 56b and the pressure in the second space 56b increases, the movable plate 57 moves, and the volume of the second space 56b increases so as to reduce the volume of the first space 56a. As the volume of the first space 56a decreases, the first space 56a is pressurized, and the heat transfer medium M in the first space 56a is supplied to the third space 91a via the pipe 93.

[0109] In step ST41, the valve 96a may be opened. In step ST41, the second exhaust unit 96 may exhaust the gas in the fourth space 91b. As the gas in the fourth space 91b is exhausted and the pressure in the fourth space 91b decreases, the piston 92 moves and the volume of the fourth space 91b decreases so that the volume of the third space 91a increases. As the volume of the third space 91a increases, the third space 91a is depressurized, and the heat transfer medium M in the first space 56a is supplied to the third space 91a via the pipe 93.

[0110] After step ST41, step ST42 is performed. In step ST42, the valve 59a is closed. By step ST42, the heat transfer medium M is held in the first space 56a of the tank 56. In step ST42, the supply of gas from the second gas supply unit 59 to the second space 56b is stopped. In step ST42, the valve 96a may be closed. The exhaust of gas from the fourth space 91b by the second exhaust unit 96 may be stopped.

[0111] Various exemplary embodiments included in the present disclosure are now described in [E1] to [E17] below.

[0112] [E1] A heating system comprising: a base having a flow path; a substrate support on the base; and a heat transfer medium supply unit connected to the flow path, wherein the heat transfer medium supply unit includes: a first container configured to be able to store a heat transfer medium therein; at least one first pipe connected between a first end of the flow path and the first container; a second container; at least one second pipe connected between a second end of the flow path and the second container; a first gas supply unit connected to the first container and configured to supply a first gas to the first container to supply the heat transfer medium in the first container to the flow path via the at least one first pipe; and a second gas supply unit connected to the second container and configured to supply a second gas to the second container, wherein the heat transfer medium has a specific gravity greater than that of the first gas and that of the second gas, wherein the heat transfer medium supply unit includes: at least one third pipe; a valve connected between the first container and the second container via the at least one third line.

[0113] [E2] The substrate support assembly according to E1, including a first exhaust unit configured to be able to exhaust gas from within the first container.

[0114] [E3] The substrate support assembly according to E1 or E2, further comprising a second exhaust unit configured to be able to exhaust gas from within the second container.

[0115] [E4] The substrate support assembly of any one of E1 to E3, wherein the heat transfer medium supply unit further includes a valve connected between the first end and the first container via the at least one first pipe.

[0116] [E5] The substrate support assembly of any one of E1 to E4, wherein the heat transfer medium supply unit further includes a valve connected between the second end and the second container via the at least one second pipe.

[0117] [E6] The substrate support assembly of any one of E1 to E5, wherein the first container is positioned below the second container.

[0118] [E7] The substrate support assembly of any one of E1 to E6, wherein the heat transfer medium is a liquid metal.

[0119] [E8] The substrate support assembly according to any one of E1 to E7, wherein at least one of the inner surface of the first container, the inner surface of the at least one first pipe, and the inner surface of the flow path is made of resin or ceramic.

[0120] [E9] The substrate support assembly described in any one of E1 to E8, wherein the heat transfer medium is a first heat transfer medium, the first container is capable of storing a second heat transfer medium therein, the second heat transfer medium having a specific gravity smaller than that of the first heat transfer medium and larger than that of the first gas and the second gas, the heat transfer medium supply unit further includes: at least one fourth pipe; and a valve connected between the first end and the first container via the at least one fourth pipe, and the position where the at least one fourth pipe is connected to the first container is located above the position where the at least one first pipe is connected to the first container.

[0121] [E10] A heating device comprising: a base having a tank; a movable plate that separates the inside of the tank into a first space and a second space and is configured to be movable between the first space and the second space along a direction in which the first space and the second space are aligned; a substrate support unit on the base; a heat transfer medium supply unit connected to the first space; and an exhaust unit configured to be able to exhaust gas from the second space, wherein the heat transfer medium supply unit has: a cylinder; a piston that separates the inside of the cylinder into a third space and a fourth space and is configured to be movable between the third space and the fourth space along a direction in which the third space and the fourth space are aligned; and a pipe connected between the third space and the first space, wherein the third space is configured to be able to store a heat transfer medium, and the piston is configured to move to reduce the volume of the third space in order to supply the heat transfer medium in the third space to the first space via the pipe. Substrate support assembly.

[0122] [E11] The substrate support assembly of E10, wherein the heat transfer medium supply unit further comprises a gas supply unit connected to the fourth space, and the gas supply unit is configured to supply gas to the fourth space and move the piston to increase the volume of the fourth space, thereby decreasing the volume of the third space.

[0123] [E12] The substrate support assembly described in E11, wherein the exhaust unit includes a first exhaust unit, and the heat transfer medium supply unit further has a second exhaust unit configured to be able to exhaust the gas in the fourth space, and the second exhaust unit is configured to exhaust the gas from the fourth space and move the piston to increase the volume of the third space by reducing the volume of the fourth space in order to supply the heat transfer medium in the first space to the third space via the piping.

[0124] [E13] A substrate support assembly described in E11 or E12, wherein the gas supply unit includes a first gas supply unit, and the substrate support assembly further comprises a second gas supply unit connected to the second space, and the movable plate is configured to move to reduce the volume of the first space in order to supply the heat transfer medium in the first space to the third space via the piping, and the second gas supply unit is configured to supply gas to the second space and move the movable plate to increase the volume of the second space, thereby reducing the volume of the first space.

[0125] [E14] A substrate support assembly described in any one of E10 to E13, wherein the first space and the second space are arranged in a vertical direction, the movable plate moves in the vertical direction, the base includes at least one conduit extending downward from a top surface of the tank in the tank, the movable plate provides at least one through hole through which the at least one conduit is inserted, and the movable plate has a plurality of sealing members including a sealing member arranged between a side surface of the movable plate and an inner surface of the tank, and at least one sealing member arranged between at least one inner surface defining the at least one through hole and a side surface of the conduit.

[0126] [E15] The substrate support assembly of any one of E10 to E14, wherein the heat transfer medium is a liquid metal.

[0127] [E16] The substrate support assembly according to any one of E10 to E15, further comprising: a base; and an insulating member disposed on the base, wherein the base is supported on the base via the insulating member, and the heat transfer medium supply unit is disposed between the base and the base.

[0128] [E17] A substrate processing apparatus comprising: a chamber; and a substrate support assembly according to any one of E1 to E16 configured to support a substrate in the chamber.

[0129] From the foregoing, it will be understood that various embodiments of the present disclosure have been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the appended claims.

[0130] REFERENCE SIGNS LIST 1... plasma processing apparatus, 6... heat transfer medium supply section, 10... chamber, 10c... substrate, 11, 11A, 11B... substrate support assembly, 12... plasma generation section, 50... base, 50a, 55... flow path, 51... substrate support section, 51c... heater, 55a... first end, 55b... second end, 56... tank, 56a... first space, 56b... second space, 57... movable plate, 58... first exhaust section, 61... first container, 62... second container, 71... first piping, 72... second piping, 73... third piping, 7 4...fourth piping, 71a...first valve, 72a...second valve, 73a...third valve, 74a...fourth valve, 81...first gas supply unit, 82...second gas supply unit, 81a...fifth valve, 82a...sixth valve, 81b...first exhaust unit, 82b...second exhaust unit, 90...heat transfer medium supply unit, 91...cylinder, 91a...third space, 91b...fourth space, 92...piston, 93...piping, HC...heater controller, M...heat transfer medium, M1...first heat transfer medium, M2...second heat transfer medium, W...substrate.

Claims

1. A substrate support assembly comprising: a base having a flow path; a substrate support portion on the base; and a heat transfer medium supply portion connected to the flow path, the heat transfer medium supply portion including: a first container configured to store a heat transfer medium therein; at least one first pipe connected between a first end of the flow path and the first container; a second container; at least one second pipe connected between a second end of the flow path and the second container; a first gas supply portion connected to the first container and configured to supply a first gas to the first container to supply the heat transfer medium in the first container to the flow path through the at least one first pipe; and a second gas supply portion connected to the second container and configured to supply a second gas to the second container, the heat transfer medium having a specific gravity greater than the specific gravity of the first gas and the specific gravity of the second gas, the heat transfer medium supply portion further including: at least one third pipe; and a valve connected between the first container and the second container through the at least one third pipe.

2. The substrate support assembly according to claim 1, including a first exhaust portion configured to exhaust the gas in the first container.

3. The substrate support assembly according to claim 1, including a second exhaust portion configured to exhaust the gas in the second container.

4. The substrate support assembly according to claim 1, wherein the heat transfer medium supply portion further includes a valve connected between the first end and the first container through the at least one first pipe.

5. The substrate support assembly according to claim 1, wherein the heat transfer medium supply portion further includes a valve connected between the second end and the second container through the at least one second pipe.

6. The substrate support assembly according to claim 1, wherein the first container is disposed below the second container.

7. The substrate support assembly according to claim 1, wherein the heat transfer medium is liquid metal.

8. The substrate support assembly according to claim 7, wherein at least one of an inner surface of the first container, an inner surface of the at least one first pipe, and an inner surface of the flow path is made of resin or ceramic.

9. The heat transfer medium is the first heat transfer medium, the first container can store therein a second heat transfer medium having a specific gravity smaller than that of the first heat transfer medium and larger than the specific gravities of the first gas and the second gas, the heat transfer medium supply unit further includes at least one fourth pipe and a valve connected between the first end and the first container via the at least one fourth pipe, and a position where the at least one fourth pipe is connected to the first container is located above a position where the at least one first pipe is connected to the first container. The substrate support assembly according to any one of claims 1 to 8.

10. A base having a tank, a movable plate configured to separate the interior of the tank into a first space and a second space and to be movable along a direction in which the first space and the second space are arranged side by side between the first space and the second space, a substrate support portion on the base, a heat transfer medium supply unit connected to the first space, and an exhaust unit configured to be able to exhaust gas in the second space. The heat transfer medium supply unit includes a cylinder, a piston configured to separate the interior of the cylinder into a third space and a fourth space and to be movable along a direction in which the third space and the fourth space are arranged side by side between the third space and the fourth space, and a pipe connected between the third space and the first space. The third space is configured to be able to store a heat transfer medium, and the piston is configured to move so as to reduce the volume of the third space in order to supply the heat transfer medium in the third space to the first space via the pipe. Substrate support assembly.

11. The heat transfer medium supply unit further includes a gas supply unit connected to the fourth space, and the gas supply unit is configured to supply gas to the fourth space and move the piston so as to reduce the volume of the third space by increasing the volume of the fourth space. The substrate support assembly according to claim 10.

12. The exhaust portion includes a first exhaust portion, the heat transfer medium supply portion further has a second exhaust portion configured to be able to exhaust the gas in the fourth space, and the second exhaust portion exhausts the gas from the fourth space to supply the heat transfer medium in the first space into the third space through the pipe, and is configured to move the piston so as to increase the volume of the third space by reducing the volume of the fourth space, the substrate support assembly according to claim 11.

13. The gas supply portion includes a first gas supply portion, the substrate support assembly further includes a second gas supply portion connected to the second space, the movable plate is configured to move so as to reduce the volume of the first space to supply the heat transfer medium in the first space into the third space through the pipe, and the second gas supply portion is configured to supply gas into the second space and move the movable plate so as to reduce the volume of the first space by increasing the volume of the second space, the substrate support assembly according to claim 11.

14. The first space and the second space are arranged in the vertical direction, the movable plate moves in the vertical direction, the base includes at least one conduit extending downward from the top surface of the tank in the tank, the movable plate provides at least one through hole through which the at least one conduit is inserted, and the movable plate has a plurality of seal members including at least one seal member disposed between the side surface of the movable plate and the inner surface of the tank and at least one seal member disposed between at least one inner surface defining the at least one through hole and the side surface of the conduit, the substrate support assembly according to claim 10.

15. The heat transfer medium is liquid metal, the substrate support assembly according to claim 10.

16. Further comprising a base material and an insulating member disposed on the base material, the base is supported on the base material through the insulating member, and the heat transfer medium supply portion is disposed between the base and the base material, the substrate support assembly according to claim 7 or 15.

17. A substrate processing apparatus comprising a chamber and the substrate support assembly according to any one of claims 1 to 8, 10 to 15 configured to support a substrate in the chamber.

18. [Correction based on Rule 91, 14.05.2025] A substrate processing method executed in a substrate processing apparatus, wherein the substrate processing apparatus includes: a chamber; a substrate support assembly configured to support a substrate in the chamber; a heater disposed in a substrate support portion of the substrate support assembly; a heater controller electrically connected to the heater; a gas introduction unit configured to introduce a processing gas into the chamber; and a plasma generation unit configured to generate plasma from the processing gas in the chamber. The substrate support assembly includes a base having a flow path, a substrate support portion on the base, and a heat transfer medium supply unit connected to the flow path. The heat transfer medium supply unit includes a first container configured to store a first heat transfer medium and a second heat transfer medium therein, at least one first pipe connected between a first end of the flow path and the first container, a first valve connected between the first end of the flow path and the first container via the at least one first pipe, a second container, at least one second pipe connected between a second end of the flow path and the second container, a second valve connected between the second end of the flow path and the second container via the at least one second pipe, a first gas supply unit connected to the first container and configured to supply a first gas to the first container to supply the first heat transfer medium in the first container to the flow path via the at least one first pipe, a first exhaust unit configured to exhaust the gas in the first container, a second gas supply unit connected to the second container and configured to supply a second gas to the second container, wherein the specific gravity of the second heat transfer medium is smaller than the specific gravity of the first heat transfer medium and larger than the specific gravity of the first gas and the specific gravity of the second gas, a second exhaust unit configured to exhaust the gas in the second container, at least one third pipe, a third valve connected between the first container and the second container via the at least one third pipe, and at least one fourth pipe connected to the first container above a position where the at least one first pipe is connected to the first container.A fourth valve connected between the first end and the first container via the at least one fourth pipe, and the substrate processing method includes: (a) preparing a substrate on the substrate support portion; (b) after (a), raising the temperature of the substrate; (c) after (b), adjusting the temperature of the substrate to a temperature for substrate processing on the substrate; (d) after (b), performing the substrate processing on the substrate; (e) after (d), lowering the temperature of the substrate; (f) after (e), recovering at least the second heat transfer medium from the second container. (b) includes supplying power from the heater controller to the heater in a state where the first valve, the second valve, the third valve, and the fourth valve are closed and at least the first heat transfer medium and the second heat transfer medium are not supplied to the flow path. (c) and (d) include supplying power from the heater controller to the heater that is less than the power in (b) over (c) and (d). (c) includes, to supply the second heat transfer medium to the flow path: (c1) opening the second valve and the fourth valve; (c2) after (c1), exhausting the gas in the second container by the second exhaust portion and supplying the first gas to the first container by the first gas supply portion; (c3) after (c2), closing the second valve and the fourth valve; (c4) after (c2), stopping the exhaust by the second exhaust portion and the supply of the first gas to the first container by the first gas supply portion. (d) includes: (d1) supplying the processing gas into the chamber from the gas introduction portion; (d2) generating plasma from the processing gas in the chamber by the plasma generation portion. (e) includes, to supply the first heat transfer medium to the flow path: (e1) opening the first valve and the second valve; (e2) after (e1), exhausting the gas in the second container by the second exhaust portion and supplying the first gas to the first container by the first gas supply portion; (e3) after (e2),The step of closing the first valve and the second valve, and (e4) after the step (e2), the step of stopping the exhaust by the second exhaust portion and the supply of the first gas to the first container by the first gas supply portion, and the step (f) includes the step of opening the third valve in a state where the first valve, the second valve, and the fourth valve are closed, a substrate processing method.

19. A substrate processing method executed in a substrate processing apparatus, the substrate processing apparatus comprising: a chamber; a substrate support assembly configured to support a substrate in the chamber; a heater disposed in a substrate support portion of the substrate support assembly; a heater controller electrically connected to the heater; a gas introduction unit configured to introduce a processing gas into the chamber; and a plasma generation unit configured to generate plasma from the processing gas in the chamber. The substrate support assembly includes: a base having a tank; a movable plate that separates the interior of the tank into a first space and a second space and is configured to be movable along a direction in which the first space and the second space are arranged side by side between the first space and the second space; a substrate support portion on the base; a heat transfer medium supply unit connected to the first space; and an exhaust unit configured to exhaust gas in the second space. The heat transfer medium supply unit includes: a cylinder; a piston that separates the interior of the cylinder into a third space and a fourth space and is configured to be movable along a direction in which the third space and the fourth space are arranged side by side between the third space and the fourth space; a pipe connected between the third space and the first space; and a gas supply unit connected to the fourth space. The third space is configured to be able to store a heat transfer medium. The piston is configured to move so as to reduce the volume of the third space in order to supply the heat transfer medium in the third space to the first space via the pipe. The gas supply unit is configured to supply gas to the fourth space and move the piston so as to reduce the volume of the third space by increasing the volume of the fourth space. The substrate processing method includes: (a) a step of preparing a substrate on the substrate support portion; (b) a step of raising the temperature of the substrate after (a); (c) a step of performing the substrate processing on the substrate after (b); and (d) a step of lowering the temperature of the substrate after (c). The step (b) includes a step of supplying power from the heater controller to the heater in a state where the heat transfer medium is not supplied to the first space.The above (c) includes: (c1) a step of supplying the processing gas from the gas introduction part into the chamber; (c2) a step of generating plasma from the processing gas in the chamber by the plasma generation part; The above (d) includes: (d1) a step of the gas supply part supplying the gas to the fourth space; (d2) a step of stopping the supply of the gas to the fourth space by the gas supply part after the above (d1). A substrate processing method.

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