Substrate support and plasma processing apparatus

Abstract

Disclosed is a substrate support comprising a base, an electrostatic chuck, a sleeve, a first member, and a second member. The electrostatic chuck is provided on the base, has a first surface and a second surface including a substrate support surface, and provides a first through-hole penetrating from the first surface to the second surface. The sleeve is fixed in the base and defines a second through-hole that is aligned and in communication with the first through-hole. The sleeve includes a fixing part that partially defines an inner surface thereof. The first member is disposed in the first through-hole. The second member has a columnar shape, is disposed in at least the second through-hole, and supports the first member. The second member includes a fixed part fixed by the fixing part. In a lateral direction orthogonal to the central axis of both the sleeve and the second member, the width of the fixing part is smaller than the width of the fixed part.

Description

Substrate support and plasma processing apparatus

[0001] SUMMARY Exemplary embodiments of the present disclosure relate to a substrate support and a plasma processing apparatus.

[0002] A plasma processing apparatus is used for plasma processing of a substrate. The plasma processing apparatus described in Patent Document 1 below includes a plasma processing chamber and a substrate support. The substrate support is provided within the plasma processing chamber. The substrate support includes an electrostatic chuck having a first through-hole formed therein, a base having a second through-hole formed therein that communicates with the first through-hole, and an embedding member disposed inside the first through-hole and the second through-hole.

[0003] Japanese Patent Application Laid-Open No. 2019-149422

[0004] The present disclosure provides techniques for suppressing electrical discharge between a substrate and an electrostatic chuck.

[0005] In one exemplary embodiment, a substrate support is provided. The substrate support includes a base, an electrostatic chuck, a sleeve, a first member, and a second member. The electrostatic chuck is mounted on the base. The electrostatic chuck has a first surface including a substrate support surface and a second surface opposite the first surface, and a first through-hole extending from the first surface to the second surface. The sleeve has a cylindrical shape and is fixed within the base. The sleeve defines a second through-hole as its inner hole, aligned with and communicating with the first through-hole. The first member is disposed within the first through-hole. The second member has a columnar shape and is disposed within at least the second through-hole to support the first member. The first member and the second member form gas flow paths within the first through-hole and the second through-hole. The sleeve includes a fixing portion that partially defines an inner surface thereof. The second member includes a fixed portion that is fixed by the fixing portion. The width of the fixing portion in a lateral direction perpendicular to the central axes of both the sleeve and the second member is smaller than the width of the fixed portion in the lateral direction.

[0006] According to one exemplary embodiment, electrical discharge between a substrate and an electrostatic chuck is suppressed.

[0007] FIG. 1 is a schematic diagram of a plasma processing system according to an exemplary embodiment. FIG. 2 is a schematic diagram of a plasma processing apparatus according to an exemplary embodiment. FIG. 3 is a partially enlarged cross-sectional view of a substrate support according to an exemplary embodiment. FIG. 4 is a partially enlarged cross-sectional view of a first member and an electrostatic chuck according to an exemplary embodiment. FIG. 5 is a perspective view of a portion of a second member according to an exemplary embodiment. FIG. 6 is a partially enlarged cross-sectional view of a substrate support according to another exemplary embodiment. FIG. 7 is a partially enlarged cross-sectional view of a substrate support according to yet another exemplary embodiment. FIG. 8 is a cross-sectional view of a second member and a sleeve according to yet another exemplary embodiment. FIG. 9 is a partially enlarged cross-sectional view of a substrate support according to yet another exemplary embodiment. FIG. 10 is a partially enlarged cross-sectional view of a substrate support according to yet another exemplary embodiment. FIG. 11 is a partially enlarged cross-sectional view of a substrate support according to yet another exemplary embodiment. FIG. 12 is a partially enlarged cross-sectional view of a substrate support according to yet another exemplary embodiment. FIG. 13 is a partially enlarged cross-sectional view of a substrate support according to yet another exemplary embodiment. FIG. 14 is a partial enlarged cross-sectional view illustrating a substrate support according to yet another exemplary embodiment.

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings, in which the same or corresponding parts are designated by the same reference numerals throughout the drawings.

[0009] FIG. 1 is a diagram illustrating an example of the configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust port is connected to an exhaust system 40 (described later). The substrate support 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0010] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), or surface wave plasma (SWP). Various types of plasma generators may be used, including alternating current (AC) plasma generators and direct current (DC) plasma generators. In one embodiment, the AC signal (AC power) used in the AC plasma generator has a frequency in the range of 100 kHz to 10 GHz. Thus, AC signals include radio frequency (RF) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0011] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. This program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read-only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0012] The following describes a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 2 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0013] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0014] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0015] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that the annular region 111b may also be provided by another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF power supply 31 and / or a DC power supply 32, which will be described later, may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal, which will be described later, is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Furthermore, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0016] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0017] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the backside of the substrate W and the central region 111a.

[0018] The showerhead 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0019] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0020] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0021] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0022] The second RF generator 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0023] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to the at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to the at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0024] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating the sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0025] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0026] A substrate support according to an exemplary embodiment will be described below with reference to Figures 3 to 5. Figure 3 is a partially enlarged cross-sectional view showing a substrate support according to an exemplary embodiment. Figure 4 is a partially enlarged cross-sectional view showing a configuration of a first member and an electrostatic chuck according to an exemplary embodiment. Figure 5 is a perspective view showing a portion of a second member according to an exemplary embodiment.

[0027] The substrate support 11 shown in Fig. 3 can be used as the substrate support 11 of the plasma processing apparatus 1. As shown in Fig. 3, the substrate support 11 includes a base 1110, an electrostatic chuck 1111, a sleeve 50, a first member 60, and a second member 70.

[0028] The base 1110 may be formed from a metal such as aluminum. Alternatively, the base 1110 may be formed from a brittle material such as ceramic. The base 1110 may be formed from a conductive ceramic. Examples of conductive ceramic include a material in which conductive particles such as metal are mixed with a ceramic matrix, or a metal matrix composite (MMC) in which ceramic is mixed with a metal matrix. The metal constituting the base 1110 may include at least one selected from the group consisting of silicon, aluminum, titanium, tungsten, and molybdenum. The ceramic constituting the base 1110 may include at least one selected from the group consisting of aluminum oxide, aluminum nitride, and silicon carbide.

[0029] The electrostatic chuck 1111 is provided on a base 1110. The electrostatic chuck 1111 is bonded to the upper surface of the base 1110. In this embodiment, the electrostatic chuck 1111 is bonded to the base 1110 by a bonding material A. The bonding material A may include, for example, an organic adhesive. The electrostatic chuck 1111 may also be bonded to the base 1110 by metal bonding using a metal such as a brazing material.

[0030] 3, the electrostatic chuck 1111 has a first surface 1111c and a second surface 1111d. The first surface 1111c includes a substrate support surface (or a central region 111a), i.e., a surface that supports a substrate W placed thereon. The second surface 1111d is a surface located opposite to the first surface 1111c. The second surface 1111d is located between the first surface 1111c and the base 1110. The second surface 1111d is bonded to the upper surface of the base 1110 by a bonding material A.

[0031] The electrostatic chuck 1111 provides a first through-hole H1. The first through-hole H1 penetrates the electrostatic chuck 1111 from the first surface 1111c to the second surface 1111d. The first through-hole H1 may penetrate the electrostatic chuck 1111 in a vertical direction. The first through-hole H1 may have, for example, a circular cross-sectional shape. Note that the substrate support 11 may provide a plurality of first through-holes H1.

[0032] The sleeve 50 is fixed to the base 1110. The sleeve 50 is made of an insulating material and has a cylindrical shape. In the example shown in FIG. 3, the sleeve 50 is a single member having a cylindrical shape. The sleeve 50 defines a second through hole H2 as its inner hole. That is, the inner surface of the sleeve 50 defines the second through hole H2 as the inner hole of the sleeve 50. The second through hole H2 is aligned with the first through hole H1 and communicates with the first through hole H1. The sleeve 50 may be fixed to the base 1110 by a bonding layer. Note that the sleeve 50 may be detachably attached to the base 1110 without a bonding layer.

[0033] 3, the width of the second through hole H2 may be larger than the width of the first through hole H1. The width of the second through hole H2 is determined by the length of the second through hole H2 in a horizontal direction perpendicular to the central axis of the second through hole H2, and the width of the first through hole H1 is determined by the length of the first through hole H1 in a horizontal direction perpendicular to the central axis of the first through hole H1. The width of the second through hole H2 may be smaller than or equal to the width of the first through hole H1.

[0034] The first member 60 is disposed within the first through-hole H1. The first member 60 has a columnar shape. The first member 60 may have a cylindrical shape. The length of the first member 60 in the vertical direction is shorter than the length of the electrostatic chuck 1111 in the vertical direction. The width of the first member 60 in the horizontal direction is smaller than the width of the first through-hole H1 in the horizontal direction. The first member 60 is formed of silicon carbide or ceramic. The length of the first member 60 in the vertical direction and the length of the electrostatic chuck 1111 in the vertical direction are determined by their lengths in the direction along the central axis of the first member 60. Furthermore, the width of the first member 60 in the horizontal direction and the width of the first through-hole H1 in the horizontal direction are determined by their lengths in the direction along the central axis of the first member 60.

[0035] As described above, the width of the first member 60 in the lateral direction is smaller than the width of the first through hole H1 in the lateral direction. Therefore, as shown in FIG. 4 , a first gap is generated between the first member 60 and the inner surface of the electrostatic chuck 1111 that defines the first through hole H1. That is, the first member 60 forms a first gap between the first member 60 and the inner surface of the electrostatic chuck 1111 that defines the first through hole H1. The first member 60 forms a first gap between the first member 60 and the inner surface of the electrostatic chuck 1111 around its entire periphery. The first gap extends from the upper end to the lower end of the side surface of the first member 60.

[0036] The second member 70 is disposed below the first member 60 and supports the first member 60. The second member 70 has a columnar shape and is disposed in at least the second through-hole H2. In the example shown in Fig. 3, the second member 70 is disposed in the first through-hole H1 and the second through-hole H2. The second member 70 may include a first rod 71 and a second rod 72.

[0037] The first rod 71 supports the second rod 72 within the second through hole H2. The first rod 71 has a columnar shape and is disposed within the second through hole H2. The first rod 71 is fixed to the sleeve 50. This fixes the position of the first rod 71 within the second through hole H2. Details of the fixing of the first rod 71 will be described later. The first rod 71 forms a second gap between the first rod 71 and the inner surface of the sleeve 50 that defines the second through hole H2. The first rod 71 may be formed from ceramic.

[0038] The second rod 72 has a columnar shape and extends between the first rod 71 and the first member 60. The second rod 72 extends from the first through-hole H1 to the second through-hole H2. The second rod 72 may be made of polytetrafluoroethylene. The second rod 72 supports the first member 60 within the first through-hole H1.

[0039] The second rod 72 may include a first portion 72A and a second portion 72B. The first portion 72A extends from within the first through-hole H1 to within the second through-hole H2. The first portion 72A contacts the lower end of the first member 60 within the first through-hole H1 and supports the first member 60.

[0040] As shown in Fig. 5, the side surface of the first portion 72A defines one or more grooves G1. The one or more grooves G1 extend along the side surface of the first portion 72A from the upper end to the lower end of the side surface of the first portion 72A. As shown in Fig. 5, multiple grooves G1 may extend along the side surface of the first portion 72A or may be arranged in the circumferential direction. The number of multiple grooves G1 is, for example, "3."

[0041] The one or more grooves G1 create one or more third gaps between the side surface of the first portion 72A and the inner surface of the electrostatic chuck 1111 that defines the first through-hole H1. The one or more third gaps extend from the upper end to the lower end of the side surface of the first portion 72A.

[0042] The second portion 72B supports the first portion 72A within the second through-hole H2. The second portion 72B is disposed only within the second through-hole H2 and is continuous with the first portion 72A. Similar to the first portion 72A, the side surface of the second portion 72B also defines one or more grooves G2 extending from its upper end to its lower end. The one or more grooves G2 create one or more fourth gaps between the second portion 72B and the inner surface of the sleeve 50 that defines the second through-hole H2. The one or more fourth gaps extend from the upper end to the lower end of the side surface of the second portion 72B.

[0043] The one or more first gaps, the second gaps, the one or more third gaps, and the one or more fourth gaps form a gas flow path F. That is, the gas flow path F extends across the first through-hole H1 and the second through-hole H2.

[0044] The gas flow path F is provided to supply a heat transfer gas from a heat transfer gas supply unit (not shown) to between the first surface 1111c of the electrostatic chuck 1111 and the substrate W. The heat transfer gas includes, for example, helium gas.

[0045] The fixation of the first rod 71 to the sleeve 50 will be described in more detail below. As shown in FIG. 3 , the sleeve 50 has a fixing portion 51. The fixing portion 51 is a portion for fixing the first rod 71 to the sleeve 50. The fixing portion 51 partially defines the inner surface of the sleeve 50. The fixing portion 51 may define the inner surface of a portion of the sleeve 50 including the lower end of the sleeve 50. The fixing portion 51 includes an internal thread. More specifically, the inner surface of the sleeve 50 defined by the fixing portion 51 includes an internal thread.

[0046] The second member 70 has a fixed portion 73. The fixed portion 73 is a portion that is fixed to the sleeve 50 by the fixing portion 51. The width of the fixing portion 51 in the lateral direction is smaller than the width of the fixed portion 73 in the lateral direction. Here, the widths of the fixing portion 51 and the fixed portion 73 in the lateral direction are determined by the lengths of both the sleeve 50 and the second member 70 in a direction perpendicular to the central axes.

[0047] In the example shown in FIG. 3 , the first rod 71 of the second member 70 includes a fixed portion 73. More specifically, the first rod 71 includes a fixed portion 73 and a main body portion 74. The main body portion 74 supports the second rod 72 disposed above it in the second through-hole H2. The fixed portion 73 and the main body portion 74 are continuous. The width of the main body portion 74 in the horizontal direction is smaller than the width of the fixed portion 73 in the horizontal direction. Note that the width of the main body portion 74 in the horizontal direction may be larger than or equal to the width of the fixed portion 73 in the horizontal direction.

[0048] The outer surface of the fixed portion 73 includes a male thread. The male thread of the fixed portion 73 is screwed into the female thread of the fixing portion 51. Therefore, the width of the fixing portion 51 in the lateral direction is partially smaller than the width of the fixed portion 73 in the lateral direction.

[0049] When the fixing portion 51 includes a female thread, the width of the fixing portion 51 in the lateral direction is determined by the minimum distance between the inner surfaces of the sleeve 50 defined by the fixing portion 51 in a direction perpendicular to the central axes of both the sleeve 50 and the second member 70. This minimum distance between the inner surfaces of the sleeve 50 defined by the fixing portion 51 is also called the inner diameter of the female thread included in the fixing portion 51. Therefore, when the fixing portion 51 includes a female thread, the width of the fixing portion 51 in the lateral direction is determined by the inner diameter of the female thread (the smallest diameter of the female thread).

[0050] When the fixed portion 73 includes a male thread, the width of the fixed portion 73 in the lateral direction is determined by the maximum diameter of the male thread. Such a maximum diameter of the male thread is also called the nominal diameter. Therefore, when the fixed portion 73 includes a male thread, the width of the fixed portion 73 in the lateral direction is determined by the nominal diameter of the male thread.

[0051] In the substrate support 11, the first member 60 and the second member 70 are disposed in the first through-hole H1 and the second through-hole H2. The first member 60 and the second member 70 provide a gas flow path F for the heat transfer gas in the first through-hole H1 and the second through-hole H2, while suppressing discharge in the first through-hole H1 and the second through-hole H2.

[0052] Furthermore, in the substrate support 11, the fixed portion 73 is fixed by the fixing portion 51, so even if the second member 70 undergoes thermal contraction, an increase in the distance between the first member 60 and the back surface of the substrate W is suppressed. Therefore, the substrate support 11 suppresses discharge between the substrate W and the electrostatic chuck 1111.

[0053] Next, a substrate support 11A according to another exemplary embodiment will be described with reference to Fig. 6. Fig. 6 is a partially enlarged cross-sectional view showing a substrate support according to another exemplary embodiment. The following description will focus on differences between the substrate support 11A shown in Fig. 6 and the substrate support 11 according to the above-described embodiment.

[0054] The substrate support 11A has an electrostatic chuck 1111A, a first member 60A, and a second member 70A instead of the electrostatic chuck 1111, the first member 60, and the second member 70.

[0055] The electrostatic chuck 1111A includes a countersunk hole that defines a first through-hole H1. The first member 60A may include, for example, a small diameter portion and a large diameter portion that is continuous with the small diameter portion. As shown in FIG. 6 , the first member 60A abuts against a surface that defines the countersunk hole. This determines the position of the first member 60A within the first through-hole H1.

[0056] The length of the first member 60A may be equal to the length of the electrostatic chuck 1111A. Therefore, in the substrate support 11A, only the first member 60A may be disposed within the first through-hole H1.

[0057] The second member 70A may be a single member. The second member 70A may have only a first rod 71. In the substrate support 11A, the first rod 71 supports the first member 60. In the substrate support 11A, the second member 70A, i.e., the first rod 71, is made of ceramic.

[0058] The first member 60A provides a flow path that extends spirally. This flow path passes through the side surface and interior of the first member 60A and communicates with the gap between the first rod 71 and the inner surface of the sleeve 50 that provides the second through-hole H2, forming a gas flow path F. In the substrate support 11A, the manner in which the fixed portion 73 is fixed to the fixing portion 51 is the same as in the substrate support 11, and therefore a description thereof will be omitted.

[0059] Next, a substrate support 11B according to yet another exemplary embodiment will be described with reference to FIGS. 7 and 8. FIG. 7 is a partially enlarged cross-sectional view showing a substrate support according to yet another exemplary embodiment. FIG. 8 is a cross-sectional view showing a configuration of a second member and an electrostatic chuck according to yet another exemplary embodiment. The following description of the substrate support 11B shown in FIG. 7 will mainly focus on differences from the substrate support 11 according to the above-described embodiment.

[0060] The substrate support 11B has a sleeve 50B, a first member 60B, and a second member 70B instead of the sleeve 50, the first member 60, and the second member 70.

[0061] The sleeve 50B includes a first sleeve 501B and a second sleeve 502B. The first sleeve 501B is fixed to the base 1110. The first sleeve 501B may be fixed to the base 1110 by a bonding layer. Alternatively, the first sleeve 501B may be detachably attached to the base 1110 without a bonding layer. The first sleeve 501B has a columnar shape. The second sleeve 502B is disposed in the inner hole of the first sleeve 501B and fixed to the first sleeve 501B. That is, the sleeve 50B has a two-layer structure formed from two columnar layers. The first sleeve 501B and the second sleeve 502B may be screwed together at their lower ends. The first sleeve 501B and the second sleeve 502B may be bonded to each other at their lower ends, for example, by an adhesive.

[0062] The sleeve 50B also provides a second through-hole H2 as its inner hole, similar to the sleeve 50. More specifically, in the sleeve 50B, a portion of the inner surface of the first sleeve 501B and the entire inner surface of the second sleeve 502B define the second through-hole H2.

[0063] The first member 60B has a first portion 60B1 and a second portion 60B2. The first portion 60B1 has a columnar shape. The width of the first portion 60B1 in the lateral direction is smaller than the width of the first through-hole H1 in the lateral direction. Therefore, a gap is generated between the first portion 60B1 and the inner surface of the electrostatic chuck 1111 that provides the first through-hole H1.

[0064] The second portion 60B2 extends downward from the first portion 60B1. The second portion 60B2 has a columnar shape, and its width in the lateral direction is smaller than that of the first portion 60B1.

[0065] The second member 70B is a single member and includes a fixed portion 73 and a support portion 75. The second member 70B may be made of polytetrafluoroethylene.

[0066] The support portion 75 has a columnar shape and extends upward from the fixed portion 73. The support portion 75 is disposed within the first through-hole H1. The support portion 75 provides a groove G3 at its upper end. The second portion 60B2 of the first member 60B is fitted into the groove G3. In this way, the first member 60B is supported by the support portion 75 within the first through-hole H1.

[0067] In the substrate support 11B, the fixing portion 51 has a small diameter portion 51A and a large diameter portion 51B. The small diameter portion 51A is provided by the second sleeve 502B, and the large diameter portion 51B is provided by the first sleeve 501B. The small diameter portion 51A has a diameter smaller than the width of the fixing portion 73 in the lateral direction. The large diameter portion 51B has a diameter larger than the width of the fixing portion 73 in the lateral direction and is provided on the small diameter portion 51A. The inner surfaces of the small diameter portion 51A and the large diameter portion 51B respectively define a portion of the second through hole H2.

[0068] In the substrate support 11B, the fixed portion 73 is disposed above the small diameter portion 51A and inside the large diameter portion 51B. Furthermore, in the substrate support 11B, the fixed portion 73 is sandwiched between the small diameter portion 51A and the electrostatic chuck 1111. As shown in FIG. 7 , the bonding material A does not need to be disposed between the fixed portion 73 and the electrostatic chuck 1111.

[0069] Furthermore, in the substrate support 11B, the side surface of the support portion 75 defines one or more grooves (not shown). The one or more grooves extend from the upper end to the lower end of the side surface of the support portion 75. For example, the side surface of the support portion 75 may define a plurality of grooves as one or more grooves. The plurality of grooves may be arranged along the circumferential direction. The number of the plurality of grooves is, for example, "3."

[0070] The one or more grooves defined by the support portion 75 form a gap between the side surface of the support portion 75 and the inner surface of the electrostatic chuck 1111 that defines the first through-hole H1. This gap extends from the upper end to the lower end of the support portion 75.

[0071] The fixed portion 73 is continuous with the support portion 75 and extends downward from the support portion 75. The side surface of the fixed portion 73 defines one or more grooves G4. The one or more grooves G4 extend from the upper end to the lower end of the side surface of the fixed portion 73. The side surface of the fixed portion 73 may define multiple grooves G4. The multiple grooves G4 may be arranged along the circumferential direction. The number of multiple grooves G4 is, for example, "3."

[0072] 8, one or more grooves G4 defined by the fixed portion 73 form a gap between the side surface of the fixed portion 73 and the inner surface of the large diameter portion 51B defining the second through hole H2. This gap extends from the upper end to the lower end of the fixed portion 73.

[0073] In the substrate support 11B, the gap between the first portion 60B1 and the inner surface of the electrostatic chuck 1111 and the one or more grooves in the support portion 75 extend between the side surfaces of the first portion 60B1 and the support portion 75 and the inner surface of the electrostatic chuck 1111. Therefore, in the substrate support 11B, the gap between the first portion 60B1 and the inner surface of the electrostatic chuck 1111 and the one or more grooves in the support portion 75 form a gas flow path F in the first through-hole H1. Similarly, in the substrate support 11B, one or more grooves G4 extend between the side surface of the fixed portion 73 and the inner surface of the large diameter portion 51B and form a gas flow path F in the second through-hole H2.

[0074] In the substrate support 11B, the small diameter portion 51A supports the fixed portion 73 from below, and the fixed portion 73 is sandwiched between the small diameter portion 51A and the electrostatic chuck 1111, thereby fixing the fixed portion 73 to the fixing portion 51. This prevents the second member 70 from falling off the sleeve 50 even if thermal contraction of the second member 70 occurs. Therefore, change in the position of the first member 60 supported by the second member 70 within the first through-hole H1 is suppressed. Therefore, in the substrate support 11B, discharge between the substrate W and the electrostatic chuck 1111 is suppressed.

[0075] Next, a substrate support 11C according to yet another exemplary embodiment will be described with reference to Fig. 9. Fig. 9 is a partially enlarged cross-sectional view showing a substrate support according to yet another exemplary embodiment. The following description of the substrate support 11C shown in Fig. 9 will mainly focus on differences from the substrate support 11B described above.

[0076] 9, in the substrate support 11C, the support portion 75 is disposed in the first through-hole H1 and the second through-hole H2. More specifically, in the substrate support 11C, the support portion 75 extends from the first through-hole H1 to the second through-hole H2.

[0077] In the substrate support 11C, the fixed portion 73 is sandwiched between the small diameter portion 51A and the first sleeve 501B (or the upper end portion thereof). As a result, the fixed portion 73 is fixed to the fixing portion 51.

[0078] In the substrate support 11C, even if thermal contraction of the second member 70 occurs, the second member 70 is prevented from falling off the sleeve 50. Therefore, in the substrate support 11C, discharge between the substrate W and the electrostatic chuck 1111 is suppressed.

[0079] Next, a substrate support 11D according to yet another exemplary embodiment will be described with reference to Fig. 10. Fig. 10 is a partially enlarged cross-sectional view showing a substrate support according to yet another exemplary embodiment. The following description of the substrate support 11D shown in Fig. 10 will mainly focus on differences from the above-described substrate support 11B.

[0080] The substrate support 11D includes a sleeve 50D and a second member 70D instead of the sleeve 50B and the second member 70B. As shown in Fig. 10, the sleeve 50D includes a first sleeve 501D and a second sleeve 502D, similar to the sleeve 50B. In the substrate support 11D, the second sleeve 502D includes a small diameter portion 51A and a large diameter portion 51B.

[0081] The inner surface of the second sleeve 502D defines a groove G5. Specifically, the groove G5 is formed on the small diameter portion 51A and inside the large diameter portion 51B.

[0082] The second member 70D has a fixed portion 73D in addition to the support portion 75. The fixed portion 73D is continuous with the support portion 75 and extends downward from the support portion 75. The fixed portion 73D is configured to be expandable and contractible in the radial direction relative to the central axes of both the sleeve 50D and the second member 70D. The fixed portion 73D may be divided into multiple portions by two intersecting or perpendicular split grooves so that it can expand and contract in the radial direction. The multiple portions of the fixed portion 73D are guided in a contracted state to the groove G5 and elastically expand within the groove G5. As a result, the fixed portion 73D is positioned and fixed above the small diameter portion 51A and inside the large diameter portion 51B. A bonding material A does not need to be disposed between the fixed portion 73D and the electrostatic chuck 1111.

[0083] Furthermore, in the substrate support 11D, similar to the substrate support 11B, the gap between the first portion 60B1 and the inner surface of the electrostatic chuck 1111 and the groove in the support portion 75 extend between the side surfaces of the first portion 60B1 and the support portion 75 and the inner surface of the electrostatic chuck 1111. Therefore, in the substrate support 11D, the gap between the first portion 60B1 and the inner surface of the electrostatic chuck 1111 and the groove in the support portion 75 form a gas flow path F in the first through-hole H1. Also, in the substrate support 11D, the two split grooves in the fixed portion 73D form a gas flow path F in the second through-hole H2.

[0084] In the substrate support 11D as well, even if thermal contraction of the second member 70 occurs, the second member 70 is prevented from falling off the sleeve 50. Therefore, in the substrate support 11D as well, discharge between the substrate W and the electrostatic chuck 1111 is suppressed.

[0085] Next, a substrate support 11E according to yet another exemplary embodiment will be described with reference to Fig. 11. Fig. 11 is a cross-sectional view showing a substrate support according to yet another exemplary embodiment. The following description of the substrate support 11E shown in Fig. 11 will mainly focus on differences from the substrate support 11B described above.

[0086] The substrate support 11E includes a sleeve 50E and a second member 70E instead of the sleeve 50B and the second member 70B. As shown in FIG. 11 , in the substrate support 11E, the sleeve 50E is made of a single member and has a single-layer structure. The sleeve 50E may be fixed to the base 1110 by a bonding layer (not shown). Note that the sleeve 50E may be detachably attached to the base 1110 without a bonding layer.

[0087] The sleeve 50E has a fixing portion 51E. In the substrate support 11E, the fixing portion 51E defines the inner surface of a portion of the sleeve 50E including the upper end of the sleeve 50E. In addition, in the substrate support 11E, the fixing portion 51E includes a female thread. More specifically, the female thread is provided on the inner surface of the sleeve 50E defined by the fixing portion 51E.

[0088] The second member 70E has a fixed portion 73E in addition to the support portion 75. The fixed portion 73E is continuous with the support portion 75. The fixed portion 73E includes a male thread that is threaded into the female thread of the fixing portion 51E. More specifically, the male thread is provided on the outer surface of the fixed portion 73E. The male thread of the fixed portion 73E is threaded into the female thread of the fixing portion 51E, thereby fixing the second member 70E to the sleeve 50E. The bonding material A does not need to be disposed between the fixed portion 73E and the electrostatic chuck 1111.

[0089] When the fixing portion 51E includes a female thread, the width of the fixing portion 51E in the lateral direction is determined by the minimum distance between the inner surfaces of the sleeve 50E defined by the fixing portion 51E in the direction perpendicular to the central axes of both the sleeve 50E and the second member 70E. In other words, when the fixing portion 51E includes a female thread, the width of the fixing portion 51E in the lateral direction is determined by the inner diameter of the female thread (the minimum diameter of the female thread).

[0090] When the fixed portion 73E includes a male thread, the width of the fixed portion 73E in the lateral direction is determined by the maximum diameter of the male thread. In other words, when the fixed portion 73E includes a male thread, the width of the fixed portion 73E in the lateral direction is determined by the nominal diameter of the male thread.

[0091] In the substrate support 11E, the gap between the first portion 60B1 and the inner surface of the electrostatic chuck 1111 and the groove in the support portion 75 extend between the side surfaces of the first portion 60B1 and the support portion 75 and the inner surface of the electrostatic chuck 1111. Therefore, in the substrate support 11E, the gap between the first portion 60B1 and the inner surface of the electrostatic chuck 1111 and the groove in the support portion 75 form a gas flow path F in the first through-hole H1. Also, in the substrate support 11E, the gap between the male thread of the fixed portion 73E and the female thread of the fixing portion 51E forms a gas flow path F in the second through-hole H2.

[0092] In the substrate support 11E as well, even if thermal contraction of the second member 70 occurs, the second member 70 is prevented from falling off the sleeve 50. Therefore, in the substrate support 11E as well, discharge between the substrate W and the electrostatic chuck 1111 is suppressed.

[0093] Next, a substrate support 11F according to yet another exemplary embodiment will be described with reference to Fig. 12. Fig. 12 is a cross-sectional view showing a substrate support according to yet another exemplary embodiment. The following description of the substrate support 11F shown in Fig. 12 will mainly focus on differences from the substrate support 11B described above.

[0094] The substrate support 11F includes a sleeve 50F and a second member 70F instead of the sleeve 50B and the second member 70B.

[0095] 12, in the substrate support 11F, the sleeve 50F is a single member having a single-layer structure. Therefore, in the substrate support 11F, the sleeve 50F has a small diameter portion 51A and a large diameter portion 51B. The inner surface of the sleeve 50F defines a groove G5. The groove G5 is provided on the small diameter portion 51A and inside the large diameter portion 51B.

[0096] The second member 70F has a fixed portion 73F and a lower portion 76 in addition to the support portion 75. In the substrate support 11F, the fixed portion 73F is continuous with the support portion 75 and extends downward from the support portion 75. The fixed portion 73F is configured to be expandable and contractible in the radial direction relative to the central axes of both the sleeve 50F and the second member 70F. More specifically, the fixed portion 73F includes a plurality of claws 73Fa that protrude from its side surface to the outside of the second member 70F. The plurality of claws 73Fa are arranged along the circumferential direction on the side surface of the fixed portion 73F. The number of the plurality of claws 73Fa is, for example, four.

[0097] The plurality of claws 73Fa are configured to be expandable and contractable in the radial direction relative to the central axis. For example, each of the plurality of claws 73Fa may be fixed at its upper end and open at its lower end. In the substrate support 11F, the plurality of claws 73Fa are pushed toward the center of the fixed portion 73F and guided to the groove G5, where they elastically expand within the groove G5 due to their restoring force. The plurality of claws 73Fa are pressed against the large diameter portion 51B due to their restoring force. As a result, the fixed portion 73F is fixed by the fixing portion 51. The bonding material A does not need to be disposed between the fixed portion 73F and the electrostatic chuck 1111.

[0098] The lower portion 76 is continuous with the fixed portion 73F and extends downward from the fixed portion 73F. The width of the lower portion 76 in the lateral direction is equal to or less than the width of the small diameter portion 51A in the lateral direction. Therefore, in the substrate support 11F, the lower portion 76 is laterally sandwiched by the small diameter portion 51A.

[0099] Furthermore, in the substrate support 11F, the side surface of the lower portion 76 defines one or more grooves (not shown). The one or more grooves extend from the upper end to the lower end of the side surface of the lower portion 76. For example, the side surface of the lower portion 76 may define a plurality of grooves as one or more grooves. The plurality of grooves may be arranged along the circumferential direction. The number of the plurality of grooves is, for example, "3."

[0100] The groove defined by the lower portion 76 forms a gap between the side surface of the lower portion 76 and the inner surface of the sleeve 50F that defines the second through-hole H2. This gap is generated from the upper end to the lower end of the side surface of the lower portion 76.

[0101] In the substrate support 11F, the gap between the first portion 60B1 and the inner surface of the electrostatic chuck 1111 and the groove in the support portion 75 extend between the side surfaces of the first portion 60B1 and the support portion 75 and the inner surface of the electrostatic chuck 1111. Therefore, in the substrate support 11F, the gap between the first portion 60B1 and the inner surface of the electrostatic chuck 1111 and the groove in the support portion 75 form a gas flow path F in the first through-hole H1. Also, in the substrate support 11F, the space between the plurality of claws 73Fa and the gap between the groove in the lower portion 76 and the inner surface of the sleeve 50F form a gas flow path F in the second through-hole H2.

[0102] In the substrate support 11F as well, even if thermal contraction of the second member 70 occurs, the second member 70 is prevented from falling off the sleeve 50. Therefore, in the substrate support 11F as well, discharge between the substrate W and the electrostatic chuck 1111 is suppressed.

[0103] Next, a substrate support 11G according to yet another exemplary embodiment will be described with reference to Fig. 13. Fig. 13 is a cross-sectional view showing a substrate support according to yet another exemplary embodiment. The following description of the substrate support 11G shown in Fig. 13 will mainly focus on differences from the substrate support 11F described above.

[0104] The substrate support 11G includes a sleeve 50G instead of the sleeve 50F. Unlike the sleeve 50F, the sleeve 50G has a two-layer structure. That is, the sleeve 50G includes a first sleeve 501G and a second sleeve 502G. In the substrate support 11G, the first sleeve 501G is fixed to the base 1110. The first sleeve 501G may be fixed to the base 1110 by a bonding layer (not shown). Note that the first sleeve 501G may be detachably attached to the base 1110 without a bonding layer. The first sleeve 501G has a cylindrical shape.

[0105] The second sleeve 502G is disposed in an inner hole of the first sleeve 501G and fixed to the first sleeve 501G. In the substrate support 11G, the first sleeve 501G and the second sleeve 502G may be fastened to each other at their lower ends by screws. The first sleeve 501G and the second sleeve 502G may be joined to each other at their lower ends by a joining material such as an adhesive.

[0106] In the substrate support 11G, the small diameter portion 51A is provided by the second sleeve 502G, and the large diameter portion 51B is provided by the first sleeve 501G.

[0107] In the substrate support 11G, the small diameter portion 51A supports the fixed portion 73F from below, and the fixed portion 73F is pressed against the large diameter portion 51B by the restoring force of the multiple claws 73Fa, thereby fixing the fixed portion 73F to the fixing portion 51. Furthermore, in the substrate support 11G, the lower portion 76 is also fixed to the fixing portion 51 by being sandwiched laterally by the small diameter portion 51A. In the substrate support 11G, as in the substrate support 11F, the bonding material A does not need to be disposed between the fixed portion 73F and the electrostatic chuck 1111.

[0108] In the substrate support 11G, the gap between the first portion 60B1 and the inner surface of the electrostatic chuck 1111 and the groove in the support portion 75 extend between the side surfaces of the first portion 60B1 and the support portion 75 and the inner surface of the electrostatic chuck 1111. Therefore, in the substrate support 11G, the gap between the first portion 60B1 and the inner surface of the electrostatic chuck 1111 and the groove in the support portion 75 form a gas flow path F in the first through-hole H1. In addition, in the substrate support 11F, the spaces between the plurality of claws 73Fa and the groove in the lower portion 76 extend between the second member 70F and the inner surface of the second sleeve 502G to form a gas flow path F in the second through-hole H2.

[0109] In the substrate support 11G as well, even if thermal contraction of the second member 70 occurs, the second member 70 is prevented from falling off the sleeve 50G. Therefore, in the substrate support 11G as well, discharge between the substrate W and the electrostatic chuck 1111 is suppressed.

[0110] Next, a substrate support 11H according to yet another exemplary embodiment will be described with reference to Fig. 14. Fig. 14 is a cross-sectional view showing a substrate support according to yet another exemplary embodiment. The substrate support 11H shown in Fig. 14 will be described mainly focusing on differences from the substrate support 11 described above.

[0111] In the substrate support 11, the fixed portion 73 and the main body portion 74 are continuous, but in the substrate support 11H, the fixed portion 73 and the main body portion 74 are not continuous. That is, in the substrate support 11H, the fixed portion 73 and the main body portion 74 are configured as separate members. The main body portion 74 may be sandwiched between the fixed portion 73 and the second rod 72. When the main body portion 74 is sandwiched between the fixed portion 73 and the second rod 72, the main body portion 74 may support the second rod 72 disposed thereon within the second through-hole H2, and the fixed portion 73 may support the main body portion 74 disposed thereon. The main body portion 74 and the fixed portion 73 may be joined to each other. When the main body portion 74 and the fixed portion 73 are joined to each other, the main body portion 74 may be press-fitted into the fixed portion 73.

[0112] When the fixed portion 73 and the main body portion 74 are configured as separate members, the fixed portion 73 and the main body portion 74 may be formed from different materials. In the substrate support 11H, the fixed portion 73 may be formed from a resin. The resin forming the fixed portion 73 may be, for example, polytetrafluoroethylene. The main body portion 74 may be formed from a ceramic. The ceramic forming the main body portion 74 may be, for example, alumina.

[0113] Although various exemplary embodiments have been described above, the present invention is not limited to the above-described exemplary embodiments, and various additions, omissions, substitutions, and modifications may be made. Furthermore, elements in different embodiments may be combined to form other embodiments.

[0114] Various exemplary embodiments included in the present disclosure are now described in [E1] to [E14] below.

[0115] [E1] An electrostatic chuck comprising: a base; an electrostatic chuck provided on the base, the electrostatic chuck having a first surface including a substrate support surface and a second surface located opposite the first surface, the electrostatic chuck providing a first through hole penetrating from the first surface to the second surface; a cylindrical sleeve fixed within the base, the sleeve defining as an inner hole a second through hole aligned with the first through hole and communicating with the first through hole; a first member disposed within the first through hole; and a columnar second member supporting the first member, the second member disposed at least within the second through hole, wherein the first member and the second member form gas flow paths within the first through hole and the second through hole, the sleeve including a fixing portion partially defining an inner surface thereof, and the second member including a fixed portion fixed by the fixing portion, a width of the fixing portion in a lateral direction perpendicular to central axes of both the sleeve and the second member is smaller than a width of the fixed portion in the lateral direction.

[0116] [E2] The substrate support according to E1, wherein the fixing portion includes a female screw, and the fixed portion includes a male screw that is screwed into the female screw.

[0117] [E3] The substrate support according to E2, wherein the second member includes: a first rod having a columnar shape; and a second rod having a columnar shape and extending between the first rod and the first member, and the first rod includes the fixed portion.

[0118] [E4] The substrate support according to E3, wherein the first rod is made of ceramic, and the second rod is made of polytetrafluoroethylene.

[0119] [E5] The substrate support according to E2, wherein the first through hole is a countersunk hole, and the first member abuts against a surface that defines the countersunk hole.

[0120] [E6] The substrate support according to E5, wherein the second member is formed from ceramic.

[0121] [E7] The substrate support described in E1, wherein the fixing portion includes a small diameter portion having a diameter smaller than the width of the fixed portion, and a large diameter portion having a diameter larger than the width of the fixed portion and provided on the small diameter portion, and the fixed portion is arranged on the small diameter portion and inside the large diameter portion.

[0122] [E8] The substrate support according to E7, wherein the fixed portion is sandwiched between the small diameter portion and the electrostatic chuck.

[0123] [E9] The substrate support according to E7, wherein the fixed portion is configured to be expandable and contractible in radial directions relative to the central axis.

[0124] [E10] The substrate support according to E9, wherein the large diameter portion is a groove in the sleeve.

[0125] [E11] The substrate support described in E7, wherein the sleeve includes: a first sleeve having a cylindrical shape; and a second sleeve having a cylindrical shape, disposed within an inner hole of the first sleeve, and fixed to the first sleeve, wherein the small diameter portion is provided by the second sleeve, and the large diameter portion is provided by at least the first sleeve.

[0126] [E12] The substrate support according to any one of E7 to E11, wherein the second member is made of polytetrafluoroethylene.

[0127] [E13] An electrostatic chuck comprising: a base; an electrostatic chuck provided on the base, the electrostatic chuck having a first surface including a substrate support surface and a second surface located opposite the first surface, the electrostatic chuck providing a first through hole penetrating from the first surface to the second surface; a cylindrical sleeve fixed within the base, the sleeve defining as an inner hole a second through hole aligned with the first through hole and communicating with the first through hole; a first member disposed within the first through hole; and a columnar second member supporting the first member, the second member disposed at least within the second through hole, wherein the first member and the second member form gas flow paths within the first through hole and the second through hole, the sleeve including a fixing portion partially defining an inner surface thereof, the second member including a fixed portion fixed by the fixing portion, the fixing portion including a female thread, the fixed portion includes a male screw that is threadedly engaged with the female screw.

[0128] [E14] The substrate support according to E13, wherein the second member includes: a first rod having a columnar shape; and a second rod having a columnar shape and extending between the first rod and the first member, and the first rod includes the fixed portion.

[0129] [E15] The substrate support according to E14, wherein the first rod is made of ceramic, and the second rod is made of polytetrafluoroethylene.

[0130] [E16] The substrate support according to E13, wherein the first through hole is a countersunk hole, and the first member is abutted against a surface that defines the countersunk hole.

[0131] [E17] The substrate support according to E16, wherein the second member is formed from ceramic.

[0132] [E18] The substrate support according to any one of E1 to E17, wherein the first member is formed from silicon carbide or ceramic.

[0133] [E19] A plasma processing apparatus comprising: a plasma processing chamber providing a processing space therein; and a substrate support according to any one of E1 to E18, the substrate support being provided within the plasma processing chamber.

[0134] From the foregoing, it will be understood that various embodiments of the present disclosure have been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the appended claims.

[0135] 1... plasma processing apparatus, 10... plasma processing chamber, 11, 11A to 11G... substrate support, 50, 50B, 50D, 50E, 50F, 50G... sleeve, 501B, 501D, 501G... first sleeve, 502B, 502D, 502G... second sleeve, 51... fixed portion, 51A... small diameter portion, 51B... large diameter portion, 60, 60 A, 60B...first member, 70, 70A, 70B, 70D, 70E, 70F...second member, 73, 73D, 73E, 73F...fixed portion, 1110...base, 1111, 1111A...electrostatic chuck, 1111c...first surface, 1111d...second surface, F...gas flow path, G5...groove, H1...first through hole, H2...second through hole, W...substrate.

Claims

1. An electrostatic chuck comprising: a base; an electrostatic chuck provided on the base, the electrostatic chuck having a first surface including a substrate support surface and a second surface opposite to the first surface, the electrostatic chuck providing a first through hole penetrating from the first surface to the second surface; a cylindrical sleeve fixed within the base, the sleeve defining as its inner hole a second through hole that is aligned with the first through hole and communicates with the first through hole; a first member disposed within the first through hole; and a columnar second member supporting the first member, the second member disposed at least within the second through hole, the first member and the second member forming a gas flow path within the first through hole and the second through hole, the sleeve including a fixing portion partially defining an inner surface thereof, and the second member including a fixed portion fixed by the fixing portion, a width of the fixing portion in a lateral direction perpendicular to central axes of both the sleeve and the second member is smaller than a width of the fixed portion in the lateral direction.

2. The substrate support according to claim 1, wherein the fixing portion includes a female screw, and the fixed portion includes a male screw that is screwed into the female screw.

3. A substrate support as described in claim 2, wherein the second member includes: a first rod having a columnar shape; and a second rod having a columnar shape and extending between the first rod and the first member, and the first rod includes the fixed portion.

4. The substrate support of claim 3, wherein the first rod is formed from a ceramic and the second rod is formed from polytetrafluoroethylene.

5. The substrate support according to claim 2, wherein the first through hole is a countersunk hole, and the first member is abutted against a surface that defines the countersunk hole.

6. The substrate support of claim 5, wherein said second member is formed from a ceramic.

7. A substrate support as described in claim 1, wherein the fixing portion includes a small diameter portion having a diameter smaller than the width of the fixed portion, and a large diameter portion having a diameter larger than the width of the fixed portion and provided on the small diameter portion, and the fixed portion is disposed on the small diameter portion and inside the large diameter portion.

8. The substrate support according to claim 7, wherein the fixed portion is clamped between the small diameter portion and the electrostatic chuck.

9. The substrate support according to claim 7, wherein the fixed portion is configured to be expandable and contractable in radial directions relative to the central axis.

10. The substrate support of claim 9, wherein the larger diameter portion is a groove in the sleeve.

11. The substrate support of claim 7, wherein the sleeve comprises: a first sleeve having a cylindrical shape; and a second sleeve having a cylindrical shape, disposed within an inner hole of the first sleeve and fixed to the first sleeve, wherein the small diameter portion is provided by the second sleeve, and the large diameter portion is provided by at least the first sleeve.

12. The substrate support according to any one of claims 7 to 11, wherein the second member is formed from polytetrafluoroethylene.

13. An electrostatic chuck comprising: a base; an electrostatic chuck provided on the base, the electrostatic chuck having a first surface including a substrate support surface and a second surface located opposite the first surface, the electrostatic chuck providing a first through hole penetrating from the first surface to the second surface; a cylindrical sleeve fixed within the base, the sleeve defining as an inner hole a second through hole aligned with the first through hole and communicating with the first through hole; a first member disposed within the first through hole; and a columnar second member supporting the first member, the second member disposed at least within the second through hole, wherein the first member and the second member form gas flow paths within the first through hole and the second through hole, the sleeve including a fixing portion partially defining an inner surface thereof, the second member including a fixed portion fixed by the fixing portion, the fixing portion including a female thread, the fixed portion includes a male screw that is screwed into the female screw.

14. The substrate support of claim 13, wherein the second member includes: a first rod having a columnar shape; and a second rod having a columnar shape and extending between the first rod and the first member, and the first rod includes the fixed portion.

15. The substrate support of claim 14, wherein the first rod is formed from a ceramic and the second rod is formed from polytetrafluoroethylene.

16. The substrate support of claim 13, wherein the first through hole is a countersunk hole, and the first member is abutted against a surface that defines the countersunk hole.

17. The substrate support of claim 16, wherein the second member is formed from a ceramic.

18. The substrate support of claim 1 or 13, wherein the first member is formed from silicon carbide or ceramic.

19. A plasma processing apparatus comprising: a plasma processing chamber providing a processing space therein; and a substrate support according to claim 1 or 13, the substrate support being disposed within the plasma processing chamber.

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